Chip heat dissipation device and chip packaging structure

Abstract

The application relates to a chip heat dissipation device. The device can solve the problem that heat accumulated in a power device cannot be dissipated, the power device works in a high-temperature environment for a long time, the reliability of the device is reduced, the power device is damaged, and the electrical property of the power device is improved. The chip heat dissipation device comprises a temperature detection unit, a first control unit, a first heat dissipation unit, a second control unit and a second heat dissipation unit. The temperature detection unit is used for detecting the temperature of a target chip. The first control unit is used for generating a first heat dissipation signal when the temperature of the target chip is located in a first preset temperature. The first heat dissipation unit is arranged on one side of the target chip to dissipate heat of the target chip. The second control unit is used for generating a first heat dissipation signal when the temperature of the target chip is located in a second preset temperature. The second heat dissipation unit is arranged on one side of the target chip to dissipate heat of the target chip.

Description

Technical Field

[0001] The present application relates to the field of chip technology, and in particular to a chip heat dissipation device and a chip packaging structure. Background Art

[0002] With the continuous development of power devices, their unit power density has increased significantly, leading to a surge in device heat generation. The heat accumulated within the device cannot be dissipated, causing the power device to operate in a high-temperature environment for a long time, reducing device reliability and causing power device failure.

[0003] At present, the packaging technology of power chips in traditional technology cannot meet the heat dissipation requirements of power chips, which in turn affects the performance of power devices and reduces the reliability and electrical properties of power devices. Summary of the Invention

[0004] The purpose of this application is to provide a chip heat dissipation device that solves the problem that the heat accumulated inside the power device cannot be dissipated, causing the power device to operate in a high-temperature environment for a long time, reducing the reliability of the device and causing the power device to fail, thereby improving the electrical performance of the power device. To achieve the purpose of this application, this application provides the following technical solutions:

[0005] In a first aspect, the present application provides a heat dissipation device for a chip, comprising:

[0006] A temperature detection unit, used to detect the temperature of the target chip;

[0007] a first control unit, electrically connected to the temperature detection unit, configured to generate a first heat dissipation signal when the temperature of the target chip is greater than a first preset temperature, wherein the first heat dissipation signal includes at least a first current;

[0008] a first heat dissipation unit, electrically connected to the first control unit, and configured to be disposed on one side of the target chip to dissipate heat from the target chip, the first heat dissipation unit comprising a thermoelectric material, wherein the temperature of the first heat dissipation unit is different when the first current is different, and the temperature of the first heat dissipation unit is lower than the temperature of the target chip;

[0009] a second control unit, electrically connected to the temperature detection unit, configured to generate a second heat dissipation signal when the temperature of the target chip is greater than a second preset temperature, the second heat dissipation signal comprising at least a second current, wherein the first preset temperature is greater than the second preset temperature;

[0010] A second heat dissipation unit is electrically connected to the second control unit and is used to be arranged on one side of the target chip to dissipate heat for the target chip. The second heat dissipation unit includes a thermoelectric material. When the second current is different, the temperature of the second heat dissipation unit is different, and the temperature of the second heat dissipation unit is lower than the temperature of the target chip.

[0011] In one embodiment, the first preset temperature ranges from 70°C to 100°C, and the second preset temperature ranges from 150°C to 200°C.

[0012] In one embodiment, the first heat dissipation unit and the second heat dissipation unit are respectively located on two opposite sides of the target chip.

[0013] In one embodiment, the first heat dissipation unit and the second heat dissipation unit are located on at least one side along a thickness direction of the target chip.

[0014] In one embodiment, the thermoelectric material of the first heat dissipation unit is different from the thermoelectric material of the second heat dissipation unit.

[0015] In one embodiment, the target chip is located on one side of the target substrate, and the first heat dissipation unit is located on a side of the target substrate away from the target chip.

[0016] In one embodiment, the heat dissipation device of the chip further includes:

[0017] a heat conduction unit, the thermal conductivity of the heat conduction unit being greater than a preset threshold, wherein, in a direction in which the target chip points toward the first heat dissipation unit, the heat conduction unit is located on at least one side surface of the first heat dissipation unit; and / or,

[0018] In a direction in which the target chip points to the second heat dissipation unit, the heat conduction unit is located on at least one side surface of the second heat dissipation unit.

[0019] In a second aspect, the present application provides a chip packaging structure, including:

[0020] chip;

[0021] A heat dissipation device for a chip as described in any one of the first aspects.

[0022] In one embodiment, the first heat dissipation unit and the second heat dissipation unit in the heat dissipation device of the chip are respectively located on two opposite sides of the chip in the thickness direction.

[0023] In one embodiment, the chip packaging structure further includes:

[0024] a metal cover plate, located on a side of the first heat dissipation unit away from the chip;

[0025] The heat sink substrate is located on a side of the second heat dissipation unit away from the chip.

[0026] The chip heat dissipation device and chip packaging structure provided in the present application detect the temperature of the target chip through a temperature detection unit. When the detection unit detects that the temperature of the target chip is greater than a first preset temperature, a first control unit generates a first heat dissipation signal. The first heat dissipation signal includes a first current, which can cause the thermoelectric material in the first heat dissipation unit to cool down under the action of the first current, so that the temperature of the first heat dissipation unit is lower than the temperature of the target chip, thereby allowing the heat of the target chip to be transferred to the first heat dissipation unit to dissipate heat from the target chip. At the same time, when the detection unit detects that the temperature of the target chip is greater than a second preset temperature, a second heat dissipation signal is generated by the second control unit to drive the second heat dissipation unit to assist in dissipating heat from the first heat dissipation unit, so that the first heat dissipation unit and the second heat dissipation unit work together to increase the heat dissipation area and heat dissipation path of the target chip, thereby accelerating the heat dissipation speed of the target chip, improving heat dissipation efficiency, further reducing heat accumulation in the target chip, keeping the operating temperature of the power device within a safe temperature range, further reducing the risk of high-temperature operation of the target chip, and enhancing the reliability and electrical performance of the power device. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the traditional technology, the following briefly introduces the drawings required for use in the embodiments or the description of the traditional technology. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0028] Figure 1 is a schematic structural diagram of a heat dissipation device for a chip provided in one embodiment;

[0029] Figure 2 This is a schematic cross-sectional structural diagram of a heat dissipation device for a chip provided in one embodiment;

[0030] Figure 3 is a schematic structural diagram of a chip packaging structure provided in an embodiment;

[0031] Figure 4 It is a schematic cross-sectional structural diagram of a chip packaging structure provided in one embodiment.

[0032] Description of Reference Numerals

[0033] 00, target chip; 100, temperature detection unit; 200, first control unit; 300, first heat dissipation unit; 400, second control unit; 500, second heat dissipation unit; 600, target substrate; 700, copper tape; 800, heat conduction unit; 900, chip; 110, heat dissipation device; 120, metal cover; 130, heat sink substrate. DETAILED DESCRIPTION

[0034] To facilitate understanding of the present application, a more comprehensive description of the present application will be provided below with reference to the accompanying drawings. The drawings illustrate preferred embodiments of the present application. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the present disclosure.

[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0036] It should be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent to, connected to, or coupled to the other element or layer, or there can be intervening elements or layers. Conversely, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types, and / or portions, these elements, components, regions, layers, doping types, and / or portions should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, doping type, or portion from another element, component, region, layer, doping type, or portion. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer, doping type or portion discussed below may be represented as a second element, component, region, layer or portion; for example, the first doping type may be referred to as the second doping type, and similarly, the second doping type may be referred to as the first doping type; the first doping type and the second doping type are different doping types, for example, the first doping type may be P-type and the second doping type may be N-type, or the first doping type may be N-type and the second doping type may be P-type.

[0037] Spatially relative terms, such as "beneath", "below", "lower", "under", "above", "upper" and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and / or operation in addition to the orientations depicted in the figures. For example, if a device in the figures is inverted, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of above and below. The devices can be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0038] As used herein, the singular form "a", "an" and "the" include plural references unless the context clearly dictates otherwise. As used herein, the term "comprises" and / or "comprising", when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0039] Embodiments of the application are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the application. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Thus, embodiments of the application should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and / or a gradient of implant concentration at its edges rather than a binary change between implanted and non-implanted regions. Similarly, an implanted region illustrated as a rectangle will, typically, have a region of some implantation between the implanted region and the surface of the device on which the implanted region is formed. Thus, the regions illustrated in the figures are schematic and are not intended to limit the scope of the application. It is noted that the embodiments of the application can be used in a variety of applications, including but not limited to, power devices, power semiconductor devices, and the like.

[0040] With the continuous development of power devices, the unit power density of the power devices is significantly increased, resulting in a sharp increase in the heat generated by the devices. The accumulated heat inside the devices cannot be dissipated, causing the power devices to work in a high-temperature environment for a long time, reducing the reliability of the devices, and causing the power devices to fail.

[0041] At present, the packaging technology of the power chip in the traditional technology cannot meet the heat dissipation demand of the power chip, thereby affecting the performance of the power device and reducing the reliability and electrical properties of the power device.

[0042] The present application embodiment provides a heat dissipation device for a chip. Figure 1 and Figure 2 The heat dissipation device of the chip includes: a temperature detection unit 100, a first control unit 200, a first heat dissipation unit 300, a second control unit 400 and a second heat dissipation unit 500, wherein the temperature detection unit 100 is used to detect the temperature of the target chip 00, the first control unit 200 is electrically connected to the temperature detection unit 100, and is used to generate a first heat dissipation signal when the temperature of the target chip 00 is greater than a first preset temperature, and the first heat dissipation signal includes at least a first current; the first heat dissipation unit 300 is electrically connected to the first control unit 200, and is used to be arranged on one side of the target chip 00 to dissipate heat for the target chip 00, the first heat dissipation unit 300 includes thermoelectric material, and when the first current is different, the first heat dissipation unit The temperature of the target chip 00 is different from that of the target chip 300, and the temperature of the first heat dissipation unit 300 is lower than the temperature of the target chip 00; the second control unit 400 is electrically connected to the temperature detection unit 100, and is used to generate a second heat dissipation signal when the temperature of the target chip 00 is greater than the second preset temperature, and the second heat dissipation signal includes at least a second current, wherein the first preset temperature includes the second preset temperature; the second heat dissipation unit 500 is electrically connected to the second control unit 400, and is used to be arranged on one side of the target chip 00 to dissipate heat for the target chip 00, the second heat dissipation unit 500 includes thermoelectric material, and when the second current is different, the temperature of the second heat dissipation unit 500 is different, and the temperature of the second heat dissipation unit 500 is lower than the temperature of the target chip 00.

[0043] For example, the temperature detection unit 100 may include but is not limited to a temperature sensor. The temperature detection unit 100 may detect the temperature of the target chip 00 and convert the temperature change of the target chip 00 into an electrical signal.

[0044] For example, the material of the target chip 00 may include but is not limited to silicon, silicon oxide, gallium nitride, diamond, and silicon oxide. It should be noted that the target chip 00 does not belong to the chip packaging structure in the embodiment of the present application.

[0045] For example, the first control unit 200 may include, but is not limited to, a temperature control switch. When the temperature is greater than a first preset temperature, the first temperature control unit may control the first heat dissipation unit 300 to dissipate heat by opening a circuit to conduct current, thereby maintaining the temperature within a predetermined range. When the temperature is not greater than the first preset temperature, the first temperature control unit controls the circuit to disconnect, disabling the first heat dissipation unit 300. Specifically, in this embodiment, the material of the first control unit 200 may include, but is not limited to, ceramic, Bakelite, and silicon wafers.

[0046] Illustratively, the thermoelectric material of the first heat dissipation unit 300 is cooled under the action of the first current, so that the temperature of the first heat dissipation unit 300 is lower than the temperature of the target chip 00, so that the heat of the target chip 00 can be transferred to the first heat dissipation unit 300 to dissipate heat for the target chip 00.

[0047] Exemplarily, the second control unit 400 may include but is not limited to a temperature control switch. When the temperature is greater than a second preset temperature, the second temperature control unit may control the second heat dissipation unit 500 to dissipate heat by opening a circuit to conduct current, so as to keep the temperature within a predetermined range. When the temperature is not greater than the second preset temperature, the second temperature control unit controls the circuit to be disconnected, and the second heat dissipation unit 500 does not work. Specifically, in this embodiment, the material of the first control unit 200 may include but is not limited to ceramics, bakelite, and silicon wafers. The distance between the first control unit 200 and the second control unit 400 may be less than or equal to 10 mm. For example, the distance between the first control unit 200 and the second control unit 400 may be 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, or 10 mm.

[0048] Exemplarily, the thermoelectric material of the second heat dissipation unit 500 is cooled under the action of the second current, so that the temperature of the second heat dissipation unit 500 is lower than the temperature of the target chip 00, so that the heat of the target chip 00 can be transferred to the second heat dissipation unit 500 to dissipate heat for the target chip 00.

[0049] It should be noted that the thermoelectric material of the first heat dissipation unit 300 and the thermoelectric material of the second heat dissipation unit 500 both include a hot end and a cold end, wherein the side close to the target chip 00 is the cold end.

[0050] It should be noted that the first control unit 200 and the first heat dissipation unit 300, as well as the second control unit 400 and the second heat dissipation unit 500 are electrically connected through the copper tape 700. The width of the copper tape 700 can be 2 mm to 5 mm, for example, the width of the copper tape 700 can be 2 mm, 3 mm, 4 mm or 5 mm, and the thickness of the copper tape 700 can be 0.1 mm to 0.3 mm, for example, the thickness of the copper tape 700 can be 0.1 mm, 0.2 mm or 0.3 mm.

[0051] The chip heat dissipation device provided in the present application detects the temperature of the target chip 00 through a temperature detection unit 100. When the detection unit detects that the temperature of the target chip 00 is at a first preset temperature, the first control unit 200 generates a first heat dissipation signal. The first heat dissipation signal includes a first current, which can cause the thermoelectric material in the first heat dissipation unit 300 to cool down under the action of the first current, so that the temperature of the first heat dissipation unit 300 is lower than the temperature of the target chip 00, thereby allowing the heat of the target chip 00 to be transferred to the first heat dissipation unit 300 to dissipate heat from the target chip 00. At the same time, when the detection unit 100 detects that the temperature of the target chip 00 is at the second preset temperature, the second heat dissipation signal is generated by the second control unit 400 to drive the second heat dissipation unit 500 to assist in heat dissipation of the first heat dissipation unit 300, so that the first heat dissipation unit 300 and the second heat dissipation unit 500 work together to increase the heat dissipation area and heat dissipation path of the target chip 00, thereby accelerating the heat dissipation speed of the target chip 00, improving the heat dissipation efficiency, further reducing the heat accumulation of the target chip 00, and making the operating temperature of the power device within a safe temperature range, further reducing the risk of high-temperature operation of the target chip 00, and enhancing the reliability and electrical properties of the power device.

[0052] In some embodiments, the first preset temperature ranges from 70°C to 100°C, and the second preset temperature ranges from 150°C to 200°C.

[0053] As an example, the first preset temperature ranges from 70° C. to 100° C., for example, the first temperature may be 70° C., 80° C., 90° C., or 100° C. The second preset temperature ranges from 150° C. to 200° C., for example, the second temperature may be 150° C., 160° C., 170° C., 180° C., 190° C., or 200° C.

[0054] The heat dissipation device of the chip in the embodiment of the present application can dissipate heat for the target chip 00 according to the temperature level by setting the first preset temperature and the second preset temperature, and when the temperature of the target chip 00 is at the second preset temperature, the first heat dissipation unit 300 and the second heat dissipation unit 500 can jointly dissipate heat, thereby further increasing the heat dissipation area of ​​the target chip 00 and enhancing the reliability and electrical properties of the power device.

[0055] In some embodiments, please refer to Figure 2 The first heat dissipation unit 300 and the second heat dissipation unit 500 are respectively located on two opposite sides of the target chip 00 .

[0056] The heat dissipation device of the chip in the embodiment of the present application can achieve heat diffusion of the target chip 00 in opposite directions by arranging the first heat dissipation unit 300 and the second heat dissipation unit 500 on opposite sides of the target chip 00, thereby making the heat dissipation more uniform and improving the heat dissipation effect.

[0057] In some embodiments, see Figure 2 The first heat dissipation unit 300 and the second heat dissipation unit 500 are located on at least one side along the thickness direction of the target chip 00 .

[0058] The heat dissipation device of the chip in the embodiment of the present application has a large surface area in the thickness direction of the chip. By arranging the first heat dissipation unit 300 and the second heat dissipation unit 500 on at least one side along the thickness direction of the target chip 00, the contact area between the first heat dissipation unit 300 and the second heat dissipation unit 500 and the target chip 00 can be increased, thereby accelerating the heat dissipation rate of the target chip 00.

[0059] In some embodiments, see Figure 2 , the thermoelectric material of the first heat dissipation unit 300 is different from the thermoelectric material of the second heat dissipation unit 500.

[0060] As an example, the material of the first heat dissipation unit 300 may include, but is not limited to, bismuth telluride, lead telluride, or a silicon-germanium alloy, and the material of the second heat dissipation unit 500 may include, but is not limited to, bismuth telluride, lead telluride, or a silicon-germanium alloy. The thermoelectric material of the first heat dissipation unit 300 may be different from the thermoelectric material of the second heat dissipation unit 500. For example, if the thermoelectric material of the first heat dissipation unit 300 is bismuth telluride, the thermoelectric material of the second heat dissipation unit 500 may be lead telluride.

[0061] The heat dissipation device of the chip in the embodiment of the present application, by setting the thermoelectric material of the first heat dissipation unit 300 and the thermoelectric material of the second heat dissipation unit 500 to different materials, can flexibly set the thermoelectric material of the first heat dissipation unit 300 and the thermoelectric material of the second heat dissipation unit 500 according to the actual use environment and usage of the target chip 00, thereby achieving flexibility and practicality in material selection of the chip heat dissipation device.

[0062] In some embodiments, see Figure 2 , the target chip 00 is located on one side of the target substrate 600 , and the first heat dissipation unit 300 is located on a side of the target substrate 600 away from the target chip 00 .

[0063] As an example, the target substrate 600 can be used to carry the target chip 00. The material of the target substrate 600 may include, but is not limited to, aluminum oxide, aluminum nitride, or silicon nitride. The target substrate 600 may also include a wiring layer, an insulating ceramic layer, and a bottom heat dissipation layer stacked in sequence in a direction away from the target chip 00. The area of ​​the target substrate 600 may be greater than or equal to twice the area of ​​the target chip 00.

[0064] The chip heat dissipation device in the embodiment of the present application does not affect the subsequent wiring process of the target substrate 600 by arranging the first heat dissipation unit 300 on the side of the target substrate 600 away from the target chip 00, thereby dissipating heat for the target chip 00 over a large area.

[0065] In some embodiments, please refer to Figure 2 The heat dissipation device of the chip further includes: a heat conducting unit, the thermal conductivity of the heat conducting unit being greater than a preset threshold value, wherein, in the direction in which the target chip 00 points to the first heat dissipation unit 300, the heat conducting unit is located on at least one side surface of the first heat dissipation unit 300; and / or, in the direction in which the target chip points to the second heat dissipation unit 500, the heat conducting unit is located on at least one side surface of the second heat dissipation unit 500.

[0066] As an example, in the direction of the target chip 00 pointing toward the first heat dissipation unit 300, the heat conduction unit is located on at least one side surface of the first heat dissipation unit 300. The material of the heat conduction unit may include, but is not limited to, at least one of a high-temperature alloy solder, sintered silver, sintered copper, and porous copper. The dimension of the heat conduction unit in the thickness direction of the target chip 00 may be 0.02 mm to 0.2 mm. For example, the dimension of the heat conduction unit in the thickness direction of the target chip 00 may be 0.02 mm, 0.04 mm, 0.06 mm, 0.08 mm, 0.1 mm, 0.12 mm, 0.14 mm, 0.16 mm, 0.18 mm, or 0.2 mm.

[0067] In another example, the heat conducting unit is located on at least one side of the second heat dissipating unit 500 in the direction of the target chip 00 pointing toward the second heat dissipating unit 500. The material of the heat conducting unit may include, but is not limited to, at least one of a high-temperature alloy solder, sintered silver, sintered copper, and porous copper. The dimension of the heat conducting unit in the thickness direction of the target chip 00 may be 0.02 mm to 0.2 mm. For example, the dimension of the heat conducting unit in the thickness direction of the target chip 00 may be 0.02 mm, 0.04 mm, 0.06 mm, 0.08 mm, 0.1 mm, 0.12 mm, 0.14 mm, 0.16 mm, 0.18 mm, or 0.2 mm.

[0068] In yet another example, the heat conduction unit is located on at least one side surface of the first heat dissipation unit 300 in a direction in which the target chip 00 is directed to the first heat dissipation unit 300; and the heat conduction unit is located on at least one side surface of the second heat dissipation unit 500 in a direction in which the target chip is directed to the second heat dissipation unit 500. Specifically, the heat conduction unit can include a first heat conduction unit and a second heat conduction unit, the first heat conduction unit is located on at least one side surface of the first heat dissipation unit 300 in a direction in which the target chip 00 is directed to the first heat dissipation unit 300, and a material of the first heat conduction unit can include, but is not limited to, at least one of high-temperature alloy solder, sintered silver, sintered copper, and porous copper. A size of the first heat conduction unit in a thickness direction of the target chip 00 can be 0.02mm-0.2mm, for example, the size of the first heat conduction unit in the thickness direction of the target chip 00 can be 0.02mm, 0.04mm, 0.06mm, 0.08mm, 0.1mm, 0.12mm, 0.14mm, 0.16mm, 0.18mm, or 0.2mm. The second heat conduction unit is located on at least one side surface of the second heat dissipation unit 500 in a direction in which the target chip is directed to the second heat dissipation unit 500, and a material of the second heat conduction unit can include, but is not limited to, high-temperature alloy solder, sintered silver, sintered copper, and porous copper. A size of the second heat conduction unit in the thickness direction of the target chip 00 can be 0.02mm-0.2mm, for example, the size of the second heat conduction unit in the thickness direction of the target chip 00 can be 0.02mm, 0.04mm, 0.06mm, 0.08mm, 0.1mm, 0.12mm, 0.14mm, 0.16mm, 0.18mm, or 0.2mm.

[0069] The heat dissipation device of the chip provided in the embodiments of the present application can transfer the heat of the target chip 00 to the side away from the target chip 00 through the heat conduction unit, so as to dissipate the heat of the target chip 00 and improve the reliability and electrical properties of the device.

[0070] The embodiments of the present application also provide a packaging structure of a chip, please refer to Figure 3 The packaging structure of the chip includes: a chip 900 and the heat dissipation device 110 of the chip according to any one of the above embodiments.

[0071] The chip packaging structure provided in the present application detects the temperature of the chip 900 via a temperature detection unit in the heat dissipation device 110. When the detection unit detects that the temperature of the chip 900 is at a first preset temperature, the first control unit generates a first heat dissipation signal. The first heat dissipation signal includes a first current. The first heat dissipation signal can cause the thermoelectric material in the first heat dissipation unit to cool down under the action of the first current, so that the temperature of the first heat dissipation unit is lower than the temperature of the chip 900, thereby allowing the heat of the chip 900 to be transferred to the first heat dissipation unit to dissipate heat from the chip 900. At the same time, when the detection unit detects that the temperature of the chip 900 is at a second preset temperature, the second control unit generates a second heat dissipation signal, driving the second heat dissipation unit to assist the first heat dissipation unit in dissipating heat. The first heat dissipation unit and the second heat dissipation unit work together to increase the heat dissipation area and heat dissipation path of the target chip, thereby accelerating the heat dissipation speed of the chip 900, improving heat dissipation efficiency, further reducing heat accumulation in the target chip, and keeping the operating temperature of the power device within a safe temperature range. This further reduces the risk of high-temperature operation of the chip 900 and enhances the reliability and electrical performance of the power device.

[0072] In some embodiments, see Figure 4 The first heat dissipation unit 300 and the second heat dissipation unit 500 in the heat dissipation device of the chip are respectively located on two opposite sides of the chip 900 in the thickness direction.

[0073] The chip packaging structure in the embodiment of the present application can achieve heat diffusion of the chip 900 in opposite directions by arranging the first heat dissipation unit 300 and the second heat dissipation unit 500 on opposite sides of the chip 900, thereby making the heat dissipation more uniform and improving the heat dissipation effect.

[0074] In some embodiments, see Figure 4 The chip packaging structure further includes: a metal cover plate 120, located on a side of the first heat dissipation unit 300 away from the chip; and a heat sink substrate 130, located on a side of the second heat dissipation unit 500 away from the chip.

[0075] As an example, the material of the metal cover plate 120 may include but is not limited to aluminum alloy, copper alloy, valve alloy, iron-nickel alloy, and the material of the heat sink base plate 130 may include but is not limited to copper alloy, aluminum alloy, diamond composite material, and copper composite material.

[0076] It should be noted that the metal cover 120 and the first heat dissipation unit 300 are connected by a highly thermally conductive material, which allows the heat from the first heat dissipation unit 300 to be efficiently and quickly transferred to the metal cover 120. The heat sink base plate 130 and the second heat dissipation unit 500 are also connected by a highly thermally conductive material, which allows the heat from the second heat dissipation unit 500 to be efficiently and quickly transferred to the heat sink base plate 130.

[0077] The chip heat dissipation device provided in the embodiments of the present application utilizes a metal cover plate 120 to conduct heat from the first heat dissipation unit to the metal cover plate 120, thereby reducing the heat load on the first heat dissipation unit. Furthermore, a heat sink substrate 130 is provided on a side of the second heat dissipation unit away from the first heat dissipation unit, thereby conducting heat from the second heat dissipation unit to the heat sink substrate 130, thereby reducing the heat load on the second heat dissipation unit. This, in turn, reduces the operating environment surrounding the chip 900 and improves the electrical performance and reliability of the device.

[0078] The technical features of the above-mentioned embodiments can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0079] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A heat dissipation device for a chip, characterized in that: include: A temperature detection unit, used to detect the temperature of the target chip; a first control unit, electrically connected to the temperature detection unit, configured to generate a first heat dissipation signal when the temperature of the target chip is greater than a first preset temperature, wherein the first heat dissipation signal includes at least a first current; a first heat dissipation unit, electrically connected to the first control unit, and configured to be disposed on one side of the target chip to dissipate heat from the target chip, the first heat dissipation unit comprising a thermoelectric material, wherein the temperature of the first heat dissipation unit is different when the first current is different, and the temperature of the first heat dissipation unit is lower than the temperature of the target chip; a second control unit, electrically connected to the temperature detection unit, configured to generate a second heat dissipation signal when the temperature of the target chip is greater than a second preset temperature, the second heat dissipation signal comprising at least a second current, wherein the second preset temperature is greater than the first preset temperature; a second heat dissipation unit, electrically connected to the second control unit, and configured to be disposed on one side of the target chip to dissipate heat from the target chip, the second heat dissipation unit comprising a thermoelectric material, wherein the temperature of the second heat dissipation unit is different when the second current is different, and the temperature of the second heat dissipation unit is lower than the temperature of the target chip; a heat conduction unit, the thermal conductivity of the heat conduction unit being greater than a preset threshold, wherein, in a direction in which the target chip points toward the first heat dissipation unit, the heat conduction unit is located on at least one side surface of the first heat dissipation unit; and / or, In the direction in which the target chip points to the second heat dissipation unit, the heat conduction unit is located on at least one side surface of the second heat dissipation unit; The first heat dissipation unit and the second heat dissipation unit are respectively located on two opposite sides of the target chip; the target chip is located on one side of the target substrate, and the first heat dissipation unit is located on a side of the target substrate away from the target chip.

2. The heat dissipation device for a chip according to claim 1, characterized in that: The first preset temperature ranges from 70°C to 100°C, and the second preset temperature ranges from 150°C to 200°C.

3. The heat dissipation device for a chip according to claim 1, wherein: The first control unit and the first heat dissipation unit, as well as the second control unit and the second heat dissipation unit are electrically connected via copper tape.

4. The heat dissipation device for a chip according to claim 1, wherein: The first heat dissipation unit and the second heat dissipation unit are located on at least one side along a thickness direction of the target chip.

5. The heat dissipation device for a chip according to claim 1, wherein: The thermoelectric material of the first heat dissipation unit is different from the thermoelectric material of the second heat dissipation unit.

6. The chip heat dissipation device according to claim 1, characterized in that: The thermoelectric material of the first heat dissipation unit and the thermoelectric material of the second heat dissipation unit both include a hot end and a cold end.

7. The chip heat dissipation device according to claim 6, characterized in that: The side close to the target chip is a cold end.

8. A chip packaging structure, characterized in that: include: chip; The heat dissipation device for a chip according to any one of claims 1 to 7.

9. The chip packaging structure according to claim 8, characterized in that: The first heat dissipation unit and the second heat dissipation unit in the heat dissipation device of the chip are respectively located on two opposite sides of the chip in the thickness direction.

10. The chip packaging structure according to claim 9, characterized in that: Also includes: a metal cover plate, located on a side of the first heat dissipation unit away from the chip; The heat sink substrate is located on a side of the second heat dissipation unit away from the chip.

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