Substrate processing apparatus and method, method of manufacturing semiconductor device, and recording medium

Abstract

The invention provides a technology capable of suppressing generation of particles when a substrate is conveyed by using a substrate conveying device. A substrate processing apparatus is provided with: a substrate transfer device which has a placement part on which a substrate is placed, and a gripping part capable of gripping the substrate placed on the placement part between a first site and a second site, and which is capable of transferring the substrate placed on the placement part; and a control unit which is configured so as to be capable of performing control so that the substrate placed on the placement unit is moved by pushing the substrate placed on the placement unit in the direction of the first site with a first external force by means of the second site, the substrate placed on the placing portion is gripped by a second external force using the first portion and the second portion.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and method, a method for manufacturing a semiconductor device, a conveying apparatus, and a recording medium. Background Art

[0002] As one step of a process for manufacturing a semiconductor device, a plurality of processes may be performed on a substrate in a plurality of processing furnaces (for example, Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2005-93868 Summary of the invention

[0006] In the above-mentioned apparatus, particles may be generated when a substrate is transported to a processing furnace using a substrate transport device.

[0007] The present disclosure provides a technology capable of suppressing the generation of particles when a substrate is transported using a substrate transport device.

[0008] According to one embodiment of the present disclosure, a technology is provided, which comprises:

[0009] A substrate transport device including a placement portion for placing a substrate, and a gripping portion capable of gripping the substrate placed on the placement portion between a first portion and a second portion, and capable of transporting the substrate placed on the placement portion; and

[0010] The control unit is configured to be able to control so that the substrate placed on the placing unit is moved by pushing the substrate placed on the placing unit in the direction of the first unit using the second unit with a first external force, and the substrate placed on the placing unit is held by using the first unit and the second unit with a second external force.

[0011] Effects of the Invention

[0012] According to the present disclosure, it is possible to suppress generation of particles when a substrate is transported using a substrate transport device. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is an explanatory diagram showing a schematic configuration example of a substrate processing apparatus according to an embodiment of the present disclosure.

[0014] Figure 2 This is a perspective view showing an example of a substrate transfer device according to an embodiment of the present disclosure.

[0015] Figure 3 (A) is a top view of the substrate mounting plate. Figure 3(B) is a side view of the substrate mounting plate.

[0016] Figure 4 This is a block diagram for explaining the configuration of a control unit of a substrate processing apparatus according to an embodiment of the present disclosure.

[0017] Figure 5 (A)~ Figure 5 (C) is a diagram for explaining the operation in the substrate mounting plate according to one embodiment of the present disclosure.

[0018] Description of Reference Numerals

[0019] 10Substrate processing device

[0020] 112Substrate transfer device

[0021] 200 wafers (substrates)

[0022] 306 loading unit

[0023] 308 front end clamping portion (first portion)

[0024] 310 mobile clamping part (second part)

[0025] 500 controller (control unit) DETAILED DESCRIPTION

[0026] (1) Configuration of substrate processing apparatus

[0027] The following mainly refers to Figure 1 to Figure 5 An embodiment of the present disclosure is described. In addition, the drawings used in the following description are all schematic, and the relationship between the dimensions of the elements and the ratio of the elements shown in the drawings are not necessarily consistent with reality. In addition, the relationship between the dimensions of the elements and the ratio of the elements are not necessarily consistent between multiple drawings.

[0028] Figure 1 The figure is a cross-sectional view of the upper surface of a substrate processing device 10 for implementing a method for manufacturing a semiconductor device. The substrate processing device 10 is a cluster type device, and a transport device is divided into a vacuum side and an atmosphere side. In addition, in the substrate processing device 10, a FOUP (Front Opening Unified Pod: hereinafter referred to as a box) 100 is used as a carrier for transporting a wafer 200 as a substrate.

[0029] (Vacuum side configuration)

[0030] like Figure 1As shown, the substrate processing apparatus 10 includes a first transfer chamber 103 capable of withstanding a pressure lower than atmospheric pressure (negative pressure) such as a vacuum state. A housing 101 of the first transfer chamber 103 is, for example, pentagonal in plan view, and is formed in a box shape with upper and lower ends closed.

[0031] A first substrate transfer device 112 for transferring the wafer 200 is provided in the first transfer chamber 103 .

[0032] Among the five side walls of the frame 101, the front side ( Figure 1 The side walls of the wafer 200 (lower side in the middle) are connected to the load lock chamber 122 and the load lock chamber 123 via gate valves 126 and 127. The load lock chambers 122 and 123 are configured to have the functions of loading the wafer 200, putting the wafer 200 on standby, and unloading the wafer 200, and are each configured using a structure capable of withstanding negative pressure.

[0033] The first transfer chamber 103 is located on the rear side (back side, Figure 1 Processing containers 202a to 202d for performing desired processing on the wafer 200 are adjacently connected to four side walls (on the upper side) via gate valves 70a to 70d.

[0034] (Composition of the atmosphere side)

[0035] A second transfer chamber 121 capable of transferring wafers 200 under atmospheric pressure is connected to the front side of the load lock chambers 122 and 123 via gate valves 128 and 129. The second transfer chamber 121 is provided with a second substrate transfer device 124 for transferring wafers 200.

[0036] A notch alignment device 106 is provided on the left side of the second transfer chamber 121. In addition, the notch alignment device 106 may also be an orientation plane alignment device.

[0037] A substrate carrying-in outlet 134 and a cassette opener 108 are provided on the front side of the frame 125 of the second transfer chamber 121 for carrying the wafer 200 in and out of the second transfer chamber 121. A loading port (IO stage) 105 is provided on the opposite side of the cassette opener 108 across the substrate carrying-in outlet 134 (i.e., the outside of the frame 125). The cassette opener 108 includes a closer that opens and closes the lid 100a of the cassette 100 and can close the substrate carrying-in outlet 134. By opening and closing the lid 100a of the cassette 100 placed on the loading port 105, the wafer 200 can be carried in and out of the cassette 100. In addition, the cassette 100 is supplied and discharged with respect to the loading port 105 by an in-process transfer device (OHT, etc.) not shown in the figure.

[0038] (Constitution of the treatment container)

[0039] The processing containers 202a to 202d include processing chambers 201a to 201d, respectively. The processing chambers 201a to 201d are connected to each other in a reduced pressure state via gate valves 70a to 70d and the first transfer chamber 103. In the processing chambers 201a to 201d, a predetermined process is performed on the wafers 200 that have been loaded.

[0040] As the processing containers 202a to 202d, for example, a single-type processing container and a batch-type processing container are provided in a mixed manner. The processing chamber provided in the single-type processing container can perform single-wafer processing on one or more wafers 200 at a time. The processing chamber provided in the batch-type processing container can perform batch processing on multiple wafers 200 at a time.

[0041] In each processing container, by controlling the gas supply system and the gas exhaust system connected to the processing container, gas is supplied to the wafer 200 in the processing container to perform a predetermined process. For example, in a state where the wafer 200 is in a single-type processing container, monosilane (SiH4) gas as a silicon-containing gas and oxygen (O2) gas as an oxygen-containing gas are supplied to the processing container to form a silicon oxide film on the wafer 200. In addition, in another single-type device, SiH4 gas and nitrogen (N2) gas as a nitrogen-containing gas are supplied to form a silicon nitride film on the wafer 200. Moreover, in a state where the wafer 200 is in a batch-type processing container, an annealing process of heating the wafer 200 is performed while supplying an inactive gas to the processing container. In this way, the processing of the wafer 200 can also be different for each processing container. Here, as an example, a film forming process or an annealing process is described, but it is not limited to this. A desired substrate process such as a modification process or a cooling process can also be performed in each processing container.

[0042] (Composition of load lock chamber)

[0043] Next, the load lock chambers 122 and 123 will be described. The load lock chambers 122 and 123 are provided so as to be adjacent to one surface of the first transfer chamber 103, which is the vacuum side, via gate valves 126 and 127, respectively. In addition, the load lock chambers 122 and 123 are provided so as to be adjacent to one surface of the second transfer chamber 121, which is the atmosphere side, via gate valves 128 and 129, respectively. The load lock chambers 122 and 123 are configured so as to be connected to each other in a reduced pressure state via the gate valves 126 and 127, the first transfer chamber 103, and the processing chambers 201a to 201d. That is, the load lock chambers 122 and 123 can be connected to the first transfer chamber 103 in a reduced pressure state via the gate valves 126 and 127. In addition, the load lock chambers 122 and 123 are configured so as to be connected to each other in an atmospheric pressure state via the gate valves 128 and 129, and the second transfer chamber 121.

[0044] The load lock chamber 122 stores unprocessed wafers 200 before being transferred to any one of the processing chambers 201a to 201d. In addition, the load lock chamber 123 stores processed wafers 200 that have been processed in at least one of the processing chambers 201a to 201d. That is, the load lock chambers 122 and 123 are storage chambers for temporarily storing unprocessed or processed wafers 200, respectively.

[0045] Next, use Figure 2 The first substrate transport device 112 is described in detail. The first substrate transport device 112 is configured to be able to transport the wafers 200 placed on the placement portion 306 described later to the processing chambers 201a to 201d respectively. The first substrate transport device 112 is configured to be raised and lowered by the elevator 301. The first substrate transport device 112 is configured to be able to transport two wafers 200 at the same time using a SCARA type robot (selective compliance assembly robot).

[0046] The first substrate transfer device 112 includes an arm 302 located at the upper side and an arm 303 located at the lower side. End effectors 304 and 305 serving as substrate mounting plates are respectively mounted at the front ends of the arm 302 and the arm 303. The end effectors 304 and 305 are each configured to scoop up and support the wafer 200 from below.

[0047] The end effector 304 and the end effector 305 are formed in substantially the same shape. Figure 3 (A) and Figure 3 The end effector 304 shown in (B) is used as an example for description.

[0048] The end effector 304 includes: a placing portion 306 for placing the wafer 200; a supporting portion 307 for supporting the placing portion 306; a front end clamping portion 308 as a first portion provided on the upper surface of the front end of the placing portion 306; and a movable clamping portion 310 as a second portion provided on the upper surface of the placing portion 306 on the side opposite to the front end clamping portion 308. The movable clamping portion 310 can also be referred to as a rear end clamping portion.

[0049] The mounting portion 306 is configured as a U-shaped plate (plate body). The mounting portion 306 is not limited to the U-shaped plate, but may be a forked plate, a rectangular plate, etc. The mounting portion 306 is supported by the support portion 307 on the arm portion 302 .

[0050] The front end clamping part 308 is provided in a columnar protruding manner on the upper surface of both front ends of the mounting part 306. The inner side surface 308a of the front end clamping part 308 is formed into an arc shape to match the shape of the wafer 200. The diameter of the inner side surface 308a of the front end clamping part 308 is set to be slightly larger than the diameter of the wafer 200. In addition, the upper surface 308b of the front end clamping part 308 is configured to be higher than the surface of the wafer 200 mounted on the mounting part 306.

[0051] The movable clamping part 310 is protrudingly provided on the upper surface of the connection part of the mounting part 306 connected to the support part 307. The movable clamping part 310 is in the shape of a rectangular parallelepiped, and the inner side surface 310a, which is the side surface on the side opposite to the front end clamping part 308, matches the shape of the wafer 200 and is formed in an arc shape. The diameter of the inner side surface 310a of the movable clamping part 310 is set to be slightly larger than the diameter of the wafer 200. In addition, the upper surface 310b of the movable clamping part 310 is configured to be higher than the surface of the wafer 200 mounted on the mounting part 306.

[0052] Air cylinders 311 and 312 are connected to the side surface of the movable clamping part 310 opposite to the inner side surface 310a, which are moving mechanisms for moving the movable clamping part 310 substantially horizontally. The air cylinders 311 and 312 have substantially the same structure.

[0053] The air cylinders 311 and 312 respectively have rods 311a and 312a whose ends are connected to the side surfaces of the movable clamping part 310. The air cylinders 311 and 312 are connected to a pressure adjustment mechanism 313.

[0054] The pressure adjustment mechanism 313 is configured to adjust the pressure of the gas supplied into the gas cylinders 311 and 312 . Thus, the movable clamping unit 310 is moved, and the wafer 200 is gripped by the movable clamping unit 310 and the front end clamping unit 308 .

[0055] Specifically, the pressure of the gas supplied to the cylinders 311 and 312 is adjusted by the pressure adjustment mechanism 313, thereby adjusting the first external force for pushing the wafer 200 placed on the placement portion 306 and the second external force for holding the wafer 200 placed on the placement portion 306. That is, by adjusting the pressure of the gas supplied to the cylinders 311 and 312, the rods 311a and 312a are pushed out from the cylinders 311 and 312, the movable clamping portion 310 is moved toward the front end clamping portion 308 by the first external force, and the wafer 200 is held by the movable clamping portion 310 and the front end clamping portion 308 by the second external force.

[0056] In addition, by adjusting the pressure of the gas supplied to the cylinders 311 and 312 using the pressure adjustment mechanism 313, the rods 311a and 312a are pulled into the cylinders 311 and 312, so that the movable clamping part 310 moves in the direction opposite to the direction of the front end clamping part 308.

[0057] The front end clamping portion 308 and the movable clamping portion 310 are used as a gripping portion capable of gripping the wafer 200 mounted on the mounting portion 306 between the front end clamping portion 308 and the movable clamping portion 310 .

[0058] (2) Controller configuration

[0059] Next, the configuration of the controller 500 as a control unit (control unit) will be described.

[0060] The controller 500 as a control unit (control unit) controls the above-mentioned respective components so as to perform a substrate processing step described later.

[0061] like Figure 4 As shown, the controller 500 is configured as a computer including a CPU (Central Processing Unit: central memory) 500a, a RAM (Random Access Memory: random memory) 500b, a storage device 500c, and an I / O port 500d. The RAM 500b, the storage device 500c, and the I / O port 500d are configured to be able to exchange data with the CPU 500a via an internal bus 500e. The controller 500 is connected to an input / output device 501 such as a touch panel or a display device 472 such as a display.

[0062] The storage device 500c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), etc. A control program for controlling the actions of the substrate processing device, or a process recipe that records the steps or conditions of the substrate processing described later, etc., is readable and stored in the storage device 500c. In addition, the process recipe is combined in a manner so that the controller 500 can obtain a specified result by executing each step in the substrate processing process described later, and functions as a program. Hereinafter, the process recipe or control program, etc. are also collectively referred to as a program. In addition, when the term "program" is used in this specification, there are cases where only the process recipe alone is included, only the control program alone is included, or both are included. In addition, the RAM 500b is configured as a memory area (workpiece area) for temporarily storing programs or data read by the CPU 500a.

[0063] The I / O port 500 d is connected to the gate valves 70 a to 70 d , 126 to 129 , the first substrate transfer device 112 , the second substrate transfer device 124 , the pressure adjustment mechanism 313 , and the like.

[0064] The CPU 500a is configured to read and execute the control program from the storage device 500c, and read the process recipe from the storage device 500c according to the input of the operation command from the input / output device 501. Then, the CPU 500a is configured to control the opening and closing actions of the gate valves 70a to 70d and 126 to 129, the conveyance / substrate transfer action of the wafer 200 by the first substrate conveyance device 112 or the second substrate conveyance device 124, the pressure regulation action of the gas in the cylinder by the pressure regulation mechanism 313, etc. in a manner according to the content of the read process recipe.

[0065] In addition, the controller 500 is not limited to being configured as a dedicated computer, but can also be configured as a general-purpose computer. For example, an external storage device (such as a magnetic tape, a disk such as a floppy disk or a hard disk, an optical disk such as a CD or a DVD, an optical magnetic disk such as an MO, a semiconductor memory such as a USB memory (USB Flash Drive) or a memory card) 502 storing the above-mentioned program is prepared, and the controller 500 of this embodiment can be configured by using the external storage device 502 to install the program to a general-purpose computer. In addition, the means for supplying the program to the computer is not limited to the case of supplying via the external storage device 502. For example, the program can also be supplied without passing through the external storage device 502 using communication means such as the Internet or a dedicated line. In addition, the storage device 500c or the external storage device 502 is configured as a recording medium that can be read by a computer. Hereinafter, these are also collectively referred to as recording media. In addition, when the term recording medium is used in this specification, there is a case where only the storage device 500c is included, a case where only the external storage device 502 is included, or a case where both are included.

[0066] (3) Substrate processing steps

[0067] Next, as one process of semiconductor manufacturing process, the process from starting to ending the process in the processing container 202a using the substrate processing apparatus 10 having the above configuration is described. In the following description, the operations of the various components constituting the substrate processing apparatus 10 are controlled by the controller 500.

[0068] First, the unprocessed wafer 200 stored in the load lock chamber 122 is carried into the processing chamber 201 a of the processing container 202 a by the first substrate transfer device 112 .

[0069] Here, use Figure 5 (A)~ Figure 5 (C) describes in detail the operation of the first substrate transport device 112 when transporting the substrate.

[0070] First, if Figure 5 As shown in (A), when the wafer 200 is placed on the placement portion 306 of the first substrate transport device 112, the controller 500 uses the pressure adjustment mechanism 313 to adjust the pressure of the gas supplied to the cylinders 311 and 312 to the first pressure. The rods 311a and 312a are pushed into the cylinders 311 and 312, so that the movable clamping portion 310 moves toward the front clamping portion 308. As a result, Figure 5 As shown in FIG. 2 (B), the inner side surface 310 a of the movable clamping part 310 is in contact with the end of the wafer 200 .

[0071] That is, by adjusting the pressure of the gas supplied to the cylinders 311 and 312 to a first pressure using the pressure adjustment mechanism 313 , the wafer 200 placed on the placement portion 306 is pushed toward the front end clamping portion 308 by the movable clamping portion 310 with a first external force, thereby moving approximately horizontally.

[0072] Then, after a predetermined time has passed since the pressure of the gas supplied to the cylinders 311 and 312 was adjusted to the first pressure, the controller 500 uses the pressure adjustment mechanism 313 to adjust the pressure of the gas supplied to the cylinders 311 and 312 to a second pressure that is smaller than the first pressure. The rods 311a and 312a are further pushed out of the cylinders 311 and 312, and the wafer 200 is gripped by the movable clamping unit 310 and the front clamping unit 308. Figure 5 As shown in FIG. 5(C) , the inner side surface 308 a of the front end clamping portion 308 contacts the end of the wafer 200 , and the wafer 200 is held by the front end clamping portion 308 and the movable clamping portion 310 .

[0073] That is, by adjusting the pressure of the gas supplied to the cylinders 311 and 312 to a second pressure smaller than the first pressure by the pressure adjustment mechanism 313, the wafer 200 placed on the placement portion 306 is held by the inner side surface 308a of the front end clamping portion 308 and the inner side surface 310a of the movable clamping portion 310 with a second external force smaller than the first external force. That is, the first external force is greater than the second external force.

[0074] As described above, the controller 500 is configured to be able to use the pressure adjustment mechanism 313 to adjust the first external force and the second external force to hold the wafer 200. Thus, by using multiple stages (two stages in the present embodiment) to hold the wafer 200, specifically, by making the magnitude of the external force when pushing the wafer 200 on the mounting portion 306 different from the magnitude of the external force when holding the wafer 200, it is possible to suppress debris or film peeling at the edge, and suppress the generation of particles, compared with the case of holding the wafer 200 in one stage. In addition, by making the second external force when holding the wafer 200 smaller than the first external force when pushing the wafer 200 on the mounting portion 306, it is possible to suppress debris of the wafer 200 or film peeling at the edge of the wafer 200 when holding the wafer 200, and suppress the generation of particles.

[0075] In addition, when the arms 302 and 303 are in motion, the controller 500 adjusts the pressure of the gas supplied to the cylinders 311 and 312 to a third pressure greater than the first pressure by the pressure adjustment mechanism 313 in the process of moving the wafer 200 by the arms 302 and 303. The rods 311a and 312a are further pushed out of the cylinders 311 and 312, and the wafer 200 is held by the mobile clamping part 310 and the front end clamping part 308 with a third external force greater than the first external force and greater than the second external force.

[0076] That is, by using the pressure regulating mechanism 313 to adjust the pressure of the gas supplied to the cylinders 311 and 312 to a third pressure that is higher than the first pressure, the inner surface 308a of the front end clamping portion 308 and the inner surface 310a of the movable clamping portion 310 are used to hold the wafer 200 loaded on the loading portion 306 with a third external force that is greater than the second external force.

[0077] As described above, when the arms 302 and 303 are stopped and the placement unit 306 is stopped (also referred to as when the end effectors 304 and 305 are stopped), the controller 500 uses the front end clamping unit 308 and the movable clamping unit 310 to hold the wafer 200 with the second external force as described above. On the other hand, the controller 500 controls so that when the arms 302 and 303 are in motion and the placement unit 306 is moved (also referred to as when the end effectors 304 and 305 are moved), the front end clamping unit 308 and the movable clamping unit 310 hold the wafer 200 with a third external force that is greater than the first external force and greater than the second external force. In this way, by increasing the force of holding the wafer 200 when the arms 302 and 303 are moving compared to the force of holding the wafer 200 when the arms 302 and 303 are stopped, the wafer 200 can be prevented from falling when the arms 302 and 303 are moving, and the film peeling at the edge can be prevented from being chipped or peeled off, thereby preventing the generation of particles.

[0078] As described above, after the wafer 200 is loaded into the processing chamber 201a, the first substrate transport device 112 is withdrawn to the outside of the processing container 202a, and the gate valve 70a is closed to seal the processing container 202a. Then, a predetermined process is performed on the wafer 200 in the processing chamber 201a. Here, for example, SiH4 gas as a silicon-containing gas and O2 gas as an oxygen-containing gas are supplied to the processing container 202a while the wafer 200 is in the processing container 202a, so that a silicon oxide film is formed on the wafer 200. In addition, the operation of each part of the first substrate transport device described later is the same as this step, and therefore, a detailed description thereof is omitted below.

[0079] Next, the gate valve 70a is opened to allow the processing chamber 201a to communicate with the first transfer chamber 103. Then, the processed wafer 200 is transferred out of the processing chamber 201a by the first substrate transfer device 112.

[0080] Then, the processed wafer 200 is carried into the load lock chamber 123 by the first substrate transfer device 112. Then, after closing the gate valve 70d, the gate valve 129 is opened to connect the load lock chamber 123 with the second transfer chamber 121. Then, the processed wafer 200 is carried out of the load lock chamber 123 by the second substrate transfer device 124.

[0081] [Other embodiments]

[0082] As mentioned above, although one embodiment of the present disclosure was specifically described, the present disclosure is not limited to the above embodiment, and various changes can be made within the scope not departing from the gist of the present disclosure.

[0083] For example, in the above-mentioned embodiment, the second external force when holding the wafer 200 is set to be smaller than the first external force when pushing the wafer 200 on the mounting portion 306, but the present disclosure is not limited thereto. That is, the second external force when holding the wafer 200 may be increased compared to the first external force when pushing the wafer 200 on the mounting portion 306. Thus, it is possible to suppress the occurrence of debris or film peeling at the edge when pushing the wafer 200 on the mounting portion 306, and to suppress the generation of particles.

[0084] In addition, in the above embodiment, the case where the movable clamping part 310 is moved using two cylinders 311 and 312 is described, but the present disclosure is not limited thereto. That is, the number of cylinders may be one or more than three. In this modified example, the same effect as in the above embodiment is obtained.

[0085] In addition, in the above-mentioned embodiment, the case where the cylinder 311 and the cylinder 312 are of the same structure is described, but the present disclosure is not limited to this. That is, the cylinder 311 and the cylinder 312 may be respectively connected with a first pressure regulating mechanism for moving the movable clamping part 310 by regulating the gas to a first pressure, and a second pressure regulating mechanism for holding the front end clamping part 308 and the movable clamping part 310 by regulating the gas to a second pressure. In this case, the controller 500 is configured to be able to regulate the first external force and the second external force using the first pressure regulating mechanism and the second pressure regulating mechanism. In this modified example, the same effect as the above-mentioned embodiment is obtained.

[0086] In addition, in the above embodiment, the operation of the first substrate transport device 112 during substrate transport is performed as time passes, but the present disclosure is not limited thereto. That is, the operation may be performed according to the movement amount of the wafer 200. In this modified example, the same effect as in the above embodiment is obtained.

[0087] Furthermore, in the above-described embodiment, a case where the wafer 200 is transferred to the processing container 202 a for processing is described, but the present disclosure is not limited thereto.

[0088] For example, an example is described in which different processes can be performed in each of the processing containers 202a~202d, and the first substrate transfer device 112 is used to transfer the wafer 200 when transferring the wafer 200 between the processing containers. However, the present invention is not limited to this, and the first substrate transfer device 112 may also be used to transfer the wafer between the processing containers.

[0089] In this modification, the same effects as those of the above-described embodiment can be obtained.

[0090] In addition, the process used in each treatment is preferably prepared separately according to the treatment content, and is stored in the storage device 500c in advance via the electrical communication line or the external storage device 502. Then, when starting each treatment, the CPU 500a preferably selects a suitable process from the multiple processes stored in the storage device 500c according to the treatment content. Thus, a substrate processing device can be used to form films of various film types, component ratios, film qualities, and film thicknesses with good reproducibility. In addition, the burden on the operator can be reduced, operational errors can be avoided, and each treatment can be started quickly.

[0091] In addition, the above process is not limited to the case of newly creating, and can also be prepared by, for example, changing an existing process already installed in a substrate processing device. In the case of changing a process, the changed process can also be installed in the substrate processing device via an electrical communication line or a recording medium recording the process. In addition, the input / output device 501 of the existing substrate processing device can also be operated to directly change the existing process already installed in the substrate processing device.

[0092] In addition, in the above-mentioned embodiment, it is described that the processing chambers 201a to 201d are respectively provided with a single processing chamber and a batch processing chamber, but the present disclosure is not limited to this. That is, the single processing chamber and the batch processing chamber may not be provided in a mixed manner, and only the single processing chamber or only the batch processing chamber may be used to form the processing chamber. In addition, as the processing containers 202a to 202d, a substrate processing device having a hot wall type processing furnace, a substrate processing device having a cold wall type processing furnace, or other substrate processing devices can be used.

[0093] Also when these substrate processing apparatuses are used, each process can be performed using the same process steps and process conditions as those in the above-described embodiment, and the same effects as those in the above-described embodiment can be obtained.

[0094] In addition, the above-mentioned embodiment or modification example can be used in combination as appropriate. In this case, the processing steps and processing conditions can be made the same as the processing steps and processing conditions of the above-mentioned embodiment or modification example, for example.

Claims

1. A substrate processing method, characterized in that: A substrate conveying device is provided with a loading portion for loading a substrate, and a holding portion capable of holding a substrate loaded on the loading portion between a first portion and a second portion. The substrate loaded on the loading portion is moved by pushing the substrate loaded on the loading portion toward the first portion using a first external force using the second portion, and the substrate loaded on the loading portion is held using a second external force or a third external force using the first portion and the second portion.

2. The substrate processing method according to claim 1, characterized in that: The first external force is greater than the second external force.

3. The substrate processing method according to claim 1, characterized in that: The third external force is greater than the first external force.

4. The substrate processing method according to claim 1, characterized in that: The third external force is greater than the second external force.

5. The substrate processing method according to claim 1, characterized in that: The first portion is a front end clamping portion, and the second portion is a movable clamping portion.

6. The substrate processing method according to claim 1, characterized in that: The first portion is protrudingly disposed at the front end of the mounting portion, The second portion is provided on the mounting portion at a side opposite to the first portion.

7. The substrate processing method according to claim 5, characterized in that: The movable clamping part is connected with a pressure regulating mechanism.

8. The substrate processing method according to claim 5, characterized in that: The movable clamping part is a cylinder, and a pressure regulating mechanism is connected to the movable clamping part. The pressure in the cylinder is adjusted by the pressure adjustment mechanism to move the movable clamping part.

9. The substrate processing method according to claim 8, characterized in that: The movable clamping part is provided with a plurality of The pressure regulating mechanism is connected to each of the movable clamping parts.

10. The substrate processing method according to claim 1, characterized in that: The first portion and the second portion hold the substrate with the second external force while the placement portion is stopped, and the first portion and the second portion hold the substrate with the third external force greater than the first external force while the placement portion is moving.

11. The substrate processing method according to claim 1, characterized in that: The first portion and the second portion are used to hold the substrate with the second external force while the arm including the placement portion is stopped, and the first portion and the second portion are used to hold the substrate with the third external force greater than the first external force while the arm is moving.

12. The substrate processing method according to claim 1, characterized in that: At least one of the first external force, the second external force, and the third external force is adjusted by a pressure adjustment mechanism that moves the second portion by adjusting the pressure of the gas.

13. The substrate processing method according to claim 1, characterized in that: The first external force and the second external force are adjusted by a first pressure adjustment mechanism and a second pressure adjustment mechanism. The first pressure adjustment mechanism moves the second part by adjusting the gas to a first pressure. The second pressure adjustment mechanism holds the substrate by the first part and the second part by adjusting the gas to a second pressure.

14. The substrate processing method according to claim 1, characterized in that: The method includes processing the substrate in a processing chamber.

15. The substrate processing method according to claim 14, characterized in that: When a substrate is loaded into or unloaded from the processing chamber, The substrate is held by the third external force.

16. A method for manufacturing a semiconductor device, characterized in that: The process includes the following steps: Using a substrate conveying device having a placement portion for placing a substrate, and a holding portion capable of holding the substrate placed on the placement portion between a first portion and a second portion, the substrate placed on the placement portion is moved by pushing the substrate placed on the placement portion toward the first portion using a first external force using the second portion, and the substrate placed on the placement portion is held using a second external force or a third external force using the first portion and the second portion; as well as The substrate is processed within a processing chamber.

17. A computer-readable recording medium having a program recorded thereon, wherein the recording medium is characterized in that: The program causes the substrate processing device to execute the following steps through a computer: A substrate conveying device is provided with a loading portion for loading a substrate, and a holding portion capable of holding a substrate loaded on the loading portion between a first portion and a second portion. The substrate loaded on the loading portion is moved by pushing the substrate loaded on the loading portion toward the first portion using a first external force using the second portion, and the substrate loaded on the loading portion is held using a second external force or a third external force using the first portion and the second portion.

18. A substrate processing device, characterized in that: have: A substrate transport device including a placement portion for placing a substrate, and a gripping portion capable of gripping the substrate placed on the placement portion between a first portion and a second portion; and A control unit is capable of controlling so that the substrate placed on the placing unit is moved by pushing the substrate placed on the placing unit toward the first unit by using the second unit with a first external force, and holding the substrate placed on the placing unit by using the first unit and the second unit with a second external force or a third external force.

19. A conveying device, characterized in that: A substrate placement portion is provided for placing the substrate thereon, and a gripping portion is provided for gripping the substrate placed on the placement portion between a first portion and a second portion. The holding portion is controlled to move the substrate placed on the placing portion by pushing the substrate placed on the placing portion in the direction of the first portion using the second portion with a first external force, and to hold the substrate placed on the placing portion using the first portion and the second portion with a second external force or a third external force.

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