Method for repairing large-scale consistency defect of semiconductor chip by using electronic wind power

Abstract

The invention relates to a method for repairing large-scale consistency defects of a semiconductor chip by using electronic wind power, which belongs to the technical field of semiconductors, and is characterized in that high-frequency alternating current is accessed to the semiconductor chip for three times, and the current directions of the high-frequency alternating current accessed for three times are vertical to each other; the atoms in the semiconductor chip are sequentially impacted back and forth from three directions by the electrons of the high-frequency alternating current, so that the atoms in the semiconductor chip are sequentially and regularly arranged from the three directions to positions with lower energy, and the defects in the three current directions in the semiconductor chip are further repaired. The method has pertinence on defects in the semiconductor chip, so that the repairing effect is more effective; according to the method, the local defect can be repaired, and the electric field is applied to the local defect, so that the repair work of the local defect can be completed while the rest part is not influenced.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and in particular relates to a method for repairing large-scale consistent defects of semiconductor chips using electronic wind power. Background Art

[0002] Semiconductor chips are widely used in many fields such as industrial electronics, communication technology, medical electronics and the Internet of Things. They are the core components of products such as smart phones, computers, industrial automation equipment, communication base stations, medical equipment and Internet of Things terminals, responsible for data processing, transmission and control functions. The application of semiconductor chips has greatly promoted the intelligence, efficiency and interconnection of these fields, and has played a vital role in scientific and technological progress and social development.

[0003] During the manufacturing or processing of semiconductor chips, micro-cracks or other microscopic defects often occur inside due to factors such as uneven stress distribution, cutting or extrusion. Ultimately, microscopic defects often expand under some extreme working conditions, causing permanent damage to the component and failing to achieve the original use effect. There are currently many methods to suppress the generation of material defects. For example, many scholars have effectively controlled the generation of defects such as dislocations inside the material by continuously optimizing and adjusting the processing parameters of the material; and some scholars have found that the surface defects of the material can be reduced by coating the material. However, these methods cannot completely suppress or repair the defects inside the material.

[0004] Current methods for repairing semiconductor chips, such as a semiconductor chip manufacturing device and repair method disclosed in an invention patent application with application publication number CN115458447A, and a method for repairing lattice defects on the surface of an epitaxial wafer disclosed in an invention patent application with application publication number CN118263091A, only repair the surface of the semiconductor chip and cannot repair internal microscopic defects.

[0005] The invention patent application with publication number CN101562153A also discloses a semiconductor device and a method for manufacturing the semiconductor device. The application records a heat treatment repair method, i.e. irradiating a single crystal semiconductor layer with a laser beam to place the single crystal semiconductor layer in a partially melted state for recrystallization, thereby repairing the crystal defects. This repair method requires a long process of heating, keeping warm and cooling, which is time-consuming and inefficient. The melting and recrystallization processes will affect the surrounding areas of the defects, and have poor targeting. Summary of the invention

[0006] The purpose of the present invention is to provide a method for large-scale consistent defect repair of semiconductor chips using electronic wind power, so as to solve the problems that internal defects cannot be completely suppressed in existing semiconductor chip manufacturing and processing, and existing repair methods only repair the surface of semiconductor chips but cannot achieve internal repair.

[0007] In order to achieve the above object, the technical solution of the present invention is as follows: The present invention relates to a method for repairing semiconductor chip defects on a large scale with consistent performance using electronic wind power, which comprises the following steps: connecting high-frequency alternating current to the semiconductor chip three times, the current directions of the three connected high-frequency alternating currents being perpendicular to each other, using the electrons of the high-frequency alternating current to hit the atoms inside the semiconductor chip back and forth from three directions in turn, so that the atoms inside the semiconductor chip are arranged regularly from three directions to positions with lower energy in turn, thereby repairing the defects inside the semiconductor chip in the three current directions.

[0008] Preferably, it comprises the following steps: S1. Pass high-frequency alternating current into the semiconductor chip, causing electrons to collide with atoms back and forth along the direction of the current, thereby causing the atoms to be regularly arranged in positions with lower energy along the collision direction; S2. A high-frequency alternating current is introduced into the semiconductor chip. The current direction of the high-frequency alternating current introduced this time is perpendicular to the current direction of the high-frequency alternating current introduced in S1, so that the electrons collide with the atoms back and forth along the direction of the current, thereby causing the atoms to be regularly arranged in positions with lower energy along the collision direction; S3. High-frequency alternating current is passed into the semiconductor chip. The current direction of the high-frequency alternating current passed this time is perpendicular to the current direction of the high-frequency alternating current passed in S1 and S2, so that electrons collide with atoms back and forth along the direction of the current, and then the atoms are arranged regularly along the collision direction to positions with lower energy.

[0009] Preferably, the high-frequency alternating current is a combination of one or more of a sine wave signal, a pulse signal or a triangular wave signal.

[0010] Preferably, the step S1 further includes: S0. Cleaning semiconductor chips.

[0011] Preferably, the step S3 further includes: S4. Perform surface treatment on the semiconductor chip to remove the surface oxide layer that appears during the defect repair process.

[0012] Compared with the prior art, the technical solution provided by the present invention has the following beneficial effects: The method for repairing large-scale consistent defects of semiconductor chips using electronic wind power disclosed by the present invention connects high-frequency alternating current to the semiconductor chip three times, and the current directions of the high-frequency alternating current connected three times are perpendicular to each other. The electrons of the high-frequency alternating current hit the atoms inside the semiconductor chip back and forth from three directions in turn, so that the atoms inside the semiconductor chip are arranged regularly from three directions to positions with lower energy in turn, thereby repairing the defects inside the semiconductor chip in the three current directions. Compared with heat treatment repair, it does not require a long-term heating, temperature increase, and temperature reduction process, and is time-consuming and more efficient. The electronic wind power is targeted at the defects inside the semiconductor chip, making the repair effect more effective, and can ensure that the rest of the parts are not affected while completing the repair of local defects. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 A schematic diagram of a semiconductor chip with internal defects; Figure 2 This is a schematic diagram of the first time high-frequency alternating current is introduced into a semiconductor chip; Figure 3 It is a schematic diagram of the second time high-frequency alternating current is passed into the semiconductor chip; Figure 4 This is a schematic diagram of the third time high-frequency alternating current is introduced into the semiconductor chip; Figure 5 These are the effects before and after the defective position of a semiconductor chip is repaired. DETAILED DESCRIPTION

[0014] In order to further understand the content of the present invention, the present invention is described in detail in conjunction with examples. The following examples are used to illustrate the present invention but are not used to limit the scope of the present invention.

[0015] Embodiment: The method for repairing semiconductor chips with large-scale consistent defects using electronic wind power according to the present invention is used to repair various semiconductor materials, including common semiconductor materials such as silicon, germanium, silicon carbide, silicon nitride, gallium arsenide, semiconductor diamond, and various semiconductor materials or metal electrode layers grown or epitaxial thereon. Figure 1 Taking the semiconductor chip shown in FIG. 1 as an example, the repair method of the present invention is described in detail.

[0016] See attached Figure 1As shown, the semiconductor chip involved in the present invention includes a top layer, an intermediate functional layer and a bottom layer, wherein the top layer includes metal electrode layer materials such as Au, Ag, Cu, Al or semiconductor materials such as diamond; the intermediate functional layer mainly includes semiconductor materials such as Si, GaAs, GaN, SiC, MoS or metal materials such as Al and Cu; the bottom layer includes a substrate or epitaxial substrate material, including semiconductor materials such as Si, GaAs, GaN, SiC, etc. The defect may be in any one or more layers of the top layer, the intermediate functional layer and the bottom layer of the semiconductor chip.

[0017] The present invention relates to a method for repairing semiconductor chip defects on a large scale using electronic wind power, which comprises the following steps: connecting high-frequency alternating current to the semiconductor chip three times, the current directions of the three connected high-frequency alternating currents being perpendicular to each other, using the electrons of the high-frequency alternating current to hit the atoms inside the semiconductor chip back and forth from three directions in sequence, so that the atoms inside the semiconductor chip are arranged regularly from three directions to positions with lower energy in sequence, thereby repairing the defects inside the semiconductor chip in the three current directions. It comprises the following steps: S0. Clean the semiconductor chip, remove dust and other external impurities attached to the surface of the semiconductor chip that may affect the electronic wind power repair process by cleaning, so as to keep the semiconductor chip clean.

[0018] S1. Figure 2 As shown, a high-frequency alternating current is introduced into the semiconductor chip. In this embodiment, the current direction of the high-frequency alternating current introduced this time is the Z-axis direction, so that the electrons collide with the atoms back and forth along the direction of the current, thereby causing the atoms to be regularly arranged toward positions with lower energy along the collision direction; S2. Figure 3 As shown, a high-frequency alternating current is introduced into the semiconductor chip, and the current direction of the high-frequency alternating current introduced this time is perpendicular to the current direction of the high-frequency alternating current introduced in S1. In this embodiment, the current direction of the high-frequency alternating current introduced this time is the X-axis direction, so that the electrons collide with the atoms back and forth along the direction of the current, thereby causing the atoms to be regularly arranged in positions with lower energy along the collision direction; S3. Figure 4 As shown, high-frequency alternating current is passed into the semiconductor chip, and the current direction of the high-frequency alternating current passed this time is perpendicular to the current direction of the high-frequency alternating current passed in S1 and S2. In this embodiment, the current direction of the high-frequency alternating current passed this time is the Y-axis direction, so that electrons collide with atoms back and forth along the direction of the current, thereby causing the atoms to be regularly arranged toward positions with lower energy along the collision direction.

[0019] It should be noted that the current direction of the high-frequency alternating current is the X-axis direction, the Y-axis direction and the Z-axis direction, and the order can be adjusted at will. The high-frequency alternating current adopts a combination of one or more of a sine wave signal, a pulse signal or a triangular wave signal.

[0020] S4. Perform surface treatment on the semiconductor chip to remove the surface oxide layer that appears during the defect repair process. The specific method of removing the surface oxide layer belongs to the conventional technical means in this field.

[0021] The repair principle of the present invention is: high-frequency alternating current (such as power signals such as sinusoidal signals, pulse signals or triangular wave signals) is passed through the semiconductor chip. Since the defects inside the semiconductor chip are irregularly arranged, the defects have a more significant blocking effect on electrons. Therefore, the high-frequency moving electrons will continuously collide with the atoms in the semiconductor chip, causing the atoms to vibrate under the high-frequency electron wind force, thereby allowing the atoms to obtain a certain amount of kinetic energy and tend to arrange in a way with the lowest overall energy, that is, the atoms are gradually arranged regularly.

[0022] See attached Figure 5 As shown, Figure 5 The left side is the atomic distribution map of the defect position before repair, and the right side is the atomic distribution map of the defect position after repair. By comparing the atomic distribution maps before and after repair, it can be seen that the atoms at the defect position after repair are arranged regularly, which indicates that the defect has been repaired.

[0023] The present invention is described in detail above in combination with the embodiments, but the contents described are only preferred embodiments of the present invention and cannot be considered to limit the scope of implementation of the present invention. All equivalent changes and improvements made according to the scope of application of the present invention should still fall within the scope of the patent coverage of the present invention.

Claims

1. A method for repairing large-scale consistent defects of semiconductor chips using electronic wind power, characterized in that: It includes the following steps: High-frequency alternating current is connected to the semiconductor chip three times, and the current directions of the three high-frequency alternating currents are perpendicular to each other. The electrons of the high-frequency alternating current hit the atoms inside the semiconductor chip back and forth from three directions in turn, so that the atoms inside the semiconductor chip are arranged regularly from three directions to positions with lower energy, thereby repairing the defects inside the semiconductor chip in the three current directions.

2. The method for repairing semiconductor chip defects on a large scale using electronic wind power according to claim 1, characterized in that: It includes the following steps: S1. Pass high-frequency alternating current into the semiconductor chip, causing electrons to collide with atoms back and forth along the direction of the current, thereby causing the atoms to be regularly arranged in positions with lower energy along the collision direction; S2. A high-frequency alternating current is introduced into the semiconductor chip. The current direction of the high-frequency alternating current introduced this time is perpendicular to the current direction of the high-frequency alternating current introduced in S1, so that the electrons collide with the atoms back and forth along the direction of the current, thereby causing the atoms to be regularly arranged in positions with lower energy along the collision direction; S3. High-frequency alternating current is passed into the semiconductor chip. The current direction of the high-frequency alternating current passed this time is perpendicular to the current direction of the high-frequency alternating current passed in S1 and S2, so that electrons collide with atoms back and forth along the direction of the current, and then the atoms are arranged regularly along the collision direction to positions with lower energy.

3. The method for repairing semiconductor chip defects on a large scale using electronic wind power according to claim 1 or 2, characterized in that: The high-frequency alternating current adopts a combination of one or more of a sine wave signal, a pulse signal or a triangular wave signal.

4. The method for repairing semiconductor chip defects on a large scale using electronic wind power according to claim 1, characterized in that: The S1 shown also includes: S0. Cleaning semiconductor chips.

5. The method for repairing semiconductor chip defects on a large scale using electronic wind power according to claim 1, characterized in that: The S3 shown also includes: S4. Perform surface treatment on the semiconductor chip to remove the surface oxide layer that appears during the defect repair process.

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