A memory

Abstract

The present invention provides a memory, comprising: a packaging substrate, connected with a main control module, a flash memory module, a power supply module, a plurality of unconnected pins, and a plurality of solder balls, wherein the unconnected pins are connected with some of the solder balls; a current switching module, electrically connected with the power supply module; at least one semiconductor temperature control module, the semiconductor temperature control module comprising: a first substrate, located at the periphery of the main control module and the flash memory module; a second substrate, disposed opposite to the first substrate, and the second substrate is connected with the unconnected pins; a semiconductor temperature control array unit, formed between the first substrate and the second substrate; wherein, the current switching module is further electrically connected with the semiconductor temperature control array unit, and is configured to adjust the current flow direction in the semiconductor temperature control array unit according to the control signal of the main control module, so as to control the semiconductor temperature control array unit to refrigerate or heat. Through the memory provided by the present invention, it can work normally under extreme temperature conditions.

Description

Technical Field

[0001] The present invention relates to the field of storage, and particularly to a memory device. Background Art

[0002] The reliability problem of the embedded storage device eMMC in extreme temperature environments has long restricted its application expansion. In the prior art, high temperatures exacerbate charge leakage in memory cells, leading to a decline in data retention ability and an increase in the error rate, while low temperatures cause programming / erasing voltage threshold drift, resulting in abnormal write operations. At the same time, the controller is prone to clock timing mismatch when the temperature is extreme, leading to the risk of state machine jumps or deadlocks. The thermal expansion differences of packaging materials also accelerate the mechanical fatigue of solder joints.

[0003] Existing solutions alleviate the problem through means such as hierarchical screening (commercial grade, industrial grade, automotive grade, military grade) or frequency reduction, but face significant defects such as a sharp increase in cost, volume expansion, or performance degradation, and it is difficult to meet the comprehensive requirements of scenarios such as in-vehicle electronics for a wide temperature range, high reliability, and miniaturization. Therefore, there is room for improvement. Summary of the Invention

[0004] The purpose of the present invention is to provide a memory device that can operate normally under extreme temperature conditions.

[0005] To solve the above technical problems, the present invention is implemented through the following technical solutions:

[0006] The present invention provides a memory device, including:

[0007] A package substrate, on one side of which a main control module, a flash memory module, a power supply module, and a plurality of unconnected pins are connected. On the other side of the package substrate, a plurality of solder balls are connected, and the unconnected pins are connected to some of the solder balls;

[0008] A current switching module, electrically connected to the power supply module;

[0009] At least one semiconductor temperature control module, the semiconductor temperature control module including:

[0010] A first substrate, located around the main control module and the flash memory module;

[0011] A second substrate, disposed opposite to the first substrate, and the second substrate is connected to the unconnected pins;

[0012] A semiconductor temperature control array unit, formed between the first substrate and the second substrate;

[0013] Wherein, the current switching module is also electrically connected to the semiconductor temperature control array unit, and is configured to adjust the current flow direction in the semiconductor temperature control array unit according to the control signal of the main control module, so as to control the refrigeration or heating of the semiconductor temperature control array unit.

[0014] In an embodiment of the present invention, the semiconductor temperature control array unit includes a plurality of arrays of semiconductor temperature control units; two adjacent semiconductor temperature control units are connected in series; the semiconductor temperature control unit includes:

[0015] A first current-carrying strip, which is attached to the second substrate;

[0016] A P-type semiconductor structure, which is electrically connected to the first current-carrying strip;

[0017] A second current-carrying strip, which is attached to the first substrate and is electrically connected to the P-type semiconductor structure;

[0018] An N-type semiconductor structure, which is electrically connected to the second current-carrying strip; and

[0019] A third current-carrying strip, which is attached to the second substrate and is electrically connected to the N-type semiconductor structure;

[0020] Wherein, there is a gap between the first current-carrying strip and the third current-carrying strip.

[0021] In an embodiment of the present invention, the control signal includes a first signal and a second signal, and the current switching module includes:

[0022] A first switching circuit, which is electrically connected to the main control module and the semiconductor temperature control array unit; the first switching circuit is configured to conduct according to the first signal and supply power to the semiconductor temperature control array unit; and

[0023] A second switching circuit, which is electrically connected to the main control module and the semiconductor temperature control array unit; the second switching circuit is configured to conduct according to the second signal and supply power to the semiconductor temperature control array unit;

[0024] Wherein, the current flow direction in the semiconductor temperature control array unit of the first switching circuit is denoted as a first direction, the current flow direction in the semiconductor temperature control array unit of the second switching circuit is denoted as a second direction, and the first direction and the second direction are opposite.

[0025] In an embodiment of the present invention, the semiconductor temperature control array unit includes a first power supply terminal and a second power supply terminal; the first switching circuit includes:

[0026] A first MOS transistor, whose gate is electrically connected to the main control module, whose source is electrically connected to the power supply module, and whose drain is electrically connected to the first power supply terminal; and

[0027] A second MOS transistor, whose gate is electrically connected to the main control module, whose source is electrically connected to the second power supply terminal, and whose drain is electrically connected to the ground pin of the package substrate;

[0028] Wherein, the first MOS transistor and the second MOS transistor are turned on according to a first signal.

[0029] In an embodiment of the present invention, the second switching circuit includes:

[0030] A third MOS transistor, whose gate is electrically connected to the main control module, whose source is electrically connected to the power supply module, and whose drain is electrically connected to the second power supply terminal; and

[0031] A fourth MOS transistor, whose gate is electrically connected to the main control module, whose source is electrically connected to the first power supply terminal, and whose drain is electrically connected to the ground pin of the package substrate;

[0032] Wherein, the third MOS transistor and the fourth MOS transistor are turned on according to a second signal.

[0033] In an embodiment of the present invention, the second substrate is connected to the unconnected pins through a heat-conducting material, and the unconnected pins are connected to some solder balls through a heat-conducting material.

[0034] In an embodiment of the present invention, the material of the first substrate is insulating ceramic, and the material of the second substrate is insulating ceramic.

[0035] In an embodiment of the present invention, it further includes a temperature sensing unit, and the temperature sensing unit is used to obtain the current temperature of the main control module and / or the flash memory module; the main control module is used to adjust the current temperature according to the following steps:

[0036] Judge the current temperature and the preset temperature range:

[0037] When the current temperature is outside the preset temperature range, the main control module generates and sends a control signal with a duty cycle of 100%;

[0038] When the current temperature is within the preset temperature range, the main control module adjusts the duty cycle of the control signal until the current temperature reaches the target temperature.

[0039] In an embodiment of the present invention, the main control module is used to adjust the duty cycle of the control signal according to the following steps:

[0040] Obtain the temperature change amount of the main control module and / or the flash memory module per unit time;

[0041] Judge the temperature change amount and the preset change threshold:

[0042] When the temperature change amount is greater than a preset change threshold, reduce the duty cycle of the control signal until the temperature change amount is less than or equal to the preset change threshold;

[0043] When the temperature change amount is less than or equal to the preset change threshold, maintain the duty cycle of the control signal until the current temperature reaches the target temperature.

[0044] In an embodiment of the present invention, the flash memory module includes a plurality of flash memory blocks; the main control module is used to perform data migration operations according to the following steps:

[0045] Obtain the temperature change data of the main control module and / or the flash memory module within a preset time period;

[0046] Judge the temperature change data and a preset temperature difference threshold:

[0047] When the temperature change data is greater than the preset temperature difference threshold, identify the data block for writing data within the preset time period; the main control module performs a data migration operation to write the data stored in the identified data block into an idle data block.

[0048] As described above, the present invention provides a memory, which significantly improves the comprehensive performance of the memory in an extreme temperature environment through the combination of an embedded semiconductor temperature control module and a dynamic control strategy. The semiconductor temperature control array unit is used to bidirectionally adjust the temperature (cooling / heating), and the current direction is reversed through the current switching module to achieve a fast response. The duty cycle is adaptively adjusted to accurately control the temperature of the main control / flash memory module, eliminating the high cost problem of the traditional hierarchical screening scheme. The integrated heat conduction path design and ceramic substrate packaging ensure efficient heat diffusion and reduce the volume. The data block dynamic migration mechanism is triggered through temperature sensing monitoring, and the data is transferred to a stable area during severe temperature fluctuations to avoid the increase in the error rate caused by charge leakage / threshold drift.

[0049] Of course, it is not necessary for any product implementing the present invention to achieve all the above-mentioned advantages simultaneously. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for describing the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention, and those of ordinary skill in the art can obtain other drawings without creative efforts based on these drawings.

[0051] Figure 1 It is a schematic diagram of a memory in an embodiment of the present invention;

[0052] Figure 2Schematic diagram of a current switching module in an embodiment of the present invention;

[0053] Figure 3 Schematic diagram of a semiconductor temperature control module in an embodiment of the present invention;

[0054] Figure 4 Schematic diagram of a semiconductor temperature control unit in an embodiment of the present invention.

[0055] In the figure:

[0056] 100, packaging substrate; 110, first power supply port; 120, second power supply port;

[0057] 200, main control module; 210, first output terminal; 220, second output terminal;

[0058] 300, flash memory module;

[0059] 400, current switching module;

[0060] 500, semiconductor temperature control module; 510, first substrate; 520, second substrate; 530, semiconductor temperature control array unit; 531, first power supply terminal; 532, second power supply terminal; 533, semiconductor temperature control unit; 5331, first current guiding strip; 5332, P-type semiconductor structure; 5333, second current guiding strip; 5334, N-type semiconductor structure; 5335, third current guiding strip. Detailed implementation manners

[0061] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. According to the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0062] Please refer to Figure 1 , the present invention discloses a memory that can operate stably under extreme temperature conditions (below -55°C or above 125°C). The memory can be an Embedded MultiMediaCard (eMMC) or a Universal Flash Storage (UFS). The memory can include a packaging substrate 100, a main control module 200, a flash memory module 300, a current switching module 400, a semiconductor temperature control module 500, a power supply module, and a temperature sensing unit. Among them, the main control module 200, the flash memory module 300, the current switching module 400, the semiconductor temperature control module 500, the power supply module, and the temperature sensing unit can be connected to the packaging substrate 100.

[0063] In some embodiments, the packaging substrate 100 may be a common substrate in a memory, used for mounting and connecting various electronic components. A plurality of not connected (NC) pins may be connected to the packaging substrate 100. The not connected pins refer to the pins on the packaging substrate 100 that are not connected to other circuits or components in the design. The not connected pins can be used for future expansion or debugging. A plurality of solder balls are connected to the other side of the packaging substrate 100. The solder balls can serve as an interface for connecting the packaging substrate 100 to an external circuit or device. The solder balls are located on the other side of the packaging substrate, providing electrical connection and mechanical support.

[0064] In some embodiments, some of the not connected pins and some of the solder balls may be connected through a thermal conductive material. The role of the thermal conductive material is to transfer heat and help with heat dissipation. The thermal conductive material can be copper or other materials, which is not limited here. Copper has good thermal conductivity and electrical conductivity. In this way, the thermal conductive material between the not connected pins and the solder balls can help transfer heat from one side of the packaging substrate to the other side, thereby improving the heat dissipation performance of the memory.

[0065] In some embodiments, the main control module 200 may be a microcontroller unit (MCU). The main control module 200 can be used to execute specific control tasks, such as reading data, processing instructions from external electronic devices, etc. The processing core of the main control module 200 can be designed based on the RISC-V architecture to execute various control and computing tasks.

[0066] In some embodiments, the flash memory module 300 is a complete storage unit composed of multiple flash memory dies. A flash memory die refers to the basic physical unit of a flash memory and is an independent NAND flash memory chip. Multiple flash planes are provided inside the flash memory die. A flash plane is a logical partition inside the flash memory die, and each plane can independently perform read and write operations. The basic erasure unit of a flash plane can be a flash block, and a flash block is composed of multiple pages. A page is the basic read and write unit of a flash block and is composed of multiple flash memory cells. A flash memory cell is the smallest physical unit for storing data, and each cell can store 1 bit or multiple bits of data. When the main control module 200 executes a read operation, it needs to read data in units of pages. When the main control module 200 executes a write operation, it needs to write data in units of pages, but the entire flash block needs to be erased before writing. When the main control module 200 executes an erasure operation, it needs to erase data in units of flash blocks, and all cells are restored to the "1" state after erasure.

[0067] In some embodiments, the power supply module can convert an external power supply into the voltage and current required by the memory and ensure the stability and reliability of the power supply. The power supply module can at least include a voltage regulator, a filter capacitor, a protection circuit, etc. The voltage regulator can be used to convert the external power supply into the voltage required by the memory. The filter capacitor can be used to smooth the voltage and reduce power supply noise. The protection circuit can include overvoltage protection, overcurrent protection, short-circuit protection and other circuits to ensure power supply safety.

[0068] Please refer to Figure 1 , in some embodiments, the number of semiconductor temperature control modules 500 can be at least one. When the number of semiconductor temperature control modules 500 is multiple, two adjacent semiconductor temperature control modules 500 can be connected in series. The semiconductor temperature control module 500 can be used to adjust the temperature of the main control module 200 and the flash memory module 300. The semiconductor temperature control module 500 can include a first substrate 510, a second substrate 520, and a semiconductor temperature control array unit 530.

[0069] Please refer to Figure 1 and Figure 3 , in some embodiments, the number of the first substrates 510 can be multiple. The first substrates 510 can be located on the periphery of the main control module 200 and the flash memory module 300. The number of the second substrates 520 can be the same as that of the first substrates 510 and the two correspond to each other. The second substrates 520 can be arranged opposite to the first substrates 510. The second substrates 520 can be connected to the unconnected pins nearby through a heat-conducting material. The heat-conducting material can be copper or other materials, which is not limited herein. The semiconductor temperature control array unit 530 can be formed between the first substrate 510 and the second substrate 520. The semiconductor temperature control array unit 530 can be a thermoelectric cooler.

[0070] In some embodiments, the material of the first substrate 510 can be insulating ceramic. The material of the second substrate 520 can be insulating ceramic. The insulating ceramic can be aluminum nitride (AlN) ceramic, beryllium oxide (BeO) ceramic, boron nitride (BN) ceramic, etc., which is not limited herein.

[0071] Please refer to Figure 1 , Figure 2 and Figure 3, in some embodiments, the current switching module 400 may be electrically connected to the power supply module. The current switching module 400 may also be electrically connected to the semiconductor temperature control array unit 530. The current switching module 400 controls the flow direction of the current in the semiconductor temperature control array unit 530 to control the semiconductor temperature control array unit 530 to perform refrigeration or heating. Among them, the semiconductor temperature control array unit 530 can be used to implement the Peltier Effect. The Peltier Effect is a kind of thermoelectric effect. When an electric current passes through a loop composed of two different conductors (or semiconductors), heat absorption or heat release will occur at the joints of the two conductors.

[0072] Please refer to Figure 1 , Figure 2 and Figure 3 , in some embodiments, when the temperatures of the main control module 200 and the flash memory module 300 are too high, the main control module 200 may generate and send a control signal, and the current switching module 400 may adjust the flow direction of the current in the semiconductor temperature control array unit 530 based on the control signal, so that the first substrate 510 absorbs heat and the second substrate 520 generates heat. The heat on the second substrate 520 can sequentially pass through the unconnected pins, the thermal conductive material, and the solder balls and be transmitted to the outside of the package substrate 100, thereby achieving a cooling effect. When the temperatures of the main control module 200 and the flash memory module 300 are too low, the main control module 200 may generate and send a control signal, and the current switching module 400 may adjust the flow direction of the current in the semiconductor temperature control array unit 530 based on the control signal, so that the first substrate 510 generates heat and the second substrate 520 absorbs heat. The second substrate 520 can sequentially pass through the unconnected pins, the thermal conductive material, and the solder balls to absorb the heat outside the package substrate 100, thereby achieving a heating effect.

[0073] Please refer to Figure 1 , in some embodiments, a first output terminal 210 and a second output terminal 220 may be provided on the main control module 200. The main control module 200 can send different control signals through the first output terminal 210 and the second output terminal 220 respectively. For example, the main control module 200 can generate and send a first signal (IO1) through the first output terminal 210, and the main control module 200 can generate and send a second signal (IO2) through the second output terminal 220.

[0074] Please refer to Figure 1, in some embodiments, the current switching module 400 may include a first switching circuit and a second switching circuit. Among them, the first switching circuit may be electrically connected to the first output terminal 210 of the main control module 200 and the semiconductor temperature control array unit 530. The first switching circuit may be configured to conduct according to a first signal and supply power to the semiconductor temperature control array unit 530. The second switching circuit may be electrically connected to the second output terminal 220 of the main control module 200 and the semiconductor temperature control array unit 530. The second switching circuit may be configured to conduct according to a second signal and supply power to the semiconductor temperature control array unit 530. Among them, the direction of the current in the first switching circuit and the semiconductor temperature control array unit 530 is denoted as the first direction, and the direction of the current in the second switching circuit and the semiconductor temperature control array unit 530 is denoted as the second direction, and the first direction is opposite to the second direction.

[0075] Please refer to Figure 1 , in some embodiments, since the number of the semiconductor temperature control array units 530 is multiple, in order to facilitate the connection of the multiple semiconductor temperature control array units 530 to the first switching circuit and the second switching circuit respectively, at this time, a first power supply port 110 and a second power supply port 120 may be formed on the packaging substrate 100. Among them, after the multiple semiconductor temperature control array units 530 are connected in series, the first power supply end 531 of the series-connected semiconductor temperature control array units 530 may be electrically connected to the first power supply port 110, and the second power supply end 532 of the series-connected semiconductor temperature control array units 530 may be electrically connected to the second power supply port 120. The first switching circuit may be electrically connected to the first power supply port 110 and the second power supply port 120 respectively, and the second switching circuit may also be electrically connected to the first power supply port 110 and the second power supply port 120 respectively. At this time, the first switching circuit may supply power to the series-connected semiconductor temperature control array units 530, and the second switching circuit may also supply power to the series-connected semiconductor temperature control array units 530. Among them, at the same moment, the first switching circuit and the second switching circuit cannot supply power to the series-connected semiconductor temperature control array units 530 simultaneously.

[0076] Please refer to Figure 1 and Figure 2, in some embodiments, the first switching circuit may include a first MOS transistor M1 and a second MOS transistor M2. Among them, the gate of the first MOS transistor M1 may be electrically connected to the first output terminal 210 of the main control module 200, its source may be electrically connected to the power supply module, and its drain may be electrically connected to the first power supply port 110. The gate of the second MOS transistor M2 may be electrically connected to the first output terminal 210 of the main control module 200, its source is electrically connected to the second power supply port 120, and its drain is electrically connected to the ground pin of the package substrate 100. When the main control module 200 generates and sends a first signal through the first output terminal 210, the gates of the first MOS transistor M1 and the second MOS transistor M2 can be turned on. At this time, the power supply module can supply power to the source of the first MOS transistor M1, and the current can sequentially pass through the first power supply port 110, the series-connected semiconductor temperature control array unit 530, the second power supply port 120, the source of the second MOS transistor M2, the drain of the second MOS transistor M2, and the ground pin of the package substrate 100, and form a loop.

[0077] Please refer to Figure 1 and Figure 2 , in some embodiments, the second switching circuit may include a third MOS transistor M3 and a fourth MOS transistor M4. Among them, the gate of the third MOS transistor M3 may be electrically connected to the second output terminal 220 of the main control module 200, its source may be electrically connected to the power supply module, and its drain may be electrically connected to the second power supply port 120. The gate of the fourth MOS transistor M4 may be electrically connected to the second output terminal 220 of the main control module 200, its source is electrically connected to the first power supply port 110, and its drain is electrically connected to the ground pin of the package substrate 100. When the main control module 200 generates and sends a second signal through the second output terminal 220, the gates of the third MOS transistor M3 and the fourth MOS transistor M4 can be turned on. At this time, the power supply module can supply power to the source of the third MOS transistor M3, and the current can sequentially pass through the second power supply port 120, the series-connected semiconductor temperature control array unit 530, the first power supply port 110, the source of the fourth MOS transistor M4, the drain of the fourth MOS transistor M4, and the ground pin of the package substrate 100, and form a loop.

[0078] Please refer to Figure 1 and Figure 2 , in some embodiments, the models of the first MOS transistor M1, the second MOS transistor M2, the third MOS transistor M3, and the fourth MOS transistor M4 may not be limited. For example, they may be metal-oxide-semiconductor field-effect transistors (N MOSFETs), and the specific model may be AO3400A.

[0079] Please refer to Figure 3 and Figure 4, in some embodiments, the semiconductor temperature control array unit 530 may include multiple arrays of semiconductor temperature control units 533. Two adjacent semiconductor temperature control units 533 may be connected in series. The semiconductor temperature control unit 533 may include a first current-carrying strip 5331, a P-type semiconductor structure 5332, a second current-carrying strip 5333, an N-type semiconductor structure 5334, and a third current-carrying strip 5335. Among them, the first current-carrying strip 5331 may be attached to the second substrate 520. The P-type semiconductor structure 5332 may be electrically connected to the first current-carrying strip 5331. The second current-carrying strip 5333 may be attached to the first substrate 510 and electrically connected to the P-type semiconductor structure 5332. The N-type semiconductor structure 5334 may be electrically connected to the second current-carrying strip 5333. The third current-carrying strip 5335 may be attached to the second substrate 520 and electrically connected to the N-type semiconductor structure 5334. There is a gap between the first current-carrying strip 5331 and the third current-carrying strip 5335. The first current-carrying strip 5331 may be electrically connected to the first power supply terminal 531. The third current-carrying strip 5335 may be electrically connected to the second power supply terminal 532.

[0080] Please refer to Figure 3 , in some embodiments, at the connection between the N-type semiconductor structure 5334 and the second current-carrying strip 5333, the potential energy of electrons in the second current-carrying strip 5333 is lower than the potential energy of the current-carrying electrons in the N-type semiconductor structure 5334. These electrons in the second current-carrying strip 5333 must obtain additional energy to enter the N-type semiconductor structure 5334, that is, these electrons can enter the N-type semiconductor structure 5334 only after absorbing heat in the second current-carrying strip 5333, so that the second current-carrying strip 5333 forms a refrigerating end. When electrons want to enter the third current-carrying strip 5335 from the N-type semiconductor structure 5334, since electrons flow from a place with high potential energy to a place with low potential energy and release energy, heat is released at this place, so that the third current-carrying strip 5335 forms a heat dissipation end.

[0081] Please refer to Figure 3, in some embodiments, at the connection between the P-type semiconductor structure 5332 and the second current-carrying strip 5333, the potential energy of the positive charges in the second current-carrying strip 5333 is lower than the potential energy of the current-carrying holes in the P-type semiconductor structure 5332. These positive charges in the second current-carrying strip 5333 must obtain additional energy to enter the P-type semiconductor structure 5332, that is, these positive charges can enter the P-type semiconductor structure 5332 only after absorbing heat in the second current-carrying strip 5333. Thus, the second current-carrying strip 5333 forms the refrigerating end. When the positive charges want to enter the first current-carrying strip 5331 from the P-type semiconductor structure 5332, since the positive charges flow from a place with higher potential energy to a place with lower potential energy, energy needs to be released. Therefore, heat is released at this place, and thus the first current-carrying strip 5331 forms the heat dissipation end. Therefore, the second current-carrying strip 5333 forms the heat absorption end, and the first current-carrying strip 5331 and the third current-carrying strip 5335 form the heat dissipation end, constituting a semiconductor heat pump. Of course, if the polarities of the sources of the first current-carrying strip 5331 and the third current-carrying strip 5335 are reversed, then the first current-carrying strip 5331 and the third current-carrying strip 5335 can form the refrigerating end, and the second current-carrying strip 5333 can form the heat dissipation end.

[0082] Please refer to Figure 4 , in some embodiments, since the semiconductor temperature control units 533 are arranged in an array, the first current-carrying strip 5331 or the third current-carrying strip 5335 of two adjacent semiconductor temperature control units 533 can be shared. For example, the third current-carrying strip 5335 of the first semiconductor temperature control unit 533 and the first current-carrying strip 5331 of the second semiconductor temperature control unit 533 can be the same current-carrying strip.

[0083] In some embodiments, the number of temperature sensing units can be at least one. The temperature sensing units can be installed on the main control module 200 and / or the flash memory module 300 to obtain the current temperature of the main control module 200 and / or the flash memory module 300, and send the current temperature to the main control module 200. The main control module 200 can judge how to adjust the current temperature of the main control module 200 and / or the flash memory module 300 based on the current temperature.

[0084] In some embodiments, temperature changes can affect the physical and electrical characteristics of the flash memory module 300. At high temperatures, the charge in the floating gate of the flash memory module 300 is more likely to leak, resulting in data loss or errors. At low temperatures, the charge leakage rate of the flash memory module 300 slows down, but low temperatures may cause changes in the threshold voltage of the transistor, affecting data reading. At the same time, within a period of time, when the temperature difference changes greatly, the flash memory module 300 is more sensitive. For example, when the temperature rapidly drops from 70 °C to -10 °C, the stability of the charge in the floating gate is affected by the temperature. The rapid temperature change may cause uneven charge distribution, affecting data reading. At the same time, the sudden temperature change may cause the threshold voltage of the transistor to drift, affecting the accurate reading of data. That is, rapid temperature changes may cause bit errors when reading data.

[0085] In some embodiments, the host control module 200 is used to adjust the current temperature according to the following steps:

[0086] Step S10: Determine the current temperature and the preset temperature range:

[0087] Step S20: When the current temperature is outside the preset temperature range, the host control module generates and sends a control signal with a duty cycle of 100%;

[0088] Step S30: When the current temperature is within the preset temperature range, the host control module adjusts the duty cycle of the control signal until the current temperature reaches the target temperature.

[0089] In some embodiments, when performing step S10, specifically, the preset temperature range can be the target temperature range set by the user or the system. For example, the ambient temperature at which the memory can operate safely needs to be in the range of -55 °C to 125 °C. At this time, the preset temperature range can be set to -10 °C to 85 °C. Of course, the specific size of the preset temperature range is not limited and can be set according to actual requirements and the model of the memory.

[0090] In some embodiments, when performing step S20, specifically, when the current temperature is lower than the lower limit value of the preset temperature range (for example, -10 °C), or when the current temperature is higher than the upper limit value of the preset temperature range (for example, 85 °C), it can be considered that the current temperature is outside the preset temperature range. At this time, the host control module 200 needs to set the duty cycle of the control signal to 100%, and the control signal outputs at the maximum power to quickly heat or cool, so that the current temperature can enter the preset temperature range as soon as possible. Among them, the duty cycle is the ratio of the high-level time in the control signal to the total period, and is used to adjust the average power output of the semiconductor temperature control module 500.

[0091] In some embodiments, when the current temperature is within the preset temperature range, the main control module 200 can dynamically adjust the duty cycle according to the deviation between the current temperature and the target temperature. For example, if the current temperature is close to the target temperature, the duty cycle is reduced to decrease the power output; for another example, if the current temperature is far from the target temperature, the duty cycle is increased to increase the power output. Dynamically adjusting the duty cycle can stabilize the current temperature near the target temperature and avoid overshoot or oscillation. The target temperature refers to the optimal operating ambient temperature of the memory, and its numerical value is not limited and can be set according to actual requirements and the model of the memory. The main control module 200 can adjust the duty cycle through PWM (Pulse Width Modulation) technology.

[0092] In some embodiments, the main control module 200 can be used to adjust the duty cycle of the control signal according to the following steps:

[0093] Step S31: Obtain the temperature change amount of the main control module and / or the flash memory module within a unit time;

[0094] Step S32: Judge the temperature change amount and the preset change threshold:

[0095] Step S33: When the temperature change amount is greater than the preset change threshold, reduce the duty cycle of the control signal until the temperature change amount is less than or equal to the preset change threshold;

[0096] Step S34: When the temperature change amount is less than or equal to the preset change threshold, maintain the duty cycle of the control signal until the current temperature reaches the target temperature.

[0097] In some embodiments, when performing step S31, specifically, the temperature change amount refers to the temperature change value (ΔT) of the main control module 200 and / or the flash memory module 300 within a unit time. Through the sampling interval set by the main control module 200, such as every second or every minute; the current temperature is monitored in real time through the temperature sensing unit; by calculating the change amount of the current temperature before and after the sampling interval, the temperature change amount can be obtained.

[0098] In some embodiments, when performing step S32, specifically, the preset change threshold refers to the maximum allowable temperature change set by the main control module 200. For example, within one sampling interval, the preset change threshold can be set to 1 °C. The specific size of the sampling interval can be set according to actual requirements, such as 1 minute. The specific size of the preset change threshold can also be set according to actual requirements. At this time, within one sampling interval, the size of the temperature change amount and the preset change threshold can be judged.

[0099] In some embodiments, when steps S33 and S34 are executed, specifically, when the temperature change amount is greater than a preset change threshold, it can be considered that the temperature difference changes greatly. To prevent problems with the data stored in the flash memory module 300, at this time, the duty cycle of the control signal can be reduced to slow down the temperature change rate. When the temperature change amount is less than or equal to the preset change threshold, the current duty cycle of the control signal can be maintained to continue adjusting the temperature.

[0100] In some embodiments, when the semiconductor temperature control module 500 is operating, the difference between the current temperature and the target temperature of the main control module 200 and / or the flash memory module 300 may be large. In the case of a large temperature difference, writing data to the flash block may cause uneven charge distribution, increasing the probability of bit errors. Specifically, writing data to the flash block requires changing the charge state in the floating gate through voltage operations. In the case of a large temperature difference, the stability of the charge is poor, and the writing operation may cause uneven charge distribution, increasing the risk of data errors. To protect the data written in this stage, the main control module 200 is further configured to perform a data migration operation according to the following steps:

[0101] Step S40: Obtain the temperature change data of the main control module and / or the flash memory module within a preset time period;

[0102] Step S50: Determine the temperature change data and the preset temperature difference threshold:

[0103] Step S60: When the temperature change data is greater than the preset temperature difference threshold, identify the data block where the data is written within the preset time period; the main control module performs a data migration operation to write the data stored in the identified data block to an idle data block.

[0104] In some embodiments, when step S40 is executed, specifically, the preset time period can be the time period set by the main control module 200. The size of the preset time period is not limited. For example, it can be 30 min. Within the preset time period, by monitoring the current temperature of the main control module 200 and / or the flash memory module 300, the corresponding temperature change data can be calculated.

[0105] In some embodiments, when step S50 is executed, specifically, the preset temperature difference threshold can be the maximum allowable temperature fluctuation set by the main control module 200. The size of the preset temperature difference threshold is not limited. For example, it can be 50 °C.

[0106] In some embodiments, when step S60 is executed, specifically, when the temperature change data is greater than a preset temperature difference threshold, the main control module 200 can identify the data blocks of the written data within a preset duration. Subsequently, the main control module 200 can select unoccupied free blocks from the flash memory module 300, copy the data in the data blocks of the written data to the free blocks, and update the address mapping table. By migrating data to more stable free blocks, the data reliability can be improved.

[0107] It can be seen that in the above solution, through the combination of the embedded semiconductor temperature control module and the dynamic control strategy, the comprehensive performance of the memory in an extreme temperature environment is significantly improved. The semiconductor temperature control array unit is used to bidirectionally adjust the temperature (cooling / heating), and the current direction is reversed through the current switching module to achieve rapid response. The duty cycle is adaptively adjusted to accurately control the temperature of the main control / flash memory module, eliminating the high cost problem of the traditional hierarchical screening scheme. The integrated heat conduction path design and ceramic substrate packaging ensure efficient heat dissipation and reduce the volume. The temperature sensing monitoring triggers the data block dynamic migration mechanism, and the data is transferred to a stable area when the temperature fluctuates violently, avoiding the increase in the error rate caused by charge leakage / threshold drift.

[0108] The embodiments of the present invention disclosed above are only used to help explain the present invention. The embodiments do not describe all the details in detail, nor do they limit the present invention to the specific embodiments described. Obviously, many modifications and changes can be made according to the content of this specification. These embodiments are selected and specifically described in this specification to better explain the principles and practical applications of the present invention, so that those skilled in the art can understand and utilize the present invention well. The present invention is only limited by the claims and their full scope and equivalents.

Claims

1. A memory, characterized in that: include: A packaging substrate, wherein a main control module, a flash memory module, a power supply module, and a plurality of unconnected pins are connected to one side of the packaging substrate, and a plurality of solder balls are connected to the other side of the packaging substrate, and the unconnected pins are connected to some of the solder balls; A current switching module, electrically connected to the power supply module; At least one semiconductor temperature control module, the semiconductor temperature control module comprising: A first substrate, located outside the main control module and the flash memory module; a second substrate, disposed opposite to the first substrate, the second substrate being connected to the unconnected pins; A semiconductor temperature control array unit is formed between the first substrate and the second substrate; the semiconductor temperature control array unit includes a first power supply end and a second power supply end; The current switching module is also electrically connected to the semiconductor temperature control array unit, and is used to adjust the flow direction of the current in the semiconductor temperature control array unit according to the control signal of the main control module to control the cooling or heating of the semiconductor temperature control array unit; the control signal includes a first signal and a second signal; The current switching module includes a first switching circuit and a second switching circuit; at the same time, the first switching circuit and the second switching circuit cannot simultaneously supply power to the semiconductor temperature control array unit; The first switching circuit is electrically connected to the main control module and the semiconductor temperature control array unit; the first switching circuit is used to conduct according to the first signal and supply power to the semiconductor temperature control array unit; the flow direction of the current in the first switching circuit and the semiconductor temperature control array unit is recorded as a first direction; The second switching circuit is electrically connected to the main control module and the semiconductor temperature control array unit; the second switching circuit is used to conduct according to the second signal and supply power to the semiconductor temperature control array unit; the flow direction of the current in the second switching circuit and the semiconductor temperature control array unit is recorded as the second direction; the first direction is opposite to the second direction; The first switching circuit includes a first MOS tube and a second MOS tube; the first MOS tube and the second MOS tube are turned on according to a first signal; the gate of the first MOS tube is electrically connected to the main control module, the source of the first MOS tube is electrically connected to the power supply module, and the drain of the first MOS tube is electrically connected to the first power supply end; the gate of the second MOS tube is electrically connected to the main control module, the source of the second MOS tube is electrically connected to the second power supply end, and the drain of the second MOS tube is electrically connected to the ground pin of the packaging substrate; The second switching circuit includes a third MOS tube and a fourth MOS tube; the third MOS tube and the fourth MOS tube are turned on according to a second signal; the gate of the third MOS tube is electrically connected to the main control module, the source of the third MOS tube is electrically connected to the power supply module, and the drain of the third MOS tube is electrically connected to the second power supply end; the gate of the fourth MOS tube is electrically connected to the main control module, the source of the fourth MOS tube is electrically connected to the first power supply end, and the drain of the fourth MOS tube is electrically connected to the ground pin of the packaging substrate.

2. The memory according to claim 1, characterized in that: The semiconductor temperature control array unit includes a plurality of arrays of semiconductor temperature control units; two adjacent semiconductor temperature control units are connected in series; The semiconductor temperature control unit comprises: a first guide strip, attached to the second substrate; A P-type semiconductor structure electrically connected to the first guide bar; A second guide bar, attached to the first substrate and electrically connected to the P-type semiconductor structure; An N-type semiconductor structure electrically connected to the second guide bar; and a third guide bar, attached to the second substrate and electrically connected to the N-type semiconductor structure; There is a gap between the first guide bar and the third guide bar.

3. The memory according to claim 1, characterized in that: The second substrate is connected to the unconnected pins via a heat-conducting material, and the unconnected pins are connected to some solder balls via a heat-conducting material.

4. The memory according to claim 1, characterized in that: The first substrate is made of insulating ceramic, and the second substrate is made of insulating ceramic.

5. The memory according to claim 1, characterized in that: It also includes a temperature sensing unit, which is used to obtain the current temperature of the main control module and / or the flash memory module; the main control module is used to adjust the current temperature according to the following steps: Determine the current temperature and the preset temperature range: When the current temperature is outside the preset temperature range, the main control module generates and sends a control signal with a duty cycle of 100%; When the current temperature is within the preset temperature range, the main control module adjusts the duty cycle of the control signal until the current temperature reaches the target temperature.

6. The memory according to claim 5, characterized in that: The main control module is used to adjust the duty cycle of the control signal according to the following steps: Obtaining a temperature change of the main control module and / or the flash memory module within a unit time; Determine the temperature change and the preset change threshold: When the temperature change is greater than a preset change threshold, reducing the duty cycle of the control signal until the temperature change is less than or equal to the preset change threshold; When the temperature change is less than or equal to a preset change threshold, the duty cycle of the control signal is maintained until the current temperature reaches a target temperature.

7. The memory according to claim 5, characterized in that: The flash memory module includes a plurality of flash memory blocks; the main control module is used to perform data migration operations according to the following steps: Acquiring temperature change data of the main control module and / or the flash memory module within a preset time period; Determine the temperature change data and the preset temperature difference threshold: When the temperature change data is greater than a preset temperature difference threshold, identifying a data block for writing data within the preset time period; The main control module performs a data moving operation to write the data stored in the identified data block into an idle data block.

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