A wafer breakage detection apparatus and method
The silicon wafer inspection device, which uses four sets of sensors and a fragment detection module, solves the problems of high cost and cumbersome maintenance of existing devices, and achieves low-cost and efficient detection of silicon wafer edge damage, thus avoiding equipment failure.
Patent Information
- Application Number
- CN202411971980.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-30
- Publication Date
- 2026-02-03
- Estimated Expiration
- 2044-12-30
AI Technical Summary
Existing silicon wafer breakage detection devices are costly and cumbersome to maintain, and are difficult to effectively detect edge damage to silicon wafers, which may lead to equipment blockage and damage.
The detection device employs a combination of four sensor groups and a fragment detection module. The sensor groups sense the four edges of the silicon wafer and transmit the signals to the fragment detection module to determine whether the edges of the silicon wafer are damaged, which simplifies the structure and reduces costs.
It enables low-cost and efficient silicon wafer breakage detection, simplifies the maintenance process, and avoids the risk of equipment blockage and damage.
Smart Images
Figure CN119764205B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of silicon wafer inspection technology, and in particular to a device and method for detecting broken silicon wafers. Background Technology
[0002] During the production of silicon wafers, the wet-process chain equipment in current photovoltaic plants generates a certain amount of broken wafers, i.e., wafers with broken edges and corners. Broken wafers are scrapped; if they are not detected and handled promptly, they may cause blockages in subsequent equipment or even malfunction. Therefore, to avoid these situations, broken wafers are typically inspected before entering the next processing stage to identify and dispose of any broken wafers.
[0003] Currently, the commonly used fragment detection device is the CCD industrial camera, which can detect fragments. However, the above-mentioned fragment detection device has the problems of high cost and complicated maintenance. Summary of the Invention
[0004] This invention provides a device and method for detecting broken silicon wafers, in order to solve the problems of high cost and cumbersome maintenance of existing broken wafer detection devices.
[0005] In a first aspect, embodiments of the present invention provide a silicon wafer breakage detection device, wherein the silicon wafer includes a first side and a second side disposed opposite to each other along a first direction, and a third side and a fourth side disposed opposite to each other along a second direction; the first direction and the second direction intersect; the silicon wafer moves along the first direction with a silicon wafer transfer stage;
[0006] The fragment detection device includes a detection module and a fragment judgment module;
[0007] The detection module includes a first sensor group, a second sensor group, a third sensor group, and a fourth sensor group; the first sensor group is used to sequentially sense the first side and the second side, the second sensor group is used to sequentially sense the first side and the second side, and the sum of the sensing ranges of the first sensor group and the second sensor group in the second direction is greater than or equal to the side length of the first side; the third sensor group is used to sense the third side; and the fourth sensor group is used to sense the fourth side.
[0008] The fragment detection module is communicatively connected to the first sensor group, the second sensor group, the third sensor group, and the fourth sensor group, respectively. It is used to receive the first sensing signal output by the first sensor group, the second sensing signal output by the second sensor group, the third sensing signal output by the third sensor group, and the fourth sensing signal output by the fourth sensor group. Based on the first sensing signal and the second sensing signal, it determines whether the first edge and the second edge of the silicon wafer are damaged. Based on the third sensing signal and the fourth sensing signal, it determines whether the third edge and the fourth edge of the silicon wafer are damaged.
[0009] Optionally, the sensing range of the first sensor group in the second direction is greater than or equal to half the length of the first side;
[0010] The sensing range of the second sensor group in the second direction is greater than or equal to half the length of the second side.
[0011] Optionally, the first sensor group includes at least two first sensors arranged along the second direction, and the first sensing signal output by the first sensor group includes at least two first sub-sensing signals;
[0012] The second sensor group includes at least two second sensors arranged along the second direction, and the second sensing signal output by the second sensor group includes at least two second sub-sensing signals;
[0013] The third sensor group includes at least one third sensor, and the third sensing signal output by the third sensor group includes at least one third sub-sensing signal;
[0014] The fourth sensor group includes at least one fourth sensor, and the fourth sensing signal output by the fourth sensor group includes at least one fourth sub-sensing signal.
[0015] Optionally, the third sensor and the fourth sensor correspond one-to-one;
[0016] Along the second direction, the third sensor and the fourth sensor overlap.
[0017] Optionally, the first sensor includes a photoelectric sensor;
[0018] The second sensor includes a photoelectric sensor;
[0019] The third sensor includes a photoelectric sensor;
[0020] The fourth sensor includes a photoelectric sensor.
[0021] Secondly, embodiments of the present invention provide a method for detecting broken silicon wafers, applied to the broken wafer detection device described in the first aspect, the broken wafer detection method comprising:
[0022] Receives a first sensing signal output by the first sensor group, a second sensing signal output by the second sensor group, a third sensing signal output by the third sensor group, and a fourth sensing signal output by the fourth sensor group;
[0023] The first and second edges of the silicon wafer are determined to be damaged based on the first and second sensing signals.
[0024] The third and fourth edges of the silicon wafer are determined to be damaged based on the third and fourth sensing signals.
[0025] Optionally, the first sensor group includes at least two first sensors arranged along the second direction, and the first sensing signal output by the first sensor group includes at least two first sub-sensing signals; the second sensor group includes at least two second sensors arranged along the second direction, and the second sensing signal output by the second sensor group includes at least two second sub-sensing signals.
[0026] Determining whether the first and second edges of the silicon wafer are damaged based on the first sensing signal and the second sensing signal includes:
[0027] During the movement of the silicon wafer along the first direction, if when a portion of the first sub-sensing signal changes for the first time, a portion of the first sub-sensing signal remains unchanged for a period exceeding a first preset time, or when a portion of the second sub-sensing signal changes for the first time, a portion of the second sub-sensing signal remains unchanged for a period exceeding a second preset time, then the first edge is determined to be damaged.
[0028] During the movement of the silicon wafer along the first direction, if, during the second change of a portion of the first sub-sensing signal, a portion of the first sub-sensing signal remains unchanged for a period exceeding a third preset time, or during the second change of a portion of the second sub-sensing signal, a portion of the second sub-sensing signal remains unchanged for a period exceeding a fourth preset time, then the second edge is determined to be damaged.
[0029] Optionally, determining whether the first and second edges of the silicon wafer are damaged based on the first sensing signal and the second sensing signal further includes:
[0030] During the movement of the silicon wafer along the first direction, if when a portion of the first sub-sensing signal changes for the first time, a portion of the first sub-sensing signal remains unchanged for a period exceeding a fifth preset time, or when a portion of the second sub-sensing signal changes for the first time, a portion of the second sub-sensing signal remains unchanged for a period exceeding a sixth preset time, then it is determined that the damaged length of the first edge in the first direction is greater than a first preset size, wherein the fourth preset time is greater than the first preset time, and the sixth preset time is greater than the second preset time;
[0031] During the movement of the silicon wafer along the first direction, if, during the second change of a portion of the first sub-sensing signal, a portion of the first sub-sensing signal remains unchanged for a period exceeding a seventh preset time, or during the second change of a portion of the second sub-sensing signal, a portion of the second sub-sensing signal remains unchanged for a period exceeding an eighth preset time, then it is determined that the damaged length of the second side in the first direction is greater than a second preset size, wherein the third preset time is greater than the seventh preset time, and the fourth preset time is greater than the eighth preset time.
[0032] Optionally, the third sensor group includes at least one third sensor, and the third sensing signal output by the third sensor group includes at least one third sub-sensing signal; the fourth sensor group includes at least one fourth sensor, and the fourth sensing signal output by the fourth sensor group includes at least one fourth sub-sensing signal.
[0033] Determining whether the third and fourth edges of the silicon wafer are damaged based on the third and fourth sensing signals includes:
[0034] If, during the movement of the silicon wafer along the first direction, the number of changes in the third sub-sensing signal is greater than two or less than two, then the third side is determined to be damaged.
[0035] If, during the movement of the silicon wafer along the first direction, the fourth sub-sensing signal changes more than twice or less than twice, then the fourth side is determined to be damaged.
[0036] Optionally, the third sensor group includes at least one third sensor, and the third sensing signal output by the third sensor group includes at least one third sub-sensing signal; the fourth sensor group includes at least one fourth sensor, and the fourth sensing signal output by the fourth sensor group includes at least one fourth sub-sensing signal; the third sensor and the fourth sensor correspond one-to-one; along the second direction, the third sensor and the fourth sensor overlap;
[0037] Determining whether the third and fourth edges of the silicon wafer are damaged based on the third and fourth sensing signals includes:
[0038] If, during the movement of the silicon wafer along the first direction, there are different corresponding third and fourth sub-sensing signals, then it is determined that the third or fourth side is damaged.
[0039] The technical solution of this invention provides a fragment detection device including a detection module and a fragment judgment module. The detection module has four sets of sensors that can sense the four edges of a silicon wafer and transmit the sensed signals to the fragment judgment module. The fragment judgment module can determine whether the four edges of the silicon wafer are broken based on the received sensed signals, thus realizing fragment detection of the silicon wafer. Compared with the fragment detection devices using industrial cameras in the prior art, the fragment detection device provided by this invention, including four sets of sensors and a fragment judgment module, has a simpler structure, lower cost, and is easier to maintain.
[0040] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of the present invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description
[0041] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0042] Figure 1 This is a schematic diagram of the structure of a silicon wafer provided in an embodiment of the present invention;
[0043] Figure 2 This is a schematic diagram of the structure of a fragment detection device provided in an embodiment of the present invention;
[0044] Figure 3 This is a schematic diagram of another fragment detection device provided in an embodiment of the present invention;
[0045] Figure 4 A flowchart of a fragment detection method provided in an embodiment of the present invention;
[0046] Figure 5 A flowchart of another fragment detection method provided in an embodiment of the present invention;
[0047] Figure 6 A flowchart of another fragment detection method provided in an embodiment of the present invention;
[0048] Figure 7 This is a flowchart of another fragment detection method provided in an embodiment of the present invention. Detailed Implementation
[0049] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.
[0050] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or device that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or devices. The terms "upper," "lower," "left," "right," etc., indicate orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings and are only used to describe the relative positional relationships between components or constituent parts, and do not specifically limit the specific installation orientation of each component or constituent part.
[0051] Figure 1 This is a schematic diagram of a silicon wafer structure provided in an embodiment of the present invention, with reference to... Figure 1 In this embodiment of the invention, the silicon wafer includes a first side 10 and a second side 20 disposed opposite each other along a first direction X, and a third side 30 and a fourth side 40 disposed opposite each other along a second direction Y. It should be noted that the first direction X and the second direction Y intersect, and the silicon wafer can move along the first direction X with the silicon wafer transport stage.
[0052] Figure 1 The silicon wafer shown is a rectangular silicon wafer, with the first side 10 having the same side length as the second side 20, and the third side 30 having the same side length as the fourth side 40.
[0053] Figure 2 This is a schematic diagram of a fragment detection device provided in an embodiment of the present invention, with reference to... Figure 2The fragment detection device in this embodiment of the invention includes a detection module 50 and a fragment judgment module 60. The detection module 50 includes a first sensor group 51, a second sensor group 52, a third sensor group 53, and a fourth sensor group 54. The first sensor group 51 is used to sequentially sense the first side 10 and the second side 20. The second sensor group 52 is used to sequentially sense the first side 10 and the second side 20, and the sum of the sensing ranges of the first sensor group 51 and the second sensor group 52 in the second direction Y is greater than or equal to the side length of the first side 10. The third sensor group 53 is used to sense the third side 30. The fourth sensor group 54 is used to sense the fourth side 40.
[0054] The fragment detection module 60 is communicatively connected to the first sensor group 51, the second sensor group 52, the third sensor group 53, and the fourth sensor group 54, respectively. It is used to receive the first sensing signal output by the first sensor group 51, the second sensing signal output by the second sensor group 52, the third sensing signal output by the third sensor group 53, and the fourth sensing signal output by the fourth sensor group 54. It determines whether the first edge 10 and the second edge 20 of the silicon wafer are damaged based on the first sensing signal and the second sensing signal, and determines whether the third edge 30 and the fourth edge 40 of the silicon wafer are damaged based on the third sensing signal and the fourth sensing signal.
[0055] For example, the detection module 50 can be set on one side of the silicon wafer transport stage, such as above the silicon wafer transport stage. As the silicon wafer moves along the first direction X with the silicon wafer transport stage, the silicon wafer will pass under the detection module 50. Each sensor group in the detection module 50 will sense each side of the silicon wafer. Specifically, the first sensor group 51 and the second sensor group 52 can sense the first side 10 and the second side 20 of the silicon wafer in sequence, the third sensor group 53 can sense the third side 30 of the silicon wafer, and the fourth sensor group 53 can sense the fourth side 40 of the silicon wafer. It is understandable that the sensing signal output by the sensor group that senses the edge of the silicon wafer when the edge is damaged is different from the sensing signal output by the sensor group that senses the edge when the edge of the silicon wafer is not damaged. Therefore, the wafer damage determination module 60 can determine whether the first edge 10 and the second edge 20 of the silicon wafer are damaged based on the first sensing signal output by the first sensor group 51 and the second sensing signal output by the second sensor group 52, and can determine whether the third edge 30 and the fourth edge 40 of the silicon wafer are damaged based on the third sensing signal output by the third sensor group 53 and the fourth sensing signal output by the fourth sensor group 54.
[0056] This invention provides a fragment detection device including a detection module 50 and a fragment judgment module 60. The four sensor groups in the detection module 50 can sense the four edges of a silicon wafer and transmit the sensed signals to the fragment judgment module 60. The fragment judgment module 60 can determine whether the four edges of the silicon wafer are broken based on the received sense signals, thus realizing fragment detection of the silicon wafer. Compared with existing fragment detection devices that include industrial cameras, the fragment detection device provided by this invention, including four sensor groups and a fragment judgment module, has a simple structure, low cost, and is easy to maintain.
[0057] As one possible implementation, the sensing range of the first sensor group 51 in the second direction Y is greater than or equal to half the length of the first side 10. The sensing range of the second sensor group 52 in the second direction Y is greater than or equal to half the length of the second side 20.
[0058] It should be noted that the sensing range of a sensor group is related to the number of sensors it includes. All other things being equal, the more sensors a sensor group has, the larger its sensing range. Understandably, as long as the sum of the sensing ranges of the first sensor group 51 and the second sensor group 52 in the second direction Y is greater than or equal to the side length of the first side 10, it can be ensured that the first sensor group 51 and the second sensor group 52 can sense the entire edge of the first side 10 and the entire edge of the second side 20 as the silicon wafer moves along the first direction X with the silicon wafer transport stage. To minimize the number of sensors included in the first sensor group 51 and the second sensor group 52, the sensing range of the first sensor group 51 in the second direction Y can be set to be greater than or equal to half the side length of the first side 10, and the sensing range of the second sensor group 52 in the second direction Y can be greater than or equal to half the side length of the second side 20. For example, the sensing range of the first sensor group 51 in the second direction Y is the lower half of the first side 10 and the second side 20, and the sensing range of the second sensor group 52 in the second direction Y is the upper half of the first side 10 and the second side 20; or, the sensing range of the first sensor group 51 in the second direction Y is the upper half of the first side 10 and the second side 20, and the sensing range of the second sensor group 52 in the second direction Y is the lower half of the first side 10 and the second side 20.
[0059] Figure 2 This is a schematic diagram of the structure of a fragment detection device provided in an embodiment of the present invention. Figure 3 This is a schematic diagram of another fragment detection device provided in an embodiment of the present invention, with reference to... Figure 2 and Figure 3The first sensor group 51 includes at least two first sensors 511 arranged along the second direction Y, and the first sensing signal output by the first sensor group 51 includes at least two first sub-sensing signals. The second sensor group 52 includes at least two second sensors 521 arranged along the second direction Y, and the second sensing signal output by the second sensor group 52 includes at least two second sub-sensing signals. The third sensor group 53 includes at least one third sensor 531, and the third sensing signal output by the third sensor group 53 includes at least one third sub-sensing signal. The fourth sensor group 54 includes at least one fourth sensor 541, and the fourth sensing signal output by the fourth sensor group 54 includes at least one fourth sub-sensing signal.
[0060] For example, the first sensor 511 and the second sensor 521 are respectively communicatively connected to the fragment detection module 60, and can output a first sub-sensing signal and a second sub-sensing signal to the fragment detection module 60. The fragment detection module 60 can determine whether the first edge 10 and the second edge 20 of the silicon wafer are damaged based on the received first sub-sensing signal and second sub-sensing signal. The third sensor 531 and the fourth sensor 541 are respectively communicatively connected to the fragment detection module 60, and can output a third sub-sensing signal and a fourth sub-sensing signal to the fragment detection module 60. The fragment detection module 60 can determine whether the third edge 30 and the fourth edge 40 of the silicon wafer are damaged based on the received third sub-sensing signal and fourth sub-sensing signal.
[0061] It is understandable that if the first edge 10 and the second edge 20 of the silicon wafer are not broken, then during the process of the silicon wafer moving along the first direction X with the silicon wafer transport stage, the first sub-sensing signal output by the first sensor 511 in the first sensor group 51 should change simultaneously and twice, and the second sub-sensing signal output by the second sensor 521 in the second sensor group 52 should change simultaneously and twice.
[0062] The broken edge of the silicon wafer is usually irregular. If the first edge 10 of the silicon wafer is broken, during the process of the silicon wafer moving along the first direction X with the silicon wafer transport stage, when the first sub-sensing signal output by some of the first sensors 511 changes for the first time, there will be some first sub-sensing signals output by some of the first sensors 511 that do not change at the same time. Or, when the second sub-sensing signal output by some of the second sensors 521 changes for the first time, there will be some second sub-sensing signals output by some of the second sensors 521 that do not change at the same time.
[0063] If the second edge 20 of the silicon wafer breaks, during the process of the silicon wafer moving along the first direction X with the silicon wafer transport stage, when the first sub-sensing signal output by some of the first sensors 511 changes for the second time, there will be some first sub-sensing signals output by some of the first sensors 511 that do not change at the same time; or, when the second sub-sensing signal output by some of the second sensors 521 changes for the second time, there will be some second sub-sensing signals output by some of the second sensors 521 that do not change at the same time.
[0064] Understandably, if the third side 30 of the silicon wafer does not break, then during the process of the silicon wafer moving along the first direction X with the silicon wafer transport stage, the third sub-sensing signal output by the third sensor 531 in the third sensor group 53 should change simultaneously and twice. If the fourth side 40 does not break, then during the process of the silicon wafer moving along the first direction X with the silicon wafer transport stage, the fourth sub-sensing signal output by the fourth sensor 541 in the fourth sensor group 54 should change simultaneously and twice.
[0065] The broken edge of the silicon wafer is usually irregular. If the third edge 30 of the silicon wafer is broken, then during the process of the silicon wafer moving along the first direction X with the silicon wafer transport stage, the number of changes of the third sub-sensing signal output by the third sensor 531 will not be more than two (more than two or less than two).
[0066] If the fourth edge 40 of the silicon wafer breaks, then during the process of the silicon wafer moving along the first direction X with the silicon wafer transport stage, the number of changes in the fourth sub-sensing signal output by the fourth sensor 541 will not be more than two (more than two or less than two).
[0067] exist Figure 3 In the illustrated embodiment, the two third sensors 531 included in the third sensor group 53 are arranged along the first direction X. It should be noted that, in this embodiment of the invention, the multiple third sensors 531 included in the third sensor group 53 can also be arranged along the second direction Y. The fragmentation judgment module 60 can also determine whether the third edge 30 and the fourth edge 40 of the silicon wafer are broken based on the number of changes in the third sub-sensing signal of the third sensor 531 and the number of changes in the fourth sub-sensing signal output by the fourth sensor 541.
[0068] Continue to refer to Figure 2 and Figure 3 The third sensor 531 and the fourth sensor 541 are in one-to-one correspondence. Along the second direction Y, the third sensor 531 and the fourth sensor 541 overlap.
[0069] Understandably, when the third sensor 531 and the fourth sensor 541 are in one-to-one correspondence and overlap along the second direction Y, the wafer breakage determination module 60 can determine whether the third edge 30 and the fourth edge 40 of the silicon wafer are broken based on whether the received third sub-sensing signal and the fourth sub-sensing signal are the same. Specifically, if the third edge 30 and the fourth edge 40 of the silicon wafer are not broken, then during the process of the silicon wafer moving along the first direction X with the silicon wafer transport stage, the first sub-sensing signal output by the first sensor 511 and the second sub-sensing signal output by the second sensor 521 should be the same, that is, both the third sensor 531 and the fourth sensor 541 sense the silicon wafer, or neither senses the silicon wafer. If the third edge 30 or the fourth edge 40 of the silicon wafer is broken, then during the process of the silicon wafer moving along the first direction X with the silicon wafer transport stage, there will be a difference between the first sub-sensing signal output by the first sensor 511 and the second sub-sensing signal output by the second sensor 521, that is, only the third sensor 531 senses the silicon wafer, or only the fourth sensor 541 senses the silicon wafer.
[0070] In one possible implementation, the first sensor includes a photoelectric sensor. The second sensor includes a photoelectric sensor. The third sensor includes a photoelectric sensor. The fourth sensor includes a photoelectric sensor.
[0071] For example, during the process of the silicon wafer moving along the first direction X with the silicon wafer transport stage, the light beam emitted by the photoelectric sensor can illuminate the silicon wafer transport stage and the silicon wafer. It is understood that if the light beam emitted by the photoelectric sensor illuminates the silicon wafer transport stage, the silicon wafer transport stage will not reflect the light beam back to the photoelectric sensor, or the light beam reflected back to the photoelectric sensor will be filtered by the photoelectric sensor. At this time, the sensing signal transmitted by the photoelectric sensor to the fragment judgment module 60 can be low level. If the light beam emitted by the photoelectric sensor illuminates the silicon wafer, the silicon wafer will reflect the light beam back to the photoelectric sensor, and the photoelectric sensor will convert the received light beam into a sensing signal (electrical signal). At this time, the sensing signal transmitted by the photoelectric sensor to the fragment judgment module 60 can be high level.
[0072] Optionally, the diameter C1 of the light spot formed by the beam emitted from the photoelectric sensor at a distance of 70mm from the sensor satisfies 1mm ≤ C1 ≤ 3mm. It is understandable that the smaller the diameter C1 of the light spot formed at a distance of 70mm from the photoelectric sensor, the higher the accuracy of the photoelectric sensor, but the higher the cost. By using a sensor where the diameter C1 of the light spot formed at a distance of 70mm from the photoelectric sensor satisfies 1mm ≤ C1 ≤ 3mm, the accuracy requirements for fragment detection can be met, while also ensuring that the cost remains within a relatively low range.
[0073] Based on the same inventive concept, embodiments of the present invention provide a method for detecting broken silicon wafers, which is applied to the broken wafer detection device provided in the above embodiments of the present invention. Figure 4 A flowchart of a fragment detection method provided in an embodiment of the present invention is shown below. Figure 4 The fragment detection method in this embodiment of the invention includes:
[0074] S110: Receive the first sensing signal output by the first sensor group, the second sensing signal output by the second sensor group, the third sensing signal output by the third sensor group, and the fourth sensing signal output by the fourth sensor group.
[0075] For example, refer to Figure 1 and Figure 2 ,refer to Figure 1 and Figure 2 During the movement of the silicon wafer along the first direction X by the silicon wafer transport stage, the first sensor group 51 can sequentially sense the first edge 10 and the second edge 20 of the silicon wafer and output a first sensing signal. The second sensor group 52 can sequentially sense the first edge 10 and the second edge 20 of the silicon wafer and output a second sensing signal. The third sensor group 53 can sense the third edge 30 of the silicon wafer and output a third sensing signal. The fourth sensor group 54 can sense the fourth edge 40 of the silicon wafer and output a fourth sensing signal. The first sensor group 51, the second sensor group 52, the third sensor group 53 and the fourth sensor group 54 are respectively communicatively connected to the fragment judgment module 60. The fragment judgment module 60 can receive the first sensing signal output by the first sensor group 51, the second sensing signal output by the second sensor group 52, the third sensing signal output by the third sensor group 53 and the fourth sensing signal output by the fourth sensor group 54.
[0076] S120. Determine whether the first and second sides of the silicon wafer are damaged based on the first sensing signal and the second sensing signal.
[0077] refer to Figure 1 and Figure 2 Understandably, during the movement of the silicon wafer along the first direction X with the silicon wafer transport stage, the first sensing signal output by the first sensor group 51 is different when the first edge 10 of the silicon wafer is damaged compared to when it is not damaged, and the second sensing signal output by the second sensor group 52 is also different. Similarly, the first sensing signal output by the first sensor group 51 is different when the second edge 20 of the silicon wafer is damaged compared to when it is not damaged, and the second sensing signal output by the second sensor group 52 is also different. Therefore, the wafer breakage determination module 60 can determine whether the first edge 10 and the second edge 20 of the silicon wafer are damaged based on the first sensing signal and the second sensing signal.
[0078] S130. Determine whether the third and fourth edges of the silicon wafer are damaged based on the third and fourth sensing signals.
[0079] refer to Figure 1 and Figure 2 Understandably, during the movement of the silicon wafer along the first direction X with the wafer transport stage, the third sensing signal output by the third sensor group 53 differs depending on whether the third edge 30 of the silicon wafer is damaged or not. Similarly, the fourth sensing signal output by the fourth sensor group 54 differs depending on whether the fourth edge 40 of the silicon wafer is damaged or not. Therefore, the wafer breakage detection module 60 can determine whether the third edge 30 and the fourth edge 40 of the silicon wafer are damaged based on the third and fourth sensing signals.
[0080] The embodiments of the present invention can detect silicon wafer fragments by adopting the above-described fragment detection method. Compared with the fragment detection devices in the prior art that include industrial cameras, the fragment detection device that implements the above-described fragment detection method has the advantages of simple structure, low cost and easy maintenance. Accordingly, the above-described detection method has the advantages of being simple, practical and easy to promote.
[0081] refer to Figure 2 and Figure 3 The first sensor group 51 includes at least two first sensors 511 arranged along the second direction Y, and the first sensing signal output by the first sensor group 51 includes at least two first sub-sensing signals. The second sensor group 52 includes at least two second sensors 521 arranged along the second direction Y, and the second sensing signal output by the second sensor group 52 includes at least two second sub-sensing signals. Figure 5 This is a flowchart of another fragment detection method provided by an embodiment of the present invention. Figure 5 The illustrated embodiment details how it determines whether the first and second edges of a silicon wafer are damaged based on a first sensing signal and a second sensing signal. (See reference...) Figure 5 The fragment detection method in this embodiment of the invention includes:
[0082] S210: Receive the first sensing signal output by the first sensor group, the second sensing signal output by the second sensor group, the third sensing signal output by the third sensor group, and the fourth sensing signal output by the fourth sensor group.
[0083] S220. During the movement of the silicon wafer along the first direction, if when a portion of the first sub-sensing signal changes for the first time, a portion of the first sub-sensing signal remains unchanged for a period exceeding a first preset time, or when a portion of the second sub-sensing signal changes for the first time, a portion of the second sub-sensing signal remains unchanged for a period exceeding a second preset time, then the first side is determined to be damaged.
[0084] refer to Figure 1 , Figure 2 and Figure 3It is understandable that, during the movement of the silicon wafer along the first direction X with the silicon wafer transport stage, if the first edge 10 of the silicon wafer does not break, the first sub-sensing signal output by the first sensor 511 in the first sensor group 51 will simultaneously undergo its first change, and the second sub-sensing signal output by the second sensor 521 in the second sensor group 52 will also simultaneously undergo its first change. If the first edge 10 of the silicon wafer breaks, during the movement of the silicon wafer along the first direction X with the silicon wafer transport stage, when some of the first sub-sensing signals output by the first sensor 511 change for the first time, some of the first sub-sensing signals output by the first sensor 511 will not change simultaneously; or, when some of the second sub-sensing signals output by the second sensor 521 change for the first time, some of the second sub-sensing signals output by the second sensor 521 will not change simultaneously.
[0085] Considering the installation error of the first sensor 511 in the first sensor group 51 (i.e., the multiple first sensors 511 do not completely overlap along the second direction Y), and the installation error of the second sensor 521 in the second sensor group 51 (i.e., the multiple second sensors 511 do not completely overlap along the second direction Y), to avoid false detections caused by these installation errors, this embodiment of the invention sets that during the movement of the silicon wafer along the first direction X, if, when a portion of the first sub-sensing signals changes for the first time, a portion of the first sub-sensing signals remain unchanged for a period exceeding a first preset time, or if, when a portion of the second sub-sensing signals changes for the first time, a portion of the second sub-sensing signals remain unchanged for a period exceeding a second preset time, then the first side 10 is determined to be damaged. It should be noted that this embodiment of the invention does not limit the specific values of the first and second preset times, and they can be the same or different; for example, both the first and second preset times can be 100ms.
[0086] S230. During the movement of the silicon wafer along the first direction, if, when a portion of the first sub-sensing signal changes for the second time, a portion of the first sub-sensing signal remains unchanged for a period exceeding a third preset time, or when a portion of the second sub-sensing signal changes for the second time, a portion of the second sub-sensing signal remains unchanged for a period exceeding a fourth preset time, then the second side is determined to be damaged.
[0087] refer to Figure 1 , Figure 2 and Figure 3It is understandable that, during the movement of the silicon wafer along the first direction X with the silicon wafer transport stage, if the second edge 20 of the silicon wafer does not break, the first sub-sensing signal output by the first sensor 511 in the first sensor group 51 will simultaneously undergo a second change, and the second sub-sensing signal output by the second sensor 521 in the second sensor group 52 will also simultaneously undergo a second change. If the second edge 20 of the silicon wafer breaks, during the movement of the silicon wafer along the first direction X with the silicon wafer transport stage, while some of the first sub-sensing signals output by the first sensor 511 undergo a second change, some of the first sub-sensing signals output by the first sensor 511 will not change simultaneously; or, while some of the second sub-sensing signals output by the second sensor 521 undergo a second change, some of the second sub-sensing signals output by the second sensor 521 will not change simultaneously.
[0088] Considering the installation error of the first sensor 511 in the first sensor group 51 (i.e., the multiple first sensors 511 do not completely overlap along the second direction Y), and the installation error of the second sensor 521 in the second sensor group 51 (i.e., the multiple second sensors 511 do not completely overlap along the second direction Y), to avoid false detections caused by these installation errors, this embodiment of the invention sets that during the movement of the silicon wafer along the first direction X, if, when a portion of the first sub-sensing signals changes for the second time, a portion of the first sub-sensing signals remain unchanged for more than a third preset time, or when a portion of the second sub-sensing signals changes for the second time, a portion of the second sub-sensing signals remain unchanged for more than a fourth preset time, then the second side 20 is determined to be damaged. It should be noted that this embodiment of the invention does not limit the specific values of the aforementioned third and fourth preset times, and the two can be the same or different; for example, both the third and fourth preset times can be 100ms.
[0089] S240. Determine whether the third and fourth edges of the silicon wafer are damaged based on the third and fourth sensing signals.
[0090] Furthermore, determining whether the first and second edges of the silicon wafer are damaged based on the first and second sensing signals also includes:
[0091] During the movement of the silicon wafer along the first direction, if when a portion of the first sub-sensing signals changes for the first time, a portion of the first sub-sensing signals remain unchanged for a period exceeding a fifth preset time, or when a portion of the second sub-sensing signals changes for the first time, a portion of the second sub-sensing signals remain unchanged for a period exceeding a sixth preset time, then it is determined that the damaged length of the first side in the first direction is greater than a first preset size, wherein the fourth preset time is greater than the first preset time, and the sixth preset time is greater than the second preset time.
[0092] During the movement of the silicon wafer along the first direction, if, when a portion of the first sub-sensing signal changes for the second time, a portion of the first sub-sensing signal remains unchanged for a period exceeding a seventh preset time, or when a portion of the second sub-sensing signal changes for the second time, a portion of the second sub-sensing signal remains unchanged for a period exceeding an eighth preset time, then it is determined that the damaged length of the second side in the first direction is greater than a second preset size, wherein the third preset time is greater than the seventh preset time, and the fourth preset time is greater than the eighth preset time.
[0093] It should be noted that the embodiments of the present invention do not limit the specific values of the fifth, sixth, seventh, and eighth preset times, and they may be the same or different. Those skilled in the art can set them according to the actual situation. It should also be noted that the embodiments of the present invention do not limit the first and second preset dimensions, and they may be the same or different. Those skilled in the art can set them according to the actual situation.
[0094] This invention provides a method to further determine whether the damaged length of the first side in the first direction exceeds a first preset size, and whether the damaged length of the second side in the first direction exceeds a second preset size. This allows staff to more clearly understand the damage status of the first and second sides.
[0095] refer to Figure 2 and Figure 3 The third sensor group 53 includes at least one third sensor 531, and the third sensing signal output by the third sensor group 53 includes at least one third sub-sensing signal. The fourth sensor group 54 includes at least one fourth sensor 541, and the fourth sensing signal output by the fourth sensor group 54 includes at least one fourth sub-sensing signal. Figure 6 This is a flowchart of another fragment detection method provided by an embodiment of the present invention. Figure 6 The illustrated embodiment provides a detailed explanation of how to determine whether the third and fourth edges of a silicon wafer are damaged based on the third and fourth sensing signals. (See reference...) Figure 6 The fragment detection method in this embodiment of the invention includes:
[0096] S310: Receive the first sensing signal output by the first sensor group, the second sensing signal output by the second sensor group, the third sensing signal output by the third sensor group, and the fourth sensing signal output by the fourth sensor group.
[0097] S320. Determine whether the first and second sides of the silicon wafer are damaged based on the first sensing signal and the second sensing signal.
[0098] S330. During the movement of the silicon wafer along the first direction, if the number of changes in the third sub-sensing signal is greater than two or less than two, then the third side is determined to be damaged.
[0099] refer to Figure 1 , Figure 2 and Figure 3 It is understandable that, during the movement of the silicon wafer along the first direction X with the silicon wafer transport stage, if the third edge 30 of the silicon wafer does not break, the third sub-sensing signal output by the third sensor 531 in the third sensor group 53 should change simultaneously and twice. If the third edge 30 of the silicon wafer breaks, there may be instances where the number of changes in the third sub-sensing signal output by the third sensor 531 is not twice (more than twice or less than twice). Therefore, the wafer breakage determination module 60 can determine that the third edge 30 is broken when the number of changes in the received third sub-sensing signal is greater than twice or less than twice.
[0100] S340. During the movement of the silicon wafer along the first direction, if the number of changes in the fourth sub-sensing signal is greater than two or less than two, then the fourth side is determined to be damaged.
[0101] refer to Figure 1 , Figure 2 and Figure 3 It is understandable that during the movement of the silicon wafer along the first direction X with the silicon wafer transport stage, if the fourth side 40 does not break, the fourth sub-sensing signal output by the fourth sensor 541 in the fourth sensor group 54 should change simultaneously and twice. If the fourth side 40 of the silicon wafer breaks, the number of changes in the fourth sub-sensing signal output by the fourth sensor 541 may not be twice (more than twice or less than twice). Therefore, the wafer breakage determination module 60 can determine that the fourth side 40 is broken when the number of changes in the received fourth sub-sensing signal is greater than twice or less than twice.
[0102] In another feasible implementation, refer to Figure 2 and Figure 3 The third sensor group 53 includes at least one third sensor 531, and the third sensing signal output by the third sensor group 53 includes at least one third sub-sensing signal. The fourth sensor group 54 includes at least one fourth sensor 541, and the fourth sensing signal output by the fourth sensor group 54 includes at least one fourth sub-sensing signal. The third sensor 531 and the fourth sensor 541 correspond one-to-one. Along the second direction Y, the third sensor 531 and the fourth sensor 541 overlap. Figure 7 This is a flowchart of another fragment detection method provided by an embodiment of the present invention. Figure 7 The illustrated embodiment provides a detailed explanation of how to determine whether the third and fourth edges of a silicon wafer are damaged based on the third and fourth sensing signals. (See reference...) Figure 7The fragment detection method in this embodiment of the invention includes:
[0103] S410: Receive the first sensing signal output by the first sensor group, the second sensing signal output by the second sensor group, the third sensing signal output by the third sensor group, and the fourth sensing signal output by the fourth sensor group.
[0104] S420. Determine whether the first and second sides of the silicon wafer are damaged based on the first sensing signal and the second sensing signal.
[0105] S430. During the movement of the silicon wafer along the first direction, if there are different corresponding third and fourth sub-sensing signals, it is determined that the third or fourth side is damaged.
[0106] refer to Figure 1 and 2 It is understandable that, with the third sensor 531 and the fourth sensor 541 corresponding one-to-one and overlapping along the second direction Y, the wafer breakage determination module 60 can determine whether the third edge 30 and the fourth edge 40 of the silicon wafer are broken based on whether the received third sub-sensing signal and the fourth sub-sensing signal are the same. Specifically, during the process of the silicon wafer moving along the first direction X with the silicon wafer transport stage, if the third edge 30 and the fourth edge 40 of the silicon wafer are not broken, the first sub-sensing signal output by the first sensor 511 and the second sub-sensing signal output by the second sensor 521 should be the same, that is, both the third sensor 531 and the fourth sensor 541 sense the silicon wafer, or neither senses the silicon wafer. If the third edge 30 or the fourth edge 40 of the silicon wafer is broken, there will be a difference between the first sub-sensing signal output by the first sensor 511 and the second sub-sensing signal output by the second sensor 521, that is, only the third sensor 531 senses the silicon wafer, or only the fourth sensor 541 senses the silicon wafer.
[0107] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.
Claims
1. A device for detecting broken silicon wafers, the silicon wafer including a first side and a second side disposed opposite to each other along a first direction, and a third side and a fourth side disposed opposite to each other along a second direction; the first direction and the second direction intersect; the silicon wafer moves along the first direction with a silicon wafer transfer stage; Its features are, The fragment detection device includes a detection module and a fragment judgment module; The detection module includes a first sensor group, a second sensor group, a third sensor group, and a fourth sensor group; the first sensor group is used to sequentially sense the first side and the second side, the second sensor group is used to sequentially sense the first side and the second side, and the sum of the sensing ranges of the first sensor group and the second sensor group in the second direction is greater than or equal to the side length of the first side; the third sensor group is used to sense the third side; and the fourth sensor group is used to sense the fourth side. The fragment detection module is communicatively connected to the first sensor group, the second sensor group, the third sensor group, and the fourth sensor group, respectively. It is used to receive the first sensing signal output by the first sensor group, the second sensing signal output by the second sensor group, the third sensing signal output by the third sensor group, and the fourth sensing signal output by the fourth sensor group. Based on the first sensing signal and the second sensing signal, it determines whether the first edge and the second edge of the silicon wafer are damaged. Based on the third sensing signal and the fourth sensing signal, it determines whether the third edge and the fourth edge of the silicon wafer are damaged.
2. The fragment detection device according to claim 1, characterized in that, The sensing range of the first sensor group in the second direction is greater than or equal to half the length of the first side; The sensing range of the second sensor group in the second direction is greater than or equal to half the length of the second side.
3. The fragment detection device according to claim 1, characterized in that, The first sensor group includes at least two first sensors arranged along the second direction, and the first sensing signal output by the first sensor group includes at least two first sub-sensing signals; The second sensor group includes at least two second sensors arranged along the second direction, and the second sensing signal output by the second sensor group includes at least two second sub-sensing signals; The third sensor group includes at least one third sensor, and the third sensing signal output by the third sensor group includes at least one third sub-sensing signal; The fourth sensor group includes at least one fourth sensor, and the fourth sensing signal output by the fourth sensor group includes at least one fourth sub-sensing signal.
4. The fragment detection device according to claim 3, characterized in that, The third sensor and the fourth sensor are in one-to-one correspondence; Along the second direction, the third sensor and the fourth sensor overlap.
5. The fragment detection device according to claim 3, characterized in that, The first sensor includes a photoelectric sensor; The second sensor includes a photoelectric sensor; The third sensor includes a photoelectric sensor; The fourth sensor includes a photoelectric sensor.
6. A method for detecting broken silicon wafers, applied to the broken wafer detection apparatus according to any one of claims 1-5, characterized in that, The fragment detection method includes: Receives a first sensing signal output by the first sensor group, a second sensing signal output by the second sensor group, a third sensing signal output by the third sensor group, and a fourth sensing signal output by the fourth sensor group; The first and second edges of the silicon wafer are determined to be damaged based on the first and second sensing signals. The third and fourth edges of the silicon wafer are determined to be damaged based on the third and fourth sensing signals.
7. The fragment detection method according to claim 6, characterized in that, The first sensor group includes at least two first sensors arranged along the second direction, and the first sensing signal output by the first sensor group includes at least two first sub-sensing signals; the second sensor group includes at least two second sensors arranged along the second direction, and the second sensing signal output by the second sensor group includes at least two second sub-sensing signals. Determining whether the first and second edges of the silicon wafer are damaged based on the first sensing signal and the second sensing signal includes: During the movement of the silicon wafer along the first direction, if when a portion of the first sub-sensing signal changes for the first time, a portion of the first sub-sensing signal remains unchanged for a period exceeding a first preset time, or when a portion of the second sub-sensing signal changes for the first time, a portion of the second sub-sensing signal remains unchanged for a period exceeding a second preset time, then the first edge is determined to be damaged. During the movement of the silicon wafer along the first direction, if, during the second change of a portion of the first sub-sensing signal, a portion of the first sub-sensing signal remains unchanged for a period exceeding a third preset time, or during the second change of a portion of the second sub-sensing signal, a portion of the second sub-sensing signal remains unchanged for a period exceeding a fourth preset time, then the second edge is determined to be damaged.
8. The fragment detection method according to claim 7, characterized in that, Determining whether the first and second edges of the silicon wafer are damaged based on the first sensing signal and the second sensing signal further includes: During the movement of the silicon wafer along the first direction, if when a portion of the first sub-sensing signal changes for the first time, a portion of the first sub-sensing signal remains unchanged for a period exceeding a fifth preset time, or when a portion of the second sub-sensing signal changes for the first time, a portion of the second sub-sensing signal remains unchanged for a period exceeding a sixth preset time, then it is determined that the damaged length of the first edge in the first direction is greater than a first preset size, wherein the fourth preset time is greater than the first preset time, and the sixth preset time is greater than the second preset time; During the movement of the silicon wafer along the first direction, if, during the second change of a portion of the first sub-sensing signal, a portion of the first sub-sensing signal remains unchanged for a period exceeding a seventh preset time, or during the second change of a portion of the second sub-sensing signal, a portion of the second sub-sensing signal remains unchanged for a period exceeding an eighth preset time, then it is determined that the damaged length of the second side in the first direction is greater than a second preset size, wherein the third preset time is greater than the seventh preset time, and the fourth preset time is greater than the eighth preset time.
9. The fragment detection method according to claim 6, characterized in that, The third sensor group includes at least one third sensor, and the third sensing signal output by the third sensor group includes at least one third sub-sensing signal; the fourth sensor group includes at least one fourth sensor, and the fourth sensing signal output by the fourth sensor group includes at least one fourth sub-sensing signal. Determining whether the third and fourth edges of the silicon wafer are damaged based on the third and fourth sensing signals includes: If, during the movement of the silicon wafer along the first direction, the number of changes in the third sub-sensing signal is greater than two or less than two, then the third side is determined to be damaged. If, during the movement of the silicon wafer along the first direction, the fourth sub-sensing signal changes more than twice or less than twice, then the fourth side is determined to be damaged.
10. The fragment detection method according to claim 6, characterized in that, The third sensor group includes at least one third sensor, and the third sensing signal output by the third sensor group includes at least one third sub-sensing signal; the fourth sensor group includes at least one fourth sensor, and the fourth sensing signal output by the fourth sensor group includes at least one fourth sub-sensing signal; the third sensor and the fourth sensor correspond one-to-one; along the second direction, the third sensor and the fourth sensor overlap; Determining whether the third and fourth edges of the silicon wafer are damaged based on the third and fourth sensing signals includes: If, during the movement of the silicon wafer along the first direction, there are different corresponding third and fourth sub-sensing signals, then it is determined that the third or fourth side is damaged.
Citation Information
Patent Citations
Substrate breakage detecting device and substrate processing equipment
CN105738383A
Whether on -line monitoring glass substrate device of fragmentation
CN207215730U