Manufacturing method of anti-fingerprint film and metal piece with anti-fingerprint film

Abstract

The invention discloses a manufacturing method of an anti-fingerprint film and a metal piece with the anti-fingerprint film. The manufacturing method of the anti-fingerprint film comprises the following steps: providing a metal substrate; a transition layer is formed on the surface of the metal base material, and part of the surface of the metal base material is exposed out of the transition layer; the surface, exposed out of the transition layer, of the metal base material is oxidized, so that an oxide layer is formed on the surface, exposed out of the transition layer, of the metal base material; and forming an anti-fingerprint film layer on the transition layer and the oxide layer. The surface, exposed out of the transition layer, of the metal base material is oxidized, the oxidation layer is formed on the surface, exposed out of the transition layer, of the metal base material, the binding force between the surface, not covered with the transition layer, of the metal base material and the anti-fingerprint film layer is enhanced, and therefore the durability of the anti-fingerprint film layer is improved.

Description

Technical Field

[0001] The present application relates to the field of film coating technology, and in particular to a method for manufacturing an anti-fingerprint film and a metal part having the anti-fingerprint film. Background Art

[0002] In recent years, with the rapid development of the electronic information industry, consumers are using 3C products more and more frequently, and the demand for surfaces with anti-fingerprint and anti-fouling functions for 3C products is also increasing. Anti-fingerprint film is a film layer with low surface energy. Most substances cannot spread on its surface, cannot adhere to the surface of the substrate or are easily removed from the surface of the substrate, so it has excellent anti-fingerprint and anti-fouling properties. At present, anti-fingerprint film has been widely used on the surfaces of 3C product shells, screens and other components.

[0003] Anti-fingerprint films are usually prepared by vacuum evaporation coating. Due to the low atomic energy of vacuum evaporation coating, the bonding force between the formed film layer and the substrate is weak, and the durability of the film layer is poor. Summary of the invention

[0004] In view of this, the present application provides a method for manufacturing an anti-fingerprint film and a metal part having the anti-fingerprint film, which can solve the above technical problems.

[0005] The first aspect of the present application provides a method for manufacturing an anti-fingerprint film, comprising: Providing a metal substrate; forming a transition layer on the surface of the metal substrate, wherein a portion of the surface of the metal substrate is exposed from the transition layer; Oxidizing the surface of the metal substrate exposed from the transition layer so that an oxide layer is formed on the surface of the metal substrate exposed from the transition layer; An anti-fingerprint film layer is formed on the transition layer and the oxide layer.

[0006] In some embodiments, the step of "forming a transition layer on the surface of the metal substrate" includes: introducing oxygen into a magnetron sputtering coating device, wherein the oxygen oxidizes silicon atoms sputtered from a silicon target and forms a transition layer on the surface of the metal substrate.

[0007] In some embodiments, the step of "oxidizing the surface of the metal substrate exposed from the transition layer to form an oxide layer on the surface of the metal substrate exposed from the transition layer" includes: after forming the transition layer, introducing oxygen gas, and using inductively coupled plasma to further oxidize the surface of the metal substrate exposed from the transition layer in oxygen atomic plasma, thereby forming the oxide film on the surface of the metal substrate exposed from the transition layer.

[0008] In some embodiments, the time of introducing oxygen is 10s-80s, the flow rate of the oxygen is 100sccm-200sccm, and the power of the inductively coupled plasma (ICP) is 1kw-5kw. In some embodiments, the sputtering power of the silicon target is 4 kW to 8 kW, the flow rate of the oxygen is 100 sccm to 200 sccm, and the time is 50 s to 150 s.

[0009] In some embodiments, the step of "forming a transition layer on the surface of the metal substrate" further includes cleaning the surface of the metal substrate.

[0010] In some embodiments, an anti-fingerprint film layer is formed on the surfaces of the transition layer and the oxide layer facing away from the metal substrate by means of evaporation coating.

[0011] In some embodiments, the material of the evaporated coating is an organic substance containing a fluorocarbon group, the temperature of the evaporated coating is 350° C. to 500° C., and the time of the evaporated coating is 200 s to 500 s.

[0012] The second aspect of the present application also provides a metal part with an anti-fingerprint film, including a metal substrate, a transition layer, an oxide layer and an anti-fingerprint film layer, the surface of the metal substrate has a transition layer, a portion of the surface of the metal substrate is exposed from the transition layer, the surface of the metal substrate exposed from the transition layer has an oxide layer, and the surfaces of the transition layer and the oxide layer facing away from the metal substrate are provided with an anti-fingerprint film layer.

[0013] In some embodiments, the material of the transition layer includes silicon dioxide, the material of the oxide layer includes metal oxide, and the material of the anti-fingerprint film layer includes organic matter containing fluorocarbon groups.

[0014] The present application oxidizes the surface of the metal substrate exposed from the transition layer, so that an oxide layer is formed on the surface of the metal substrate exposed from the transition layer, thereby enhancing the bonding strength between the surface of the metal substrate not covered by the transition layer and the anti-fingerprint film layer, thereby improving the durability of the anti-fingerprint film layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a schematic diagram of the principle of combining the anti-fingerprint film layer provided in this application with the metal substrate, transition layer and oxide layer.

[0016] Main component symbols The following specific implementation methods will further illustrate the present application in conjunction with the above-mentioned drawings. DETAILED DESCRIPTION

[0017] The embodiments of the present application are described in detail below. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application. The reagents and materials described in the following embodiments can all be obtained from commercial sources.

[0018] In order to more clearly understand the above-mentioned purposes, features and advantages of the embodiments of the present invention, the present invention is described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the features in the embodiments of the present application can be combined with each other without conflict.

[0019] In the following description, many specific details are set forth to facilitate a full understanding of the embodiments of the present invention. The described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the embodiments of the present invention.

[0020] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the technical field of the embodiments of the present invention. The terms used in the specification of the present invention herein are only for the purpose of describing specific implementation methods and are not intended to limit the embodiments of the present invention.

[0021] The method to improve the binding force of the anti-fingerprint film is usually to use SiO2 as a transition layer between the substrate and the anti-fingerprint film, and chemically connect the substrate and the anti-fingerprint film through -O-Si-O- bonds to improve the binding force of the film layer and enhance the durability of the film layer. However, the problem with this method is that SiO2 cannot completely cover the surface of the substrate, resulting in part of the anti-fingerprint film layer being directly connected to the surface of the substrate, but the binding force between the anti-fingerprint film and the substrate surface is weak, which leads to the poor durability of the anti-fingerprint film formed in this way.

[0022] See also Figure 1 The present application provides a method for manufacturing an anti-fingerprint film, comprising: Providing a metal substrate 1; A transition layer 2 is formed on the surface of the metal substrate 1, and a portion of the surface of the metal substrate 1 is exposed from the transition layer 2; Oxidizing the surface of the metal substrate 1 exposed from the transition layer 2, so that an oxide layer 3 is formed on the surface of the metal substrate 1 exposed from the transition layer 2; An anti-fingerprint film layer 4 is formed on the transition layer 2 and the oxide layer 3 .

[0023] In some embodiments, the material of the metal substrate 1 may be at least one of titanium, aluminum, chromium, or nitrides and carbonitrides of titanium, aluminum, and chromium. The surface of the metal substrate 1 may be a non-smooth surface, such as a surface with roughness such as brushing or sandblasting. When forming the transition layer 2, the surface of the metal substrate 1 is not smooth, so that a complete transition layer 2 cannot be formed on the surface of the metal substrate 1, that is, part of the surface of the metal substrate 1 is exposed from the transition layer 2. If the anti-fingerprint film layer 4 is then directly formed, part of the anti-fingerprint film layer 4 cannot be connected to the metal substrate 1 through the transition layer 2, thereby reducing the bonding force between the anti-fingerprint film layer 4 and the metal substrate 1, and the durability of the anti-fingerprint film layer 4 is deteriorated.

[0024] In some embodiments, forming the transition layer 2 on the surface of the metal substrate 1 includes: introducing oxygen into a magnetron sputtering coating device, the oxygen oxidizes the silicon atoms sputtered from the silicon target and forms the transition layer 2 on the surface of the metal substrate 1. That is, the transition layer 2 is mainly composed of silicon dioxide.

[0025] In some embodiments, the sputtering power of the silicon target is 4 kW to 8 kW. For example, the sputtering power of the silicon target can be 4 kW, 5 kW, 6 kW, 7 kW, 8 kW, or any value within the range formed by any two of the above values. The sputtering power of the silicon target within the above range can effectively sputter out silicon atoms in the silicon target.

[0026] In some embodiments, during the process of introducing oxygen, the flow rate of the inert gas argon is 100 sccm to 400 sccm, the flow rate of oxygen is 100 sccm to 200 sccm, and the time is 50 s to 150 s. For example, the flow rate of oxygen can be 100 sccm, 120 sccm, 140 sccm, 160 sccm, 180 sccm, 200 sccm, or any value within the range formed by any two of the above values, and the time for introducing oxygen is 50 s, 80 s, 100 s, 120 s, 150 s, or any value within the range formed by any two of the above values. When the flow rate and time of introducing oxygen are within the above range, the degree of oxidation of the silicon atoms sputtered from the silicon target can be increased, and the probability of the silicon atoms not being oxidized can be reduced, so that a good transition layer 2 can be formed on the surface of the metal substrate 1, and the surface adhesion of the transition layer 2 on the metal substrate 1 can be improved, thereby improving the bonding force between the metal substrate 1 and the anti-fingerprint film layer 4, that is, the durability of the anti-fingerprint film layer 4 can be improved.

[0027] In some embodiments, oxidizing the surface of the metal substrate 1 exposed from the transition layer 2 so that an oxide layer 3 is formed on the surface of the metal substrate 1 exposed from the transition layer 2 includes: after the transition layer 2 is formed, oxygen is continuously introduced, and the surface of the metal substrate 1 exposed from the transition layer 2 is further oxidized in oxygen atomic plasma by inductively coupled plasma, so that an oxide film is formed on the surface of the metal substrate 1 exposed from the transition layer 2. Inductively coupled plasma technology can convert oxygen into oxygen plasma, which contains highly active oxygen ions. The highly active oxygen ions react with the surface of the metal substrate 1 not covered by the transition layer 2 to form a metal oxide (MeO) layer, i.e., an oxide layer 3. The MeO in the oxide layer 3 bonds with the carbon atoms in the subsequent anti-fingerprint film layer 4 to form a Me-OC bond, so as to increase the bonding force between the anti-fingerprint film layer 4 and the metal substrate 1 and improve the durability of the anti-fingerprint film layer 4.

[0028] In some embodiments, during the process of continuing to introduce oxygen, the time is 10s to 80s, the flow rate of the inert gas argon is 100sccm to 400sccm, the flow rate of oxygen is 100sccm to 200sccm, and the power of the inductively coupled plasma is 1kw to 5kw. For example, the time of introducing oxygen can be 10s, 20s, 30s, 40s, 50s, 60s, 70s, 80s, or any value within the range formed by any two of the above values; the flow rate of oxygen can be 100sccm, 120sccm, 140sccm, 160sccm, 180sccm, 200sccm, or any value within the range formed by any two of the above values; the power of the inductively coupled plasma can be 1kw, 2kw, 3kw, 4kw, 5kw, or any value within the range formed by any two of the above values. When the time for introducing oxygen, the flow rate of oxygen and the power of the inductively coupled plasma are within the above range, on the one hand, the silicon atoms sputtered from the silicon target can be fully oxidized to increase the number of Si-O bonds, that is, to increase the content of the transition layer 2 on the surface of the metal substrate 1; on the other hand, the area on the surface of the metal substrate 1 not covered by the transition layer 2 is oxidized to form -O- bonds, thereby improving the bonding force between the anti-fingerprint film layer 4 and the metal substrate 1.

[0029] In some embodiments, the step of "forming a transition layer 2 on the surface of the metal substrate 1" further includes cleaning the surface of the metal substrate 1. Cleaning the surface of the metal substrate 1 before forming the transition layer 2 can remove dirt on the surface of the metal substrate 1 and improve the cleanliness of the surface of the metal substrate 1, thereby improving the bonding force of the transition layer 2 or the subsequent oxide layer 3 on the surface of the metal substrate 1.

[0030] In some embodiments, the method of "cleaning the surface of the metal substrate 1" can be plasma cleaning, and the power of the inductively coupled plasma during cleaning is 1 kw~5 kw, the gas flow rate of the inert gas argon is 100 sscm~400 sscm, and the cleaning time is 10s~80s. When the power of the inductively coupled plasma, the gas flow rate of the argon gas, and the cleaning time during cleaning are within the above ranges, it is beneficial to fully clean the surface of the metal substrate 1 without damaging the surface of the metal substrate 1.

[0031] In some embodiments, the anti-fingerprint film layer 4 is formed on the surfaces of the transition layer 2 and the oxide layer 3 facing away from the metal substrate 1 by means of evaporation coating.

[0032] In some embodiments, the material of the evaporation coating is an organic substance containing a fluorocarbon group, the temperature of the evaporation coating is 350°C to 500°C, and the time of the evaporation coating is 200s to 500s. For example, the temperature of the evaporation coating can be 350°C, 400°C, 450°C, 500°C, or any value within the range formed by any two of the above values, and the time of the evaporation coating can be 200s, 250s, 300s, 350s, 400s, 450s, 500s, or any value within the range formed by any two of the above values. When the temperature and time of the evaporation coating are within the above range, the effective preparation of the anti-fingerprint film layer 4 can be achieved, and the transition layer 2 and the oxide layer 3 can be fully combined with the anti-fingerprint film layer 4.

[0033] The main component of the anti-fingerprint film layer 4 is an organic substance containing FC bonds, and the main component of the transition layer 2 is SiO2. In the prior art, the transition layer 2 cannot completely cover the surface of the metal substrate 1. In addition to being partially connected to the transition layer 2, the anti-fingerprint film layer 4 is directly connected to the surface of the metal substrate 1 where there is no transition layer 2 on the surface of the metal substrate 1. At this time, the organic substance containing FC bonds in the anti-fingerprint film layer 4 is connected to the metal atom (Me) in the metal substrate 1 with a weak bond C-Me, resulting in poor bonding of the anti-fingerprint film layer 4 to the surface of the metal substrate 1. The present application further forms an oxide layer 3 on the surface of the metal substrate 1 exposed to the transition layer 2, so that the surface of the metal substrate 1 not covered by the transition layer 2 is covered with an oxide film. At this time, where there is no transition layer 2 on the surface of the metal substrate 1, the organic substance containing FC bonds in the anti-fingerprint film layer 4 is connected to the metal substrate 1 with a CO-Me bond. The bond energy of the CO-Me bond is stronger than that of the C-Me bond, so the bonding force between the anti-fingerprint film layer 4 and the metal substrate 1 is enhanced, further improving the durability of the anti-fingerprint film layer 4 on the metal substrate 1.

[0034] In addition, the method of forming the SiO2 transition layer 2 in the prior art is: introducing reaction gas O2 into the vacuum chamber to oxidize the silicon target, and then sputtering out the SiO2 formed by the oxidation of the silicon target surface, depositing it on the substrate surface, and forming the SiO2 transition layer 2 on the substrate surface. However, this method will cause the oxidation degree of the silicon target surface to change due to factors such as the use state of the silicon target and the stability of the equipment, thereby resulting in differences in the composition structure of the SiO2 transition layer 2 prepared in different furnaces or different production times. For example, in the ideal SiO2 transition layer 2, the network structure is interconnected in the manner shown in the following structure L-1, but due to the influence of the use state of the silicon target or the stability of the equipment, the oxidation degree of the silicon target surface is inconsistent, resulting in the existence of Si-dangling bonds (as shown in structure L-2), Si-Si weak bonds (as shown in structure L-3), and Si-O weak bonds (as shown in structure L-4) in the structure of the sputtered SiO2 transition layer 2, resulting in the instability of the composition structure of the SiO2 transition layer 2, thereby reducing the bonding force between the anti-fingerprint film and the substrate surface.

[0035] Structure L-1 Structure L-2 Structure L-3 Structure L-4 The manufacturing method provided in the present application can fully oxidize the Si film layer sputtered by the silicon target into SiO2 during the process of forming the oxide layer 3, so that the composition structure of the SiO2 transition layer 2 is stable and is not affected by factors such as the use status or equipment of the silicon target.

[0036] The method for making the anti-fingerprint film provided in this application can be applied to products in multiple fields, such as watches, mobile phones, notebook computers, and bathroom products, to improve the durability of the anti-fingerprint film on these products. Especially in the case of an uneven substrate surface, such as a product surface that is sandblasted or brushed, the binding force of the anti-fingerprint film prepared by conventional methods on the uneven surface is inherently poorer than that on the flat surface, and the method provided in this application can more significantly improve the binding force of the anti-fingerprint film layer 4 on the substrate surface, so the effect of improving the binding force of the anti-fingerprint film layer 4 is more significant.

[0037] The second aspect of the present application also provides a metal part with an anti-fingerprint film, including a metal substrate 1, a transition layer 2, an oxide layer 3 and an anti-fingerprint film layer 4, the surface of the metal substrate 1 has a transition layer 2, a portion of the surface of the metal substrate 1 is exposed from the transition layer 2, the surface of the metal substrate 1 exposed from the transition layer 2 has an oxide layer 3, and the surfaces of the transition layer 2 and the oxide layer 3 facing away from the metal substrate 1 are provided with an anti-fingerprint film layer 4.

[0038] The present application is described in detail below through specific embodiments.

[0039] Example 1 S1: providing a titanium carbide nitride substrate having a sandblasted surface, and placing the substrate in a magnetron sputtering coating device; S2: Evacuate the magnetron sputtering equipment to 5x10 -3 Pa, start the plasma cleaning program, use inductively coupled plasma to clean the surface of the titanium nitride carbide substrate, argon gas is introduced during the process, the gas flow rate of argon gas is 350 sccm, the cleaning time is 30 s, and the power of the inductively coupled plasma is 1.5 kW; S3: Start the silicon target, the power of the silicon target is 4 kW, keep the power of the inductively coupled plasma and the gas flow rate of argon unchanged, and introduce the reaction gas O2, the gas flow rate of O2 is 180 sccm, the power of the inductively coupled plasma is still 1.5 kW, and the time of this process is 60 s to form a SiO2 transition layer on the surface of the titanium nitride carbide substrate. At this time, the surface of a part of the titanium nitride carbide substrate is not covered by the SiO2 transition layer, that is, the surface of a part of the titanium nitride carbide substrate is exposed from the SiO2 transition layer; S4: Keep the power of the inductively coupled plasma unchanged, continue to introduce argon and O2, and the gas flow rate of argon is 350 sccm, the gas flow rate of O2 is 180 sccm, and the duration is 40 s. This process allows the surface of the titanium nitride carbide substrate exposed from the SiO2 transition layer to be further oxidized in the oxygen atomic plasma to generate -O- bonds and form an oxide layer. At the same time, the silicon atoms sputtered from the silicon target fully generate Si-O bonds; S5: The titanium carbide nitride substrate is transferred from the magnetron sputtering coating device to the evaporation coating device. The evaporation coating material is perfluoropolyether. The evaporation coating temperature is 480° C. and the time is 400 s, so as to coat an anti-fingerprint film layer on the surface of the titanium carbide nitride substrate.

[0040] The differences between Example 2 to Example 6 and Example 1 are detailed in Table 1, and the rest are the same as Example 1.

[0041] Table 1 Comparative Example 1 The difference between Comparative Example 1 and Example 1 is that there is no step S4, and the rest is the same as Example 1.

[0042] <Performance Test> (1) Stability: The color of the anti-fingerprint film layer prepared in Example 1 and Comparative Example 1 was detected using a KONICA MINOLTA CM-3700A spectrophotometer, and then the titanium nitride carbide substrate with the anti-fingerprint film layer prepared in Example 1 and Comparative Example 1 was further subjected to gas-proofing, degumming and cleaning, laser de-overlaying, laser dust cleaning, shaping and assembly, including two etching liquid cleaning stations, and the color of the anti-fingerprint film layer was detected again, and the color difference before and after was calculated. If the color stability of the anti-fingerprint film layer is good, it can be said that it has good stability.

[0043] The color difference of Example 1 is obtained as follows: DL=0.49, Da*=-0.05, Db*=-0.31; The color difference of comparative example 1 is obtained as follows: DL=0.85, Da*=-0.1, Db*=-0.56.

[0044] It can be seen that the color difference of the anti-fingerprint film layer prepared in Example 1 is smaller than that of the comparative example, which indicates that the anti-fingerprint film layer prepared in Example 1 has good color stability and good stability of the film layer.

[0045] (2) Water drop angle test The water drop angle of the anti-fingerprint film layer was tested after friction test, temperature and humidity cycle test, 24h seawater immersion test and 100h UV irradiation test. The test point of the water drop angle was the center point of the substrate.

[0046] Among them, friction test: a 10mmx10mm rubber head is covered with a dust-free cloth and rubbed back and forth on the surface of the anti-fingerprint film layer for 6000 times under a load of 1kg to test the water drop angle of the anti-fingerprint film layer.

[0047] Temperature and humidity cycle test: With the temperature rising from 30℃ to 60℃ and the humidity rising from 40% to 90% as one cycle, the substrate with anti-fingerprint film is placed in an environment with a temperature of 30℃~60℃ and a humidity of 40%~90% for 24 hours and cycled 10 times. Then the substrate is taken out and the water drop angle of the anti-fingerprint film is tested.

[0048] 24h seawater immersion test: After the substrate with the anti-fingerprint film is immersed in seawater for 24 hours, the water drop angle of the anti-fingerprint film is tested.

[0049] 100h UV irradiation test: After the substrate with the anti-fingerprint film is exposed to ultraviolet light for 100h, the water drop angle of the anti-fingerprint film is tested.

[0050] The water drop angle test results of Examples 1 to 6 and Comparative Example 1 are shown in Table 2.

[0051] Table 2 According to the data comparison of Examples 1 to 6 and Comparative Example 1 in Table 1 and Table 2, the anti-fingerprint film prepared by the method provided by the present application has good stability. And after the friction test, temperature and humidity cycle test, 24h seawater immersion test or 100h ultraviolet light irradiation test, it still has a large water drop angle, which means that the anti-fingerprint film provided by the present application has good wear resistance and extreme environment resistance, and good durability. Even after the friction test, temperature and humidity cycle test, 24h seawater immersion test or 100h ultraviolet light irradiation test, it still has a large water drop angle, has better waterproof and antifouling performance, and has a better anti-fingerprint effect.

[0052] From the comparison between Example 1 and Example 5, it can be seen that in the process of forming the transition layer, appropriate silicon target sputtering power, oxygen flow rate and appropriate preparation time are beneficial to increasing the oxidation degree of silicon atoms sputtered from the silicon target, so as to form a good transition layer on the surface of the substrate, thereby enhancing the bonding strength between the anti-fingerprint film layer and the substrate, so that the anti-fingerprint film layer exhibits excellent durability after undergoing friction test, temperature and humidity cycle test, 24h seawater immersion test or 100h ultraviolet light irradiation test, and the anti-fingerprint film layer still has a large water drop angle, that is, it still has a good anti-fingerprint effect.

[0053] From the comparison between Example 1 and Example 6, it can be seen that in the process of forming the oxide layer, the time of introducing oxygen, the flow rate of oxygen and the power of the inductively coupled plasma are appropriate, which is conducive to fully oxidizing the silicon atoms sputtered from the silicon target, increasing the number of Si-O bonds, and at the same time, oxidizing the area on the surface of the substrate not covered by the transition layer to form -O- bonds, thereby improving the bonding force between the anti-fingerprint film layer and the substrate. Therefore, after undergoing friction test, temperature and humidity cycle test, 24h seawater immersion test or 100h ultraviolet light irradiation test, it still has a large water drop angle, that is, it still has a good anti-fingerprint effect.

[0054] The above implementation modes are only used to illustrate the technical solutions of the present application and are not intended to limit the present application. Although the present application is described in detail with reference to the above implementation modes, a person skilled in the art should understand that the technical solutions of the present application may be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present application.

Claims

1. A method for producing an anti-fingerprint film, characterized in that: include: Providing a metal substrate; forming a transition layer on the surface of the metal substrate, wherein a portion of the surface of the metal substrate is exposed from the transition layer; Oxidizing the surface of the metal substrate exposed from the transition layer so that an oxide layer is formed on the surface of the metal substrate exposed from the transition layer; An anti-fingerprint film layer is formed on the transition layer and the oxide layer.

2. The method for making an anti-fingerprint film according to claim 1, characterized in that: The forming of the transition layer on the surface of the metal substrate comprises: introducing oxygen into a magnetron sputtering coating device, wherein the oxygen oxidizes silicon atoms sputtered from a silicon target and forms a transition layer on the surface of the metal substrate.

3. The method for making an anti-fingerprint film according to claim 1, characterized in that: The step of oxidizing the surface of the metal substrate exposed from the transition layer so that an oxide layer is formed on the surface of the metal substrate exposed from the transition layer comprises: After the transition layer is formed, oxygen is introduced, and the surface of the metal substrate exposed from the transition layer is further oxidized in oxygen atomic plasma by inductively coupled plasma, so that the oxide film is formed on the surface of the metal substrate exposed from the transition layer.

4. The method for making an anti-fingerprint film according to claim 3, characterized in that: The time of introducing oxygen is 10s~80s, the flow rate of the oxygen is 100sccm~200sccm, and the power of the inductively coupled plasma is 1kw~5kw.

5. The method for making an anti-fingerprint film according to claim 2, characterized in that: The sputtering power of the silicon target is 4 kW to 8 kW, the flow rate of the oxygen is 100 sccm to 200 sccm, and the time is 50 s to 150 s.

6. The method for making an anti-fingerprint film according to claim 1, characterized in that: Before the step of "forming a transition layer on the surface of the metal substrate", the step also includes cleaning the surface of the metal substrate.

7. The method for making an anti-fingerprint film according to claim 1, characterized in that: An anti-fingerprint film layer is formed on the surfaces of the transition layer and the oxide layer away from the metal substrate by means of evaporation coating.

8. The method for making an anti-fingerprint film according to claim 7, characterized in that: The material of the evaporation coating is an organic substance containing a fluorine-carbon group, the temperature of the evaporation coating is 350° C. to 500° C., and the time of the evaporation coating is 200s to 500s.

9. A metal part with an anti-fingerprint film, characterized in that: The invention comprises a metal substrate, a transition layer, an oxide layer and an anti-fingerprint film layer. The surface of the metal substrate has a transition layer, a part of the surface of the metal substrate is exposed from the transition layer, the surface of the metal substrate exposed from the transition layer has an oxide layer, and the surfaces of the transition layer and the oxide layer facing away from the metal substrate are provided with an anti-fingerprint film layer.

10. The metal part with anti-fingerprint film according to claim 9, characterized in that: The material of the transition layer includes silicon dioxide, the material of the oxide layer includes metal oxide, and the material of the anti-fingerprint film layer includes organic matter containing fluorocarbon groups.

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