Single crystal growth device and method, computer equipment and storage medium

Abstract

The invention provides a single crystal growth device and method, computer equipment and a storage medium, the growth state of a crystal in a growth cavity can be monitored through growth monitoring equipment, a control instruction is sent to a laser processing device through a control unit when needed, the laser processing device is controlled to emit a laser beam to a window of the growth cavity, and the growth state of the crystal in the growth cavity is monitored. The polycrystal part of the crystal in the growth cavity is removed, so that the single crystal quality is improved.

Description

Technical Field

[0001] The present disclosure relates to the technical field of single crystal growth, and in particular to a single crystal growth device, method, computer equipment and storage medium. Background Art

[0002] Diamond has a wide range of applications due to its excellent acoustic, optical, electrical, thermal, and mechanical properties, such as electronics and industrial semiconductors, optics and optoelectronics, quantum communications, and diamond jewelry. Natural diamonds are no longer able to meet market demand due to their scarce production, impure texture, and high mining costs, especially the demand for high-quality, thick-sized single-crystal diamonds. Microwave Plasma Chemical Vapor Deposition (MPCVD) is currently the main method for artificially synthesizing single-crystal diamonds.

[0003] MPCVD equipment usually uses an open base to carry a square thin single crystal substrate for crystal growth. During the growth process, there is a strong tip discharge phenomenon at the edge or tip of the substrate, which makes the plasma density unevenly distributed, and then leads to uneven distribution of electric field and temperature on the substrate surface, and the temperature at the edge of the substrate is higher than that at the center. When growing thick crystals, the corners and top of the growing crystal surface form non-epitaxial features, namely polycrystalline, which limits the top growth size of the single crystal and also affects the quality of the grown single crystal. Summary of the invention

[0004] The embodiments of the present disclosure at least provide a single crystal growth device, method, computer equipment and storage medium.

[0005] In a first aspect, an embodiment of the present disclosure provides a single crystal growth device, including a growth chamber, a growth monitoring device, a laser processing device, and a control unit; the growth chamber is provided with one or more windows, the growth monitoring device and the laser processing device are connected to the growth chamber through the windows, and the growth monitoring device and the laser processing device are connected to the control unit;

[0006] The growth chamber is used to provide a growth environment for the crystal;

[0007] The growth monitoring device is used to monitor the growth state of the crystal in the growth chamber;

[0008] The control unit is used to send a control instruction to the laser processing device according to the growth state of the crystal monitored by the growth monitoring device;

[0009] The laser processing device is used to remove the polycrystalline part of the crystal in the growth chamber by emitting a laser beam to the window based on the control instruction.

[0010] In an optional embodiment, the growth monitoring device includes a visual sensor and / or a temperature sensor; the visual sensor and / or the temperature sensor is connected to the growth chamber through the window; the growth state of the crystal in the growth chamber includes the color and / or temperature of at least one position area of ​​the crystal.

[0011] In an optional embodiment, the visual sensor includes a visual observation sensor and a visual positioning sensor; the visual positioning sensor is coaxial and confocal with the optical path of the laser processing device.

[0012] In an optional embodiment, the growth chamber includes a microwave plasma chemical vapor deposition MPCVD growth chamber.

[0013] In an optional embodiment, the laser beam is a continuous laser or a pulsed laser.

[0014] In an optional embodiment, the growth chamber includes a cover plate and a substrate stage; the substrate stage is provided with a water cooling component and a lifting component; the top and side of the cover plate are provided with through holes, and the through holes are used to be tightly connected with the window; the lifting component is used to control the distance between the crystal and the plasma cloud in the growth chamber; the plasma cloud is generated by microwave discharge of the reaction gas introduced into the growth chamber.

[0015] In an optional embodiment, the beam deflection range and scanning range of the laser processing device are greater than or equal to the crystal growth area range in the growth chamber; the monitoring range of the growth monitoring equipment is greater than or equal to the crystal growth area range in the growth chamber.

[0016] In a second aspect, an embodiment of the present disclosure further provides a single crystal growth method, which is applied to the single crystal growth device described in the first aspect or any possible implementation manner of the first aspect, the method comprising:

[0017] In response to starting single crystal growth, acquiring a growth state of the crystal in the growth chamber using the growth monitoring device;

[0018] Based on the growth state, determining whether the crystal grows a polycrystalline portion and position information of the polycrystalline portion on the crystal;

[0019] When it is detected that the crystal has grown a polycrystalline part, controlling the laser processing device to emit the laser beam through the window to remove the polycrystalline part of the crystal in the growth chamber;

[0020] When the crystal meets the preset cut-off condition, the single crystal growth is stopped.

[0021] In an optional implementation, controlling the laser processing device to emit the laser beam through the window to remove the polycrystalline portion of the crystal in the growth chamber includes:

[0022] Based on the position information of the polycrystalline part, determining the initial irradiation position and movement trajectory of the laser processing device;

[0023] According to the initial irradiation position and the movement trajectory, the laser processing device is controlled to perform removal.

[0024] In an optional embodiment, when it is detected that the crystal grows a polycrystalline part, controlling the laser processing device to emit the laser beam through the window to remove the polycrystalline part of the crystal in the growth chamber includes:

[0025] In the case where it is detected that the crystal grows a polycrystalline part, determining the growth position of the polycrystalline part; controlling the laser processing device to emit the laser beam to the polycrystalline part to remove the polycrystalline part of the crystal in the growth chamber; or,

[0026] When it is detected that the crystal has grown a polycrystalline part, the polycrystalline growth timing is started; when the polycrystalline growth timing meets the preset time length, the laser processing device is controlled to emit the laser beam through the window to remove the polycrystalline part of the crystal in the growth chamber.

[0027] In an optional implementation, controlling the laser processing device to emit the laser beam through the window to remove the polycrystalline portion of the crystal in the growth chamber includes:

[0028] Stopping the supply of reaction gases other than hydrogen to the growth chamber, and gradually reducing the power of microwaves in the growth chamber; the reaction gases are used for the growth of the crystal;

[0029] Controlling the laser processing device to emit the laser beam to the polycrystalline portion to remove the polycrystalline portion of the crystal in the growth chamber;

[0030] After the removal of the polycrystalline portion is completed, the microwave in the growth chamber is turned on;

[0031] After detecting that the polycrystalline part on the crystal is completely removed, the microwave is turned on again and the reaction gas other than hydrogen is delivered to the growth chamber.

[0032] In an optional implementation, controlling the laser processing device to emit the laser beam through the window to remove the polycrystalline portion of the crystal in the growth chamber includes:

[0033] Stopping the supply of reaction gases including hydrogen to the growth chamber, and gradually reducing the power of microwaves in the growth chamber;

[0034] Controlling the laser processing device to emit the laser beam to the polycrystalline portion to remove the polycrystalline portion of the crystal in the growth chamber;

[0035] After the removal of the polycrystalline portion is completed, the microwave in the growth chamber is turned on and the hydrogen in the reaction gas is transported to the growth chamber;

[0036] After detecting that the polycrystalline portion on the crystal is completely removed, the reaction gas is supplied to the growth chamber again.

[0037] In an optional implementation, controlling the laser processing device to emit the laser beam through the window to remove the polycrystalline portion of the crystal in the growth chamber includes:

[0038] Stopping the supply of reaction gases including hydrogen to the growth chamber, supplying oxygen to the growth chamber, and gradually reducing the power of microwaves in the growth chamber;

[0039] Controlling the laser processing device to emit the laser beam to the polycrystalline portion to remove the polycrystalline portion of the crystal in the growth chamber;

[0040] After the polycrystalline part is completed, the microwave in the growth chamber is turned on and hydrogen is supplied to the growth chamber;

[0041] After detecting that the polycrystalline portion on the crystal is completely removed, the reaction gas is supplied to the growth chamber again.

[0042] In an optional implementation, controlling the laser processing device to emit the laser beam through the window to remove the polycrystalline portion of the crystal in the growth chamber includes:

[0043] The laser processing device is controlled to emit the laser beam to the top and / or side edges of the single crystal portion of the crystal, and the top and / or side edges are chamfered.

[0044] In a third aspect, an optional implementation of the present disclosure further provides a computer device, a processor, and a memory, wherein the memory stores machine-readable instructions executable by the processor, and the processor is used to execute the machine-readable instructions stored in the memory, and when the machine-readable instructions are executed by the processor, the machine-readable instructions perform the steps in the above-mentioned second aspect, or any possible implementation of the second aspect.

[0045] In a fourth aspect, an optional implementation of the present disclosure further provides a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed, the steps of the above-mentioned second aspect, or any possible implementation of the second aspect are executed.

[0046] For a description of the effects of the above-mentioned single crystal growth method, computer equipment, and computer-readable storage medium, please refer to the description of the above-mentioned single crystal growth device, which will not be repeated here.

[0047] It should be understood that the above general description and the following detailed description are merely exemplary and explanatory, and are not intended to limit the technical solutions of the present disclosure.

[0048] The single crystal growth device, method, computer equipment and storage medium provided in the embodiments of the present disclosure can monitor the growth state of the crystal in the growth chamber through the growth monitoring device, and send control instructions to the laser processing device through the control unit when necessary, so as to control the laser processing device to remove the polycrystalline part of the crystal in the growth chamber by emitting a laser beam to the window of the growth chamber, thereby achieving the removal of the polycrystalline part in the growth environment of the crystal and improving the crystal quality.

[0049] In order to make the above-mentioned objectives, features and advantages of the present disclosure more obvious and easy to understand, preferred embodiments are specifically cited below and described in detail with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the following is a brief introduction to the drawings required for use in the embodiments. The drawings herein are incorporated into the specification and constitute a part of the specification. These drawings illustrate embodiments consistent with the present disclosure and are used together with the specification to illustrate the technical solutions of the present disclosure. It should be understood that the following drawings only illustrate certain embodiments of the present disclosure and should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can also be obtained based on these drawings without creative work.

[0051] Figure 1 A schematic diagram of a single crystal growth device provided by some embodiments of the present disclosure is shown;

[0052] Figure 2 A flow chart showing a single crystal growth method provided by some embodiments of the present disclosure is shown;

[0053] Figure 3 One of the schematic diagrams of the interior of a growth chamber in a single crystal growth device provided in some embodiments of the present disclosure is shown;

[0054] Figure 4A second schematic diagram showing the interior of a growth chamber in a single crystal growth device provided in some embodiments of the present disclosure;

[0055] Figure 5 A third schematic diagram showing the interior of a growth chamber in a single crystal growth device provided in some embodiments of the present disclosure;

[0056] Figure 6 A schematic diagram of a computer device provided by some embodiments of the present disclosure is shown. DETAILED DESCRIPTION

[0057] In order to make the purpose, technical scheme and advantages of the embodiments of the present disclosure clearer, the technical scheme in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all of the embodiments. The components of the embodiments of the present disclosure generally described and shown here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present disclosure is not intended to limit the scope of the present disclosure claimed for protection, but merely represents the selected embodiments of the present disclosure. Based on the embodiments of the present disclosure, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present disclosure.

[0058] Research has found that existing single crystal generation devices and methods are unable to remove the polycrystalline part during the single crystal growth process. It is necessary to first stop the single crystal growth, take the single crystal out of the growth environment, and move it to a separate polycrystalline removal device before the polycrystalline part can be removed.

[0059] Based on the above research, the present disclosure provides a single crystal growth device, method, computer equipment and storage medium, which can monitor the growth state of the crystal in the growth chamber through a growth monitoring device, and send control instructions to the laser processing device through a control unit when necessary, so as to control the laser processing device to remove the polycrystalline part of the crystal in the growth chamber by emitting a laser beam to the window of the growth chamber, thereby achieving the removal of the polycrystalline part in the growth environment of the crystal and improving the crystal quality.

[0060] The defects existing in the above solutions are the results obtained by the inventor after practice and careful research. Therefore, the discovery process of the above problems and the solutions proposed by the present disclosure for the above problems below should be the contributions made by the inventor to the present disclosure during the disclosure process.

[0061] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0062] To facilitate understanding of this embodiment, a single crystal production device disclosed in the embodiment of the present disclosure is first described in detail. Figure 1 , which is a schematic diagram of a single crystal growth device provided by an embodiment of the present disclosure. The single crystal growth device 10 includes a growth chamber 11, a growth monitoring device 12, a laser processing device 13 and a control unit 14.

[0063] The growth chamber 11 is used to provide a physical and chemical environment for crystal growth. The crystal may be a diamond crystal. The growth chamber 11 may provide a stable reaction environment for crystal growth, such as temperature control, pressure control, etc.

[0064] The growth chamber can transfer heat evenly and keep the temperature of the growth area stable. In the High Pressure High Temperature (HPHT) method, the growth chamber maintains a high pressure environment through mechanical and material design to ensure that carbon atoms are deposited in the form of diamond crystals. The growth chamber can also isolate the external environment to prevent impurities (such as oxygen or other gases) from contaminating the diamond crystals. In the microwave plasma chemical vapor deposition MPCVD method, the growth chamber can be used to accurately control the concentration and flow direction of reaction gases such as hydrogen and methane to form a stable plasma for the crystal to react and achieve single crystal growth.

[0065] In the embodiment of the present disclosure, the above-mentioned growth chamber 11 can be provided with one or more windows 111, and the growth monitoring equipment 12 and the laser processing device 13 are connected to the growth chamber 11 through the windows 111, and the growth monitoring equipment 12 and the laser processing device 13 are connected to the control unit 14.

[0066] The growth monitoring device 12 can be used to monitor the growth state of the crystal in the growth chamber. Exemplarily, the growth monitoring device 12 can include a visual sensor 121 and / or a temperature sensor 122, and the visual sensor 121 and / or the temperature sensor 122 can be connected to the growth chamber 11 through the window 111.

[0067] The visual sensor 121 and / or the temperature sensor 122 can monitor the growth state of the crystal in the growth chamber 11 through the window. The growth state of the crystal can include the color and / or temperature of at least one position area of ​​the crystal.

[0068] The visual sensor 121 may include a camera, which may be an infrared camera; the temperature sensor may be an infrared thermometer.

[0069] The difference in color and / or temperature between different regions of the crystal can be used to determine whether the crystal has grown into a polycrystalline structure. The color of a single crystal is usually uniform because the atoms in the single crystal are arranged regularly, there are no grain boundaries, and the light is scattered less; the color of a polycrystalline structure is often uneven, and there may be areas of different brightness. This is because there are a large number of grain boundaries and defects in the polycrystalline structure, which leads to enhanced scattering and reflection of light in different directions. Single crystal growth requires stable thermal field conditions with uniform temperature gradients, while polycrystalline growth may be caused by unstable thermal fields, such as local temperatures that are too high or too low, resulting in the simultaneous formation of multiple nuclei, and different growth rates in polycrystalline regions, which may lead to uneven local temperature distribution.

[0070] The above-mentioned growth chamber 11 may include a cover plate 112 and a substrate stage 113. The substrate stage 113 may be provided with a water cooling component and a lifting component. The water cooling component may be used to control the temperature of the crystal growth environment and maintain the temperature difference on the surface of the growing crystal. The lifting component may be used to control the distance between the crystal and the plasma cloud in the growth chamber 11; wherein the plasma cloud is generated by microwave discharge of the reaction gas introduced into the growth chamber.

[0071] In a possible implementation, the growth chamber 11 may include an MPCVD growth chamber, into which a reaction gas may be introduced, and the reaction gas may include one or more of a carbon source gas (such as methane), a diluent gas (such as hydrogen, argon, etc.), a doping gas (such as a phosphorus source gas, a boron source gas, nitrogen, etc.), and an auxiliary gas (such as oxygen, water vapor, carbon dioxide, etc.). Optionally, the growth chamber 11 may also be provided with an exhaust hole.

[0072] In a possible implementation, in order to improve the removal effect of the laser processing device on the polycrystalline part and reduce the influence of the reaction gas on the laser beam, the wavelength of the laser beam can be set according to the reaction gas, so that the wavelength of the laser beam is a wavelength weakly absorbed by the reaction gas or the reaction gas plasma, and the absorption capacity of the reaction gas or the reaction gas plasma to the laser beam is controlled to be lower than the target threshold value to ensure the removal effect of the laser beam. For example, the absorption rate of the reaction gas plasma to the laser beam is lower than a certain preset percentage value.

[0073] In a possible implementation, the visual sensor 121 may include a visual observation sensor and a visual positioning sensor. The visual observation sensor may be used to monitor and observe the crystal and obtain crystal status information; the visual positioning sensor may be used to provide accurate spatial positioning information and determine the position of the polycrystalline portion. Optionally, in order to facilitate the removal of the polycrystalline portion using a laser processing device, the visual positioning sensor may be coaxially confocal with the optical path of the laser processing device through a beam combiner.

[0074] Optionally, the top and the side of the cover plate 112 may be provided with through holes, and the through holes may be used for sealing connection with the window 111 .

[0075] When the growth monitoring device 12 collects the growth status of the crystal, it can send the growth status to the control unit 14 in real time. The control unit 14 can determine whether the crystal grows a polycrystalline part and the position information of the polycrystalline part on the crystal based on the growth status.

[0076] When the control unit 14 detects that the crystal has grown a polycrystalline part, the control unit 14 can control the laser processing device 13 to emit a laser beam through the window to remove the polycrystalline part of the crystal in the growth chamber, thereby removing the polycrystalline part in the growth environment of the crystal (removing the polycrystalline in situ), without taking the crystal out of the growth environment, realizing the automation of single crystal growth and polycrystalline removal, and improving crystal quality. At the same time, it avoids the problem of long-term interruption of the growth process and increased time cost, improves the production efficiency of the equipment, and suppresses the generation of edge polycrystalline, and can produce high-quality and thick-sized single crystals in batches at one time.

[0077] In an optional embodiment, the laser processing device 13 may include a laser 131, a beam expander 132, a scanning galvanometer 133, a focusing mirror 134, and a focuser 135. Exemplarily, the laser 131 may be a solid nanosecond or picosecond laser, the wavelength may be 355nm, 532nm or 1064nm, or any other wavelength weakly absorbed by the reaction gas or the reaction gas plasma, and the laser beam may be a continuous laser or a pulsed laser.

[0078] The scanning galvanometer 133 is used to deflect the laser beam; the focusing mirror 134 can be a flat-field focusing mirror for converging the laser beam; the focus adjuster 135 can be a high-precision Z-axis electric lifting platform for adjusting the focal plane of the laser.

[0079] In order to remove the polycrystal, the beam deflection range and scanning range of the laser processing device 13 can be greater than or equal to the crystal growth area range in the growth chamber 11, and the monitoring range of the growth monitoring device 12 can be greater than or equal to the crystal growth area range in the growth chamber 11. The above-mentioned growth monitoring device 12 can select a sensor with an adjustable field of view, and the maximum field of view of the growth monitoring device 12 can be greater than or equal to the crystal growth area range in the growth chamber 11.

[0080] In order to use the above-mentioned single crystal growth device, the embodiment of the present disclosure also provides a single crystal growth method. The execution subject of the method can be the above-mentioned single crystal growth device, or a control unit in the single crystal growth device, and the execution subject is generally a computer device with certain computing capabilities. In some possible implementations, the single crystal growth method can be implemented by a processor calling a computer-readable instruction stored in a memory.

[0081] The single crystal growth method provided by the embodiment of the present disclosure is described below by taking the execution subject as a control unit as an example.

[0082] See also Figure 2 FIG. 1 is a flow chart of a single crystal growth method provided by an embodiment of the present disclosure, the method comprising:

[0083] S201 . In response to starting single crystal growth, obtaining a growth state of the crystal in the growth chamber using the growth monitoring device.

[0084] In this step, when it is detected that the single crystal starts to grow, the growth state of the crystal in the growth chamber can be acquired by using a growth monitoring device.

[0085] The above-mentioned single crystal starts to grow may refer to the conditions that are currently met for the single crystal to start to grow.

[0086] Exemplarily, the pre-treated single crystal substrate (i.e., the above-mentioned crystal) can be neatly placed on the substrate stage in the growth chamber, and then the growth chamber is controlled to start, the gas in the growth chamber is evacuated and hydrogen is introduced, the microwave power of the growth chamber is adjusted, the growth chamber is heated to about 800-1200°C, and the plasma cloud generated by hydrogen is used to etch and clean the single crystal substrate. Afterwards, methane or other carbon source gas and auxiliary gas can be introduced to form a plasma cloud of reactive gas in the growth chamber. The height of the substrate stage can be adjusted by the lifting component in the growth chamber so that the single crystal substrate is kept at a certain distance from the plasma cloud. At this point, the conditions for the start of single crystal growth can be met.

[0087] When obtaining the growth state of the crystal in the growth chamber, the growth state of the crystal can be monitored using a growth monitoring device deployed on the growth chamber cover.

[0088] In a possible implementation, the growth chamber may contain one or more single crystal substrates, and one or more single crystal substrates may be grown simultaneously. The multiple single crystal substrates may be arranged at a certain distance or in close proximity.

[0089] S202: Based on the growth state, determine whether the crystal grows a polycrystalline part and position information of the polycrystalline part on the crystal.

[0090] After the growth state of the crystal is obtained, the color and / or temperature difference of the crystal growth surface can be used to determine whether polycrystals have grown. In this step, different crystals can be distinguished to obtain the growth state of each crystal in the growth chamber.

[0091] S203, when it is detected that the crystal has grown a polycrystalline part, controlling the laser processing device to emit a laser beam through the window to remove the polycrystalline part of the crystal in the growth chamber.

[0092] When the generation of the polycrystalline part is identified, the initial irradiation position and movement trajectory of the laser processing device can be determined according to the position information of the polycrystalline part, and the laser processing device can be controlled to remove the polycrystalline part according to the initial irradiation position and movement trajectory. During the removal process, the laser beam can be repeatedly irradiated according to the set coordinate route, and the coordinate route can be determined according to the position information of the polycrystalline part. After completing the removal of the polycrystalline part of a plane, the irradiation position can be moved downward by the angle adjuster to peel off the polycrystalline part layer by layer until all the polycrystalline parts on the top surface of the single crystal are peeled off.

[0093] During the removal process, the polycrystalline part can be vaporized or transformed into a graphite phase, the vaporized polycrystalline impurities can be discharged from the exhaust hole along with the gas in the growth chamber, and the impurities in the graphite phase can be etched by hydrogen plasma and discharged from the exhaust hole along with the gas.

[0094] In this step, the polycrystalline portion can be removed from each crystal simultaneously or sequentially.

[0095] In a possible implementation, when it is detected that a polycrystalline portion has grown out of a crystal, the laser processing device may be immediately controlled to remove the polycrystalline portion.

[0096] In another possible implementation, when it is detected that a polycrystalline part has grown out of the crystal, it may not be removed immediately, but the removal may be performed after the polycrystalline part meets preset conditions, thereby reducing the number of removal times, reducing the impact of laser removal on the growth process, and improving growth efficiency and removal efficiency.

[0097] Exemplarily, when it is detected that the crystal grows a polycrystalline part, the growth position of the polycrystalline part can be determined; the laser processing device can be controlled to emit the laser beam to the polycrystalline part to remove the polycrystalline part of the crystal in the growth chamber; or,

[0098] When it is detected that the crystal has grown a polycrystalline part, the polycrystalline growth timing can be started; when the polycrystalline growth timing meets the preset time length, the laser processing device is controlled to emit a laser beam through the window to remove the polycrystalline part of the crystal in the growth chamber.

[0099] In this way, when polycrystalline generation is detected at the edge of the crystal and has not obviously spread to the top growth area of ​​the single crystal, the polycrystalline part can be removed.

[0100] In a possible implementation, when the distance between the growth position of the polycrystalline part and the preset area on the top of the crystal is less than or equal to the preset distance, the laser processing device can be controlled to emit the laser beam to the polycrystalline part to remove the polycrystalline part of the crystal in the growth chamber.

[0101] When controlling the laser processing device to emit a laser beam to remove the polycrystalline part of the crystal in the growth chamber, the supply of reaction gas other than hydrogen to the growth chamber can be stopped first, and the power of microwaves in the growth chamber can be gradually reduced; the reaction gas is used for the growth of the crystal; then, the laser processing device is controlled to emit the laser beam to the polycrystalline part to remove the polycrystalline part of the crystal in the growth chamber; after completing the removal of the polycrystalline part, the microwave in the growth chamber is turned on; after detecting that the polycrystalline part on the crystal is completely removed, the microwave is turned on again and the reaction gas other than hydrogen is supplied to the growth chamber.

[0102] In this way, by gradually reducing the microwave power, the temperature in the growth chamber can be slowly reduced, avoiding thermal stress in the crystal structure caused by sudden cooling, reducing the probability of cracks or other defects in the single crystal, and making the temperature gradient on the surface and inside of the crystal tend to be gentle, which helps to maintain the integrity of the single crystal structure and prevent the reformation or expansion of grain boundaries caused by thermal unevenness. Since hydrogen is also passed through the growth chamber, the plasma cloud formed by hydrogen can be used to etch and remove the polycrystalline part or polycrystalline residue, which helps to stabilize the chemical environment and remove the polycrystalline part. The method of gradually reducing the microwave power can be flexibly selected, such as a cyclic low-power annealing method in which the substrate temperature is reduced by 100°C and kept warm for 30 minutes, and another example is an annealing treatment in which the substrate temperature is reduced by 1200°C and kept warm for 2 hours.

[0103] Alternatively, the supply of reaction gas including hydrogen to the growth chamber can be stopped, and the power of microwaves in the growth chamber can be gradually reduced; the reaction gas is used for the growth of the crystal; the laser processing device is controlled to emit the laser beam to the polycrystalline part to remove the polycrystalline part of the crystal in the growth chamber; after the removal of the polycrystalline part is completed, the microwave in the growth chamber is turned on and hydrogen in the reaction gas is supplied to the growth chamber; after detecting that the polycrystalline part on the crystal is completely removed, the reaction gas is supplied to the growth chamber again. The above-mentioned reaction gas including hydrogen can refer to all reaction gases including hydrogen in the process of growing a single crystal, or can refer to part of the reaction gases including hydrogen.

[0104] Alternatively, the supply of reaction gases including hydrogen to the growth chamber may be stopped, oxygen may be introduced into the growth chamber, and the power of microwaves in the growth chamber may be gradually reduced; the laser processing device may be controlled to emit the laser beam to the polycrystalline portion to remove the polycrystalline portion of the crystal in the growth chamber; after the removal of the polycrystalline portion is completed, the microwaves in the growth chamber may be turned on and hydrogen may be supplied to the growth chamber; after detecting that the polycrystalline portion on the crystal is completely removed, the reaction gases may be supplied to the growth chamber again.

[0105] In a possible implementation, the laser processing device can be controlled to emit the laser beam to the top and / or side edges of the single crystal portion of the crystal, and the top and / or side edges can be chamfered. In this implementation, the growth of the single crystal can be continued to achieve the removal of the polycrystalline portion, and by chamfering, the attraction of the crystal tip edge to the plasma can be weakened to inhibit the formation of polycrystalline, reduce the generation of edge stress, more efficiently inhibit the formation of polycrystalline, and form a high-quality, thick-sized single crystal.

[0106] S204 , when the crystal meets a preset cutoff condition, stop the single crystal growth.

[0107] The above-mentioned preset cut-off condition may include that the single crystal grows to a specified thickness and meets the requirements for the single crystal size, and the growth of the single crystal can be stopped.

[0108] See also Figure 3 , Figure 4 as well as Figure 5 Shown are respectively one of the schematic diagrams of the interior of the growth chamber in the single crystal growth device provided in some embodiments of the present disclosure, a second of the schematic diagrams of the interior of the growth chamber in the single crystal growth device provided in some embodiments of the present disclosure, and a third of the schematic diagrams of the interior of the growth chamber in the single crystal growth device provided in some embodiments of the present disclosure.

[0109] Figure 3 3 , a crystal 31 in a growth chamber, a reaction gas 32 (in the form of a plasma cloud), a polycrystalline portion 33 on the crystal 31 , and a laser beam 34 are shown. Figure 3 In the embodiment, the polycrystalline portion can be removed immediately after being detected, and the polycrystalline portion 33 is relatively small.

[0110] Figure 4 A crystal 41 in a growth chamber, a polycrystalline portion 42 on the crystal 41, and a laser beam 43 are shown. Figure 4 In the embodiment, after the polycrystalline part is detected, the polycrystalline part can be removed after the polycrystalline part meets the preset conditions. At this time, the polycrystalline part 42 is relatively large.

[0111] Figure 54 shows a crystal 51 in a growth chamber, a polycrystalline portion 52 on the crystal 51 , a reaction gas 53 (in the form of a plasma cloud), a rounded corner 54 , and a laser beam 55 . Figure 5 In the process, the top and side edges of the single crystal can be rounded to weaken the attraction of the crystal tip edge to the plasma and thus inhibit the formation of polycrystalline.

[0112] Those skilled in the art will appreciate that, in the above method of specific implementation, the order in which the steps are written does not imply a strict execution order and does not constitute any limitation on the implementation process. The specific execution order of the steps should be determined by their functions and possible internal logic.

[0113] The present disclosure also provides a computer device, such as Figure 6 FIG. 1 is a schematic diagram of a computer device structure provided in an embodiment of the present disclosure, including:

[0114] A processor 61 and a memory 62; the memory 62 stores machine-readable instructions executable by the processor 61, and the processor 61 is used to execute the machine-readable instructions stored in the memory 62. When the machine-readable instructions are executed by the processor 61, the processor 61 performs the following steps:

[0115] In response to starting single crystal growth, acquiring a growth state of the crystal in the growth chamber using the growth monitoring device;

[0116] Based on the growth state, determining whether the crystal grows a polycrystalline portion and position information of the polycrystalline portion on the crystal;

[0117] When it is detected that the crystal has grown a polycrystalline part, controlling the laser processing device to emit the laser beam through the window to remove the polycrystalline part of the crystal in the growth chamber;

[0118] When the crystal meets the preset cut-off condition, the single crystal growth is stopped.

[0119] In an optional implementation, the steps performed by the processor 61, wherein controlling the laser processing device to emit the laser beam through the window to remove the polycrystalline portion of the crystal in the growth chamber, includes:

[0120] Based on the position information of the polycrystalline part, determining the initial irradiation position and movement trajectory of the laser processing device;

[0121] According to the initial irradiation position and the movement trajectory, the laser processing device is controlled to remove the polycrystalline part.

[0122] In an optional implementation manner, the steps performed by the processor 61, when detecting that the crystal grows a polycrystalline part, controlling the laser processing device to emit the laser beam to the window to remove the polycrystalline part of the crystal in the growth chamber, include:

[0123] In the case where it is detected that the crystal grows a polycrystalline part, determining the growth position of the polycrystalline part; controlling the laser processing device to emit the laser beam to the polycrystalline part to remove the polycrystalline part of the crystal in the growth chamber; or,

[0124] When it is detected that the crystal has grown a polycrystalline part, the polycrystalline growth timing is started; when the polycrystalline growth timing meets the preset time length, the laser processing device is controlled to emit the laser beam through the window to remove the polycrystalline part of the crystal in the growth chamber.

[0125] In an optional implementation, the steps performed by the processor 61, wherein controlling the laser processing device to emit the laser beam through the window to remove the polycrystalline portion of the crystal in the growth chamber, includes:

[0126] Stopping the supply of reaction gases other than hydrogen to the growth chamber, and gradually reducing the power of microwaves in the growth chamber; the reaction gases are used for the growth of the crystal;

[0127] Controlling the laser processing device to emit the laser beam to the polycrystalline portion to remove the polycrystalline portion of the crystal in the growth chamber;

[0128] After the removal of the polycrystalline portion is completed, the microwave in the growth chamber is turned on;

[0129] After detecting that the polycrystalline part on the crystal is completely removed, the microwave is turned on again and the reaction gas other than hydrogen is delivered to the growth chamber.

[0130] In an optional implementation, the steps performed by the processor 61, wherein controlling the laser processing device to emit the laser beam through the window to remove the polycrystalline portion of the crystal in the growth chamber, includes:

[0131] Stopping the supply of reaction gas including hydrogen to the growth chamber, and gradually reducing the power of microwaves in the growth chamber; the reaction gas is used for the growth of the crystal;

[0132] Controlling the laser processing device to emit the laser beam to the polycrystalline portion to remove the polycrystalline portion of the crystal in the growth chamber;

[0133] After the removal of the polycrystalline portion is completed, the microwave in the growth chamber is turned on and the hydrogen in the reaction gas is transported to the growth chamber;

[0134] After detecting that the polycrystalline portion on the crystal is completely removed, the reaction gas is re-supplied to the growth chamber.

[0135] In an optional implementation, the steps performed by the processor 61, wherein controlling the laser processing device to emit the laser beam through the window to remove the polycrystalline portion of the crystal in the growth chamber, includes:

[0136] Stopping the supply of reaction gases including hydrogen to the growth chamber, supplying oxygen to the growth chamber, and gradually reducing the power of microwaves in the growth chamber;

[0137] Controlling the laser processing device to emit the laser beam to the polycrystalline portion to remove the polycrystalline portion of the crystal in the growth chamber;

[0138] After the removal of the polycrystalline portion is completed, the microwave in the growth chamber is turned on and hydrogen is supplied to the growth chamber;

[0139] After detecting that the polycrystalline portion on the crystal is completely removed, the reaction gas is re-supplied to the growth chamber.

[0140] In an optional implementation, the steps performed by the processor 61, wherein controlling the laser processing device to emit the laser beam through the window to remove the polycrystalline portion of the crystal in the growth chamber, includes:

[0141] The laser processing device is controlled to emit the laser beam to the top and / or side edges of the single crystal portion of the crystal, and the top and / or side edges are chamfered.

[0142] The above-mentioned memory 62 includes internal memory 621 and external memory 622; the memory 621 here is also called internal memory, which is used to temporarily store the calculation data in the processor 61, as well as the data exchanged with the external memory 622 such as the hard disk. The processor 61 exchanges data with the external memory 622 through the internal memory 621.

[0143] The specific execution process of the above instructions can refer to the steps of the single crystal growth method described in the embodiment of the present disclosure, which will not be repeated here.

[0144] The present disclosure also provides a computer-readable storage medium, which stores a computer program, and when the computer program is executed by a processor, the steps of the single crystal growth method described in the above method embodiment are executed. The storage medium can be a volatile or non-volatile computer-readable storage medium.

[0145] The present disclosure also provides a computer program product that carries a program code. The program code includes instructions that can be used to execute the steps of the single crystal growth method described in the above method embodiment. For details, please refer to the above method embodiment, which will not be repeated here.

[0146] The computer program product may be implemented in hardware, software or a combination thereof. In one optional embodiment, the computer program product is implemented as a computer storage medium. In another optional embodiment, the computer program product is implemented as a software product, such as a software development kit (SDK).

[0147] In the several embodiments provided in the present disclosure, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. The device embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some communication interfaces, and the indirect coupling or communication connection of devices or units can be electrical, mechanical or other forms.

[0148] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0149] In addition, each functional unit in each embodiment of the present disclosure may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0150] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a non-volatile computer-readable storage medium that is executable by a processor. Based on this understanding, the technical solution of the present disclosure, or the part that contributes to the prior art or the part of the technical solution, can be embodied in the form of a software product, which is stored in a storage medium and includes several instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present disclosure. The aforementioned storage medium includes: various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk.

[0151] Finally, it should be noted that the above-described embodiments are only specific implementation methods of the present disclosure, which are used to illustrate the technical solutions of the present disclosure, rather than to limit them. The protection scope of the present disclosure is not limited thereto. Although the present disclosure is described in detail with reference to the above-described embodiments, ordinary technicians in the field should understand that any technician familiar with the technical field can still modify the technical solutions recorded in the above-described embodiments within the technical scope disclosed in the present disclosure, or can easily think of changes, or make equivalent replacements for some of the technical features therein; and these modifications, changes or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present disclosure, and should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be based on the protection scope of the claims.

Claims

1. A single crystal growth device, characterized in that: It comprises a growth chamber, a growth monitoring device, a laser processing device and a control unit; the growth chamber is provided with one or more windows, the growth monitoring device and the laser processing device are connected to the growth chamber through the windows, and the growth monitoring device and the laser processing device are connected to the control unit; The growth chamber is used to provide a growth environment for the crystal; The growth monitoring device is used to monitor the growth state of the crystal in the growth chamber; The control unit is used to send a control instruction to the laser processing device according to the growth state of the crystal monitored by the growth monitoring device; The laser processing device is used to remove the polycrystalline part of the crystal in the growth chamber by emitting a laser beam to the window based on the control instruction.

2. The device according to claim 1, characterized in that The growth monitoring device includes a visual sensor and / or a temperature sensor; the visual sensor and / or the temperature sensor is connected to the growth chamber through the window; the growth state of the crystal in the growth chamber includes the color and / or temperature of at least one position area of ​​the crystal.

3. The device according to claim 2, characterized in that The visual sensor includes a visual observation sensor and a visual positioning sensor.

4. The device according to claim 1, characterized in that The growth chamber includes a microwave plasma chemical vapor deposition MPCVD growth chamber.

5. The device according to claim 1, characterized in that The laser beam is a continuous laser or a pulsed laser.

6. The device according to claim 1, characterized in that The growth chamber includes a cover plate and a substrate stage; the substrate stage is provided with a water cooling component and a lifting component; the top and side of the cover plate are provided with through holes, and the through holes are used to be tightly connected with the window; the lifting component is used to control the distance between the crystal and the plasma cloud in the growth chamber; the plasma cloud is generated by microwave discharge of the reaction gas introduced into the growth chamber.

7. The device according to claim 1, characterized in that The beam scanning range of the laser processing device is greater than or equal to the crystal growth area range in the growth chamber; the monitoring range of the growth monitoring equipment is greater than or equal to the crystal growth area range in the growth chamber.

8. A single crystal growth method, characterized in that: Applied to the single crystal growth apparatus as claimed in any one of claims 1 to 7, the method comprising: In response to starting single crystal growth, acquiring a growth state of the crystal in the growth chamber using the growth monitoring device; Based on the growth state, determining whether the crystal grows a polycrystalline portion and position information of the polycrystalline portion on the crystal; When it is detected that the crystal has grown a polycrystalline part, controlling the laser processing device to emit the laser beam through the window to remove the polycrystalline part of the crystal in the growth chamber; When the crystal meets the preset cut-off condition, the single crystal growth is stopped.

9. The method according to claim 8, characterized in that The step of controlling the laser processing device to emit the laser beam through the window to remove the polycrystalline portion of the crystal in the growth chamber comprises: Based on the position information of the polycrystalline part, determining the initial irradiation position and movement trajectory of the laser processing device; According to the initial irradiation position and the movement trajectory, the laser processing device is controlled to remove the polycrystalline part.

10. The method according to claim 8, characterized in that When it is detected that the crystal has grown a polycrystalline part, controlling the laser processing device to emit the laser beam to the window to remove the polycrystalline part of the crystal in the growth chamber comprises: In the case where it is detected that the crystal grows a polycrystalline part, determining the growth position of the polycrystalline part; controlling the laser processing device to emit the laser beam to the polycrystalline part to remove the polycrystalline part of the crystal in the growth chamber; or, When it is detected that the crystal has grown a polycrystalline part, the polycrystalline growth timing is started; when the polycrystalline growth timing meets the preset time length, the laser processing device is controlled to emit the laser beam through the window to remove the polycrystalline part of the crystal in the growth chamber.

11. The method according to any one of claims 8 to 10, characterized in that: The step of controlling the laser processing device to emit the laser beam through the window to remove the polycrystalline portion of the crystal in the growth chamber comprises: Stopping the supply of reaction gases other than hydrogen to the growth chamber, and gradually reducing the power of microwaves in the growth chamber; the reaction gases are used for the growth of the crystal; Controlling the laser processing device to emit the laser beam to the polycrystalline portion to remove the polycrystalline portion of the crystal in the growth chamber; After the removal of the polycrystalline portion is completed, the microwave in the growth chamber is turned on; After detecting that the polycrystalline part on the crystal is completely removed, the microwave is turned on again and the reaction gas other than hydrogen is delivered to the growth chamber.

12. The method according to any one of claims 8 to 10, characterized in that: The step of controlling the laser processing device to emit the laser beam through the window to remove the polycrystalline portion of the crystal in the growth chamber comprises: Stopping the supply of reaction gas including hydrogen to the growth chamber, and gradually reducing the power of microwaves in the growth chamber; the reaction gas is used for the growth of the crystal; Controlling the laser processing device to emit the laser beam to the polycrystalline portion to remove the polycrystalline portion of the crystal in the growth chamber; After the removal of the polycrystalline portion is completed, the microwave in the growth chamber is turned on and the hydrogen in the reaction gas is transported to the growth chamber; After detecting that the polycrystalline portion on the crystal is completely removed, the reaction gas is re-supplied to the growth chamber.

13. The method according to any one of claims 8 to 10, characterized in that: The step of controlling the laser processing device to emit the laser beam through the window to remove the polycrystalline portion of the crystal in the growth chamber comprises: Stopping the supply of reaction gases including hydrogen to the growth chamber, supplying oxygen to the growth chamber, and gradually reducing the power of microwaves in the growth chamber; Controlling the laser processing device to emit the laser beam to the polycrystalline portion to remove the polycrystalline portion of the crystal in the growth chamber; After the removal of the polycrystalline portion is completed, the microwave in the growth chamber is turned on and hydrogen is supplied to the growth chamber; After detecting that the polycrystalline portion on the crystal is completely removed, the reaction gas is re-supplied to the growth chamber.

14. The method according to any one of claims 8 to 10, characterized in that: The step of controlling the laser processing device to emit the laser beam through the window to remove the polycrystalline portion of the crystal in the growth chamber comprises: The laser processing device is controlled to emit the laser beam to the top and / or side edges of the single crystal portion of the crystal, and the top and / or side edges are chamfered.

15. A computer device, characterized in that: include: A processor and a memory, wherein the memory stores machine-readable instructions executable by the processor, and the processor is used to execute the machine-readable instructions stored in the memory. When the machine-readable instructions are executed by the processor, the processor executes the single crystal growth method according to any one of claims 8 to 14.

16. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program. When the computer program is executed by a computer device, the computer device executes the single crystal growth method according to any one of claims 8 to 14.

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