Indium-iron-bismuth oxide-graphene multi-dimensional annular texture and preparation method thereof

Abstract

The invention discloses an indium-iron-bismuth oxide-graphene multi-dimensional annular texture. The indium-iron-bismuth oxide-graphene multi-dimensional annular texture is characterized in that graphene is cleaned and dried by adopting a cleaning solution, deionized water cleaning and drying method; an indium-iron-bismuth material layer containing more than 50% (wt%) of indium, more than 10% (wt%) of iron and more than 20% (wt%) of bismuth is arranged on the surface of clean graphene, the indium-iron-bismuth material layer and the graphene are integrated, and the conductivity is good; a self-assembly method of multi-dimensional annular arrangement of indium-iron-bismuth oxide or a method of multi-dimensional annular oxidation reaction on the surface of an indium-iron-bismuth material layer is adopted. Indium-iron-bismuth oxides in multi-dimensional annular arrangement are formed on the surface of the indium-iron-bismuth material layer, and the maximum length of each indium-iron-bismuth oxide is smaller than 100 nm. Each annularly arranged indium-iron-bismuth oxide and the indium-iron-bismuth material layer are integrated, the interface width of the indium-iron-bismuth oxide and the indium-iron-bismuth material layer is not less than 20% of the maximum length of the indium-iron-bismuth oxide, and the sizes of the distribution rule of the multi-dimensional annular arrangement are sequentially from small to large from top to bottom and are not less than 3 layers; and the total height of the indium-iron-bismuth oxides in multi-dimensional annular arrangement is not greater than 1000 nm.

Description

Technical Field

[0001] The invention relates to an indium iron bismuth oxide-graphene multidimensional annular texture and a preparation method thereof. Background Art

[0002] Resistive gas sensors detect gas by using the change in the resistance of materials caused by gas. They are one of the most widely used gas sensors. They can be divided into surface conductivity type and bulk conductivity type according to the reaction site. The sensing principle of surface conductivity gas sensors is that gas is adsorbed on the surface of the element, and after the reaction occurs, its surface resistance changes; the principle of bulk conductivity sensitive elements is that the gas-sensitive material reacts with gas molecules, the material undergoes a reversible change, and its conductivity changes accordingly. The resistance change of the test element can be used to obtain the gas concentration according to the proportional relationship. Resistive gas sensors can be divided into sintering type, thick film type, thin film type, silicon-based microstructure type, multilayer film type and new resistive sensor device structure according to the device structure. Thick film devices are made by mixing gas-sensitive materials with appropriate amounts of adhesives and dispersants to form a paste, and then the slurry is printed on a ceramic substrate with test electrodes and heating elements by screen printing, and then calcined at high temperature. The structure of thin film devices is similar to that of thick film devices, except that the sensitive material is not printed but formed on the substrate by evaporation, sputtering, spray pyrolysis or chemical vapor deposition. However, the manufacturing process equipment is complex and expensive, and the cost is high. As research continues to deepen, people are developing new types of gas sensors.

[0003] Ultra-small gas sensors with a height of less than 5μm have broad application prospects in the fields of micro-automation or micro-sensing.

[0004] The invention discloses an indium iron bismuth oxide-graphene multi-dimensional annular texture and a preparation method thereof, and is used to develop an ultra-small gas sensor with a height less than 3 μm.

[0005] According to the results of literature and patent searches, there are currently no relevant patent literature reports in China regarding multi-dimensional ring-arranged indium iron bismuth oxide with a height of less than 3 μm - a composite material layer containing more than 50% (wt%) indium, more than 10% (wt%) iron, and more than 20% (wt%) bismuth - graphene. Summary of the invention

[0006] The task of the present invention is to provide an indium iron bismuth oxide-graphene multidimensional annular texture, and the task of the present invention is achieved through the following technical scheme: the graphene is cleaned and dried by a "washing liquid + deionized water washing + drying" method; an indium iron bismuth material layer containing more than 50% (wt%) indium, more than 10% (wt%) iron and more than 20% (wt%) bismuth is provided on the clean graphene surface, the indium iron bismuth material layer is integrated with the graphene and has good conductivity; a multidimensional annular arrangement of indium iron bismuth oxide is performed by a self-assembly method or a multidimensional annular oxidation reaction occurs on the surface of the indium iron bismuth material layer, a multidimensional annular arrangement of indium iron bismuth oxide is formed on the surface of the indium iron bismuth material layer, the maximum length of each indium iron bismuth oxide is less than 100nm, each annular arrangement of indium iron bismuth oxide is integrated with the indium iron bismuth material layer, and the interface width of the indium iron bismuth oxide and the indium iron bismuth material layer is not less than 20% of the maximum length of the indium iron bismuth oxide. The distribution pattern of the multi-dimensional ring arrangement is from small to large from top to bottom and is not less than 3 layers. The total height of the multi-dimensional ring-arranged indium iron bismuth oxide is no more than 1000 nm, forming an indium iron bismuth-graphene multi-dimensional ring texture.

[0007] In the indium iron bismuth oxide-graphene multidimensional annular texture, each annularly arranged indium iron bismuth oxide is integrated with the indium iron bismuth material layer, and the interface width of the indium iron bismuth oxide and the indium iron bismuth material layer is not less than 20% of the maximum length of the indium iron bismuth oxide.

[0008] The indium iron bismuth oxide-graphene multidimensional annular texture forms a multidimensional annular arrangement of indium iron bismuth oxide on the surface of the indium iron bismuth material layer. The distribution pattern of the multidimensional annular arrangement is from small to large from top to bottom and is not less than 3 layers. The total height of the multidimensional annular arrangement of indium iron bismuth oxide is not more than 1000 nm.

[0009] The shape and size of the indium iron bismuth oxide may vary.

[0010] After years of in-depth research, the inventors found that the appropriate addition of bismuth and iron has a special effect, which can promote the formation of multi-dimensional ring-shaped, petal-shaped structures of indium iron bismuth oxide. The multi-dimensional ring-shaped indium iron bismuth oxide structure and large specific surface area characteristics can effectively promote the transmission and diffusion of gas molecules, and provide more reactive sites for chemical interactions between gas molecules and the surface of the material, thereby improving the sensitivity of indium iron bismuth oxide to gas molecules and significantly enhancing its gas-sensitive response. Therefore, the study of indium iron bismuth oxide-graphene multi-dimensional ring texture has important application value and practical significance for promoting the development of flexible gas sensor technology.

[0011] Compared with the prior art, the related technologies of the indium iron bismuth oxide-graphene multidimensional annular texture of the present invention have significant improvements: (1) A graphene / hydrogenated indium oxide composite photocatalyst and its preparation method, CN202110093326.3, provides a graphene / hydrogenated indium oxide composite photocatalyst and its preparation method, which are significantly different from the composition and structure of the present invention, and the present invention does not involve hydrogenated indium oxide. (2) An indium selenide / nitrogen-doped reduced graphene oxide composite material and its preparation method and application, CN202010829785.9, provides an indium selenide / nitrogen-doped reduced graphene oxide composite material and its preparation method and application, the composite material includes reduced graphene oxide, and the surface of the reduced graphene oxide is loaded with indium selenide nanodots; the composite material is doped with nitrogen. The composition and structure are significantly different from the present invention. (3) An indium zinc sulfide-nitrogen doped graphene foam composite photocatalytic material and its preparation method and application, CN201911311852.1, the composite photocatalytic material comprises a three-dimensional nitrogen-doped graphene foam and a two-dimensional indium zinc sulfide nanosheet arranged vertically on the surface of the nitrogen-doped graphene foam. The preparation method is as follows: after the polyurethane sponge is hydrophilically treated, it is immersed in a graphene oxide suspension, dried and calcined, and ion-cleaned to obtain a three-dimensional nitrogen-doped graphene foam; then it is mixed with an inorganic zinc salt, an inorganic indium salt and a sulfur-containing organic matter, and then subjected to a hydrothermal reaction, and then post-treated to obtain an indium zinc sulfide-nitrogen doped graphene foam composite photocatalytic material. The composition and structure of the present invention are significantly different. (4) An indium zinc sulfide-nitrogen doped graphene foam composite photocatalytic material and its preparation method and application, CN201911311852.1, relates to an indium zinc sulfide-nitrogen doped graphene foam composite photocatalytic material and its preparation method and application. The composition and structure of the present invention are significantly different. (5) Preparation of an indium sulfide nanosheet array / three-dimensional foam graphene supercapacitor electrode, CN201910633823.0, discloses the preparation of an indium sulfide nanosheet array / three-dimensional foam graphene supercapacitor electrode. The composition and structure are significantly different from those of the present invention. (6) An indium-based MOFs / graphene oxide composite material and its preparation method and application, CN201811092761.9, belongs to the technical field of metal organic framework materials, discloses an indium-based MOFs / graphene oxide composite material and its preparation method and application, which are significantly different from the composition and structure of the present invention. The present invention does not contain organic framework materials. (7) An indium sulfide / graphene composite film and its preparation method and application, CN201811524841.7, discloses an indium sulfide (In2S3) / graphene composite film and its preparation method and application, which are significantly different from the composition and structure of the present invention.(8) An indium tin oxide / vertical graphene photodetector composite structure and its preparation method, CN201910372272.7, characterized in that its structure from bottom to top is: glass as the substrate of the device; vertical graphene on the substrate as the light absorption layer and electron transport layer of the device; indium tin oxide film on the vertical graphene as the transparent current auxiliary diffusion layer; titanium / gold electrodes on both sides of the vertical graphene are connected to the external power supply, which is significantly different from the composition and structure of the present invention. (9) Preparation method of graphene-like structure copper indium sulfur nanosheet array film, CN201410098261.1, discloses a preparation method of graphene-like structure copper indium sulfur nanosheet array film in the field of nanomaterial preparation technology, the copper source used is monovalent copper salt, the indium source is indium chloride, the sulfur source is sulfur powder and thiourea, and the regular nanofilm is prepared by in-situ solvent thermal method. It is significantly different from the composition and structure of the present invention. (10) The paper "Study on Nitrogen Dioxide Gas Sensor Based on Reduced Graphene Oxide-Indium Oxide Composite Materials" prepared two different hierarchical structure In2O3 and graphene composite materials and graphene aerogel-supported In2O3 composite materials, respectively, and improved the sensing performance through the synergistic effect of the composite materials, realizing the development of high-performance, low-power NO2 sensors; the composition and structure are significantly different from those of the present invention. (11) The paper "Microwave-assisted carbon-induced preparation and performance regulation of metal oxide gas-sensitive materials" uses a normal pressure microwave-assisted method to uniformly load metal oxides on carbon nanomaterials, induce the preparation of metal oxides or metal oxide structured materials, and study the sensitive properties of metal oxide gas-sensitive materials; the composition and structure are significantly different from those of the present invention. (12) The paper "Preparation and anti-bovine serum albumin performance of graphene oxide / indium oxide / zwitterionic acrylic fluorinated polymer composite film", using GO / In2O3 composite material as filler and PAZFP resin emulsion as matrix, prepared a new organic / inorganic composite coating with micro / nano surface structure and low surface energy - graphene oxide / indium oxide / zwitterionic acrylic fluorinated polymer (GO / In2O3 / PAZFP) composite film, and studied its anti-protein performance; it is significantly different from the composition and structure of the present invention. (13) The paper "Research and Regulation of Optical Properties of InSe / Graphene Heterojunction", prepared a heterostructure of graphene and InSe by dry transfer, and then regulated the interaction between the two by staged annealing treatment; it is significantly different from the composition and structure of the present invention. (14) The paper “Identification of the number of graphene and indium selenide layers by optical contrast” uses a multi-beam parallel plate interference model to calculate the theoretical reflectivity contrast values ​​of samples with 1 to 4 layers on a single-polished silicon wafer; and uses a mechanical peeling method to prepare samples with 1 to 4 layers; the composition and structure are significantly different from those of the present invention.

[0012] The beneficial effects of the present invention are that it has high sensitivity to specific gas molecules, significantly enhances its gas-sensitive response sensitivity, is easy to use, has a simple structure, a height of less than 3 μm, strong applicability, and an appropriate application cost, and is suitable for mass production. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a schematic diagram of the structure of the indium iron bismuth oxide-graphene multi-dimensional ring texture sample of Example 1 of the present invention.

[0014] Figure 2 This is a scanning electron microscope photograph of the indium iron bismuth oxide-graphene multi-dimensional ring texture sample of Example 1 of the present invention.

[0015] Figure 3 This is a schematic structural diagram of the indium iron bismuth oxide-graphene multidimensional annular texture and preparation method of Example 2 of the present invention.

[0016] Figure 4 This is a schematic structural diagram of the indium iron bismuth oxide-graphene multidimensional annular texture and preparation method of Example 3 of the present invention.

[0017] In the attached drawings, 1-graphene, 2-indium iron bismuth material layer, 3-gas source, 4-air pipe, 5-rotating blade with drive motor and accessories, 6-bearing, 7-composite material layer, 8-box, 9-support frame, 10-pneumatic triplex, 11-regulating valve. DETAILED DESCRIPTION

[0018] The present invention will be further described below in conjunction with the accompanying drawings. Example

[0019] Figure 1 This is a schematic diagram of the structure of the indium iron bismuth oxide-graphene multi-dimensional ring texture sample of Example 1 of the present invention, Figure 2 This is a scanning electron microscope photo of the indium iron bismuth oxide-graphene multi-dimensional ring texture sample of Example 1 of the present invention. In the figure, 1 is graphene, and 2 is the indium iron bismuth material layer.

[0020] The indium iron bismuth oxide-graphene multidimensional annular texture and preparation method of the present invention are characterized in that: the graphene is cleaned and dried by a "washing liquid + deionized water washing + drying" method; an indium iron bismuth material layer containing more than 50% (wt%) indium, more than 10% (wt%) iron and more than 20% (wt%) bismuth is provided on the clean graphene surface, the indium iron bismuth material layer is integrated with the graphene and has good conductivity; a multidimensional annularly arranged indium iron bismuth oxide self-assembly method or a multidimensional annular oxidation reaction method on the surface of the indium iron bismuth material layer is used to form multidimensional annularly arranged indium iron bismuth oxide on the surface of the indium iron bismuth material layer, the maximum length of each indium iron bismuth oxide is less than 100nm, each annularly arranged indium iron bismuth oxide is integrated with the indium iron bismuth material layer, and the interface width of the indium iron bismuth oxide and the indium iron bismuth material layer is not less than 20% of the maximum length of the indium iron bismuth oxide. The distribution pattern of the multi-dimensional ring arrangement is from small to large from top to bottom and is not less than 3 layers. The total height of the multi-dimensional ring-arranged indium iron bismuth oxide is not greater than 1000 nm, such as Figure 2 As shown, a multi-dimensional ring texture of indium iron bismuth-graphene is formed. Example

[0021] Figure 1 This is a schematic diagram of the structure of the indium iron bismuth oxide-graphene multi-dimensional ring texture sample of Example 1 of the present invention, Figure 2 This is a scanning electron microscope photograph of the indium iron bismuth oxide-graphene multi-dimensional ring texture sample of Example 1 of the present invention. Figure 3 The structure schematic diagram of the multi-dimensional annular texture of indium iron bismuth oxide-graphene and the preparation method of Example 2 of the present invention. In the figure, 1 is graphene, 2 is an indium iron bismuth material layer, 3 is an air source, 4 is an air pipe, 5 is a rotating blade with a drive motor and accessories, 6 is a bearing, 7 is a composite material layer, 8 is a box, and 9 is a support frame.

[0022] The indium iron bismuth oxide-graphene multidimensional annular texture and preparation method of the present invention are characterized in that: the graphene is cleaned and dried by a "washing liquid + deionized water washing + drying" method; an indium iron bismuth material layer containing more than 50% (wt%) indium, more than 10% (wt%) iron and more than 20% (wt%) bismuth is provided on the clean graphene surface to form a composite material layer, the indium iron bismuth material layer and the graphene are integrated and have good electrical conductivity; the composite material layer is placed on the clean concave support frame surface; the gas source 3 fills the box 8 with pure oxygen through the gas pipe 4; after 5 minutes, the rotating blade with a driving motor and accessories is started, and the rotating blade is fixedly installed in the box through its shaft and bearing 6 8, the number of rotating blades is not less than 2, the structure of the blades is optimized and customized, and is in the shape of an ω-shaped arc transition with a sharp protrusion in the middle, the rotation speed of the rotating blades is adjusted to drive the gas in the box to move superimposed, so as to realize the formation of micro-area annular flow of gas on the surface of the composite material layer, and the surface of the composite material layer is irradiated with a laser beam, and the irradiation time is less than 0.5 seconds, and a multi-dimensional annular arrangement of indium iron bismuth oxides is formed on the surface of the indium iron bismuth material layer, the maximum length of each indium iron bismuth oxide is less than 100nm, each annular arrangement of indium iron bismuth oxide and the indium iron bismuth material layer are integrated and the interface width of the indium iron bismuth oxide and the indium iron bismuth material layer is not less than 20% of the maximum length of the indium iron bismuth oxide, the distribution pattern of the multi-dimensional annular arrangement is from small to large from top to bottom and is not less than 3 layers, and the total height of the multi-dimensional annular arrangement of indium iron bismuth oxide is not more than 1000nm, such as Figure 2 As shown, a multi-dimensional ring texture of indium iron bismuth-graphene is formed. Example

[0023] Figure 1 This is a schematic diagram of the structure of the indium iron bismuth oxide-graphene multi-dimensional ring texture sample of Example 1 of the present invention, Figure 2 This is a scanning electron microscope photograph of the indium iron bismuth oxide-graphene multi-dimensional ring texture sample of Example 1 of the present invention. Figure 4 The structure schematic diagram of the multi-dimensional annular texture of indium iron bismuth oxide-graphene and the preparation method of Example 3 of the present invention. In the figure, 1 is graphene, 2 is an indium iron bismuth material layer, 3 is an air source, 4 is an air pipe, 5 is a rotating blade with a drive motor and accessories, 6 is a bearing, 7 is a composite material layer, 8 is a box, 9 is a support frame, 10 is a pneumatic triplet, and 11 is a regulating valve.

[0024] The difference between the present embodiment 3 and the embodiment 2 is that the gas source is changed to air, the air is filtered and dehumidified by the pneumatic triplex, and the regulating valve can adjust the flow rate of the air.

[0025] The indium iron bismuth oxide-graphene multidimensional annular texture and preparation method of the present invention are characterized in that: the graphene is cleaned and dried by a "washing liquid + deionized water washing + drying" method; an indium iron bismuth material layer containing more than 50% (wt%) indium, more than 10% (wt%) iron and more than 20% (wt%) bismuth is provided on the clean graphene surface to form a composite material layer, the indium iron bismuth material layer and the graphene are integrated and have good electrical conductivity; the composite material layer is placed on the clean concave support frame surface; the air source 3 is air, which is filtered and dehumidified by a pneumatic triplet and filled into a box 8 through an air pipe 4, and a regulating valve can adjust the flow of air; after 5 minutes, a rotating blade with a driving motor and accessories is started, the shaft of the rotating blade is fixedly installed on the box 8 through a bearing 6, the number of the rotating blades is not less than 2, and the structure of the blade is optimized and customized, and is in the shape of an arc with a pointed protrusion in the middle. The invention discloses a method for preparing a transitional ω-shape, adjusting the rotation speed of the rotating blades to drive the gas in the box to move in a superimposed manner, realizing the formation of a micro-area annular flow of the gas on the surface of the composite material layer, irradiating the surface of the composite material layer with a laser beam, and the irradiation time is less than 0.5 seconds, forming a multi-dimensional annularly arranged indium iron bismuth oxide on the surface of the indium iron bismuth material layer, the maximum length of each indium iron bismuth oxide is less than 100nm, each annularly arranged indium iron bismuth oxide is integrated with the indium iron bismuth material layer, and the interface width of the indium iron bismuth oxide and the indium iron bismuth material layer is not less than 20% of the maximum length of the indium iron bismuth oxide, the distribution law of the multi-dimensional annular arrangement is from small to large from top to bottom and is not less than 3 layers, the total height of the multi-dimensional annularly arranged indium iron bismuth oxide is not more than 1000 nm, and an indium iron bismuth-graphene multi-dimensional annular texture is formed.

[0026] The indium iron bismuth oxide-graphene multidimensional annular texture is characterized in that the shape and size of the indium iron bismuth oxide can be changed.

Claims

1. Indium iron bismuth oxide-graphene multidimensional annular texture and preparation method, characterized in that: The graphene is cleaned and dried by a "washing liquid + deionized water washing + drying" method; an indium iron bismuth material layer containing more than 50% (wt%) indium, more than 10% (wt%) iron and more than 20% (wt%) bismuth is provided on the clean graphene surface, the indium iron bismuth material layer is integrated with the graphene and has good conductive properties; a multi-dimensional annular arrangement of indium iron bismuth oxide is performed by a self-assembly method or a multi-dimensional annular oxidation reaction method occurs on the surface of the indium iron bismuth material layer, a multi-dimensional annular arrangement of indium iron bismuth oxide is formed on the surface of the indium iron bismuth material layer, the maximum length of each indium iron bismuth oxide is less than 100nm, each annular arrangement of indium iron bismuth oxide is integrated with the indium iron bismuth material layer, and the interface width of the indium iron bismuth oxide and the indium iron bismuth material layer is not less than 20% of the maximum length of the indium iron bismuth oxide, the distribution pattern of the multi-dimensional annular arrangement is from small to large from top to bottom and is not less than 3 layers, and the total height of the multi-dimensional annular arrangement of indium iron bismuth oxide is not more than 1000nm. nm, forming an indium iron bismuth-graphene multidimensional annular texture; characterized in that: a multidimensional annular arrangement of indium iron bismuth oxide is formed on the surface of the indium iron bismuth material layer by a self-assembly method of multidimensional annular arrangement of indium iron bismuth oxide or a multidimensional annular oxidation reaction occurs on the surface of the indium iron bismuth material layer, the distribution pattern of the multidimensional annular arrangement is from small to large from top to bottom and is not less than 3 layers, and the total height of the multidimensional annular arrangement of indium iron bismuth oxide is not greater than 1000 nm; each annular arrangement of indium iron bismuth oxide is integrated with the indium iron bismuth material layer and the interface width of the indium iron bismuth oxide and the indium iron bismuth material layer is not less than 20% of the maximum length of the indium iron bismuth oxide.

2. Indium iron bismuth oxide-graphene multidimensional annular texture and preparation method, characterized in that: The graphene is cleaned and dried by the method of "washing liquid + deionized water cleaning + drying"; an indium iron bismuth material layer containing more than 50% (wt%) indium, more than 10% (wt%) iron and more than 20% (wt%) bismuth is provided on the clean graphene surface to form a composite material layer, the indium iron bismuth material layer and the graphene are integrated and have good electrical conductivity; the composite material layer is placed on the clean concave support frame surface; the air source fills the box with pure oxygen through the air pipe; after 5 minutes, the rotating blade with a drive motor and accessories is started, and the rotating blade is fixedly installed on the box through its shaft and bearing, and the number of the rotating blades is not less than 2, and the blade The structure of the sheet is optimized and customized, and is in the shape of an ω-shaped arc transition with a sharp protrusion in the middle. The rotation speed of the rotating blade is adjusted to drive the gas movement in the box to superimpose, so that the gas forms a micro-area annular flow on the surface of the composite material layer. The surface of the composite material layer is irradiated with a laser beam, and the irradiation time is less than 0.5 seconds. Multi-dimensional annularly arranged indium iron bismuth oxides are formed on the surface of the indium iron bismuth material layer, and the maximum length of each indium iron bismuth oxide is less than 100nm. Each annularly arranged indium iron bismuth oxide is integrated with the indium iron bismuth material layer, and the interface width of the indium iron bismuth oxide and the indium iron bismuth material layer is not less than 20% of the maximum length of the indium iron bismuth oxide. The distribution pattern of the multi-dimensional annular arrangement is from small to large from top to bottom and is not less than 3 layers. The total height of the multi-dimensional annularly arranged indium iron bismuth oxide is not more than 1000 nm, forming an indium iron bismuth-graphene multi-dimensional annular texture.

3. Indium iron bismuth oxide-graphene multidimensional ring texture and preparation method. Characterized by: The graphene is cleaned and dried by a "washing liquid + deionized water washing + drying" method; an indium iron bismuth material layer containing more than 50% (wt%) indium, more than 10% (wt%) iron and more than 20% (wt%) bismuth is provided on the clean graphene surface to form a composite material layer, the indium iron bismuth material layer and the graphene are integrated and have good electrical conductivity; the composite material layer is placed on a clean concave support frame surface; the air source is air, which is filtered and dehumidified by a pneumatic triplet and filled into the box through an air pipe, and a regulating valve can adjust the air flow; After 5 minutes, a rotating blade with a driving motor and accessories is started, the shaft of the rotating blade is fixedly installed on the box through a bearing, the number of the rotating blades is not less than 2, the structure of the blade is optimized and customized, and is in an ω-shape with a sharp arc transition in the middle, the rotation speed of the rotating blade is adjusted to drive the gas in the box to move superimposed, and the gas forms a micro-area annular flow on the surface of the composite material layer, and the surface of the composite material layer is irradiated with a laser beam, the irradiation time is less than 0.5 seconds, and multi-dimensional annularly arranged indium iron bismuth oxides are formed on the surface of the indium iron bismuth material layer, the maximum length of each indium iron bismuth oxide is less than 100nm, each annularly arranged indium iron bismuth oxide is integrated with the indium iron bismuth material layer, and the interface width of the indium iron bismuth oxide and the indium iron bismuth material layer is not less than 20% of the maximum length of the indium iron bismuth oxide, the distribution pattern of the multi-dimensional annular arrangement is from small to large from top to bottom and is not less than 3 layers, and the total height of the multi-dimensional annularly arranged indium iron bismuth oxide is not more than 1000nm, forming an indium iron bismuth-graphene multi-dimensional annular texture.

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