A deposition system for the production of chemical vapor deposition silicon carbide rings

Abstract

A deposition system for the production of chemical vapor deposition silicon carbide rings, which relates to the field of high-end equipment manufacturing. The deposition system for the production of chemical vapor deposition silicon carbide rings includes: a furnace body, which has a reaction chamber and a heating module inside; a plurality of nozzle groups, all of which are connected with gas pipelines; a bottom cover, a graphite support is installed on the inner bottom of the bottom cover, and the graphite support is used to support the annular single crystal substrate, and the graphite support is detachable; a stabilizing mechanism, which includes a lifting seat, a support arm is fixed on the lifting seat, and a clamping component is installed on the support arm; a conveying mechanism and a lifting mechanism, through the nozzle groups, the gas containing silicon and carbon is sprayed into the furnace body, so that the gas containing silicon and carbon can be quickly and evenly dispersed into the reaction chamber in the furnace body, so as to ensure the deposition rate and uniformity of silicon carbide on the annular single crystal substrate. The detachable graphite support is formed by combining a plurality of assembling columns, horizontal support rods and clamping pins. By adjusting the number of assembling columns, the influence of the graphite support on the air flow is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of high-end equipment manufacturing, and particularly to a deposition system for producing chemical vapor deposition silicon carbide rings. Background Art

[0002] As a third-generation semiconductor material, silicon carbide has excellent heat resistance, corrosion resistance, oxidation resistance and thermal shock resistance. It is a material with broad application prospects in high-temperature semiconductors, high-temperature structural materials and semiconductor components. For sintered silicon carbide, generally a high temperature above 2000°C is required during the manufacturing process, and due to the presence of sintering additives and pores, it has the disadvantage of low purity; while silicon carbide manufactured by chemical vapor deposition (chemical vapor deposition SiC, CVD-SiC) uses gases containing silicon (Si) and carbon (C), and is relatively heated at about 1200 to 1500°C, reducing the required temperature. Since the silicon carbide solid is formed on a single-crystal substrate using gases at a lower temperature, it has the advantages of being dense and having high purity. In the existing chemical vapor deposition system for silicon carbide epitaxial growth, basically, sources containing Si and C are injected into a reactor with a heating function, and the single-crystal substrate is placed into the reactor through a graphite bracket, and finally an epitaxial layer is grown through a chemical reaction on the surface of the single-crystal substrate.

[0003] However, when placing the single-crystal substrate, due to the limited space inside the equipment, if the single-crystal substrates are stacked too densely, it will cause poor circulation of the gases containing silicon and carbon in the reactor, and if the single-crystal substrates are stacked too few, it will cause too fast gas flow rate in the reactor. Therefore, the above situations are likely to have a greater impact on the production efficiency and quality of chemical vapor deposition silicon carbide solids, and since the single-crystal substrate is relatively thin, it is difficult to maintain the stability of the single-crystal substrate while reducing the volume of the graphite bracket. Summary of the Invention

[0004] The technical problem to be solved by the present invention is: to solve the problem that the graphite bracket and the single-crystal substrate are likely to affect the flow of the gases containing silicon and carbon in the reactor, the present invention provides a deposition system for producing chemical vapor deposition silicon carbide rings to solve the above problem.

[0005] The technical solution adopted by the present invention to solve its technical problem is:

[0006] A deposition system for the production of chemical vapor deposition silicon carbide rings, comprising a furnace body with a reaction chamber therein, and a heating module provided in the furnace body for supplying heat energy to the reaction chamber; a spray head group, with multiple spray head groups provided, and the multiple spray head groups penetrate through the furnace body and are fixed on the side wall of the furnace body, and each of the multiple spray head groups is connected with a gas pipeline, and the gas pipeline conveys gas into the reaction chamber through the spray head group; a bottom cover for sealing the bottom of the furnace body; multiple graphite brackets and multiple annular single crystal substrates, the graphite brackets are installed on the inner bottom of the bottom cover, and the graphite brackets are used for supporting the annular single crystal substrates, and the graphite brackets are detachable, and after the bottom cover is connected to the furnace body, both the graphite brackets and the annular single crystal substrates are located in the reaction chamber; a stabilizing mechanism, the stabilizing mechanism includes a lifting seat, a support arm and a clamping assembly, the support arm is fixed on the lifting seat, and the clamping assembly is installed on the support arm, and when assembling the graphite bracket, the lifting seat drives the clamping assembly to move up and down so as to support different parts of the graphite bracket; a conveying mechanism and a lifting mechanism, the conveying mechanism is used for transporting the bottom cover to the lower part of the furnace body, and the lifting mechanism is used for lifting the bottom cover to be engaged with the bottom of the furnace body.

[0007] Preferably, four spray head groups are provided, and the four spray head groups are arranged at equal intervals along the circumferential direction of the furnace body. Each spray head group includes multiple nozzles, and the multiple nozzles are fixed on the side wall of the furnace body at equal intervals from top to bottom.

[0008] Preferably, the graphite bracket includes a support column, an assembling column and an insertion shaft. The support column is fixed on the inner bottom of the bottom cover. The tops of the support column and the assembling column are provided with clamping protrusions, and the bottom of the assembling column is provided with a clamping groove. The clamping protrusion can be engaged with the clamping groove. The multiple assembling columns are stacked on the top of the support column in sequence. The insertion shaft is inserted into the center of the assembling column for connecting the support column and the multiple assembling columns. Three horizontally arranged support rods are fixed on the circumferential surface of each assembling column at equal intervals, and a vertically upward clamping pin is fixed at the end of each horizontally arranged support rod. The annular single crystal substrate is placed on the top of the clamping pin.

[0009] Preferably, the clamping assembly includes an inner gear ring, an outer gear ring, a gear ring bracket, a gear set, multiple fixed shafts and multiple chucks. The inner circle of the inner gear ring and the outer circle of the outer gear ring are respectively engaged with the gear set, and the gear set can drive the inner gear ring and the outer gear ring to rotate in opposite directions. The bottoms of the inner gear ring and the outer gear ring are rotatably installed on the top of the gear ring bracket. The multiple chucks are rotatably installed on the fixed shafts, and the fixed shafts are fixed to the bottom of the gear ring bracket through connecting blocks. The fronts of the multiple chucks all face the graphite bracket, and the inner gear ring and the outer gear ring are used to drive the chucks to clamp or loosen the graphite bracket.

[0010] Preferably, the chuck further includes a first jaw and a second jaw. The middle sections of the first jaw and the second jaw are cross - arranged and the cross - section is rotatably connected to the fixed shaft. Waist - shaped holes are provided at the tail ends of both the first jaw and the second jaw. A first sliding column is arranged in the waist - shaped hole at the tail end of the first jaw, and the bottom of the first sliding column is fixedly connected to the upper surface of the outer tooth ring through a connecting piece. A second sliding column is arranged in the waist - shaped hole at the tail end of the second jaw, and the bottom of the second sliding column is fixedly connected to the upper surface of the inner tooth ring.

[0011] Preferably, the gear set includes a gear seat, a driving gear, and two driven gears. The driving gear and the two driven gears are rotatably installed side by side on the gear seat. The gear seat is fixed to the bottom of the tooth ring bracket. The two driven gears are located on both sides of the driving gear so that the driving gear drives the two driven gears to rotate in opposite directions. The two driven gears are respectively meshed with the inner side of the inner tooth ring and the outer side of the outer tooth ring. The driving gear is driven to rotate by a servo motor.

[0012] Preferably, the conveying mechanism includes a track, a platform truck, and a fixing frame. The bottom cover is installed on the platform truck through the fixing frame. The track is laid under the platform truck and extends to the bottom of the lifting mechanism.

[0013] Preferably, the lifting mechanism includes a support frame, a bottom bracket, a bearing bracket, a guide rail, and a lead screw. The furnace body is fixed to the top of the support frame. An ascending channel is formed at the center of the support frame. The bottom bracket is fixed to both sides of the track and is higher than the track. The upper end of the guide rail is fixedly connected to the top of the support frame, and the lower end of the guide rail is fixedly connected to the bottom bracket. The bearing bracket is slidably installed on the guide rail. The lead screw is threadedly connected to the bearing bracket. Rotation of the lead screw can drive the bearing bracket to ascend or descend along the guide rail. A clamping block is fixed to the side of the platform truck, and a limiting groove is provided on the bearing bracket. When the platform truck moves along the track to the position of the bearing bracket, the clamping block is located above the bearing bracket. When the bearing bracket moves upward, the clamping block can enter the limiting groove and engage with the limiting groove.

[0014] Preferably, the upper end of the lead screw is connected to the output shaft of the motor through a worm - gear speed reducer, and the worm - gear speed reducer is fixed to the support frame.

[0015] The beneficial effects of the present invention are as follows: there is a spray head group and a detachable graphite support. The gas containing silicon and carbon is sprayed into the furnace body through the spray head group, so that the gas containing silicon and carbon can be quickly and evenly dispersed into the reaction chamber in the furnace body, ensuring the deposition rate and uniformity of silicon carbide on the annular single crystal substrate. The detachable graphite support is formed by combining multiple assembly columns, horizontal support rods and clamping pins. By adjusting the number of assembly columns, it is possible to avoid the graphite support occupying too much space in the reaction chamber, thereby reducing the influence of the graphite support on the air flow. Description of the Drawings

[0016] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only exemplary, and for those of ordinary skill in the art, without creative efforts, other implementation drawings can also be obtained based on the provided drawings.

[0017] Figure 1 It is a schematic structural diagram of the optimal embodiment of a deposition system for producing silicon carbide rings by chemical vapor deposition according to the present invention;

[0018] Figure 2 It is a schematic structural diagram of the bottom cover of a deposition system for producing silicon carbide rings by chemical vapor deposition according to the present invention;

[0019] Figure 3 It is a schematic structural diagram of the assembly column of a deposition system for producing silicon carbide rings by chemical vapor deposition according to the present invention;

[0020] Figure 4 It is a schematic structural diagram of the lifting seat of a deposition system for producing silicon carbide rings by chemical vapor deposition according to the present invention;

[0021] Figure 5 It is a schematic structural diagram of the gear seat of a deposition system for producing silicon carbide rings by chemical vapor deposition according to the present invention;

[0022] Figure 6 It is a schematic structural diagram of the chuck of a deposition system for producing silicon carbide rings by chemical vapor deposition according to the present invention;

[0023] Figure 7 It is a schematic structural diagram of the internal gear ring and external gear ring of a deposition system for producing silicon carbide rings by chemical vapor deposition according to the present invention;

[0024] Figure 8 It is a schematic structural diagram of the support bracket of a deposition system for producing silicon carbide rings by chemical vapor deposition according to the present invention.

[0025] The meanings of the reference numerals are as follows:

[0026] In the attached drawings: 1. Furnace body; 2. Worm and worm gear reducer; 3. Sprayer group; 4. Bottom cover; 5. Graphite bracket; 6. Annular single crystal substrate; 7. Lifting seat; 8. Support arm; 9. Clamping assembly; 10. Conveyor mechanism; 11. Lifting mechanism; 12. Support column; 13. Assembly column; 14. Insertion shaft; 15. Clamping projection; 16. Card slot; 17. Horizontal support rod; 18. Card pin; 19. Internal gear ring; 20. External gear ring; 21. Gear ring bracket; 22. Gear set; 23. Fixed shaft; 24. Chuck; 25. Connecting block; 26. First jaw; 27. Second jaw; 28. First sliding column; 29. Second sliding column; 30. Gear seat; 31. Driving gear; 32. Driven gear; 33. Track; 34. Platform truck; 35. Fixed frame; 36. Support frame; 37. Bottom bracket; 38. Bracket; 39. Guide rail; 40. Lead screw; 41. Block; 42. Limit slot. Detailed implementation mode

[0027] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0028] Next, the concepts involved in the present invention will be described first in conjunction with the accompanying drawings. It should be noted here that the following descriptions of each concept are only for making the content of the present invention easier to understand, and do not represent a limitation on the protection scope of the present invention; at the same time, without conflict, the embodiments in the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.

[0029] As Figures 1 to 8 shown, the present invention provides an embodiment of a deposition system for producing chemical vapor deposition silicon carbide rings, including a furnace body 1 with a reaction chamber inside. The reaction chamber is made of high-temperature resistant insulating materials. A heating module for providing heat energy to the reaction chamber is also provided inside the furnace body 1. The heating module includes, but is not limited to, the method of arranging multiple groups of electric heating wires around the furnace body 1, as long as the required heating temperature can be achieved. A detachable bottom cover 4 is provided at the bottom of the furnace body 1, and the bottom cover 4 is used to seal the bottom of the furnace body 1.

[0030] The nozzle groups 3, and there are multiple nozzle groups 3. The multiple nozzle groups 3 pass through the furnace body 1 and are fixed on the side wall of the furnace body 1. The multiple nozzle groups 3 are all connected with gas pipelines. The gas pipelines transport gas into the reaction chamber through the nozzle groups 3. There are four nozzle groups 3, and the four nozzle groups 3 are arranged at equal intervals along the circumferential direction of the furnace body 1. Each nozzle group 3 includes multiple nozzles, and the multiple nozzles are fixed on the side wall of the furnace body 1 at equal intervals from top to bottom. The four nozzle groups 3 transport the gas containing silicon and carbon in the gas pipeline to the multiple nozzles from four directions, and then spray the gas containing silicon and carbon into the furnace body 1 through the multiple nozzles arranged from top to bottom, so that the gas containing silicon and carbon can be quickly and evenly dispersed into the reaction chamber in the furnace body 1 to ensure the deposition rate and uniformity of silicon carbide on the annular single-crystal substrate 6. An air outlet is arranged at a position near the lower end of the furnace body 1 to discharge the waste gas after the reaction.

[0031] Multiple graphite brackets 5 and multiple annular single-crystal substrates 6. The graphite brackets 5 are installed on the inner bottom of the bottom cover 4. The graphite brackets 5 are used to support the annular single-crystal substrates 6. The graphite brackets 5 are detachable. After the bottom cover 4 is connected to the furnace body 1, both the graphite brackets 5 and the annular single-crystal substrates 6 are located in the reaction chamber.

[0032] The graphite bracket 5 includes a support column 12, an assembly column 13, and a plug-in shaft 14. The support column 12 is fixed on the inner bottom of the bottom cover 4. There are multiple assembly columns 13 and horizontal support rods 17 corresponding to each other one by one. A clamping protrusion 15 is arranged at the top of the support column 12 and the assembly column 13. A clamping groove 16 is opened at the bottom of the assembly column 13. The clamping protrusion 15 can be engaged with the clamping groove 16. The multiple assembly columns 13 are stacked on the top of the support column 12 in sequence. The plug-in shaft 14 is inserted into the center of the assembly column 13 to connect the support column 12 and the multiple assembly columns 13. Three horizontally arranged support rods 17 are fixed on the circumferential surface of each assembly column 13 at equal intervals. A vertical upward clamping pin 18 is fixed at the end of each horizontal support rod 17. The annular single-crystal substrate 6 is placed on the top of the clamping pin 18.

[0033] When different numbers of annular single-crystal substrates 6 need to be placed into the furnace body 1, the corresponding number of assembly columns 13 can be selected according to the number of annular single-crystal substrates 6. That is, three horizontal support rods 17 are installed on each assembly column 13, and the clamping pins 18 are fixed at the ends of the horizontal support rods 17 to form a set of support structures to support a single annular single-crystal substrate 6. The multiple sets of support structures are directly fixedly connected to each other through the plug-in shaft 14, the clamping groove 16, and the clamping protrusion 15. By repeatedly using the above combination, the height of the graphite bracket 5 can be adjusted according to the number of annular single-crystal substrates 6. Compared with the method of using an integral graphite bracket 5, in this embodiment, by adjusting the number of assembly columns 13, it is possible to avoid the graphite bracket 5 occupying too much space in the reaction chamber, thereby reducing the influence of the graphite bracket 5 on the gas flow.

[0034] Stabilizing mechanism, the stabilizing mechanism includes a lifting seat 7, a support arm 8 and a clamping assembly 9. The support arm 8 is fixed on the lifting seat 7, and the clamping assembly 9 is installed on the support arm 8. When assembling the graphite bracket 5, since the assembling columns 13 and the annular single-crystal substrate 6 are stacked layer by layer from bottom to top by a manipulator, when the stacking height of the assembling columns 13 increases, it is necessary to stably support the upper assembling columns 13 to prevent the annular single-crystal substrate 6 from shaking during the stacking process. At this time, by driving the clamping assembly 9 to move up and down through the lifting seat 7, different parts of the graphite bracket 5 can be supported.

[0035] The clamping assembly 9 includes an inner gear ring 19, an outer gear ring 20, a gear ring bracket 21, a gear set 22, a plurality of fixed shafts 23 and a plurality of chucks 24. The inner circle of the inner gear ring 19 and the outer circle of the outer gear ring 20 are respectively engaged with the gear set 22. The gear set 22 can drive the inner gear ring 19 and the outer gear ring 20 to rotate in opposite directions. The bottoms of the inner gear ring 19 and the outer gear ring 20 are rotatably installed on the top of the gear ring bracket 21. A plurality of chucks 24 are rotatably installed on the fixed shafts 23. The fixed shafts 23 are fixed to the bottom of the gear ring bracket 21 through connecting blocks 25. The front ends of the plurality of chucks 24 all face the graphite bracket 5. The inner gear ring 19 and the outer gear ring 20 are used to drive the chucks 24 to clamp or loosen the graphite bracket 5.

[0036] The chuck 24 further includes a first jaw 26 and a second jaw 27. The middle sections of the first jaw 26 and the second jaw 27 are cross-set and the cross-section is rotatably connected to the fixed shaft 23. Waist-shaped holes are provided at the tails of the first jaw 26 and the second jaw 27. A first sliding column 28 is arranged in the waist-shaped hole at the tail of the first jaw 26. The bottom of the first sliding column 28 is fixedly connected to the upper surface of the outer gear ring 20 through a connecting piece. A second sliding column 29 is arranged in the waist-shaped hole at the tail of the second jaw 27. The bottom of the second sliding column 29 is fixedly connected to the upper surface of the inner gear ring 19.

[0037] The gear set 22 includes a gear seat 30, a driving gear 31 and two driven gears 32. The driving gear 31 and the two driven gears 32 are arranged side by side and rotatably installed on the gear seat 30. The gear seat 30 is fixed to the bottom of the gear ring bracket 21. The two driven gears 32 are located on both sides of the driving gear 31 so as to drive the two driven gears 32 to rotate in opposite directions through the driving gear 31. The two driven gears 32 are respectively engaged with the inner side of the inner gear ring 19 and the outer side of the outer gear ring 20. The driving wheel is driven to rotate by a servo motor.

[0038] The working principle of the stabilizing mechanism is as follows: When the manipulator stacks the assembling columns 13 and the annular single-crystal substrate 6 layer by layer, in order to prevent the assembling column 13 from causing the placement position of the annular single-crystal substrate 6 to shift due to slight vibration, the gear set 22 drives the inner gear ring 19 and the outer gear ring 20 to rotate in opposite directions. When the inner gear ring 19 and the outer gear ring 20 rotate in opposite directions, they drive the first sliding column 28 and the second sliding column 29 to move away from each other, causing the front ends of the first clamping jaw 26 and the second clamping jaw 27 to open. This is similar to the principle of scissors opening. Furthermore, through the rotation of the inner gear ring 19 and the outer gear ring 20, the simultaneous opening and clamping actions of multiple chucks 24 are achieved, so as to synchronously clamp multiple graphite brackets 5. And the inner gear ring 19 and the outer gear ring 20 are also located outside the graphite bracket 5, and can protect the surroundings of both during the assembly of the graphite bracket 5 and the placement of the annular single-crystal substrate 6. In addition, the lifting seat 7 can be adjusted according to the stacking height of the annular single-crystal substrate 6, so as to support the upper end of the graphite bracket 5, making the graphite bracket 5 more stable during assembly and the process of stacking the annular single-crystal substrate 6. When the placement of the annular single-crystal substrate 6 is completed, the inner gear ring 19 and the outer gear ring 20 can be disengaged from above the graphite bracket 5, and then the bottom cover 4 and the graphite bracket 5 with the annular single-crystal substrate 6 placed thereon are moved away from below the inner gear ring 19 through the conveying mechanism 10.

[0039] The conveying mechanism 10 and the lifting mechanism 11. The conveying mechanism 10 is used to transport the bottom cover 4 to the lower part of the furnace body 1, and the lifting mechanism 11 is used to lift the bottom cover 4 to be engaged with the bottom of the furnace body 1.

[0040] The conveying mechanism 10 includes a track 33, a platform truck 34 and a fixing frame 35. The bottom cover 4 is installed on the platform truck 34 through the fixing frame 35. The track 33 is laid under the platform truck 34 and extends to the bottom of the lifting mechanism 11.

[0041] The lifting mechanism 11 includes a support frame 36, a bottom bracket 37, a bearing bracket 38, a guide rail 39 and a lead screw 40. The furnace body 1 is fixed on the top of the support frame 36. An ascending channel is formed in the center of the support frame 36. The bottom bracket 37 is fixed on both sides of the track 33 and is higher than the track 33. The upper end of the guide rail 39 is fixedly connected to the top of the support frame 36, and the lower end of the guide rail 39 is fixedly connected to the bottom bracket 37. The bearing bracket 38 is slidably installed on the guide rail 39. The lead screw 40 is threadedly connected to the bearing bracket 38. The rotation of the lead screw 40 can drive the bearing bracket 38 to rise or fall along the guide rail 39. A clamping block 41 is fixed on the side of the platform truck 34, and a limiting groove 42 is formed on the bearing bracket 38. When the platform truck 34 moves along the track 33 to the position of the bearing bracket 38, the clamping block 41 is located above the bearing bracket 38. When the bearing bracket 38 moves upward, the clamping block 41 can enter the limiting groove 42 and be engaged with the limiting groove 42.

[0042] The upper end of the lead screw 40 is connected to the output shaft of the motor through the worm and worm gear reducer 2, and the worm and worm gear reducer 2 is fixed on the support frame 36.

[0043] When the platform truck 34 moves to the lifting mechanism 11, the latch 41 on the side of the platform truck 34 is located directly above the bearing bracket 38. At this time, the motor drives the lead screw 40 to move through the worm and worm gear reducer 2, causing the bearing bracket 38 to rise, so that the latch 41 enters the limit groove 42 and engages with the limit groove 42 to prevent the platform truck 34 from shaking during the rising process. Then, the bearing bracket 38 continues to drive the platform truck 34, the bottom cover 4 and the graphite bracket 5 with the annular single crystal substrate 6 placed thereon to move upward together until the bottom cover 4 is engaged with the bottom of the furnace body 1. At this time, the annular single crystal substrate 6 and the graphite bracket 5 are sent into the reaction chamber in the furnace body 1. Finally, the bottom cover 4 and the furnace body 1 are locked by a clamp. During the locking process, the bearing bracket 38 always presses the bottom cover 4 against the furnace body 1. And because the worm and worm gear reducer 2 has a self-locking function, it can effectively prevent the bottom cover 4 from falling during the locking process. On the other hand, by pressing the bottom cover 4 against the furnace body 1 with the bearing bracket 38, compared with manually lifting and pressing the bottom cover 4, the mechanical pressing method can also make the two fit more closely.

[0044] In this article, specific examples are used to elaborate on the principle and implementation manner of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. The above is only the preferred implementation manner of the present invention. It should be noted that due to the limited nature of written expression and objectively existing infinite specific structures, for those of ordinary skill in the art in this technical field, without departing from the principle of the present invention, several improvements, refinements or changes can be made, or the above technical features can be combined in an appropriate manner; these improvements, refinements, changes or combinations, or directly applying the concept and technical solution of the invention to other occasions without improvement, should all be regarded as the protection scope of the present invention.

Claims

1. A deposition system for producing chemical vapor deposition silicon carbide rings, characterized in that: include: A furnace body (1), wherein the furnace body (1) has a reaction chamber, and wherein a heating module for providing heat energy to the reaction chamber is also arranged in the furnace body (1); a nozzle group (3), wherein a plurality of the nozzle groups (3) are provided, the plurality of nozzle groups (3) pass through the furnace body (1) and are fixed on the side wall of the furnace body (1), the plurality of nozzle groups (3) are all connected to a gas pipeline, and the gas pipeline transports gas into the reaction chamber through the nozzle group (3); A bottom cover (4), the bottom cover (4) being used to seal the bottom of the furnace body (1); a plurality of graphite supports (5) and a plurality of annular single crystal substrates (6), wherein the plurality of graphite supports (5) are mounted on the inner bottom of the bottom cover (4), the graphite supports (5) are used to support the annular single crystal substrates (6), and the graphite supports (5) are detachable; when the bottom cover (4) is connected to the furnace body (1), the graphite supports (5) and the annular single crystal substrates (6) are both located in the reaction chamber; A stabilizing mechanism, the stabilizing mechanism comprising a lifting seat (7), a support arm (8) and a clamping assembly (9), the support arm (8) being fixed on the lifting seat (7), the clamping assembly (9) being mounted on the support arm (8), and when the graphite support (5) is assembled, the lifting seat (7) drives the clamping assembly (9) to move up and down so as to support different parts of the graphite support (5); the clamping assembly (9) comprises an inner gear ring (19), an outer gear ring (20), a gear ring support (21), a gear set (22), a plurality of fixed shafts (23) and a plurality of clamps (24), the inner gear ring (19) and the outer gear ring (20) being used to drive the clamps (24) to clamp or release the graphite support (5); A conveying mechanism (10) and a lifting mechanism (11), wherein the conveying mechanism (10) is used to transport the bottom cover (4) to the bottom of the furnace body (1), and the lifting mechanism (11) is used to lift the bottom cover (4) to engage with the bottom of the furnace body (1).

2. The deposition system for producing a chemical vapor deposition silicon carbide ring according to claim 1, characterized in that: Four nozzle groups (3) are provided, and the four nozzle groups (3) are arranged at equal intervals along the circumferential direction of the furnace body (1), and each nozzle group (3) comprises a plurality of nozzles, and the plurality of nozzles are fixed on the side wall of the furnace body (1) at equal intervals from top to bottom.

3. The deposition system for producing a chemical vapor deposition silicon carbide ring according to claim 1, characterized in that: The graphite support (5) comprises a support column (12), an assembly column (13) and a plug-in shaft (14); the support column (12) is fixed to the inner bottom of the bottom cover (4); the tops of the support column (12) and the assembly column (13) are provided with a clamping protrusion (15); the bottom of the assembly column (13) is provided with a clamping groove (16); the clamping protrusion (15) can be engaged with the clamping groove (16); a plurality of the assembly columns (13) are stacked in sequence on the top of the support column (12); the plug-in shaft (14) is plugged into the center of the assembly column (13) for connecting the support column (12) and a plurality of the assembly columns (13); three horizontal support rods (17) arranged at equal intervals are fixed on the circumferential surface of each of the assembly columns (13); a clamping pin (18) pointing vertically upward is fixed at the end of each of the horizontal support rods (17); the annular single crystal substrate (6) is placed on the top of the clamping pin (18).

4. The deposition system for producing a chemical vapor deposition silicon carbide ring according to claim 1, characterized in that: The inner ring of the inner gear ring (19) and the outer ring of the outer gear ring (20) are respectively meshed with the gear set (22), and the gear set (22) can drive the inner gear ring (19) and the outer gear ring (20) to rotate in opposite directions. The bottoms of the inner gear ring (19) and the outer gear ring (20) are both rotatably mounted on the top of the gear ring bracket (21), and a plurality of chucks (24) are rotatably mounted on the fixed shaft (23). The fixed shaft (23) is fixed to the bottom of the gear ring bracket (21) via a connecting block (25), and the front ends of the plurality of chucks (24) are all facing the graphite bracket (5).

5. The deposition system for producing a chemical vapor deposition silicon carbide ring according to claim 4, characterized in that: The chuck (24) further comprises a first clamping jaw (26) and a second clamping jaw (27), wherein the middle sections of the first clamping jaw (26) and the second clamping jaw (27) are cross-arranged and the intersection is rotatably connected to the fixed shaft (23), the tail end of the first clamping jaw (26) and the tail end of the second clamping jaw (27) are both provided with waist-shaped holes, a first slide column (28) is arranged in the waist-shaped hole at the tail end of the first clamping jaw (26), the bottom of the first slide column (28) is fixedly connected to the upper surface of the outer gear ring (20) through a connecting sheet, and a second slide column (29) is arranged in the waist-shaped hole at the tail end of the second clamping jaw (27), the bottom of the second slide column (29) is fixedly connected to the upper surface of the inner gear ring (19).

6. The deposition system for producing a chemical vapor deposition silicon carbide ring according to claim 4, characterized in that: The gear set (22) comprises a gear seat (30), a driving gear (31) and two driven gears (32); the driving gear (31) and the two driven gears (32) are rotatably mounted side by side on the gear seat (30); the gear seat (30) is fixed to the bottom of the gear ring support (21); the two driven gears (32) are located on both sides of the driving gear (31) so that the driving gear (31) can drive the two driven gears (32) to rotate in opposite directions; the two driven gears (32) are respectively meshed with the inner side of the inner gear ring (19) and the outer side of the outer gear ring (20); the driving gear is driven to rotate by a servo motor.

7. The deposition system for producing a chemical vapor deposition silicon carbide ring according to claim 1, characterized in that: The conveying mechanism (10) comprises a track (33), a platform vehicle (34) and a fixing frame (35); the bottom cover (4) is mounted on the platform vehicle (34) via the fixing frame (35); the track (33) is laid below the platform vehicle (34) and extends to the bottom of the lifting mechanism (11).

8. The deposition system for producing a chemical vapor deposition silicon carbide ring according to claim 7, characterized in that: The lifting mechanism (11) comprises a supporting frame (36), a bottom bracket (37), a supporting bracket (38), a guide rail (39) and a screw rod (40); the furnace body (1) is fixed to the top of the supporting frame (36); a rising channel is formed in the center of the supporting frame (36); the bottom bracket (37) is fixed to both sides of the track (33) and is higher than the track (33); the upper end of the guide rail (39) is fixedly connected to the top of the supporting frame (36); the lower end of the guide rail (39) is fixedly connected to the bottom bracket (37); and the supporting bracket (38) is slidably mounted on the guide rail (39). The screw rod (40) is threadedly connected to the support frame (38), and the rotation of the screw rod (40) can drive the support frame (38) to rise or fall along the guide rail (39). A clamping block (41) is fixed on the side of the platform vehicle (34), and a limiting groove (42) is provided on the support frame (38). When the platform vehicle (34) moves along the track (33) to the position of the support frame (38), the clamping block (41) is located above the support frame (38), and when the support frame (38) moves upward, the clamping block (41) can enter the limiting groove (42) and engage with the limiting groove (42).

9. The deposition system for producing a chemical vapor deposition silicon carbide ring according to claim 8, characterized in that: The upper end of the screw rod (40) is connected to the output shaft of the motor via a worm gear reducer (2), and the worm gear reducer (2) is fixed on the support frame (36).

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