A broadband harmonic suppression power amplifier with resistive filter

Abstract

The present invention provides a broadband harmonic suppression power amplifier containing a resistive filter, and relates to the technical field of power amplifiers. The present invention effectively solves the power supply compatibility problem between BJT power units and GaN power units through innovative single-power intelligent reconstruction technology. Ensure that the negative gate voltage required by the GaN power unit is established first and intelligently triggers the drain power supply, reducing the risk of device damage caused by bias disorder. The built-in resistive filter network and cascade control design can adaptively suppress high-frequency harmonic interference, improve signal purity and system electromagnetic compatibility. Through modular circuit integration, while retaining the original power supply interface and heat dissipation structure, the seamless upgrade from BJT to GaN architecture is achieved, reducing the cost and cycle of hardware transformation. Supporting seamless switching of dual-mode power units, the operating frequency range of old equipment is expanded and the output power is enhanced without the need for overall reconstruction, while reducing overall energy consumption.

Description

Technical Field

[0001] The present invention relates to the technical field of power amplifiers, and is specifically a broadband harmonic suppression power amplifier containing a resistive filter. Background Art

[0002] In high-frequency and high-power application scenarios such as radar and communication base stations, semiconductor power devices have undergone technological iterations from BJT to LDMOS and then to GaN. Although GaN devices have significant advantages in efficiency, frequency and power density, there are still a large number of old systems based on BJT architecture in the current equipment (such as a certain type of shipborne warning radar using MRF454 transistors, operating voltage +36V), and its single power supply mode is fundamentally in conflict with the dual bias voltage and timing control requirements required by GaN. The traditional upgrade solution requires a complete reconstruction of the power supply architecture: adding a negative voltage generation circuit, an external timing controller and a multi-stage filtering module, resulting in an increase of more than 300% in hardware modification costs, and it is difficult to be compatible with the original mechanical structure and heat dissipation design. Especially in the military / aviation field with high reliability requirements, complex peripheral circuits will also introduce electromagnetic compatibility risks and reduce the system MTBF (mean time between failures). In addition, the existing GaN drive solution generally relies on the timing synchronization of the independent negative voltage source and the drain power supply. In the case of power fluctuations or failures, it is easy to cause device damage due to bias disorder, which restricts the smooth upgrade of old equipment.

[0003] The above information disclosed in this Background section is only for enhancement of understanding of the background of the present disclosure and therefore it may contain information that does not constitute the prior art that is already known to one of ordinary skill in the art. Summary of the invention

[0004] It is an object of the present invention to provide a broadband harmonic suppression power amplifier containing a resistive filter to solve the problems raised in the above-mentioned background art.

[0005] To achieve the above object, the present invention provides the following technical solutions: A broadband harmonic suppression power amplifier including a resistive filter, specifically comprising: The power supply module is electrically connected to the external power supply and is used to power the entire module power supply; A voltage conversion module, the voltage conversion module is electrically connected to the power supply module, and is used to convert the high voltage input by the power supply module into a low voltage, use the low voltage to control the second control module, and provide a negative gate voltage to the load module; The first control module is electrically connected between the power supply module and the load module, and is used to control the switching state between the power supply module and the load module; A second control module, the second control module is electrically connected between the voltage conversion module and the first control module, and is used to control the on and off of the first control module through the switch cascade logic according to the low voltage signal, so as to form a timing protection mechanism for power supply after the negative pressure is stabilized; A load module, the load module is electrically connected to a voltage conversion module and a first control module.

[0006] Preferably, the output voltage of the power supply module is 36V; The voltage conversion module includes a DC-DC chip and a negative voltage conversion chip, the DC-DC chip and the negative voltage conversion chip are electrically connected, the input voltage of the DC-DC chip is 36V, the output voltage is +5V, the input voltage of the negative voltage conversion chip is +5V, and the output voltage is -5V.

[0007] Preferably, the output end of the negative voltage conversion chip is electrically connected to two voltage divider resistors and then grounded. The voltage divider ratio of the two voltage dividers is 1:1~2:1, and is used to output a continuously adjustable gate voltage of -2V~-4V.

[0008] Preferably, the first control module is a PMOS tube, and its S pole is electrically connected to the power supply module, and the D pole is electrically connected to the D pole of the load module; The second control module is an NMOS tube, and its S pole is grounded, and the D pole is electrically connected to the G pole of the power supply module and the first control module.

[0009] Preferably, two voltage-dividing resistors are electrically connected between the D pole of the second control module and the power supply module, and the voltage-dividing ratio is 1:1-2:1, and the G pole of the first control module is electrically connected between the two voltage-dividing resistors; Three capacitors are connected in parallel between the D pole of the second control module and the power supply module. The other ends of the three capacitors are grounded, and together with the voltage-dividing resistor at the D pole of the second control module, they form a resistive filter for suppressing high-frequency harmonics.

[0010] Preferably, the negative voltage conversion chip is electrically connected to the G-pole of the second control module through a reverse chip.

[0011] Preferably, the reverse chip is powered by +5V output by the DC-DC chip, and its input end is directly electrically connected to the output end of the negative voltage conversion chip, and the output end is electrically connected to the G-pole of the second control module.

[0012] Preferably, the load module comprises a BJT power unit or a GaN power unit and complies with the following electrical connection rules: When the load module is a BJT power unit, its power supply terminal is electrically connected to the D-pole of the first control module; When the load module is a GaN unit, its D pole is electrically connected to the D pole of the first control module, and the G pole is connected to a resistor and then electrically connected between the two voltage divider resistors at the output end of the negative voltage conversion chip.

[0013] Compared with the prior art, the present invention has the following beneficial effects: The present invention effectively solves the power supply compatibility problem between BJT power units and GaN power units through innovative single-power intelligent reconstruction technology. Based on the autonomous timing protection mechanism, it ensures that the negative gate voltage required by the GaN power unit is established first and intelligently triggers the drain power supply, significantly reducing the risk of device damage caused by bias disorder. The built-in resistive filter network and cascade control design can adaptively suppress high-frequency harmonic interference, improve signal purity and system electromagnetic compatibility. Through modular circuit integration, while retaining the original power supply interface and heat dissipation structure, the seamless upgrade from BJT to GaN architecture is achieved, greatly reducing the cost and cycle of hardware transformation. The solution supports seamless switching of dual-mode power units, so that the operating frequency range of old equipment can be greatly expanded without the need for overall reconstruction, the output power is significantly enhanced, and the overall energy consumption is reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic diagram of the module structure of the present invention; Figure 2 The schematic diagram of the circuit of the present invention is shown in FIG. DETAILED DESCRIPTION

[0015] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments.

[0016] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the present invention should be understood by people with ordinary skills in the field to which the present invention belongs. The words "first", "second" and similar words used in the present invention do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0017] Example: See also Figure 1~Figure 2 , the present invention provides a technical solution: A broadband harmonic suppression power amplifier containing a resistive filter, specifically including: a power supply module, a voltage conversion module, a first control module, and a load module.

[0018] The power supply module is electrically connected to the external power supply and can use the LM2679 series DC-DC chip with an output voltage of 36V~50V, which is used to power the entire module power supply. It is omitted in the schematic diagram and is only displayed with a 36V label.

[0019] The voltage conversion module is electrically connected to the power supply module, and is used for converting the high voltage input by the power supply module into a low voltage, using the low voltage to control the second control module, and providing a negative gate voltage to the load module.

[0020] The voltage conversion module includes a DC-DC chip and a negative voltage conversion chip. The DC-DC chip and the negative voltage conversion chip are electrically connected. The input voltage of the DC-DC chip is 36V and the output voltage is +5V. The input voltage of the negative voltage conversion chip is +5V and the output voltage is -5V.

[0021] The output end of the negative voltage conversion chip is electrically connected to two voltage-dividing resistors and then grounded. The voltage-dividing ratio of the two voltage-dividing resistors is 1:1~2:1, and is used to output a continuously adjustable gate voltage of -2V~-4V. The negative voltage conversion chip is electrically connected to the G pole of the second control module through a reverse chip. The reverse chip is powered by the +5V output by the DC-DC chip, and the output end is electrically connected to the G pole of the second control module. A MM3Z5V1ST1G series diode can also be connected between the negative voltage conversion chip and the reverse chip, and the reverse chip can use an SN74LVC1G04 series inverter.

[0022] Specifically, the DC-DC chip can be the WBDY117 series, and the negative voltage conversion chip can be the MAX660ESA series. After the high voltage provided by the power supply module enters this DC-DC chip, it will output a +5V low voltage, which is converted into a -5V low voltage by the negative voltage conversion chip.

[0023] The first control module is a PMOS tube, whose S pole is electrically connected to the power supply module, and D pole is electrically connected to the D pole of the load module. It is electrically connected between the power supply module and the load module, and is used to control the switching state between the power supply module and the load module.

[0024] The second control module is electrically connected between the voltage conversion module and the first control module, and is used to change its own switch state according to the low voltage.

[0025] The second control module is an NMOS tube, and its S pole is grounded, and the D pole is electrically connected to the G pole of the power supply module and the first control module.

[0026] There are two voltage-dividing resistors electrically connected between the D-pole of the second control module and the power supply module, and the voltage-dividing ratio is 1:1~2:1, and the G-pole of the first control module is electrically connected between the two voltage-dividing resistors; Three capacitors are connected in parallel between the D pole of the second control module and the power supply module. The other ends of the three capacitors are grounded, and together with the voltage-dividing resistor at the D pole of the second control module, they form a resistive filter for suppressing high-frequency harmonics.

[0027] The load module is electrically connected to the voltage conversion module and the first control module. The load module includes a BJT power unit or a GaN power unit, and complies with the following electrical connection rules: When the load module is a BJT power unit, its power supply terminal is electrically connected to the D-pole of the first control module; When the load module is a GaN unit, its D pole is electrically connected to the D pole of the first control module, and the G pole is connected to a resistor and then electrically connected between the two voltage divider resistors at the output end of the negative voltage conversion chip.

[0028] Here, different power units are used with different PIN-PIN connection relationships because the characteristics of two different power units are taken into consideration. The BJT power unit is self-biased, that is, there is only a single voltage when working. The voltage of a high-power BJT unit is generally +36V or +40V, there is no timing requirement, and no external gate voltage needs to be added; the GaN power unit is externally biased, requiring the G pole to have a negative gate voltage, otherwise it will be damaged, and the D pole needs to have a positive drain voltage of +28V~+48V; the GaN unit has a timing requirement for power-on. When powering on, a negative gate voltage must be added first, and then a positive drain voltage must be added, otherwise it will be damaged.

[0029] Therefore, in this solution, the specific power supply logic is: After the power supply module is connected to the external power supply, it outputs a high voltage of +36V. This high voltage is input into the DC-DC chip on the one hand, and directly added to the S pole of the first control module on the other hand. It can be understood that for the PMOS tube, the voltage of the G pole is less than the voltage of the S pole, the PMOS tube is turned on, and vice versa, so the first control module is in a disconnected state at this time. The +36V high voltage generates a +5V low voltage after passing through the DC-DC chip, and generates a -5V low voltage after negative voltage conversion. This -5V will not only generate a gate voltage of about -3.2V after voltage division to provide it to the G pole of the GaN power unit (equivalent to a circuit breaker when the load module is a BJT power unit), but also generate a +5V low voltage after passing through the inverter. This +5V low voltage is added to the G pole of the second control module and can only be used for control without driving capability. It can be understood that the second control module is an NMOS tube, and the control logic is opposite to that of the PMOS tube, that is, the first control module. The voltage of the G pole is greater than the voltage of the S pole, and the NMOS tube is turned on, otherwise it is turned off. Therefore, it is turned off before the +5V low voltage is applied, and it is turned on after the +5V voltage is applied.

[0030] After the first control module is turned on, the +36V high voltage that was originally open to the ground will reach the ground through the D and G poles of the NMOS tube, and will generate a voltage lower than +36V (usually can be set to around +25V) between the two voltage-dividing resistors connected to the D pole of the first control module. This voltage of around +25V is added to the G pole of the second control module. At this time, the G pole voltage +25V of the second control module is less than the S pole +36V, and the S pole to the D pole is turned on, and +36V can be added to the load module, which is the input end of the BJT power unit or the D pole of the GaN power unit.

[0031] Through this method, when the BJT power unit is replaced with the GaN power unit, it is ensured that the GaN power unit can control a series of circuits through the negative voltage only when the negative voltage of the G pole is applied, so that the S pole to the D pole is turned on, and then the +36V high voltage is turned on to the D pole of the GaN module, so that the GaN module can work normally, thereby avoiding damage to the GaN power unit and realizing the timing control method.

[0032] Since some simple electronic components and circuits, such as voltage divider resistors and LC resonant circuits, the effect realized is mature and will not be described here.

[0033] In summary, the present invention effectively solves the power supply compatibility problem between BJT power units and GaN power units through innovative single-power intelligent reconstruction technology. Based on the autonomous timing protection mechanism, it ensures that the negative gate voltage required by the GaN power unit is established first and intelligently triggers the drain power supply, significantly reducing the risk of device damage caused by bias disorder. The built-in resistive filter network and cascade control design can adaptively suppress high-frequency harmonic interference, improve signal purity and system electromagnetic compatibility. Through modular circuit integration, while retaining the original power supply interface and heat dissipation structure, the seamless upgrade from BJT to GaN architecture is achieved, greatly reducing the cost and cycle of hardware transformation. The solution supports seamless switching of dual-mode power units, so that the operating frequency range of old equipment can be greatly expanded without the need for overall reconstruction, the output power is significantly enhanced, and the overall energy consumption is reduced.

[0034] The above formulas are all dimensionless and numerical calculations. The formula is a formula for the most recent real situation obtained by collecting a large amount of data and performing software simulation. The preset parameters in the formula are set by technicians in this field according to actual conditions.

[0035] The above embodiments may be implemented in whole or in part by software, hardware, firmware or any other combination thereof. When implemented by software, the above embodiments may be implemented in whole or in part in the form of a computer program product. Those skilled in the art may appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein may be implemented by electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed by hardware or software methods depends on the specific application and design constraints of the technical solution.

[0036] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, and may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0037] The above description is only a specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application.

Claims

1. A broadband harmonic suppression power amplifier including a resistive filter, characterized in that: Specifically include: A power supply module, the power supply module is electrically connected to an external power supply and is used to supply power to the entire module power supply; A voltage conversion module, the voltage conversion module is electrically connected to the power supply module, and is used to convert the high voltage input by the power supply module into a low voltage, use the low voltage to control the second control module, and provide a negative gate voltage to the load module; A first control module, the first control module is electrically connected between the power supply module and the load module, and is used to control whether the power supply module and the load module are conductive; A second control module, the second control module is electrically connected between the voltage conversion module and the first control module, and is used to control the on and off of the first control module through the switch cascade logic according to the low voltage signal, so as to form a timing protection mechanism for power supply after the negative pressure is stabilized; A load module is electrically connected to the voltage conversion module and the first control module.

2. A broadband harmonic suppression power amplifier with a resistive filter according to claim 1, characterized in that: The output voltage of the power supply module is 36V; The voltage conversion module includes a DC-DC chip and a negative voltage conversion chip, the DC-DC chip and the negative voltage conversion chip are electrically connected, the input voltage of the DC-DC chip is 36V, the output voltage is +5V, the input voltage of the negative voltage conversion chip is +5V, and the output voltage is -5V.

3. A broadband harmonic suppression power amplifier with a resistive filter according to claim 2, characterized in that: The output end of the negative voltage conversion chip is electrically connected to two voltage-dividing resistors and then grounded. The voltage-dividing ratio of the two voltage-dividing resistors is 1:1-2:1, and is used to output a continuously adjustable gate voltage of -2V--4V.

4. The broadband harmonic suppression power amplifier with a resistive filter according to claim 2, characterized in that: The first control module is a PMOS tube, the S pole of which is electrically connected to the power supply module, and the D pole of which is electrically connected to the D pole of the load module; The second control module is an NMOS tube, the S pole of which is grounded, and the D pole is electrically connected to the power supply module and the G pole of the first control module.

5. A broadband harmonic suppression power amplifier with a resistive filter according to claim 4, characterized in that: Two voltage-dividing resistors are electrically connected between the D pole of the second control module and the power supply module, and the voltage-dividing ratio is 1:1-2:1, and the G pole of the first control module is electrically connected between the two voltage-dividing resistors; Three capacitors are connected in parallel between the D pole of the second control module and the power supply module. The other ends of the three capacitors are grounded, and together with the voltage-dividing resistor at the D pole of the second control module, they form a resistive filter for suppressing high-frequency harmonics.

6. A broadband harmonic suppression power amplifier with a resistive filter according to claim 4, characterized in that: The negative pressure conversion chip is electrically connected to the G pole of the second control module through a reverse chip.

7. A broadband harmonic suppression power amplifier with a resistive filter according to claim 6, characterized in that: The reverse chip is powered by +5V output by the DC-DC chip, and its input end is directly electrically connected to the output end of the negative voltage conversion chip, and its output end is electrically connected to the G pole of the second control module.

8. The broadband harmonic suppression power amplifier with a resistive filter according to claim 3, characterized in that: The load module includes a BJT power unit or a GaN power unit and complies with the following electrical connection rules: When the load module is a BJT power unit, its power supply end is electrically connected to the D pole of the first control module; When the load module is a GaN unit, its D pole is electrically connected to the D pole of the first control module, and its G pole is connected to a resistor and then electrically connected between two voltage-dividing resistors at the output end of the negative voltage conversion chip.

Images