Airborne photoelectric equipment deep space background weak small target detection performance verification method

Abstract

The invention provides a deep space background weak small target detection performance verification method for airborne photoelectric equipment, and belongs to the technical field of airborne photoelectric equipment, and the method specifically comprises the steps: calculating the signal-to-noise ratio SNR of a deep space background weak small target and a background received by the airborne photoelectric detection equipment according to a design index of the airborne photoelectric detection equipment; a black body, a circular hole target and a parallel optical system are used in a ground laboratory to simulate an airborne photoelectric equipment detection target; calculating a signal-to-noise ratio sSNR of response of the onboard photoelectric equipment to the simulated target in a ground laboratory environment; and if the signal-to-noise ratio sSNR is smaller than or equal to the signal-to-noise ratio SNR, the detection performance of the deep-space background weak small target of the airborne photoelectric equipment meets the requirement, otherwise, the detection performance of the deep-space background weak small target of the airborne photoelectric equipment does not meet the requirement. Through the processing scheme provided by the invention, the external field test flight verification cost can be effectively reduced, and the method has good engineering practicability.

Description

Technical Field

[0001] The present application relates to the field of airborne optoelectronic equipment, and in particular to a method for verifying the detection performance of airborne optoelectronic equipment for faint small targets in deep space background. Background Art

[0002] The deep space background is far away from the earth and other heat sources, and the radiation temperature is close to the cosmic microwave background radiation temperature. The background radiation is mainly manifested as path scattering, and the equivalent background radiation temperature is much lower than the natural ambient temperature on the ground. When airborne optoelectronic equipment detects faint small targets in the deep space background, it can detect faint small targets in the deep space background through multi-frame accumulation technology based on the low radiation intensity characteristics of the deep space background. The detection performance of airborne optoelectronic equipment for faint small targets in the deep space background is difficult to verify through conventional field test flights, and the cost of verifying the detection performance of airborne optoelectronic equipment by constructing a real faint small target in the deep space background is too high. Summary of the invention

[0003] In view of this, the present application provides a method for verifying the detection performance of faint small targets in deep space background by airborne optoelectronic equipment, which solves the problems in the prior art and realizes ground verification of the detection performance of faint small targets in deep space background by airborne optoelectronic equipment. It can effectively reduce the cost of field flight test verification and has good engineering practicality.

[0004] The present application provides a method for verifying the performance of airborne optoelectronic equipment for detecting weak small targets in deep space backgrounds, which adopts the following technical solutions:

[0005] A method for verifying the detection performance of faint small targets in deep space background of airborne optoelectronic equipment, comprising:

[0006] Step 1, calculating the signal-to-noise ratio (SNR) of the faint small target in the deep space background and the background received by the onboard photoelectric detection device according to the design index of the onboard photoelectric detection device;

[0007] Step 2: Use a black body, a circular hole target and a parallel optical system to simulate the detection of targets by airborne optoelectronic equipment in a ground test laboratory;

[0008] Step 3, calculating the signal-to-noise ratio sSNR of the onboard optoelectronic device responding to the simulated target in a ground laboratory environment;

[0009] Step 4, compare the signal-to-noise ratio sSNR of the simulated target response of the airborne optoelectronic equipment in the ground laboratory environment and the signal-to-noise ratio SNR of the response of the faint small target in the deep space background under the design index scenario. If the signal-to-noise ratio sSNR is less than or equal to the signal-to-noise ratio SNR, the detection performance of the airborne optoelectronic equipment for faint small targets in the deep space background meets the requirements, otherwise, the detection performance of the airborne optoelectronic equipment for faint small targets in the deep space background does not meet the requirements.

[0010] Optionally, the step 1 specifically includes:

[0011] Determine the target height and slant range according to the design indicators, and use the general atmospheric radiation transmission software to calculate the atmospheric transmittance τ and background radiation brightness L of the response band of the airborne optoelectronic equipment on the target detection path under the design indicator scenario. e ;

[0012] Calculates the target irradiance received on a single pixel of an onboard optoelectronic device sensor

[0013] Among them, J is the target radiation intensity, R is the distance of the aircraft target detection path in a typical combat scenario, τ0 is the transmittance of the optical system of the airborne optoelectronic equipment, D is the entrance pupil diameter of the optical system of the airborne optoelectronic equipment, and f is the focal length of the optical system of the airborne optoelectronic equipment;

[0014] Calculate the background irradiance received by a single pixel of the onboard optoelectronic device sensor

[0015] Among them, τ0 is the transmittance of the optical system of the airborne optoelectronic equipment, D is the entrance pupil diameter of the optical system of the airborne optoelectronic equipment, and f is the focal length of the optical system of the airborne optoelectronic equipment;

[0016] Calculate the irradiance of the optical system of an onboard optoelectronic device at a single pixel of the sensor

[0017] Wherein, M0 is the radiation emittance of the optical system of the airborne optoelectronic equipment under the design index scenario calculated according to Planck's law, D is the entrance pupil diameter of the optical system of the airborne optoelectronic equipment, and f is the focal length of the optical system of the airborne optoelectronic equipment; Among them, ∈0 is the emissivity of the optical system of the airborne optoelectronic equipment, λ1-λ2 is the response band of the optical system of the airborne optoelectronic equipment, T1 is the equivalent temperature of the optical system under the design index scenario of the airborne optoelectronic equipment, C1 and C2 are constants, C1=(3.7415±0.0003)×10 8 (W·m -2 μm 4 ), C2=(1.4388±0.0002)×10 4 (μm·K);

[0018] Noise equivalent irradiance of onboard optoelectronic device sensors

[0019] Among them, D * is the detection rate of the airborne optoelectronic equipment sensor, A d Airborne optoelectronic device sensor pixel area, T int1 Integration time for the sensors of the airborne optoelectronic equipment;

[0020] The signal-to-noise ratio (SNR) is calculated using the following formula:

[0021]

[0022] Optionally, in step 2, the diameter of the circular hole target d=θ·L, wherein θ is the single-pixel field of view of the airborne optoelectronic device, and L is the focal length of the parallel optical system.

[0023] Optionally, the step 2 specifically includes:

[0024] Place the airborne optoelectronic equipment in a low-temperature box, and set the temperature of the low-temperature box according to the ambient temperature of the aircraft carrying the airborne optoelectronic equipment, and set the temperature range of the low-temperature box to -55°C to -40°C;

[0025] After the temperature of the airborne optoelectronic device in the low-temperature box is stable, adjust the optical axis of the airborne optoelectronic device to align with the target to be detected in front of the target to be detected, and set the sensor integration time to T int2 , ensuring that the photoelectric detection device does not saturate at the current ambient temperature during the current integration time;

[0026] The airborne optoelectronic equipment is configured to stably detect the blackbody temperature T2 of the simulated target.

[0027] Optionally, the step 3 specifically includes:

[0028] Calculates the simulated target irradiance received at a single pixel of the onboard optoelectronic device sensor

[0029]

[0030] Among them, M st is the simulated target radiation emittance calculated according to Planck's law, τ0 is the transmittance of the optical system of the airborne optoelectronic equipment, d is the diameter of the simulated target circular hole, and L is the focal length of the parallel optical system; Among them, λ1-λ2 is the response band of the optical system of the airborne optoelectronic equipment, T2 is the black body temperature of the simulated target, C1 and C2 are constants, C1 = (3.7415 ± 0.0003) × 10 8 (W·m -2 μm 4 ), C2=(1.4388±0.0002)×10 4 (μm·K);

[0031] Compute the simulated background irradiance received on a single pixel of the onboard optoelectronic device sensor

[0032]

[0033] Among them, M sbis the simulated background radiation emittance calculated according to Planck's law, τ0 is the transmittance of the optical system of the airborne optoelectronic equipment, d is the diameter of the simulated target circular hole target corresponding to a single pixel of the optical system of the airborne optoelectronic equipment, and L is the focal length of the parallel optical system; Among them, λ1-λ2 is the response band of the optical system of the airborne optoelectronic equipment, T3 is the black body temperature of the simulated background, C1 and C2 are constants, C1 = (3.7415 ± 0.0003) × 10 8 (W·m -2 μm 4 ), C2=(1.4388±0.0002)×10 4 (μm·K);

[0034] Calculate the irradiance of the optical system of the airborne optoelectronic equipment at a single pixel of the sensor

[0035] Among them, M s0 is the radiant emittance of the optical system of the airborne optoelectronic equipment in the ground test scenario calculated according to Planck's law, D is the entrance pupil diameter of the optical system of the airborne optoelectronic equipment, and f is the focal length of the optical system of the airborne optoelectronic equipment; Among them, ∈0 is the emissivity of the optical system of the airborne optoelectronic equipment, λ1-λ2 is the response band of the optical system of the airborne optoelectronic equipment, T4 is the equivalent temperature of the optical system of the airborne optoelectronic equipment in the ground laboratory scene, C1 and C2 are constants, C1 = (3.7415 ± 0.0003) × 10 8 (W·m -2 μm 4 ), C2=(1.4388±0.0002)×10 4 (μm·K);

[0036] Noise equivalent irradiance of onboard optoelectronic device sensors

[0037] Among them, D * is the detection rate of the airborne optoelectronic equipment sensor, A d Airborne optoelectronic device sensor pixel area, T int2 Integration time for the sensors of the airborne optoelectronic equipment;

[0038] The signal-to-noise ratio sSNR is calculated using the following formula:

[0039]

[0040] Optionally, the step of setting the airborne optoelectronic device to stably detect the black body temperature T2 of the simulated target includes:

[0041] Set the initial temperature, at which the airborne optoelectronic device can stably detect the simulated target, and gradually reduce the blackbody temperature with a certain temperature difference as the step size until the airborne optoelectronic device can no longer stably detect the simulated target. Record the last blackbody temperature as the blackbody temperature T2 at which the airborne optoelectronic device can stably detect the simulated target.

[0042] In summary, this application includes the following beneficial technical effects:

[0043] The verification method of the present application combines the background radiation characteristics and the response characteristics of airborne optoelectronic equipment, innovatively converts the characteristics of faint small targets in the deep space background into the sensitivity characteristics of ground optoelectronic equipment, and realizes ground verification of the detection performance of faint small targets in the deep space background of airborne optoelectronic equipment, which can effectively reduce the cost of field flight test verification and has good engineering practicality. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0045] Figure 1 This is a flow chart of the method for verifying the detection performance of airborne optoelectronic equipment against faint small targets in deep space background. DETAILED DESCRIPTION

[0046] The embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0047] The following describes the implementation methods of the present application through specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The present application can also be implemented or applied through other different specific implementation methods, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that, in the absence of conflict, the following embodiments and the features in the embodiments can be combined with each other. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without making creative work belong to the scope of protection of the present application.

[0048] It should be noted that various aspects of the embodiments within the scope of the appended claims are described below. It should be apparent that the aspects described herein may be embodied in a wide variety of forms, and any specific structure and / or function described herein is merely illustrative. Based on the present application, it should be understood by those skilled in the art that an aspect described herein may be implemented independently of any other aspect, and two or more of these aspects may be combined in various ways. For example, any number of aspects described herein may be used to implement a device and / or practice a method. In addition, other structures and / or functionalities other than one or more of the aspects described herein may be used to implement this device and / or practice this method.

[0049] It should also be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present application. The illustrations only show the components related to the present application rather than being drawn according to the number, shape and size of the components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed at will, and the component layout may also be more complicated.

[0050] Additionally, in the following description, specific details are provided to facilitate a thorough understanding of the examples. However, it will be understood by those skilled in the art that the aspects described may be practiced without these specific details.

[0051] The present application provides a method for verifying the detection performance of an airborne optoelectronic device for faint small targets in a deep space background.

[0052] like Figure 1 As shown, a method for verifying the detection performance of a faint small target in a deep space background of an airborne optoelectronic device includes:

[0053] Step 1, calculating the signal-to-noise ratio (SNR) of the faint small target in the deep space background and the background received by the onboard photoelectric detection device according to the design index of the onboard photoelectric detection device;

[0054] Step 2: Use a black body, a circular hole target and a parallel optical system to simulate the detection of targets by airborne optoelectronic equipment in a ground test laboratory;

[0055] Step 3, calculating the signal-to-noise ratio sSNR of the onboard optoelectronic device responding to the simulated target in a ground laboratory environment;

[0056] Step 4, compare the signal-to-noise ratio sSNR of the simulated target response of the airborne optoelectronic equipment in the ground laboratory environment and the signal-to-noise ratio SNR of the response of the faint small target in the deep space background under the design index scenario. If the signal-to-noise ratio sSNR is less than or equal to the signal-to-noise ratio SNR, the detection performance of the airborne optoelectronic equipment for faint small targets in the deep space background meets the requirements, otherwise, the detection performance of the airborne optoelectronic equipment for faint small targets in the deep space background does not meet the requirements.

[0057] The step 1 specifically includes:

[0058] Determine the target height and slant range according to the design indicators, and use the general atmospheric radiation transmission software to calculate the atmospheric transmittance τ and background radiation brightness L of the response band of the airborne optoelectronic equipment on the target detection path under the design indicator scenario. e .

[0059] Calculates the target irradiance received on a single pixel of an onboard optoelectronic device sensor Among them, J is the target radiation intensity, R is the target detection path distance in a typical combat scenario, τ0 is the transmittance of the optical system of the airborne optoelectronic equipment, D is the entrance pupil diameter of the optical system of the airborne optoelectronic equipment, and f is the focal length of the optical system of the airborne optoelectronic equipment.

[0060] Calculate the background irradiance received by a single pixel of the onboard optoelectronic device sensor Among them, τ0 is the transmittance of the optical system of the airborne optoelectronic equipment, D is the entrance pupil diameter of the optical system of the airborne optoelectronic equipment, and f is the focal length of the optical system of the airborne optoelectronic equipment.

[0061] Calculate the irradiance of the optical system of an onboard optoelectronic device at a single pixel of the sensor Among them, M0 is the radiation emittance of the optical system of the airborne optoelectronic equipment under the design index scenario calculated according to Planck's law, D is the entrance pupil diameter of the optical system of the airborne optoelectronic equipment, and f is the focal length of the optical system of the airborne optoelectronic equipment; the calculation method of M0 is: Among them, ∈0 is the emissivity of the optical system of the airborne optoelectronic equipment, λ1-λ2 is the response band of the optical system of the airborne optoelectronic equipment, T1 is the equivalent temperature of the optical system under the design index scenario of the airborne optoelectronic equipment, C1 and C2 are constants, C1=(3.7415±0.0003)×10 8 (W·m -2 μm 4 ), C2=(1.4388±0.0002)×10 4 (μm·K).

[0062] Noise equivalent irradiance of onboard optoelectronic device sensors Among them, D * is the detection rate of the airborne optoelectronic equipment sensor, A d Airborne optoelectronic device sensor pixel area, T int1 It is the integration time of the airborne optoelectronic equipment sensor.

[0063] The signal-to-noise ratio (SNR) is calculated using the following formula:

[0064] In step 2, the diameter of the circular hole target d=θ·L, wherein θ is the single-pixel field of view of the airborne optoelectronic device, and L is the focal length of the parallel optical system.

[0065] The step 2 specifically includes:

[0066] In order to avoid saturation during the multi-frame accumulation of airborne photoelectric detection equipment under normal temperature in the laboratory, the airborne photoelectric equipment is placed in a low-temperature box, and the temperature of the low-temperature box is set according to the ambient temperature of the aircraft carrying the airborne photoelectric equipment. The temperature range of the low-temperature box is set to minus 55°C to minus 40°C.

[0067] After the temperature of the airborne optoelectronic device in the low-temperature box is stable, adjust the optical axis of the airborne optoelectronic device to align with the target to be detected in front of the target to be detected, and set the sensor integration time to T int2 , ensuring that the photoelectric detection device does not saturate at the current ambient temperature during the current integration time;

[0068] Set the blackbody temperature T2 at which the airborne optoelectronic device can stably detect the simulated target: set the initial temperature, at which the airborne optoelectronic device can stably detect the simulated target, gradually lower the blackbody temperature with a certain temperature difference as the step size until the airborne optoelectronic device can no longer stably detect the simulated target, and record the last blackbody temperature as the blackbody temperature T2 at which the airborne optoelectronic device can stably detect the simulated target.

[0069] The step 3 specifically includes:

[0070] Calculates the simulated target irradiance received at a single pixel of the onboard optoelectronic device sensor Among them, M st is the simulated target radiation emittance calculated according to Planck’s law, τ0 is the transmittance of the optical system of the airborne optoelectronic equipment, d is the diameter of the simulated target circular hole target, and L is the focal length of the parallel optical system. st Calculation method Among them, λ1-λ2 is the response band of the optical system of the airborne optoelectronic equipment, T2 is the black body temperature of the simulated target, C1 and C2 are constants, C1 = (3.7415 ± 0.0003) × 10 8 (W·m -2 μm 4 ), C2=(1.4388±θ.0002)×10 4 (μm·K).

[0071] Compute the simulated background irradiance received on a single pixel of the onboard optoelectronic device sensor Among them, M sb is the simulated background radiation emittance calculated according to Planck's law, τ is the transmittance of the optical system of the airborne optoelectronic device, d is the diameter of the simulated target circular hole target corresponding to a single pixel of the optical system of the airborne optoelectronic device, L is the focal length of the parallel optical system; M sb The calculation method is Among them, λ1-λ2 is the response band of the optical system of the airborne optoelectronic equipment, T3 is the black body temperature of the simulated background, C1 and C2 are constants, C1 = (3.7415 ± 0.0003) × 10 8 (W·m -2 μm 4 ), C2=(1.4388±0.0002)×10 4 (μm·K).

[0072] Calculate the irradiance of the optical system of the airborne optoelectronic equipment at a single pixel of the sensor Among them, M s0 is the radiant emittance of the optical system of the airborne optoelectronic equipment in the ground test scenario calculated according to Planck's law, D is the entrance pupil diameter of the optical system of the airborne optoelectronic equipment, and f is the focal length of the optical system of the airborne optoelectronic equipment; M s0 The calculation method is Among them, ∈0 is the emissivity of the optical system of the airborne optoelectronic equipment, λ1-λ2 is the response band of the optical system of the airborne optoelectronic equipment, T4 is the equivalent temperature of the optical system of the airborne optoelectronic equipment in the ground laboratory scene, C1 and C2 are constants, C1 = (3.7415 ± 0.0003) × 10 8 (W·m -2 μm 4 ), C2=(1.4388±0.0002)×10 4 (μm·K).

[0073] Noise equivalent irradiance of onboard optoelectronic device sensors Among them, D * is the detection rate of the airborne optoelectronic equipment sensor, A d Airborne optoelectronic device sensor pixel area, T int2 It is the integration time of the airborne optoelectronic equipment sensor.

[0074] The signal-to-noise ratio sSNR is calculated using the following formula:

[0075] The verification method of the present application combines the background radiation characteristics and the response characteristics of airborne optoelectronic equipment, innovatively converts the characteristics of faint small targets in the deep space background into the sensitivity characteristics of ground optoelectronic equipment, and realizes ground verification of the detection performance of faint small targets in the deep space background of airborne optoelectronic equipment, which can effectively reduce the cost of field flight test verification and has good engineering practicality.

[0076] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed in the present application should be included in the protection scope of the present application. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A method for verifying the detection performance of faint small targets in deep space background of airborne optoelectronic equipment, characterized in that: include: Step 1, calculating the signal-to-noise ratio (SNR) of the faint small target in the deep space background and the background received by the onboard photoelectric detection device according to the design index of the onboard photoelectric detection device; Step 2: Use a black body, a circular hole target and a parallel optical system to simulate the detection of targets by airborne optoelectronic equipment in a ground test laboratory; Step 3, calculating the signal-to-noise ratio sSNR of the onboard optoelectronic device responding to the simulated target in a ground laboratory environment; Step 4, compare the signal-to-noise ratio sSNR of the simulated target response of the airborne optoelectronic equipment in the ground laboratory environment and the signal-to-noise ratio SNR of the response of the faint small target in the deep space background under the design index scenario. If the signal-to-noise ratio sSNR is less than or equal to the signal-to-noise ratio SNR, the detection performance of the airborne optoelectronic equipment for faint small targets in the deep space background meets the requirements, otherwise, the detection performance of the airborne optoelectronic equipment for faint small targets in the deep space background does not meet the requirements.

2. The method for verifying the detection performance of faint small targets in deep space background of airborne optoelectronic equipment according to claim 1 is characterized in that: The step 1 specifically includes: Determine the target height and slant range according to the design indicators, and use the general atmospheric radiation transmission software to calculate the atmospheric transmittance τ and background radiation brightness L of the response band of the airborne optoelectronic equipment on the target detection path under the design indicator scenario. e ; Calculates the target irradiance received on a single pixel of an onboard optoelectronic device sensor Among them, J is the target radiation intensity, R is the distance of the aircraft target detection path in a typical combat scenario, τ0 is the transmittance of the optical system of the airborne optoelectronic equipment, D is the entrance pupil diameter of the optical system of the airborne optoelectronic equipment, and f is the focal length of the optical system of the airborne optoelectronic equipment; Calculate the background irradiance received by a single pixel of the onboard optoelectronic device sensor Among them, τ0 is the transmittance of the optical system of the airborne optoelectronic equipment, D is the entrance pupil diameter of the optical system of the airborne optoelectronic equipment, and f is the focal length of the optical system of the airborne optoelectronic equipment; Calculate the irradiance of the optical system of an onboard optoelectronic device at a single pixel of the sensor Wherein, M0 is the radiation emittance of the optical system of the airborne optoelectronic equipment under the design index scenario calculated according to Planck's law, D is the entrance pupil diameter of the optical system of the airborne optoelectronic equipment, and f is the focal length of the optical system of the airborne optoelectronic equipment; Among them, ∈0 is the emissivity of the optical system of the airborne optoelectronic equipment, λ1-λ2 is the response band of the optical system of the airborne optoelectronic equipment, T1 is the equivalent temperature of the optical system under the design index scenario of the airborne optoelectronic equipment, C1 and C2 are constants, C1=(3.7415±0.0003)×10 8 (W·m -2 μm 4 ), C2=(1.4388±0.0002)×10 4 (μm·K); Noise equivalent irradiance of onboard optoelectronic device sensors Among them, D * is the detection rate of the airborne optoelectronic equipment sensor, A d Airborne optoelectronic device sensor pixel area, T int1 Integration time for the sensors of the airborne optoelectronic equipment; The signal-to-noise ratio (SNR) is calculated using the following formula:

3. The method for verifying the detection performance of faint small targets in deep space background of airborne optoelectronic equipment according to claim 1 is characterized in that: In step 2, the diameter of the circular hole target d=θ·L, wherein θ is the single-pixel field of view of the airborne optoelectronic device, and L is the focal length of the parallel optical system.

4. The method for verifying the detection performance of faint small targets in deep space background of airborne optoelectronic equipment according to claim 2 is characterized in that: The step 2 specifically includes: Place the airborne optoelectronic equipment in a low-temperature box, and set the temperature of the low-temperature box according to the ambient temperature of the aircraft carrying the airborne optoelectronic equipment, and set the temperature range of the low-temperature box to -55°C to -40°C; After the temperature of the airborne optoelectronic device in the low-temperature box is stable, adjust the optical axis of the airborne optoelectronic device to align with the target to be detected in front of the target to be detected, and set the sensor integration time to T int2 , ensuring that the photoelectric detection device does not saturate at the current ambient temperature during the current integration time; The airborne optoelectronic equipment is configured to stably detect the blackbody temperature T2 of the simulated target.

5. The method for verifying the detection performance of faint small targets in deep space background of airborne optoelectronic equipment according to claim 4 is characterized in that: The step 3 specifically includes: Calculates the simulated target irradiance received at a single pixel of the onboard optoelectronic device sensor Among them, M st is the simulated target radiation emittance calculated according to Planck's law, τ0 is the transmittance of the optical system of the airborne optoelectronic equipment, d is the diameter of the simulated target circular hole, and L is the focal length of the parallel optical system; Among them, λ1-λ2 is the response band of the optical system of the airborne optoelectronic equipment, T2 is the black body temperature of the simulated target, C1 and C2 are constants, C1 = (3.7415 ± 0.0003) × 10 8 (W·m -2 μm 4 ), C2=(1.4388±0.0002)×10 4 (μm·K); Compute the simulated background irradiance received on a single pixel of the onboard optoelectronic device sensor Among them, M sb is the simulated background radiation emittance calculated according to Planck's law, τ0 is the transmittance of the optical system of the airborne optoelectronic equipment, d is the diameter of the simulated target circular hole target corresponding to a single pixel of the optical system of the airborne optoelectronic equipment, and L is the focal length of the parallel optical system; Among them, λ1-λ2 is the response band of the optical system of the airborne optoelectronic equipment, T3 is the black body temperature of the simulated background, C1 and C2 are constants, C1 = (3.7415 ± 0.0003) × 10 8 (W·m -2 μm 4 ), C2=(1.4388±0.0002)×10 4 (μm·K); Calculate the irradiance of the optical system of the airborne optoelectronic equipment at a single pixel of the sensor Among them, M s0 is the radiant emittance of the optical system of the airborne optoelectronic equipment in the ground test scenario calculated according to Planck's law, D is the entrance pupil diameter of the optical system of the airborne optoelectronic equipment, and f is the focal length of the optical system of the airborne optoelectronic equipment; Among them, ∈0 is the emissivity of the optical system of the airborne optoelectronic equipment, λ1-λ2 is the response band of the optical system of the airborne optoelectronic equipment, T4 is the equivalent temperature of the optical system of the airborne optoelectronic equipment in the ground laboratory scene, C1 and C2 are constants, C1 = (3.7415 ± 0.0003) × 10 8 (W·m -2 μm 4 ), C2=(1.4388±0.0002)×10 4 (μm·K); Noise equivalent irradiance of onboard optoelectronic device sensors Among them, D * is the detection rate of the airborne optoelectronic equipment sensor, A d Airborne optoelectronic device sensor pixel area, T int2 Integration time for the sensors of the airborne optoelectronic equipment; The signal-to-noise ratio sSNR is calculated using the following formula:

6. The method for verifying the detection performance of faint small targets in deep space background of airborne optoelectronic equipment according to claim 4 is characterized in that: The steps for setting up the airborne optoelectronic equipment to stably detect the black body temperature T2 of the simulated target include: Set the initial temperature, at which the airborne optoelectronic device can stably detect the simulated target, and gradually reduce the blackbody temperature with a certain temperature difference as the step size until the airborne optoelectronic device can no longer stably detect the simulated target. Record the last blackbody temperature as the blackbody temperature T2 at which the airborne optoelectronic device can stably detect the simulated target.

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