Substrate processing method, semiconductor device manufacturing method, recording medium, and substrate processing apparatus

Abstract

The invention relates to a substrate processing method, a semiconductor device manufacturing method, a recording medium, and a substrate processing apparatus. The time required for convergence can be shortened when the temperature distribution in the processing chamber, which varies due to moving the substrate into the processing chamber, converges to the target temperature distribution, and the substrate processing productivity can be improved. The method includes: (a) adjusting the temperature in the processing chamber so that the temperature distribution in the arrangement direction of a plurality of substrates in the processing chamber is a first distribution in which at least a portion of the processing chamber becomes a first temperature; (b) transferring the plurality of substrates into the processing chamber in a state where the temperature distribution is set as a first distribution; (c) after (b), adjusting the temperature in the processing chamber such that the temperature distribution in the processing chamber is a second distribution in which at least a portion of the processing chamber becomes a second temperature different from the first temperature; and (d) after (c), processing the plurality of substrates in a state in which the temperature distribution in the processing chamber is set to a second distribution.

Description

Technical Field

[0001] The present invention relates to a substrate processing method, a method for manufacturing a semiconductor device, a recording medium and a substrate processing apparatus. Background Art

[0002] As one of the steps in the manufacturing process of a semiconductor device, a process of carrying a substrate into a processing chamber is sometimes performed (for example, see Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2016-143745 Summary of the invention

[0006] Problems to be solved by the invention

[0007] By moving the substrate into the processing chamber, the temperature distribution in the processing chamber may change to a temperature distribution different from the temperature distribution (target temperature distribution) used when processing the substrate. In this case, in order to make the changed temperature distribution converge to the target temperature distribution, a temperature control unit such as a heater may be used to control the temperature in the processing chamber, but it may take time to converge to the target temperature distribution.

[0008] The present invention provides a technology capable of shortening the time required to achieve convergence and improving the productivity of substrate processing when the temperature distribution in a processing chamber that changes due to carrying a substrate into the processing chamber converges to a target temperature distribution.

[0009] Means for solving problems

[0010] According to one embodiment of the present invention, there is provided a technique comprising the following steps:

[0011] (a) a step of adjusting the temperature in a processing chamber configured to accommodate a plurality of substrates so that a temperature distribution in an arrangement direction of the plurality of substrates in the processing chamber is set to a first distribution in which at least a portion of the processing chamber has a first temperature;

[0012] (b) carrying the plurality of substrates into the processing chamber while setting the temperature distribution in the arrangement direction within the processing chamber to the first distribution;

[0013] (c) after (b), a step of adjusting the temperature within the processing chamber so that the temperature distribution in the arrangement direction within the processing chamber is set to a second distribution in which at least a portion within the processing chamber has a second temperature different from the first temperature; and

[0014] (d) After (c), a step of processing the plurality of substrates while setting the temperature distribution in the arrangement direction within the processing chamber to the second distribution.

[0015] Effects of the Invention

[0016] According to the present invention, when the temperature distribution in the processing chamber that changes due to the transfer of the substrate into the processing chamber is made to converge to the target temperature distribution, the time required to converge can be shortened, thereby improving the productivity of substrate processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 1 is a schematic diagram of the structure of a vertical processing furnace of a substrate processing apparatus preferably used in one embodiment of the present invention, and shows a processing furnace 202 portion in a longitudinal cross-sectional view.

[0018] Figure 2 1 is a schematic diagram of the configuration of a controller 121 of a substrate processing apparatus preferably used in one embodiment of the present invention, and is a diagram showing a control system of the controller 121 in the form of a block diagram.

[0019] Figure 3 1 is a diagram showing temperature changes in the upper region, the central region, and the lower region in the processing chamber 201 according to one embodiment of the present invention.

[0020] Figure 4 1 is a diagram showing temperature changes in the upper region, the central region, and the lower region of the processing chamber 201 in Modification 1. FIG.

[0021] Figure 5 1 is a diagram showing temperature changes in the upper region, the central region, and the lower region of the processing chamber 201 in Modification 2.

[0022] Description of Reference Numerals

[0023] 200 Wafer (substrate)

[0024] 201 Processing Room

[0025] a 1st distribution

[0026] b Second distribution DETAILED DESCRIPTION

[0027] <One embodiment of the present invention>

[0028] The following mainly refers to Figure 1One embodiment of the present invention is described. It should be noted that the drawings used in the following description are schematic, and the relationship between the dimensions of the elements shown in the drawings, the ratio of the elements, etc. may not be consistent with reality. In addition, the relationship between the dimensions of the elements, the ratio of the elements, etc. may not be consistent between multiple drawings.

[0029] (1) Configuration of substrate processing apparatus

[0030] like Figure 1 As shown, the processing furnace 202 has a heater 206 as a temperature regulating part (heating part). The heater 206 is a cylindrical shape with an upper end and a lower end opened, and is installed vertically. The heater 206 is arranged along the arrangement direction of the wafer 200 as a substrate, and is composed of five area heaters 206a, 206b, 206c, 206d, and 206e from the top. These heaters 206a to 206e are configured to be able to independently control the temperature of their respective areas. The heater 206 also functions as an activation mechanism (excitation part) that activates (excites) the gas by heat. An outer wall part 210 is provided on the outside of the heater 206. The outer wall part 210 includes a side wall part 210a covering the periphery of the heater 206, a top plate part 210b covering the upper part of the heater 206, and a bottom part 210c covering the lower part of the heater 206.

[0031] An exhaust pipe 254 is provided in the outer wall portion 210 so as to penetrate the top plate portion 210b and serve as an exhaust flow path for exhausting the cooling gas (cooling gas flow) flowing between the reaction tube 203 and the outer wall portion 210. A blower 270 serving as a cooling gas exhaust device is connected to the exhaust pipe 254. An exhaust side damper or exhaust side gate for adjusting the exhaust flow rate may be provided on the upstream side of the blower 270 on the exhaust pipe 254.

[0032] In addition, a supply pipe 251 for supplying cooling gas between the reaction tube 203 and the outer wall 210 is provided on the outer wall 210. A supply-side damper 264 is connected to the supply pipe 251 as a cooling gas flow rate regulator for regulating the supply flow rate of the cooling gas. Instead of the supply-side damper 264, or together with the supply-side damper 264, a supply-side gate may be connected to the supply pipe 251. The supply-side damper 264 opens and closes the valve in a state where the blower 270 is operated, thereby enabling the supply and stop of the cooling gas between the reaction tube 203 and the outer wall 210. Moreover, the supply-side damper 264 is configured to adjust the flow rate of the cooling gas supplied between the reaction tube 203 and the outer wall 210 by adjusting the opening degree in a state where the blower 270 is operated. In addition, the flow rate of the cooling gas may also be adjusted by adjusting the rotation speed of the blower 270.

[0033] The cooling gas exhaust section is mainly composed of the exhaust pipe 254 and the blower 270. In addition, the cooling gas supply section is mainly composed of the supply pipe 251 and the supply-side throttle valve 264. In addition, the processing chamber cooling section (processing chamber cooling system) as a cooling device is mainly composed of the cooling gas exhaust section and the cooling gas supply section. In addition, in the cooling gas flow regulating section, in addition to the supply-side throttle valve 264, a blower 270 capable of controlling the rotation speed may be included. The cooling gas flow (cooling gas) taken in from the supply pipe 251 may be, for example, the atmosphere, or an inert gas (such as nitrogen or a rare gas) supplied from an inert gas supply source not shown in the figure.

[0034] On the inner side of the heater 206, a reaction tube 203 is arranged concentrically with the heater 206. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), and is formed into a cylindrical shape with a closed upper end and an open lower end. Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. The manifold 209 is made of a metal material such as stainless steel (SUS), and is formed into a cylindrical shape with an upper end and a lower end open. The upper end of the manifold 209 is engaged with the bottom 210c of the outer wall portion 210, and is configured to support the bottom 210c. The reaction tube 203 is installed vertically in the same manner as the heater 206. The processing container (reaction container) is mainly composed of the reaction tube 203 and the manifold 209. A processing chamber 201 is formed in the hollow portion of the cylinder of the processing container. The processing chamber 201 is configured to accommodate a wafer 200. A wafer 200 is processed in the processing chamber 201 .

[0035] In the processing chamber 201, a nozzle 249 as a gas introduction part is provided in a manner penetrating the side wall of the manifold 209. A gas supply pipe (not shown) is connected to the nozzle 249. On the opposite side of the gas supply pipe to the connection side of the nozzle 249, that is, on the upstream side, a processing gas supply source (not shown) is connected via an MFC (mass flow controller) (not shown) as a gas flow controller. In addition, an opening and closing valve (for example, an air valve) (not shown) is provided on at least one of the upstream side and the downstream side of the MFC.

[0036] An exhaust pipe 231 for exhausting the atmosphere of the processing chamber 201 is provided on the manifold 209. A vacuum pump 246 as a vacuum exhaust device is connected to the exhaust pipe 231 via a pressure sensor (not shown) as a pressure detector for detecting the pressure in the processing chamber 201 and an APC valve 244 as a pressure regulator. The APC valve 244 is configured to open and close the valve while the vacuum pump 246 is in operation, thereby enabling vacuum exhaust and vacuum exhaust stop in the processing chamber 201. Furthermore, the valve opening is adjusted based on pressure information detected by the pressure sensor while the vacuum pump 246 is in operation, thereby enabling the pressure in the processing chamber 201 to be adjusted. The exhaust system is mainly composed of the exhaust pipe 231, the APC valve 244, and the pressure sensor. The vacuum pump 246 may also be included in the exhaust system.

[0037] A sealing cover 219 as a furnace port cover body that can hermetically seal the lower end opening of the manifold 209 is provided below the manifold 209. The sealing cover 219 is made of a metal material such as SUS and is formed in a disc shape. The sealing cover 219 is configured to be raised and lowered in the vertical direction by a wafer boat elevator 115 that is provided outside the reaction tube 203 and is a lifting mechanism for a wafer boat 217 described later. The wafer boat elevator 115 is configured as a conveying device (conveying mechanism) that moves the wafer 200 into and out of the processing chamber 201 by raising and lowering the sealing cover 219.

[0038] It should be noted that the area corresponding to the heater 206a in the processing container (the closed end side of the reaction tube 203) is sometimes referred to as the upper area. Sometimes, the area corresponding to the heater 206b in the processing container is also considered to be included in the upper area. In addition, sometimes, the area corresponding to the heater 206e in the processing container is referred to as the lower area. Sometimes, it is also considered to include the area below the heater 206e in the processing container, such as the manifold 209, the opening of the reaction tube 203, etc., in the lower area. Sometimes, it is also considered to include the area corresponding to the heater 206d in the processing container in the lower area. In addition, sometimes, the area corresponding to the heater 206c in the processing container is referred to as the central area. Sometimes, it is also considered to include the area corresponding to at least one of the heater 206b and the heater 206d in the processing container in the central area.

[0039] The wafer boat 217 as a substrate conveying mechanism is configured to support a plurality of wafers 200, for example 25 to 200, in a horizontal posture and in a state where the centers are aligned with each other in the vertical direction and arranged in multiple layers, that is, arranged at intervals. The wafer boat 217 is made of, for example, a heat-resistant material such as quartz or SiC. In the lower part of the wafer boat 217, a heat insulation plate 218 made of, for example, a heat-resistant material such as quartz or SiC is supported in multiple layers. It should be noted that the expression of a numerical range such as "25 to 200 sheets" in this specification means that the lower limit and the upper limit are included in the range. Therefore, for example, "25 to 200 sheets" means "more than 25 sheets and less than 200 sheets". The same is true for other numerical ranges.

[0040] A temperature sensor 263 as a temperature detector is provided in the reaction tube 203. Based on the temperature information detected by the temperature sensor 263, the power supply to each of the five heaters 206a to 206e of the heater 206 is independently adjusted, so that the temperature in the processing chamber 201 becomes a desired temperature distribution. The temperature sensor 263 is provided along the inner wall of the reaction tube 203.

[0041] like Figure 2 As shown, the controller 121 as a control unit (control unit) is configured as a computer having a CPU (Central Processing Unit; Central Processing Unit) 121a, a RAM (Random Access Memory; Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. RAM121b, a storage device 121c, and an I / O port 121d are configured to be able to exchange data with the CPU121a via an internal bus 121e. An input and output device 122 such as a touch panel is connected to the controller 121. In addition, an external storage device 123 can be connected to the controller 121. It should be noted that the substrate processing device can be configured to have one control unit or multiple control units. That is, one control unit can be used to control the processing sequence described later, or multiple control units can be used to control the processing sequence described later. In addition, multiple control units can be configured as a control system interconnected by a wired or wireless communication network, or the control system as a whole can be used to control the processing sequence described later. When the term "control unit" is used in this specification, it may include not only one control unit but also a plurality of control units or a control system including a plurality of control units.

[0042] The storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), an SSD (Solid State Drive), etc. A control program for controlling the actions of the substrate processing device, a process recipe recording the steps and conditions of the substrate processing described later, etc. are recorded and stored in a readable manner in the storage device 121c. The process recipe is a combination of the controller 121 so that the substrate processing device performs the steps of the substrate processing described later and can obtain the specified results, and functions as a program. Hereinafter, the process recipe, the control program, etc. are collectively referred to as a program. In addition, the process recipe is also referred to as a process. When the term program is used in this specification, sometimes only the process is included alone, sometimes only the control program is included alone, or sometimes both are included. RAM121b is configured as a memory area (working area) for temporarily holding programs, data, etc. read by CPU121a.

[0043] The I / O port 121d is connected to the above-mentioned MFC, valve, pressure sensor, APC valve 244, vacuum pump 246, heater 206, temperature sensor 263, supply-side damper 264, blower 270, boat elevator 115, and the like.

[0044] The CPU 121a is configured to read the control program from the storage device 121c and execute it, and can read the process from the storage device 121c according to the input of the operation command from the input / output device 122. The CPU 121a is configured to control the flow rate adjustment action of various substances (various gases) based on the MFC, the opening and closing action of the valve, the opening and closing action of the APC valve 244 and the pressure adjustment action using the APC valve 244 based on the pressure sensor, the start and stop of the vacuum pump 246, the temperature adjustment action of the heater 206 based on the temperature sensor 263, the opening and closing control of the supply side throttle valve 264, the start, stop and speed adjustment of the blower 270, the lifting action of the wafer boat 217 based on the wafer boat elevator 115, etc. according to the content of the read process.

[0045] The controller 121 can be constructed by installing the above-mentioned program recorded and stored in the external storage device 123 into the computer. The external storage device 123 includes, for example, a disk such as an HDD, an optical disk such as a CD, an optical disk such as an MO, a semiconductor memory such as a USB memory, an SSD, etc. The storage device 121c and the external storage device 123 are configured as a computer-readable recording medium. Hereinafter, they are collectively referred to as recording media. When a recording medium is used in this specification, sometimes only the storage device 121c is included alone, sometimes only the external storage device 123 is included alone, or sometimes both are included. It should be noted that it is also possible to provide the program to the computer using a communication unit such as the Internet or a dedicated line instead of using the external storage device 123.

[0046] (2) Substrate processing step

[0047] Main Use Figure 3 An example of substrate processing performed as one step of a semiconductor device manufacturing process using the substrate processing apparatus will be described. In the following description, the operations of the various components constituting the substrate processing apparatus are controlled by the controller 121 .

[0048] The substrate processing in this method includes the following steps:

[0049] (a) step A of adjusting the temperature in the processing chamber 201 so that the temperature distribution in the arrangement direction of the plurality of wafers 200 in the processing chamber 201 configured to accommodate the plurality of wafers 200 is set to a first distribution in which at least a portion of the processing chamber 201 has a first temperature;

[0050] (b) Step B of carrying a plurality of wafers 200 into the processing chamber 201 while setting the temperature distribution in the arrangement direction of the processing chamber 201 to the first distribution;

[0051] (c) after step B, step C of adjusting the temperature in the processing chamber 201 in such a manner that the temperature distribution in the arrangement direction of the plurality of wafers 200 in the processing chamber 201 is set to a second distribution in which at least a portion of the processing chamber 201 has a second temperature different from the first temperature; and

[0052] (d) After step C, step D of processing the plurality of wafers 200 in a state where the temperature distribution in the arrangement direction of the plurality of wafers 200 in the processing chamber 201 is set to the second distribution.

[0053] (Step A: First Temperature Adjustment Step)

[0054] In step A, the temperature in the processing chamber 201 is adjusted to a predetermined temperature.

[0055] Below, use Figure 3 Provide specific instructions. Figure 3 The temperature in the processing chamber 201 at a predetermined time is shown for each of the upper region, the central region, and the lower region. Figure 3 The vertical axis shows the temperature of each region in the processing chamber 201 in [° C.]. Figure 3 The horizontal axis shows the elapsed time in [h] (hours). Figure 3 The dotted line in shows the temperature of the lower region in the processing chamber 201. The dashed line shows the temperature of the central region in the processing chamber 201. The solid line shows the temperature of the upper region in the processing chamber 201. Figure 3 The arrow i above indicates the time point at which the temperature in the processing chamber 201 becomes a predetermined distribution (first distribution) by temperature regulation in step A, and indicates the time point at which the substrate processing apparatus becomes an idle state described later. The arrow ii indicates the time point at which the substrate processing apparatus becomes a standby state described later. The arrow iii indicates the start time point of step B described later. The arrow iv indicates the start time point of the pressure regulation process described later. The arrows v and vi respectively indicate the start time point and the end time point of the processing chamber cooling process in step C described later. The arrow vii indicates the start time point of step D described later.

[0056] In step A, while the substrate processing apparatus is in a standby state (idle state) until it is switched to a standby state, the temperature distribution in the arrangement direction of the plurality of wafers 200 in the processing chamber 201 is set to a first distribution (see FIG. 1 ) in which at least a portion (e.g., a lower region) in the processing chamber 201 is set to a first temperature (e.g., 100° C.). Figure 3 In more detail, the set temperatures of the heaters 206a to 206e are adjusted so that the temperatures of the upper region, the central region, and the lower region are set to, for example, 92° C., 96° C., and 100° C., respectively (see Figure 3 Arrow i). At this time, in such a way that the temperature distribution in the processing chamber 201 is formed, the power supply condition of the heater 206 is feedback-controlled based on the temperature information detected by the temperature sensor 263. As a result, 100°C as the temperature of the lower area becomes the maximum value of the temperature in the first distribution (the first temperature), and 92°C as the temperature of the upper area becomes the minimum value of the temperature in the first distribution. In this method, for example, the first distribution has a first deviation, that is, a temperature range of 100°C-92°C=8°C. It should be noted that as the temperature of each area in the processing chamber 201 adjusted in this step and step C, the temperature detected by the temperature sensor 263 provided in each area can be used.

[0057] It should be noted that it is not necessary to turn on all the heaters 206a~206e during the entire period of this step. The temperature in the processing chamber 201 can be adjusted by turning off at least one of the heaters 206a~206e and turning on the other multiple heaters during at least a part of the period.

[0058] (Step B: Wafer loading process)

[0059] Then, if the substrate processing apparatus receives an instruction to execute step B and enters a standby state (see Figure 3 ii), the lower end opening of the manifold 209 is opened, as shown in FIG. Figure 1 As shown, the boat 217 supporting a plurality of wafers 200 is lifted by the boat elevator 115 and carried into the processing chamber 201 (boat loading). In this state, the sealing cap 219 seals the lower end of the manifold 209. In this way, the wafers 200 are carried (supplied) into the processing chamber 201.

[0060] At this time, in this method, the wafers 200 are loaded into the processing chamber 201 while the temperature distribution in the arrangement direction of the plurality of wafers 200 in the processing chamber 201 is set to the first distribution described above (see Figure 3 In this step, the wafer boat 217 disposed outside the substrate processing apparatus and having a lower temperature than the temperature in the processing chamber 201 when it is brought into the substrate processing apparatus is brought into the substrate processing apparatus, so that the temperature in the processing chamber 201 is reduced to about 80° C. (see Figure 3 ).

[0061] (Step C: Second Temperature Adjustment Step)

[0062] When the substrate processing apparatus enters the standby state, the temperature adjustment in the processing chamber 201 is started as the second temperature adjustment process. Specifically, the temperature distribution in the arrangement direction of the plurality of wafers 200 in the processing chamber 201 is set to a second distribution (target temperature distribution, see Figure 3The set temperatures of heaters 206a to 206e are adjusted in the manner b) shown in the figure. For example, the set temperatures of heaters 206a to 206e are adjusted in such a manner that the temperature of any of the upper region, the central region, and the lower region is 60°C. That is, in this manner, the maximum and minimum values ​​of the temperature in the second distribution are 60°C, and the second deviation (temperature range) of the second distribution is 0°C. However, even if the set temperature of heater 206 is adjusted (changed) in this way, the temperature in processing chamber 201 will not drop immediately, and will be substantially maintained at the temperature in the standby state (about 100°C) for at least the specified time until the start of step B (see Figure 3 ).

[0063] As for the temperature adjustment by the heater 206 as the second temperature adjustment process, the set temperature of the heater 206 adjusted so that the temperature distribution in the processing chamber 201 becomes the second distribution is continuously executed even after the start of step B until the end of step D. It should be noted that the start time point of the second temperature adjustment process is not limited to before the start of step B (when the process enters the standby state), but may be simultaneously with the start of step B or any time point during the period from the end of step B to the start of step D.

[0064] In this method, as a second temperature adjustment step, the processing chamber 201 is further cooled by the processing chamber cooling unit in such a manner that the temperature distribution in the processing chamber 201 approaches the second distribution (processing chamber cooling step). Specifically, the temperature in the processing chamber 201 is lowered by circulating the cooling gas exhausted by the blower 270 through the supply pipe 251 in the space between the reaction tube 203 and the outer wall portion 210 (the peripheral space of the processing chamber 201). At this time, the flow rate of the cooling gas exhausted by the blower 270 is adjusted in such a manner that the temperature in the processing chamber 201 approaches the second distribution (see Figure 3 The flow rate of the cooling gas is adjusted by adjusting at least one of the opening of the supply-side damper 264 and the rotation speed of the blower 270. The cooling gas supplied between the reaction tube 203 and the outer wall 210 is exhausted through the exhaust pipe 254.

[0065] In this method, during the period from the time point of arrow v to the time point of vi, as the second temperature adjustment process, by using the temperature control using the heater 206 and the temperature control using the blower 270 (cooling device) together, the time to converge to the first distribution can be shortened when the first temperature is higher than the second temperature. In addition, the accuracy of the temperature control based on the heater 206 can be improved even in the low temperature region, so the time until the temperature converges to the second distribution can be shortened. This is because, in the low temperature region, it is sometimes difficult to perform temperature control with high accuracy only by power control of the heater 206. As in this method, by cooling the heater 206 while performing power control of the heater 206, temperature control can be performed with high accuracy by power control of the heater 206 even in the low temperature region.

[0066] (Pressure adjustment process)

[0067] After step B is completed, vacuum pump 246 is used to perform vacuum exhaust (decompression exhaust) so that the space in processing chamber 201, that is, the space where wafer 200 is located, becomes the desired pressure (vacuum degree) (see Figure 3 At this time, the pressure in the processing chamber 201 is measured by the pressure sensor, and the APC valve 244 is feedback-controlled based on the measured pressure information. The exhaust in the processing chamber 201 is continuously performed at least until the processing of the wafer 200 is started.

[0068] (Step D: Substrate Treatment Process)

[0069] After the temperature in the processing chamber 201 is adjusted to have the second distribution in step C, the plurality of wafers 200 carried into the processing chamber 201 are processed. As an example, a predetermined raw material gas, a reaction gas, and an inert gas are supplied to the wafers 200 in the processing chamber 201 to form a desired film on the wafers 200.

[0070] That is, in this embodiment, the wafers 200 are processed in a state where the temperature distribution in the arrangement direction of the plurality of wafers 200 in the processing chamber 201 is set to the second distribution.

[0071] (Post-purge and atmospheric pressure recovery)

[0072] After step D is completed, an inert gas is supplied from the nozzle into the processing chamber 201 as a purge gas, and the gas is exhausted through the exhaust pipe 231. Thus, the processing chamber 201 is purged, and the gas, reaction by-products, etc. remaining in the processing chamber 201 are removed from the processing chamber 201 (post-purge). Then, the atmosphere in the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 201 is restored to normal pressure (atmospheric pressure recovery).

[0073] (Wafer boat unloading and wafer removal)

[0074] After that, the sealing cover 219 is lowered by the wafer boat elevator 115, and the lower end of the manifold 209 is opened. Then, the processed wafer 200 is carried out from the lower end of the manifold 209 to the outside of the reaction tube 203 while being supported on the wafer boat 217 (wafer boat unloading). After the wafer boat is unloaded, the lower end opening of the manifold 209 is sealed (gate closed). After being carried out to the outside of the reaction tube 203, the processed wafer 200 is taken out from the wafer boat 217 (wafer removal).

[0075] (Step A': First Temperature Adjustment Step)

[0076] If the substrate processing apparatus enters the idle state again after the wafer boat is unloaded and the gate is closed, the heater 206 is controlled to adjust the temperature in the processing chamber 201 so that the temperature distribution in the processing chamber 201 is set to the first distribution.

[0077] (3) Effects of this method

[0078] According to this aspect, one or more of the following effects can be obtained.

[0079] (a) In step A, the temperature distribution in the processing chamber 201 is adjusted to be a first temperature distribution different from the second distribution (target temperature distribution) used in step D, and in step B, the wafer 200 is carried into the processing chamber 201 with the temperature distribution set to the first distribution. Further, in step C, the temperature is adjusted to be a second temperature distribution, and in step D, the wafer 200 is processed with the temperature distribution set to the second distribution. Thus, when the temperature distribution in the processing chamber 201 that changes due to the wafer 200 being carried into the processing chamber 201 is converged to the second distribution as the target temperature distribution, the time taken to reach convergence can be shortened, thereby improving the productivity of substrate processing. This will be described below.

[0080] When performing step B, the low-temperature wafer boat 217 waiting outside the processing chamber 201 is moved into the processing chamber 201, so the temperature in the processing chamber 201 decreases. At this time, since the wafer boat 217 is lifted from the opening side of the reaction tube 203 to the closed end side, for example, the upper part of the wafer boat 217 heated by all the heaters in the order of heaters 206e, 206d, 206c, and 206b is arranged in the upper area. For example, the central part of the wafer boat 217 heated by three heaters in the order of heaters 206e and 206d is arranged in the central area. For example, the lower part of the wafer boat 217 heated only by heater 206e or hardly heated by heater 206 is arranged in the lower area. In this way, in the processing chamber 201, parts of the wafer boat 217 with different heating times based on heater 206 when loading the wafer boat are arranged according to their areas. Therefore, the temperature in the processing chamber 201 after the wafer boat 217 is moved in has a tendency to vary according to the region. Specifically, the temperature in the upper region is the highest, and the temperature becomes lower as the central region and the lower region move downward. Furthermore, since the wafer boat loading in step B is performed in a state where the lower end opening of the manifold 209 is open, the low-temperature air outside the substrate processing device flows into the substrate processing device, causing the temperature in the processing chamber 201 to decrease. The lower region close to the lower end opening of the manifold 209 is most susceptible to the temperature drop, and is less susceptible to the temperature drop as the central region and the upper region move upward. The lower region starts to drop in temperature immediately after the wafer boat loading starts, and then starts to drop in temperature in the central region and the upper region in that order. That is, the way the temperature changes with respect to the time after the wafer boat loading starts (i.e., the characteristics of the temperature change) differs according to each region. In addition, the temperature drop in the lower region is the largest, and the temperature drop becomes smaller as the central region and the upper region move upward. This makes the tendency of the temperature in the processing chamber 201 to deviate depending on the region more prominent when executing step B. Thus, if the temperature distribution in the processing chamber 201 deviates greatly when executing step B, the time required to eliminate the deviation, that is, the time (convergence time) until the temperature distribution in the processing chamber 201 converges to the second distribution (target temperature distribution) becomes longer. As a result, the start of step D is delayed, and thus productivity may be reduced.

[0081] In this method, in consideration of the temperature variation in the processing chamber 201 generated when executing step B, the temperature distribution in the processing chamber 201 is adjusted in step A so as to become a first distribution different from a second distribution as a target temperature distribution. Thus, the time until the temperature distribution in step C converges to the second distribution can be shortened. As a result, the start of step D can be advanced, thereby avoiding a decrease in productivity.

[0082] (b) By making the first temperature of the first distribution in step A higher than the second temperature of the second distribution in step C, the temperature adjustment (temperature control) by the heater 206 can be easily performed, and the time until convergence to the second distribution (target temperature distribution) can be shortened. In addition, by maintaining the processing chamber 201 at a high temperature before performing step B of loading the wafer 200, the moisture in the processing chamber 201 can be removed, and the influence of the moisture in the processing chamber 201 when performing step D can be reduced.

[0083] (c) By making the minimum temperature value in the first distribution higher than the maximum temperature value in the second distribution, the controllability of the temperature adjustment by the heater 206 in step A can be improved. This makes it easier to further shorten the time until the temperature distribution in the processing chamber 201 converges to the second distribution.

[0084] (d) In step A, the heater 206 is controlled so that the first distribution has a first deviation. In this way, by giving a predetermined deviation (temperature range) to the first distribution in advance in step A, the temperature deviation (temperature deviation based on the region) in the arrangement direction of the wafers 200 generated when the wafers 200 are carried into the processing chamber 201 can be reduced.

[0085] (e) In step C, the temperature in the processing chamber 201 is adjusted so that the second distribution becomes uniform (the second deviation is zero) in the arrangement direction of the wafers 200. In this way, by reducing the temperature deviation (temperature deviation) in the processing chamber 201 generated when the wafers 200 are loaded into the processing chamber 201, when the temperature is controlled so as to achieve the second distribution with the second deviation being zero, the convergence time can be shortened.

[0086] (f) The first distribution is set so that the time from the start of step B until the temperature distribution in the processing chamber 201 converges to the second distribution is shorter than the case where the temperature in the processing chamber 201 is adjusted so that the temperature distribution in the processing chamber 201 becomes the second distribution in step A. Thus, the convergence time can be shortened, and thus the productivity can be improved.

[0087] (g) The first distribution is set so that the maximum value of the deviation of the temperature distribution in the processing chamber 201 generated after step B becomes smaller than the case where the temperature in the processing chamber 201 is adjusted so that the temperature distribution in the processing chamber 201 is set to the second distribution in step A. This can shorten the convergence time and thus improve productivity.

[0088] (h) The first distribution is set based on the characteristics of the change in the temperature distribution in the processing chamber 201 caused by the introduction of the chip 200 in step B. Specifically, as described above, with respect to the effect of the temperature drop in the processing chamber 201 caused by the introduction of the chip 200, the lower region (the open side of the reaction tube 203) is most easily affected, while the central region and the upper region (the closed end side of the reaction tube 203) are less likely to be affected as they move upward. Taking this characteristic into consideration, in the present method, the first distribution is set, which has a deviation for eliminating (compensating for) the temperature deviation generated when the chip 200 is introduced. In detail, the temperature of the lower region is set to the maximum value in the first distribution, and the temperature of the upper region is set to the minimum value in the first distribution (see Figure 3 ). As a result, the convergence time can be further shortened and the productivity can be further improved.

[0089] (i) The above-mentioned effects can be reliably obtained by controlling the heater 206 for heating the processing chamber 201 in step A and controlling the heater 206 and the blower 270 for cooling the processing chamber 201 in step C to adjust the temperature of the processing chamber 201.

[0090] (4) Modification

[0091] The substrate processing in this embodiment can be changed as shown in the following modified examples. These modified examples can be combined arbitrarily. Unless otherwise specified, the processing steps and processing conditions in each step of each modified example can be the same as the processing steps and processing conditions in each step of the above-mentioned substrate processing.

[0092] (Variant 1)

[0093] like Figure 4 As shown, in step A, it is also possible not to pre-distribute the first distribution (see Figure 4 c) provides a deviation (first deviation) such as to eliminate the temperature deviation (temperature deviation) generated when the wafer 200 is loaded. In other words, when the substrate processing apparatus is in an idle state, the temperature distribution in the processing chamber 201 may be set to a first distribution in which any of the upper region, the central region, and the lower region is at the first temperature (e.g., about 100° C.) (see Figure 4 That is, when the substrate processing apparatus is in an idle state, the heating may be performed uniformly so that any area in the processing chamber 201 has substantially the same temperature (see Figure 4 ).

[0094] Figure 4 The graph shows the temperature in the process chamber 201 at a predetermined time point for each of the upper region, the central region, and the lower region. Figure 4The vertical axis shows the temperature of each region in the processing chamber 201 in [° C.]. Figure 4 The horizontal axis shows the elapsed time in [h]. Figure 4 The dotted line in shows the temperature of the lower region in the processing chamber 201. The dashed line shows the temperature of the central region in the processing chamber 201. The solid line shows the temperature of the upper region in the processing chamber 201. Figure 4 The arrow i above indicates the time point when the temperature in the processing chamber 201 becomes the specified distribution (first distribution) by the temperature adjustment of step A, and indicates the time point when the substrate processing device becomes idle. The arrow ii indicates the time point when the substrate processing device becomes standby. The arrow iii indicates the start time point of step B. The arrow iv indicates the start time point of the pressure adjustment process. The arrows v and vi respectively indicate the start time point and the end time point of the processing chamber cooling process of step C. The arrow vii indicates the start time point of step D.

[0095] In this modification, the wafer 200 is carried in at a temperature higher than the temperature range in the substrate processing step (see Figure 4 As shown in arrows iii and vii), the temperature controllability is good compared to the case where the wafer 200 is carried in at a temperature range in the substrate processing step, so the convergence time can be shortened.

[0096] (Variant 2)

[0097] like Figure 5 As shown, in step A, the temperature distribution in the processing chamber 201 may be set to be the same as the target temperature distribution (the second distribution, see Figure 5 f) The first distribution in the same temperature range (about 75°C) (see Figure 5 In other words, when the substrate processing apparatus is in an idle state, the temperature distribution in the processing chamber 201 may be set to a first distribution in which any of the upper region, the central region, and the lower region has a relatively low temperature similar to the temperature region (about 75° C.) in the substrate processing step (see Figure 5 In this way, when the substrate processing apparatus is in an idle state, the temperature distribution in the processing chamber 201 may be set to the first distribution which is lower in temperature than the above-mentioned method. For example, the minimum temperature in the first distribution may be lower than the maximum temperature in the second distribution (see Figure 5 ).

[0098] Figure 5 The temperature in the processing chamber 201 at a predetermined time point is shown for each of the upper region, the central region, and the lower region. Figure 5 The vertical axis shows the temperature of each region in the processing chamber 201 in [° C.]. Figure 5 The horizontal axis shows the elapsed time in [h]. Figure 5 The dotted line in shows the temperature of the lower region in the processing chamber 201. The dashed line shows the temperature of the central region in the processing chamber 201. The solid line shows the temperature of the upper region in the processing chamber 201. Figure 5 The arrow i above indicates the time point when the temperature in the processing chamber 201 becomes the specified distribution (first distribution) by the temperature adjustment of step A, and indicates the time point when the substrate processing device becomes idle. The arrow ii indicates the time point when the substrate processing device becomes standby. The arrow iii indicates the start time point of step B. The arrow iv indicates the start time point of the pressure adjustment process. The arrows v and vi respectively indicate the start time point and the end time point of the processing chamber cooling process of step C. The arrow vii indicates the start time point of step D.

[0099] In this modification, in step A, the wafer 200 is loaded by providing a deviation in advance to the first distribution for eliminating the temperature deviation (temperature deviation) generated when the wafer 200 is loaded (see Figure 5 As shown in arrow i), the convergence time can be shortened compared to the case where the wafer 200 is carried in without giving the deviation to the first distribution.

[0100] <Other aspects of the present invention>

[0101] The embodiments of the present invention have been specifically described above. However, the present invention is not limited to the embodiments described above, and various modifications can be made without departing from the gist of the present invention.

[0102] For example, in the above-mentioned method, the case where the temperature in the treatment chamber 201 is adjusted using the heater 206 in step A is described as an example. However, the present invention is not limited to this method. For example, the temperature in the treatment chamber 201 can also be adjusted by using the heater 206 and the blower 270 at the same time during at least a portion of step A. In this method, the same effect as the above-mentioned method can be obtained. In addition, in this method, further, even in the low temperature region, sufficient temperature deviation (the amplitude that can be tilted and controlled) can be given in advance. This is because, in the case of only the power control of the heater 206, the temperature control in the direction of cooling cannot be performed, so it is sometimes difficult to perform temperature control that locally gives a temperature difference, especially in the low temperature region. As in this method, by using the blower 270 at the same time, the power control of the heater 206 is performed while cooling the reaction tube 203 (treatment chamber 201) and the heater 206, thereby, even in the low temperature region, the temperature control that locally gives a temperature difference by the power control of the heater 206 becomes easy, and sufficient temperature deviation can be given.

[0103] For example, in the above-mentioned method, the case where the temperature in the processing chamber 201 is adjusted by using the heater 206 and the blower 270 simultaneously during at least a portion of step C is described as an example. However, the present invention is not limited to this method. For example, the temperature in the processing chamber 201 can also be adjusted by using only the blower 270 during at least a portion of step C. That is, the power supply to the heater 206 can also be stopped (becomes OFF state) during at least a portion of step C. In this case, for example, the temperature control using the heater 206 can also be started or started again at a time point when the temperature of any area in the processing chamber 201 drops below a specified temperature. In this method, the same effect as the above-mentioned method can also be obtained.

[0104] For example, in the above-mentioned method, an example is given in which the temperature in the processing chamber 201 is adjusted in a manner that the second distribution becomes uniform in the arrangement direction of the wafer 200 (the second deviation is zero) in step C. However, the present invention is not limited to these methods. For example, the second distribution may also have a second deviation other than zero that is smaller than the first deviation. In this method, the same effect as in the above-mentioned method can also be obtained.

[0105] In the above-mentioned method, although not particularly described, when the first temperature is set (controlled) to be higher than the second temperature, after step D, step E of raising the temperature in the processing chamber 201 and step F of unloading the plurality of wafers 200 from the processing chamber 201 may be further performed in a state where the plurality of wafers 200 are accommodated in the processing chamber 201. In this method, the same effects as those in the above-mentioned method can be obtained. In addition, in this method, the wafer 200 can be unloaded from the processing chamber 201 after the moisture generated in the process of step D is removed from the wafer 200 and the processing chamber 201. In addition, the time required for raising the temperature in the processing chamber 201 after the wafer 200 is unloaded can be shortened.

[0106] For example, in the above-mentioned method, the case where the cooling by the blower 270 is started after the vacuum exhaust in the processing chamber 201 is performed is described as an example. However, the present invention is not limited to this method. For example, the cooling by the blower 270 may also be started before the vacuum exhaust in the processing chamber 201 is completed. In this method, the same effect as the above-mentioned method can also be obtained.

[0107] For example, in the above-mentioned method, the cooling gas taken in through the supply pipe 251 is circulated in the peripheral space of the processing chamber 201 and then discharged by the blower 270, thereby reducing the temperature in the processing chamber 201. However, the present invention is not limited to this method. For example, the circulation direction of the cooling gas can also be opposite to the above-mentioned method. That is, the cooling gas taken in through the exhaust pipe 254 can also be circulated in the peripheral space of the processing chamber 201, and then discharged by using the blower provided on the side of the supply pipe 241 to reduce the temperature in the processing chamber 201. In this method, the same effect as the above-mentioned method can also be obtained.

[0108] The process for each treatment is preferably prepared in advance according to the treatment content, recorded and stored in the storage device 121c via the electric communication line and the external storage device 123. In addition, when starting each treatment, it is preferred that the CPU 121a appropriately selects an appropriate process from the multiple processes recorded and stored in the storage device 121c according to the treatment content. In this way, films of various film types, composition ratios, film qualities, and film thicknesses can be formed with good reproducibility using one substrate processing device. In addition, the burden on the operator can be reduced, and each treatment can be started quickly while avoiding operational errors.

[0109] The above-mentioned process is not limited to the case of new preparation, and can also be prepared by, for example, changing an existing process already installed in a substrate processing device. In the case of changing the process, the changed process can also be installed in the substrate processing device via an electrical communication line or a recording medium recording the process. In addition, the input / output device 122 of the existing substrate processing device can be operated to directly change the existing process already installed in the substrate processing device.

[0110] In the above-mentioned method, an example of forming a film using a batch-type substrate processing device that processes a plurality of substrates at a time is described. The present invention is not limited to the above-mentioned method, and for example, it can also be appropriately applied to a case where a film is formed using a single-sheet substrate processing device that processes one or more substrates at a time. In addition, in the above-mentioned method, an example of forming a film using a substrate processing device having a hot-wall type processing furnace is described. The present invention is not limited to the above-mentioned method, and it can also be appropriately applied to a case where a film is formed using a substrate processing device having a cold-wall type processing furnace.

[0111] When these substrate processing apparatuses are used, each process can be performed by the same process steps and process conditions as those of the above-mentioned embodiments and modified examples, and the same effects as those of the above-mentioned embodiments and modified examples can be obtained.

[0112] The above-mentioned aspects and modifications can be used in combination as appropriate. The processing steps and processing conditions at this time can be, for example, the same as those of the above-mentioned aspects and modifications.

Claims

1. A substrate processing method, comprising the following steps: (a) a step of adjusting the temperature in a processing chamber configured to accommodate a plurality of substrates so that a temperature distribution in an arrangement direction of the plurality of substrates in the processing chamber is set to a first distribution in which at least a portion of the processing chamber has a first temperature; (b) carrying the plurality of substrates into the processing chamber while setting the temperature distribution in the arrangement direction within the processing chamber to the first distribution; (c) after (b), a step of adjusting the temperature within the processing chamber so that the temperature distribution in the arrangement direction within the processing chamber is set to a second distribution in which at least a portion within the processing chamber has a second temperature different from the first temperature; and (d) After (c), a step of processing the plurality of substrates while setting the temperature distribution in the arrangement direction within the processing chamber to the second distribution.

2. The substrate processing method according to claim 1, wherein: The first temperature is higher than the second temperature.

3. The substrate processing method according to claim 2, wherein: The minimum temperature value in the first distribution is higher than the maximum temperature value in the second distribution.

4. The substrate processing method according to claim 2, wherein: A minimum temperature value in the first distribution is lower than a maximum temperature value in the second distribution.

5. The substrate processing method according to claim 1, wherein: In (a), the temperature in the processing chamber is adjusted so that the first distribution has a first deviation in the arrangement direction.

6. The substrate processing method according to claim 5, wherein: In (c), the temperature in the processing chamber is adjusted so that the second distribution has a second deviation smaller than the first deviation or so that the second distribution becomes uniform in the arrangement direction.

7. The substrate processing method according to claim 5, wherein: The first distribution is set so that the time from the start of (b) until the temperature distribution in the arrangement direction within the processing chamber converges to the second distribution is shorter than the case where the temperature within the processing chamber is adjusted in (a) by setting the temperature distribution in the arrangement direction within the processing chamber to the second distribution.

8. The substrate processing method according to claim 5, wherein: The first distribution is set so that the maximum value of the deviation of the temperature in the arrangement direction within the processing chamber generated after (b) becomes smaller than the case where the temperature within the processing chamber is adjusted in (a) by setting the temperature distribution in the arrangement direction within the processing chamber to the second distribution.

9. The substrate processing method according to claim 5, wherein: The first distribution is set based on characteristics of a change in temperature distribution in the arrangement direction within the processing chamber caused by the loading of the plurality of substrates in (b).

10. The substrate processing method according to claim 9, wherein: The characteristics of the temperature change in the processing chamber relative to the elapse of time after the start of the loading of the plurality of substrates in (b) differ depending on the position in the arrangement direction.

11. The substrate processing method according to claim 1, wherein: The first temperature is higher than the second temperature, In (a) and (c), the temperature in the processing chamber is adjusted so that the first distribution and the second distribution become uniform in the arrangement direction.

12. The substrate processing method according to claim 1, wherein: In (b), the plurality of substrates are carried in along the arrangement direction from an opening side of a processing container defining the processing chamber, In the first distribution, the temperature on the opening side is higher than the temperature on the closed end side of the processing container.

13. The substrate processing method according to claim 1, wherein: In (a) and (c), the temperature in the processing chamber is adjusted by controlling at least one of a heater for heating the processing chamber and a cooling device for cooling the processing chamber.

14. The substrate processing method according to claim 13, wherein: During at least a portion of the period (a), the temperature in the processing chamber is adjusted by using the heater and the cooling device simultaneously.

15. The substrate processing method according to claim 13, wherein: During at least a portion of the period of (c), the temperature in the processing chamber is adjusted by using the heater and the cooling device simultaneously.

16. The substrate processing method according to claim 13, wherein: In (a), at least one of the heater and the cooling device is controlled so that the temperature distribution in the arrangement direction within the processing chamber becomes the first distribution at the start time of (b).

17. The substrate processing method according to claim 1, wherein: The first temperature is higher than the second temperature, The substrate processing method further comprises: (e) after (d), a step of increasing the temperature inside the processing chamber while the plurality of substrates are accommodated in the processing chamber; and (f) After step (e), a step of unloading the plurality of substrates from the processing chamber.

18. A method for manufacturing a semiconductor device, comprising the following steps: (a) a step of adjusting the temperature in a processing chamber configured to accommodate a plurality of substrates so that a temperature distribution in an arrangement direction of the plurality of substrates in the processing chamber is set to a first distribution in which at least a portion of the processing chamber has a first temperature; (b) carrying the plurality of substrates into the processing chamber while setting the temperature distribution in the arrangement direction within the processing chamber to the first distribution; (c) after (b), a step of adjusting the temperature within the processing chamber so that the temperature distribution in the arrangement direction within the processing chamber is set to a second distribution in which at least a portion within the processing chamber has a second temperature different from the first temperature; and (d) After (c), a step of processing the plurality of substrates while setting the temperature distribution in the arrangement direction within the processing chamber to the second distribution.

19. A computer-readable recording medium having a program recorded thereon for causing a substrate processing apparatus to execute the following steps through a computer, the steps being: (a) a step of adjusting the temperature in a processing chamber configured to accommodate a plurality of substrates so that a temperature distribution in an arrangement direction of the plurality of substrates in the processing chamber is set to a first distribution in which at least a portion of the processing chamber has a first temperature; (b) carrying the plurality of substrates into the processing chamber while setting the temperature distribution in the arrangement direction within the processing chamber to the first distribution; (c) after (b), a step of adjusting the temperature within the processing chamber so that the temperature distribution in the arrangement direction within the processing chamber is set to a second distribution in which at least a portion within the processing chamber has a second temperature different from the first temperature; and (d) After (c), a step of processing the plurality of substrates while setting the temperature distribution in the arrangement direction within the processing chamber to the second distribution.

20. A substrate processing device comprising: A processing chamber configured to accommodate a plurality of substrates; a substrate transport mechanism for transporting the plurality of substrates into the processing chamber; A heater for heating the processing chamber; and A control unit configured to control the substrate transport mechanism and the heater so as to perform the following processing: (a) regulating the temperature within the processing chamber so that the temperature distribution in the arrangement direction of the plurality of substrates within the processing chamber is set to a first distribution in which at least a portion of the processing chamber has a first temperature; (b) carrying the plurality of substrates into the processing chamber for processing in a state where the temperature distribution in the arrangement direction within the processing chamber is set to the first distribution; (c) after (b), adjusting the temperature within the processing chamber so that the temperature distribution in the arrangement direction within the processing chamber is set to a second distribution in which the at least a portion within the processing chamber has a second temperature different from the first temperature; and (d) After (c), the plurality of substrates are processed while the temperature distribution in the arrangement direction within the processing chamber is set to the second distribution.

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