Electrostatic discharge circuit and radio frequency front-end module

Abstract

The invention discloses an electrostatic discharge circuit and a radio frequency front-end module. The electrostatic discharge circuit comprises a trigger module, a discharge module and a control module. The trigger module comprises a first resistor and a capacitor. The discharge module comprises a first phase inverter and a first switch tube, the input end of the first phase inverter is connected to the common end of the first resistor and the capacitor, and the output end of the first phase inverter is connected to the control end of the first switch tube. The control module comprises a detection unit and a control unit, the detection unit is used for outputting a detection signal when the power supply end is in a power-on state, and the control unit is used for controlling the first resistor to be in a short-circuit state or / and controlling the capacitor to be in an open-circuit state when the detection signal is received. The first resistor and the capacitor cannot form an RC trigger, so that the situation that the surge voltage in the power supply voltage mistakenly conducts the first switch tube can be avoided, and the anti-surge capability of the electrostatic discharge circuit is improved.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and more specifically, to an electrostatic discharge circuit and a radio frequency front-end module. Background Art

[0002] At present, RF front-end modules have been widely used in wireless communications, the Internet of Things, smart homes and other fields. They can process RF signals (for example, power amplification, modulation and demodulation, etc.) to complete the tasks of receiving and transmitting RF signals.

[0003] In existing RF front-end modules, an electrostatic discharge (ESD) circuit is usually set up for electrostatic protection. However, the existing ESD circuit is easily triggered by interference (e.g., surge) in the power supply voltage, resulting in a large current in the power supply voltage, which in turn affects the normal power supply of the RF front-end module. Summary of the invention

[0004] Embodiments of the present application provide an electrostatic discharge circuit and a radio frequency front-end module.

[0005] According to the first aspect of the present application, an embodiment of the present application provides an electrostatic discharge circuit, which is provided with a power supply end and a ground end, and the electrostatic discharge circuit includes a trigger module, a discharge module and a control module. Among them, the trigger module includes a first resistor and a capacitor, one end of the first resistor is connected to one end of the capacitor, the other end of the first resistor is connected to the power supply end, and the other end of the capacitor is connected to the ground end. The discharge module includes a first inverter and a first switch tube, and the first switch tube is connected between the power supply end and the ground end; the input end of the first inverter is connected to the common end of the first resistor and the capacitor, and the output end of the first inverter is connected to the control end of the first switch tube. The control module includes a detection unit and a control unit, the detection unit is connected between the power supply end and the ground end, and the control unit is electrically connected to the detection unit and the trigger module respectively; the detection unit is used to output a detection signal when the power supply end is in a power-on state, and the control unit is used to control the first resistor to be in a short-circuit state, or / and, control the capacitor to be in an open-circuit state when receiving the detection signal.

[0006] The embodiment of the present application provides an electrostatic discharge circuit, which includes a trigger module, a discharge module and a control module. When the power supply end is in a power-off state, a first resistor and a capacitor are connected in series between the power supply end and the ground end to form an RC trigger, and the RC trigger and the discharge module can jointly form an electrostatic discharge circuit architecture to discharge the electrostatic current to the ground, thereby providing electrostatic protection to the RF front-end module equipped with the electrostatic discharge circuit.

[0007] When the power supply end is in the power-on state, it means that the RF front-end module equipped with the electrostatic discharge circuit is in the power supply state. At this time, the control unit will receive the detection signal output by the detection unit, and then control the first resistor to be in the short-circuit state, or / and control the capacitor to be in the open-circuit state. In other words, the first resistor and the capacitor cannot form an RC trigger, thereby preventing the surge voltage in the power supply voltage from misleadingly turning on the first switch tube, so as to improve the surge resistance of the electrostatic discharge circuit.

[0008] Specifically, when the first resistor is in a short-circuit state, or / and the capacitor is in an open-circuit state, the response time of the trigger module is in the nanosecond level, or even in the picosecond level, and at this time, the surge voltage cannot trigger the RC trigger to turn on the first switch tube. In addition, since the power supply voltage (that is, the high-level signal) is input to the input end of the first inverter, the output end of the first inverter outputs a low-level signal to keep the first switch tube in the off state.

[0009] Furthermore, when the power supply end is in the power-on state and an ESD event occurs, the electrostatic discharge voltage of the power supply will instantly reach several thousand volts, which will cause the PN junction between the drain end of the first switch tube and the substrate to undergo avalanche breakdown to trigger the first switch tube to turn on, thereby achieving the release of static electricity. However, the surge voltage is usually low and cannot trigger the avalanche breakdown of the first switch tube to turn on the first switch tube. Therefore, when the electrostatic discharge circuit realizes electrostatic protection, it also has a strong surge resistance, which can avoid the problem of the electrostatic discharge circuit being mistakenly triggered by the surge voltage, so as to ensure that the power supply voltage can supply power to the RF front-end module normally.

[0010] According to the second aspect of the present application, the embodiment of the present application also provides an electrostatic discharge circuit, which is provided with a power supply end and a ground end, and the electrostatic discharge circuit includes a trigger module, a discharge module and a control module. Among them, the trigger module includes a first resistor and a capacitor, one end of the first resistor is connected to one end of the capacitor, the other end of the first resistor is connected to the power supply end, and the other end of the capacitor is connected to the ground end. The discharge module includes a first inverter and a first switch tube, the first switch tube is connected between the power supply end and the ground end; the input end of the first inverter is connected to the common end of the first resistor and the capacitor, and the output end of the first inverter is connected to the control end of the first switch tube. The control module includes a detection unit and a control unit, the detection unit is connected between the power supply end and the ground end, and the control unit is electrically connected to the detection unit and the trigger module respectively; the detection unit is used to output a detection signal when the power supply end is in a power-on state, and the control unit is used to adjust the connection state of the capacitor and / or the first resistor when receiving the detection signal, so that the response time of the trigger module is less than the duration of the power surge.

[0011] The embodiment of the present application provides an electrostatic discharge circuit, which includes a trigger module, a discharge module and a control module. When the power supply end is in a power-off state, a first resistor and a capacitor are connected in series between the power supply end and the ground end to form an RC trigger, and the RC trigger and the discharge module can jointly form an electrostatic discharge circuit architecture to discharge the electrostatic current to the ground, thereby providing electrostatic protection to the RF front-end module equipped with the electrostatic discharge circuit.

[0012] When the power supply end is in the power-on state, it means that the RF front-end module equipped with the electrostatic release circuit is in the power supply state. At this time, the control unit will receive the detection signal output by the detection unit, and adjust the connection state of at least one of the capacitor and the first resistor, for example, control the first resistor to be in a short-circuit state, or / and control the capacitor to be in an open-circuit state, so that the response time of the trigger module is less than the duration of the power surge, thereby avoiding the situation where the surge voltage in the power supply voltage misleads to turn on the first switch tube, so as to improve the surge resistance of the electrostatic release circuit.

[0013] Specifically, the shortened response time of the trigger module is in the nanosecond level, or even in the picosecond level, at which time the surge voltage cannot trigger the RC trigger to turn on the first switch tube. In addition, since the power supply voltage (i.e., the high-level signal) is input to the input end of the first inverter, the output end of the first inverter outputs a low-level signal to keep the first switch tube in the off state.

[0014] Furthermore, when the power supply end is in the power-on state and an ESD event occurs, the power supply voltage will instantly reach tens of thousands of volts to trigger the first switch tube to turn on, thereby achieving the release of static electricity. The surge voltage is usually tens of volts or hundreds of volts, which cannot trigger the first switch tube to turn on. Therefore, when the electrostatic discharge circuit realizes electrostatic protection, it also has a strong surge resistance, which can avoid the problem of the electrostatic discharge circuit being mistakenly triggered by the surge voltage, so as to ensure that the power supply voltage can supply power to the RF front-end module normally.

[0015] According to the third aspect of the present application, an embodiment of the present application also provides a radio frequency front-end module, which is provided with a power port for connecting an external power supply. The radio frequency front-end module includes the above-mentioned electrostatic release circuit, and the power supply end of the electrostatic release circuit is connected to the power port. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0017] Figure 1 It is a structural diagram of the RF front-end module provided in an embodiment of the present application.

[0018] Figure 2 yes Figure 1 The schematic diagram of the structure of the electrostatic discharge circuit in the RF front-end module is shown.

[0019] Figure 3 yes Figure 2 The circuit structure diagram of the discharge module in the electrostatic discharge circuit shown.

[0020] Figure 4 yes Figure 2 A cross-sectional schematic diagram of a first switch tube in an electrostatic release circuit is shown.

[0021] Figure 5 yes Figure 2 A structural schematic diagram of a control unit in an electrostatic release circuit is shown.

[0022] Figure 6 yes Figure 2 Another structural schematic diagram of the control unit in the electrostatic release circuit is shown.

[0023] Figure 7 yes Figure 2 Another structural schematic diagram of a control unit in an electrostatic release circuit is shown.

[0024] Figure 8 yes Figure 2 Another structural schematic diagram of a control unit in an electrostatic release circuit is shown.

[0025] Fig. 9 yes Figure 2 Another structural schematic diagram of the control unit in the electrostatic release circuit is shown.

[0026] Fig.10 yes Figure 2 A structural schematic diagram of a detection unit in an electrostatic discharge circuit is shown.

[0027] Fig.11 yes Figure 2 Another structural schematic diagram of the detection unit in the electrostatic release circuit is shown. DETAILED DESCRIPTION

[0028] In order to enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application.

[0029] See also Figure 1 The embodiment of the present application provides an electrostatic discharge circuit 100 and a radio frequency front-end module 400 equipped with the electrostatic discharge circuit 100. The radio frequency front-end module 400 is a component that integrates two or more discrete devices such as a radio frequency switch, a low-noise amplifier, a filter, a duplexer, a power amplifier, etc. into an independent module, which can improve the integration and hardware performance and make the volume miniaturized.

[0030] Specifically, the RF front-end module 400 is suitable for being set in an electronic device, and is used to receive and send RF signals to realize the wireless communication function of the electronic device. Exemplarily, the electronic device can be a 4G or 5G communication device such as a smart phone, a tablet computer, or a smart watch. In addition, with the development of 5G technology, the requirements for the performance of the RF front-end module are getting higher and higher. The technical solution of this application can be applied to the 5G RF front-end module to improve the communication performance of the 5G communication device.

[0031] In this embodiment, the RF front-end module 400 is provided with a power port 401 for connecting an external power supply (not shown in the figure) and a ground port 403 for grounding, wherein the external power supply is used to provide a power supply voltage VDD, and the power supply voltage is used to power the components (e.g., low noise amplifier, power amplifier, etc.) in the RF front-end module 400. Specifically, the power supply voltage VDD can be 1.8V, 2.5V, 3.3V, 4.2V, 5V, etc.

[0032] The electrostatic discharge circuit 100 is provided with a power supply terminal 102 and a ground terminal 104, wherein the power supply terminal 102 is connected to the power port 401, and the ground terminal 104 is connected to the ground port 403, and the electrostatic discharge circuit 100 is used to provide electrostatic protection to the RF front-end module 400. Specifically, when a human body, equipment or device that has accumulated a certain amount of electrostatic charge contacts a port (for example, the power supply terminal 102) of the RF front-end module 400, it will discharge to the port to generate an instantaneous high voltage and high current. In this case, the electrostatic discharge circuit 100 will turn on the signal branch between the power supply terminal 102 and the ground terminal 104 to release the electrostatic current to the ground, thereby preventing the electrostatic current from entering the interior of the RF front-end module 400 through the power supply terminal 102 to damage the internal components.

[0033] See also Figure 2 , the electrostatic discharge circuit 100 may include a trigger module 10, a discharge module 20 and a control module 30. The trigger module 10 may include a first resistor 120 and a capacitor 140, one end of the first resistor 120 is connected to one end of the capacitor 140, the other end of the first resistor 120 is connected to the power supply end 102, and the other end of the capacitor 140 is connected to the ground end 104. The discharge module 20 may include a first inverter 210 and a first switch tube 230, the first switch tube 230 is connected between the power supply end 102 and the ground end 104; the input end 2101 of the first inverter 210 is connected to the common end of the first resistor 120 and the capacitor 140, and the output end 2103 of the first inverter 210 is connected to the control end 2301 of the first switch tube 230. The control module 30 may include a detection unit 320 and a control unit 340, the detection unit 320 is connected between the power supply end 102 and the ground end 104, and the control unit 340 is electrically connected to the detection unit 320 and the trigger module 10 respectively; the detection unit 320 is used to output a detection signal when the power supply end 102 is in a power-on state, and the control unit 340 is used to control the first resistor 120 to be in a short-circuit state, or / and, control the capacitor 140 to be in an open-circuit state when receiving the detection signal.

[0034] An embodiment of the present application provides an electrostatic release circuit 100. When the power supply terminal 102 is in a power-off state (i.e., no power supply voltage is input), a first resistor 120 and a capacitor 140 are connected in series between the power supply terminal 102 and the ground terminal 104 to form an RC trigger. The RC trigger and the discharge module 20 can jointly form an electrostatic release circuit architecture to release the electrostatic current to the ground, thereby providing electrostatic protection to the RF front-end module 400 configured with the electrostatic release circuit 100.

[0035] When the power supply end 102 is in the power-on state (i.e., the input power supply voltage VDD), it indicates that the RF front-end module 400 equipped with the electrostatic discharge circuit 100 is in the power supply state. At this time, the control unit 340 receives the detection signal output by the detection unit 320, and then controls the first resistor 120 to be in the short-circuit state, or / and controls the capacitor 140 to be in the open-circuit state. In other words, the first resistor 120 and the capacitor 140 cannot form an RC trigger, and thus the surge voltage in the power supply voltage can be prevented from misleadingly turning on the first switch tube 230, so as to improve the surge resistance of the electrostatic discharge circuit 100.

[0036] Specifically, when the first resistor 120 is in a short-circuit state, or / and the capacitor 140 is in an open-circuit state, the response time of the trigger module 10 is in the nanosecond level, or even in the picosecond level. At this time, the surge voltage cannot trigger the RC trigger to turn on the first switch tube 230. In addition, since the power supply voltage (that is, the high-level signal) is input to the input terminal 2101 of the first inverter 210, the output terminal 2103 of the first inverter 210 will output a low-level signal to keep the first switch tube 230 in the off state. Exemplarily, the first switch tube 230 can be an N-channel field effect tube, or other switch tubes that are in the off state when the gate is at a low level.

[0037] Furthermore, when the power supply terminal 102 is in the power-on state and an ESD event occurs, the power supply voltage will instantly reach tens of thousands of volts under the superposition of the electrostatic voltage to trigger the first switch tube 230 to turn on, thereby achieving the release of static electricity. The surge voltage is usually tens of volts or hundreds of volts, which cannot trigger the first switch tube 230 to turn on. Therefore, when the electrostatic discharge circuit 100 realizes electrostatic protection, it also has a strong surge resistance, which can avoid the problem of the electrostatic discharge circuit 100 being mistakenly triggered by the surge voltage, so as to ensure that the power supply voltage can supply power to the RF front-end module 400 normally.

[0038] The specific implementation of the electrostatic discharge circuit 100 is described below.

[0039] In this embodiment, the trigger module 10 may include a first resistor 120 and a capacitor 140, wherein the power supply terminal 102, the first resistor 120, the capacitor 140 and the ground terminal 104 are connected in series in sequence to form an RC trigger. Specifically, when the power supply terminal 102 is in a power-off state, the response time of the trigger module 10 is in the microsecond level. The "response time" here can also be understood as the time required for the capacitor 140 to complete charging (that is, the time required to reach a stable state after the voltage across the capacitor 140 changes), which is usually equivalent to approximately several time constants (for example, the response time can be equal to 5 time constants). Specifically, the time constant is equal to the product between the capacitance value of the capacitor 140 and the resistance value of the first resistor 120. Exemplarily, when the power supply terminal 102 is in a power-off state, the response time of the trigger module 10 can be 5 microseconds, 10 microseconds, 20 microseconds, 50 microseconds, etc. This embodiment does not limit the specific values ​​of the first resistor 120 and the capacitor 140.

[0040] In this embodiment, the discharge module 20 and the trigger module 10 can jointly form an electrostatic discharge circuit architecture to discharge the electrostatic current to the ground when the power supply end 102 is in a power-off state, thereby providing electrostatic protection to the RF front-end module 400 configured with the electrostatic discharge circuit 100. Specifically, the discharge module 20 can include a first inverter 210 and a first switch tube 230.

[0041] See also Figure 3 The first inverter 210 is connected between the trigger module 10 and the control terminal 2301 of the first switch tube 230, and is used to invert the level of the input signal and then output it, that is, to convert a high-level signal into a low-level signal, or to convert a low-level signal into a high-level signal. Specifically, the voltage value corresponding to the high-level signal can be determined according to the power supply voltage. In some possible embodiments, the voltage value corresponding to the high-level signal can be less than or equal to the power supply voltage. For example, when the power supply voltage is 5V, the voltage value corresponding to the high-level signal can be 4.5V, 4.8V, 5V, etc., and the voltage value corresponding to the low-level signal can be 0V. In addition, the first inverter 210 is also connected between the power supply terminal 102 and the ground terminal 104.

[0042] In this embodiment, the first inverter 210 may include a second switch tube 2120 and a third switch tube 2140. The first end 2121 of the second switch tube 2120 and the first end 2141 of the third switch tube 2140 are connected to form the output end 2103 of the first inverter 210, and the control end 2123 of the second switch tube 2120 and the control end 2143 of the third switch tube 2140 are connected to form the input end 2101 of the first inverter 210. The second end 2125 of the second switch tube 2120 is connected to the power supply end 102, and the second end 2145 of the third switch tube 2140 is connected to the ground end 104. Specifically, when the power supply end 102 is in the power-on state, the second switch tube 2120 is in the off state, and the third switch tube 2140 is in the on state, so that the control end 2301 of the first switch tube 230 is grounded.

[0043] As an implementation manner, the second switch tube 2120 is a P-channel field effect tube, the third switch tube 2140 is an N-channel field effect tube, the first end 2121 of the second switch tube 2120 and the first end 2141 of the third switch tube 2140 are drains, the second end 2125 of the second switch tube 2120 and the second end 2145 of the third switch tube 2140 are sources, and the control end 2123 of the second switch tube 2120 and the control end 2143 of the third switch tube 2140 are gates.

[0044] For example, in Figure 3In the illustrated embodiment, the second switch tube 2120 is a P-channel enhancement MOS tube, and the third switch tube 2140 is an N-channel enhancement MOS tube. In some other possible embodiments, the second switch tube 2120 may also be a switch tube having the same functional characteristics as the P-channel enhancement MOS tube. Specifically, the second switch tube 2120 is in a conducting state when the gate is at a low level. The third switch tube 2140 may also be a switch tube having the same functional characteristics as the N-channel enhancement MOS tube. Specifically, the third switch tube 2140 is in a conducting state when the gate is at a high level.

[0045] In this embodiment, the first switch tube 230 is connected between the power supply terminal 102 and the ground terminal 104, and is used to conduct the signal branch between the power supply terminal 102 and the ground terminal 104 to release the static electricity to the ground when static electricity is generated at the power supply terminal 102.

[0046] As an implementation mode, when the output terminal 2103 of the first inverter 210 outputs a high level signal, the first switch tube 230 is in a conducting state. Specifically, the first switch tube 230 is an N-channel field effect tube, the control terminal 2301 of the first switch tube 230 is a gate, the drain of the first switch tube 230 is connected to the power supply terminal 102, and the source of the first switch tube 230 is connected to the ground terminal 104. Figure 3 In the illustrated embodiment, the first switch tube 230 is an N-channel enhancement type MOS tube. In some other possible embodiments, the first switch tube 230 may also be a switch tube having the same functional characteristics as the N-channel enhancement type MOS tube. Specifically, the first switch tube 230 is in an on state when the gate is at a high level, and is in an off state when the gate is at a low level.

[0047] Here combined Figure 3 The corresponding electrostatic protection process is described when the power supply end 102 is in the power-off state. When static electricity appears at the power supply end 102, the duration of the static electricity (generally in nanoseconds) is much shorter than the response time of the trigger module 10. Due to the transient response characteristics of the capacitor 140, the voltage value at the input end 2101 of the first inverter 210 will not change suddenly, resulting in a relatively slow rise in the voltage there. At this time, the source voltage of the second switch tube 2120 is much greater than the gate voltage, and the second switch tube 2120 is in the on state, so that the output end 2103 of the first inverter 210 outputs a high-level signal. At this time, the gate voltage of the first switch tube 230 is much greater than the source voltage, and the first switch tube 230 is turned on to release the electrostatic current at the power supply end 102 to the ground, thereby providing electrostatic protection to the RF front-end module 400 equipped with the electrostatic release circuit 100.

[0048] It is not difficult to understand here that when the power supply end 102 is in the power-on state, once a surge voltage occurs, if the response time of the trigger module 10 is not shortened by the control module 30, then since the rise time of the surge voltage is also shorter than the response time of the trigger module 10, the surge voltage will also trigger the first switch tube 230 to turn on, thereby pulling the power supply voltage down to the ground, affecting the normal power supply of the RF front-end module 400.

[0049] In order to solve the above-mentioned problem of poor surge resistance, the inventor of the present application sets a control module 30 in the electrostatic discharge circuit 100. The control module 30 can short-circuit the first resistor 120, or / and disconnect the capacitor 140 when detecting that the power supply end 102 is in the power-on state, so as to shorten the response time of the trigger module 10. Specifically, when the power supply end 102 is in the power-on state, the response time of the trigger module 10 is in the nanosecond level or picosecond level. Exemplarily, the response time of the trigger module 10 can be 10 nanoseconds, 20 nanoseconds, 50 nanoseconds, 10 picoseconds, 20 picoseconds, 50 picoseconds, and the like. In this case, the surge voltage cannot trigger the RC trigger to turn on the first switch tube 230, so as to avoid the first switch tube 230 from being mis-conducted under the surge voltage.

[0050] It is not difficult to understand that when the power supply terminal 102 is in the power-on state, the gate of the first switch tube 230 is grounded, so that the first switch tube 230 becomes a gate-grounded NMOS tube (GGMOS tube). Figure 2 and Figure 3 It is not difficult to find that when the first resistor 120 is short-circuited, or / and the capacitor 140 is open-circuited, the power supply voltage can be input to the input terminal 2101 of the first inverter 210 almost instantly, so that the gate voltage of the third switch tube 2140 is much greater than the source voltage, and the third switch tube 2140 is in the on state, so that the gate of the first switch tube 230 is grounded. In this case, the gate of the first switch tube 230 is maintained at a low level state, so that the first switch tube 230 is in the off state.

[0051] Furthermore, when an ESD event occurs, the power supply voltage will instantly reach tens of thousands of volts under the superposition of the electrostatic voltage to trigger the GGMOS tube to turn on, thereby achieving the release of static electricity. However, the surge voltage is usually tens of volts or hundreds of volts, which cannot trigger the GGMOS tube to turn on. Therefore, when the power supply end 102 is in the power-on state, the electrostatic discharge circuit 100 has a strong surge resistance while achieving electrostatic protection, which can avoid the problem of the electrostatic discharge circuit 100 being mistakenly triggered by the surge voltage, so as to ensure that the power supply voltage can supply power to the RF front-end module 400 normally.

[0052] See also Figure 4, the first switch tube 230 in this embodiment can be integrated in the switch chip, for example, the switch chip can be a silicon on insulator (SOI) chip. Among them, the first switch tube 230 can include a substrate 2310, and the substrate 2310 is sequentially provided with a drain region 2320, a gate region 2325 and a source region 2330 in a specified direction X. Specifically, the substrate 2310 can be one of a silicon substrate, a silicon-on-insulator (SOI) substrate, a gallium arsenide (GaAs) substrate, and a silicon carbide (SiC) substrate. The drain region 2320 and the source region 2330 are roughly in the shape of long strips, which can be formed by implanting ions into the substrate 2310 through a doping process.

[0053] In this embodiment, the size of the drain region 2320 in the specified direction X is greater than the size of the source region 2330 in the specified direction X. Specifically, when preparing the first switch tube 230, the drain region 2320 is "widened" so that a part of the structure of the drain region 2320 can be equivalent to a small resistor, so as to reduce the internal current of the first switch tube 230 and ensure its uniformity.

[0054] In some possible embodiments, the first switch tube 230 may further include a metal silicide layer 2340 and a silicide blocking layer 2350, wherein the metal silicide layer 2340 is disposed on the surface of the drain region 2320 and the source region 2330 to respectively realize electrical connection between the drain region 2320 and the source region 2330 and the conductive metal wire. The silicide blocking layer 2350 (Salicideblock, SAB) is disposed between the drain region 2320 and the metal silicide layer 2340, wherein the silicide blocking layer 2350 may be a silicon dioxide layer deposited by a plasma enhanced chemical vapor deposition (PECVD) process, which is used to cover the substrate silicon and polysilicon on which the metal silicide (Salicide) is not required to be formed, so as to avoid the formation of the metal silicide (Salicide).

[0055] Therefore, when the power supply end 102 is in the power-on state, the first switch tube 230 can be regarded as a GGMOS tube, and the GGMOS tube can only be turned on when the drain voltage is very high. Therefore, when the power supply voltage surges, the surge voltage cannot turn on the GGMOS tube to improve the surge resistance of the electrostatic discharge circuit 100. The electrostatic voltage is usually thousands of volts, so that the electrostatic voltage can turn on the GGMOS tube, thereby achieving a protective effect against static electricity.

[0056] The specific implementation of the control module 30 is introduced below.

[0057] In this embodiment, the control module 30 may include a detection unit 320 and a control unit 340, the detection unit 320 is connected between the power supply terminal 102 and the ground terminal 104, and the control unit 340 is electrically connected to the detection unit 320 and the trigger module 10. The detection unit 320 is used to output a detection signal when the power supply terminal 102 is in a power-on state, and the control unit 340 is used to control the first resistor 120 to be in a short-circuit state, or / and, control the capacitor 140 to be in an open-circuit state when receiving the detection signal.

[0058] In some possible embodiments, the control unit 340 is configured to control the first resistor 120 to be in a short-circuit state when receiving the detection signal. Figure 5 , the control unit 340 may include a fourth switch tube 3410, and the fourth switch tube 3410 is connected in parallel with the first resistor 120. The detection unit 320 is electrically connected to the control end 3412 of the fourth switch tube 3410, and the detection unit 320 is used to control the fourth switch tube 3410 to be in a conductive state when the power supply end 102 is in a powered-on state, so that the first resistor 120 is in a short-circuit state. At this time, the response time of the trigger module 10 is in the nanosecond level. Exemplarily, the response time of the trigger module 10 can be 10 nanoseconds, 20 nanoseconds, or 50 nanoseconds.

[0059] As an implementation, the fourth switch tube 3410 can be a P-channel field effect tube, the control terminal 3412 of the fourth switch tube 3410 is a gate, the source of the fourth switch tube 3410 is connected to the power supply terminal 102, and the drain of the fourth switch tube 3410 is connected to the common end of the first resistor 120 and the capacitor 140, that is, the connection node of the first resistor 120 and the capacitor 140. The detection unit 320 is used to output a low-level signal to the control terminal 3412 of the fourth switch tube 3410 when the power supply terminal 102 is in the power-on state, so as to control the fourth switch tube 3410 to be turned on. Figure 5 In the illustrated embodiment, the fourth switch tube 3410 is a P-channel enhancement type MOS tube. In other alternative implementations, the fourth switch tube 3410 may also be a switch tube having the same functional characteristics as the P-channel enhancement type MOS tube. Specifically, the fourth switch tube 3410 is in a conducting state when the gate is at a low level. This embodiment does not limit the specific implementation of the fourth switch tube 3410.

[0060] In some other possible embodiments, the control unit 340 is used to control the capacitor 140 to be in an open circuit state when receiving the detection signal. Figure 6, the control unit 340 may include a fifth switch tube 3430, and the fifth switch tube 3430 is connected in series with the capacitor 140. Specifically, the fifth switch tube 3430 is connected in series with the capacitor 140 to form a series branch, one end of the series branch is connected to the first resistor 120, and the other end of the series branch is connected to the ground terminal 104. The detection unit 320 is electrically connected to the control end 3432 of the fifth switch tube 3430, and the detection unit 320 is used to control the fifth switch tube 3430 to be in a cut-off state when the power supply end 102 is in a power-on state, so that the capacitor 140 is in an open circuit state. At this time, the response time of the trigger module 10 is in the nanosecond level. Exemplarily, the response time of the trigger module 10 can be 10 nanoseconds, 20 nanoseconds, or 50 nanoseconds.

[0061] As an implementation, the fifth switch tube 3430 can be an N-channel field effect tube, the control terminal 3432 of the fifth switch tube 3430 is a gate, the source of the fifth switch tube 3430 is connected to the ground terminal 104, and the drain of the fifth switch tube 3430 is connected to the other end of the capacitor 140, so that the capacitor 140 is connected to the ground terminal 104 through the fifth switch tube 3430. The detection unit 320 is used to output a low-level signal to the control terminal 3432 of the fifth switch tube 3430 when the power supply terminal 102 is in the power-on state, so as to control the fifth switch tube 3430 to be in the off state. Figure 6 In the illustrated embodiment, the fifth switch transistor 3430 is an N-channel enhancement type MOS transistor. In other alternative implementations, the fifth switch transistor 3430 may also be a switch transistor having the same functional characteristics as the N-channel enhancement type MOS transistor. Specifically, Figure 6 The fifth switch tube 3430 in the embodiment will be in the cut-off state when the gate is at a low level.

[0062] As another implementation, see Figure 7 The fifth switch tube 3430 can be a P-channel field effect tube, the control terminal 3432 of the fifth switch tube 3430 is a gate, the source of the fifth switch tube 3430 is connected to one end of the first resistor 120, and the drain of the fifth switch tube 3430 is connected to one end of the capacitor 140, that is, the fifth switch tube 3430 is connected in series between the first resistor 120 and the capacitor 140, so that the capacitor 140 is connected to the input terminal 2101 of the first inverter 210 through the fifth switch tube 3430. The detection unit 320 is used to output a high-level signal to the control terminal 3432 of the fifth switch tube 3430 when the power supply terminal 102 is in a power-on state, so as to control the fifth switch tube 3430 to be in a cut-off state, thereby cutting off the connection between the capacitor 140 and the first resistor 120 and the power supply terminal 102, that is, adjusting the capacitor 140 to an open circuit state. Figure 7In the illustrated embodiment, the fifth switch tube 3430 is a P-channel enhancement type MOS tube. In other alternative implementations, the fifth switch tube 3430 may also be a switch tube having the same functional characteristics as the P-channel enhancement type MOS tube. Specifically, Figure 7 The fifth switch tube 3430 in the embodiment will be in the cut-off state when the gate is at a high level. This embodiment does not limit the specific implementation method of the fifth switch tube 3430.

[0063] In some other possible embodiments, the control unit 340 is configured to control the first resistor 120 to be in a short-circuit state and the capacitor 140 to be in an open-circuit state when receiving the detection signal. Figure 8 , the control unit 340 may include a fourth switch tube 3410 and a fifth switch tube 3430, the fourth switch tube 3410 is connected in parallel with the first resistor 120, and the fifth switch tube 3430 is connected in series with the capacitor 140. Specifically, the fifth switch tube 3430 is connected in series with the capacitor 140 to form a series branch, one end of the series branch is connected to the first resistor 120, and the other end of the series branch is connected to the ground terminal 104. The detection unit 320 is electrically connected to the control end 3412 of the fourth switch tube 3410, and the detection unit 320 is used to control the fourth switch tube 3410 to be in a conducting state when the power supply terminal 102 is in a powered-on state, so that the first resistor 120 is in a short-circuit state. The detection unit 320 is electrically connected to the control end 3432 of the fifth switch tube 3430, and the detection unit 320 is used to control the fifth switch tube 3430 to be in a cut-off state when the power supply terminal 102 is in a powered-on state, so that the capacitor 140 is in a disconnected state. At this time, the response time of the trigger module 10 is in the picosecond level. For example, the response time of the trigger module 10 can be 10 picoseconds, 20 picoseconds, or 50 picoseconds.

[0064] In this embodiment, the control unit 340 not only sets a fourth switch tube 3410 for short-circuiting the first resistor 120, but also sets a fifth switch tube 3430 for disconnecting the capacitor 140, which can further shorten the response time of the trigger module 10 and ensure that when one of the fourth switch tube 3410 and the fifth switch tube 3430 fails, the control unit 340 can still adjust the connection relationship between the capacitor 140 and the first resistor 120 to shorten the response time of the trigger module 10 and improve the working reliability of the electrostatic release circuit 100.

[0065] As an implementation, the fourth switch tube 3410 may be a P-channel field effect tube, the control terminal 3412 of the fourth switch tube 3410 is a gate, the source of the fourth switch tube 3410 is connected to the power supply terminal 102, and the drain of the fourth switch tube 3410 is connected to the common end of the first resistor 120 and the capacitor 140, that is, the connection node between the first resistor 120 and the capacitor 140. The fifth switch tube 3430 may be an N-channel field effect tube, the control terminal 3432 of the fifth switch tube 3430 is a gate, the source of the fifth switch tube 3430 is connected to the ground terminal 104, and the drain of the fifth switch tube 3430 is connected to the other end of the capacitor 140, so that the capacitor 140 is connected to the ground terminal 104 through the fifth switch tube 3430. The detection unit 320 is used to output low-level signals to the control terminal 3412 of the fourth switch tube 3410 and the control terminal 3432 of the fifth switch tube 3430 respectively when the power supply terminal 102 is in the power-on state, so as to control the fourth switch tube 3410 to be in the on state and control the fifth switch tube 3430 to be in the off state. Figure 8 In the illustrated embodiment, the fourth switch 3410 is a P-channel enhancement MOS transistor, and the fifth switch 3430 is an N-channel enhancement MOS transistor. In other alternative embodiments, the fourth switch 3410 may also be a switch having the same functional characteristics as the P-channel enhancement MOS transistor. Specifically, the fourth switch 3410 will be in a conducting state when the gate is at a low level. The fifth switch 3430 may also be a switch having the same functional characteristics as the N-channel enhancement MOS transistor. Specifically, Figure 8 The fifth switch tube 3430 in the embodiment will be in the cut-off state when the gate is at a low level.

[0066] As another implementation, see Fig. 9The fourth switch tube 3410 may be a P-channel field effect tube, the control terminal 3412 of the fourth switch tube 3410 is a gate, the source of the fourth switch tube 3410 is connected to the power supply terminal 102, and the drain of the fourth switch tube 3410 is connected to the common terminal of the first resistor 120 and the capacitor 140, that is, the connection node of the first resistor 120 and the capacitor 140. The fifth switch tube 3430 may be a P-channel field effect tube, the control terminal 3432 of the fifth switch tube 3430 is a gate, the source of the fifth switch tube 3430 is connected to one end of the first resistor 120, and the drain of the fifth switch tube 3430 is connected to one end of the capacitor 140, that is, the fifth switch tube 3430 is connected in series between the first resistor 120 and the capacitor 140, so that the capacitor 140 is connected to the input terminal 2101 of the first inverter 210 through the fifth switch tube 3430. The detection unit 320 is used to output a low-level signal to the control terminal 3412 of the fourth switch tube 3410 and a high-level signal to the control terminal 3432 of the fifth switch tube 3430 when the power supply terminal 102 is in the power-on state, so as to control the fourth switch tube 3410 to be in the on state and the fifth switch tube 3430 to be in the off state, thereby cutting off the connection between the capacitor 140 and the first resistor 120 and the power supply terminal 102, that is, adjusting the capacitor 140 to the off-circuit state. Fig. 9 In the illustrated embodiment, the fourth switch transistor 3410 and the fifth switch transistor 3430 are both P-channel enhancement type MOS transistors. In other alternative implementations, the fourth switch transistor 3410 and the fifth switch transistor 3430 may also be switch transistors having the same functional characteristics as the P-channel enhancement type MOS transistor. Specifically, Fig. 9 The fourth switch tube 3410 in the embodiment will be in the on state when the gate is at a low level. Fig. 9 The fifth switch tube 3430 in the embodiment will be in the cut-off state when the gate is at a low level.

[0067] In this embodiment, the detection unit 320 is used to detect whether the power supply end 102 is in a powered-on state, and when the power supply end 102 is in a powered-on state, output a detection signal to control the control unit 340 to put the first resistor 120 in a short-circuit state, or / and put the capacitor 140 in an open-circuit state. Optionally, the detection signal can be a high-level signal or a low-level signal.

[0068] For example, the control unit 340 adopts Figure 5 In the case of the implementation shown in FIG. 1 , the detection signal output by the detection unit 320 is a low level signal; for example, when the control unit 340 adopts Figure 6 In the case of the implementation shown in FIG. 1 , the detection signal output by the detection unit 320 is a low level signal; for example, when the control unit 340 adopts Figure 7In the case of the implementation shown in FIG. 1 , the detection signal output by the detection unit 320 is a high level signal; for example, when the control unit 340 adopts Figure 8 In the case of the implementation shown in FIG. 1 , the detection signal output by the detection unit 320 is a low-level signal; for example, when the control unit 340 adopts Fig. 9 In the illustrated implementation, the detection unit 320 outputs two detection signals, one of which is a high-level signal and the other is a low-level signal.

[0069] As an implementation, see Fig.10 , the detection unit 320 may include a voltage dividing unit 3210, a voltage comparator 3230, and a second inverter 3250. The voltage dividing unit 3210 is connected between the power supply terminal 102 and the ground terminal 104, and is used to divide the power supply voltage to prevent the amplitude of the power supply voltage from being too large, which causes the voltage to exceed the input voltage range of the voltage comparator 3230, or even damage the voltage comparator 3230. Specifically, the voltage dividing unit 3210 may include a second resistor 3212 and a third resistor 3214, and the second resistor 3212 and the third resistor 3214 are connected in series between the power supply terminal 102 and the ground terminal 104. This embodiment does not limit the specific values ​​of the second resistor 3212 and the third resistor 3214.

[0070] The first input terminal 3232 of the voltage comparator 3230 is connected to the voltage dividing unit 3210. Specifically, the first input terminal 3232 of the voltage comparator 3230 is connected to the common terminal of the second resistor 3212 and the third resistor 3214. The second input terminal 3234 of the voltage comparator 3230 is used to input the reference voltage VREF. The output terminal 3236 of the voltage comparator 3230 is connected to the input terminal 3252 of the second inverter 3250. The output terminal 3254 of the second inverter 3250 is electrically connected to the control unit 340.

[0071] Specifically, the voltage comparator 3230 is used to output a comparison signal when the voltage input at the first input terminal 3232 is greater than the reference voltage VREF. The second inverter 3250 is used to invert the comparison signal to form a detection signal. Among them, the first input terminal 3232 can be the non-inverting input terminal of the voltage comparator 3230, the second input terminal 3234 can be the inverting input terminal of the voltage comparator 3230, and the reference voltage VREF can be determined by the R&D personnel based on the actual working conditions of the detection unit 320. For example, the reference voltage VREF can be 0.5V, 0.8V, 1V, etc. Specifically, after the power supply terminal 102 is powered on, the voltage at the common terminal of the second resistor 3212 and the third resistor 3214 (that is, the voltage at the first input terminal 3232 of the voltage comparator 3230) is greater than the reference voltage VREF.

[0072] exist Fig.10 In the illustrated embodiment, the second inverter 3250 may include a sixth switch tube 3270 and a seventh switch tube 3290. The first end 3271 of the sixth switch tube 3270 and the first end 3291 of the seventh switch tube 3290 are connected to form an output end 3254 of the second inverter 3250, and the control end 3273 of the sixth switch tube 3270 and the control end 3293 of the seventh switch tube 3290 are connected to form an input end 3252 of the second inverter 3250. The second end 2125 of the sixth switch tube 3270 is connected to the power supply end 102, and the second end 3295 of the seventh switch tube 3290 is connected to the ground end 104.

[0073] As an implementation manner, the sixth switch tube 3270 is a P-channel field effect tube, the seventh switch tube 3290 is an N-channel field effect tube, the first end 3271 of the sixth switch tube 3270 and the first end 3291 of the seventh switch tube 3290 are drains, the second end 3275 of the sixth switch tube 3270 and the second end 3295 of the seventh switch tube 3290 are sources, and the control end 3273 of the sixth switch tube 3270 and the control end 3293 of the seventh switch tube 3290 are gates. Specifically, Fig.10 In the illustrated embodiment, the sixth switch tube 3270 is a P-channel enhancement mode MOS tube, and the seventh switch tube 3290 is an N-channel enhancement mode MOS tube.

[0074] In some possible embodiments, when the voltage at the first input terminal 3232 is greater than the reference voltage VREF, the comparison signal output by the voltage comparator 3230 may be a high-level signal, which is inverted by the second inverter 3250 and becomes a low-level signal. Therefore, when the output terminal 3254 of the second inverter 3250 outputs a low-level signal, the output terminal 3254 of the second inverter 3250 may be connected to the reference voltage VREF. Figure 5 The output terminal 3254 of the second inverter 3250 can also be connected to the control terminal 3412 of the fourth switch tube 3410 to make the fourth switch tube 3410 in the on state. Figure 6 The output terminal 3254 of the second inverter 3250 can also be connected to the control terminal 3432 of the fifth switch tube 3430 to make the fifth switch tube 3430 in the cut-off state. Figure 8 The control end 3412 of the fourth switch tube 3410 and the control end 3432 of the fifth switch tube 3430 are respectively connected, so that the fourth switch tube 3410 is in a conducting state and the fifth switch tube 3430 is in a cut-off state.

[0075] In addition, when the voltage at the first input terminal 3232 is greater than the reference voltage VREF, the output terminal 3232 of the voltage comparator 3230 may generate a high level signal. In this case, the output terminal 3232 of the voltage comparator 3230 may be connected to the reference voltage VREF. Figure 7 The output terminal 3232 of the voltage comparator 3230 can also be connected to the control terminal 3432 of the fifth switch tube 3430 to make the fifth switch tube 3430 in the cut-off state. Fig. 9 The control terminal 3432 of the fifth switch tube 3430 is connected to the output terminal 3254 of the second inverter 3250. Fig. 9 In this case, the detection unit 320 can generate a high-level signal and a low-level signal to turn on the fourth switch tube 3410 and turn off the fifth switch tube 3430.

[0076] It is not difficult to find here that Figure 7 In the embodiment shown, the detection unit 320 only needs to generate a high-level signal to turn off the fifth switch tube 3430. Fig.11 The detection unit 320 may include a voltage dividing unit 3210 and a voltage comparator 3230 , and the voltage dividing unit 3210 is connected between the power supply terminal 102 and the ground terminal 104 .

[0077] The first input terminal 3232 of the voltage comparator 3230 is connected to the voltage dividing unit 3210, the second input terminal 3234 of the voltage comparator 3230 is used to input the reference voltage VREF, and the output terminal 3236 of the voltage comparator 3230 is electrically connected to the control unit 340. The voltage comparator 3230 is used to output a detection signal when the voltage input at the first input terminal 3232 is greater than the reference voltage VREF. Therefore, when the voltage comparator 3230 can directly output a high level signal, the output terminal 3236 of the voltage comparator 3230 can be directly connected to the control unit 340. Figure 7 In this case, the detection unit 320 does not need to be provided with a second inverter 3250, thereby reducing the hardware cost of the detection unit 320.

[0078] Of course, in some other possible embodiments, the output terminal 3236 of the voltage comparator 3230 may also output a low-level signal. In this case, the researchers can flexibly set the second inverter 3250 according to the turn-on voltage required by the fourth switch tube 3410 and / or the fifth switch tube 3430. This embodiment does not limit whether the detection unit 320 includes an inverter and the number of inverters included.

[0079] The embodiment of the present application provides an electrostatic discharge circuit 100 and a radio frequency front-end module 400 equipped with the electrostatic discharge circuit 100, wherein the electrostatic discharge circuit 100 may include a trigger module 10, a discharge module 20 and a control module 30. The trigger module 10 may include a first resistor 120 and a capacitor 140, one end of the first resistor 120 is connected to one end of the capacitor 140, the other end of the first resistor 120 is connected to the power supply terminal 102, and the other end of the capacitor 140 is connected to the ground terminal 104. The discharge module 20 may include a first inverter 210 and a first switch tube 230, the first switch tube 230 is connected between the power supply terminal 102 and the ground terminal 104; the input terminal 2101 of the first inverter 210 is connected to the common terminal of the first resistor 120 and the capacitor 140, and the output terminal 2103 of the first inverter 210 is connected to the control terminal 2301 of the first switch tube 230. The control module 30 may include a detection unit 320 and a control unit 340, the detection unit 320 is connected between the power supply end 102 and the ground end 104, and the control unit 340 is electrically connected to the detection unit 320 and the trigger module 10 respectively; the detection unit 320 is used to output a detection signal when the power supply end 102 is in a power-on state, and the control unit 340 is used to control the first resistor 120 to be in a short-circuit state, or / and, control the capacitor 140 to be in an open-circuit state when receiving the detection signal.

[0080] When the power supply terminal 102 is in a power-off state (i.e., no power supply voltage is input), the first resistor 120 and the capacitor 140 are connected in series between the power supply terminal 102 and the ground terminal 104 to form an RC trigger. The RC trigger and the discharge module 20 can jointly form an electrostatic release circuit architecture to release the electrostatic current to the ground, thereby providing electrostatic protection to the RF front-end module 400 configured with the electrostatic release circuit 100.

[0081] When the power supply end 102 is in the power-on state (i.e., inputting the power supply voltage), it indicates that the RF front-end module 400 equipped with the electrostatic discharge circuit 100 is in the power supply state. At this time, the control unit 340 will receive the detection signal output by the detection unit 320, and then control the first resistor 120 to be in the short-circuit state, or / and control the capacitor 140 to be in the open-circuit state. In other words, the first resistor 120 and the capacitor 140 cannot form an RC trigger, and thus the situation that the surge voltage in the power supply voltage misleads to turn on the first switch tube 230 can be avoided, so as to improve the surge resistance of the electrostatic discharge circuit 100.

[0082] Specifically, when the first resistor 120 is in a short-circuit state, or / and the capacitor 140 is in an open-circuit state, the response time of the trigger module 10 is in the nanosecond level, or even in the picosecond level. At this time, the surge voltage cannot trigger the RC trigger to turn on the first switch tube 230. In addition, since the power supply voltage (that is, the high-level signal) is input to the input terminal 2101 of the first inverter 210, the output terminal 2103 of the first inverter 210 will output a low-level signal to keep the first switch tube 230 in the off state. Exemplarily, the first switch tube 230 can be an N-channel field effect tube, or other switch tubes that are in the off state when the gate is at a low level.

[0083] Furthermore, when the power supply terminal 102 is in the power-on state and an ESD event occurs, the power supply voltage will instantly reach tens of thousands of volts under the superposition of the electrostatic voltage to trigger the first switch tube 230 to turn on, thereby achieving the release of static electricity. The surge voltage is usually tens of volts or hundreds of volts, which cannot trigger the first switch tube 230 to turn on. Therefore, when the electrostatic discharge circuit 100 realizes electrostatic protection, it also has a strong surge resistance, which can avoid the problem of the electrostatic discharge circuit 100 being mistakenly triggered by the surge voltage, so as to ensure that the power supply voltage can supply power to the RF front-end module 400 normally.

[0084] The embodiment of the present application also provides an electrostatic discharge circuit 100, which may include a trigger module 10, a discharge module 20 and a control module 30. The trigger module 10 may include a first resistor 120 and a capacitor 140, one end of the first resistor 120 is connected to one end of the capacitor 140, the other end of the first resistor 120 is connected to the power supply terminal 102, and the other end of the capacitor 140 is connected to the ground terminal 104. The discharge module 20 may include a first inverter 210 and a first switch tube 230, the first switch tube 230 is connected between the power supply terminal 102 and the ground terminal 104; the input terminal 2101 of the first inverter 210 is connected to the common terminal of the first resistor 120 and the capacitor 140, and the output terminal 2103 of the first inverter 210 is connected to the control terminal 2301 of the first switch tube 230. The control module 30 may include a detection unit 320 and a control unit 340, wherein the detection unit 320 is connected between the power supply terminal 102 and the ground terminal 104, and the control unit 340 is electrically connected to the detection unit 320 and the trigger module 10 respectively; the detection unit 320 is used to output a detection signal when the power supply terminal 102 is in a power-on state, and the control unit 340 is used to adjust the connection state of the capacitor 140 and / or the first resistor 120 when receiving the detection signal, so as to shorten the response time of the trigger module 10. Specifically, by adjusting the connection state of the capacitor 140 and / or the first resistor 120, the response time of the trigger module 10 is made shorter than the rise time of the power surge.

[0085] As an embodiment, the control unit 340 is used to adjust the connection state of the first resistor 120 to a short-circuit state when receiving a detection signal, so as to shorten the response time of the trigger module 10 to the nanosecond level. As another embodiment, the control unit 340 is used to adjust the connection state of the capacitor 140 to an open-circuit state when receiving a detection signal, so as to shorten the response time of the trigger module 10 to the nanosecond level. As another embodiment, the control unit 340 is used to adjust the connection state of the first resistor 120 to a short-circuit state and the connection state of the capacitor 140 to an open-circuit state when receiving a detection signal, so as to shorten the response time of the trigger module 10 to the picosecond level.

[0086] In addition, the control unit 340 is also used to maintain the first resistor 120 and the capacitor 140 connected in series between the power supply terminal 102 and the ground terminal 104 in sequence when no detection signal is received, so that the response time of the trigger module 10 is in the microsecond level. In this case, the first resistor 120 and the capacitor 140 can form an RC trigger so that the response time of the trigger module 10 is greater than the duration of the ESD voltage.

[0087] An embodiment of the present application provides an electrostatic release circuit 100. When the power supply terminal 102 is in a power-off state, a first resistor 120 and a capacitor 140 are connected in series between the power supply terminal 102 and the ground terminal 104 to form an RC trigger. The RC trigger and the discharge module 20 can jointly form an electrostatic release circuit architecture to release the electrostatic current to the ground, thereby providing electrostatic protection to the RF front-end module configured with the electrostatic release circuit 100.

[0088] When the power supply end 102 is in the power-on state, it means that the RF front-end module equipped with the electrostatic discharge circuit 100 is in the power supply state. At this time, the control unit 340 will receive the detection signal output by the detection unit 320, and adjust the connection relationship between the capacitor 140 and the first resistor 120, for example, the first resistor 120 is controlled to be in a short-circuit state, or / and, the capacitor 140 is controlled to be in an open-circuit state. In other words, the first resistor 120 and the capacitor 140 cannot form an RC trigger, thereby preventing the surge voltage in the power supply voltage from misleadingly turning on the first switch tube 230, so as to improve the surge resistance of the electrostatic discharge circuit 100.

[0089] Specifically, the shortened response time of the trigger module 10 is in the nanosecond level, or even in the picosecond level, at which time the surge voltage cannot trigger the RC trigger to turn on the first switch tube 230. In addition, since the power supply voltage (i.e., a high-level signal) is input to the input terminal 2101 of the first inverter 210, the output terminal 2103 of the first inverter 210 outputs a low-level signal to keep the first switch tube 230 in the off state. Exemplarily, the first switch tube 230 can be an N-channel field effect tube, or other switch tubes that are in the off state when the gate is at a low level.

[0090] Furthermore, when the power supply terminal 102 is in the power-on state and an ESD event occurs, the power supply voltage will instantly reach tens of thousands of volts to trigger the first switch tube 230 to turn on, thereby achieving the release of static electricity. However, the surge voltage is usually tens of volts or hundreds of volts, which cannot trigger the first switch tube 230 to turn on. Therefore, when the electrostatic discharge circuit 100 realizes electrostatic protection, it also has a strong surge resistance, which can avoid the problem of the electrostatic discharge circuit 100 being mistakenly triggered by the surge voltage, so as to ensure that the power supply voltage can normally supply power to the RF front-end module.

[0091] In some possible embodiments, when the power supply end 102 is in a powered-on state, the response time of the trigger module 10 is in nanoseconds or picoseconds; when the power supply end 102 is in a powered-off state, the response time of the trigger module 10 is in microseconds.

[0092] In some possible embodiments, the first switch tube 230 is an N-channel field effect tube, the control end 2301 of the first switch tube 230 is a gate, the drain of the first switch tube 230 is connected to the power supply end 102, and the source of the first switch tube 230 is connected to the ground end 104; when the power supply end 102 is in a power-on state, the gate of the first switch tube 230 is grounded.

[0093] In some possible embodiments, the first switch tube 230 may include a substrate 2310 , on which a drain region 2320 and a source region 2330 are sequentially arranged in a specified direction X, and a size of the drain region 2320 in the specified direction X is larger than a size of the source region 2330 in the specified direction X.

[0094] Specifically, the relevant descriptions of the trigger module 10, the discharge module 20 and the control module 30 can refer to the relevant descriptions in the above embodiments. In the absence of conflict, the relevant features of the trigger module 10, the discharge module 20 and the control module 30 in the above embodiments can be combined with this embodiment, and in order to save space, they will not be repeated here one by one.

[0095] In the specification of this application, certain words are used to refer to specific components in the specification and claims. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. The specification and claims do not use the difference in name as a way to distinguish components, but use the difference in function of the components as the criterion for distinction. For example, "including" mentioned throughout the specification and claims is an open term, so it should be interpreted as "including but not limited to"; "substantially" means that those skilled in the art can solve technical problems within a certain error range and basically achieve technical effects.

[0096] In the description of the present application, it should be understood that terms such as "upper", "lower", "front", "back", "left", "right", and "inside" indicating directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings, and are merely simplified descriptions for the convenience of describing the present application. They do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore should not be understood as a limitation on the present application.

[0097] In this application, unless otherwise clearly specified or limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, it can be internal communication between two elements, or it can be only surface contact. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0098] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0099] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0100] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. An electrostatic discharge circuit, characterized in that: A power supply terminal and a ground terminal are provided, and the electrostatic discharge circuit comprises: A trigger module, comprising a first resistor and a capacitor, wherein one end of the first resistor is connected to one end of the capacitor, the other end of the first resistor is connected to the power supply end, and the other end of the capacitor is connected to the ground end; A discharge module, comprising a first inverter and a first switch tube, wherein the first switch tube is connected between the power supply end and the ground end; an input end of the first inverter is connected to a common end of the first resistor and the capacitor, and an output end of the first inverter is connected to a control end of the first switch tube; and The control module includes a detection unit and a control unit, wherein the detection unit is connected between the power supply end and the ground end, and the control unit is electrically connected to the detection unit and the trigger module respectively; the detection unit is used to output a detection signal when the power supply end is in a power-on state, and the control unit is used to control the first resistor to be in a short-circuit state, or / and control the capacitor to be in an open-circuit state when receiving the detection signal.

2. The electrostatic discharge circuit according to claim 1, characterized in that: When the power supply end is in a powered-on state, the response time of the trigger module is in nanoseconds or picoseconds; When the power supply end is in a power-off state, the response time of the trigger module is in microseconds.

3. The electrostatic discharge circuit according to claim 1, characterized in that: The first switch tube is an N-channel field effect tube, the control end of the first switch tube is a gate, the drain of the first switch tube is connected to the power supply end, and the source of the first switch tube is connected to the ground end; When the power supply end is in a powered-on state, the gate of the first switch tube is grounded.

4. The electrostatic discharge circuit according to claim 1, characterized in that: The first inverter comprises a second switch tube and a third switch tube, wherein a first end of the second switch tube is connected to a first end of the third switch tube to form an output end of the first inverter; a control end of the second switch tube is connected to a control end of the third switch tube to form an input end of the first inverter; a second end of the second switch tube is connected to the power supply end, and a second end of the third switch tube is connected to the ground end; When the power supply end is in a powered-on state, the second switch tube is in a cut-off state, and the third switch tube is in a conducting state, so that the control end of the first switch tube is grounded.

5. The electrostatic discharge circuit according to claim 4, characterized in that: The second switch tube is a P-channel field effect tube, the third switch tube is an N-channel field effect tube, the first end of the second switch tube and the first end of the third switch tube are drains, the second end of the second switch tube and the second end of the third switch tube are sources, and the control end of the second switch tube and the control end of the third switch tube are gates.

6. The electrostatic discharge circuit according to any one of claims 1 to 5, characterized in that: The control unit includes a fourth switch tube, and the fourth switch tube is connected in parallel with the first resistor; The detection unit is electrically connected to the control end of the fourth switch tube, and is used for controlling the fourth switch tube to be in a conducting state when the power supply end is in a powered-on state, so as to put the first resistor in a short-circuit state.

7. The electrostatic discharge circuit according to claim 6, characterized in that: The fourth switch tube is a P-channel field effect tube, the control end of the fourth switch tube is a gate, the source of the fourth switch tube is connected to the power supply end, and the drain of the fourth switch tube is connected to the common end of the first resistor and the capacitor; The detection unit is used for outputting a low level signal to the control end of the fourth switch tube when the power supply end is in a power-on state, so as to control the fourth switch tube to be in a conducting state.

8. The electrostatic discharge circuit according to any one of claims 1 to 5, characterized in that: The control unit includes a fifth switch tube, and the fifth switch tube is connected in series with the capacitor; The detection unit is electrically connected to the control end of the fifth switch tube, and is used for controlling the fifth switch tube to be in a cut-off state when the power supply end is in a power-on state, so as to put the capacitor in an open-circuit state.

9. The electrostatic discharge circuit according to claim 8, characterized in that: The fifth switch tube is an N-channel field effect tube, the control end of the fifth switch tube is a gate, the source of the fifth switch tube is connected to the ground end, and the drain of the fifth switch tube is connected to the other end of the capacitor; The detection unit is used for outputting a low level signal to the control end of the fifth switch tube when the power supply end is in a power-on state, so as to control the fifth switch tube to be in a cut-off state.

10. The electrostatic discharge circuit according to claim 8, characterized in that: The fifth switch tube is a P-channel field effect tube, the control end of the fifth switch tube is a gate, the source of the fifth switch tube is connected to one end of the first resistor, and the drain of the fifth switch tube is connected to one end of the capacitor, so that the capacitor is connected to the input end of the first inverter through the fifth switch tube; The detection unit is used for outputting a high level signal to the control end of the fifth switch tube when the power supply end is in a power-on state, so as to control the fifth switch tube to be in a cut-off state.

11. The electrostatic discharge circuit according to any one of claims 1 to 5, characterized in that: The control unit includes a fourth switch tube and a fifth switch tube, the fourth switch tube is connected in parallel with the first resistor, and the fifth switch tube is connected in series with the capacitor; The detection unit is electrically connected to the control end of the fourth switch tube, and the detection unit is used to control the fourth switch tube to be in a conducting state when the power supply end is in a powered-on state, so as to put the first resistor in a short-circuit state; The detection unit is electrically connected to the control end of the fifth switch tube, and is used for controlling the fifth switch tube to be in a cut-off state when the power supply end is in a power-on state, so as to put the capacitor in an open-circuit state.

12. The electrostatic discharge circuit according to claim 11, characterized in that: The fourth switch tube is a P-channel field effect tube, the control end of the fourth switch tube is a gate, the source of the fourth switch tube is connected to the power supply end, and the drain of the fourth switch tube is connected to the common end of the first resistor and the capacitor; The fifth switch tube is an N-channel field effect tube, the control end of the fifth switch tube is a gate, the source of the fifth switch tube is connected to the ground end, and the drain of the fifth switch tube is connected to the other end of the capacitor; The detection unit is used to output low-level signals to the control end of the fourth switch tube and the control end of the fifth switch tube respectively when the power supply end is in the power-on state, so as to control the fourth switch tube to be in the on state and control the fifth switch tube to be in the off state.

13. The electrostatic discharge circuit according to claim 11, characterized in that: The fourth switch tube is a P-channel field effect tube, the control end of the fourth switch tube is a gate, the source of the fourth switch tube is connected to the power supply end, and the drain of the fourth switch tube is connected to the common end of the first resistor and the capacitor; The fifth switch tube is a P-channel field effect tube, the control end of the fifth switch tube is a gate, the source of the fifth switch tube is connected to one end of the first resistor, and the drain of the fifth switch tube is connected to one end of the capacitor, so that the capacitor is connected to the input end of the first inverter through the fifth switch tube; The detection unit is used to output a low-level signal to the control end of the fourth switch tube and a high-level signal to the control end of the fifth switch tube when the power supply end is in a power-on state, so as to control the fourth switch tube to be in an on state and control the fifth switch tube to be in an off state.

14. The electrostatic discharge circuit according to any one of claims 1 to 5, characterized in that: The detection unit includes a voltage dividing unit, a voltage comparator and a second inverter; the voltage dividing unit is connected between the power supply terminal and the ground terminal; The first input terminal of the voltage comparator is connected to the voltage dividing unit, the second input terminal of the voltage comparator is used to input a reference voltage, the output terminal of the voltage comparator is connected to the input terminal of the second inverter, and the output terminal of the second inverter is electrically connected to the control unit; The voltage comparator is used for outputting a comparison signal when the voltage inputted at the first input terminal is greater than the reference voltage; The second inverter is used for inverting the comparison signal to form the detection signal.

15. The electrostatic discharge circuit according to claim 14, characterized in that: The voltage dividing unit comprises a second resistor and a third resistor, wherein the second resistor and the third resistor are connected in series between the power supply terminal and the ground terminal; The first input terminal of the voltage comparator is connected to a common terminal of the second resistor and the third resistor.

16. The electrostatic discharge circuit according to any one of claims 1 to 5, characterized in that: The detection unit includes a voltage dividing unit and a voltage comparator; the voltage dividing unit is connected between the power supply terminal and the ground terminal; The first input terminal of the voltage comparator is connected to the voltage dividing unit, the second input terminal of the voltage comparator is used to input a reference voltage, and the output terminal of the voltage comparator is electrically connected to the control unit; The voltage comparator is used for outputting the detection signal when the voltage inputted to the first input terminal is greater than the reference voltage.

17. The electrostatic discharge circuit according to any one of claims 1 to 5, characterized in that: The first switch tube comprises a substrate, and the substrate is provided with a drain region and a source region in sequence and at intervals in a specified direction; A size of the drain region in the specified direction is larger than a size of the source region in the specified direction.

18. The electrostatic discharge circuit according to claim 17, characterized in that: The first switch tube further includes a metal silicide layer and a silicide blocking layer, and the metal silicide layer is arranged on the surfaces of the drain region and the source region; The silicide blocking layer is disposed between the drain region and the metal silicide layer.

19. An electrostatic discharge circuit, characterized in that: A power supply terminal and a ground terminal are provided, and the electrostatic discharge circuit comprises: A trigger module, comprising a first resistor and a capacitor, wherein one end of the first resistor is connected to one end of the capacitor, the other end of the first resistor is connected to the power supply end, and the other end of the capacitor is connected to the ground end; A discharge module, comprising a first inverter and a first switch tube, wherein the first switch tube is connected between the power supply end and the ground end; an input end of the first inverter is connected to a common end of the first resistor and the capacitor, and an output end of the first inverter is connected to a control end of the first switch tube; and A control module includes a detection unit and a control unit, wherein the detection unit is connected between the power supply end and the ground end, and the control unit is electrically connected to the detection unit and the trigger module respectively; the detection unit is used to output a detection signal when the power supply end is in a power-on state, and the control unit is used to adjust the connection state of the capacitor and / or the first resistor when receiving the detection signal, so that the response time of the trigger module is much shorter than the rise time of the power surge voltage.

20. The electrostatic discharge circuit according to claim 19, characterized in that: The adjusting the connection state of the capacitor and / or the first resistor includes: The connection state of the first resistor is adjusted to a short-circuit state, and / or the connection state of the capacitor is adjusted to an open-circuit state, so as to shorten the response time of the trigger module to nanoseconds or picoseconds.

21. The electrostatic discharge circuit according to claim 19, characterized in that: The control unit is further configured to maintain the first resistor and the capacitor connected in series between the power supply terminal and the ground terminal in sequence when the detection signal is not received, so that the response time of the trigger module is in microseconds.

22. A radio frequency front-end module, characterized in that: A power port for connecting an external power source is provided, and the RF front-end module comprises: The electrostatic discharge circuit as claimed in any one of claims 1 to 21, wherein the power supply end of the electrostatic discharge circuit is connected to the power port.

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