Compatible high-precision resist stripping liquid composition

Abstract

The invention discloses a compatible high-precision resist stripping liquid composition. The composition comprises organic amine, a protonic organic solvent, a non-protonic organic solvent, an additive and a surfactant, the additive comprises an Al corrosion inhibitor, a metal potential regulator and a surface hydrophilicity improver; the resist stripping liquid composition is environment-friendly in component, the used organic amine has a strong attack effect on photoresist and good stripping performance, the combination of the protonic organic solvent and the aprotic organic solvent is beneficial to enhancing the dissolution and cleaning performance of the stripping liquid on the photoresist, the precipitation of the photoresist in the stripping and washing processes is reduced, and the stripping quality of the photoresist is improved. The service life of liquid medicine is prolonged. The three additives have a good synergistic effect, the photoresist is not easy to adhere to the surface of an ITO process layer and the like in the stripping and washing processes, the stripping liquid does not corrode a Cu film layer or an Al film layer, the compatibility of the stripping liquid to multiple processes such as a Cu process, an Al process and an ITO process is ensured, the complexity of a production line process is effectively reduced, and the production cost is reduced.

Description

Technical Field

[0001] The invention relates to the technical field of stripping solution production, and in particular to a highly compatible and fine resist stripping solution composition. Background Art

[0002] In the prior art, some stripping liquid formulas contain sulfone or sulfoxide organic solvents. Although they meet the stripping performance requirements, such solvents are prone to environmental pollution and do not meet environmental protection requirements. Moreover, with the development of display technology, panel processes tend to be refined, and the requirements for the refinement of stripping liquid formulas are becoming higher and higher. At present, most stripping liquids use low-pollution ingredients, and the selection of organic amines and organic solvents has tended to be homogenized. The differences in stripping liquid formulas are mainly concentrated in the selection and application of additives and surfactants, but the performance of some additives is single, which may lead to deficiencies in other properties of the stripping liquid. In addition, since the application of stripping liquid in the display panel manufacturing process is mostly spray-type, the requirements for the dynamic surface tension of the stripping liquid are gradually increasing, especially for high-precision, low-linewidth high-generation TFT-LCD and AMOLED production lines.

[0003] In the prior art, patent CN202311113226.8 discloses a photoresist stripping device that avoids parasitic gate effects and diagonal Mura. The photoresist stripping device is provided with a drying interval, a stripping interval, a hot water washing interval, a supercooled water washing interval, and an air drying interval in sequence according to the transmission direction of the substrate. However, the device is very different from the existing production line device, and modification will increase the equipment cost and time cost. Patent CN201580012365.9 discloses a stripper composition for removing photoresist and a method for stripping photoresist using the same. The stripping solution contains triazole compounds and benzimidazole compounds, which can effectively prevent corrosion of Cu and Mo. However, the stripping solution can only be used for Cu processes, and cannot be used for Al processes or ITO processes. This requires different stripping solutions to be used for different processes on the production line, and the stripping solution process compatibility is poor, which greatly increases the complexity of the production line process. Patent CN200810092008.X discloses a photoresist stripping composition and a method for stripping a photoresist film using the same, wherein the stripping solution contains 0.1% to about 5% by weight of a phenol ethoxy-type nonionic surfactant. Patent CN201910603572.1 discloses a highly selective stripping solution, wherein the composition contains 0.01-5.00% by weight of a surfactant, wherein the surfactant is a tetrasiloxane gemini surfactant containing a sugar amide group. Patent CN201910061476.9 discloses a water-based photoresist stripping solution for display panels and semiconductor fields, 2% to 8% by weight of a gemini-type alkyl glycoside surfactant, which has strong wetting and penetration properties and can effectively improve the stripping performance of the stripping solution. At the same time, the surfactant has a certain corrosion resistance and can form a good synergistic effect with the corrosion inhibitor to prevent the corrosion of the substrate and Cu metal wiring. Regarding the use of surfactants, although most of the non-ionic surfactants used in the prior art are beneficial to reducing the amount of metal ions introduced, the currently used phenol ethoxy non-ionic surfactants, sugar amide-based tetrasiloxane gemini surfactants and gemini-type alkyl glycoside surfactants have large molecular weights and are prone to foaming. During the actual use of the stripping solution, the stripping properties of the stripping solution will be greatly reduced, resulting in photoresist residues. On the other hand, the large molecular weight of the surfactant may affect the hydrophilicity, and it may precipitate and cause residues during the water washing process at the back end of the stripping process. Moreover, it can basically only reduce the static surface tension, which is difficult to meet the requirements of high-precision, low-linewidth, high-generation TFT-LCD and AMOLED production lines. Summary of the invention

[0004] The object of the present invention is to provide a highly compatible resist stripping solution composition to overcome the deficiencies in the prior art.

[0005] To achieve the above object, the present invention provides the following technical solutions: The present application discloses a highly compatible resist stripping liquid composition, comprising 2 to 8% by weight of an organic amine, 25 to 70% by weight of a protic organic solvent, 25 to 70% by weight of an aprotic organic solvent, 0.3 to 3% by weight of an additive and 0.1 to 0.5% by weight of a surfactant; the additive comprises 0.1 to 1% by weight of an Al corrosion inhibitor, 0.1 to 1% by weight of a metal potential regulator and 0.1 to 1% by weight of a surface hydrophilicity improver.

[0006] Preferably, the Al corrosion inhibitor is a compound containing a hydroxyl group, including one or more of ethyl gallate, 3-tert-butylphenol and tert-butylcatechol.

[0007] Preferably, the metal potential regulator is ammonium pyrophosphate.

[0008] Preferably, the surface hydrophilicity improving agent is an amino acid ammonium salt containing a hydroxyl group, including one or more of L-threonine ammonium, serine ammonium, and tyrosine ammonium.

[0009] Preferably, the organic amine is one or more of methyldiethanolamine, (2-aminoethoxy)-1-ethanol, hydroxyethylethylenediamine, monoethanolamine, diethanolamine and triethanolamine.

[0010] Preferably, the protic organic solvent is selected from one or more of diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether and ethylene glycol monobutyl ether.

[0011] Preferably, the aprotic organic solvent is selected from one or more of N-methylformamide, N,N-dimethylpropionamide, N-ethylformamide, and N,N-diethylformamide.

[0012] Preferably, the surfactant is an aniline polyoxyethylene ether nonionic Gemini surfactant, the structure of which is: , where R=C1-C2, n=4~7.

[0013] Beneficial effects of the present invention: 1. The composition of the resist stripping solution is environmentally friendly, the organic amine used has a strong attack effect on the photoresist, and the stripping performance is good. The combined use of protic organic solvents and aprotic organic solvents is conducive to enhancing the dissolution and cleaning performance of the stripping solution for the photoresist, reducing the precipitation of the photoresist during the stripping and washing process, and improving the service life of the liquid. In addition, the organic matter selected in the present invention is easy to recycle and has a high recycling rate, which is conducive to reducing the cost of the stripping solution. There is a good synergistic effect between the three types of additives. During the stripping and washing process, the photoresist is not easy to adhere to the surface of the process layer such as ITO. The stripping solution has no corrosion to the Cu film layer or the Al film layer, ensuring the compatibility of the stripping solution with multiple processes such as the Cu process, the Al process and the ITO process. There is no need to modify the existing equipment, effectively reducing the complexity of the production line process and reducing the production cost.

[0014] 2. The stripping solution uses a small molecule non-ionic Gemini surfactant, which has no metal ion precipitation and can effectively reduce the static and dynamic surface tension of the stripping solution, generate fewer bubbles and have a certain defoaming effect, enhance the photoresist removal ability and uniformity of the stripping solution, and improve its fineness. In addition, the surfactant will not precipitate when washed with water, and is easily biodegradable, more environmentally friendly, and can also have a certain synergistic effect with the third type of additives to prevent the adhesion of the photoresist on the surface of the process layer. After the surfactant moves from the bulk phase to the surface phase to establish equilibrium, it effectively reduces the surface tension and reduces the contact angle to improve wettability. This establishment process requires a certain amount of time. Therefore, the static surface tension cannot reflect the wetting situation during dynamic use. The low dynamic surface tension indicates that the equilibrium establishment time is short, and the contact angle can be quickly reduced during dynamic use to improve wettability. Therefore, the surfactant used in the present invention can effectively reduce the dynamic surface tension and improve wettability, and can meet the use requirements of high-precision processes.

[0015] The features and advantages of the present invention will be described in detail through embodiments. DETAILED DESCRIPTION

[0016] In order to make the purpose, technical scheme and advantages of the present invention clearer, the present invention is further described in detail below through embodiments. However, it should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the scope of the present invention. In addition, in the following description, the description of known structures and technologies is omitted to avoid unnecessary confusion of the concept of the present invention.

[0017] Example 1 The present embodiment provides a high-compatibility resist stripping liquid composition, comprising 3.1% by weight of an organic amine, 25.7% by weight of a protic organic solvent, 70% by weight of an aprotic organic solvent, 0.3% by weight of a surfactant; 0.2% by weight of an Al corrosion inhibitor, 0.5% by weight of a metal potential regulator, and 0.2% by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is ethyl gallate; the metal potential regulator is ammonium pyrophosphate; the surface hydrophilicity improver is ammonium L-threonine; the organic amine is methyldiethanolamine; the protic organic solvent is diethylene glycol monomethyl ether; the aprotic organic solvent is N-methylformamide; the surfactant is an aniline polyoxyethylene ether nonionic Gemini surfactant; and its structure is: , where R=C1-C2, n=4~7.

[0018] Example 2 The present embodiment provides a high-precision resist stripping liquid composition with compatibility, comprising 2.0% by weight of an organic amine, 70% by weight of a protic organic solvent, 25% by weight of an aprotic organic solvent, 0.2% by weight of a surfactant; 1.0% by weight of an Al corrosion inhibitor, 0.7% by weight of a metal potential regulator, and 0.8% by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is 3-tert-butylphenol; the metal potential regulator is ammonium pyrophosphate; the surface hydrophilicity improver is ammonium serine; the organic amine is (2-aminoethoxy)-1-ethanol; the protic organic solvent is diethylene glycol monobutyl ether; the aprotic organic solvent is N,N-dimethylpropionamide; the surfactant is an aniline polyoxyethylene ether nonionic Gemini surfactant; and its structure is: , where R=C1-C2, n=4~7.

[0019] Example 3 The present embodiment provides a highly compatible resist stripping liquid composition, comprising 4.5% by weight of an organic amine, 25% by weight of a protic organic solvent, 68.3% by weight of an aprotic organic solvent, 0.5% by weight of a surfactant; 0.3% by weight of an Al corrosion inhibitor, 0.4% by weight of a metal potential regulator, and 1.0% by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is tert-butyl catechol; the metal potential regulator is ammonium pyrophosphate; the surface hydrophilicity improver is ammonium tyrosine; the organic amine is hydroxyethylethylenediamine; the protic organic solvent is diethylene glycol monoethyl ether; the aprotic organic solvent is N-ethylformamide; the surfactant is an aniline polyoxyethylene ether nonionic Gemini surfactant; and its structure is: , where R=C1-C2, n=4~7.

[0020] Example 4 The present embodiment provides a high-compatibility resist stripping liquid composition, comprising 7.6% by weight of an organic amine, 40% by weight of a protic organic solvent, 50.6% by weight of an aprotic organic solvent, 0.1% by weight of a surfactant; 0.6% by weight of an Al corrosion inhibitor, 1.0% by weight of a metal potential regulator, and 0.1% by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is ethyl gallate; the metal potential regulator is ammonium pyrophosphate; the surface hydrophilicity improver is ammonium L-threonine; the organic amine is monoethanolamine; the protic organic solvent is diethylene glycol monopropyl ether; the aprotic organic solvent is N,N-diethylformamide; the surfactant is an aniline polyoxyethylene ether nonionic Gemini surfactant; and its structure is: , where R=C1-C2, n=4~7.

[0021] Example 5 The present embodiment provides a highly compatible resist stripping liquid composition, comprising 4.0% by weight of an organic amine, 51.2% by weight of a protic organic solvent, 43.1% by weight of an aprotic organic solvent, 0.2% by weight of a surfactant; 0.1% by weight of an Al corrosion inhibitor, 0.6% by weight of a metal potential regulator, and 0.8% by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is 3-tert-butylphenol; the metal potential regulator is ammonium pyrophosphate; the surface hydrophilicity improver is ammonium serine; the organic amine is diethanolamine; the protic organic solvent is ethylene glycol monomethyl ether; the aprotic organic solvent is N,N-dimethylpropionamide; the surfactant is an aniline polyoxyethylene ether nonionic Gemini surfactant; and its structure is: , where R=C1-C2, n=4~7.

[0022] Example 6 The present embodiment provides a highly compatible resist stripping liquid composition, comprising 8.0% by weight of an organic amine, 41.8% by weight of a protic organic solvent, 48.3% by weight of an aprotic organic solvent, 0.4% by weight of a surfactant; 0.9% by weight of an Al corrosion inhibitor, 0.1% by weight of a metal potential regulator, and 0.5% by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is tert-butyl catechol; the metal potential regulator is ammonium pyrophosphate; the surface hydrophilicity improver is ammonium tyrosine; the organic amine is triethanolamine; the protic organic solvent is ethylene glycol monopropyl ether; the aprotic organic solvent is N-ethylformamide; the surfactant is an aniline polyoxyethylene ether nonionic Gemini surfactant; and its structure is: , where R=C1-C2, n=4~7.

[0023] Example 7 The present embodiment provides a high-precision resist stripping liquid composition with compatibility, comprising 5.0% by weight of an organic amine, 45% by weight of a protic organic solvent, 48% by weight of an aprotic organic solvent, 0.3% by weight of a surfactant; 0.7% by weight of an Al corrosion inhibitor, 0.6% by weight of a metal potential regulator, and 0.4% by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is ethyl gallate; the metal potential regulator is ammonium pyrophosphate; the surface hydrophilicity improver is ammonium L-threonine; the organic amine is methyldiethanolamine; the protic organic solvent is diethylene glycol monomethyl ether; the aprotic organic solvent is N-methylformamide; the surfactant is an aniline polyoxyethylene ether nonionic Gemini surfactant; and its structure is: , where R=C1-C2, n=4~7.

[0024] Comparative Example 1: The present embodiment provides a high-precision resist stripping liquid composition with compatibility, comprising 1.0% by weight of an organic amine, 43% by weight of a protic organic solvent, 54% by weight of an aprotic organic solvent, 0.3% by weight of a surfactant; 0.7% by weight of an Al corrosion inhibitor, 0.6% by weight of a metal potential regulator, and 0.4% by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is ethyl gallate; the metal potential regulator is ammonium pyrophosphate; the surface hydrophilicity improver is ammonium L-threonine; the organic amine is methyldiethanolamine; the protic organic solvent is diethylene glycol monomethyl ether; the aprotic organic solvent is N-methylformamide; the surfactant is an aniline polyoxyethylene ether nonionic Gemini surfactant; and its structure is: , where R=C1-C2, n=4~7.

[0025] Comparative Example 2 The present embodiment provides a high-precision resist stripping liquid composition with compatibility, comprising 5.0% by weight of an organic amine, 23% by weight of a protic organic solvent, 70% by weight of an aprotic organic solvent, 0.3% by weight of a surfactant; 0.7% by weight of an Al corrosion inhibitor, 0.6% by weight of a metal potential regulator, and 0.4% by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is ethyl gallate; the metal potential regulator is ammonium pyrophosphate; the surface hydrophilicity improver is ammonium L-threonine; the organic amine is methyldiethanolamine; the protic organic solvent is diethylene glycol monomethyl ether; the aprotic organic solvent is N-methylformamide; the surfactant is an aniline polyoxyethylene ether nonionic Gemini surfactant; and its structure is: , where R=C1-C2, n=4~7.

[0026] Comparative Example 3 The present embodiment provides a high-compatibility resist stripping liquid composition, comprising 5.0% by weight of an organic amine, 70% by weight of a protic organic solvent, 23% by weight of an aprotic organic solvent, 0.3% by weight of a surfactant; 0.7% by weight of an Al corrosion inhibitor, 0.6% by weight of a metal potential regulator, and 0.4% by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is ethyl gallate; the metal potential regulator is ammonium pyrophosphate; the surface hydrophilicity improver is ammonium L-threonine; the organic amine is methyldiethanolamine; the protic organic solvent is diethylene glycol monomethyl ether; the aprotic organic solvent is N-methylformamide; the surfactant is an aniline polyoxyethylene ether nonionic Gemini surfactant; and its structure is: , where R=C1-C2, n=4~7.

[0027] Comparative Example 4 The present embodiment provides a high-precision resist stripping liquid composition with compatibility, comprising 5.0% by weight of an organic amine, 45% by weight of a protic organic solvent, 48.7% by weight of an aprotic organic solvent, 0.3% by weight of a surfactant, 0.6% by weight of a metal potential regulator, and 0.4% by weight of a surface hydrophilicity improver; wherein the metal potential regulator is ammonium pyrophosphate; the surface hydrophilicity improver is ammonium L-threonine; the organic amine is methyldiethanolamine; the protic organic solvent is diethylene glycol monomethyl ether; the aprotic organic solvent is N-methylformamide; the surfactant is an aniline polyoxyethylene ether nonionic Gemini surfactant; and its structure is: , where R=C1-C2, n=4~7.

[0028] Comparative Example 5 The present embodiment provides a highly compatible resist stripping liquid composition, comprising 5.0% by weight of an organic amine, 45% by weight of a protic organic solvent, 48.6% by weight of an aprotic organic solvent, 0.3% by weight of a surfactant; 0.7% by weight of an Al corrosion inhibitor and 0.4% by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is ethyl gallate; the surface hydrophilicity improver is ammonium L-threonine; the organic amine is methyldiethanolamine; the protic organic solvent is diethylene glycol monomethyl ether; the aprotic organic solvent is N-methylformamide; the surfactant is an aniline polyoxyethylene ether nonionic Gemini surfactant; and its structure is: , where R=C1-C2, n=4~7.

[0029] Comparative Example 6 The present embodiment provides a highly compatible resist stripping liquid composition, comprising 5.0% by weight of an organic amine, 45% by weight of a protic organic solvent, 48.4% by weight of an aprotic organic solvent, 0.3% by weight of a surfactant; 0.7% by weight of an Al corrosion inhibitor, and 0.6% by weight of a metal potential regulator; wherein the Al corrosion inhibitor is ethyl gallate; the metal potential regulator is ammonium pyrophosphate; the organic amine is methyldiethanolamine; the protic organic solvent is diethylene glycol monomethyl ether; the aprotic organic solvent is N-methylformamide; the surfactant is an aniline polyoxyethylene ether nonionic Gemini surfactant; and its structure is: , where R=C1-C2, n=4~7.

[0030] Comparative Example 7 The present embodiment provides a highly compatible and fine resist stripping liquid composition, comprising 5.0% by weight of an organic amine, 45% by weight of a protic organic solvent, and 48.3% by weight of an aprotic organic solvent; 0.7% by weight of an Al corrosion inhibitor, 0.6% by weight of a metal potential regulator, and 0.4% by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is ethyl gallate; the metal potential regulator is ammonium pyrophosphate; the surface hydrophilicity improver is L-ammonium threonine; the organic amine is methyldiethanolamine; the protic organic solvent is diethylene glycol monomethyl ether; and the aprotic organic solvent is N-methylformamide.

[0031] The experimental description of the embodiment and comparative example: The experimental object of the resist stripping liquid composition is the glass sheets to be stripped in the Al process, Cu process, and ITO process of the panel production line. The resist stripping liquid composition is used for spray treatment at 60°C for 180s, and then the remaining stripping liquid on the surface of the glass sheet is blown dry and rinsed with high-purity water spray for 120s. Finally, the glass sheet is blown dry with high-purity nitrogen, and the photoresist residue and metal corrosion are observed under an optical microscope and an electron scanning microscope. The stripping liquid continuously treats the glass sheet for 24h or 800 pieces, and the resist residue and metal layer process corrosion are comprehensively evaluated, as shown in Table 1-4: Table 1 shows the results of resist stripping by the resist stripping liquid composition. Table 2: Residue of the resist stripping solution composition of Examples 1-7 and Comparative Examples 1-7 Table 3 shows the corrosion of metal layer in the resist stripping solution composition process Table 4 shows the corrosion evaluation table of the resist stripping solution compositions of Examples 1-7 and Comparative Examples 1-7 on aluminum process and copper process In the above embodiments, compared with Example 7, Comparative Example 1 has a lower organic amine content and insufficient stripping ability, and a large amount of resists remain after the three processes are stripped; compared with Example 7, Comparative Example 2 and Comparative Example 3 have lower protic organic solvent or non-protic organic solvent content, and the dissolution and cleaning performance of the resist is slightly insufficient, resulting in a small amount of resists remaining after the three processes are stripped; Compared with Example 7, Comparative Example 4 does not add Al corrosion inhibitor, and the protective effect on the Al process metal layer is insufficient, and the Al process metal layer is severely corroded during the use of the stripping solution; Compared with Example 7, Comparative Example 5 does not add a metal potential regulator, lacks the metal layer potential regulating effect, and lacks the interaction with the Al corrosion inhibitor and the surface hydrophilicity improver. The synergistic effect between the surface hydrophilicity improver and the metal potential regulator is insufficient to protect the Al and Cu process metal layers. During the use of the stripping solution, the Al process metal layer is slightly corroded, and the Cu process metal layer is severely corroded. Compared with Example 7, Comparative Example 6 does not add a surface hydrophilicity improver. During the use of the stripping solution, the photoresist is easily adhered to the ITO process surface, resulting in a small amount of residual resist after the ITO process is stripped. On the other hand, due to the lack of synergistic effect between the surface hydrophilicity improver and the metal potential regulator, the corrosion inhibition of the Cu process is insufficient, and a small amount of corrosion occurs during the stripping process. Compared with Example 7, Comparative Example 7 does not add a surfactant, the stripping solution has a high dynamic surface tension, a large contact angle, and insufficient wettability, resulting in a large amount of residual resist after the three processes are stripped.

[0032] In summary, the organic amine of the present invention selects chain alkanolamine, which has high cohesive energy and strong attack effect on photoresist, which is beneficial to enhance the stripping ability of the stripping solution; protic organic solvents and non-protic organic solvents are beneficial to enhance the dissolution rate and total amount of photoresist. The combination of the two can effectively enhance the dissolution performance and cleaning performance of photoresist, reduce the precipitation of photoresist during stripping and washing, meet the high refinement requirements of the stripping solution, and improve the service life of the solution. The first type of additives are mainly hydroxyl-containing compounds, which can be adsorbed on the surface of the Al metal layer and have a good corrosion inhibition effect on Al; the second type of additives are metal potential regulators, which can effectively adjust the metal potential of Cu / Mo and Al / Mo, thereby reducing the corrosion of Cu or Al; ammonium pyrophosphate, which contains hydroxyl groups in its structure, can be adsorbed on the Al surface, thereby adjusting the Al / Mo potential; in addition, its pyrophosphate group can form a complex structure with Cu, thereby effectively adjusting the potential of Cu / Mo; the third type of additives are surface hydrophilic improvers, which contain amino and hydroxyl groups in their structure, and the hydroxyl groups can react with I The TO surface forms hydrogen bonds, while the other end of the molecule is an ammonium group and an amino group, which has good water solubility, thus improving the hydrophilicity of the ITO surface and reducing its lipophilicity, and can effectively prevent the adhesion of lipophilic photoresists during stripping and washing; in addition, the ammonium salt structure can prevent the carboxyl group from interacting with the organic amine and affecting its stripping performance; the second type of additives can produce a synergistic effect with the first type of additives to minimize the corrosion of Al, and the third type of additives has a nitrogen-containing group, which is easy to adsorb on the Cu surface, thereby producing a synergistic effect with the second type of additives to minimize the corrosion of Cu to meet the electrical performance requirements of the process. The combined use of these three types of additives can ensure the compatibility of the stripping solution for Cu process, Al process and ITO process. The surfactant selected is a non-ionic Gemini surfactant of aniline polyoxyethylene ether, which can effectively reduce the static and dynamic surface tension of the stripping solution, reduce the contact angle of the stripping solution to the photoresist film layer, increase the contact area of ​​the stripping solution, and promote the stripping of the photoresist. It can also play a good role when the process line width is small, ensuring the uniformity of the stripping solution in removing the photoresist and improving its fineness; in addition, it has a small molecular weight, produces less bubbles, and has a certain defoaming effect, which is beneficial to further improve the stripping performance of the stripping solution and improve its fineness. In addition, the surfactant has a large molecular space and has a certain synergistic effect with the third type of additives to prevent the photoresist from adhering to the surface of the process layer.

[0033] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modification, equivalent substitution or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A high-precision resist stripping liquid composition having compatibility, characterized in that: The invention comprises 2-8% by weight of an organic amine, 25-70% by weight of a protic organic solvent, 25-70% by weight of an aprotic organic solvent, 0.3-3% by weight of an additive and 0.1-0.5% by weight of a surfactant; the additive comprises 0.1-1% by weight of an Al corrosion inhibitor, 0.1-1% by weight of a metal potential regulator and 0.1-1% by weight of a surface hydrophilicity improver.

2. A highly compatible resist stripping solution composition according to claim 1, characterized in that: The Al corrosion inhibitor is a compound containing a hydroxyl group, including one or more of ethyl gallate, 3-tert-butylphenol and tert-butylcatechol.

3. The high-precision resist stripping liquid composition according to claim 1, characterized in that: The metal potential regulator is ammonium pyrophosphate.

4. The high-precision resist stripping liquid composition according to claim 1, characterized in that: The surface hydrophilicity improving agent is an amino acid ammonium salt containing a hydroxyl group, including one or more of L-threonine ammonium, serine ammonium, and tyrosine ammonium.

5. The high-definition resist stripping liquid composition according to claim 1, characterized in that: The organic amine is selected from one or more of methyldiethanolamine, (2-aminoethoxy)-1-ethanol, hydroxyethylethylenediamine, monoethanolamine, diethanolamine and triethanolamine.

6. The high-definition resist stripping liquid composition according to claim 1, characterized in that: The protic organic solvent is selected from one or more of diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether and ethylene glycol monobutyl ether.

7. The high-definition resist stripping liquid composition according to claim 1, characterized in that: The aprotic organic solvent is selected from one or more of N-methylformamide, N,N-dimethylpropionamide, N-ethylformamide, and N,N-diethylformamide.

8. The high-definition resist stripping liquid composition according to claim 1, characterized in that: The surfactant is a phenolic polyoxyethylene ether nonionic Gemini surfactant, and its structure is: , where R=C1-C2, n=4~7.

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