Carbon nanotube transistor radio frequency amplifier and electronic equipment

Abstract

The invention discloses a carbon nanotube transistor radio frequency amplifier which comprises a radio frequency input end, an input matching network, a carbon-based transistor, an output matching network and a radio frequency output end which are connected in series through microstrip lines. A drain electrode of a carbon-based device wafer in the carbon-based transistor is connected to a ceramic tube shell through a bonding wire to be integrally grounded, a grid electrode and a source electrode of the carbon-based device wafer are led out to pins through bonding wires respectively, and the pins are welded to an amplifier substrate. By designing the input / output impedance conversion line, step-by-step impedance matching is realized, radio frequency energy reflection caused by impedance mismatch is remarkably reduced, the problems of self-oscillation and signal distortion are avoided, and thus the signal quality and stability of the system are improved. Besides, an internal matching network is optimized through inductance brought by gold wire bonding, the influence of parasitic parameters on performance is reduced, and it is ensured that the radio frequency power amplifier has high matching sensitivity and accurate performance characterization.

Description

Technical Field

[0001] The present application belongs to the field of integrated circuits, and in particular relates to a carbon nanotube transistor radio frequency amplifier and electronic equipment. Background Art

[0002] Carbon nanotube radio frequency transistors have shown great application potential in future high-frequency communications and electronic devices. Carbon nanotubes have excellent electrical properties, such as high carrier mobility and high carrier saturation velocity, which makes them particularly suitable as channel materials for high-frequency devices. In recent years, radio frequency transistors based on carbon nanotubes have achieved cutoff frequencies and oscillation frequencies exceeding 100 GHz, showing excellent high-frequency performance. In addition, carbon nanotubes can achieve ballistic transport under shorter channels, reduce scattering effects, and significantly improve the amplification performance of the device. The excellent chemical stability and thermal properties of carbon nanotubes enable carbon-based transistors to maintain stable electrical properties in harsh environments, so they have broad prospects in high-frequency electronic equipment and industrial applications.

[0003] Although carbon nanotubes are very stable, the metal electrodes, gate dielectrics and other materials in the device may change due to long-term exposure to water molecules, gases and other environments. The most ideal way to study the stability of RF devices is to keep the devices in working state for a long time, but on the one hand, due to the limitations of equipment and test conditions, such testing cannot be carried out. On the other hand, it is impossible to distinguish the impact of external bias on the device from the changes in the device's own materials and structure during long-term working conditions. Therefore, there are major problems with the stability of carbon-based RF devices themselves in a static state in the atmospheric environment.

[0004] Existing carbon-based RF power amplifier chips often cause a large amount of RF energy to be reflected when the load impedance is mismatched, which in turn causes self-oscillation, affecting the signal quality and stability of the system, and even causing physical damage to the equipment. The high-frequency characteristics of the RF power amplifier make it susceptible to the mismatch between internal parasitic parameters and external matching parameters, resulting in poor matching sensitivity between frequency bands, causing self-oscillation in different frequency bands, affecting the frequency band receiving sensitivity, and failing to accurately reflect the actual amplification performance of the chip. In severe cases, the uplink will fail.

[0005] Therefore, a carbon nanotube transistor radio frequency amplifier is needed to solve the above problems. Summary of the invention

[0006] The present application provides a carbon nanotube transistor radio frequency amplifier and electronic equipment to solve the stability problem of carbon-based radio frequency power amplifier chips under working conditions, especially to achieve stability adjustment under conditions of load impedance mismatch and changing working environment to avoid self-oscillation, standing waves and signal distortion.

[0007] The technical effects to be achieved by this application are achieved through the following solutions:

[0008] According to the first aspect of the present application, there is provided a carbon nanotube transistor radio frequency amplifier, comprising a radio frequency input terminal, an input matching network, a carbon-based transistor, an output matching network and a radio frequency output terminal connected in series with a microstrip line, the carbon-based transistor being packaged in a ceramic tube shell, the drain of the carbon-based device wafer in the carbon-based transistor being connected to the ceramic tube shell through a bonding wire for overall grounding, the gate and source of the carbon-based device wafer being respectively led out to pins through bonding wires, and the pins being welded to the amplifier substrate.

[0009] Preferably, an input impedance transformation line and an output impedance transformation line are connected to the RF input end and the RF output end respectively.

[0010] Preferably, the parameters of the bonding wire are adjusted as needed to adjust the equivalent inductance of the source, drain and gate of the carbon-based transistor; the parameters include the shape of the bonding wire, the length of the bonding wire and the height of the bonding wire, and the adjustment is performed using the following formula:

[0011]

[0012] Where: Le is the equivalent inductance, k is a constant related to the material and electromagnetic properties, h is the height of the bond wire, l is the effective length of the bond wire, and d is the spacing between the bond wire and other conductors.

[0013] Preferably, the height of the bonding wire is 0.4-0.8 mm, the length of the bonding wire is 1-2 mm, and the spacing between the bonding wires is 0.3-0.4 mm.

[0014] Preferably, the parallel resonant frequency of the carbon-based transistor and the bandwidth of the power amplifier are adjusted by adjusting the parameters of the bonding wire as needed, wherein the parameters include the length and thickness of the bonding wire, and the equivalent inductance is adjusted using the following formula:

[0015]

[0016] Where: Le is the equivalent inductance, l is the length of the bonding wire, h is the height between the bonding wire and the ground plane, r is the radius of the bonding wire, and μ0 is the vacuum permeability;

[0017] The parallel resonant frequency is adjusted using the following formula:

[0018]

[0019] Where: f0 is the resonant frequency; C p For capacitance.

[0020] Preferably, a bias device is connected to the RF input end, and the DC signal and the RF signal are processed by the bias device and then input into the RF input end.

[0021] Preferably, the pin connected to the gate is a trapezoidal structure.

[0022] Preferably, the amplifier substrate is RO4003.

[0023] According to a second aspect of the present application, an electronic device is provided, which adopts the above-mentioned carbon nanotube transistor radio frequency amplifier.

[0024] According to an embodiment of the present application, the beneficial effect of using the carbon nanotube transistor radio frequency amplifier is that: by designing the input / output impedance transformation line, step-by-step impedance matching is achieved, which significantly reduces the radio frequency energy reflection caused by impedance mismatch, avoids self-oscillation and signal distortion problems, and thus improves the signal quality and stability of the system. In addition, the inductance brought by gold wire bonding optimizes the internal matching network, reduces the impact of parasitic parameters on performance, and ensures that the radio frequency power amplifier has high matching sensitivity and accurate performance characterization. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the embodiments of the present application or the existing technical solutions, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0026] Figure 1 This is a circuit structure block diagram of a carbon nanotube transistor radio frequency amplifier in one embodiment of the present application;

[0027] Figure 2 for Figure 1 Schematic diagram of the cross-sectional structure of the carbon-based transistor in the carbon nanotube transistor radio frequency amplifier;

[0028] Figure 3 for Figure 1 Schematic diagram of the top-down structure of a carbon-based transistor. DETAILED DESCRIPTION

[0029] In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0030] like Figures 1 to 3 As shown, the carbon nanotube transistor RF amplifier in an embodiment of the present application includes an RF input terminal 201, an input matching network 202, a carbon-based transistor 100, an output matching network 203 and an RF output terminal 204 connected in series with a microstrip line 205, the carbon-based transistor 100 is packaged with a ceramic tube shell 116, and the drain 112 of the carbon-based device wafer 111 in the carbon-based transistor 100 is connected to the ceramic tube shell 116 through a bonding wire 117 for overall grounding, and the ceramic tube shell 116 is connected to a ground terminal 206, and the gate 114 and the source 113 of the carbon-based device wafer 111 are respectively led out to the pin 115 through the bonding wire 117, and the pin 115 is welded to the amplifier substrate 120.

[0031] In this embodiment, the series structure of multiple microstrip lines 205 can effectively reduce the quality factor of input matching, thereby achieving a broadband matching effect; reducing signal loss, the RF signal has lower loss during the input matching process, and improving the power amplifier performance.

[0032] The microstrip line 205 is made of Rogers 4003 material, which has low dielectric constant (about 3.38), low dielectric loss (about 0.0027), excellent thermal properties (such as thermal expansion coefficient and thermal conductivity) and good processability. It is suitable for use in high-frequency and radio frequency circuits, especially for applications that require low loss, high-precision impedance matching, and broadband coverage.

[0033] The carbon-based transistor 100 is packaged in a tube shell to isolate it from changes caused by environmental factors such as water molecules and gas, thereby increasing stability. The ceramic tube shell 116 is packaged because its high-temperature stability can protect internal components from external heat even at high power output, thereby ensuring reliable operation of the equipment.

[0034] In terms of mechanical protection, the ceramic tube shell 116 package has high strength and impact resistance, and can resist the influence of external impact, vibration and thermal expansion stress, protecting the internal precision components from damage. Especially in key components such as gold wire bonding, the ceramic tube shell 116 provides reliable support to prevent the solder joints from loosening or breaking, further improving the service life and reliability of the device.

[0035] The bonding wire 117 in this embodiment is usually made of copper wire or gold wire to achieve a stable electrical connection. The equivalent inductance of the source-drain-gate triode of the carbon-based transistor 100 is adjusted by adjusting the shape, length or height of the bonding wire 117; the parallel resonant frequency is controlled by adjusting the parameters of the gold wire (such as length and thickness), thereby flexibly adjusting the bandwidth of the power amplifier.

[0036] In this embodiment, the pin 115 connected to the gate 114 is a trapezoidal structure for easy identification, the amplifier substrate 120 is RO4003, and the pin 115 connected to the amplifier substrate 120 is implemented by a complete piece of metal alloy.

[0037] In an embodiment of the present application, an input impedance transformation line and an output impedance transformation line are connected to the RF input terminal 201 and the RF output terminal 204 respectively.

[0038] The input impedance transformation line and the output impedance transformation line are used for impedance transformation, so that the impedance of the test device matches the impedance of the amplifier chip, thereby improving the application range and sensitivity;

[0039] The input impedance transformation line is used to gradually reduce the input impedance from 50 ohms of the device to the impedance of the amplifier chip (less than 5 ohms) to ensure that the input signal can be effectively loaded onto the amplifier chip. Through the design of the input impedance transformation line and the output impedance transformation line, pre-matching between the device and the amplifier chip is achieved.

[0040] When the impedance changes dramatically, most of the RF signal will be reflected back to the source, affecting the energy transmission efficiency. By adopting the step impedance design, the total impedance transformation process is divided into multiple small impedance changes, and the change amount at each level is small. In this way, the impedance of the source end can be matched with the impedance of the load end step by step, thereby reducing reflections, improving the accuracy of the test process, and reducing the risk of damage to the amplifier chip and test fixture.

[0041] In one embodiment of the present application, the equivalent inductance (Le) is mainly determined by the following parameters:

[0042] The length of the bonding wire: the longer the length, the greater the equivalent inductance;

[0043] The shape of the bond wire: The coil shape increases the path length and also increases the inductance;

[0044] Height of the bond wire (distance from the substrate): Increasing the height will increase the inductance because the electromagnetic field distribution in the vertical direction is expanded;

[0045] Bonding wire material: Gold wire usually has fixed magnetic conductivity, but changing the material (such as aluminum) may also change the inductance value;

[0046] Substrate parasitic inductance: Substrate design (such as ground loop design) will also have a superposition effect on the equivalent inductance;

[0047] Therefore, the parameters of the bonding wire are adjusted according to different application environments to adjust the equivalent inductance of the source, drain and gate of the carbon-based transistor; the parameters include the shape of the bonding wire, the length of the bonding wire and the height of the bonding wire, and the adjustment is performed using the following formula:

[0048]

[0049] Where: Le is the equivalent inductance, k is a constant related to the material and electromagnetic properties, h is the height of the bond wire (the distance from the substrate), l is the effective length of the bond wire, and d is the spacing between the bond wire and other conductors.

[0050] Different parameters need to be set in different target frequency ranges. In this embodiment, taking the application in the medium frequency range (1-5GHz) as an example, the height of the bonding wire is set to 0.4-0.8mm, the length of the bonding wire is set to 1-2mm, and the spacing of the bonding wire is set to 0.3-0.4mm, which can make the equivalent inductance reach 1-3nH;.

[0051] In other embodiments, when applied in a high frequency range (greater than 5 GHz), if a target inductance of 0.5-1.5 nH is to be achieved, the bonding wire height parameter needs to be set to 0.2-0.5 mm, the bonding wire length parameter needs to be set to 0.5-1.2 mm, and the bonding wire spacing needs to be set to 0.3 mm;

[0052] When used in the low frequency range (less than 1 GHz), to achieve a target inductance of 2-5 nH, the bond wire height needs to be set to 0.6-1.0 mm, the bond wire length to 1.5-3 mm, and the bond wire spacing to 0.4-0.5 mm.

[0053] The above formula simplifies the bonding wire structure under RF conditions and is suitable for RF design and bonding wire applications. It is fast to calculate and easy to adjust design parameters (such as the length, height and spacing of the bonding wire). It is suitable for rapid estimation and optimization in high-frequency circuits such as RF power amplifiers and filters.

[0054] In one embodiment of the present application, the parameters of the bonding wire are adjusted as needed to adjust the parallel resonant frequency of the carbon-based transistor and the bandwidth of the power amplifier. The parameters include the length and thickness of the bonding wire. The equivalent inductance is adjusted using the following formula:

[0055]

[0056] Where: Le is the equivalent inductance, l is the length of the bonding wire, h is the height between the bonding wire and the ground plane, r is the radius of the bonding wire, and μ0 is the magnetic permeability of the vacuum. For long wires and low-frequency applications, this formula can more accurately describe the inductance value of long wires, which is suitable for inductance calculations of transmission lines, cables, and low-frequency circuits.

[0057] The parallel resonant frequency is adjusted using the following formula:

[0058]

[0059] Where: f0 is the resonant frequency; C p For capacitance, specifically:

[0060] The horizontal laying length of the bonding wire (i.e. the straight-line distance from welding point A to welding point B) is controlled by the bonding equipment. Longer wires increase inductance, and shorter wires reduce inductance.

[0061] Adjust the height of the bonding wire from the substrate (i.e. the height of the top of the bonding arc) through the bonding equipment. A higher wire increases the equivalent inductance, and a lower wire reduces the inductance.

[0062] Changing the layout of the solder joints changes the effective length and path of the bonding wires, and changing the path length can adjust the inductance.

[0063] In different application scenarios, different resonant frequencies need to be matched, for example:

[0064] When used in a high-power amplifier in this embodiment, stability needs to be improved, so the bonding wire length is set to 2 mm, the bonding wire height is set to 0.5 mm, and the equivalent inductance at this time is about 1.0 nH, and a 2.5 pF capacitor is connected in parallel, so that the resonant frequency can be around 3.2 GHz;

[0065] In other embodiments, for example, when high-frequency gain is required and suitable for broadband communication, the bonding wire length is set to 1 mm and the bonding wire height is set to 0.5 mm. At this time, the equivalent inductance is about 0.5 nH, and a 1.0 pF capacitor is connected in parallel, so that the resonant frequency can reach about 7.1 GHz;

[0066] In other embodiments, for example, when medium load adaptability and enhanced anti-mismatch capability are required, the bonding wire length is set to 1.5 mm and the bonding wire height is set to 0.3 mm. At this time, the equivalent inductance is about 0.8 nH, and a 1.8 pF capacitor is connected in parallel, so that the resonant frequency can reach about 4.2 GHz.

[0067] In one embodiment of the present application, a bias device (Bi as Tee) is connected to the RF input end, and the DC signal and the RF signal are processed by the bias device and then input into the RF input end;

[0068] Since Bi as Tee usually contains capacitors and inductors: capacitors are used to prevent DC signals from entering the RF source to ensure that DC does not damage the RF source; inductors are used to prevent RF signals from entering the DC power supply to prevent RF energy from being fed back to the DC power supply and affecting the stability of the DC power supply. Therefore, using Bi as Tee can effectively combine RF signals and DC power supply while maintaining their independence and reducing mutual interference between signals.

[0069] During the amplifier test, the amplifier chip is fed with power by using Bias Tee on the test circuit board, eliminating the need for an external power supply circuit, thereby reducing the complexity of the test, reducing the size of the test device, and improving the RF performance and stability of the test device.

[0070] When selecting Bias Tee in this embodiment, it is necessary to first consider its operating frequency range to ensure that it can cover the frequency band of the RF signal. Generally, products suitable for 1MHz to tens of GHz should be selected. Secondly, the insertion loss should be as low as possible, and the insertion loss is usually required to be less than 0.5dB at high frequencies to reduce signal attenuation and reflection. In addition, the Bias Tee should have sufficient DC current carrying capacity to meet the bias current requirements of the RF device, while ensuring the isolation of the DC voltage to prevent the RF signal from being interfered with by the DC voltage. The input and output impedances should generally match the impedance of the RF device, usually 50Ω, to avoid signal reflections.

[0071] Considering environmental factors, the Bias Tee should have good temperature stability and be able to operate stably within the predetermined operating temperature range. Finally, the volume and package should also be selected based on the space requirements of the actual application, especially for compact designs. When selecting, the DC current direction and coupling method must also be determined according to application needs.

[0072] The TRL calibration method is used to test the performance of the amplifier chip. By testing the through standard (Through), reflection standard (Ref l ect) and transmission line standard (Line), the characteristics of the test system can be effectively calibrated. In particular, for the reflection standard, the edge plating process is used to directly connect the signal line of the microstrip line to the bottom metal of the test circuit board, thereby avoiding the parasitic parameter influence caused by the traditional grounding hole, and improving the performance and calibration accuracy of the reflection standard in the high frequency state.

[0073] The microstrip line adopts edge plating process to improve the conductivity: by covering the edge of the circuit board with a layer of metal with excellent conductivity, the conductivity efficiency of the circuit board can be effectively improved, the resistance can be reduced, and the operation of electronic equipment can be smoother and more stable;

[0074] Enhanced corrosion resistance: The electroplating layer can isolate corrosive substances such as moisture, dust, and chemical gases, preventing the edges of the circuit board from being oxidized, thereby extending the service life of the circuit board;

[0075] Improve mechanical strength: The electroplating layer increases the edge thickness and hardness of the circuit board, significantly improving the circuit board's impact resistance and reducing the possibility of deformation and cracking;

[0076] Optimize welding performance: The electroplating layer can enhance the welding performance of the circuit board and ensure the reliability of the welding edge. Especially in the case where the circuit boards need to be connected by welding, the electroplating layer provides more stable and reliable welding conditions;

[0077] Improved heat dissipation: Because the plated edges are metal, they create additional cooling surface area, helping to dissipate heat into the surrounding air and improve the board's ability to dissipate heat;

[0078] Enhanced durability: The electroplated layer can resist wear and scratches, especially in situations where friction and wear are required, such as automotive parts, mechanical parts, etc.

[0079] Prevent electromagnetic interference (EMI): Through edge plating, electromagnetic interference can be effectively suppressed, sensitive circuits can be protected, and the stable operation of the circuit board in a complex electromagnetic environment can be ensured;

[0080] Provide reliable electrical connection: Edge plating ensures reliable electrical connection between the edge of the circuit board and external devices or connectors, suitable for devices with high-frequency signal transmission and low space requirements.

[0081] According to a second aspect of the present application, an electronic device is provided, which adopts the above-mentioned carbon nanotube transistor radio frequency amplifier.

[0082] Through the above embodiments, the carbon nanotube transistor RF amplifier uses carbon-based RF transistors and can be applied to higher frequencies, greatly improving the performance of the amplifier;

[0083] The matching network adopts a broadband matching structure. The series structure of multiple microstrip lines can effectively reduce the quality factor of the input matching, thereby achieving the effect of broadband matching and reducing the loss of the RF signal in the input matching.

[0084] Bias Tee provides DC power supply, providing a simpler and more stable power supply solution. This integrated design reduces the complexity of the test device, reduces the volume, and improves the RF performance and system stability;

[0085] The traditional method of increasing the resonant frequency by simply changing the inductance of the bias circuit is abandoned, and the method of changing the bonding wire parameters is adopted, so that the amplifier is not easily restricted by the low-frequency characteristics of the power amplifier in high-frequency and broadband applications, which helps to improve the bandwidth;

[0086] Ceramic tube shell packaging can effectively isolate the influence of moisture and impurities in the environment, overcome the performance fluctuation problem caused by external environmental factors in the existing technology, and improve the reliability of the RF amplifier in harsh working environment; it can also resist the influence of external impact, vibration and thermal expansion stress, and protect internal precision components from damage. Especially in key components such as gold wire bonding, the ceramic tube shell provides reliable support to prevent the solder joints from loosening or breaking, further improving the service life and reliability of the device.

[0087] It should be noted that the above detailed descriptions are exemplary and are intended to provide further explanation of the present application. Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present application belongs.

[0088] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should also be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0089] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein.

[0090] In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units that are not explicitly listed or inherent to these processes, methods, products, or apparatuses.

[0091] For ease of description, spatially relative terms, such as "above", "above", "on the upper surface of", "above", etc., may be used herein to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" may include both "above" and "below". The device may also be positioned in other different ways, such as rotated 90 degrees or in other orientations, and the spatially relative descriptions used herein are interpreted accordingly.

[0092] In the above detailed description, reference is made to the accompanying drawings, which form a part of this document. In the accompanying drawings, similar symbols typically identify similar components unless the context indicates otherwise. The illustrated embodiments described in the detailed description, drawings, and claims are not meant to be limiting. Other embodiments may be used, and other changes may be made, without departing from the spirit or scope of the subject matter presented herein.

[0093] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A carbon nanotube transistor radio frequency amplifier, characterized in that: It includes an RF input terminal, an input matching network, a carbon-based transistor, an output matching network and an RF output terminal connected in series with a microstrip line. The carbon-based transistor is packaged in a ceramic tube shell. The drain of the carbon-based device wafer in the carbon-based transistor is connected to the ceramic tube shell through a bonding wire for overall grounding. The gate and source of the carbon-based device wafer are respectively led out to pins through bonding wires, and the pins are welded to the amplifier substrate.

2. The carbon nanotube transistor radio frequency amplifier according to claim 1, characterized in that: An input impedance transformation line and an output impedance transformation line are connected to the radio frequency input end and the radio frequency output end respectively.

3. The carbon nanotube transistor radio frequency amplifier according to claim 1, characterized in that: The equivalent inductance of the source, drain and gate of the carbon-based transistor is adjusted by adjusting the parameters of the bonding wire as needed; the parameters include the spacing of the bonding wires, the length of the bonding wires and the height of the bonding wires, and the adjustment is performed using the following formula: Where: Le is the equivalent inductance, k is a constant related to the material and electromagnetic properties, h is the height of the bond wire, l is the effective length of the bond wire, and d is the spacing between the bond wire and other conductors.

4. The carbon nanotube transistor radio frequency amplifier according to claim 3, characterized in that: The height of the bonding wire is 0.4-0.8 mm, the length of the bonding wire is 1-2 mm, and the spacing between the bonding wires is 0.3-0.4 mm.

5. The carbon nanotube transistor radio frequency amplifier according to claim 1, characterized in that: The parameters of the bonding wire are adjusted as needed to adjust the parallel resonant frequency of the carbon-based transistor and the bandwidth of the power amplifier. The parameters include the length and height of the bonding wire. The equivalent inductance is adjusted using the following formula: Where: Le is the equivalent inductance, l is the length of the bonding wire, h is the height between the bonding wire and the ground plane, r is the radius of the bonding wire, and μ0 is the vacuum permeability; The parallel resonant frequency is adjusted using the following formula: Where: f0 is the resonant frequency; C p For the capacitor.

6. The carbon nanotube transistor radio frequency amplifier according to claim 5, characterized in that: The length of the bonding wire is 2 mm, the height of the bonding wire is 0.5 mm, and the capacitance is 2.5 pF.

7. The carbon nanotube transistor radio frequency amplifier according to claim 1, characterized in that: The RF input end is connected with a bias device, and the DC signal and the RF signal are processed by the bias device and then input into the RF input end.

8. The carbon nanotube transistor radio frequency amplifier according to claim 1, characterized in that: The pins connected to the gate are in a ladder-shaped structure.

9. The carbon nanotube transistor radio frequency amplifier according to claim 1, characterized in that: The amplifier substrate is RO4003.

10. An electronic device, characterized in that: A carbon nanotube transistor radio frequency amplifier according to any one of claims 1 to 9 is used.

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