Heating plate and method of manufacturing a heating plate

Abstract

Disclosed is a heating plate for supporting and heating a substrate, the heating plate comprising: a base layer on which the substrate is disposed; the heating wire layer is positioned below the base layer and comprises a transition metal material and a metal compound; and a protective layer under the heating wire layer and including a ceramic material and an additive material, where the additive material melts at a lower temperature than the ceramic material and the transition metal material, and the metal bond is a material produced by bonding components included in the transition metal material and the additive material.

Description

Technical Field

[0001] The present invention relates to a heating plate for processing a substrate and a method of manufacturing a heating plate. Background Art

[0002] In order to manufacture a semiconductor device or a flat panel display panel, various processes such as deposition, photography, etching and cleaning are required. Among these processes, the photography process includes a coating process in which a photosensitive liquid (such as a photoresist) is applied to a substrate surface to form a film, an exposure process in which a circuit pattern is transferred to the film formed on the substrate, and a development process in which the film formed on the substrate is selectively removed from an exposure area or an area opposite to the exposure area. In addition, a heat treatment process is performed before and after the coating process, the exposure process and the development process.

[0003] Here, the heat treatment process is performed by transferring the substrate to the heat treatment chamber and heating the transferred substrate. In this case, in the related art, the substrate is mounted on a heating plate and heat treatment is performed by receiving heat from the heated heating plate.

[0004] A conventional heating plate for heating a substrate is formed to uniformly heat the entire substrate, and in order to uniformly heat the entire area of ​​the substrate, the resistance of the heating wires mounted on the heating plate needs to be adjusted so that each heating wire is heated to a uniform temperature.

[0005] On the other hand, there is a conventional method of removing a portion of the volume by emitting laser light to a heating filament that is not uniformly formed in line width or thickness, but this method is difficult to uniformly apply to the entire heating filament, and thus it is difficult to finely control the resistance of the heating filament. Summary of the invention

[0006] The present invention is directed to providing a heating plate capable of easily adjusting the resistance of a heating wire for heat-treating a substrate and a method of manufacturing the heating plate.

[0007] The objects of the present invention are not limited thereto, and other objects not mentioned will be clearly understood from the following description by those skilled in the art.

[0008] An exemplary embodiment of the present invention provides a heating plate for supporting and heating a substrate, the heating plate comprising: a base layer on which the substrate is placed; a heating wire layer located below the base layer and comprising a transition metal material and a metal binder; and a protective layer located below the heating wire layer and comprising a ceramic material and an additive material, wherein the additive material melts at a lower temperature than the ceramic material and the transition metal material, and the metal binder is a material produced by combining components contained in the transition metal material and the additive material.

[0009] According to an exemplary embodiment, the heating wire layer may include an upper layer including a transition metal material and a lower layer including the transition metal material and a metal binder, and the upper layer may not be provided with the metal binder.

[0010] According to example embodiments, the melting point of the additive material may be lower than the melting point of the transition metal material.

[0011] According to an exemplary embodiment, the heating wire layer may include a noble metal, a platinum group metal, or an alloy of a noble metal and a platinum group metal.

[0012] According to an exemplary embodiment, the heating wire layer may further include a ceramic material and a heat dissipation material.

[0013] According to an exemplary embodiment, the heat dissipation material may be aluminum oxide.

[0014] According to an exemplary embodiment, the protective layer includes silicon dioxide as a ceramic material and includes PbO, V 2 O 2 and TeO 2 Any one of the above can be used as an additive material.

[0015] According to an exemplary embodiment, the protection layer may further include a heat dissipation material.

[0016] According to an exemplary embodiment, the heat dissipation material may be aluminum oxide.

[0017] According to an exemplary embodiment, the heating wire layer may be powered to be heated, and heat generated in the heating wire layer may be conducted to the substrate through the base layer.

[0018] Another exemplary embodiment of the present invention provides a method for manufacturing a heating plate for heat treating a substrate, the method comprising: a base preparation operation, which prepares a base layer; a heating wire layer forming operation, which forms a heating wire layer including a transition metal material on the base layer; a protective layer forming operation, which forms a protective layer including a ceramic material and an additive material to cover the heating wire layer; and a resistance adjusting operation, which adjusts the resistance of the heating wire layer, wherein in the resistance adjusting operation, the heating wire layer is heated to a temperature or higher temperature at which the additive material melts in the protective layer, and the melted additive material combines with the transition metal material in the heating wire layer to form a metal bond, thereby adjusting the resistance of the heating wire layer.

[0019] According to an exemplary embodiment, in the resistance adjustment operation, a laser may be emitted to penetrate the ceramic material of the protective layer to heat the heating wire layer.

[0020] According to an exemplary embodiment, a metal bond may be formed at an interface where the heating wire layer and the protective layer are adjacent.

[0021] According to example embodiments, the melting point of the additive material may be lower than the melting point of the transition metal material.

[0022] According to an exemplary embodiment, the heating wire layer may include a noble metal, a platinum group metal, or an alloy of a noble metal and a platinum group metal.

[0023] According to an exemplary embodiment, the heating wire layer may further include a ceramic material and a heat dissipation material.

[0024] According to an exemplary embodiment, the protective layer includes silicon dioxide as a ceramic material and includes PbO, V 2 O 2 and TeO 2 Any one of the above can be used as an additive material.

[0025] According to an exemplary embodiment, the heating wire layer forming operation may include: a heating wire layer printing operation of printing the heating wire layer based on the base layer; and a heat treatment operation of heat-treating the printed heating wire layer.

[0026] According to an exemplary embodiment, the method may further include an insulating layer forming operation of forming an insulating layer between the base layer and the heating wire layer, wherein the insulating layer forming operation is performed between the substrate preparing operation and the heating wire layer forming operation and is performed when the base layer includes a conductive material.

[0027] Another exemplary embodiment of the present invention provides a method for manufacturing a heating plate for heat-treating a substrate, the method comprising: a substrate preparation operation, which prepares a base layer; an insulating layer forming operation, which forms an insulating layer on the base layer; a heating wire layer forming operation, which forms a heating wire layer including a transition metal material, a ceramic material and a heat dissipation material on the insulating layer, wherein the heating wire layer is printed on the insulating layer, the printed heating wire layer is heat-treated, and the heating wire layer includes a noble metal, a platinum group metal, or an alloy of a noble metal and a platinum group metal; a protective layer forming operation, which forms a protective layer including a ceramic material and an additive material to cover the heating wire layer, wherein the melting point of the additive material is lower than the melting point of the transition metal material, the protective layer uses silicon dioxide as a ceramic material, and uses PbO, V 2 O 2 and TeO 2 as an additive material; and a resistance adjusting operation, which adjusts the resistance of the heating wire layer, wherein in the resistance adjusting operation, a laser penetrates the ceramic material of the protective layer to heat the heating wire layer to a temperature or higher temperature at which the additive material melts in the protective layer, and the melted additive material combines with the transition metal material of the heating wire layer to form a metal bond at an interface adjacent to the heating wire layer and the protective layer, thereby adjusting the resistance of the heating wire layer.

[0028] The present invention has the effect of facilitating adjustment of the resistance of a heating wire for heat-treating a substrate.

[0029] The effects of the present invention are not limited to the above-mentioned effects, and those skilled in the art can clearly understand unmentioned effects from the present specification and the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The various features and advantages of the non-limiting exemplary embodiments of the present specification will become apparent upon reading the detailed description in conjunction with the accompanying drawings. The accompanying drawings are provided for illustrative purposes only and should not be construed as limiting the scope of the claims. Unless explicitly stated, the accompanying drawings are not to be considered drawn to scale. Various dimensions in the accompanying drawings may be exaggerated for clarity.

[0031] Figure 1 is a perspective view schematically illustrating a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0032] Figure 2 yes Figure 1 Front view of a substrate processing apparatus.

[0033] Figure 3 yes Figure 1 A top plan view of a coating block in a substrate processing apparatus.

[0034] Figure 4 yes Figure 1 A top plan view of a developer block in a substrate processing apparatus.

[0035] Figure 5 It is schematically shown Figure 3 A top plan view of the transfer robot.

[0036] Figure 6 It is schematically shown Figure 3 or Figure 4 A top plan view of an example of a thermal processing chamber.

[0037] Figure 7 yes Figure 6 Front view of the heat treatment chamber.

[0038] Figure 8 It is schematically shown Figure 3 or Figure 4 A cross-sectional view of one example of a liquid handling chamber.

[0039] Fig. 9 yes Figure 7 A partial cross-sectional view of a heating plate through a longitudinal cut is shown.

[0040] Fig.10 is a flow chart of a method for manufacturing a heating plate according to an exemplary embodiment of the present invention.

[0041] Figures 11 to 13 is based on Fig.10 A partial cross-sectional view of a heating plate showing the sequence of the heating plate manufacturing method. DETAILED DESCRIPTION

[0042] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. Exemplary embodiments are provided so that the present disclosure will be thorough and will fully convey the scope to those skilled in the art. Many specific details, such as examples of specific components, devices, and methods, are set forth to provide a thorough understanding of the embodiments of the present disclosure. It will be apparent to those skilled in the art that specific details need not be employed, that exemplary embodiments may be implemented in many different forms, and that neither should be construed as limiting the scope of the present disclosure. In some exemplary embodiments, well-known processes, well-known device structures, and well-known techniques are not described in detail.

[0043] The terms used herein are only used for the purpose of describing specific exemplary embodiments, and are not restrictive. As used herein, unless the context clearly indicates otherwise, the plural form may also be intended to be included when the quantity is not specified. The terms "include", "comprise" and "have" are inclusive, and therefore specify the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or their groups. Unless specifically identified as an execution order, the method steps, processes and operations described herein should not be interpreted as necessarily requiring them to be performed in the specific order discussed or described. It should also be understood that additional or alternative steps can be adopted.

[0044] When an element or layer is referred to as being "on," "engaged," "connected," or "coupled" to another element or layer, it may be directly "on," "engaged," "connected," or "coupled" to the other element or layer, or there may be intermediate elements or layers. Conversely, when an element is referred to as being "directly on," "directly engaged," "directly connected," or "directly coupled" to another element or layer, there may be no intermediate elements or layers. Other words used to describe the relationship between elements should be interpreted in a similar manner (e.g., "between" versus "directly between," "adjacent" versus "directly adjacent," etc.). As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0045] Although the terms first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms can only be used to distinguish an element, component, region, layer and / or section from another region, layer or section. Unless the context clearly indicates, the terms such as "first", "second" and other numerical terms used herein do not imply sequence or order. Therefore, without departing from the teaching of the exemplary embodiment, the first element, first component, first region, first layer or first section discussed below can be referred to as the second element, second component, second region, second layer or second section.

[0046] For ease of describing the relationship of one element or feature to another element or feature as shown in the figures, spatially relative terms such as "inside", "outside", "below", "below", "below", "above", and "above" may be used herein. In addition to the orientations described in the figures, spatially relative terms may be intended to cover different orientations of the device in use or operation. For example, if the device in the accompanying drawings is flipped, elements described as being "below" or "below" other elements or features will be oriented "above" the other elements or features. Therefore, the exemplary term "below" can cover both above and below orientations. The device can be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein are interpreted accordingly.

[0047] When the terms "same" or "equivalent" are used in the description of exemplary embodiments, it should be understood that some imprecision may exist. Therefore, when one element or value is referred to as being the same as another element or value, it should be understood that the element or value is the same as the other element or value within a manufacturing or operating tolerance range (e.g., ±10%).

[0048] When the term "about" or "substantially" is used in conjunction with a numerical value, it is understood that the relevant numerical value includes a manufacturing or operating tolerance (e.g., 10%) around the numerical value. In addition, when the words "approximately" and "substantially" are used in conjunction with a geometric shape, it is understood that the accuracy of the geometric shape is not required, but the latitude of the shape is within the scope of the present disclosure.

[0049] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the example embodiments belong. It should also be understood that terms (including those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless explicitly defined as such in this article.

[0050] In the exemplary embodiments of the present invention, a wafer will be described as an example of an object to be processed. However, the technical spirit of the present invention can also be applied to an apparatus for processing other types of substrates in addition to the wafer.

[0051] Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

[0052] Figure 1 is a perspective view schematically showing a substrate processing apparatus according to an exemplary embodiment of the present invention, and Figure 2 yes Figure 1 Front view of a substrate processing apparatus. Figure 3 yes Figure 1 A top plan view of a coating block in a substrate processing apparatus, and Figure 4 yes Figure 1 A top plan view of a developer block in a substrate processing apparatus.

[0053] refer to Figures 1 to 4 , the substrate processing device 10 includes an indexing module 100, a processing module 300, and an interface module 500. According to an exemplary embodiment, the indexing module 100, the processing module 300, and the interface module 500 are arranged in a row in sequence. Hereinafter, the arrangement direction of the indexing module 100, the processing module 300, and the interface module 500 is defined as a first direction 12, a direction perpendicular to the first direction 12 when viewed from above is defined as a second direction 14, and a direction perpendicular to both the first direction 12 and the second direction 14 is defined as a third direction 16.

[0054] The index module 100 is provided to transfer the substrate W between the container F containing the substrate W therein and the process module 300. The longitudinal direction of the index module 100 is provided in the second direction 14. The index module 100 includes a load port 110 and an index frame 130. The container F containing the substrate W is placed on the load port 110. The load port 110 is located at an opposite side of the process module 300 relative to the index frame 130. A plurality of load ports 110 may be provided, and the plurality of load ports 110 may be provided along the second direction 14.

[0055] In an example, an airtight container F such as a front opening pod (FOUP) may be used as the container F. The container F may be placed on the load port 110 by a transfer tool (not shown) such as an overhead transfer device, an overhead conveyor, or an automated guided vehicle or by an operator.

[0056] The indexing robot 132 is disposed inside the indexing frame 130. Inside the indexing frame 130, a guide rail 136 is disposed. The longitudinal direction of the guide rail 136 is disposed in the second direction 14. The indexing robot 132 is mounted on the guide rail 136 so as to be movable along the guide rail 136. The indexing robot 132 includes a hand 132a on which the substrate W is placed. The hand 132a may be disposed to be movable forward and backward, linearly movable along the third direction, and rotationally movable about an axis in the third direction 16.

[0057] The process module 300 performs a coating process and a developing process on the substrate W. The process module 300 includes a coating block 300a and a developing block 300b.

[0058] Before the exposure process, the coating block 300a performs a coating process on the substrate W. After the exposure process, the developing block 300b performs a developing process on the substrate W. A plurality of coating blocks 300a are provided. A plurality of coating blocks 300a can be provided to be stacked on top of each other. A plurality of developing blocks 300b are provided. A plurality of developing blocks 300b can be provided to be stacked with each other. In one example, two coating blocks 300a are provided, and two developing blocks 300b are provided. A plurality of coating blocks 300a can be positioned below the developing block 300b.

[0059] In one example, a plurality of coating blocks 300a may be provided with structures that are identical to each other. The film applied to substrate W in each of the plurality of coating blocks 300a may be a film of the same type. Alternatively, the film applied to substrate W by each coating block 300a may be a film of different types. The film applied to substrate W includes a photoresist film. The film applied to substrate W may also include an antireflection film. Alternatively, the film applied to substrate W may also include a protective film.

[0060] In addition, the two developing blocks 300b may be provided with structures identical to each other. The developer supplied to the substrate W in the plurality of developing blocks 300b may be the same type of liquid. Alternatively, the developer supplied to the substrate W may be a different type of developer, depending on the developing block 300b. For example, a process for removing a light irradiated area in a register film area on the substrate W may be performed in one of the two developing blocks 300b, and a process for removing a non-irradiated area may be performed in another of the two developing blocks 300b.

[0061] refer to Figure 3 , the coating block 300 a includes a buffer unit 310 , a cooling unit 320 , a hydrophobizing chamber 340 , a transfer chamber 350 , a heat treatment chamber 360 , and a liquid treatment chamber 380 .

[0062] The buffer unit 310, the cooling unit 320, and the hydrophobizing chamber 340 are disposed adjacent to the indexing module 100. The hydrophobizing chamber 340 and the buffer unit 310 may be disposed sequentially along the second direction 14. In addition, the cooling unit 320 and the buffer unit 310 may be disposed to be stacked on top of each other in a vertical direction.

[0063] The buffer unit 310 includes one or more buffers 312. When multiple buffers 312 are provided, the multiple buffers 312 can be arranged to be stacked on top of each other. The buffer 312 provides a space for the substrate W to stay when the substrate W is transferred between the indexing module 100 and the processing module 300. The hydrophobizing chamber 340 provides a hydrophobizing treatment to the surface of the substrate W. The hydrophobizing treatment can be performed before the coating process is performed on the substrate W. The hydrophobizing treatment can be completed by supplying a hydrophobic gas to the substrate W when the substrate W is heated. The cooling unit 320 cools the substrate W. The cooling unit 320 includes one or more cooling plates. When multiple cooling plates are provided, the multiple cooling plates can be arranged to be stacked on top of each other. In one example, the cooling unit 320 can be arranged below the buffer unit 310. The cooling plate can have a flow path, and the coolant flows through the flow path. The substrate W after the hydrophobizing treatment can be cooled on the cooling plate.

[0064] The transfer mechanism 330 is provided between the hydrophobizing chamber 340 and the buffer unit 310 and between the hydrophobizing chamber 340 and the cooling unit 320. The transfer mechanism 330 is provided for transferring the substrate W between the buffer unit 310, the hydrophobizing chamber 340, and the cooling unit 320.

[0065] The conveying mechanism 330 includes a hand 332 on which the substrate W is placed, and the hand 332 can be arranged to be movable forward and backward, rotatable about the third direction 16, and movable along the third direction 16. In one example, the conveying mechanism 330 moves in the third direction 16 along the guide rail 334. The guide rail 334 extends from the coating block located at the lowest one of the coating blocks 300a to the developing block located at the highest one of the developing blocks 300b. This allows the conveying mechanism 330 to convey the substrate W between the blocks 300a and 300b disposed on different layers. For example, the conveying mechanism 330 can convey the substrate W between the coating blocks 300a and 300b disposed on different layers. The conveying mechanism 330 can also convey the substrate W between the coating block 300a and the developing block 300b.

[0066] In addition, another transfer unit 331 may be further provided on the side opposite to the side where the hydrophobizing chamber 340 is provided with respect to the buffer unit 310. Another transfer unit 331 may be provided to transfer the substrate W between the buffer unit 310 and the cooling unit 320 provided in the same blocks 300a and 300b. In addition, another transfer unit 331 may be provided to transfer the substrate W between the buffer unit 310 and the cooling unit 320 provided in different blocks 300a and 300b.

[0067] The transfer chamber 350 is disposed such that its longitudinal direction is parallel to the first direction 12. One end of the transfer chamber 350 may be located adjacent to the buffer unit 310 and / or the cooling unit 320. The other end of the transfer chamber 350 may be located adjacent to the interface module 500.

[0068] A plurality of heat treatment chambers 360 are provided. Some of the heat treatment chambers 360 are arranged along the first direction 12. In addition, some of the heat treatment chambers 360 may be stacked along the third direction 16. The heat treatment chambers 360 may all be located on one side of the transfer chamber 350.

[0069] The liquid treatment chamber 380 performs a liquid film forming process to form a liquid film on the substrate W. In one example, the liquid film forming process includes a resist film forming process. The liquid film forming process may include an anti-reflective film forming process. Optionally, the liquid film forming process may also include a protective film forming process. A plurality of liquid treatment chambers 380 are provided. The liquid treatment chambers 380 may be located on opposite sides of the thermal treatment chamber 360. For example, all thermal treatment chambers 380 may be located on the other side of the transfer chamber 350. The liquid treatment chambers 380 are arranged side by side along the first direction 12. Optionally, some of the liquid treatment chambers 380 may be stacked along the third direction 16.

[0070] In one example, the liquid processing chamber 380 includes a front liquid processing chamber 380 a and a rear liquid processing chamber 380 b . The front liquid processing chamber 380 a is disposed relatively close to the index module 100 , and the rear liquid processing chamber 380 b is disposed further close to the interface module 500 .

[0071] The front-end liquid processing chamber 380a applies the first liquid to the substrate W, and the rear-end liquid processing chamber 380b applies the second liquid to the substrate W. The first liquid and the second liquid may be different types of liquids. In an embodiment, the first liquid may be a liquid for forming an anti-reflection layer, and the second liquid may be a liquid for forming a photoresist film. The photoresist film may be formed on a substrate W that has been coated with an anti-reflection film. Alternatively, the first liquid may be a liquid for forming a photoresist film, and the second liquid may be a liquid for forming an anti-reflection film. In this case, the anti-reflection film may be formed on a substrate W on which a photoresist is formed. Alternatively, the first liquid and the second liquid may be the same type of liquid, and they may both be liquids for forming a photoresist film.

[0072] refer to Figure 4 , the developing block 300b includes a buffer unit 310, a cooling unit 320, a conveying chamber 350, a heat treatment chamber 360, and a liquid treatment chamber 380. The arrangement of the buffer unit 310, the cooling unit 320, the conveying chamber 350, the heat treatment chamber 360, and the liquid treatment chamber 380 in the developing block 300b may be the same as the arrangement of the buffer unit 310, the cooling unit 320, the conveying chamber 350, the heat treatment chamber 360, and the liquid treatment chamber 380 in the coating block 300a. When viewed from above, the buffer unit 310, the cooling unit 320, the conveying chamber 350, the heat treatment chamber 360, and the liquid treatment chamber 380 in the developing block 300b and the buffer unit 310, the cooling unit 320, the conveying chamber 350, the heat treatment chamber 360, and the liquid treatment chamber 380 in the coating block 300a may be disposed in an overlapping position.

[0073] The heat treatment chamber 360 performs a heating process on the substrate W. The heating process includes a post-exposure baking process performed on the substrate W after the exposure process is completed, and a hard baking process performed on the substrate W after the development process is completed.

[0074] The liquid processing chamber 380 performs a developing process by supplying a developer onto the substrate W and developing the substrate W.

[0075] exist Figure 3 or Figure 4, the transfer chamber 350 is provided with a transfer robot 351. The transfer robot 351 transfers the substrate W between the buffer unit 310, the cooling unit 320, the heat treatment chamber 360, the liquid treatment chamber 380, and the buffer unit 510 or the cooling unit 520 of the interface module 500. In one example, the transfer robot 351 includes a hand 352 on which the substrate W is placed. The hand 352 may be configured to be movable forward and backward, rotatable about the third direction 16, and movable along the third direction 16. A guide rail 356 is provided in the transfer chamber 350, the longitudinal direction of the guide rail being parallel to the first direction 12, and the transfer robot 351 may be configured to be movable on the guide rail 356.

[0076] Figure 5 is a diagram showing an example of a hand of a transfer robot. Figure 5 , the hand 352 includes a base 352a and a support protrusion 352b. The base 352a may have a circular ring shape in which a portion of the circumference is curved. The base 352a has an inner diameter larger than the diameter of the substrate W. The support protrusion 352b extends inwardly from the base 352a. A plurality of support protrusions 352b are provided, and support an edge region of the substrate W. In one example, the support protrusions 352b may be provided in four equally spaced rows.

[0077] Figure 6 It is schematically shown Figure 3 or Figure 4 A top plan view of an example of a thermal processing chamber, and Figure 7 yes Figure 6 Front view of the heat treatment chamber.

[0078] refer to Figure 6 and Figure 7 The heat treatment chamber 360 includes a shell 361 , a heating unit 363 and a transfer plate 364 .

[0079] The housing 361 is arranged in a substantially rectangular parallelepiped shape. An inlet opening (not shown) is formed in the side wall of the housing 361, and the substrate W enters and exits through the inlet opening. The inlet opening can be kept open. Alternatively, a door (not shown) can be provided to open and close the inlet opening. The heating unit 363 and the conveying plate 364 are arranged in the housing 361.

[0080] The heating unit 363 includes a heating plate 363 a , lift pins 363 e , and a cover 363 c .

[0081] The heating plate 363a has a substantially circular shape when viewed from above. The heating plate 363a may have a larger diameter than the substrate W.

[0082] The heating plate 363a supports the liquid-treated substrate W. In this case, the liquid-treated substrate W can be transferred from the transfer plate 364. The heating plate 363a can be provided with a plurality of holes, and the lifting pins 363e are connected to these holes. When powered, the heating plate 363a is heated. The heated heating plate 363a can heat the liquid-treated substrate W to soft bake or hard bake the liquid. When viewed from a cross section with a longitudinal cut, the heating plate 363a may include a base layer 363a1, an insulating layer 363a5, a heating wire layer 363a2, a protective layer 363a3 and a metal bond, and this will be described in more detail later.

[0083] The lift pins 363e are provided to communicate with the heating plate 363a. The lift pins 363e are provided to be movable in the up-down direction along the third direction 16. The lift pins 363e receive the substrate W from the transfer robot 351 and place the received substrate W downward on the heating plate 363a, or lift the substrate W from the heating plate 363a and transfer the substrate W to the transfer robot 351. According to an example, three lift pins 363e may be provided.

[0084] The cover 363c has a space with an open lower portion therein. The cover 363c is located above the heating plate 363a and is moved in the vertical direction by the driver 363d. The space formed by the cover 363c and the heating plate 363a according to the movement of the cover 363c is set as a heating space for heating the substrate W.

[0085] The transfer plate 364 is provided in a substantially disk-shaped shape and has a diameter corresponding to the diameter of the substrate W. A notch 364b is formed at the edge of the transfer plate 364. The notch 364b may have a shape corresponding to the protrusion 352b formed on the hand 352 of the transfer robot 351 described above. In addition, the notch 364b is provided to correspond in number to the protrusion 352b formed on the hand 352 and is formed at a position corresponding to the protrusion 352b. When the upper and lower portions of the hand 352 and the transfer plate 364 are changed from a position where the hand 352 and the transfer plate 364 are aligned in the vertical direction, the substrate W is transferred between the hand 352 and the transfer plate 364. The transfer plate 364 is mounted on a guide rail 364d and can be moved along the guide rail 364d by a driver 364c.

[0086] A plurality of slit-shaped guide grooves 364a are provided in the transfer plate 364. The guide grooves 364a extend from the distal end of the transfer plate 364 to the inside of the transfer plate 364. The longitudinal directions of the guide grooves 364a are provided along the second direction 14, and the guide grooves 364a are spaced apart from each other along the first direction 12. When the substrate W is transferred between the transfer plate 364 and the heating unit 363, the guide grooves 364a prevent the transfer plate 364 and the lift pins 363e from interfering with each other.

[0087] The heat transfer plate 364 is provided with a heat conductive material. In one example, the heat transfer plate 364 can be made of a metal material.

[0088] A cooling flow path 364a is formed in the transfer plate 364. The cooling flow path 364a is supplied with cooling water. The substrate W that has been completely heated in the heating unit 363 can be cooled while being transferred by the transfer plate 364. In addition, when the transfer plate 364 stops so that the substrate W is taken over by the transfer robot 351, the substrate W can be cooled on the transfer plate 364.

[0089] Alternatively, a cooling unit may also be provided in the housing 361. In this case, the cooling unit may be arranged in parallel with the heating unit 363. The cooling unit may be provided as a cooling plate having a channel formed therein through which a coolant flows. The substrate that has been heated in the heating unit may be returned to the cooling unit for cooling.

[0090] Figure 8 It is schematically shown Figure 3 or Figure 4 Front view of the liquid handling chamber.

[0091] refer to Figure 8 The liquid processing chamber 380 includes a shell 382 , an outer cup 384 , a support unit 386 and a liquid supply unit 387 .

[0092] The housing 382 is provided in a rectangular column shape having an inner space. An opening 382a is formed in one side of the housing 382. The opening 382a functions as a passage through which the substrate W enters and exits. A door (not shown) is installed in the opening 382a, and the door opens and closes the opening.

[0093] The inner space of the housing 382 is provided with an outer cup 384. The outer cup 384 has a processing space with an open top.

[0094] The support unit 386 supports the substrate W in the processing space of the outer cup 384. The support unit 386 includes a support plate 386a, a rotation shaft 386b and a driver 386c. The support plate 386a is provided with a circular top surface. The support plate 386a has a smaller diameter than the substrate W. The support plate 386a is provided to support the substrate W by vacuum pressure. The rotation shaft 386b is coupled to the center of the lower surface of the support plate 386a, and the driver 386c is provided on the rotation shaft 386b to provide a rotational force to the rotation shaft 386b. The driver 386c may be a motor. In addition, a lifting driver (not shown) may be provided to adjust the relative height of the support plate 386a and the outer cup 384.

[0095] The liquid supply unit 387 supplies the treatment solution to the substrate W. When the liquid treatment chamber 380 is arranged in the coating block 300a, the treatment solution may be a liquid for forming a photoresist film, an anti-reflection film or a protective film. When the liquid treatment chamber 380 is arranged in the developing block 300b, the treatment solution may be a developer liquid. The liquid supply unit 387 has a nozzle 387a, a nozzle support 387b and a liquid supply source (not shown). The nozzle 387a discharges the treatment solution onto the substrate W. The nozzle 387a is supported on the nozzle support 387b. The nozzle support 387b moves the nozzle 387a between the processing position and the standby position. In the processing position, the nozzle 387a supplies the treatment solution to the substrate W placed on the support plate 386a, and after completing the supply of the treatment solution, the nozzle 387a waits in the standby position. In the standby position, the nozzle 387a waits at the slot port 388, and the slot port 388 is located on the outer side of the outer cup 384 in the housing 382.

[0096] A fan filter unit 383 is provided on the top wall of the housing 382 to supply downward airflow to the inner space. The fan filter unit 383 includes a fan that introduces air from the outside into the inner space and a filter that filters the air from the outside.

[0097] The outer cup 384 includes a bottom wall 384a, a side wall 384b, and a top wall 384c. The inner portion of the outer cup 384 is provided as the above-mentioned inner space. The inner space H includes a processing space at the top and an exhaust space at the bottom.

[0098] The bottom wall 384a is provided in a circular shape and has an opening in the center. The side wall 384b extends upward from the outer end of the bottom wall 384a. The side wall 384b is provided in an annular shape and is provided perpendicular to the bottom wall 384a. In one example, the side wall 384b extends to a height equal to the top surface of the support plate 386a, or extends to a height slightly lower than the top surface of the support plate 386a. The top wall 384c has an annular shape with an opening in the center. The top wall 384c is provided with an upward slope from the top end of the side wall 384b toward the central axis of the outer cup 384.

[0099] The guide cup 385 is positioned on the inner side of the outer cup 384. The guide cup 385 has an inner wall 385a, an outer wall 385b and a top wall 385c. The inner wall 385a has a through hole penetrating in the vertical direction. The inner wall 385a is arranged to surround the driver 386c. The inner wall 385a minimizes the exposure of the driver 386c to the airflow 84 in the processing space. The rotating shaft 386b and / or the driver 386c of the support unit 386 extend through the through hole in the vertical direction. The outer wall 385b is spaced apart from the inner wall 385a and is arranged to surround the inner wall 385a. The outer wall 385b is spaced apart from the side wall 384b of the outer cup 384. The inner wall 385a is spaced apart upward from the bottom wall 384a of the outer cup 384. The top wall 385c connects the upper end of the outer wall 385b with the upper end of the inner wall 385a. The top wall 385c has an annular shape and is disposed to surround the support plate 386a. In one example, the top wall 385c has an upwardly convex shape.

[0100] The space below the support plate 386a in the processing space can be set as an exhaust space. In one example, the exhaust space can be defined by the guide cup 385. The space surrounded by the outer wall 385b, the top wall 385c and the inner wall 385a of the guide cup 385 and / or the space below the space can be set as the exhaust space.

[0101] The outer cup 384 may be provided with a gas-liquid separation plate 389. The gas-liquid separation plate 389 may be provided to extend upward from the bottom wall 384a of the outer cup 384. The gas-liquid separation plate 1230 may be provided in an annular shape. When viewed from above, the gas-liquid separation plate 389 may be positioned between the side wall 384b of the outer cup 384 and the outer wall 385b of the guide cup 385. The top end of the gas-liquid separation plate 389 may be positioned lower than the bottom end of the outer wall 385b of the guide cup 385.

[0102] The bottom wall 384a of the outer cup 384 is connected to an outlet pipe 381a for discharging the treated liquid and an exhaust pipe 381b. The outlet pipe 381a can be connected to the outer cup 384 from the outside of the gas-liquid separation plate 389. The exhaust pipe 381b can be connected to the outer cup 384 from the inside of the gas-liquid separation plate 389.

[0103] The interface module 500 connects the process module 300 with the external exposure device 700. The interface module 500 includes an interface frame 501, a buffer unit 510, a cooling unit 520, a transfer mechanism 530, an interface unit 540, and an additional process chamber 560.

[0104] A fan filter unit may be disposed at the top of the interface frame 501 , and a downward airflow is formed in the fan filter unit. The buffer unit 510 , the cooling unit 520 , the conveying mechanism 530 , the interface unit 540 and the additional processing chamber 560 are disposed inside the interface frame 501 .

[0105] The structures and arrangements of the buffer unit 510 and the cooling unit 520 may be the same as or similar to those of the buffer unit 310 and the cooling unit 320 provided in the process module 300. The buffer unit 510 and the cooling unit 520 are provided adjacent to the end of the transfer chamber 350. The substrate W transferred between the process module 300, the cooling unit 520, the additional process chamber 560, and the exposure device 700 may temporarily stay in the buffer unit 510. The cooling unit 520 may be provided between the coating block 300a and the developing block 300b only at a height corresponding to the coating block 300a.

[0106] The transfer mechanism 530 may transfer the substrate W between the buffer units 510. The transfer mechanism 530 may also transfer the substrate W between the buffer unit 510 and the cooling unit 520. The transfer mechanism 530 may be provided with a structure that is the same as or similar to the transfer mechanism 330 of the process module 300. Another transfer mechanism 531 may also be provided in an area opposite to the area where the transfer mechanism 530 is provided with respect to the buffer unit 510.

[0107] The interface unit 540 is disposed between the buffer unit 510 and the exposure device 700. The interface unit 540 is configured to transfer the substrate W between the buffer unit 510, the cooling unit 520, the additional processing chamber 560, and the exposure device 700. The interface unit 540 has a hand 542 on which the substrate W is placed, and the hand 542 may be configured to be movable forward and backward, rotatable about an axis parallel to the third direction 16, and movable along the third direction 16.

[0108] Before loading the substrate W processed in the coating block 300a into the exposure device 700, the additional processing chamber 560 may perform a predetermined additional processing. Alternatively, before loading the substrate W processed in the exposure device 700 into the development block 300b, the additional processing chamber 560 may perform a predetermined additional processing. In one example, the additional processing may be an edge exposure processing for exposing an edge area of ​​the substrate W, or a top surface cleaning processing for cleaning the top surface of the substrate W, or a bottom surface cleaning processing for cleaning the bottom surface of the substrate W, or an inspection processing for performing a predetermined inspection on the substrate W. A plurality of additional processing chambers 560 may be provided, and they may be stacked on top of each other.

[0109] Fig. 9 yes Figure 7 A partial cross-sectional view of a heating plate through a longitudinal cut is shown.

[0110] like Fig. 9 As shown, the heating plate 363a includes a base layer 363a1, a heating wire layer 363a2 and a protective layer 363a3, and may further include an insulating layer 363a5.

[0111] The substrate W is disposed on the base layer 363a1. In this case, the base layer 363a1 may also be formed with a support pin (not shown), and the substrate W may be supported by the support pin (not shown). When the substrate W is supported on the support pin (not shown), the substrate W may be spaced apart from the top surface of the base layer 363a1. The base layer 363a1 is formed of a thermally conductive material to dissipate the heat conducted from the heating wire layer 363a2 described later to the substrate W side. The base layer 363a1 may be formed of a ceramic material or a non-conductive material. For example, the base layer 363a1 may be formed of any one of aluminum nitride, silicon dioxide, and silicon nitride. In addition, when viewed from top to bottom, the base layer 363a1 may be schematically formed into a disc shape. In this case, the thickness of the base layer 363a1 may be optionally formed in the range of 1.5 mm to 5 mm.

[0112] The heating wire layer 363a2 may be located on the lower portion of the base layer 363a1. The heating wire layer 363a2 may be formed in a ring pattern. Fig. 9 When viewed from top to bottom, the pattern has a regular path and forms a curved portion. In addition, the heating wire layer 363a2 formed in a ring pattern can be arranged in multiple, while being spaced apart from each other. In this case, multiple heating wire layers 363a2 can be arranged to be spaced apart from the center of the base layer 363a1 to cover the entire area of ​​the base layer 363a1 formed in a disc shape. In addition, in the case where an insulating layer 363a5 is formed therein, the heating wire layer 363a2 can be formed on the insulating layer 363a5, and in the case where the insulating layer 363a5 is not formed therein, the heating wire layer 363a2 can be formed on the base layer 363a1. The heating wire layer 363a2 is formed to include a metal material and can be heated when powered. The heated heating wire layer 363a2 conducts heat to the base layer 363a1 to heat the substrate W.

[0113] In one example, the heating wire layer 363a2 may include an upper layer 363a2_1 and a lower layer 363a2_2.

[0114] The upper layer 363a2_1 may be formed on the top of the lower layer 363a2_2. In this case, the upper layer 363a2_1 may be formed to include a transition metal material. For example, the upper layer 363a2_1 may include a noble metal and a platinum group metal or an alloy of a noble metal and a platinum group metal. In this case, as an example of a noble metal, the noble metal may be formed of copper (Cu), silver (Ag) or gold (Au). In addition, as an example of a platinum group metal, the platinum group metal may be formed of platinum (Pt) or palladium (Pd). In this way, when powered, the heating wire layer 363a2 including the transition metal material may be heated and conduct the heat to the base layer 363a1. In this case, the thickness of the heating wire layer 363a2 may optionally be formed in the range of 0.01 mm to 0.1 mm.

[0115] In addition, the upper layer 363a2_1 may also include a ceramic material. For example, the upper layer 363a2_1 may be formed of a silicon dioxide material. Therefore, while the transition metal material is heated, the upper layer 363a2_1 prevents carbonization of the transition metal material even at high temperatures through the ceramic material. In addition, the upper layer 363a2_1 can maintain high thermal conductivity through the ceramic material.

[0116] In addition, the upper layer 363a2_1 may further include a heat dissipation material. As an example of a heat dissipation material, the heat dissipation material may be aluminum oxide. Therefore, the heating wire layer 363a2 may have an increased thermal conductivity, which may facilitate heat conduction to the base layer 363a1 when heated.

[0117] On the other hand, the lower layer 363a2_2 may include a metal bond. The metal bond is located between the top layer 363a2_1 and the protective layer 363a3, and is used to promote the increase of the resistance of the heating wire layer 363a2. As an example of forming the metal bond, the metal bond can be formed by combining the transition metal material of the upper layer 363a2_1 with the additive material of the protective layer 363a3 described later. In one example, when the upper layer 363a2_1 is composed of AgPd as a transition metal material and silicon dioxide (SiO2) as a ceramic material, the metal bond is formed. 2 ) is formed, and the protective layer 363a3 is made of silicon dioxide (SiO 2) and PbO as an additive material PbO are formed, the additive material PbO can be mixed near the bonding surface of the transition metal material AgPd to form a metal bond, the lower layer 363a2_2. Therefore, when the additive material contained in the protective layer is mixed with the transition metal material of the upper layer 363a2_1 to form the metal bond of the lower layer 363a2_2, the resistance of the heating wire layer 363a2 can be easily increased. Here, the thickness of the metal bond of the lower layer 363a2_2 can be optionally formed in the range of 0.001mm to 0.02mm. In addition, according to the heating method of the heating wire layer 363a2 described below, the thickness of the metal bond of the lower layer 363a2_2 can be formed unevenly.

[0118] The protective layer 363a3 is located on the lower portion of the heating wire layer 363a2 and may include a ceramic material and an additive material. For example, the protective layer 363a3 may include silicon dioxide (SiO 2 ) as a ceramic material, and may include PbO, V 2 O 2 and TeO 2 As an additive material. The protective layer 363a3 can protect the heating wire layer 363a2 by preventing the heating wire layer 363a2 from being exposed to the outside, thereby preventing the heating wire layer 363a2 from being oxidized and preventing the power from the heating wire layer 363a2 from leaking to the outside. The thickness of the protective layer 363a3 can be optionally formed in the range of 0.01mm to 0.2mm.

[0119] In addition, the protective layer 363a3 may further include a heat dissipation material. As an example of a heat dissipation material, the heat dissipation material may be aluminum oxide. Therefore, the protective layer 363a3 may have an increased thermal conductivity, which may increase the cooling rate of the heating wire layer 363a2 when cooling the heating wire layer 363a2, thereby shortening the cooling time.

[0120] The insulating layer 363a5 may be formed between the base layer 363a1 and the heating wire layer 363a2. When the base layer 363a1 is a non-conductor, the insulating layer 363a5 may be omitted, and when the base layer 363a1 is a conductor, the insulating layer 363a5 may be formed to insulate between the base layer 363a1 and the heating wire layer 363a2.

[0121] Hereinafter, a method of manufacturing a heating plate according to an exemplary embodiment of the present invention will be described.

[0122] Fig.10 is a flow chart of a method for manufacturing a heating plate according to an exemplary embodiment of the present invention. Figures 11 to 13 is based on Fig.10 A partial cross-sectional view of a heating plate showing the sequence of the heating plate manufacturing method. Figures 11 to 13Shown in an inverted state Fig. 9 Heating plate shown.

[0123] like Fig.10 As shown, the heating plate manufacturing method according to an exemplary embodiment of the present invention includes a substrate preparation operation S10, a heating wire layer formation operation S20, a protection layer formation operation S30 and a resistance adjustment operation S40, and may further include an insulation layer formation operation S50 and a component bonding operation S60.

[0124] First, the substrate preparation operation S10 is an operation of preparing the base layer 363a1, such as Fig.11 As described above, the base layer 363a1 may be schematically formed in a disk shape when viewed from top to bottom. In addition, as described above, the base layer 363a1 may be formed of a ceramic material or a metal material having high thermal conductivity.

[0125] In the heating wire layer forming operation S20, a heating wire layer 363a2 is formed on the basis of the base layer 363a1. Fig.11 The heating wire layer forming operation S20 may form the heating wire layer 363a2 on the insulating layer 363a5 in the presence of the insulating layer 363a5, as shown in FIG. Fig.13 As shown. In this case, as described above, when viewed from top to bottom, the heating wire layer 363a2 may be provided in the form of a ring pattern, and may be formed in plurality. In addition, the heating wire layer 363a2 formed by the heating wire layer forming operation S20 may be formed of the same material as that of the upper layer 363a2_1 described above. Therefore, the heating wire layer 363a2 formed by the heating wire layer forming operation S20 may include the transition metal material as exemplified above, and may also include a ceramic material and a heat dissipation material.

[0126] As an example of the heating wire layer forming operation S20 , the heating wire layer forming operation S20 may include a heating wire layer printing operation S21 and a heating wire layer heat treatment operation S22 .

[0127] In the heating wire layer printing operation S21 , the heating wire layer 363 a 2 is printed in a pattern based on the base layer 363 a 1 .

[0128] The heating wire layer heat treatment operation S22 may heat-treat the printed heating wire layer 363a2. In this case, the heating wire layer 363a2 may be sintered by heating the heating wire layer 363a2 printed in the heating wire layer printing operation S21 and then cooling the heating wire layer 363a2.

[0129] In this way, the heating wire layer 363a2 formed by the heating wire layer printing operation S21 and the heating wire layer heat treatment operation S22 can be manufactured in the form of a pattern having a very thin thickness as described above. For example, the heating wire layer 363a2 can be formed to have a thickness in the range of 0.01mm to 0.1mm.

[0130] In the protective layer forming operation S30, the protective layer 363a3 is formed based on the heating wire layer 363a2. Fig.11 As described above, the protective layer 363a3 may be located at the lower portion of the heating wire layer 363a2 and may be formed of a second material. In addition, as described above, the protective layer 363a3 may be formed to include a ceramic material and an additive material to protect the heating wire layer 363a2 by preventing the heating wire layer 363a2 from being exposed to the outside. As an example of the second material, the second material may include silicon dioxide as a ceramic material, and may include PbO, V 2 O 2 and TeO 2 In addition, as described above, the protective layer 363a3 may further include a heat dissipation material that increases thermal conductivity to increase the heat treatment efficiency of the substrate W. In this case, the protective layer forming operation S30 may be formed by printing the protective layer 363a3 on the heating wire layer 363a2.

[0131] The resistance adjustment operation S40 is an operation of adjusting the resistance of the heating wire layer 363a2. Specifically, in the resistance adjustment operation S40, the resistance of the heating wire layer 363a2 is adjusted by heating the heating wire layer 363a2 to a temperature or higher temperature at which the additive material of the protective layer 363a3 is melted, causing the heated heating wire layer 363a2 to melt the additive material, and causing the melted additive material to combine with the transition metal material of the heating wire layer 363a2 to form a metal bond. In this case, the metal bond corresponds to the lower layer 363a2_2 of the heating wire layer 363a2 as described above. Here, the method of melting the additive material in the resistance adjustment operation S40 may be to melt the additive material by irradiating the protective layer 363a3 and the heating wire layer 363a2 with the laser L1, such as Fig.12As shown. In this case, as the laser light L1, a UV laser or an IR laser may be used. In this case, the laser light may be irradiated at any one wavelength selected within a range of 300 nm to 500 nm. The laser light L1 may penetrate the protective layer 363a3 and be emitted to the heating wire layer 363a2. In this case, the laser light L1 may be emitted by traveling in a direction horizontal to one wide surface of the protective layer 363a3. In this case, since the protective layer 363a3 is formed of a ceramic material through which the laser light L1 may penetrate, the laser light L1 may be emitted to the heating wire layer 363a2 in a state of having penetrated the protective layer 363a3. Then, the laser light L1 emitted on the heating wire layer 363a2 heats the transition metal material of the protective layer 363a3 and the heating wire layer 363a2. At this time, since the melting point of the additive material is lower than the melting point of the transition metal material of the heating wire layer 363a2, the additive material is melted by the heated transition metal material of the heating wire layer 363a2. Then, between the upper layer 363a2_1 of the heating wire layer 363a2 and the protective layer 363a3, the transition metal material and the additive material are combined by melting to form a lower layer 363a2_2, i.e., a metal bond. In this case, the lower layer 363a2_2 as a metal bond interferes with the electrical path of the heating wire layer 363a2, thereby increasing the resistance of the heating wire layer 363a2. In addition, the lower layer 363a2_2 as a metal bond is oxidized by melting, thereby increasing the resistance of the heating wire layer 363a2. For example, the lower layer 363a2_2 as a metal bond can increase the resistance of the heating wire layer 363a2 because AgPd is oxidized to produce an oxide material, such as AgPd-O. In this way, the resistance of the heating wire layer 363a2 can be increased according to the yield and oxidation amount of the lower layer 363a2_2 as a metal bond.

[0132] Therefore, the method of manufacturing a heating plate according to an exemplary embodiment of the present invention can easily adjust the resistance value of the heating wire layer 363a2 to a desired value by generating the lower layer 363a2_2 as a metal bond.

[0133] At this time, in the resistance adjustment operation S40, the resistance of the heating wire layer 363a2 can be adjusted by increasing the amount of the additive material melted into the transition metal material contained in the upper layer 363a2_1. For example, by increasing the content of the additive material or increasing the irradiation intensity of the laser, a larger amount of the additive material is melted into the transition metal material than in the above example, so that the resistance of the heating wire layer 363a2 can be easily adjusted.

[0134] On the other hand, the insulating layer forming operation S50 may be performed between the substrate preparing operation S10 and the heating wire layer forming operation S20, and may be performed when the base layer 363a1 is a conductor including a conductive material. The insulating layer forming operation S50 forms an insulating layer 363a5 between the base layer 363a1 and the heating wire layer 363a2, such as Fig.13 The insulating layer 363a5 insulates between the base layer 363a1 and the heating wire layer 363a2 to prevent current from leaking from the heating wire layer 363a2 to the base layer 363a1. On the other hand, when the base layer 363a1 is formed of a non-conductor, the heating wire layer 363a2 can be formed on the base layer 363a1 as described above.

[0135] In the component bonding operation S60, a terminal (not shown) may be electrically connected to each of the opposite ends of the heating wire layer 363a2 whose resistance has been adjusted by the resistance adjustment operation S40, or a temperature sensor (not shown) for measuring the temperature of the heating wire layer 363a2 may be bonded to the protective layer 363a3.

[0136] It should be understood that exemplary embodiments are disclosed herein, and other variations are possible. Individual elements or features of a particular exemplary embodiment are generally not limited to the particular exemplary embodiment, but are interchangeable and may be used in a selected exemplary embodiment where applicable, even if not specifically shown or described. These modifications should not be considered as departing from the spirit and scope of the present invention, and all such modifications that would be apparent to a person of ordinary skill in the art are intended to be included within the scope of the appended claims.

Claims

1. A heating plate for supporting and heating a substrate, the heating plate comprising: a base layer, the substrate being disposed on the base layer; a heating filament layer disposed below the base layer and comprising a transition metal material and a metal bond; as well as a protective layer, which is located below the heating wire layer and includes a ceramic material and an additive material, wherein the additive material melts at a lower temperature than the ceramic material and the transition metal material, and The metal bond is a material produced by combining the transition metal material and components included in the additive material.

2. The heating plate according to claim 1, wherein the heating wire layer comprises: an upper layer comprising the transition metal material; as well as a lower layer comprising the transition metal material and the metal combination, and The upper layer is not provided with the metal binder.

3. The heating plate of claim 1, wherein the additive material has a melting point lower than a melting point of the transition metal material. 4 . The heating plate of claim 1 , wherein the heating wire layer comprises a noble metal, a platinum group metal, or an alloy of the noble metal and the platinum group metal. 5 . The heating plate according to claim 1 , wherein the heating wire layer further comprises a ceramic material and a heat dissipation material. The heating plate of claim 5 , wherein the heat dissipating material is alumina.

7. The heating plate according to claim 1, wherein the protective layer includes silicon dioxide as the ceramic material, and includes any one of PbO, V2O2, and TeO2 as the additive material.

8. The heating plate of claim 1, wherein the protective layer further comprises a heat dissipation material.

9. The heating plate of claim 8, wherein the heat dissipation material is alumina.

10. The heating plate of claim 1, wherein the heating wire layer is powered to be heated, and The heat generated in the heating wire layer is conducted to the substrate through the base layer.

11. A method for manufacturing a heating plate for heat treating a substrate, the method comprising: a substrate preparation operation, which prepares the base layer; a heating wire layer forming operation of forming a heating wire layer including a transition metal material on the base layer; a protective layer forming operation of forming a protective layer including a ceramic material and an additive material to cover the heating wire layer; and a resistance adjustment operation, which adjusts the resistance of the heating wire layer, In the resistance adjustment operation, the heating wire layer is heated to a temperature or above that causes the additive material to melt in the protective layer, and the melted additive material combines with the transition metal material in the heating wire layer to form a metal bond, thereby adjusting the resistance of the heating wire layer. 12 . The method according to claim 11 , wherein in the resistance adjustment operation, a laser is emitted to penetrate the ceramic material of the protective layer, thereby heating the heating wire layer. 13 . The method according to claim 11 , wherein the metal bond is formed at an interface where the heating wire layer and the protective layer are adjacent.

14. The method of claim 11, wherein the additive material has a melting point lower than the transition metal material. 15 . The method of claim 11 , wherein the heating filament layer comprises a noble metal, a platinum group metal, or an alloy of the noble metal and the platinum group metal.

16. The method of claim 11, wherein the heating wire layer further comprises a ceramic material and a heat dissipation material. 17 . The method according to claim 11 , wherein the protective layer comprises silicon dioxide as the ceramic material, and comprises any one of PbO, V 2 O 2 , and TeO 2 as the additive material.

18. The method according to claim 11, wherein the heating wire layer forming operation comprises: a heating wire layer printing operation, which prints the heating wire layer based on the base layer; as well as A heat treatment operation is performed to heat treat the printed heating wire layer.

19. The method according to claim 11, further comprising: An insulating layer forming operation is performed to form an insulating layer between the base layer and the heating wire layer, wherein the insulating layer forming operation is performed between the substrate preparing operation and the heating wire layer forming operation, and is performed when the base layer includes a conductive material.

20. A method for manufacturing a heating plate for heat treating a substrate, the method comprising: a substrate preparation operation, which prepares the base layer; an insulating layer forming operation of forming an insulating layer on the base layer; a heating wire layer forming operation, which forms a heating wire layer including a transition metal material, a ceramic material and a heat dissipation material on the insulating layer, wherein the heating wire layer is printed on the insulating layer, the printed heating wire layer is heat-treated, and the heating wire layer includes a noble metal, a platinum group metal or an alloy of the noble metal and the platinum group metal; a protective layer forming operation, which forms a protective layer including a ceramic material and an additive material to cover the heating wire layer, wherein the melting point of the additive material is lower than the melting point of the transition metal material, the protective layer uses silicon dioxide as the ceramic material, and uses any one of PbO, V2O2 and TeO2 as the additive material; as well as a resistance adjustment operation, which adjusts the resistance of the heating wire layer, In the resistance adjustment operation, the laser penetrates the ceramic material of the protective layer to heat the heating wire layer to a temperature or higher temperature at which the additive material melts in the protective layer, and the melted additive material combines with the transition metal material of the heating wire layer to form a metal bond at the interface adjacent to the heating wire layer and the protective layer, thereby adjusting the resistance of the heating wire layer.

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