A method for processing material used for resistor and resistor

Abstract

The present disclosure provides a method for processing a material for a resistor and a resistor, wherein the resistor comprises at least a preset substrate and a preset resistor layer located on the preset substrate, and the processing method comprises: obtaining a temperature coefficient of resistance TCR of the preset resistor layer in a free state f ; Obtain the resistance temperature coefficient change value TCRs generated by the preset substrate and the preset resistor layer due to thermal stress; Based on the resistance temperature coefficient TCR f And the resistance temperature coefficient change value TCR s Get the results TCR r Based on the results TCR r Determine the processing conditions for the target material.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor manufacturing, and in particular to a method for processing materials used for resistors and a resistor. Background Art

[0002] The temperature coefficient is one of the most important indicators of fixed resistors. At present, the temperature coefficient of fixed resistors produced domestically can be above ±2ppm / ℃. Due to the limitations of the material performance itself, the temperature coefficient of resistors currently produced normally greatly exceeds the required value of the temperature coefficient of precision resistors, resulting in a decrease in the total output of very precision resistors.

[0003] Therefore, there are still many problems to be improved in terms of how to obtain a resistor structure with a lower temperature coefficient and a very stable resistance value under a wide range of temperature changes. Summary of the invention

[0004] The present disclosure provides a method for processing a material for a resistor, wherein the resistor comprises at least a preset substrate and a preset resistor layer located on the preset substrate, and the method comprises:

[0005] Obtaining the temperature coefficient of resistance TCR of the preset resistance layer in a free state f ;

[0006] Obtaining a resistance temperature coefficient change value TCR generated by the preset substrate and the preset resistor layer due to thermal stress s ;

[0007] Based on the temperature coefficient of resistance TCR f And the resistance temperature coefficient change value TCR s Get the results TCR r ;

[0008] Based on the results TCR r Determine the processing conditions for the target material.

[0009] In some embodiments, a resistance temperature coefficient change value TCR generated by the predetermined substrate and the predetermined resistance layer due to thermal stress is obtained. s ;include:

[0010] Obtain the thermal expansion coefficient α of the preset substrate c ;

[0011] Obtain the thermal expansion coefficient related value α of the preset resistance layer m ;

[0012] The α c And the α mSubstituting into the following relationship (1), the resistance temperature coefficient change value TCR is calculated s :

[0013] TCR S =-k(α m -α c ) (1);

[0014] Where k is the gauge factor.

[0015] In some embodiments, based on the temperature coefficient of resistance TCR f And the resistance temperature coefficient change value TCR s Get the results TCR r ,include:

[0016] The TCR f and the TCR s Substituting into the following relationship (2), the result TCR is calculated r :

[0017] TCR r = TCR f –k(α m -α c ) = TCR f +kα c - kα m (2).

[0018] In some embodiments, the target material includes a target resistance layer, and based on the result TCR r Determining the processing conditions includes:

[0019] The TCR r Comparing the resistance temperature coefficient with the reference resistance layer after being processed in a preset manner to obtain a comparison result;

[0020] The processing parameters of the target resistance layer are determined based on the comparison result and the processing parameters of the reference resistance layer in a preset processing mode.

[0021] In some embodiments, the target material is a target resistance layer, and after obtaining the processing conditions, the processing method further includes:

[0022] performing a heat treatment process on the target resistance layer;

[0023] And / or, the temperature range of the heat treatment process is between 300°C and 500°C.

[0024] In some embodiments, the target material comprises a substrate, and based on the result TCR rDetermining processing conditions for the target material, including:

[0025] Based on the results TCR r Target parameters for the substrate are determined.

[0026] In some embodiments, the target material includes an adhesive layer, based on the result TCR r Determining processing conditions for the target material, including:

[0027] Based on the results TCR r determining target parameters of the bonding layer;

[0028] And / or, the target parameter at least includes a bonding force between the adhesive layer and the target resistance layer.

[0029] The present disclosure also provides a resistor, the resistor comprising:

[0030] A target material, the target material comprises at least a substrate and a target resistance layer located on the substrate; wherein the target material is obtained by using the processing method described in any of the above embodiments.

[0031] In some embodiments, the material of the substrate includes at least one of sapphire, zirconium oxide, microcrystalline glass, silicon nitride, aluminum nitride, or a combination thereof.

[0032] In some embodiments, the target material further includes an adhesive layer, wherein the adhesive layer is located between the substrate and the target resistance layer.

[0033] The present disclosure provides a material processing method for a resistor and a resistor structure, wherein the resistor comprises at least a preset substrate and a preset resistor layer located on the preset substrate, and the processing method comprises: obtaining a resistance temperature coefficient TCR of the preset resistor layer in a free state f ; Obtain the resistance temperature coefficient change value TCR generated by the preset substrate and the preset resistor layer due to thermal stress s ; Based on the temperature coefficient of resistance TCR f And the resistance temperature coefficient change value TCR s Get the results TCR r Based on the results TCR r Determine the processing conditions of the target material. In this way, the temperature coefficient of resistance TCR of the preset resistor layer in the free state is known. f and the change value TCR of the resistance temperature coefficient of the resistor caused by the tensile or contraction stress between the preset substrate and the preset resistor layer disposed on the preset substrate under the action of thermal stress. s Afterwards, the obtained TCR fand TCR s The result TCR can be obtained by calculating the value r , based on the results TCR r The properties of the target material (such as absolute value and positive and negative, etc.) can be used to determine the processing conditions of the target material. When the target material treated with the processing conditions is used in the resistor structure, it can play a certain role in compensating the resistance temperature coefficient of the newly obtained resistor, reducing the TCR of the newly obtained resistor. r The magnitude of the deviation from the zero value, that is, a resistor structure with a lower temperature coefficient of resistance can be obtained.

[0034] The details of one or more embodiments of the present disclosure are set forth in the accompanying drawings and the description below. Other features and advantages of the present disclosure will become apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0036] Figure 1 A flowchart of a method for processing a material for a low temperature coefficient resistor provided by an embodiment of the present disclosure;

[0037] Figure 2 A schematic diagram of a structure of a preset resistor structure provided in an embodiment of the present disclosure;

[0038] Figure 3 It is a schematic diagram of the curve of the temperature coefficient of resistance in the resistor changing with the temperature;

[0039] Figures 4 to 6 A schematic diagram of the structure of a resistor provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0040] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the specific embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0041] In the following description, a large number of specific details are given to provide a more thorough understanding of the present disclosure. However, it is obvious to those skilled in the art that the present disclosure can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present disclosure, some technical features known in the art are not described; that is, all features of actual embodiments are not described here, and well-known functions and structures are not described in detail.

[0042] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0043] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer or part discussed below can be represented as the second element, component, region, layer or part. And when the second element, component, region, layer or part is discussed, it does not indicate that the present disclosure necessarily has the first element, component, region, layer or part.

[0044] Spatially relative terms such as "under", "beneath", "below", "under", "above", "above", etc., may be used here for convenience of description to describe the relationship between an element or feature shown in the figure and other elements or features. It should be understood that in addition to the orientation shown in the figure, the spatial relationship terms are intended to also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is turned over, then the elements or features described as "under other elements" or "under it" or "under it" will be oriented as "on" other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. The device can be oriented otherwise (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0045] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be a limitation of the present disclosure. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0046] The temperature coefficient of a resistor refers to the degree to which the resistance changes with temperature. Generally, the resistance of metals increases with increasing temperature, while the resistance of non-metals decreases with increasing temperature. If the temperature coefficient of a resistor is too large, the stability of the circuit will be affected, which may lead to the risk of circuit performance degradation or failure.

[0047] However, due to various restrictions, existing resistors still have a relatively high temperature coefficient of resistance.

[0048] Based on this, the following technical solutions of the embodiments of the present disclosure are proposed:

[0049] The present disclosure provides a method for processing a material for a resistor, wherein the resistor comprises at least a preset substrate and a preset resistor layer located on the preset substrate, such as Figure 1 As shown, the processing method includes the following steps:

[0050] Step S101: Obtaining the temperature coefficient of resistance TCR of the preset resistance layer in a free state f ;

[0051] Step S102: Obtaining a resistance temperature coefficient change value TCR generated by the preset substrate and the preset resistor layer due to thermal stress s ;

[0052] Step S103: Based on the temperature coefficient of resistance TCR f And the resistance temperature coefficient change value TCR s Get the results TCR r ;

[0053] Step S104: Based on the result TCR r Determine the processing conditions for the target material.

[0054] Thus, the temperature coefficient of resistance TCR of the preset resistor layer in the free state is known. f and the change value TCR of the resistance temperature coefficient of the resistor caused by the tensile or contraction stress between the preset substrate and the preset resistor layer disposed on the preset substrate under the action of thermal stress.s Afterwards, the obtained TCR f and TCR s The result TCR can be obtained by calculating the value r , based on the results TCR r The properties of the target material (such as absolute value and positive and negative, etc.) can be used to determine the processing conditions of the target material. When the target material treated with the processing conditions is used in the resistor structure, it can play a certain role in compensating the resistance temperature coefficient of the newly obtained resistor, reducing the TCR of the newly obtained resistor. r The magnitude of the deviation from the zero value, that is, a resistor structure with a lower temperature coefficient of resistance can be obtained.

[0055] In order to make the above-mentioned purposes, features and advantages of the present disclosure more obvious and easy to understand, the specific implementation methods of the present disclosure are described in detail below in conjunction with the accompanying drawings. When describing the embodiments of the present disclosure in detail, for the convenience of explanation, the schematic diagram will not be partially enlarged according to the general proportion, and the schematic diagram is only an example, which should not limit the scope of protection of the present disclosure.

[0056] Figure 2 A schematic diagram of a structure of a preset resistor structure provided in an embodiment of the present disclosure; Figure 3 It is a schematic diagram of the curve of the temperature coefficient of resistance in the resistor changing with the temperature; Figures 4 to 6 A schematic diagram of the structure of a resistor provided in an embodiment of the present disclosure.

[0057] The material processing method for resistors provided by the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0058] like Figure 2 The preset resistors shown include:

[0059] A preset substrate 10 and a preset resistance layer 12 located on the preset substrate 10 .

[0060] In some embodiments, the material of the preset substrate 10 may include but is not limited to one or more of a ceramic substrate, a silicon substrate, a glass substrate, and an organic polymer substrate. Some parameters of the preset substrate 10, such as the thermal expansion coefficient, may have a certain influence on the resistance temperature coefficient of the preset resistor.

[0061] In some embodiments, the material of the preset resistance layer 12 can be at least one of nickel-chromium, Ivan alloy, Kama alloy, hexavalent alloy, etc., or a combination thereof.

[0062] In some embodiments, the preset resistor may further include a preset adhesive layer 11 , and the preset adhesive layer 11 is located between the preset substrate 10 and the preset resistor layer 12 to fix the preset resistor layer 12 on the preset substrate.

[0063] In some embodiments, the material of the preset adhesive layer 11 may include epoxy resin, polyimide adhesive or adhesive film, silicone adhesive, etc.

[0064] It can be understood that when the alloy foil material included in the preset resistance layer 12 is bounded on the preset substrate 10 by the preset adhesive layer 11, when subjected to thermal stress, the actual expansion and contraction amount of the alloy foil included in the preset resistance layer 12 will have a great relationship with the expansion and contraction of the preset substrate 10. For example, when the temperature rises, the preset substrate is subjected to the tensile force F1, but due to the properties of the material, the elongated dimension is small, and the actual elongated dimension of the alloy foil included in the preset resistance layer 12 is compared with the case where it is not bound on the preset substrate 10. In fact, it can only be extended to a smaller dimension. That is to say, in this process, the alloy foil material is subject to the restriction from the preset substrate 10, that is, the alloy foil is subjected to the tensile stress F2 caused by the temperature rise, and is also subjected to the compressive stress F3 generated when the preset adhesive layer 11 binds it to the preset substrate 10. The combined effect of these forces causes the alloy foil to actually only be able to be extended to a smaller dimension.

[0065] When the temperature is lowered, the preset substrate is subjected to a contraction force F4, but due to the properties of the material, the size of its contraction is small, and the alloy foil contained in the preset resistance layer 12 is actually stretched to a smaller size than when it is not bound to the preset substrate 10. In other words, in this process, the alloy foil material is restricted by the preset substrate 10, that is, the alloy foil is subjected to the contraction stress F5 caused by the temperature reduction, and is also subjected to the tensile stress F6 generated when the preset adhesive layer 11 is bound to the preset substrate 10. The combined effect of these forces causes the alloy foil to actually only contract to a smaller size.

[0066] It can be seen from the actual situation that the resistance of alloy foil will increase when subjected to tensile stress; on the contrary, the resistance of alloy foil will decrease when subjected to compressive stress. This phenomenon is just the opposite of the situation that the temperature coefficient of resistance of alloy foil will increase when the temperature rises, and the temperature coefficient of resistance of alloy foil will decrease when the temperature drops.

[0067] On this basis, due to the TCR s and TCR f With opposite signs (one positive and one negative), if the absolute value of the change in the temperature coefficient of resistance caused by thermal stress can be made equal to the temperature coefficient of resistance TCR of the free alloy foil f If the absolute values ​​of are close or equal, a very small resistance temperature coefficient close to zero can be obtained within a fairly wide temperature coefficient range.

[0068] Therefore, based on the above content, it can be inferred that: if on this basis, some targeted processing operations are performed on the materials that make up the resistor based on the above content, such as changing the resistance temperature coefficient of the material as the resistor part in the free state, changing the type of material as the substrate, or changing the value TCR by adjusting the resistance temperature coefficient s After the operation of the size, it can play a good compensation role in the case where the resistance temperature coefficient of the resistor is large, which is helpful to obtain a resistor structure with a lower resistance coefficient.

[0069] First, execute step S101, such as Figure 2 and Figure 3 As shown, the resistance temperature coefficient TCR of the preset resistance layer 12 in the free state is obtained. f (For details, please refer to Figure 3 Line L1 in the figure).

[0070] Here, the resistance temperature coefficient TCR of the resistor layer 12 in the free state is preset to be f It can be understood as the resistance temperature coefficient value when the preset resistance layer 12 exists in a natural state and is not subjected to external forced force. This value is related to the composition and microstructure of the material.

[0071] Next, execute step S102, such as Figure 2 and Figure 3 As shown, the resistance temperature coefficient change value TCRs generated by the preset substrate 10 and the preset resistor layer 12 due to the thermal stress is obtained (for details, please refer to Figure 3 line L2 in the figure).

[0072] In some embodiments, the resistance temperature coefficient change value TCR generated by the predetermined substrate 10 and the predetermined resistor layer 12 due to the thermal stress is obtained. s ;include:

[0073] Obtain the thermal expansion coefficient α of the preset substrate 10 c ;

[0074] Obtain the thermal expansion coefficient related value α of the preset resistor layer 12 m ;

[0075] α c and α m Substituting into the following relationship (1), the change in the temperature coefficient of resistance TCR is calculated. s :

[0076] TCR S =-k(α m -α c ) (1);

[0077] Where k is the gauge factor.

[0078] Here, k is a gauge factor, which is a constant. In some cases, k may be a gauge factor of the preset resistance layer 12 .

[0079] In addition, the thermal expansion coefficient related value α mentioned here m The understanding of can be as follows: it is not the value of the thermal expansion coefficient directly obtained when the preset resistance layer 12 itself is subjected to thermal stress. It can be understood that when the preset resistance layer 12 is bonded to the preset substrate 10 by the preset bonding layer 11, under the action of thermal stress, the expansion amount of the preset resistance layer 12 changes on the basis of the expansion and contraction of the preset substrate 10 due to the restraint of the preset bonding layer 11. Based on these changes, after a series of conversions or data processing, the value related to the thermal expansion coefficient of the preset bonding layer 11 is obtained, that is, the thermal expansion coefficient related value α m .

[0080] In some embodiments, the actual expansion and contraction amount of the preset resistance layer 12 on the preset substrate 10 is defined as d. m The following relationship may exist between the actual expansion and contraction amount of the preset resistance layer 12 fixed on the preset substrate 10 by the preset adhesive layer 11:

[0081] α m =B×d

[0082] Among them, B can be a constant, or further a relationship required in some conversion process, which can be determined according to the material of the preset resistance layer actually selected, and is not specifically limited here.

[0083] It can be understood that during the operation of the resistor, the thermal expansion coefficients of the preset substrate 10 and the alloy foil included in the preset resistor layer 12 have different values. Specifically, the thermal expansion coefficient of the alloy foil itself, the thermal expansion coefficient of the preset adhesive layer 11, and the thermal expansion coefficient of the preset substrate 10 (α c ) are different. When the preset resistor layer 12 is subjected to thermal stress, compressive stress or tensile stress will be received on the preset substrate 10. The effect of these stresses will be reflected on the resistor and will cause the resistance temperature coefficient to change, that is, the resistance temperature coefficient change value TCRs is generated. Therefore, by changing the parameters of the materials mentioned in the above content, the resistance temperature parameters of the resistor can be changed to some extent, for example, the resistance temperature coefficient change value TCR of the preset resistor layer 12 can be changed to s When the trend of line L2 is changed to the trend of line L5, it can be beneficial to reduce the resistance temperature coefficient of the resistor.

[0084] On this basis, due to the TCR s and TCR fWith opposite signs (one positive and one negative), if the temperature coefficient of resistance caused by thermal stress changes by s The absolute value of the resistance temperature coefficient TCR of the free alloy foil f When the absolute values ​​of are close or equal, a resistor structure with a very small resistance temperature coefficient close to zero can be obtained within a fairly wide temperature coefficient range. Furthermore, if one wants to obtain the resistance temperature coefficient change value TCRs caused by thermal stress and the resistance temperature coefficient TCR of the free alloy foil f To achieve similar or equal effects, it is necessary to carry out targeted treatment on the materials contained in the resistor layer, and the temperature coefficient of resistance TCR f The acquisition of the resistance temperature coefficient change value TCRs provides a good prerequisite for determining the processing conditions.

[0085] Next, step S103 is performed to determine the temperature coefficient of resistance TCR. f And the resistance temperature coefficient change value TCR s Get the results TCR r .

[0086] Finally, step S104 is executed. Figure 3 and Figure 4 As shown, the target material A includes a target resistance layer 22, and based on the result TCR r Determine the processing conditions of target material A.

[0087] In some embodiments, based on the temperature coefficient of resistance TCR f And the resistance temperature coefficient change value TCR s Get the results TCR r ,include:

[0088] TCR f and TCR s Substituting into the following relationship (2), the result TCR is calculated r :

[0089] TCR r = TCR f –k(α m -α c ) = TCR f +kα c - kα m (2).

[0090] In some embodiments, the target material A includes a substrate 20, based on the result TCR r Determining the processing conditions of the target material A includes:

[0091] Based on the results TCR rTarget parameters of the substrate 20 are determined.

[0092] In some embodiments, the target parameter includes a coefficient of thermal expansion of substrate 20 .

[0093] Thermal expansion coefficient α of the substrate material c The impact on the relevant values ​​of the resistance temperature coefficient of the resistor can be analyzed from the following two aspects:

[0094] First, from the perspective of the temperature coefficient of resistance, it can be seen from the content of relation (2) that according to the relation TCR r =TCR f +kα c -kα m When the same preset resistor 12 is set on different substrate materials, the temperature coefficient TCR of the alloy foil in the free state f The thermal expansion coefficient of the alloy foil is related to α m The same value can also be obtained by selecting a preset adhesive layer 11. Then, for the material of the substrate, the thermal expansion coefficient α of the selected material is c The larger the resistor's temperature coefficient TCR r The more positive.

[0095] The second aspect: Analysis from the temperature coefficient range: According to the temperature coefficient range calculation formula ΔTCR r =ΔTCR f +kΔα c -kΔα m , theoretically, in the above formula, Δα c The larger the value, the greater the ΔTCR r The larger the value, the smaller the temperature coefficient value is because the higher the temperature is, the smaller the ΔTCR is. r (TCR r (125℃)-TCR r (-55℃)) is a negative value, so Δα c The larger the value, the greater the ΔTCR r The larger the value, the greater the ΔTCR r The smaller the absolute value of the value, the greater the difference in thermal expansion coefficient of the substrate Δα c (α c (125℃)-α c (-55℃)) The larger the temperature coefficient range |ΔTCR r (TCR r (125℃)-TCR rThat is to say, when a substrate material with a larger thermal expansion coefficient is used, the closer the resistance temperature coefficient and the temperature coefficient range are to zero, which helps to obtain a resistor with a lower temperature coefficient.

[0096] Table 1 Using conventional ceramic substrate

[0097]

[0098] Table 2 Using the preset substrate

[0099]

[0100] Here, the thermal expansion parameter of the preset substrate used is greater than the thermal expansion coefficient of the conventional ceramic substrate. The material of the preset substrate can be selected from at least one of sapphire, zirconium oxide, microcrystalline glass, silicon nitride, aluminum nitride or a combination thereof.

[0101] It can also be seen from Tables 1 and 2 above (using conventional ceramic substrates and preset substrates as substrates to produce alloy foil resistor products, and the temperature coefficient comparison of the products is shown in Tables 1 and 2.) that the above inference is correct. When a preset substrate with a larger thermal expansion coefficient is used as the preset substrate 10, the obtained resistor has a lower resistance temperature coefficient at -55°C and 125°C, and the maximum value does not exceed 0.5ppm / °C. It also has good performance in terms of the extreme difference of the temperature coefficient, and the maximum absolute value does not exceed 0.6ppm / °C.

[0102] Continue to refer Figure 4 In some embodiments, based on the result TCR r Determine treatment conditions, including:

[0103] TCR r Comparing the resistance temperature coefficient with the reference resistance layer after being processed in a preset manner to obtain a comparison result;

[0104] The processing parameters of the target resistor layer 22 are determined based on the comparison result and the processing parameters of the reference resistor layer in the preset processing mode.

[0105] Here, the reference resistor layer needs to have the same material composition as the target resistor layer 22, and it can be derived from the same batch of alloy foil. There is no clear limitation on which resistor layer can be used as the reference resistor layer. It can be any suitable resistor layer obtained after a preset processing method. It can be a resistor layer applied to the resistor structure and making the resistance temperature coefficient of the resistor structure close to zero, or it can be a resistor layer applied to the resistor structure and making the resistance temperature coefficient of the resistor structure fall within a numerical range. Not limited to this, it can also be a resistor layer that makes the resistance temperature coefficient of the resistor meet other conditions. They can all be used as reference standards when determining the processing parameters of the target resistor layer 22.

[0106] For example, the TCR calculated for a preset resistor is r When the value is a negative number and is far away from zero, it can look for a resistor layer that makes the resistance temperature coefficient of the resistor close to 0 or a positive value as a reference resistor layer and compare it with it (for example, it can observe whether the difference in the resistance temperature coefficient between the two is too large or determine whether the selected reference resistor layer is suitable based on the characteristics of the material, etc.), and determine the processing parameters of the target resistor layer 22 according to the processing parameters in the preset processing method.

[0107] In some cases, the specific operation of "for example, observing whether the difference in the resistance temperature coefficient between the two is too large or determining whether the selected reference resistance layer is suitable based on the characteristics of the material" may include determining the processing parameters of the target resistance layer 22 by referring to the processing parameters used when obtaining relevant numerical values ​​for a product corresponding to a certain serial number in Table 1 above.

[0108] In some embodiments, the target material A is the target resistor layer 22. After obtaining the processing conditions, the processing method further includes:

[0109] A heat treatment process is performed on the target resistance layer 22 .

[0110] In some embodiments, the temperature range of the heat treatment process is between 300°C and 500°C (including endpoint values), for example, 320°C, 340°C, 360°C, 380°C, 400°C, 420°C, 440°C, 460°C, 480°C, etc.

[0111] It can be understood that by executing the heat treatment process, the structure and material properties of the target material A can be stabilized, which helps to reduce defects. The heat treatment process can be executed to achieve the effect of changing the temperature coefficient of resistance in its free state.

[0112] Further, it can be understood that after the target resistor layer 22 is processed based on the processing conditions, its temperature coefficient of resistance TCR r from Figure 3 The change trend of the original line L1 is changed to the change trend of line L4, which is conducive to changing the TCR of the original change trend of line L3. r value, thereby helping to obtain a resistor structure with a lower temperature coefficient of resistance.

[0113] On this basis, when the target resistance layer 22 for adjusting the temperature coefficient of resistance in the free state is matched with a suitable target bonding layer 21 (for details, please refer to the attached Figure 5 ) and a suitable substrate 20 (please refer to the attached Figure 5 ), it is advantageous to obtain a resistor having an absolute value of a temperature coefficient lower than 2ppm / °C.

[0114] For example, the absolute value of the temperature coefficient of resistance of a resistor can be found at:

[0115] Greater than or equal to 0 and less than 2, greater than or equal to 0 and less than or equal to 1.8ppm / ℃ (for example, -1.8ppm / ℃ to 1.8ppm / ℃), greater than or equal to 0 and less than or equal to 1.5ppm / ℃ (for example, -1.5ppm / ℃ to 1.5ppm / ℃), greater than or equal to 0 and less than or equal to 1ppm / ℃ (for example, -1ppm / ℃ to 1ppm / ℃), greater than or equal to 0 and less than or equal to 0.5ppm / ℃ (for example, -0.5ppm / ℃ to 0.5ppm / ℃), etc.

[0116] In some embodiments, the types of resistors may include but are not limited to plug-in alloy foil resistors and chip alloy foil resistors, but are not limited thereto and may also be other types of resistors.

[0117] Continue to refer Figure 4 In some embodiments, the target material A includes an adhesive layer 21, based on the result TCR r Determine the processing conditions of target material A, including:

[0118] TCR based on results r Target parameters of the adhesive layer 21 are determined.

[0119] In some embodiments, the target parameter includes at least the bonding force between the adhesive layer 21 and the substrate 20 .

[0120] It can be understood that the bonding force between the adhesive layer 21 and the target resistor layer 22 will affect the expansion and contraction of the target resistor layer 22 on the substrate 20, thereby affecting the change value of the resistance temperature coefficient under the action of thermal stress, and further affecting the resistance temperature coefficient of the resistor. Therefore, when the result TCR is obtained rAfterwards, the value range of the bonding force between the adhesive layer 21 and the substrate 20 can be determined according to the properties of the numerical value (such as the absolute value and the positive and negative values, etc.), so as to achieve the effect of reducing the resistance temperature coefficient of the resistor finally obtained.

[0121] In some embodiments, the bonding force between the adhesive layer 21 and the substrate 20 may be determined according to the comprehensive effect of the target resistance layer 22 and the substrate 20 on the temperature coefficient of resistance, and further the specific material type of the adhesive layer 21 may be determined.

[0122] In some specific embodiments, when the material of the target resistance layer 22 remains unchanged, the specific value of the target parameter of the adhesive layer 21 can also be determined by comparing with the corresponding parameters of the preset adhesive layer 11 or the parameters of some adhesive layers with reference significance.

[0123] It can be understood that after at least one of the substrate 20 and the adhesive layer 21 is processed according to the processing method provided in the embodiment of the present disclosure, it can help to increase the temperature coefficient of resistance TCR s from Figure 3 The change trend of the original line L2 is changed to the change trend of line L5, which is conducive to changing the TCR of the original change trend of line L3. r value, thereby helping to obtain a resistor structure with a lower temperature coefficient of resistance.

[0124] It is understandable that in the technical solution of the material processing method provided by the embodiment of the present disclosure, a resistor with a low temperature coefficient of resistance can be obtained by using any of the above embodiments alone, but it is not limited thereto, and a resistor with a low temperature coefficient of resistance can also be obtained by using the combined effect of the embodiments. For example:

[0125] A resistor with a lower temperature coefficient of resistance can be obtained by heat-treating the target resistor layer 22 alone, or by selecting target parameters of the material of the bonding layer 21 or the substrate 20 alone, or by combining heat-treating the target resistor layer 22 and selecting target parameters of the material of the bonding layer 21 or the substrate 20. Specifically, the selection can be made flexibly according to the actual situation, and no specific limitation is made here.

[0126] The low temperature coefficient alloy foil fixed resistor produced in the embodiment of the present disclosure has the characteristic of a small resistance value change rate with temperature change, has a very stable resistance value under a wide range of temperature changes, and also has good long-term stability and reliability.

[0127] The present disclosure also provides a resistor, such as Figure 5 and Figure 6 As shown, the resistors include:

[0128] Target material A;

[0129] The target material A is located on the substrate 20, and the target material A includes at least the substrate 20 and the target resistance layer 22 located on the substrate 20; wherein the target material A is obtained by using the processing method provided in any of the above embodiments.

[0130] In some embodiments, the substrate material includes, but is not limited to, one or more of a ceramic substrate, a silicon substrate, a glass substrate, and an organic polymer substrate.

[0131] In some specific embodiments, the material of the substrate 20 includes at least one of sapphire, zirconium oxide, microcrystalline glass, silicon nitride, aluminum nitride or a combination thereof.

[0132] According to the above content, it can be known that, in the case of the same material of the resistor layer, increasing the thermal expansion coefficient of the substrate 20 helps to reduce the resistance temperature coefficient of the resistor. Therefore, when a material with a larger thermal expansion coefficient is used as the material of the substrate, compared with the case of using a ceramic substrate as the material of the substrate, the resistor obtained has a lower resistance temperature coefficient at -55°C and 125°C, with the highest value not exceeding 0.5ppm / °C, and also has good performance in terms of the extreme difference of the temperature coefficient, with the maximum value not exceeding 0.6ppm / °C, which helps to reduce the resistance temperature coefficient of the resistor finally obtained, making it equal to zero or infinitely close to zero.

[0133] In some embodiments, the material of the preset resistance layer 12 can be at least one of nickel-chromium, Ivan alloy, Kama alloy, hexavalent alloy, etc., or a combination thereof.

[0134] In some specific embodiments, the target resistance layer 22 may be a nickel-chromium alloy foil material.

[0135] In some embodiments, the target resistance layer 22 may be a material that has been subjected to heat treatment.

[0136] In some embodiments, the temperature range of the heat treatment process is between 300°C and 500°C (including endpoint values), for example, 320°C, 340°C, 360°C, 380°C, 400°C, 420°C, 440°C, 460°C, 480°C, etc.

[0137] It can be understood that by executing the heat treatment process, the structure and material properties of the target material A can be stabilized, which helps to reduce defects. The heat treatment process can be executed to achieve the effect of changing the temperature coefficient of resistance in its free state.

[0138] In some embodiments, the target material A further includes an adhesive layer 21 , and the adhesive layer 21 is located between the substrate 20 and the resistor layer 22 .

[0139] In some embodiments, the material of the adhesive layer 21 may include epoxy resin, polyimide adhesive or adhesive film, silicone adhesive, etc.

[0140] It can be understood that the bonding force between the adhesive layer 21 and the substrate 20 will affect the expansion and contraction of the target resistor layer 22 on the substrate 20, thereby affecting the change value of the resistance temperature coefficient under the action of thermal stress, and further affecting the resistance temperature coefficient of the resistor. Therefore, when the result TCR is obtained r Afterwards, the value range of the bonding force between the adhesive layer 21 and the substrate 20 can be determined according to the properties of the numerical value (such as the absolute value and the positive and negative values, etc.), so as to achieve the effect of reducing the resistance temperature coefficient of the resistor finally obtained.

[0141] In some embodiments, the bonding force between the adhesive layer 21 and the substrate 20 may be determined according to the comprehensive effect of the target resistance layer 22 and the substrate 20 on the temperature coefficient of resistance, and further the specific material type of the adhesive layer 21 may be determined.

[0142] In some specific embodiments, when the material of the target resistance layer 22 remains unchanged, the specific value of the target parameter of the adhesive layer 21 can also be determined by comparing with the corresponding parameters of the preset adhesive layer 11 or the parameters of some adhesive layers with reference significance.

[0143] It is understandable that in the technical solution of the material processing method provided by the embodiment of the present disclosure, a resistor with a low temperature coefficient of resistance can be obtained by using any of the above embodiments alone, but it is not limited thereto, and a resistor with a low temperature coefficient of resistance can also be obtained by using the combined effect of the embodiments. For example:

[0144] A resistor with a lower temperature coefficient of resistance can be obtained by heat-treating the target resistor layer 22 alone, or by selecting target parameters of the material of the bonding layer 21 or the substrate 20 alone, or by combining heat-treating the target resistor layer 22 and selecting target parameters of the material of the bonding layer 21 or the substrate 20. Specifically, the selection can be made flexibly according to the actual situation, and no specific limitation is made here.

[0145] In some embodiments, the absolute value of the resistance temperature coefficient of the resistor is less than 2 ppm / °C (including the end value). For example, the absolute value of the resistance temperature coefficient of the resistor can be:

[0146] Greater than or equal to 0 and less than 2, greater than or equal to 0 and less than or equal to 1.8ppm / ℃ (for example, -1.8ppm / ℃ to 1.8ppm / ℃), greater than or equal to 0 and less than or equal to 1.5ppm / ℃ (for example, -1.5ppm / ℃ to 1.5ppm / ℃), greater than or equal to 0 and less than or equal to 1ppm / ℃ (for example, -1ppm / ℃ to 1ppm / ℃), greater than or equal to 0 and less than or equal to 0.5ppm / ℃ (for example, -0.5ppm / ℃ to 0.5ppm / ℃), etc.

[0147] The embodiments of the present disclosure conduct 100 temperature shock tests, 2000h high temperature exposure tests and 2000h life tests on alloy foil resistors produced using a preset substrate (for example, at least one of sapphire, zirconium oxide, microcrystalline glass, silicon nitride, aluminum nitride or a combination thereof), and the experimental results are shown in Table 3.

[0148] Table 3 Long-term test change rate

[0149]

[0150] According to the "Detailed Specifications for Precision Alloy Foil Fixed Resistors", the resistance change after the temperature shock test should not exceed ±(0.05%R+0.001Ω), the resistance change after the high temperature exposure test should not exceed ±(0.05%R+0.001Ω), and the resistance change after the life test should not exceed ±(0.05%R+0.001Ω). It can be seen from the above table data that the long-term test data of the alloy foil resistor products produced using the above substrate as the base are all within the normal range of variation, and the low temperature coefficient alloy foil fixed resistors produced by the embodiments of the present disclosure have good long-term stability and reliability.

[0151] In some specific embodiments, Figure 6 As shown, the resistor may further include an electrode 23 , a buffer layer 24 and a protective layer 25 .

[0152] That is to say, the low temperature coefficient alloy foil fixed resistor produced by the embodiment of the present disclosure has the characteristic of a small resistance value change rate with temperature changes, has a very stable resistance value under a wide range of temperature changes, and also has good long-term stability and reliability.

[0153] It should be noted that the material processing method for resistors provided in the embodiments of the present disclosure can be applied to any resistor structure that needs to change the temperature coefficient of resistance, and no further limitation is given here. The embodiments of the material processing method for resistors and the embodiments of resistors provided in the present disclosure belong to the same concept; the technical features in the technical solutions recorded in the embodiments can be arbitrarily combined without conflict.

[0154] The above description is only a preferred embodiment of the present disclosure and is not intended to limit the protection scope of the present disclosure. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present disclosure should be included in the protection scope of the present disclosure.

Claims

1. A method for processing a material for a resistor, characterized in that: The resistor at least includes a preset substrate and a preset resistance layer located on the preset substrate, and the method includes: Obtaining the temperature coefficient of resistance TCR of the preset resistance layer in a free state f ; Obtaining a resistance temperature coefficient change value TCR generated by the preset substrate and the preset resistor layer due to thermal stress s ; Based on the temperature coefficient of resistance TCR f And the resistance temperature coefficient change value TCR s Get the results TCR r ; Based on the results TCR r Determine the processing conditions for the target material.

2. The processing method according to claim 1, characterized in that: Obtaining a resistance temperature coefficient change value TCR generated by the preset substrate and the preset resistance layer due to thermal stress s ;include: Obtain the thermal expansion coefficient α of the preset substrate c ; Obtain the thermal expansion coefficient related value α of the preset resistance layer m ; The α c And the α m Substituting into the following relationship (1), the resistance temperature coefficient change value TCR is calculated s : TCR S =-k(a m -a c ) (1); Where k is the gauge factor.

3. The processing method according to claim 2, characterized in that: Based on the temperature coefficient of resistance TCR f And the resistance temperature coefficient change value TCR s Get the results TCR r ,include: The TCR f and the TCR s Substituting into the following relationship (2), the result TCR is calculated r : TCR r = TCR f –k(α m -α c ) =TCR f +kα c - kα m (2)。 4. The processing method according to any one of claims 1 to 3, characterized in that: The target material includes a target resistance layer, based on the result TCR r Determining the processing conditions includes: The TCR r Comparing the resistance temperature coefficient with the reference resistance layer after being processed in a preset manner to obtain a comparison result; The processing parameters of the target resistance layer are determined based on the comparison result and the processing parameters of the reference resistance layer in a preset processing mode.

5. The processing method according to claim 4, characterized in that: The target material is a target resistance layer. After obtaining the processing conditions, the processing method further includes: performing a heat treatment process on the target resistance layer; And / or, the temperature range of the heat treatment process is between 300°C and 500°C.

6. The processing method according to any one of claims 1 to 3, characterized in that: The target material includes a substrate, based on the result TCR r Determining processing conditions for the target material, including: Based on the results TCR r Target parameters for the substrate are determined.

7. The processing method according to claim 6, characterized in that: The target material includes an adhesive layer, based on the result TCR r Determining processing conditions for the target material, including: Based on the results TCR r determining target parameters of the bonding layer; And / or, the target parameter at least includes a bonding force between the adhesive layer and the substrate.

8. A resistor, characterized in that: The resistor comprises: A target material, the target material comprising at least a substrate and a target resistance layer located on the substrate; wherein the target material is obtained by the processing method according to any one of claims 1 to 7.

9. The resistor according to claim 8, characterized in that The material of the substrate includes at least one of sapphire, zirconium oxide, microcrystalline glass, silicon nitride, aluminum nitride or a combination thereof.

10. The resistor according to claim 8, characterized in that The target material further includes an adhesive layer located between the substrate and the target resistance layer.

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