Method and device for detecting thermal field component of crystal pulling furnace

Abstract

The embodiment of the invention discloses a detection method and device for a thermal field component of a crystal pulling furnace, the detection method for the thermal field component of the crystal pulling furnace can comprise a power supply module, a data acquisition module and a controller, the power supply module is used for providing constant voltage; the data acquisition module is connected in series with the power supply module and the at least one thermal field component, and is used for acquiring information of current flowing through the thermal field component under constant voltage; the controller is used for judging the state of the thermal field component according to the current information.

Description

Technical Field

[0001] The disclosed embodiments relate to the field of semiconductor processing technology, and in particular to a method and device for detecting thermal field components of a crystal pulling furnace. Background Art

[0002] In industrial and power systems, timely detection of equipment failures is crucial to ensure stable system operation. With the development of technology, the demand for real-time monitoring of equipment health and fault warning is growing. Especially in the process of crystal rod production, due to the long continuous operation time of equipment production, high temperature and vacuum requirements, and great influence of airflow and impurities, the stable operation of thermal field components is particularly important. Abnormal conditions will lead to abnormal quality of crystal rods, and in severe cases, even lead to product scrapping. Therefore, real-time monitoring and fault diagnosis technology of thermal field components has important practical significance.

[0003] At present, the main way to observe whether there are abnormalities in thermal field components is to rely on manual observation. This method cannot monitor the changes of thermal field components in real time during the production process, and the influence of human factors leads to large differences in judgment. It is easy to cause production interruptions and safety accidents due to equipment failure. Summary of the invention

[0004] In view of this, the embodiments of the present disclosure are intended to provide a method and device for detecting thermal field components of a crystal pulling furnace, which can solve the technical problem of difficulty in detecting thermal field components in the prior art.

[0005] The technical solution of the embodiment of the present disclosure is implemented as follows: In a first aspect, an embodiment of the present disclosure provides a detection device for a thermal field component of a crystal pulling furnace, comprising: A power supply module, used for providing a constant voltage; A data acquisition module, used for acquiring current information flowing through the thermal field component under the constant voltage; A controller is used to determine the state of the thermal field component according to the current information.

[0006] In some examples, the state of the thermal field component includes a normal state and a fault state; The controller is used for determining that the state of the thermal field component is in a fault state when the current information is greater than a set current upper limit value.

[0007] In some examples, the controller is used to control the crystal pulling furnace to stop working and send an alarm signal when the state of the thermal field component is in a fault state.

[0008] In some examples, when the data acquisition module is connected in series with a plurality of thermal field components, each of the thermal field components corresponds to a set current upper limit value; The controller is used for determining the states of the plurality of thermal field components according to the current information and the set current upper limit value corresponding to each of the thermal field components.

[0009] In some examples, the state of the thermal field component includes a normal state and a fault state; The controller is used for determining that the thermal field component is in a fault state when a change value of the current information within a preset time is greater than a preset threshold.

[0010] In some examples, the controller is used to obtain historical current information of each thermal field component within a preset time, and predict the time when the current information is greater than the set current upper limit value according to the current information and the set current upper limit value corresponding to the thermal field component.

[0011] In a second aspect, the present disclosure provides a method for detecting a thermal field component of a crystal pulling furnace, comprising: Under the condition that a constant voltage is applied across the thermal field component, obtaining current information flowing through the thermal field component; A state of the thermal field component is determined based on the current information.

[0012] In some examples, the state of the thermal field component includes a normal state and a fault state; Determining the state of the thermal field component according to the current information includes: When the current information is greater than a set current upper limit value, it is determined that the state of the thermal field component is in a fault state.

[0013] In some examples, when a plurality of thermal field components are connected in series between the constant voltages, each of the thermal field components corresponds to a set current upper limit value; Determining the state of the thermal field component according to the current information includes: The states of the plurality of thermal field components are determined according to the current information and the set current upper limit values ​​corresponding to the respective thermal field components.

[0014] In some examples, the state of the thermal field component includes a normal state and a fault state; Determining the state of the thermal field component according to the current information includes: When a change value of the current information within a preset time is greater than a preset threshold, it is determined that the thermal field component is in a fault state.

[0015] In some examples, the method further includes: Acquire historical current information of each thermal field component within a preset time; The time when the current information is greater than the set current upper limit value is predicted based on the current information and the set current upper limit value corresponding to the thermal field component.

[0016] The disclosed embodiments provide a method and device for detecting the thermal field components of a crystal pulling furnace; by obtaining the current information flowing through the thermal field components under the constant voltage and by real-time monitoring of the current changes, the abnormal conditions of the thermal field components can be quickly identified, thereby improving the accuracy and response speed of fault detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 The present invention is a schematic side cross-sectional view of the structure of a crystal pulling furnace applicable to a method for manufacturing single crystal silicon.

[0018] Figure 2 A schematic diagram of a detection device for thermal field components of a crystal pulling furnace provided in an embodiment of the present disclosure.

[0019] Figure 3 A schematic diagram of another detection device for thermal field components of a crystal pulling furnace provided in an embodiment of the present disclosure.

[0020] Figure 4 A schematic diagram of a detection device for thermal field components of another crystal pulling furnace provided in an embodiment of the present disclosure.

[0021] Figure 5 A schematic diagram of a detection device for thermal field components of another crystal pulling furnace provided in an embodiment of the present disclosure.

[0022] Figure 6 A schematic diagram of a detection device for thermal field components of a crystal pulling furnace provided in another embodiment of the present disclosure.

[0023] Figure 7 A schematic diagram of an alarm line provided in an embodiment of the present disclosure.

[0024] Figure 8 A schematic diagram of a wave line provided in an embodiment of the present disclosure.

[0025] Fig. 9 A schematic diagram of the connection between a detection device for a thermal field component of a crystal pulling furnace and a main control system provided in an embodiment of the present disclosure.

[0026] Fig.10 A flow chart of a method for detecting thermal field components of a crystal pulling furnace provided in an embodiment of the present disclosure.

[0027] The above drawings show clear embodiments of the present disclosure, which will be described in more detail below. These drawings and text descriptions are not intended to limit the scope of the present disclosure in any way, but to illustrate the concepts of the present disclosure to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0028] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that the disclosure will be more comprehensive and complete and to fully convey the concepts of the example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0029] In addition, the accompanying drawings are only schematic illustrations of the present disclosure and are not necessarily drawn to scale. The same reference numerals in the figures represent the same or similar parts, and their repeated description will be omitted. Some of the block diagrams shown in the accompanying drawings are functional entities and do not necessarily correspond to physically or logically independent entities. These functional entities can be implemented in software form, or implemented in one or more hardware modules or integrated circuits, or implemented in different networks and / or processor devices and / or microcontroller devices.

[0030] See also Figure 1 , which shows a side cross-sectional view of a structure example of a crystal pulling furnace that can be applied to the single crystal silicon manufacturing method proposed in the present disclosure. Figure 1 As shown, the crystal pulling furnace 1 includes a chamber 10, a quartz crucible 11 carrying a raw material melt 2 in the chamber 10, a graphite base 12 for holding the quartz crucible 11, a rotating shaft 13 supporting the base 12, an axis driving mechanism 14 for driving the rotating shaft 13 to rotate and rise and fall, a heater 15 arranged around the base 12, a heat insulating material 16 arranged along the inner surface of the chamber 10 on the outer side of the heater 15, a guide tube 17 arranged above the quartz crucible 11, a single crystal pulling wire 18 arranged above the quartz crucible 11 and coaxially with the rotating shaft 13, and a wire winding mechanism 19 arranged above the chamber 10.

[0031] Continue to see Figure 1 The crystal pulling furnace 1 also includes a magnetic field applying device 21 arranged outside the chamber 10, a CCD camera 22 for photographing the inside of the chamber 10, an image processing unit 23 for processing the image photographed by the CCD camera 22, and a control unit 24 for controlling the shaft driving mechanism 14, the heater 15 and the wire winding mechanism 19 according to the output of the image processing unit 23.

[0032] In detail, the chamber 10 is composed of a main chamber 10a and a slender cylindrical crystal pulling chamber 10b connected to the upper opening of the main chamber 10a, and a quartz crucible 11, a susceptor 12, a heater 15 and a guide tube 17 are arranged in the main chamber 10a. A gas inlet 10c for introducing an inert gas such as argon, i.e., a purge gas, into the chamber 10 is provided at the upper part of the crystal pulling chamber 10b, and a gas outlet 10d for discharging the inert gas is provided at the bottom of the main chamber 10a. The inert gas is introduced into the chamber 10 from the gas inlet 10c, and the introduction amount can be controlled by a valve. In addition, the inert gas in the closed chamber 10 is discharged from the gas outlet 10d to the outside of the chamber 10, so that the SiO gas or CO gas generated in the chamber 10 can be recovered and the chamber 10 can be kept clean. In some examples, although not shown, a vacuum pump is connected to the gas outlet 10 d via a pipe, and the vacuum pump sucks the inert gas in the chamber 10 while controlling its flow rate through a valve, so that the chamber 10 is kept in a constant reduced pressure state.

[0033] An observation window 10e is provided at the upper part of the main chamber 10a, and the growth status of the single crystal silicon 3, that is, the solid-liquid interface, can be observed from the observation window 10e. In some examples, the CCD camera 22 is provided outside the observation window 10e. In the single crystal pulling process, the CCD camera 22 takes an image of the boundary between the single crystal silicon 3 and the raw material melt 2 observed from the observation window 10e through the opening of the guide tube 17. The CCD camera 22 is connected to the image processing unit 23, and the photographic image is processed by the image processing unit 23, and the processing result is used in the control unit 24 to control the crystal pulling conditions.

[0034] The quartz crucible 11 is generally a container made of quartz glass having a cylindrical side wall and a curved bottom. The susceptor 12 is in close contact with the outer surface of the quartz crucible 11 to surround the quartz crucible 11 in order to maintain the shape of the quartz crucible 11 softened by heating. In some examples, the quartz crucible 11 and the susceptor 12 are configured as a double-structured crucible that supports the raw material melt 2 in the chamber 10.

[0035] The susceptor 12 is fixed to the upper end of a rotating shaft 13 extending in the vertical direction. In addition, the lower end of the rotating shaft 13 passes through the center of the bottom of the chamber 10 and is connected to a shaft driving mechanism 14 provided outside the chamber 10. The susceptor 12, the rotating shaft 13, and the shaft driving mechanism 14 constitute a rotating mechanism and a lifting mechanism of the quartz crucible 11.

[0036] The heater 15 melts the silicon raw material and the dopant filled in the quartz crucible 11 to form the raw material melt 2, and maintains the raw material melt 2 in a molten state. In some examples, the heater 15 is a carbon resistance heating heater, and is a substantially cylindrical member provided so as to surround the entire circumference of the quartz crucible 11 in the susceptor 12. In addition, the outer side of the heater 15 is surrounded by a heat insulating material 16, thereby improving the heat preservation in the chamber 10.

[0037] The guide tube 17 can suppress the temperature variation of the raw material melt 2 and form an appropriate hot zone near the solid-liquid interface. In some examples, the guide tube 17 is a cylindrical member made of graphite that covers the upper region of the raw material melt 2 except for the pulling path of the single crystal silicon 3 .

[0038] A circular opening larger than the diameter of the single crystal silicon 3 is formed at the center of the lower end of the guide tube 17 to ensure the pulling path of the single crystal silicon 3. As shown in the figure, the single crystal silicon 3 is pulled upward through the opening of the guide tube 17. The diameter of the opening of the guide tube 17 is smaller than the caliber of the quartz crucible 11, and the lower end of the guide tube 17 is located inside the quartz crucible 11. Therefore, even if the upper end of the edge ring of the quartz crucible 11 is raised to a position higher than the lower end of the guide tube 17, the guide tube 17 will not interfere with the quartz crucible 11.

[0039] While the amount of the melt in the quartz crucible 11 decreases as the single crystal silicon 3 grows, the quartz crucible 11 is lifted so that the gap between the melt surface and the guide tube 17 becomes constant, thereby suppressing the temperature fluctuation of the raw material melt 2, and making the flow rate of the gas flowing near the melt surface constant, thereby controlling the evaporation amount of SiO gas from the raw material melt 2. As a result, the stability of the crystal defect distribution, oxygen concentration distribution, resistivity distribution, etc. in the pulling axis direction of the single crystal can be improved.

[0040] A wire 18, which is a pulling axis of the single crystal silicon 3, and a wire winding mechanism 19 for winding the wire 18 are provided above the quartz crucible 11. The wire winding mechanism 19 has the function of rotating the single crystal together with the wire 18. The wire winding mechanism 19 is arranged above the crystal pulling chamber 10b, and the wire 18 extends downward from the wire winding mechanism 19 through the crystal pulling chamber 10b, and the front end of the wire 18 reaches the internal space of the main chamber 10a. Figure 1 3 shows a state where a silicon single crystal 3 is suspended by a wire 18 during growth. When pulling a single crystal, a seed crystal is immersed in a raw material melt 2 and the wire 18 is slowly pulled while rotating the quartz crucible 11 and the seed crystal, so that a single crystal grows.

[0041] In the production process, thermal field components are key components in the single crystal silicon manufacturing process, and they directly participate in or affect the temperature control and maintenance during the crystal growth process. In the crystal pulling process, the quartz crucible 11, the base 12, the rotating shaft 13, the heater 15, the heat insulating material 16, the guide tube 17 arranged above the quartz crucible 11, the single crystal pulling wire 18 arranged above the quartz crucible 11 and coaxially with the rotating shaft 13, and the graphite parts and molybdenum parts arranged in the crystal pulling furnace can be used as thermal field components.

[0042] In the manufacturing process of single crystal silicon, the stability and precise control of thermal field components are crucial to the quality of crystal growth. In current technology, the monitoring and control of thermal field components mainly rely on manual observation and empirical judgment. Manual observation cannot achieve real-time monitoring of the status of thermal field components, resulting in the inability to detect abnormal conditions in time, which may miss the best time for fault prevention. Due to the limitations of manual control, the temperature control of thermal field components may not be precise enough, affecting the uniformity and quality of crystal growth. In the absence of accurate monitoring data, fault diagnosis mainly relies on post-analysis, making it difficult to achieve early diagnosis and prevention of faults. Due to the lack of real-time feedback on the status of thermal field components, it is impossible to optimize energy consumption and improve production efficiency. The inability to predict and repair potential faults in a timely manner may lead to increased equipment downtime and higher maintenance costs.

[0043] Based on this, the present disclosure first provides a detection device for the thermal field components of a crystal pulling furnace, which is used to detect the conductive components in the thermal field components. Since the conductive thermal field components will be worn after being used for a long time, their impedance will decrease, which will cause the current flowing through the thermal field components to increase. Based on this, referring to Figure 2 The detection device of the thermal field component of the crystal pulling furnace disclosed in the present invention may include a power supply module 4, a data acquisition module 5 and a controller 7, wherein the power supply module 4 is used to provide a constant voltage; the data acquisition module 5 is arranged in series with the power supply module 4 and at least one thermal field component 6, and is used to collect current information flowing through the thermal field component 6 under a constant voltage; the controller 7 is used to judge the state of the thermal field component 6 according to the current information.

[0044] The detection device for the thermal field component of the crystal pulling furnace provided in the embodiment of the present disclosure can quickly identify abnormal conditions of the thermal field component 6 by obtaining the current information flowing through the thermal field component 6 under the constant voltage and by real-time monitoring of current changes, thereby improving the accuracy and response speed of fault detection.

[0045] It should be noted that the thermal field component 6 in the exemplary embodiment of the present disclosure includes a cylindrical thermal field component, an annular thermal field component, a fence-type cylindrical thermal field component, a stick-shaped molybdenum rod, etc. When introducing the connection method below, the above-mentioned thermal field component 6 is an annular thermal field component as an example.

[0046] In some example embodiments of the present disclosure, reference is made to Figure 3 The power supply module 4 is used to provide a constant voltage, which can be a DC power supply. A transformer, a rectifier, a filter and a voltage stabilizer can be set in the power supply module 4 to ensure that the output DC power is stable and meets the detection requirements.

[0047] In some examples, the power supply module 4 may further include a power control unit for controlling the output of the DC power supply to adapt to different voltage requirements. The power control unit may include a microprocessor or a microcontroller for receiving control signals and adjusting the power output.

[0048] In some example embodiments of the present disclosure, the thermal field component 6 may be connected in series with the power supply module 4 , and a data acquisition module 5 is provided in series with the thermal field component 6 to collect current information passing through the thermal field component 6 .

[0049] The data acquisition module 5 may be an instrument such as an ammeter or an oscilloscope that can convert current information into digital signals, and is used to obtain current information flowing through the thermal field component 6. It should be noted that the thermal field components 6 detected in the present disclosure are all conductive components, such as heaters, graphite temperature detection devices, etc., which will not be described in detail here.

[0050] In some examples, a power supply module 4 and a data acquisition module 5 may be provided for each thermal field component 6. For details, refer to Figure 4 Assuming that the thermal field component 6 is an annular thermal field component and the data acquisition module 5 is an ammeter, the ammeter can be connected in series with the annular thermal field component and connected to the power supply module 4 to obtain current information flowing through the annular thermal field component.

[0051] In some examples, reference Figure 5 , a power supply module 4 and a data acquisition module 5 can be set for multiple thermal field components 6. For example, assuming that the thermal field component 6 includes two annular thermal field components, and the data acquisition module 5 is an ammeter, the ammeter and the two annular thermal field components can be connected in series and connected to the power supply module 4 to obtain current information flowing through the two annular thermal field components.

[0052] In another example, referring to Figure 6 , a data acquisition module 5 can be set for each thermal field component 6. For example, each annular thermal field component and the data acquisition module 5 can be connected in series, and multiple annular thermal field components can be set in parallel at both ends of the power supply module 4. Then, the current information of each annular thermal field component can be obtained, and each annular thermal field component can be individually detected to improve the detection accuracy.

[0053] It should be noted that the connection method of the thermal field component 6 when it is a cylindrical thermal field component, a fence-type cylindrical thermal field component, a stick-shaped molybdenum rod, etc. is the same as the connection method of the annular thermal field component, so it will not be repeated here.

[0054] In some example embodiments of the present disclosure, the controller 7 is used to receive current information of the thermal field component 6 and determine the state of the thermal field component 6 according to the current information, wherein the state of the thermal field component 6 may include a normal state and a fault state.

[0055] In some examples, when a power supply module 4 and a data acquisition module 5 are provided for each thermal field component 6, refer to Figure 7 , the controller 7 can be used to determine that the thermal field component 6 is in a fault state when the current information is greater than the set current upper limit value. Specifically, a curve fitting method can be used to determine the state of the above-mentioned thermal field component 6. An alarm line can be fitted based on the set current upper limit value, and a current line can be determined for the above-mentioned current information. When the value on the current line is greater than the value on the alarm line, it is determined that the thermal field component 6 is in a fault state.

[0056] A data acquisition module 5 is set for each thermal field component 6. After each thermal field and data acquisition module 5 are connected in series, when multiple thermal field components 6 are connected in parallel at both ends of the power supply module 4, the current information corresponding to each thermal field component 6 can be determined. Figure 7 When the current information is greater than the above-mentioned set current upper limit value, it is determined that the above-mentioned thermal field component 6 is in a fault state.

[0057] In some examples, reference Figure 8 When the controller 7 detects that the current information suddenly changes within the preset time, that is, the change within the preset time is greater than the preset threshold, it is judged that the thermal field component 6 is in a fault state. Optionally, the preset time can be 1 second, 2 seconds, etc. The size of the preset threshold can be positively correlated with the above-mentioned constant voltage, such as 0.05, 0.06, etc. The specific value can be customized according to user needs and will not be elaborated here.

[0058] Specifically, refer to Figure 8 , a curve can be fitted according to the set current upper limit value, the preset time and the preset threshold value, the alarm upper limit curve can be determined according to the above-mentioned set current upper limit value, the fluctuation line can be fitted according to the preset time and the preset threshold value, and then the current curve is drawn according to the collected current information. When the fluctuation of the current curve is too large and crosses the fluctuation line, it is determined that the thermal field component 6 is in a fault state, or when the value on the current curve is greater than the value on the alarm upper limit curve, it is determined that the thermal field component 6 is in a fault state.

[0059] In some example embodiments, the controller 7 can also obtain historical current information of the thermal field component 6 within a preset time, and then determine a growth curve of the current information based on the historical current information, and predict the time when the current information is greater than the set current upper limit value based on the growth curve to predict the time when the thermal field component 6 fails. By predicting the time when the failure occurs, the loss caused by the failure can be reduced.

[0060] In some examples, when multiple thermal field components 6 are connected in series with a power supply module 4 and a data acquisition module 5, the set current upper limit values ​​corresponding to different thermal field components 6 can be obtained, that is, different thermal field components 6 can be set with different set current upper limit values. Then, the states of the multiple thermal field components 6 can be determined based on the current information and the set current upper limit values ​​corresponding to each thermal field component 6.

[0061] For example, assuming that the thermal field component 6 includes A and B, the corresponding set current upper limits are n and m respectively, and n is less than m. When the current information is greater than n and less than m, it is determined that A in the thermal field component 6 is in a fault state, and when the current information is greater than m, it is determined that both A in the thermal field component 6 and B in the thermal field component 6 are in a fault state.

[0062] When it is detected that the thermal field component 6 is in a fault state, the controller 7 can control the crystal pulling furnace to stop the crystal pulling operation and send out an alarm signal.

[0063] Optional, see Fig. 9 The controller 7 is connected to the main control system of the crystal pulling furnace and can send an alarm instruction to the main control system so that the main control system sends an alarm signal. At the same time, the controller 7 can send information about the faulty thermal field component 6 to the main control system to facilitate the user to replace the thermal field component 6 in a faulty state.

[0064] The detection device of the thermal field component 6 of the crystal pulling furnace provided in the embodiment of the present disclosure can accurately identify the abnormal situation of the thermal field component 6 by real-time monitoring of the current change in the thermal field component 6, thereby improving the accuracy of fault detection. The detection device can quickly respond to the current change of the thermal field component 6 and timely judge the state of the thermal field component 6, thereby improving the response speed of fault detection. It is possible to monitor the current information flowing through the thermal field component 6 in real time under a constant voltage, and provide real-time data support for fault diagnosis. The controller 7 can predict the time when the thermal field component 6 fails according to the growth curve of the current information, realize predictive maintenance, and reduce the losses caused by the failure. When a fault state is detected, the controller 7 can automatically control the crystal pulling furnace to stop working and send an alarm signal, thereby improving the safety of operation. Through early diagnosis and timely repair, equipment downtime is reduced and maintenance costs are reduced.

[0065] Furthermore, the present disclosure also provides a method for detecting the thermal field components of a crystal pulling furnace, which is applied to the above controller, referring to Fig.10 , the detection method may include step S1010 and step S1020.

[0066] In step S1010, current information flowing through the thermal field component is obtained when a constant voltage is applied across the thermal field component.

[0067] In step S1020, the state of the thermal field component is determined according to the current information.

[0068] In some example embodiments, the state of the thermal field component may include a normal state and a fault state, and when the current information is greater than a set current upper limit value, the state of the thermal field component may be determined to be in a fault state. When multiple thermal field components are connected in series between the constant voltages, each of the thermal field components corresponds to a set current upper limit value; the states of the multiple thermal field components may be determined based on the current information and the set current upper limit values ​​corresponding to each of the thermal field components.

[0069] In some examples, when a change in the current information within a preset time is greater than a preset threshold, it is determined that the thermal field component is in a fault state.

[0070] In some examples, historical current information of each thermal field component within a preset time can be obtained; based on the historical current information and a set current upper limit value corresponding to the thermal field component, the time when the current information is greater than the set current upper limit value is predicted.

[0071] The present disclosure also provides a computer-readable storage medium, which may include: a U disk, a mobile hard disk, a read-only memory, a random access memory, a disk or an optical disk, and other media that can store program codes. Specifically, the computer-readable storage medium stores program instructions, and the program instructions are used for the detection method of the thermal field components of the crystal pulling furnace in the above-mentioned embodiment.

[0072] The embodiments of the present disclosure also provide a computer program product, which includes computer instructions, which are stored in a computer-readable storage medium; a processor of an electronic device reads the computer instructions from the computer-readable storage medium, and the processor executes the computer instructions, so that the electronic device executes to implement the detection method of the thermal field components of the crystal pulling furnace of each of the above embodiments.

[0073] Those skilled in the art should be aware that in one or more of the above examples, the functions described in the embodiments of the present disclosure can be implemented using hardware, software, firmware, or any combination thereof. When implemented using software, these functions can be stored in a computer-readable medium or transmitted as one or more instructions or codes on a computer-readable medium. Computer-readable media include computer storage media and communication media, wherein communication media include any media that facilitates the transmission of computer programs from one place to another. Storage media can be any available media that can be accessed by general or special-purpose computers.

[0074] In the above embodiments, the description of each embodiment has its own emphasis. For the part not described in detail in a certain embodiment, please refer to the relevant description of other embodiments. The technical features of the above embodiments can be combined arbitrarily. In order to make the description concise, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0075] Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the inventions claimed herein. The present disclosure is intended to cover any variations, uses or adaptations of the present disclosure that follow the general principles of the present disclosure and include common knowledge or customary technical means in the art that are not claimed in the present disclosure.

[0076] It should be understood that the present disclosure is not limited to the exact structures that have been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.

Claims

1. A detection device for thermal field components of a crystal pulling furnace, characterized in that: include: A power supply module, used for providing a constant voltage; A data acquisition module, used for acquiring current information flowing through the thermal field component under the constant voltage; A controller is used to determine the state of the thermal field component according to the current information.

2. The detection device according to claim 1, characterized in that: The state of the thermal field component includes a normal state and a fault state; The controller is used for determining that the state of the thermal field component is in a fault state when the current information is greater than a set current upper limit value.

3. The detection device according to claim 2, characterized in that: The controller is used to control the crystal pulling furnace to stop working and send out an alarm signal when the state of the thermal field component is in a fault state.

4. The detection device according to claim 2, characterized in that: When the data acquisition module is connected in series with a plurality of thermal field components, each of the thermal field components corresponds to a set current upper limit value; The controller is used to determine the states of the plurality of thermal field components according to the current information and the set current upper limit value corresponding to each of the thermal field components.

5. The detection device according to claim 1, characterized in that: The state of the thermal field component includes a normal state and a fault state; The controller is used for determining that the thermal field component is in a fault state when a change value of the current information within a preset time is greater than a preset threshold.

6. The detection device according to claim 1, characterized in that: The controller is used to obtain historical current information of each thermal field component within a preset time, and predict the time when the current information is greater than the set current upper limit value according to the current information and the set current upper limit value corresponding to the thermal field component.

7. A method for detecting thermal field components of a crystal pulling furnace, characterized in that: include: Under the condition that a constant voltage is applied across the thermal field component, obtaining current information flowing through the thermal field component; A state of the thermal field component is determined based on the current information.

8. The method according to claim 7, characterized in that The state of the thermal field component includes a normal state and a fault state; Determining the state of the thermal field component according to the current information includes: When the current information is greater than a set current upper limit value, it is determined that the state of the thermal field component is in a fault state.

9. The method according to claim 8, characterized in that When a plurality of thermal field components are connected in series between the constant voltages, each of the thermal field components corresponds to a set current upper limit value; Determining the state of the thermal field component according to the current information includes: The states of the plurality of thermal field components are determined according to the current information and the set current upper limit values ​​corresponding to the respective thermal field components.

10. The method according to claim 7, characterized in that The state of the thermal field component includes a normal state and a fault state; Determining the state of the thermal field component according to the current information includes: When a change value of the current information within a preset time is greater than a preset threshold, it is determined that the thermal field component is in a fault state.

11. The method according to claim 7, characterized in that The method further comprises: Acquire historical current information of each thermal field component within a preset time; The time when the current information is greater than the set current upper limit value is predicted based on the historical current information and the set current upper limit value corresponding to the thermal field component.

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