Hexagonal boron nitride-based complementary resistance switch structure and preparation method thereof

Abstract

The invention provides a complementary resistance switch structure based on hexagonal boron nitride and a preparation method thereof, and can be applied to the technical field of memristors. The structure comprises a substrate; the electrode layer is located above the substrate and comprises a first electrode layer, a second electrode layer and a third electrode layer, the first electrode layer and the third electrode layer are electrically connected with an external circuit, and the potential of the first electrode layer and the potential of the third electrode layer change along with the change of received bias voltage signals input by the external circuit; the resistance switch layer comprises a first resistance switch layer, and the first resistance switch layer is located between the first electrode layer and the second electrode layer; wherein the substrate, the electrode layers and the resistance switch layer are at least partially overlapped in space, and the on-off state of the resistance switch layer is switched by adjusting the potential difference between the first electrode layer and the third electrode layer; the resistance switch layer is made of hexagonal boron nitride, and the thickness of the first resistance switch layer and the thickness of the second resistance switch layer are 0.5 nm to 10 nm.

Description

Technical Field

[0001] The present disclosure relates to the technical field of memristors, and more specifically, to a complementary resistance switch structure based on hexagonal boron nitride and a preparation method thereof. Background Art

[0002] Due to the sneak current problem in the cross-memristor array, the size of the array is limited. Therefore, a large-scale cross-memristor array can be realized by using complementary resistor switches with a large switching ratio, which is more suitable for applications in the fields of in-memory computing, artificial intelligence, and big data processing.

[0003] However, in the process of realizing the concept of the present disclosure, the inventors found that it is difficult to realize a small-sized large-switching-ratio complementary resistance switch in the related art. Summary of the invention

[0004] In view of this, the present disclosure provides a complementary resistance switch structure based on hexagonal boron nitride and a preparation method thereof.

[0005] One aspect of the present disclosure provides a complementary resistance switch structure based on hexagonal boron nitride, comprising:

[0006] A substrate; an electrode layer located above the substrate, comprising a first electrode layer, a second electrode layer and a third electrode layer, wherein the first electrode layer and the third electrode layer are electrically connected to an external circuit, and the potentials of the first electrode layer and the third electrode layer change with the bias voltage signal received from the external circuit input; a resistance switching layer, comprising a first resistance switching layer, wherein the first resistance switching layer is located between the first electrode layer and the second electrode layer; wherein the substrate, the electrode layer and the resistance switching layer are at least partially overlapped in space, and the switching state of the resistance switching layer is switched by adjusting the potential difference between the first electrode layer and the third electrode layer; the material of the resistance switching layer comprises hexagonal boron nitride, and the thickness of the resistance switching layer is 0.5nm~10nm.

[0007] According to an embodiment of the present disclosure, the first electrode layer and the third electrode layer are located side by side on the same side of the first resistance switch layer.

[0008] According to an embodiment of the present disclosure, the resistance switching layer further includes: a second resistance switching layer located between the second electrode layer and the third electrode layer.

[0009] According to an embodiment of the present disclosure, the switching state includes on and off, and the switching state of the resistance switching layer is switched by adjusting the potential difference between the first electrode layer and the third electrode layer, including: when the potential of the third electrode layer is higher than the potential of the first electrode layer and the potential difference between the third electrode layer and the first electrode layer is greater than a first threshold value, the resistance of the first resistance switching layer decreases until the first resistance switching layer is turned on, and the resistance of the second resistance switching layer increases until the second switch resistance layer is turned off; when the potential of the first electrode layer is higher than the potential of the third electrode layer and the potential difference between the first electrode layer and the third electrode layer is greater than a second threshold value, the resistance of the second resistance switching layer decreases until the second resistance switching layer is turned on, and the resistance of the first resistance switching layer increases until the first resistance switching layer is turned off.

[0010] According to an embodiment of the present disclosure, the switching state of the first resistance switching layer and the switching state of the second resistance switching layer are obtained according to the following steps: performing voltage scanning on the first electrode layer and the third electrode layer according to a predetermined voltage interval to obtain current data of the first electrode layer or the current data of the third electrode layer; determining the switching state of the first resistance switching layer and the switching state of the second resistance switching layer according to the current data of the first electrode layer or the current data of the third electrode layer.

[0011] According to an embodiment of the present disclosure, the switching state of the first resistance switching layer and the switching state of the second resistance switching layer are obtained according to the following steps: applying a first test bias voltage to the second electrode layer and the third electrode layer to obtain first current data flowing through the second electrode layer and the third electrode layer; applying a second test bias voltage to the second electrode layer and the first electrode layer to obtain second current data flowing through the second electrode layer and the first electrode layer; determining the resistance value of the first resistance switching layer and the resistance value of the second resistance switching layer based on the first current data and the second current data; determining the switching state of the first resistance switching layer and the switching state of the second resistance switching layer based on the resistance value of the first resistance switching layer and the resistance value of the second resistance switching layer.

[0012] According to an embodiment of the present disclosure, the above structure also includes: an isolation layer, located between the substrate and each electrode layer adjacent to the substrate, the isolation layer covers the overlapping area between the substrate and each electrode layer adjacent to the substrate, and the material of the isolation layer includes one of the following: hafnium dioxide, hexagonal boron nitride, and silicon oxide.

[0013] Another aspect of the present disclosure provides a method for preparing a complementary resistance switch structure based on hexagonal boron nitride, comprising:

[0014] Using electron beam exposure and electron beam evaporation technology, an electrode layer is formed on the substrate;

[0015] forming a resistive switching layer above the electrode layer;

[0016] Continue to form the remaining electrode layers above the resistance switch layer;

[0017] Wherein, the material of the resistance switch layer includes hexagonal boron nitride.

[0018] According to an embodiment of the present disclosure, forming a resistance switching layer above an electrode layer includes: using a chemical vapor deposition method or a mechanical stripping method to generate a resistance switching layer whose material is hexagonal boron nitride on the electrode layer.

[0019] Another aspect of the present disclosure provides a memristor array, comprising:

[0020] The above-mentioned complementary resistance switch structure based on hexagonal boron nitride.

[0021] According to the embodiments of the present disclosure, a bias voltage signal is applied to the first electrode layer and the third electrode layer by an external circuit to adjust the potential of the first electrode layer and the third electrode layer, thereby changing the switching state of the resistance switch layer to realize non-volatile storage of the resistance value. The present disclosure adopts hexagonal boron nitride as the material of the resistance switch layer, so that the threshold voltage required for switching the switching state of the resistance switch layer is small, and the switching ratio of the device is improved, which is conducive to the realization of a large-scale cross-memristor array. At the same time, the thickness of the resistance switch layer is ensured to be only 0.5nm~10nm. Therefore, relative to the complementary resistance switch of the related technology, the thickness of the resistance switch layer is reduced, and the size of the device is compressed, which is conducive to reducing the chip area of ​​the three-dimensional integration of the memristor array. In addition, the two-dimensional hexagonal boron nitride has a certain ductility and can be suitable for flexible application scenarios such as wearables. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The above and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0023] Figure 1a A front view of a hexagonal boron nitride-based complementary resistance switch structure according to an embodiment of the present disclosure is schematically shown.

[0024] Figure 1b A front view of a complementary resistance switch structure based on hexagonal boron nitride according to another embodiment of the present disclosure is schematically shown.

[0025] Figure 2 A top view of a complementary resistance switch structure based on hexagonal boron nitride according to an embodiment of the present disclosure is schematically shown.

[0026] Figure 3 A front view of a complementary resistance switch structure based on hexagonal boron nitride according to yet another embodiment of the present disclosure is schematically shown.

[0027] Figure 4aA front view of a complementary resistance switch structure based on hexagonal boron nitride according to yet another embodiment of the present disclosure is schematically shown.

[0028] Figure 4b A top view of a complementary resistance switch structure based on hexagonal boron nitride according to yet another embodiment of the present disclosure is schematically shown.

[0029] Figure 5 A front view of a hexagonal boron nitride-based complementary resistance switch structure including an isolation layer according to an embodiment of the present disclosure is schematically shown.

[0030] Figure 6 The voltage-current curve of the hexagonal boron nitride-based complementary resistance switch according to an embodiment of the present disclosure is schematically shown.

[0031] Figure 7 A schematic diagram showing a comparison between the switching ratio and the threshold voltage ratio of the complementary resistance switch structure based on hexagonal boron nitride in the embodiment of the present disclosure and the complementary resistance switch of the resistance switch layer of other materials is schematically shown.

[0032] Figure 8 The flowchart of the method for preparing a complementary resistance switch structure based on hexagonal boron nitride according to an embodiment of the present disclosure is schematically shown.

[0033] Fig. 9 The schematic diagram shows a preparation process of a complementary resistance switch structure based on hexagonal boron nitride according to an embodiment of the present disclosure.

[0034] Fig.10 The figure schematically shows a schematic diagram of the preparation process of a complementary resistance switch structure based on hexagonal boron nitride according to another embodiment of the present disclosure.

[0035] Fig.11 A block diagram of a memristor array according to an embodiment of the present disclosure is schematically shown. DETAILED DESCRIPTION

[0036] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present disclosure. In the following detailed description, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0037] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise", "include", etc. used herein indicate the existence of features, steps, operations and / or components, but do not exclude the existence or addition of one or more other features, steps, operations or components.

[0038] All terms (including technical and scientific terms) used herein have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0039] When using expressions such as "at least one of A, B, and C, etc.", they should generally be interpreted according to the meaning of the expression commonly understood by those skilled in the art (for example, "a system having at least one of A, B, and C" should include but is not limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc.).

[0040] Complementary resistance switches use two high resistance states to store data, which greatly suppresses the error coding and reading caused by the sneak path problem in the memristor crossbar array, and improves the reliability and size limit of the array. This passive non-volatile device unit helps reduce system energy consumption and has great potential in fields such as artificial intelligence and big data processing.

[0041] In the process of implementing the present disclosure, it is found that hexagonal boron nitride has the advantages of high thermal conductivity, high insulation, and ultra-thin thickness. In view of this, the embodiment of the present disclosure provides a complementary resistance switch structure based on hexagonal boron nitride, including:

[0042] A substrate; an electrode layer located above the substrate, comprising a first electrode layer, a second electrode layer and a third electrode layer, wherein the first electrode layer and the third electrode layer are electrically connected to an external circuit, and the potentials of the first electrode layer and the third electrode layer change with the bias voltage signal received from the external circuit input; a resistance switching layer, comprising a first resistance switching layer, wherein the first resistance switching layer is located between the first electrode layer and the second electrode layer; wherein the substrate, the electrode layer and the resistance switching layer are at least partially overlapped in space, and the switching state of the resistance switching layer is switched by adjusting the potential difference between the first electrode layer and the third electrode layer; the material of the resistance switching layer comprises hexagonal boron nitride, and the thickness of the resistance switching layer is 0.5nm~10nm.

[0043] Figure 1a A front view of a hexagonal boron nitride-based complementary resistance switch structure according to an embodiment of the present disclosure is schematically shown.

[0044] like Figure 1a As shown, taking a single-layer resistance switching layer as an example, the structure 100 includes a substrate 110 , a first electrode layer 121 , a second electrode layer 122 , a third electrode layer 123 , a first resistance switching layer 131 and an external circuit 140 .

[0045] According to the embodiments of the present disclosure, the material of the substrate 110 may be a flexible substrate, a SiC substrate, a silicon oxide wafer, or a diamond substrate, but it is necessary to ensure that there is no leakage between the complementary resistance switch based on hexagonal boron nitride and the substrate.

[0046] According to an embodiment of the present disclosure, the material of the electrode layer may be a conductive material, including one of the following: gold, chromium, titanium, titanium nitride, and graphene.

[0047] According to an embodiment of the present disclosure, the first electrode layer 121 and the third electrode layer 123 are electrically connected to the external circuit 140 , and the potentials of the first electrode layer 121 and the third electrode layer 123 vary with the bias voltage signal received from the external circuit 140 .

[0048] According to an embodiment of the present disclosure, the substrate, electrode layer and resistance switch layer are at least partially overlapped in space. To save space, the area of ​​each layer can be minimized while ensuring the overlap, and the layers can be stacked vertically.

[0049] According to an embodiment of the present disclosure, hexagonal boron nitride (h-BN) is used as the material of the resistance switch layer, and the interaction between the resistance switch layer and the electrode layer determines the characteristics of the volatile and non-volatile switches.

[0050] According to an embodiment of the present disclosure, the first resistance switching layer can be divided into two sub-layers, the first sub-layer is located between the first electrode layer and the second electrode layer, and is used to isolate the first electrode layer and the second electrode layer, and the second sub-layer is located between the third electrode layer and the second electrode layer, and is used to isolate the third electrode layer and the second electrode layer.

[0051] Figure 1b A front view of a complementary resistance switch structure based on hexagonal boron nitride according to another embodiment of the present disclosure is schematically shown.

[0052] like Figure 1b As shown, the structure 100 includes a substrate 110 , a first electrode layer 121 , a second electrode layer 122 , and a third electrode layer 123 , a first sublayer 131 ( 1 ) and a second sublayer 131 ( 2 ).

[0053] To better understand the above structure 110, the following will be Figure 2 A top view of the structure 100 is provided for better explanation.

[0054] Figure 2A top view of a complementary resistance switch structure based on hexagonal boron nitride according to an embodiment of the present disclosure is schematically shown.

[0055] like Figure 2 As shown, the top view of the structure 100 can reflect the overlapping areas of the substrate, the electrode layer and the resistance switch layer in space, namely the first overlapping area 210 and the second overlapping area 220. For the first resistance switch layer 131, only the first overlapping area 210 and the second overlapping area 220 can switch the switch state, and the remaining areas remain insulated. By switching the switch state of the first overlapping area 210 and the second overlapping area 220, an opposite switch state of one on and one off can be formed to serve as the storage state of the complementary resistance switch.

[0056] According to the embodiments of the present disclosure, a bias voltage signal is applied to the first electrode layer and the third electrode layer by an external circuit to adjust the potential of the first electrode layer and the third electrode layer, thereby changing the switching state of the resistance switch layer to achieve non-volatile storage of the resistance value. In addition, hexagonal boron nitride is used as the material of the resistance switch layer, so that the threshold voltage required for switching the switching state of the resistance switch layer is small, and the switching ratio of the device is improved, which is conducive to the realization of a large-scale cross-memristor array. At the same time, the thickness of the resistance switch layer is ensured to be only 0.5nm~10nm. Therefore, relative to the complementary resistance switch of the related technology, the thickness of the resistance switch layer is reduced, and the size of the device is compressed, which is conducive to reducing the chip area of ​​the three-dimensional integrated memristor array. The two-dimensional hexagonal boron nitride has a certain ductility and can be suitable for flexible application scenarios such as wearables.

[0057] According to an embodiment of the present disclosure, the first electrode layer and the third electrode layer are located side by side on the same side of the first resistance switch layer.

[0058] Figure 3 A front view of a complementary resistance switch structure based on hexagonal boron nitride according to yet another embodiment of the present disclosure is schematically shown.

[0059] like Figure 3 As shown, the structure 300 includes a substrate 310 , a first electrode layer 321 , a second electrode layer 322 , a third electrode layer 323 , and a first resistance switch layer 331 .

[0060] According to an embodiment of the present disclosure, in the case of a single-layer resistance switch layer, it is only necessary to ensure that the two electrode layers receiving the bias voltage signal input by the external circuit are located on the same side of the first resistance switch layer, and the other electrode layer is located on the other side of the first resistance switch layer.

[0061] According to the embodiments of the present disclosure, the first electrode layer and the third electrode layer are located on the same side of the first resistance switching layer, thereby merging the two resistance switching layers in the related art, which is beneficial to simplifying the preparation process, improving device symmetry and thus improving device performance.

[0062] According to an embodiment of the present disclosure, the resistance switching layer further includes: a second resistance switching layer located between the second electrode layer and the third electrode layer.

[0063] According to the embodiment of the present disclosure, the first electrode layer, the second electrode layer and the third electrode layer may be isolated in sequence by the first resistance switching layer and the second resistance switching layer.

[0064] Figure 4a A front view of a complementary resistance switch structure based on hexagonal boron nitride according to yet another embodiment of the present disclosure is schematically shown.

[0065] like Figure 4a As shown, the structure 400 includes a substrate 410 , a first electrode layer 421 , a second electrode layer 422 , a third electrode layer 423 , a first resistance switch layer 431 , and a second resistance switch resistance layer 432 .

[0066] According to an embodiment of the present disclosure, the switching states of the first resistance switch layer 431 and the second resistance switch layer 432 are adjusted by a bias voltage signal of an external circuit, thereby realizing a complementary resistance switch function.

[0067] Figure 4b A top view of a complementary resistance switch structure based on hexagonal boron nitride according to yet another embodiment of the present disclosure is schematically shown.

[0068] like Figure 4b As shown, the top view of the structure 400 corresponds to the front view.

[0069] According to an embodiment of the present disclosure, the above structure also includes: an isolation layer, located between the substrate and each electrode layer adjacent to the substrate, the isolation layer covers the overlapping area between the substrate and each electrode layer adjacent to the substrate, and the material of the isolation layer includes one of the following: hafnium dioxide, hexagonal boron nitride, and silicon oxide.

[0070] Taking the structure of three electrode layers and two resistance switch layers shown in the above structure 400 as an example, Figure 5 The positional relationship between the isolation layer and the electrode layer is further explained.

[0071] Figure 5 A front view of a hexagonal boron nitride-based complementary resistance switch structure including an isolation layer according to an embodiment of the present disclosure is schematically shown.

[0072] like Figure 5As shown, the structure 500 includes a substrate 510 , an isolation layer 540 , a first electrode layer 521 , a second electrode layer 522 , a third electrode layer 523 , a first resistance switch layer 531 , and a second resistance switch resistance layer 532 .

[0073] According to the embodiments of the present disclosure, an isolation layer is placed between the substrate and the bottom electrode layer, which can effectively prevent leakage and ensure electrical insulation between the first electrode layer and the substrate. The shape of the isolation layer is not limited, but it needs to cover the overlapping area of ​​the substrate and the electrode layer. The isolation layer can be an insulating material such as hafnium dioxide, hexagonal boron nitride, silicon oxide, etc.

[0074] According to an embodiment of the present disclosure, the switching state includes on and off, and the switching state of the resistance switching layer is switched by adjusting the potential difference between the first electrode layer and the third electrode layer, including: when the potential of the third electrode layer is higher than the potential of the first electrode layer and the potential difference between the third electrode layer and the first electrode layer is greater than a first threshold value, the resistance of the first resistance switching layer decreases until the first resistance switching layer is turned on, and the resistance of the second resistance switching layer increases until the second switch resistance layer is turned off; when the potential of the first electrode layer is higher than the potential of the third electrode layer and the potential difference between the first electrode layer and the third electrode layer is greater than a second threshold value, the resistance of the second resistance switching layer decreases until the second resistance switching layer is turned on, and the resistance of the first resistance switching layer increases until the first resistance switching layer is turned off.

[0075] According to an embodiment of the present disclosure, in the case of a single-layer resistance switching layer, the first overlapping region is equivalent to the first resistance switching layer, and the second overlapping region is equivalent to the second resistance switching layer, which will not be elaborated herein.

[0076] Figure 6 The voltage-current curve of the hexagonal boron nitride-based complementary resistance switch according to an embodiment of the present disclosure is schematically shown.

[0077] like Figure 6 As shown in the figure, the horizontal axis is voltage and the vertical axis is current. By applying different voltages, the current of the complementary resistance switch changes accordingly.

[0078] According to an embodiment of the present disclosure, a bias voltage signal is applied to the first electrode layer and the third electrode layer through an external circuit to adjust the potential of the two electrode layers. When the potential difference reaches different thresholds, the first resistance switching layer and the second resistance switching layer can be switched to different resistance values, thereby realizing multi-level storage of multiple switching states.

[0079] According to an embodiment of the present disclosure, the switching state of the first resistance switching layer and the switching state of the second resistance switching layer are obtained according to the following steps: performing voltage scanning on the first electrode layer and the third electrode layer according to a predetermined voltage interval to obtain current data of the first electrode layer or the current data of the third electrode layer; determining the switching state of the first resistance switching layer and the switching state of the second resistance switching layer according to the current data of the first electrode layer or the current data of the third electrode layer.

[0080] According to an embodiment of the present disclosure, the range of the predetermined voltage interval includes a first threshold value and a second threshold value. Through voltage scanning, the current data passing through the first electrode layer and the current data passing through the third electrode layer are measured, and the switching state of the resistance switching layer is determined based on whether there is a sudden change in the current. The collected current data can also be integrated into a volt-ampere characteristic curve, and the resistance value of the first resistance switching layer and the resistance value of the second resistance switching layer are determined based on the curve.

[0081] For example, when there is a sudden increase in current, it indicates that the corresponding resistance switch resistance layer changes from a high resistance state to a low resistance state, that is, the switch state changes from cut-off to on.

[0082] According to an embodiment of the present disclosure, the switching state of the first resistance switching layer and the switching state of the second resistance switching layer are obtained according to the following steps: applying a first test bias voltage to the second electrode layer and the third electrode layer to obtain first current data flowing through the second electrode layer and the third electrode layer; applying a second test bias voltage to the second electrode layer and the first electrode layer to obtain second current data flowing through the second electrode layer and the first electrode layer; determining the resistance value of the first resistance switching layer and the resistance value of the second resistance switching layer based on the first current data and the second current data; determining the switching state of the first resistance switching layer and the switching state of the second resistance switching layer based on the resistance value of the first resistance switching layer and the resistance value of the second resistance switching layer.

[0083] According to an embodiment of the present disclosure, the current data of the electrode layer can be read by applying a bias voltage without performing a voltage scan.

[0084] According to an embodiment of the present disclosure, when a first test bias voltage is applied to the second electrode layer and the third electrode layer, the current flowing through the second electrode layer and the third electrode layer is equal, so the current of the second electrode layer or the current of the third electrode layer can be read to obtain the first current data.

[0085] According to an embodiment of the present disclosure, when a second test bias voltage is applied to the second electrode layer and the first electrode layer, the current flowing through the second electrode layer and the first electrode layer is equal, so the current of the second electrode layer or the current of the first electrode layer can be read to obtain second current data.

[0086] According to an embodiment of the present disclosure, Ohm's law is used to determine the resistance of the first resistance switch layer and the resistance of the second resistance switch layer according to the first current data and the second current data, thereby determining the switch state.

[0087] In order to better reflect that the complementary resistance switch structure based on hexagonal boron nitride has a larger switching ratio than the resistance switch layer of other materials, the following will be Figure 7 The switching ratios of the resistive switching layers of different materials are compared.

[0088] Figure 7 A schematic diagram showing a comparison between the switching ratio and the threshold voltage ratio of the complementary resistance switch structure based on hexagonal boron nitride in the embodiment of the present disclosure and the complementary resistance switch of the resistance switch layer of other materials is schematically shown.

[0089] like Figure 7 As shown, by comparison, compared with complementary resistance switches made of other materials, the complementary resistance switch based on hexagonal boron nitride has a relatively small threshold voltage and a relatively large switch, which is conducive to the realization of large-scale cross-memristor arrays.

[0090] Figure 8 The flowchart of the method for preparing a complementary resistance switch structure based on hexagonal boron nitride according to an embodiment of the present disclosure is schematically shown.

[0091] like Figure 8 As shown, the method 800 includes operations S810 to S830.

[0092] In operation S810, an electrode layer is formed on a substrate using electron beam exposure and electron beam evaporation techniques.

[0093] In operation S820, a resistance switching layer is formed over the electrode layer.

[0094] In operation S830 , remaining electrode layers are continuously formed over the resistance switching layer.

[0095] According to an embodiment of the present disclosure, for the complementary resistance switch structure of the above embodiment 400, the specific preparation process can be as follows: Fig. 9 To give a hint.

[0096] Fig. 9 The schematic diagram shows a preparation process of a complementary resistance switch structure based on hexagonal boron nitride according to an embodiment of the present disclosure.

[0097] like Fig. 9As shown, a first electrode layer is formed on a substrate by electron beam exposure and electron beam evaporation, a second resistance switching layer is formed on the first electrode layer by CVD (chemical vapor deposition) or mechanical stripping, a second electrode layer is formed on the second resistance switching layer by electron beam exposure and electron beam evaporation, and it is required that the first electrode layer and the second electrode layer at least partially overlap in space, a first resistance switching layer is formed on the second electrode layer by CVD or mechanical stripping, and a third electrode layer is formed on the first resistance switching layer by electron beam exposure and electron beam evaporation.

[0098] According to the embodiments of the present disclosure, for the complementary resistance switch structure of the above embodiment 100, the specific preparation process can be as follows: Fig.10 To give a hint.

[0099] Fig.10 The figure schematically shows a schematic diagram of the preparation process of a complementary resistance switch structure based on hexagonal boron nitride according to another embodiment of the present disclosure.

[0100] like Fig.10 As shown, a second electrode layer is formed on a substrate by electron beam exposure and electron beam evaporation, a first resistance switching layer is formed on the second electrode layer by CVD or mechanical stripping, and a first electrode layer and a third electrode layer are formed on the first resistance switching layer by electron beam exposure and electron beam evaporation. It is required that the second electrode layer at least partially overlaps with the first electrode layer and the third electrode layer in space, and that the first resistance switching layer is used for isolation, and that there is no short circuit between the first electrode layer and the third electrode layer.

[0101] It should be noted that the preparation method of the complementary resistance switch structure based on hexagonal boron nitride in the embodiment of the present disclosure corresponds to the complementary resistance switch structure based on hexagonal boron nitride in the embodiment of the present disclosure. The description of the preparation method specifically refers to the structure part and will not be repeated here.

[0102] According to the embodiments of the present disclosure, an electrode layer is generated on a substrate by electron beam exposure and electron beam evaporation, and a resistance switch layer is generated between the electrode layers to isolate the electrode layers, thereby obtaining a target complementary resistance switch, and an external circuit is used to apply a bias voltage signal to the first electrode layer and the third electrode layer to adjust the potential of the first electrode layer and the third electrode layer, thereby changing the switching state of the resistance switch layer to achieve non-volatile storage of the resistance value, and hexagonal boron nitride is used as the material of the resistance switch layer, so that while the threshold voltage required for switching the switching state of the resistance switch layer is small, the switching ratio of the device is improved, which is conducive to the realization of a large-scale cross-memristor array, and at the same time, the thickness of the resistance switch layer is ensured to be only 0.5nm~10nm, so compared with the complementary resistance switch of the related art, the thickness of the resistance switch layer is reduced, thereby compressing the size of the device, which is conducive to reducing the chip area of ​​the three-dimensional integrated memristor array, and the two-dimensional hexagonal boron nitride has a certain ductility and can be suitable for flexible application scenarios such as wearables.

[0103] Fig.11 A block diagram of a memristor array according to an embodiment of the present disclosure is schematically shown.

[0104] like Fig.11 As shown, the memristor array 1100 includes complementary resistance switches 1110 .

[0105] It should be noted that the complementary resistance switch 1110 in the memristor array in the embodiment of the present disclosure is the same as the complementary resistance switch structure based on hexagonal boron nitride in the above-mentioned embodiment of the present disclosure. The description of the complementary resistance switch 1110 of the memristor array is specifically referred to the above-mentioned embodiment part and will not be repeated here.

[0106] The flowcharts and block diagrams in the accompanying drawings illustrate the possible implementation architecture, functions and operations of the systems, methods and computer program products according to various embodiments of the present disclosure. In this regard, each box in the flowchart or block diagram may represent a module, a program segment, or a part of a code, and the above-mentioned module, program segment, or a part of the code contains one or more executable instructions for implementing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box may also occur in an order different from that marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram or flowchart, and the combination of boxes in the block diagram or flowchart, can be implemented with a dedicated hardware-based system that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions. It can be understood by those skilled in the art that the features recorded in the various embodiments of the present disclosure can be combined and / or combined in a variety of ways, even if such a combination or combination is not explicitly recorded in the present disclosure. In particular, without departing from the spirit and teaching of the present disclosure, the features described in the various embodiments of the present disclosure may be combined and / or combined in a variety of ways. All of these combinations and / or combinations fall within the scope of the present disclosure.

[0107] The embodiments of the present disclosure are described above. However, these embodiments are only for illustrative purposes and are not intended to limit the scope of the present disclosure. Although the embodiments are described above, this does not mean that the measures in the various embodiments cannot be used in combination to advantage. Without departing from the scope of the present disclosure, those skilled in the art may make a variety of substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. A complementary resistance switch structure based on hexagonal boron nitride, characterized in that: include: substrate; an electrode layer, located above the substrate, comprising a first electrode layer, a second electrode layer and a third electrode layer, wherein the first electrode layer and the third electrode layer are electrically connected to an external circuit, and the potentials of the first electrode layer and the third electrode layer change with a bias voltage signal received from the external circuit; A resistance switching layer, comprising a first resistance switching layer, wherein the first resistance switching layer is located between the first electrode layer and the second electrode layer; Among them, the substrate, the electrode layer and the resistance switching layer at least partially overlap in space, and the switching state of the resistance switching layer is switched by adjusting the potential difference between the first electrode layer and the third electrode layer; the material of the resistance switching layer includes hexagonal boron nitride, and the thickness of the resistance switching layer is 0.5nm~10nm.

2. The structure according to claim 1, characterized in that: The first electrode layer and the third electrode layer are located side by side on the same side of the first resistance switch layer.

3. The structure according to claim 1, characterized in that: The resistance switch layer further includes: a second resistance switch layer located between the second electrode layer and the third electrode layer.

4. The structure according to claim 3, characterized in that The switch state includes on and off, and the switch state of the resistance switch layer is switched by adjusting the potential difference between the first electrode layer and the third electrode layer, including: When the potential of the third electrode layer is higher than that of the first electrode layer and the potential difference between the third electrode layer and the first electrode layer is greater than a first threshold, the resistance of the first resistance switch layer decreases until the first resistance switch layer is turned on, and the resistance of the second resistance switch layer increases until the second switch resistance layer is turned off; When the potential of the first electrode layer is higher than the potential of the third electrode layer and the potential difference between the first electrode layer and the third electrode layer is greater than a second threshold, the resistance of the second resistance switching layer decreases until the second resistance switching layer is turned on, and the resistance of the first resistance switching layer increases until the first resistance switching layer is turned off.

5. The structure according to claim 3, characterized in that: The switching state of the first resistance switching layer and the switching state of the second resistance switching layer are obtained according to the following steps: Performing voltage scanning on the first electrode layer and the third electrode layer according to a predetermined voltage interval to obtain current data of the first electrode layer or current data of the third electrode layer; The switching state of the first resistance switching layer and the switching state of the second resistance switching layer are determined according to the current data of the first electrode layer or the current data of the third electrode layer.

6. The structure according to claim 3, characterized in that: The switching state of the first resistance switching layer and the switching state of the second resistance switching layer are obtained according to the following steps: Applying a first test bias voltage to the second electrode layer and the third electrode layer to obtain first current data flowing through the second electrode layer and the third electrode layer; Applying a second test bias voltage to the second electrode layer and the first electrode layer to obtain second current data flowing through the second electrode layer and the first electrode layer; Determining a resistance value of the first resistance switch layer and a resistance value of the second resistance switch layer according to the first current data and the second current data; A switching state of the first resistance switching layer and a switching state of the second resistance switching layer are determined according to a resistance value of the first resistance switching layer and a resistance value of the second resistance switching layer.

7. The structure according to claim 3, characterized in that Also includes: An isolation layer is located between the substrate and each of the electrode layers adjacent to the substrate, and the isolation layer covers the overlapping area between the substrate and each of the electrode layers adjacent to the substrate. The material of the isolation layer includes one of the following: hafnium dioxide, hexagonal boron nitride, and silicon oxide.

8. A method for preparing a complementary resistance switch structure based on hexagonal boron nitride, characterized in that: include: Using electron beam exposure and electron beam evaporation technology, an electrode layer is formed on the substrate; forming a resistive switching layer above the electrode layer; Continue to form the remaining electrode layers above the resistance switch layer; Wherein, the material of the resistance switch layer includes hexagonal boron nitride.

9. The method according to claim 8, characterized in that The step of forming a resistance switching layer above the electrode layer comprises: The resistance switch layer made of hexagonal boron nitride is formed on the electrode layer by chemical vapor deposition or mechanical stripping.

10. A memristor array, characterized in that: include: A complementary resistance switch structure based on hexagonal boron nitride as described in any one of claims 1 to 8.

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