Diffusion furnace temperature control method, device and equipment for chip production and medium

Abstract

The invention relates to the field of chip production, in particular to a diffusion furnace temperature control method and device for chip production, equipment and a medium. The method comprises the following steps: by acquiring the chip data of the chip to be processed and the unprocessed technology, the system can accurately determine the required processing temperature based on the information, and the data-based temperature setting mode is more accurate than the traditional manual setting or fixed temperature setting mode; according to the invention, each chip can be processed at the temperature most suitable for the characteristics and process requirements of the chip, and further, the accurate processing temperature is beneficial to improving the production quality of the chip and reducing the defective rate caused by improper temperature. Meanwhile, automatic temperature control and processing plan generation can accelerate the production process, reduce manual intervention and waiting time, and improve the overall production efficiency while reducing the labor cost in the chip diffusion process.

Description

Technical Field

[0001] The present application relates to the field of chip production, and in particular to a temperature control method, device, equipment and medium for a diffusion furnace used in chip production. Background Art

[0002] As one of the core equipment in the front-end process of semiconductor production lines, diffusion furnaces are widely used in many fields such as large-scale integrated circuits, discrete components, power electronics, optoelectronic devices, and optical fibers. They perform a series of key process steps such as diffusion, oxidation, annealing, alloying, and sintering, and are an indispensable key component in the semiconductor manufacturing process. In order to ensure that the temperature of the diffusion furnace can be accurately controlled during operation and achieve a constant temperature environment, it is particularly important to use advanced temperature control and constant temperature equipment to firmly fix it. This not only optimizes temperature management, but also significantly improves the quality of semiconductor products.

[0003] At present, the traditional process of chip diffusion operation usually relies on manual operation: technicians need to manually place the chips to be diffused into the diffusion furnace chamber, and rely on personal experience and professional knowledge to fine-tune the temperature parameters and heating cycle in the furnace to complete the entire diffusion process. However, this highly manual parameter setting method undoubtedly increases production costs, especially labor costs, and becomes a major bottleneck restricting production efficiency and cost control. Summary of the invention

[0004] In order to reduce the labor cost in the chip diffusion process, the present application provides a temperature control method, device, equipment and medium for a diffusion furnace for chip production.

[0005] In a first aspect, the present application provides a temperature control method for a diffusion furnace for chip production, which adopts the following technical solution: A temperature control method for a diffusion furnace for chip production, comprising: Acquire chip data and unprocessed processes of the chip to be processed, wherein the chip data is used to characterize the properties of the chip to be processed, and the unprocessed process is the process that the chip to be processed needs to be performed in the diffusion device; Based on the chip data, determining a processing temperature corresponding to the unprocessed process; Based on the processing temperature corresponding to the unprocessed station, generating a processing plan corresponding to the chip to be processed; The diffusion furnace is controlled to process the chip to be processed according to the processing plan, and the processing progress of the diffusion furnace is displayed.

[0006] By adopting the above technical solution, the chip data of the chip to be processed and the unprocessed process are obtained. The system can accurately determine the required processing temperature based on this information. The temperature setting method based on data is more accurate than the traditional manual setting or fixed temperature setting. It can ensure that each chip is processed at the temperature that best suits its characteristics and process requirements. Furthermore, accurate processing temperature helps to improve the production quality of the chip and reduce the defective rate caused by improper temperature. At the same time, automated temperature control and processing plan generation can speed up the production process, reduce manual intervention and waiting time, and reduce labor costs in the chip diffusion process while improving overall production efficiency.

[0007] In a possible implementation, determining the processing temperature corresponding to the unprocessed process based on the chip data includes: Acquire the temperature change process of the raw process corresponding to the chip data; Based on the temperature change process, generating a temperature curve corresponding to the raw process; Based on the temperature curve, a processing temperature corresponding to the raw process is determined.

[0008] By adopting the above technical solution, by obtaining the temperature change process of the unprocessed process corresponding to the chip data, the temperature setting required for the process at different stages can be determined, so as to more accurately match the chip characteristics and process requirements, thereby improving the accuracy of process control. Furthermore, the generated temperature curve not only reflects the change of temperature over time, but may also include key parameters such as heating rate and cooling rate, which makes process control more flexible.

[0009] In a possible implementation, generating a processing plan corresponding to the chip to be processed based on the processing temperature corresponding to the unprocessed station includes: Based on the temperature curve, determining the processing sub-temperature corresponding to each moment; Based on the processing sub-temperature corresponding to each moment, determining the start time and the end time corresponding to the chip to be processed; Based on the start time, the end time and the processing sub-temperature corresponding to each time, a processing plan corresponding to the chip to be processed is generated.

[0010] By adopting the above technical solution, by refining the temperature curve into the processing sub-temperature corresponding to each moment, the temperature setting of the diffusion furnace at each time point can be accurately controlled, thereby ensuring the accuracy of process execution and reducing process deviations caused by temperature fluctuations or improper control. At the same time, the start and end times of the chip to be processed are determined, so that the entire processing process has a clear time frame, which improves the predictability of process execution and can accurately predict the processing cycle of each chip, thereby optimizing the production process and reducing waiting time and resource waste.

[0011] In a possible implementation, the method further includes: When the processing progress of the processing plan of the chip to be processed is 100%, a diffusion detection instruction is generated, and the diffusion detection instruction is sent to the detection device; Receiving a detection result of each of the chips to be processed sent by the detection device, wherein the detection result is a pass or a fail; When each of the detection results is passed, determining the unprocessed state of each of the chips to be processed as a completed processing state; When there is a failure in the detection result, the chip to be processed with the failure in the detection result is determined to be a target chip, and the state of the unprocessed process of the target is determined to be an unfinished processing state.

[0012] By adopting the above technical solution, when the processing plan of the chip to be processed reaches 100%, the diffusion detection instruction is automatically generated and sent to the detection device, ensuring that each chip can be timely inspected for quality after processing. The automated detection process reduces human intervention and improves the accuracy and consistency of detection. By receiving the test results sent by the detection device, the quality status of each chip can be grasped in real time. When all the test results are passed, the chip is determined to be in the completed processing state, which ensures that the quality of the factory chip meets the standards and improves the reliability of the product and customer satisfaction. When there is a situation where the test result fails, the target chip can be quickly identified and its unprocessed process is marked as unfinished, which helps production managers take timely measures, such as reprocessing, analyzing the cause or adjusting the process parameters, to avoid the recurrence of similar problems, thereby improving the overall production quality.

[0013] In a possible implementation, when the detection result is failure, the method further includes: Determining the influencing factors of the detection results of each of the target chips; When the influencing factor of the target chip is uneven diffusion, the target chip whose detection result is influenced by the uneven diffusion is determined as the first target chip; Determining a current operating state of a target diffusion furnace, the target diffusion furnace comprising two diffusion spaces, the current operating state being an operating state or an idle state; If the current operating state of the target diffusion furnace is an idle state, a processing plan corresponding to the first target chip is generated.

[0014] By adopting the above technical solution, the factors affecting the test results of each target chip are determined, which helps to accurately identify which chips have problems and the specific causes of these problems. Through this precise positioning, the specific problems on the production line can be quickly understood, so that targeted measures can be taken to improve them. For example, if multiple chips fail the test due to uneven diffusion, it may be necessary to adjust the setting parameters of the diffusion furnace or check the relevant diffusion process. This precise problem positioning not only helps to improve production efficiency, but also helps to improve product quality control and ensure that the final products shipped meet quality standards.

[0015] In a possible implementation, generating a processing plan corresponding to the first target chip includes: Acquire a temperature variation curve of a secondary diffusion process corresponding to the first target chip; Based on the temperature change curve, determining a process start time and a process end time corresponding to the diffusion process; A processing plan corresponding to the first target chip is generated based on the process start time, the process end time, and the temperature corresponding to each time of the secondary diffusion process.

[0016] By adopting the above technical solution, by generating a special secondary diffusion process plan for the first target chip, the temperature in the diffusion process can be accurately controlled based on its specific temperature change curve, which helps to solve the problem of uneven diffusion in the primary diffusion process, thereby improving the quality and qualified rate of the product. Accurate temperature control not only ensures that the chip can be heated evenly during the diffusion process, but also helps to optimize the diffusion depth and diffusion rate, making the performance parameters of the chip more stable and reliable.

[0017] In a possible implementation, when the influencing factor of the target chip is impurity contamination, the method further includes: Determine that the target chip whose influencing factor of the detection result is the uneven diffusion is the second target chip; Acquire a diffusion furnace corresponding to the second target chip, and generate a test task for the diffusion furnace corresponding to the second target chip, wherein the test task includes a test chip and a test process; The test chip process and the number of the diffusion furnace corresponding to the second target chip are sent to the terminal device of the target responsible employee, and the target responsible employee is the responsible employee corresponding to the diffusion furnace corresponding to the second target chip.

[0018] By adopting the above technical solution, by clearly distinguishing the target chips that failed the test due to impurity contamination and uneven diffusion, and testing the second target chip (i.e., the chip with uneven diffusion) and its corresponding diffusion furnace, the root cause of the quality problem can be accurately located, which helps to avoid confusing quality problems caused by different reasons, so as to take more targeted solutions. By generating a test task for the diffusion furnace corresponding to the second target chip and testing it with a test chip, the working status of the diffusion furnace and whether there are factors that affect diffusion uniformity can be accurately evaluated. This test not only helps to discover potential equipment problems, but also provides data support for subsequent equipment maintenance and improvement, thereby improving the product qualification rate.

[0019] In a second aspect, the present application provides a temperature control device for a diffusion furnace for chip production, which adopts the following technical solution: A temperature control device for a diffusion furnace for chip production, comprising: An acquisition module, used for acquiring chip data and unprocessed processes of the chip to be processed, wherein the chip data is used for characterizing the properties of the chip to be processed, and the unprocessed process is the process that the chip to be processed needs to be performed in the diffusion device; A determination module, used for determining a processing temperature corresponding to the unprocessed process based on the chip data; A generating module, used for generating a processing plan corresponding to the chip to be processed based on the processing temperature corresponding to the unprocessed station; The control module is used to control the diffusion furnace to process the chip to be processed according to the processing plan and display the processing progress of the diffusion furnace.

[0020] In a third aspect, the present application provides an electronic device, which adopts the following technical solution: An electronic device, comprising: at least one processor; Memory; At least one application, wherein the at least one application is stored in a memory and configured to be executed by at least one processor, and the at least one application is configured to: execute the temperature control method for a diffusion furnace for chip production described in the first aspect above.

[0021] In a fourth aspect, the present application provides a computer-readable storage medium, which adopts the following technical solution: A computer-readable storage medium includes: a computer program that can be loaded by a processor and execute the temperature control method of a diffusion furnace for chip production described in the first aspect.

[0022] In summary, this application includes the following beneficial technical effects: By obtaining the chip data of the chip to be processed and the unprocessed process, the system can accurately determine the required processing temperature based on this information. The temperature setting method based on data is more accurate than the traditional manual setting or fixed temperature setting, which can ensure that each chip is processed at the temperature that best suits its characteristics and process requirements. Furthermore, accurate processing temperature helps to improve the production quality of the chip and reduce the defective rate caused by improper temperature. At the same time, automated temperature control and processing plan generation can speed up the production process, reduce manual intervention and waiting time, and reduce labor costs in the chip diffusion process while improving overall production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic flow chart of a temperature control method for a diffusion furnace for chip production provided in an embodiment of the present application; Figure 2 It is a block diagram of a temperature control device for a diffusion furnace for chip production provided in an embodiment of the present application; Figure 3 It is a schematic diagram of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0024] The following is combined with Figure 1 -Attached Figure 3 This application is described in further detail.

[0025] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0026] In order to facilitate understanding of the technical solution proposed in this application, several elements introduced in the description of this application are first introduced here. It should be understood that the following introduction is only for the convenience of understanding these elements, so as to understand the content of the embodiments of this application, and does not necessarily cover all possible situations.

[0027] The temperature control of the diffusion furnace in chip production is a crucial link, which is directly related to the quality and performance of the chip. The temperature control system of the diffusion furnace usually includes a host computer, a slave computer, a temperature detection device, a thyristor device, and a heating power adjustment component. The host computer is responsible for setting the target temperature value and comparing it with the actual furnace temperature feedback value obtained by the temperature detection device. The comparison result is sent to the slave computer in the form of an electrical signal. The slave computer calculates the control amount through the temperature control algorithm, triggers the thyristor device to adjust the heating power, and thus realizes temperature control.

[0028] In the chip manufacturing process, the diffusion furnace is mainly used to perform operations such as diffusion and oxidation. Specifically, the diffusion operation: diffusion is a way of doping (the other is ion implantation), which allows dopants (such as phosphorus, boron, etc.) to enter the silicon substrate through a high temperature environment to change its electrical properties. In the diffusion furnace, the dopant reacts with the silicon substrate at high temperature, allowing the dopant atoms to diffuse to a certain depth of the silicon substrate to form the required N-well, P-well or other doped areas. This process is crucial for the subsequent manufacture of devices such as transistors. The diffusion operation usually includes steps such as pre-deposition, advancement and activation. In actual operation, it may also involve multiple links such as quality testing, batch control systems, process menus, and cleaning of silicon wafers.

[0029] Oxidation operation: The oxidation process forms a protective film on the surface of the wafer (that is, the unprocessed chip), mainly silicon dioxide (SiO2). This protective film can protect the wafer from chemical impurities, prevent leakage current from entering the circuit, prevent diffusion during ion implantation, and prevent the wafer from slipping during etching. In the diffusion furnace, the wafer is placed in a high temperature environment, and a silicon dioxide layer is formed by the flow of oxygen or steam on the surface of the wafer. Oxygen diffuses through the oxide layer and reacts with silicon to form oxide layers of different thicknesses, the thickness of which can be adjusted as needed. After the oxidation is completed, the thickness of the oxide layer is usually measured to ensure that it meets the design requirements.

[0030] Since the diffusion process is an important part of the chip manufacturing process, its quality directly affects the electrical performance and reliability of the chip. Therefore, the diffused chip can be tested by a detection device, and problems in the diffusion process such as uneven diffusion and impurity contamination can be discovered in time based on the test results, so that corresponding measures can be taken to correct them and ensure the quality of the chip.

[0031] At present, the traditional process of chip diffusion operation usually relies on manual operation: technicians need to manually place the chips to be diffused into the diffusion furnace chamber, and rely on personal experience and professional knowledge to fine-tune the temperature parameters and heating cycle in the furnace to complete the entire diffusion process. However, this highly manual parameter setting method undoubtedly increases production costs, especially labor costs, and becomes a major bottleneck restricting production efficiency and cost control.

[0032] In view of this, an embodiment of the present application provides a temperature control method for a diffusion furnace for chip production, and the temperature control method for a diffusion furnace for chip production is applied to a temperature control system for a diffusion furnace for chip production. The temperature control system for a diffusion furnace for chip production includes electronic equipment, at least one diffusion furnace and a detection device. The detection device is used to detect the diffusion quality of the chip after diffusion. The electronic equipment is respectively connected to the diffusion furnace and the detection device. The electronic equipment can adjust the temperature parameters and time parameters of the diffusion furnace, etc. At the same time, the electronic equipment can obtain the detection results obtained by the detection device.

[0033] like Figure 1 As shown, the method provided in the embodiment of the present application is executed by an electronic device, which can be a server or a terminal device, wherein the server can be an independent physical server, or a server cluster or distributed system composed of multiple physical servers, or a cloud server providing cloud computing services. The terminal device can be a smart phone, a tablet computer, a laptop computer, a desktop computer, etc., but is not limited thereto. The terminal device and the server can be directly or indirectly connected via wired or wireless communication, which is not limited in the embodiment of the present application. The method includes steps S101 to S104, wherein: Step S101, obtaining chip data of a chip to be processed and an unprocessed process.

[0034] Among them, chip data is used to characterize the properties of the chip to be processed, which include materials, size, and shape. Different chip materials (such as silicon, germanium, etc.) and types (such as CMOS, BJT, etc.) have different requirements for diffusion temperature. For example, the diffusion temperature of silicon-based chips is usually higher, while chips made of certain special materials may require lower temperatures. At the same time, the size and shape of the chip will also affect the choice of diffusion temperature. Larger chips may require higher temperatures to ensure that the doping elements are evenly diffused throughout the chip. In addition, the thickness and shape of the chip will also affect heat conduction and temperature distribution. The unprocessed process is a process that the chip to be processed needs to be carried out in a diffusion device. The unprocessed process can be diffusion and / or oxidation.

[0035] Specifically, before placing the chip to be diffused into the diffusion furnace, the operator will input the chip data and processing technology of the chip to be diffused into the electronic device. The electronic device receives the chip data of the chip to be diffused at the current moment, that is, the chip data of the chip to be processed, and receives the unprocessed technology of the chip to be processed.

[0036] Step S102: Determine the processing temperature corresponding to the unprocessed process based on the chip data.

[0037] After obtaining the chip data, the first temperature range corresponding to the chip material of the chip to be processed can be obtained from the chip database, and based on the size of the chip to be processed, the second temperature corresponding to the chip to be processed can be selected from the first temperature range. The chip database includes the temperature range corresponding to each chip material and the temperatures corresponding to different sizes of each chip material.

[0038] Furthermore, after obtaining the second temperature corresponding to the chip to be processed, the processing flow corresponding to the chip material of the chip to be processed is obtained, so as to obtain the processing temperature required for processing the chip to be processed based on the processing flow, wherein the processing flow is the processing stage corresponding to each time period, and the processing flow generally includes a heating stage, a main processing stage, and a cooling stage. Specifically, after obtaining the processing stage corresponding to each time period, the second temperature is used as the main processing temperature corresponding to the chip to be processed, and based on the main processing temperature and the processing flow, the main processing time period corresponding to the main processing temperature is obtained. Based on the current temperature and the second temperature, the heating temperature corresponding to the heating stage is determined, and based on the second temperature and the preset cooling temperature, the cooling temperature corresponding to the cooling stage is determined, so as to generate the required processing temperature curve based on the main processing temperature, the heating temperature, and the cooling temperature, so as to obtain the processing temperature corresponding to each moment.

[0039] Wherein, based on the current temperature and the second temperature, the process of determining the heating temperature corresponding to the heating stage can be: taking the current temperature as the initial temperature, taking the second temperature as the end temperature, taking the duration corresponding to the heating stage as the working duration, inputting the initial temperature, the end temperature and the working duration into the trained temperature model, so as to obtain the temperature corresponding to each moment in the working duration output by the temperature model, so as to obtain the heating temperature corresponding to each moment in the heating stage. Wherein, the temperature model is trained through a large number of initial temperature samples, end temperature samples, working duration samples and temperature samples corresponding to each moment.

[0040] Based on the second temperature and the preset cooling temperature, the process of determining the cooling temperature corresponding to the cooling stage can be: taking the second temperature as the initial temperature, the preset cooling temperature as the end temperature, and the duration corresponding to the cooling stage as the working duration, and inputting the initial temperature, the end temperature and the working duration into the trained temperature model to obtain the temperature corresponding to each moment in the working duration output by the temperature model, so as to obtain the cooling temperature corresponding to each moment in the cooling stage.

[0041] Step S103: Generate a processing plan corresponding to the chip to be processed based on the processing temperature corresponding to the unprocessed station.

[0042] After obtaining the processing temperature curve corresponding to the chip to be processed, the processing temperature corresponding to each moment of the chip to be processed during the process can be obtained, and based on the processing temperature corresponding to each moment, a processing plan corresponding to the chip to be processed is generated. Specifically, based on the heating time period corresponding to the heating stage, a first heating plan including the current heating temperature corresponding to the heating time period is determined; similarly, based on the main processing temperature and the main time period corresponding to the main processing stage, a second heating plan including the main processing temperature and the main time period is generated; based on the cooling time period corresponding to the cooling stage, a third heating plan including the current cooling temperature corresponding to the cooling time period is determined.

[0043] Furthermore, after obtaining the first heating plan, the second processing plan and the third heating plan, a processing plan corresponding to the chip to be processed is obtained.

[0044] Step S104, controlling the diffusion furnace to process the chip to be processed according to the processing plan, and displaying the processing progress of the diffusion furnace.

[0045] After receiving the signal from the operator to put the chip to be processed into the diffusion furnace, the electronic device starts the processing process and sends instructions to the temperature controller of the diffusion furnace to start heating according to the processing plan. At the same time, the sensor monitors the temperature and stage in the diffusion furnace in real time. The electronic device receives the sensor data and sends the processing progress information (such as the current stage, remaining time, temperature status, etc.) to the display device so that the operator can view the processing progress in real time through the display device.

[0046] The embodiment of the present application provides a temperature control method for a diffusion furnace for chip production. By obtaining the chip data of the chip to be processed and the unprocessed process, the system can accurately determine the required processing temperature based on this information. The data-based temperature setting method is more accurate than the traditional manual setting or fixed temperature setting, and can ensure that each chip is processed at a temperature that best suits its characteristics and process requirements. Furthermore, the accurate processing temperature helps to improve the production quality of the chip and reduce the defective rate caused by improper temperature. At the same time, automated temperature control and processing plan generation can speed up the production process, reduce manual intervention and waiting time, and reduce the labor cost in the chip diffusion process while improving overall production efficiency.

[0047] A possible implementation of the embodiment of the present application is that in the above step S103, based on the chip data, the processing temperature corresponding to the unprocessed process is determined, including: Obtain the temperature change process of the raw process corresponding to the chip data; Based on the temperature change process, a temperature curve corresponding to the unprocessed process is generated; Based on the temperature curve, the processing temperature corresponding to the unprocessed process is determined.

[0048] Specifically, the processing stage corresponding to the chip material of the chip to be processed and the processing temperature corresponding to each processing stage are obtained, and the duration corresponding to each processing stage is obtained. Based on the duration corresponding to each processing stage and the processing temperature corresponding to each processing stage, a temperature change curve is established to obtain the temperature change process of the unprocessed process corresponding to the chip to be processed. The temperature in the temperature change curve is the temperature in the diffusion furnace.

[0049] Further, after obtaining the temperature change curve of the raw process, the temperature change curve is input into the processing model to obtain the temperature curve outputted in the processing model, wherein the processing model is trained by a large number of temperature change curve samples and temperature curve samples. The temperature in the temperature curve is the temperature set by the diffusion furnace.

[0050] Furthermore, after the temperature curve corresponding to the unprocessed process is obtained, the processing temperature corresponding to the unprocessed process is obtained based on the temperature corresponding to each moment in the temperature curve.

[0051] A possible implementation of the embodiment of the present application is that in the above step S103, based on the processing temperature corresponding to the unprocessed station, a processing plan corresponding to the chip to be processed is generated, including: Based on the temperature curve, determine the processing sub-temperature corresponding to each moment; Based on the processing sub-temperature corresponding to each moment, determining the start time and end time corresponding to the chip to be processed; Based on the start time, the end time and the processing sub-temperature corresponding to each time, a processing plan corresponding to the chip to be processed is generated.

[0052] Specifically, by reading the temperature curve data, the temperature curve is decomposed into a series of time-temperature pairs, that is, the specific temperature value (processing sub-temperature) at each time point, and based on the time corresponding to the first non-zero set temperature in the temperature curve data, the corresponding start time of the chip to be processed is obtained. At the same time, based on the time corresponding to the second non-zero set temperature, the corresponding end time of the chip to be processed is obtained.

[0053] Furthermore, each time-temperature pair (processing sub-temperature) obtained by the analysis is arranged in chronological order to form a detailed time-temperature list. According to the process requirements, each point in the time-temperature list is assigned to different process steps. For example, the heating stage, the main processing stage and the cooling stage, etc.

[0054] Based on the time-temperature list and process steps, a processing plan is developed including the start and end time and temperature setpoints for each process step.

[0055] A possible implementation manner of the embodiment of the present application, in the above embodiment, the method further includes: When the processing progress of the processing plan of the chip to be processed is 100%, a diffusion detection instruction is generated, and the diffusion detection instruction is sent to the detection device; Receiving the test result of each chip to be processed sent by the testing device, the test result being a pass or a fail; When each test result is passed, determining the unprocessed state of each chip to be processed as a completed processing state; When there is a detection result of failure, the chip to be processed with the detection result of failure is determined as a target chip, and the state of the unprocessed process of the target is determined as an unfinished processing state.

[0056] The test result is passed or failed. When the test result is failed, the test result also includes the influencing factors of the failure, which are generally uneven diffusion or scratches or impurities on the surface.

[0057] Specifically, when the completion rate of the processing plan of a chip to be processed reaches 100%, that is, when the end time is reached, a diffusion detection instruction is generated and sent to the detection device. After receiving the diffusion detection instruction, the detection device detects the chip to be processed according to the instruction requirements and sends the detection result back to the electronic device.

[0058] The electronic device receives the test results of each chip to be processed. If the test results of all the chips to be processed are passed, the unprocessed process status of these chips is determined as the completed process status; if there are chips to be processed with unpassed test results, these chips are determined as target chips, and their unprocessed process status is determined as the unfinished process status.

[0059] In a possible implementation manner of the embodiment of the present application, in the above embodiment, when the detection result is not passed, the method further includes: Determine the factors affecting the test results of each target chip; When there is a target chip whose influencing factor is uneven diffusion, the target chip whose influencing factor for the detection result is uneven diffusion is determined as the first target chip; Determine a current operating state of a target diffusion furnace, the target diffusion furnace includes two diffusion spaces, and the current operating state is an operating state or an idle state; If the current operating state of the target diffusion furnace is an idle state, a processing plan corresponding to the first target chip is generated.

[0060] The target diffusion furnace includes two diffusion spaces, which are two independent spaces, and each diffusion space corresponds to a control system. The two diffusion spaces can heat the chips inside them at different temperatures.

[0061] Specifically, after receiving the test results of the target chip, the influencing factors in the test results are identified to determine the specific reasons for the test failure. If there are chips to be processed that have failed test results and the influencing factors are uneven diffusion, these chips are determined as the first target chips.

[0062] Furthermore, the current operating status of the target diffusion furnace is queried to determine whether there is an idle target diffusion furnace. If there is an idle target diffusion furnace, the first target chip can be placed in the first diffusion space in the target diffusion furnace, and the new chip to be processed can be placed in the second diffusion space in the target diffusion furnace, so that the target diffusion furnace can diffuse the first target chip and the new chip to be processed respectively.

[0063] Specifically, the current operating state of the target diffusion furnace is returned, and it is determined whether the target diffusion furnace is in an operating state or an idle state. The operating state means that the diffusion furnace is performing other processing tasks, while the idle state means that the diffusion furnace currently has no tasks and can accept new processing plans.

[0064] If the target diffusion furnace is in an idle state, a new processing plan can be formulated for the first target chip. Specifically, the processing stage corresponding to the reprocessing and the temperature requirements and time requirements corresponding to each processing stage are obtained, and a temperature curve corresponding to the reprocessing is generated based on the temperature requirements and time requirements corresponding to each processing stage to generate a processing plan corresponding to the first target chip.

[0065] If there is no target diffusion furnace in an idle state, the remaining operating time corresponding to each target diffusion furnace is obtained, and the target diffusion furnace with the shortest remaining operating time is used as the target diffusion furnace corresponding to the first target chip, and a new processing plan is formulated for the first target chip.

[0066] A possible implementation of the embodiment of the present application, in the above embodiment, generating a processing plan corresponding to the first target chip includes: Obtaining a temperature variation curve of a secondary diffusion process corresponding to a first target chip; Based on the temperature change curve, determine the process start time and process end time corresponding to the diffusion process; A processing plan corresponding to the first target chip is generated based on the process start time, the process end time, and the temperature corresponding to each time corresponding to the secondary diffusion process.

[0067] Specifically, by reading the temperature change curve, the temperature change curve is decomposed into a series of time-temperature pairs, and the process start time corresponding to the first target chip is obtained based on the time corresponding to the first non-zero set temperature in the temperature change curve. At the same time, based on the time corresponding to the second non-zero set temperature on the temperature change curve, the process end time corresponding to the first target chip is obtained.

[0068] Furthermore, each time-temperature pair (processing sub-temperature) obtained by the analysis is arranged in chronological order to form a detailed time-temperature list. According to the process requirements, the various points in the time-temperature list are assigned to different process steps. For example, the heating stage, the main processing stage, and the cooling stage. Based on the time-temperature list and the process steps, a processing plan including the start and end time and temperature setting value of each process step is formulated.

[0069] In a possible implementation manner of the embodiment of the present application, in the above embodiment, when the influencing factor of the target chip is impurity contamination, the method further includes: Determine that the target chip whose influencing factor of the detection result is the uneven diffusion is the second target chip; Acquire a diffusion furnace corresponding to the second target chip, and generate a test task for the diffusion furnace corresponding to the second target chip, wherein the test task includes a test chip and a test process; The test chip process and the number of the diffusion furnace corresponding to the second target chip are sent to the terminal device of the target responsible employee, and the target responsible employee is the responsible employee corresponding to the diffusion furnace corresponding to the second target chip.

[0070] Specifically, after receiving the test results of the target chip, the influencing factors in the test results are identified to determine the specific reasons for the test failure. When the influencing factor of the target chip is impurity contamination, the target chips that fail the test due to impurity contamination are determined as second target chips to distinguish them from the first target chips that fail the test due to uneven diffusion.

[0071] Further, the processing process corresponding to each second target chip is obtained to obtain the diffusion furnace corresponding to each second target chip. A test task is formulated for the determined diffusion furnace. The test task should include using a specific test chip and a test process to evaluate the performance and cleanliness of the diffusion furnace. The test chip can be a chip of the same type as the second target chip, or a dedicated chip for a specific test purpose. The test process should be able to simulate the process conditions in actual production and highlight possible impurity contamination problems.

[0072] Furthermore, the responsible employee associated with the diffusion furnace corresponding to the second target chip is obtained. The responsible employee is the person responsible for the daily operation and maintenance of the diffusion furnace. The information of the test task (including the test chip, test process, and diffusion furnace number) is sent to the terminal device of the target responsible employee. This can be achieved through email, text message, corporate communication tools or internal management system. When sending information, the accuracy and completeness of the information should be ensured so that the responsible employee can clearly understand the requirements and purpose of the test task. After receiving the test task information, the responsible employee should perform the test task as required and record the test results. The test results should include the quality data of the test chip, the performance parameters of the diffusion furnace, and any observed abnormalities.

[0073] The above embodiment introduces a temperature control method for a diffusion furnace for chip production from the perspective of a method flow, and the following embodiment introduces a temperature control device for a diffusion furnace for chip production from the perspective of a virtual module or a virtual unit. For details, please refer to the following embodiment.

[0074] See also Figure 2 The temperature control device 20 for a diffusion furnace for chip production may specifically include: an acquisition module 201, a determination module 202, a generation module 203 and a control module 204. Specifically: A temperature control device 20 for a diffusion furnace for chip production, comprising: An acquisition module 201 is used to acquire chip data and an unprocessed process of the chip to be processed, wherein the chip data is used to characterize the properties of the chip to be processed, and the unprocessed process is the process that the chip to be processed needs to be performed in the diffusion device; A determination module 202, for determining a processing temperature corresponding to an unprocessed process based on chip data; A generating module 203, for generating a processing plan corresponding to the chip to be processed based on the processing temperature corresponding to the unprocessed station; The control module 204 is used to control the diffusion furnace to process the chips to be processed according to the processing plan and to display the processing progress of the diffusion furnace.

[0075] In a possible implementation of the embodiment of the present application, the determination module 202 determines the processing temperature corresponding to the unprocessed process based on the chip data, including: Obtain the temperature change process of the raw process corresponding to the chip data; Based on the temperature change process, a temperature curve corresponding to the unprocessed process is generated; Based on the temperature curve, the processing temperature corresponding to the unprocessed process is determined.

[0076] In a possible implementation of the embodiment of the present application, the determination module 202 generates a processing plan corresponding to the chip to be processed based on the processing temperature corresponding to the unprocessed station, including: Based on the temperature curve, determine the processing sub-temperature corresponding to each moment; Based on the processing sub-temperature corresponding to each moment, determining the start time and end time corresponding to the chip to be processed; Based on the start time, the end time and the processing sub-temperature corresponding to each time, a processing plan corresponding to the chip to be processed is generated.

[0077] In a possible implementation of the embodiment of the present application, the temperature control device 20 for a diffusion furnace for chip production may further include: A first generating module is used to generate a diffusion detection instruction when the processing progress of the processing plan of the chip to be processed is 100%, and send the diffusion detection instruction to the detection device; A receiving module, used for receiving the detection result of each chip to be processed sent by the detection device, the detection result being a pass or a fail; A first determination module is used to determine that the unprocessed state of each chip to be processed is a completed processing state when each detection result is passed; The second determination module is used to determine that the chip to be processed with the failed detection result is a target chip when there is a failed detection result, and determine that the state of the unprocessed process of the target is an unfinished processing state.

[0078] In a possible implementation of the embodiment of the present application, when the detection result is not passed, the temperature control device 20 for the diffusion furnace for chip production may further include: A third determination module is used to determine the influencing factors of the detection result of each target chip; A fourth determination module is used for, when there is a target chip whose influencing factor is the uneven diffusion, determining the target chip whose influencing factor of the detection result is the uneven diffusion as the first target chip; a fifth determining module, configured to determine a current operating state of a target diffusion furnace, the target diffusion furnace comprising two diffusion spaces, and the current operating state being an operating state or an idle state; The second generating module is used to generate a processing plan corresponding to the first target chip if the current operating state of the target diffusion furnace is an idle state.

[0079] In a possible implementation of the embodiment of the present application, the second generation module generates a processing plan corresponding to the first target chip, including: Obtaining a temperature variation curve of a secondary diffusion process corresponding to a first target chip; Based on the temperature change curve, determine the process start time and process end time corresponding to the diffusion process; A processing plan corresponding to the first target chip is generated based on the process start time, the process end time, and the temperature corresponding to each time corresponding to the secondary diffusion process.

[0080] In a possible implementation of the embodiment of the present application, when the influencing factor of the target chip is impurity contamination, the temperature control device 20 for the diffusion furnace for chip production may further include: A sixth determination module, configured to determine that the target chip whose influencing factor of the detection result is uneven diffusion is the second target chip; A diffusion furnace acquisition module, used to acquire the diffusion furnace corresponding to the second target chip, and generate a test task for the diffusion furnace corresponding to the second target chip, the test task including a test chip and a test process; The sending module is used to send the test chip process and the number of the diffusion furnace corresponding to the second target chip to the terminal device of the target responsible employee, who is the responsible employee corresponding to the diffusion furnace corresponding to the second target chip.

[0081] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0082] See also Figure 3 , the embodiment of the present application also introduces an electronic device from the perspective of a physical device, such as Figure 3 As shown, Figure 3 The electronic device 30 shown includes: a processor 301 and a memory 303. The processor 301 and the memory 303 are connected, such as through a bus 302. Optionally, the electronic device 30 may also include a transceiver 304. It should be noted that in actual applications, the transceiver 304 is not limited to one, and the structure of the electronic device 30 does not constitute a limitation on the embodiments of the present application.

[0083] The processor 301 may be a CPU (Central Processing Unit), a general-purpose processor, a DSP (Digital Signal Processor), an ASIC (Application Specific Integrated Circuit), an FPGA (Field Programmable Gate Array) or other programmable logic devices, transistor logic devices, hardware components or any combination thereof. It may implement or execute various exemplary logic blocks, modules and circuits described in conjunction with the disclosure of this application. The processor 301 may also be a combination that implements computing functions, such as a combination of one or more microprocessors, a combination of a DSP and a microprocessor, etc.

[0084] The bus 302 may include a path to transmit information between the above components. The bus 302 may be a PCI (Peripheral Component Interconnect) bus or an EISA (Extended Industry Standard Architecture) bus. The bus 302 may be divided into an address bus, a data bus, a control bus, etc. For ease of representation, Figure 3 Only one thick line is used in the diagram, but this does not mean that there is only one bus or only one type of bus.

[0085] The memory 303 may be a ROM (Read Only Memory) or other types of static storage devices that can store static information and instructions, a RAM (Random Access Memory) or other types of dynamic storage devices that can store information and instructions, or an EEPROM (Electrically Erasable Programmable Read Only Memory), a CD-ROM (Compact Disc Read Only Memory) or other optical disk storage, optical disk storage (including compressed optical disk, laser disk, optical disk, digital versatile disk, Blu-ray disk, etc.), a magnetic disk storage medium or other magnetic storage device, or any other medium that can be used to carry or store the desired program code in the form of instructions or data structures and can be accessed by a computer, but is not limited thereto.

[0086] The memory 303 is used to store the application code for executing the solution of the present application, and the execution is controlled by the processor 301. The processor 301 is used to execute the application code stored in the memory 303 to implement the contents shown in the above method embodiment.

[0087] The electronic devices include but are not limited to: mobile phones, laptop computers, digital broadcast receivers, PDAs (personal digital assistants), PADs (tablet computers), PMPs (portable multimedia players), vehicle-mounted terminals (such as vehicle-mounted navigation terminals), etc., and fixed terminals such as digital TVs, desktop computers, etc., and can also be servers, etc. Figure 3 The electronic device shown is merely an example and should not bring any limitation to the functions and scope of use of the embodiments of the present application.

[0088] An embodiment of the present application provides a computer-readable storage medium, on which a computer program is stored. When the computer-readable storage medium is run on a computer, the computer can execute the corresponding content in the aforementioned method embodiment.

[0089] It should be understood that, although the steps in the flowchart of the accompanying drawings are displayed in sequence as indicated by the arrows, these steps are not necessarily executed in sequence in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least a part of the steps in the flowchart of the accompanying drawings may include multiple sub-steps or multiple stages, and these sub-steps or stages are not necessarily executed at the same time, but can be executed at different times, and their execution order is not necessarily sequential, but can be executed in turn or alternately with other steps or at least a part of the sub-steps or stages of other steps.

[0090] The above are only some implementation methods of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications should also be regarded as the scope of protection of the present application.

Claims

1. A temperature control method for a diffusion furnace for chip production, characterized in that: The temperature control method of a diffusion furnace for chip production is applied to a temperature control system of a diffusion furnace for chip production. The temperature control system of a diffusion furnace for chip production includes electronic equipment, a diffusion furnace and a detection device. The temperature control method of a diffusion furnace for chip production is performed by the electronic equipment. The method includes: Acquire chip data and unprocessed processes of the chip to be processed, wherein the chip data is used to characterize the properties of the chip to be processed, and the unprocessed process is the process that the chip to be processed needs to be performed in the diffusion device; Based on the chip data, determining a processing temperature corresponding to the unprocessed process; Based on the processing temperature corresponding to the unprocessed station, generating a processing plan corresponding to the chip to be processed; The diffusion furnace is controlled to process the chip to be processed according to the processing plan, and the processing progress of the diffusion furnace is displayed.

2. The temperature control method of a diffusion furnace for chip production according to claim 1, characterized in that: The step of determining the processing temperature corresponding to the unprocessed process based on the chip data includes: Acquire the temperature change process of the raw process corresponding to the chip data; Based on the temperature change process, generating a temperature curve corresponding to the raw process; Based on the temperature curve, a processing temperature corresponding to the raw process is determined.

3. The temperature control method of a diffusion furnace for chip production according to claim 2, characterized in that: The step of generating a processing plan corresponding to the chip to be processed based on the processing temperature corresponding to the unprocessed station includes: Based on the temperature curve, determining the processing sub-temperature corresponding to each moment; Based on the processing sub-temperature corresponding to each moment, determining the start time and the end time corresponding to the chip to be processed; Based on the start time, the end time and the processing sub-temperature corresponding to each time, a processing plan corresponding to the chip to be processed is generated.

4. The temperature control method of a diffusion furnace for chip production according to claim 1, characterized in that: The method further comprises: When the processing progress of the processing plan of the chip to be processed is 100%, a diffusion detection instruction is generated, and the diffusion detection instruction is sent to the detection device; Receiving a detection result of each of the chips to be processed sent by the detection device, wherein the detection result is a pass or a fail; When each of the detection results is passed, determining the unprocessed state of each of the chips to be processed as a completed processing state; When there is a failure in the detection result, the chip to be processed with the failure in the detection result is determined to be a target chip, and the state of the unprocessed process of the target is determined to be an unfinished processing state.

5. The temperature control method of a diffusion furnace for chip production according to claim 4, characterized in that: When the detection result is not passed, the method further includes: Determining the influencing factors of the detection results of each of the target chips; When the influencing factor of the target chip is uneven diffusion, the target chip whose detection result is influenced by the uneven diffusion is determined as the first target chip; Determining a current operating state of a target diffusion furnace, the target diffusion furnace comprising two diffusion spaces, the current operating state being an operating state or an idle state; If the current operating state of the target diffusion furnace is an idle state, a processing plan corresponding to the first target chip is generated.

6. The temperature control method of a diffusion furnace for chip production according to claim 5, characterized in that: The generating of the processing plan corresponding to the first target chip includes: Acquire a temperature variation curve of a secondary diffusion process corresponding to the first target chip; Based on the temperature change curve, determining a process start time and a process end time corresponding to the diffusion process; A processing plan corresponding to the first target chip is generated based on the process start time, the process end time, and the temperature corresponding to each time of the secondary diffusion process.

7. The temperature control method of a diffusion furnace for chip production according to claim 5, characterized in that: When the influencing factor of the target chip is impurity contamination, the method further includes: Determine that the target chip whose influencing factor of the detection result is the uneven diffusion is the second target chip; Acquire a diffusion furnace corresponding to the second target chip, and generate a test task for the diffusion furnace corresponding to the second target chip, wherein the test task includes a test chip and a test process; The test chip process and the number of the diffusion furnace corresponding to the second target chip are sent to the terminal device of the target responsible employee, and the target responsible employee is the responsible employee corresponding to the diffusion furnace corresponding to the second target chip.

8. A temperature control device for a diffusion furnace for chip production, characterized in that: include: An acquisition module, used for acquiring chip data and unprocessed processes of the chip to be processed, wherein the chip data is used for characterizing the properties of the chip to be processed, and the unprocessed process is the process that the chip to be processed needs to be performed in the diffusion device; A determination module, used for determining a processing temperature corresponding to the unprocessed process based on the chip data; A generating module, used for generating a processing plan corresponding to the chip to be processed based on the processing temperature corresponding to the unprocessed station; The control module is used to control the diffusion furnace to process the chip to be processed according to the processing plan and display the processing progress of the diffusion furnace.

9. An electronic device, characterized in that: The electronic device includes: at least one processor; Memory; At least one application, wherein the at least one application is stored in a memory and configured to be executed by at least one processor, and the at least one application is configured to: execute the temperature control method for a diffusion furnace for chip production according to any one of claims 1 to 7.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed in a computer, the computer is caused to execute the temperature control method of a diffusion furnace for chip production according to any one of claims 1 to 7.

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