High-precision temperature detection module and high-voltage integrated circuit with same

Abstract

The invention relates to the technical field of high-voltage integrated circuits, in particular to a high-precision temperature detection module and a high-voltage integrated circuit with the high-precision temperature detection module. The current correction circuit comprises a resistor R3a, a resistor R3b, an MOS tube M3 and a triode Q3; one ends of the R3a and the R3b are connected with an operational amplifier OP of the reference current source circuit, and the other ends of the R3a and the R3b are connected with the MOS tube M3; the MOS tube M3 is respectively connected with a reference current source circuit VCC power supply and the MOS tube M2; and the Q3 is respectively connected with the other ends of the R3a and the R3b and the M3. According to the invention, constant current with zero temperature coefficient is output, so that a temperature detection result is more accurate, effective temperature protection of the HVIC can be realized, an integrated intelligent power driving chip of a high-voltage integrated circuit and an application system of the integrated intelligent power driving chip are prevented from being damaged by high temperature, and the reliability of the intelligent power driving chip HVIC is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of high-voltage integrated circuits, and in particular to a high-precision temperature detection module and a high-voltage integrated circuit having the same. Background Art

[0002] With the development of industrial level and science and technology, the speed of power electronic products is getting faster and faster, and people's requirements for performance are getting higher and higher. Among them, chip temperature detection is an important part of today's monolithic integrated intelligent power driver chip. Its accuracy directly determines the efficiency and reliability of its application system in the actual application environment to a large extent. High precision, low power consumption and easy integration have become important design goals of temperature detection modules.

[0003] The main heat sources of the high-voltage integrated intelligent driver chip HVIC, such as the high-voltage level and pulse generation circuit, will rise sharply once an abnormal situation occurs. If the on-chip temperature detection module detects inaccurately at this time, that is, the output value of the temperature detection module is greatly different from the actual value, the microcontroller receiving the temperature signal at the front end of the system will cause a series of misoperations, reducing the system efficiency, or failing to make corresponding protection responses in time, thereby further accumulating heat, damaging reliability, and ultimately causing chip failure. Therefore, the requirements for on-chip temperature detection accuracy are getting higher and higher, and it is of great significance to design a high-precision temperature detection circuit for high-voltage integrated intelligent driver chips.

[0004] like Figure 1 The figure shows the schematic diagram of the traditional reference current source circuit. The principle of the traditional reference current source circuit is: the ratio of the width to length (W / L) of the PMOS tubes M1 and M2 is 1:1, the ratio of the emitter areas of the two transistors Q1 and Q2 is 1:N, and the resistance values ​​of resistors R1 and R2 are equal. Due to the virtual short and virtual open of the operational amplifier (OP), the voltages of nodes V1 and V2 are equal. Therefore, from the voltage-current conversion relationship, it can be seen that the current flowing through Q1, Q2 and resistor R1 is a current I proportional to the temperature T. PTAT , and flows through the resistor R 2a and R 2b The current has a negative temperature coefficient. CTAT , adding the two together, we can get the current I which is almost independent of the temperature T REF However, the current flowing through the resistor R 2a and R 2b The current I CTAT It is not a completely first-order linear negative temperature coefficient current with temperature T. This is caused by the nonlinear term C(T) in the base-emitter voltage VBE of the transistor, and this nonlinear term will cause the output reference current I REFIt is not a current that is independent of temperature T. In order to make the output current of the reference current source a reference current with a zero temperature coefficient, the nonlinear term in the base-emitter voltage VBE must be eliminated. Summary of the invention

[0005] The present invention proposes a high-precision temperature detection module and a high-voltage integrated circuit equipped with the same, so as to solve the problem that the nonlinear term in the base-emitter voltage VBE of the transistor in the existing temperature detection circuit cannot be eliminated, so that the output reference current is not a reference current with a zero temperature coefficient that is independent of temperature, resulting in low temperature detection accuracy.

[0006] A high-precision temperature detection module according to the present invention comprises: a reference current source circuit, a current correction circuit and a temperature detection circuit;

[0007] The current correction circuit includes: a resistor R 3a , resistor R 3b , MOS tube M3 and transistor Q3;

[0008] The resistor R 3a and resistor R 3b One end is connected to the reference current source circuit operational amplifier OP, and the other end is connected to the MOS tube M3;

[0009] The current correction circuit MOS tube M3 is respectively connected to the reference current source circuit VCC power supply and the reference current source circuit MOS tube M2;

[0010] The current correction circuit transistor Q3 is connected to the resistor R 3a and resistor R 3b The other end and MOS tube M3;

[0011] The current correction circuit is used to eliminate the nonlinear term in the base voltage of the transistor inside the reference current source circuit, so that the reference current source circuit outputs a reference current with a zero temperature coefficient;

[0012] The temperature detection circuit is connected to the reference current source circuit, and is used to detect the temperature corresponding to the output current of the reference current source circuit.

[0013] Preferably, the reference current source circuit includes: MOS tubes M1, M2, operational amplifier OP, resistor R 2a , R 2b , R1 and transistor groups Q1, Q2;

[0014] The D pole of the MOS tube M1 and the D pole of the MOS tube M2 of the reference current source circuit are connected to the power supply VCC, and the G pole of the MOS tube M1 and the G pole of the MOS tube M2 are connected to the output end of the operational amplifier OP;

[0015] The S pole of the MOS tube M1 of the reference current source circuit, the negative input terminal of the operational amplifier OP, the resistor R 2a One end is connected to the C pole of transistor Q1;

[0016] The S pole of the MOS tube M2 of the reference current source circuit, the positive input terminal of the operational amplifier OP, the resistor R 2b One end of is connected to one end of resistor R1;

[0017] The reference current source circuit has the B pole, E pole of transistors Q1 and Q2, and resistor R 2a The other end of the resistor R 2b Connect the other end to GND.

[0018] Preferably, the resistor R 3a One end of the reference current source circuit is connected to the positive input terminal of the operational amplifier OP, and the resistor R 3b One end is connected to the negative input terminal of the reference current source circuit operational amplifier OP;

[0019] The resistor R 3a and resistor R 3b The other end is connected to the S pole of the MOS tube M3;

[0020] The D pole of the MOS tube M3 is connected to the VCC power supply of the reference current source circuit, and the G pole of the MOS tube M3 is connected to the G pole of the MOS tube M2;

[0021] The C pole of the transistor Q3 is connected to the resistor R 3a and resistor R 3b The other end and the S pole of the MOS tube M3.

[0022] Preferably, the resistor R1 and the resistor R 2a , resistor R 3a The resistance value satisfies equations (1-1) and (1-2);

[0023] KlnN / (qR1)=(Vg0-V BE(Tr) ) / (Tr*R 2a ) (1-1);

[0024] (η-1) / R 2a =1 / R 3a (1-2);

[0025] Where: K is the Boltzmann constant; N is the ratio of the emitter areas of transistors Q1 and Q2; q is the charge of the electron; Vg0 is the potential difference between the bottom of the conduction band and the top of the valence band of silicon at temperature T = 0K; V BE(Tr) is the voltage at temperature Tr; Tr is the reference temperature; η is a constant related to the process.

[0026] Preferably, the temperature detection circuit comprises: a temperature characteristic resistor;

[0027] The temperature characteristic resistor is connected to the reference current source circuit, and the temperature characteristic resistor is used to make the constant current output by the reference current source circuit generate a voltage corresponding to the temperature after passing through the temperature characteristic resistor;

[0028] According to the voltage, a corresponding temperature value is determined.

[0029] Preferably, the temperature characteristic resistor is a Poly resistor or an N-Well resistor.

[0030] Preferably, determining the corresponding temperature value according to the voltage includes:

[0031] The corresponding temperature value T is calculated using formula (2);

[0032] V R =I REF *R0(1+α TCR1 (T-Tr)) (2);

[0033] Where: V R is the voltage generated by the temperature characteristic resistor; I REF is the constant current output after passing through the reference current source circuit and the current correction circuit; R0 is the resistance value at temperature T=Tr, Tr is the reference temperature; α TCR1 is the first-order temperature coefficient of resistance.

[0034] Preferably, the resistor R 2b , the B pole and E pole of transistor Q3 are connected to GND.

[0035] According to one aspect of the present invention, there is provided a high-voltage integrated circuit with a high-precision temperature detection module, including the high-precision temperature detection circuit as described above, specifically comprising:

[0036] The high-precision temperature detection circuit is respectively connected to the level conversion circuit and the fault logic control circuit of the high-voltage integrated circuit.

[0037] Preferably, it also includes: a filter, a Schmitt circuit, a dead zone interlock circuit, a pulse circuit, a delay circuit, a bootstrap circuit, an undervoltage circuit, an ITRIP overcurrent protection circuit, a fault output circuit, an RS trigger, an output circuit and an AND gate.

[0038] The present invention has at least the following beneficial effects:

[0039] The present invention proposes a high-precision temperature detection module and a high-voltage integrated circuit equipped with the same. The nonlinear term in the reference current source circuit is eliminated by setting a correction circuit, thereby outputting a constant current with a zero temperature coefficient, making the temperature detection result more accurate, being able to achieve effective temperature protection for the HVIC, preventing the integrated intelligent power driver chip of the high-voltage integrated circuit and its application system from being damaged by high temperature, and improving the reliability of the intelligent power driver chip HVIC. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] The accompanying drawings herein are incorporated into and constitute a part of the specification. These drawings illustrate embodiments consistent with the present invention and, together with the specification, are used to explain the technical solutions of the present invention.

[0041] Figure 1 A schematic diagram of a conventional reference current source circuit in the background technology is shown;

[0042] Figure 2 A circuit schematic diagram of a high-precision temperature detection module according to an embodiment of the present invention is shown;

[0043] Figure 3 A schematic diagram of a temperature detection circuit according to an embodiment of the present invention is shown;

[0044] Figure 4 A schematic diagram of a high voltage integrated circuit according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0045] Various exemplary embodiments, features and aspects of the present invention will be described in detail below with reference to the accompanying drawings. The same reference numerals in the accompanying drawings represent elements with the same or similar functions. Although various aspects of the embodiments are shown in the accompanying drawings, the drawings are not necessarily drawn to scale unless otherwise specified.

[0046] The word “exemplary” is used exclusively herein to mean “serving as an example, example, or illustration.” Any embodiment described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other embodiments.

[0047] The term "and / or" herein is only a description of the association relationship of the associated objects, indicating that there may be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the term "at least one" herein represents any combination of at least two of any one or more of a plurality of. For example, including at least one of A, B, and C can represent including any one or more elements selected from the set consisting of A, B, and C.

[0048] In addition, in order to better illustrate the present invention, numerous specific details are provided in the following specific embodiments. It should be understood by those skilled in the art that the present invention can be implemented without certain specific details. In some examples, methods, means, components and circuits well known to those skilled in the art are not described in detail in order to highlight the subject matter of the present invention.

[0049] Figure 2 A circuit schematic diagram of a high-precision temperature detection module according to an embodiment of the present invention is shown; Figure 3 A schematic diagram of a temperature detection circuit according to an embodiment of the present invention is shown; Figure 4 FIG. 2 shows a schematic diagram of a high voltage integrated circuit according to an embodiment of the present invention. Figure 2-4 As shown, a high-precision temperature detection module includes: a reference current source circuit, a current correction circuit and a temperature detection circuit; the current correction circuit includes: a resistor R 3a , resistor R 3b , MOS tube M3 and transistor Q3; the resistor R 3a and resistor R 3b One end of the reference current source circuit operational amplifier OP is connected, and the other end is connected to the MOS tube M3; the current correction circuit MOS tube M3 is respectively connected to the reference current source circuit VCC power supply and the reference current source circuit MOS tube M2; the current correction circuit transistor Q3 is respectively connected to the resistor R 3a and resistor R 3b The other end and the MOS tube M3; the current correction circuit is used to eliminate the nonlinear term in the base voltage of the transistor inside the reference current source circuit, so that the reference current source circuit outputs a reference current with a zero temperature coefficient; the temperature detection circuit is connected to the reference current source circuit, and the temperature detection circuit is used to detect the temperature corresponding to the output current of the reference current source circuit.

[0050] In the present invention, the reference current source circuit includes: MOS tubes M1, M2, operational amplifier OP, resistor R 2a , R 2b , R1 and transistor groups Q1, Q2; the D pole of the MOS tube M1 of the reference current source circuit and the D pole of the MOS tube M2 are connected to the power supply VCC, the G pole of the MOS tube M1 and the G pole of the MOS tube M2 are connected to the output end of the operational amplifier OP; the S pole of the MOS tube M1 of the reference current source circuit, the negative input end of the operational amplifier OP, the resistor R 2a One end of the reference current source circuit MOS tube M2 is connected to the C pole of the transistor Q1; the S pole of the reference current source circuit MOS tube M2, the positive input terminal of the operational amplifier OP, the resistor R 2b The reference current source circuit has transistors Q1, Q2, and the B pole, E pole, and resistor R 2a The other end of the resistor R2b Connect the other end to GND.

[0051] In the present invention, the resistor R 3a One end of the reference current source circuit is connected to the positive input terminal of the operational amplifier OP, and the resistor R 3b One end of the resistor R is connected to the negative input end of the reference current source circuit operational amplifier OP; 3a and resistor R 3b The other end of the transistor Q3 is connected to the S pole of the MOS tube M3; the D pole of the MOS tube M3 is connected to the VCC power supply of the reference current source circuit, and the G pole of the MOS tube M3 is connected to the G pole of the MOS tube M2; the C pole of the transistor Q3 is respectively connected to the resistor R 3a and resistor R 3b The other end and the S pole of the MOS tube M3.

[0052] In the present invention, the resistor R 2b , the B pole and E pole of transistor Q3 are connected to GND.

[0053] In the embodiment of the present invention, Figure 2 As shown in FIG. 1 , the reference current source circuit is composed of a MOS tube, an operational amplifier, a resistor, and a triode, wherein the D pole of the PMOS tube M1 and the D pole of the PMOS tube M2 are connected to the power supply VCC; the G pole of the PMOS tube M1 and the G pole of the PMOS tube M2 are connected to the output end of the operational amplifier OP; the S pole of the PMOS tube M1, the negative input end of the operational amplifier OP, and the resistor R 2a One end is connected to the C pole of transistor Q1, and the connection point is denoted as V1; the S pole of PMOS tube M2, the positive input terminal of operational amplifier OP, and the resistor R 2b One end of the transistor is connected to one end of the resistor R1, and the connection point is denoted as V2. The other end of the resistor R1 is connected to the C pole of Q2. The B pole and E pole of the transistors Q1 and Q2, and the resistor R 2a The other end of the resistor R 2b The other end is connected to GND.

[0054] The current correction circuit includes a resistor R 3a and R 3b And transistor Q3; the D pole of MOS tube M1, the D pole of MOS tube M2 and the D pole of MOS tube M3 are connected together to VCC; the resistor R 3b One end is connected to the negative input terminal of the op amp OP, and the resistor R 3a One end, R 2b One end is connected to the positive input terminal of the operational amplifier OP, and the resistor R 3b The other end, R 3a The other end of the MOS tube M3 and the S pole of the transistor Q3 are connected together; the resistor R 2bThe other end of the transistor Q3 and the B pole and E pole are connected to GND; the MOS tubes M1 and M2 form a current mirror, and the MOS tubes M1 and M3 also form a current mirror; the S pole of the MOS tube M3 is connected to the C pole of the transistor Q3, and the current is not affected by VCC.

[0055] In the present invention, the resistor R1 and the resistor R 2a , resistor R 3a The resistance value satisfies equations (1-1) and (1-2);

[0056] KlnN / (qR1)=(Vg0-V BE(Tr) ) / (Tr*R 2a ) (1-1);

[0057] (η-1) / R 2a =1 / R 3a (1-2);

[0058] Where: K is the Boltzmann constant, which is 1.380×10 -23 J / K; N is the ratio of the emitter areas of transistors Q1 and Q2; q is the charge of the electron, which is 1.602×10 -19 C; Vg0 is the potential difference between the bottom of the conduction band and the top of the valence band of silicon at temperature T = 0K; V BE(Tr) is the voltage at temperature Tr; Tr is the reference temperature; η is a constant related to the process.

[0059] In the embodiment of the present invention, the sum of the current I1 having a positive temperature coefficient and the current I2 having a negative temperature coefficient is used to subtract the current flowing through the resistor R 3a , R 3b Nonlinear term I in current NL , thus obtaining a reference current with zero temperature coefficient. The specific working principle is as follows:

[0060] Due to the virtual short and virtual open of the operational amplifier OP, the voltage at point X is equal to the voltage at point Y. Combining equation (3), the positive temperature coefficient current I1 flowing through the resistor R1 can be obtained as:

[0061] I1=(V BE1 -V BE2 ) / R1=(KT / (qR1))lnN (3)

[0062] Where: K is the Boltzmann constant, which is 1.380×10 -23 J / K; q is the charge of the electron, and its value is 1.602×10 -19 C; N is the ratio of the emitter areas of the two transistors Q2 and Q1; T is the temperature; V BE2 is the voltage of Q2.

[0063] Since the resistor R 2a and R 2b The resistance value is the same, point X (R 2a , Q1, M1, op amp connection node) and Y point (op amp, R1, M2, R 2b , R 3a The voltage at the connection node is equal, then the current flows through the resistor R 2a and R 2b The current flowing through transistor Q1 is the same as the current flowing through transistor Q2. It can be seen from equation (3) that they are both P TAT Current, base-emitter voltage V of transistor Q2 BE1 for:

[0064] V BE1 =Vg0-(Vg0-V BE(Tr) )T / Tr*(η-1)V NL (4);

[0065] Where: Vg0 is the potential difference between the bottom of the conduction band and the top of the valence band of silicon at T = 0K, η is a constant related to the process, Tr is the reference temperature, T and Tr both represent thermodynamic temperature, the unit is K; V BE(Tr) is the voltage at Tr temperature; V NL is the resistance R 3b voltage.

[0066] Then the resistor R 2a The current I2 generated on is:

[0067] I2=V BE2 / R 2a =[Vg0-(Vg0-V BE(Tr) )T / Tr*(η-1)V NL ] / R 2a (5);

[0068] Because of the replication effect of the current mirror composed of MOS tubes M1 and M3, the current flowing through transistor Q3 is a current I with zero temperature coefficient. REF3 , the base-emitter voltage V of transistor Q3 BE3 for:

[0069] V BE3 =Vg0-(Vg0-V BE(Tr) )T / Tr*ηV NL (6);

[0070] Combining equations (4) and (6), we can get the current flowing through the resistor R 3a The current I NLfor:

[0071] I NL =(V BE2 -V BE3 ) / R 3a =V NL / R 3a (7);

[0072] Combining equations (3), (5) and (7), we can obtain the reference current I with zero temperature coefficient: REF for:

[0073] I REF =(KT / (qR1))lnN+[Vg0-(Vg0-V BE(Tr) )T / Tr*(η-1)V NL ] / R 2a +V NL / R 3a =Vg0 / R 2a (8);

[0074] According to formula (8), as long as equations (1-1) and (1-2) are satisfied, the setting resistors R1 and R 2a , resistor R 3a The resistance value at that time is adjusted, thereby making the reference current source circuit output a reference current with a zero temperature coefficient that is independent of temperature.

[0075] In the present invention, the temperature detection circuit includes: a temperature characteristic resistor R(T); the temperature characteristic resistor R(T) is connected to the reference current source circuit, and the temperature characteristic resistor R(T) is used to make the constant current output by the reference current source circuit generate a voltage corresponding to the temperature after passing through the temperature characteristic resistor R(T); according to the voltage, the corresponding temperature value is determined.

[0076] In the present invention, the temperature characteristic resistor R(T) is a Poly resistor or an N-Well resistor.

[0077] In the present invention, determining the corresponding temperature value according to the voltage includes: calculating the corresponding temperature value T using formula (2);

[0078] V R =I REF *R0(1+α TCR1 (T-Tr)) (2);

[0079] Where: V R is the voltage generated by the temperature characteristic resistor R(T); I REFis the constant current (reference current) output after passing through the reference current source circuit and the current correction circuit; R0 is the resistance value at temperature T=Tr, Tr is the reference temperature; α TCR1 is the first-order temperature coefficient of resistance.

[0080] In the embodiment of the present invention, Figure 3 As shown, the temperature detection circuit mainly consists of a constant current I that is independent of absolute temperature. REF And a Poly resistor with temperature characteristics. Constant current I REF Provided by the reference current source circuit and the current correction circuit, when the current I output by the reference current source circuit and the current correction circuit REF The voltage V is obtained by flowing through the temperature characteristic Poly resistor, that is, the temperature detection resistor R(T). R , V R It is the voltage corresponding to the real-time temperature when driving the high-voltage integrated circuit HVIC.

[0081] In semiconductors, integrated resistors are usually correlated with the external temperature within a certain temperature range. The temperature coefficient of resistance is generally used to represent the correlation between the resistance value and temperature. The temperature coefficient of resistance α TCR It refers to the relative change of resistance value when the temperature changes by 1°C, and the unit is ppm / °C. Usually, the correlation between resistance and temperature can be expressed as:

[0082] R(T)=R0(1+α TCR1 (T-Tr)+α TCR2 (T-Tr) 2 ) (9);

[0083] Where: R0 is the resistance value at temperature T=Tr, α TCR1 is the first-order temperature coefficient of resistance, α TCR2 is the second-order temperature coefficient of resistance, Tr represents the reference temperature, and both T and Tr represent thermodynamic temperature in K.

[0084] Among the Poly resistors with positive / negative temperature coefficients and the N-Well resistors with positive temperature coefficients, the Poly resistors are resistors made of the Poly layer used as the gate of the MOS tube, and are divided into low-resistance Poly resistors and high-resistance Poly resistors. The temperature coefficient of the Poly resistor can be positive or negative, mainly depending on the impurity ions (such as P+ or N+) injected into it, and a larger temperature coefficient can be obtained by reducing the doping concentration of impurity ions such as P+ / N+. For the high-resistance Poly resistor, it is precisely because of its lower doping concentration that the high-resistance Poly resistor usually has a larger negative temperature coefficient; while the N-Well resistor is a resistor realized by the N-Well in the P substrate process, and usually has a larger square resistance value. It is precisely because the N-Well resistor generally has a very low P+ doping concentration that it has a larger positive temperature coefficient, and like the Poly resistor, a larger positive temperature coefficient can be obtained by reducing the P+ injection concentration. The high-resistance Poly resistor has a negative temperature coefficient of -3050ppm / ℃, and the N-Well resistor has a positive temperature coefficient of 5600ppm / ℃. Therefore, in the integrated circuit process, both Poly resistors and N-Well resistors can be used as temperature sensing devices in temperature sensing circuits to detect temperature.

[0085] The present invention adopts a high-resistance Poly resistor with a negative temperature coefficient as a temperature sampling device in a temperature detection circuit to realize temperature detection.

[0086] Combining the above, we get V R =I REF *R=I REF *R0(1+α TCR1 (T-Tr)+α TCR2 (T-Tr) 2 );

[0087] Since the second-order temperature coefficient of resistance α TCR2 Very small, usually a few ppm / ℃, so compared to its first-order temperature coefficient α TCR1 , α TCR2 can be directly ignored, and the final calculation formula for the temperature T of HVIC is shown in formula (2).

[0088] The present invention also provides a high-voltage integrated circuit with a high-precision temperature detection module, including the high-precision temperature detection circuit as described above, specifically including: the high-precision temperature detection circuit is respectively connected to the level conversion circuit and the fault logic control circuit of the high-voltage integrated circuit.

[0089] The present invention also includes: a filter, a Schmitt circuit, a dead zone interlocking circuit, a pulse circuit, a delay circuit, a bootstrap circuit, an undervoltage protection circuit, an ITRIP overcurrent protection circuit, a fault output circuit, an RS trigger, an output circuit and an AND gate.

[0090] In the embodiment of the present invention, Figure 4 As shown in the figure, the high voltage integrated circuit HVIC is an integrated circuit product that converts MCU signals into driving IGBT or MOS signals. HVIC integrates PMOS tubes, NMOS tubes, triodes, diodes, voltage regulator tubes, resistors, and capacitors to form Schmitt, low voltage level, high voltage level, pulse generation circuit, delay circuit, filter circuit, overcurrent protection circuit, overheat protection circuit, undervoltage protection circuit, bootstrap circuit and other circuits.

[0091] The single pulse GEN (inductive load) circuit in the high-side drive circuit 0101 of HVIC generates pulses at the rising and falling edges of the HIN (chip high-side drive input) signal to drive the DMOS (semiconductor). The pulse width is generally several hundred nanoseconds, so that HIN corresponds to HO (chip high-side drive output). The basic high-side drive topology of HVIC is as follows: Figure 4 shown.

[0092] Among them, 0102 is an RC filter, 0103 is a Schmitt circuit, 0104 is a filter, 0105 is a level conversion circuit, 0106 is a dead zone interlock circuit, 0107 is a pulse circuit, SET and RESET are 0107 single pulse GEN output signals, 0108 is a delay circuit, 0109 is a bootstrap circuit, 0110 is an undervoltage protection circuit, 0111 is a temperature protection circuit, 0112 is an ITRIP overcurrent protection circuit, 0113 is a fault logic control circuit, 0114 is a fault output circuit, UVWQ1 and UVWQ2 are high-voltage LDMOS (RF power transistors), 0115 is an RS trigger, 0116 is an output circuit, and 0117 is an AND gate.

[0093] The driving signals are input by HIN and LIN, and pass through RC filter 0102, Schmitt circuit 0103, filter 0104, level conversion circuit 0105, dead zone interlock circuit 0106, and output HINa and LINa pulse signals; NINa signal outputs ON_PLUSE / SET and OFF_PLUSE / RESET short pulse signals through the rising and falling edges of pulse circuit 0107 respectively to drive the high-voltage LDMOS of UVWQ1 and UVWQ2; the high-voltage LDMOS is turned on and off to trigger the RS trigger 0115 to output a pulse signal, which controls the HO to output the driving pulse signal; the output LINa pulse signal passes through RC delay circuit 0108 and AND gate 0117 to control the LO to output the driving pulse signal.

[0094] The outputs of the driving signals HO and LO are protected by undervoltage protection circuit 0110, temperature protection circuit 0111, current protection ITRIP circuit 0112, and fault logic circuit 0113. The bootstrap circuit 0109 provides a bootstrap voltage to HO. The fault output circuit 0114 outputs a fault signal.

[0095] The reference current source circuit, correction circuit and temperature detection circuit are designed using CADENCE's VIRTUOSO and DRC and LVS error checking is performed using MMSIM. The reference current source circuit and temperature detection circuit are integrated into the HVIC, and the circuit function simulation of the HVIC complete circuit is performed and DRC and LVS error checking is performed using MMSIM. The reference current source circuit and temperature detection circuit layout are integrated into the HVIC layout, and the layout circuit connections are connected according to the circuit schematic diagram.

[0096] It can be understood that the above-mentioned various embodiments mentioned in the present invention can be combined with each other to form a combined embodiment without violating the principle logic. Due to space limitations, the present invention will not go into details.

[0097] The high-precision temperature detection circuit of the present invention mainly provides a constant current I by a reference source with a low temperature drift coefficient (the degree of change of the resistance value with temperature in a low temperature environment). REF , collect accurate real-time temperature through temperature detection resistor, convert it into voltage output, compare it with the temperature protection threshold of the application system, and make temperature protection for HVIC. Protect the integrated intelligent power driver chip and its application system from damage due to high temperature, thereby improving the reliability and market competitiveness of the intelligent power driver chip HVIC chip.

[0098] The embodiments of the present invention have been described above, and the above description is exemplary, not exhaustive, and is not limited to the disclosed embodiments. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The selection of terms used herein is intended to best explain the principles of the embodiments, practical applications, or technical improvements in the market, or to enable other persons of ordinary skill in the art to understand the embodiments disclosed herein.

Claims

1. A high-precision temperature detection module, characterized in that: include: A reference current source circuit, a current correction circuit and a temperature detection circuit; The current correction circuit includes: a resistor R 3a , resistor R 3b , MOS tube M3 and transistor Q3; The resistor R 3a and resistor R 3b One end is connected to the reference current source circuit operational amplifier OP, and the other end is connected to the MOS tube M3; The current correction circuit MOS tube M3 is respectively connected to the reference current source circuit VCC power supply and the reference current source circuit MOS tube M2; The current correction circuit transistor Q3 is connected to the resistor R 3a and resistor R 3b The other end and MOS tube M3; The current correction circuit is used to eliminate the nonlinear term in the base voltage of the transistor inside the reference current source circuit, so that the reference current source circuit outputs a reference current with a zero temperature coefficient; The temperature detection circuit is connected to the reference current source circuit, and is used to detect the temperature corresponding to the output current of the reference current source circuit.

2. The high-precision temperature detection module according to claim 1, characterized in that: The reference current source circuit includes: MOS tubes M1, M2, operational amplifier OP, resistor R 2a , R 2b , R1 and transistor groups Q1, Q2; The D pole of the MOS tube M1 and the D pole of the MOS tube M2 of the reference current source circuit are connected to the power supply VCC, and the G pole of the MOS tube M1 and the G pole of the MOS tube M2 are connected to the output end of the operational amplifier OP; The S pole of the MOS tube M1 of the reference current source circuit, the negative input terminal of the operational amplifier OP, the resistor R 2a One end is connected to the C pole of transistor Q1; The S pole of the MOS tube M2 of the reference current source circuit, the positive input terminal of the operational amplifier OP, the resistor R 2b One end of is connected to one end of resistor R1; The reference current source circuit has the B pole, E pole of transistors Q1 and Q2, and resistor R 2a The other end of the resistor R 2b Connect the other end to GND.

3. The high-precision temperature detection module according to claim 2, characterized in that: The resistor R 3a One end of the reference current source circuit is connected to the positive input terminal of the operational amplifier OP, and the resistor R 3b One end is connected to the negative input terminal of the reference current source circuit operational amplifier OP; The resistor R 3a and resistor R 3b The other end is connected to the S pole of the MOS tube M3; The D pole of the MOS tube M3 is connected to the VCC power supply of the reference current source circuit, and the G pole of the MOS tube M3 is connected to the G pole of the MOS tube M2; The C pole of the transistor Q3 is connected to the resistor R 3a and resistor R 3b The other end and the S pole of the MOS tube M3.

4. The high-precision temperature detection module according to claim 3, characterized in that: The resistor R1, the resistor R 2a , resistor R 3a The resistance value satisfies equations (1-1) and (1-2); KlnN / (qR1)=(Vg0-V BE(Tr) ) / (Tr*R 2a ) (1-1); (n-1) / R 2a =1 / R 3a (1-2); Where: K is the Boltzmann constant; N is the ratio of the emitter areas of transistors Q1 and Q2; q is the charge of the electron; Vg0 is the potential difference between the bottom of the conduction band and the top of the valence band of silicon at temperature T = 0K; V BE(Tr) is the voltage at temperature Tr; Tr is the reference temperature; η is a constant related to the process.

5. The high-precision temperature detection module according to claim 1, characterized in that: The temperature detection circuit comprises: a temperature characteristic resistor; The temperature characteristic resistor is connected to the reference current source circuit, and the temperature characteristic resistor is used to make the constant current output by the reference current source circuit generate a voltage corresponding to the temperature after passing through the temperature characteristic resistor; According to the voltage, a corresponding temperature value is determined.

6. The high-precision temperature detection module according to claim 5, characterized in that: The temperature characteristic resistor is a Poly resistor or an N-Well resistor.

7. The high-precision temperature detection module according to claim 6, characterized in that: Determining the corresponding temperature value according to the voltage includes: The corresponding temperature value T is calculated using formula (2); V R =I REF *R0(1+α TCR1 (T-Tr)) (2); Where: V R is the voltage generated by the temperature characteristic resistor; I REF is the constant current output after passing through the reference current source circuit and the current correction circuit; R0 is the resistance value at temperature T=Tr, Tr is the reference temperature; α TCR1 is the first-order temperature coefficient of resistance.

8. The high-precision temperature detection module according to claim 2, characterized in that: The resistor R 2b , the B pole and E pole of transistor Q3 are connected to GND.

9. A high-voltage integrated circuit with a high-precision temperature detection module, comprising the high-precision temperature detection module according to any one of claims 1 to 8, characterized in that: Specifically include: The high-precision temperature detection modules are respectively connected to the level conversion circuit and the fault logic control circuit of the high-voltage integrated circuit.

10. The high-voltage integrated circuit with a high-precision temperature detection module according to claim 9, characterized in that: Also includes: Filter, Schmitt circuit, dead zone interlock circuit, pulse circuit, delay circuit, bootstrap circuit, undervoltage circuit, ITRIP overcurrent protection circuit, fault output circuit, RS flip-flop, output circuit and AND gate.

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