Internally matched power tube

By setting the RLC matching network and internal matching resistor in the internal matching power tube of the microwave power amplifier, the stability problem caused by impedance mismatch of the GaN HEMT device is solved, and stable operation under high power and broadband conditions is achieved.

CN119766171APending Publication Date: 2025-04-04RUISI MICROSYSTEMS (YANTAI) CO LTD
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Patent Information

Application Number
CN202411842326.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-13
Publication Date
2025-04-04

AI Technical Summary

Technical Problem

When GaN HEMT devices have wide bandwidths, they usually cause impedance mismatch and other reasons, causing the microwave power amplifier to not work in a stable state.

Method used

The internal matching power tube is adopted, and the RLC matching network is set up at the input and output ends, and multiple internal matching resistors are used to connect to the die to form an end face, consume the energy of signal imbalance, adjust the signal waveform, and ensure that the amplitude and phase of the signal are kept balanced.

Benefits of technology

It effectively solves the impedance mismatch problem, ensures that the microwave power amplifier operates stably within a wide operating frequency, and avoids mismatch caused by signal imbalance.

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Abstract

The present application provides an internally matched power tube, comprising: a twin core, symmetrically arranged; an input matching network, connected between the input ends of the twin cores, the input matching network comprising a plurality of input matching branches arranged along the input direction of a radio frequency signal, each input matching branch comprising an internal matching resistor connected between the twin cores, each input matching branch being connected to the core by a corresponding internal matching resistor to form an end face; and / or an output matching network, connected between the output ends of the twin cores, the output matching network comprising at least one output matching branch arranged along the output direction of a radio frequency signal, the output matching branch comprising an internal matching resistor connected between the twin cores, each output matching branch being connected to the core by a corresponding internal matching resistor to form an end face.
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Description

Technical Field

[0001] The present application relates to the technical field of power amplifiers, and in particular to an internally matched power tube. Background Art

[0002] As wireless systems such as radar and communications continue to increase their requirements for high power, high reliability and bandwidth in front-end modules, high-power, high-efficiency and wide-bandwidth microwave power amplifiers have become the current research trend. The first-generation semiconductors represented by Ge and Si and the second-generation semiconductors represented by GaAs can no longer fully meet the system's requirements for power amplifiers. The third-generation semiconductor materials represented by GaN have the characteristics of wide bandgap, high electron mobility, high electron saturation rate, high breakdown voltage, high thermal conductivity, good chemical stability and strong radiation resistance. GaN high electron mobility transistor (GaN HEMT) power devices have the advantages of high operating frequency, high power density, high breakdown voltage and high efficiency, and have gradually become ideal devices for current microwave power devices and microwave monolithic integrated circuit applications.

[0003] In recent years, wireless systems have increasingly higher requirements for the output power and bandwidth of microwave power amplifiers. Microwave power amplifiers are an important component of the system's transmission channel, and their performance directly affects whether the entire system can work stably. However, when GaN HEMT devices are at high power and wide bandwidth, the microwave power amplifiers cannot work in a stable state usually due to impedance mismatch and other reasons. Summary of the invention

[0004] In order to solve the existing technical problems, the present application provides an internally matched power tube that can effectively solve impedance mismatch and operate stably within a wider operating frequency range.

[0005] In a first aspect of an embodiment of the present application, an internally matched power tube is provided, comprising:

[0006] The twin tube cores are symmetrically arranged;

[0007] An input matching network connected between the input ends of the twin tube cores, the input matching network comprising a plurality of input matching branches arranged along the input direction of the RF signal, each input matching branch comprising an internal matching resistor connected between the twin tube cores, each input matching branch being connected to the tube core by the corresponding internal matching resistor to form an end face; and / or,

[0008] An output matching network is connected between the output ends of the twin tube cores, and the output matching network includes at least one output matching branch arranged along the output direction of the RF signal, and the output matching branch includes an internal matching resistor connected between the twin tube cores, and each of the output matching branches is connected to the tube core by the corresponding internal matching resistor to form an end face.

[0009] According to a second aspect of an embodiment of the present application, an internally matched power tube is provided, comprising:

[0010] A first high electron mobility transistor is arranged between the radio frequency signal input terminal and the radio frequency signal output terminal;

[0011] a second high electron mobility transistor connected in parallel with the first high electron mobility transistor;

[0012] an input matching network connected between the gate terminals of the first high electron mobility transistor and the second high electron mobility transistor, comprising a plurality of inductors respectively connected in series with the corresponding gate terminals of the first high electron mobility transistor and the second high electron mobility transistor, and RL branches respectively connected with the corresponding inductors to form input matching branches, wherein each of the RL branches is provided with an internal matching resistor;

[0013] An output matching network is connected between the source terminals of the first high electron mobility transistor and the second high electron mobility transistor, and includes a plurality of inductors respectively connected in series with the corresponding source terminals of the first high electron mobility transistor and the second high electron mobility transistor, and RL branches respectively connected with the corresponding inductors to form output matching branches, and each of the RL branches is provided with an internal matching resistor.

[0014] The internal matching power tube provided in the above embodiment includes a symmetrically arranged twin tube core, an input matching network connected between the input ends of the twin tube core, and an output matching network connected between the output ends of the twin tube core. The input matching network is arranged as a plurality of input matching branches arranged along the input direction of the radio frequency signal. Each input matching branch and each output matching branch respectively include an internal matching resistor connected between the twin tube cores. Each internal matching resistor is respectively connected to the corresponding tube core to form an end face. Through the setting of the input matching network, when the radio frequency signal flows into the end face, if the signal phase and amplitude of the two symmetrically arranged radio frequency signals are inconsistent, a voltage difference will appear at both ends of the internal matching resistor, which is unbalanced. The energy can be consumed in the internal matching resistor to adjust the waveform of the input signal of the twin core. When the signal with a frequency point at the output end is unbalanced, the internal matching resistor in the end face formed by the input matching branch can absorb this part of the energy to keep the entire input balanced. Through the setting of the output matching network, the output impedance can be optimized and the waveform of the signal output to the load can be adjusted to keep the amplitude and phase of the signal balanced. When the signal with a frequency point at the load end is unbalanced, the internal matching resistor in the end face formed by the output matching branch can absorb this part of the energy to keep the entire output balanced. During the final power synthesis, there will be no mismatch due to the imbalance of the amplitude and phase of the signal.

[0015] The internal matching power tube provided in the second aspect of the above embodiment is an internal matching power tube described from a different perspective of the circuit topology structure corresponding to the chip structure. The two belong to the same technical concept and have the same technical effect, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 Schematic diagram of the internal structure of the internal matching power tube in the first embodiment.

[0017] Figure 2 for Figure 1 A circuit schematic diagram of the internally matched power tube in the illustrated embodiment.

[0018] Figure 3 for Figure 1 The output characteristic test results of the internally matched power tube in the illustrated embodiment.

[0019] Figure 4 FIG. 1 is a schematic diagram of the internal structure of the matching power tube in the second embodiment.

[0020] Figure 5 for Figure 4 A circuit schematic diagram of the internally matched power tube in the illustrated embodiment.

[0021] Figure 6 FIG. 4 is a schematic diagram of the internal structure of the internal matching power tube in the third embodiment.

[0022] Figure 7 for Figure 6 A circuit schematic diagram of the internal matching power tube of the illustrated embodiment.

[0023] Figure 8 FIG. 4 is a schematic diagram of the internal structure of the internal matching power tube in the fourth embodiment.

[0024] Fig. 9 for Figure 8 A circuit schematic diagram of the internally matched power tube in the illustrated embodiment.

[0025] Fig.10 FIG. 4 is a schematic diagram of the internal structure of the internal matching power tube in the fifth embodiment.

[0026] Fig.11 for Fig.10 A circuit schematic diagram of the internally matched power tube in the illustrated embodiment.

[0027] Fig.12 FIG. 4 is a schematic diagram of the internal structure of the internal matching power tube in the sixth embodiment.

[0028] Fig.13 for Fig.12 A circuit schematic diagram of the internally matched power tube in the illustrated embodiment.

[0029] Fig.14 FIG. 4 is a schematic diagram of the internal structure of the internal matching power tube in the seventh embodiment.

[0030] Fig.15 for Fig.14 A circuit schematic diagram of the internally matched power tube in the illustrated embodiment. DETAILED DESCRIPTION

[0031] The technical solution of the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0032] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings. The described embodiments should not be regarded as limiting the present application. All other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of this application.

[0033] In the following description, the expression "some embodiments" is involved, which describes a subset of all possible embodiments. It should be noted that "some embodiments" may be the same subset or different subsets of all possible embodiments, and may be combined with each other without conflict.

[0034] It should also be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may also be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "inside", "outside", "left", "right" and similar expressions used herein are only for the purpose of explanation in conjunction with the embodiments of the accompanying drawings and do not represent the only implementation method.

[0035] As the wireless system has higher and higher requirements for the output power and bandwidth of microwave power amplifiers, microwave power amplifiers are an important part of the transmission channel of the wireless system, and their performance directly affects whether the entire system can work stably. In the study on how to solve the problem that when GaN HEMT devices are at high power and wide bandwidth, the microwave power amplifier cannot work in a stable state due to impedance mismatch and other reasons, the inventors of this application proposed a technical idea of ​​using RLC matching networks for the input and output ends of the power tube, respectively, setting multiple internal matching resistors arranged along the input direction of the RF signal in the input matching network, and setting internal matching resistors arranged along the output direction of the RF signal in the output matching network, each internal matching resistor is connected to the tube core to form an end face, so that the internal matching resistor can be used to consume the unbalanced part of the signal at the input end of the frequency point, and the internal matching resistor can be used to consume the unbalanced part of the signal at the load end of the frequency point, so that the amplitude and phase imbalance of the signal can be better eliminated, and the mismatch phenomenon can be eliminated. The technical solution embodiment based on the above technical idea is described as follows.

[0036] See also Figures 1 to 3 , an internal matching power tube provided for the first embodiment of the present application, comprising: a twin core D, symmetrically arranged; an input matching network 20, connected between the input ends of the twin core D, the input matching network 20 comprising a plurality of input matching branches arranged along the input direction of the RF signal, each input matching branch comprising an internal matching resistor connected between the twin cores D, each input matching branch being connected to the core D by a corresponding internal matching resistor to form an end face; and / or, an output matching network 30, connected between the output ends of the twin core D, the output matching network 30 comprising at least one output matching branch arranged along the output direction of the RF signal, the output matching branch comprising an internal matching resistor connected between the twin cores D, each output matching branch being connected to the core D by a corresponding internal matching resistor to form an end face.

[0037] Among them, the twin tube cores D are arranged in parallel and symmetrically up and down. Each tube core D has the same input and output matching, and is also arranged in parallel and symmetrically up and down. There is an internal matching resistor connecting the two.

[0038] It should be noted that the upper and lower Figure 1 The orientation shown is for reference only, indicating the relative position of the twin dies D on the same substrate. This is a directional limitation introduced for ease of understanding and description, and is not the only limitation on the relative position of the twin dies in the internally matched power tube. Figure 1The orientation shown is for reference only. The input tube shell and the output tube shell of the internal matching power tube are located on the left and right sides of the substrate respectively. The input matching network 20 and the output matching network 30 can be fully integrated on the substrate, or the input matching branch connected between the input tube shells and the output matching branch connected between the output tube shells can be integrated on the tube shells, while the other input matching branches and output matching branches in the input matching network 20 and the output matching network 30 are integrated on the substrate.

[0039] The end face usually refers to the surface of the power tube. The internal matching resistors in each input matching branch are connected to the tube core D and can be equivalently regarded as the end face of the input end of the power tube. In the input direction of the RF signal, the RF signal flows to the input end of the power tube through the input matching network 20, and flows through the end faces formed by each input matching branch respectively. The unbalanced energy is consumed by the internal matching resistors in each end face, so that the entire input remains balanced. The internal matching resistors in each output matching branch are connected to the tube core D and can be equivalently regarded as the end face of the output end of the power tube. In the output direction of the RF signal, the RF signal flows to the load through the output matching network 30, and flows through the end faces formed by each output matching branch respectively. The unbalanced energy at the load end is consumed by the internal matching resistors in each end face, so that the entire output remains balanced.

[0040] Among them, the twin core D refers to the high electron mobility transistor (HEMT) core, and the circuit topology corresponding to the internal matching power tube is as follows: Figure 2 As shown, in the circuit topology, the input end of the twin core D refers to the gate end of the two electron mobility transistors, the output end refers to the source end of the two electron mobility transistors, and the internal matching power tube includes:

[0041] A first high electron mobility transistor is arranged between the radio frequency signal input terminal and the radio frequency signal output terminal;

[0042] a second high electron mobility transistor connected in parallel with the first high electron mobility transistor;

[0043] an input matching network connected between the gate terminals of the first high electron mobility transistor and the second high electron mobility transistor, comprising a plurality of inductors respectively connected in series with the corresponding gate terminals of the first high electron mobility transistor and the second high electron mobility transistor, and RL branches respectively connected with the corresponding inductors to form input matching branches, wherein each of the RL branches is provided with an internal matching resistor;

[0044] An output matching network is connected between the source terminals of the first high electron mobility transistor and the second high electron mobility transistor, and includes a plurality of inductors respectively connected in series with the corresponding source terminals of the first high electron mobility transistor and the second high electron mobility transistor, and RL branches respectively connected with the corresponding inductors to form output matching branches, and each of the RL branches is provided with an internal matching resistor.

[0045] The RL branch refers to a branch formed by the internal matching resistor and the inductor in the corresponding input matching branch in series. In the circuit topology corresponding to the internal matching power tube, in the input matching network 20, the corresponding internal matching resistor in each input matching branch is connected between the input terminals of the two electron mobility transistors after forming the RL branch; and in the output matching network 30, the corresponding internal matching resistor in each output matching branch is connected between the output terminals of the two electron mobility transistors after forming the RL branch.

[0046] In the above embodiment, the internal matching power tube is configured with the input matching network 20. When the RF signal flows into the end face, if the signal phase and amplitude of the two RF signals symmetrically arranged at the upper and lower ends are inconsistent, a voltage difference will appear at both ends of the internal matching resistor. The unbalanced energy can be consumed on the internal matching resistor to adjust the waveform of the input signal of the twin tube core D. When there is a signal imbalance at the output end with a frequency point, the internal matching resistor in the end face formed by each input matching branch can absorb this part of the energy to keep the entire input balanced. By configuring the output matching network 30, the output impedance can be optimized, and the signal waveform output to the load can be adjusted to keep the amplitude and phase of the signal balanced. When there is a signal imbalance at the load end with a frequency point, the internal matching resistor in the end face formed by the output matching branch can absorb this part of the energy to keep the entire output balanced. During the final power synthesis, there will be no mismatch due to the imbalance of the amplitude and phase of the signal.

[0047] In some embodiments, the gate end of each tube core D is provided with a first inductor L1 and a second inductor L2 connected in series, and an input tube core capacitor C1 connected between the node between the first inductor L1 and the second inductor L2 and the electrode ground; the input matching branch includes a first input matching branch 21 connected between the input tube shells, a second input matching branch 22 connected between the input tube core capacitors C1, and a third input matching branch 23 connected between the gate ends of the twin tube cores D. The first input matching branch 21, the second input matching branch 22 and the third input matching branch 23 are arranged in sequence along the input direction of the RF signal.

[0048] Among them, the gate end of the tube core D forms an LC matching network through the input tube shell capacitor C8, the first inductor L1, the input tube core capacitor C1 and the second inductor L2, and the upper and lower tube cores D, the input tube shell capacitor C8, the input tube core capacitor C1 and the gate end of the tube core D are connected through internal matching resistors and inductors respectively to form an RLC matching network. In the input direction of the RF signal, the first input matching branch 21 connected between the input tube shells, the second input matching branch 22 connected between the input tube core capacitors C1, and the third input matching branch 23 connected between the gate ends can consume the RF signal in the inflow path three times of unbalanced energy, adjust the waveform of the input signal of the two tube cores D, so that the amplitude and phase of the signal remain balanced.

[0049] In some embodiments, the first input matching branch 21 is one of the following:

[0050] The first input matching branch 21 includes a first internal matching resistor R1 and a fourth inductor L4 connecting the first internal matching resistor R1 and the input shell capacitor C8;

[0051] The first input matching branch 21 includes a first internal matching resistor R1 welded to the input tube shell, wherein the first internal matching resistor R1 is connected to the lead of the corresponding input tube shell through the fourth inductor L4 or both ends of the first internal matching resistor R1 are respectively connected to the lead of the input tube shell.

[0052] See also Figures 1 to 10 In the embodiment shown, the first input matching branch 21 is composed of a first internal matching resistor R1, a fourth inductor L4 and an input shell capacitor C8 to form an RLC circuit. The input shell capacitor C8 can be made of a dielectric constant ceramic with a dielectric constant of 20. The fourth inductor L4 can be made of a gold wire to connect the first internal matching resistor R1 to the input shell capacitor C8. Fig.12 In the first input matching branch 21, the first internal matching resistor R1 can be welded to the input tube shell. After welding, one end of the first internal matching resistor R1 is connected to the input tube shell capacitor C8 through the fourth inductor L4, or, please refer to Fig.14 The first internal matching resistor R1 can be directly prepared between the leads of the input tube shell through the tube shell preparation process, and the tube shell leads are electrically connected through the first internal matching resistor R1. Wherein, directly welding the first internal matching resistor R1 on the tube shell can reduce the blocking effect of the inductance connecting the first internal matching resistor R1 and the corresponding input tube shell capacitor C8 on the unbalanced RF signal.

[0053] The working principle of the input end RLC of the power tube, from the perspective of the end face, the first input matching branch 21 formed by the input tube shell capacitor C8, the first internal matching resistor R1 and the fourth inductor L4, or the first input matching branch 21 formed by the input tube shell capacitor C8 and the first internal matching resistor R1 can be regarded as an end face. When the RF signal flows into the end face, if the phase and amplitude of the symmetrical upper and lower RF signals are inconsistent, a potential difference will appear at both ends of the first internal matching resistor R1, so as to consume the unbalanced energy through the first internal matching resistor R1, so as to improve the signal waveform entering the subsequent link.

[0054] In some embodiments, the second input matching branch 22 is one of the following:

[0055] The second input matching branch 22 includes a second internal matching resistor R2 and a fifth inductor L5 connecting the second internal matching resistor R2 and the input core capacitor C1;

[0056] The second input matching branch 22 includes second internal matching resistors R2 respectively connected to the input die capacitors C1 of the twin die D, and a fifth inductor L5 connected between the second internal matching resistors R2 .

[0057] See also Figures 1 to 3 , Figure 6 and 7 ,as well as Figures 10 to 15 In the embodiment shown, the second input matching branch 22 is composed of a second inner matching resistor R2, a fifth inductor L5 and an input core capacitor C1 to form an RLC circuit. The second inner matching resistor R2 can be a thin film resistor, and the fifth inductor L5 can be made of gold wire, connecting the second inner matching resistor R2 to the pad of the input core capacitor C1.

[0058] Please refer to 4 and 5. Figure 8 and 9 In the illustrated embodiment, in the second input matching branch 22, the second inner matching resistor R2 can be integrated with the input tube core capacitor C1, and the two second inner matching resistors R2 are connected via a fifth inductor L5. By integrating the second inner matching resistor R2 with the input tube core capacitor C1 of the corresponding tube core D, the process flow can be simplified, the consistency of the power tube device can be improved, and the cost can be reduced.

[0059] Optionally, the input tube core capacitor C1 is a ceramic capacitor, one end of each second internal matching resistor R2 is integrated with the ceramic capacitor, and the other end is connected to the tube core D pad; the second internal matching resistors R2 are electrically connected through gold wires. The fifth inductor L5 connecting the internal matching resistor and the corresponding tube core D capacitor in the second input matching branch 22 is made of gold wire, which can simplify the process and improve the consistency of the power tube device.

[0060] In some embodiments, the third input matching branch 23 is one of the following:

[0061] The third input matching branch 23 includes a third internal matching resistor R3 and a sixth inductor L6 connecting the third internal matching resistor to the gate terminal of the twin die D;

[0062] The third input matching branch 23 includes third internal matching resistors R3 respectively connected to the chip gate terminals of the dual-cell die D, and a sixth inductor L6 connected between the third internal matching resistors R3.

[0063] See also Figures 1 to 9 , Figures 12 to 15 In the embodiment shown, the third input matching branch 23 is connected to the gate terminal of the corresponding tube core D by the third internal matching resistor R3 and the sixth inductor L6. Figures 10 to 11 In the illustrated embodiment, in the third input matching branch 23, the third internal matching resistor R3 is integrated into the chip corresponding to the tube core D through microelectronic processing technology, which can simplify the process flow, improve the consistency of power tube devices, and reduce costs.

[0064] Optionally, one end of the third internal matching resistor R3 is connected to the gate pad of the corresponding tube core D, and the other end is a metal pad; the metal pads of the third internal matching resistor R3 are electrically connected through a gold wire. The third internal matching resistors R3 are welded to the chip of the tube core D through pad welding, and the metal pads of the two third internal matching resistors R3 with symmetrical structures are electrically connected to the gate pads of the two tube cores D through gold wires, which improves the stability of the power tube device and is conducive to improving the consistency of the power tube device.

[0065] In some embodiments, a third inductor L3 is disposed at the drain end of each die D; the output matching branch includes a first output matching branch 31 connected between the drain ends of the twin dies D, and a second output matching branch 32 connected between the output shells.

[0066] Among them, the drain end of the tube core D forms an LC matching network through the third inductor L3 and the output tube shell capacitor C9, and the upper and lower tube cores D, the drain ends of the tube core D, and the output tube shell capacitor C9 are connected through internal matching resistors and inductors respectively to form an RLC matching network.

[0067] At the output end of the power tube, in the output direction of the RF signal, the first output matching branch 31 connected between the drain ends of the tube core D and the second output matching branch 32 connected between the output tube shell capacitors C9 can form multiple unbalanced energy consumption in the outflow path of the RF signal flowing to the load, and adjust the waveform of the output signal of the two tube cores D so that the amplitude and phase of the signal remain balanced.

[0068] In some embodiments, the first output matching branch 31 is one of the following:

[0069] The first output matching branch 31 includes a fourth internal matching resistor R4 and a seventh inductor L7 connecting the fourth internal matching resistor R4 to the drain terminal of the twin die D;

[0070] The first output matching branch 31 includes a fourth internal matching resistor R4 integratedly connected to the chip drain terminal of the twin die D, and a seventh inductor L7 connected between the fourth internal matching resistors R4.

[0071] See also Figures 1 to 9 , Figures 12 to 15 The first output matching branch 31 is connected to the drain terminal of the tube core D by the fourth internal matching resistor R4 and the seventh inductor L7. The fourth internal matching resistor R4 is made of a thin film resistor, and the seventh inductor L7 is made of a gold wire. The fourth internal matching resistor R4 is connected to the corresponding drain terminal of the tube core D through the gold wire.

[0072] See also Figures 10 to 11 In the first output matching branch 31, the fourth internal matching resistor R4 can be integrated in the chip corresponding to the tube core D, and the fourth internal matching resistor R4 is welded and connected to the drain pad of the corresponding tube core D. The metal pads of the two symmetrically structured fourth internal matching resistors R4 are electrically connected to the drain pads of the two tube cores D through gold wires, which can optimize the output impedance, improve the stability of the power tube device, and is beneficial to improving the consistency of the power tube device.

[0073] In some embodiments, the second output matching branch 32 is one of the following:

[0074] The second output matching branch 32 includes a fifth internal matching resistor R5 and an eighth inductor L8 connecting the fifth internal matching resistor R5 to the output tube shell of the twin tube die D;

[0075] The second output matching branch 32 includes a fifth internal matching resistor R5 welded to the output tube shell, wherein the fifth internal matching resistor R5 is connected to the lead of the corresponding output tube shell through the eighth inductor L8 or both ends of the fifth internal matching resistor R5 are respectively connected to the lead of the output tube shell.

[0076] See also Figures 1 to 10 In the embodiment shown, the second output matching branch 32 is composed of a fifth internal matching resistor R5, an eighth inductor L8 and an output tube shell capacitor C9 to form an RLC circuit. The output tube shell capacitor C9 can be made of a dielectric constant ceramic with a dielectric constant of 20, and the eighth inductor L8 can be made of a gold wire to connect the fifth internal matching resistor R5 and the output tube shell capacitor C9. Fig.12 In the second output matching branch 32, the fifth internal matching resistor R5 can be welded to the output tube shell, and after welding, one end of the fifth internal matching resistor R5 is connected to the output tube shell capacitor C9 through the eighth inductor L8, or, please refer to Fig.14The fifth internal matching resistor R5 can be prepared between the leads of the output tube shell through the tube shell preparation process, and the tube shell leads are directly electrically connected through the fifth internal matching resistor R5. Wherein, the fifth internal matching resistor R5 is directly welded on the tube shell, which can reduce the blocking effect of the inductance connecting the fifth internal matching resistor R5 and the corresponding output tube shell capacitor C9 on the unbalanced RF signal.

[0077] It should be noted that the setting of the internal matching resistors in the first input matching branch 21 connected between the input tube shells in the input matching network 20 and the second output matching branch 32 connected between the output tube shells in the output matching network 30 can adopt a left-right symmetrical structure to further improve the consistency of the power tube devices.

[0078] In some embodiments, the drain end of each tube core D also includes a tenth inductor connected in series with the third inductor L3, and an output tube core capacitor C10 connected between the node of the third inductor L3 and the tenth inductor and the electrode ground; the output matching branch also includes a third output matching branch 33 connected between the output tube core capacitors C10, and the third output matching branch 33 includes a sixth internal matching resistor R6 connected to the corresponding output tube core capacitor C10, and a ninth inductor L9 connected between the sixth internal matching resistors R6. Among them, at the drain end of the tube core D, a tenth inductor and an output tube core capacitor C10 are further added between the third inductor L3 and the output tube shell capacitor C9, so that an LC matching network of the third inductor L3, the output tube core capacitor C10, the tenth inductor, and the output tube shell capacitor C9 is formed at the drain end of the tube core D, and a third output matching branch 33 connected to the output tube core capacitor C10 is further arranged between the upper and lower tube cores D. In this way, the output matching network 30 forms three unbalanced energy consumptions for the RF signal in the outflow path flowing to the load through the first output matching branch 31, the third output matching branch 33 and the second output matching branch 32, and adjusts the waveform of the output signal of the two tube cores D so that the amplitude and phase of the signal remain balanced.

[0079] See also Figures 6 to 9 In the third output matching branch 33, the sixth internal matching resistor R6 can be formed into an integrated structure with the corresponding output core capacitor C10, and the two sixth internal matching resistors R6 of the symmetrical structure are connected through the ninth inductor L9. In a specific example, the sixth internal matching resistor R6 is directly integrated with the ceramic output core capacitor C10, one end of the sixth internal matching resistor R6 is directly connected to the output core capacitor C10, and the other end is formed as a metal pad, and the metal pads of the two sixth internal matching resistors R6 of the symmetrical structure are connected through the ninth inductor L9.

[0080] Among them, the setting of the output tube core capacitor C10 can increase the output impedance of the power tube and reduce the Q value, thereby making it easier to achieve broadband power output and play a role in impedance matching. The introduction of the tenth inductor can play a role in circuit connection and impedance matching.

[0081] Among them, in the embodiment of the present application, the internal matching resistors in each input matching branch in the input matching network 20 and each output matching branch in the output matching network 30 can all be thin film resistors; in each input matching branch and the output matching network 30, the inductor connecting the internal matching resistor to the corresponding tube core D can be made of gold wire, which can further optimize the input and output impedance matching, improve stability, and improve the self-excitation phenomenon of the power tube caused by signal imbalance.

[0082] In an optional specific example, the power tube refers to a broadband high-power GaN internally matched power tube. The input matching network 20 and the output matching network 30 provided in the embodiment of the present application are particularly suitable for the input and output ends of the GaN HEMT device, so as to better solve the problem that the microwave power amplifier cannot operate in a stable state due to impedance mismatch and other reasons when the GaN HEMT device has high power and wide bandwidth.

[0083] Thus, the power tube provided in the embodiment of the present application has at least the following characteristics:

[0084] First, the input matching network 20 uses an RLC circuit for matching. The gate end of the power tube includes an input tube shell capacitor C8, a first inductor L1, an input tube core capacitor C1, and a second inductor L2 to form an LC matching network. Between the upper and lower tube cells, the input tube shell capacitor C8 is connected through a first input matching branch 21 including a first internal matching resistor R1, and the input tube core capacitor C1 is connected through a second input matching branch 22 including a second internal matching resistor R2. The gate end of the tube core D is connected through a third input matching branch 23 including a third internal matching resistor R3, wherein the inductors are all made of gold wire, the capacitors are made of ceramics with a preset dielectric constant, and the internal matching resistors are thin film resistors. Through this input matching network 20, the stability of the power tube device is improved, and the waveforms of the input signals of the two tube cores D are adjusted to keep the amplitude and phase of the signal balanced. When the signal with a frequency point at the input end is unbalanced, the internal matching resistors in each input matching branch can absorb this part of the energy to keep the entire input balanced.

[0085] Second, the output matching network 30 uses an RLC circuit for matching, and the drain end of the power tube includes a third inductor L3 and an output tube shell capacitor C9 to form an LC matching network, or the drain end of the power tube is connected to the first output matching branch 31 including a fourth internal matching resistor R4, and the output tube shell capacitors C9 are connected to each other through a second output matching branch 32 including a fifth internal matching resistor R5. For the embodiment with the output tube core capacitor C10, The output tube core capacitors C10 are connected through a third output matching branch 33 including a sixth internal matching resistor R6, wherein the inductors are made of gold wire, the capacitors are made of ceramics with a preset dielectric constant, and the internal matching resistors are thin film resistors. Through this output matching network 30, the output impedance can be optimized, the stability of the power tube device can be improved, and the waveform of the signal output by the power tube to the load can be adjusted to keep the amplitude and phase of the signal balanced. When the signal with a frequency point at the load end is unbalanced, the internal matching resistors in each input matching branch can absorb this part of the energy to keep the entire output balanced.

[0086] Third, in the design of the input matching network 20 and the output matching network 30, the internal matching resistors in the input matching branch between the input tube shell capacitors C8 and the output matching branch between the output tube shell capacitors C9 can be directly prepared on the tube shell, which can further reduce the blocking effect of the inductor on the unbalanced RF signal, help the internal matching resistor to absorb the unbalanced RF signal, and can also save packaging costs and improve efficiency.

[0087] Fourth, in the design of the input matching network 20 and the output matching network 30, the internal matching resistors in the input matching branch between the gate terminals of the tube core D and the output matching branch between the drain terminals can be directly integrated on the chip of the tube core D, which can further simplify the process flow, improve the consistency of the power tube devices, and reduce costs.

[0088] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0089] The above are only specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. An internally matched power tube, characterized in that: include: The twin tube cores are symmetrically arranged; An input matching network connected between the input ends of the twin tube cores, the input matching network comprising a plurality of input matching branches arranged along the input direction of the radio frequency signal, each input matching branch comprising an internal matching resistor connected between the twin tube cores, and each input matching branch is connected to the tube core by the corresponding internal matching resistor to form an end face; and / or, An output matching network is connected between the output ends of the twin tube cores, and the output matching network includes at least one output matching branch arranged along the output direction of the RF signal, and the output matching branch includes an internal matching resistor connected between the twin tube cores, and each of the output matching branches is connected to the tube core by the corresponding internal matching resistor to form an end face.

2. The internally matched power tube according to claim 1, characterized in that: The gate end of each tube core is provided with a first inductor and a second inductor connected in series, and an input tube core capacitor connected between a node between the first inductor and the second inductor and an electrode ground; The input matching branch includes a first input matching branch connected between the input tube shells, a second input matching branch connected between the input tube core capacitors, and a third input matching branch connected between the gate ends of the twin tube cores. The first input matching branch, the second input matching branch and the third input matching branch are arranged in sequence along the input direction of the RF signal.

3. The internally matched power tube according to claim 2, characterized in that: The first input matching branch is one of the following: The first input matching branch includes a first internal matching resistor and a fourth inductor connecting the first internal matching resistor and the input shell capacitor; The first input matching branch includes a first internal matching resistor welded to the input tube shell, wherein the first internal matching resistor is connected to the lead corresponding to the input tube shell through a fourth inductor or both ends of the first internal matching resistor are respectively connected to the leads of the input tube shell.

4. The internally matched power tube according to claim 2, characterized in that: The second input matching branch is one of the following: The second input matching branch includes a second internal matching resistor and a fifth inductor connecting the second internal matching resistor and the input core capacitor; The second input matching branch includes second internal matching resistors respectively connected to the input die capacitors of the twin die, and a fifth inductor connected between the second internal matching resistors.

5. The internally matched power tube according to claim 4, characterized in that: The input tube core capacitor is a ceramic capacitor, one end of each of the second internal matching resistors is integrated with the ceramic capacitor, and the other end is connected to the tube core pad; The second internal matching resistors are electrically connected via gold wires.

6. The internally matched power tube according to claim 2, characterized in that: The third input matching branch is one of the following: The third input matching branch includes a third internal matching resistor and a sixth inductor connecting the three internal matching resistors to the gate terminal of the twin core; The third input matching branch includes third internal matching resistors respectively connected to the chip gate terminals of the twin-cell die, and a sixth inductor connected between the third internal matching resistors.

7. The internally matched power tube according to claim 6, characterized in that: One end of the third internal matching resistor is connected to the gate pad of the corresponding tube core, and the other end is a metal pad; The metal pads of the third internal matching resistor are electrically connected via a gold wire.

8. The internally matched power tube according to claim 1, characterized in that: A third inductor is provided at the drain end of each tube core; The output matching branch includes a first output matching branch connected between the drain ends of the twin tube cores, and a second output matching branch connected between the output tube shells.

9. The internally matched power tube according to claim 8, characterized in that: The first output matching branch is one of the following: The first output matching branch includes a fourth internal matching resistor and a seventh inductor connecting the fourth internal matching resistor to the drain terminal of the twin die; The first output matching branch includes a fourth internal matching resistor integratedly connected to the chip drain terminal of the twin die, and a seventh inductor connected between the fourth internal matching resistors; and / or, The second output matching branch is one of the following: The second output matching branch includes a fifth internal matching resistor and an eighth inductor connecting the fifth internal matching resistor to the output tube shell of the twin tube die; The second output matching branch includes a fifth internal matching resistor welded to the output tube shell, wherein the fifth internal matching resistor is connected to the lead corresponding to the output tube shell through an eighth inductor or both ends of the fifth internal matching resistor are respectively connected to the leads of the output tube shell.

10. An internally matched power tube, characterized in that: include: A first high electron mobility transistor is arranged between the radio frequency signal input terminal and the radio frequency signal output terminal; a second high electron mobility transistor connected in parallel with the first high electron mobility transistor; an input matching network connected between the gate terminals of the first high electron mobility transistor and the second high electron mobility transistor, comprising a plurality of inductors respectively connected in series with the corresponding gate terminals of the first high electron mobility transistor and the second high electron mobility transistor, and RL branches respectively connected with the corresponding inductors to form input matching branches, wherein each of the RL branches is provided with an internal matching resistor; An output matching network is connected between the source terminals of the first high electron mobility transistor and the second high electron mobility transistor, and includes a plurality of inductors respectively connected in series with the corresponding source terminals of the first high electron mobility transistor and the second high electron mobility transistor, and RL branches respectively connected with the corresponding inductors to form output matching branches, and each of the RL branches is provided with an internal matching resistor.