Wafer repairing method, device and equipment and computer readable storage medium
By generating binary instructions to control the laser output laser beam during constant speed movement of the galvanometer, the problem of low processing efficiency of damaged chips on wafers in the prior art is solved, and more efficient wafer repair is achieved.
Patent Information
- Application Number
- CN202510094202.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-21
- Publication Date
- 2025-04-11
AI Technical Summary
When the prior art often damages chips on wafers, it is necessary to frequently control the start and stop of the galvanometer motor through laser processing, resulting in low processing efficiency.
By controlling the galvanometer to move at a preset speed along the preset processing track at a predetermined speed, and a binary command is generated when the galvanometer moves to the starting position, the laser intermittently outputs the laser beam based on the binary command, so that the galvanometer reflects the laser beam during the uniform speed movement to shoot down the chip to be repaired.
There is no need to start and stop the galvanometer motor frequently, which improves the laser processing efficiency of the chip to be repaired on the wafer.
Smart Images
Figure CN119794542A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of laser processing technology, and in particular to a wafer repair method, device, equipment and computer-readable storage medium. Background Art
[0002] As the basic material of integrated circuits, wafers have a large number of chips distributed evenly on their surface. The integrity of the chips on the wafer is the basis for ensuring that the wafer can realize its functions.
[0003] At present, when there are damaged chips on the wafer, a dot matrix processing method is usually used to transfer the chips on the wafer to replace new good chips. Specifically, the core steps of the dot matrix processing method include: first starting the galvanometer motor to move the galvanometer to the galvanometer reflection position corresponding to a damaged chip point, and then controlling the laser to emit a laser beam so that the galvanometer reflects the laser beam at the galvanometer reflection position corresponding to the damaged chip point to shoot down the damaged chip, and then controlling the galvanometer motor to restart, so that the galvanometer moves to the galvanometer reflection position corresponding to the next damaged chip point, and repeating the above steps of using the laser to shoot down the damaged chip until all the damaged chips on the original wafer are shot down. Therefore, when there are many damaged chips on the wafer, the method of laser processing each damaged chip one by one requires the galvanometer motor to be frequently started and stopped, which results in low processing efficiency.
[0004] Therefore, how to improve the efficiency of laser processing of damaged chips on the wafer is a problem that needs to be solved urgently. Summary of the invention
[0005] The main purpose of this application is to provide a wafer repair method, device, equipment and computer-readable storage medium, aiming to improve the efficiency of laser processing of damaged chips on the wafer.
[0006] To achieve the above-mentioned object, the present application provides a wafer repair method, the wafer repair method is applied to a wafer repair system, the wafer repair system includes a laser and a galvanometer, and the wafer repair method includes:
[0007] Control the galvanometer to move at a preset speed along a preset processing trajectory at a uniform speed, wherein the preset processing trajectory covers the galvanometer position corresponding to each chip on the wafer to be repaired, and the galvanometer position is the position where the laser beam reflected by the galvanometer can knock down the chip;
[0008] When the galvanometer moves to a starting galvanometer position among the galvanometer positions, a binary instruction is generated, wherein the starting galvanometer position is a starting position of the preset processing trajectory;
[0009] The laser intermittently outputs a laser beam based on the binary instruction, so that the laser beam reflected by the galvanometer in the process of uniformly moving along the preset processing trajectory can sequentially shoot down the chips to be repaired on the wafer to be repaired.
[0010] In one embodiment, the step of generating a binary instruction includes:
[0011] Obtaining the total number of all chips on the wafer to be repaired, and obtaining the order of the galvanometer positions corresponding to the chips to be repaired on the wafer to be repaired on the preset processing trajectory;
[0012] A binary string is generated based on the total number and the order, and a binary instruction is generated based on the binary string.
[0013] In one embodiment, the step of generating a binary string based on the total number and the order comprises:
[0014] The total number is taken as the number of binary characters, and each of the binary characters is assigned a value based on the order to obtain a binary character string.
[0015] In one embodiment, the step of assigning a value to each of the binary characters based on the order comprises:
[0016] Assigning a first value to each target character arranged in the order among the binary characters;
[0017] The binary characters other than the target character in the binary characters are assigned a second value, wherein the first value and the second value are binary numbers, and the first value and the second value are different.
[0018] In one embodiment, the step of intermittently outputting a laser beam based on the binary instruction by the laser comprises:
[0019] Acquire the binary string in the binary instruction by the laser;
[0020] According to the arrangement order of each binary character in the binary string, verifying one of the binary characters at intervals of a first preset time length to obtain a verification result;
[0021] The laser beam is intermittently output based on the verification result.
[0022] In one embodiment, the step of intermittently outputting a laser beam based on the verification result comprises:
[0023] When the verification result is that the binary character verified this time is the first value, a laser beam is output, wherein a single output duration of the laser beam is a second preset duration.
[0024] In one embodiment, the method further comprises:
[0025] Obtaining the spacing distance between the galvanometer positions corresponding to the adjacent chips on the wafer to be repaired;
[0026] The interval distance is divided by the preset speed to obtain the first preset time length.
[0027] In addition, to achieve the above-mentioned purpose, the present application also provides a wafer repair device, which is applied to a wafer repair system, wherein the wafer repair system includes a laser and a galvanometer, and the wafer repair device includes:
[0028] A control module, used to control the galvanometer to move at a preset speed along a preset processing trajectory at a uniform speed, wherein the preset processing trajectory covers the galvanometer position corresponding to each chip on the wafer to be repaired, and the galvanometer position is the position where the laser beam reflected by the galvanometer can shoot down the chip;
[0029] An instruction generation module, used for generating a binary instruction when the galvanometer moves to a starting galvanometer position among the galvanometer positions, wherein the starting galvanometer position is a starting position of the preset processing trajectory;
[0030] The processing module is used to intermittently output a laser beam through the laser based on the binary instruction, so that the laser beam reflected by the galvanometer in the process of uniformly moving along the preset processing trajectory can sequentially knock down each chip to be repaired on the wafer to be repaired.
[0031] In addition, to achieve the above-mentioned purpose, the present application also provides a storage medium, which is a computer-readable storage medium, and a program for implementing the wafer repair method is stored on the computer-readable storage medium. The program for implementing the wafer repair method is executed by a processor to implement the steps of the wafer repair method as described above.
[0032] In addition, to achieve the above-mentioned purpose, the present application also provides a computer program product, including a computer program, which implements the steps of the wafer repair method as described above when executed by a processor.
[0033] The present application provides a wafer repair method, which is applied to a wafer repair system, and the wafer repair system includes a laser and a galvanometer. The present application controls the galvanometer to move uniformly along a preset processing trajectory at a preset speed, and when the galvanometer moves to the starting galvanometer position in each galvanometer position, generates a binary instruction for the laser to intermittently output a laser beam based on the binary instruction, so that the laser beam reflected by the galvanometer during the uniform movement along the preset processing trajectory can sequentially shoot down each chip to be repaired on the wafer to be repaired, wherein it should be noted that the preset processing trajectory is a trajectory covering the galvanometer positions corresponding to all chips on the wafer to be repaired, the galvanometer position refers to the position where the laser beam reflected by the galvanometer can shoot down the chip, and the starting galvanometer position is the starting position of the preset processing trajectory.
[0034] In summary, the present application controls the galvanometer to move at a constant speed along a preset processing trajectory, and generates a binary instruction when the galvanometer moves to the starting position of the preset processing trajectory, so as to control the laser to intermittently output the laser beam based on the binary instruction during the uniform motion of the galvanometer, thereby sequentially shooting down each chip to be repaired on the wafer to be repaired through the laser beam reflected by the galvanometer. In this way, compared with the traditional dot matrix processing method that requires frequent start and stop of the galvanometer, the present application repairs the wafer while the galvanometer moves at a constant speed without repeated start and stop, thereby improving the efficiency of laser processing of each damaged chip to be repaired on the wafer. BRIEF DESCRIPTION OF THE DRAWINGS
[0035] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.
[0036] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.
[0037] Figure 1 This is a schematic diagram of the process of the first embodiment of the wafer repair method of the present application;
[0038] Figure 2 A schematic diagram of a parameter configuration interface involved in an embodiment of a wafer repair method of the present application;
[0039] Figure 3 A schematic diagram of the non-equidistant processing effect involved in an embodiment of the wafer repair method of the present application;
[0040] Figure 4 This is a schematic diagram of the module structure of the wafer repair device of the present application;
[0041] Figure 5 Schematic diagram of the equipment structure of the hardware operating environment involved in the wafer repair method in the embodiment of the present application.
[0042] The purpose, features and advantages of this application will be further described in conjunction with the embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION
[0043] It should be understood that the specific embodiments described herein are only used to explain the technical solutions of the present application and are not used to limit the present application.
[0044] In order to better understand the technical solution of the present application, a detailed description will be given below in conjunction with the accompanying drawings and specific implementation methods.
[0045] The main solution of the present application is: controlling the galvanometer to move at a preset speed along a preset processing trajectory at a uniform speed, wherein the preset processing trajectory covers the galvanometer position corresponding to each chip on the wafer to be repaired, and the galvanometer position is the position where the laser beam reflected by the galvanometer can shoot down the chip; when the galvanometer moves to the starting galvanometer position of each galvanometer position, generating a binary instruction, wherein the starting galvanometer position is the starting position of the preset processing trajectory; intermittently outputting a laser beam through the laser based on the binary instruction, so that the laser beam reflected by the galvanometer in the process of uniform movement along the preset processing trajectory can sequentially shoot down each chip to be repaired on the wafer to be repaired.
[0046] At present, when there are damaged chips on the wafer, a dot matrix processing method is usually used to transfer the chips on the wafer to replace new good chips. Specifically, the core steps of the dot matrix processing method include: first starting the galvanometer motor to move the galvanometer to the galvanometer reflection position corresponding to a damaged chip point, and then controlling the laser to emit a laser beam so that the galvanometer reflects the laser beam at the galvanometer reflection position corresponding to the damaged chip point to shoot down the damaged chip, and then controlling the galvanometer motor to restart, so that the galvanometer moves to the galvanometer reflection position corresponding to the next damaged chip point, and repeating the above steps of using the laser to shoot down the damaged chip until all the damaged chips on the original wafer are shot down. Therefore, when there are many damaged chips on the wafer, the method of laser processing each damaged chip one by one requires the galvanometer motor to be frequently started and stopped, which results in low processing efficiency.
[0047] Therefore, how to improve the efficiency of laser processing of damaged chips on the wafer is a problem that needs to be solved urgently.
[0048] The present application controls the galvanometer to move at a constant speed along a preset processing trajectory, and generates a binary instruction when the galvanometer moves to the starting position of the preset processing trajectory, so as to control the laser to intermittently output the laser beam based on the binary instruction during the uniform motion of the galvanometer, so as to sequentially shoot down each chip to be repaired on the wafer to be repaired by reflecting the laser beam through the galvanometer. In this way, compared with the traditional dot matrix processing method that requires frequent start and stop of the galvanometer, the present application repairs the wafer while the galvanometer moves at a constant speed without repeated start and stop, thereby improving the efficiency of laser processing of each damaged chip to be repaired on the wafer.
[0049] It should be noted that the execution subject of the method in each embodiment of the wafer repair method of the present application may be a wafer repair system, or a wafer repair device capable of realizing the above functions, etc., and this embodiment does not specifically limit this. Among them, the wafer repair system includes a laser and a galvanometer. The following takes the wafer repair system as an example to illustrate this embodiment and the following embodiments.
[0050] Based on this, the present application proposes a wafer repair method of the first embodiment, please refer to Figure 1 The wafer repair method includes steps S10 to S30:
[0051] Step S10, controlling the galvanometer to move at a preset speed along a preset processing trajectory at a uniform speed, wherein the preset processing trajectory covers the galvanometer position corresponding to each chip on the wafer to be repaired, and the galvanometer position is the position where the laser beam reflected by the galvanometer can shoot down the chip;
[0052] It should be noted that the wafer repair system of the present application includes a laser and a galvanometer, the laser is used to output a laser beam, and the galvanometer is used to work in conjunction with the laser to reflect the laser emitted by the laser to a specific point. The speed of the uniform motion of the galvanometer is preset, that is, the above-mentioned preset speed, wherein the embodiment of the present application does not limit the specific size of the above-mentioned preset speed. The wafer that needs to be repaired due to the presence of damaged chips is referred to as a wafer to be repaired. The processing trajectory of the current wafer repair is preset, that is, the above-mentioned preset processing trajectory. The preset processing trajectory refers to the trajectory covering the galvanometer positions corresponding to all the chips on the wafer to be repaired. It can be understood that the preset processing trajectory indicates the movement trajectory of the galvanometer, indicating that the galvanometer moves to each galvanometer position in sequence. The galvanometer position corresponding to the chip refers to the position where the laser beam emitted by the laser reflected by the galvanometer can shoot down the chip, wherein the positional relationship between the chip and the galvanometer is calibrated in advance to determine the galvanometer position corresponding to each chip on the wafer to be repaired.
[0053] The wafer repair system of the present application includes a control module, that is, a control card, which is respectively connected to the laser and the galvanometer for controlling the cooperation between the laser and the galvanometer so that the laser beam falls on a specific point to hit points with equal spacing. It should be understood that the control module has a PSO (Position Synchronized Output) function, and PSO can specifically be vPSO, where v represents the product function code. That is, the embodiment of the present application adds position synchronization output technology to the galvanometer control. The laser is provided with an external interface TRIG / GATE, which belongs to a BNC (Bayonet Neill-Concelman) interface for receiving trigger signals and control signals. The laser has a receiving window for TTL (Transistor-Transistor Logic) signals, which can identify and output a corresponding number of laser pulse beams in real time according to the high-frequency TTL signal given by the control card.
[0054] The control module controls the galvanometer motor (i.e., galvanometer motor) in the galvanometer to start, and drives the galvanometer to move at a constant speed along a preset processing trajectory at a preset speed.
[0055] Step S20, when the galvanometer moves to a starting galvanometer position among the galvanometer positions, generating a binary instruction, wherein the starting galvanometer position is a starting position of the preset processing trajectory;
[0056] It should be noted that the galvanometer position corresponding to the starting position of the preset processing trajectory is referred to as the starting galvanometer position for distinction.
[0057] The real-time position of the galvanometer is monitored, and when the galvanometer is detected to move to the starting galvanometer position among the galvanometer positions, a binary instruction is generated, wherein the binary instruction is used to instruct the laser to output a laser beam to shoot down the damaged chip on the wafer to be repaired, that is, the chip to be repaired.
[0058] Step S30, the laser intermittently outputs a laser beam based on the binary instruction, so that the laser beam reflected by the galvanometer in the process of uniformly moving along the preset processing trajectory sequentially shoots down each chip to be repaired on the wafer to be repaired.
[0059] While the galvanometer moves at a constant speed along the preset processing trajectory, the laser intermittently outputs a laser beam based on binary instructions, so that the laser beam reflected by the galvanometer sequentially hits each repair chip on the wafer to be repaired.
[0060] The embodiment of the present application controls the galvanometer to move at a constant speed along a preset processing trajectory, and generates a binary instruction when the galvanometer moves to the starting position of the preset processing trajectory, so as to control the laser to intermittently output the laser beam based on the binary instruction during the uniform motion of the galvanometer, so as to sequentially shoot down each chip to be repaired on the wafer to be repaired by reflecting the laser beam through the galvanometer. In this way, compared with the traditional dot matrix processing method that requires frequent start and stop of the galvanometer, the present application repairs the wafer while the galvanometer moves at a constant speed without repeated start and stop, thereby improving the efficiency of laser processing of each damaged chip to be repaired on the wafer.
[0061] Based on the first embodiment of the present application, in the second embodiment of the present application, the same or similar contents as those in the above-mentioned embodiment 1 can refer to the above introduction, and will not be repeated later. Figure 2 , the step S20 may include:
[0062] Step S201, obtaining the total number of all chips on the wafer to be repaired, and obtaining the order of the galvanometer positions corresponding to the chips to be repaired on the wafer to be repaired on the preset processing trajectory;
[0063] It should be noted that after the wafer to be repaired is repaired, the distribution of each chip on the wafer to be repaired, the total number of chips and the distribution of damaged chips are obtained in advance.
[0064] The total number of all chips on the wafer to be repaired is obtained, and the order of the galvanometer positions corresponding to each chip to be repaired on the wafer to be repaired on the preset processing trajectory is obtained. It should be understood that the preset processing trajectory is directional, which represents the order in which the galvanometer moves to each galvanometer position, so the order of the true and false positions corresponding to each chip to be repaired on the preset processing trajectory can be determined based on the order of the galvanometer positions corresponding to each chip on the trajectory.
[0065] Step S202: Generate a binary string based on the total number and the order, and generate a binary instruction based on the binary string.
[0066] After obtaining the total number of chips and the order of the galvanometer positions corresponding to the chips to be repaired on the preset processing trajectory, a binary string is generated based on the total number and the order, and the binary string is encapsulated to obtain a binary instruction.
[0067] In this embodiment, the step S202 may include:
[0068] Step A10, taking the total number as the number of binary characters, assigning a value to each of the binary characters based on the order to obtain a binary character string.
[0069] The total number of all chips on the wafer to be repaired is taken as the number of binary characters in the binary string, that is, each chip on the wafer to be repaired corresponds to a binary character, and the order of the galvanometer positions corresponding to the chips in the preset processing trajectory is the same as the order of the binary characters corresponding to the chip in the binary string. And the binary characters are assigned values based on the order of the galvanometer positions corresponding to the chips to be repaired in the preset processing trajectory to obtain a binary string.
[0070] In this embodiment, the step A10 may include:
[0071] Step A10, assigning a first value to each target character arranged in the order in the binary characters;
[0072] Step A10: assigning a second value to each binary character except the target character, wherein the first value and the second value are binary numbers, and the first value and the second value are different.
[0073] It should be noted that the value of a binary character is 1 or 0, and the two values of the binary character are respectively referred to as a first value and a second value for distinction. In the embodiment of the present application, the first value is 1 and the second value is 0.
[0074] The binary characters in the order corresponding to the chip to be repaired (hereinafter referred to as target characters for distinction) are assigned a first value, and the binary characters other than the target characters are assigned a second value. That is, the binary characters corresponding to the chip to be repaired are assigned a value of 1, and the binary characters other than the binary characters corresponding to the chip to be repaired are assigned a value of 0.
[0075] For example, assuming that there are 10 chips on the wafer to be repaired, and the galvanometer positions corresponding to the chips to be repaired are in the order of the first, third, sixth and tenth positions on the preset processing trajectory, then the number of binary characters can be determined to be 10 based on the total number of chips, and each binary character can be assigned a value based on the above order, and the resulting binary string can be expressed as 1010010001.
[0076] In this embodiment, the step S30 may include:
[0077] Step S301, obtaining the binary string in the binary instruction through the laser;
[0078] It should be noted that the binary instruction is generated by the control module when the galvanometer moves to the starting galvanometer position, and is sent to the laser by the control module. After receiving the binary instruction, the laser parses the binary instruction to obtain the binary string in the binary instruction.
[0079] Step S302, verifying one of the binary characters at intervals of a first preset time according to the arrangement order of the binary characters in the binary string, to obtain a verification result;
[0080] It should be noted that the chips on the wafer to be repaired are evenly distributed, that is, the spacing between each two adjacent chips is equal. A first preset time length is predetermined, and the first preset time length represents the time required for the galvanometer to move from a galvanometer position corresponding to one chip to a galvanometer position corresponding to an adjacent chip at a preset speed.
[0081] According to the arrangement order of each binary character in the binary string, one binary character is verified every first preset time interval, and a verification result is obtained.
[0082] In one feasible implementation, when the galvanometer is monitored to move to the starting galvanometer position, a binary instruction is generated, and the first binary character in the binary instruction is verified by a laser to determine whether to emit a laser beam based on the value of the binary character. It should be understood that the chip corresponding to the first binary character is the chip corresponding to the starting galvanometer position (hereinafter referred to as the starting chip for distinction), so when the galvanometer moves to the starting galvanometer position, it is time to verify the first binary character, and determine whether to output a laser beam to process the starting chip based on the verification result of the first binary character. Then, based on the arrangement order of the binary characters in the binary string, one binary character is verified every first preset time interval to determine whether to process each chip arranged behind the starting chip.
[0083] Step S303: intermittently outputting a laser beam based on the verification result.
[0084] The laser intermittently outputs a laser beam based on the verification result obtained each time. It should be understood that each time the laser verifies a binary character, it is equivalent to executing a judgment on whether to output a laser beam, and each verification result acts independently, and each verification result only affects the processing of the chip corresponding to the verification result.
[0085] In this embodiment, the step S303 may include:
[0086] Step B10, when the verification result is that the binary character verified this time is the first numerical value, output a laser beam, wherein the single output duration of the laser beam is a second preset duration.
[0087] It should be noted that the binary string in the binary instruction is used to instruct whether the laser emits light. When the binary character is 1, it indicates that the laser emits light, and when the binary character is 0, it indicates that the laser does not emit light. The duration of the laser beam output by the laser once is preset, that is, the second preset duration. The embodiment of the present application does not limit the specific size of the second preset duration.
[0088] When the verification result is that the binary character verified this time is the first value, the laser beam is output through the laser, and after the time of continuously outputting the laser beam reaches a second preset time length, the laser beam output is stopped.
[0089] In this embodiment, the wafer repair method of the present application further includes:
[0090] Step C10, obtaining the spacing distance between the galvanometer positions corresponding to the adjacent chips on the wafer to be repaired;
[0091] Step C20: Divide the interval distance by the preset speed to obtain the first preset time length.
[0092] It is worth emphasizing that the chips on the wafer to be repaired are evenly distributed, and the distance between every two adjacent chips is equal. In addition, the preset processing trajectory refers to a trajectory connecting the galvanometer positions corresponding to each adjacent chip on the wafer to be repaired, so the distance between any two adjacent galvanometer positions on the preset processing trajectory is equal.
[0093] Obtain the spacing distance between the galvanometer positions corresponding to adjacent chips on the wafer to be repaired, and then divide the spacing distance by the preset speed of the galvanometer when it moves at a constant speed. The result is the time required for the galvanometer to move from one galvanometer position on the preset processing trajectory to an adjacent galvanometer position, that is, the first preset time mentioned above.
[0094] In one feasible implementation, a constant speed is pre-set for the uniform motion of the galvanometer. The point spacing between adjacent chips on the wafer to be repaired is determined, so as to determine the spacing between any adjacent galvanometer positions based on the distribution of chips on the wafer to be repaired and the mapping relationship between the chip and the galvanometer position. And the processing trajectory for laser processing the current wafer to be processed is pre-set. Then, the galvanometer is controlled to move uniformly along the preset processing trajectory at a preset speed, and the real-time position of the galvanometer is monitored. When the real-time position of the galvanometer reaches the starting galvanometer position, a binary instruction is generated to control the laser to intermittently output the laser beam, and the galvanometer reflects the laser beam to the chip to be repaired.
[0095] For example, Figure 2The figure shows a schematic diagram of the parameter configuration interface. The user can pre-set the uniform motion speed of the galvanometer to 3000mm / s, determine the point spacing between chips to 600 microns, preset the processing trajectory to a bow-shaped surround trajectory, and the galvanometer correction accuracy is less than 5 microns, that is, the errors between processing points, between rows, starting point errors, end point errors and total length errors are all controlled within 3 microns, which meets the processing requirements. In addition, since the processing accuracy is affected by the galvanometer correction accuracy, if the processing accuracy is to be improved, the quality of the galvanometer can be appropriately improved to improve the accuracy of the galvanometer correction. The wafer to be processed is laser processed with the above-set parameters to obtain the final laser landing effect, as shown in the figure. Figure 3 The figure shows a schematic diagram of non-equidistant machining effect, and the binary string corresponding to the diagram is 11111 10101 11001 11111. The starting point of the bow-shaped machining trajectory corresponding to the diagram is the leftmost point in the fourth row, and the ending point is the rightmost point in the first row.
[0096] In this way, the embodiment of the present application verifies one binary bit at a first preset time interval by the laser according to the arrangement order of each binary character in the binary string, and at the same time controls the galvanometer to run at a preset speed, so that when the laser emits a laser beam, the galvanometer can reflect the laser beam to the chip corresponding to the binary character verified at that time, that is, the chip to be repaired, thereby realizing the processing of each chip to be repaired on the wafer, thereby reducing the scrapping of the wafer, especially for the expensive MicroLED (Micro Light Emitting Diode), saving the scrapping cost. And the galvanometer control strategy in this application does not require the galvanometer to start and stop frequently, but runs at a constant speed, which plays a role in improving the efficiency of wafer repair.
[0097] The present application also provides a wafer repair device, please refer to Figure 4 The wafer repair device is applied to a wafer repair system, the wafer repair system includes a laser and a galvanometer, and the wafer repair device includes:
[0098] A control module 10 is used to control the galvanometer to move at a preset speed along a preset processing trajectory at a uniform speed, wherein the preset processing trajectory covers the galvanometer position corresponding to each chip on the wafer to be repaired, and the galvanometer position is the position where the laser beam reflected by the galvanometer can shoot down the chip;
[0099] An instruction generating module 20, configured to generate a binary instruction when the galvanometer moves to a starting galvanometer position among the galvanometer positions, wherein the starting galvanometer position is a starting position of the preset processing trajectory;
[0100] The processing module 30 is used to intermittently output a laser beam through the laser based on the binary instruction, so that the laser beam reflected by the galvanometer in the process of uniformly moving along the preset processing trajectory can sequentially knock down each chip to be repaired on the wafer to be repaired.
[0101] Optionally, the instruction generating module 20 is further used for:
[0102] Obtaining the total number of all chips on the wafer to be repaired, and obtaining the order of the galvanometer positions corresponding to the chips to be repaired on the wafer to be repaired on the preset processing trajectory;
[0103] A binary string is generated based on the total number and the order, and a binary instruction is generated based on the binary string.
[0104] Optionally, the instruction generating module 20 is further used for:
[0105] The total number is taken as the number of binary characters, and each of the binary characters is assigned a value based on the order to obtain a binary character string.
[0106] Optionally, the instruction generating module 20 is further used for:
[0107] Assigning a first value to each target character arranged in the order among the binary characters;
[0108] The binary characters other than the target character in the binary characters are assigned a second value, wherein the first value and the second value are binary numbers, and the first value and the second value are different.
[0109] Optionally, the processing module 30 is further used for:
[0110] Acquire the binary string in the binary instruction by the laser;
[0111] According to the arrangement order of each binary character in the binary string, verifying one of the binary characters at intervals of a first preset time length to obtain a verification result;
[0112] The laser beam is intermittently output based on the verification result.
[0113] Optionally, the processing module 30 is further used for:
[0114] When the verification result is that the binary character verified this time is the first value, a laser beam is output, wherein a single output duration of the laser beam is a second preset duration.
[0115] Optionally, the wafer repair device further includes a duration determination module, and the duration determination module is used to:
[0116] Obtaining the spacing distance between the galvanometer positions corresponding to the adjacent chips on the wafer to be repaired;
[0117] The interval distance is divided by the preset speed to obtain the first preset time length.
[0118] The wafer repair device provided in the embodiment of the present application adopts the wafer repair method in the above embodiment, which can solve the technical problem of how to improve the efficiency of laser processing of damaged chips on the wafer. Compared with the prior art, the beneficial effects of the wafer repair device provided in the embodiment of the present application are the same as the beneficial effects of the wafer repair method provided in the above embodiment, and the other technical features in the wafer repair device are the same as the features disclosed in the above embodiment method, which will not be repeated here.
[0119] The present application provides a wafer repair device, which includes: at least one processor; and a memory that is communicatively connected to the at least one processor; wherein the memory stores instructions that can be executed by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the wafer repair method in the above-mentioned embodiment one.
[0120] Reference below Figure 5 , which shows a schematic structural diagram of a wafer repair device suitable for implementing an embodiment of the present application. Figure 5 The wafer repair equipment shown is merely an example and should not bring any limitation to the functions and scope of use of the embodiments of the present application.
[0121] like Figure 5As shown, the wafer repair equipment may include a processing device 1001 (such as a central processing unit, a graphics processor, etc.), which can perform various appropriate actions and processes according to a program stored in a read-only memory (ROM: Read Only Memory) 1002 or a program loaded from a storage device 1003 to a random access memory (RAM: Random Access Memory) 1004. In RAM1004, various programs and data required for the operation of the wafer repair equipment are also stored. The processing device 1001, ROM1002 and RAM1004 are connected to each other through a bus 1005. An input / output (I / O) interface 1006 is also connected to the bus. Generally, the following systems can be connected to the I / O interface 1006: an input device 1007 including, for example, a touch screen, a touch pad, a keyboard, a mouse, an image sensor, a microphone, an accelerometer, a gyroscope, etc.; an output device 1008 including, for example, a liquid crystal display (LCD: Liquid Crystal Display), a speaker, a vibrator, etc.; a storage device 1003 including, for example, a magnetic tape, a hard disk, etc.; and a communication device 1009. The communication device 1009 can allow the wafer repair device to communicate with other devices wirelessly or wired to exchange data. Although the figure shows a wafer repair device with various systems, it should be understood that it is not required to implement or have all the systems shown. More or fewer systems can be implemented or have alternatively.
[0122] In particular, according to the embodiments disclosed in the present application, the process described above with reference to the flowchart can be implemented as a computer software program. For example, the embodiments disclosed in the present application include a computer program product, which includes a computer program carried on a computer-readable medium, and the computer program includes a program code for executing the method shown in the flowchart. In such an embodiment, the computer program can be downloaded and installed from a network through a communication device, or installed from a storage device 1003, or installed from a ROM 1002. When the computer program is executed by the processing device 1001, the above-mentioned functions defined in the method of the embodiment disclosed in the present application are executed.
[0123] The wafer repair device provided by the present application adopts the wafer repair method in the above embodiment, which can solve the technical problem of how to improve the efficiency of laser processing of damaged chips on the wafer. Compared with the prior art, the beneficial effects of the wafer repair device provided by the present application are the same as the beneficial effects of the wafer repair method provided by the above embodiment, and the other technical features in the wafer repair device are the same as the features disclosed in the method of the previous embodiment, which will not be repeated here.
[0124] It should be understood that the various parts disclosed in this application can be implemented by hardware, software, firmware or a combination thereof. In the description of the above embodiments, specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.
[0125] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.
[0126] The present application provides a computer-readable storage medium having computer-readable program instructions (ie, computer programs) stored thereon, and the computer-readable program instructions are used to execute the wafer repair method in the above-mentioned embodiment.
[0127] The computer-readable storage medium provided in the present application may be, for example, a USB flash drive, but is not limited to electrical, magnetic, optical, electromagnetic, infrared, or semiconductor systems, systems or devices, or any combination of the above. More specific examples of computer-readable storage media may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In this embodiment, the computer-readable storage medium may be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, system or device. The program code contained on the computer-readable storage medium may be transmitted using any appropriate medium, including but not limited to: wires, optical cables, RF (Radio Frequency), etc., or any suitable combination of the above.
[0128] The computer-readable storage medium may be included in the wafer repair equipment; or may exist independently without being assembled into the wafer repair equipment.
[0129] The computer-readable storage medium carries one or more programs. When the one or more programs are executed by the wafer repair equipment, the wafer repair equipment: controls the galvanometer to move at a preset speed along a preset processing trajectory at a uniform speed, wherein the preset processing trajectory covers the galvanometer position corresponding to each chip on the wafer to be repaired, and the galvanometer position is the position where the laser beam reflected by the galvanometer can shoot down the chip; when the galvanometer moves to the starting galvanometer position of each galvanometer position, generates a binary instruction, wherein the starting galvanometer position is the starting position of the preset processing trajectory; intermittently outputs a laser beam through the laser based on the binary instruction, so that the laser beam reflected by the galvanometer in the process of uniform movement along the preset processing trajectory can sequentially shoot down each chip to be repaired on the wafer to be repaired.
[0130] Computer program code for performing the operations of the present application may be written in one or more programming languages or a combination thereof, including object-oriented programming languages such as Java, Smalltalk, C++, and conventional procedural programming languages such as "C" or similar programming languages. The program code may be executed entirely on the user's computer, partially on the user's computer, as a separate software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer (e.g., via the Internet using an Internet service provider).
[0131] The flow chart and block diagram in the accompanying drawings illustrate the possible architecture, function and operation of the system, method and computer program product according to various embodiments of the present application. In this regard, each square box in the flow chart or block diagram can represent a module, a program segment or a part of a code, and the module, the program segment or a part of the code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the square box can also occur in a sequence different from that marked in the accompanying drawings. For example, two square boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each square box in the block diagram and / or flow chart, and the combination of the square boxes in the block diagram and / or flow chart can be implemented with a dedicated hardware-based system that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.
[0132] The modules involved in the embodiments described in this application may be implemented by software or hardware, wherein the name of the module does not constitute a limitation on the unit itself in some cases.
[0133] The readable storage medium provided in the present application is a computer-readable storage medium, which stores computer-readable program instructions (i.e., computer programs) for executing the above-mentioned wafer repair method, and can solve the technical problem of how to improve the efficiency of laser processing of damaged chips on the wafer. Compared with the prior art, the beneficial effects of the computer-readable storage medium provided in the present application are the same as the beneficial effects of the wafer repair method provided in the above-mentioned embodiment, and will not be described in detail here.
[0134] An embodiment of the present application provides a computer program product, including a computer program, which implements the steps of the wafer repair method as described above when executed by a processor.
[0135] The computer program product provided in this application can improve the efficiency of laser processing of damaged chips on a wafer. Compared with the prior art, the beneficial effects of the computer program product provided in the embodiment of this application are the same as the beneficial effects of the wafer repair method provided in the above embodiment, which will not be described in detail here.
[0136] The above are only preferred embodiments of the present application, and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent processing scope of the present application.
Claims
1. A wafer repair method, characterized in that: The wafer repair method is applied to a wafer repair system, the wafer repair system includes a laser and a galvanometer, and the wafer repair method includes: Control the galvanometer to move at a preset speed along a preset processing trajectory at a uniform speed, wherein the preset processing trajectory covers the galvanometer position corresponding to each chip on the wafer to be repaired, and the galvanometer position is the position where the laser beam reflected by the galvanometer can knock down the chip; When the galvanometer moves to a starting galvanometer position among the galvanometer positions, a binary instruction is generated, wherein the starting galvanometer position is a starting position of the preset processing trajectory; The laser intermittently outputs a laser beam based on the binary instruction, so that the laser beam reflected by the galvanometer in the process of uniformly moving along the preset processing trajectory can sequentially shoot down the chips to be repaired on the wafer to be repaired.
2. The method according to claim 1, characterized in that The step of generating a binary instruction comprises: Obtaining the total number of all chips on the wafer to be repaired, and obtaining the order of the galvanometer positions corresponding to the chips to be repaired on the wafer to be repaired on the preset processing trajectory; A binary string is generated based on the total number and the order, and a binary instruction is generated based on the binary string.
3. The method according to claim 2, characterized in that The step of generating a binary string based on the total number and the order comprises: The total number is taken as the number of binary characters, and each of the binary characters is assigned a value based on the order to obtain a binary character string.
4. The method according to claim 3, characterized in that The step of assigning a value to each of the binary characters based on the order comprises: Assigning a first value to each target character arranged in the order among the binary characters; The binary characters other than the target character in the binary characters are assigned a second value, wherein the first value and the second value are binary numbers, and the first value and the second value are different.
5. The method according to claim 4, characterized in that The step of intermittently outputting a laser beam based on the binary instruction by the laser comprises: Acquire the binary string in the binary instruction by the laser; According to the arrangement order of each binary character in the binary string, verifying one of the binary characters at intervals of a first preset time length to obtain a verification result; The laser beam is intermittently output based on the verification result.
6. The method according to claim 5, characterized in that The step of intermittently outputting a laser beam based on the verification result comprises: When the verification result is that the binary character verified this time is the first value, a laser beam is output, wherein a single output duration of the laser beam is a second preset duration.
7. The method according to claim 5, characterized in that The method further comprises: Obtaining the spacing distance between the galvanometer positions corresponding to the adjacent chips on the wafer to be repaired; The interval distance is divided by the preset speed to obtain the first preset time length.
8. A wafer repair device, characterized in that: The wafer repair device is applied to a wafer repair system, the wafer repair system includes a laser and a galvanometer, and the wafer repair device includes: A control module, used to control the galvanometer to move at a preset speed along a preset processing trajectory at a uniform speed, wherein the preset processing trajectory covers the galvanometer position corresponding to each chip on the wafer to be repaired, and the galvanometer position is the position where the laser beam reflected by the galvanometer can shoot down the chip; An instruction generation module, used for generating a binary instruction when the galvanometer moves to a starting galvanometer position among the galvanometer positions, wherein the starting galvanometer position is a starting position of the preset processing trajectory; The processing module is used to intermittently output a laser beam through the laser based on the binary instruction, so that the laser beam reflected by the galvanometer in the process of uniformly moving along the preset processing trajectory can sequentially knock down each chip to be repaired on the wafer to be repaired.
9. A wafer repair device, characterized in that: The wafer repair device comprises: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the computer program is configured to implement the steps of the wafer repair method according to any one of claims 1 to 7.
10. A storage medium, characterized in that: The storage medium is a computer-readable storage medium, and a computer program is stored on the computer-readable storage medium. When the computer program is executed by a processor, the steps of the wafer repair method according to any one of claims 1 to 7 are implemented.