Metallized film capacitor capacity attenuation processing method and system

Abstract

The invention belongs to the technical field of electronic equipment fault processing, and discloses a metallized film capacitor capacity attenuation processing method and system, and the method comprises the steps: firstly obtaining historical data of an integrated circuit, and building a corresponding relation library of operation standard vectors and component data; establishing a circuit simulation model, and calculating a capacitance characteristic deviation vector; when it is detected that the real-time operation parameters are abnormal, real-time operation vectors are constructed, similar historical states are matched from the relation library, and corresponding component data are obtained; a simulation operation vector is obtained by using the simulation model, and correction is performed by using the capacitance characteristic deviation vector; the correlation between the operation vector and the real-time operation vector is corrected through analysis; if the correlation exists, extracting capacitor component data and outputting an analysis report; and if no correlation exists, determining that the problem is a non-capacitance problem and generating a corresponding report. The fault diagnosis efficiency and accuracy are improved, and rapid positioning and maintenance of the fault capacitor are realized.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic equipment fault processing, and more specifically, to a method and system for processing capacity attenuation of a metallized film capacitor. Background Art

[0002] With the rapid development of electronic technology, integrated circuits play an increasingly important role in modern electronic devices. As one of the key components in integrated circuits, capacitors play an indispensable role in signal filtering, energy storage, decoupling and voltage regulation. However, due to various factors such as temperature changes, voltage stress and aging, the performance of capacitors may decay over time, causing abnormalities or failures in integrated circuits. This decay not only affects the normal operation of the circuit, but may also cause the performance of the entire system to degrade or fail.

[0003] When an integrated circuit fails, traditional fault diagnosis methods often require technicians to test each component in the circuit one by one. This method is not only time-consuming and labor-intensive, but also difficult to fully and accurately locate the problem in a complex integrated circuit. Especially for passive components such as capacitors, their performance degradation is often gradual, which increases the difficulty of diagnosis. In order to improve the efficiency of fault diagnosis, some existing technologies use circuit simulation software to simulate possible problem scenarios to identify and locate faulty components. Although this method improves the diagnostic efficiency to a certain extent, there is a certain deviation between the simulation results of the simulation software and the actual situation. This makes the simulation-based fault diagnosis method inaccurate when dealing with capacitor-related problems, which in turn leads to low maintenance efficiency. Summary of the invention

[0004] In order to overcome the problem of low maintenance efficiency in the prior art, the present invention proposes a method and system for processing capacity attenuation of a metallized film capacitor to solve the above problem.

[0005] The present invention provides the following technical solutions:

[0006] A method for processing capacity attenuation of a metallized film capacitor, comprising:

[0007] Acquire historical data of the integrated circuit, the historical data including operating parameters and component data, and establish a corresponding relationship library between operating standard vectors and component data based on the historical data;

[0008] A circuit simulation model is established according to the actual structure of the integrated circuit, and a capacitance characteristic deviation vector is calculated based on historical data and output data of the circuit simulation model;

[0009] Collecting and monitoring real-time operating parameters of the integrated circuit, and when there are operating parameters in the real-time operating parameters that exceed a preset threshold, constructing a real-time operating vector according to the real-time operating parameters;

[0010] Obtain corresponding component data from a corresponding relationship library between operating standard vectors and component data according to the real-time operating vector;

[0011] According to the acquired component data and the circuit simulation model, a simulation operation vector is obtained; the simulation operation vector is corrected using the capacitance characteristic deviation vector to obtain a corrected operation vector;

[0012] Analyze whether there is a correlation between the correction operation vector and the real-time operation vector;

[0013] If there is a correlation, the component data of capacitor type is extracted, and a capacitance analysis report is outputted according to the extracted component data;

[0014] If there is no correlation, it is determined that the problem is not caused by the capacitor and a corresponding report is generated.

[0015] Preferably, the component data includes number, type and attribute; the operating parameters include output voltage, efficiency, power factor and total harmonic distortion.

[0016] Preferably, the step of establishing a corresponding relationship library between operation vectors and component data according to historical data includes:

[0017] Extract component data of capacitor type from historical data;

[0018] According to the extracted component data, historical data of capacitor type with the same number and attribute are grouped together;

[0019] For each set of historical data, the operating parameters corresponding to each piece of historical data are extracted, and the extracted operating parameters are normalized to obtain four normalized values, and the four normalized values ​​are used to form a corresponding standard vector;

[0020] For all standard vectors corresponding to each set of historical data, one of the standard vectors is obtained as the running standard vector according to the distance between the standard vectors, and the corresponding relationship between the component data in the set of historical data and the running standard vector is established;

[0021] The correspondence between the component data in each set of historical data and the operating standard vector is integrated to form a corresponding relationship library between the operating standard vector and the component data.

[0022] Preferably, the step of obtaining one of the standard vectors as the running standard vector according to the distance between the standard vectors includes:

[0023] For all standard vectors corresponding to each set of historical data, the sum of their Euclidean distances with all other standard vectors is calculated as the vector distance;

[0024] Set a distance threshold, mark the standard vector whose vector distance exceeds the distance threshold as an abnormal vector and exclude it;

[0025] For the remaining standard vectors, the vector distance is recalculated, and a standard vector with the smallest vector distance is selected as the running standard vector.

[0026] Preferably, the step of calculating the capacitance characteristic deviation vector based on the historical data and the output data of the circuit simulation model comprises:

[0027] Selecting a benchmark historical data from the historical data, and obtaining a benchmark deviation vector according to the benchmark historical data and the circuit simulation model; wherein the benchmark historical data is: historical data in which all component attributes in the component data are rated values;

[0028] Select x capacitance difference historical data from the historical data, and obtain a total deviation vector according to the capacitance difference historical data and the circuit simulation model; wherein the capacitance difference historical data is: historical data in which the capacitance attribute in the component data deviates from the rated value and other component attributes maintain the rated value, wherein x≥2;

[0029] The capacitance characteristic deviation vector is obtained by subtracting the reference deviation vector from the total deviation vector.

[0030] Preferably, the step of obtaining a reference deviation vector according to reference historical data and a circuit simulation model comprises:

[0031] Extracting operating parameters from the benchmark historical data, and constructing the extracted operating parameters into an actual benchmark operating vector;

[0032] In the circuit simulation model, the properties of all components are set to rated values, simulation is performed to obtain operating parameters, and the operating parameters obtained by simulation are constructed into simulation benchmark operating vectors;

[0033] The base deviation vector is calculated using the following formula:

[0034] B=(RO-SO). / SO,

[0035] Wherein, B represents the benchmark deviation vector, RO represents the actual benchmark operation vector, SO represents the simulated benchmark operation vector, and . / represents the division operation of the corresponding elements of the vector;

[0036] The step of obtaining the total deviation vector according to the capacitance difference historical data and the circuit simulation model comprises:

[0037] Extracting respective operating parameters from the x capacitance difference historical data, constructing each extracted operating parameter into an actual capacitance deviation operating vector, and all actual capacitance deviation operating vectors constitute an actual capacitance set;

[0038] In the circuit simulation model, the properties of non-capacitor components are set to rated values, and the properties of capacitor components are set according to the properties in x capacitor difference historical data, x simulations are performed, x sets of simulation operation parameters are obtained, and each set of simulation operation parameters is constructed into a simulated capacitor deviation operation vector, and all simulated capacitor deviation operation vectors constitute a simulated capacitor set;

[0039] According to the actual capacitance set and the simulated capacitance set, the capacitance deviation vector set is obtained using the following formula:

[0040] D i =(Q i -F i ). / F i ,

[0041] Where D i represents the i-th element in the capacitance deviation vector set, Q i represents the ith element in the actual capacitor set, F i represents the i-th element in the simulated capacitor set; i represents the index, 1≤i≤x;

[0042] The total deviation vector is calculated using the following formula:

[0043]

[0044] Where Z represents the total deviation vector, W i represents the i-th weight value; W i Obtained through the following formula:

[0045]

[0046] In the formula, ||·|| represents the norm operation, D j Represents the jth element in the capacitance deviation vector set.

[0047] Preferably, the acquiring corresponding component data from a library of correspondences between operation standard vectors and component data according to the real-time operation vector comprises:

[0048] Calculate the cosine similarity between the real-time operation vector and the operation standard vector and each operation standard vector in the component data correspondence library;

[0049] According to the calculated cosine similarity, the running standard vector with the highest cosine similarity is selected;

[0050] The component data corresponding to the running standard vector with the highest cosine similarity is extracted as the final corresponding component data.

[0051] Preferably, obtaining the simulation operation vector according to the acquired component data and the circuit simulation model includes:

[0052] In the circuit simulation model, the properties of the non-capacitive components are set to rated values, and the properties of the capacitive components are set according to the properties in the acquired component data, and simulation is performed to obtain operating parameters, and the obtained operating parameters are constructed into a simulation operating vector;

[0053] The method of correcting the simulation operation vector using the capacitance characteristic deviation vector to obtain the corrected operation vector comprises:

[0054] Multiply each component in the capacitance characteristic deviation vector by the corresponding component in the simulation operation vector to obtain a preliminary correction value;

[0055] The preliminary correction value is added to the corresponding component in the simulation operation vector to obtain the correction operation vector.

[0056] Preferably, the analyzing whether there is a correlation between the correction operation vector and the real-time operation vector comprises:

[0057] Calculate the normalized Euclidean distance between the corrected running vector and the real-time running vector, and use the inverse of the calculated normalized Euclidean distance as the similarity score; compare the similarity score with the preset similarity threshold, if the similarity score is greater than or equal to the preset similarity threshold, it is determined that there is a correlation; otherwise, it is determined that there is no correlation.

[0058] The present invention also provides a metallized film capacitor capacity attenuation processing system, which is used to implement a metallized film capacitor capacity attenuation processing method, including:

[0059] A relationship library module is used to obtain historical data of the integrated circuit, wherein the historical data includes operating parameters and component data, and to establish a corresponding relationship library between operating standard vectors and component data based on the historical data;

[0060] A simulation deviation calculation module is used to establish a circuit simulation model according to the actual structure of the integrated circuit, and calculate the capacitance characteristic deviation vector based on the historical data and the output data of the circuit simulation model;

[0061] A real-time monitoring module, used to collect and monitor the real-time operating parameters of the integrated circuit, and when there are operating parameters in the real-time operating parameters that exceed a preset threshold, a real-time operating vector is constructed according to the real-time operating parameters;

[0062] A data matching module is used to obtain corresponding component data from a corresponding relationship library of operation standard vectors and component data according to the real-time operation vector;

[0063] A simulation correction module is used to obtain a simulation operation vector according to the acquired component data and the circuit simulation model; and to correct the simulation operation vector using the capacitance characteristic deviation vector to obtain a correction operation vector;

[0064] A correlation analysis module is used to analyze whether there is a correlation between the correction operation vector and the real-time operation vector;

[0065] If there is a correlation, the component data of capacitor type is extracted, and a capacitance analysis report is outputted according to the extracted component data;

[0066] If there is no correlation, it is determined that the problem is not caused by the capacitor and a corresponding report is generated.

[0067] The present invention provides a method and system for processing the capacity attenuation of a metallized film capacitor, which has the following features:

[0068] Beneficial effects:

[0069] By extracting relevant information from historical data. When an abnormality in real-time operating parameters is detected, the most similar historical state can be quickly matched. By combining historical data and circuit simulation models, the capacitor characteristic deviation vector is calculated. It reflects the impact of the capacitor on circuit performance under different states; by correcting the simulation results using the capacitor characteristic deviation vector, the error between the simulation and the actual situation is effectively reduced. The accuracy of the simulation-based fault diagnosis method is improved. By comparing the correlation between the corrected operating vector and the real-time operating vector, it is possible to intelligently determine whether the current abnormality is caused by the capacitor. When it is determined that the problem is caused by the capacitor, the specific faulty capacitor can be quickly located according to the numbering information in the component data, shortening the fault location time and improving maintenance efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0070] Figure 1 A schematic diagram of a process for treating a capacity attenuation of a metallized film capacitor according to the present invention;

[0071] Figure 2 The module schematic diagram of a metallized film capacitor capacity attenuation processing system of the present invention. DETAILED DESCRIPTION

[0072] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0073] Example 1

[0074] See also Figure 1 In this embodiment, a method for processing the capacity attenuation of a metallized film capacitor includes:

[0075] S1. Acquire historical data of the integrated circuit, wherein the historical data includes operating parameters and component data, and establish a corresponding relationship library between operating standard vectors and component data according to the historical data;

[0076] The component data includes number, type and attribute; the operating parameters include output voltage, efficiency, power factor and total harmonic distortion.

[0077] The establishing of a corresponding relationship library between operation vectors and component data according to historical data comprises:

[0078] Extract component data of capacitor type from historical data;

[0079] According to the extracted component data, historical data of capacitor type with the same number and attribute are grouped together;

[0080] For each set of historical data, the operating parameters corresponding to each piece of historical data are extracted, and the extracted operating parameters are normalized to obtain four normalized values, and the four normalized values ​​are used to form a corresponding standard vector;

[0081] For all standard vectors corresponding to each set of historical data, one of the standard vectors is obtained as the running standard vector according to the distance between the standard vectors, and the corresponding relationship between the component data in the set of historical data and the running standard vector is established;

[0082] The correspondence between the component data in each set of historical data and the operating standard vector is integrated to form a corresponding relationship library between the operating standard vector and the component data.

[0083] The step of obtaining one of the standard vectors as the running standard vector according to the distance between the standard vectors comprises:

[0084] For all standard vectors corresponding to each set of historical data, the sum of their Euclidean distances with all other standard vectors is calculated as the vector distance;

[0085] Set a distance threshold, mark the standard vector whose vector distance exceeds the distance threshold as an abnormal vector and exclude it;

[0086] For the remaining standard vectors, the vector distance is recalculated, and a standard vector with the smallest vector distance is selected as the running standard vector.

[0087] In this embodiment, first, historical data is obtained, and the historical data can be obtained in an experimental environment or in a real operating environment. These data include operating parameters (output voltage, efficiency, power factor, and total harmonic distortion) and component data (number, type, and corresponding attributes of each component). Among them, component types include capacitors, resistors, inductors, etc., and attributes correspond to component types, such as the capacitance of capacitors, the resistance of resistors, the inductance of inductors, etc.

[0088] Next, extract all component data of capacitor type from the historical data. Since the number of each component in an integrated circuit is usually greater than 1, such as there are usually multiple capacitors, the historical data usually contains information on multiple capacitors, and each component has its own number, such as the capacitor number can be dr001, dr002, etc. Group the historical data of capacitor type and all capacitors with the same number and attributes into one group. For example, if there are multiple historical data in which the capacitance of capacitor 001 is 0.5μF, the capacitance of capacitor 002 is 0.3μF, and the numbers and attributes of all other capacitors are exactly the same, then these historical data will be grouped into the same group.

[0089] For each set of historical data, the operating parameters corresponding to each piece of historical data are extracted, and the extracted operating parameters are normalized to obtain four normalized values, and the four normalized values ​​are used to form a corresponding standard vector.

[0090] Then, for all standard vectors corresponding to each set of historical data, the sum of the Euclidean distances between each vector and all other vectors is calculated as the vector distance of the vector. An appropriate distance threshold is set, and standard vectors whose vector distance exceeds the threshold are marked as abnormal vectors and excluded. For the remaining standard vectors, the vector distance is recalculated, and the standard vector with the smallest vector distance is selected as the running standard vector of the group.

[0091] Next, the correspondence between the component data in the historical data set and the selected operation standard vector is established. The above process is repeated for all groups, and finally the correspondence between the component data in each historical data set and the operation standard vector is integrated to form a complete operation standard vector and component data correspondence library.

[0092] S2. Establish a circuit simulation model according to the actual structure of the integrated circuit, and calculate the capacitance characteristic deviation vector based on the historical data and the output data of the circuit simulation model;

[0093] The step of calculating the capacitance characteristic deviation vector based on the historical data and the output data of the circuit simulation model comprises:

[0094] Selecting a benchmark historical data from the historical data, and obtaining a benchmark deviation vector according to the benchmark historical data and the circuit simulation model; wherein the benchmark historical data is: historical data in which all component attributes in the component data are rated values;

[0095] Select x capacitance difference historical data from the historical data, and obtain a total deviation vector according to the capacitance difference historical data and the circuit simulation model; wherein the capacitance difference historical data is: historical data in which the capacitance attribute in the component data deviates from the rated value and other component attributes maintain the rated value, wherein x≥2;

[0096] The capacitance characteristic deviation vector is obtained by subtracting the reference deviation vector from the total deviation vector.

[0097] The step of obtaining a reference deviation vector according to reference historical data and a circuit simulation model comprises:

[0098] Extracting operating parameters from the benchmark historical data, and constructing the extracted operating parameters into an actual benchmark operating vector;

[0099] In the circuit simulation model, the properties of all components are set to rated values, simulation is performed to obtain operating parameters, and the operating parameters obtained by simulation are constructed into simulation benchmark operating vectors;

[0100] The base deviation vector is calculated using the following formula:

[0101] B=(RO-SO). / SO,

[0102] Wherein, B represents the benchmark deviation vector, RO represents the actual benchmark operation vector, SO represents the simulated benchmark operation vector, and . / represents the division operation of the corresponding elements of the vector;

[0103] The step of obtaining the total deviation vector according to the capacitance difference historical data and the circuit simulation model comprises:

[0104] Extracting respective operating parameters from the x capacitance difference historical data, constructing each extracted operating parameter into an actual capacitance deviation operating vector, and all actual capacitance deviation operating vectors constitute an actual capacitance set;

[0105] In the circuit simulation model, the properties of non-capacitor components are set to rated values, and the properties of capacitor components are set according to the properties in x capacitor difference historical data, x simulations are performed, x sets of simulation operation parameters are obtained, and each set of simulation operation parameters is constructed into a simulated capacitor deviation operation vector, and all simulated capacitor deviation operation vectors constitute a simulated capacitor set;

[0106] According to the actual capacitance set and the simulated capacitance set, the capacitance deviation vector set is obtained using the following formula:

[0107] D i =(Q i -F i ). / F i ,

[0108] Where D i represents the i-th element in the capacitance deviation vector set, Q i represents the ith element in the actual capacitor set, F i represents the i-th element in the simulated capacitor set; i represents the index, 1≤i≤x;

[0109] The total deviation vector is calculated using the following formula:

[0110]

[0111] Where Z represents the total deviation vector, W i represents the i-th weight value; W i Obtained through the following formula:

[0112]

[0113] In the formula, ||·|| represents the norm operation, D j Represents the jth element in the capacitance deviation vector set.

[0114] In this embodiment, firstly, a circuit simulation model can be established according to the actual structure of the integrated circuit using circuit simulation software. Next, the capacitance characteristic deviation vector is calculated based on the historical data and the output data of the circuit simulation model. The calculation process is as follows:

[0115] First, select a benchmark historical data from the historical data. The properties of all components in this data are rated values. For example, if there is a capacitor with a rated capacitance of 100μF in the circuit, then in this benchmark historical data, the capacitance of this capacitor is 100μF. Then, calculate the benchmark deviation vector. Extract the actual operating parameters (output voltage, efficiency, power factor and total harmonic distortion) in the benchmark historical data to construct an actual benchmark operating vector. Set all components to rated values ​​in the circuit simulation model, perform simulation, and obtain the simulated benchmark operating vector. Use the actual benchmark operating vector to divide the simulated benchmark operating vector to obtain the benchmark deviation vector. This vector reflects the inherent error between the simulation model and the actual circuit.

[0116] Next, select n capacitance difference historical data from the historical data. In these data, the properties of the capacitor deviate from the rated value, while the properties of other components remain at the rated value. For example, select a data in which the actual value of a 100μF capacitor becomes 95μF, while other components remain at the rated value. For each capacitance difference historical data, extract its actual operating parameters to construct an actual capacitance deviation operating vector, and all these vectors constitute an actual capacitance set. Set the corresponding capacitance value in the simulation model, perform n simulations, and obtain the simulated capacitance deviation operating vector to form a simulated capacitance set.

[0117] The actual capacitance set is divided by the simulated capacitance set to obtain a capacitance deviation vector set. The norm of each capacitance deviation vector is calculated, and the inverse of the norm is used as the weight after normalization. All capacitance deviation vectors are weighted and summed to obtain the total deviation vector.

[0118] Finally, the reference deviation vector is subtracted from the total deviation vector to obtain the capacitance characteristic deviation vector. This vector reflects the specific error caused by the deviation of the capacitance value from the rated value. The capacitance characteristic deviation vector is used to correct the error between the simulation result and the actual result when the capacitance is not rated. The application of this deviation vector improves the accuracy of the simulation of the actual behavior of the circuit and provides a reliable data basis for the subsequent analysis of capacitance problems in integrated circuits.

[0119] S3, collecting and monitoring the real-time operating parameters of the integrated circuit, and when there are operating parameters in the real-time operating parameters that exceed the preset threshold, constructing a real-time operating vector according to the real-time operating parameters;

[0120] S4, acquiring corresponding component data from a database of corresponding relationships between operation standard vectors and component data according to the real-time operation vector;

[0121] The step of acquiring corresponding component data from a database of corresponding relationships between operation standard vectors and component data according to the real-time operation vector comprises:

[0122] Calculate the cosine similarity between the real-time operation vector and the operation standard vector and each operation standard vector in the component data correspondence library;

[0123] According to the calculated cosine similarity, the running standard vector with the highest cosine similarity is selected;

[0124] The component data corresponding to the running standard vector with the highest cosine similarity is extracted as the final corresponding component data.

[0125] In this embodiment, the real-time operating parameters of the integrated circuit are continuously collected and monitored. These parameters include output voltage, efficiency, power factor and total harmonic distortion. The normal operating threshold range of each parameter is preset. When any real-time operating parameter is detected to exceed its preset threshold, it indicates that the integrated circuit may be faulty, so the following subsequent processing flow will be immediately triggered:

[0126] First, the current operating parameters are constructed together into a real-time operating vector. Next, this real-time operating vector is used to retrieve matching component data from the previously established operating standard vector and component data correspondence library. This process uses the cosine similarity calculation method. After the calculation is completed, the operating standard vector with the highest cosine similarity is selected. This vector represents the historical operating state that is most similar to the current real-time state. Then, the component data associated with this most similar operating standard vector is extracted, which is the most likely component data in the current state.

[0127] S5. Obtain a simulation operation vector according to the acquired component data and the circuit simulation model; and correct the simulation operation vector using the capacitance characteristic deviation vector to obtain a corrected operation vector;

[0128] The step of obtaining the simulation operation vector according to the acquired component data and the circuit simulation model includes:

[0129] In the circuit simulation model, the properties of the non-capacitive components are set to rated values, and the properties of the capacitive components are set according to the properties in the acquired component data, and simulation is performed to obtain operating parameters, and the obtained operating parameters are constructed into a simulation operating vector;

[0130] The method of correcting the simulation operation vector using the capacitance characteristic deviation vector to obtain the corrected operation vector comprises:

[0131] Multiply each component in the capacitance characteristic deviation vector by the corresponding component in the simulation operation vector to obtain a preliminary correction value;

[0132] The preliminary correction value is added to the corresponding component in the simulation operation vector to obtain the correction operation vector.

[0133] In this embodiment, the previously acquired component data and the established circuit simulation model are used to generate simulation operation vectors. The purpose of this process is to simulate the circuit state in which the capacitor may be abnormal while other components remain normal. The specific process is as follows:

[0134] First, set the component parameters in the circuit simulation model. For non-capacitive components, set their properties to rated values ​​to simulate these components in normal state. For capacitive components, set them precisely according to the properties in the previously acquired component data. These properties may deviate from the rated values, reflecting potential abnormal conditions. After the settings are completed, run the simulation to obtain a set of operating parameters, and construct these simulated operating parameters into a simulation operation vector. This vector reflects the theoretical operating state of the circuit when the capacitor may be abnormal but other components are normal. Since the simulation results often deviate from the actual situation. In order to improve the accuracy of the simulation, the capacitance characteristic deviation vector calculated previously is used to correct the simulation operation vector.

[0135] The correction process is as follows: First, each component in the capacitor characteristic deviation vector is multiplied by the corresponding component in the simulation operation vector to obtain a preliminary correction value. This step takes into account the degree of influence of the change in capacitor characteristics on each operating parameter. Next, these preliminary correction values ​​are added to the corresponding components in the simulation operation vector to obtain the final correction operation vector. This correction operation vector combines the capacitor characteristic deviations observed in the simulation results and historical data, so it can more accurately reflect the operating state of the actual circuit under abnormal capacitor conditions.

[0136] S6. analyzing whether there is a correlation between the correction operation vector and the real-time operation vector;

[0137] If there is a correlation, the component data of capacitor type is extracted, and a capacitance analysis report is outputted according to the extracted component data;

[0138] If there is no correlation, it is determined that the problem is not caused by the capacitor and a corresponding report is generated.

[0139] The analyzing whether there is a correlation between the correction operation vector and the real-time operation vector comprises:

[0140] Calculate the normalized Euclidean distance between the corrected running vector and the real-time running vector, and use the inverse of the calculated normalized Euclidean distance as the similarity score; compare the similarity score with the preset similarity threshold, if the similarity score is greater than or equal to the preset similarity threshold, it is determined that there is a correlation; otherwise, it is determined that there is no correlation.

[0141] In this embodiment, the correlation between the correction operation vector and the real-time operation vector is further analyzed to determine whether the current operation parameter abnormality is caused by the capacitor. First, the normalized Euclidean distance between the correction operation vector and the real-time operation vector is calculated, and the reciprocal of the distance is used as the similarity score. This method can effectively quantify the similarity between the two vectors. The obtained similarity score is compared with a preset similarity threshold. If the similarity score is greater than or equal to the preset threshold, it is determined that the two vectors are correlated; otherwise, it is determined that there is no correlation.

[0142] When a correlation is determined, this indicates that the currently observed abnormal operating parameters are likely to be caused by a capacitor problem. In this case, the capacitor component data previously used for simulation is extracted, and this data is usually able to better reflect the actual status of the capacitor in the current circuit. A detailed capacitor analysis report is generated based on this data. The report includes the current estimated capacitance of each relevant capacitor, its rated capacitance, and the difference between the two. If the difference between the actual value of a capacitor and the rated value exceeds a predetermined threshold, the report will recommend replacing the capacitor or performing a more detailed inspection. Since each capacitor has a unique number, the report can accurately locate the specific capacitor that needs attention, greatly improving the efficiency of maintenance and repair. For example, the report may indicate that the current estimated capacitance of the capacitor numbered dr001 is 95μF, the rated capacitance is 100μF, and the deviation rate is 5%. Further inspection is recommended. Or the current estimated capacitance of the capacitor numbered dr002 is 80μF, the rated capacitance is 100μF, and the deviation rate is 20%. It is recommended to replace this capacitor.

[0143] Conversely, if it is determined that there is no correlation between the corrected operating vector and the real-time operating vector, this indicates that the currently observed operating parameter anomaly may not be caused by a capacitor problem. In this case, a different report is generated indicating that the problem may be with another type of component.

[0144] This method can quickly and accurately guide maintenance personnel to focus on the components that are most likely to have problems, whether they are capacitors or other types of components. This greatly improves the efficiency of fault diagnosis and repair, reduces unnecessary inspection time, and improves the accuracy of maintenance.

[0145] Example 2

[0146] See also Figure 2 The present invention provides a metallized film capacitor capacity attenuation processing system, which is used to implement a metallized film capacitor capacity attenuation processing method, including:

[0147] A relationship library module is used to obtain historical data of the integrated circuit, wherein the historical data includes operating parameters and component data, and to establish a corresponding relationship library between operating standard vectors and component data based on the historical data;

[0148] A simulation deviation calculation module is used to establish a circuit simulation model according to the actual structure of the integrated circuit, and calculate the capacitance characteristic deviation vector based on the historical data and the output data of the circuit simulation model;

[0149] A real-time monitoring module, used to collect and monitor the real-time operating parameters of the integrated circuit, and when there are operating parameters in the real-time operating parameters that exceed a preset threshold, a real-time operating vector is constructed according to the real-time operating parameters;

[0150] A data matching module is used to obtain corresponding component data from a corresponding relationship library of operation standard vectors and component data according to the real-time operation vector;

[0151] A simulation correction module is used to obtain a simulation operation vector according to the acquired component data and the circuit simulation model; and to correct the simulation operation vector using the capacitance characteristic deviation vector to obtain a correction operation vector;

[0152] A correlation analysis module is used to analyze whether there is a correlation between the correction operation vector and the real-time operation vector;

[0153] If there is a correlation, the component data of capacitor type is extracted, and a capacitance analysis report is outputted according to the extracted component data;

[0154] If there is no correlation, it is determined that the problem is not caused by the capacitor and a corresponding report is generated.

[0155] In the several embodiments provided by the present invention, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic, for example, the division of the units is only one, and there may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0156] The above description is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

[0157] Finally: The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for processing capacity attenuation of a metallized film capacitor, characterized in that: include: Acquire historical data of the integrated circuit, the historical data including operating parameters and component data, and establish a corresponding relationship library between operating standard vectors and component data based on the historical data; A circuit simulation model is established according to the actual structure of the integrated circuit, and a capacitance characteristic deviation vector is calculated based on historical data and output data of the circuit simulation model; Collecting and monitoring real-time operating parameters of the integrated circuit, and when there are operating parameters in the real-time operating parameters that exceed a preset threshold, constructing a real-time operating vector according to the real-time operating parameters; Obtain corresponding component data from a corresponding relationship library between operating standard vectors and component data according to the real-time operating vector; According to the acquired component data and the circuit simulation model, a simulation operation vector is obtained; the simulation operation vector is corrected using the capacitance characteristic deviation vector to obtain a corrected operation vector; Analyze whether there is a correlation between the correction operation vector and the real-time operation vector; If there is a correlation, the component data of capacitor type is extracted, and a capacitance analysis report is outputted according to the extracted component data; If there is no correlation, it is determined that the problem is not caused by the capacitor and a corresponding report is generated.

2. A method for processing capacity attenuation of a metallized film capacitor according to claim 1, characterized in that: The component data includes number, type and attribute; the operating parameters include output voltage, efficiency, power factor and total harmonic distortion.

3. A method for processing capacity attenuation of a metallized film capacitor according to claim 2, characterized in that: The establishing of a corresponding relationship library between operation vectors and component data according to historical data comprises: Extract component data of capacitor type from historical data; According to the extracted component data, historical data of capacitor type with the same number and attribute are grouped together; For each set of historical data, the operating parameters corresponding to each piece of historical data are extracted, and the extracted operating parameters are normalized to obtain four normalized values, and the four normalized values ​​are used to form a corresponding standard vector; For all standard vectors corresponding to each set of historical data, one of the standard vectors is obtained as the running standard vector according to the distance between the standard vectors, and the corresponding relationship between the component data in the set of historical data and the running standard vector is established; The correspondence between the component data in each set of historical data and the operating standard vector is integrated to form a corresponding relationship library between the operating standard vector and the component data.

4. A method for processing capacity attenuation of a metallized film capacitor according to claim 3, characterized in that: The step of obtaining one of the standard vectors as the running standard vector according to the distance between the standard vectors comprises: For all standard vectors corresponding to each set of historical data, the sum of their Euclidean distances with all other standard vectors is calculated as the vector distance; Set a distance threshold, mark the standard vector whose vector distance exceeds the distance threshold as an abnormal vector and exclude it; For the remaining standard vectors, the vector distance is recalculated, and a standard vector with the smallest vector distance is selected as the running standard vector.

5. The method for processing capacity attenuation of a metallized film capacitor according to claim 1, characterized in that: The step of calculating the capacitance characteristic deviation vector based on the historical data and the output data of the circuit simulation model comprises: Selecting a benchmark historical data from the historical data, and obtaining a benchmark deviation vector according to the benchmark historical data and the circuit simulation model; wherein the benchmark historical data is: historical data in which all component attributes in the component data are rated values; Select x capacitance difference historical data from the historical data, and obtain a total deviation vector according to the capacitance difference historical data and the circuit simulation model; wherein the capacitance difference historical data is: historical data in which the capacitance attribute in the component data deviates from the rated value and other component attributes maintain the rated value, wherein x≥2; The capacitance characteristic deviation vector is obtained by subtracting the reference deviation vector from the total deviation vector.

6. A method for processing capacity attenuation of a metallized film capacitor according to claim 5, characterized in that: The step of obtaining a reference deviation vector according to reference historical data and a circuit simulation model comprises: Extracting operating parameters from the benchmark historical data, and constructing the extracted operating parameters into an actual benchmark operating vector; In the circuit simulation model, the properties of all components are set to rated values, simulation is performed to obtain operating parameters, and the operating parameters obtained by simulation are constructed into simulation benchmark operating vectors; The base deviation vector is calculated using the following formula: B=(RO-SO). / SO, Wherein, B represents the benchmark deviation vector, RO represents the actual benchmark operation vector, SO represents the simulated benchmark operation vector, and . / represents the division operation of the corresponding elements of the vector; The step of obtaining the total deviation vector according to the capacitance difference historical data and the circuit simulation model comprises: Extracting respective operating parameters from the x capacitance difference historical data, constructing each extracted operating parameter into an actual capacitance deviation operating vector, and all actual capacitance deviation operating vectors constitute an actual capacitance set; In the circuit simulation model, the properties of non-capacitor components are set to rated values, and the properties of capacitor components are set according to the properties in x capacitor difference historical data, x simulations are performed, x sets of simulation operation parameters are obtained, and each set of simulation operation parameters is constructed into a simulated capacitor deviation operation vector, and all simulated capacitor deviation operation vectors constitute a simulated capacitor set; According to the actual capacitance set and the simulated capacitance set, the capacitance deviation vector set is obtained using the following formula: D i =(Q i -F i ). / F i , Where D i represents the i-th element in the capacitance deviation vector set, Q i represents the i-th element in the actual capacitor set, F i represents the i-th element in the simulated capacitor set; i represents the index, 1≤i≤x; The total deviation vector is calculated using the following formula: Where Z represents the total deviation vector, W i represents the i-th weight value; W i Obtained through the following formula: In the formula, ||·|| represents the norm operation, D j Represents the jth element in the capacitance deviation vector set.

7. A method for processing capacity attenuation of a metallized film capacitor according to claim 6, characterized in that: The step of acquiring corresponding component data from a database of corresponding relationships between operation standard vectors and component data according to the real-time operation vector comprises: Calculate the cosine similarity between the real-time operation vector and the operation standard vector and each operation standard vector in the component data correspondence library; According to the calculated cosine similarity, the running standard vector with the highest cosine similarity is selected; The component data corresponding to the running standard vector with the highest cosine similarity is extracted as the final corresponding component data.

8. A method for processing capacity attenuation of a metallized film capacitor according to claim 7, characterized in that: The step of obtaining the simulation operation vector according to the acquired component data and the circuit simulation model includes: In the circuit simulation model, the properties of the non-capacitive components are set to rated values, and the properties of the capacitive components are set according to the properties in the acquired component data, and simulation is performed to obtain operating parameters, and the obtained operating parameters are constructed into a simulation operating vector; The method of correcting the simulation operation vector using the capacitance characteristic deviation vector to obtain the corrected operation vector comprises: Multiply each component in the capacitance characteristic deviation vector by the corresponding component in the simulation operation vector to obtain a preliminary correction value; The preliminary correction value is added to the corresponding component in the simulation operation vector to obtain the correction operation vector.

9. A method for processing capacity attenuation of a metallized film capacitor according to claim 8, characterized in that: The analyzing whether there is a correlation between the correction operation vector and the real-time operation vector comprises: Calculate the normalized Euclidean distance between the corrected running vector and the real-time running vector, and use the inverse of the calculated normalized Euclidean distance as the similarity score; compare the similarity score with the preset similarity threshold, if the similarity score is greater than or equal to the preset similarity threshold, it is determined that there is a correlation; otherwise, it is determined that there is no correlation.

10. A metallized film capacitor capacity attenuation processing system, used to implement a metallized film capacitor capacity attenuation processing method as claimed in any one of claims 1 to 9, characterized in that: include: A relationship library module is used to obtain historical data of the integrated circuit, wherein the historical data includes operating parameters and component data, and to establish a corresponding relationship library between operating standard vectors and component data based on the historical data; A simulation deviation calculation module is used to establish a circuit simulation model according to the actual structure of the integrated circuit, and calculate the capacitance characteristic deviation vector based on the historical data and the output data of the circuit simulation model; A real-time monitoring module, used to collect and monitor the real-time operating parameters of the integrated circuit, and when there are operating parameters in the real-time operating parameters that exceed a preset threshold, a real-time operating vector is constructed according to the real-time operating parameters; A data matching module is used to obtain corresponding component data from a corresponding relationship library of operation standard vectors and component data according to the real-time operation vector; A simulation correction module is used to obtain a simulation operation vector according to the acquired component data and the circuit simulation model; and to correct the simulation operation vector using the capacitance characteristic deviation vector to obtain a correction operation vector; A correlation analysis module is used to analyze whether there is a correlation between the correction operation vector and the real-time operation vector; If there is a correlation, the component data of capacitor type is extracted, and a capacitance analysis report is outputted according to the extracted component data; If there is no correlation, it is determined that the problem is not caused by the capacitor and a corresponding report is generated.

Images