A pixel-level MEMS structure and use method

Abstract

The present invention discloses a pixel-level MEMS structure and a method of using the same, and belongs to the technical field of display. A pixel-level MEMS structure includes a substrate and a light source, wherein the substrate is located below the light source; a pixel structure, wherein the pixel structure is located above the light source; the pixel structure includes: a reflective film 1, wherein the reflective film 1 is located above the light source, a reflective film 2 is arranged above the reflective film 1, a support layer is arranged between the reflective film 1 and the reflective film 2, and a closed optical Fabry-Perot cavity is formed between the reflective film 1 and the reflective film 2 and the inner wall of the support layer; the present invention can realize a full-spectrum color display solution with only a single LED or without an LED light source by designing different light source structures, so that there is no minimum size limit for the pixel point, and the resolution of the traditional LED screen size can be twice or more when the size of the LED light source is the same, and the display of different colors is based on the same light source point, and there is no overlapping image of colors.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a pixel-level MEMS structure and a use method thereof. Background Art

[0002] Displays have become core components in daily devices such as computers, mobile phones, TVs, and AR and VR glasses. The current common display solution is to use liquid crystal screens based on the three primary colors of optics. By adjusting the transmittance of three filters (i.e., red, green, and blue) in a single pixel at the same time, the visible spectrum range and other colors (such as yellow, purple, etc.) are synthesized to achieve the purpose of presenting various colors. Since the core structure of realizing the three-primary color display is to place three luminous color blocks of red, green, and blue in a single pixel at the same time, general-purpose displays often have problems such as low resolution, poor color, and the generation of three color blocks when viewed from a close distance; In response to the above problems, some manufacturers have proposed a display solution based on MicroLED. By reducing the size of a single light-emitting color block LED, the overall resolution is improved, and the color is improved. However, the reduction in LED size is accompanied by an increase in mass production prices and R&D difficulties. Therefore, the current display solution using microLED is still expensive (a 110-inch TV costs up to millions of RMB), and the resolution is still very limited (to achieve 8K clarity, the microLED display has to be hundreds of inches); Summary of the invention

[0003] The purpose of the present invention is to solve the problems in the prior art and to propose a pixel-level MEMS structure and a method of use.

[0004] In order to achieve the above object, the present invention adopts the following technical solutions: A pixel-level MEMS structure comprises a substrate and a light source, wherein the substrate is located below the light source; and a pixel structure, wherein the pixel structure is located above the light source; the pixel structure comprises: a reflective film 1, wherein the reflective film 1 is located above the light source, a reflective film 2 is arranged above the reflective film 1, a support layer is arranged between the reflective film 1 and the reflective film 2, and a closed optical Fabry-Perot cavity is formed between the reflective film 1, the reflective film 2 and the inner wall of the support layer.

[0005] Preferably, a metal electrode circuit is provided between the first reflective film and the second reflective film.

[0006] Preferably, the metal electrode circuit comprises a metal sheet 1 and a metal sheet 2, wherein the metal sheet 1 is installed below the reflective film 1, and the metal sheet 2 is installed above the reflective film 2.

[0007] Preferably, a module board is connected below the substrate, and a circuit board, a control module, and a first electrical connection port and a second electrical connection port are integrated on the module board.

[0008] Preferably, a module mounting plate is provided below the base plate, the module mounting plate is provided with a groove to facilitate the insertion of the module plate, a slot is provided around the groove, an insert plate is fixedly connected around the base plate, and a limiting block is fixedly connected to the bottom end of the insert plate.

[0009] Preferably, the outer wall of the plug board is slidably connected to the inner wall of the slot, a limiting block is fixedly connected to the bottom end of the plug board, a card slot is provided at the bottom end of the slot, and the inner wall of the card slot is slidably connected to the outer wall of the limiting block.

[0010] A method for using pixel-level MEMS, further comprising the following steps: S1: The substrate is placed under the light source, mainly to provide support and fixation for the light source and pixel structure; S2: The light emitted by the light source passes through the reflective film 1 and enters the optical Fabry-Perot cavity formed between the reflective film 1, the reflective film 2 and the inner wall of the supporting layer.

[0011] Preferably, after the light source in step S2 enters the optical Fabry-Perot cavity, it undergoes multiple reflections between the first reflective film and the second reflective film and finally emits from the second reflective film. This is a tunable filter structure designed using the principle of optical interference.

[0012] Preferably, when the metal sheet 1 and the metal sheet 2 in the metal electrode circuit are in use, a certain voltage difference V is applied, and an electrostatic effect is generated through the upper and lower electrodes under the action of the voltage.

[0013] Preferably, the electrostatic effect described above causes an upward or downward electrostatic force to be generated at the locations where the metal sheet 1 and the metal sheet 2 are located, thereby driving a change in the thickness D of the air gap between the two reflective films.

[0014] Compared with the prior art, the present invention provides a pixel-level MEMS structure, which has the following beneficial effects: 1. This pixel-level MEMS structure can realize full-spectrum color display with only a single LED or no LED light source by designing different light source structures. This makes the pixel point have no minimum size limit. Under the condition of the same LED light source size, the resolution can be twice or more of the traditional LED screen size. In addition, the display of different colors is based on the same light source point, and there is no overlapping color image; 2. This is a pixel-level MEMS structure. After the light emitted by the light source passes through the reflective film 1, it enters the optical Fabry-Perot cavity formed between the reflective film 1 and the reflective film 2 and the inner wall of the supporting layer. After multiple reflections between the reflective film 1 and the reflective film 2, it is finally emitted from the reflective film 2. It is a tunable filtering structure designed using the principle of optical interference.

[0015] 3. This pixel-level MEMS structure applies a certain voltage difference V to the metal sheet 1 and the metal sheet 2 when in use. The upper and lower electrodes will generate an electrostatic effect under the action of the voltage. The electrostatic effect causes the metal sheet 1 and the metal sheet 2 to generate an upward or downward electrostatic force at their positions, thereby driving the change in the air gap thickness D between the two reflective films. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A schematic diagram of a pixel-level MEMS structure proposed by the present invention; Figure 2 A wavelength tuning schematic diagram of a pixel-level MEMS structure proposed by the present invention, in which the air gap changes according to the application of different voltages, thereby changing the emission wavelength accordingly; Figure 3 A schematic diagram of a voltage working mode of a control circuit of a pixel-level MEMS structure proposed by the present invention; Figure 4 This is a front view of a pixel-level MEMS structure proposed by the present invention; Figure 5 A pixel-level MEMS structure proposed by the present invention Figure 4 Bottom view of Figure 6 A pixel-level MEMS structure proposed by the present invention Figure 4 Schematic diagram of the decomposition of Figure 7 A pixel-level MEMS structure proposed by the present invention Figure 6 A cross-sectional view of Figure 8 A front view of a module mounting plate of a pixel-level MEMS structure proposed by the present invention; Fig. 9 A pixel-level MEMS structure proposed by the present invention Figure 8 Rear view of Fig.10 A cross-sectional view of a slot of a pixel-level MEMS structure proposed by the present invention; Fig.11 A front view of a module board of a pixel-level MEMS structure proposed by the present invention; Fig.12 This is a front cross-sectional view of a series of ejector pins in a pixel-level MEMS structure proposed by the present invention.

[0017] In the figure: 1, substrate; 2, light source; 3, reflective film 1; 302, reflective film 2; 4, supporting layer; 6, metal electrode circuit; 601, metal sheet 1; 602, metal sheet 2; 7, module board; 701, electrical connection port 1; 702, electrical connection port 2; 8, module mounting plate; 801, plug-in board; 802, slot; 803, card slot; 804, limit block; 805, positioning hole; 9, series ejector pin; 901, ejector seat; 902, ejector pin; 903, sliding sleeve; 904, sliding hole; 905, insulating spring; 10, series metal sheets. DETAILED DESCRIPTION

[0018] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0019] In the description of the present invention, it is necessary to understand that the terms "upper", "lower", "front", "back", "left", "right", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0020] Example 1: Reference Figure 1 - Figure 7 A pixel-level MEMS structure includes: a substrate 1 and a light source 2, wherein the substrate 1 is located below the light source 2; a pixel structure, wherein the pixel structure is located above the light source 2; the pixel structure includes: a reflective film 1 3, wherein the reflective film 1 3 is located above the light source 2, a reflective film 2 302 is disposed above the reflective film 1 3, a support layer 4 is disposed between the reflective film 1 3 and the reflective film 2 302, and a closed optical Fabry-Perot cavity is formed between the reflective film 1 3, the reflective film 2 302 and the inner wall of the support layer 4; A metal electrode circuit 6 is provided between the reflective film 1 3 and the reflective film 2 302; The metal electrode circuit 6 includes a metal sheet 1 601 and a metal sheet 2 602 . The metal sheet 1 601 is installed below the reflective film 1 3 , and the metal sheet 2 602 is installed above the reflective film 2 302 . Working principle: The substrate 1 is arranged below the light source 2, mainly to provide support and fixation for the light source 2 and the pixel structure. After passing through the reflective film 1 3, the light emitted by the light source 2 enters the optical Fabry-Perot cavity formed between the reflective film 1 3 and the reflective film 2 302 and the inner wall of the support layer 4, and finally emits from the reflective film 2 302 after multiple reflections between the reflective film 1 3 and the reflective film 2 302. It is a tunable filter structure designed using the optical interference principle, wherein a certain voltage difference V is applied to the metal sheet 1 601 and the metal sheet 2 602 in the metal electrode circuit 6 when in use, and an electrostatic effect is generated under the action of the voltage through the upper and lower electrodes. The electrostatic effect causes the metal sheet 1 601 and the metal sheet 2 602 to generate an upward or downward electrostatic force at their positions, thereby driving the change of the air gap thickness D between the two reflective films, such as Figure 2 As shown, the applied voltages are V1, V2, and V3, corresponding to blue, green, and red, respectively.

[0021] Specifically: the thickness of the substrate 1 can usually be in the range of millimeters to micrometers, and the material can be a rigid material, such as glass, or a thin film material with flexible characteristics, such as PEN, PET, etc. The light source 2 can be a broadband light source 2, covering the visible light spectrum range, generally 400nm-700nm; the light source 2 has two forms, the first is a passive light source 2 that cannot be adjusted in brightness, in which case the light source 2 can introduce light from the side of the substrate 1 through a light guide or other light transmission device; the second form of the light source 2 is an active adjustable LED light source 2, in which case each pixel is equipped with an LED light source 2, the light source 2 is directly placed in the pixel area, and the brightness can be adjusted by current or voltage; the light source 2 can be diffuse light with a certain divergence angle, or it can be parallel light corrected by some optical elements; The reflective film 1 3 and the reflective film 2 302 are two thin film structures with a certain reflectivity, which form an optical Fabry-Perot cavity structure with a certain distance through the support layer 4; the reflective film 1 3 and the reflective film 2 302 can be made of pure metal films such as aluminum, silver, tungsten, etc., which can be generated by atomic layer deposition and other technologies, and can also be mass-produced at low cost and quickly through processes such as embossing; the thickness of the film composed of metal materials is usually in the range of tens of nanometers, and the reflectivity of the reflective film 1 3 and the reflective film 2 302 can generally be adjusted by changing the thickness of the metal film; this design can achieve tuning of the full visible spectrum range, but due to the low reflectivity of the metal , the final emission full wavelength half width (FWHM) is relatively wide, usually tens of nanometers; the reflective film 1 3 and the reflective film 2 302 can also be composed of a multi-layer thin film structure, for example, each layer of the Bragg structure thin film is formed alternately by two materials with different refractive indices, and the thickness of each layer is 1 / 4 of the central wavelength, which is generally the middle wavelength of the spectral band, such as 550nm. The reflective film 1 3 and the reflective film 2 302 of the Bragg structure can ensure a higher reflectivity of R>90%, thereby obtaining a more refined emission wavelength tuning effect. The structure realized by this kind of thin film can also be compatible with CMOS-based systems, and the emission wavelength can be accurately adjusted by voltage; The function of the reflective film 1 3 and the reflective film 2 302 in this solution is to cooperate with the support layer 4 to form an optical Fabry-Perot cavity structure, which is a tunable filter structure designed using the optical interference principle. Under a certain air gap, light forms a specific phase difference through multiple reflections between the reflective film 1 3 and the reflective film 2 302 with high reflectivity. At a certain specific wavelength λ, if the following formula is satisfied, an interference enhancement effect will be generated to achieve the purpose of filtering; mλ=2ndcos(θ) Where m is the order of interference; n is the refractive index of the Fabry-Perot cavity medium, such as air gap, the refractive index is 1; d is the thickness of the gap between the reflective film M1 and M2, and θ is the angle at which the light beam reaches the reflective film M1; the air gap between the reflective film M1 and M2 is adjusted to satisfy the change in the wavelength λ of the above formula; usually users can achieve many orders of interference such as m=1, 2, 3 by controlling the air gap, but due to the limitation of the pixel size of the display, the second-order interference effect, that is, m=2, is usually used to control the middle thickness d from 400nm to 700nm, so that the light wave can be imaged from the blue to red range; The present invention realizes changing the thickness of the air gap by applying a reverse voltage to the electrode through the electrostatic effect, thereby achieving the purpose of adjusting the gap d; The supporting layer 4 is mainly used to support the reflective film 1 3 and the reflective film 2 302. Its thickness is determined by the required thickness of the air cavity, usually about 0.6um-2um. This layer can be made of different materials, and a hollow structure is generated by etching, embossing and other technologies; Through the thickness variation range corresponding to the tension of the electrostatic effect, the corresponding curve of wavelength and voltage can be obtained, such as Figure 3 As shown, the output wavelength range is changed by controlling the output mode of the voltage V, wherein the voltage V can have different output modes according to the requirements of the output wavelength band, for example: 1. Monochrome display mode, a fixed voltage V is applied to a single frame fix , which can make the display present a single color with high saturation.

[0022] 2. In the white display mode, a gradually rising voltage V needs to be applied within a single frame. scan , the voltage changes steadily, causing the emission wavelength to change from blue to red; due to the fast frequency of scanning the entire spectral range (must be less than 100ms), the human eye itself will produce a visual persistence effect, thus producing a white effect.

[0023] 3. Mixed color mode: continuously adjusts a voltage in one frame to mix the colors of the entire scan and produce a more diversified color effect.

[0024] At the same time, by setting different voltage combinations within a single frame time, it is also possible to achieve a mixture of multiple wavelengths (for example, blue, green, and red are displayed simultaneously) to achieve the visual effect of a universal display. This requires the use of triggers and high-speed voltage conversion to achieve this. Generally, the images captured by the camera are transmitted based on the storage of RGB matrix information. Therefore, in order to reproduce the color, it is necessary to convert the RGB color coordinates into a coordinate space system with wavelength information. One way to achieve this is to convert the image data from the RGB space into the HSV space, and then use the H value to represent the corresponding center wavelength value, S represents the saturation, and together determine the voltage operation mode; V represents the brightness, which determines the intensity of light source 2; In another case, if the image is a hyperspectral image that has spectral information itself, the voltage operation mode can be directly determined according to the corresponding band; By superimposing numerous pixel structures designed by the present invention on a two-dimensional plane and controlling the voltage and light source 2 of each pixel point respectively, the purpose of color display can be finally achieved; Different from the display structure that requires three RGB light-emitting areas in the traditional display solution, it avoids the problems of low resolution, high price, overlapping, and high cost in the traditional display solution; in addition, an important application scenario of this display is that it can match imaging with the current hyperspectral imaging technology, so that some rapid image recognition without algorithm addition can be performed, which can be applied in medical surgery imaging, agricultural rapid identification, AR, VR glasses and other applications; The color rendering scheme, structure and implementation method of this patent invention are alternatives to the traditional RGB color rendering scheme and have great potential to become important optical equipment in the fields of daily consumption, scientific research, military industry, virtual reality (AR / VR), and medical treatment in the future; This method has the following advantages over traditional display solutions: High resolution: The present invention can realize full-spectrum color display with only a single LED or no LED source by designing different light source structures, so that there is no minimum size limit for pixel points. With the same size of LED light source 2, the resolution of the traditional LED screen size can be twice or more; Vivid images: Due to the different underlying color rendering mechanism, this technology can perfectly present the color details in the image; No color overlap: The display of different colors is based on the same two light sources, and there is no color overlap; Wide application: It can be made on substrates such as plastic or CMOS circuits, and has a wide range of application scenarios. It can not only replace microLED displays in micro-display fields such as AR and VR glasses, but also be compatible with the application needs of daily consumer products or higher-end devices such as flexible screens and large-size screens; Compact structure: no MEMS is required to rotate the lens or mix the three colors of light for the lens, no fine color block effect, saving most of the space and control circuits, and helping heat dissipation; It has hyperspectral compatibility: it can display hyperspectral images and has great application potential in many fields such as medicine, agriculture, and military in the future.

[0025] Example 2: Reference Figure 1 - Figure 3 , a pixel-level MEMS structure, the substrate 1 is usually of a thickness of millimeters to micrometers, and is made of glass material. The light source 2 is a broad light source 2, covering the visible light spectrum range, generally 400nm-700nm; the light source 2 is a passive light source 2 that cannot be adjusted in brightness. In this case, the light source 2 can guide light from the side of the substrate 1 through a light guide or other light transmission device; The reflective film 1 3 and the reflective film 2 302 are two thin film structures with a certain reflectivity, and an optical Fabry-Perot cavity structure with a certain distance is formed through the support layer 4; the reflective film 1 3 and the reflective film 2 302 can be made of pure metal aluminum thin film, and the thickness of the thin film made of metal materials is usually in the range of tens of nanometers. Generally, the reflectivity of the reflective film 1 3 and the reflective film 2 302 can be adjusted by changing the thickness of the metal film; this design can achieve tuning in the full visible spectrum range; Example 3: Reference Figure 1 - Figure 3, a pixel-level MEMS structure, the substrate 1 is usually of a thickness of millimeters to micrometers, the material is a thin film material PEN with flexible characteristics, the light source 2 is an active adjustable LED light source 2, in this case, each pixel is equipped with an LED light source 2, the light source 2 is directly placed in the pixel area, and the brightness can be adjusted by current or voltage; The reflective film 1 3 and the reflective film 2 302 are two thin film structures with a certain reflectivity, and an optical Fabry-Perot cavity structure with a certain distance is formed through the support layer 4; the reflective film 1 3 and the reflective film 2 302 can be composed of a multi-layer thin film layer structure, for example, each layer of the film of the Bragg structure is formed alternately by two materials with different refractive indices, and the thickness of each layer is 1 / 4 of the central wavelength, which is generally the middle wavelength of the spectral band, such as 550nm. The reflective film 1 3 and the reflective film 2 302 of the Bragg structure can ensure a higher reflectivity with R>90%, thereby obtaining a more refined output wavelength tuning effect. The structure realized by using this kind of film can also be compatible with a CMOS-based system, and the output wavelength can be accurately adjusted by voltage; Example 3: Reference Figure 1 - Figure 3 The substrate 1 is usually of a thickness ranging from millimeters to micrometers, and is made of glass. The light source 2 is an active adjustable LED light source 2. In this case, each pixel is equipped with an LED light source 2, which is directly placed in the pixel area, and the brightness can be adjusted by current or voltage. The reflective film 1 3 and the reflective film 2 302 are two thin film structures with a certain reflectivity, and an optical Fabry-Perot cavity structure with a certain distance is formed through the support layer 4; the reflective film 1 3 and the reflective film 2 302 materials can be made of pure metal tungsten thin films, and the thickness of the thin films made of metal materials is usually in the range of tens of nanometers. Generally, the reflectivity of the reflective film 1 3 and the reflective film 2 302 can be adjusted by changing the thickness of the metal film; this design can achieve tuning in the full visible spectrum range, and the reflective film 1 3 and the reflective film 2 302 can also be composed of a multi-layer thin film layer structure. For example, each layer of the Bragg structure film is alternately formed by two materials with different refractive indices, and the thickness of each layer is 1 / 4 of the central wavelength, which is generally the middle wavelength of the spectral band, such as 550nm. The use of the Bragg structure reflective film 1 3 and the reflective film 2 302 can ensure a higher reflectivity where R>90%, thereby obtaining a more refined output wavelength tuning effect. The structure implemented using this thin film can also be compatible with CMOS-based systems, and the output wavelength can be accurately adjusted by voltage.

[0026] Example 4: Reference Figure 1 - Figure 7A module board 7 is connected below the substrate 1, and a circuit board, a control module, and an electrical connection port 1 701 and an electrical connection port 2 702 are integrated on the module board 7. The module board 7 is provided to facilitate the splicing and combination of adjacent pixel-level MEMS structures; After the adjacent pixel-level MEMS structures are installed, the adjacent electrical connection ports 1 701 and 2 702 can be connected via wires.

[0027] Example 5: Reference Figure 1 - Fig.12 A module mounting plate 8 is also provided below the substrate 1. The module mounting plate 8 is provided with a groove to facilitate the insertion of the module plate 7. A slot 802 is provided around the groove. An insert plate 801 is fixedly connected to the periphery of the substrate 1. A limiting block 804 is fixedly connected to the bottom end of the insert plate 801. The outer wall of the plugboard 801 is slidably connected to the inner wall of the slot 802, and a limiting block 804 is fixedly connected to the bottom end of the plugboard 801. A card slot 803 is provided at the bottom end of the slot 802. The inner wall of the card slot 803 is slidably connected to the outer wall of the limiting block 804. When installing the substrate 1, the limiting block 804 is inserted into the slot 802. At this time, the plugboard 801 will bend and deform. After the limiting block 804 passes through the slot 802, it will be stuck in the card slot 803 to limit the substrate 1. Example 6: Reference Figure 1 - Fig.12 , connecting through wires is an extra process after all, which affects assembly. For this reason, a series metal sheet 10 is fixedly installed at the bottom end of the module mounting plate 8, and a series ejector pin 9 is electrically connected to the module plate 7. The bottom end of the series ejector pin 9 contacts the top end of the series metal sheet 10 to achieve intercommunication; Further, the series ejector pin 9 includes an ejector seat 901, the inner wall of the ejector seat 901 is slidably connected with a sliding sleeve 903, the bottom end of the sliding sleeve 903 is fixedly connected with an ejector pin 902, the bottom end of the ejector pin 902 contacts the top end of the series metal sheet 10, the inner wall of the sliding sleeve 903 is fixedly connected with an insulating spring 905, the top end of the insulating spring 905 is fixedly connected with the top end of the inner wall of the sliding sleeve 903, the bottom end of the ejector seat 901 is provided with a sliding hole 904, and the inner wall of the sliding hole 904 is slidably connected with the outer wall of the ejector pin 902; When in use, the top seat 901, the sliding sleeve 903, and the ejector pin 902 are made of conductive metal. The substrate 1 is installed, and the bottom end of the series ejector pin 9 will contact the top end of the series metal sheet 10. After the two are in contact, the circuit will be connected, which is convenient for installation.

[0028] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A pixel-level MEMS structure, characterized in that: include: A substrate (1) and a light source (2), wherein the substrate (1) is located below the light source (2); A pixel structure, the pixel structure is located above the light source (2); The pixel structure comprises: a reflective film 1 (3), the reflective film 1 (3) being located above a light source (2), a reflective film 2 (302) being provided above the reflective film 1 (3), a support layer (4) being provided between the reflective film 1 (3) and the reflective film 2 (302), and a closed optical Fabry-Perot cavity being formed between the reflective film 1 (3), the reflective film 2 (302) and the inner wall of the support layer (4).

2. A pixel-level MEMS structure according to claim 1, characterized in that: A metal electrode circuit (6) is provided between the reflective film 1 (3) and the reflective film 2 (302).

3. A pixel-level MEMS structure according to claim 2, characterized in that: The metal electrode circuit (6) comprises a metal sheet 1 (601) and a metal sheet 2 (602), wherein the metal sheet 1 (601) is installed below the reflective film 1 (3), and the metal sheet 2 (602) is installed above the reflective film 2 (302).

4. A pixel-level MEMS structure according to claim 3, characterized in that: A module board (7) is connected below the base plate (1), and a circuit board, a control module, and an electrical connection port 1 (701) and an electrical connection port 2 (702) are integrated on the module board (7).

5. A pixel-level MEMS structure according to claim 4, characterized in that: A module mounting plate (8) is also provided below the base plate (1), the module mounting plate (8) being provided with a groove for facilitating the insertion of the module plate (7), a slot (802) being provided around the groove, an insert plate (801) being fixedly connected around the base plate (1), and a limiting block (804) being fixedly connected at the bottom end of the insert plate (801).

6. A pixel-level MEMS structure according to claim 5, characterized in that: The outer wall of the plug plate (801) is slidably connected to the inner wall of the slot (802); a limiting block (804) is fixedly connected to the bottom end of the plug plate (801); a card slot (803) is provided at the bottom end of the slot (802); and the inner wall of the card slot (803) is slidably connected to the outer wall of the limiting block (804).

7. A method for using a pixel-level MEMS, applied to a pixel-level MEMS structure according to claim 3, characterized in that: The following steps are also included: S1: placing a substrate (1) below the light source (2), mainly to provide support and fixation for the light source (2) and the pixel structure; S2: After passing through the reflective film 1 (3), the light emitted by the light source (2) enters the optical Fabry-Perot cavity formed between the reflective film 1 (3), the reflective film 2 (302) and the inner wall of the support layer (4).

8. A method for using pixel-level MEMS according to claim 7, characterized in that: After the light source in step S2 enters the optical Fabry-Perot cavity, it undergoes multiple reflections between the reflective film 1 (3) and the reflective film 2 (302) and finally emits from the reflective film 2 (302). This is a tunable filter structure designed using the optical interference principle.

9. A method for using pixel-level MEMS according to claim 8, characterized in that: When the metal sheet 1 (601) and the metal sheet 2 (602) in the metal electrode circuit (6) are in use, a certain voltage difference V is applied, and an electrostatic effect is generated through the upper and lower electrodes under the action of the voltage.

10. A method for using pixel-level MEMS according to claim 9, characterized in that: The electrostatic effect described above generates an upward or downward electrostatic force at the locations of the metal sheet 1 (601) and the metal sheet 2 (602), thereby driving a change in the thickness D of the air gap between the two reflective films.

Images