Vapor growth equipment with fixed base

Abstract

The present invention discloses a vapor phase growth device with a fixed base, comprising a process chamber, a rotating sealing mechanism, a fixed base arranged in the process chamber, a first heating device and a uniform heating device; the fixed base is used to carry a substrate; the first heating device is arranged between the fixed base and the bottom wall of the process chamber to provide heat to the fixed base; the uniform heating device is located between the fixed base and the first heating device; the rotating sealing mechanism is dynamically sealed and arranged on the bottom wall of the process chamber, passes through the first heating device and is connected to the uniform heating device, and is used to drive the uniform heating device to rotate relative to the fixed base, so that the uniformity of the temperature field between the fixed base and the first heating device can be improved, which is beneficial to the temperature uniformity of the substrate surface.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor processing equipment, and in particular to a vapor phase growth equipment provided with a fixed base. Background Art

[0002] In the semiconductor manufacturing process, vapor deposition technology, such as MOCVD, is used to deposit functional thin films on the wafer surface.

[0003] In the semiconductor manufacturing process, for a process chamber with a fixed base, a heating device is set under the fixed base, and the fixed base is heated by the heating device, and the fixed base transfers heat to the wafer to heat the wafer. In this process, affected by factors such as the temperature field and the gas flow field, the temperature of the wafer surface is non-uniform during the process, which can seriously affect the quality of the film formed on the wafer surface.

[0004] Therefore, it is necessary to provide a new type of vapor phase growth equipment with a fixed base to solve the above problems existing in the prior art. Summary of the invention

[0005] The object of the present invention is to provide a vapor phase growth device provided with a fixed base, which is beneficial to improving the temperature uniformity of the surface of a substrate, such as a wafer.

[0006] To achieve the above object, the technical solution of the present invention is as follows:

[0007] A vapor phase growth device provided with a fixed base comprises a process chamber, a rotary sealing mechanism, a fixed base arranged in the process chamber, a first heating device and a uniform heating device;

[0008] The fixed base is used to carry the substrate;

[0009] The first heating device is disposed between the fixed base and the bottom wall of the process chamber to provide heat to the fixed base;

[0010] The heat uniforming device is located between the fixed base and the first heating device;

[0011] The rotary sealing mechanism is dynamically sealed on the bottom wall of the process chamber, passes through the first heating device and is connected to the uniform heating device, so as to drive the uniform heating device to rotate relative to the fixed base.

[0012] By adopting the above technical scheme, the first heating device is arranged between the fixed base and the bottom wall of the process chamber to provide heat to the fixed base, the uniform heating device is located between the fixed base and the first heating device, and the rotating sealing mechanism is dynamically sealed and arranged on the bottom wall of the process chamber. After passing through the first heating device, it is connected with the uniform heating device and is used to drive the uniform heating device to rotate relative to the fixed base. The uniform heating device rotates relative to the fixed base, so that the uniformity of the temperature field between the fixed base and the first heating device is improved, which is beneficial to the temperature uniformity of the substrate surface.

[0013] Optionally, the heat uniforming device includes a heat conducting element and / or a heat generating element, wherein the heat conducting element is used to conduct heat and the heat generating element is used to generate heat.

[0014] Optionally, the heat conducting member is connected to the rotating sealing mechanism to absorb and transfer heat to the fixed base.

[0015] Optionally, the radial dimension of the heat uniformizing device does not exceed the radial dimension of the bearing surface of the fixed base, and the radial dimension of the heat uniformizing device is not less than 95% of the radial dimension of the bearing surface of the fixed base.

[0016] Optionally, another heat equalizing device is provided between the fixed base and the top wall of the process chamber, and the top wall of the process chamber is also dynamically sealed with another rotating sealing mechanism connected to the other heat equalizing device, and the radial dimension of the other heat equalizing device is not less than 95% of the radial dimension of the bearing surface of the fixed base.

[0017] Optionally, a second heating device is provided between the other heat-uniformizing device and the top wall of the process chamber to provide heat.

[0018] Optionally, the rotary sealing mechanism comprises:

[0019] A heat-uniform rotating shaft is located in the process chamber, and the heat-uniform device is connected to the heat-uniform rotating shaft;

[0020] A rotating shaft body and a dynamic seal are arranged in the process chamber and connected with the heat-distributing rotating shaft to drive the heat-distributing rotating shaft to rotate;

[0021] The rotation driving device is arranged outside the process chamber and connected to the rotating shaft to provide a rotation driving force.

[0022] Optionally, the heat uniformizing shaft is a telescopic shaft to adjust the relative position between the heat uniformizing device and the fixed base.

[0023] Optionally, it also includes a power supply stator, and the rotary sealing mechanism is also provided with a rotor and an electrical conduction device. The heat uniformity device includes a heating element. The electrical conduction device is arranged in the rotary sealing mechanism, and the two ends are electrically connected to the rotor and the heating element respectively. The power supply stator is sleeved on the rotor and is stationary relative to the process chamber, so as to provide electrical energy for heating the heating element through the rotational friction between the rotor and the power supply stator.

[0024] Optionally, the power supply stator, the rotor and the electrical conduction device form a conductive slip ring.

[0025] Optionally, the rotary sealing mechanism includes a heat-distributing rotating shaft, a rotating shaft body and a rotary driving device;

[0026] The heat-uniform rotating shaft is located in the process chamber and is connected to the heat-uniform device;

[0027] The rotating shaft dynamic seal is disposed in the process chamber, connected to the heat-distributing rotating shaft and extending outside the process chamber, so as to drive the heat-distributing rotating shaft to rotate under rotational drive;

[0028] The rotor is located outside the process chamber and is sleeved on the rotating shaft;

[0029] The electrical conduction device is electrically connected to the heating element, extends within the heat distribution shaft and the rotating shaft, and is electrically connected to the rotor;

[0030] The rotation driving device is arranged outside the process chamber and connected to the rotating shaft to provide a rotation driving force.

[0031] Optionally, the fixed base includes a substrate carrier and an edge support structure, wherein the edge support structure is disposed around the bottom of the substrate carrier and extends toward the bottom wall of the process chamber;

[0032] The first heating device and the uniform heating device are located in a space surrounded by the substrate carrier, the edge support structure and the process chamber.

[0033] Optionally, the fixed base includes a substrate carrier and a middle support structure, the uniform heat device is arranged around the middle support structure, the middle support structure is connected to the middle of the substrate carrier, extends toward the bottom wall of the process chamber, and penetrates and is fixed to the rotating sealing mechanism so as to remain stationary relative to the process chamber when the rotating sealing mechanism drives the uniform heat device to rotate.

[0034] Optionally, the rotary sealing mechanism includes a heat-distributing rotating shaft, a rotating shaft body, a fixed bottom plate and a rotary driving device;

[0035] The heat-uniform rotating shaft is located in the process chamber and is connected to the heat-uniform device;

[0036] The rotating shaft dynamic seal is disposed in the process chamber, connected to the heat-distributing rotating shaft and extending outside the process chamber, so as to drive the heat-distributing rotating shaft to rotate under rotational drive;

[0037] The fixed bottom plate is dynamically sealed to the bottom of the rotating shaft, and the middle support structure is fixed to the fixed bottom plate after penetrating the heat-distributing rotating shaft and the rotating shaft from the top of the heat-distributing rotating shaft, so that the fixed bottom plate and the middle support structure are stationary relative to the process chamber during the rotation of the rotating shaft;

[0038] The rotation driving device is arranged on the side wall of the rotating shaft body to rotate the rotating shaft body.

[0039] Optionally, a gas injection device is further included, wherein the gas injection device is arranged on the top wall or the side wall of the process chamber to provide process gas to the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 is a schematic structural diagram of a first vapor phase growth device according to an embodiment of the present invention;

[0041] Figure 2 is a schematic structural diagram of a second vapor phase growth device according to an embodiment of the present invention;

[0042] Figure 3 is a schematic structural diagram of a third vapor phase growth device according to an embodiment of the present invention;

[0043] Figure 4 A schematic diagram of an assembly structure between a heat-uniform device, a rotary sealing mechanism and a process chamber bottom plate according to an embodiment of the present invention;

[0044] Figure 5 It is a schematic diagram of another assembly structure between the heat-uniform device, the rotary sealing mechanism and the process chamber bottom plate according to an embodiment of the present invention;

[0045] Figure 6 is a schematic structural diagram of a fourth vapor phase growth device according to an embodiment of the present invention;

[0046] Figure 7 A schematic diagram of an assembly structure between a fixed base, a heat-uniform device, a rotary sealing mechanism and a process chamber bottom plate according to an embodiment of the present invention;

[0047] Figure 8 It is a schematic diagram of another assembly structure between the fixed base, the uniform heat device, the rotary sealing mechanism and the process chamber bottom plate according to an embodiment of the present invention;

[0048] Reference numerals:

[0049] 100, process chamber; 110, fixed base; 111, substrate carrier; 112, edge support structure; 113, middle support structure; 120, first heating device; 130, uniform heat device; 131, heat conductor; 132, main support body; 133, heating element; 140, second heating device; 200, rotary sealing mechanism; 210, uniform heat shaft; 220, rotating shaft; 221, driving shaft; 222, sealing sleeve; 230, rotary drive device; 241, rotor; 242, electrical conduction device; 400, fixed bottom plate. DETAILED DESCRIPTION

[0050] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the present invention belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0051] The specific implementation modes of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0052] refer to Figure 1 An embodiment of the present invention provides a vapor phase growth device for processing a substrate, wherein the vapor phase growth device includes a process chamber 100, a rotary sealing mechanism 200, a fixed base 110 disposed in the process chamber 100, a first heating device 120, and a uniform heating device 130. In some embodiments, the fixed base 110, the first heating device 120, and the uniform heating device 130 are all disposed inside the process chamber 100, and the rotary sealing mechanism 200 is disposed outside the process chamber 100, and the uniform heating device 130 in the process chamber 100 is driven to rotate from the outside.

[0053] The supporting surface of the fixed base 110 is used to support the substrate.

[0054] In some embodiments, the radial dimension of the uniform heating device 130 between the first heating device 120 and the fixed base 110 does not exceed the radial dimension of the bearing surface of the fixed base 110 to avoid adverse effects on the process gas flow field. In some embodiments, the radial dimension of the uniform heating device 130 between the first heating device 120 and the fixed base 110 is not less than 95% of the radial dimension of the bearing surface of the fixed base 110 to ensure the temperature uniformity of each substrate supported on the fixed base 110.

[0055] In some embodiments, the fixed base 110 is stationary relative to the process chamber 100 and is used to carry the substrate. Specifically, the fixed base 110 is fixedly disposed inside the process chamber 100 and is used to carry the substrate. The fixed base 110 is provided with a plurality of recesses for placing the substrate. In some more specific embodiments, the plurality of recesses are evenly distributed on the fixed base 110.

[0056] In some embodiments, the first heating device 120 is disposed between the fixed base 110 and the bottom wall of the process chamber 100 to provide heat. In some specific embodiments, there is a gap between the first heating device 120 and the fixed base 110. The first heating device 120 can use a resistance heater to heat the interior of the process chamber 100. After the fixed base 110 is heated, it transfers heat to the substrate so that the temperature of the substrate meets the process temperature requirement.

[0057] There is a gap between the first heating device 120 and the fixed base 110. The first heating device 120 generates heat and transfers heat to the fixed base 110. There is a temperature gradient between the first heating device 120 and the fixed base 110. Under the influence of the atmosphere in the process chamber 100, such as the process gas flow field, it is difficult to ensure the uniformity of temperature at various locations on the base. The uniform heating device 130 is disposed inside the process chamber 100 and can rotate inside the process chamber 100, which is beneficial to the temperature uniformity between the first heating device 120 and the fixed base 110, and further beneficial to the temperature uniformity at various locations on the fixed base 110.

[0058] In some embodiments, reference Figure 1 The heat uniforming device 130 is rotatably disposed between the fixed base 110 and the first heating device 120 .

[0059] In some embodiments, reference Figure 2 The heat-uniformizing device 130 is rotatably disposed between the fixed base 110 and the top wall of the process chamber 100 .

[0060] In some embodiments, reference Figure 2 and Figure 3When the uniform heating device 130 is disposed between the fixed base 110 and the top wall of the process chamber 100, a second heating device 140 is further disposed between the uniform heating device 130 and the top wall of the process chamber 100 to provide heat. In some specific embodiments, there is a gap between the second heating device 140 and the uniform heating device 130. The second heating device 140 can use a resistance heater to perform auxiliary heating on the upper side of the substrate, thereby facilitating reducing the temperature difference between the upper and lower surfaces of the substrate to prevent the substrate from warping.

[0061] In some embodiments, when the uniform heat device 130 is disposed between the fixed base 110 and the top wall of the process chamber 100, the radial dimension of the uniform heat device 130 is not less than 95% of the radial dimension of the bearing surface of the fixed base 110. In some embodiments, the radial dimension of the uniform heat device 130 is consistent with the radial dimension of the bearing surface of the fixed base 110. In some embodiments, the radial dimension of the uniform heat device 130 is greater than the radial dimension of the bearing surface of the fixed base 110, and the specific dimension can be flexibly adjusted according to the inner diameter of the process chamber 100 according to the uniform heat demand.

[0062] In some embodiments, the rotary sealing mechanism 200 is dynamically sealed and disposed on the bottom wall of the process chamber 100, passes through the first heating device 120 and is connected to the uniform heating device 130, and is used to drive the uniform heating device 130 to rotate relative to the fixed base 110. Specifically, during the substrate processing, the fixed base 110 remains stationary, and the uniform heating device 130 rotates under the drive of the rotary sealing mechanism 200, which is beneficial to the temperature uniformity of the fixed base 110. Here, the rotary sealing mechanism 200 is dynamically sealed and disposed in the process chamber 100 to ensure the airtightness of the process chamber at this location.

[0063] In some embodiments, when the uniform heating device 130 is arranged between the fixed base 110 and the first heating device 120, the rotating sealing mechanism 200 is dynamically sealed and arranged on the bottom wall of the process chamber 100; another uniform heating device 130 is arranged between the fixed base 110 and the top wall of the process chamber 100, and another rotating sealing mechanism 200 is dynamically sealed and arranged on the top wall of the process chamber 100; a uniform heating device 130 is arranged between the fixed base 110 and the first heating device 120, and between the fixed base 110 and the top wall of the process chamber 100, which is beneficial to the temperature uniformity above the substrate and reduces the temperature difference between the upper and lower surfaces of the substrate to avoid substrate warping.

[0064] In some embodiments, there is a gap between the uniform heat device 130 and the fixed base 110 , and there is a gap between the uniform heat device 130 and the first heating device 120 .

[0065] In some embodiments, the heat uniforming device 130 includes a heat conducting member 131 and / or a heating member 133 , wherein the heat conducting member 131 is used for conducting heat, and the heating member 133 is used for generating heat.

[0066] In some specific embodiments, the heat conducting member 131 is connected to the rotating sealing mechanism 200 to absorb and transfer heat to the fixed base 110. In some more specific embodiments, referring to Figure 4 The heat-uniform device 130 includes a heat-conducting member 131 connected to the rotating sealing mechanism 200 to absorb and transfer heat to the fixed base 110. In some embodiments, the heat-conducting member 131 absorbs the heat radiated by the first heating device 120 and transfers the heat to the fixed base 110.

[0067] The material of the heat-conducting member 131 is heat-resistant and has good thermal conductivity, and the specific heat resistance is selected according to the process temperature requirement.

[0068] In some specific embodiments, the heat conducting member 131 is a graphite heat conducting member. The graphite heat conducting member 131 absorbs the heat of the first heating device 120 and transfers the heat to the fixed base 110, thereby improving the utilization rate of heat energy and reducing heat loss.

[0069] In some more specific embodiments, the surface of the heat conducting member 131 is coated with a heat conducting coating, such as silicon carbide.

[0070] In some embodiments, when the uniform heat device 130 is disposed between the fixed base 110 and the first heating device 120 , the uniform heat shaft 210 is rotatably disposed on the bottom wall of the process chamber 100 , and the rotating shaft 220 is dynamically sealed on the bottom wall of the process chamber 100 .

[0071] In some embodiments, when the heat equalizing device 130 is disposed between the fixed base 110 and the top wall of the process chamber 100 , the heat equalizing shaft 210 is rotatably disposed on the top wall of the process chamber 100 , and the rotating shaft 220 is dynamically sealed on the top wall of the process chamber 100 .

[0072] In some more specific embodiments, the driving shaft 221 and one of the heat-distributing shafts 210 penetrate the process chamber 100 and are connected to each other, so that the rotation of the driving shaft 221 can drive the heat-distributing shaft 210 to rotate, thereby driving the heat-distributing device 130 to rotate.

[0073] In some embodiments, the rotary sealing mechanism 200 includes a heat-distributing rotating shaft 210, which is located in the process chamber 100, and the heat-distributing device 130 is connected to the heat-distributing rotating shaft 210. In some embodiments, one end of the heat-distributing rotating shaft 210 penetrates at least a portion of the top wall or at least a portion of the bottom wall of the process chamber 100 and has a distance from the top wall or the bottom wall of the process chamber 100, so as to be adapted to be connected to the rotating shaft 220 of the rotary sealing mechanism 200 so as to rotate relative to the process chamber 100 under the drive of the rotating shaft 220.

[0074] In some embodiments, the heat evenly distributing shaft 210 is connected to the middle portion of the heat evenly distributing device 130 .

[0075] In some embodiments, the rotary sealing mechanism 200 further includes a rotating shaft 220, which penetrates at least a portion of the bottom wall or the top wall of the process chamber 100 and is dynamically sealed between the bottom wall or the top wall of the process chamber 100. One end of the rotating shaft 220 extends into the process chamber 100 and is connected to the heat-distributing rotating shaft 210.

[0076] The cooperation between the rotary sealing mechanism 200 and the top wall or the bottom wall of the process chamber 100 is necessary to ensure the airtightness of the process chamber 100 and to realize the rotation of the heat conducting member 131 by the heat distribution shaft 210 .

[0077] In some embodiments, the heat uniforming device 130 and the heat uniforming shaft 210 are detachably connected, such as by bolts. The specific detachable connection method is not limited herein, and it is necessary that the heat uniforming shaft 210 can drive the heat uniforming device 130 to rotate synchronously.

[0078] In some embodiments, the heat-uniform device 130 is fixedly connected to the heat-uniform rotating shaft 210 , and the specific fixed connection method is not limited herein, as long as the heat-uniform rotating shaft 210 can drive the heat-uniform device 130 to rotate synchronously.

[0079] In some embodiments, the heat-distributing device 130 and the heat-distributing shaft 210 are an integrated structure.

[0080] In some embodiments, the rotating shaft 220 is dynamically sealed and disposed in the process chamber 100 to ensure the airtightness of the process chamber 100. The rotating shaft 220 is connected to the heat distribution shaft 210 to drive the heat distribution shaft 210 to rotate. The rotating shaft 220 extends outside the process chamber 100.

[0081] In some specific embodiments, the rotating shaft body 220 includes a driving shaft 221 and a sealing sleeve 222 located outside the process chamber 100, wherein the sealing sleeve 222 is sleeved on the outside of the driving shaft 221, and the sealing sleeve 222 is disposed in the process chamber 100, so that the driving shaft 221 is dynamically sealed in the process chamber 100, so that the rotating shaft body 220 is dynamically sealed in the process chamber 100 and ensures the airtightness of the process chamber 100. In some more specific embodiments, the sealing sleeve 222 is a magnetic fluid sealing component.

[0082] In some embodiments, the rotary sealing mechanism 200 further includes a rotary driving device 230, which is disposed outside the process chamber 100 and connected to the rotating shaft 220 to provide a rotary driving force. In some embodiments, the rotary driving device 230 is a rotary motor.

[0083] In some specific embodiments, the rotation driving device 230 is directly connected to the rotating shaft 220 , for example, the rotating shaft of the motor is key-connected to the driving rotating shaft 221 .

[0084] In some specific embodiments, the rotation driving device 230 is indirectly connected to the rotating shaft 220 , for example, pulleys are fixedly provided on the motor shaft and the driving shaft 221 , and the two pulleys are connected by pulley transmission.

[0085] In some embodiments, reference Figure 5 and Figure 6 The heat-uniform device 130 includes a main support body 132 connected to the rotary sealing mechanism 200; the heat-uniform device 130 also includes a heating element 133, which is disposed on the main support body 132 and is used to generate heat. In some embodiments, the heating element 133 converts externally provided electrical energy into thermal energy to generate heat. In some more specific embodiments, the rotary sealing mechanism 200 is further provided with a rotor 241 and an electrical conduction device 242 to provide electrical energy for the heating element 133.

[0086] In some embodiments, the rotor 241 is disposed outside the process chamber 100. When the uniform heating device 130 includes a main support body 132 and a heating element 133, the rotary sealing mechanism 200 is also provided with a rotor 241 and an electrical conduction device 242. The electrical conduction device 242 is disposed in the rotary sealing mechanism 200, and its two ends are electrically connected to the rotor 241 and the heating element 133 respectively to provide electrical energy for the heating element 133 to generate heat.

[0087] In some embodiments, the heating element 133 is a resistance heating wire, and the main support body 132 is a substrate supporting the resistance heating wire, and the substrate can be an insulating substrate, such as a boron nitride ceramic substrate, or a conductive substrate, such as a molybdenum silicide substrate. When the substrate is a heat-resistant conductive substrate, the resistance heating wire and the substrate are electrically insulated.

[0088] In some embodiments, the heating element 133 is a graphite plate, which generates heat by converting electrical energy into thermal energy.

[0089] In some embodiments, the other end of the heat uniforming shaft 210 is fixedly connected to the main support body 132. Specifically, when the heat uniforming device 130 is disposed between the fixed base 110 and the first heating device 120, one end of the heat uniforming shaft 210 extends toward the bottom wall of the process chamber 100, and the other end is fixedly connected to the main support body 132; when the heat uniforming device 130 is disposed between the fixed base 110 and the top wall of the process chamber 100, one end of the heat uniforming shaft 210 extends toward the top wall of the process chamber 100, and the other end is fixedly connected to the main support body 132.

[0090] In some embodiments, the other end of the heat-distributing shaft 210 is fixedly connected to the heating element 133. Specifically, the other end of the heat-distributing shaft 210 is fixedly connected to the middle of the heating element 133.

[0091] In some specific embodiments, the electrical conduction device 242 is selected to be a wire line, or other devices capable of transmitting electrical energy.

[0092] In some embodiments, the power supply stator, the rotor 241 and the power conducting device 242 form a conductive slip ring.

[0093] In some embodiments, the vapor phase growth apparatus further comprises a powered stator, and the rotary sealing mechanism is further provided with a rotor and an electrical conduction device.

[0094] In some specific embodiments, the rotor 241 includes a conductive ring and a brush wire, wherein the conductive ring fixing sleeve is arranged on the driving shaft 221 and can rotate synchronously with the driving shaft 221, the electrical conduction device 242 is electrically connected to the conductive ring, and the power supply stator sleeve is arranged on the rotor and is stationary relative to the process chamber, so as to provide electrical energy for generating heat to the heating element 133 through the rotational friction between the rotor 241 and the power supply stator.

[0095] In some embodiments, the rotation driving device 230 is connected to the driving shaft 221 for rotation driving.

[0096] In some embodiments, reference Figure 7 The fixed base 110 includes a substrate carrier 111 and an edge support structure 112, the edge support structure 112 is surrounded by the bottom of the substrate carrier 111 and extends toward the bottom wall of the process chamber 100; the first heating device 120 and the uniform heating device 130 are located in the space surrounded by the substrate carrier 111, the edge support structure 112 and the process chamber 100, which is beneficial to protect the first heating device 120 and the uniform heating device 130 from erosion by process gases, especially corrosive process gases.

[0097] In some embodiments, the edge support structure 112 is cylindrical, one end of the edge support structure 112 is connected to the substrate carrier 111, and the other end is connected to the bottom wall of the process chamber 100. In some specific embodiments, the top end of the edge support structure 112 is connected to the edge of the substrate carrier 111, so that the substrate carrier 111, the edge support structure 112 and the bottom wall of the process chamber 100 enclose a space.

[0098] In some embodiments, reference Figure 8The fixed base 110 includes a substrate carrier 111 and a middle support structure 113. The uniform heat device 130 is arranged around the middle support structure 113. The middle support structure 113 is connected to the middle of the substrate carrier 111, extends toward the bottom wall of the process chamber 100, and penetrates and is fixed to the rotating sealing mechanism 200, so as to be stationary relative to the process chamber 100 when the rotating sealing mechanism 200 drives the uniform heat device 130 to rotate.

[0099] In some embodiments, the rotating sealing mechanism 200 also includes a fixed bottom plate 400, which is dynamically sealed to the bottom of the rotating shaft 220. The middle support structure 113 passes through the heat uniform shaft 210 and the rotating shaft 220 from the top of the heat uniform shaft 210, and is fixed to the fixed bottom plate 400, so that the fixed bottom plate 400 and the middle support structure 113 remain stationary relative to the process chamber 100 during the rotation of the rotating shaft 220.

[0100] In some embodiments, the middle support structure 113 is coaxially disposed with the substrate carrier 111 and is disposed in the middle of the substrate carrier 111 .

[0101] In some embodiments, the middle support structure 113 and the substrate carrier 111 may be fixed or detachably arranged. There is no limitation on the arrangement method here. It is necessary that the middle support structure 113 can support the substrate carrier 111.

[0102] In some embodiments, the heat-distributing shaft 210 and the driving shaft 221 are both hollow, and the middle support structure 113 sequentially passes through the heat-distributing shaft 210 and the driving shaft 221. In some embodiments, the heat-distributing shaft 210, the driving shaft 221 and the middle support structure 113 are coaxially arranged.

[0103] In some embodiments, there is a gap between the inner wall of the heat-distributing shaft 210 and the outer wall of the middle support structure 113, so that the heat-distributing shaft 210 will not interfere with the middle support structure 113 during rotation. During the rotation of the heat-distributing device 130, the middle support structure 113 remains stationary, so that the substrate carrier 111 remains stationary.

[0104] In some embodiments, there is a gap between the inner wall of the driving shaft 221 and the outer wall of the middle support structure 113, so that the driving shaft 221 does not interfere with the middle support structure 113 during rotation. During the rotation of the driving shaft 221, the middle support structure 113 remains stationary, so that the substrate carrier 111 remains stationary.

[0105] In some embodiments, the heat-distributing shaft 210 is a telescopic shaft to adjust the relative position between the heat-distributing device 130 and the fixed base 110 .

[0106] The vapor phase growth apparatus further includes a gas injection device. In some embodiments, the uniform heat device 130 is disposed between the fixed pedestal 110 and the first heating device 120, and the gas injection device is disposed on the top wall or side wall of the process chamber 100 to provide process gas to the substrate. In some embodiments, when the uniform heat device 130 is disposed between the fixed pedestal 110 and the top wall of the process chamber 100, and between the fixed pedestal 110 and the first heating device 120, the gas injection device is disposed on the side wall of the process chamber 100 to provide gas.

[0107] In some specific embodiments, the gas injection device is disposed on the top wall of the process chamber 100, the position of the substrate is opposite to the gas injection device along the axial direction of the process chamber 100, and the process gas ejected by the gas injection device flows toward the substrate carrier 111 where the substrate is located. In some specific embodiments, the gas injection device is disposed on the side wall of the process chamber 100, the position of the substrate is opposite to the top wall of the process chamber 100 along the axial direction of the process chamber 100, and the process gas ejected by the gas injection device flows through the substrate in a laminar flow manner from the side of the position of the substrate after being ejected.

[0108] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. A vapor phase growth device provided with a fixed base, characterized in that: It comprises a process chamber (100), a rotary sealing mechanism (200), a fixed base (110) arranged in the process chamber (100), a first heating device (120) and a uniform heating device (130); The fixed base (110) is used to carry the substrate; The first heating device (120) is disposed between the fixed base (110) and the bottom wall of the process chamber (100) to provide heat to the fixed base (110); The heat-uniformizing device (130) is located between the fixed base (110) and the first heating device (120); The rotary sealing mechanism (200) is dynamically sealed on the bottom wall of the process chamber (100), passes through the first heating device (120) and is connected to the uniform heating device (130), and is used to drive the uniform heating device (130) to rotate relative to the fixed base (110).

2. The vapor growth apparatus according to claim 1, characterized in that: The heat uniforming device (130) comprises a heat conducting element (131) and / or a heating element (133); the heat conducting element (131) is used for conducting heat, and the heating element (133) is used for generating heat.

3. The vapor phase growth apparatus according to claim 2, characterized in that: The heat conducting member (131) is connected to the rotary sealing mechanism (200) to absorb and transfer heat to the fixed base (110).

4. The vapor growth apparatus according to claim 1, characterized in that: The radial dimension of the heat-uniform device (130) does not exceed the radial dimension of the bearing surface of the fixed base (110), and the radial dimension of the heat-uniform device (130) is not less than 95% of the radial dimension of the bearing surface of the fixed base (110).

5. The vapor phase growth apparatus according to claim 1, characterized in that: Another heat-leveling device (130) is provided between the fixed base (110) and the top wall of the process chamber (100); the top wall of the process chamber (100) is also dynamically sealed with another rotating sealing mechanism (200) connected to the other heat-leveling device (130); the radial dimension of the other heat-leveling device (130) is not less than 95% of the radial dimension of the bearing surface of the fixed base (110).

6. The vapor phase growth apparatus according to claim 5, characterized in that: A second heating device (140) is arranged between the other uniform heat device (130) and the top wall of the process chamber (100) to provide heat.

7. The vapor phase growth apparatus according to claim 1, characterized in that: The rotary sealing mechanism (200) comprises: A heat-uniform rotating shaft (210) is located in the process chamber (100), and the heat-uniform device (130) is connected to the heat-uniform rotating shaft (210); A rotating shaft (220) with a dynamic seal is disposed in the process chamber (100) and is connected to the heat-distributing rotating shaft (210) to drive the heat-distributing rotating shaft (210) to rotate; The rotation driving device (230) is arranged outside the process chamber (100) and connected to the rotating shaft (220) to provide a rotation driving force.

8. The vapor phase growth apparatus according to claim 7, characterized in that: The heat-uniform rotating shaft (210) is a telescopic rotating shaft so as to adjust the relative position between the heat-uniform device (130) and the fixed base (110).

9. The vapor phase growth apparatus according to claim 1, characterized in that: It also includes a power supply stator. The rotary sealing mechanism (200) is also provided with a rotor (241) and an electric conduction device (242). The heat uniforming device (130) includes a heating element (133). The electric conduction device (242) is arranged in the rotary sealing mechanism (200), and its two ends are respectively electrically connected to the rotor (241) and the heating element (133). The power supply stator is sleeved on the rotor and is stationary relative to the process chamber, so as to provide electric energy for generating heat for the heating element (133) through the rotational friction between the rotor (241) and the power supply stator.

10. The vapor phase growth apparatus according to claim 9, characterized in that: The power supply stator, the rotor (241) and the electrical conduction device (242) form a conductive slip ring.

11. The vapor phase growth apparatus according to claim 9, characterized in that: The rotary sealing mechanism (200) comprises a heat-distributing rotating shaft (210), a rotating shaft body (220) and a rotary driving device (230); The heat-uniform rotating shaft (210) is located in the process chamber (100) and is connected to the heat-uniform device (130); The rotating shaft (220) is dynamically sealed and disposed in the process chamber (100), connected to the heat-distributing rotating shaft (210) and extending outside the process chamber (100), so as to drive the heat-distributing rotating shaft (210) to rotate under rotational drive; The rotor (241) is located outside the process chamber (100) and is sleeved on the rotating shaft (220); The electrical conduction device (242) is electrically connected to the heating element (133), extends inside the heat-distributing shaft (210) and the rotating shaft (220), and is electrically connected to the rotor (241); The rotation driving device (230) is arranged outside the process chamber (100) and is connected to the rotating shaft (220) to provide a rotation driving force.

12. The vapor phase growth apparatus according to claim 1, characterized in that: The fixed base (110) comprises a substrate carrier (111) and an edge support structure (112), wherein the edge support structure (112) is arranged around the bottom of the substrate carrier (111) and extends toward the bottom wall of the process chamber (100); The first heating device (120) and the uniform heating device (130) are located in a space surrounded by the substrate carrier (111), the edge support structure (112) and the process chamber (100).

13. The vapor phase growth apparatus according to claim 1, characterized in that: The fixed base (110) comprises a substrate carrier (111) and a middle support structure (113), the heat equalizing device (130) is arranged around the middle support structure (113), the middle support structure (113) is connected to the middle of the substrate carrier (111), extends toward the bottom wall of the process chamber (100), and penetrates and is fixed to the rotating sealing mechanism (200), so as to remain stationary relative to the process chamber (100) when the rotating sealing mechanism (200) drives the heat equalizing device (130) to rotate.

14. The vapor phase growth apparatus according to claim 13, characterized in that: The rotary sealing mechanism (200) comprises a heat-distributing rotating shaft (210), a rotating shaft body (220), a fixed bottom plate (400) and a rotary driving device (230); The heat-uniform rotating shaft (210) is located in the process chamber (100) and is connected to the heat-uniform device (130); The rotating shaft (220) is dynamically sealed and disposed in the process chamber (100), connected to the heat-distributing rotating shaft (210) and extending outside the process chamber (100), so as to drive the heat-distributing rotating shaft (210) to rotate under rotational drive; The fixed bottom plate (400) is dynamically sealed to the bottom of the rotating shaft (220); the middle support structure (113) is fixed to the fixed bottom plate (400) after penetrating the heat-distributing rotating shaft (210) and the rotating shaft (220) from the top of the heat-distributing rotating shaft (210), so that the fixed bottom plate (400) and the middle support structure (113) are stationary relative to the process chamber (100) during the rotation of the rotating shaft (220); The rotation driving device (230) is arranged on the side wall of the rotating shaft body (220) to enable the rotating shaft body (220) to rotate.

15. The vapor growth apparatus according to claim 1, characterized in that: It also comprises a gas injection device, which is arranged on the top wall or side wall of the process chamber (100) to provide process gas to the substrate.

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