Light-irradiated thyristor surge protection structure and light-irradiated bidirectional thyristor having the same

Abstract

A light-irradiated thyristor surge protection structure and a light-irradiated bidirectional thyristor having the same. The light-irradiated thyristor surge protection structure comprises a first and a second terminal, a terminal resistor, a first and a second PNP bipolar transistor (BJT), a first and a second NPN BJT, and a first and a second base resistor. The emitters of the PNP BJTs are coupled to the first terminal through the terminal resistor. The collector of the first PNP BJT and the base of the first NPN BJT are coupled to the second terminal through the first base resistor. The collector of the second PNP BJT and the base of the second NPN BJT are coupled to the second terminal through the second base resistor. The base of the first PNP BJT is coupled to the collector of the first NPN BJT. The base of the second PNP BJT is coupled to the collector of the second NPN BJT. The collectors of the NPN BJTs are coupled. The emitters of the NPN BJTs are coupled to the second terminal.

Description

Technical Field

[0001] The invention relates to a light thyristor surge protection structure, in particular to a light thyristor surge protection structure capable of improving surge resistance. Background Art

[0002] In recent years, opto-thyrisytor and phototriac are widely used in circuit switching, isolation and overload protection applications.

[0003] At present, the surge protection capability of the components of both light-emitting thyristors and light-emitting bidirectional thyristors is becoming more and more important to avoid component misoperation or burning. Therefore, the surge protection capability of components has become a parameter that needs to be paid attention to in component specifications.

[0004] In actual application environments, if the surge resistance of components is to be greater than 5 amperes (A), the overall structure will be more complicated, making the manufacturing process more difficult. To improve the surge resistance, additional circuit structures (such as MOS transistors) or additional passive components (such as capacitors) are often required for series connection. These additional circuits and components will increase the complexity of the manufacturing process itself.

[0005] In view of this, how to improve the surge resistance of the light-illuminated thyristor and the light-illuminated bidirectional thyristor without increasing the complexity of the manufacturing process and maintaining the cost is an issue that needs to be solved urgently in the industry. Summary of the invention

[0006] The purpose of the present invention is to provide a surge protection structure for an illuminated thyristor and an illuminated bidirectional thyristor, which can improve the surge resistance to prevent the component from burning, and has the advantages of simplifying the manufacturing process and reducing costs. In other words, the surge protection structure can provide the component itself with high anti-interference ability, while stabilizing the process of its manufacturing process, reducing the finished product, and maintaining high competitiveness. In this way, for the field of industrial control, especially for components as a structure to isolate high voltage areas and low voltage areas, the present invention can provide high breakdown voltage and high anti-interference ability to avoid malfunction or burning of the component during high voltage output.

[0007] The architecture used in the present invention mainly has the following two points: (1) The original single PNPN structure is connected in parallel with a differential architecture, and the collector is coupled. This architecture can improve the power supply rejection ratio (PSRR) of the component itself, reduce the voltage disturbance effect between the two terminals, and at the same time, the shunt effect can be used to increase the maximum current value that can be tolerated as a whole, so that the surge resistance capability is also improved. (2) By connecting a resistor in series at one terminal of the PNPN architecture, impedance is provided to prevent the component from burning out in the event of a surge, and the resistance value of the resistor is carefully calculated to avoid adverse effects on the output current when the component is turned on.

[0008] To achieve the above-mentioned purpose, the present invention discloses a light-irradiated thyristor surge protection structure, comprising: a first terminal, a second terminal, a terminal resistor, a first PNP bipolar transistor, a second PNP bipolar transistor, a first NPN bipolar transistor, a second NPN bipolar transistor, a first base resistor and a second base resistor. An emitter of the first PNP bipolar transistor and an emitter of the second PNP bipolar transistor are coupled to the first terminal through the terminal resistor. A collector of the first PNP bipolar transistor and a base of the first NPN bipolar transistor are coupled to the second terminal through the first base resistor. A collector of the second PNP bipolar transistor and a base of the second NPN bipolar transistor are coupled to the second terminal through the second base resistor. A base of the first PNP bipolar transistor is coupled to a collector of the first NPN bipolar transistor. A base of the second PNP bipolar transistor is coupled to a collector of the second NPN bipolar transistor. The collector of the first NPN bipolar transistor is coupled to the collector of the second NPN bipolar transistor. An emitter of the first NPN bipolar transistor and an emitter of the second NPN bipolar transistor are coupled to the second terminal.

[0009] In one embodiment, the first PNP bipolar transistor and the first NPN bipolar transistor form a first light-illuminated thyristor, and the second PNP bipolar transistor and the second NPN bipolar transistor form a second light-illuminated thyristor.

[0010] In one embodiment, the light-irradiated thyristor surge protection structure is integrated into a chip.

[0011] In one embodiment, the first PNP bipolar transistor, the second PNP bipolar transistor, the first NPN bipolar transistor, the second NPN bipolar transistor, the first base resistor, and the second base resistor are integrated into a chip.

[0012] In addition, the present invention also discloses a light-illuminated bidirectional thyristor, comprising: a first terminal, a second terminal, an end resistor, a first PNP bipolar transistor, a second PNP bipolar transistor, a first NPN bipolar transistor, a second NPN bipolar transistor, a first base resistor, a second base resistor, a third PNP bipolar transistor, a fourth PNP bipolar transistor, a third NPN bipolar transistor, a fourth NPN bipolar transistor, a third base resistor and a fourth base resistor. An emitter of the first PNP bipolar transistor and an emitter of the second PNP bipolar transistor are coupled to the first terminal through the end resistor. A collector of the first PNP bipolar transistor and a base of the first NPN bipolar transistor are coupled to the second terminal through the first base resistor. A collector of the second PNP bipolar transistor and a base of the second NPN bipolar transistor are coupled to the second terminal through the second base resistor. A base of the first PNP bipolar transistor is coupled to a collector of the first NPN bipolar transistor. A base of the second PNP bipolar transistor is coupled to a collector of the second NPN bipolar transistor. The collector of the first NPN bipolar transistor is coupled to the collector of the second NPN bipolar transistor. An emitter of the first NPN bipolar transistor and an emitter of the second NPN bipolar transistor are coupled to the second terminal. An emitter of the third PNP bipolar transistor and an emitter of the fourth PNP bipolar transistor are coupled to the second terminal. A collector of the third PNP bipolar transistor and a base of the third NPN bipolar transistor are coupled to the first terminal through the third base resistor and the terminal resistor. A collector of the fourth PNP bipolar transistor and a base of the fourth NPN bipolar transistor are coupled to the first terminal through the fourth base resistor and the terminal resistor. A base of the third PNP bipolar transistor is coupled to a collector of the third NPN bipolar transistor. A base of the fourth PNP bipolar transistor is coupled to a collector of the fourth NPN bipolar transistor. The collector of the third NPN bipolar transistor is coupled to the collector of the fourth NPN bipolar transistor. An emitter of the third NPN bipolar transistor and an emitter of the fourth NPN bipolar transistor are coupled to the first terminal through the terminal resistor.

[0013] In one embodiment, the first PNP bipolar transistor and the first NPN bipolar transistor constitute a first light-illuminated thyristor, the second PNP bipolar transistor and the second NPN bipolar transistor constitute a second light-illuminated thyristor, the third PNP bipolar transistor and the third NPN bipolar transistor constitute a third light-illuminated thyristor, and the fourth PNP bipolar transistor and the fourth NPN bipolar transistor constitute a fourth light-illuminated thyristor.

[0014] In one embodiment, the collector of the first NPN bipolar transistor, the collector of the second NPN bipolar transistor, the collector of the third NPN bipolar transistor and the collector of the fourth NPN bipolar transistor are coupled, and the light-emitting bidirectional thyristor is integrated into a chip.

[0015] In one embodiment, the first PNP bipolar transistor, the second PNP bipolar transistor, the first NPN bipolar transistor, the second NPN bipolar transistor, the first base resistor and the second base resistor are integrated into a first chip, and the third PNP bipolar transistor, the fourth PNP bipolar transistor, the third NPN bipolar transistor, the fourth NPN bipolar transistor, the third base resistor and the fourth base resistor are integrated into a second chip.

[0016] In addition, the present invention also discloses a light-illuminated bidirectional thyristor, comprising: a first terminal, a second terminal, a first terminal resistor, a second terminal resistor, a first PNP bipolar transistor, a second PNP bipolar transistor, a first NPN bipolar transistor, a second NPN bipolar transistor, a first base resistor, a second base resistor, a third PNP bipolar transistor, a fourth PNP bipolar transistor, a third NPN bipolar transistor, a fourth NPN bipolar transistor, a third base resistor and a fourth base resistor. An emitter of the first PNP bipolar transistor and an emitter of the second PNP bipolar transistor are coupled to the first terminal through the first terminal resistor. A collector of the first PNP bipolar transistor and a base of the first NPN bipolar transistor are coupled to the second terminal through the first base resistor. A collector of the second PNP bipolar transistor and a base of the second NPN bipolar transistor are coupled to the second terminal through the second base resistor. A base of the first PNP bipolar transistor is coupled to a collector of the first NPN bipolar transistor. A base of the second PNP bipolar transistor is coupled to a collector of the second NPN bipolar transistor. The collector of the first NPN bipolar transistor is coupled to the collector of the second NPN bipolar transistor. An emitter of the first NPN bipolar transistor and an emitter of the second NPN bipolar transistor are coupled to the second terminal. An emitter of the third PNP bipolar transistor and an emitter of the fourth PNP bipolar transistor are coupled to the second terminal through the second terminal resistor. A collector of the third PNP bipolar transistor and a base of the third NPN bipolar transistor are coupled to the first terminal through the third base resistor. A collector of the fourth PNP bipolar transistor and a base of the fourth NPN bipolar transistor are coupled to the first terminal through the fourth base resistor. A base of the third PNP bipolar transistor is coupled to a collector of the third NPN bipolar transistor. A base of the fourth PNP bipolar transistor is coupled to a collector of the fourth NPN bipolar transistor. The collector of the third NPN bipolar transistor is coupled to the collector of the fourth NPN bipolar transistor. An emitter of the third NPN bipolar transistor and an emitter of the fourth NPN bipolar transistor are coupled to the first terminal.

[0017] In one embodiment, the first PNP bipolar transistor and the first NPN bipolar transistor constitute a first light-illuminated thyristor, the second PNP bipolar transistor and the second NPN bipolar transistor constitute a second light-illuminated thyristor, the third PNP bipolar transistor and the third NPN bipolar transistor constitute a third light-illuminated thyristor, and the fourth PNP bipolar transistor and the fourth NPN bipolar transistor constitute a fourth light-illuminated thyristor.

[0018] In one embodiment, the first terminal resistor, the first PNP bipolar transistor, the second PNP bipolar transistor, the first NPN bipolar transistor, the second NPN bipolar transistor, the first base resistor and the second base resistor are integrated into a first chip, and the second terminal resistor, the third PNP bipolar transistor, the fourth PNP bipolar transistor, the third NPN bipolar transistor, the fourth NPN bipolar transistor, the third base resistor and the fourth base resistor are integrated into a second chip.

[0019] After referring to the accompanying drawings and the embodiments described below, a person skilled in the art will be able to understand other objects, technical means and embodiments of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 A schematic circuit diagram of a light-irradiated thyristor surge protection structure according to an embodiment of the present invention;

[0021] Figure 2 A schematic diagram of a circuit of an illumination bidirectional thyristor according to an embodiment of the present invention;

[0022] Figure 3 is a circuit diagram of a light-illuminated bidirectional thyristor according to an embodiment of the present invention; and

[0023] Figure 4 FIG. 4 is a circuit diagram of a light-illuminated bidirectional thyristor according to an embodiment of the present invention.

[0024] Description of Reference Numerals

[0025] 1: Light thyratron surge protection structure

[0026] 2: Illuminated bidirectional thyristor

[0027] 3: Illuminated bidirectional thyristor

[0028] 4: Illuminated bidirectional thyristor

[0029] M1: First terminal

[0030] M2: Second terminal

[0031] RSP : Terminal resistance

[0032] R SP1 : First terminal resistance

[0033] R SP2 : Second terminal resistance

[0034] Q P1 :The first PNP type bipolar transistor

[0035] Q P2 :The second PNP bipolar transistor

[0036] Q P3 :The third PNP type bipolar transistor

[0037] Q P4 :The fourth PNP bipolar transistor

[0038] Q N1 :The first NPN bipolar transistor

[0039] Q N2 :The second NPN bipolar transistor

[0040] Q N3 :Third NPN type bipolar transistor

[0041] Q N4 :The fourth NPN bipolar transistor

[0042] R gk1 : First base resistor

[0043] R gk2 : Second base resistor

[0044] R gk3 : The third base resistor

[0045] R gk4 : The fourth base resistor. DETAILED DESCRIPTION

[0046] The present invention will be explained below by way of examples, and the examples of the present invention are not intended to limit the present invention to any specific environment, application or special method as described in the examples. Therefore, the description of the examples is only for the purpose of explaining the present invention, and is not intended to limit the present invention. It should be noted that in the following examples and drawings, elements that are not directly related to the present invention have been omitted and are not shown, and the dimensional relationship between the elements in the drawings is only for easy understanding, and is not intended to limit the actual proportion.

[0047] One embodiment of the present invention is Figure 1, which is a circuit diagram of a light-illuminated thyristor surge protection structure 1 according to an embodiment of the present invention.

[0048] The light thyristor surge protection structure 1 includes a first terminal M1, a second terminal M2, and a terminal resistor R SP , a first PNP bipolar junction transistor (BJT) Q P1 , a second PNP bipolar transistor Q P2 , a first NPN bipolar transistor Q N1 , a second NPN bipolar transistor Q N2 , a first base resistor R gk1 and a second base resistor R gk2 .

[0049] The first PNP bipolar transistor Q P1 An emitter of the second PNP bipolar transistor Q P2 The emitter of the SP is coupled to the first terminal M1. The first PNP bipolar transistor Q P1 A collector of a first NPN bipolar transistor Q N1 A base of the first base resistor R gk1 is coupled to the second terminal M2. The second PNP bipolar transistor Q P2 A collector of the second NPN bipolar transistor Q N2 A base of the second base resistor R gk2 Coupled to the second terminal M2.

[0050] The first PNP bipolar transistor Q P1 A base of the first NPN bipolar transistor Q N1 The second PNP bipolar transistor Q P2 A base of the second NPN bipolar transistor Q N2 The collector of the first NPN bipolar transistor Q N1 The collector of the second NPN bipolar transistor Q N2 The collector of the first NPN bipolar transistor Q N1 an emitter of the second NPN bipolar transistor Q N2 An emitter of is coupled to the second terminal M2.

[0051] The first base resistor R gk1 And the second base resistor R gk2 It can be designed according to the actual conduction capacity requirements, for example, usually about 100K ohms.gk1 And the second base resistor R gk2 At the second terminal M2 of the PNPN structure, it is possible to prevent the device from being mis-conducted under a surge voltage. SP The resistance value is about several hundred ohms. In addition, through the terminal resistance R SP Connected in series at the first terminal M1, the current can be controlled within a certain range to provide current protection to prevent the component from burning. gk1 , the second base resistor R gk2 And the terminal resistance R SP The setting can effectively improve the surge suppression capability.

[0052] like Figure 1 As shown, the light-irradiated thyristor surge protection structure 1 of the present invention uses a differential architecture (a first PNP bipolar transistor Q P1 and a first NPN bipolar transistor Q N1 The circuit formed by the second PNP bipolar transistor Q P2 and the second NPN bipolar transistor Q N2 The circuit formed by the parallel connection) enhances the surge protection capability, and the architecture can be manufactured using the original manufacturing process to maintain the switching performance of the component itself.

[0053] Furthermore, the first PNP bipolar transistor Q P1 The first NPN bipolar transistor Q N1 A first light thyristor and a second PNP bipolar transistor Q P2 The second NPN bipolar transistor Q N2 A second light thyratron is formed. Figure 1 The circuit shown connects two light-illuminating thyristors in parallel and couples the collectors of the NPN bipolar transistors of the two light-illuminating thyristors.

[0054] In one embodiment, the light-irradiated thyristor surge protection structure 1 can be integrated into a chip.

[0055] In one embodiment, the first PNP bipolar transistor Q P1 , the second PNP bipolar transistor Q P2 , the first NPN bipolar transistor Q N1 , the second NPN bipolar transistor Q N2 , the first base resistor R gk1 And the second base resistor R gk2 can be integrated into a chip. Therefore, in this embodiment, the chip is connected to an external terminal resistor R SP Connecting the first terminal M1 and the second terminal M2 in series is equivalent to Figure 1 The light-illuminating thyristor surge protection structure 1 is shown.

[0056] Another embodiment of the present invention is Figure 2 , which is a circuit diagram of a light-illuminating bidirectional thyristor 2 according to an embodiment of the present invention. The light-illuminating bidirectional thyristor 2 comprises a first terminal M1, a second terminal M2, an end resistor R SP , a first PNP bipolar transistor Q P1 , a second PNP bipolar transistor Q P2 , a first NPN bipolar transistor Q N1 , a second NPN bipolar transistor Q N2 , a first base resistor R gk1 , a second base resistor R gk2 , a third PNP bipolar transistor Q P3 , a fourth PNP bipolar transistor Q P4 , a third NPN bipolar transistor Q N3 , a fourth NPN bipolar transistor Q N4 , a third base resistor R gk3 and a fourth base resistor R gk4 .

[0057] The first PNP bipolar transistor Q P1 and the second PNP bipolar transistor Q P2 The third PNP bipolar transistor Q P3 and the fourth PNP bipolar transistor Q P4 The first NPN bipolar transistor Q N1 and the second NPN bipolar transistor Q N2 The third NPN bipolar transistor Q N3 and the fourth NPN bipolar transistor Q N4 The first base resistor R gk1 And the second base resistor R gk2 With the third base resistor R gk3 And the fourth base resistor R gk4 Same in substance.

[0058] The first PNP bipolar transistor Q P1 An emitter of the second PNP bipolar transistor Q P2 The emitter of the SP is coupled to the first terminal M1. The first PNP bipolar transistor Q P1 A collector of a first NPN bipolar transistor Q N1 A base of the first base resistor R gk1is coupled to the second terminal M2. The second PNP bipolar transistor Q P2 A collector of the second NPN bipolar transistor Q N2 A base of the second base resistor R gk2 is coupled to the second terminal M2. The first PNP bipolar transistor Q P1 A base of the first NPN bipolar transistor Q N1 The second PNP bipolar transistor Q P2 A base of the second NPN bipolar transistor Q N2 The collector of the first NPN bipolar transistor Q N1 The collector of the second NPN bipolar transistor Q N2 The collector of the first NPN bipolar transistor Q N1 An emitter of the second NPN bipolar transistor Q N2 An emitter of is coupled to the second terminal M2.

[0059] The third PNP bipolar transistor Q P3 an emitter of the fourth PNP bipolar transistor Q P4 An emitter of the third PNP bipolar transistor Q is coupled to the second terminal M2. P3 The collector of the third NPN bipolar transistor Q N3 A base of the gk3 And the terminal resistance R SP is coupled to the first terminal M1. A fourth PNP bipolar transistor Q P4 A collector of the fourth NPN bipolar transistor Q N4 A base of the gk4 And the terminal resistance R SP is coupled to the first terminal M1. The third PNP bipolar transistor Q P3 A base of the third NPN bipolar transistor Q N3 The fourth PNP bipolar transistor Q P4 A base of a fourth NPN bipolar transistor Q N4 The third NPN bipolar transistor Q N3 The collector of the fourth NPN bipolar transistor Q N4 The collector of the third NPN bipolar transistor Q N3 an emitter of the fourth NPN bipolar transistor Q N4 The emitter of the SP Coupled to the first terminal M1.

[0060] Furthermore, the first PNP bipolar transistor Q P1 The first NPN bipolar transistor Q N1 A first light-illuminating thyristor is formed, and a second PNP bipolar transistor Q P2 The second NPN bipolar transistor Q N2 A second light-illuminating thyristor is formed, and a third PNP bipolar transistor Q P3 The third NPN bipolar transistor Q N3 A third light thyristor and a fourth PNP bipolar transistor Q P4 The fourth NPN bipolar transistor Q N4 A fourth light-illuminating thyratron is formed.

[0061] In one embodiment, the first PNP bipolar transistor Q P1 , the second PNP bipolar transistor Q P2 , the first NPN bipolar transistor Q N1 , the second NPN bipolar transistor Q N2 , the first base resistor R gk1 And the second base resistor R gk2 are integrated into a first chip. Similarly, the third PNP bipolar transistor Q P3 , the fourth PNP bipolar transistor Q P4 , the third NPN bipolar transistor Q N3 , the fourth NPN bipolar transistor Q N4 , the third base resistor R gk3 And the fourth base resistor R gk4 Integrated into a second chip.

[0062] It should be noted that the first chip and the second chip are substantially the same. Figure 2 The circuit architecture shown is equivalent to connecting two identical chips in reverse parallel and then connecting them to an external terminal resistor R SP It is connected in series between the first terminal M1 and the second terminal M2. This dual chip approach can simplify the manufacturing process, and the external terminal resistor can reduce the consideration of the possible current density of the resistor in the manufacturing process. At the same time, the winding of the components in each chip is simple, so the possible interference in the manufacturing process can be reduced. Furthermore, since the two chips are independent, the interference during reverse operation can be reduced.

[0063] Another embodiment of the present invention is Figure 3 As shown, it is a circuit diagram of a light-illuminating bidirectional thyristor 3 according to an embodiment of the present invention. Figure 2 In the embodiment shown in the figure, in this embodiment, the first NPN bipolar transistor Q N1 The collector of the second NPN bipolar transistor QN2 The collector of the third NPN bipolar transistor Q N3 The collector of the fourth NPN bipolar transistor Q N4 Therefore, in one embodiment, the light-illuminating bidirectional thyristor 3 can be integrated into a chip. Compared with the dual-chip method, the single-chip method can reduce the packaging cost and the wiring cost, and can reduce the component performance variables, and the final performance of the light-illuminating bidirectional thyristor can be verified after the manufacturing process is completed.

[0064] Another embodiment of the present invention is Figure 4 , which is a circuit diagram of a light-illuminating bidirectional thyristor 4 according to an embodiment of the present invention. The light-illuminating bidirectional thyristor 4 comprises: a first terminal M1, a second terminal M2, a first terminal resistor R SP1 , a second terminal resistor R SP2 , a first PNP bipolar transistor Q P1 , a second PNP bipolar transistor Q P2 , a first NPN bipolar transistor Q N1 , a second NPN bipolar transistor Q N2 , a first base resistor R gk1 , a second base resistor R gk2 , a third PNP bipolar transistor Q P3 , a fourth PNP bipolar transistor Q P4 , a third NPN bipolar transistor Q N3 , a fourth NPN bipolar transistor Q N4 , a third base resistor R gk3 and a fourth base resistor R gk4 .

[0065] The first PNP bipolar transistor Q P1 An emitter of the second PNP bipolar transistor Q P2 An emitter is connected through the first terminal resistor R SP1 is coupled to the first terminal M1. The first PNP bipolar transistor Q P1 A collector of the first NPN bipolar transistor Q N1 A base of the first base resistor R gk1 is coupled to the second terminal M2. The second PNP bipolar transistor Q P2 A collector of the second NPN bipolar transistor Q N2 A base of the second base resistor R gk2 is coupled to the second terminal M2. The first PNP bipolar transistor Q P1 A base of the first NPN bipolar transistor Q N1The second PNP bipolar transistor Q P2 A base of the second NPN bipolar transistor Q N2 The collector of the first NPN bipolar transistor Q N1 The collector of the second NPN bipolar transistor Q N2 The collector of the first NPN bipolar transistor Q N1 An emitter of the second NPN bipolar transistor Q N2 An emitter of is coupled to the second terminal M2.

[0066] The third PNP bipolar transistor Q P3 an emitter of the fourth PNP bipolar transistor Q P4 The emitter of the SP2 is coupled to the second terminal M2. The third PNP bipolar transistor Q P3 The collector of the third NPN bipolar transistor Q N3 A base of the gk3 is coupled to the first terminal M1. A fourth PNP bipolar transistor Q P4 A collector of the fourth NPN bipolar transistor Q N4 A base of the gk4 is coupled to the first terminal M1. The third PNP bipolar transistor Q P3 A base of the third NPN bipolar transistor Q N3 The fourth PNP bipolar transistor Q P4 A base of a fourth NPN bipolar transistor Q N4 The third NPN bipolar transistor Q N3 The collector of the fourth NPN bipolar transistor Q N4 The collector of the third NPN bipolar transistor Q N3 an emitter of and a fourth NPN bipolar transistor Q N4 An emitter of is coupled to the first terminal M1.

[0067] Furthermore, the first PNP bipolar transistor Q P1 The first NPN bipolar transistor Q N1 A first light-illuminating thyristor is formed, and a second PNP bipolar transistor Q P2 The second NPN bipolar transistor Q N2 A second light-illuminating thyristor is formed, and a third PNP bipolar transistor Q P3 The third NPN bipolar transistor Q N3A third light thyristor and a fourth PNP bipolar transistor Q P4 The fourth NPN bipolar transistor Q N4 A fourth light-illuminating thyratron is formed.

[0068] In one embodiment, the first terminal resistor R SP1 , the first PNP bipolar transistor Q P1 , the second PNP bipolar transistor Q P2 , the first NPN bipolar transistor Q N1 , the second NPN bipolar transistor Q N2 , the first base resistor R gk1 And the second base resistor R gk2 Can be integrated into a first chip and a second terminal resistor R SP2 , the third PNP bipolar transistor Q P3 , the fourth PNP bipolar transistor Q P4 , the third NPN bipolar transistor Q N3 , the fourth NPN bipolar transistor Q N4 , the third base resistor R gk3 And the fourth base resistor R gk4 Can be integrated into a second chip.

[0069] It should be noted that the first chip and the second chip are substantially the same. Figure 4 The circuit architecture shown is equivalent to connecting two identical chips in reverse parallel between the first terminal M1 and the second terminal M2. This dual-chip approach can simplify the manufacturing process and only consider the results of one direction. At the same time, the components in each chip are simply wound, so the possible interference in the manufacturing process can be reduced. Furthermore, since the two chips are independent, the interference during reverse operation can be reduced.

[0070] In summary, the present invention provides a surge protection structure for the light-illuminating thyristor and the light-illuminating bidirectional thyristor, which can improve the surge resistance to prevent the components from burning out, and has the advantages of simplifying the manufacturing process and reducing the cost.

[0071] The above embodiments are only used to illustrate the implementation methods of the present invention and to explain the technical features of the present invention, and are not used to limit the protection scope of the present invention. Any changes or equivalent arrangements that can be easily completed by those skilled in the art belong to the scope claimed by the present invention, and the scope of protection of the present invention shall be subject to the attached claims.

Claims

1. A light-irradiated thyristor surge protection structure, comprising: a first terminal; a second terminal; One-terminal resistance; a first PNP bipolar transistor; a second PNP bipolar transistor; a first NPN bipolar transistor; a second NPN bipolar transistor; a first base resistor; and a second base resistor; in: An emitter of the first PNP bipolar transistor and an emitter of the second PNP bipolar transistor are coupled to the first terminal through the terminal resistor; A collector of the first PNP bipolar transistor and a base of the first NPN bipolar transistor are coupled to the second terminal through the first base resistor; A collector of the second PNP bipolar transistor and a base of the second NPN bipolar transistor are coupled to the second terminal through the second base resistor; A base of the first PNP bipolar transistor is coupled to a collector of the first NPN bipolar transistor; A base of the second PNP bipolar transistor is coupled to a collector of the second NPN bipolar transistor; The collector of the first NPN bipolar transistor is coupled to the collector of the second NPN bipolar transistor; An emitter of the first NPN bipolar transistor and an emitter of the second NPN bipolar transistor are coupled to the second terminal.

2. The light-irradiated thyratron surge protection structure as claimed in claim 1, wherein: The first PNP bipolar transistor and the first NPN bipolar transistor form a first light-illuminating thyristor, and the second PNP bipolar transistor and the second NPN bipolar transistor form a second light-illuminating thyristor.

3. The light-irradiated thyratron surge protection structure as claimed in claim 1, wherein: The light thyristor surge protection structure is integrated into a chip.

4. The light-irradiated thyratron surge protection structure as claimed in claim 1, wherein: The first PNP bipolar transistor, the second PNP bipolar transistor, the first NPN bipolar transistor, the second NPN bipolar transistor, the first base resistor and the second base resistor are integrated into a chip.

5. An illumination bidirectional thyristor, comprising: a first terminal; a second terminal; One-terminal resistance; a first PNP bipolar transistor; a second PNP bipolar transistor; a first NPN bipolar transistor; a second NPN bipolar transistor; a first base resistor; a second base resistor; a third PNP bipolar transistor; a fourth PNP bipolar transistor; a third NPN bipolar transistor; a fourth NPN bipolar transistor; a third base resistor; and a fourth base resistor; in: An emitter of the first PNP bipolar transistor and an emitter of the second PNP bipolar transistor are coupled to the first terminal through the terminal resistor; A collector of the first PNP bipolar transistor and a base of the first NPN bipolar transistor are coupled to the second terminal through the first base resistor; A collector of the second PNP bipolar transistor and a base of the second NPN bipolar transistor are coupled to the second terminal through the second base resistor; A base of the first PNP bipolar transistor is coupled to a collector of the first NPN bipolar transistor; A base of the second PNP bipolar transistor is coupled to a collector of the second NPN bipolar transistor; The collector of the first NPN bipolar transistor is coupled to the collector of the second NPN bipolar transistor; An emitter of the first NPN bipolar transistor and an emitter of the second NPN bipolar transistor are coupled to the second terminal; An emitter of the third PNP bipolar transistor and an emitter of the fourth PNP bipolar transistor are coupled to the second terminal; A collector of the third PNP bipolar transistor and a base of the third NPN bipolar transistor are coupled to the first terminal through the third base resistor and the terminal resistor; A collector of the fourth PNP bipolar transistor and a base of the fourth NPN bipolar transistor are coupled to the first terminal through the fourth base resistor and the terminal resistor; A base of the third PNP bipolar transistor is coupled to a collector of the third NPN bipolar transistor; A base of the fourth PNP bipolar transistor is coupled to a collector of the fourth NPN bipolar transistor; The collector of the third NPN bipolar transistor is coupled to the collector of the fourth NPN bipolar transistor; An emitter of the third NPN bipolar transistor and an emitter of the fourth NPN bipolar transistor are coupled to the first terminal through the terminal resistor.

6. The light-illuminating bidirectional thyristor according to claim 5, wherein: The first PNP bipolar transistor and the first NPN bipolar transistor constitute a first light-illuminated thyristor, the second PNP bipolar transistor and the second NPN bipolar transistor constitute a second light-illuminated thyristor, the third PNP bipolar transistor and the third NPN bipolar transistor constitute a third light-illuminated thyristor, and the fourth PNP bipolar transistor and the fourth NPN bipolar transistor constitute a fourth light-illuminated thyristor.

7. The light-illuminating bidirectional thyristor according to claim 5, wherein: The collector of the first NPN bipolar transistor, the collector of the second NPN bipolar transistor, the collector of the third NPN bipolar transistor and the collector of the fourth NPN bipolar transistor are coupled, and the light-illuminating bidirectional thyristor is integrated into a chip.

8. The light-illuminating bidirectional thyristor according to claim 5, wherein: The first PNP bipolar transistor, the second PNP bipolar transistor, the first NPN bipolar transistor, the second NPN bipolar transistor, the first base resistor and the second base resistor are integrated into a first chip, and the third PNP bipolar transistor, the fourth PNP bipolar transistor, the third NPN bipolar transistor, the fourth NPN bipolar transistor, the third base resistor and the fourth base resistor are integrated into a second chip.

9. An illumination bidirectional thyristor, comprising: a first terminal; a second terminal; a first terminal resistor; a second terminal resistor; a first PNP bipolar transistor; a second PNP bipolar transistor; a first NPN bipolar transistor; a second NPN bipolar transistor; a first base resistor; a second base resistor; a third PNP bipolar transistor; a fourth PNP bipolar transistor; a third NPN bipolar transistor; a fourth NPN bipolar transistor; a third base resistor; and a fourth base resistor; in: An emitter of the first PNP bipolar transistor and an emitter of the second PNP bipolar transistor are coupled to the first terminal through the first terminal resistor; A collector of the first PNP bipolar transistor and a base of the first NPN bipolar transistor are coupled to the second terminal through the first base resistor; A collector of the second PNP bipolar transistor and a base of the second NPN bipolar transistor are coupled to the second terminal through the second base resistor; A base of the first PNP bipolar transistor is coupled to a collector of the first NPN bipolar transistor; A base of the second PNP bipolar transistor is coupled to a collector of the second NPN bipolar transistor; The collector of the first NPN bipolar transistor is coupled to the collector of the second NPN bipolar transistor; An emitter of the first NPN bipolar transistor and an emitter of the second NPN bipolar transistor are coupled to the second terminal; An emitter of the third PNP bipolar transistor and an emitter of the fourth PNP bipolar transistor are coupled to the second terminal through the second terminal resistor; A collector of the third PNP bipolar transistor and a base of the third NPN bipolar transistor are coupled to the first terminal through the third base resistor; A collector of the fourth PNP bipolar transistor and a base of the fourth NPN bipolar transistor are coupled to the first terminal through the fourth base resistor; A base of the third PNP bipolar transistor is coupled to a collector of the third NPN bipolar transistor; A base of the fourth PNP bipolar transistor is coupled to a collector of the fourth NPN bipolar transistor; The collector of the third NPN bipolar transistor is coupled to the collector of the fourth NPN bipolar transistor; An emitter of the third NPN bipolar transistor and an emitter of the fourth NPN bipolar transistor are coupled to the first terminal.

10. The light-illuminating bidirectional thyristor according to claim 9, wherein: The first PNP bipolar transistor and the first NPN bipolar transistor constitute a first light-illuminated thyristor, the second PNP bipolar transistor and the second NPN bipolar transistor constitute a second light-illuminated thyristor, the third PNP bipolar transistor and the third NPN bipolar transistor constitute a third light-illuminated thyristor, and the fourth PNP bipolar transistor and the fourth NPN bipolar transistor constitute a fourth light-illuminated thyristor.

11. The light-illuminating bidirectional thyristor according to claim 9, wherein: The first terminal resistor, the first PNP bipolar transistor, the second PNP bipolar transistor, the first NPN bipolar transistor, the second NPN bipolar transistor, the first base resistor and the second base resistor are integrated into a first chip, and the second terminal resistor, the third PNP bipolar transistor, the fourth PNP bipolar transistor, the third NPN bipolar transistor, the fourth NPN bipolar transistor, the third base resistor and the fourth base resistor are integrated into a second chip.

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