Vertical-cavity surface-emitting laser with dielectric anti-phase mode filtering structure and preparation method of vertical-cavity surface-emitting laser

Abstract

The invention discloses a vertical-cavity surface-emitting laser with a dielectric anti-phase mode filtering structure and a preparation method thereof, and relates to the technical field of vertical-cavity surface-emitting lasers, the laser comprises a top electrode, a p-type Bragg reflector group, a first active region, a tunnel junction, a second active region, an n-type Bragg reflector group, a substrate and a bottom electrode from top to bottom, the upper part of the p-type Bragg reflector group is provided with a dielectric anti-phase mode filtering structure, wherein the dielectric anti-phase mode filtering structure comprises a central SiO2 column deposited in the central area of the upper part of the p-type Bragg reflector group, and two TiO2 dielectric layers respectively deposited on the two sides of the central SiO2 column. The preparation method comprises the following steps: sequentially extending the n-type Bragg reflector group, the second active region, the tunnel junction, the first active region and the p-type Bragg reflector group on the substrate; a top electrode is arranged at the upper part of the p-type Bragg reflector group; a bottom electrode is arranged at the lower part of the substrate; and a dielectric anti-phase mode filtering structure is arranged at the upper part of the p-type Bragg reflector group.

Description

Technical Field

[0001] The invention relates to the technical field of vertical cavity surface emitting lasers, in particular to a vertical cavity surface emitting laser with a dielectric inversion mode filter structure and a preparation method thereof. Background Art

[0002] Semiconductor lasers are one of the key optoelectronic devices in the modern information society. They are widely used in optical communications, optical interconnection, sensing, medical treatment, military, and material processing, and have vital technical and economic significance. As a typical vertical emission structure, the vertical cavity surface emitting laser (VCSEL) has become an important research direction in laser technology since it was first proposed by Professor Kenichi Iga of Tokyo Institute of Technology in 1977 due to its unique advantages in optical performance and integration. VCSEL consists of upper and lower Bragg reflectors (DBR), active areas, and electrodes to form an optical resonant cavity that is perpendicular to the substrate surface and works along the laser emission direction. Compared with traditional edge-emitting lasers, it has more excellent symmetrical spot, low threshold current, high stability and reliability, and is particularly suitable for miniaturization, high efficiency, and high stability application scenarios.

[0003] In the resonant cavity of VCSEL, the lateral distribution of the light field is called the transverse mode, in which the fundamental transverse mode is usually approximated as a Gaussian beam, with higher spectral purity, narrower linewidth and stronger coherence, and can effectively avoid the influence of dispersion. However, in the actual structure, the reflection surface and the active area are not ideal planes, and the distribution of injected carriers is uneven, coupled with the thermal lens effect, VCSEL often has difficulty in stably achieving the output of the fundamental transverse mode. Especially in larger transverse resonant cavities, the competition between the fundamental transverse mode and the higher-order transverse modes is very fierce, resulting in the occurrence of multi-transverse mode output, which limits the performance of VCSEL in many application scenarios.

[0004] In optical communications, the output of multi-transverse mode VCSELs is significantly affected by spectral dispersion and modal dispersion, which limits the transmission distance. In addition, the current absorption characteristics of the higher-order modes have a negative impact on the injection efficiency of the fundamental transverse mode, further reducing the bandwidth and transmission capacity of the device. In the field of optical sensing and optical interconnection, the coherence and wavelength stability of higher-order modes are poor, which significantly reduces the sensing accuracy and system reliability. Therefore, in order to increase the output power of VCSELs and ensure the lasing of the fundamental transverse mode, current research focuses on optimizing the structural design to suppress multi-mode operation and increase power output.

[0005] At present, there are several mainstream solutions for improving the output power of the fundamental transverse mode and achieving high-power output. First, use the photonic crystal structure to etch on the surface of the DBR, and adjust the mode distribution by regulating the refractive index difference between the photonic crystal defect area and the surrounding area. However, the challenge of this method lies in the difficulty of manufacturing high aspect ratio apertures, as well as the increase in light loss and threshold current caused by etching holes; second, by etching surface relief patterns on the surface of the DBR, the mirror loss of the high-order mode is increased, forcing it to transition to the fundamental transverse mode. However, this requires extremely high etching accuracy, and any slight deviation will affect the effect of mode selection; third, adding a restriction layer to improve the high-order mode scattering characteristics. Although this method can effectively suppress high-order modes, it has extremely stringent requirements on epitaxial technology and has problems such as complex preparation and high sensitivity. Fourth, a high-contrast grating is used to replace the traditional DBR mirror, and the selective characteristics of the grating are used to suppress the lasing of high-order modes. However, this design has extremely strict requirements on the epitaxial wafer and extremely high etching accuracy. Finally, the introduction of the antiresonant reflective optical waveguide structure realizes gain compensation in the low-refractive index core layer, reduces the leakage of the fundamental transverse mode to the cladding, and thus enhances the output of the fundamental transverse mode. However, this structure requires a secondary epitaxial process in the implementation process and is highly sensitive to dislocations and mechanical disturbances. Summary of the invention

[0006] The purpose of the present invention is to solve the problems of complexity, high precision requirement and low reliability of the prepared device in the existing method for improving the fundamental transverse mode output power and realizing high power output.

[0007] The present invention deposits a combined dielectric layer of SiO2 and TiO2 in the top P-type DBR in the clear aperture to change (increase / decrease) the mirror reflectivity of the entire device through anti-phase reflection, thereby generating a threshold material gain change related to the spatial position and VCSEL laser lateral mode control. This method of adding a structural layer on the top of the device allows mode control at any laser wavelength and VCSEL layer structure without epitaxial regeneration; and uses a tunnel junction structure to cascade dual active regions to increase the output power of the fundamental lateral mode, thereby obtaining a dielectric anti-phase mode filter structure to promote 1064nm high-power single-mode output of a double-junction vertical cavity surface emitting laser, which meets the application of a variety of single-mode high-power light sources, for example, it can be used as a light source for long-distance free-space optical communications and optical interconnections.

[0008] In order to achieve the above-mentioned purpose, the present invention specifically adopts the following technical solutions:

[0009] In a first aspect, the present invention provides a vertical cavity surface emitting laser with a dielectric anti-phase mode filter structure, wherein the laser comprises, from top to bottom, a top electrode, a p-type Bragg reflector group, a first active region, a tunnel junction, a second active region, an n-type Bragg reflector group, a substrate, and a bottom electrode, wherein a dielectric anti-phase mode filter structure is arranged on the upper part of the p-type Bragg reflector group.

[0010] Furthermore, the dielectric anti-phase mode filter structure includes a central SiO2 column deposited in the upper central area of ​​the p-type Bragg reflector group, and two TiO2 dielectric layers deposited on both sides of the central SiO2 column.

[0011] Furthermore, the radius of the central SiO2 column is 4 to 5 μm.

[0012] Furthermore, the thickness of the central SiO2 column and the TiO2 dielectric layer is 110-120 nm.

[0013] Furthermore, a first oxide layer is disposed between the p-type Bragg reflector group and the first active region, and a second oxide layer is disposed between the tunnel junction and the second active region.

[0014] Furthermore, the first oxide layer and the second oxide layer are Al2O3 oxide layers.

[0015] Furthermore, the material of the tunnel junction is AlGaAs, and the doping concentration is 2×10 19 m 3 , with a width of 10nm.

[0016] Furthermore, the distance between the first active region and the second active region is 1.5λ.

[0017] In a second aspect, the present invention also provides a method for preparing a vertical cavity surface emitting laser based on the above-mentioned dielectric inversion mode filter structure, the method comprising the following steps:

[0018] S1, providing a substrate, and sequentially epitaxially growing an n-type Bragg reflector group, a second active region, a tunnel junction, a first active region, and a p-type Bragg reflector group on the substrate to obtain a first preform;

[0019] S2, disposing a top electrode on the upper part of the p-type Bragg reflector group of the first preform, and disposing a bottom electrode on the lower part of the substrate of the first preform, to obtain a second preform;

[0020] S3. Arrange a dielectric anti-phase mode filter structure on the upper part of the p-type Bragg reflector group of the second preform to complete the production of the laser.

[0021] Furthermore, the specific operation of S3 is to deposit a central SiO2 column in the central area of ​​the upper part of the p-type Bragg reflector group, and then deposit TiO2 dielectric layers on both sides of the central SiO2 column to complete the production of the laser.

[0022] Compared with the prior art, the advantages of the present invention are:

[0023] 1. The present invention relates to a vertical cavity surface emitting laser with a dielectric anti-phase mode filter structure. By arranging a dielectric anti-phase mode filter structure on the upper part of a p-type Bragg reflector group, a reflectivity difference with spatial dependence can be formed. The mirror reflectivity of the entire device is changed (increased / decreased) by anti-phase reflection, thereby generating a threshold material gain change related to the spatial position and VCSEL laser lateral mode control, which can effectively solve the problems of complex VCSEL single-mode structure preparation and low light output power in the prior art.

[0024] In addition, the vertical cavity surface emitting laser of the present invention is also provided with a dual active region structure of a first active region and a second active region, and a tunnel junction is provided to connect the first active region and the second active region in series in the same resonant cavity to achieve the doubling of the number of photons and quantum efficiency, thereby obtaining a larger gain.

[0025] Without increasing the chip area, the optical output power of the multi-junction cascaded VCSEL is increased several times compared to the output power of the single-junction VCSEL with the same aperture, which not only can achieve a higher power density, but also can greatly improve the power conversion efficiency of the VCSEL device.

[0026] In addition, since the above-mentioned improvements can effectively improve the gain, and the increase in gain can reduce the operating current of the multi-junction VCSEL, thereby reducing the power consumption and cost of the driving circuit, it can also achieve a compromise optimization of voltage and current to improve the compatibility of the driving circuit.

[0027] 2. The method for preparing a vertical cavity surface emitting laser with a dielectric inversion mode filter structure involved in the present invention greatly improves the output power of the fundamental transverse mode, has a simple preparation process, and has low cost, wide applicability, and a large application space. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 The figure is a schematic structural diagram of a vertical cavity surface emitting laser with a dielectric antiphase mode filter structure in an embodiment of the present invention.

[0029] Figure 2 Schematic diagram of VCSEL threshold modal gain of two material dielectric filter structures in the experimental example of the present invention.

[0030] Figure 3Schematic diagram of the absolute value of different transverse mode threshold current differences under different SiO2 radii in the test example of the present invention.

[0031] Figure 4 Schematic diagram of the LIV curve of the fundamental transverse mode LP01 of a vertical cavity surface emitting laser with a dielectric anti-phase mode filter structure in an embodiment of the present invention.

[0032] Figure markings: 1-top electrode, 2-p-type Bragg reflector group, 3-first active region, 4-tunnel junction, 5-second active region, 6-n-type Bragg reflector group, 7-substrate, 8-bottom electrode, 9-first oxide layer, 10-second oxide layer, 11-TiO2 dielectric layer, 12-central SiO2 column.

[0033] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0034] Therefore, the following detailed description of the embodiments of the present invention is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. DETAILED DESCRIPTION

[0035] In a first aspect, an embodiment of the present invention provides a vertical cavity surface emitting laser with a dielectric reverse phase mode filter structure, see Figure 1 It can be seen that the laser includes, from top to bottom, a top electrode 1, a p-type Bragg reflector group 2, a first active region 3, a tunnel junction 4, a second active region 5, an n-type Bragg reflector group 6, a substrate 7, and a bottom electrode 8. A dielectric inversion mode filter structure is arranged on the top of the p-type Bragg reflector group 2.

[0036] It can be understood that the vertical cavity surface emitting laser with a dielectric anti-phase mode filter structure involved in the embodiment of the present invention can form a reflectivity difference with spatial dependence by arranging a dielectric anti-phase mode filter structure on the upper part of the p-type Bragg reflector group, and change (increase / decrease) the mirror reflectivity of the entire device through anti-phase reflection, thereby generating a threshold material gain change related to the spatial position and VCSEL laser lateral mode control, which can effectively solve the problems of complex VCSEL single-mode structure preparation and low light output power in the prior art.

[0037] In addition, the vertical cavity surface emitting laser of the present invention is also provided with a dual active region structure of a first active region and a second active region, and a tunnel junction is provided to connect the first active region and the second active region in series in the same resonant cavity to achieve the doubling of the number of photons and quantum efficiency, thereby obtaining a larger gain.

[0038] Without increasing the chip area, the optical output power of the multi-junction cascaded VCSEL is increased several times compared to the output power of the single-junction VCSEL with the same aperture, which not only can achieve a higher power density, but also can greatly improve the power conversion efficiency of the VCSEL device.

[0039] In addition, since the above-mentioned improvements can effectively improve the gain, and the increase in gain can reduce the operating current of the multi-junction VCSEL, thereby reducing the power consumption and cost of the driving circuit, it can also achieve a compromise optimization of voltage and current to improve the compatibility of the driving circuit.

[0040] In some embodiments of the present invention, please continue to refer to Figure 1 The dielectric anti-phase mode filter structure includes a central SiO2 column 12 deposited on the upper central area of ​​the p-type Bragg reflector group 2 and two TiO2 dielectric layers 11 deposited on both sides of the central SiO2 column 12 respectively.

[0041] In some embodiments of the present invention, the radius of the central SiO2 column is 4-5 μm.

[0042] In some embodiments of the present invention, the thickness of the central SiO 2 column and the TiO 2 dielectric layer is 110-120 nm.

[0043] It can be understood that the present invention utilizes SiO2 and TiO2 dielectric layers with different refractive indices located at different positions deposited above the p-type Bragg reflector group to form a spatially dependent reflectivity difference, which means that each lateral mode corresponding to the two regions will experience different reflection losses.

[0044] Furthermore, the present invention can optimize the reflectivity of the p-type Bragg reflector group by limiting the thickness of the central SiO2 column and the TiO2 dielectric layer, and the radius of the central SiO2 column, and further obtain the threshold modal gain through the following formula (1).

[0045]

[0046] Where Γ is the longitudinal constraint factor, g th is the threshold material gain, α i is the intrinsic internal loss, L is the effective optical cavity length, R b is the reflectivity of the bottom DBR, which is close to 1, R tis the reflectivity of the top DBR, which fluctuates with the thickness of SiO2 or TiO2. The corresponding threshold modal gain also fluctuates accordingly.

[0047] In order to promote the fundamental transverse mode lasing and suppress the higher-order modes, it is necessary to ensure that the loss of the central SiO2 part (central SiO2 column) is low, while the loss of the TiO2 parts on both sides (TiO2 dielectric layers) is high, which corresponds to the low threshold modal gain of the former and the high threshold modal gain of the latter.

[0048] Furthermore, in addition to the effect of SiO2 and TiO2 thickness design on reflectivity, whether the transverse mode of VCSEL can be emitted depends largely on their own modal loss. In order to ensure that the fundamental transverse mode and the higher-order mode have the largest threshold modal gain difference, the radius of the SiO2 layer located at the center of the device should coincide with the fundamental transverse mode to the greatest extent.

[0049] In some embodiments of the present invention, please continue to refer to Figure 1 A first oxide layer 9 is disposed between the p-type Bragg reflector group 2 and the first active area 3 , and a second oxide layer 10 is disposed between the tunnel junction 4 and the second active area 5 .

[0050] In some embodiments of the present invention, the first oxide layer and the second oxide layer are Al2O3 oxide layers.

[0051] In some embodiments of the present invention, the material of the tunnel junction is AlGaAs with a doping concentration of 2×10 19 m 3 , with a width of 10nm.

[0052] In some embodiments of the present invention, the distance between the first active region and the second active region is 1.5λ.

[0053] It can be understood that the present invention forms the first oxide layer and the second oxide layer by lateral oxidation, forming an Al2O3 oxide layer with good insulation, the first oxide layer is located between the two active regions, and the second oxide layer is located between the high and low refractive index materials of the first pair of p-DBRs. By limiting the materials of the first oxide layer and the second oxide layer, the materials of the tunnel junction, the doping concentration and the width, the current crowding effect at the edge of the oxide layer and the free carrier absorption loss caused by the heavily doped tunnel junction are reduced.

[0054] In some embodiments of the present invention, the diameter of the oxidation apertures of the first oxidation layer and the second oxidation layer is preferably 10 μm, which can effectively limit carriers and lateral light fields, while further ensuring the effect of high power output.

[0055] In a second aspect, the present invention also provides a method for preparing a vertical cavity surface emitting laser based on the above-mentioned dielectric reverse phase mode filter structure, please refer to Figure 1 , the method comprises the following steps:

[0056] S1, providing a substrate 7, and sequentially epitaxially growing an n-type Bragg reflector group 6, a second active region 5, a tunnel junction 4, a first active region 3, and a p-type Bragg reflector group 2 on the substrate 7 to obtain a first preform;

[0057] S2, disposing a top electrode 1 on the upper part of the p-type Bragg reflector group 2 of the first preform, and disposing a bottom electrode 8 on the lower part of the substrate 7 of the first preform, to obtain a second preform;

[0058] S3, setting a dielectric anti-phase mode filter structure on the upper part of the p-type Bragg reflector group 2 of the second preform to complete the production of the laser.

[0059] It can be understood that the method for preparing a vertical cavity surface emitting laser with a dielectric inversion mode filter structure involved in the present invention greatly improves the output power of the fundamental transverse mode, has a simple preparation process, and is low in cost, has wide applicability, and has a large application space.

[0060] In some embodiments of the present invention, please continue to refer to Figure 1 The specific operation of S3 is to deposit a central SiO2 column 12 in the central area of ​​the upper part of the p-type Bragg reflector group 2, and then deposit TiO2 dielectric layers 11 on both sides of the central SiO2 column 12 to complete the production of the laser.

[0061] In some embodiments of the present invention, please continue to refer to Figure 1 A first oxide layer 9 is disposed between the p-type Bragg reflector group 2 and the first active region 3 , and a second oxide layer 10 is disposed between the tunnel junction 4 and the second active region 5 .

[0062] Example 1

[0063] 1.1 Device preparation process

[0064] In this embodiment, the specific operations are:

[0065] S1, providing a substrate, and sequentially epitaxially growing an n-type Bragg reflector group, a second active region, a tunnel junction, a first active region, and a p-type Bragg reflector group on the substrate to obtain a first preform;

[0066] S2, disposing a top electrode on the upper part of the p-type Bragg reflector group of the first preform, and disposing a bottom electrode on the lower part of the substrate of the first preform, to obtain a second preform;

[0067] S3. Depositing a central SiO2 column in the central area of ​​the upper part of the p-type Bragg reflector assembly, and then depositing TiO2 dielectric layers on both sides of the central SiO2 column to complete the production of the laser.

[0068] A first oxide layer is disposed between the p-type Bragg reflector group and the first active region, and a second oxide layer is disposed between the tunnel junction and the second active region. The device 1 is prepared.

[0069] Please refer to Figure 1 The structure of the device 1 is as follows: from top to bottom, it includes a top electrode 1, a p-type Bragg reflector group 2, a first active area 3, a tunnel junction 4, a second active area 5, an n-type Bragg reflector group 6, a substrate 7, and a bottom electrode 8. A dielectric inversion mode filter structure is arranged on the upper part of the p-type Bragg reflector group 2. The dielectric inversion mode filter structure includes a central SiO2 column 12 deposited in the central area of ​​the upper part of the p-type Bragg reflector group 2, and two TiO2 dielectric layers 11 deposited on both sides of the central SiO2 column 12. A first oxide layer 9 is arranged between the p-type Bragg reflector group 2 and the first active area 3, and a second oxide layer 10 is arranged between the tunnel junction 4 and the second active area 5.

[0070] The radius of the central SiO2 column and the TiO2 dielectric layer are 8 μm respectively. The thickness of the central SiO2 column and the TiO2 dielectric layer is optimally within the range of 110 nm to 120 nm.

[0071] Example 2

[0072] In this embodiment, the device preparation process is the same as that of embodiment 1, except that the radius of the central SiO2 column is optimally within the range of 4 μm to 6 μm, and the thickness of the central SiO2 column and the TiO2 dielectric layer is within the range of 110 nm to 120 nm.

[0073] Experimental Example 1: Threshold modal gain obtained by different thicknesses of central SiO2 pillars and TiO2 dielectric layers 1.1 Experimental operation

[0074] A plurality of experimental groups are set up, and the variables are the thickness of the central SiO2 column and the TiO2 dielectric layer, and a schematic diagram of the change of the threshold modal gain is obtained.

[0075] 1.2 Results Analysis

[0076] See also Figure 2(The horizontal axis is Thickness, representing the thickness of the central SiO2 column and the TiO2 dielectric layer. The left vertical axis is threshold modal gain, representing the mode threshold gain of the overall structure after introducing SiO2 and TiO2 dielectric layers of different thicknesses respectively; the right vertical axis is The difference value of TMG, representing the mode threshold gain difference caused by the two dielectric layers of SiO2 and TiO2). It can be clearly seen that the maximum difference is in the range of 110nm to 120nm, and the thickness of the central SiO2 column and the TiO2 dielectric layer is preferably near this thickness.

[0077] Experimental Example 2: Threshold modal gain obtained by central SiO2 columns with different radii

[0078] 2.1 Test operation

[0079] Multiple experimental groups were set up, with the variable being the radius of the SiO2 column in the control center, and a schematic diagram of the change in threshold modal gain was obtained.

[0080] 2.2 Results Analysis

[0081] See also Figure 3 (The horizontal axis is the Radius of the SiO2 pillar, which represents the radius of the central SiO2. The vertical axis is the Threshold current difference, which represents the threshold current difference of different transverse modes caused by different SiO2 radii). The threshold modal gain of different transverse modes is obtained by using central SiO2 pillars with different radii, so as to overlap with the fundamental transverse mode to the greatest extent, reduce the reflection loss of the fundamental transverse mode, and then obtain single-mode emission. It can be clearly seen that the maximum difference is in the range of 4 to 5μm, and the radius of the central SiO2 pillar is preferably near this radius.

[0082] Experimental Example 3 Performance test of the device 1 prepared in Example 1

[0083] 3.1 Test operation

[0084] The LIV curve of LP01 of the device 1 prepared in Example 1 is measured. The measurement results are shown in Figure 4 .

[0085] 3.2 Results Analysis

[0086] See also Figure 4 From the measurement result graph (the horizontal axis is Current, representing the current; the vertical axis is Laserpower, representing the output power of the fundamental transverse mode), it can be seen that the device 1 prepared in Example 1 has excellent performance.

[0087] After temperature compensation, the device 1 prepared in Example 1 can achieve a fundamental transverse mode output power of 30 mW when the maximum operating current is 15 mA. In terms of electrical performance, the threshold current is 3 mA, the turn-on voltage is 2.2 V, and the PCE reaches 51.83%.

[0088] The above embodiment is only one implementation of the present invention, and its description is relatively specific and detailed, but it cannot be understood as limiting the scope of the patent of the present invention. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be based on the attached claims.

Claims

1. A vertical cavity surface emitting laser with a dielectric inversion mode filter structure, characterized in that: The laser comprises, from top to bottom, a top electrode, a p-type Bragg reflector group, a first active region, a tunnel junction, a second active region, an n-type Bragg reflector group, a substrate, and a bottom electrode. A dielectric inversion mode filter structure is arranged on the top of the p-type Bragg reflector group.

2. A vertical cavity surface emitting laser with a dielectric antiphase mode filter structure according to claim 1, characterized in that: The dielectric inversion mode filter structure comprises a central SiO2 column deposited on the central area of ​​the upper part of the p-type Bragg reflector group, and two TiO2 dielectric layers respectively deposited on both sides of the central SiO2 column.

3. The vertical cavity surface emitting laser with a dielectric anti-phase mode filter structure according to claim 2, characterized in that: The radius of the central SiO2 column is 4 to 5 μm.

4. The vertical cavity surface emitting laser with a dielectric antiphase mode filter structure according to claim 2, characterized in that: The thickness of the central SiO2 column and the TiO2 dielectric layer is 110-120 nm.

5. The vertical cavity surface emitting laser with a dielectric anti-phase mode filter structure according to claim 1, characterized in that: A first oxide layer is disposed between the p-type Bragg reflector group and the first active region, and a second oxide layer is disposed between the tunnel junction and the second active region.

6. The vertical cavity surface emitting laser with a dielectric anti-phase mode filter structure according to claim 5, characterized in that: The first oxide layer and the second oxide layer are Al2O3 oxide layers.

7. The vertical cavity surface emitting laser with a dielectric anti-phase mode filter structure according to claim 1, characterized in that: The material of the tunnel junction is AlGaAs with a doping concentration of 2×10 19 m 3 , with a width of 10nm.

8. The vertical cavity surface emitting laser with a dielectric anti-phase mode filter structure according to claim 1, characterized in that: The distance between the first active region and the second active region is 1.5λ.

9. A method for preparing a vertical cavity surface emitting laser based on a dielectric inversion mode filter structure according to any one of claims 1 to 8, characterized in that: The method comprises the following steps: S1, providing a substrate, and sequentially epitaxially growing an n-type Bragg reflector group, a second active region, a tunnel junction, a first active region, and a p-type Bragg reflector group on the substrate to obtain a first preform; S2, disposing a top electrode on the upper part of the p-type Bragg reflector group of the first preform, and disposing a bottom electrode on the lower part of the substrate of the first preform, to obtain a second preform; S3. Arrange a dielectric anti-phase mode filter structure on the upper part of the p-type Bragg reflector group of the second preform to complete the production of the laser.

10. The method for preparing a vertical cavity surface emitting laser with a dielectric reverse phase mode filter structure according to claim 9, characterized in that: The specific operation of S3 is to deposit a central SiO2 column in the central area of ​​the upper part of the p-type Bragg reflector group, and then deposit TiO2 dielectric layers on both sides of the central SiO2 column to complete the production of the laser.

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