Capacitor array

Abstract

A capacitor array (1) includes a plurality of capacitor cells (1U) arranged in a planar direction. Each capacitor unit (1U) includes a capacitor element (10), a first through conductor (20A), and a second through conductor (20B). A capacitor element (10) includes a first electrode layer (for example, an anode plate 11), a second electrode layer (for example, a cathode layer 12), and a dielectric layer (13). The first electrode layer and the second electrode layer face each other in a thickness direction perpendicular to the plane direction with a dielectric layer (13) therebetween. The first through conductor (20A) is provided on at least the inner wall surface of a first through hole (50A) penetrating the capacitor element (10) in the thickness direction, and is electrically connected to the first electrode layer. The second through conductor (20B) is provided on at least the inner wall surface of a second through hole (50B) penetrating the capacitor element (10) in the thickness direction, and is electrically connected to the second electrode layer. In a plan view from the thickness direction of the capacitor array (1), the area of the capacitor cells (1U), the diameter of the first through-hole (50A), the area of the first through-conductor (20A) in the first through-hole (50A), the diameter of the second through-hole (50B), the area of the second through-conductor (20B) in the second through-hole (50B), and the distance between the centers of the first through-conductor (20A) and the second through-conductor (20B) are equal between the capacitor cells (1U). When the area of a first through conductor (20A) in a first through hole (50A) of a capacitor cell (1U) is STH1, the area of a second through conductor (20B) in a second through hole (50B) is STH2, and the total number of capacitor cells (1U) included in a capacitor array (1) is N, the area of the first through conductor (20A) is smaller than the area of the second through conductor (20B). The correlation of the capacitance Cink of each unit with respect to the distance p between the centers of the first through conductor (20A) and the second through conductor (20B) is obtained from virtual units satisfying all of the following conditions 1-4, and the correlation of the capacitance Cink of each unit with respect to the distance p between the centers of the first through conductor (20A) and the second through conductor (20B) is calculated from the virtual units satisfying all of the following conditions 1-4. The total number n of virtual cells corresponding to the center-to-center distance p is multiplied by the maximum value of the capacitance Cinit of each cell when the capacitance Cinit of each cell is the maximum value, and the total number n of virtual cells corresponding to the center-to-center distance p is multiplied by the maximum value of the capacitance Cinit of each cell. Among the electrostatic capacities of the entire capacitor array (1), a substantial overall capacity corresponding to the electrostatic capacity of the total area amount of the capacitor cells (1U) is large, condition 1: the total number of virtual cells included in the capacitor array (1) is n, and condition 2: the total number of virtual cells included in the capacitor array (1) is n in plan view from the thickness direction of the capacitor array (1). The area of the virtual unit, the diameter of the first through-hole, the area of the first through-conductor in the first through-hole, the diameter of the second through-hole, the area of the second through-conductor in the second through-hole, and the distance between the centers of the first through-conductor and the second through-conductor are the same between the virtual units (3): the area of the first through-conductor in the first through-hole of the virtual unit is st1; condition 4: the value of (st1 + st2) * n is equal to the value of (STH1 + STH2) * N. The surface area of the second through conductor in the second through hole is st2, and the condition 4 is that the value of (st1 + st2) * n is equal to the value of (STH1 + STH2) * N.

Description

Technical Field

[0001] The present invention relates to capacitor arrays. Background Art

[0002] Patent document 1 discloses a capacitor array, which includes: a plurality of solid electrolytic capacitor elements, which are divided from a solid electrolytic capacitor sheet; a sheet-shaped first sealing layer; and a sheet-shaped second sealing layer. The solid electrolytic capacitor sheet includes: an anode plate, which is composed of a valve-acting metal; a porous layer, which is provided on at least one main surface of the anode plate; a dielectric layer, which is provided on the surface of the porous layer; and a cathode layer, which includes a solid electrolyte layer provided on the surface of the dielectric layer, and the solid electrolytic capacitor sheet has a first main surface and a second main surface opposite to each other in the thickness direction. The first main surface side of each of the plurality of solid electrolytic capacitor elements is arranged on the first sealing layer. The second sealing layer is arranged in a manner that covers the plurality of solid electrolytic capacitor elements on the first sealing layer from the second main surface side. The solid electrolytic capacitor elements are divided by a slit-shaped sheet removal portion.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2020-167361 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] Patent Document 1 describes that it is preferable to provide a through electrode penetrating the first sealing layer or the second sealing layer in the thickness direction, and to connect the anode plate or the cathode layer to an external electrode via the through electrode.

[0008] For example, FIG. 22 of Patent Document 1 describes a structure in which a capacitor unit is formed by a capacitor effective portion existing around a pair of through electrodes (hereinafter referred to as through conductors), and the capacitor unit is repeatedly arranged in a group.

[0009] When a large current is passed through the capacitor array as described in Patent Document 1, it is necessary to increase the amount of through-conductors by increasing the diameter of the through-conductors, increasing the number of through-conductors, etc. However, if the amount of through-conductors increases relative to the occupied area of ​​the capacitor array, the electrostatic capacitance of the capacitor unit decreases accordingly, and thus the electrostatic capacitance of the capacitor array as a whole decreases.

[0010] In addition, the above-mentioned problem is not limited to solid electrolytic capacitor elements, but is a common problem in capacitor arrays including a plurality of capacitor elements.

[0011] The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a capacitor array having a large overall electrostatic capacitance relative to the conductor amount of through conductors required according to the amount of current.

[0012] Solutions used to solve problems

[0013] The capacitor array of the present invention includes a plurality of capacitor units arranged in a planar direction. The capacitor units include a capacitor element, a first through conductor, and a second through conductor, respectively. The capacitor element includes a first electrode layer, a second electrode layer, and a dielectric layer. The first electrode layer and the second electrode layer are opposed to each other in a thickness direction perpendicular to the planar direction via the dielectric layer. The first through conductor is provided on at least the inner wall surface of the first through hole that penetrates the capacitor element in the thickness direction, and is electrically connected to the first electrode layer. The second through conductor is provided on at least the inner wall surface of the second through hole that penetrates the capacitor element in the thickness direction, and is electrically connected to the second electrode layer. When viewed from above in the thickness direction of the capacitor array, the area of ​​the capacitor unit, the diameter of the first through hole, the area of ​​the first through conductor in the first through hole, the diameter of the second through hole, the area of ​​the second through conductor in the second through hole, and the center-to-center distance between the first through conductor and the second through conductor are equal between the capacitor units. The area of ​​the first through conductor in the first through hole of the capacitor unit is S TH1 The area of ​​the second through conductor in the second through hole is S TH2 When the total number of the capacitor units included in the capacitor array is N, the electrostatic capacitance C of each unit is obtained from the virtual units that satisfy all of the following conditions 1 to 4. unit With respect to the center distance p between the first through conductor and the second through conductor, the capacitance C of each unit is unit The total number n of the above-mentioned imaginary units corresponding to the above-mentioned center-to-center distance p when the maximum value is taken multiplied by the electrostatic capacitance C of each of the above-mentioned units unit The actual overall capacitance of the capacitor array as a whole, which is equivalent to the capacitance of the total area of ​​the capacitor units, is larger than the hypothetical overall capacitance obtained by taking the maximum value of

[0014] Condition 1: The total number of the virtual units included in the capacitor array is n,

[0015] Condition 2: When viewed from above in the thickness direction of the capacitor array, the area of ​​the imaginary unit, the diameter of the first through hole, the area of ​​the first through conductor in the first through hole, the diameter of the second through hole, the area of ​​the second through conductor in the second through hole, and the center-to-center distance between the first through conductor and the second through conductor are equal between the imaginary units,

[0016] Condition 3: The area of ​​the first through-conductor in the first through-hole of the virtual unit is s th1 The area of ​​the second through conductor in the second through hole is s th2 ,

[0017] Condition 4: (s th1 +s th2 )×n value and (S TH1 +S TH2 )×N are equal.

[0018] Effects of the Invention

[0019] According to the present invention, it is possible to provide a capacitor array having a large overall electrostatic capacitance relative to the conductor amount of through conductors required according to the amount of current. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 FIG. 1 is a plan view schematically showing an example of a capacitor array according to the present invention.

[0021] Figure 2 It is enlarged in Figure 1 A top view of the portion of the capacitor array shown is indicated by II.

[0022] Figure 3 yes Figure 2 An example of a cross-sectional view of the capacitor array along line III-III is shown.

[0023] Figure 4 yes Figure 3 An example of a top view of the capacitor array along line IV-IV is shown.

[0024] Figure 5 It represents the electrostatic capacitance C of each unit unit Or an example of a graph showing the dependency of the virtual overall capacitance on the center-to-center distance p between the first through conductor and the second through conductor.

[0025] Figure 6 It is a plan view schematically showing an example of the arrangement of the first through conductors and the second through conductors in the capacitor array of the present invention.

[0026] Figure 7It is used to illustrate Figure 6 A top view of an example of the configuration shown.

[0027] Figure 8 It is used to illustrate Figure 6 A top view of another example of the configuration shown.

[0028] Fig. 9 It is a plan view schematically showing another example of the arrangement of the first through conductors and the second through conductors in the capacitor array of the present invention.

[0029] Fig.10 It is used to illustrate Fig. 9 A top view of an example of the configuration shown.

[0030] Fig.11 It is used to illustrate Fig. 9 A top view of another example of the configuration shown.

[0031] Fig.12 Yes means Figure 6 A top view of an example of a capacitor unit configured as shown.

[0032] Fig.13 Yes means Fig. 9 A top view of an example of a capacitor unit configured as shown. DETAILED DESCRIPTION

[0033] The capacitor array of the present invention is described below. In addition, the present invention is not limited to the following structure, and can be appropriately changed within the scope of not changing the gist of the present invention. In addition, a structure formed by combining a plurality of the preferred structures described below is also the present invention.

[0034] In this specification, terms indicating the relationship between elements (for example, "vertical", "parallel", "orthogonal", etc.) and terms indicating the shape of an element do not express only strict meanings, but rather express substantially equal ranges, for example, also including differences of several percentage points.

[0035] The drawings shown below are schematic diagrams, and their dimensions, aspect ratios, etc. may differ from those of actual products. In the drawings, the same reference numerals are used for the same or equivalent parts. In addition, in each drawing, the same reference numerals are marked for the same elements and repeated descriptions are omitted.

[0036] Figure 1 FIG. 1 is a plan view schematically showing an example of a capacitor array according to the present invention. Figure 2 It is enlarged in Figure 1 A top view of the portion of the capacitor array shown is indicated by II.

[0037] Figure 1The capacitor array 1 shown includes a plurality of capacitor units 1U arranged in a planar direction (see Figure 2 ).

[0038] The number of capacitor units 1U included in the capacitor array 1 is not particularly limited as long as it is two or more.

[0039] like Figure 1 and Figure 2 As shown, the capacitor unit 1U includes a capacitor element 10 , a first through conductor 20A, and a second through conductor 20B.

[0040] It is preferable that the structure of the capacitor element 10 is the same between the capacitor units 1U.

[0041] The adjacent capacitor elements 10 between the capacitor units 1U may be disconnected by the through grooves or not. When the adjacent capacitor elements 10 between the capacitor units 1U are disconnected by the through grooves, the adjacent capacitor elements 10 only need to be physically disconnected. Therefore, the adjacent capacitor elements 10 may be electrically disconnected or electrically connected. For example, groups of electrically disconnected capacitor elements 10 and groups of electrically connected capacitor elements 10 may also exist in a mixed state.

[0042] Figure 3 yes Figure 2 An example of a cross-sectional view of the capacitor array along line III-III shown in FIG. Figure 1 yes Figure 3 An example of a top view of the capacitor array along line II shown.

[0043] exist Figure 3 In the example shown, the capacitor array 1 includes a capacitor unit 1U (see FIG. 1 ) including a capacitor element 10, a first through conductor 20A, and a second through conductor 20B. Figure 2 ), it also includes a sealing layer 30, a first conductive wiring layer 40A and a second conductive wiring layer 40B.

[0044] The capacitor element 10 includes a first electrode layer, a second electrode layer, and a dielectric layer. The first electrode layer and the second electrode layer face each other in a thickness direction perpendicular to the planar direction via the dielectric layer.

[0045] exist Figure 3 In the example shown, the capacitor element 10 includes an anode plate 11, a cathode layer 12, and a dielectric layer 13. The anode plate 11 and the cathode layer 12 are separated by the dielectric layer 13 in the plane direction ( Figure 3 The thickness direction ( Figure 3That is, the anode plate 11 corresponds to the first electrode layer, and the cathode layer 12 corresponds to the second electrode layer. Thus, the capacitor element 10 constitutes an electrolytic capacitor.

[0046] The anode plate 11 includes a core portion 11A made of metal, for example, and a porous portion 11B provided on at least one main surface of the core portion 11A. Figure 3 In the example shown, porous portion 11B is provided on both main surfaces of core portion 11A, but porous portion 11B may be provided on only one main surface of core portion 11A. Dielectric layer 13 is provided on the surface of porous portion 11B, and cathode layer 12 is provided on the surface of dielectric layer 13.

[0047] Cathode layer 12 includes, for example, solid electrolyte layer 12A provided on the surface of dielectric layer 13. Preferably, cathode layer 12 further includes conductor layer 12B provided on the surface of solid electrolyte layer 12A. When cathode layer 12 includes solid electrolyte layer 12A, capacitor element 10 constitutes a solid electrolytic capacitor.

[0048] like Figure 3 As shown, the first through conductor 20A is provided on at least the inner wall surface of the first through hole 50A that penetrates the capacitor element 10 in the thickness direction. That is, the first through conductor 20A may be provided only on the inner wall surface of the first through hole 50A, or may be provided throughout the interior of the first through hole 50A. In the case where the first through conductor 20A is provided only on the inner wall surface of the first through hole 50A, the space surrounded by the first through conductor 20A in the first through hole 50A may be filled with a material containing resin. That is, the first resin filling portion 25A may be provided inside the first through conductor 20A. Figure 3 In the illustrated example, the first through conductor 20A is provided on the inner wall surface of the first through hole 50A that penetrates the sealing layer 30 and the capacitor element 10 in the thickness direction.

[0049] Preferably, if Figure 1 and Figure 2 As shown, the first through conductor 20A is present in the cathode layer 12 when viewed in plan from the thickness direction of the anode plate 11 .

[0050] like Figure 3 As shown in FIG. 1 , the first through conductor 20A is electrically connected to the first electrode layer (eg, the anode plate 11 ). Figure 3 In the illustrated example, the first through conductor 20A is connected at an end portion to a first conductive wiring layer 40A provided on the surface of the sealing layer 30 .

[0051] Furthermore, it is preferred that Figure 3As shown, the first through conductor 20A is electrically connected to the anode plate 11 at the inner wall surface of the first through hole 50A. More specifically, it is preferred that the first through conductor 20A is electrically connected to the end surface of the anode plate 11 that faces the inner wall surface of the first through hole 50A in the planar direction. In this case, an insulating material such as the sealing layer 30 is not filled between the end surface of the anode plate 11 and the first through conductor 20A.

[0052] Preferably, if Figure 3 As shown, the core 11A and the porous portion 11B are exposed on the end surface of the anode plate 11 and are electrically connected to the first through conductor 20A. In this case, the porous portion 11B is electrically connected to the first through conductor 20A in addition to the core 11A.

[0053] Preferably, when viewed in the thickness direction of the anode plate 11 , the first through conductor 20A is electrically connected to the anode plate 11 over the entire circumference of the first through hole 50A.

[0054] The first through conductor 20A may be electrically connected via the anode connecting layer, or may be directly connected to the end surface of the anode plate 11 .

[0055] like Figure 3 As shown, the second through conductor 20B is provided on at least the inner wall surface of the second through hole 50B that penetrates the capacitor element 10 in the thickness direction. That is, the second through conductor 20B may be provided only on the inner wall surface of the second through hole 50B, or may be provided throughout the interior of the second through hole 50B. In the case where the second through conductor 20B is provided only on the inner wall surface of the second through hole 50B, the space surrounded by the second through conductor 20B in the second through hole 50B may be filled with a material containing resin. That is, a second resin filling portion 25B may be provided inside the second through conductor 20B. Figure 3 In the illustrated example, the second through conductor 20B is provided on the inner wall surface of the second through hole 50B that penetrates the sealing layer 30 and the capacitor element 10 in the thickness direction.

[0056] Preferably, if Figure 1 and Figure 2 As shown, the second through conductor 20B is present in the cathode layer 12 when viewed in plan from the thickness direction of the anode plate 11 .

[0057] like Figure 3 As shown in FIG. 1 , the second through conductor 20B is electrically connected to the second electrode layer (eg, cathode layer 12 ). Figure 3 In the illustrated example, the second through conductor 20B is connected at an end portion to a second conductive wiring layer 40B provided on the surface of the sealing layer 30 .

[0058] Furthermore, it is preferred that Figure 3As shown, an insulating material such as a sealing layer 30 is filled between the end surface of the anode plate 11 and the second through conductor 20B.

[0059] Sealing layer 30 is provided so as to cover capacitor element 10 . Capacitor element 10 is protected by sealing layer 30 .

[0060] Preferably, if Figure 3 As shown, sealing layer 30 is provided on two main surfaces of capacitor element 10 that are opposed to each other in the thickness direction.

[0061] It can also be, Figure 2 and Figure 3 As shown, the capacitor element 10 further includes an insulating layer 35 provided around the first through conductor 20A or the second through conductor 20B on at least one main surface of the anode plate 11 .

[0062] In addition, it can also be, Figure 2 As shown, capacitor element 10 further includes an insulating layer 35 provided on at least one main surface of anode plate 11 so as to surround cathode layer 12 .

[0063] The first conductive wiring layer 40A is provided on the surface of the sealing layer 30 and is electrically connected to the first through conductor 20A. Figure 3 In the illustrated example, the first conductive wiring layer 40A is provided on the surface of the first through conductor 20A, and functions as a connection terminal of the capacitor element 10 .

[0064] Specifically, in Figure 3 In the illustrated example, the first conductive wiring layer 40A is electrically connected to the anode plate 11 via the first through conductor 20A, and functions as a connection terminal for the anode plate 11 .

[0065] The second conductor wiring layer 40B is provided on the surface of the sealing layer 30 and is electrically connected to the second through conductor 20B. Figure 3 In the illustrated example, the second conductive wiring layer 40B is provided on the surface of the second through conductor 20B, and functions as a connection terminal of the capacitor element 10 .

[0066] Specifically, in Figure 3 In the illustrated example, the second conductive wiring layer 40B is electrically connected to the cathode layer 12 via a via conductor 45 provided inside the sealing layer 30 , and functions as a connection terminal for the cathode layer 12 .

[0067] Figure 4 yes Figure 3 An example of a top view of the capacitor array along line IV-IV is shown.

[0068] like Figure 4As shown, when the capacitor array 1 is viewed from the thickness direction, the area of ​​the capacitor unit 1U and the diameter of the first through hole 50A ( Figure 4 In the D TH1 denoted by length), the area of ​​the first through-conductor 20A in the first through-hole 50A, the diameter of the second through-hole 50B ( Figure 4 In the D TH2 denoted by ), the area of ​​the second through-conductor 20B in the second through-hole 50B, and the center-to-center distance between the first through-conductor 20A and the second through-conductor 20B ( Figure 4 The length represented by P in the capacitor unit 1U is equal between the capacitor units 1U.

[0069] In this specification, “equal” does not mean only completely equal, but means substantially equal, and includes, for example, a difference of several percentage points.

[0070] In this specification, the diameter of a through hole refers to a diameter when the planar shape is a circle, and refers to an equivalent circle diameter when the planar shape is other than a circle.

[0071] In this specification, the center of a through conductor refers to the center of the smallest circle that includes the through conductor when viewed from the thickness direction of the capacitor array. Therefore, the center-to-center distance between the first through conductor and the second through conductor refers to the length of the line segment connecting the center of the first through conductor and the center of the second through conductor obtained by the above method. The same is true for the center-to-center distance between the first through conductor and the center-to-center distance between the second through conductor and the second through conductor described later.

[0072] It is preferable that the shapes of the capacitor units 1U are equal among the capacitor units 1U when viewed in plan from the thickness direction of the capacitor array 1 .

[0073] It is preferable that the shapes of the first through conductors 20A constituting the capacitor units 1U are equal between the capacitor units 1U when viewed in plan from the thickness direction of the capacitor array 1 .

[0074] It is preferable that the shapes of the second through conductors 20B constituting the capacitor units 1U are equal between the capacitor units 1U when viewed in plan from the thickness direction of the capacitor array 1 .

[0075] In the same capacitor unit 1U, the diameter of the first through hole 50A may be different from the diameter of the second through hole 50B, but is preferably equal to the diameter of the second through hole 50B. Therefore, it is preferred that the diameter of the first through hole 50A is equal to the diameter of the second through hole 50B in all capacitor units 1U.

[0076] In the same capacitor unit 1U, the area of ​​the first through-conductor 20A in the first through-hole 50A may be different from the area of ​​the second through-conductor 20B in the second through-hole 50B, but is preferably equal to the area of ​​the second through-conductor 20B in the second through-hole 50B. Therefore, it is preferred that the area of ​​the first through-conductor 20A in the first through-hole 50A is equal to the area of ​​the second through-conductor 20B in the second through-hole 50B in all capacitor units 1U.

[0077] The capacitor array 1 is characterized in that the electrostatic capacitance C of each unit is obtained from the virtual unit by the following methods (1) and (2). unit In the case of the dependence of the center distance p between the first through conductor and the second through conductor, the capacitance C per unit unit The total number of imaginary cells n corresponding to the center-to-center distance p when the maximum value is taken multiplied by the electrostatic capacitance C of each cell unit Compared with the virtual overall capacitance obtained by calculating the maximum value of , the actual overall capacitance corresponding to the capacitance of the total area of ​​the capacitor units 1U in the overall capacitance of the capacitor array 1 is larger.

[0078] (1) The area of ​​the first through-conductor 20A in the first through-hole 50A of the capacitor unit 1U is S TH1 , the area of ​​the second through-conductor 20B in the second through-hole 50B is S TH2 When the total number of capacitor units 1U included in the capacitor array 1 is N, it is assumed that a virtual unit satisfying all of the following conditions 1 to 4 is included in the capacitor array 1 instead of the capacitor unit 1U.

[0079] Condition 1: The total number of virtual cells included in the capacitor array 1 is n.

[0080] Condition 2: When viewed from above in the thickness direction of the capacitor array 1, the area of ​​the imaginary unit, the diameter of the first through hole, the area of ​​the first through conductor in the first through hole, the diameter of the second through hole, the area of ​​the second through conductor in the second through hole, and the distance between the centers of the first through conductor and the second through conductor are equal between the imaginary units.

[0081] It is preferable that the shapes of the virtual cells are equal among the virtual cells when viewed in plan from the thickness direction of the capacitor array 1 .

[0082] It is preferable that the shapes of the first through-conductors constituting the virtual cells are the same between the virtual cells when viewed in plan from the thickness direction of the capacitor array 1 .

[0083] It is preferable that the shapes of the second through-conductors constituting the virtual cells are the same between the virtual cells when viewed in plan from the thickness direction of the capacitor array 1 .

[0084] In the same imaginary unit, the diameter of the first through hole may be different from the diameter of the second through hole, but is preferably equal to the diameter of the second through hole. Therefore, it is preferred that the diameter of the first through hole is equal to the diameter of the second through hole in all imaginary units.

[0085] In the same imaginary unit, the area of ​​the first through conductor in the first through hole may be different from the area of ​​the second through conductor in the second through hole, but is preferably equal to the area of ​​the second through conductor in the second through hole. Therefore, it is preferred that the area of ​​the first through conductor in the first through hole is equal to the area of ​​the second through conductor in the second through hole in all imaginary units.

[0086] Condition 3: The area of ​​the first through-conductor in the first through-hole of the virtual cell is s th1 , the area of ​​the second through conductor in the second through hole is s th2 .

[0087] Condition 4: (s th1 +s th2 )×n value and (S TH1 +S TH2 )×N are equal.

[0088] (2) Calculate the capacitance C of each unit from the above hypothetical unit unit with respect to the center-to-center distance p between the first through conductor and the second through conductor.

[0089] The occupied area of ​​the capacitor array 1 is constant, so in the virtual unit, (s th1 +s th2 )×n value and (S TH1 +S TH2 The area of ​​the virtual unit, the diameter of the first through hole, and the diameter of the second through hole are determined according to the center-to-center distance p of the first through conductor and the second through conductor so that the values ​​of )×N are equal. Thus, the electrostatic capacitance Cunit per unit is obtained.

[0090] Furthermore, by multiplying the total number of virtual cells n corresponding to the center-to-center distance p by the electrostatic capacitance C per cell, unit To find the hypothetical overall capacity.

[0091] Figure 5 It represents the electrostatic capacitance C of each unit unit Or an example of a graph showing the dependency of the virtual overall capacitance on the center-to-center distance p between the first through conductor and the second through conductor.

[0092] like Figure 5 As shown, it can be seen that the electrostatic capacitance C of each unitunit The center distance p( Figure 5 The distance between the centers when the overall capacity is assumed to be the maximum is p( Figure 5 p1) is inconsistent.

[0093] As described above, the capacitor array 1 is characterized in that: unit The total number of imaginary cells n corresponding to the center-to-center distance p when the maximum value is taken multiplied by the electrostatic capacitance C of each cell unit Compared with the virtual overall capacitance obtained by calculating the maximum value of , the actual overall capacitance corresponding to the capacitance of the total area of ​​the capacitor units 1U in the overall capacitance of the capacitor array 1 is larger.

[0094] Here, assuming that the electrostatic capacitance of the entire capacitor array 1 is C total , when the total area of ​​the capacitor units 1U (i.e., the value of the area of ​​the capacitor units 1U×N) is set to S1 and the area of ​​the entire capacitor array 1 is set to S2, the actual total capacitance C is calculated by C=C total × S1 / S2 definition. There is a case where the total area S1 of the capacitor units 1U is the same as the area S2 of the capacitor array 1 as a whole, and there is also a case where the total area S1 of the capacitor units 1U is smaller than the area S2 of the capacitor array 1 as a whole. Therefore, there is a case where the actual overall capacitance of the capacitor array 1 is inconsistent with the overall electrostatic capacitance of the capacitor array 1. For example, in the following Fig.11 In the figure, the electrostatic capacitance of the portion located outside the first unit 1UA and the fourth unit 1UD, which are parts of the capacitor unit 1U, is not included in the substantial total capacitance.

[0095] exist Figure 5 In the example shown, the electrostatic capacitance C per unit is represented by C0. unit The distance from the center when the maximum value is taken is p( Figure 5 The total number of imaginary units n corresponding to p0 multiplied by the electrostatic capacitance C of each unit unit Therefore, a capacitor array having a substantially larger overall capacitance than the electrostatic capacitance represented by C0 is within the scope of the present invention. Figure 5 A capacitor array in which the capacitance represented by C1, C2 or C3 is substantially the entire capacitance is within the scope of the present invention. Figure 5 A capacitor array in which the electrostatic capacitance represented by C4 or C5 is substantially the entire capacitance is outside the scope of the present invention.

[0096] In this way, in the capacitor array 1 , the overall electrostatic capacitance can be increased relative to the conductor amount of the through conductor required according to the amount of current.

[0097] Figure 6 It is a plan view schematically showing an example of the arrangement of the first through conductors and the second through conductors in the capacitor array of the present invention. Figure 6 The top view shown is with Figure 4 The same position ( Figure 3 Top view at the position of line IV-IV in the figure.

[0098] exist Figure 6 In the capacitor array 1A shown in FIG. 1 , the first through conductor 20A and the second through conductor 20B are arranged in a square shape as a whole. In the square arrangement, the first through conductor 20A or the second through conductor 20B is arranged at each vertex of the square shape. Figure 6 In the illustrated example, the first through conductors 20A and the second through conductors 20B are alternately arranged from the upper side to the lower side, and the first through conductors 20A and the second through conductors 20B are alternately arranged from the left side to the right side.

[0099] Figure 7 It is used to illustrate Figure 6 A top view of an example of the configuration shown.

[0100] exist Figure 7 In the embodiment, the capacitor unit 1U includes a first unit 1UA and a second unit 1UB adjacent to the first unit 1UA.

[0101] Preferably, if Figure 7 As shown, when viewed from the thickness direction of the capacitor array 1A, the center distance between the first through conductor 20A of the first unit 1UA and the second through conductor 20B of the first unit 1UA is equal to the center distance between the first through conductor 20A of the first unit 1UA and the second through conductor 20B of the second unit 1UB.

[0102] like Figure 7 As shown, by forming a current path in parallel with the capacitor array 1A, the equivalent series resistance and equivalent series inductance can be reduced. Moreover, by making the center distance between the first through conductor 20A and the second through conductor 20B uniform, the impedance difference between each current path can be reduced. In addition, the heat generation of the capacitor array 1A can be dispersed to increase the current capacity.

[0103] Preferably, if Figure 7 As shown, the capacitor unit 1U also includes a third unit 1UC adjacent to the first unit 1UA, and when viewed from above in the thickness direction of the capacitor array 1A, the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the second unit 1UB is equal to the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the third unit 1UC.

[0104] When the capacitor unit 1U includes the third unit 1UC, it is preferable that Figure 7 As shown, when viewed from above in the thickness direction of the capacitor array 1A, the second through conductor 20B of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the first unit 1UA with the center of the second through conductor 20B of the second unit 1UB at an angle of 90 degrees or 180 degrees with the center of the second through conductor 20B of the first unit 1UA as a reference. In this case, it is sufficient that the smallest circle including the second through conductor 20B of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the first unit 1UA with the center of the second through conductor 20B of the second unit 1UB at an angle of 90 degrees or 180 degrees with the center of the second through conductor 20B of the first unit 1UA as a reference.

[0105] Furthermore, it is preferred that Figure 7 As shown, the capacitor unit 1U also includes a fourth unit 1UD adjacent to the first unit 1UA, and when viewed from above in the thickness direction of the capacitor array 1A, the center-to-center distance between the second through conductor 20B of the second unit 1UB and the second through conductor 20B of the first unit 1UA is equal to the center-to-center distance between the second through conductor 20B of the second unit 1UB and the second through conductor 20B of the fourth unit 1UD.

[0106] When the capacitor unit 1U includes the fourth unit 1UD, it is preferable that Figure 7 As shown, when viewed from above in the thickness direction of the capacitor array 1A, the second through conductor 20B of the fourth unit 1UD exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the second unit 1UB with the center of the second through conductor 20B of the first unit 1UA at an angle of 90 degrees or 180 degrees with the center of the second through conductor 20B of the second unit 1UB as a reference. In this case, it is sufficient that the smallest circle including the second through conductor 20B of the fourth unit 1UD exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the second unit 1UB with the center of the second through conductor 20B of the first unit 1UA at an angle of 90 degrees or 180 degrees with the center of the second through conductor 20B of the second unit 1UB as a reference.

[0107] exist Figure 7In the example shown, it is preferred that, when viewed from the thickness direction of the capacitor array 1A, the number of second through conductors 20B existing inside a circle having a radius equal to the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the second unit 1UB and centered on the center of the first through conductor 20A of the first unit 1UA is equal to the number of second through conductors 20B existing inside a circle having a radius equal to the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the second unit 1UB and centered on the center of the first through conductor 20A of the second unit 1UB.

[0108] like Figure 7 As shown in FIG. 1 , by arranging capacitor units 1U equally and in parallel in current paths arranged equally, the noise removal effect can be improved.

[0109] In particular, it is preferred that, when viewed from the thickness direction of the capacitor array 1A, the difference between the total area of ​​the second through conductors 20B overlapping with a circle having a radius equal to the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the second unit 1UB and centered on the center of the first through conductor 20A of the first unit 1UA and the total area of ​​the second through conductors 20B existing inside a circle having a radius equal to the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the second unit 1UB and centered on the center of the first through conductor 20A of the second unit 1UB is within ±5%.

[0110] Figure 8 It is used to illustrate Figure 6 A top view of another example of the configuration shown.

[0111] exist Figure 8 In the embodiment, the capacitor unit 1U includes a first unit 1UA and a second unit 1UB adjacent to the first unit 1UA.

[0112] Preferably, if Figure 8 As shown, when viewed from the thickness direction of the capacitor array 1A, the center distance between the second through conductor 20B of the first unit 1UA and the first through conductor 20A of the first unit 1UA is equal to the center distance between the second through conductor 20B of the first unit 1UA and the first through conductor 20A of the second unit 1UB.

[0113] like Figure 8As shown, by forming a current path in parallel with the capacitor array 1A, the equivalent series resistance and equivalent series inductance can be reduced. Moreover, by making the center distance between the first through conductor 20A and the second through conductor 20B uniform, the impedance difference between each current path can be reduced. In addition, the heat generation of the capacitor array 1A can be dispersed to increase the current capacity.

[0114] Preferably, if Figure 8 As shown, the capacitor unit 1U also includes a third unit 1UC adjacent to the first unit 1UA, and when viewed from above in the thickness direction of the capacitor array 1A, the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the second unit 1UB is equal to the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the third unit 1UC.

[0115] When the capacitor unit 1U includes the third unit 1UC, it is preferable that Figure 8 As shown, when viewed from above in the thickness direction of the capacitor array 1A, the first through conductor 20A of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the first unit 1UA with the center of the first through conductor 20A of the second unit 1UB at an angle of 90 degrees or 180 degrees with the center of the first through conductor 20A of the first unit 1UA as a reference. In this case, it is sufficient that the smallest circle including the first through conductor 20A of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the first unit 1UA with the center of the first through conductor 20A of the second unit 1UB at an angle of 90 degrees or 180 degrees with the center of the first through conductor 20A of the first unit 1UA as a reference.

[0116] Furthermore, it is preferred that Figure 8 As shown, the capacitor unit 1U also includes a fourth unit 1UD adjacent to the first unit 1UA, and when viewed from above in the thickness direction of the capacitor array 1A, the center-to-center distance between the first through conductor 20A of the second unit 1UB and the first through conductor 20A of the first unit 1UA is equal to the center-to-center distance between the first through conductor 20A of the second unit 1UB and the first through conductor 20A of the fourth unit 1UD.

[0117] When the capacitor unit 1U includes the fourth unit 1UD, it is preferable that Figure 8As shown, when viewed from above in the thickness direction of the capacitor array 1A, the first through conductor 20A of the fourth unit 1UD exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the second unit 1UB with the center of the first through conductor 20A of the first unit 1UA at an angle of 90 degrees or 180 degrees with the center of the first through conductor 20A of the second unit 1UB as a reference. In this case, it is sufficient that the smallest circle including the first through conductor 20A of the fourth unit 1UD exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the second unit 1UB with the center of the first through conductor 20A of the first unit 1UA at an angle of 90 degrees or 180 degrees with the center of the first through conductor 20A of the second unit 1UB as a reference.

[0118] exist Figure 8 In the example shown, it is preferred that, when looking down in the thickness direction of the capacitor array 1A, the number of first through conductors 20A existing inside a circle having a radius equal to the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the second unit 1UB and centered on the center of the second through conductor 20B of the first unit 1UA is equal to the number of first through conductors 20A existing inside a circle having a radius equal to the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the second unit 1UB and centered on the center of the second through conductor 20B of the second unit 1UB.

[0119] like Figure 8 As shown in FIG. 1 , by arranging capacitor units 1U equally and in parallel in current paths arranged equally, the noise removal effect can be improved.

[0120] In particular, it is preferred that, when viewed from above in the thickness direction of the capacitor array 1A, the difference between the total area of ​​the first through conductors 20A overlapping with a circle having as a radius the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the second unit 1UB and centered on the center of the second through conductor 20B of the first unit 1UA and the total area of ​​the first through conductor 20A existing inside the circle having as a radius the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the second unit 1UB and centered on the center of the second through conductor 20B of the second unit 1UB is within ±5%.

[0121] Fig. 9 It is a plan view schematically showing another example of the arrangement of the first through conductors and the second through conductors in the capacitor array of the present invention. Fig. 9 The top view shown is with Figure 4 The same position ( Figure 3 Top view at the position of line IV-IV in the figure.

[0122] exist Fig. 9 In the capacitor array 1B shown in FIG. 1 , the first through conductor 20A and the second through conductor 20B are arranged in a hexagonal configuration as a whole. In the hexagonal configuration, the first through conductor 20A or the second through conductor 20B is arranged at each vertex of a regular hexagon and at the center of the regular hexagon. Fig. 9 In the example shown, the first through conductors 20A and the second through conductors 20B are alternately arranged from the upper side to the lower side. In addition, when the first through conductors 20A and the second through conductors 20B are arranged in a hexagonal pattern as a whole, for example, the first through conductors 20A and the second through conductors 20B may be alternately arranged every two from the upper side to the lower side.

[0123] Fig.10 It is used to illustrate Fig. 9 A top view of an example of the configuration shown.

[0124] exist Fig.10 In the embodiment, the capacitor unit 1U includes a first unit 1UA and a second unit 1UB adjacent to the first unit 1UA.

[0125] Preferably, if Fig.10 As shown, when viewed from the thickness direction of the capacitor array 1B, the center-to-center distance between the first through conductor 20A of the first unit 1UA and the second through conductor 20B of the first unit 1UA is equal to the center-to-center distance between the first through conductor 20A of the first unit 1UA and the second through conductor 20B of the second unit 1UB.

[0126] Preferably, if Fig.10 As shown, the capacitor unit 1U also includes a third unit 1UC adjacent to the first unit 1UA, and when viewed from above in the thickness direction of the capacitor array 1B, the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the second unit 1UB is equal to the center-to-center distance between the second through conductor 20B of the first unit 1UA and the second through conductor 20B of the third unit 1UC.

[0127] When the capacitor unit 1U includes the third unit 1UC, it is preferable that Fig.10As shown, when viewed from above in the thickness direction of the capacitor array 1B, the second through conductor 20B of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the first unit 1UA with the center of the second through conductor 20B of the second unit 1UB at an angle of 60 degrees or 120 degrees with the center of the second through conductor 20B of the first unit 1UA as a reference. In this case, it is sufficient that the smallest circle including the second through conductor 20B of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the first unit 1UA with the center of the second through conductor 20B of the second unit 1UB at an angle of 60 degrees or 120 degrees with the center of the second through conductor 20B of the first unit 1UA as a reference.

[0128] Furthermore, it is preferred that Fig.10 As shown, the capacitor unit 1U also includes a fourth unit 1UD adjacent to the first unit 1UA, and when viewed from above in the thickness direction of the capacitor array 1B, the center-to-center distance between the second through conductor 20B of the second unit 1UB and the second through conductor 20B of the first unit 1UA is equal to the center-to-center distance between the second through conductor 20B of the second unit 1UB and the second through conductor 20B of the fourth unit 1UD.

[0129] When the capacitor unit 1U includes the fourth unit 1UD, it is preferable that Fig.10 As shown, when viewed from above in the thickness direction of the capacitor array 1B, the second through conductor 20B of the fourth unit 1UD exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the second unit 1UB with the center of the second through conductor 20B of the first unit 1UA at an angle of 60 degrees or 120 degrees with the center of the second through conductor 20B of the second unit 1UB as a reference. In this case, it is sufficient that the smallest circle including the second through conductor 20B of the fourth unit 1UD exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the second unit 1UB with the center of the second through conductor 20B of the first unit 1UA at an angle of 60 degrees or 120 degrees with the center of the second through conductor 20B of the second unit 1UB as a reference.

[0130] Fig.11 It is used to illustrate Fig. 9 A top view of another example of the configuration shown.

[0131] exist Fig.11 In the embodiment, the capacitor unit 1U includes a first unit 1UA and a second unit 1UB adjacent to the first unit 1UA.

[0132] Preferably, if Fig.11 As shown, when viewed from the thickness direction of the capacitor array 1B, the center-to-center distance between the second through conductor 20B of the first unit 1UA and the first through conductor 20A of the first unit 1UA is equal to the center-to-center distance between the second through conductor 20B of the first unit 1UA and the first through conductor 20A of the second unit 1UB.

[0133] Preferably, if Fig.11 As shown, the capacitor unit 1U also includes a third unit 1UC adjacent to the first unit 1UA, and when viewed from above in the thickness direction of the capacitor array 1B, the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the second unit 1UB is equal to the center-to-center distance between the first through conductor 20A of the first unit 1UA and the first through conductor 20A of the third unit 1UC.

[0134] When the capacitor unit 1U includes the third unit 1UC, it is preferable that Fig.11 As shown, when viewed from above in the thickness direction of the capacitor array 1B, the first through conductor 20A of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the first unit 1UA with the center of the first through conductor 20A of the second unit 1UB at an angle of 60 degrees or 120 degrees with the center of the first through conductor 20A of the first unit 1UA as a reference. In this case, it is sufficient that the smallest circle including the first through conductor 20A of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the first unit 1UA with the center of the first through conductor 20A of the second unit 1UB at an angle of 60 degrees or 120 degrees with the center of the first through conductor 20A of the first unit 1UA as a reference.

[0135] Furthermore, it is preferred that Fig.11 As shown, the capacitor unit 1U also includes a fourth unit 1UD adjacent to the first unit 1UA, and when viewed from above in the thickness direction of the capacitor array 1B, the center-to-center distance between the first through conductor 20A of the second unit 1UB and the first through conductor 20A of the first unit 1UA is equal to the center-to-center distance between the first through conductor 20A of the second unit 1UB and the first through conductor 20A of the fourth unit 1UD.

[0136] When the capacitor unit 1U includes the fourth unit 1UD, it is preferable that Fig.11As shown, when viewed from above in the thickness direction of the capacitor array 1B, the first through conductor 20A of the fourth unit 1UD exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the second unit 1UB with the center of the first through conductor 20A of the first unit 1UA at an angle of 60 degrees or 120 degrees with the center of the first through conductor 20A of the second unit 1UB as a reference. In this case, it is sufficient that the smallest circle including the first through conductor 20A of the fourth unit 1UD exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the second unit 1UB with the center of the first through conductor 20A of the first unit 1UA at an angle of 60 degrees or 120 degrees with the center of the first through conductor 20A of the second unit 1UB as a reference.

[0137] like Figure 7 or Fig.10 As shown, in the case where the capacitor unit 1U includes a third unit 1UC, it is preferred that, when viewed from above in the thickness direction of the capacitor array 1A or 1B, the second through conductor 20B of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the first unit 1UA with the center of the second through conductor 20B of the second unit 1UB at an angle of 60 degrees, 90 degrees, 120 degrees or 180 degrees with the center of the second through conductor 20B of the first unit 1UA as a reference.

[0138] like Figure 7 or Fig.10 As shown, in the case where the capacitor unit 1U includes a fourth unit 1UD, it is preferred that, when viewed from above in the thickness direction of the capacitor array 1A or 1B, the second through conductor 20B of the fourth unit 1UD exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor 20B of the second unit 1UB with the center of the second through conductor 20B of the first unit 1UA at an angle of 60 degrees, 90 degrees, 120 degrees or 180 degrees with the center of the second through conductor 20B of the second unit 1UB as a reference.

[0139] like Figure 8 or Fig.11 As shown, in the case where the capacitor unit 1U includes a third unit 1UC, it is preferred that, when viewed from above in the thickness direction of the capacitor array 1A or 1B, the first through conductor 20A of the third unit 1UC exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the first unit 1UA with the center of the first through conductor 20A of the second unit 1UB at an angle of 60 degrees, 90 degrees, 120 degrees or 180 degrees with the center of the first through conductor 20A of the first unit 1UA as a reference.

[0140] like Figure 8 or Fig.11 As shown, in the case where the capacitor unit 1U includes a fourth unit 1UD, it is preferred that, when viewed from above in the thickness direction of the capacitor array 1A or 1B, the first through conductor 20A of the fourth unit 1UD exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor 20A of the second unit 1UB with the center of the first through conductor 20A of the first unit 1UA at an angle of 60 degrees, 90 degrees, 120 degrees or 180 degrees with the center of the first through conductor 20A of the second unit 1UB as a reference.

[0141] Fig.12 Yes means Figure 6 A top view of an example of a capacitor unit in the configuration shown.

[0142] Preferably, if Fig.12 As shown, in the capacitor array 1A (refer to Figure 6 ), when the center-to-center distance between the first through conductor 20A and the second through conductor 20B is P, the area of ​​the capacitor unit 1U is represented by 2P×P.

[0143] Fig.13 Yes means Fig. 9 A top view of an example of a capacitor unit in the configuration shown.

[0144] Preferably, if Fig.13 As shown, in the capacitor array 1B (refer to Fig. 9 ), when viewed from above in the thickness direction of the capacitor 1U, when the center-to-center distance between the first through conductor 20A and the second through conductor 20B is P, the area of ​​the capacitor unit 1U is express.

[0145] Hereinafter, the detailed structure of the capacitor array 1, 1A or 1B will be described.

[0146] As the plane shape of the capacitor unit 1U when viewed from the thickness direction, for example, a rectangle (square or rectangular), a quadrilateral other than a rectangle, a triangle, a pentagon, a hexagon or other polygon, a circle, an ellipse, a shape formed by combining these shapes, etc. In addition, the plane shape of the capacitor unit 1U may also be an L-shape, a C-shape (Japanese コ-shape), a step shape, etc.

[0147] Preferably, the anode plate 11 is made of a so-called valve metal that exhibits a valve action. Examples of the valve metal include metal monomers such as aluminum, tantalum, niobium, titanium, and zirconium, or alloys containing at least one of these metals. Among them, aluminum or an aluminum alloy is preferred.

[0148] The shape of the anode plate 11 is preferably a flat plate, and more preferably a foil. Thus, in this specification, "plate-like" also includes "foil-like".

[0149] The anode plate 11 only needs to have the porous portion 11B on at least one main surface of the core 11A. That is, the anode plate 11 may have the porous portion 11B on only one main surface of the core 11A, or may have the porous portion 11B on both main surfaces of the core 11A. The porous portion 11B is preferably a porous layer formed on the surface of the core 11A, and more preferably an etching layer.

[0150] The thickness of the anode plate 11 before etching is preferably 60 μm or more and 200 μm or less. The thickness of the core 11A that is not etched after etching is preferably 15 μm or more and 70 μm or less. The thickness of the porous portion 11B is designed to match the required withstand voltage and electrostatic capacitance, but preferably, the total thickness of the porous portions 11B on both sides of the core 11A is 10 μm or more and 180 μm or less.

[0151] The pore size of the porous portion 11B is preferably 10 nm or more and 600 nm or less. The pore size of the porous portion 11B refers to a median diameter D50 measured by a mercury porosimeter. The pore size of the porous portion 11B can be controlled by adjusting various conditions during etching, for example.

[0152] The dielectric layer 13 provided on the surface of the porous portion 11B is porous reflecting the surface state of the porous portion 11B and has a fine concavoconvex surface shape. Preferably, the dielectric layer 13 is composed of an oxide film of the above-mentioned valve-acting metal. For example, when an aluminum foil is used as the anode plate 11, the surface of the aluminum foil is subjected to an anodic oxidation treatment (also called chemical conversion treatment) in an aqueous solution containing ammonium adipate or the like, so that the dielectric layer 13 composed of an oxide film can be formed.

[0153] The thickness of the dielectric layer 13 is designed to match the required withstand voltage and electrostatic capacitance, but is preferably not less than 10 nm and not more than 100 nm.

[0154] In the case where the cathode layer 12 includes a solid electrolyte layer 12A, as a material constituting the solid electrolyte layer 12A, for example, conductive polymers such as polypyrroles, polythiophenes, and polyanilines can be cited. Among them, polythiophenes are preferred, and poly (3,4-ethylenedioxythiophene) called PEDOT is particularly preferred. In addition, the above-mentioned conductive polymer may also include a dopant such as polystyrene sulfonic acid (PSS). In addition, it is preferred that the solid electrolyte layer 12A includes an inner layer that fills the pores (recesses) of the dielectric layer 13 and an outer layer that covers the dielectric layer 13.

[0155] The thickness of solid electrolyte layer 12A from the surface of porous portion 11B is preferably 2 μm or more and 20 μm or less.

[0156] The solid electrolyte layer 12A is formed, for example, by a method of forming a polymer film of poly(3,4-ethylenedioxythiophene) or the like on the surface of the dielectric layer 13 using a treatment solution containing a monomer such as 3,4-ethylenedioxythiophene, or by a method of applying a dispersion of a polymer such as poly(3,4-ethylenedioxythiophene) or the like on the surface of the dielectric layer 13 and drying it.

[0157] The solid electrolyte layer 12A can be formed in a predetermined region by applying the above-mentioned treatment liquid or dispersion liquid to the surface of the dielectric layer 13 by a method such as sponge transfer, screen printing, dispenser coating, or inkjet printing.

[0158] When cathode layer 12 includes conductor layer 12B, conductor layer 12B includes at least one of a conductive resin layer and a metal layer. Conductor layer 12B may be only a conductive resin layer or only a metal layer. Preferably, conductor layer 12B covers the entire surface of solid electrolyte layer 12A.

[0159] Examples of the conductive resin layer include a conductive adhesive layer containing at least one conductive filler selected from the group consisting of a silver filler, a copper filler, a nickel filler, and a carbon filler.

[0160] As the metal layer, for example, metal plating, metal foil, etc. can be cited. Preferably, the metal layer is formed of at least one metal selected from the group consisting of nickel, copper, silver, and alloys containing these metals as main components. In addition, the "main component" refers to the element component with the largest weight ratio.

[0161] The conductor layer 12B includes, for example, a carbon layer provided on the surface of the solid electrolyte layer 12A and a copper layer provided on the surface of the carbon layer.

[0162] The carbon layer is provided to electrically and mechanically connect the solid electrolyte layer 12A to the copper layer. The carbon layer can be formed in a predetermined area by applying carbon paste to the surface of the solid electrolyte layer 12A by sponge transfer, screen printing, dispenser coating, inkjet printing, etc. In addition, it is preferred that the carbon layer is laminated with the copper layer of the next process in a sticky state before drying. The thickness of the carbon layer is preferably 2 μm or more and 20 μm or less.

[0163] The copper layer can be formed in a predetermined region by applying a copper paste to the surface of the carbon layer by sponge transfer, screen printing, spray coating, dispenser coating, inkjet printing, etc. The thickness of the copper layer is preferably 2 μm or more and 20 μm or less.

[0164] The first through-conductor 20A is formed, for example, as follows. First, a first through-hole 50A is formed that penetrates the sealing layer 30 and the capacitor element 10 in the thickness direction by drilling, laser processing, or the like. Then, the first through-conductor 20A is formed by metallizing the inner wall surface of the first through-hole 50A with a metal material containing a metal with low resistance such as copper, gold, or silver. When forming the first through-conductor 20A, for example, the inner wall surface of the first through-hole 50A is metallized by a process such as an electroless copper plating process or an electrolytic copper plating process, thereby facilitating the processing. In addition, as for the method of forming the first through-conductor 20A, in addition to the method of metallizing the inner wall surface of the first through-hole 50A, a method of filling the first through-hole 50A with a metal material, a composite material of metal and resin, or the like may also be used.

[0165] The second through conductor 20B is formed, for example, as follows. First, a through hole is formed that penetrates the capacitor element 10 in the thickness direction by drilling, laser processing, etc. Next, an insulating material such as a sealing layer 30 is filled in the through hole. The second through hole 50B is formed by drilling, laser processing, etc. on the portion filled with the insulating material. At this time, the diameter of the second through hole 50B is made smaller than the diameter of the through hole filled with the insulating material, so that the insulating material exists between the inner wall surface of the through hole filled with the insulating material and the inner wall surface of the second through hole 50B in the plane direction. Afterwards, the inner wall surface of the second through hole 50B is metallized with a metal material containing a low-resistance metal such as copper, gold, and silver to form the second through conductor 20B. When forming the second through-conductor 20B, for example, the inner wall surface of the second through-hole 50B is metalized by electroless copper plating, electrolytic copper plating, etc., so that processing becomes easy. In addition, as for the method of forming the second through-conductor 20B, in addition to the method of metalizing the inner wall surface of the second through-hole 50B, a method of filling the second through-hole 50B with a metal material, a composite material of metal and resin, etc. may be used.

[0166] When the first resin filling portion 25A is provided inside the first through conductor 20A, the first resin filling portion 25A may be a conductor or an insulator. The thermal expansion coefficient of the material constituting the first resin filling portion 25A may be larger, smaller, or the same as the thermal expansion coefficient of the material constituting the first through conductor 20A (e.g., copper).

[0167] When the second resin filling portion 25B is provided inside the second through conductor 20B, the second resin filling portion 25B may be a conductor or an insulator. The thermal expansion coefficient of the material constituting the second resin filling portion 25B may be larger, smaller, or the same as the thermal expansion coefficient of the material constituting the second through conductor 20B (e.g., copper).

[0168] The sealing layer 30 is made of an insulating material. In this case, it is preferable that the sealing layer 30 is made of an insulating resin.

[0169] Examples of the insulating resin constituting the sealing layer 30 include epoxy resin and phenol resin.

[0170] Preferably, the sealing layer 30 further contains a filler.

[0171] Examples of the filler contained in the sealing layer 30 include inorganic fillers such as silica particles and alumina particles.

[0172] The sealing layer 30 may be composed of only one layer or may be composed of two or more layers. When the sealing layer 30 is composed of two or more layers, the materials constituting the respective layers may be the same or different.

[0173] Sealing layer 30 is formed so as to seal capacitor element 10 by, for example, a method of thermocompression bonding an insulating resin sheet or a method of applying an insulating resin paste and then thermally curing the paste.

[0174] For example, a layer such as a stress relaxation layer or a moisture-proof film may be provided between capacitor element 10 and sealing layer 30 .

[0175] The insulating layer 35 is made of an insulating material. In this case, it is preferable that the insulating layer 35 is made of an insulating resin.

[0176] Examples of the insulating resin constituting the insulating layer 35 include polyphenylsulfone resin, polyethersulfone resin, cyanate resin, fluororesin (tetrafluoroethylene, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, etc.), polyimide resin, polyamideimide resin, epoxy resin, and derivatives or precursors thereof.

[0177] Insulating layer 35 may be made of the same resin as sealing layer 30. If insulating layer 35 contains an inorganic filler different from sealing layer 30, it may adversely affect the effective capacitance portion of capacitor element 10. Therefore, insulating layer 35 is preferably made of a single resin.

[0178] The insulating layer 35 can be formed in a predetermined region by applying a masking material such as a composition containing an insulating resin to the surface of the porous portion 11B by a method such as sponge transfer, screen printing, dispenser coating, or inkjet printing.

[0179] The insulating layer 35 may be formed in the porous portion 11B before or after the dielectric layer 13 is formed.

[0180] Examples of the constituent material of the first conductive wiring layer 40A include metal materials containing low-resistance metals such as silver, gold, and copper. In this case, the first conductive wiring layer 40A is formed by, for example, plating the surface of the first through conductor 20A.

[0181] In order to improve the close fit between the first conductor wiring layer 40A and other components, here, in order to improve the close fit between the first conductor wiring layer 40A and the first through conductor 20A, as the constituent material of the first conductor wiring layer 40A, a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler and carbon filler and resin can be used.

[0182] Examples of the constituent material of the second conductive wiring layer 40B include metal materials containing low-resistance metals such as silver, gold, and copper. In this case, the second conductive wiring layer 40B is formed by, for example, plating the surface of the second through conductor 20B.

[0183] In order to improve the close fit between the second conductor wiring layer 40B and other components, here, in order to improve the close fit between the second conductor wiring layer 40B and the second through conductor 20B, a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler and carbon filler and resin can be used as the constituent material of the second conductor wiring layer 40B.

[0184] It is preferable that the constituent materials of the first conductive wiring layer 40A and the second conductive wiring layer 40B are the same in at least the type, but they may be different from each other.

[0185] Examples of the constituent material of via conductor 45 include metal materials containing low-resistance metals such as silver, gold, and copper.

[0186] Via conductor 45 is formed, for example, by plating the inner wall surface of a through hole penetrating sealing layer 30 in the thickness direction with the above-mentioned metal material or by filling the through hole with a conductive paste and then performing a heat treatment.

[0187] The capacitor array of the present invention is not limited to the above-described embodiment, and various applications and modifications can be made to the structure, manufacturing conditions, etc. of the capacitor array within the scope of the present invention.

[0188] The capacitor array of the present invention can be appropriately used as a constituent material of a composite electronic component. Such a composite electronic component includes, for example: the capacitor array of the present invention; external electrodes (for example, a first conductor wiring layer and a second conductor wiring layer) disposed outside the sealing layer of the capacitor array and electrically connected to the first electrode layer and the second electrode layer of the capacitor element, respectively; and an electronic component connected to the external electrodes.

[0189] In the composite electronic component, the electronic component connected to the external electrode may be either a passive element or an active element. Both the passive element and the active element may be connected to the external electrode, or either the passive element or the active element may be connected to the external electrode. Furthermore, a composite of the passive element and the active element may be connected to the external electrode.

[0190] Examples of passive components include inductors, etc. Examples of active components include memories, GPUs (Graphical Processing Units), CPUs (Central Processing Units), MPUs (Micro Processing Units), and PMICs (Power Management ICs).

[0191] The capacitor array of the present invention has a sheet-like shape as a whole. Therefore, in the composite electronic component, the capacitor array can be treated like a mounting substrate, and the electronic components can be mounted on the capacitor array. Moreover, by setting the shape of the electronic components mounted on the capacitor array to be sheet-like, the capacitor array and the electronic components can be connected in the thickness direction via through-hole conductors that penetrate each electronic component in the thickness direction. As a result, active components and passive components can be configured as batch modules.

[0192] For example, the capacitor array of the present invention can be electrically connected between a voltage regulator including a semiconductor active element and a load to which the converted DC voltage is supplied, thereby forming a switching regulator.

[0193] In the composite electronic component, a circuit layer may be formed on any surface of a capacitor matrix sheet in which a plurality of capacitors of the present invention are further arranged, and then connected to a passive element or an active element.

[0194] Alternatively, the capacitor array of the present invention may be arranged in a cavity pre-formed in the substrate, embedded in resin, and then a circuit layer may be formed on the resin. Alternatively, other electronic components (passive or active components) may be mounted in other cavities of the substrate.

[0195] Alternatively, the capacitor array of the present invention may be mounted on a smooth carrier such as a wafer or glass, and a circuit layer may be formed after the outer layer is formed with resin, and then connected to passive elements or active elements.

[0196] The following contents are disclosed in this specification.

[0197] <1>

[0198] A capacitor array includes a plurality of capacitor units arranged in a plane direction, wherein:

[0199] The capacitor units each include a capacitor element, a first through conductor, and a second through conductor.

[0200] The capacitor element comprises a first electrode layer, a second electrode layer and a dielectric layer.

[0201] The first electrode layer and the second electrode layer are opposed to each other in a thickness direction perpendicular to the planar direction via the dielectric layer.

[0202] The first through conductor is provided on at least an inner wall surface of a first through hole penetrating the capacitor element in the thickness direction and is electrically connected to the first electrode layer.

[0203] The second through conductor is provided on at least an inner wall surface of a second through hole penetrating the capacitor element in the thickness direction and is electrically connected to the second electrode layer.

[0204] When viewed from above in the thickness direction of the capacitor array, the area of ​​the capacitor unit, the diameter of the first through hole, the area of ​​the first through conductor in the first through hole, the diameter of the second through hole, the area of ​​the second through conductor in the second through hole, and the center-to-center distance between the first through conductor and the second through conductor are equal between the capacitor units.

[0205] The area of ​​the first through conductor in the first through hole of the capacitor unit is S. TH1 , the area of ​​the second through conductor in the second through hole is S TH2 When the total number of the capacitor units included in the capacitor array is N, the electrostatic capacitance C of each unit is obtained from the virtual units that satisfy all of the following conditions 1 to 4. unitWith respect to the center distance p between the first through conductor and the second through conductor, the capacitance C of each unit is unit The total number n of the above-mentioned imaginary units corresponding to the above-mentioned center-to-center distance p when the maximum value is taken multiplied by the electrostatic capacitance C of each of the above-mentioned units unit The actual overall capacitance of the capacitor array as a whole, which is equivalent to the capacitance of the total area of ​​the capacitor units, is larger than the hypothetical overall capacitance obtained by taking the maximum value of

[0206] Condition 1: The total number of the virtual units included in the capacitor array is n,

[0207] Condition 2: When viewed from above in the thickness direction of the capacitor array, the area of ​​the imaginary unit, the diameter of the first through hole, the area of ​​the first through conductor in the first through hole, the diameter of the second through hole, the area of ​​the second through conductor in the second through hole, and the center-to-center distance between the first through conductor and the second through conductor are equal between the imaginary units,

[0208] Condition 3: The area of ​​the first through-conductor in the first through-hole of the virtual unit is s th1 , the area of ​​the second through conductor in the second through hole is s th2 ,

[0209] Condition 4: (s th1 +s th2 )×n value and (S TH1 +S TH2 )×N are equal.

[0210] <2>

[0211] The capacitor array according to <1>, wherein:

[0212] The capacitor unit includes a first unit and a second unit adjacent to the first unit.

[0213] When viewed from above in the thickness direction of the capacitor array, a center-to-center distance between the first through conductor of the first unit and the second through conductor of the first unit is equal to a center-to-center distance between the first through conductor of the first unit and the second through conductor of the second unit.

[0214] <3>

[0215] The capacitor array according to <2>, wherein:

[0216] The capacitor unit further includes a third unit adjacent to the first unit.

[0217] When viewed from above in the thickness direction of the capacitor array, a center-to-center distance between the second through conductor of the first unit and the second through conductor of the second unit is equal to a center-to-center distance between the second through conductor of the first unit and the second through conductor of the third unit.

[0218] <4>

[0219] The capacitor array according to <3>, wherein:

[0220] When viewed from above in the thickness direction of the capacitor array, the second through conductor of the third unit exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor of the first unit with the center of the second through conductor of the second unit at an angle of 60 degrees, 90 degrees, 120 degrees or 180 degrees with respect to the center of the second through conductor of the first unit.

[0221] <5>

[0222] The capacitor array according to <3> or <4>, wherein:

[0223] The capacitor unit further includes a fourth unit adjacent to the first unit.

[0224] When viewed from above in the thickness direction of the capacitor array, a center-to-center distance between the second through conductor of the second unit and the second through conductor of the first unit is equal to a center-to-center distance between the second through conductor of the second unit and the second through conductor of the fourth unit.

[0225] <6>

[0226] The capacitor array according to any one of <2> to <5>, wherein:

[0227] When viewed from above in the thickness direction of the capacitor array, a center-to-center distance between the second through conductor of the first unit and the first through conductor of the first unit is equal to a center-to-center distance between the second through conductor of the first unit and the first through conductor of the second unit.

[0228] <7>

[0229] The capacitor array according to <6>, wherein:

[0230] The capacitor unit further includes a third unit adjacent to the first unit.

[0231] When viewed from above in the thickness direction of the capacitor array, a center-to-center distance between the first through conductor of the first unit and the first through conductor of the second unit is equal to a center-to-center distance between the first through conductor of the first unit and the first through conductor of the third unit.

[0232] <8>

[0233] The capacitor array according to <7>, wherein:

[0234] When viewed from above in the thickness direction of the capacitor array, the first through conductor of the third unit exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor of the first unit with the center of the first through conductor of the second unit at an angle of 60 degrees, 90 degrees, 120 degrees or 180 degrees with respect to the center of the first through conductor of the first unit.

[0235] <9>

[0236] The capacitor array according to <7> or <8>, wherein:

[0237] The capacitor unit further includes a fourth unit adjacent to the first unit.

[0238] When viewed from above in the thickness direction of the capacitor array, a center-to-center distance between the first through conductor of the second unit and the first through conductor of the first unit is equal to a center-to-center distance between the first through conductor of the second unit and the first through conductor of the fourth unit.

[0239] <10>

[0240] The capacitor array according to <1>, wherein:

[0241] The capacitor unit includes a first unit and a second unit adjacent to the first unit.

[0242] When viewed from above in the thickness direction of the capacitor array, a center-to-center distance between the second through conductor of the first unit and the first through conductor of the first unit is equal to a center-to-center distance between the second through conductor of the first unit and the first through conductor of the second unit.

[0243] <11>

[0244] The capacitor array according to <10>, wherein:

[0245] The capacitor unit further includes a third unit adjacent to the first unit.

[0246] When viewed from above in the thickness direction of the capacitor array, a center-to-center distance between the first through conductor of the first unit and the first through conductor of the second unit is equal to a center-to-center distance between the first through conductor of the first unit and the first through conductor of the third unit.

[0247] <12>

[0248] The capacitor array according to <11>, wherein:

[0249] When viewed from above in the thickness direction of the capacitor array, the first through conductor of the third unit exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor of the first unit with the center of the first through conductor of the second unit at an angle of 60 degrees, 90 degrees, 120 degrees or 180 degrees with respect to the center of the first through conductor of the first unit.

[0250] <13>

[0251] The capacitor array according to <11> or <12>, wherein:

[0252] The capacitor unit further includes a fourth unit adjacent to the first unit.

[0253] When viewed from above in the thickness direction of the capacitor array, a center-to-center distance between the first through conductor of the second unit and the first through conductor of the first unit is equal to a center-to-center distance between the first through conductor of the second unit and the first through conductor of the fourth unit.

[0254] <14>

[0255] The capacitor array according to any one of <1> to <13>, wherein:

[0256] When the capacitor array is viewed from above in the thickness direction, when the center-to-center distance between the first through conductor and the second through conductor is P, the area of ​​the capacitor unit is express.

[0257] <15>

[0258] The capacitor array according to any one of <1> to <13>, wherein:

[0259] When the capacitor array is viewed in plan from the thickness direction, and when a distance between centers of the first through conductor and the second through conductor is P, an area of ​​the capacitor cell is represented by 2P×P.

[0260] <16>

[0261] The capacitor array according to any one of <1> to <15>, wherein:

[0262] In the capacitor unit, the diameter of the first through hole is equal to the diameter of the second through hole.

[0263] <17>

[0264] The capacitor array according to any one of <1> to <16>, wherein:

[0265] In the capacitor unit, an area of ​​the first through-conductor in the first through-hole is equal to an area of ​​the second through-conductor in the second through-hole.

[0266] <18>

[0267] The capacitor array according to any one of <1> to <17>, wherein:

[0268] The first electrode layer is an anode plate having a core portion and a porous portion, wherein the core portion is made of metal and the porous portion is provided on at least one main surface of the core portion.

[0269] The dielectric layer is provided on the surface of the porous portion.

[0270] The second electrode layer is a cathode layer provided on the surface of the dielectric layer.

[0271] <19>

[0272] The capacitor array according to <18>, wherein:

[0273] The first through conductor is electrically connected to the anode plate at an inner wall surface of the first through hole.

[0274] <20>

[0275] The capacitor array according to <18> or <19>, wherein:

[0276] The cathode layer includes a solid electrolyte layer provided on a surface of the dielectric layer.

[0277] Description of Reference Numerals

[0278] 1, 1A, 1B, capacitor array; 1U, capacitor unit; 1UA, first unit; 1UB, second unit; 1UC, third unit; 1UD, fourth unit; 10, capacitor element; 11, anode plate (first electrode layer); 11A, core; 11B, porous portion; 12, cathode layer (second electrode layer); 12A, solid electrolyte layer; 12B, conductor layer; 13, dielectric layer; 20A, first through conductor; 20B, second through conductor; 25A, first resin filling portion; 25B, second resin filling portion; 30, sealing layer; 35, insulating layer; 40A, first conductor wiring layer; 40B, second conductor wiring layer; 45, via conductor; 50A, first through hole; 50B, second through hole; D TH1 , the diameter of the first through hole; D TH2 , the diameter of the second through hole; P, the distance between the centers of the first through conductor and the second through conductor.

Claims

1. A capacitor array comprising a plurality of capacitor units arranged in a plane direction, wherein: The capacitor units each include a capacitor element, a first through conductor, and a second through conductor. The capacitor element includes a first electrode layer, a second electrode layer, and a dielectric layer. The first electrode layer and the second electrode layer are opposed to each other in a thickness direction perpendicular to the planar direction via the dielectric layer. The first through conductor is provided on at least an inner wall surface of a first through hole penetrating the capacitor element in the thickness direction and is electrically connected to the first electrode layer. The second through conductor is provided on at least an inner wall surface of a second through hole penetrating the capacitor element in the thickness direction and is electrically connected to the second electrode layer. When the capacitor array is viewed from above in the thickness direction, the area of ​​the capacitor unit, the diameter of the first through hole, the area of ​​the first through conductor in the first through hole, the diameter of the second through hole, the area of ​​the second through conductor in the second through hole, and the center-to-center distance between the first through conductor and the second through conductor are equal between the capacitor units. The area of ​​the first through conductor in the first through hole of the capacitor unit is S. TH1 , the area of ​​the second through conductor in the second through hole is S TH2 When the total number of the capacitor units included in the capacitor array is N, the electrostatic capacitance C of each unit is obtained from the virtual units that satisfy all of the following conditions 1 to 4: unit With respect to the center distance p between the first through conductor and the second through conductor, the electrostatic capacitance C per unit is unit The total number n of the imaginary cells corresponding to the center-to-center distance p when the maximum value is taken multiplied by the electrostatic capacitance C of each cell unit The actual overall capacitance of the capacitor array as a whole, which is equivalent to the capacitance of the total area of ​​the capacitor units, is larger than the hypothetical overall capacitance obtained by taking the maximum value of Condition 1: The total number of the imaginary cells included in the capacitor array is n, Condition 2: When viewed from above in the thickness direction of the capacitor array, the area of ​​the imaginary unit, the diameter of the first through hole, the area of ​​the first through conductor in the first through hole, the diameter of the second through hole, the area of ​​the second through conductor in the second through hole, and the distance between the centers of the first through conductor and the second through conductor are equal between the imaginary units, Condition 3: The area of ​​the first through-conductor in the first through-hole of the virtual cell is s th1 , the area of ​​the second through conductor in the second through hole is s th2 , Condition 4: (s th1 +s th2 )×n value and (S TH1 +S TH2 )×N are equal.

2. The capacitor array according to claim 1, wherein: The capacitor unit includes a first unit and a second unit adjacent to the first unit. When viewed in plan from the thickness direction of the capacitor array, a center-to-center distance between the first through conductor of the first unit and the second through conductor of the first unit is equal to a center-to-center distance between the first through conductor of the first unit and the second through conductor of the second unit.

3. The capacitor array according to claim 2, wherein: The capacitor unit further includes a third unit adjacent to the first unit. When viewed in plan from the thickness direction of the capacitor array, a center-to-center distance between the second through conductor of the first unit and the second through conductor of the second unit is equal to a center-to-center distance between the second through conductor of the first unit and the second through conductor of the third unit.

4. The capacitor array according to claim 3, wherein: When viewed from above in the thickness direction of the capacitor array, the second through conductor of the third unit exists on a straight line obtained by rotating a line segment connecting the center of the second through conductor of the first unit with the center of the second through conductor of the second unit at an angle of 60 degrees, 90 degrees, 120 degrees or 180 degrees with respect to the center of the second through conductor of the first unit.

5. The capacitor array according to claim 3 or 4, wherein: The capacitor unit further includes a fourth unit adjacent to the first unit, When viewed in plan from the thickness direction of the capacitor array, a center-to-center distance between the second through conductor of the second unit and the second through conductor of the first unit is equal to a center-to-center distance between the second through conductor of the second unit and the second through conductor of the fourth unit.

6. The capacitor array according to any one of claims 2 to 5, wherein: When viewed in plan from the thickness direction of the capacitor array, a center-to-center distance between the second through conductor of the first unit and the first through conductor of the first unit is equal to a center-to-center distance between the second through conductor of the first unit and the first through conductor of the second unit.

7. The capacitor array according to claim 6, wherein: The capacitor unit further includes a third unit adjacent to the first unit. When viewed in plan from the thickness direction of the capacitor array, a center-to-center distance between the first through conductor of the first unit and the first through conductor of the second unit is equal to a center-to-center distance between the first through conductor of the first unit and the first through conductor of the third unit.

8. The capacitor array according to claim 7, wherein: When viewed from above in the thickness direction of the capacitor array, the first through conductor of the third unit exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor of the first unit with the center of the first through conductor of the second unit at an angle of 60 degrees, 90 degrees, 120 degrees or 180 degrees with respect to the center of the first through conductor of the first unit.

9. The capacitor array according to claim 7 or 8, wherein: The capacitor unit further includes a fourth unit adjacent to the first unit, When viewed in plan from the thickness direction of the capacitor array, a center-to-center distance between the first through conductor of the second unit and the first through conductor of the first unit is equal to a center-to-center distance between the first through conductor of the second unit and the first through conductor of the fourth unit.

10. The capacitor array according to claim 1, wherein: The capacitor unit includes a first unit and a second unit adjacent to the first unit. When viewed in plan from the thickness direction of the capacitor array, a center-to-center distance between the second through conductor of the first unit and the first through conductor of the first unit is equal to a center-to-center distance between the second through conductor of the first unit and the first through conductor of the second unit.

11. The capacitor array according to claim 10, wherein: The capacitor unit further includes a third unit adjacent to the first unit. When viewed in plan from the thickness direction of the capacitor array, a center-to-center distance between the first through conductor of the first unit and the first through conductor of the second unit is equal to a center-to-center distance between the first through conductor of the first unit and the first through conductor of the third unit.

12. The capacitor array according to claim 11, wherein: When viewed from above in the thickness direction of the capacitor array, the first through conductor of the third unit exists on a straight line obtained by rotating a line segment connecting the center of the first through conductor of the first unit with the center of the first through conductor of the second unit at an angle of 60 degrees, 90 degrees, 120 degrees or 180 degrees with respect to the center of the first through conductor of the first unit.

13. The capacitor array according to claim 11 or 12, wherein: The capacitor unit further includes a fourth unit adjacent to the first unit, When viewed in plan from the thickness direction of the capacitor array, a center-to-center distance between the first through conductor of the second unit and the first through conductor of the first unit is equal to a center-to-center distance between the first through conductor of the second unit and the first through conductor of the fourth unit.

14. The capacitor array according to any one of claims 1 to 13, wherein: When the capacitor array is viewed from above in the thickness direction, when the center-to-center distance between the first through conductor and the second through conductor is P, the area of ​​the capacitor unit is given by express.

15. The capacitor array according to any one of claims 1 to 13, wherein: When the capacitor array is viewed in plan from the thickness direction, and the distance between the centers of the first through conductor and the second through conductor is P, the area of ​​the capacitor cell is represented by 2P×P.

16. The capacitor array according to any one of claims 1 to 15, wherein: In the same capacitor unit, the diameter of the first through hole is equal to the diameter of the second through hole.

17. The capacitor array according to any one of claims 1 to 16, wherein: In the same capacitor unit, an area of ​​the first through-conductor in the first through-hole is equal to an area of ​​the second through-conductor in the second through-hole.

18. The capacitor array according to any one of claims 1 to 17, wherein: The first electrode layer is an anode plate having a core portion and a porous portion, the core portion being made of metal, and the porous portion being provided on at least one main surface of the core portion. The dielectric layer is provided on the surface of the porous portion. The second electrode layer is a cathode layer provided on the surface of the dielectric layer.

19. The capacitor array according to claim 18, wherein: The first through conductor is electrically connected to the anode plate at an inner wall surface of the first through hole.

20. The capacitor array according to claim 18 or 19, wherein: The cathode layer includes a solid electrolyte layer provided on a surface of the dielectric layer.

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