Chemical vapor deposition (CVD) reaction cavity and CVD equipment

Abstract

The invention relates to the technical field of semiconductor processing, in particular to chemical vapor deposition (CVD) equipment which comprises a processing tank and an inflation pipe fixedly connected to the upper end of the processing tank, a heating layer is installed in the processing tank, a plurality of gas injection assemblies are arranged at the upper end of the heating layer and communicate with the inflation pipe at the upper end, and the gas injection assemblies are arranged in the processing tank. The gas outlet is used for discharging reaction gas; a plurality of placing assemblies are arranged in the reaction space, each placing assembly comprises a plurality of placing plates, a plurality of side frames and two sliding blocks, the plurality of placing plates are horizontally and fixedly connected among the plurality of side frames in parallel, a plurality of placing grooves are annularly formed in the placing plates, and the two sliding blocks are arranged in the placing grooves. And the two sliding blocks are symmetrically and fixedly connected to the bottom surface of the lowermost placing plate and are arranged in the sliding grooves in a sliding manner. According to the invention, the reaction gas is uniformly distributed on different layers of semiconductors, so that the non-uniform distribution of the reaction gas is avoided, and the film coating effect on the semiconductors is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and in particular to a chemical vapor deposition (CVD) reaction chamber and a CVD device. Background Art

[0002] CVD (Chemical Vapor Deposition) is a chemical reaction process that deposits materials on a solid surface through a gas phase reaction. It is one of the commonly used processes in the semiconductor industry. As an important equipment for implementing the CVD process, the CVD reaction chamber plays the role of providing a suitable reaction environment and controlling reaction parameters.

[0003] A Chinese patent with publication number CN114231952B discloses a CVD coating device, comprising: a reaction chamber: accommodating a substrate to complete the coating operation, the reaction chamber is respectively provided with a reaction gas input terminal and an inert gas input terminal, and the substrate coating process is a plasma chemical vapor deposition coating; a polishing component: arranged in the reaction chamber, the polishing component includes a polishing head that can contact with the substrate and polish the surface of the substrate by relative rotation with the substrate.

[0004] In order to improve the efficiency of coating, existing semiconductor CVD equipment places the semiconductor upside down, but the reaction gas is usually introduced from the top. The upper and lower parallel placement easily causes a large amount of reaction gas to be coated on the upper semiconductor, which will cause uneven thickness of the semiconductor coating and affect the coating effect. Summary of the invention

[0005] The purpose of the present invention is to solve the shortcomings of the prior art that the upper and lower parallel placement method easily causes a large amount of reaction gas to be coated on the upper semiconductor, resulting in uneven thickness of the semiconductor coating and affecting the coating effect, and to propose a chemical vapor deposition CVD reaction chamber and CVD equipment.

[0006] In order to achieve the above object, the present invention adopts the following technical solutions: A chemical vapor deposition (CVD) reaction chamber comprises: a heating layer, a rectangular reaction space is arranged inside the heating layer, a plurality of conduits are symmetrically arranged on both sides of the inner wall of the reaction space, and the plurality of conduits are respectively used to introduce gaseous precursors and discharge exhaust gas; Two sliding grooves are symmetrically arranged on the bottom surface of the reaction space, and a limiting groove is arranged in the middle of the two sliding grooves, and the depth of the limiting groove is greater than the depth of the sliding groove.

[0007] A chemical vapor deposition (CVD) device using the above reaction chamber comprises: a processing tank and a gas charging pipe fixedly connected to the upper end of the processing tank, the heating layer is installed inside the processing tank, a plurality of jet assemblies are arranged on the upper end of the heating layer, and the plurality of jet assemblies are connected to the gas charging pipe at the upper end for extracting the reaction gas; A plurality of placement components are arranged inside the reaction space, and the placement components include a plurality of placement plates, a plurality of side frames and two sliding blocks. The plurality of placement plates are horizontally and parallelly fixedly connected between the plurality of side frames, and a plurality of placement grooves are annularly provided on the placement plates. The two sliding blocks are symmetrically and fixedly connected to the bottom surface of the lowest placement plate and are slidably arranged inside the sliding grooves. A mounting opening is provided in the middle of the placement plate, and a plurality of mounting openings of the placement plates are provided with air guide components inside, the air guide components comprising a mounting tube, an air guide tube and an air jet end head, the mounting tube is fixedly installed inside the mounting opening, the air guide tube is elastically installed inside the mounting tube through an elastic member, and the air jet end head is fixedly connected to the bottom end of the air guide tube; The air guide end of the jet assembly moves downward, driving the air guide pipe to move downward, thereby squeezing and connecting the air guide pipes in the plurality of air guide assemblies.

[0008] Preferably, the jet assembly includes a connecting pipe, a jet head and a telescopic extrusion tube, the connecting pipe is fixedly mounted on the top wall of the reaction space, the jet head is fixedly connected to the bottom end of the connecting pipe, and the telescopic extrusion tube is fixedly connected to the bottom end of the jet head.

[0009] Preferably, a bayonet is provided on the air guide tube, and a clamping tube is provided at the bottom end of the jet end head. The bayonet, the bottom end of the telescopic extrusion tube and the clamping tube are all polygonal and are used for being clamped to each other.

[0010] Preferably, a sliding space is provided inside the installation tube, and a limiting ring is provided inside the sliding space, and the limiting rings inside the plurality of installation tubes are located at different positions, and the upper limiting rings are located closer to the bottom end of the installation tube; The elastic member is arranged inside the sliding space and above the limiting ring. The elastic member includes a fixing ring, a bottom ring and a spring tube. The fixing ring is fixedly sleeved on the air guide tube. The bottom ring and the spring tube are sleeved on the air guide tube. Both ends of the spring tube are fixedly connected to the fixing ring and the bottom ring.

[0011] Preferably, a rotating assembly is provided inside the placement plate, and the rotating assembly includes a plurality of rotating gear discs, a driving gear disc and a clamping piece. The plurality of rotating gear discs are rotatably installed inside the plurality of placement slots respectively, the driving gear disc is rotatably installed inside the mounting tube, and a driving port is opened in the middle of the driving gear disc, the driving gear disc is meshedly connected with the plurality of rotating gear discs, and is used to drive the rotating gear disc to rotate, the clamping piece is fixedly connected to the air duct, the clamping piece and the driving port are both polygonal, and the clamping piece is used to drive the driving gear disc to rotate.

[0012] Preferably, a plurality of the rotating toothed discs are provided with adsorption components, and the adsorption components are used to adsorb and fix objects placed on the rotating toothed discs.

[0013] Preferably, the adsorption assembly includes multiple suction cups, multiple connecting tubes and a folding airbag ring, the multiple suction cups are fixedly connected to the center of the rotating gear disk, the folding airbag ring is sleeved on the air guide tube, and the upper end is rotatably connected to the bottom wall of the driving gear disk, and the bottom end is rotatably connected to the fixed ring, one end of the multiple connecting tubes is rotatably installed on the bottom of the multiple rotating gear disks, connected to the inside of the suction cup, and the other end is fixedly connected to the folding airbag ring.

[0014] Preferably, two bottom grooves are symmetrically provided inside the limiting groove, the bottom groove is located directly below the jet assembly, and a rotating assembly is arranged inside the bottom groove.

[0015] Preferably, the rotating assembly includes a driving column and a rotating seat, the driving column is fixedly installed inside the bottom groove, and the rotating seat is fixedly connected to the top of the driving column and is used to rotate the lowest air guide tube.

[0016] Compared with the prior art, the present invention has the following beneficial effects: By moving the gas guide end of the jet assembly downward, multiple gas guide pipes are connected to form a complete gas guide pipe, and the jet end head is moved out of the installation tube. The multiple jet end heads are respectively located on the upper sides of multiple placement plates, and are used to evenly spray the introduced reaction gas on the placement plates, thereby ensuring that the coating speed of semiconductors of different layers is the same; when the gas guide pipe rotates, the clamp will drive the driving gear disc to rotate, and the rotating driving gear disc will drive multiple rotating gear discs to rotate at the same time, so that the semiconductor placed on the rotating gear disc rotates, so that the ejected reaction gas is evenly distributed on the surface of the semiconductor, so that the coating is evenly covered on the surface of the semiconductor; when the reaction gas is introduced Afterwards, as the air duct moves downward, the folding airbag ring fixed between the fixing ring and the limiting ring is stretched and expanded, and the folding airbag ring evacuates air from multiple connecting tube positions, thereby extracting the gas between the suction cup and the semiconductor, forming a negative pressure, adsorbing the semiconductor on the suction cup, and strengthening the fixation of the semiconductor; when the coating is completed and the multiple air ducts are separated, the folding airbag ring squeezes out the air, thereby separating the suction cup and the semiconductor again, facilitating the transfer of the semiconductor; the polygonal clamping tube and the clamping port can ensure the fixation of the upper and lower multiple air ducts, and at the same time ensure that the pipeline formed by the multiple air ducts can rotate synchronously, so that the jet ends at different upper and lower positions rotate at the same speed. Description of the drawings Figure 1 A schematic diagram of the front structure of a chemical vapor deposition (CVD) device proposed by the present invention; Figure 2 A schematic diagram of the internal structure of a chemical vapor deposition (CVD) device proposed by the present invention; Figure 3 A schematic diagram of the reaction space structure of a chemical vapor deposition (CVD) device proposed by the present invention; Figure 4A schematic diagram of the structure of the placement components of a chemical vapor deposition (CVD) device proposed by the present invention; Figure 5 A schematic diagram of the structure of a gas guide component of a chemical vapor deposition (CVD) device proposed by the present invention; Figure 6 A schematic diagram of the bottom structure of a placement component of a chemical vapor deposition (CVD) device proposed by the present invention; Figure 7 A schematic diagram of the gas guide tube structure of a chemical vapor deposition (CVD) device proposed by the present invention; Figure 8 A schematic diagram of the structure of a rotating component of a chemical vapor deposition (CVD) device proposed by the present invention; Fig. 9 A schematic diagram of the structure of an adsorption component of a chemical vapor deposition (CVD) device proposed by the present invention; Fig.10 This is a schematic diagram of the bottom structure of an adsorption component of a chemical vapor deposition (CVD) device proposed by the present invention.

[0017] In the figure: 1. heating layer; 2. treatment tank; 3. jet assembly; 31. connecting pipe; 32. jet head; 33. telescopic extrusion tube; 4. placement assembly; 41. placement plate; 42. side frame; 43. sliding block; 5. air guide assembly; 51. mounting tube; 52. air guide tube; 53. jet end; 6. elastic member; 61. fixing ring; 62. bottom ring; 63. spring tube; 7. linkage assembly; 71. rotating gear disc; 72. driving gear disc; 73. clamping member; 8. adsorption assembly; 81. suction cup; 82. connecting pipe; 83. folding airbag ring; 9. rotating assembly; 91. driving column; 92. rotating seat; 10. sliding groove; 11. bayonet; 12. clamping tube; 13. limiting ring. DETAILED DESCRIPTION

[0018] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0019] The terms such as "upper", "lower", "left", "right", "middle" and "one" used in the present invention are only for the convenience of description and are not used to limit the scope of the present invention. Changes or adjustments to their relative relationships should be regarded as the scope of the present invention without substantially changing the technical content.

[0020] Reference Figure 1-Figure 3A chemical vapor deposition (CVD) reaction chamber comprises: a heating layer 1, characterized in that a rectangular reaction space is arranged inside the heating layer 1, and a plurality of conduits are symmetrically arranged on both sides of the inner wall of the reaction space, and the plurality of conduits are respectively used to introduce gaseous precursors and discharge exhaust gas; Two sliding grooves 10 are symmetrically arranged on the bottom surface of the reaction space, and a limiting groove is arranged in the middle of the two sliding grooves 10 . The depth of the limiting groove is greater than the depth of the sliding groove 10 .

[0021] Reference Figure 1-Figure 10 A chemical vapor deposition (CVD) device using the above reaction chamber comprises: a processing tank 2 and a gas charging pipe fixedly connected to the upper end of the processing tank 2, characterized in that the heating layer 1 is installed inside the processing tank 2, and a plurality of jet assemblies 3 are arranged on the upper end of the heating layer 1, and the plurality of jet assemblies 3 are connected to the gas charging pipe at the upper end for extracting the reaction gas; A plurality of placement components 4 are arranged inside the reaction space, and the placement components 4 include a plurality of placement plates 41, a plurality of side frames 42, and two sliding blocks 43. The plurality of placement plates 41 are horizontally and parallelly fixedly connected between the plurality of side frames 42. The placement plates 41 are annularly provided with a plurality of placement grooves. The two sliding blocks 43 are symmetrically fixedly connected to the bottom surface of the lowest placement plate 41 and are slidably arranged inside the sliding groove 10. A mounting opening is provided in the middle of the placement plate 41, and a plurality of mounting openings of the placement plates 41 are each provided with an air guide assembly 5, the air guide assembly 5 comprising a mounting tube 51, an air guide tube 52 and an air jet end 53, the mounting tube 51 being fixedly mounted inside the mounting opening, the air guide tube 52 being elastically mounted inside the mounting tube 51 through an elastic member 6, and the air jet end 53 being fixedly connected to the bottom end of the air guide tube 52; The air guide end of the jet assembly 3 moves downward, driving the air guide pipe 52 to move downward, thereby squeezing and connecting the air guide pipes 52 in the plurality of air guide assemblies 5 .

[0022] In the embodiment of the application of the above technical solution, the reaction chamber with the sliding groove 10 disposed therein can complete the loading and unloading of semiconductors more quickly, thereby improving the efficiency of coating.

[0023] The semiconductors are placed in multiple placement grooves respectively, and the gas guide end of the jet assembly 3 is moved downward to connect the multiple gas guide pipes 52 into a complete gas guide pipe 52. At the same time, the jet end head 53 is moved out of the installation tube 51. The multiple jet end heads 53 are respectively located on the upper side of the multiple placement plates 41, and are used to evenly spray the introduced reaction gas on the placement plates 41, thereby ensuring that the semiconductor coating speed of different layers is the same.

[0024] There is a gap between the upper and lower air guide components 5, which facilitates the robot arm to fix multiple semiconductors in the placement slot at the same time, thereby increasing the speed of loading and unloading.

[0025] The present invention evenly distributes the reaction gas on semiconductors of different layers, thereby avoiding uneven distribution of the reaction gas and improving the coating effect on the semiconductor.

[0026] The preferred technical solution in this embodiment is: Reference Figure 3-6 The jet assembly 3 includes a connecting pipe 31, a jet head 32 and a telescopic extrusion pipe 33. The connecting pipe 31 is fixedly mounted on the top wall of the reaction space, the jet head 32 is fixedly connected to the bottom end of the connecting pipe 31, and the telescopic extrusion pipe 33 is fixedly connected to the bottom end of the jet head 32; The air guide pipe 52 is provided with a bayonet 11, and the bottom end of the jet end 53 is provided with a clamping tube 12. The bayonet 11, the bottom end of the telescopic extrusion tube 33 and the clamping tube 12 are all polygonal and are used for clamping each other.

[0027] When the reaction gas is introduced, the telescopic extrusion tube 33 is controlled to move up and down, so that the bottom end of the telescopic extrusion tube 33 is in contact and extrusion with the topmost air guide tube 52, driving the air guide tube 52 to move downward, so that the clamping tube 12 at the bottom end of the upper air guide tube 52 is clamped with the clamping port 11 above the lower air guide tube 52, thereby connecting multiple air guide tubes 52 into a connected pipeline, and the reaction gas is ejected through the nozzle 32 and the nozzle end 53 through the upper connecting tube 31, so that the reaction gas is evenly sprayed and distributed between the placement plates 41 of different layers, ensuring the uniformity of the coating.

[0028] The polygonal clamping tube 12 and the clamping port 11 can ensure the fixing of the upper and lower multiple air guide tubes 52, and at the same time ensure that the pipeline formed by the multiple air guide tubes 52 can rotate synchronously, so that the air jet ends 53 at different upper and lower positions rotate at the same speed.

[0029] Reference Figure 7 The installation tube 51 is provided with a sliding space inside, and a limiting ring 13 is provided inside the sliding space. The limiting rings 13 inside the plurality of installation tubes 51 are located at different positions, and the upper limiting rings 13 are located closer to the bottom end of the installation tube 51; The elastic member 6 is arranged inside the sliding space and above the limiting ring 13. The elastic member 6 includes a fixing ring 61, a bottom ring 62 and a spring tube 63. The fixing ring 61 is fixedly sleeved on the air guide tube 52. The bottom ring 62 and the spring tube 63 are sleeved on the air guide tube 52. Both ends of the spring tube 63 are fixedly connected to the fixing ring 61 and the bottom ring 62.

[0030] Since the air guide tubes 52 at different upper and lower positions need to move downward by different distances, the upper air guide tube 52 moves downward by a longer distance than the lower air guide tube 52, resulting in different positions of the limit rings 13 inside different mounting tubes 51, ensuring that the multiple air guide tubes 52 can be snapped together after being squeezed and moved downward.

[0031] The elastic member 6 is used to restore the air guide tube 52 to its original position when it is not squeezed by external force. Since the fixing ring 61 is fixedly connected to the air guide tube 52, the entire elastic member 6 will be driven to rotate during the rotation of the air guide tube 52. Therefore, the limiting ring 13 and the bottom ring 62 are made of smooth material to reduce friction loss.

[0032] Reference Figure 8-9 A linkage assembly 7 is provided inside the placement plate 41, and the linkage assembly 7 includes a plurality of rotating toothed discs 71, a driving toothed disc 72 and a clamping member 73. The plurality of rotating toothed discs 71 are rotatably installed inside the plurality of placement grooves respectively, and the driving toothed disc 72 is rotatably installed inside the mounting tube 51, and a driving port is opened in the middle of the driving toothed disc 72. The driving toothed disc 72 is meshedly connected with the plurality of rotating toothed discs 71 for driving the rotating toothed disc 71 to rotate. The clamping member 73 is fixedly connected to the air guide tube 52, and the clamping member 73 and the driving port are both polygonal, and the clamping member 73 is used to drive the driving toothed disc 72 to rotate.

[0033] Since the position of the nozzle that sprays the reaction gas remains unchanged, it is easy to cause the coating forming speed of the semiconductor close to the nozzle to be fast, while the forming speed on the other side is slower.

[0034] In order to improve the uniform formation of the coating on the surface of the semiconductor, when the air duct 52 moves downward and is connected to each other, it will drive the clamping member 73 to move downward, and the clamping member 73 that moves downward will be clamped inside the driving port in the middle of the driving gear disc 72. When the air duct 52 rotates, the clamping member 73 will drive the driving gear disc 72 to rotate, and the rotating driving gear disc 72 will drive multiple rotating gear discs 71 to rotate at the same time, thereby causing the semiconductor placed on the rotating gear disc 71 to rotate, so that the ejected reaction gas is evenly distributed on the surface of the semiconductor, thereby making the coating evenly cover the surface of the semiconductor.

[0035] Reference Figure 7-10 , a plurality of the rotating toothed discs 71 are provided with adsorption components 8, and the adsorption components 8 are used to adsorb and fix the objects placed on the rotating toothed discs 71; The adsorption assembly 8 includes a plurality of suction cups 81, a plurality of connecting tubes 82 and a folding airbag ring 83. The plurality of suction cups 81 are fixedly connected to the center of the rotating gear disc 71. The folding airbag ring 83 is sleeved on the air guide tube 52, and the upper end is rotatably connected to the bottom wall of the driving gear disc 72, and the bottom end is rotatably connected to the fixed ring 61. One end of the plurality of connecting tubes 31 is rotatably installed on the bottom of the plurality of rotating gear discs 71, respectively, and is connected to the inside of the suction cup 81, and the other end is fixedly connected to the folding airbag ring 83.

[0036] Since the semiconductor placed on the rotating gear disc 71 will rotate, in order to ensure the synchronous rotation of the semiconductor and the rotating gear disc 71 , it is necessary to strengthen the fixation between the semiconductor and the rotating gear disc 71 .

[0037] When no coating treatment is performed, the semiconductor is placed on the suction cup 81, and there is no adsorption force between the suction cup 81 and the semiconductor. After the reaction gas is introduced, the air guide tube 52 moves downward, which will drive the fixing ring 61 fixedly connected to the air guide tube 52 to move downward, so that the distance between the fixing ring 61 and the limiting ring 13 becomes larger, and the folding airbag ring 83 fixed between the fixing ring 61 and the limiting ring 13 is stretched and expanded. The folding airbag ring 83 draws air from the positions of multiple connecting tubes 82, thereby drawing out the gas between the suction cup 81 and the semiconductor, forming a negative pressure, adsorbing the semiconductor on the suction cup 81, and strengthening the fixation of the semiconductor.

[0038] At the same time, when the coating is completed and the multiple air guide tubes 52 are separated, the folded air bag ring 83 squeezes out the exhaust, so that the suction cup 81 and the semiconductor are separated again, which facilitates the transfer of the semiconductor.

[0039] Reference Figure 3 The limiting groove has two bottom grooves symmetrically arranged inside, and the bottom groove is located directly below the jet assembly 3, and a rotating assembly 9 is arranged inside the bottom groove; The rotating assembly 9 includes a driving column 91 and a rotating seat 92 . The driving column 91 is fixedly installed inside the bottom groove, and the rotating seat 92 is fixedly connected to the top of the driving column 91 .

[0040] When the reaction gas begins to be introduced, the driving column 91 is controlled to extend and retract, driving the rotating seat 92 to move upward, so that the rotating seat 92 is fixed to the bottom end of the lowest air guide tube 52, and the air guide tube 52 is driven to rotate by the rotating seat 92. The rotating air guide tube 52 at the bottom will drive the air guide tube 52 clamped at the top to rotate synchronously, thereby rotating the jet end 53 installed on the air guide tube 52, and the rotating jet end 53 will evenly spray the reaction gas.

[0041] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A chemical vapor deposition (CVD) reaction chamber, comprising: The heating layer (1) is characterized in that a rectangular reaction space is arranged inside the heating layer (1), and a plurality of conduits are symmetrically arranged on both sides of the inner wall of the reaction space, and the plurality of conduits are respectively used to introduce gaseous precursors and discharge exhaust gas; Two sliding grooves (10) are symmetrically provided on the bottom surface of the reaction space, and a limiting groove is provided in the middle of the two sliding grooves (10), wherein the depth of the limiting groove is greater than the depth of the sliding groove (10).

2. A chemical vapor deposition (CVD) device using the reaction chamber of claim 1, comprising: A processing tank (2) and a gas charging pipe fixedly connected to the upper end of the processing tank (2), characterized in that the heating layer (1) is installed inside the processing tank (2), a plurality of jet assemblies (3) are arranged on the upper end of the heating layer (1), and the plurality of jet assemblies (3) are connected to the gas charging pipe at the upper end for extracting the reaction gas; A plurality of placement components (4) are arranged inside the reaction space, and the placement components (4) include a plurality of placement plates (41), a plurality of side frames (42) and two sliding blocks (43). The plurality of placement plates (41) are horizontally and parallelly fixedly connected between the plurality of side frames (42). The placement plates (41) are provided with a plurality of placement grooves in an annular shape. The two sliding blocks (43) are symmetrically fixedly connected to the bottom surface of the lowest placement plate (41) and are slidably arranged inside the sliding groove (10); A mounting opening is provided in the middle of the placement plate (41), and an air guide assembly (5) is arranged inside the mounting openings of the plurality of placement plates (41). The air guide assembly (5) comprises a mounting tube (51), an air guide tube (52) and an air jet end head (53). The mounting tube (51) is fixedly mounted inside the mounting opening, the air guide tube (52) is elastically mounted inside the mounting tube (51) via an elastic member (6), and the air jet end head (53) is fixedly connected to the bottom end of the air guide tube (52); The air guide end of the jet assembly (3) moves downward, driving the air guide pipe (52) to move downward, thereby squeezing and connecting the air guide pipes (52) in the plurality of air guide assemblies (5).

3. A chemical vapor deposition (CVD) device according to claim 2, characterized in that: The jet assembly (3) comprises a connecting pipe (31), a jet head (32) and a telescopic extrusion pipe (33); the connecting pipe (31) is fixedly mounted on the top wall of the reaction space; the jet head (32) is fixedly connected to the bottom end of the connecting pipe (31); and the telescopic extrusion pipe (33) is fixedly connected to the bottom end of the jet head (32).

4. A chemical vapor deposition (CVD) device according to claim 3, characterized in that: The air guide tube (52) is provided with a bayonet (11), and the bottom end of the air jet end (53) is provided with a clamping tube (12). The bayonet (11), the bottom end of the telescopic extrusion tube (33) and the clamping tube (12) are all polygonal and are used to be clamped to each other.

5. A chemical vapor deposition (CVD) device according to claim 4, characterized in that: A sliding space is provided inside the installation tube (51), and a limiting ring (13) is provided inside the sliding space, wherein the limiting rings (13) inside the plurality of installation tubes (51) are located at different positions, and the upper limiting rings (13) are located closer to the bottom end of the installation tube (51); The elastic member (6) is arranged inside the sliding space and is located above the limiting ring (13). The elastic member (6) comprises a fixing ring (61), a bottom ring (62) and a spring tube (63). The fixing ring (61) is fixedly sleeved on the air guide tube (52). The bottom ring (62) and the spring tube (63) are sleeved on the air guide tube (52). Both ends of the spring tube (63) are fixedly connected to the fixing ring (61) and the bottom ring (62).

6. A chemical vapor deposition (CVD) device according to claim 5, characterized in that: A linkage assembly (7) is arranged inside the placement plate (41), and the linkage assembly (7) comprises a plurality of rotating toothed discs (71), a driving toothed disc (72) and a clamping member (73). The plurality of rotating toothed discs (71) are respectively rotatably mounted inside the plurality of placement slots, the driving toothed disc (72) is rotatably mounted inside the mounting tube (51), and a driving opening is provided in the middle of the driving toothed disc (72). The driving toothed disc (72) is meshedly connected with the plurality of rotating toothed discs (71) and is used to drive the rotating toothed disc (71) to rotate. The clamping member (73) is fixedly connected to the air guide tube (52), the clamping member (73) and the driving opening are both polygonal, and the clamping member (73) is used to drive the driving toothed disc (72) to rotate.

7. A chemical vapor deposition (CVD) device according to claim 6, characterized in that: A plurality of the rotating toothed discs (71) are provided with adsorption components (8), and the adsorption components (8) are used to adsorb and fix objects placed on the rotating toothed discs (71).

8. The chemical vapor deposition (CVD) equipment according to claim 7, characterized in that: The adsorption assembly (8) comprises a plurality of suction cups (81), a plurality of connecting tubes (82) and a folding airbag ring (83). The plurality of suction cups (81) are fixedly connected to the center of a rotating toothed disc (71). The folding airbag ring (83) is sleeved on the air guide tube (52), and the upper end is rotatably connected to the bottom wall of the driving toothed disc (72), and the lower end is rotatably connected to the fixing ring (61). One end of the plurality of connecting tubes (31) is rotatably mounted on the bottom of the plurality of rotating toothed discs (71) and is connected to the inside of the suction cups (81), and the other end is fixedly connected to the folding airbag ring (83).

9. The chemical vapor deposition (CVD) equipment according to claim 2, characterized in that: Two bottom grooves are symmetrically arranged inside the limiting groove, the bottom grooves are located directly below the jet assembly (3), and a rotating assembly (9) is arranged inside the bottom grooves.

10. The chemical vapor deposition (CVD) equipment according to claim 9, characterized in that: The rotating assembly (9) comprises a driving column (91) and a rotating seat (92); the driving column (91) is fixedly mounted inside the bottom groove; and the rotating seat (92) is fixedly connected to the top end of the driving column (91).

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