Perovskite battery with reduced dead zone and preparation method thereof

Abstract

The present invention relates to the technical field of solar cells, and in particular, to a perovskite cell with reduced dead zone and a preparation method thereof, wherein the perovskite cell comprises a substrate, a conductive layer, a conductive part, a perovskite composite layer, a top electrode layer and a second conductive line, wherein the conductive layer is formed on the substrate and comprises a plurality of first conductive blocks, and a first groove is provided between two adjacent first conductive blocks; the first conductive line of the conductive part is formed on the first conductive block, and the insulating layer of the conductive part covers the first conductive line; the perovskite composite layer and the top electrode layer are sequentially formed on the conductive layer, and the top electrode layer comprises a plurality of second conductive blocks, and a second groove is provided between two adjacent second conductive blocks, and the second groove is distributed relative to the conductive part; the second conductive line is formed on the second conductive block and connected to the first conductive line. The perovskite cell can effectively reduce the dead zone, increase the effective power generation area, and thus improve the photoelectric conversion efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a perovskite cell with reduced dead zone and a preparation method thereof. Background Art

[0002] Perovskite cells are a type of solar cell that has excellent photoelectric conversion performance. When preparing perovskite cells, it is necessary to scribe different film layers of the perovskite cell to achieve a series structure, among which laser scribing is a commonly used method.

[0003] The perovskite cells provided by the related technology usually use P1, P2, and P3 laser engraving methods to realize the series and parallel connection of the cells; among them, the P1 laser engraving is used to isolate the connection between adjacent bottom TCO electrodes, the P2 laser engraving creates a series connection channel between the top TCO electrode and the bottom TCO electrode, and the P3 laser engraving is used to isolate the connection between the top TCO electrodes of adjacent sub-cells.

[0004] However, the perovskite cell provided by the related technology will produce a large dead area (ie, inactive area) after the laser scribing process, which will lead to a reduction in the effective power generation area of ​​the perovskite cell and a reduction in the photoelectric conversion efficiency. Summary of the invention

[0005] The purpose of the present invention is to provide a perovskite cell with reduced dead zone and a preparation method thereof, wherein the perovskite cell can effectively reduce the dead zone, increase the effective power generation area, and thus improve the photoelectric conversion efficiency; the preparation method can also improve the problem of discontinuous production process, and can reduce the problem of dust scattering on the surface of the effective area, block the ion migration between the perovskite composite layer and the top electrode layer, and improve the later stability and photoelectric conversion efficiency of the perovskite cell.

[0006] The present invention is achieved in that:

[0007] In a first aspect, the present invention provides a perovskite cell with reduced dead zone, comprising:

[0008] substrate;

[0009] A conductive layer is formed on the substrate, the conductive layer comprises a plurality of first conductive blocks which are spaced apart and a first groove is formed between two adjacent first conductive blocks;

[0010] A conductive portion disposed on a side of the first conductive block away from the substrate, the conductive portion comprising a first conductive line formed on the first conductive block and an insulating layer covering the first conductive line;

[0011] A perovskite composite layer formed on the conductive layer and the conductive portion and filling the first scribed groove;

[0012] A top electrode layer is formed on the perovskite composite layer, the top electrode layer includes a plurality of second conductive blocks that are spaced apart, and a second groove is provided between two adjacent second conductive blocks, and the second groove is distributed opposite to the conductive portion;

[0013] A second conductive line is formed on the second conductive line of the second conductive block and connected to the first conductive line.

[0014] In an optional embodiment, the conductive portion is distributed adjacent to the first scribed groove on one side of the corresponding first conductive block.

[0015] In an optional embodiment, the width of the second score groove is equal to, greater than, or less than the width of the conductive portion.

[0016] In an optional embodiment, a groove wall on one side of the second score groove is aligned with a groove wall on one side of the first score groove.

[0017] In an optional embodiment, the second conductive line is distributed in a second scribed groove adjacent to a side of the corresponding second conductive block.

[0018] In an optional embodiment, the second conductive line is arranged opposite to the first scored groove.

[0019] In an optional embodiment, the perovskite cell with reduced dead zone further includes a third conductive wire, the first conductive wire and the second conductive wire are connected by the third conductive wire, and the third conductive wire is distributed outside the perovskite composite layer.

[0020] In an optional embodiment, at least one second conductive line is connected to an adjacent first conductive line through a third conductive line; and / or,

[0021] At least one second conductive line is connected to a non-adjacent first conductive line through a third conductive line.

[0022] In a second aspect, the present invention provides a method for preparing a perovskite battery with reduced dead zone, which is used to prepare a perovskite battery with reduced dead zone as in any of the aforementioned embodiments, and the method for preparing a perovskite battery with reduced dead zone comprises:

[0023] forming a conductive layer on a substrate;

[0024] Performing laser P1 scribing on the conductive layer to form a first scribing groove, and separating and forming a plurality of first conductive blocks distributed at intervals;

[0025] Forming a conductive portion of the first conductive line wrapped by an insulating layer on a side of the first conductive block facing away from the substrate;

[0026] Forming a perovskite composite layer on the conductive layer and the conductive portion, and the perovskite composite layer is filled in the first scribed groove;

[0027] forming a top electrode layer on the perovskite composite layer;

[0028] Performing laser P3 scribing on the top electrode layer to form a second scribing groove distributed opposite to the conductive portion, and separating to form a plurality of second conductive blocks distributed at intervals;

[0029] forming a second conductive line on a side of the second conductive block facing away from the perovskite composite layer;

[0030] The first conductive line and the second conductive line are connected.

[0031] In an optional embodiment, the method of forming the first conductive line, the method of forming the second conductive line, and the method of connecting the second conductive line and the first conductive line include: printing, embossing, and screen printing.

[0032] The perovskite cell with reduced dead zone according to the embodiment of the present invention includes the following beneficial effects: the second score groove of the perovskite cell according to the embodiment of the present invention is relatively distributed with the conductive part, which can reduce the distance between the first score groove and the second score groove compared to the interval distribution between the second score groove and the conductive part, that is, reduce the dead zone, increase the effective power generation area, and thus improve the photoelectric conversion efficiency.

[0033] The method for preparing a perovskite cell with reduced dead zone according to an embodiment of the present invention includes the following beneficial effects: the method for preparing a perovskite cell with reduced dead zone provided by an embodiment of the present invention can be used to prepare the aforementioned perovskite cell with reduced dead zone, and the second score groove and the conductive part of the prepared perovskite cell are relatively distributed, and compared with the second score groove and the conductive part being spaced apart, the distance between the first score groove and the second score groove can be shortened, that is, the dead zone is shortened, the effective power generation area is increased, and the photoelectric conversion efficiency is thereby improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0035] Figure 1 A schematic diagram of the structure of a perovskite battery provided in the related art;

[0036] Figure 2 A schematic diagram of the structure of a perovskite battery with reduced dead zone in the present disclosure;

[0037] Figure 3 It is a schematic diagram of the structure of the substrate and the conductive layer in the present disclosure;

[0038] Figure 4 is a schematic structural diagram of a substrate and a first conductive block in the present disclosure;

[0039] Figure 5 It is a schematic structural diagram of a substrate, a first conductive block and a conductive part in the present disclosure;

[0040] Figure 6 It is a schematic structural diagram of a substrate, a first conductive block, a conductive portion, a perovskite composite layer and a top electrode layer in the present disclosure;

[0041] Figure 7 It is a schematic structural diagram of a substrate, a first conductive block, a conductive portion, a perovskite composite layer, and a second conductive block in the present disclosure;

[0042] Figure 8 It is a schematic structural diagram of a substrate, a first conductive block, a conductive portion, a perovskite composite layer, a second conductive block, and a second conductive line in the present disclosure;

[0043] Fig. 9 Schematic diagram of the structure of a perovskite cell with reduced dead zone according to other embodiments of the present disclosure.

[0044] Icon: 010-perovskite battery with reduced dead zone; 100-substrate; 110-conductive layer; 111-first conductive block; 112-first groove; 113-conductive part; 114-first conductive wire; 115-insulating layer; 120-perovskite composite layer; 121-hole layer; 122-perovskite layer; 123-charge transport layer; 124-electron transport layer; 130-top electrode layer; 131-second conductive block; 132-second groove; 133-second conductive wire; 140-third conductive wire. DETAILED DESCRIPTION

[0045] In order to make the purpose, technical scheme and advantages of the embodiments of the present invention clearer, the technical scheme in the embodiments of the present invention will be described clearly and completely below. If the specific conditions are not specified in the embodiments, they are carried out according to conventional conditions or conditions recommended by the manufacturer. If the manufacturer of the reagents or instruments used is not specified, they are all conventional products that can be purchased commercially.

[0046] Please refer to Figure 1The perovskite cells provided by the related technology usually use P1, P2, and P3 laser scribing methods to realize the series and parallel connection of the cells; wherein the P1 laser scribing process is to perform P1 laser scribing after the conductive layer 110 (transparent conductive electrode TCO, also known as the bottom electrode) is deposited and before the perovskite composite layer 120 (the perovskite composite layer 120 includes a hole layer 121, a perovskite layer 122, a charge transport layer 123, and an electron transport layer 124) to expose the substrate 100 and form the transparent conductive electrode TCO into independent strip-shaped conductive electrodes; the P2 laser scribing process is to perform laser scribing after the electron transport layer 124 is deposited and before the top electrode layer 130 is deposited to remove the hole layer 121 (i.e., HTL) / perovskite layer 122 / charge transport layer 123 / electron transport layer 124 (i.e., ETL), leaving the conductive layer 110 (i.e., transparent conductive electrode TCO) at the corresponding position and forming a gap, which will be filled when the top electrode layer 130 is deposited later to connect the bottom electrode of one battery with the transparent top electrode of the next battery; the P3 laser scribing process is to remove the top electrode layer 130 / hole layer 121 (i.e., HTL) / perovskite layer 122 / charge transport layer 123 / electron transport layer 124 (i.e., ETL) of adjacent batteries, leaving the conductive layer 110 (i.e., transparent conductive electrode TCO) to achieve a separation effect.

[0047] In the above process, the grooves formed by the P3 laser scribing process and the grooves formed by the P2 laser scribing process are spaced apart, so a large dead zone will be formed between the P1 process and the P3 process (that is, the distance between the grooves formed by the P1 laser scribing and the grooves formed by the P3 laser scribing is called the dead zone, that is, the inactive area). This area cannot perform photoelectric conversion, that is, the existence of the dead zone will reduce the power output of the perovskite cell. The geometric fill factor (i.e., GFF) is a quality factor used to reflect the above power loss mechanism. GFF is equivalent to the ratio of the effective area to the total area; the GFF range of the perovskite cell provided by the relevant technology is 90% to 95%, which means that the perovskite cell loses 5% to 10% of its power output. The inventors have found that by changing the structural design of the series connection between adjacent sub-cells, the dead zone area can be reduced to increase the effective power generation area, thereby improving the photoelectric conversion efficiency.

[0048] Moreover, the inventors have found that the above process flow is to perform P2 laser scribing after forming the ETL layer before forming the top electrode by evaporation or sputtering. The P2 laser scribing process not only leads to discontinuous production processes and increases the risk of components being exposed to the atmospheric environment during production, but also the dust generated by the P2 laser scribing process will be scattered on the surface of the effective area. Moreover, the P2 laser scribing will destroy the integrity of the functional film layer with ion barrier properties, and increase the ion migration at the edge position between the perovskite layer 122 and the TCO top electrode layer 130, which will have an adverse effect on the later stability and photoelectric conversion efficiency of the perovskite battery.

[0049] To improve the above problems, please refer to Figure 2-Figure 8 The present disclosure provides a perovskite cell 010 with reduced dead zone, comprising:

[0050] substrate 100;

[0051] A conductive layer 110 is formed on the substrate 100, wherein the conductive layer 110 includes a plurality of first conductive blocks 111 that are spaced apart from each other, and a first groove 112 is formed between two adjacent first conductive blocks 111;

[0052] A conductive portion 113 is disposed on a side of the first conductive block 111 away from the substrate 100 , and the conductive portion 113 includes a first conductive line 114 formed on the first conductive block 111 and an insulating layer 115 covering the first conductive line 114 ;

[0053] A perovskite composite layer 120 formed on the conductive layer 110 and the conductive portion 113 and filling the first scribed groove 112;

[0054] A top electrode layer 130 is formed on the perovskite composite layer 120, the top electrode layer 130 includes a plurality of second conductive blocks 131 that are spaced apart, and a second groove 132 is provided between two adjacent second conductive blocks 131, and the second groove 132 is distributed opposite to the conductive portion 113;

[0055] The second conductive line 133 is formed on the second conductive block 131 , and the second conductive line 133 is connected to the first conductive line 114 .

[0056] The second groove 132 is distributed relative to the conductive portion 113. Compared with the second groove 132 and the conductive portion 113 being distributed at intervals, the distance between the first groove 112 and the second groove 132 can be reduced, that is, the dead zone is reduced, the effective power generation area is increased, and the photoelectric conversion efficiency is improved.

[0057] Optionally, the conductive part 113 is distributed adjacent to the first scribed groove 112 on one side of the corresponding first conductive block 111, that is, the insulating layer 115 of the conductive part 113 is distributed adjacent to one side of the first conductive block 111, that is, the conductive part 113 is located at the edge of one side of the first conductive block 111 adjacent to the first scribed groove 112, and the width of the conductive part 113 is smaller than the width of the first conductive block 111. Such a configuration can further ensure that the distance between the second scribed groove 132 distributed opposite to the conductive part 113 and the first scribed groove 112 is shortened, that is, further ensure that the dead zone is reduced, so as to improve the photoelectric conversion efficiency.

[0058] Optionally, the width of the second score groove 132 is equal to the width of the conductive portion 113. In this way, the distance between the second score groove 132 and the first score groove 112 can be shortened, the dead zone can be reduced, the effective power generation area can be increased, and the photoelectric conversion efficiency can be improved.

[0059] Geometric filling factor = 1-dead zone width / subcell width H. Optionally, one side wall of the second scored groove 132 is aligned with one side wall of the first scored groove 112. This arrangement enables the width of the dead zone to be the sum of the width of the second scored groove 132 and the width of the first scored groove 112, which is beneficial for improving the geometric filling factor by adjusting the widths of the second scored groove 132 and the first scored groove 112.

[0060] Of course, in other embodiments, the width of the second score groove 132 may be greater than or less than the width of the conductive portion 113 .

[0061] For example, in an embodiment where the width of the second scored groove 132 is greater than the width of the conductive portion 113, a portion of the second scored groove 132 may be distributed relative to a portion of the first scored groove 112, that is, a groove wall on one side of the second scored groove 132 is not aligned with a groove wall on one side of the first scored groove 112, but corresponds to the groove distribution inside the first scored groove 112. In this way, the dead zone can be further reduced, the effective power generation area can be increased, and the photoelectric conversion efficiency can be improved.

[0062] Optionally, the second conductive line 133 is distributed adjacent to the second scribed groove 132 on one side of the corresponding second conductive block 131, that is, the second conductive line 133 is distributed adjacent to one side edge of the second conductive block 131, that is, the second conductive line 133 is located at the edge of one side of the second conductive block 131 adjacent to the second scribed groove 132, and the width of the second conductive line 133 is smaller than the width of the second conductive block 131. In this way, it can be ensured that two adjacent second conductive blocks 131 are effectively isolated.

[0063] Furthermore, the second conductive line 133 is opposite to the first scribed groove 112; since the second conductive line 133 is distributed adjacent to the second scribed groove 132 on one side of the corresponding second conductive block 131, the second conductive line 133 is arranged opposite to the first scribed groove 112, which can further ensure that the distance between the first scribed groove 112 and the second scribed groove 132 is reduced, so as to reliably reduce the dead zone and improve the photoelectric conversion efficiency.

[0064] Optionally, the conductivity of the first conductive line 114 is greater than that of the first conductive block 111 and the substrate 100. In this way, the performance requirements and power output requirements of the perovskite cell can be met, that is, the low resistance of the first conductive line 114 is ensured so that electrons can be reliably transmitted through the first conductive line 114.

[0065] In the present disclosure, the perovskite cell 010 with reduced dead zone further includes a third conductive line 140, the first conductive line 114 and the second conductive line 133 are connected by the third conductive line 140, and the third conductive line 140 is distributed outside the perovskite composite layer 120. In this way, it is not necessary to remove the perovskite composite layer 120 by laser scribing, that is, when preparing the perovskite cell 010 with reduced dead zone of the present disclosure, only P1 laser scribing and P3 laser scribing are required, and P2 laser scribing is not required. Alternatively, the process of making the conductive part 113 can be regarded as the P2 laser scribing process in the related art, that is, it is equivalent to adjusting the P2 laser scribing step after the step of preparing the perovskite composite layer 120 and before the step of preparing the top electrode layer 130 to be performed after the step of forming the first scribing groove 112 by the P1 laser scribing and before the step of making the perovskite composite layer 120, so as to improve the problem of discontinuity in the production process of making the electron transport layer 124 and the top electrode layer 130 caused by the P2 laser scribing process, and can reduce the problem of dust scattering on the surface of the effective area, block the ion migration between the perovskite composite layer 120 and the top electrode layer 130, and improve the later stability and photoelectric conversion efficiency of the perovskite battery 010 with reduced dead zone.

[0066] Further, at least one second conductive line 133 is connected to an adjacent first conductive line 114 through a third conductive line 140, that is, at least one second conductive line 133 is connected to a first conductive line 114 of a corresponding conductive portion 113 below a second scored groove 132 adjacent to the second conductive line 133 through a third conductive line 140. In this way, adjacent sub-cells can be connected in series.

[0067] Of course, please refer to Fig. 9In other embodiments, at least one second conductive line 133 is connected to a non-adjacent first conductive line 114 through a third conductive line 140, that is, at least one second conductive line 133 is connected to a first conductive line 114 of a conductive portion 113 corresponding to a second scribed groove 132 not adjacent to the second conductive line 133 through a third conductive line 140. In this way, non-adjacent sub-cells can be connected in series. In this way, when some sub-cells are damaged or defective, which may reduce the photoelectric conversion efficiency, the faulty sub-cell can be skipped and connected in series with the next sub-cell, thereby reducing the probability of failure and scrapping of the entire perovskite cell 010 with a reduced dead zone.

[0068] It should be noted that both the first conductive line 114 and the second conductive line 133 are in the shape of long strips, and both ends of the second conductive line 133 in the length extension direction are connected to both ends of the first conductive line 114 in the length extension direction through corresponding third conductive lines 140 .

[0069] Optionally, the perovskite composite layer 120 may be a regular perovskite composite layer structure or an inverse perovskite composite layer structure.

[0070] Furthermore, the inverse perovskite composite layer structure includes a hole layer 121, a perovskite layer 122, a charge transport layer 123 and an electron transport layer 124 having ion blocking properties, which are formed in sequence.

[0071] It should be noted that a sub-battery includes: a second conductive wire 133 and a first conductive wire 114 connected to each other, a hole layer 121, a perovskite layer 122, a charge transfer layer 123, an electron transfer layer 124 corresponding to the first conductive wire 114 and the second conductive wire 133, a second conductive block 131 connected to the second conductive wire 133, a first conductive block 111 connected to the first conductive wire 114, and a substrate 100 under the first conductive block 111.

[0072] Please refer to Figure 2-Figure 8 The present disclosure also provides a method for preparing a perovskite battery 010 with reduced dead zone, which comprises:

[0073] A conductive layer 110 is formed on a substrate 100, and the conductive layer 110 on the substrate 100 is scribed by laser P1 to cut the conductive layer 110 into a plurality of first conductive blocks 111 that are spaced apart, and a first scribed groove 112 formed by laser P1 scribe is provided between two adjacent first conductive blocks 111, and the substrate 100 is not etched and is exposed from the first scribed groove 112; a first conductive line 114 is formed on a side of the first conductive block 111 away from the substrate 100, and an insulating layer 115 is coated outside the first conductive line 114;

[0074] A perovskite composite layer 120 is formed on the conductive layer 110 , wherein the perovskite composite layer 120 covers the conductive layer 110 and the insulating layer 115 and fills the first scribed groove 112 ;

[0075] forming a top electrode layer 130 on the perovskite composite layer 120;

[0076] Laser P3 scribing is performed on the top electrode layer 130 to cut the top electrode layer 130 into a plurality of second conductive blocks 131 that are spaced apart, and a second scribing groove 132 is provided between two adjacent second conductive blocks 131, the perovskite composite layer 120 is not etched and is exposed from the second scribing groove 132, and the second scribing groove 132 is distributed opposite to the conductive portion 113;

[0077] A second conductive line 133 is formed on the second conductive block 131 , and the second conductive line 133 is connected to the first conductive line 114 .

[0078] Since the second groove 132 and the conductive part 113 are relatively distributed, compared with the second groove 132 and the conductive part 113 being spaced apart, the distance between the first groove 112 and the second groove 132 can be shortened, that is, the dead zone is shortened, the effective power generation area is increased, and the photoelectric conversion efficiency is improved.

[0079] Moreover, the preparation method only requires P1 laser scribing and P3 laser scribing, but not P2 laser scribing, so as to improve the problem of discontinuous production process caused by the P2 laser scribing process, and can reduce the problem of dust scattering on the surface of the effective area, block the ion migration between the perovskite composite layer 120 and the top electrode layer 130, and improve the later stability and photoelectric conversion efficiency of the perovskite cell 010 with reduced dead zone.

[0080] Optionally, the method for connecting the second conductive wire 133 to the first conductive wire 114 specifically includes: connecting the second conductive wire 133 and the first conductive wire 114 through a third conductive wire 140 distributed outside the perovskite composite layer 120. By connecting the second conductive wire 133 and the first conductive wire 114 through the third conductive wire 140 distributed outside the perovskite composite layer 120, the P2 laser scribing process is completely eliminated, the problem of dust scattering on the surface of the effective area is effectively reduced, the ion migration between the perovskite composite layer 120 and the top electrode layer 130 is blocked, and the later stability and photoelectric conversion efficiency of the perovskite battery 010 with reduced dead zone are improved.

[0081] Optionally, the method for forming the perovskite composite layer 120 includes: sequentially forming a hole layer 121, a perovskite layer 122, a charge transport layer 123, and an electron transport layer 124 having ion barrier properties on the conductive layer 110, wherein the hole layer 121 and the perovskite layer 122 are also formed in the first scribed groove 112. The formation process of the hole layer 121, the perovskite layer 122, the charge transport layer 123, and the electron transport layer 124 having ion barrier properties is similar to the related art, and will not be repeated here.

[0082] The preparation process of the perovskite cell 010 with reduced dead zone and the materials of each film layer and conductive wire disclosed in the present invention are similar to those in the related art. Only some examples are listed below, which does not mean that the present disclosure only includes the following schemes.

[0083] Optionally, the substrate 100 may be a glass substrate.

[0084] Optionally, the thickness of the substrate 100 may be 1-3 mm, for example, 1 mm, 2 mm, 3 mm, etc., which is not specifically limited herein.

[0085] Optionally, the conductive layer 110 may be ITO (indium tin oxide) or FTO (fluorine-doped SnO 2 ), etc., which is not specifically limited herein.

[0086] Optionally, the thickness of the conductive layer 110 may be 10-500 nm, for example, 10 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, etc., which is not specifically limited herein.

[0087] Optionally, the width of the first score groove 112 is 30-80 μm, for example, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, etc. Setting the width of the first score groove 112 to be narrower can more effectively reduce the dead zone area to improve the geometric fill factor.

[0088] In a preferred embodiment, the width of the first scribed groove 112 is 60 μm, which is convenient for the subsequent formation of the cavity layer 121 and the perovskite layer 122 .

[0089] Optionally, the width of the second score groove 132 is 20-80 μm, for example, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, etc., which is not specifically limited here.

[0090] Exemplarily, 1-dead zone width / sub-cell width H=geometric filling factor, one side wall of the first scribed groove 112 is aligned with one side wall of the second scribed groove 132, and the sum of the width of the first scribed groove 112 and the width of the second scribed groove 132 is equal to the dead zone width; the width H of the sub-cell of the perovskite cell 010 for reducing the dead zone is 5nm, the line width of the first scribed groove 112 is controlled to be 30-80μm, and the line width of the second scribed groove 132 is 20-80μm, which can control the geometric filling factor (GFF) to 96.8-99.0%, and the dead zone is reduced to 1.0-3.2%, which fully reduces the dead zone and improves the photoelectric conversion efficiency.

[0091] Optionally, the preparation method of the first conductive line 114 includes embossing, screen printing, printing, etc., which is not specifically limited here.

[0092] Optionally, the width of the first conductive line 114 is 10-40 μm, for example, 10 μm, 20 μm, 30 μm, 40 μm, etc., which is not specifically limited here.

[0093] Optionally, the thickness of the first conductive line 114 is 5-300 nm, for example, 5 nm, 10 nm, 100 nm, 200 nm, 300 nm, etc., which is not specifically limited here.

[0094] Optionally, the width of the second conductive line 133 is 10-40 μm, for example, 10 μm, 20 μm, 30 μm, 40 μm, etc., which is not specifically limited here.

[0095] Optionally, the thickness of the second conductive line 133 is 100-200 nm, for example, 100 nm, 120 nm, 150 nm, 170 nm, 200 nm, etc., which is not specifically limited here.

[0096] Optionally, both the second conductive wire 133 and the third conductive wire 140 can be prepared by printing; at least the second conductive wire 133 can also be prepared by embossing, screen printing, or the like.

[0097] Optionally, the material of the first conductive wire 114 , the second conductive wire 133 and the third conductive wire 140 may be at least one of graphite, carbon nanotubes, metal nanoparticles and metal nanowires.

[0098] Optionally, the insulating layer 115 may be prepared by screen printing, coating or printing.

[0099] Optionally, the width of the insulating layer 115 is 20-50 μm, for example, 20 μm, 30 μm, 40 μm, 50 μm, etc., which is not specifically limited here.

[0100] Optionally, the thickness of the insulating layer 115 is 60-100 nm, for example, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, etc., which is not specifically limited here.

[0101] Optionally, the insulating layer 115 may be made of at least one of photoresist, acrylic resin, silica gel, epoxy resin, aluminum oxide, silicon oxide, nickel oxide, silicon nitride, inorganic (perhydro) polysilazane and the like.

[0102] Optionally, the preparation method of the perovskite composite layer 120 includes but is not limited to coating, evaporation, ALD (atomic layer deposition) or sputtering.

[0103] Optionally, the cavity layer 121 may be a nickel oxide layer, etc., which is not specifically limited here.

[0104] Optionally, the thickness of the hole layer 121 may be 20-50 nm, for example, 20 nm, 30 nm, 40 nm, 50 nm, etc., which is not specifically limited here.

[0105] Optionally, the thickness of the perovskite layer 122 may be 400-700 nm, for example, 400 nm, 500 nm, 600 nm, 700 nm, etc., which is not specifically limited herein.

[0106] Optionally, the main component of the perovskite layer 122 is methylamine lead iodide (CH3NH3PbI3).

[0107] Optionally, the charge transport layer 123 may be fullerene C60 or the like, which is not specifically limited herein.

[0108] Optionally, the thickness of the charge transport layer 123 is 10-50 nm, for example, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, etc., which is not specifically limited here.

[0109] Optionally, the electron transport layer 124 having ion barrier properties may be SnO2 or BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), etc., which is not specifically limited here.

[0110] Optionally, the thickness of the electron transport layer 124 having ion barrier properties is 5-12 nm, for example, 5 nm, 7 nm, 10 nm, 12 nm, etc., which is not specifically limited here.

[0111] Optionally, the top electrode layer 130 includes at least one metal selected from the group consisting of gold, copper, molybdenum, nickel, silver and aluminum; it may also be at least one metal oxide selected from the group consisting of ITO (indium tin oxide), FTO (fluorine-doped SnO2), IWO (indium-doped tungsten oxide), AZO (aluminum-doped zinc oxide), IGO (indium-doped gallium oxide) and IZO (indium-doped zinc oxide); it may also be a bottom electrode of the above-mentioned metal oxides and a metal stack, such as IWO+Cu, ITO+Cu, etc., which is not specifically limited here.

[0112] Optionally, the thickness of the top electrode layer 130 is 80-120 nm, for example, 80 nm, 100 nm, 120 nm, etc., which is not specifically limited here.

[0113] The present invention is further described in detail below in conjunction with embodiments.

[0114] Example 1

[0115] Step 1) Laser P1 scribing is performed on the conductive layer 110 (thickness 400nm) of the FTO conductive glass until the glass substrate of the FTO conductive glass is exposed, so that the conductive layer 110 is divided into a plurality of independent first conductive blocks 111 of the same area. The width of the P1 scribing groove is 60μm. At the same time, a laser is used to scribe the alignment marks (mask positioning) for laser etching at the four corners of the glass to facilitate the positioning of the subsequent laser scribing.

[0116] Step 2) At the edge of the first conductive block 111 near the P1 groove, a carbon nanotube slurry is printed on the first conductive block 111 by screen printing to obtain a carbon nanotube slurry with a line width of 15 μm, a thickness of 100 nm, and a resistivity of 2×10 -7 The first conductive line 114 has a thickness of Ω / M.

[0117] Step 3) An insulating layer 115 covering the first conductive line 114 is prepared by screen printing on the periphery of the first conductive line 114 . The insulating layer 115 has a line width of 30 μm, a thickness of 80 nm, and a resistivity greater than 1 MΩ.

[0118] Step 4) Prepare a hole layer 121, and prepare a perovskite layer 122 with a thickness of 450nm by a slit coating process, then deposit a charge transport layer 123 with a thickness of 20nm and an electron transport layer 124 with a thickness of 8nm on the perovskite layer 122 by vacuum evaporation, and then perform coating deposition by vacuum evaporation to form a TCO top electrode layer 130 with a thickness of 100nm.

[0119] Step 5) Use a laser to position through a mask, and then perform laser P3 scribing on the surface of the TCO top electrode layer 130 to divide the TCO top electrode layer 130 into a plurality of second conductive blocks 131. The line width of the P3 scribing groove between adjacent second conductive blocks 131 is 40 μm, and the groove depth is 150 nm. One side wall of the P3 scribing groove is aligned with one side wall of the P1 scribing groove.

[0120] Step 6) At the edge of the second conductive block 131 near the P3 groove, a copper nanoparticle ink is printed using a printing device to form a second conductive line 133 with a line width of 30 μm and a thickness of 150 nm; a third conductive line 140 is then printed to connect the adjacent first conductive line 114 and the second conductive line 133, and annealed for 5 minutes at a temperature of 100° C. in an annealing furnace to complete sintering; the resistivity of the TCO top electrode layer 130, the second conductive line 133 and the third conductive line 140 is 2.6×10 -8 Ω / M.

[0121] The geometric fill factor (GFF) reaches 98.0% and the dead zone is reduced to 2.0%.

[0122] Example 2

[0123] Except for the following contents, the rest are the same as Example 1.

[0124] The insulating layer 115 covering the first conductive line 114 is prepared by inkjet printing with inorganic polysilazane ink and dual-band UV curing at 185nm and 254nm. The insulating layer 115 has a line width of 30μm, a thickness of 80nm, and a resistivity greater than 1MΩ.

[0125] The geometric fill factor (GFF) reaches 98.0% and the dead zone is reduced to 2.0%.

[0126] Example 3

[0127] Except for the following contents, the rest are the same as Example 1.

[0128] The silver nanowire paste is printed on the first conductive block 111 by screen printing, and annealed at 200°C for 15 minutes to form the first conductive wire 114. The first conductive wire 114 has a line width of 15 μm, a thickness of 300 nm, and a resistivity of 1×10 -6 Ω / m.

[0129] The geometric fill factor (GFF) reaches 98.0% and the dead zone is reduced to 2.0%.

[0130] Example 4

[0131] Except for the following contents, the rest are the same as Example 1.

[0132] An insulating layer 115 capable of covering the first conductive line 114 is prepared in the P1 groove by magnetron sputtering and matching a MASK mask. The insulating layer 115 has a line width of 30 μm, a thickness of 100 nm, and a resistivity greater than 1 MΩ.

[0133] The geometric fill factor (GFF) reaches 98.0% and the dead zone is reduced to 2.0%.

[0134] Example 5

[0135] Except for the following contents, the rest are the same as Example 1.

[0136] When printing the third conductive line 140 to connect the first conductive line 114 and the second conductive line 133, the defective sub-cell is detected by using the perovskite photovoltaic device defect (EL) detection equipment, and the third conductive line 140 connected to the sub-cell is interrupted by a laser device. Then, avoiding the defective sub-cell, a new third conductive line 140 is printed by a printing device to connect the first conductive line 114 and the second conductive line 133 of non-adjacent sub-cells.

[0137] It should be noted that the detection principle of the EL detection equipment is: using the electroluminescence principle of perovskite, using a high-resolution camera to capture near-infrared images of the components, and obtaining and determining the defects of the components.

[0138] The geometric fill factor (GFF) reaches 98.0% and the dead zone is reduced to 2.0%.

[0139] Example 6

[0140] Except for the following contents, the rest are the same as Example 1.

[0141] The silver nanoparticle ink is printed on the first conductive block 111 by screen printing, and the solvent in the silver nanoparticle ink is removed by a vacuum oven, and sintered by a laser device to obtain a conductive sheet with a line width of 10 μm, a thickness of 80 nm, and a resistivity of 1×10 -8 The first conductive line 114 has a thickness of Ω / m.

[0142] The geometric fill factor (GFF) reaches 98.0% and the dead zone is reduced to 2.0%.

[0143] Example 7

[0144] Except for the following contents, the rest are the same as Example 1.

[0145] Silver paste is prepared by doping silver nanoparticles in the photoresist, and a conductive film layer with a thickness of 100 nm is prepared by slit coating at the edge of the first conductive block 111 near the P1 line groove, and photolithography is performed after the conductive film layer is shielded by a mask to obtain a conductive film with a line width of 10 μm, a thickness of 100 nm, and a resistivity of 1×10 -8 The first conductive line 114 has a thickness of Ω / m.

[0146] The geometric fill factor (GFF) reaches 98.0% and the dead zone is reduced to 2.0%.

[0147] In summary, the perovskite cell 010 with reduced dead zone of the present invention can effectively reduce the dead zone, increase the effective power generation area, and thus improve the photoelectric conversion efficiency; the preparation method can also improve the problem of discontinuous production process, and can reduce the problem of dust scattering on the surface of the effective area, block the ion migration between the perovskite composite layer 120 and the top electrode layer 130, and improve the later stability and photoelectric conversion efficiency of the perovskite cell 010 with reduced dead zone.

[0148] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A perovskite battery with reduced dead zone, characterized in that: include: substrate(100); A conductive layer (110) formed on the substrate (100), the conductive layer (110) comprising a plurality of first conductive blocks (111) distributed at intervals, and a first groove (112) between two adjacent first conductive blocks (111); a conductive portion (113) disposed on a side of the first conductive block (111) facing away from the substrate (100), the conductive portion (113) comprising a first conductive line (114) formed on the first conductive block (111) and an insulating layer (115) covering the outside of the first conductive line (114); a perovskite composite layer (120) formed on the conductive layer (110) and the conductive portion (113) and filling the first scribed groove (112); A top electrode layer (130) formed on the perovskite composite layer (120), the top electrode layer (130) comprising a plurality of second conductive blocks (131) distributed at intervals, and a second scribed groove (132) between two adjacent second conductive blocks (131), the second scribed groove (132) being distributed relative to the conductive portion (113); A second conductive line (133) is formed on the second conductive block (131) and connected to the first conductive line (114).

2. The perovskite cell with reduced dead zone according to claim 1, characterized in that: The conductive portion (113) is distributed adjacent to the first scored groove (112) on one side of the corresponding first conductive block (111).

3. The perovskite cell with reduced dead zone according to claim 1, characterized in that: A groove wall on one side of the second scored groove (132) is aligned with a groove wall on one side of the first scored groove (112).

4. The perovskite cell with reduced dead zone according to claim 1, characterized in that: The second conductive line (133) is distributed adjacent to the second scored groove (132) on one side of the corresponding second conductive block (131).

5. The perovskite cell with reduced dead zone according to claim 4, characterized in that: The second conductive line (133) is arranged opposite to the first scored groove (112).

6. The perovskite cell with reduced dead zone according to claim 1, characterized in that: The dead zone reduced perovskite cell further comprises a third conductive line (140), the first conductive line (114) and the second conductive line (133) are connected via the third conductive line (140), and the third conductive line (140) is distributed outside the perovskite composite layer (120).

7. The perovskite cell with reduced dead zone according to claim 6, characterized in that: At least one of the second conductive lines (133) is connected to an adjacent first conductive line (114) via the third conductive line (140).

8. The perovskite cell with reduced dead zone according to claim 6, characterized in that: At least one of the second conductive lines (133) is connected to a non-adjacent first conductive line (114) via the third conductive line (140).

9. A method for preparing a perovskite battery with reduced dead zone, characterized in that: For preparing a perovskite cell with reduced dead zone as claimed in any one of claims 1 to 8, the method for preparing the perovskite cell with reduced dead zone comprises: forming a conductive layer (110) on a substrate (100); Performing laser P1 scribing on the conductive layer (110) to form a first scribing groove (112), and separating and forming a plurality of first conductive blocks (111) distributed at intervals; A conductive portion (113) in which a first conductive line (114) is wrapped by an insulating layer (115) is formed on a side of the first conductive block (111) facing away from the substrate (100); forming a perovskite composite layer (120) on the conductive layer (110) and the conductive portion (113), and the perovskite composite layer (120) is filled in the first scribed groove (112); forming a top electrode layer (130) on the perovskite composite layer (120); Performing laser P3 scribing on the top electrode layer (130) to form a second scribing groove (132) distributed opposite to the conductive portion (113), and separating to form a plurality of second conductive blocks (131) distributed at intervals; forming a second conductive line (133) on a side of the second conductive block (131) facing away from the perovskite composite layer (120); The first conductive line (114) and the second conductive line (133) are connected.

10. The method for preparing a perovskite cell with reduced dead zone according to claim 9, characterized in that: The method of forming the first conductive line (114), the method of forming the second conductive line (133), and the method of connecting the second conductive line (133) and the first conductive line (114) include: printing, embossing, and screen printing.

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