Wafer rotary drying mechanism

Abstract

The application discloses a wafer rotary drying mechanism, which comprises a rotary platform and a plurality of clamping jaws connected to the rotary platform and distributed in a circumferential direction. The clamping jaws have a supporting surface and a clamping surface on a side facing the wafer, or the clamping jaws and the rotary platform cooperate to form the supporting surface and the clamping surface, which are used to jointly clamp the wafer. A centrifugal liquid guiding and draining groove is arranged between the supporting surface and the clamping surface. When the supporting surface and the clamping surface clamp the wafer, at least part of the centrifugal liquid guiding and draining groove is located below the height of the lower surface of the wafer. When the wafer rotates, the liquid remaining on the back of the wafer enters the centrifugal liquid guiding and draining groove under the action of centrifugal force and is drained outward by the centrifugal force. The centrifugal liquid guiding and draining groove can provide guiding and draining space for the liquid flowing in a radial direction through the supporting surface and the vicinity thereof to leave the wafer during the centrifugal rotary drying process, so that the residual liquid can be smoothly drained.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductor integrated circuit chip manufacturing, and particularly relates to a wafer rotary drying mechanism. BACKGROUND

[0002] In semiconductor wafer manufacturing, wafer cleaning and drying are key links throughout the whole process, mainly used for removing contaminants, improving yield and ensuring the stability of subsequent processes. Cleaning and drying run through the six core links of photolithography, ion implantation, CMP, etching, grinding and packaging in wafer manufacturing, directly affecting device performance and yield. The future trend is to combine wet and dry technologies and develop low-energy, high-uniformity automatic cleaning solutions.

[0003] With the continuous progress of semiconductor production technology, the requirements for cleaning and drying of chemical mechanical planarization equipment (CMP equipment) are increasingly improved. In the process of wet wafer processing, it is crucial to ensure that the wafer is completely dried and prevent particles in the solution from re-attaching to its surface. If the wafer is not fully dried, particles in the solution can affect the performance of semiconductor components, leading to equipment failure. Therefore, effectively removing liquid from the wafer plays a key role in ensuring normal operation of the equipment. CMP equipment must use appropriate methods to achieve efficient drying of the wafer to ensure production quality and equipment stability.

[0004] In most CMP equipment, wafer drying is usually done by centrifugal spin-drying method. This method mainly includes clamping device and supporting device in structure. There are three stages for wafer in drying mechanism, and three states for wafer: ① Before drying, the wafer is placed on the supporting device, and the front and back surfaces of the wafer are both wet; ② During the centrifugal spin-drying process, the clamping device clamps the wafer, and the liquid on the front and back surfaces of the wafer is completely spun off in this process due to the centrifugal force, achieving drying; ③ After drying, the rotation of the wafer is stopped, the clamping device releases the wafer, and the wafer is completely dried, the drying mechanism has completed the drying work, and the wafer can enter the next process. Whether the wafer can achieve complete drying is crucial during the centrifugal spin-drying process in stage ②, and the realization of wafer drying depends on whether the wafer can be completely spun off during the centrifugal spin-drying process in stage ②. The working principle of drying the wafer is: the wafer placed on the supporting device is passively driven and fixed by the centrifugal force or actively driven and fixed by the cylinder, magnet, etc. during the centrifugal spin-drying process in stage ②. The rotating motor drives the clamping device to rotate, and then the wafer is rotated, the liquid on the wafer is spun off by the centrifugal force, and the drying is achieved.

[0005] However, there is a difficult problem in actual use: when the wafer rotates, the back surface is always in contact with the support device, and a small angle and a water storage space are formed between the wafer back surface and the support device. In the spin-drying stage, the liquid wetting the wafer back surface is easy to be sucked into the space near the support device by capillary effect when it flows radially away from the wafer, as shown in Figure 23 、 Figure 24 Although most areas of the front and back surfaces of the wafer can be spin-dried, the liquid near the contact between the wafer back surface and the support device and the space where the liquid is sucked in by capillary effect is difficult to be spin-dried. When the centrifugal spin-drying process ends and the wafer stops rotating, water droplets and water stains still remain near the contact between the wafer back surface and the support device, which is not allowed (normally, no water droplets and water stains can remain on the entire wafer back surface). For high-standard and high-process CMP equipment, the dryness and cleanliness of the wafer back surface are important indicators for evaluating the process. The remaining water droplets and water stains will seriously affect the completion quality and efficiency of the overall process of the CMP equipment. SUMMARY

[0006] In order to overcome the shortcomings of the prior art, the present application provides a wafer spin-drying mechanism. It solves the problem that water droplets and water stains are difficult to remove near the contact between the wafer back surface and the support surface during the centrifugal spin-drying process of the wafer.

[0007] The technical scheme adopted by the present application to solve the technical problem is: a wafer spin-drying mechanism, comprising,

[0008] a rotating platform;

[0009] a plurality of clamping jaws connected to the rotating platform and distributed circumferentially;

[0010] The clamping jaws have a support surface and a clamping surface on the side facing the wafer, or the clamping jaws and the rotating platform cooperate to form a support surface and a clamping surface, and the support surface and the clamping surface are used to clamp the wafer together.

[0011] The support surface and the clamping surface have a centrifugal liquid guide groove, and at least part of the centrifugal liquid guide groove is located below the height of the lower surface of the wafer when the support surface and the clamping surface clamp the wafer. When the wafer rotates, the liquid remaining on the wafer back surface enters the centrifugal liquid guide groove under the action of centrifugal force and is discharged outward by centrifugal force.

[0012] Further, there is a gap between the wafer back surface and the support surface, and part of the liquid remains in the gap due to capillary effect.

[0013] Further, at least part of the centrifugal liquid guide groove is parallel to the tangent direction of the wafer placed on the rotating platform.

[0014] Further, the centrifugal liquid guide groove is in the shape of a circular arc, and the circle fitted by the centrifugal liquid guide grooves of the plurality of claws is concentric with the wafer placed on the rotating platform.

[0015] Further, at least part of the centrifugal liquid guide groove is below the height of the lower surface of the wafer, which includes the state that the wafer is placed on the rotating platform, and also includes the state that the wafer and the rotating platform are rotated at a high speed.

[0016] Further, the centrifugal liquid guide groove is open at both ends.

[0017] Further, the wafer side surface has at least a lower rounded section and a straight section, and the centrifugal liquid guide groove has an opening, the width of which is less than or equal to the width of the lower rounded section.

[0018] Further, the wafer side surface has at least a lower rounded section and a straight section, and the clamping surface is in abutment with the straight section.

[0019] Further, the centrifugal liquid guide groove has an opening, the height of which is less than or equal to the height of the lower rounded section.

[0020] Further, the wafer side surface has an upper rounded section, and the claw is provided with a limiting surface for preventing the wafer from being separated upward, the limiting surface being located above the clamping surface and being in abutment with the upper rounded section.

[0021] Further, the center of the centrifugal liquid guide groove is below the highest height of the supporting surface.

[0022] Further, the inner wall of the centrifugal liquid guide groove is a circular arc surface.

[0023] Further, the supporting surface includes a horizontal placement surface and a climbing surface provided on the outer circumferential side of the horizontal placement surface, and the centrifugal liquid guide groove is located between the clamping surface and the climbing surface.

[0024] Further, the climbing surface is an arc-shaped climbing surface.

[0025] Further, the number of the rotating platforms is one, and the number of the claws is three or more, which are uniformly and spacedly arranged along the circumference of the rotating platform, when the rotating platform rotates, the upper part of the claw rotates inward and downward, and the supporting surface and the clamping surface jointly clamp the wafer.

[0026] Alternatively,

[0027] A plurality of rotating platforms are connected to a rotating base, and the claws are eccentrically connected to the rotating platforms, when the rotating platform rotates, the claw rotates with the rotating platform to approach the wafer.

[0028] The beneficial effects of the present application are: 1) during the centrifugal rotation process, the small gap between the back surface of the wafer and the support surface is prone to store liquid, which is difficult to be spun dry due to capillary effect and surface tension, resulting in water droplets and water stains remaining on the contact and vicinity of the back surface of the wafer and the support surface after drying, which are difficult to remove, the present application designs a centrifugal liquid guiding and draining groove to provide a guiding and draining space for the liquid flowing radially through the support surface and its vicinity to leave the wafer during the centrifugal rotation drying process, so that the residual liquid can be smoothly drained; 2) the centrifugal liquid guiding and draining groove can be parallel to the tangent direction of the wafer, so that the liquid accumulated in it can be quickly drained; 3) the design of the centrifugal liquid guiding and draining groove can simultaneously achieve the effect of draining water and air; 4) the setting of the centrifugal liquid guiding and draining groove will not affect the stable clamping of the wafer during the centrifugal rotation drying process - there is sufficient contact area between the clamping surface and the straight section of the wafer to provide sufficient friction to ensure that the wafer is clamped stably, and the support surface is in contact with the lower rounded section of the wafer to avoid scratches on the back surface of the wafer; 5) the ingenious structure design of the centrifugal liquid guiding and draining groove, which is designed to be at least partially below the height of the lower surface of the wafer, avoids the residual liquid from entering the centrifugal liquid guiding and draining groove and then splashing back to the back surface of the wafer in the opposite direction, avoiding the formation of water stains on the back surface of the wafer; 6) the limiting surface is in contact with the upper rounded section of the wafer, forming a limiting effect on the wafer to prevent it from coming off; 7) under the action of centrifugal force, the liquid remaining at the contact between the back surface of the wafer and the support surface can smoothly drain through the centrifugal liquid guiding and draining groove, thereby avoiding the formation of water stains, this improvement not only solves the major drawback of the original structure, but also does not require major changes to the original structure, and has high practicality and compatibility; 8) not only improves work efficiency and level, but also promotes the development of existing equipment to higher processes, and further improves the cleaning effect of the wafer back, providing more reliable protection for the high-process application of the CMP machine; 9) the centrifugal liquid guiding and draining groove structure can adapt to different structures of the clamping jaw and be suitable for the post-cleaning of different stages of semiconductor processes, and has high adaptability. BRIEF DESCRIPTION OF DRAWINGS

[0029] Figure 1 is a side view of the wafer in the present application.

[0030] Figure 2 is a perspective view of the first structure wafer rotation drying mechanism and the wafer in the present application.

[0031] Figure 3 is a partial perspective view of the first structure wafer rotation drying mechanism in the present application Figure 1 .

[0032] Figure 4 is an enlarged view of the structure at A in Figure 3 .

[0033] Figure 5 is a partial perspective view of the first structure wafer rotation drying mechanism in the present applicationFigure 2 .

[0034] Figure 6 is an enlarged view of the structure at B in Figure 5 .

[0035] Figure 7 is a schematic view of a portion of the structure of a chuck claw of a first structure wafer rotary drying mechanism in the present application.

[0036] Figure 8 is a partial schematic view of the wafer and the wafer rotary drying mechanism of the first structure in the present application.

[0037] Figure 9 is a schematic view of a portion of the structure of a centrifugal liquid discharge groove of a wafer rotary drying mechanism of the first structure in the present application.

[0038] Figure 10 is a perspective view of a wafer rotary drying mechanism of the second structure in the present application.

[0039] Figure 11 is an enlarged view of the structure at C in Figure 10 .

[0040] Figure 12 is a side view of a portion of the structure of a chuck claw of a wafer rotary drying mechanism of the second structure in the present application.

[0041] Figure 13 is a partial schematic view of the wafer and the wafer rotary drying mechanism of the second structure in the present application.

[0042] Figure 14 is a schematic view of a portion of the structure of a centrifugal liquid discharge groove of a wafer rotary drying mechanism of the second structure in the present application.

[0043] Figure 15 is a schematic view of a chuck claw and a rotary platform cooperation structure of a wafer rotary drying mechanism of the third structure in the present application.

[0044] Figure 16 is a side view of a chuck claw and a rotary platform cooperation structure of a wafer rotary drying mechanism of the third structure in the present application.

[0045] Figure 17 is a partial schematic view of the wafer and the wafer rotary drying mechanism of the third structure in the present application.

[0046] Figure 18 is a schematic view of a portion of the structure of a centrifugal liquid discharge groove of a wafer rotary drying mechanism of the third structure in the present application.

[0047] Figure 19 is a top view of a centrifugal liquid discharge groove and a wafer placed on a rotary platform in the present application. Figure 1 .

[0048] Figure 20 is an enlarged view of the structure at D in Figure 19

[0049] is a top view of the centrifugal liquid drainage groove and the wafer placed on the rotating platform of the present application Figure 21 Figure 2

[0050] Figure 22 is an enlarged view of the structure at E in Figure 21

[0051] Figure 23 is a partial schematic view of the wafer and the supporting device in the prior art

[0052] Figure 24 is an enlarged view of the structure at F in Figure 23

[0053] 1 - rotating platform, 2 - claw, 21 - limiting surface, 3 - wafer, 31 - lower rounded section, 32 - straight section, 33 - upper rounded section, 41 - supporting surface, 411 - horizontal placement surface, 412 - climbing surface, 42 - clamping surface, 5 - centrifugal liquid drainage groove, 51 - opening, 6 - space for liquid absorption due to capillary effect. DETAILED DESCRIPTION

[0054] In order for those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only some of the embodiments of the present application, not all. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor should fall within the scope of protection of the present application.

[0055] A wafer rotating drying mechanism, comprising one or more rotating platforms 1, and claws 2 connected to the rotating platforms 1, the number of claws 2 is multiple, and they are distributed at intervals in the circumferential direction, where the circumferential direction can be along the circumferential direction of the wafer 3, or along the circumferential direction of the rotating platform 1, and the specific limitation is not made. Specifically, one claw 2 can be arranged on one rotating platform 1, at this time, the number of claws 2 and the number of rotating platforms 1 are both multiple, and the multiple rotating platforms 1 are connected to the same rotating base (not shown in the figure); or multiple claws 2 can be arranged on one rotating platform 1, at this time, the number of claws 2 is multiple, and the number of rotating platforms 1 is one.

[0056] ​​​​The chuck 2 has a supporting surface 41 and a clamping surface 42 on the side facing the wafer 3, or in other words, the chuck 2 and the rotating platform 1 cooperate to form the supporting surface 41 and the clamping surface 42, which are used to jointly clamp the wafer 3.

[0057] The supporting surface 41 and the clamping surface 42 have a centrifugal liquid guiding groove 5 therebetween, at least part of which is below the height of the lower surface of the wafer 3 when the supporting surface 41 and the clamping surface 42 clamp the wafer 3, i.e. during the centrifugal rotation drying process, so that the liquid that has flowed radially through the supporting device and its vicinity during the centrifugal rotation drying process can be smoothly discharged through the centrifugal liquid guiding groove 5, and in particular, the liquid cannot accumulate in the narrow gap between the back surface of the wafer 3 and the supporting surface 41, and the liquid on the back surface of the wafer 3 can be discharged through the centrifugal liquid guiding groove 5, i.e. the liquid absorbed between the back surface of the wafer 3 and the supporting surface 41 due to the capillary effect is discharged through the centrifugal liquid guiding groove 5 under the action of the centrifugal force, thereby avoiding the formation of water stains on the surface of the wafer 3. Of course, the centrifugal liquid guiding groove 5 not only has the effect of draining water, but also has the effect of draining air, effectively reducing the surface tension of the liquid, and thereby facilitating the discharge of the liquid through the centrifugal liquid guiding groove 5.

[0058] In this embodiment, the centrifugal liquid guiding groove 5 is open at both ends, so that when the rotating platform 1 and the chuck 2 with the wafer 3 rotate, the liquid remaining on the back surface of the wafer 3 enters the centrifugal liquid guiding groove 5 under the action of the centrifugal force, and the liquid in the centrifugal liquid guiding groove 5 is directly discharged outward through the open ends under the action of the centrifugal force, effectively avoiding the backflow of the liquid to the back surface of the wafer 3, and the drying effect is better.

[0059] As shown in Figure 19 , Figure 20 , at least part of the centrifugal liquid guiding groove 5 is parallel to the tangential direction of the wafer 3 placed on the rotating platform 1, and under the action of the centrifugal force, the direction in which the liquid is thrown off the wafer 3 is approximately the tangential direction of the wafer, and the centrifugal liquid guiding groove 5 is designed to be parallel to the tangential direction of the wafer, so that the liquid thrown off the surface of the wafer 3 can be more quickly discharged to the two open ends of the centrifugal liquid guiding groove 5.

[0060] As shown in Figure 21 , Figure 22 , the centrifugal liquid guiding groove 5 can also be in the shape of a circular arc, and the circle in which the centrifugal liquid guiding grooves 5 of the plurality of chucks 2 fit is concentric with the wafer 3 placed on the rotating platform 1, or in other words, the centrifugal liquid guiding groove 5 is parallel to the outer periphery of the wafer 3.

[0061] Since the length of the centrifugal liquid guiding groove 5 is very small compared to the outer circumference of the wafer 3, and the central angle of the circular arc shape of the centrifugal liquid guiding groove 5 is also relatively small, it will not cause the liquid thrown out of the centrifugal liquid guiding groove 5 to fall back onto the surface of the wafer 3.

[0062] As shown in Figures 2-9As shown, the number of rotating platforms 1 is one, and the number of claws 2 is three, which are evenly spaced and connected to the rotating platform 1. Of course, the number of claws 2 can be more than three. The support surface 41 is provided on the rotating platform 1, which is a self-inclined surface structure (for example, the support surface 41 is inclined from bottom to top and from inside to outside, and the inside refers to the inner side of the center of the wafer 3) Figure 8 As shown, the direction is an example, and the inside refers to the inner side of the center of the wafer 3), and the clamping surface 42 is provided on the claw 2.

[0063] When the rotating platform 1 rotates, the upper part of the claw 2 rotates inward and downward under the action of the centrifugal force, and the support surface 41 and the clamping surface 42 jointly clamp the wafer 3. At this time, the centrifugal liquid guide groove 5 is formed by the cooperation of the claw 2 and the rotating platform 1, that is, part of the centrifugal liquid guide groove 5 is located in the claw 2, and part of the centrifugal liquid guide groove 5 is located in the rotating platform 1.

[0064] As shown in Figure 1 , Figure 9 The wafer 3 has a lower rounded section 31, a straight section 32, and an upper rounded section 33. The clamping surface 42 abuts against the straight section 32. In other words, in this embodiment, the clamping surface 42 is a vertical plane, or at least in the state of clamping the wafer 3, the clamping surface 42 is a plane in a vertical state.

[0065] As shown in Figure 9 , the centrifugal liquid guide groove 5 has an opening 51, and the width of the opening 51 is less than or equal to the width of the lower rounded section 31. Here, the width of the opening 51 is L1, which specifically refers to the width of the opening 51 of the centrifugal liquid guide groove 5 in the state of clamping the wafer 3, which is formed by the combination of the circular arc groove formed by the claw 2 below the clamping surface 42 and the circular arc groove formed by the support surface 41 of the rotating platform 1. The width of the lower rounded section 31 refers to the horizontal distance between the two endpoints of the lower rounded section 31, that is, L2 in Figure 1 , and L1≤L2, so as to ensure that the wafer 3 is placed flat on the support surface 41 and clamped by the support surface 41 and the clamping surface 42, and the support surface 41 is always in contact with the lower rounded section 31 of the wafer 3, and the straight part of the back of the wafer 3 is as little as possible to contact the support surface 41, so as to avoid scratches on the back of the wafer 3.

[0066] The height of the opening 51 of the centrifugal liquid guide groove 5 is less than or equal to the height of the lower rounded section 31, and the height of the lower rounded section 31 refers to the vertical distance between the two endpoints of the lower rounded section 31, that is, S in Figure 1 . The height of the opening 51 of the centrifugal liquid guide groove 5 is H in Figure 9 , and H≤S, so as to ensure that the clamping surface 42 can abut against the straight section 32 of the wafer 3 as much as possible when clamping the wafer 3, and to ensure that there is sufficient contact area between the clamping surface 42 and the wafer 3 to provide sufficient friction to ensure that the wafer 3 is clamped stably and avoids flying out.

[0067] To prevent wafer 3 from detaching upwards during high-speed rotation, such as Figure 9 As shown, the chuck 2 is provided with a limiting surface 21 to prevent the wafer 3 from detaching upward. The limiting surface 21 is located above the clamping surface 42 and extends obliquely from top to bottom and from inside to outside. Thus, when the wafer 3 is clamped, the limiting surface 21 can abut against the upper rounded corner segment 33, thereby the limiting surface 21 forms a downward and inward force on the wafer 3.

[0068] The center of the centrifugal drain tank 5 is located below the height of the support surface 41, specifically referring to the maximum height of the support surface 41. This ensures that the liquid ejected from the rotating dryer of wafer 3 will not flow back to wafer 3, or in other words, as little liquid as possible will splash back onto the back of wafer 3.

[0069] As described above, the centrifugal drain tank 5 is formed by the combination of the support surface 41 and the arc groove of the claw 2, thus the inner wall of the centrifugal drain tank 5 is an arc surface. Combining the arc shape of the centrifugal drain tank 5 and the fact that its center is located below the height of the support surface 41, it can prevent residual liquid from splashing back onto the back side of the wafer 3 after entering the centrifugal drain tank 5. Water droplets enter from the opening 51 of the centrifugal drain tank 5, hit the inner wall of the arc surface of the centrifugal drain tank 5, and bounce. After bouncing, most water droplets entering from any angle of the opening 51 of the centrifugal drain tank 5 will move towards the center of the centrifugal drain tank 5. Since the center of the centrifugal drain tank 5 is located below the back side of the wafer 3, it can effectively guide the liquid entering the centrifugal drain tank 5 to a position below the back side of the wafer 3, thereby preventing it from splashing back onto the back side of the wafer 3 and preventing water stains from forming on the back side of the wafer 3. Of course, in other embodiments, the specific shape of the centrifugal drain tank 5 is not limited.

[0070] Unlike the structure formed by the aforementioned jaw 2 and rotating platform 1 to create a support surface 41 and a clamping surface 42, such as... Figures 10-14 As shown, its support surface 41 and clamping surface 42 are both provided on the claw 2, and the centrifugal drain trough 5 is opened on the claw 2 and is located between the support surface 41 and the clamping surface 42.

[0071] At this point, the centrifugal drain tank 5 is not formed by assembling two parts; it has a fixed shape. However, when the chuck 2 is not clamping the wafer 3, the opening 51 of the centrifugal drain tank 5 faces upwards. When the chuck 2 is clamping the wafer 3, the opening 51 of the centrifugal drain tank 5 faces the lower rounded corner 31 of the wafer 3. The width and height of the opening 51 of the centrifugal drain tank 5, and the center of the centrifugal drain tank 5, are the same as those of the wafer rotary drying mechanism in the first structure, and will not be described further.

[0072] like Figure 11As shown, the support surface 41 includes a horizontal placement surface 411, namely a climbing surface 412 disposed on the outer periphery of the horizontal placement surface 411. The centrifugal drain tank 5 is located between the clamping surface 42 and the climbing surface 412, and the climbing surface 412 is an arc-shaped climbing surface. The wafer 3 is first placed on the horizontal placement surface 411. After the rotating platform 1 rotates, under the action of centrifugal force, the upper part of the chuck 2 rotates inward and downward, and the wafer 3 moves along the climbing surface 412. Finally, the climbing surface 412 and the clamping surface 42 jointly clamp the wafer 3.

[0073] The center of the centrifugal drain tank 5 is located below the highest height of the climbing surface 412. In other words, the center of the arc-shaped centrifugal drain tank 5 is located at the outer and lower side of the wafer.

[0074] The other structures of the second type of wafer rotary drying mechanism are the same as those of the first type, and will not be described again.

[0075] like Figures 15-18 As shown, in the third type of wafer rotary drying mechanism, the lower cylindrical body with a larger outer diameter is the rotary platform 1, and the upper eccentrically connected structure is the chuck 2. The rotary base (not shown in the figure) connects multiple rotary platforms 1 into one unit. The rotary platform 1 can rotate relative to the rotary base. The rotary base drives multiple rotary platforms 1, multiple chucks 2 and wafer 3 to rotate at high speed together, so as to realize the centrifugal rotary drying of wafer 3.

[0076] The wafer 3 is first placed on the support surface 41 of the chuck 2. In this embodiment, the support surface 41 is a sloping structure that slopes from bottom to top and from inside to outside (i.e., ...). Figure 16 Taking the direction shown as an example (where "inside" refers to the inner side where the center of wafer 3 is located), wafer 3 is not in contact with clamping surface 42 at this time. Then, the chuck 2 rotates relative to the rotating base with the rotating platform 1, so that the chuck 2 moves closer to wafer 3, making clamping surface 42 contact the straight section 32 of wafer 3, thus realizing the clamping of wafer 3 by support surface 41 and clamping surface 42.

[0077] The other structures of this third type of wafer rotary drying mechanism are the same as those of the second type mentioned above, and will not be described again.

[0078] The aforementioned wafer rotary drying mechanism can be applied to the photolithography process, the ion implantation process, the CMP process, the etching process, the grinding process, or the packaging process in wafer manufacturing, without any specific limitations.

[0079] The above specific embodiments are used to explain and illustrate the present invention, but not to limit the present invention. Any modifications and changes made to the present invention within the spirit and scope of the claims shall fall within the protection scope of the present invention.

Claims

1. A wafer rotary drying mechanism, comprising, a rotary platform (1); claws (2) connected to the rotary platform (1), the number of which is multiple, and which are distributed circumferentially at intervals; the claw (2) has a supporting surface (41) and a clamping surface (42) on the side facing the wafer (3), or the claw (2) and the rotary platform (1) cooperate to form the supporting surface (41) and the clamping surface (42), which are used to clamp the wafer (3) together; characterized in that the supporting surface (41) and the clamping surface (42) have a centrifugal liquid guide groove (5) therebetween, at least part of which is below the height of the lower surface of the wafer (3) when the supporting surface (41) and the clamping surface (42) clamp the wafer (3), and when the wafer (3) rotates, the liquid remaining on the back of the wafer (3) enters the centrifugal liquid guide groove (5) under the action of centrifugal force and is discharged outward by centrifugal force; the length extension direction of the centrifugal liquid guide groove (5) is parallel to the tangent direction of the wafer (3) placed on the rotary platform (1); or the length extension direction of the centrifugal liquid guide groove (5) is parallel to the outer edge of the wafer (3) placed on the rotary platform (1); the centrifugal liquid guide groove (5) is open on the side facing the wafer (3), and both ends of the length extension direction thereof are open, and when the rotary platform (1) and the claw (2) with the wafer (3) rotate, the liquid remaining on the back of the wafer (3) enters the centrifugal liquid guide groove (5) under the action of centrifugal force, and the liquid in the centrifugal liquid guide groove (5) is directly discharged outward through the open ends under the action of centrifugal force; the wafer (3) has at least a lower rounded section (31) and a flat section (32) on the side, the clamping surface (42) abuts against the flat section (32), and the centrifugal liquid guide groove (5) has an opening (51) with a height less than or equal to that of the lower rounded section (31).

2. The wafer spin-drying mechanism according to claim 1, characterized by: There is a gap between the back of the wafer (3) and the supporting surface (41), and part of the liquid remains in the gap due to capillary effect.

3. The wafer spin-drying mechanism according to claim 1, wherein: The centrifugal liquid guide groove (5) is in the shape of a circular arc, and the circles fitted by the centrifugal liquid guide grooves (5) of the multiple claws (2) are concentric with the wafer (3) placed on the rotary platform (1).

4. The wafer spin-drying mechanism according to claim 1, wherein: At least part of the centrifugal liquid guide groove (5) is below the height of the lower surface of the wafer (3), which includes the state that the wafer (3) is stationary on the rotary platform (1), and also includes the state that the wafer (3) and the rotary platform (1) rotate at high speed.

5. The wafer spin-drying mechanism according to claim 1, wherein: The wafer (3) has at least a lower rounded section (31) and a flat section (32) on the side, and the centrifugal liquid guide groove (5) has an opening (51) with a width less than or equal to that of the lower rounded section (31).

6. The wafer spin-drying mechanism according to claim 1, wherein: The wafer (3) has an upper rounded section (33) on the side; the claw (2) is provided with a limiting surface (21) for preventing the wafer (3) from being separated upward, which is located above the clamping surface (42) and can abut against the upper rounded section (33).

7. The wafer spin-drying mechanism according to claim 1, wherein: The center of the centrifugal liquid guide groove (5) is below the highest height of the supporting surface (41).

8. The wafer spin-drying mechanism according to claim 1 or 7, characterized by: The inner wall of the centrifugal liquid guide groove (5) is a circular arc surface.

9. The wafer spin-drying mechanism according to claim 1, wherein: The support surface (41) comprises a horizontal placement surface (411) and a climbing surface (412) arranged at the outer circumferential side of the horizontal placement surface (411), and the centrifugal liquid guide groove (5) is located between the support surface (41) and the climbing surface (412).

10. The wafer spin-drying mechanism according to claim 9, wherein: The climbing surface (412) is an arc-shaped climbing surface.

11. The wafer rotary drying mechanism according to claim 1, wherein: the number of the rotary platforms (1) is one, and the number of the claws (2) is three or more than three, which are uniformly and circumferentially arranged, and when the rotary platform (1) rotates, the upper part of the claw (2) rotates inward and downward, and the support surface (41) and the clamping surface (42) jointly clamp the wafer (3). Alternatively, a plurality of rotary platforms (1) are connected to a rotary base, and the claws (2) are eccentrically connected to the rotary platforms (1), and when the rotary platforms (1) rotate, the claws (2) rotate with the rotary platforms (1) to approach the wafer (3). ​

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