Semiconductor device, method for manufacturing the same, and electronic apparatus

Abstract

The present invention relates to the technical field of semiconductor devices. To solve the problem of limited application scenarios of semiconductor devices, a semiconductor device, a manufacturing method thereof, and an electronic device are proposed. The method includes: completing the source-drain ohmic and gate metal fabrication of a GaAs MMIC active device and forming a passivation protection layer; defining a filter region and depositing a multi-layer metal structure of Mo / AlNSc / Mo by stacking; in the filter region, forming a bottom electrode, a piezoelectric layer, and a top electrode by using photolithography and etching processes to form a BAW structure; depositing a dielectric isolation layer; performing a first metal wiring on the front side to form a passivation protection layer; and completing the backside process. The present invention can achieve heterogeneous monolithic integration of a GaAs MMIC radio frequency circuit and a BAW structure filter based on AlN material, so that signal amplification and filtering conditioning can be realized on a single-chip circuit, providing a high-integration process solution for high-performance semiconductor devices.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and particularly relates to a manufacturing method of a semiconductor device, a semiconductor device and an electronic device. Background Art

[0002] GaAs (gallium arsenide) MMIC (Monolithic Microwave Integrated Circuit) has a high electron mobility, and has great advantages in terms of frequency, gain and efficiency. It has high temperature resistance, low noise and strong radiation resistance, and is suitable for low-noise amplifiers, switches and logic control integrated chips. However, it does not have a filtering function, which limits its application in some systems with high performance requirements.

[0003] Therefore, how to provide a high-performance GaAs MMIC semiconductor device and broaden the application scenarios of a single GaAs MMIC has become a technical problem that needs to be solved urgently at present. Summary of the Invention

[0004] In order to solve the above technical problems, the present invention provides a semiconductor device, its manufacturing method and an electronic device, which can realize the heterogeneous monolithic integration of a GaAs MMIC radio frequency circuit and a BAW (Bulk Acoustic Wave) structure filter based on an AlN (aluminum nitride) material, so that signal amplification and filtering conditioning can be realized on a single-chip circuit, and a high-integration process solution is provided for high-performance semiconductor devices.

[0005] The technical solution adopted by the present invention is as follows:

[0006] A first aspect embodiment of the present invention provides a manufacturing method of a semiconductor device, including the following steps: fabricating the source-drain ohmic metal and gate metal of a GaAs MMIC active device and forming a passivation protection layer to obtain a first semi-finished product; defining a filter region on the first semi-finished product, and laminating and depositing a multi-layer metal structure of Mo / AlNSc / Mo to obtain a second semi-finished product, wherein the passivation protection layer etched in the filter region stops on the GaAs epitaxial layer, and AlNSc is AlN (aluminum nitride) doped with Sc (scandium); in the filter region, a bottom electrode, a piezoelectric layer and a top electrode are formed by photolithography and etching processes to form a BAW structure; depositing a dielectric isolation layer to cover the entire front area of the wafer to obtain a third semi-finished product; performing a first metal wiring on the front of the third semi-finished product to form a passivation protection layer to obtain a fourth semi-finished product; completing the back process of the fourth semi-finished product to form a semiconductor device integrating a GaAs MMIC and an AlNSc BAW filter.

[0007] The manufacturing method of the semiconductor device of the present invention further has the following additional technical features:

[0008] According to an embodiment of the present invention, a passivation protection layer of silicon nitride is formed by using a PECVD (Plasma Enhanced Chemical Vapor Deposition) thin film process.

[0009] According to an embodiment of the present invention, a multi-layer metal structure of Mo / AlNSc / Mo is formed by using a PVD (Physical Vapor Deposition) process.

[0010] According to an embodiment of the present invention, in the filter region, a bottom electrode, a piezoelectric layer, and a top electrode are formed by using photolithography and etching processes to form a BAW structure, including: protecting a first region in the filter region with a photoresist, forming the upper electrode and part of the piezoelectric layer of the BAW structure by using photolithography and etching to obtain; protecting a second region in the filter region with a photoresist, forming the bottom electrode of the BAW structure by using photolithography and etching, wherein the first region is included in the second region; stripping the photoresist to form the BAW structure.

[0011] According to an embodiment of the present invention, a dielectric isolation layer of SiO2 is deposited by using a PECVD process.

[0012] According to an embodiment of the present invention, after obtaining the fourth semi-finished product, it further includes: integrating passive devices on the front surface of the fourth semi-finished product; performing secondary metal wiring.

[0013] According to an embodiment of the present invention, the back process of the fourth semi-finished product is completed, including: thinning the thickness of the GaAs wafer; using a back dry etching process to simultaneously perform back hole etching on the GaAs HEMT (High Electron Mobility Transistor) region and the filter region, and stopping the etching at the metal layer; using a double-sided photolithography technique to protect the back part of the filter region with a photoresist; exposing the GaAs HEMT region, depositing and electroplating a back metal seed layer to form a back ground metal layer; stripping the back photoresist and removing the front protection dummy (referring to a semiconductor component or structure without a function).

[0014] According to an embodiment of the present invention, the thickness of the GaAs wafer is thinned to 100 um.

[0015] An embodiment of the second aspect of the present invention proposes a semiconductor device manufactured based on the manufacturing method of the semiconductor device described in the first aspect embodiment of the present invention.

[0016] A third aspect embodiment of the present invention provides an electronic device, including the semiconductor device described in the second aspect embodiment of the present invention.

[0017] Advantages of the present invention:

[0018] The manufacturing method of the semiconductor device proposed by the present invention can realize the heterogeneous monolithic integration of GaAs MMIC radio frequency circuits and BAW structure filters based on AlN materials, so as to realize the amplification and filtering conditioning of signals on a single-chip circuit, providing a high-integration process solution for high-performance semiconductor devices, and having broad application prospects in mobile communication, satellite communication, wireless communication, radar systems and sensor systems.

[0019] AlN deposited by the PVD process can achieve a better electromechanical coupling coefficient after doping with Sc, which is more beneficial for manufacturing filter devices based on AlN materials. Description of the drawings

[0020] Figure 1 is a flowchart of a manufacturing method of a semiconductor device according to an embodiment of the present invention;

[0021] Figure 2 is a schematic diagram of a first semi-finished product according to an embodiment of the present invention;

[0022] Figure 3 is a schematic diagram of a second semi-finished product according to an embodiment of the present invention;

[0023] Figure 4 is a schematic diagram of the formation of the upper electrode and the piezoelectric layer of the BAW structure according to an embodiment of the present invention;

[0024] Figure 5 is a schematic diagram of the formation of the bottom electrode of the BAW structure according to an embodiment of the present invention;

[0025] Figure 6 is a schematic diagram of the BAW structure according to an embodiment of the present invention;

[0026] Figure 7 is a schematic diagram of a third semi-finished product according to an embodiment of the present invention;

[0027] Figure 8 is a schematic diagram of the first metal wiring on the front side of the third semi-finished product according to an embodiment of the present invention;

[0028] Figure 9 is a schematic diagram of a fourth semi-finished product according to an embodiment of the present invention;

[0029] Figure 10Schematic diagram of the first backside process of the fourth semi-finished product according to an embodiment of the present invention;

[0030] Figure 11 Schematic diagram of the second backside process of the fourth semi-finished product according to an embodiment of the present invention;

[0031] Figure 12 Schematic diagram of the finished semiconductor device according to an embodiment of the present invention. Detailed implementation manners

[0032] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. The same filling in the figures represents the same material. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0033] Figure 1 Flowchart of the manufacturing method of the semiconductor device according to an embodiment of the present invention, as Figure 1 shown, the manufacturing method includes the following steps:

[0034] S1, complete the source-drain ohmic metal and gate metal fabrication of the GaAs MMIC active device and form a passivation protection layer to obtain the first semi-finished product.

[0035] In a specific embodiment of the present invention, a passivation protection layer of silicon nitride is formed by the PECVD thin film process.

[0036] Specifically, as Figure 2 shown, complete the front process of the GaAs MMIC to the source ohmic metal 11, drain ohmic metal 12 and gate metal 13 of the active device, and form a passivation protection layer 2 of typical silicon nitride (SiNx) by the PECVD thin film process. The passivation protection layer can be formed by multiple thin film depositions to obtain the first semi-finished product. The GaAs MMIC epitaxial layer 10 adopts a typical heterojunction epitaxial structure of GaAs / GaAlAs / GaAs.

[0037] S2, define the filter region on the first semi-finished product, and stack and deposit a multi-layer metal structure of Mo / AlNSc / Mo to obtain the second semi-finished product, wherein the passivation protection layer etched in the filter region stops on the GaAs epitaxial layer, and AlNSc is AlN doped with Sc.

[0038] Furthermore, according to an embodiment of the present invention, a multi-layer metal structure of Mo / AlNSc / Mo is formed by the PVD process.

[0039] Specifically, asFigure 3 As shown, a filter region 3 is defined, and then a multi-layer metal structure (31, 32, and 33) of a typical Mo / AlNSc / Mo is formed by PVD process to obtain a second semi-finished product. In the multi-layer metal structure, the upper Mo serves as the top electrode 31, the middle AlNSc serves as the piezoelectric layer 32, and the lower Mo serves as the bottom electrode 33 to obtain the second semi-finished product. Among them, AlNSc is AlN doped with Sc, and the Sc content is about 20%.

[0040] S3. In the filter region, a bottom electrode, a piezoelectric layer, and a top electrode are formed by photolithography and etching processes to form a BAW structure.

[0041] Furthermore, in an embodiment of the present invention, in the filter region, a bottom electrode, a piezoelectric layer, and a top electrode are formed by photolithography and etching processes to form a BAW structure, including: protecting a first region in the filter region with a photoresist, and forming the top electrode and a part of the piezoelectric layer of the BAW structure by photolithography and etching; protecting a second region in the filter region with a photoresist, and forming the bottom electrode of the BAW structure by photolithography and etching, where the first region is included in the second region; stripping the photoresist to form the BAW structure.

[0042] Specifically, as Figure 4 shown, a first region in the filter region 3 is protected with a photoresist 4, and the top electrode 31 and a part of the piezoelectric layer 32 of the BAW structure are formed by photolithography and etching. Then, as Figure 5 shown, a second region in the filter region 3 is protected with a photoresist, and the bottom electrode 33 of the BAW structure is formed by photolithography and etching. Among them, the first region is included in the second region. Then, the photoresist is stripped to form the Figure 6 BAW structure shown in

[0043] S4. A dielectric isolation layer is deposited to cover the entire front region of the wafer to obtain a third semi-finished product.

[0044] In an embodiment of the present invention, a dielectric isolation layer 5 of SiO2 is deposited by PECVD process to cover the entire front region of the wafer to form a third semi-finished product as Figure 7 shown.

[0045] S5. One-time metal wiring is performed on the front of the third semi-finished product to form a passivation protection layer to obtain a fourth semi-finished product.

[0046] Furthermore, according to an embodiment of the present invention, after obtaining the fourth semi-finished product, it further includes: integrating passive devices on the front of the fourth semi-finished product; performing secondary metal wiring.

[0047] Specifically, as Figure 8As shown, a metal wiring is completed on the front side of the third semi-finished product. A metal wiring 6 is carried out in the source-drain ohmic metal, gate metal regions, and the bottom electrode 33 and top electrode 31 regions of the BAW structure to achieve good electrical contact and wiring. The metal type is a stacked metal of Ti / Ni / Au. Then, a silicon nitride passivation protection layer 2 of typical SiNx is formed by the PECVD thin film process to obtain Figure 9 the fourth semi-finished product shown. Subsequently, passive devices such as thin film resistors and metal capacitors can be integrated according to application requirements, and then secondary metal wiring, tertiary metal wiring, etc. can be carried out. The metal wiring can use a typical air bridge structure or a dielectric bridge structure.

[0048] S6, complete the backside process of the fourth semi-finished product to form a semiconductor device integrating a GaAs MMIC and an AlNSc BAW filter.

[0049] Furthermore, according to an embodiment of the present invention, the backside process of the fourth semi-finished product is completed, including: thinning the thickness of the GaAs wafer; using a backside dry etching process to simultaneously perform back hole etching on the GaAs HEMT region and the filter region, and the etching stops at the metal layer; using a double-sided lithography technique to protect the backside part of the filter region with photoresist; the GaAs HEMT region is exposed, and a backside metal seed layer is deposited and electroplated to form a backside ground metal layer; stripping the backside photoresist and removing the front-side protection dummy.

[0050] Specifically, after completing the front-side process, it enters the typical backside process of GaAs compounds: as Figure 10 shown, first thin the thickness of the GaAs wafer, for example, thin the GaAs wafer thickness to 100 um, and then use a backside dry etching process to simultaneously achieve back hole etching on the GaAs HEMT region and the filter region, and the etching stops at the metal layer. Then, as Figure 11 shown, use a double-sided lithography technique to protect the backside part of the filter region with photoresist 4, the GaAs HEMT region is exposed, and a backside metal seed layer is deposited and electroplated to form a backside ground metal layer 7. Finally, as Figure 12 shown, strip the backside photoresist and remove the front-side protection dummy to complete the backside process of the fourth semi-finished product and form Figure 12 the semiconductor device integrating a GaAs MMIC and an AlNSc BAW filter shown. A dummy in a chip refers to a semiconductor element or structure without a function, usually used to fill the unused regions in the chip to ensure that the structures and performances of other parts can be maintained.

[0051] Figure 12Shown is a schematic diagram of the integration of a high-performance back cavity structure AlNSc BAW filter and a MMIC device with a GaAs HEMT as the core device. The secondary or tertiary wiring on the front side is not shown, providing a highly integrated process solution for next-generation high-performance radio frequency signal amplification and filtering.

[0052] The manufacturing method of the above semiconductor device of the present invention realizes the heterogeneous monolithic integration of a GaAs MMIC radio frequency circuit and a BAW structure filter based on AlN material, thereby realizing the conditioning of signal amplification and filtering on a single-chip circuit, and having broad application potential in the following fields:

[0053] Mobile communication: It can be used in smartphones and other mobile devices to provide better signal processing and spectral efficiency;

[0054] Satellite and wireless communication: In satellite communication and wireless networks, it can provide the required high-frequency and high-power performance while minimizing size and power consumption;

[0055] Radar and sensor systems: It can be used in radar and sensor systems to provide high-precision signal detection and processing capabilities.

[0056] In summary, according to the manufacturing method of the semiconductor device of the embodiments of the present invention, the heterogeneous monolithic integration of a GaAs MMIC radio frequency circuit and a BAW structure filter based on AlN material can be realized, thereby realizing the amplification and filtering conditioning of signals on a single-chip circuit, providing a highly integrated process solution for high-performance semiconductor devices, and having broad application prospects in mobile communication, satellite communication, wireless communication, radar systems, and sensor systems; AlN deposited by the PVD process can achieve a better electromechanical coupling coefficient after doping with Sc, which is more conducive to the manufacture of filter devices based on AlN material.

[0057] In addition, the present invention also proposes a semiconductor device manufactured based on the manufacturing method of the above semiconductor device of the present invention.

[0058] The semiconductor device according to the embodiments of the present invention, manufactured by using the manufacturing method of the above semiconductor device, can realize the heterogeneous monolithic integration of a GaAs MMIC radio frequency circuit and a BAW structure filter based on AlN material, thereby realizing the amplification and filtering conditioning of signals on a single-chip circuit, providing a highly integrated process solution for high-performance semiconductor devices, and having broad application prospects in mobile communication, satellite communication, wireless communication, radar systems, and sensor systems; AlN deposited by the PVD process can achieve a better electromechanical coupling coefficient after doping with Sc, which is more conducive to the manufacture of filter devices based on AlN material.

[0059] In addition, the present invention also provides an electronic device, including the semiconductor device of the present invention described above.

[0060] For the electronic device according to an embodiment of the present invention, by adopting the above semiconductor device, heterogeneous monolithic integration of a GaAs MMIC radio frequency circuit and a BAW structure filter based on an AlN material can be realized, so that signal amplification and filtering conditioning can be achieved on a single-chip circuit, providing a highly integrated process solution for high-performance semiconductor devices, and having broad application prospects in mobile communication, satellite communication, wireless communication, radar systems and sensor systems; for the AlN deposited by the PVD process, after doping with Sc, a better electromechanical coupling coefficient can be achieved, which is more beneficial to the manufacture of filter devices based on the AlN material.

[0061] In the description of the present invention, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. The meaning of "a plurality" is two or more, unless otherwise specifically defined.

[0062] In the present invention, unless otherwise clearly specified and defined, terms such as "mounted", "connected", "coupled", "fixed", etc. shall be construed in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the internal communication of two components or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0063] In the present invention, unless otherwise clearly specified and defined, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on top of" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "beneath" and "underneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0064] In the description of this specification, the descriptions referring to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc., mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0065] Any process or method description represented in a flowchart or described in other ways herein can be understood to represent a module, segment, or portion of code including one or more executable instructions for implementing a specific logical function or process. And the scope of the preferred embodiments of the present invention includes additional implementations, where the functions can be executed in a manner other than shown or discussed, including in a substantially simultaneous manner according to the functions involved or in a reverse order, which should be understood by those skilled in the art to which the embodiments of the present invention pertain.

[0066] The logic and / or steps represented in a flowchart or described in other ways herein, for example, can be considered as a sequenced list of executable instructions for implementing a logical function, and can be specifically implemented in any computer-readable medium for use by an instruction execution system, apparatus, or device (such as a computer-based system, a system including a processor, or other systems that can fetch and execute instructions from the instruction execution system, apparatus, or device), or in connection with these instruction execution systems, apparatuses, or devices. For the purposes of this specification, a "computer-readable medium" can be any device that can contain, store, communicate, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device. More specific examples (non-exhaustive list) of computer-readable media include the following: an electrical connection portion having one or more wirings (electronic device), a portable computer diskette (magnetic device), a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). Additionally, the computer-readable medium can even be paper or other suitable media on which the program can be printed, because the program can be obtained electronically, for example, by optically scanning the paper or other media, followed by editing, interpretation, or other suitable processing as necessary, and then stored in a computer memory.

[0067] It should be understood that various parts of the present invention can be implemented by hardware, software, firmware, or a combination thereof. In the above embodiments, multiple steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented by hardware, as in another embodiment, any one or a combination of the following techniques well known in the art can be used: discrete logic circuits having logic gate circuits for implementing logical functions on data signals, application specific integrated circuits having appropriate combinational logic gate circuits, programmable gate arrays (PGAs), field programmable gate arrays (FPGAs), etc.

[0068] Those of ordinary skill in the art can understand that all or part of the steps carried by the method of the above embodiments can be completed by instructing relevant hardware through a program, and the program can be stored in a computer-readable storage medium. When the program is executed, it includes one or a combination of the steps of the method embodiments.

[0069] In addition, each functional unit in various embodiments of the present invention can be integrated into a processing module, or each unit can exist physically alone, or two or more units can be integrated into one module. The above integrated module can be implemented in the form of hardware or in the form of a software functional module. When the above integrated module is implemented in the form of a software functional module and sold or used as an independent product, it can also be stored in a computer-readable storage medium.

[0070] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those of ordinary skill in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present invention.

Claims

1. A method for manufacturing a semiconductor device, characterized in that: The following steps are involved: The source and drain ohmic metal and gate metal of the GaAs MMIC active device are fabricated and a passivation protection layer is formed to obtain a first semi-finished product; A filter region is defined on the first semi-finished product, and a multilayer metal structure of Mo / AlNSc / Mo is deposited in layers to obtain a second semi-finished product, wherein the passivation protection layer etched in the filter region stops on the GaAs epitaxial layer, and AlNSc is AlN doped with Sc; In the filter area, a bottom electrode, a piezoelectric layer, and a top electrode are formed by photolithography and etching processes to form a BAW structure; Depositing a dielectric isolation layer to cover the entire front area of ​​the wafer to obtain a third semi-finished product; Performing a primary metal wiring on the front side of the third semi-finished product to form a passivation protection layer to obtain a fourth semi-finished product; The fourth semi-finished product backside process is completed to form a semiconductor device integrating GaAs MMIC and AlNSc BAW filter; A bottom electrode, a piezoelectric layer and an upper top electrode are formed by photolithography and etching processes to form a BAW structure, including: using photoresist to protect the first area in the filter area, and using photolithography and etching to form the upper electrode and piezoelectric layer part of the BAW structure; using photoresist to protect the second area in the filter area, and using photolithography and etching to form the bottom electrode of the BAW structure, wherein the first area is included in the second area; stripping the photoresist to form the BAW structure.

2. The method for manufacturing a semiconductor device according to claim 1, wherein: The PECVD thin film process is used to form a passivation protective layer of silicon nitride.

3. The method for manufacturing a semiconductor device according to claim 1, wherein: The multilayer metal structure of Mo / AlNSc / Mo is formed by PVD process.

4. The method for manufacturing a semiconductor device according to claim 1, wherein: The dielectric isolation layer of SiO2 is deposited by PECVD process.

5. The method for manufacturing a semiconductor device according to claim 1, wherein: After obtaining the fourth semi-finished product, it also includes: Integrating passive components on the front side of the fourth semi-finished product; Perform secondary metal wiring.

6. The method for manufacturing a semiconductor device according to claim 1, wherein: The fourth semi-finished product back side process is completed, including: Thinning GaAs wafer thickness; The backside dry etching process is used to simultaneously perform backhole etching in the GaAs HEMT area and the filter area, and the etching stops at the metal layer; Double-sided photolithography is used to protect the back side of the filter area with photoresist; The GaAs HEMT area is exposed, and a back metal seed layer is deposited and electroplated to form a back grounding metal layer; Strip the backside photoresist and remove the front side protective dummy.

7. The method for manufacturing a semiconductor device according to claim 6, wherein: Thinning GaAs wafer to 100um thickness.

8. A semiconductor device, characterized in that: The semiconductor device is manufactured according to the method for manufacturing a semiconductor device according to any one of claims 1 to 7.

9. An electronic device, characterized in that: Comprising the semiconductor device according to claim 8.

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