Intelligent power module and its protection circuit, electrical equipment

Abstract

The present invention discloses an intelligent power module and its protection circuit and electrical equipment. The protection circuit of the intelligent power module includes a driving chip and a power switch tube, and the protection circuit includes: an electrostatic release subcircuit connected between the ground terminal of the driving chip and the emitter of the power switch tube, and configured to release the charge of the instantaneous voltage caused by static electricity generated by the intelligent power module, and the number of electrostatic release subcircuits is at least one. The protection circuit can improve the anti-static ability of the intelligent power module, and the cost is low, and it will not cause the decline of other performances of the intelligent power module.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] The present invention is a divisional application of the Chinese patent application with application number 202311287401.5 filed on October 7, 2023 and entitled “Intelligent power module, protection circuit and electrical equipment thereof”. Technical Field

[0003] The present invention relates to the technical field of intelligent power modules, and in particular to an intelligent power module and a protection circuit and electrical equipment thereof. Background Art

[0004] IPM (Intelligent Power Module) consists of gate driver chips and power devices such as IGBT (Insulate-Gate Bipolar Transistor), MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), FRD (Fast Recovery Diode), etc., which can realize functions such as power factor correction and three-phase inverter.

[0005] In intelligent power modules, the gates of transistors such as IGBTs and MOSFETs are connected to the driver chip, and the collectors and emitters are directly connected to the pins and connected to the external high-voltage circuit, without any electrostatic protection for the transistors. Since transistors such as IGBTs and MOSFETs all contain a gate oxide layer, which is the weakest part in terms of anti-static ability, they are easily broken down during use. Summary of the invention

[0006] The present invention aims to solve one of the technical problems in the related art to at least a certain extent. To this end, the purpose of the present invention is to provide an intelligent power module and its protection circuit and electrical equipment to improve the anti-static ability of the intelligent power module without affecting other performances of the intelligent power module, and at a low cost.

[0007] In order to solve the above technical problems, the first aspect of the embodiment of the present invention proposes a protection circuit for an intelligent power module, wherein the intelligent power module includes a driving chip and a power switch tube, and the protection circuit includes: an electrostatic release sub-circuit, connected between the ground terminal of the driving chip and the emitter of the power switch tube, and configured to release the charge of the instantaneous voltage caused by static electricity generated in the intelligent power module; the number of the electrostatic release sub-circuits is at least one.

[0008] In addition, the protection circuit of the intelligent power module of the embodiment of the present invention may also have the following additional technical features:

[0009] According to an embodiment of the present invention, the number of the electrostatic release sub-circuit is one, and the electrostatic release sub-circuit is connected between the ground terminal of the driving chip and the emitter of the power switch tube of the power correction circuit in the intelligent power module.

[0010] According to one embodiment of the present invention, the number of the electrostatic release sub-circuit is one, and the electrostatic release sub-circuit is connected between the ground terminal of the driving chip and the emitter of one or more power switch tubes of the three-phase lower bridge arm circuit in the intelligent power module.

[0011] According to one embodiment of the present invention, there are two electrostatic release sub-circuits, one of which is connected between the ground terminal of the driver chip and the emitter of the power switch tube of the power correction circuit in the intelligent power module, and the other electrostatic release sub-circuit is connected between the ground terminal of the driver chip and the emitter of one or more power switch tubes of the three-phase lower bridge arm circuit in the intelligent power module.

[0012] According to one embodiment of the present invention, the number of the electrostatic release sub-circuits is three, the first electrostatic release sub-circuit is connected between the ground terminal of the driving chip and the emitter of the power switch tube of the power correction circuit in the intelligent power module, the second electrostatic release sub-circuit is connected between the ground terminal of the driving chip and the emitters of multiple power switch tubes of the three-phase lower bridge arm circuit in the intelligent power module, and the third electrostatic release sub-circuit is connected between the ground terminal of the driving chip and the emitters of one or more power switch tubes of the three-phase upper bridge arm circuit in the intelligent power module.

[0013] According to an embodiment of the present invention, the electrostatic release sub-circuit includes a resistor, a first end of the resistor is connected to the emitter of the power switch tube, and a second end of the resistor is connected to the ground terminal of the driver chip.

[0014] According to an embodiment of the present invention, the electrostatic release sub-circuit further includes a capacitor, and the capacitor is connected in parallel with the resistor.

[0015] According to an embodiment of the present invention, the resistance value of the resistor is 10Ω-1MΩ, and the capacitance value of the capacitor is 100pF-1μF.

[0016] In order to solve the above technical problem, a second embodiment of the present invention provides an intelligent power module, including the protection circuit of the intelligent power module described in the first embodiment.

[0017] In order to solve the above technical problem, a third embodiment of the present invention provides an electrical device, including the intelligent power module described in the above second embodiment.

[0018] The intelligent power module and its protection circuit and electrical equipment of the embodiments of the present invention can improve the anti-static ability of the intelligent power module by connecting an electrostatic release sub-circuit between the ground terminal of the driving chip and the emitter of the power switch tube, and the cost is low and other performances of the intelligent power module are not affected.

[0019] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is a structural schematic diagram of a protection circuit of an intelligent power module according to a first embodiment of the present invention;

[0021] Figure 2 is a working principle diagram of the protection circuit of the intelligent power module of the first embodiment of the present invention;

[0022] Figure 3 is a structural schematic diagram of a protection circuit of an intelligent power module according to a second embodiment of the present invention;

[0023] Figure 4 is a structural schematic diagram of a protection circuit of an intelligent power module according to a third embodiment of the present invention;

[0024] Figure 5 is a schematic structural diagram of an electrostatic discharge subcircuit according to an embodiment of the present invention;

[0025] Figure 6 is a structural block diagram of an intelligent power module according to an embodiment of the present invention;

[0026] Figure 7 It is a structural block diagram of an electrical device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0027] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.

[0028] The intelligent power module and its protection circuit and electrical equipment according to the embodiments of the present invention are described below with reference to the accompanying drawings.

[0029] Figure 1 It is a schematic diagram of the structure of the protection circuit of the intelligent power module according to an embodiment of the present invention.

[0030] like Figure 1 As shown, the intelligent power module 100 includes a driver chip 110 and a power switch tube 10, wherein the power switch tube 10 may be an IGBT tube. The protection circuit 200 of the intelligent power module includes: an electrostatic discharge subcircuit 210. The electrostatic discharge subcircuit 210 is connected between the ground terminal of the driver chip 110 and the emitter of the power switch tube 10, and is configured to discharge the charge of the instantaneous voltage caused by static electricity generated in the intelligent power module 100, so as to enhance the anti-static ability of the power switch tube 10.

[0031] In this embodiment, see Figure 1 , the driver chip 110 may be a HVIC (High Voltage Integrated Circuit), and the intelligent power module 100 further includes a power correction circuit 130, a three-phase lower bridge arm circuit 140 (including three-phase lower bridge arms of U, V, and W), and a three-phase upper bridge arm circuit 150 (including three-phase upper bridge arms of U, V, and W). The above-mentioned power switch tube 10 may be the first switch tube 131 in the power correction circuit 130, or the second switch tube 124, the third switch tube 125, and the fourth switch tube 126 in the three-phase lower bridge arm circuit 140, or the fifth switch tube 121, the sixth switch tube 122, and the seventh switch tube 123 in the three-phase upper bridge arm circuit 150.

[0032] Among them, the ground terminal GND of the driving chip 110 serves as the negative terminal VSS (also recorded as COM) of the low-voltage power supply of the intelligent power module 100, the emitter of the first switch tube 131 is connected to the -VCC terminal of the intelligent power module 100, the second switch tube 124, the third switch tube 125, and the fourth switch tube 126 are respectively connected to the low voltage reference terminals UN, VN, and WN of the intelligent power module 100, and the fifth switch tube 121, the sixth switch tube 122, and the seventh switch tube 123 are respectively connected to the negative terminals UVS, VVS, and WVS of the high-voltage power supply of the intelligent power module 100.

[0033] Specifically, the electrostatic discharge subcircuit 210 may include: a resistor, a capacitor, or both in parallel, wherein the resistor value is between 10Ω and 1MΩ, and the capacitor value is between 100pF and 1μF. When the intelligent power module 100 is working normally, since the resistance of the electrostatic discharge subcircuit 210 is relatively large, and the two sides are respectively the strong power ground VSS and the weak power ground -VCC of the intelligent power module 100 or the low voltage reference terminals UN, VN, WN or the negative terminals UVS, VVS, WVS of the high voltage area power supply, there is almost no voltage difference, so the circuit can be equivalent to an open circuit state, which has no effect on the operation of the intelligent power module 100. When the intelligent power module 100 is subjected to static electricity or surge impact, the instantaneous voltage is relatively high, the impedance of the power switch tube 10 is relatively large, and part of the charge flows away through the electrostatic discharge subcircuit 210, which can reduce the burden on the gate of the power switch tube 10, and realize the electrostatic protection of the power switch tube 10.

[0034] Compared with the electrostatic protection measures added in the design of transistors in the related art, such as integrated gate resistors, increased gate oxide layer thickness, etc., the cost is lower and will not cause a decrease in other performances of the intelligent power module.

[0035] See also Figure 1 , other ports of the driver chip 110 and the intelligent power module 100 are introduced as follows:

[0036] The VCC terminal of the driver chip 110 is used as the positive terminal VDD of the low-voltage power supply of the intelligent power module 100;

[0037] The HIN1 end of the driver chip 110 is used as the U-phase upper bridge arm input terminal UHIN of the intelligent power module 100, the HIN2 end of the driver chip 110 is used as the V-phase upper bridge arm input terminal VHIN of the intelligent power module 100, and the HIN3 end of the driver chip 110 is used as the W-phase upper bridge arm input terminal WHIN of the intelligent power module 100; the LIN1 end of the driver chip 110 is used as the U-phase lower bridge arm input terminal ULIN of the intelligent power module 100, the LIN2 end of the driver chip 110 is used as the V-phase lower bridge arm input terminal VLIN of the intelligent power module 100, and the LIN3 end of the driver chip 110 is used as the W-phase lower bridge arm input terminal WLIN of the intelligent power module 100; the PFCIN end of the driver chip 110 is used as the input terminal PFCIN of the power correction circuit 130 of the intelligent power module 100. Among them, the six paths of the U, V, and W three-phases of the intelligent power module 100 and the input terminal of the PFC can receive 0-5V input signals.

[0038] The VB1 end of the driver chip 110 serves as the positive terminal UVB of the U-phase high-voltage area power supply of the intelligent power module 100; the HO1 end of the driver chip 110 is connected to the gate of the U-phase upper bridge arm IGBT tube (i.e., the fifth switch tube 121); the VS1 end of the driver chip 110 is connected to the emitter of the fifth switch tube 121, the anode of the fifth FRD tube 111, the collector of the U-phase lower bridge arm IGBT tube (i.e., the second switch tube 124), and the cathode of the second FRD tube 114, and serves as the negative terminal UVS of the U-phase high-voltage area power supply of the intelligent power module 100.

[0039] The VB2 terminal of the driver chip 110 serves as the positive terminal VVB of the U-phase high-voltage area power supply of the intelligent power module 100; the HO3 terminal of the driver chip 110 is connected to the gate of the V-phase upper bridge arm IGBT tube (i.e., the sixth switch tube 122); the VS2 terminal of the driver chip 110 is connected to the emitter of the sixth switch tube 122, the anode of the sixth FRD tube 112, the collector of the V-phase lower bridge arm IGBT tube (i.e., the third switch tube 125), and the cathode of the third FRD tube 115, and serves as the negative terminal VVS of the W-phase high-voltage area power supply of the intelligent power module 100.

[0040] The VB3 terminal of the driver chip 110 is used as the positive terminal WVB of the W-phase high-voltage power supply of the intelligent power module 100; the HO3 terminal of the driver chip 110 is connected to the gate of the W-phase upper bridge arm IGBT tube (i.e., the seventh switch tube 123); the VS3 terminal of the driver chip 110 is connected to the emitter of the seventh switch tube 123, the anode of the seventh FRD tube 113, the collector of the W-phase lower bridge arm IGBT tube (i.e., the fourth switch tube 126), and the cathode of the fourth FRD tube 116, and serves as the negative terminal WVS of the W-phase high-voltage power supply of the intelligent power module 100. The collector of the fifth switch tube 121, the cathode of the fifth FRD tube 111, the collector of the sixth switch tube 122, the cathode of the sixth FRD tube 112, the collector of the seventh switch tube 123, and the cathode of the seventh FRD tube 113 are connected, and serve as the high voltage input terminal VCC2 of the intelligent power module 100, and VCC2 is generally connected to a 300V voltage.

[0041] The LO1 terminal of the driving chip 110 is connected to the gate of the second switch tube 124, the LO2 terminal of the driving chip 110 is connected to the gate of the third switch tube 125, and the LO3 terminal of the driving chip 110 is connected to the gate of the fourth switch tube 126. The emitter of the second switch tube 124 is connected to the anode of the second FRD tube 114 and serves as the U-phase low voltage reference terminal UN of the intelligent power module 100; the emitter of the third switch tube 125 is connected to the anode of the third FRD tube 115 and serves as the V-phase low voltage reference terminal VN of the intelligent power module 100; the emitter of the fourth switch tube 126 is connected to the anode of the fourth FRD tube 116 and serves as the W-phase low voltage reference terminal WN of the intelligent power module 100.

[0042] The function of the driver chip 110 is to transmit the 0-5V logic signals of the input terminals HIN1, HIN2, HIN3 and LIN1, LIN2, LIN3 and PFCIN to the output terminals HO1, HO2, HO3 and LO1, LO2, LO3, PFCIN, respectively, wherein HO1, HO2, HO3 are logic signals of VS to VS + 15V, and LO1, LO2, LO3, PFCIN are logic signals of 0-15V. Itrip is an overcurrent protection detection port, and Fault is a fault output port.

[0043] The PFCOUT terminal of the driving chip 110 is connected to the gate of the first switching tube 131; the emitter of the first switching tube 131 and the anode of the first diode 133 are connected, and serve as the negative terminal -VCC of the PFC inductor connection of the intelligent power module 100; the collector of the first switching tube 131, the cathode of the first diode 133 and the anode of the second diode 132 are connected, and serve as the PFC inductor connection terminal PFC of the intelligent power module 100, and the second diode 132 is connected to the bus capacitor connection terminal VCC1.

[0044] In some embodiments of the present invention, see Figure 1 The number of the electrostatic release sub-circuit 210 is one, and the electrostatic release sub-circuit 210 is connected between the ground terminal of the driving chip 110 and the emitter of the first switch tube 131 .

[0045] Specifically, most of the pins of the intelligent power module 100 have strong anti-static ability, and the path with the weakest anti-static ability is Figure 1 The path from VSS (connected to the ground terminal GND of the driver chip 110) to -VCC (connected to the emitter of the first switch tube 131) shown in FIG. 1 is a path from the ground terminal GND of the driver chip 110 to the PFCOUT terminal through a diode. Figure 2As shown, if the electrostatic discharge subcircuit 210 does not work, when the static electricity hits -VCC from VSS, the path is shown by the dotted line in the figure, and all voltages are borne by the G pole to the E pole of the first switch tube 131, passing through the weakest gate oxide layer. The present invention adds an electrostatic discharge subcircuit 210 between the emitter and VSS of the first switch tube 131. The specific circuit form can be a resistor, a capacitor, or a parallel connection of the two, wherein the resistance of the resistor is between 10 and 1M ohms, and the capacitance of the capacitor is between 100pF and 1μF. When the intelligent power module 100 is working normally, since the resistance of the electrostatic discharge subcircuit 210 is large, and the two sides are respectively a strong electric ground and a weak electric ground, there is almost no voltage difference, so the circuit can be equivalent to an open circuit state, which has no effect on the operation of the intelligent power module 100. When static electricity or surge impact occurs, the instantaneous voltage is high, the impedance of the first switch tube 131 is large, and part of the charge flows away through the electrostatic discharge subcircuit 210, reducing the burden on the gate of the first switch tube 131.

[0046] In some embodiments of the present invention, Figure 3 As shown, there is one electrostatic release sub-circuit 210, which is connected between the ground terminal of the driving chip 110 and multiple (such as any two or three) of the emitters of the second switch tube 124, the third switch tube 125, and the fourth switch tube 126.

[0047] In this embodiment, multiple switch tubes of the three-phase lower bridge arm circuit 140 can share an electrostatic discharge sub-circuit 210. Figure 1 Similar to the embodiment shown, when the intelligent power module 100 works normally, the electrostatic discharge subcircuit 210 will not affect the intelligent power module 100. When the intelligent power module 100 is subjected to static electricity or surge shock, the instantaneous voltage is high, and part of the charge flows away through the electrostatic discharge subcircuit 210, reducing the burden on the gates of the second switch tube 124, the third switch tube 125, and the fourth switch tube 126. Since the three paths can share one electrostatic discharge subcircuit 210, the number of materials and the board area are reduced.

[0048] In some embodiments of the present invention, Figure 4 As shown, there are two electrostatic release sub-circuits 210, which are respectively denoted as the first electrostatic release sub-circuit 210a and the second electrostatic release sub-circuit 210b. The first electrostatic release sub-circuit 210a is connected between the ground terminal of the driving chip 110 and the emitter of the first switch tube 131, and the second electrostatic release sub-circuit 210b is connected between the ground terminal of the driving chip 110 and the emitter of the second switch tube 124, the emitter of the third switch tube 125, and the emitter of the fourth switch tube 126.

[0049] Specifically, compared to Figure 1 , Figure 3The anti-static capability of the intelligent power module 100 can be better improved by using two electrostatic release sub-circuits 210 .

[0050] It should be noted that the upper bridge IGBT is connected to the VS terminal of the driver chip 110 inside the intelligent power module 100 and has a strong anti-static capability, and a similar electrostatic release sub-circuit as the lower bridge can be used as needed.

[0051] In some embodiments of the present invention, there are three electrostatic release sub-circuits 210, which are respectively recorded as the first electrostatic release sub-circuit 210a, the second electrostatic release sub-circuit 210b and the third electrostatic release sub-circuit 210c. The first electrostatic release sub-circuit 210a is connected between the ground terminal of the driving chip 110 and the emitter of the first switch tube 131, the second electrostatic release sub-circuit 210b is connected between the ground terminal of the driving chip 110 and multiple emitters of the second switch tube 124, the third switch tube 125, and the fourth switch tube 126, and the third electrostatic release sub-circuit 210c is connected between the ground terminal of the driving chip 110 and multiple emitters of the fifth switch tube 121, the sixth switch tube 122, and the seventh switch tube 123.

[0052] Specifically, compared to Figure 1 , Figure 3 , Figure 4 One or two electrostatic release sub-circuits 210 are provided, and the anti-static capability of the intelligent power module 100 can be further improved by using three electrostatic release sub-circuits 210 .

[0053] In some embodiments of the present invention, see Figure 2 The electrostatic discharge sub-circuit 210 includes a resistor R, a first end of the resistor R is connected to the emitter of the power switch tube 10 , and a second end of the resistor R is connected to the ground end of the driving chip 110 .

[0054] Specifically, the resistance value of the resistor R can be 10Ω to 1MΩ. When the intelligent power module 100 works normally, due to the large resistance of the electrostatic discharge subcircuit 210, the loop where the electrostatic discharge subcircuit 210 is located can be equivalent to an open circuit state, which has no effect on the operation of the intelligent power module 100. When static electricity or surge shock occurs to the intelligent power module 100, the instantaneous voltage is high, and part of the charge can flow away through the resistor R, reducing the burden on the gate of the power switch tube 10.

[0055] In some embodiments of the present invention, Figure 5 As shown, the electrostatic release subcircuit 210 includes a resistor R and a capacitor C, a first end of the resistor R is connected to the emitter of the power switch tube 10, a second end of the resistor R is connected to the ground terminal of the driving chip 110, and the capacitor C is connected to the resistor R in parallel.

[0056] Specifically, the resistance of the resistor R can be 10Ω to 1MΩ, and the capacitance of the capacitor C can be 100pF to 1μF. When the intelligent power module 100 works normally, due to the large resistance of the electrostatic discharge subcircuit 210, the loop where the electrostatic discharge subcircuit 210 is located can be equivalent to an open circuit state, which has no effect on the operation of the intelligent power module 100. When static electricity or surge shock occurs to the intelligent power module 100, the instantaneous voltage is high, and part of the charge can flow away through the resistor R and the capacitor C in parallel, reducing the burden on the gate of the power switch tube 10.

[0057] The protection circuit of the intelligent power module of the embodiment of the present invention can improve the anti-static ability of the intelligent power module by connecting an electrostatic release subcircuit between the ground terminal of the driver chip and the emitter of the power switch tube. In addition, the three paths of the three-phase bridge arm circuit can share one electrostatic release subcircuit, which can reduce the number of materials and the board area.

[0058] Figure 6 4 is a structural block diagram of an intelligent power module according to an embodiment of the present invention.

[0059] like Figure 6 As shown, the intelligent power module 100 includes the protection circuit 200 of the intelligent power module of the above embodiment.

[0060] In this embodiment, the intelligent power module 100 further includes a driving chip 110, a power correction circuit 130, a three-phase lower bridge arm circuit 140 and a three-phase upper bridge arm circuit 150. The driving chip 110 has a ground terminal, and the power correction circuit 130, the three-phase lower bridge arm circuit 140 and the three-phase upper bridge arm circuit 150 all include a power switch tube 10.

[0061] The intelligent power module of the embodiment of the present invention can improve the anti-static capability of the intelligent power module by connecting an electrostatic release subcircuit between the ground terminal of the driver chip and the emitter of the power switch tube through the above protection circuit.

[0062] Figure 7 It is a structural block diagram of an electrical device according to an embodiment of the present invention.

[0063] like Figure 7 As shown, the electrical device 1000 includes the intelligent power module 100 of the above embodiment.

[0064] In this embodiment, the electrical device 1000 may be, but is not limited to, an air conditioner, a refrigerator, a washing machine, or other device including a three-phase motor, and the intelligent power module 100 may be used to drive the three-phase motor.

[0065] The electrical equipment of the embodiment of the present invention can improve the safety of use of the electrical equipment through the above-mentioned intelligent power module.

[0066] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0067] In the description of the present invention, it is to be understood that the terms “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0068] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0069] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0070] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0071] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. A protection circuit for an intelligent power module, characterized in that: The intelligent power module includes a driving chip and a power switch tube, and the protection circuit includes: The electrostatic discharge sub-circuit is connected between the ground terminal of the driving chip and the emitter of the power switch tube, and is configured to discharge the charge of the instantaneous voltage caused by the static electricity generated by the intelligent power module; The number of the electrostatic discharge sub-circuit is at least one.

2. The protection circuit of the intelligent power module according to claim 1, characterized in that: The number of the electrostatic release sub-circuit is one, and the electrostatic release sub-circuit is connected between the ground terminal of the driving chip and the emitter of the power switch tube of the power correction circuit in the intelligent power module.

3. The protection circuit of the intelligent power module according to claim 1, characterized in that: The number of the electrostatic release sub-circuit is one, and the electrostatic release sub-circuit is connected between the ground terminal of the driving chip and the emitter of one or more power switch tubes of the three-phase lower bridge arm circuit in the intelligent power module.

4. The protection circuit of the intelligent power module according to claim 1, characterized in that: There are two electrostatic release sub-circuits, one of which is connected between the ground terminal of the driver chip and the emitter of the power switch tube of the power correction circuit in the intelligent power module, and the other electrostatic release sub-circuit is connected between the ground terminal of the driver chip and the emitter of one or more power switch tubes of the three-phase lower bridge arm circuit in the intelligent power module.

5. The protection circuit of the intelligent power module according to claim 1, characterized in that: There are three electrostatic release sub-circuits, the first of which is connected between the ground terminal of the driver chip and the emitter of the power switch tube of the power correction circuit in the intelligent power module, the second of which is connected between the ground terminal of the driver chip and the emitters of multiple power switch tubes of the three-phase lower bridge arm circuit in the intelligent power module, and the third of which is connected between the ground terminal of the driver chip and the emitters of one or more power switch tubes of the three-phase upper bridge arm circuit in the intelligent power module.

6. The protection circuit of the intelligent power module according to any one of claims 1 to 5, characterized in that: The electrostatic discharge subcircuit comprises a resistor, a first end of the resistor is connected to the emitter of the power switch tube, and a second end of the resistor is connected to the ground terminal of the driving chip.

7. The protection circuit of the intelligent power module according to claim 6, characterized in that: The electrostatic discharge subcircuit further includes a capacitor, and the capacitor is connected in parallel with the resistor.

8. The protection circuit of the intelligent power module according to claim 7, characterized in that: The resistance value of the resistor is 10Ω to 1MΩ, and the capacitance value of the capacitor is 100pF to 1μF.

9. An intelligent power module, characterized in that: A protection circuit comprising an intelligent power module as claimed in any one of claims 1 to 8.

10. An electrical device, characterized in that: Comprising the intelligent power module as claimed in claim 9.

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