High-temperature-resistant epoxy resin potting adhesive for semiconductor packaging

Abstract

The application relates to a high-temperature-resistant epoxy resin pouring sealant for semiconductor packaging and belongs to the technical field of epoxy resin pouring sealants. Based on silicon hydrogen addition, a compound with one end of a silicon hydrogen bond and one end of an epoxy group is prepared by using hydrogen-containing double sealing heads and allyl glycidyl ether, so that the compound continues to complete the grafting of the epoxy group based on the silicon hydrogen addition to the silicon dioxide modified by the double bond of vinyl trimethoxysilane, then the ring-opening bonding of the epoxy-amino is carried out by adding p-phenylenediamine, the benzene ring structure is constructed, the terminal amino group is formed, finally, the quaternary pentanetetraol glycidyl ether is used as a modifier, further ring-opening bonding is carried out, modified filler A is prepared, the modified filler A is mixed with the epoxy resin to serve as the A component, the curing agent, the accelerator and the filler B are mixed to serve as the B component, and thus the pouring sealant for semiconductor packaging is obtained, the pouring sealant has high Tg temperature, low linear expansion coefficient, high Td temperature and excellent high-temperature resistance.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of epoxy resin pouring sealant and specifically relates to a high-temperature-resistant epoxy resin pouring sealant for semiconductor packaging. BACKGROUND

[0002] In the field of semiconductors, packaging technology plays a crucial role in ensuring the performance and reliability of semiconductor devices. Epoxy resin pouring sealant has now been used as a common packaging material in semiconductor devices due to its excellent mechanical strength and bonding performance. However, existing epoxy resin pouring sealants still have certain drawbacks that limit their actual application effects. This is because the existing epoxy resin pouring sealants have limited high-temperature resistance. In certain specific scenarios such as packaging high-power semiconductors, welding, and post-packaging aging tests, the performance of the sealant can be severely degraded due to high temperatures, ultimately failing to achieve the desired effects. SUMMARY

[0003] To solve the problems in the prior art, the application aims to provide a high-temperature-resistant epoxy resin pouring sealant for semiconductor packaging. The application uses hydrogen-containing double caps and allyl glycidyl ether to prepare a compound with a silicon-hydrogen bond at one end and an epoxy group at the other end based on silicon-hydrogen addition. The compound is then used to graft an epoxy group to silica modified by vinyl trimethoxysilane double bonds based on silicon-hydrogen addition. Then, p-phenylenediamine is added to open the ring bond between the epoxy group and the amino group, build a benzene ring structure, and form an amino group at the end. Finally, pentaerythritol glycidyl ether is used as a modifier to further open the ring bond, thereby preparing modified filler A. The modified filler A and epoxy resin are mixed to form component A, while the curing agent, accelerator, and filler B are mixed to form component B. Thus, a pouring sealant for semiconductor packaging is obtained, which has a high Tg temperature, a low linear expansion coefficient, and a high Td temperature, and excellent high-temperature resistance.

[0004] The object of the application can be achieved by the following technical solutions:

[0005] A high-temperature-resistant epoxy resin pouring sealant for semiconductor packaging, which comprises 100 parts by weight of component A and 30-35 parts by weight of component B. The component A is obtained by mixing epoxy resin and modified filler A. The component B is obtained by mixing a curing agent, an accelerator, and filler B.

[0006] As a preferred technical solution of the application, the mass ratio of the epoxy resin to the modified filler A is 100:30-35. The mass ratio of the curing agent, the accelerator, and the filler B is 100:0.5-1:10.

[0007] As a preferred technical solution of the application, the modified filler A is prepared by the following steps:

[0008] Step A: 6 parts by weight of the first platinum catalyst is added to 18-20 parts by weight of 1,1,3,3-tetramethyldisiloxane, then 5 parts by weight of allyl glycidyl ether is added dropwise under nitrogen atmosphere at 60-65°C while stirring, after the dropwise addition is completed, constant temperature stirring is continued for 6-8h, filtration is performed to remove the filter residue, distillation is performed to remove the volatile matter, and the first component is obtained;

[0009] Step B: 2 parts by weight of the double bond modified silica, 2-3 parts by weight of the first component, and 0.2 parts by weight of the second platinum catalyst are added to 80 parts by weight of tetrahydrofuran, then stirring is performed at 60-70°C under nitrogen atmosphere for 8-10h, filtration is performed to remove the filter residue, washing is performed using toluene, and finally vacuum drying is performed at 60-80°C until the constant weight is obtained, and the second component is obtained;

[0010] Step C: 4 parts by weight of p-phenylenediamine is added to 80 parts by weight of dimethyl sulfoxide, then stirring is performed at 60-70°C for 1h, and then 2-3 parts by weight of the second component is added, and stirring is continued for 8-10h, filtration is performed to remove the filter residue, washing is performed using deionized water, and finally vacuum drying is performed at 60-80°C until the constant weight is obtained, and the third component is obtained;

[0011] Step D: 6 parts by weight of pentaerythritol glycidyl ether is added to 80 parts by weight of dimethyl sulfoxide, then mixing is performed at room temperature for 5-10min, and then 2-3 parts by weight of the third component is added, and stirring is performed at 70-75°C for 8-10h, filtration is performed to remove the filter residue, washing is performed using toluene, and finally vacuum drying is performed at 50-70°C until the constant weight is obtained.

[0012] Further, the dropwise addition rate in Step A is controlled at 1-2 drops / s.

[0013] Further, the distillation in Step A refers to distillation at 71°C for 2h to remove the volatile matter.

[0014] Further, the double bond modified silica in Step B is prepared by the following steps:

[0015] 2 parts by weight of silica, 1-1.5 parts by weight of vinyltrimethoxysilane, and 0.1-0.3 parts by weight of deionized water are added to 80 parts by weight of anhydrous ethanol, then stirring is performed at 70°C for 12h, filtration is performed to remove the filter residue, washing is performed using deionized water, and finally vacuum drying is performed at 70°C until the constant weight is obtained.

[0016] As a preferred technical solution of the present application, the curing agent is methyl hexahydrophthalic anhydride.

[0017] As a preferred technical solution of the present application, the accelerator is DMP-30 accelerator.

[0018] As a preferred technical solution of the present application, the filler B is silicon dioxide or boron nitride.

[0019] A preparation method of a high-temperature-resistant epoxy resin pouring sealant for semiconductor packaging, the preparation method comprising the following steps:

[0020] (1) Preparation of Component A: Mix the epoxy resin and modified filler A at a stirring speed of 100-400 rpm at room temperature for 5-10 min, and store in a sealed manner;

[0021] (2) Preparation of Component B: Mix the curing agent, accelerator and filler B at a stirring speed of 500 rpm at room temperature for 5-10 min, and store in a sealed manner.

[0022] A use method of a high-temperature-resistant epoxy resin pouring sealant for semiconductor packaging, the use method comprising the following steps:

[0023] Mix Component A and Component B at a stirring speed of 200-400 rpm at room temperature for 5 min, vacuum degassing for 5 min, pouring, and finally curing at 120-125℃ for 2 h.

[0024] The present application has the following advantages:

[0025] (1) The present application utilizes hydrogen-containing double seal head and allyl glycidyl ether based on silicon hydrogen addition to prepare a compound with one end of silicon hydrogen bond and one end of epoxy group, so that it continues to complete the grafting of epoxy group based on silicon hydrogen addition on the silicon dioxide modified by vinyl trimethoxysilane double bond, then through the addition of p-phenylenediamine, the ring-opening bonding of epoxy-amino is carried out, the benzene ring structure is constructed and the terminal amino group is formed, finally, pentaerythritol glycidyl ether is used as a modifier to further carry out ring-opening bonding, i.e. to prepare modified filler A, which is mixed with epoxy resin as Component A, and the curing agent, accelerator and filler B are mixed as Component B, so as to obtain a pouring sealant for semiconductor packaging, which not only has high Tg temperature, low linear expansion coefficient, but also has high Td temperature, and excellent high-temperature resistance.

[0026] (2) The present application is based on the preparation of a compound with one end of a silicon-hydrogen bond and one end of an epoxy group by using a hydrogen-containing double sealing head (excess) and an allyl glycidyl ether for silicon-hydrogen addition, so that the epoxy group can continue to be grafted based on silicon-hydrogen addition on the silica modified by the double bond of vinyl trimethoxysilane. On the one hand, the epoxy group can lay the foundation for the next technical improvement, and on the other hand, the introduction of Si-O bond can greatly improve the thermal stability and increase the decomposition temperature (Td). However, since the Si-O bond itself also has a certain flexibility, it can enhance the movement of the molecular chain in the polymer structure of the epoxy resin, resulting in a decrease in the glass transition temperature (Tg). Based on this, p-phenylenediamine (excess) is added to open the ring bond of the epoxy group-amino group, build a benzene ring structure and form an end amino group. The benzene ring structure is rigid and has good high-temperature resistance, and its introduction can play a role in spatial constraint for the Si-O-Si chain segment, thereby reducing the movement of the molecular chain and improving the adverse effects brought by the aforementioned Si-O bond, increasing the Tg and Td temperatures. Finally, pentaerythritol glycidyl ether (excess) is used as a modifier to convert the end amino group into an end epoxy group, i.e. to prepare modified filler A. From the molecular structure, pentaerythritol glycidyl ether contains four epoxy groups, and its introduction can greatly increase the crosslinking density and play the role of chemical crosslinking point, which has a good promoting effect on both Tg and Td.

[0027] (3) The present application adds modified filler A to give the prepared potting adhesive for semiconductor packaging excellent high-temperature resistance, not only high Tg, low linear expansion coefficient, but also high Td, which has very strong practicality. DETAILED DESCRIPTION

[0028] In order to further illustrate the technical means and effects adopted by the present application to achieve the predetermined object, the specific embodiments, structures, features and effects according to the present application are described in detail below in combination with examples.

[0029] The epoxy resins in all examples and comparative examples of the present application are purchased from Wuxi Xinyehao Chemical Co., Ltd., and the model number is E-52 (618); the first platinum catalysts are purchased from Shaanxi Ruikexin Material Co., Ltd., and the product name is platinum-carbon; the second platinum catalysts are purchased from Suzhou Betley Polymer Material Co., Ltd., and the product name is platinum-gold catalyst, and the model number is CSAT-F7xxxx.

[0030] The silicon dioxide is all nano-silicon dioxide, and the particle size is 30 nm.

[0031] Example 1

[0032] The application discloses a high-temperature-resistant epoxy resin potting adhesive for semiconductor packaging, which comprises 100 parts by weight of an A component and 30 parts by weight of a B component; the A component is prepared by mixing an epoxy resin and modified filler A; and the B component is prepared by mixing a curing agent, an accelerator and filler B.

[0033] The mass ratio of the epoxy resin and the modified filler A is 100:30; and the mass ratio of the curing agent, the accelerator and the filler B is 100:0.5:10.

[0034] The modified filler A is prepared by the following steps:

[0035] Step A: 6 parts by weight of a first platinum catalyst is added into 18 parts by weight of 1,1,3,3-tetramethyldisiloxane, then 5 parts by weight of allyl glycidyl ether is added dropwise under stirring at 60 DEG C in a nitrogen atmosphere, after the dropwise addition is completed, constant temperature stirring is continued for 6 hours, filtration is conducted, the filter residue is removed, distillation is conducted, and a first component is obtained;

[0036] Step B: 2 parts by weight of double bond modified silica, 2 parts by weight of the first component and 0.2 parts by weight of a second platinum catalyst are added into 80 parts by weight of tetrahydrofuran, then stirring is conducted at 60 DEG C in a nitrogen atmosphere for 8 hours, filtration is conducted, the filter residue is removed, washing is conducted with toluene, and finally vacuum drying is conducted at 60 DEG C until the weight is constant, so as to obtain a second component;

[0037] Step C: 4 parts by weight of p-phenylenediamine is added into 80 parts by weight of dimethyl sulfoxide, then stirring is conducted at 60 DEG C for 1 hour, 2 parts by weight of the second component is added, stirring is continued for 8 hours, filtration is conducted, the filter residue is removed, washing is conducted with deionized water, and finally vacuum drying is conducted at 60 DEG C until the weight is constant, so as to obtain a third component;

[0038] Step D: 6 parts by weight of pentaerythritol glycidyl ether is added into 80 parts by weight of dimethyl sulfoxide, then mixing is conducted under stirring at room temperature for 5 minutes, 2 parts by weight of the third component is added, stirring is conducted at 70 DEG C for 8 hours, filtration is conducted, the filter residue is removed, washing is conducted with toluene, and finally vacuum drying is conducted at 50 DEG C until the weight is constant.

[0039] The dropwise adding speed in step A is controlled to be 1 drop / s.

[0040] The distillation in step A refers to distillation at 71 DEG C for 2 hours to remove volatile matters.

[0041] The double bond modified silica in step B is prepared by the following steps:

[0042] To 80 parts by weight of anhydrous ethanol, 2 parts by weight of silicon dioxide, 1 part by weight of vinyl trimethoxysilane and 0.1 part by weight of deionized water are added, then stirred at 70°C for 12h, filtered, the filtrate is removed, washed with deionized water, and finally dried under vacuum at 70°C until constant weight, i.e. the preparation is complete.

[0043] The curing agent is methyl hexahydrophthalic anhydride.

[0044] The accelerator is DMP-30 accelerator.

[0045] The filler B is silicon dioxide.

[0046] A preparation method of a high-temperature-resistant epoxy resin potting adhesive for semiconductor packaging, the preparation method comprising the following steps:

[0047] (1) Preparation of component A: mix the epoxy resin and modified filler A at room temperature with stirring at a speed of 100 rpm for 5 min, and seal for storage;

[0048] (2) Preparation of component B: mix the curing agent, accelerator and filler B at room temperature with stirring at a speed of 500 rpm for 5 min, and seal for storage.

[0049] A use method of a high-temperature-resistant epoxy resin potting adhesive for semiconductor packaging, the use method comprising the following steps:

[0050] Mix component A and component B at room temperature with stirring at a speed of 200 rpm for 5 min, vacuum degassing for 5 min, potting, and finally curing at 120°C for 2h.

[0051] Example 2

[0052] A high-temperature-resistant epoxy resin potting adhesive for semiconductor packaging, the high-temperature-resistant epoxy resin potting adhesive comprising 100 parts by weight of component A and 35 parts by weight of component B; the component A is mixed from an epoxy resin and modified filler A; the component B is mixed from a curing agent, an accelerator and a filler B.

[0053] The mass ratio of the epoxy resin to the modified filler A is 100:35; the mass ratio of the curing agent, the accelerator and the filler B is 100:1:10.

[0054] The modified filler A is prepared by the following steps:

[0055] Step A: To 20 parts by weight of 1,1,3,3-tetramethyldisiloxane, 6 parts by weight of a first platinum catalyst is added, then 5 parts by weight of allyl glycidyl ether is added dropwise under nitrogen atmosphere at 65°C while stirring, after the dropwise addition is completed, constant temperature stirring is continued for 8h, the residue is filtered off, and distilled to obtain a first component;

[0056] Step B: To 80 parts by weight of tetrahydrofuran, 2 parts by weight of double bond modified silica, 3 parts by weight of the first component and 0.2 parts by weight of the second platinum catalyst are added, then stirred at 70°C for 10h under nitrogen atmosphere, filtered, the filtrate is removed, washed with toluene, and finally dried under vacuum at 80°C until constant weight to obtain the second component;

[0057] Step C: To 80 parts by weight of dimethyl sulfoxide, 4 parts by weight of p- phenylenediamine are added, then stirred at 70°C for 1h, incubated, followed by the addition of 3 parts by weight of the second component, continue to stir for 10h, filtered, the filtrate is removed, washed with deionized water, and finally dried under vacuum at 80°C until constant weight to obtain the third component;

[0058] Step D: To 80 parts by weight of dimethyl sulfoxide, 6 parts by weight of pentaerythritol glycidyl ether are added, then stirred at room temperature for 10min, followed by the addition of 3 parts by weight of the third component, stirred at 75°C for 10h, filtered, the filtrate is removed, washed with toluene, and finally dried under vacuum at 70°C until constant weight.

[0059] The rate of the dropwise addition in Step A is controlled at 2 drops / s.

[0060] The distillation in Step A refers to distillation at 71°C for 2h to remove volatile matter.

[0061] The double bond modified silica in Step B is prepared by the following steps:

[0062] To 80 parts by weight of anhydrous ethanol, 2 parts by weight of silica, 1.5 parts by weight of vinyltrimethoxysilane and 0.3 parts by weight of deionized water are added, then stirred at 70°C for 12h, filtered, the filtrate is removed, washed with deionized water, and finally dried under vacuum at 70°C until constant weight.

[0063] The curing agent is methylhexahydrophthalic anhydride.

[0064] The accelerator is DMP-30 accelerator.

[0065] The filler B is silica.

[0066] A preparation method of a high-temperature-resistant epoxy resin potting adhesive for semiconductor packaging, the preparation method comprising the following steps:

[0067] (1) Preparation of Component A: The epoxy resin and modified filler A are mixed by stirring at room temperature at a speed of 400 rpm for 10 min, and stored in a sealed container;

[0068] (2) Preparation of B component: mix the curing agent, accelerator and filler B at room temperature under stirring at a speed of 500 rpm for 10 min, and seal and store.

[0069] A method for using a high-temperature-resistant epoxy resin potting adhesive for semiconductor packaging, the method comprising the following steps:

[0070] Mixing A component and B component at room temperature under stirring at a speed of 400 rpm for 5 min, vacuum degassing for 5 min, potting, and finally curing at 125℃ for 2h.

[0071] Example 3

[0072] A high-temperature-resistant epoxy resin potting adhesive for semiconductor packaging, the high-temperature-resistant epoxy resin potting adhesive comprising 100 parts by weight of A component and 32 parts by weight of B component; the A component is mixed by an epoxy resin and a modified filler A; the B component is mixed by a curing agent, an accelerator and a filler B.

[0073] The mass ratio of the epoxy resin and the modified filler A is 100:33; the mass ratio of the curing agent, the accelerator and the filler B is 100:0.8:10.

[0074] The modified filler A is prepared by the following steps:

[0075] Step A: add 6 parts by weight of a first platinum catalyst to 19 parts by weight of 1,1,3,3-tetramethyldisiloxane, then add 5 parts by weight of allyl glycidyl ether dropwise under stirring at 63℃ in a nitrogen atmosphere, continue constant temperature stirring for 7h after dropwise addition is completed, filter, remove the filter residue, distill, and obtain a first component;

[0076] Step B: add 2 parts by weight of double bond modified silica, 2.5 parts by weight of the first component and 0.2 parts by weight of a second platinum catalyst to 80 parts by weight of tetrahydrofuran, then stir at 65℃ for 9h in a nitrogen atmosphere, filter, remove the filtrate, wash with toluene, and finally vacuum dry at 70℃ until constant weight to obtain a second component;

[0077] Step C: add 4 parts by weight of p-phenylenediamine to 80 parts by weight of dimethyl sulfoxide, then stir at 65℃ for 1h, keep warm, then add 2.5 parts by weight of the second component, continue stirring for 9h, filter, remove the filtrate, wash with deionized water, and finally vacuum dry at 70℃ until constant weight to obtain a third component;

[0078] Step D: To 80 parts by weight of dimethylsulfoxide was added 6 parts by weight of pentaerythritol glycidyl ether, then mixed by stirring at room temperature for 8 min, followed by the addition of 2.5 parts by weight of the third component, stirring at 73°C for 9 h, filtration, removal of the filtrate, washing with toluene, and finally drying under vacuum at 60°C to constant weight.

[0079] The rate of the dropwise addition in Step A was controlled at 1.5 drops / s.

[0080] The distillation in Step A refers to distilling at 71°C for 2 h to remove volatiles.

[0081] The double-bond modified silica in Step B was prepared by the following steps:

[0082] To 80 parts by weight of anhydrous ethanol was added 2 parts by weight of silica, 1.3 parts by weight of vinyltrimethoxysilane, and 0.2 parts by weight of deionized water, then mixed by stirring at 70°C for 12 h, filtration, removal of the filtrate, washing with deionized water, and finally drying under vacuum at 70°C to constant weight.

[0083] The curing agent was methylhexahydrophthalic anhydride.

[0084] The accelerator was DMP-30 accelerator.

[0085] The filler B was silica.

[0086] A preparation method of a high-temperature-resistant epoxy resin potting adhesive for semiconductor packaging, the preparation method comprising the following steps:

[0087] (1) Preparation of Component A: mixing the epoxy resin and modified filler A by stirring at room temperature at a speed of 200 rpm for 8 min, and storing in a sealed state;

[0088] (2) Preparation of Component B: mixing the curing agent, accelerator, and filler B by stirring at room temperature at a speed of 500 rpm for 8 min, and storing in a sealed state.

[0089] A use method of a high-temperature-resistant epoxy resin potting adhesive for semiconductor packaging, the use method comprising the following steps:

[0090] Mixing Component A and Component B by stirring at room temperature at a speed of 300 rpm for 5 min, vacuum degassing for 5 min, potting, and finally curing at 123°C for 2 h.

[0091] Comparative Example 1

[0092] On the basis of Example 3, pentaerythritol glycidyl ether in Step D was replaced by an equal weight of trimethylolpropane triglycidyl ether, and the rest remained unchanged.

[0093] Comparative Example 2

[0094] On the basis of Example 3, p-phenylenediamine in Step C is replaced by equal weight of ethylenediamine, and the rest remains unchanged.

[0095] Comparative Example 3

[0096] On the basis of Example 3, Step A is not performed, Step B is replaced by adding 2 parts by weight of silica and 1.3 parts by weight of 3-glycidyloxypropyltrimethoxysilane into 80 parts by weight of toluene, then stirring at 70°C for 12 h, filtering, removing the filtrate, washing with acetone, and finally drying under vacuum at 70°C until constant weight to obtain the second component; and the rest remains unchanged.

[0097] Comparative Example 4

[0098] On the basis of Example 3, Step C and Step D are not performed, and the rest remains unchanged.

[0099] Comparative Example 5

[0100] On the basis of Example 3, modified filler A is replaced by equal weight of silica, and the rest remains unchanged.

[0101] Test Example 1

[0102] High temperature resistance test:

[0103] The high temperature resistant epoxy resin potting adhesives prepared in Example 3 and Comparative Examples 1-5 are respectively made into samples (A component and B component are mixed by stirring at room temperature at a speed of 400 rpm for 5 min, vacuum degassing for 5 min, and finally curing at 125°C for 2 h to obtain the samples);

[0104] The Tg temperature of the above samples is tested by differential thermal analyzer (nitrogen atmosphere throughout, first heating to 250°C at a rate of 30°C / min, constant temperature for 5 min, then cooling to 30°C at a rate of 10°C / min, and finally heating to 250°C at a rate of 10°C / min, testing during the second heating, rounding to the nearest integer);

[0105] The Td temperature of the above samples is tested by thermal gravimetric analyzer (nitrogen atmosphere throughout, the heating rate is controlled at 5°C / min, and when the mass loss reaches 5%, the temperature at this time is recorded as the Td temperature, rounding to the nearest integer).

[0106] Table 1. High temperature resistance test results

[0107] Tg temperature / °C Td temperature / °C Example 3 213 430 Comparative Example 1 202 423 Comparative Example 2 160 425 Comparative Example 3 214 413 Comparative Example 4 137 416 Comparative Example 5 141 403

[0108] Comparing Example 3 and Comparative Examples 1-5, it can be seen that:

[0109] The difference between Comparative Example 1 and Example 3 is that pentaerythritol glycidyl ether is replaced by equal weight of trimethylolpropane triglycidyl ether, i.e. the chemical crosslinking points are less, and the crosslinking density is reduced.

[0110] The difference between Comparative Example 2 and Example 3 is that p-phenylenediamine is replaced by equal weight of ethylenediamine, i.e. no benzene ring structure is constructed, and no space constraint is played.

[0111] The difference between Comparative Example 3 and Example 3 is that no Si-O-Si segment is introduced.

[0112] The difference between Comparative Example 4 and Example 3 is that Step C and Step D are not performed.

[0113] The difference between Comparative Example 5 and Example 3 is that modified filler A is replaced by equal weight of silicon dioxide.

[0114] From Test Example 1, the comparison between Example 3 and Comparative Examples 1-5 shows that the high-temperature resistant epoxy resin potting adhesive prepared by the present application has high Tg temperature and Td temperature, and has very excellent high-temperature resistance; although the Tg temperature of Comparative Example 3 is slightly higher than that of the present application, it is not significant, which shows that the influence of the presence or absence of Si-O-Si segment on the Tg temperature is very small.

[0115] The above is only a preferred embodiment of the present application, and does not limit the present application in any form. Although the present application has been disclosed as above with a preferred embodiment, it is not intended to limit the present application. Any person skilled in the art can make some changes or modifications to the above disclosed technical content to obtain equivalent embodiments with equivalent changes, without departing from the technical solution of the present application. Any modification, equivalent change and modification of the above embodiments according to the technical essence of the present application, which does not depart from the technical solution of the present application, still belongs to the scope of the technical solution of the present application.

Claims

1. A high temperature resistant epoxy resin potting compound for semiconductor package, characterized in that: The high-temperature-resistant epoxy resin pouring sealant comprises 100 parts by weight of component A and 30-35 parts by weight of component B; the component A is prepared by mixing an epoxy resin and modified filler A; the component B is prepared by mixing a curing agent, an accelerator and filler B; ​ The modified filler A is prepared by the following steps: Step A: 18-20 parts by weight of 1,1,3,3-tetramethyldisiloxane is added with 6 parts by weight of a first platinum catalyst, then 5 parts by weight of allyl glycidyl ether is added dropwise under stirring at 60-65°C in a nitrogen atmosphere, after the dropwise addition is completed, constant temperature stirring is continued for 6-8h, filtration is performed to remove the filter residue, distillation is performed to remove the volatile matter, and a first component is obtained; Step B: 80 parts by weight of tetrahydrofuran is added with 2 parts by weight of double bond modified silica, 2-3 parts by weight of the first component and 0.2 parts by weight of a second platinum catalyst, then stirring is performed at 60-70°C for 8-10h in a nitrogen atmosphere, filtration is performed to remove the filtrate, washing is performed with toluene, and finally vacuum drying is performed at 60-80°C until the weight is constant to obtain a second component; Step C: 80 parts by weight of dimethyl sulfoxide is added with 4 parts by weight of p-phenylenediamine, then stirring is performed at 60-70°C for 1h, incubation is performed, then 2-3 parts by weight of the second component is added, stirring is continued for 8-10h, filtration is performed to remove the filtrate, washing is performed with deionized water, and finally vacuum drying is performed at 60-80°C until the weight is constant to obtain a third component; Step D: 80 parts by weight of dimethyl sulfoxide is added with 6 parts by weight of pentaerythritol glycidyl ether, then mixing is performed under stirring at room temperature for 5-10min, then 2-3 parts by weight of the third component is added, stirring is performed at 70-75°C for 8-10h, filtration is performed to remove the filtrate, washing is performed with toluene, and finally vacuum drying is performed at 50-70°C until the weight is constant to complete the preparation; The double bond modified silica in step B is prepared by the following steps: 80 parts by weight of anhydrous ethanol is added with 2 parts by weight of silica, 1-1.5 parts by weight of vinyltrimethoxysilane and 0.1-0.3 parts by weight of deionized water, then stirring is performed at 70°C for 12h, filtration is performed to remove the filtrate, washing is performed with deionized water, and finally vacuum drying is performed at 70°C until the weight is constant to complete the preparation.

2. The high temperature resistant epoxy potting adhesive for semiconductor package according to claim 1, characterized in that: The mass ratio of the epoxy resin to the modified filler A is 100:30-35; the mass ratio of the curing agent, the accelerator and the filler B is 100:0.5-1:

10.

3. The high temperature resistant epoxy potting adhesive for semiconductor package according to claim 1, characterized in that: The dropwise addition rate in step A is controlled at 1-2 drops / s.

4. The high temperature resistant epoxy potting adhesive for semiconductor package according to claim 1, characterized in that: The distillation in step A refers to distillation at 71°C for 2h to remove the volatile matter.

5. The high temperature resistant epoxy potting adhesive for semiconductor package according to claim 1, characterized in that: The curing agent is methylhexahydrophthalic anhydride.

6. The high temperature resistant epoxy potting adhesive for semiconductor package according to claim 1, characterized in that: The accelerator is DMP-30 accelerator.

7. The high temperature resistant epoxy potting adhesive for semiconductor package according to claim 1, characterized in that: The filler B is silica or boron nitride.