Voltage-controlled oscillator with wide frequency regulation range

Abstract

The invention discloses a voltage-controlled oscillator with a wide frequency regulation range, relates to the technical field of radio frequency, and aims to solve the problems of narrow and discontinuous output frequency tuning range of an oscillator in the prior art. The voltage-controlled oscillator comprises a passive topology module, an active negative resistance module, a frequency regulation module and a mode switching module, the passive topology module comprises a plurality of mutually coupled inductors; the plurality of inductors are coupled together and provide a required impedance peak; the plurality of inductors comprise a splayed inductance coil, a first annular inductance coil and a second annular inductance coil; the inverted V-shaped inductance coil comprises a first inductance coil, a second inductance coil and a public inductance coil; the frequency adjusting module is used for adjusting the corresponding frequency of the impedance peak; the active negative resistance module is used for providing signal gain for the passive topology module to meet oscillation conditions, and the mode switching module is used for switching working modes of the oscillator. The oscillator has four continuous working frequency bands, and the tuning range of the output frequency is wider.

Description

Technical Field

[0001] The present invention relates to the field of radio frequency technology, and in particular to a voltage-controlled oscillator with a wide frequency adjustment range. Background Art

[0002] In recent decades, with the rapid development of wireless communication technology, the advantages of millimeter wave technology have become increasingly prominent, and many domestic and foreign scientific research institutions have begun to shift their research focus to the development and application of millimeter wave technology. As an important component of the millimeter wave system, the performance of the frequency source determines the signal-to-noise ratio of the entire system transmission signal. Among the frequency sources, the voltage-controlled oscillator is the most core module, which greatly affects the performance of the frequency source. The voltage-controlled oscillator self-excites to generate an oscillation signal. By changing the control voltage, the frequency of the oscillation signal can be adjusted. After processing, it is output to the subsequent circuit module for frequency conversion. It is a very important module in the wireless communication system. Nowadays, many systems that use millimeter wave technology have different operating frequency bands. If you want the frequency source to have strong compatibility and a wide range of applications, the output frequency range of the voltage-controlled oscillator is required to be wide. At the same time, another important performance indicator of the voltage-controlled oscillator is phase noise, which determines the signal-to-noise ratio of the output signal of the voltage-controlled oscillator. Therefore, the research on voltage-controlled oscillators with wide FTR (frequency adjustment range) and low phase noise has received widespread attention.

[0003] The implementation schemes of the voltage-controlled oscillator with a wide frequency adjustment range in the prior art can be summarized as follows:

[0004] The first solution: a four-port dual-mode VCO (oscillator, Voltage-Controlled Oscillator). The parallel inductor layout can achieve a small inductor with a high Q value (Q value is also known as the quality factor, which is an important parameter to measure the energy loss of an inductor or a resonant circuit; the higher the Q value, the smaller the energy loss of the inductor and the better the performance), which is conducive to millimeter wave operation. By controlling the opening and closing of the two active negative resistance cores, switching between two different operating modes, there is an overlapping interval between the two operating frequency bands, achieving an FTR (frequency adjustment range) that is twice that of a single-core voltage-controlled oscillator.

[0005] The second solution is an EM hybrid-coupled quad-core quad-mode VCO with additional capacitors. By controlling whether the additional capacitor is connected to the resonant cavity, the working mode of the circuit is changed, and the 4-mode function of the voltage-controlled oscillator is realized in combination with electromagnetic hybrid coupling. The 4 modes are distributed in different working frequency bands, and there are overlapping intervals between the frequency bands, achieving an FTR (FTR is the frequency adjustment range) that is 4 times that of a single-core VCO.

[0006] The third solution: a quad-mode quad-core VCO implemented using mode splitting technology. It can generate four effective inductance values, thereby achieving impedance peaks at four different frequencies. The four active negative resistance cores provide sufficient gain for the passive topology, ultimately achieving four different operating frequency bands with overlapping intervals between the frequency bands, achieving a FTR (frequency regulation range) that is four times that of a single-core VCO.

[0007] The fourth scheme: a dual-core four-mode voltage-controlled oscillator. Two figure-eight inductors, four mode switching switches and four voltage-controlled oscillator units; utilizing the characteristic that the figure-eight inductor has two modes, the first figure-eight inductor without a center tap and the second figure-eight inductor are placed orthogonally, so that the constructed voltage-controlled oscillator has four working modes on the basis of occupying only a small area, and the four working modes cover different resonant frequency ranges respectively, so that the oscillation frequency between each working mode is independent of each other, thereby obtaining a wide-band clock source, solving the problem of using multiple independent voltage-controlled oscillators occupying too large an area and consuming too much power; two voltage-controlled oscillator units are connected to the two ends of the figure-eight inductor to form a dual-core structure; the obtained dual-core structure has reduced phase noise compared to the existing single-core structure.

[0008] The above-mentioned several implementation schemes of voltage-controlled oscillators with wide frequency adjustment range each have some shortcomings, which are analyzed as follows:

[0009] The FTR (frequency adjustment range) of the four-port dual-mode VCO in the first solution is not sufficient for many applications.

[0010] In the second solution, for the EM hybrid coupled four-mode quad-core VCO with additional capacitors, since there are only two effective inductance values, the other two modes are generated by introducing additional coupling capacitor pairs. Large coupling capacitors will introduce non-negligible parasitic capacitance, and the two modes sharing the same inductor will limit the design space, making it difficult to optimize the two modes at the same time.

[0011] In the third solution, the quad-mode quad-core VCO implemented using mode splitting technology requires four active negative resistance modules to work simultaneously, so the power consumption is relatively large.

[0012] In the fourth scheme, two figure-eight inductors and corresponding four voltage-controlled oscillation units are used, but when one of the two figure-eight inductors is working, the other figure-eight inductor is not working. Although the other figure-eight inductor is not working, it will also affect the working figure-eight inductor, thereby affecting the size of the resonant frequency and interfering with the position of the resonant point, making it difficult to adjust the four frequency bands to form a partially overlapping continuous frequency band, that is, the output resonance cannot be continuous, and the operability in practical applications is poor, which still needs to be improved. Summary of the invention

[0013] The object of the present invention is to provide a voltage-controlled oscillator with a wide frequency adjustment range, so as to improve the frequency adjustment range and application performance of the voltage-controlled oscillator.

[0014] In order to achieve the above object, the present invention provides the following technical solutions:

[0015] The present invention provides a voltage-controlled oscillator with a wide frequency adjustment range, comprising: a source topology module, an active negative resistance module, a frequency adjustment module and a mode switching module;

[0016] The active negative resistance module, the frequency adjustment module and the mode switching module are all connected to the passive topology module;

[0017] The passive topology module includes a plurality of inductors; the plurality of inductors are used to provide a working impedance peak when coupled together; the plurality of inductors include an eight-shaped inductor coil, a first annular inductor coil and a second annular inductor coil; the eight-shaped inductor coil includes a first inductor coil, a second inductor coil and a common inductor coil; the first annular inductor coil surrounds a first portion of the eight-shaped inductor coil to form a first nested inductor coil, and the second annular inductor coil surrounds a second portion of the eight-shaped inductor coil to form a second nested inductor coil;

[0018] The frequency adjustment module is used to adjust the corresponding frequency of the working impedance peak;

[0019] The active negative resistance module is used to provide signal gain for the passive topology module so as to assist the passive topology module in completing the resonance function; the mode switching module is used to select and switch between multiple working modes.

[0020] Technical effect: Compared with the prior art, the present invention provides a voltage-controlled oscillator with a wide frequency adjustment range, wherein the passive topology module adopts one figure-eight inductor and two toroidal inductors, wherein the first toroidal inductor and the first part of the figure-eight inductor form a first nested inductor, and the second toroidal inductor and the first part of the figure-eight inductor form a second nested inductor, which is equivalent to the passive topology module having two oscillator cores, which are coupled to each other and work together, and with the cooperation of the active negative resistance module, the frequency adjustment module and the mode switching module, it outputs a continuous plurality of working modes with output frequencies covering different frequency bands. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0022] Figure 1 A schematic diagram of the circuit structure of a voltage-controlled oscillator with a wide frequency adjustment range provided by an embodiment of the present invention;

[0023] Figure 2 One of the circuit structure diagrams of a passive topology module provided by an embodiment of the present invention;

[0024] Figure 3 A second schematic diagram of the circuit structure of a passive topology module provided by an embodiment of the present invention;

[0025] Figure 4 for Figure 2 Equivalent circuit diagram of passive topology module;

[0026] Figure 5 A diagram showing simulation results of the input impedance of a passive topology module provided by an embodiment of the present invention;

[0027] Figure 6 A schematic diagram of continuous frequency bands of a passive topology module provided by an embodiment of the present invention;

[0028] Figure 7 A schematic structural diagram of an active negative resistance module provided by an embodiment of the present invention;

[0029] Figure 8 A schematic diagram of the circuit structure of a low-frequency negative resistance unit in an active negative resistance module provided by an embodiment of the present invention;

[0030] Fig. 9 A schematic diagram of the circuit structure of a high-frequency negative resistance unit in an active negative resistance module provided by an embodiment of the present invention;

[0031] Fig.10 One of the waveform diagrams provided for one embodiment of the present invention;

[0032] Fig.11 A second waveform diagram provided for an embodiment of the present invention;

[0033] Fig.12 A schematic diagram of the circuit structure of a frequency adjustment module provided by an embodiment of the present invention;

[0034] Fig.13 A schematic diagram of the circuit structure of a mode switching module provided in one embodiment of the present invention;

[0035] Fig.14 A state diagram of four working modes provided for an embodiment of the present invention.

[0036] Figure numerals: 10 - passive topology module; 20 - active negative resistance module; 30 - frequency adjustment module; 40 - mode switching module; 21 - low-frequency negative resistance unit; 22 - high-frequency negative resistance unit; 211 - first low-frequency active core; 212 - second low-frequency active core; 221 - first high-frequency active core; 222 - second high-frequency active core; 31 - variable capacitor group; 32 - digitally controlled capacitor array. DETAILED DESCRIPTION

[0037] In order to clearly describe the technical solutions of the embodiments of the present invention, in the embodiments of the present invention, words such as "first" and "second" are used to distinguish the same items or similar items with basically the same functions and effects. For example, the first threshold and the second threshold are only used to distinguish different thresholds, and their order is not limited. Those skilled in the art can understand that words such as "first" and "second" do not limit the quantity and execution order, and words such as "first" and "second" do not necessarily limit them to be different.

[0038] It should be noted that, in the present invention, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the present invention should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0039] In the present invention, "at least one" means one or more, "more than one" means two or more. "And / or" describes the association relationship of the associated objects, indicating that three types of relationships may exist.

[0040] like Figure 1 As shown, an embodiment of the present invention provides a voltage-controlled oscillator with a wide frequency adjustment range, which may include: a passive topology module 10, an active negative resistance module 20, a frequency adjustment module 30 and a mode switching module 40;

[0041] The active negative resistance module 20, the frequency adjustment module 30 and the mode switching module 40 are all connected to the passive topology module 10;

[0042] like Figure 2As shown, the passive topology module 10 includes a plurality of inductors; the plurality of inductors are used to provide a working impedance peak when coupled together; the plurality of inductors include an eight-shaped inductor coil, a first annular inductor coil and a second annular inductor coil; the eight-shaped inductor coil includes a first inductor coil, a second inductor coil and a common inductor coil; the first annular inductor coil surrounds a first portion of the eight-shaped inductor coil to form a first nested inductor coil, and the second annular inductor coil surrounds a second portion of the eight-shaped inductor coil to form a second nested inductor coil; that is, the passive topology module 10 is equivalent to a resonant cavity;

[0043] The frequency adjustment module 30 is used to adjust the corresponding frequency of the working impedance peak;

[0044] The active negative resistance module 20 is used to provide signal gain for the passive topology module 10 so as to assist the passive topology module to complete the resonance function; the mode switching module 40 is used to select and switch between multiple working modes.

[0045] Specifically, the active negative resistance module includes a low-frequency negative resistance unit and a high-frequency negative resistance unit;

[0046] When the low-frequency negative resistance unit is working and the high-frequency negative resistance unit is turned off, the passive topology module realizes at least the first working mode and the second working mode under the selection control of the mode switching module and the assistance of the frequency adjustment module;

[0047] When the low-frequency negative resistance unit is turned off and the high-frequency negative resistance unit is working, the passive topology module realizes at least the third working mode and the fourth working mode under the selection control of the mode switching module and the assistance of the frequency adjustment module;

[0048] The first working mode, the second working mode, the third working mode and the fourth working mode respectively cover different resonant frequency ranges; wherein two adjacent working modes have overlapping resonant frequency ranges to form a continuous frequency tuning range.

[0049] Specifically, Figure 2 As shown, the first inductor coil at least includes a first coil winding L1 and a second coil winding L2;

[0050] The second inductor coil at least includes a third coil winding L3 and a fourth coil winding L4; the common inductor coil at least includes a fifth coil winding L5; the fifth coil winding L5 is connected to a second voltage VDD;

[0051] The first end of the first coil winding L1 is connected to the first end of the third coil winding L3; the first end of the first coil winding L1 and the first end of the third coil winding L3 are both connected to the first end of the fifth coil winding L5;

[0052] The first end of the second coil winding L2 is connected to the first end of the fourth coil winding L4; the first end of the second coil winding L2 and the first end of the fourth coil winding L4 are both connected to the second end of the fifth coil winding L5;

[0053] The second end of the first coil winding L1 is the first end (SL end) of the figure eight inductor coil;

[0054] The second end of the second coil winding L2 is the second end (SR end) of the figure eight inductor coil;

[0055] The second end of the third coil winding L3 is the third end (PL end) of the figure eight inductor coil;

[0056] The second end of the fourth coil winding L4 is the fourth end (PR end) of the figure eight inductor coil;

[0057] The first annular inductor is sleeved around the first coil winding L1 and the second coil winding L2;

[0058] The second annular inductor is sleeved on the periphery of the third coil winding L3 and the fourth coil winding L4;

[0059] The first annular inductor at least includes a sixth coil winding L6 and a seventh coil winding L7, a first end of the sixth coil winding L6 is connected to a first end of the seventh coil winding L7; a first end of the sixth coil winding L6 and a first end of the seventh coil winding L7 are both connected to a third voltage VB;

[0060] The second end of the sixth coil winding L6 is the first end (SSL end) of the first toroidal inductor;

[0061] The second end of the seventh coil winding L7 is the second end (SSR end) of the first toroidal inductor;

[0062] The second annular inductor at least includes an eighth coil winding L8 and a ninth coil winding L9, wherein a first end of the eighth coil winding L8 is connected to a first end of the ninth coil winding L9; and a first end of the eighth coil winding L8 and a first end of the ninth coil winding L9 are both connected to a third voltage VB;

[0063] The second end of the eighth coil winding L8 is the first end (PPL end) of the second toroidal coil;

[0064] The second end of the ninth coil winding L9 is the second end (PPR end) of the second annular coil.

[0065] Obviously, if Figure 2 and Figure 3 As shown, the passive topology module 10 is connected to the active negative resistance module 20 through the SL terminal, the SR terminal, the PL terminal, the PR terminal, the SSL terminal, the SSR terminal, the PPL terminal and the PPR terminal.

[0066] The passive topology module 10 is connected to the frequency adjustment module 30 through the SL terminal, the SR terminal, the PL terminal, the PR terminal, the SSL terminal, the SSR terminal, the PPL terminal and the PPR terminal.

[0067] The passive topology module 10 is connected to the mode switching module 40 via the SL terminal, the SR terminal, the PL terminal and the PR terminal.

[0068] In order to understand the coupling principle of multiple inductors in the passive topology module, Figure 3 , Figure 4 , pictures and Figure 6 Provide explanation.

[0069] Figure 4 for Figure 3 The equivalent circuit diagram of the passive topology module 10 in FIG. Figure 3 As shown, the eight-shaped inductor includes the upper part L S and the lower part L P , upper part L S That is, the first part mentioned above, the lower half of the eight-shaped inductor coil L P This is the second part mentioned above. The upper part L S The first toroidal inductor L SS The first nested inductor coil is formed, and the lower part L P and the second toroidal inductor L PP The second nested inductor coil is formed, and then combined with Figure 4 The equivalent circuit diagram is as follows: Figure 4 As shown, the passive topology module 10 is equivalent to having two oscillator cores, wherein Figure 4 L in the upper middle part S , R S , L SS and R SS Equivalent to an oscillator core, Figure 4 L in the lower middle part P , R P , L PP and R PP Equivalent to another oscillator core. Multiple inductors, i.e., the upper and lower oscillator cores, work simultaneously and couple with each other, generating input working impedance and working impedance peak with the assistance of the frequency adjustment module.

[0070] Inner ring inductance (L S With L P ) between the outer ring inductance (L PP With L SS ) and the inductance between the outer and inner rings (L P With L PP , L SWith L SS , L P With L SS , L S With L PP ), there is a certain coupling coefficient between them, such as Figure 4 Among them are K1, K2, K3 and K4.

[0071] It can be understood that by selecting appropriate inductance values ​​of the figure-eight inductor coil and the nested inductor coil, and adjusting the coupling coefficients (K1-K4) between multiple inductors to appropriate values, the corresponding frequency of the input working impedance peak of the passive topology module can be adjusted to the corresponding working frequency. The input impedance diagram is shown in FIG. Figure 5 As shown. Finally, the voltage-controlled oscillator has at least 4 operating frequency bands with overlapping ranges (such as Figure 6 As shown), a wider FTR (frequency adjustment range) is achieved.

[0072] Technical effect analysis: The passive topology module in the embodiment of the present invention adopts one figure-eight inductor and two toroidal inductors, wherein the first toroidal inductor and the first part of the figure-eight inductor form a first nested inductor, and the second toroidal inductor and the first part of the figure-eight inductor form a second nested inductor, which is equivalent to a passive topology module with two oscillator cores, which are coupled to each other and work together, and with the cooperation of the active negative resistance module, the frequency adjustment module and the mode switching module, it outputs continuous multiple working modes with output frequencies covering different frequency bands. The fourth solution mentioned in the background technology uses two completely independent figure-eight inductor coils. According to analysis, even if one of the two different figure-eight inductor coils is powered on and the other is not powered on, the two figure-eight inductor coils will definitely interfere with each other. The inductor coil that is not powered on will generate an induced current due to electromagnetic coupling, which will in turn affect the inductance value of the figure-eight inductor that is powered on, and ultimately affect the size of the resonant frequency and the position of the interference resonance point, making it difficult to adjust the four frequency bands to form a partially overlapping continuous frequency band, which is not very practical and has low operability. Conversely, it is emphasized that all inductors in the embodiment of the present invention are coupled and work at the same time, avoiding the defects of the fourth solution in the prior art, and can form a continuous output frequency band, which is very practical.

[0073] like Figure 7 As shown, the active negative resistance module 20 includes a low-frequency negative resistance unit 21 and a high-frequency negative resistance unit 22 .

[0074] When the low-frequency negative resistance unit 21 is working and the high-frequency negative resistance unit 22 is turned off, the passive topology module 10 implements at least the first working mode and the second working mode under the selection control of the mode switching module 40 and the assistance of the frequency adjustment module 30;

[0075] When the low-frequency negative resistance unit 21 is turned off and the high-frequency negative resistance unit 22 is working, the passive topology module 10 implements at least the third working mode and the fourth working mode under the selection control of the mode switching module 40 and the assistance of the frequency adjustment module 30 .

[0076] like Figure 5 and Figure 6 As shown, the first working mode, the second working mode, the third working mode and the fourth working mode respectively cover different resonant frequency ranges; wherein two consecutive working modes have overlapping resonant frequency ranges to form a continuous frequency range.

[0077] like Figure 8 As shown, the low-frequency negative resistance unit 21 includes a first low-frequency active core 211 and a second low-frequency active core 212 .

[0078] like Figure 8 The first low-frequency active core 211 shown includes a first NMOS transistor N1, a second NMOS transistor N2, a third NMOS transistor N3, a first PMOS transistor P1 and a second PMOS transistor P2;

[0079] The drain of the first NMOS tube N1 is connected to the first end (SL end) of the figure eight inductor; the gate of the first NMOS tube N1 is connected to the drain of the second NMOS tube N2; the source of the first NMOS tube N1 is connected to the source of the first PMOS tube P1; the drain of the first PMOS tube P1 is connected to the drain of the third NMOS tube N3; the gate of the first PMOS tube P1 is connected to the first end (SSL end) of the first ring inductor; the source of the third NMOS tube N3 is grounded; the gate of the third NMOS tube N3 is connected to the first control voltage V L ; The first control voltage V L Used to control the opening and closing of the low-frequency negative resistance unit, and control the power consumption adjustment of the low-frequency negative resistance unit;

[0080] The drain of the second NMOS tube N2 is connected to the second end (SR end) of the figure eight inductor coil; the gate of the second NMOS tube N2 is connected to the drain of the first NMOS tube N1;

[0081] The source of the second NMOS tube N2 is connected to the source of the second PMOS tube P2; the drain of the second PMOS tube P2 is connected to the drain of the third NMOS tube N3; the gate of the second PMOS tube P2 is connected to the second end (SSR end) of the first toroidal inductor;

[0082] like Figure 8 As shown, the second low-frequency active core 212 includes a fourth NMOS transistor N4, a fifth NMOS transistor N5, a sixth NMOS transistor N6, a third PMOS transistor P3 and a fourth PMOS transistor P4;

[0083] The drain of the fourth NMOS tube N4 is connected to the third end (PL end) of the figure eight inductor coil; the gate of the fourth NMOS tube N4 is connected to the drain of the fifth NMOS tube N5;

[0084] The source of the fourth NMOS tube N4 is connected to the source of the third PMOS tube P3; the drain of the third PMOS tube P3 is connected to the drain of the sixth NMOS tube N6; the gate of the third PMOS tube P3 is connected to the first end (PPL end) of the second ring coil; the source of the sixth NMOS tube N6 is grounded; the gate of the sixth NMOS tube N6 is connected to the first control voltage V L ;

[0085] The drain of the fifth NMOS transistor N5 is connected to the fourth end (PR end) of the figure eight inductor coil; the gate of the fifth NMOS transistor N5 is connected to the drain of the fourth NMOS transistor N4;

[0086] The source of the fifth NMOS transistor N5 is connected to the source of the fourth PMOS transistor P4; the drain of the fourth PMOS transistor P4 is connected to the drain of the sixth NMOS transistor N6; the gate of the second PMOS transistor P2 is connected to the second end (PPR end) of the second ring coil.

[0087] like Fig. 9 As shown, the high-frequency negative resistance unit 22 includes a first high-frequency active core 221 and a second high-frequency active core 222;

[0088] like Fig. 9 As shown, the first high-frequency active core 221 includes a seventh NMOS transistor N7, an eighth NMOS transistor N8 and a ninth NMOS transistor N9;

[0089] The drain of the seventh NMOS tube N7 is connected to the first end (SL end) of the figure eight inductor; the gate of the seventh NMOS tube N7 is connected to the first end of the first ring inductor; the source of the seventh NMOS tube N7 is connected to the drain of the ninth NMOS tube N9; the source of the ninth NMOS tube N9 is grounded; the gate of the ninth NMOS tube N9 is connected to the second control voltage V H ; The second control voltage V H Used to control the opening and closing of the high-frequency negative resistance unit, and control the power consumption adjustment of the high-frequency negative resistance unit;

[0090] The drain of the eighth NMOS tube N8 is connected to the second end (SR end) of the figure eight inductor coil; the gate of the eighth NMOS tube N8 is connected to the second end (SSR end) of the first ring inductor coil; the source of the eighth NMOS tube N8 is connected to the drain of the ninth NMOS tube N9;

[0091] like Fig. 9As shown, the second high-frequency active core 222 includes a tenth NMOS transistor N10, an eleventh NMOS transistor N11 and a twelfth NMOS transistor N12;

[0092] The drain of the tenth NMOS tube N10 is connected to the third end (PL end) of the figure eight inductor coil; the gate of the tenth NMOS tube N10 is connected to the first end (PPL end) of the second ring coil; the source of the tenth NMOS tube N10 is connected to the drain of the twelfth NMOS tube N12; the source of the twelfth NMOS tube N12 is grounded; the gate of the twelfth NMOS tube N12 is connected to the second control voltage V H ;

[0093] The drain of the eleventh NMOS tube N11 is connected to the fourth end (PR end) of the figure eight inductor coil; the gate of the eleventh NMOS tube N11 is connected to the second end (PPR end) of the second ring coil; the source of the eleventh NMOS tube N11 is connected to the drain of the twelfth NMOS tube N12.

[0094] like Figure 8 and Fig. 9 As shown, the substrate of the first PMOS tube P1, the substrate of the second PMOS tube P2, the substrate of the third PMOS tube P3 and the substrate of the fourth PMOS tube P4 are all connected to the first bias voltage V-FDL1;

[0095] The substrate of the first NMOS transistor N1, the substrate of the second NMOS transistor N2, the substrate of the fourth NMOS transistor N4 and the substrate of the fifth NMOS transistor N5 are all connected to the second bias voltage V-FDL2;

[0096] The substrates of the seventh NMOS transistor N7, the eighth NMOS transistor N8, the tenth NMOS transistor N10 and the eleventh NMOS transistor N11 are all connected to the third bias voltage V-FDH;

[0097] The response speed and power consumption of the low-frequency negative resistance unit are achieved by externally regulating the first bias voltage and the second bias voltage, and the response speed and power consumption of the high-frequency negative resistance unit are achieved by regulating the third bias voltage.

[0098] Regarding the working principle of the active negative resistance module, it can be understood that the active negative resistance module 20 provides sufficient signal gain for the passive topology module 10, so that the resonant cavity can oscillate at the frequency corresponding to the peak of the working impedance. The tail MOS of each active core is a tail current tube, and the external control voltage V L With V H , used to control the core on / off, and control power consumption regulation. The bias voltage V connected to the MOS tube substrate FDL1 、V FDL2 、V FDH) is provided by an external circuit, and the substrate voltage (V FDL1 、V FDL2 、V FDH ) can change the threshold voltage of the MOS tube, thereby adjusting the response speed and power consumption of the corresponding MOS tube in the active negative resistance module, and realizing the regulation of the performance of the active negative resistance module. When the voltage-controlled oscillator is working, by switching the low-frequency negative resistance unit and the high-frequency negative resistance unit, the same phase and opposite phase of the voltage / current in the 8-shaped inductor of the passive topology module and the first (second) ring inductor coil can be realized, thereby switching the working mode of the voltage-controlled oscillator.

[0099] Regarding the working principle of the low-frequency negative resistance unit, it can be understood that in the embodiment of the present invention, Fig. 9 The low-frequency negative resistance unit in the circuit adopts a noise circulation structure circuit. When the low-frequency negative resistance unit is working, the voltage phase and current direction of the eight-shaped inductor on one side of the passive topology module and the first (second) ring inductor on the same side are the same, and the respective port voltage waveforms are as follows: Fig.10 As shown, at this time, the drain of the NMOS tube and the gate of the PMOS tube (PL and PPL, PR and PPR) on the same side of the low-frequency negative resistance unit have the same voltage phase, and the NMOS tube and PMOS tube on the same side are coupled together through multiple inductors in the resonant cavity and turned on and off at the same time. At this time, the NMOS tube is degraded by the PMOS tube, and only a small part of the noise current generated by the low-frequency negative resistance unit will be transmitted to the resonant cavity and disrupt the waveform phase, thereby improving the phase noise performance. Figure 4 The two oscillator cores in the resonant cavity are coupled by multiple inductors and connected by a switch circuit. The upper and lower cores are controlled by the mode switching module to oscillate in an even mode (SL and PL are in phase, SR and PR are in phase) or an odd mode (SL and PL are in phase, SR and PR are in phase), corresponding to the two low-frequency operating bands of the voltage-controlled oscillator.

[0100] Regarding the working principle of the high-frequency negative resistance unit, it can be understood that in the embodiment of the present invention, Fig. 9 The high-frequency negative resistance unit in the passive topology module adopts a circuit of the F-type structure. In the high-frequency negative resistance unit, the working cores of the first high-frequency active core and the second high-frequency active core are both a pair of NMOS tubes, wherein the drain of the NMOS tube is connected to the figure-eight inductor coil, and the gate is connected to the first (second) toroidal inductor coil. When the high-frequency active core is working, the voltage phase and current direction of the figure-eight inductor coil and the first (second) toroidal inductor coil in the passive topology module are opposite, and the port voltage waveform is as follows: Fig.11 At this time, the voltage phases of the drain and gate (PL and PPL, PR and PPR) of the NMOS tube are opposite. Figure 4The two oscillator cores in the circuit are coupled by multiple inductors and connected by a switch circuit. The mode switching module controls the upper and lower cores to oscillate in an even mode (SL and PL are in phase, SR and PR are in phase) or an odd mode (SL and PL are in phase, SR and PR are in phase), corresponding to the two high-frequency operating bands of the voltage-controlled oscillator.

[0101] Technical effect analysis: In the fourth solution of the prior art in the background technology, the voltage-controlled oscillator unit, i.e., the negative resistance module, includes 4 cores, of which 2 low-frequency cores are implemented with a noise loop structure, including a pair of cross-coupled NMOS and a pair of PMOS connected to the source; and 2 high-frequency cores are implemented with a pair of NMOS tubes. Compared with the traditional cross-coupled structure, the noise loop structure can effectively suppress the effective noise power of the active device, and in this solution, based on the FDSOI technology, the MOS tube substrate in the active negative resistance module is connected to the bias voltage of the external circuit, and the threshold voltage of the active device can be changed by adjusting the MOS tube substrate bias to adjust the working response speed and power consumption of the voltage-controlled oscillator, so that the performance of the voltage-controlled oscillator is better.

[0102] like Fig.12 As shown, the frequency adjustment module 30 at least includes a variable capacitor group 31 and a digitally controlled capacitor array 32; the digitally controlled capacitor array 32 includes a plurality of digitally controlled capacitors connected in parallel; the variable capacitor group 31 and the digitally controlled capacitor array 32 are connected in parallel.

[0103] Among them, Fig.12 As shown, the variable capacitor group 31 includes a first variable capacitor C11, a second variable capacitor C22, a first capacitor C1, a second capacitor C2, a first resistor R1 and a second resistor R2;

[0104] The first end of the first variable capacitor C11 is connected to the first end of the second variable capacitor C22; the first end of the first variable capacitor C11 and the first end of the second variable capacitor C22 are both connected to the first voltage VC;

[0105] The second end of the first variable capacitor C11 and the first end of the first resistor R1 are both connected to the first end of the first capacitor C1; the second end of the first resistor R1 is connected to the second voltage VDD; the second end of the first capacitor C1 is connected to the first end of the digitally controlled capacitor array;

[0106] The second end of the second variable capacitor C22 and the first end of the second resistor R2 are both connected to the first end of the second capacitor C2; the second end of the second resistor R2 is connected to the second voltage VDD; the second end of the second capacitor C2 is connected to the second end of the digital controlled capacitor array.

[0107] like Fig.12As shown, each of the multiple digital controlled capacitors connected in parallel includes a third capacitor C3, a fourth capacitor C4, a thirteenth NMOS transistor N13, a third resistor R3, a fourth resistor R4 and a NOT gate;

[0108] Wherein, the first end of the third capacitor C3 is connected to the first end of the digitally controlled capacitor array; the second end of the third capacitor C3 and the first end of the third resistor are both connected to the source of the thirteenth NMOS transistor N13;

[0109] The drain of the thirteenth NMOS transistor N13 is connected to the first end of the fourth resistor R4;

[0110] The second end of the third resistor R3 is connected to the second end of the fourth resistor R4; the second end of the third resistor R3 and the second end of the fourth resistor R4 are both connected to the corresponding branch selection switch signal;

[0111] The drain of the thirteenth NMOS transistor N13 is also connected to the first end of the fourth capacitor C4, and the second end of the fourth capacitor C4 is connected to the second end of the digital controlled capacitor array;

[0112] The gate of the thirteenth NMOS tube is connected to the first end of the NOT gate, and the second end of the NOT gate is connected to the branch selection switch signal; the branch selection switch signal is used to control the conduction and closing of a branch where a digital controlled capacitor is located.

[0113] like Fig.12 As shown, the branch selection switch signal is, for example, SW0 connected to the branch where the first digital controlled capacitor is located, and SW2 connected to the branch where the last digital controlled capacitor is located.

[0114] Regarding the working principle of the frequency regulation module, such as Fig.12 As shown, the frequency adjustment module is composed of a variable capacitor group and a digitally controlled capacitor array. The frequency adjustment module is connected to the two ports of each inductor of the passive topology module to change the corresponding frequency of the input impedance peak of the passive topology module. When in use, the selection signal SW0-SW2 is changed to adjust the size and number of digitally controlled capacitors connected to the two ports of the passive topology module. The control voltage VC is connected to the variable capacitor, and adjusting the size of VC can change the capacitance value of the variable capacitor. Through the coordinated adjustment between the variable capacitor and the digitally controlled capacitor, the working impedance peak size of the input impedance of the passive topology module and its corresponding frequency can be accurately changed, thereby realizing the adjustment of the output frequency of the voltage-controlled oscillator.

[0115] Analysis of technical effect: In the fourth solution of the prior art mentioned in the background technology, only one variable capacitor is used for frequency adjustment without adding a capacitor array. Although it can save circuit area, the adjustment accuracy is not high and the quality factor of the resonator is reduced. The embodiment of the present invention adopts a frequency adjustment module composed of multiple digitally controlled capacitors and a variable capacitor group connected in parallel, which can improve the frequency adjustment accuracy and the quality factor of the resonator, thereby improving the application performance of the voltage-controlled oscillator.

[0116] like Fig.13 As shown, the mode switching module 40 includes a fifth PMOS tube, a sixth PMOS tube P6, a seventh PMOS tube P7 and an eighth PMOS tube P8;

[0117] The source of the fifth PMOS tube P5 is connected to the source of the seventh PMOS tube P7; the source of the fifth PMOS tube P5 and the source of the seventh PMOS tube P7 are both connected to the first end (SL end) of the figure eight inductor coil;

[0118] The source of the sixth PMOS tube P6 is connected to the source of the eighth PMOS tube P8; the source of the sixth PMOS tube P6 and the source of the eighth PMOS tube P8 are both connected to the second end (SR end) of the figure eight inductor coil;

[0119] The gate of the fifth PMOS tube P5 is connected to the first control voltage signal (SW);

[0120] The drain of the fifth PMOS tube P5 is connected to the drain of the sixth PMOS tube P6; the drain of the fifth PMOS tube P5 and the drain of the sixth PMOS tube P6 are both connected to the third end (PL end) of the figure eight inductor coil;

[0121] The drain of the seventh PMOS tube P7 is connected to the drain of the eighth PMOS tube P8; the drain of the seventh PMOS tube P7 and the drain of the eighth PMOS tube P8 are both connected to the fourth end (PR end) of the figure eight inductor coil;

[0122] The gate of the eighth PMOS transistor P8 is connected to the first control voltage signal SW;

[0123] The gate of the sixth PMOS transistor P6 is connected to the gate of the seventh PMOS transistor P7; the gate of the sixth PMOS transistor P6 and the gate of the seventh PMOS transistor P7 are connected to the second control voltage signal SWb.

[0124] Regarding the working principle of the mode switching module, the mode switching module is used to change the connection relationship between the upper and lower oscillator cores. The mode switching module consists of two pairs of MOS networks that are controlled in the ON / OFF state. When the first control voltage signal SW is low and the second control voltage signal SWb is high, P5 and P8 are turned on, P6 and P7 are turned off, the SL end is connected to the PL end, and the SR end is connected to the PR end. On the contrary, when the first control voltage signal SW is high and the second control voltage signal SWb is low, P5 and P8 are turned off, P6 and P7 are turned on, the SL end is connected to the PR end, and the SR end is connected to the PL end. Therefore, by changing the control voltages SW and SWb, the connection relationship between SL and PL, SR and PR can be changed, thereby realizing the even mode (SL and PL are in phase, SR and PR are in phase) or odd mode (SL and PL are inverted, SR and PR are inverted) oscillation between the two oscillator cores, and then cooperating with the switching of the low-frequency negative resistance unit and the high-frequency negative resistance unit to realize 4 different working modes. The following is further explained.

[0125] Combination Fig.14 As shown, the working mode 1 is realized by the second control signal V H Turn off the high-frequency negative resistance unit, the first control signal V L The low-frequency negative resistance unit is turned on. In the mode switching module, the first control voltage signal SW is low and the second control voltage signal SWb is high. P5 and P8 are turned on, P6 and P7 are turned off, the SL terminal is connected to the PL terminal, and the SR terminal is connected to the PR terminal, so that the current I S and the current I P In phase (arrow direction points to the right), that is, the low-frequency negative resistance unit is in even mode, and the frequency output by the voltage-controlled oscillator is in the lowest frequency band.

[0126] Combination Fig.14 As shown, the working mode 2 is realized by the second control signal V H Turn off the high-frequency negative resistance unit, the first control signal V L The low-frequency negative resistance unit is turned on. In the mode switching module, the first control voltage signal SW is high and the second control voltage signal SWb is low. P5 and P8 are turned off, P6 and P7 are turned on, the SL terminal is connected to the PR terminal, and the SR terminal is connected to the PL terminal, so that the current I S and the current I P In the reverse direction (one arrow points to the left, the other to the right), that is, the low-frequency negative resistance unit is in odd mode, and the frequency output by the voltage-controlled oscillator is in the second-lowest frequency band.

[0127] Combination Fig.14 As shown, the working mode 3 is realized by the first control signal V L Turn off the low-frequency negative resistance unit, and the second control signal VH The high-frequency negative resistance unit is turned on. In the mode switching module, the first control voltage signal SW is at a low potential and the second control voltage signal SWb is at a high potential. P5 and P8 are turned on, P6 and P7 are turned off, the SL terminal is connected to the PL terminal, and the SR terminal is connected to the PR terminal, so that the current I S and the current I P In phase (arrow direction points to the left), that is, the high-frequency negative resistance unit is in an even mode, and the frequency output by the voltage-controlled oscillator is in a sub-high frequency band.

[0128] Combination Fig.14 As shown, the working mode 3 is realized by the first control signal V L Turn off the low-frequency negative resistance unit, and the second control signal V H The high-frequency negative resistance unit is turned on. In the mode switching module, the first control voltage signal SW is high and the second control voltage signal SWb is low. P5 and P8 are turned off, P6 and P7 are turned on, the SL terminal is connected to the PR terminal, and the SR terminal is connected to the PL terminal, so that the current I S and the current I P In phase (one arrow points to the left and the other to the right), that is, the high-frequency negative resistance unit is in odd mode, and the frequency output by the voltage-controlled oscillator is in the highest high frequency band.

[0129] There is an overlapping interval between each two adjacent frequency bands of the four modes, so the four different frequency bands together form a wide frequency band, thereby realizing a wide frequency adjustment range of the voltage-controlled oscillator.

[0130] Compared with the four prior art solutions mentioned in the background technology, the voltage-controlled oscillator with a wide frequency adjustment range provided by the embodiment of the present invention has the following technical effects:

[0131] 1) Compared with the solution of 4 active negative resistance cores in the prior art, the embodiment of the present invention uses a method of switching low-frequency negative resistance units with high-frequency negative resistance units, so that the voltage phases of the inner and outer ring inductors of a single core of the passive topology module can be in phase or inverse phase, and the mode switching module controls the odd and even modes of the connection relationship between the upper and lower oscillator cores of the passive topology. Only 2 active negative resistance modules need to work at the same time to achieve 4 different working modes. This solution reduces the power consumption of the voltage-controlled oscillator circuit. Compared with other voltage-controlled oscillators, the overall FoM (jitter and power consumption coefficient) of the circuit can be improved under the same phase noise conditions.

[0132] 2) Compared with the solutions in the prior art, the embodiments of the present invention can adjust the threshold voltage of each MOS tube in the active negative resistance module by changing the MOS tube substrate bias, thereby regulating the working response speed and power consumption of the voltage-controlled oscillator.

[0133] 3) Compared with the four-port dual-mode oscillator in the prior art, the embodiment of the present invention has four different working modes, a larger FTR (frequency adjustment range), and a wider application range.

[0134] 4) Compared with the EM hybrid coupled four-mode four-core oscillator using additional capacitors in the prior art, the embodiment of the present invention does not require additional capacitors to achieve four working modes, has smaller parasitics and a larger design space.

[0135] 5) Compared with the four-mode four-core oscillator implemented by mode splitting technology in the prior art, the embodiment of the present invention only needs to work two active negative resistance cores at the same time, the circuit power consumption is lower, and fewer mode switching switches are required.

[0136] Although the present invention is described herein in conjunction with various embodiments, in the process of implementing the claimed invention, those skilled in the art may understand and implement other variations of the disclosed embodiments by viewing the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and "one" or "an" does not exclude multiple situations. A single processor or other unit may implement several functions listed in the claims. Certain measures are recorded in different dependent claims, but this does not mean that these measures cannot be combined to produce good results.

[0137] Although the present invention has been described in conjunction with specific features and embodiments thereof, it is apparent that various modifications and combinations may be made thereto without departing from the spirit and scope of the present invention. Accordingly, this specification and the accompanying drawings are merely exemplary illustrations of the present invention as defined by the appended claims and are deemed to cover any and all modifications, variations, combinations or equivalents within the scope of the present invention. Obviously, those skilled in the art may make various modifications and variations to the present invention without departing from the spirit and scope of the present invention. Thus, the present invention is intended to include such modifications and variations if they fall within the scope of the claims of the present invention and their equivalents.

Claims

1. A voltage-controlled oscillator with a wide frequency adjustment range, characterized in that: include: Passive topology module, active negative resistance module, frequency adjustment module and mode switching module; The active negative resistance module, the frequency adjustment module and the mode switching module are all connected to the passive topology module; The passive topology module includes a plurality of inductors; the plurality of inductors are used to provide a working impedance peak when coupled together; the plurality of inductors include an eight-shaped inductor coil, a first annular inductor coil and a second annular inductor coil; the eight-shaped inductor coil includes a first inductor coil, a second inductor coil and a common inductor coil; the first annular inductor coil surrounds a first portion of the eight-shaped inductor coil to form a first nested inductor coil, and the second annular inductor coil surrounds a second portion of the eight-shaped inductor coil to form a second nested inductor coil; The frequency adjustment module is used to adjust the corresponding frequency of the working impedance peak; The active negative resistance module is used to provide signal gain for the passive topology module so as to assist the passive topology module in completing the resonance function; the mode switching module is used to select and switch between multiple working modes.

2. The voltage-controlled oscillator with a wide frequency adjustment range according to claim 1, characterized in that: The active negative resistance module includes a low-frequency negative resistance unit and a high-frequency negative resistance unit; When the low-frequency negative resistance unit is working and the high-frequency negative resistance unit is turned off, the passive topology module at least realizes the first working mode and the second working mode under the selection control of the mode switching module and the assistance of the frequency adjustment module; When the low-frequency negative resistance unit is turned off and the high-frequency negative resistance unit is working, the passive topology module implements at least the third working mode and the fourth working mode under the selection control of the mode switching module and the assistance of the frequency adjustment module; The first working mode, the second working mode, the third working mode and the fourth working mode respectively cover different resonant frequency ranges; wherein two adjacent working modes have overlapping resonant frequency ranges to form a continuous frequency tuning range.

3. The voltage-controlled oscillator with a wide frequency adjustment range according to claim 2, characterized in that: The first inductor coil comprises at least a first coil winding and a second coil winding; The second inductor coil includes at least a third coil winding and a fourth coil winding; the common inductor coil includes at least a fifth coil winding; The first end of the first coil winding is connected to the first end of the third coil winding; the first end of the first coil winding and the first end of the third coil winding are both connected to the first end of the fifth coil winding; The first end of the second coil winding is connected to the first end of the fourth coil winding; the first end of the second coil winding and the first end of the fourth coil winding are both connected to the second end of the fifth coil winding; The second end of the first coil winding is the first end of the figure eight inductor coil; The second end of the second coil winding is the second end of the figure eight inductor coil; The second end of the third coil winding is the third end of the figure eight inductor coil; The second end of the fourth coil winding is the fourth end of the figure eight inductor coil; The first annular inductor is sleeved around the first coil winding and the second coil winding; The second annular inductor is sleeved around the third coil winding and the fourth coil winding.

4. The voltage-controlled oscillator with a wide frequency adjustment range according to claim 3, characterized in that: The first annular inductor comprises at least a sixth coil winding and a seventh coil winding, and a first end of the sixth coil winding is connected to a first end of the seventh coil winding; The second end of the sixth coil winding is the first end of the first annular inductor; The second end of the seventh coil winding is the second end of the first annular inductor; The second annular inductor comprises at least an eighth coil winding and a ninth coil winding, and a first end of the eighth coil winding is connected to a first end of the ninth coil winding; The second end of the eighth coil winding is the first end of the second annular coil; The second end of the ninth coil winding is the second end of the second annular coil.

5. The voltage-controlled oscillator with a wide frequency adjustment range according to claim 4, characterized in that: The low-frequency negative resistance unit includes a first low-frequency active core and a second low-frequency active core; Wherein, the first low-frequency active core includes a first NMOS tube, a second NMOS tube, a third NMOS tube, a first PMOS tube and a second PMOS tube; The drain of the first NMOS tube is connected to the first end of the figure-eight inductor; the gate of the first NMOS tube is connected to the drain of the second NMOS tube; the source of the first NMOS tube is connected to the source of the first PMOS tube; the drain of the first PMOS tube is connected to the drain of the third NMOS tube; the gate of the first PMOS tube is connected to the first end of the first ring inductor; the source of the third NMOS tube is grounded; the gate of the third NMOS tube is connected to the first control voltage; the first control voltage is used to control the opening and closing of the low-frequency negative resistance unit; The drain of the second NMOS tube is connected to the second end of the figure eight inductor; the gate of the second NMOS tube is connected to the drain of the first NMOS tube; The source of the second NMOS tube is connected to the source of the second PMOS tube; the drain of the second PMOS tube is connected to the drain of the third NMOS tube; the gate of the second PMOS tube is connected to the second end of the first toroidal inductor; The second low-frequency active core includes a fourth NMOS tube, a fifth NMOS tube, a sixth NMOS tube, a third PMOS tube and a fourth PMOS tube; The drain of the fourth NMOS tube is connected to the third end of the figure eight inductor; the gate of the fourth NMOS tube is connected to the drain of the fifth NMOS tube; The source of the fourth NMOS tube is connected to the source of the third PMOS tube; the drain of the third PMOS tube is connected to the drain of the sixth NMOS tube; the gate of the third PMOS tube is connected to the first end of the second ring coil; the source of the sixth NMOS tube is grounded; the gate of the sixth NMOS tube is connected to the first control voltage; The drain of the fifth NMOS tube is connected to the fourth end of the figure eight inductor coil; the gate of the fifth NMOS tube is connected to the drain of the fourth NMOS tube; The source of the fifth NMOS tube is connected to the source of the fourth PMOS tube; the drain of the fourth PMOS tube is connected to the drain of the sixth NMOS tube; and the gate of the second PMOS tube is connected to the second end of the second ring coil.

6. The voltage-controlled oscillator with a wide frequency adjustment range according to claim 5, characterized in that: The high-frequency negative resistance unit includes a first high-frequency active core and a second high-frequency active core; Wherein, the first high-frequency active core includes a seventh NMOS transistor, an eighth NMOS transistor and a ninth NMOS transistor; The drain of the seventh NMOS tube is connected to the first end of the figure-eight inductor; the gate of the seventh NMOS tube is connected to the first end of the first ring inductor; the source of the seventh NMOS tube is connected to the drain of the ninth NMOS tube; the source of the ninth NMOS tube is grounded; the gate of the ninth NMOS tube is connected to the second control voltage; the second control voltage is used to control the opening and closing of the high-frequency negative resistance unit; The drain of the eighth NMOS tube is connected to the second end of the figure-eight inductor; the gate of the eighth NMOS tube is connected to the second end of the first ring-shaped inductor; the source of the eighth NMOS tube is connected to the drain of the ninth NMOS tube; The second high-frequency active core includes a tenth NMOS transistor, an eleventh NMOS transistor and a twelfth NMOS transistor; The drain of the tenth NMOS tube is connected to the third end of the figure-eight inductor coil; the gate of the tenth NMOS tube is connected to the first end of the second ring coil; the source of the tenth NMOS tube is connected to the drain of the twelfth NMOS tube; the source of the twelfth NMOS tube is grounded; the gate of the twelfth NMOS tube is connected to the second control voltage; The drain of the eleventh NMOS tube is connected to the fourth end of the figure-eight inductor coil; the gate of the eleventh NMOS tube is connected to the second end of the second ring coil; the source of the eleventh NMOS tube is connected to the drain of the twelfth NMOS tube.

7. The voltage-controlled oscillator with a wide frequency adjustment range according to claim 6, characterized in that: The substrate of the first PMOS tube, the substrate of the second PMOS tube, the substrate of the third PMOS tube and the substrate of the fourth PMOS tube are all connected to a first bias voltage; The substrate of the first NMOS tube, the substrate of the second NMOS tube, the substrate of the fourth NMOS tube and the substrate of the fifth NMOS tube are all connected to a second bias voltage; The substrate of the seventh NMOS tube, the substrate of the eighth NMOS tube, the substrate of the tenth NMOS tube and the substrate of the eleventh NMOS tube are all connected to a third bias voltage; Among them, the response speed and power consumption of the low-frequency negative resistance unit are achieved by externally regulating the first bias voltage and the second bias voltage, and the response speed and power consumption of the high-frequency negative resistance unit are achieved by regulating the third bias voltage.

8. The voltage-controlled oscillator with a wide frequency adjustment range according to claim 1, characterized in that: The frequency adjustment module at least includes a variable capacitor group and a digitally controlled capacitor array; the digitally controlled capacitor array includes a plurality of digitally controlled capacitors connected in parallel; the variable capacitor group is connected in parallel with the digitally controlled capacitor array; Wherein, the variable capacitor group includes a first variable capacitor, a second variable capacitor, a first capacitor, a second capacitor, a first resistor and a second resistor; Wherein, the first end of the first variable capacitor is connected to the first end of the second variable capacitor; the first end of the first variable capacitor and the first end of the second variable capacitor are both connected to a first voltage; The second end of the first variable capacitor and the first end of the first resistor are both connected to the first end of the first capacitor; the second end of the first resistor is connected to a second voltage; the second end of the first capacitor is connected to the first end of the digitally controlled capacitor array; The second end of the second variable capacitor and the first end of the second resistor are both connected to the first end of the second capacitor; the second end of the second resistor is connected to the second voltage; the second end of the second capacitor is connected to the second end of the digitally controlled capacitor array.

9. The voltage-controlled oscillator with a wide frequency adjustment range according to claim 8, characterized in that: Each of the plurality of digitally controlled capacitors connected in parallel comprises a third capacitor, a fourth capacitor, a thirteenth NMOS transistor, a third resistor, a fourth resistor and a NOT gate; Wherein, the first end of the third capacitor is connected to the first end of the digitally controlled capacitor array; the second end of the third capacitor and the first end of the third resistor are both connected to the source of the thirteenth NMOS tube; The drain of the thirteenth NMOS tube is connected to the first end of the fourth resistor; The second end of the third resistor is connected to the second end of the fourth resistor; The drain of the thirteenth NMOS tube is also connected to the first end of the fourth capacitor, and the second end of the fourth capacitor is connected to the second end of the digitally controlled capacitor array; The gate of the thirteenth NMOS tube is connected to the first end of the NOT gate, and the second end of the NOT gate is connected to the branch selection switch signal; the branch selection switch signal is used to control the conduction and closing of a branch where a digital controlled capacitor is located.

10. The voltage-controlled oscillator with a wide frequency adjustment range according to claim 3, characterized in that: The mode switching module includes a fifth PMOS tube, a sixth PMOS tube, a seventh PMOS tube and an eighth PMOS tube; Wherein, the source of the fifth PMOS tube is connected to the source of the seventh PMOS tube; the source of the fifth PMOS tube and the source of the seventh PMOS tube are both connected to the first end of the figure eight inductor coil; The source of the sixth PMOS tube is connected to the source of the eighth PMOS tube; the source of the sixth PMOS tube and the source of the eighth PMOS tube are both connected to the second end of the figure eight inductor coil; The gate of the fifth PMOS tube is connected to the first control voltage signal; The drain of the fifth PMOS tube is connected to the drain of the sixth PMOS tube; the drain of the fifth PMOS tube and the drain of the sixth PMOS tube are both connected to the third end of the figure eight inductor coil; The drain of the seventh PMOS tube is connected to the drain of the eighth PMOS tube; the drain of the seventh PMOS tube and the drain of the eighth PMOS tube are both connected to the fourth end of the figure-eight inductor coil; The gate of the eighth PMOS tube is connected to the first control voltage signal; The gate of the sixth PMOS tube is connected to the gate of the seventh PMOS tube; the gate of the sixth PMOS tube and the gate of the seventh PMOS tube are connected to the second control voltage signal.

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