Perovskite battery and preparation method thereof

Abstract

The present invention relates to the technical field of solar cells, and in particular, to a perovskite cell and a preparation method thereof, wherein the perovskite cell comprises a substrate, a conductive layer, a first conductive wire, an insulating layer, a perovskite composite layer, a top electrode layer and a second conductive wire, wherein the conductive layer is formed on the substrate and comprises a plurality of first conductive blocks, and a first groove is provided between two adjacent first conductive blocks; the first conductive wire is formed in the first groove; the insulating layer covers the first conductive wire; the perovskite composite layer and the top electrode layer are sequentially formed on the conductive layer, the top electrode layer comprises a plurality of second conductive blocks, and a second groove is provided between two adjacent second conductive blocks, and the second groove is distributed relative to the first groove; the second conductive wire is formed in the second conductive block and connected to the first conductive wire. The perovskite cell can effectively reduce the dead zone, increase the effective power generation area, and thus improve the photoelectric conversion efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a perovskite cell and a preparation method thereof. Background Art

[0002] Perovskite cells are a type of solar cell that has excellent photoelectric conversion performance. When preparing perovskite cells, it is necessary to scribe different film layers of the perovskite cell to achieve a series structure, among which laser scribing is a commonly used method.

[0003] The perovskite cells provided by the related technology usually use P1, P2, and P3 laser engraving methods to realize the series and parallel connection of the cells; among them, the P1 laser engraving is used to isolate the connection between adjacent bottom TCO electrodes, the P2 laser engraving creates a series connection channel between the top TCO electrode and the bottom TCO electrode, and the P3 laser engraving is used to isolate the connection between the top TCO electrodes of adjacent sub-cells.

[0004] However, the perovskite cells provided by the related technology will produce a large dead area (i.e., inactive area) after the laser scribing process, which will lead to a reduction in the effective power generation area of ​​the perovskite cell and a decrease in the photoelectric conversion efficiency. Summary of the invention

[0005] The purpose of the present invention is to provide a perovskite cell and a preparation method thereof, wherein the perovskite cell can effectively reduce the dead zone, increase the effective power generation area, and thus improve the photoelectric conversion efficiency; the preparation method can also improve the problem of discontinuous production process, and can reduce the problem of dust scattering on the surface of the effective area, block the ion migration between the perovskite composite layer and the top electrode layer, and improve the later stability and photoelectric conversion efficiency of the perovskite cell.

[0006] The present invention is achieved in that:

[0007] In a first aspect, the present invention provides a perovskite battery, comprising:

[0008] substrate;

[0009] A conductive layer is formed on the substrate, the conductive layer comprising a plurality of first conductive blocks distributed at intervals, and a first groove is provided between two adjacent first conductive blocks;

[0010] The first conductive lines are formed in the first grooves, and any first conductive line contacts one of the adjacent first conductive blocks and is spaced apart from another adjacent first conductive block; any first conductive block contacts only one of the connected first conductive lines and is spaced apart from another adjacent first conductive line;

[0011] An insulating layer formed in the first groove, the insulating layer covering the first conductive line;

[0012] a perovskite composite layer formed on the conductive layer;

[0013] A top electrode layer is formed on the perovskite composite layer, the top electrode layer includes a plurality of second conductive blocks distributed at intervals, and a second groove is provided between two adjacent second conductive blocks, and the second groove is distributed opposite to the first groove; and,

[0014] A second conductive line is formed on the second conductive block, and the second conductive line is connected to the first conductive line, so that the first conductive block and the second conductive block are connected in series.

[0015] In an optional embodiment, the width of the second score groove is equal to, smaller than, or larger than the width of the first score groove.

[0016] In an optional embodiment, the perovskite cell further includes a third conductive wire, the second conductive wire and the first conductive wire are connected via the third conductive wire, and the third conductive wire is distributed outside the perovskite composite layer.

[0017] In an optional embodiment, a second conductive line formed on at least one second conductive block is connected to a first conductive line in a first groove opposite to an adjacent second groove through a third conductive line; and / or,

[0018] A second conductive line formed on at least one second conductive block is connected to a first conductive line in a first scribed line groove opposite to a non-adjacent second scribed line groove through a third conductive line.

[0019] In an optional embodiment, the width of the second conductive line is smaller than the width of the second conductive block, and the second conductive line is distributed adjacent to one side edge of the second conductive block.

[0020] In an optional embodiment, a side of the insulating layer facing away from the substrate is flush with a side of the first conductive block facing away from the substrate.

[0021] In an optional embodiment, the perovskite composite layer may be a formal perovskite composite layer structure or an inverted perovskite composite layer structure; or,

[0022] The perovskite composite layer includes a hole layer, a perovskite layer, a charge transport layer and an electron transport layer with ion blocking properties, which are formed in sequence.

[0023] In an optional embodiment, the conductivity of the first conductive line is greater than that of either the first conductive block or the substrate.

[0024] In a second aspect, the present invention provides a method for preparing a perovskite battery, which is used to prepare the perovskite battery of any one of the aforementioned embodiments, and the method for preparing the perovskite battery comprises:

[0025] Performing laser P1 etching on the conductive layer of the substrate to form a first scribed groove and separate the first conductive blocks into a plurality of mutually spaced first conductive blocks;

[0026] Conductive lines connected to the first conductive blocks on both sides of the first scribed groove are formed, and the portion of the conductive line connected to one of the first conductive blocks is etched away to form a first conductive line connected to the other first conductive block; or, a mask is provided in the first scribed groove to cover part of the first scribed groove, and then a first conductive line connected to one of the first conductive blocks is formed in the portion of the first scribed groove not covered;

[0027] Filling the first groove with an insulating layer that wraps the first conductive wire;

[0028] forming a perovskite composite layer and a top electrode layer in sequence;

[0029] Performing laser P3 scribing on the top electrode layer to form a second scribing groove that is distributed opposite to the first scribing groove and separates a plurality of second conductive blocks that are distributed at intervals;

[0030] forming a second conductive line on a side of the second conductive block facing away from the perovskite composite layer;

[0031] The first conductive line and the second conductive line are connected.

[0032] In an optional embodiment, the method of forming the conductive line, the method of forming the second conductive line, and the method of connecting the second conductive line and the first conductive line include: printing, embossing, and screen printing.

[0033] The perovskite cell of the embodiment of the present invention includes the following beneficial effects: the first score line groove and the second score line groove of the perovskite cell of the embodiment of the present invention are relatively distributed, that is, the first score line groove and the second score line groove can be at least partially overlapped, which effectively reduces the dead zone formed after scoring, increases the effective power generation area, and thus improves the photoelectric conversion efficiency.

[0034] The preparation method of the perovskite cell of the embodiment of the present invention includes the following beneficial effects: the preparation method of the perovskite cell provided by the embodiment of the present invention can be used to prepare the aforementioned perovskite cell, and the first score line groove and the second score line groove of the prepared perovskite cell are relatively distributed, that is, the first score line groove and the second score line groove can be at least partially overlapped, which effectively reduces the dead zone formed after scoring, increases the effective power generation area, and thus improves the photoelectric conversion efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0036] Figure 1 A schematic diagram of the structure of a perovskite cell provided for related technologies;

[0037] Figure 2 is a schematic diagram of the structure of the perovskite battery in the present disclosure;

[0038] Figure 3 It is a schematic diagram of the structure of the substrate and the conductive layer in the present disclosure;

[0039] Figure 4 It is a schematic diagram of the structure of the substrate and the conductive layer after laser P1 scribing in the present disclosure;

[0040] Figure 5 It is a schematic diagram of the structure of the substrate, the conductive layer and the conductive lines in the present disclosure;

[0041] Figure 6 is a schematic structural diagram of a substrate, a conductive layer and a first conductive line in the present disclosure;

[0042] Figure 7 It is a schematic structural diagram of a substrate, a conductive layer, a first conductive line and an insulating layer in the present disclosure;

[0043] Figure 8 It is a schematic structural diagram of a substrate, a conductive layer, a first conductive line, an insulating layer, a perovskite composite layer and a top electrode layer in the present disclosure;

[0044] Fig. 9 It is a schematic diagram of the structure of the substrate, the conductive layer, the first conductive line, the insulating layer, the perovskite composite layer and the top electrode layer after laser P3 scribing in the present disclosure;

[0045] Fig.10 It is a schematic structural diagram of a substrate, a conductive layer, a first conductive wire, an insulating layer, a perovskite composite layer, a top electrode layer, and a second conductive wire in the present disclosure;

[0046] Fig.11 Schematic diagram of the structure of a perovskite battery in other embodiments of the present disclosure.

[0047] Icon: 010-perovskite battery; 100-substrate; 110-conductive layer; 111-first conductive block; 112-first groove; 113-conductive line; 114-first conductive line; 115-insulating layer; 120-perovskite composite layer; 121-hole layer; 122-perovskite layer; 123-charge transport layer; 124-electron transport layer; 130-top electrode layer; 131-second conductive block; 132-second groove; 133-second conductive line; 140-third conductive line. DETAILED DESCRIPTION

[0048] In order to make the purpose, technical scheme and advantages of the embodiments of the present invention clearer, the technical scheme in the embodiments of the present invention will be described clearly and completely below. If the specific conditions are not specified in the embodiments, they are carried out according to conventional conditions or conditions recommended by the manufacturer. If the manufacturer of the reagents or instruments used is not specified, they are all conventional products that can be purchased commercially.

[0049] Please refer to Figure 1 The perovskite cells provided by the related technology usually use P1, P2, and P3 laser scribing methods to realize the series and parallel connection of the cells. Among them, the P1 laser scribing process is to perform P1 laser scribing after the conductive layer 110 (i.e., the transparent conductive electrode TCO, also known as the bottom electrode) is deposited and before the perovskite composite layer 120 (the perovskite composite layer 120 includes a hole layer 121, a perovskite layer 122, a charge transport layer 123, and an electron transport layer 124) to expose the substrate 100 and make the transparent conductive electrode TCO form independent strip-shaped conductive electrodes. The P2 laser scribing process is to perform laser scribing after the electron transport layer 124 is deposited and before the top electrode layer 130 is deposited, to remove the hole layer 121 (i.e., HTL), the perovskite layer 122, the charge transport layer 123, and the electron transport layer 124 (i.e., ETL), leaving the transparent conductive electrode TCO (conductive layer 110) at the corresponding position and forming a gap, which will be filled when the top electrode layer 130 is deposited later to connect the bottom electrode of one battery to the transparent top electrode of the next battery. The P3 laser scribing process is to remove the top electrode layer 130, the hole layer 121 (i.e., HTL), the perovskite layer 122, the charge transport layer 123, and the electron transport layer 124 (i.e., ETL) of the adjacent batteries, leaving the conductive layer 110 (i.e., the transparent conductive electrode TCO layer), thereby achieving a separation effect.

[0050] The above process will cause a large dead zone to form between the P1 process and the P3 process, that is, the distance between the line groove formed by the P1 laser engraving and the line groove formed by the P3 laser engraving is called the dead zone, that is, the inactive area. This area cannot perform photoelectric conversion, that is, the existence of the dead zone will reduce the power output of the perovskite cell. The geometric fill factor (i.e., GFF) is a quality factor used to reflect the above power loss mechanism. GFF is equivalent to the ratio of the effective area to the total area; the GFF range of the perovskite cell provided by the relevant technology is 90% to 95%, which means that the perovskite cell loses 5% to 10% of its power output. The inventors have found that by changing the structural design of the series connection between adjacent sub-cells, the dead zone area can be reduced to increase the effective power generation area, thereby improving the photoelectric conversion efficiency.

[0051] Moreover, the inventors have found that the above process flow is to perform P2 laser scribing after forming the ETL layer before forming the top electrode by evaporation or sputtering. The P2 laser scribing process not only leads to discontinuous production processes and increases the risk of components being exposed to the atmospheric environment during production, but also the dust generated by the P2 laser scribing process will be scattered on the surface of the effective area. Moreover, the P2 laser scribing will destroy the integrity of the functional film layer with ion barrier properties, and increase the ion migration at the edge position between the perovskite layer 122 and the TCO top electrode layer 130, which will have an adverse effect on the later stability and photoelectric conversion efficiency of the perovskite battery.

[0052] To improve the above problems, please refer to Figure 2-Figure 10 The present disclosure provides a perovskite battery 010, which includes:

[0053] substrate 100;

[0054] A conductive layer 110 is formed on the substrate 100, and the conductive layer 110 includes a plurality of first conductive blocks 111 that are spaced apart and formed by laser P1 scribing, and a first scribing groove 112 is formed between two adjacent first conductive blocks 111;

[0055] The first conductive lines 114 are formed in the first scored grooves 112, and any first conductive line 114 in the first scored grooves 112 is in contact with only one of the adjacent first conductive blocks 111, and is spaced apart from another adjacent first conductive block 111; any first conductive block 111 is in contact with only one of the connected first conductive lines 114, and is spaced apart from another adjacent first conductive line 114;

[0056] An insulating layer 115 is formed in the first scribed groove 112 , and the insulating layer 115 covers the first conductive line 114 ;

[0057] a perovskite composite layer 120 formed on the conductive layer 110;

[0058] A top electrode layer 130 is formed on the perovskite composite layer 120, the top electrode layer 130 includes a plurality of second conductive blocks 131 that are spaced apart, and a second scribed groove 132 is provided between two adjacent second conductive blocks 131, the perovskite composite layer 120 is not etched and is exposed from the second scribed groove 132, and the second scribed groove 132 is distributed relative to the first scribed groove 112; and,

[0059] The second conductive line 133 is formed on the second conductive block 131 , and the second conductive line 133 is connected to the first conductive line 114 .

[0060] Since the first groove 112 and the second groove 132 are arranged relatively to each other, the first groove 112 and the second groove 132 at least partially overlap, which effectively reduces the dead zone formed after the grooves are scribed, increases the effective power generation area, and thus improves the photoelectric conversion efficiency.

[0061] Furthermore, the width of the second groove 132 is equal to the width of the first groove 112. In this way, the first groove 112 and the second groove 132 completely overlap, which can fully reduce the dead zone and fully increase the effective power generation area, thereby improving the photoelectric conversion efficiency.

[0062] Of course, in other embodiments, the width of the second score groove 132 and the width of the first score groove 112 may also be different, that is, the width of the second score groove 132 may also be smaller than or larger than the width of the first score groove 112 .

[0063] It should be noted that, when the width of the second scored groove 132 is not equal to the width of the first scored groove 112, the symmetry axis of the second scored groove 132 coincides with or is parallel to the symmetry axis of the first scored groove 112, and the second scored groove 132 is at least partially opposite to the first scored groove 112. In this way, the dead zone can be reduced and the photoelectric conversion efficiency can be improved.

[0064] Optionally, the conductivity of the first conductive line 114 is greater than that of the first conductive block 111 and the substrate 100. In this way, the performance requirements and power output requirements of the perovskite cell 010 can be met, that is, the low resistance of the first conductive line 114 is ensured so that electrons can be reliably transmitted through the first conductive line 114.

[0065] The perovskite cell 010 of the present disclosure further includes a third conductive line 140, through which the second conductive line 133 and the first conductive line 114 are connected, and the third conductive line 140 is distributed outside the perovskite composite layer 120, so that the first conductive block 111 is connected in series with the second conductive block 131. With such a configuration, it is not necessary to remove the perovskite composite layer 120 by laser scribing, that is, when preparing the perovskite cell 010 of the present disclosure, only P1 laser scribing and P3 laser scribing are required, and P2 laser scribing is not required, so as to improve the problem of discontinuous production process caused by the P2 laser scribing process, and reduce the problem of dust scattering on the surface of the effective area, block the ion migration between the perovskite composite layer 120 and the top electrode layer 130, and improve the later stability and photoelectric conversion efficiency of the perovskite cell 010.

[0066] Furthermore, the second conductive line 133 formed on at least one second conductive block 131 is connected to the first conductive line 114 in the first scribed groove 112 opposite to the adjacent second scribed groove 132 through the third conductive line 140. In this way, adjacent sub-cells can be connected in series.

[0067] Of course, please refer to Fig.11 In other embodiments, the second conductive line 133 formed on at least one second conductive block 131 is connected to the first conductive line 114 in the first scribed groove 112 opposite to the non-adjacent second scribed groove 132 through the third conductive line 140. In this way, non-adjacent sub-cells can be connected in series; in this way, when some sub-cells are damaged or defective, which may reduce the photoelectric conversion efficiency, the faulty sub-cell is skipped and connected in series with the next sub-cell, thereby reducing the probability of failure and scrapping of the entire perovskite cell 010.

[0068] It should be noted that both the first conductive line 114 and the second conductive line 133 are in the shape of long strips, and both ends of the second conductive line 133 in the length extension direction are connected to both ends of the first conductive line 114 in the length extension direction through corresponding third conductive lines 140 .

[0069] Optionally, the width of the second conductive line 133 is smaller than the width of the second conductive block 131, and the second conductive line 133 is distributed adjacent to one side of the second conductive block 131. This arrangement can ensure that two adjacent second conductive blocks 131 are effectively isolated.

[0070] Optionally, the side of the insulating layer 115 facing away from the substrate 100 is flush with the side of the first conductive block 111 facing away from the substrate 100. This configuration can reliably wrap the first conductive line 114 in the first groove 112 on the one hand, and can ensure the reliability of the perovskite composite layer 120 subsequently formed on the conductive layer 110 on the other hand.

[0071] Optionally, the perovskite composite layer 120 may be a regular perovskite composite layer structure or an inverse perovskite composite layer structure.

[0072] Please refer to Figure 2 Furthermore, the inverse perovskite composite layer structure includes a hole layer 121, a perovskite layer 122, a charge transport layer 123 and an electron transport layer 124 having ion blocking properties, which are formed in sequence.

[0073] Please refer to Figure 2-Figure 10 The present disclosure also provides a method for preparing a perovskite battery 010, which comprises:

[0074] A perovskite base substrate 100 is provided, and a preparation method of the perovskite base substrate 100 includes: forming a conductive layer 110 on the substrate 100, performing laser P1 scribing on the conductive layer 110 on the substrate 100 to cut the conductive layer 110 into a plurality of first conductive blocks 111 distributed at intervals, and a first scribing groove 112 is provided between two adjacent first conductive blocks 111, and the substrate 100 is not etched and is exposed from the first scribing groove 112; forming first conductive lines 114 in the first scribing groove 112, and the first conductive lines 114 in any first scribing groove 112 are in contact with one of the adjacent first conductive blocks 111 and are spaced apart from another adjacent first conductive block 111; forming an insulating layer 115 in the first scribing groove 112, and the insulating layer 115 covers the first conductive lines 114;

[0075] forming a perovskite composite layer 120 on the conductive layer 110;

[0076] forming a top electrode layer 130 on the perovskite composite layer 120;

[0077] Laser P3 scribing is performed on the top electrode layer 130 to cut the top electrode layer 130 into a plurality of second conductive blocks 131 that are spaced apart, and a second scribing groove 132 is provided between two adjacent second conductive blocks 131, the perovskite composite layer 120 is not etched and is exposed from the second scribing groove 132, and the second scribing groove 132 is arranged opposite to the first scribing groove 112;

[0078] A second conductive line 133 is formed on the second conductive block 131 , and the second conductive line 133 is connected to the first conductive line 114 .

[0079] Since the first groove 112 and the second groove 132 are relatively distributed, the first groove 112 and the second groove 132 can at least partially overlap, effectively reducing the dead zone formed after the grooves are cut, increasing the effective power generation area, and thus improving the photoelectric conversion efficiency.

[0080] Moreover, the preparation method only requires P1 laser scribing and P3 laser scribing, but not P2 laser scribing, so as to improve the problem of discontinuous production process caused by the P2 laser scribing process, and can reduce the problem of dust scattering on the surface of the effective area, block the ion migration between the perovskite composite layer 120 and the top electrode layer 130, and improve the later stability and photoelectric conversion efficiency of the perovskite battery 010.

[0081] Optionally, the method for forming the first conductive line 114 in the first scribed groove 112 specifically includes: forming a conductive line 113 covering the bottom of the first scribed groove 112 in the first scribed groove 112, and then etching away a portion of the conductive line 113 to form the first conductive line 114. Forming the first conductive line 114 by etching away a portion of the conductive line 113 can effectively cut off the connection between two adjacent first conductive blocks 111, ensuring that the two adjacent first conductive blocks 111 are spaced apart.

[0082] The above etching can be performed by laser etching using a laser scribing device. The conductive lines 113 can be prepared by first spreading the conductive material on the bottom of the first scribing groove 112 by embossing, screen printing, printing, etc., and then curing the conductive material laid in the first scribing groove 112 by high temperature (e.g., annealing), light (e.g., light curing) or vacuum, so as to form the conductive lines 113 with high conductivity.

[0083] It should be understood that in other embodiments, the method of forming the first conductive line 114 in the first scribed groove 112 may also include: setting a mask in the first scribed groove 112 to cover part of the bottom of the first scribed groove 112, and then forming the first conductive line 114 in the uncovered part of the bottom of the first scribed groove 112, and then removing the mask.

[0084] Optionally, the method for connecting the second conductive wire 133 to the first conductive wire 114 specifically includes: connecting the second conductive wire 133 and the first conductive wire 114 through a third conductive wire 140 distributed outside the perovskite composite layer 120. By connecting the second conductive wire 133 and the first conductive wire 114 through the third conductive wire 140 distributed outside the perovskite composite layer 120, the P2 laser scribing process is completely eliminated, the problem of dust scattering on the surface of the effective area is effectively reduced, the ion migration between the perovskite composite layer 120 and the top electrode layer 130 is blocked, and the later stability and photoelectric conversion efficiency of the perovskite battery 010 are improved.

[0085] Optionally, the method for forming the perovskite composite layer 120 includes: sequentially forming a hole layer 121, a perovskite layer 122, a charge transport layer 123, and an electron transport layer 124 having ion barrier properties on the conductive layer 110. The formation processes of the hole layer 121, the perovskite layer 122, the charge transport layer 123, and the electron transport layer 124 having ion barrier properties are similar to those of the related art and will not be described in detail herein.

[0086] Please continue to refer to Figure 2-Figure 10 The preparation process of the perovskite battery 010 disclosed in the present invention and the materials of each film layer and conductive wire are similar to those of the related art. Only some examples are listed below, which does not mean that the present invention only includes the following schemes.

[0087] Optionally, the substrate 100 may be a glass substrate.

[0088] Optionally, the thickness of the substrate 100 may be 1-3 mm, for example, 1 mm, 2 mm, 3 mm, etc., which is not specifically limited herein.

[0089] Optionally, the conductive layer 110 may be ITO (indium tin oxide) or FTO (fluorine-doped SnO 2 ) etc., are not specifically limited here.

[0090] Optionally, the thickness of the conductive layer 110 may be 10-500 nm, for example, 10 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, etc., which is not specifically limited herein.

[0091] Optionally, the width of the first score groove 112 is 20-80 μm, for example, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, etc., which is not specifically limited here. Setting the width of the first score groove 112 to be narrower can more effectively reduce the dead zone area to improve the geometric fill factor.

[0092] In a preferred embodiment, the width of the first scribed groove 112 is 60 μm, so that the dead zone can be effectively reduced and the subsequent steps of filling and etching the conductive line 113 can be easily performed.

[0093] Exemplarily, 1-dead zone width / sub-cell width H=geometric filling factor, the width of the first scribed groove 112 is approximately equal to the dead zone width; the sub-cell width H of the perovskite cell 010 is 5nm, and the line width of the first scribed groove 112 is controlled at 20-80μm, which can control the geometric filling factor (GFF) at 98.4-99.6%, and the dead zone is reduced to 0.4-1.6%, which fully reduces the dead zone and improves the photoelectric conversion efficiency.

[0094] It should be noted that a sub-battery includes: a second conductive wire 133 and a first conductive wire 114 connected to each other, a hole layer 121, a perovskite layer 122, a charge transfer layer 123, and an electron transfer layer 124 corresponding to the second conductive wire 133 and the first conductive wire 114, and a second conductive block 131 connected to the second conductive wire 133, a first conductive block 111 connected to the first conductive wire 114, and a substrate 100 under the first conductive block 111.

[0095] Optionally, the width of the first conductive line 114 after etching is 10-40 μm, for example, 10 μm, 20 μm, 30 μm, 40 μm, etc., which is not specifically limited here.

[0096] Optionally, the thickness of the first conductive line 114 is 5-300 nm, for example, 5 nm, 10 nm, 100 nm, 200 nm, 300 nm, etc., which is not specifically limited here.

[0097] Optionally, the width of the second conductive line 133 is 10-40 μm, for example, 10 μm, 20 μm, 30 μm, 40 μm, etc., which is not specifically limited here.

[0098] Optionally, the thickness of the second conductive line 133 is 100-200 nm, for example, 100 nm, 120 nm, 150 nm, 170 nm, 200 nm, etc., which is not specifically limited here.

[0099] Optionally, the insulating layer 115 may be prepared by screen printing, coating or printing.

[0100] Optionally, both the second conductive wire 133 and the third conductive wire 140 can be prepared by printing; at least the second conductive wire 133 can also be prepared by embossing, screen printing, or the like.

[0101] Optionally, the material of the first conductive wire 114 , the second conductive wire 133 and the third conductive wire 140 may be at least one of graphite, carbon nanotubes, metal nanoparticles and metal nanowires.

[0102] Optionally, the insulating layer 115 may be made of at least one of photoresist, acrylic resin, silica gel, epoxy resin, aluminum oxide, silicon oxide, nickel oxide, silicon nitride, inorganic (perhydro) polysilazane and the like.

[0103] Optionally, the preparation method of the perovskite composite layer 120 includes but is not limited to coating, evaporation, ALD (atomic layer deposition) or sputtering.

[0104] Optionally, the cavity layer 121 may be a nickel oxide layer, etc., which is not specifically limited here.

[0105] Optionally, the thickness of the hole layer 121 may be 20-50 nm, for example, 20 nm, 30 nm, 40 nm, 50 nm, etc., which is not specifically limited here.

[0106] Optionally, the thickness of the perovskite layer 122 may be 400-700 nm, for example, 400 nm, 500 nm, 600 nm, 700 nm, etc., which is not specifically limited herein.

[0107] Optionally, the main component of the perovskite layer 122 is methylamine lead iodine (CH 3 NH 3 PbI 3 ).

[0108] Optionally, the charge transport layer 123 may be fullerene C60 or the like, which is not specifically limited herein.

[0109] Optionally, the thickness of the charge transport layer 123 is 10-50 nm, for example, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, etc., which is not specifically limited here.

[0110] Optionally, the electron transport layer 124 having ion barrier properties may be SnO 2 Or BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), etc., which are not specifically limited here.

[0111] Optionally, the thickness of the electron transport layer 124 having ion barrier properties is 5-12 nm, for example, 5 nm, 7 nm, 10 nm, 12 nm, etc., which is not specifically limited here.

[0112] Optionally, the top electrode layer 130 includes at least one metal selected from the group consisting of gold, copper, molybdenum, nickel, silver and aluminum; or may include ITO (indium tin oxide), FTO (fluorine-doped SnO 2 ), at least one metal oxide selected from IWO (indium-doped tungsten oxide), AZO (aluminum-doped zinc oxide), IGO (indium-doped gallium oxide) and IZO (indium-doped zinc oxide); it can also be the above-mentioned metal oxide and a metal stacked bottom electrode, such as IWO+Cu, ITO+Cu, etc., which are not specifically limited here.

[0113] Optionally, the thickness of the top electrode layer 130 is 80-120 nm, for example, 80 nm, 100 nm, 120 nm, etc., which is not specifically limited here.

[0114] Optionally, the width of the second score groove 132 is 20-80 μm, for example, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, etc., which is not specifically limited here.

[0115] The present invention is further described in detail below in conjunction with embodiments.

[0116] Example 1

[0117] Step 1) Laser P1 scribing is performed on the conductive layer 110 (the thickness of the conductive layer 110 is 400 nm) on the FTO conductive glass until the glass substrate 100 of the FTO conductive glass is exposed, so that the conductive layer 110 is separated into a plurality of mutually independent first conductive blocks 111 of the same area. The width of the groove formed by the laser P1 scribing is 60 μm; at the same time, the laser is used to etch the alignment marks (mask positioning) for laser etching at the four corners of the glass substrate 100 to facilitate the positioning of the subsequent laser scribing.

[0118] Step 2) The metal nanoparticle slurry is printed on the bottom of the line groove formed by the laser P1 line by inkjet printing, and annealed in an annealing furnace at a temperature of 150°C to form a line with a width of 60 μm, a thickness of 200 nm, and a resistivity of 2×10 -7 The conductive line 113 with a thickness of Ω / M reconnects two adjacent conductive blocks.

[0119] Step 3) A portion of the conductive line 113 close to one of the first conductive blocks 111 is etched away using a laser scribing process, so that the conductive line 113 forms a first conductive line 114 connected only to the other first conductive block 111, and the two first conductive blocks 111 connected by the conductive line 113 are separated again to form two independent first conductive blocks 111. The first conductive line 114 remaining after etching has a line width of 30 μm and a thickness of 200 nm.

[0120] Step 4) Print photoresist with a viscosity of 15 cps in the line groove formed by laser P1 line engraving by inkjet printing, and fill the line groove to obtain a photoresist insulating layer 115 with a line width of 60 μm and a resistivity greater than 1 MΩ.

[0121] Step 5) Prepare a hole layer 121, and prepare a perovskite layer 122 with a thickness of 450 nm by a slit coating process, and then deposit a charge transport layer 123 with a thickness of 20 nm and BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) with a thickness of 8 nm on the perovskite layer 122 by vacuum evaporation, and then form a TCO top electrode layer 130 with a thickness of 100 nm by vacuum evaporation.

[0122] Step 6) Use a laser to position through a mask and perform laser P3 scribing on the surface of the TCO top electrode layer 130 to form a linear groove with a line width of 40μm and a depth of 100nm, and form a plurality of second conductive blocks 131 distributed at intervals in the TCO top electrode layer 130; the linear grooves formed by the laser P3 scribing are distributed relative to the linear grooves formed by the laser P1 scribing.

[0123] Step 7) Print the copper nanoparticle ink on the second conductive block 131 using a printing device to form a second conductive line 133 with a line width of 30 μm and a thickness of 150 nm, and print the copper nanoparticle ink into a third conductive line 140 connecting the adjacent first conductive line 114 and the second conductive line 133 using a printing device, and finally anneal for 5 minutes at 100° C. in an annealing furnace to complete sintering; the resistivity of the TCO top electrode layer 130, the second conductive line 133 and the third conductive line 140 is 2.6×10 -8 Ω / M.

[0124] The geometric fill factor (GFF) reaches 98.8% and the dead zone is reduced to 1.2%.

[0125] Example 2

[0126] Except for the following contents, the rest are the same as Example 1.

[0127] The preparation method of the insulating layer 115 is as follows: fill the inorganic polysilazane ink into the line groove formed by the laser P1 line by inkjet printing, and then cure it by dual-band ultraviolet of 185nm and 254nm to obtain an insulating layer 115 with a line width of 60μm and a resistivity greater than 1MΩ.

[0128] The geometric fill factor (GFF) reaches 98.8% and the dead zone is reduced to 1.2%.

[0129] Example 3

[0130] Except for the following contents, the rest are the same as Example 1.

[0131] The preparation method of the conductive line 113 is as follows: a silver nanowire slurry is printed on the bottom of the line groove by screen printing in the line groove formed by the laser P1 engraving, and a high temperature annealing is performed at 200°C for 15 minutes to obtain a line with a width of 60 μm, a thickness of 300 nm, and a resistivity of 1×10 -6 Ω / m conductive line 113.

[0132] The geometric fill factor (GFF) reaches 98.8% and the dead zone is reduced to 1.2%.

[0133] Example 4

[0134] Except for the following contents, the rest are the same as Example 1.

[0135] The insulating layer 115 is prepared by magnetron sputtering and a MASK mask in the line groove formed by laser P1 to prepare a silicon nitride insulating layer 115 that can cover the first conductive line 114 and has a line width of 60 μm and a resistivity greater than 1 MΩ.

[0136] The geometric fill factor (GFF) reaches 98.8% and the dead zone is reduced to 1.2%.

[0137] Example 5

[0138] Except for the following contents, the rest are the same as Example 1.

[0139] When printing the third conductive line 140 to connect the first conductive line 114 and the second conductive line 133, the defective sub-cell is detected by using the perovskite photovoltaic device defect detection (EL) equipment, and the third conductive line 140 connected to the sub-cell is interrupted by using the laser equipment. Then, avoiding the defective sub-cell, a new third conductive line 140 is printed by using the printing equipment to connect the first conductive line 114 and the second conductive line 133 of the non-adjacent sub-cell.

[0140] It should be noted that the detection principle of the EL detection equipment is: using the electroluminescence principle of perovskite, using a high-resolution camera to capture near-infrared images of the components, and obtaining and determining the defects of the components.

[0141] The geometric fill factor (GFF) reaches 98.8% and the dead zone is reduced to 1.2%.

[0142] Example 6

[0143] Except for the following contents, the rest are the same as Example 1.

[0144] The width of the groove formed by laser P1 scribing using a laser device is 20 μm.

[0145] The graphite nanoparticle ink is printed on the bottom of the line groove formed by the laser P1 scribing method by screen printing, and the graphite nanomaterial in the line groove is sintered by laser equipment to form a conductive line 113. Then, a portion of the conductive line 113 close to one of the first conductive blocks 111 is etched away by a laser scribing process, so that the conductive line 113 forms a first conductive line 114 connected only to the other first conductive block 111, and the two first conductive blocks 111 connected by the conductive line 113 are separated again to form two independent first conductive blocks 111. The first conductive line 114 left after etching has a line width of 10 μm, a thickness of 200 nm, and a resistivity of 2×10 -7 The first conductive line 114 has a thickness of Ω / M.

[0146] The geometric fill factor (GFF) reaches 99.6% and the dead zone is reduced to <0.5%.

[0147] Example 7

[0148] Except for the following contents, the rest are the same as Example 1.

[0149] The method for preparing the first conductive line 114 is as follows: silver nanoparticles are doped into a photoresist to prepare a silver paste, a conductive line 113 with a thickness of 100 nm is prepared in the line groove formed after laser P1 line engraving by an inkjet printing method, a mask is used to cover the portion of the conductive line 113 close to one of the first conductive blocks 111, and then photolithography is performed, and then the portion of the conductive line 113 that is not covered is cleaned by a cleaning process to obtain a conductive line 113 with a line width of 10 μm, a thickness of 100 nm, and a resistivity of 1×10 -8 The first conductive line 114 has a thickness of Ω / m.

[0150] The geometric fill factor (GFF) reaches 98.8% and the dead zone is reduced to 1.2%.

[0151] In summary, the perovskite cell 010 of the present invention can effectively reduce the dead zone, increase the effective power generation area, and thus improve the photoelectric conversion efficiency; moreover, the preparation method of the present invention can also improve the problem of discontinuous production process caused by the P2 laser scribing process, and can reduce the problem of dust scattering on the surface of the effective area, block the ion migration between the perovskite composite layer 120 and the top electrode layer 130, and improve the later stability and photoelectric conversion efficiency of the perovskite cell 010.

[0152] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A perovskite battery, characterized in that: include: substrate(100); A conductive layer (110) formed on the substrate (100), the conductive layer (110) comprising a plurality of first conductive blocks (111) distributed at intervals, and a first groove (112) between two adjacent first conductive blocks (111); A first conductive line (114) is formed in the first scored groove (112); any first conductive line (114) is in contact with only one of the adjacent first conductive blocks (111) and is spaced apart from another adjacent first conductive block (111); any first conductive block (111) is in contact with only one of the connected first conductive lines (114) and is spaced apart from another adjacent first conductive line (114); an insulating layer (115) formed in the first scribed groove (112), wherein the insulating layer (115) covers the first conductive line (114); a perovskite composite layer (120) formed on the conductive layer (110); a top electrode layer (130) formed on the perovskite composite layer (120), the top electrode layer (130) comprising a plurality of second conductive blocks (131) distributed at intervals, and a second scribed groove (132) between two adjacent second conductive blocks (131), the second scribed groove (132) being distributed opposite to the first scribed groove (112); and, A second conductive line (133) is formed on the second conductive block (131), and the second conductive line (133) is connected to the first conductive line (114).

2. The perovskite battery according to claim 1, characterized in that: The perovskite cell further comprises a third conductive wire (140), the second conductive wire (133) and the first conductive wire (114) are connected via the third conductive wire (140), and the third conductive wire (140) is distributed outside the perovskite composite layer (120).

3. The perovskite battery according to claim 2, characterized in that: The second conductive line (133) formed on at least one of the second conductive blocks (131) is connected to the first conductive line (114) in the first scored groove (112) opposite to the adjacent second scored groove (132) through the third conductive line (140).

4. The perovskite battery according to claim 2, characterized in that: The second conductive line (133) formed on at least one of the second conductive blocks (131) is connected to the first conductive line (114) in the first scored groove (112) opposite to the non-adjacent second scored groove (132) through the third conductive line (140).

5. The perovskite battery according to claim 1, characterized in that: The width of the second conductive line (133) is smaller than the width of the second conductive block (131), and the second conductive line (133) is distributed adjacent to one side edge of the second conductive block (131).

6. The perovskite battery according to claim 1, characterized in that: A side of the insulating layer (115) facing away from the substrate (100) is flush with a side of the first conductive block (111) facing away from the substrate (100).

7. The perovskite battery according to claim 1, characterized in that: The perovskite composite layer (120) is a regular perovskite composite layer (120) structure or an inverted perovskite composite layer (120) structure.

8. The perovskite battery according to claim 1, characterized in that: The conductivity of the first conductive line (114) is greater than that of any one of the first conductive block (111) and the substrate (100).

9. A method for preparing a perovskite battery, characterized in that: Used to prepare the perovskite battery according to any one of claims 1 to 8, the preparation method of the perovskite battery comprising: Performing laser P1 etching on the conductive layer (110) of the substrate (100) to form a first scribed groove (112) and separate the first conductive blocks (111) into a plurality of mutually spaced first conductive blocks; Conductive lines (113) connected to the first conductive blocks (111) on both sides of the first scribed groove (112) are formed, and the portion of the conductive line (113) connected to one of the first conductive blocks (111) is etched away to form a first conductive line (114) connected to another first conductive block (111); or, a mask is provided in the first scribed groove (112) to cover part of the first scribed groove (112), and then a first conductive line (114) connected to one of the first conductive blocks (111) is formed in the portion of the first scribed groove (112) that is not covered; Filling the first scored groove (112) with an insulating layer (115) that wraps the first conductive wire (114); forming a perovskite composite layer (120) and a top electrode layer (130) in sequence; Performing laser P3 scribing on the top electrode layer (130) to form a second scribing groove (132) distributed opposite to the first scribing groove (112) and to separate a plurality of second conductive blocks (131) distributed at intervals; forming a second conductive line (133) on a side of the second conductive block (131) facing away from the perovskite composite layer (120); The first conductive line (114) and the second conductive line (133) are connected.

10. The method for preparing a perovskite battery according to claim 9, characterized in that: The method of forming the conductive line (113), the method of forming the second conductive line (133), and the method of connecting the second conductive line (133) and the first conductive line (114) include: printing, embossing, and screen printing.

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