Substrate processing apparatus, cleaning method, method of manufacturing semiconductor device, and recording medium

Abstract

The invention provides a substrate processing apparatus, a cleaning method, a method of manufacturing a semiconductor device, and a recording medium. Depositions attached to an on-off valve and the like provided in an exhaust pipe can be effectively removed when a cleaning process using a cleaning gas is performed. The device comprises a processing container, an exhaust pipe connected with the processing container, an on-off valve arranged on the exhaust pipe, a pressure adjusting valve arranged on the exhaust pipe, a first supply system, a second supply system and a control part. The first supply system supplies either a cleaning gas or an additive gas having a molecular structure different from that of the cleaning gas into the exhaust piping via the gas supply pipe. A second supply system for supplying the other one of the cleaning gas and the additive gas into the processing container; the control unit is configured so as to be able to control the on-off valve, the pressure adjustment valve, the first supply system, and the second supply system so as to execute a cleaning process in which the supply of the cleaning gas and the supply of the additive gas are performed at the same time while the on-off valve and the pressure adjustment valve are open.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a cleaning method, a method for manufacturing a semiconductor device, and a recording medium. Background Art

[0002] When a film is formed on a substrate in a processing chamber, the film forming gas and its byproducts may be deposited on the on-off valve provided in the exhaust pipe, etc. The deposits may hinder the operation of the on-off valve, etc., become particles, and may affect the film forming process. Therefore, a cleaning process is sometimes performed to remove the deposits by supplying a cleaning gas into the exhaust pipe (for example, see Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-50246 Summary of the invention

[0006] Problems to be solved by the invention

[0007] The present disclosure provides a technology capable of effectively removing deposits attached to an on-off valve or the like provided in an exhaust pipe when performing a cleaning process using a cleaning gas.

[0008] Methods for solving problems

[0009] According to one embodiment of the present disclosure, a technology is provided, which comprises a processing container, an exhaust piping connected to the processing container, an on-off valve arranged on the exhaust piping, a pressure regulating valve arranged on the exhaust piping, a first supply system, a second supply system and a control unit; the first supply system supplies a cleaning gas or an additional gas having a molecular structure different from that of the cleaning gas into the exhaust piping via a gas supply pipe, and the gas supply pipe is connected to a position of the exhaust piping that is closer to the upstream side than at least one of the on-off valve and the pressure regulating valve; the second supply system supplies the cleaning gas or the other of the additional gas into the processing container; the control unit is configured to control the on-off valve, the pressure regulating valve, the first supply system and the second supply system so as to perform a cleaning process with the on-off valve and the pressure regulating valve being open, and the cleaning process simultaneously performs the supply of the cleaning gas and the supply of the additional gas.

[0010] Effects of the Invention

[0011] According to the present disclosure, when performing a cleaning process using a cleaning gas, deposits attached to an on-off valve or the like provided in an exhaust pipe can be effectively removed. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic configuration diagram of a vertical processing furnace of a substrate processing apparatus preferably used in one embodiment of the present disclosure, and is a diagram showing a processing furnace 202 portion in a vertical cross-sectional view.

[0013] Figure 2 This is a schematic structural diagram of a vertical processing furnace of a substrate processing device preferably used in one embodiment of the present disclosure. Figure 1 The AA line cross-sectional view shows a portion of the processing furnace 202 .

[0014] Figure 3 1 is a schematic configuration diagram of a controller 121 of a substrate processing apparatus preferably used in one embodiment of the present disclosure, and is a diagram showing a control system of the controller 121 in the form of a block diagram.

[0015] Figure 4 It is a schematic partially enlarged view showing a substrate processing apparatus in Modification 2 of the present disclosure and a diagram showing supplied gases.

[0016] Figure 5 It is a schematic partially enlarged view showing a substrate processing apparatus in Modification 3 of the present disclosure and a diagram showing supplied gas.

[0017] Figure 6 It is a schematic partially enlarged view showing a substrate processing apparatus in Modification 4 of the present disclosure and a diagram showing supplied gases.

[0018] Description of Reference Numerals

[0019] 200: wafer (substrate), 231: exhaust pipe, 244: APC valve, 247: GV, 121: control unit. DETAILED DESCRIPTION

[0020] <One aspect of the present disclosure>

[0021] The following mainly refers to Figure 1 to Figure 3 One mode of the present disclosure is described. It should be noted that the drawings used in the following description are all schematic drawings, and the relationship between the dimensions of the elements shown in the drawings, the ratio of the elements, etc. may not be consistent with the actual situation. In addition, the relationship between the dimensions of the elements, the ratio of the elements, etc. may not be consistent between multiple drawings.

[0022] (1) Structure of substrate processing apparatus

[0023] like Figure 1As shown, the processing furnace 202 has a heater 207 as a temperature adjustment unit (heating unit). The heater 207 is cylindrical and is vertically mounted by being supported by a holding plate. The heater 207 also functions as an activation mechanism (excitation unit) that thermally activates (excites) the gas.

[0024] On the inner side of the heater 207, a reaction tube 203 is arranged concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), and is formed into a cylindrical shape with a closed upper end and an open lower end. Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. The manifold 209 is made of a metal-containing material such as stainless steel (SUS), and is formed into a cylindrical shape with an upper end and a lower end open. The upper end of the manifold 209 is configured to engage with the lower end of the reaction tube 203 via an O-ring 220a to support the reaction tube 203. The reaction tube 203 and the manifold 209 mainly constitute a processing container (reaction container). A processing chamber 201 is formed in the hollow portion of the cylinder of the processing container. The processing chamber 201 is configured to be able to accommodate a wafer 200 as a substrate. The wafer 200 is processed in the processing chamber 201.

[0025] Nozzles 249a to 249c are provided in the processing chamber 201 so as to penetrate the side wall of the manifold 209, respectively, as first to third supply parts. The nozzles 249a to 249c are also referred to as first to third nozzles, respectively. The nozzles 249a to 249c are made of, for example, a heat-resistant material such as quartz or SiC. Gas supply pipes 232a to 232c are connected to the nozzles 249a to 249c, respectively. The nozzle 249c is arranged on the side closer to the exhaust port 231a described later than the nozzles 249a and 249b.

[0026] In the gas supply pipes 232a to 232c, mass flow controllers (MFCs) 241a to 241c as flow controllers (flow control units) and valves 243a to 243c as opening and closing valves are respectively provided in order from the upstream side of the gas flow. A gas supply pipe 232g is connected to the gas supply pipe 232a at a position downstream of the valve 243a. Gas supply pipes 232d and 232h are respectively connected to the gas supply pipe 232b at a position downstream of the valve 243b. A gas supply pipe 232i is connected to the gas supply pipe 232c at a position downstream of the valve 243c. In the gas supply pipes 232d, 232g to 232i, MFCs 241d, 241g to 241i and valves 243d, 243g to 243i are respectively provided in order from the upstream side of the gas flow. The gas supply pipes 232a to 232i are made of a metal material such as SUS, for example.

[0027] like Figure 2As shown, the nozzles 249a and 249b are respectively arranged to stand up from the lower part of the inner wall of the reaction tube 203 along the upper part toward the arrangement direction of the wafers 200. That is, the nozzles 249a and 249b are respectively arranged in the area of ​​the wafer arrangement area on the side of the wafer arrangement area where the wafers 200 are arranged, and horizontally surround the wafer arrangement area. Gas supply holes 250a and 250b for supplying gas are respectively provided on the side of the nozzles 249a and 249b. A plurality of gas supply holes 250a and 250b are provided from the lower part to the upper part of the reaction tube 203.

[0028] The nozzle 249c is provided to rise from the lower portion of the inner wall of the reaction tube 203 upward in the arrangement direction of the wafers 200 to the vicinity of an exhaust port 231a described later. A gas supply hole 250c for supplying gas is provided at the front end of the nozzle 249c.

[0029] An exhaust port 231a for exhausting the atmosphere in the processing chamber 201 is provided below the side wall of the reaction tube 203, and an exhaust pipe 231 is connected to the exhaust port 231a. In the exhaust pipe 231, a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201, a GV (Gate Valve) 247 as an opening and closing valve, and an APC (Auto Pressure Controller) valve 244 as a pressure regulating valve (pressure regulating unit) are provided in sequence from the upstream side. The APC valve 244 is composed of, for example, a butterfly valve. In addition, an exhaust pipe temperature sensor (not shown) is installed on the upstream side of the GV 247. The exhaust pipe temperature sensor can be composed of a known temperature sensor such as a thermocouple. A vacuum pump 246 as a vacuum exhaust device is connected to the exhaust pipe 231 via the pressure sensor 245, the GV 247, and the APC valve 244. The GV 247 and the APC valve 244 are configured such that the vacuum pump 246 is operated and the vacuum exhaust in the processing chamber 201 can be performed and stopped by opening and closing the valves. Furthermore, the APC valve 244 can adjust the valve opening based on the pressure information detected by the pressure sensor 245 when the vacuum pump 246 is operated, thereby adjusting the pressure in the processing chamber 201. The exhaust system is mainly composed of the exhaust pipe 231, the APC valve 244, the GV 247, and the pressure sensor 245. It is also conceivable that the vacuum pump 246 is included in the exhaust system.

[0030] As the on-off valve, in addition to the GV, a ball valve or the like which is suitable for an on-off action (open / close action) can be mainly used. However, as the on-off valve, the use of a valve which can control the valve body or the like in a manner having an intermediate opening is not excluded. In addition, as the pressure regulating valve, in addition to the butterfly valve, a ball valve or the like which is suitable for a flow regulating action can be mainly used. As the pressure regulating valve, a valve which can control the valve body or the like in a manner having an intermediate opening can be used.

[0031] A gas supply pipe 232e is connected between the GV 247 of the exhaust pipe 231 and the APC valve 244. A gas supply pipe 232f is connected to the upstream side of the GV 247 of the exhaust pipe 231. The gas supply pipes 232e and 232f are provided with MFCs 241e and 241f and valves 243e and 243f in order from the upstream side of the gas flow, respectively. A gas supply pipe 232j is connected to the gas supply pipe 232e at a position downstream of the valve 243e. The gas supply pipe 232j is provided with MFCs 241j and valves 243j in order from the upstream side of the gas flow. The gas supply pipe 232k is connected to the gas supply pipe 232f at a position downstream of the valve 243f. The gas supply pipe 232k is provided with MFCs 241k and valves 243k in order from the upstream side of the gas flow. In this embodiment, gas supply pipe coolers 242e and 242f are installed as gas supply pipe cooling devices on the outer peripheries of the gas supply pipes 232e and 232f, respectively. An exhaust pipe heater 231h is installed on the outer periphery of the exhaust pipe 231. In addition, gas supply pipe temperature sensors (not shown) are installed on the upstream sides of the MFCs 241e and 241f of the gas supply pipes 232e and 232f, respectively. The gas supply pipe temperature sensors can be composed of known temperature sensors such as thermocouples.

[0032] A raw material (raw material gas) serving as a film-forming gas is supplied from the gas supply pipe 232a via the MFC 241a, the valve 243a, and the nozzle 249a into the processing chamber 201. The raw material gas refers to a gas obtained by vaporizing a raw material in a gaseous state, for example, a raw material in a liquid state at room temperature and pressure, or a raw material in a gaseous state at room temperature and pressure.

[0033] The first reaction gas as a film forming gas is supplied from the gas supply pipe 232b via the MFC 241b, the valve 243b, and the nozzle 249b into the processing chamber 201. In the cleaning step described later, as an embodiment, the first reaction gas is also used as an additional gas.

[0034] The additional gas is supplied from the gas supply pipe 232 c to the exhaust pipe 231 via the MFC 241 c , the valve 243 c , the nozzle 249 c , and the inside of the processing chamber 201 .

[0035] The second reaction gas as a film-forming gas is supplied into the processing chamber 201 from the gas supply pipe 232 d via the MFC 241 d , the valve 243 d , the gas supply pipe 232 b , and the nozzle 249 b .

[0036] The cleaning gas is supplied from the gas supply pipe 232e to the exhaust pipe 231 via the MFC 241e and the valve 243e.

[0037] The cleaning gas is supplied from the gas supply pipe 232f into the exhaust pipe 231 via the MFC 241f and the valve 243f.

[0038] An inert gas is supplied into the processing chamber 201 from the gas supply pipes 232g and 232h via the MFCs 241g and 241h, valves 243g and 243h, the gas supply pipes 232a and 232b, and the nozzles 249a and 249b, respectively.

[0039] The inert gas is supplied from the gas supply pipe 232i to the exhaust pipe 231 via the MFC 241i, the valve 243i, the gas supply pipe 232c, and the nozzle 249c.

[0040] Inert gas is supplied from gas supply pipes 232j and 232k to the exhaust pipe 231 via MFCs 241j and 241k, valves 243j and 243k, and gas supply pipes 232e and 232f, respectively.

[0041] The inert gas functions as a purge gas, a carrier gas, a dilution gas, and the like.

[0042] The raw material gas supply system is mainly composed of the gas supply pipe 232a, MFC 241a, and valve 243a. The first reaction gas supply system is mainly composed of the gas supply pipe 232b, MFC 241b, and valve 243b. In the case where the first reaction gas is also used as an additive gas, the first reaction gas supply system also constitutes an additive gas supply system as a second supply system. The additive gas supply system is mainly composed of the gas supply pipe 232c, MFC 241c, and valve 243c. The second reaction gas supply system is mainly composed of the gas supply pipe 232d, MFC 241d, and valve 243d. The cleaning gas supply system (first supply system) is mainly composed of the gas supply pipe 232e, MFC 241e, and valve 243e. The cleaning gas supply system is mainly composed of the gas supply pipe 232f, MFC 241f, and valve 243f. The inert gas supply system is mainly composed of the post-gas supply pipes 232g to 232k, the MFCs 241g to 241k, and the valves 243g to 243k. The nozzles connected to the gas supply pipes constituting the above-mentioned various supply systems may be included in the supply system.

[0043] Any one or all of the various supply systems described above may also be configured as an integrated supply system 248 in which valves 243a to 243k, MFCs 241a to 241k, etc. are integrated. The integrated supply system 248 is configured to be connected to the gas supply pipes 232a to 232k, respectively, and the supply operation of various substances (various gases) into the gas supply pipes 232a to 232k, i.e., the opening and closing operation of the valves 243a to 243k, the flow rate adjustment operation by the MFCs 241a to 241k, etc., is controlled by the controller 121 described later.

[0044] A sealing cover 219 as a furnace cover body capable of hermetically closing the lower end opening of the manifold 209 is provided below the manifold 209. The sealing cover 219 is made of a metal-containing material such as SUS, for example, and is formed in a disc shape. An O-ring 220b as a sealing member abutting against the lower end of the manifold 209 is provided on the upper surface of the sealing cover 219. A rotating mechanism 267 for rotating the wafer box 217 described later is provided below the sealing cover 219. The rotating shaft 255 of the rotating mechanism 267 is made of a metal-containing material such as SUS, for example, and penetrates the sealing cover 219 and is connected to the wafer box 217. The rotating mechanism 267 is configured to rotate the wafer 200 by rotating the wafer box 217. The sealing cover 219 is configured to be lifted and lowered in the vertical direction by a wafer box elevator 115 as a lifting mechanism provided outside the reaction tube 203. The cassette elevator 115 is configured as a transport device (transport mechanism) that carries the wafer 200 in and out (transports) the wafer 200 into and out of the processing chamber 201 by raising and lowering the sealing cover 219 .

[0045] A baffle 219s is provided below the manifold 209 as a furnace port cover. The baffle 219s can hermetically seal the lower end opening of the manifold 209 via an O-ring 220c when the sealing cover 219 is lowered and the wafer box 217 is carried out from the processing chamber 201. The baffle 219s is made of a metal-containing material such as SUS and is formed in a disc shape. The opening and closing action (lifting action, rotation action, etc.) of the baffle 219s is controlled by the baffle opening and closing mechanism 115s.

[0046] The wafer box 217 as a substrate support is configured to support multiple (e.g., 25 to 200) wafers 200 in a horizontal position and arranged in a vertical direction with their centers aligned with each other in multiple stages, that is, arranged at intervals. The wafer box 217 is made of, for example, a heat-resistant material such as quartz or SiC. At the bottom of the wafer box 217, a heat insulation plate 218 made of, for example, a heat-resistant material such as quartz or SiC is supported in multiple stages.

[0047] A temperature sensor 263 as a temperature detector is provided in the reaction tube 203. The temperature in the processing chamber 201 is set to a desired temperature distribution by adjusting the power supply to the heater 207 based on the temperature information detected by the temperature sensor 263. The temperature sensor 263 is provided along the inner wall of the reaction tube 203.

[0048] like Figure 3 As shown, the controller 121 as a control unit (control unit) is configured as a computer including a central processing unit (CPU) 121a, a random access memory (RAM) 121b, a storage device 121c and an I / O interface 121d. RAM 121b, storage device 121c, and I / O interface 121d are configured to be able to exchange data with CPU 121a via an internal bus 121e. The controller 121 is connected to an input and output device 122 such as a touch panel. In addition, the controller 121 can be connected to an external storage device 123. It should be noted that the substrate processing device can be configured to have one control unit or multiple control units. That is, one control unit can be used to perform control for performing the processing described later, or multiple control units can be used. In addition, multiple control units can be configured as a control system interconnected by a wired or wireless communication network, or the control system as a whole can be used to perform control for performing the processing flow described later. In this specification, when the term "control unit" is used, it may include a case where a plurality of control units are included, or a control system composed of a plurality of control units, in addition to a case where one control unit is included.

[0049] The storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), an SSD (Solid State Drive), etc. In the storage device 121c, a control program for controlling the action of the substrate processing device, a process recipe recording the steps and conditions of the substrate processing described later, etc., are recorded and stored in a readable manner. The process recipe is a combination of a method that enables the substrate processing device to execute each step of the substrate processing described later and obtain a specified result through the controller 121, and functions as a program. Hereinafter, process recipes, control programs, etc. are collectively referred to as programs. In addition, process recipes are also referred to as recipes. When the word "program" is used in this specification, sometimes only the recipe is included alone, sometimes only the control program is included alone, or sometimes both are included. RAM 121b is configured as a storage area (working area) for temporarily holding programs, data, etc. read out by CPU 121a.

[0050] The I / O interface 121d is connected to the above-mentioned MFC 241a~241k, valves 243a~243k, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, exhaust pipe temperature sensor, gas supply pipe temperature sensor, heater 207, exhaust pipe heater 231h, gas supply pipe cooler 242e, 242f, pipe rotation mechanism 267, wafer box elevator 115, baffle opening and closing mechanism 115s, etc.

[0051] The CPU 121a is configured to read out a control program from the storage device 121c and execute it, and to read out a recipe from the storage device 121c based on input of an operation command from the input / output device 122. The CPU 121a is configured to control, according to the contents of the read-out process, flow rate adjustment operations of various substances (various gases) by the MFCs 241a to 241k, opening and closing operations of the valves 243a to 243k, opening and closing operations of the APC valve 244 and pressure adjustment operations by the APC valve 244 based on the pressure sensor 245, start and stop of the vacuum pump 246, temperature adjustment operations of the heater 207 based on the temperature sensor 263, rotation of the wafer cassette 217 and rotation speed adjustment operations by the rotation mechanism 267, lifting and lowering operations of the wafer cassette 217 by the wafer cassette elevator 115, opening and closing operations of the shutter 219s by the shutter opening and closing mechanism 115s, and the like.

[0052] The controller 121 can be configured by installing the above-mentioned program recorded and stored in the external storage device 123 on a computer. The external storage device 123 includes, for example, a disk such as an HDD, an optical disk such as a CD, an optical disk such as an MO, a semiconductor memory such as a USB memory, an SSD, etc. The storage device 121c and the external storage device 123 are configured as a computer-readable recording medium. Hereinafter, they are collectively referred to as a recording medium. In this specification, when a term such as a recording medium is used, sometimes only the storage device 121c is included alone, sometimes only the external storage device 123 is included alone, or sometimes both of them are included. In addition, it is also possible to provide a program to a computer by using a communication unit such as the Internet or a dedicated line instead of using the external storage device 123.

[0053] (2) Substrate processing steps

[0054] As one process of manufacturing a semiconductor device using the substrate processing apparatus, an example of a film forming process for forming a film on a wafer 200 as a substrate is described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 121. This also applies to the cleaning process described later.

[0055] In the film forming process of this method, step 1, step 2 and step 3 are performed non-simultaneously for a specified number of times (n times, n is an integer greater than 1 or 2). Step 1 supplies raw material gas to the wafer 200 in the processing container, step 2 supplies the first reaction gas to the wafer 200 in the processing container, and step 3 supplies the second reaction gas to the wafer 200 in the processing container.

[0056] In addition, the following describes an example in which a silicon oxynitride film (SiON film) is formed as a film on the wafer 200 .

[0057] (Wafer loading and wafer cassette loading)

[0058] When multiple wafers 200 are loaded (wafer loading) into the wafer box 217, Figure 1 As shown, a wafer cassette 217 supporting a plurality of wafers 200 is lifted up by a cassette elevator 115 and carried into the processing chamber 201 (cassette loading).

[0059] (Pressure adjustment and temperature adjustment)

[0060] After the wafer box is loaded, the vacuum pump 246 is used to perform vacuum exhaust so that the space in the processing chamber 201, that is, the space where the wafer 200 exists, becomes the desired pressure. At this time, the APC valve 244 is feedback-controlled based on the pressure information measured by the pressure sensor 245. In addition, the heater 207 is used to heat the wafer 200 in the processing chamber 201 so that it reaches the desired processing temperature. In addition, the exhaust pipe heater 231h is used to heat the exhaust pipe 231 so that the temperature inside the exhaust pipe 231 becomes the desired temperature. Here, the exhaust pipe 231 is preferably heated to a temperature (for example, 150 to 250°C) that can suppress the film forming gas exhausted into the exhaust pipe 231 during the film forming process described later and the adhesion and accumulation of its byproducts in the exhaust pipe 231. In addition, the rotation mechanism 267 starts to rotate the wafer 200.

[0061] (Film forming treatment)

[0062] After that, execute the following steps 1 to 3 in sequence.

[0063] [Step 1]

[0064] In this step, a source gas is supplied to the wafer 200 in the processing chamber 201 .

[0065] Specifically, the valve 243a is opened to allow the source gas to flow into the gas supply pipe 232a. The source gas is flow-controlled by the MFC 241a, supplied into the processing chamber 201 through the nozzle 249a, and exhausted from the exhaust port 231a.

[0066] The processing temperature when the raw material gas is supplied in this step is 250 to 800° C., preferably 400 to 700° C. The same temperature conditions can be applied to other steps in the film forming process.

[0067] It should be noted that the expression of a numerical range such as "250-800°C" in this specification means that the lower limit and the upper limit are included in the range. Therefore, for example, "250-800°C" means "above 250°C and below 800°C". The same applies to other numerical ranges. In addition, the processing temperature in this specification refers to the temperature of the wafer 200 or the temperature in the processing chamber 201. This also applies to the following description.

[0068] By supplying chlorosilane-based gas as a raw material gas to the wafer 200 under the above conditions, a silicon (Si)-containing layer containing chlorine (Cl) is formed as a first layer on the outermost surface of the wafer 200 serving as the base. In this specification, the Si-containing layer containing Cl is also referred to as a Si-containing layer.

[0069] As the raw material gas, for example, a silane-based gas containing Si as the main element constituting the film formed on the wafer 200 can be used. As the silane-based gas, for example, a gas containing Si and a halogen, that is, a halosilane-based gas can be used. Halogen includes chlorine (Cl), fluorine (F), bromine (Br), iodine (I), etc. As the halosilane-based gas, for example, the above-mentioned chlorosilane-based gas containing Si and Cl can be used.

[0070] As the raw material gas, for example, chlorosilane gas such as monochlorosilane (SiH3Cl) gas, dichlorosilane (SiH2Cl2) gas, trichlorosilane (SiHCl3) gas, tetrachlorosilane (SiCl4) gas, hexachlorodisilane gas (Si2Cl6) gas, octachlorotrisilane (Si3Cl8) gas, tetrakis(dimethylamino)silane (Si[N(CH3)2]4) gas, tris(dimethylamino)silane (Si[N(CH3)2]3H) gas, etc., containing Si and amino group, i.e., aminosilane gas, can also be used. As the raw material gas, one or more of them can be used.

[0071] As the inert gas, for example, inert gases such as nitrogen (N2), argon (Ar), helium (He), neon (Ne), and xenon (Xe) can be used. As the inert gas, one or more of them can be used. This also applies to each step described later.

[0072] After the first layer is formed, the valve 243a is closed to stop the supply of the raw material gas into the processing chamber 201. Then, the processing chamber 201 is evacuated to remove the gas remaining in the processing chamber 201. At this time, the valves 243g and 243h are opened to supply the inert gas into the processing chamber 201.

[0073] [Step 2]

[0074] After step 1 is completed, the first reaction gas is supplied to the wafer 200 in the processing chamber 201 , that is, the first layer formed on the wafer 200 .

[0075] Specifically, the valve 243b is opened to allow the first reaction gas to flow into the gas supply pipe 232b. The first reaction gas is flow-controlled by the MFC 241b, supplied into the processing chamber 201 through the nozzle 249b, and exhausted from the exhaust port 231a.

[0076] As the first reaction gas for the wafer 200, for example, a nitriding gas can be used. As the nitriding gas, for example, by supplying nitrogen (N) and a gas containing H, at least a portion of the first layer formed on the wafer 200 is modified (nitrided). As a result, Cl can be separated from the first layer, and the N component contained in the gas containing N and H can be introduced into the first layer. By modifying the first layer in this way, a layer containing Si and N, that is, a silicon nitride layer (SiN layer) is formed as a second layer on the wafer 200.

[0077] As the first reaction gas, for example, ammonia (NH3) gas, diazenium (N2H2) gas, hydrazine (N2H4) gas, N3H8 gas or other hydrogen nitride gas can be used. As the first reaction gas, one or more of these can be used.

[0078] After the second layer is formed, the valve 243b is closed to stop supplying the first reaction gas into the processing chamber 201. Then, the processing chamber 201 is evacuated to remove gaseous substances and the like remaining in the processing chamber 201 from the processing chamber 201. Then, the gas and the like remaining in the processing chamber 201 are removed from the processing chamber 201 through the same processing process as the purging in step 1.

[0079] [Step 3]

[0080] After step 2 is completed, the second reaction gas is supplied to the wafer 200 in the processing chamber 201 , that is, the second layer formed on the wafer 200 .

[0081] Specifically, the valve 243d is opened to allow the second reaction gas to flow into the gas supply pipe 232d. The second reaction gas is flow-controlled by the MFC 241d, supplied into the processing chamber 201 through the nozzle 249b, and exhausted from the exhaust port 231a.

[0082] By supplying, for example, an O-containing gas as the second reaction gas to the wafer 200, at least a portion of the second layer formed on the wafer 200 is modified (oxidized). As a result, Cl can be removed from the second layer, and the O component contained in the O-containing gas can be introduced into the second layer. By modifying the second layer in this way, a silicon oxynitride layer (SiON layer) containing Si, O, and N is formed on the wafer 200 as the third layer.

[0083] As the second reaction gas, for example, oxygen (O2) gas, nitrous oxide (N2O) gas, nitric oxide (NO) gas, nitrogen dioxide (NO2) gas, carbon monoxide (CO) gas, carbon dioxide (CO2) gas, etc. can be used. As the second reaction gas, one or more of them can be used.

[0084] After the third layer is formed, the valve 243d is closed to stop supplying the second reaction gas into the processing chamber 201. Then, the processing chamber 201 is evacuated to remove gaseous substances and the like remaining in the processing chamber 201 from the processing chamber 201. Then, the gas and the like remaining in the processing chamber 201 are removed from the processing chamber 201 through the same processing process as the purging in step 1.

[0085] [Number of times the regulations are implemented]

[0086] By performing the above-mentioned cycle of steps 1 to 3 in sequence non-simultaneously, that is, asynchronously, n times, it is possible to form, for example, a SiON film of a predetermined thickness as a film of a predetermined thickness on the surface of the wafer 200 as a base.

[0087] (Post-purge and atmospheric pressure recovery)

[0088] After the film forming process is completed, an inert gas is supplied from each gas supply pipe 232e, 232f into the processing chamber 201 as a purge gas, and the gas is exhausted from the exhaust port 231a. Thus, the processing chamber 201 is purged (post-purge). After that, the atmosphere in the processing chamber 201 is replaced with the inert gas, and the pressure in the processing chamber 201 is restored to normal pressure (restored to atmospheric pressure).

[0089] (Cassette unloading and wafer release)

[0090] After that, the sealing cover 219 is lowered, and the processed wafer 200 is carried out to the outside of the reaction tube 203 while being supported by the wafer box 217 (wafer box unloading). After the wafer box is unloaded, the lower end opening of the manifold 209 is sealed by the baffle 219s. The processed wafer 200 is taken out of the wafer box 217 (wafer release).

[0091] When the above-mentioned substrate processing, i.e., film forming processing, is performed, the film forming gas, its byproducts, and their reactants (e.g., silicon oxide, silicon oxynitride) may adhere to or accumulate inside the exhaust system (e.g., the inside of the exhaust pipe 231), the GV 247 provided in the exhaust pipe 231, the APC valve 244, etc. These attachments or accumulations (hereinafter, simply referred to as accumulations) may adhere to the valve bodies of the GV 247 and the APC valve 244, or the periphery of the valve bodies, hindering their movements or becoming particles, thereby affecting the film forming processing.

[0092] If film forming is repeated while deposits are attached to the exhaust system, the deposits may become fixed depending on the number of film forming processes. The fixed deposits are difficult to etch even if a clean gas is supplied to the exhaust system, and tend to be difficult to remove from the exhaust system.

[0093] In the present disclosure, after the above-mentioned substrate processing step, a cleaning step described later is performed to remove deposits attached to the inside of the exhaust system.

[0094] (3) Cleaning process

[0095] As one step of the manufacturing process of the semiconductor device using the substrate processing apparatus, a cleaning example of removing deposits adhering to the inside of the exhaust system, specifically, to the inside of the GV 247 and the APC valve 244 provided in the exhaust pipe 231 will be described.

[0096] In the cleaning process of this embodiment, deposits attached to at least one of the GV 247 and the APC valve 244 are removed by performing the following steps a and b. In step a, with the GV 247 and the APC valve 244 opened, either the cleaning gas or the additive gas having a molecular structure different from that of the cleaning gas is supplied to the exhaust pipe 231 connected to the processing container and provided with the GV 247 and the APC valve 244 through the gas supply pipe connected to the upstream side of at least one of the GV 247 and the APC valve 244. In step b, while performing step a, the other of the cleaning gas and the additive gas is supplied to the exhaust pipe 231 through the processing container.

[0097] Hereinafter, an example of supplying the cleaning gas to the exhaust pipe 231 via the gas supply pipe 232e connected to the upstream side of the APC valve 244 and the downstream side of the GV 247, in other words, connected between the GV 247 and the APC valve 244, in step a will be described. In addition, an example of supplying the additional gas to the exhaust pipe 231 via the inside of the processing chamber 201 in step b will be described.

[0098] (Pressure adjustment and temperature adjustment)

[0099] After the wafer is released, vacuum pump 246 is used to perform vacuum exhaust so that the exhaust pipe 231 has the desired pressure. At this time, the pressure in the exhaust pipe 231 is measured by pressure sensor 245, and APC valve 244 is feedback-controlled based on the measured pressure information. At this time, GV 247 is in an open state (open state). In addition, the exhaust pipe heater 231h is used for heating so that the exhaust pipe 231 has the desired processing temperature. At this time, the power supply to the exhaust pipe heater 231h is feedback-controlled based on the temperature information detected by the exhaust pipe temperature sensor so that the exhaust pipe 231 has the desired temperature distribution. In addition, the gas supply pipe cooler 242e is used for cooling so that the gas supply pipe 232e has the desired processing temperature. At this time, the power supply to the gas supply pipe cooler 242e is feedback-controlled based on the temperature information detected by the supply pipe temperature sensor so that the gas supply pipe 232e has the desired temperature distribution. It should be noted that the cleaning step may also be performed in a state where the wafer cassette 217 without the wafer 200 mounted thereon is inserted into the reaction tube 203 and the lower end opening of the manifold 209 is sealed by the sealing cap 219 .

[0100] (Adjustment of the opening degree of APC valve 244)

[0101] The opening of the valve body of the APC valve 244 is adjusted (controlled) to an opening smaller than the fully open opening. The fully open opening of the APC valve 244 refers to a state in which the surface of the valve body of the APC valve 244 is approximately parallel to the extension direction of the exhaust pipe 231 (the direction of gas flow), for example, when a butterfly valve is used as the APC valve 244. In this embodiment, for example, the surface of the valve body of the APC valve 244 is adjusted to a prescribed angle (for example, 45°) less than 90° relative to the direction of gas flow. It should be noted that the timing of adjusting the opening of the APC valve 244 is not limited to after the pressure adjustment and the temperature adjustment in the exhaust pipe 231, and may also be simultaneously with the wafer release, the pressure adjustment in the exhaust pipe 231, and the temperature adjustment, or from a time earlier than them. GV 247 maintains an open state.

[0102] (Cleaning treatment)

[0103] Then, perform the following steps a and b at the same time:

[0104] [Step a]

[0105] In this step, the cleaning gas is supplied from the first supply system into the exhaust pipe 231 .

[0106] Specifically, valve 243e is opened to allow the cleaning gas to flow into the gas supply pipe 232e. The cleaning gas is flow-regulated by MFC 241e and supplied to the exhaust pipe 231 via the gas supply pipe 232e (cleaning gas supply). At this time, at least one of valves 243j and 243k may be opened to supply an inactive gas into the exhaust pipe 231.

[0107] The processing conditions when supplying the cleaning gas in this step are exemplified as follows:

[0108] The temperature in the exhaust pipe 231 is 25 (room temperature) to 150°C, preferably 50 to 100°C.

[0109] Pressure in exhaust pipe 231: 30~40000Pa,

[0110] Temperature in the gas supply pipe 232e: 15 to 70°C, preferably 30 to 50°C,

[0111] Clean gas supply flow rate: 0.5~10slm,

[0112] Inert gas supply flow rate (per gas supply pipe): 0~20slm,

[0113] Each gas supply time: 5 to 300 minutes.

[0114] The temperature in the gas supply pipe 232e is preferably lower than the temperature in the exhaust pipe 231. The temperature in the exhaust pipe 231 in this step is preferably lower than the temperature in the exhaust pipe 231 in the above-mentioned film forming process. It should be noted that when the supply flow rate includes 0 slm, 0 slm means that the substance (gas) is not supplied.

[0115] As the cleaning gas, for example, halogen-containing gases such as silicon tetrachloride (SiCl4) gas, hydrogen chloride (HCl) gas, boron trichloride (BCl3) gas, chlorine (Cl2) gas, fluorine (F2) gas, hydrogen fluoride (HF) gas, silicon tetrafluoride (SiF4) gas, nitrogen trifluoride (NF3) gas, chlorine trifluoride (ClF3) gas, boron tribromide (BBr3) gas, silicon tetrabromide (SiBr4) gas and bromine (Br2) gas can be used. As the cleaning gas, one or more of them can be used. By reacting the halogen-containing gas with the deposits attached to the inside of the exhaust system, the deposits can be etched (removed).

[0116] As the cleaning gas, F2 gas, HF gas or other F-containing gas among the halogen-containing gases is preferably used, and HF gas among the F-containing gases is more preferably used. By using HF gas, deposits including oxides can be effectively removed even under low temperature conditions.

[0117] [Step b]

[0118] At the same time as step a is started, an additional gas is supplied into the processing chamber 201 from the second supply system.

[0119] Specifically, valve 243b is opened to flow additional gas into gas supply pipe 232b. The additional gas is flow-regulated by MFC 241b, supplied into processing chamber 201 via nozzle 249b, and exhausted from exhaust port 231a. At this time, additional gas is supplied into exhaust pipe 231 (additive gas supply). At this time, valves 243g and 243h may also be opened to supply inactive gas into processing chamber 201 via nozzles 249a and 249b, respectively.

[0120] The following are examples of processing conditions when the additional gas is supplied in this step:

[0121] Adding gas supply flow rate: 1~20slm,

[0122] Inert gas supply flow rate (per gas supply pipe): 0~20slm

[0123] The other processing conditions can be set to be the same as the processing conditions in step a.

[0124] As the additional gas, for example, a gas containing N and H, such as NH3 gas, N2H2 gas, N2H4 gas, or N3H8 gas, can be used. The gas containing N and H is a gas containing N and a gas containing H. As the additional gas, one or more of these can be used.

[0125] As the additional gas, for example, H 2 gas, a mixed gas of H 2 gas and O 2 gas, H 2 O gas or other H-containing gas can be used. As the additional gas, one or more of these can be used.

[0126] By using the above-mentioned additional gas, the reaction between the deposits (especially the deposits containing oxides) and the cleaning gas (especially the halogen-containing gas) can be promoted, and the removal efficiency of the deposits can be improved. It should be noted that the additional gas is a gas that does not substantially react with the deposits attached to at least one of the GV 247 and the APC valve 244 when used alone.

[0127] In this embodiment, it is preferable to use, as the additional gas, a gas having the same molecular structure as the first reaction gas used in the film forming process.

[0128] By simultaneously performing step a and step b under the above conditions, the cleaning gas and the additive gas are mixed in the exhaust pipe 231 .

[0129] By performing step a and step b under the above conditions, deposits attached to the inside (more specifically, each valve body and the peripheral part of the valve body) of at least one of the GV 247 and the APC valve 244 (hereinafter, sometimes referred to as the APC valve 244, etc.) are exposed to the cleaning gas and the additive gas and removed. Specifically, the cleaning gas supplied to the exhaust pipe 231 between the GV 247 and the APC valve 244 and the additive gas supplied to the processing chamber 201 are mixed on the downstream side of the GV 247. The mixed gas generated in this way can effectively remove deposits attached to the inside of the APC valve 244, etc.

[0130] After a predetermined time has passed, the valve 243e is closed to stop supplying the cleaning gas into the exhaust pipe 231. The valve 243b is closed to stop supplying the additive gas into the processing chamber 201. Then, the processing chamber 201 is vacuum-exhausted to remove gaseous substances and particles (hereinafter referred to as residual gas, etc.) remaining in the processing chamber 201 and the exhaust pipe 231. Then, the residual gas, etc. in the processing chamber 201 and the exhaust pipe 231 is removed (purged) from the processing chamber 201 through the same processing process as the purging in step 1.

[0131] (3) Effects of this method

[0132] According to this aspect, one or more of the following effects can be obtained.

[0133] (a) By simultaneously supplying the cleaning gas and the additive gas to the APC valve 244, etc., the etching rate of the deposits attached to the inside of the APC valve 244, etc. (particularly the valve body and the peripheral part of the valve body) can be increased compared to the case where the cleaning gas is supplied alone. That is, the removal efficiency can be improved. In addition, since the etching rate can be increased, the necessary supply amount of the cleaning gas can also be reduced.

[0134] By directly supplying the cleaning gas into the exhaust pipe 231 via the gas supply pipe 232 e connected between the GV 247 and the APC valve 244 , it is possible to prevent the cleaning gas from diffusing into the processing chamber 201 and causing excessive etching of components in the processing chamber 201 and affecting the environment in the processing chamber 201 .

[0135] By supplying the additive gas to the exhaust pipe 231 through the processing chamber 201, a gas flow from the processing chamber 201 to the exhaust pipe 231 can be formed, thereby suppressing the mixed gas of the cleaning gas and the additive gas from flowing back or diffusing into the processing chamber 201. Thus, the possibility of etching damage to the components in the processing chamber 201 can be further reduced.

[0136] By using a gas having the same molecular structure as the first reaction gas (film forming gas) used in the film forming process as the additional gas supplied through the processing chamber 201, the first reaction gas supply system and the additional gas supply system as the second supply system can be constituted by the same gas supply system (i.e., shared). As a result, the structure of the gas supply system can be simplified.

[0137] (b) By supplying the cleaning gas directly into the exhaust pipe 231 from the gas supply pipe 232e connected to the exhaust pipe 231 without passing through the process chamber 201, the cleaning gas and the additive gas can be mixed in the exhaust pipe 231 instead of in the process chamber 201. Thus, it is possible to prevent the mixed gas of the cleaning gas and the additive gas from excessively etching the components in the process chamber 201. In addition, the mixed gas as the etching gas is not consumed in the process chamber 201 (that is, the activity of the etching gas as the mixed gas is not reduced in the process chamber 201), and deposits attached to the inside of the APC valve 244 and the like can be removed more effectively.

[0138] (c) Since the gas supply pipe 232e is connected to the exhaust pipe 231 between the GV 247 and the APC valve 244, deposits attached to the inside of the APC valve 244, which is arranged downstream of the connection point of the gas supply pipe 232e, can be removed preferentially compared to deposits attached to the inside of the GV 247. That is, by mixing the cleaning gas and the additional gas near the upstream side of the APC valve 244, the etching efficiency for the APC valve 244 can be maximized.

[0139] (d) The gas supply pipe 232e is connected to the exhaust pipe 231 located between the GV 247 and the APC valve 244. Furthermore, the GV 247 is provided on the upstream side of the APC valve 244, thereby enabling preferential removal of deposits attached to the inside of the APC valve 244. As a result, the accuracy of the opening adjustment of the APC valve 244, which requires high-precision valve body opening adjustment, can be maintained at a higher state than that of the GV 247. In addition, the opening and closing failure of the valve body of the APC valve 244 can be prevented.

[0140] (e) Clean gas is supplied through the first supply system and additive gas is supplied through the second supply system, and clean gas can be supplied to the downstream side of GV 247 and the upstream side of APC valve 244 and the position closest to APC valve 244 in exhaust pipe 231 to generate a mixed gas of clean gas and additive gas. As a result, the amount of mixed gas adsorbed to other parts in exhaust pipe 231 and the amount of mixed gas reacting with other parts and / or other deposits attached to other parts can be minimized, so the etching speed of deposits attached to APC valve 244 (especially with priority to GV 247) can be increased. In addition, the temperature change caused by the clean gas passing through the exhaust pipe 231 is minimized, and the clean gas can be directly supplied to APC valve 244 at an appropriate temperature for obtaining an etching effect.

[0141] (f) In the cleaning process, by controlling the temperature in the gas supply pipe 232e to be lower than the temperature in the exhaust pipe 231, the etching rate of the deposits attached to the inside of the APC valve 244 and the like can be increased. Specifically, when a gas (e.g., HF gas) having a high etching rate in a low temperature region (e.g., 25 to 150°C) is used as the cleaning gas, by supplying the cleaning gas to the exhaust pipe 231 from the gas supply pipe 232e, which is lower than the exhaust pipe 231, the cleaning gas maintained at a low temperature can be supplied to the exhaust pipe 231 and the APC valve 244 and the like. Thus, the etching rate of the deposits attached to the inside of the APC valve 244 and the like can be increased. That is, by using a gas as the cleaning gas, the etching rate of the gas at a temperature different from the temperature in the exhaust pipe 231 (in this embodiment, a temperature lower than the temperature in the exhaust pipe 231), that is, the temperature in the gas supply pipe 232e, is greater than the etching rate at the temperature in the exhaust pipe 231.

[0142] (g) In the cleaning process, by not heating the gas supply pipe 232e, the temperature rise of the cleaning gas supplied from the gas supply pipe 232e to the exhaust pipe 231 can be suppressed. The gas supply pipe 232e in this embodiment is not equipped with a gas supply pipe heater, so the gas supply pipe 232e is not heated. Thus, when the cleaning gas is supplied from the gas supply pipe 232e to the exhaust pipe 231, the temperature rise of the cleaning gas can be suppressed. Therefore, for example, when a gas having a higher etching rate in a low temperature region is used as the cleaning gas, the reduction in the etching rate of deposits attached to the inside of the APC valve 244 and the like can be suppressed.

[0143] (h) By controlling the temperature in the exhaust pipe 231 during the cleaning process to be lower than the temperature in the exhaust pipe 231 during the film forming process, the etching rate of the deposits attached to the inside of the APC valve 244 and the like can be increased. Specifically, in the present embodiment, during the film forming process, the temperature in the exhaust pipe 231 is set to a relatively high temperature (e.g., 150 to 250° C.), which can suppress the film forming gas exhausted into the exhaust pipe 231 due to the film forming process and its byproducts from adhering to the exhaust pipe 231. On the other hand, in the cleaning process, when a gas having a higher etching rate in a low temperature region is used as the cleaning gas, the etching rate of the deposits is higher in a lower temperature state than in a state where the cleaning gas is heated to the temperature of the exhaust pipe 231 during the film forming process. That is, if the temperature in the exhaust pipe 231 is maintained at the above-mentioned high temperature during the cleaning process, the etching rate of the deposits may be reduced. In this embodiment, by making the temperature in the exhaust pipe 231 during the cleaning process lower than the temperature in the exhaust pipe 231 during the film forming process, the etching rate of deposits attached to the inside of the APC valve 244 and the like can be increased.

[0144] (i) During the cleaning process, the opening of the valve body of the APC valve 244 is controlled so as to be smaller than the fully opened opening. Thus, the amount of cleaning gas (stream) per unit area of ​​the valve body that contacts (collides with) the valve body of the APC valve 244 can be increased relative to the flow of the cleaning gas, thereby improving the efficiency of removing deposits attached to the valve body of the APC valve 244.

[0145] (4) Modification

[0146] The cleaning process in this embodiment can be changed as shown in the following modified examples. Unless otherwise specified, the processing process and processing conditions in each step of each modified example can be set to be the same as the processing process and processing conditions in each step of the above-mentioned processing flow. In addition, the structure of the substrate processing device in this embodiment can be changed as shown in the following modified examples. The substrate processing device used in each modified example is the same as the substrate processing device used in the above-mentioned modified example unless otherwise specified. Figure 1 The substrate processing device shown in the figure is similarly constructed and Figure 1 Elements substantially the same as those described in the above are denoted by the same reference numerals, and their description is omitted. These modified examples can be combined arbitrarily.

[0147] (Variant 1)

[0148] In step a of the cleaning process, the cleaning gas may be supplied to the exhaust pipe 231 via the gas supply pipe 232f connected to the upstream side of either the APC valve 244 or the GV 247. In this modification, the cleaning gas supply system as the first supply system is constituted by the gas supply pipe 232f, the MFC 241f, and the valve 243f.

[0149] In this modification, at least a part of the effects described in the above embodiment can be obtained. In addition, in this modification, the mixed gas of the cleaning gas and the additive gas can be used to efficiently remove the deposits attached to both the GV 247 and the APC valve 244. In addition, by mixing the cleaning gas and the additive gas near the upstream side of the GV 247, the deposits attached to the inside of the GV 247 can be removed preferentially compared to the deposits attached to the inside of the APC valve 244.

[0150] (Variant 2)

[0151] like Figure 4 As shown, in step a of the cleaning process, the additive gas may be directly supplied into the exhaust pipe 231 through the first supply system, and in step b, the cleaning gas may be supplied into the exhaust pipe 231 through the processing chamber 201 through the second supply system.

[0152] Specifically, in step a, in detail, an additive gas may be supplied to the exhaust pipe 231 via the gas supply pipe 232e connected between the GV 247 and the APC valve 244 instead of the cleaning gas. In addition, in the exhaust pipe 231, an additive gas may be supplied via the gas supply pipe 232f connected to a position upstream of either the APC valve 244 or the GV 247 instead of the cleaning gas. In this modification, at least one of the gas supply pipes 232e and 232f constitutes a first supply system configured to supply an additive gas. In addition, a cleaning gas may be supplied to the processing chamber 201 via the gas supply pipe 232b instead of the additive gas. In this modification, the gas supply pipe 232b constitutes a second supply system configured to supply a cleaning gas.

[0153] In this modification, at least a part of the effects described in the above-mentioned manner can also be obtained. In addition, in this modification, the deposits attached to the inside of either the GV 247 or the APC valve 244 can also be removed by using a cleaning gas. In addition, in step a, when the additional gas is supplied to the exhaust pipe 231 via the gas supply pipe 232e, the cleaning gas and the additional gas can be mixed near the upstream side of the APC valve 244. Thus, the deposits attached to the APC valve 244 can be removed preferentially and efficiently compared to the deposits attached to the GV 247. On the other hand, when the additional gas is supplied to the exhaust pipe 231 via the gas supply pipe 232f, the cleaning gas and the additional gas can be mixed near the upstream side of the GV 247. Thus, the deposits attached to the GV 247 can be removed preferentially and efficiently compared to the deposits attached to the APC valve 244. In addition, by supplying the cleaning gas through the inside of the processing chamber 201, the deposits attached to the processing chamber 201 can also be removed at the same time.

[0154] (Variant 3)

[0155] like Figure 5 As shown in FIG. 2 , an APC valve 244 and a GV 247 may be provided in the exhaust pipe 231 in this order from the upstream side.

[0156] Furthermore, in step a, the cleaning gas may be supplied into the exhaust pipe 231 through the first supply system via the gas supply pipe 232e connected between the GV 247 and the APC valve 244. In addition, the cleaning gas may be supplied into the exhaust pipe 231 through the first supply system via the gas supply pipe 232f connected to the upstream side of either the APC valve 244 or the GV 247.

[0157] In this modification, at least a part of the effects described in the above-mentioned method can also be obtained. In addition, in this modification, further, in step a, when the clean gas is supplied to the exhaust pipe 231 via the gas supply pipe 232e, the clean gas can be mixed with the additive gas near the upstream side of the GV 247. Thus, the deposits attached to the GV 247 can be removed preferentially and efficiently compared with the deposits attached to the APC valve 244. On the other hand, when the clean gas is supplied to the exhaust pipe 231 via the gas supply pipe 232f, the clean gas can be mixed with the additive gas near the upstream side of the APC valve 244. Thus, the deposits attached to the APC valve 244 can be removed preferentially and efficiently compared with the deposits attached to the GV 247.

[0158] (Variant 4)

[0159] like Figure 6As shown in FIG. 2 , an APC valve 244 and a GV 247 may be provided in the exhaust pipe 231 in this order from the upstream side.

[0160] Moreover, in step a, an additive gas may be supplied to the exhaust pipe 231 via the gas supply pipe 232e connected between the GV 247 and the APC valve 244 instead of the cleaning gas. In addition, in the exhaust pipe 231, an additive gas may be supplied via the gas supply pipe 232f connected at a position upstream of either the APC valve 244 or the GV 247 instead of the cleaning gas. In this modification, as in Modification 2, at least one of the gas supply pipes 232e and 232f constitutes a first supply system configured to supply an additive gas. In addition, a cleaning gas may be supplied to the processing chamber 201 via the gas supply pipe 232b instead of the additive gas. In this modification, as in Modification 2, the gas supply pipe 232b constitutes a second supply system configured to supply a cleaning gas.

[0161] In this modification, at least a part of the effects described in the above-mentioned manner can also be obtained. In addition, in this modification, the deposits attached to the inside of either the GV 247 or the APC valve 244 can also be removed by using a cleaning gas. In addition, in step a, when the additional gas is supplied to the exhaust pipe 231 via the gas supply pipe 232e, the cleaning gas and the additional gas can be mixed near the upstream side of the GV 247. Thus, the deposits attached to the GV 247 can be removed preferentially and efficiently compared with the deposits attached to the APC valve 244. On the other hand, when the additional gas is supplied to the exhaust pipe 231 via the gas supply pipe 232f, the cleaning gas and the additional gas can be mixed near the upstream side of the APC valve 244. Thus, the deposits attached to the APC valve 244 can be removed preferentially and efficiently compared with the deposits attached to the GV 247. In addition, by supplying the cleaning gas through the inside of the processing chamber 201, the deposits attached to the processing chamber 201 can also be removed at the same time.

[0162] <Other aspects of the present disclosure>

[0163] The embodiments of the present disclosure have been specifically described above. However, the present disclosure is not limited to the above embodiments, and various modifications can be made without departing from the gist of the present disclosure.

[0164] In the above-mentioned method, the case where either a cleaning gas or an additive gas is supplied to the processing chamber 201 via the gas supply pipe 232b and the nozzle 249b in step b is used as an example for explanation. However, the present disclosure is not limited to such a method. For example, in step b, either a cleaning gas or an additive gas may be supplied to the processing chamber 201 via the gas supply pipe 232c and the nozzle 249c. That is, the second supply system may also be constituted by the gas supply pipe 232c and the nozzle 249c. It should be noted that the gas supply hole 250c provided at the front end of the nozzle 249c opens below the wafer arrangement area and near the exhaust port 231a.

[0165] In this case, the same effect as in the above method can be obtained. In addition, by supplying cleaning gas or additive gas through the gas supply hole 250c located below the wafer arrangement area, the influence of these gases on the processing chamber 201 (for example, unnecessary etching of components in the wafer arrangement area such as the reaction tube 203, and the influence on substrate processing due to gas adhesion to components in the wafer arrangement area) can be reduced.

[0166] In addition, in the above-mentioned method, the case where a cleaning gas or an additive gas is supplied from either the gas supply pipe 232e or the gas supply pipe 232f to the exhaust pipe 231 in step a is described as an example. However, the present disclosure is not limited to such a method. For example, in step a, a cleaning gas or an additive gas may be supplied from both the gas supply pipe 232e (first gas supply pipe) and the gas supply pipe 232f (second gas supply pipe) to the exhaust pipe 231. That is, the first supply system may also be configured to include the gas supply pipe 232e and the gas supply pipe 232f. In this case, at least a part of the effects described in the above-mentioned method can also be obtained. In this method, there is also the following situation: by mixing the cleaning gas with the additive gas at a position near the upstream side of each of the GV 247 and the APC valve 244, the removal effect of the deposits attached to both can be improved.

[0167] In addition, in the above method, the cleaning process can be performed after performing several batches of substrate processing steps including the above film forming process, or the cleaning process can be performed when performing each batch of substrate processing steps. It should be noted that here, the substrate processing step (for example, from wafer box loading to wafer box unloading) is performed once as one batch.

[0168] In addition, in the above-mentioned method, the case where the gas supply pipe coolers 242e and 242f are respectively installed on the peripheries of the gas supply pipes 232e and 232f is described as an example. However, the present disclosure is not limited to such a method. For example, a gas supply pipe cooler may not be installed on at least one of the peripheries of the gas supply pipes 232e and 232f. In addition, for example, a gas supply pipe heater may be installed on at least one of the peripheries of the gas supply pipes 232e and 232f. In this case, during the cleaning process, by controlling the gas supply pipe heater instead of heating the gas supply pipe 232e, the effect of removing deposits attached to the inside of the APC valve 244, etc. can also be improved.

[0169] In addition, in the above method, it is explained that the additive gas is a gas that promotes the reaction between the deposit and the cleaning gas, and is a gas that does not react with the deposit when it exists alone. This does not exclude the use of a cleaning gas with an etching effect as the additive gas. As long as it is a gas that can promote the etching effect of the deposit by being supplied simultaneously with the cleaning gas, a gas with an etching effect can also be used as the additive gas.

[0170] In addition, in the above-mentioned method, the case where a SiON film is formed on the surface of the wafer 200 during the film forming process is described as an example. However, the present disclosure is not limited to such a method. For example, an oxide film (oxide) such as a silicon oxide film (SiO film), a silicon oxide carbide film (SiOC film), and a silicon oxide carbonitride film (SiOCN film) may also be formed. In addition, for example, a nitride film (nitride) such as a silicon nitride film (SiN film), a silicon carbide film (SiC film), and a silicon carbonitride film (SiCN film) may also be formed. In addition, a film (compound) containing elements other than Si may also be formed. In these cases, the same effect as in the above-mentioned method can also be obtained.

[0171] In the above embodiment, it is preferable to control the opening of the valve body of the APC valve 244 to change with the elapse of the treatment time during the cleaning process. This can promote the peeling of deposits attached to the movable part of the valve body and promote the removal of the deposits.

[0172] In addition, in the above-mentioned embodiment, the first supply system and the second supply system may be directly connected to the exhaust pipe 231, respectively. In other words, both the gas supply pipe for supplying the clean gas and the gas supply pipe for supplying the additive gas may be directly connected to the exhaust pipe 231. The connection positions of the first supply system and the second supply system to the exhaust pipe 231 may be the same position relative to the GV 247 and the APC valve 244, or one of the first supply system and the second supply system may be located upstream of either the GV 247 or the APC valve 244, and the other may be located between the GV 247 and the APC valve 244. In this embodiment, at least a part of the effects described in the above-mentioned embodiment can also be obtained.

[0173] The recipe used in each process is preferably prepared separately according to the process content, and recorded and stored in the storage device 121c via the telecommunication line and the external storage device 123. Furthermore, when starting each process, the CPU 121a preferably selects an appropriate recipe from the plurality of recipes recorded and stored in the storage device 121c according to the process content.

[0174] In the above-mentioned method, an example of forming a film using a batch-type substrate processing device that processes multiple substrates at a time is described. The present disclosure is not limited to the above-mentioned method, and for example, it can also be appropriately applied when a film is formed using a single-piece substrate processing device that processes one or several substrates at a time. In addition, in the above-mentioned method, an example of forming a film using a substrate processing device having a hot-wall type processing furnace is described. The present disclosure is not limited to the above-mentioned method, and it can also be appropriately applied when a film is formed using a substrate processing device having a cold-wall type processing furnace.

[0175] When these substrate processing apparatuses are used, each process can be performed with the same process procedures and process conditions as those of the above-mentioned embodiments and modified examples, and the same effects as those of the above-mentioned embodiments and modified examples can be obtained.

[0176] The above-mentioned aspects and modifications can be used in combination as appropriate. The processing procedure and processing conditions at this time can be, for example, the same as the processing procedure and processing conditions of the above-mentioned aspects and modifications.

Claims

1. A substrate processing device, comprising: Processing containers, an exhaust pipe connected to the processing container, an on-off valve provided on the exhaust pipe, a pressure regulating valve provided on the exhaust pipe, a first supply system for supplying a clean gas or an additive gas having a molecular structure different from that of the clean gas into the exhaust pipe via a gas supply pipe, wherein the gas supply pipe is connected to the exhaust pipe at a position upstream of at least one of the on-off valve and the pressure regulating valve, a second supply system for supplying the other of the cleaning gas or the additional gas into the processing container, and The control unit is configured to control the on-off valve, the pressure regulating valve, the first supply system and the second supply system to perform a cleaning process with the on-off valve and the pressure regulating valve open, wherein the cleaning process simultaneously supplies the cleaning gas and the additive gas.

2. The substrate processing apparatus according to claim 1, wherein: In the cleaning process, the cleaning gas and the additional gas are mixed in the exhaust pipe.

3. The substrate processing apparatus according to claim 1, wherein: In the cleaning process, deposits attached to at least one of the on-off valve and the pressure regulating valve are removed by exposing the deposits to the cleaning gas and the additional gas.

4. The substrate processing apparatus according to claim 1, wherein: The gas supply pipe is connected to the exhaust pipe between the on-off valve and the pressure regulating valve.

5. The substrate processing apparatus according to claim 4, wherein: The on-off valve is provided on the upstream side of the pressure regulating valve.

6. The substrate processing apparatus according to claim 4, wherein: The first supply system supplies the cleaning gas, and the second supply system supplies the additive gas.

7. The substrate processing apparatus according to claim 6, wherein: The cleaning gas is a gas whose etching rate increases at a temperature different from the temperature of the exhaust pipe during the cleaning process.

8. The substrate processing apparatus according to claim 4, wherein: The first supply system supplies the additive gas, and the second supply system supplies the cleaning gas.

9. The substrate processing apparatus according to claim 1, wherein: The gas supply pipe is connected to the exhaust pipe on the upstream side of any one of the on-off valve and the pressure regulating valve.

10. The substrate processing apparatus according to claim 9, wherein: The on-off valve is provided on the downstream side of the pressure regulating valve.

11. The substrate processing apparatus according to claim 1, wherein: The cleaning gas is a halogen-containing gas.

12. The substrate processing apparatus according to claim 1, wherein: The cleaning gas is HF gas.

13. The substrate processing apparatus according to claim 1, wherein: The added gas is a H-containing gas.

14. The substrate processing apparatus according to claim 1, wherein: The substrate processing apparatus includes an exhaust pipe heater configured to heat the exhaust pipe. The control unit is configured to be capable of controlling the exhaust pipe heater so that the temperature of the gas supply pipe is lower than the temperature of the exhaust pipe during the cleaning process.

15. The substrate processing apparatus according to claim 14, wherein: In the cleaning process, the gas supply pipe is not heated.

16. The substrate processing apparatus according to claim 14 or 15, wherein: When the cleaning gas is at a temperature lower than that of the exhaust pipe, the cleaning gas has a higher etching rate on deposits attached to at least one of the on-off valve and the pressure regulating valve than when the cleaning gas is at a temperature of the exhaust pipe.

17. The substrate processing apparatus according to claim 1, wherein: The control unit is configured to be capable of controlling the pressure regulating valve during the cleaning process so that the opening degree of the pressure regulating valve becomes smaller than a fully open opening.

18. A cleaning method, comprising: performing the following steps (a) and (b) to remove deposits attached to at least one of an on-off valve and a pressure regulating valve. Step (a), supplying either a cleaning gas or an additive gas having a molecular structure different from that of the cleaning gas through a gas supply pipe connected to an exhaust pipe connected to a processing container and provided with the on-off valve and the pressure regulating valve, with the on-off valve and the pressure regulating valve being open, wherein the gas supply pipe is connected to a position on the upstream side of at least one of the on-off valve and the pressure regulating valve, The step (b) is to supply the other of the cleaning gas and the additional gas into the exhaust pipe through the processing container while executing the step (a).

19. A method for manufacturing a semiconductor device, comprising the steps of removing deposits attached to at least one of an on-off valve and a pressure regulating valve by performing the following steps (a) and (b), Step (a), supplying either a cleaning gas or an additive gas having a molecular structure different from that of the cleaning gas through a gas supply pipe connected to an exhaust pipe connected to a processing container and provided with the on-off valve and the pressure regulating valve, with the on-off valve and the pressure regulating valve being open, wherein the gas supply pipe is connected to a position on the upstream side of at least one of the on-off valve and the pressure regulating valve, The step (b) is to supply the other of the cleaning gas and the additional gas into the exhaust pipe through the processing container while executing the step (a).

20. A computer-readable recording medium having a program recorded thereon, the program causing a substrate processing apparatus to execute the following process through a computer, the process comprising removing deposits attached to at least one of an on-off valve and a pressure regulating valve by performing the following process (a) and process (b), In step (a), a gas supply pipe connected to a processing container and provided with the on-off valve and the pressure regulating valve is used to supply a cleaning gas or an additive gas having a molecular structure different from that of the cleaning gas through a gas supply pipe when the on-off valve and the pressure regulating valve are open, wherein the gas supply pipe is connected to a position on the upstream side of at least one of the on-off valve and the pressure regulating valve. The process (b) is to supply the other of the cleaning gas and the additional gas into the exhaust pipe through the processing container while executing the process (a).

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