Sealing performance detection method and device for semiconductor manufacturing equipment

Abstract

The invention provides a sealing performance detection method and device for semiconductor manufacturing equipment, and particularly relates to the technical field of semiconductor manufacturing, and the method comprises the steps: obtaining the light intensity change information of target gas in a reaction chamber in a preset process of semiconductor processing, the target gas is a functional gas adopted in a preset process, the light intensity change information is related to the content of the target gas, and the first temperature information is used for indicating the temperature of a target detection position on the vacuumizing gas path; the target detection position is located outside the reaction chamber and is located in a heat convection area of the reaction chamber; if it is determined that the light intensity change information indicates at least one of the condition that the quantitative change of the target gas in the preset process meets the leakage quantitative change condition and the condition that the first temperature information meets the leakage temperature condition, alarm information indicating leakage of the reaction chamber is generated. According to the invention, the real-time performance, the accuracy and the stability of the sealing performance detection can be obviously improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a sealing detection method and device for semiconductor manufacturing equipment. Background Art

[0002] Semiconductor manufacturing is a highly precise process that places extremely strict demands on the environmental control of manufacturing equipment, especially the sealing of the reaction chamber. For example, the etching chamber of the etching equipment in the manufacturing process is the core component of the overall process and needs to be operated in a vacuum or a specific atmosphere. The sealing of the chamber directly affects the quality and efficiency of the etching process. If there are leakage problems such as damaged vacuum valves in the chamber, the chamber will not be able to meet the environmental stability requirements of the process, thereby affecting the uniformity and accuracy of the etching. Therefore, chamber leakage rate monitoring of semiconductor manufacturing equipment is an essential operation and maintenance detection step.

[0003] In order to monitor the leakage rate of the machine, the existing process usually requires the manufacturing equipment to be offline and the corresponding production line transmission to be stopped, so as to regularly use the machine's built-in program to perform manual leakage rate checks to eliminate the risk of chamber leakage. If the vacuum valve or other seals are damaged during the process operation, causing the reaction chamber to leak, the machine cannot automatically alarm and can only be discovered when the machine is down or a large number of defects occur, resulting in high cost and poor timeliness of chamber sealing detection. Summary of the invention

[0004] The present application provides a sealing detection solution for semiconductor manufacturing equipment, which specifically includes the following contents.

[0005] On the one hand, the present application provides a sealing detection method for semiconductor manufacturing equipment, wherein the semiconductor manufacturing equipment includes a reaction chamber and a vacuum air path that can be connected and disconnected to the reaction chamber, and the method includes:

[0006] Obtaining at least one of light intensity change information of a target gas in the reaction chamber in a preset process of semiconductor processing and first temperature information corresponding to the vacuum air path in a closed state of the reaction chamber, wherein the target gas is a functional gas used in the preset process, the light intensity change information is related to the content of the target gas, and the first temperature information is used to indicate the temperature of a target detection position on the vacuum air path, wherein the target detection position is located outside the reaction chamber and in a thermal convection region of the reaction chamber;

[0007] If it is determined that the light intensity change information indicates that the quantity change of the target gas in the preset process satisfies at least one of a leakage quantity change condition and the first temperature information satisfies a leakage temperature condition, alarm information indicating leakage of the reaction chamber is generated.

[0008] In an exemplary implementation, the preset process includes a first sub-process, an idle interval step, and a second sub-process arranged in sequence, the process conditions of the first sub-process and the second sub-process are consistent, the semiconductor device is in a non-working state and the reaction chamber is sealed in the idle interval step; the obtaining of the light intensity change information of the target gas in the reaction chamber in the preset process of semiconductor processing includes:

[0009] Acquire first light intensity information of the first sub-process and second light intensity information of the second sub-process;

[0010] The light intensity variation information is generated based on the difference between the first light intensity information and the second light intensity information, and the light intensity variation information is used to indicate the light intensity difference between the first sub-process and the second sub-process.

[0011] In an exemplary embodiment, the method further includes:

[0012] If the difference between the light intensity difference corresponding to the light intensity change information and the reference light intensity difference exceeds a first preset difference, it is determined that the quantitative change of the target gas in the preset process meets the leakage quantitative change condition, and the reference light intensity difference represents the difference between the first light intensity information and the second light intensity information collected under normal operating conditions of the chamber when there is no leakage in the chamber.

[0013] In an example implementation, the light intensity difference corresponding to the light intensity change information is the difference between a first light intensity mean and a second light intensity mean, wherein the first light intensity mean is obtained by mean calculation based on the first light intensity information, and the second light intensity mean is obtained by mean calculation based on the second light intensity information.

[0014] In an exemplary implementation, the preset process is a chamber cleaning process, the first sub-process and the second sub-process are respectively used for cleaning the reaction chamber, and the target gas is a functional gas for cleaning the reaction chamber.

[0015] In an exemplary implementation, the first temperature information is obtained when the temperature of the reaction chamber is higher than the ambient temperature; if the first temperature information indicates that the temperature drop rate of the target detection position does not satisfy a natural cooling state, it is determined that the leakage temperature condition is satisfied.

[0016] In an exemplary implementation, before generating alarm information indicating leakage of the reaction chamber, the method further includes:

[0017] Determine a temperature average of the target detection position within a preset time based on the first temperature information;

[0018] Determine a temperature difference between the temperature average and a reference temperature average, wherein the reference temperature average is determined based on reference temperature information of the target detection position being naturally cooled within a preset time when the reaction chamber is in a non-leaking state;

[0019] If the temperature difference exceeds a second preset difference, it is determined that the temperature drop rate of the target detection position does not satisfy the natural cooling state; the natural cooling state refers to the state in which the target detection position is naturally cooled at the ambient temperature when the vacuum air circuit is not connected to the reaction chamber and the vacuum valve assembly is not leaking.

[0020] In an exemplary embodiment, the reaction chamber and the vacuum air path can be connected and disconnected through a vacuum valve assembly, and the vacuum valve assembly is located between the reaction chamber and the target detection position, and the light intensity change information of the target gas in the reaction chamber in the preset process of semiconductor processing is obtained, and at least one of the first temperature information corresponding to the vacuum air path in the closed state of the reaction chamber includes:

[0021] Acquire the light intensity change information, and / or, when the reaction chamber and the vacuum valve are both in a constant temperature setting state, acquire first temperature information of the target detection position in a closed state of the reaction chamber, second temperature information of the reaction chamber, and third temperature information of the vacuum valve assembly;

[0022] Before generating the alarm information indicating the leakage of the reaction chamber, the method further includes:

[0023] If the second temperature information and the third temperature information both satisfy a constant temperature state, and the first temperature information satisfies a leakage temperature condition, the step of generating alarm information indicating leakage of the reaction chamber is performed.

[0024] In an exemplary implementation, the first temperature information is obtained after determining that the light intensity change information indicates that the quantitative change of the target gas in the preset process satisfies the leakage quantitative change condition;

[0025] When the leakage quantity change condition is met and the first temperature information indicates that the leakage temperature condition is met, alarm information indicating leakage of the reaction chamber is generated.

[0026] In an exemplary implementation, the first temperature information of the reaction chamber in a sealed state is acquired during the idle interval step.

[0027] On the other hand, the present application provides a sealing detection device for semiconductor manufacturing equipment, wherein the semiconductor manufacturing equipment includes a reaction chamber and a vacuum air path that can be connected and disconnected to the reaction chamber, and the device includes:

[0028] An acquisition module: used to acquire at least one of light intensity change information of a target gas in the reaction chamber in a preset process of semiconductor processing, and first temperature information corresponding to the vacuum air path in a closed state of the reaction chamber, wherein the target gas is a functional gas used in the preset process, the light intensity change information is related to the content of the target gas, and the first temperature information is used to indicate the temperature of a target detection position on the vacuum air path, wherein the target detection position is located outside the reaction chamber and in a thermal convection region of the reaction chamber;

[0029] Alarm module: for generating alarm information indicating leakage of the reaction chamber if it is determined that the light intensity change information indicates that the quantitative change of the target gas in the preset process satisfies at least one of a leakage quantitative change condition and the first temperature information satisfies a leakage temperature condition.

[0030] In an exemplary implementation, the preset process includes a first sub-process, an idle interval step, and a second sub-process arranged in sequence, the process conditions of the first sub-process and the second sub-process are consistent, the semiconductor device is in a non-working state and the reaction chamber is sealed in the idle interval step; the acquisition module is specifically used to:

[0031] Acquire first light intensity information of the first sub-process and second light intensity information of the second sub-process;

[0032] The light intensity variation information is generated based on the difference between the first light intensity information and the second light intensity information, and the light intensity variation information is used to indicate the light intensity difference between the first sub-process and the second sub-process.

[0033] In an exemplary implementation, the device further includes a condition determination module, which is used to:

[0034] If the difference between the light intensity difference corresponding to the light intensity change information and the reference light intensity difference exceeds a first preset difference, it is determined that the quantitative change of the target gas in the preset process meets the leakage quantitative change condition, and the reference light intensity difference represents the difference between the first light intensity information and the second light intensity information collected under normal operating conditions of the chamber when there is no leakage in the chamber.

[0035] In an example implementation, the light intensity difference corresponding to the light intensity change information is the difference between a first light intensity mean and a second light intensity mean, wherein the first light intensity mean is obtained by mean calculation based on the first light intensity information, and the second light intensity mean is obtained by mean calculation based on the second light intensity information.

[0036] In an exemplary implementation, the preset process is a chamber cleaning process, the first sub-process and the second sub-process are respectively used for cleaning the reaction chamber, and the target gas is a functional gas for cleaning the reaction chamber.

[0037] In an exemplary embodiment, the first temperature information is obtained when the temperature of the reaction chamber is higher than the ambient temperature; the condition judgment module is used to: if the first temperature information indicates that the temperature drop rate of the target detection position does not satisfy the natural cooling state, determine that the leakage temperature condition is satisfied, and the natural cooling state refers to the state in which the target detection position is naturally cooled at the ambient temperature when the vacuum air circuit is not connected to the reaction chamber and the vacuum valve assembly is not leaking.

[0038] In an exemplary implementation, the device further includes a temperature drop information acquisition module, which is used to:

[0039] Before generating the alarm information indicating the leakage of the reaction chamber, determining a temperature average of the target detection position within a preset time based on the first temperature information;

[0040] Determine a temperature difference between the temperature average and a reference temperature average, wherein the reference temperature average is determined based on reference temperature information of the target detection position being naturally cooled within a preset time when the reaction chamber is in a non-leaking state;

[0041] If the temperature difference exceeds a second preset difference, it is determined that the temperature drop rate of the target detection position does not satisfy the natural temperature drop state.

[0042] In an exemplary embodiment, the reaction chamber and the vacuum air path can be connected and disconnected through a vacuum valve assembly, and the vacuum valve assembly is located between the reaction chamber and the target detection position, and the acquisition module is specifically used for:

[0043] Acquire the light intensity change information, and / or, when the reaction chamber and the vacuum valve are both in a constant temperature setting state, acquire first temperature information of the target detection position in a closed state of the reaction chamber, second temperature information of the reaction chamber, and third temperature information of the vacuum valve assembly;

[0044] The alarm module is specifically used for: before generating the alarm information indicating the leakage of the reaction chamber, if the second temperature information and the third temperature information both satisfy the constant temperature state and the first temperature information satisfies the leakage temperature condition, executing the step of generating the alarm information indicating the leakage of the reaction chamber.

[0045] In an exemplary implementation, the first temperature information is obtained after determining that the light intensity change information indicates that the quantitative change of the target gas in the preset process satisfies the leakage quantitative change condition;

[0046] The alarm module is specifically configured to generate alarm information indicating leakage of the reaction chamber when the leakage quantity change condition is met and the first temperature information indicates that the leakage temperature condition is met.

[0047] In an exemplary implementation, the first temperature information of the reaction chamber in a sealed state is acquired during the idle interval step.

[0048] On the other hand, a computer device is provided, which includes a processor and a memory, wherein the memory stores at least one instruction or at least one program, and the at least one instruction or the at least one program is loaded and executed by the processor to implement the sealing detection method for semiconductor manufacturing equipment as described above.

[0049] On the other hand, a computer-readable storage medium is provided, in which at least one instruction or at least one program is stored. The at least one instruction or the at least one program is loaded and executed by a processor to implement the sealing detection method for semiconductor manufacturing equipment as described above.

[0050] On the other hand, a server is provided, which includes a processor and a memory, wherein the memory stores at least one instruction or at least one program, and the at least one instruction or the at least one program is loaded and executed by the processor to implement the sealing detection method for semiconductor manufacturing equipment as described above.

[0051] On the other hand, a terminal is provided, which includes a processor and a memory, wherein the memory stores at least one instruction or at least one program, and the at least one instruction or the at least one program is loaded and executed by the processor to implement the sealing detection method for semiconductor manufacturing equipment as described above.

[0052] On the other hand, a computer program product is provided. The computer program product includes computer instructions. When the computer instructions are executed by a processor, the sealing detection method for semiconductor manufacturing equipment as described above is implemented.

[0053] The sealing detection method, device, equipment, storage medium, server, terminal, and computer program product for semiconductor manufacturing equipment provided by the present application have the following technical effects:

[0054] The technical solution of the present application detects the light intensity change information of the target gas in the preset process to characterize the change amount of the target gas, and detects the first temperature information of the target detection position on the vacuum gas path outside the reaction chamber in the closed state of the reaction chamber, and then judges the chamber airtightness in the semiconductor processing process through the gas quantity change indicated by the light intensity change and the change of the temperature of the detection position indicated by the first temperature information. It can timely detect whether there is a chamber leak without taking the machine offline and terminating the process, avoiding affecting the service time of the machine, and realizing automatic monitoring of the chamber airtightness, which can significantly improve the real-time, accuracy and stability of the airtightness detection, reduce the process defects caused by vacuum valve leakage, etc., and improve the yield rate of semiconductor devices. At the same time, the solution has a high level of automation, significantly reduces the demand for manual operation, and improves production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0055] In order to more clearly illustrate the technical solutions and advantages in the embodiments of the present application or the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0056] Figure 1 It is a flow chart of a leak rate detection method in the prior art;

[0057] Figure 2 It is a flow chart of a sealing detection method for semiconductor manufacturing equipment provided in an embodiment of the present application;

[0058] Figure 3 This is a schematic flow chart of a method for light intensity detection provided in an embodiment of the present application;

[0059] Figure 4 is a graph of a set of first light intensity information and second light intensity information provided by an embodiment of the present application;

[0060] Figure 5 is a set of light intensity curves of the first sub-process and the second sub-process obtained under normal working conditions provided by an embodiment of the present application;

[0061] Figure 6 This is a schematic diagram of a temperature detection method provided in an embodiment of the present application;

[0062] Figure 7 is a graph of a set of first temperature information, second temperature information, third temperature information and reference temperature information provided by an embodiment of the present application;

[0063] Figure 8It is a flow chart of another sealing detection method for semiconductor manufacturing equipment provided in an embodiment of the present application;

[0064] Fig. 9 It is a partial structural schematic diagram of a semiconductor manufacturing equipment provided by an embodiment of the present application;

[0065] Fig.10 It is a schematic diagram of a framework of a sealing detection device for semiconductor manufacturing equipment provided in an embodiment of the present application;

[0066] Fig.11 It is a hardware structure block diagram of an electronic device for a sealing detection method of semiconductor manufacturing equipment provided in an embodiment of the present application;

[0067] Figure numerals: 1-reaction chamber, 11-first detection position, 2-vacuum valve assembly, 21-second detection position, 3-vacuum air circuit, 31-target detection position, 4-elevated floor, 5-waffle hole, 6-vacuum pump, 7-subsidiary floor. DETAILED DESCRIPTION

[0068] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0069] It should be noted that in the description of the present application, for the following defined terms, unless a different definition is given in the claims or elsewhere in this specification, these definitions should be applied. All numerical values, whether or not explicitly indicated, are defined herein as being modified by the term "about". The term "about" generally refers to a numerical range that a person of ordinary skill in the art would consider to be equivalent to the stated value to produce substantially the same properties, functions, results, etc. A numerical range indicated by a low value and a high value is defined to include all numerical values ​​included in the numerical range and all subranges included in the numerical range.

[0070] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or server comprising a series of steps or submodules is not necessarily limited to those steps or submodules clearly listed, but may include other steps or submodules that are not clearly listed or inherent to these processes, methods, products or devices.

[0071] In the embodiments of the present application, the terminal may include physical devices such as a controller, a smart phone, a desktop computer, a tablet computer, a laptop computer, a digital assistant, an augmented reality (AR) / virtual reality (VR) device, an intelligent voice interaction device, and a smart wearable device, and may also include software running in the physical device, such as an application program, etc.; the machine may be any machine used for processing devices in the processing process of semiconductor devices.

[0072] In the embodiments of the present application, the server may be an independent physical server, or a server cluster or distributed system composed of multiple physical servers, or a cloud server that provides basic cloud computing services such as cloud services, cloud databases, cloud computing, cloud functions, cloud storage, network services, cloud communications, middleware services, domain name services, security services, CDN (Content Delivery Network), and big data and artificial intelligence platforms. Specifically, the server involved above may include physical devices, which may specifically include network communication submodules, processors and memories, etc., and may also include software running in physical devices, which may specifically include applications, etc.

[0073] The sealing performance of the reaction chamber is generally calibrated using the "leak rate". The larger the leak rate, the worse the sealing of the chamber. In the prior art, the machine's built-in program is usually used to perform manual leak rate checks to determine whether there is a chamber leak. For example, for semiconductor dry etching machines, the reaction chamber is required to reach a vacuum condition of the order of 10 mTorr or less during the etching process, so there are higher requirements for the sealing performance of the reaction chamber. The reaction chamber is sealed with seals such as polymer rubber sealing rings, which theoretically cannot be completely sealed. If the leak rate is detected as 0, it not only cannot prove that there is no chamber leakage, but it indicates that there is a chamber leakage. For example, if the pump group seal is damaged, the chamber pressure is still decreasing after the valve connecting the reaction chamber is closed, that is, there is a vacuum swing valve leakage and other problems. Therefore, the "leak rate" has become one of the key parameters for measuring the reaction chamber of the dry etching machine. Reference Figure 1 The existing leak rate detection process is usually: evacuate the reaction chamber to low pressure → close the reaction chamber → start timing → end timing → determine the rise value of the chamber pressure during the timing period, calculate the chamber leak rate, and if the leak rate is 0, it is judged as a leak. However, the existing leak rate inspection can only be performed when the machine is stopped and offline, and the leak detection data can only show whether the sealing is normal, but cannot locate whether there is a leak in the vacuum valve.

[0074] The vacuum valve assembly is a valve assembly installed between the reaction chamber and the vacuum air circuit. It is equipped with a sealing ring to achieve sealing and shutoff. However, the sealing ring is a consumable part and is prone to aging and breaking. In order to avoid the above risks, the existing process adopts better quality sealing rings, shortens the replacement cycle of sealing rings, or increases the number of leakage rate detections to reduce the leakage probability of the vacuum valve assembly, but the above methods will increase the equipment cost and operation and maintenance time cost.

[0075] In order to solve at least one of the above problems, the present application provides a sealing detection method for semiconductor manufacturing equipment. The embodiments of the present application can be applied to semiconductor manufacturing scenarios, such as the detection of equipment with a reaction chamber in the semiconductor device processing process to achieve the monitoring of the sealing of the equipment. Please refer to Figure 2 , Figure 2 It is a flow chart of a sealing detection method for semiconductor manufacturing equipment provided by an embodiment of the present application. This specification provides method operation steps such as the embodiment or flow chart, but more or fewer operation steps may be included based on conventional or non-creative labor. The order of steps listed in the embodiment is only one way of executing the order of many steps and does not represent the only execution order. When the actual system or server product is executed, it can be executed in the order of the method shown in the embodiment or the figure or in parallel (for example, in a parallel processor or multi-threaded processing environment).

[0076] Specifically, the method is applied to a semiconductor manufacturing device, which includes a reaction chamber and a vacuum exhaust air circuit that is connected to the reaction chamber in a switchable manner, such as Figure 2 As shown, the method may include the following steps S201-S203:

[0077] S201: obtaining at least one of light intensity change information of a target gas in a reaction chamber in a preset process of semiconductor processing and first temperature information corresponding to a vacuum air path in a closed state of the reaction chamber;

[0078] S203: If it is determined that the light intensity change information indicates that the quantitative change of the target gas in the preset process satisfies at least one of the leakage quantitative change condition and the first temperature information satisfies the leakage temperature condition, alarm information indicating leakage of the reaction chamber is generated.

[0079] Specifically, the target gas is a functional gas used in a preset process, such as a gas used to generate plasma in a plasma cleaning process, or an etching gas used in an etching process, etc. The light intensity change information is related to the content of the target gas. The light intensity change information is used to indicate the difference in light intensity before and after the preset process. The light intensity is determined based on the light intensity signal obtained by the element light intensity detection of the target gas, and the intensity of the light intensity signal is positively correlated with the content of the target gas. The type of target gas is determined based on the preset process. For example, the target gas in the Si process can be (Coating Gas) SiCl4. Accordingly, the intensity of the light intensity signal of the Cl element is monitored by light intensity detection. The target gas in the dielectric process is C4F8, and the intensity of the light intensity signal of the F element is monitored to confirm the leakage of the cavity vacuum valve, etc. The semiconductor manufacturing equipment is provided with a light intensity detection device for detecting the intensity of the light intensity signal of the relevant elements of the target gas in the preset process. Exemplarily, the semiconductor manufacturing equipment may be an etching equipment, and the light intensity detection equipment may include but is not limited to an EPD (End Point Detection) disposed in the etching equipment, etc. The EPD is a device that can stop etching according to the size of the wavelength signal emitted by the film material during etching. Specifically, the gas element monitoring of the EPD is based on the full spectrum detection method. The generator is turned on and provides gas dissociation energy to dissociate the target gas to form a plasma. During the dissociation process, the electron transition inside the gas molecules is stimulated to release energy. These energies are monitored by the EPD component when radiated in the form of photons, so as to realize the light intensity signal collection and obtain the light intensity information, such as the light intensity curve in the process.

[0080] It can be understood that if the reaction chamber is well sealed, the change in the amount of the target gas is only related to the gas consumption of the preset process, and accordingly, the light intensity change information only represents the gas consumption in the preset process; if there is a leak in the reaction chamber, in addition to the gas consumption of the process, the light intensity change information is also related to the gas leakage. According to the light intensity change information, it is determined that the amount of the target gas in the preset process becomes a normal gas consumption or a gas consumption higher than the normal gas consumption. If it is the latter, it is determined that the leakage temperature condition is met.

[0081] Specifically, the first temperature information is used to indicate the temperature of the target detection position on the vacuum air path, and the target detection position is located outside the reaction chamber and in the thermal convection area of ​​the reaction chamber. It can be understood that there are usually three forms of heat transfer: heat conduction, thermal convection and thermal radiation, wherein thermal convection refers to the phenomenon that thermal energy is transmitted from one place in the space to another through the hot particles of the flowing medium. In the case where the vacuum air path is connected to the reaction chamber, the gas in the reaction chamber will flow to the vacuum air path to form thermal convection, and the target detection position is set in the area where the thermal convection acts, and in the closed state of the reaction chamber, if there is no leakage on the vacuum air path, the vacuum air path is in a high vacuum state, then the thermal convection effect disappears, the target detection position is no longer affected by thermal convection, and the effect of high temperature heat transfer in the cavity to the target detection position is weakened, which can meet the natural cooling state and the cooling speed is fast; if there is a leakage on the vacuum air path, the thermal convection effect will cause the target detection position to have a continuous heat supply, resulting in a slower cooling speed than the case of no leakage, and then it can be determined by the detected first temperature information whether the leakage temperature condition is met. In one example, refer to Fig. 9 , the figure shows a partial structural diagram of an exemplary semiconductor manufacturing equipment, wherein one end of the vacuum air circuit 3 is connected to the vacuum pump 6, and the other end is connected to the reaction chamber 1 through the vacuum valve assembly 2, and the target detection position 31 can be set at a position close to the vacuum valve assembly 2, and the vacuum pump 6 is set on the auxiliary floor 7. More specifically, the target detection position 31 can be set between the elevated floor 4 and the waffle hole 5 to collect the first temperature information in a stable environment.

[0082] In summary, the technical solution of the present application detects the light intensity change information of the target gas in the preset process to characterize the change amount of the target gas, and detects the first temperature information of the target detection position on the vacuum gas path outside the reaction chamber in the closed state of the reaction chamber, and then judges the chamber airtightness in the semiconductor processing process by the change in gas quantity indicated by the light intensity change and the change in the temperature of the detection position indicated by the first temperature information. It can timely detect whether there is a chamber leak without taking the machine offline and terminating the process, avoiding affecting the service time of the machine, and realizing automatic monitoring of the chamber airtightness, which can significantly improve the real-time, accuracy and stability of the airtightness detection, reduce process defects caused by vacuum valve leakage, etc., and improve the yield rate of semiconductor devices. At the same time, the solution has a high level of automation, significantly reduces the demand for manual operation, and improves production efficiency.

[0083] In a possible implementation, the preset process includes a first sub-process, an idle interval step, and a second sub-process that are sequentially arranged. Specifically, in the idle interval step, the semiconductor device is in an idle state, the reaction chamber is sealed, and the vacuum valve assembly is closed to seal the reaction chamber. Specifically, the process conditions of the first sub-process and the second sub-process are consistent, that is, the target gas, temperature conditions, gas flow conditions, vacuum pumping power and other conditions used are completely consistent. Two repeated operation processes.

[0084] In a specific embodiment, the preset process is a chamber cleaning process, such as a waferless clean (WLC) process. The first sub-process and the second sub-process are respectively used for cleaning the reaction chamber, which are two repeated cleaning steps. The target gas is a functional gas for cleaning the reaction chamber. In the existing process, in order to make the chamber reach the optimal environment required for dry etching, the WLC process is performed after each wafer process to remove impurities such as polymers deposited in the reaction chamber. This cleaning process is an indispensable link. The WLC process is accompanied by the steps of purge and pump to remove residual particles and other impurities.

[0085] In the existing chamber cleaning process, only one cleaning is usually performed. For example, the operation procedure of the WLC process of the existing etching equipment is shown in Table 1 below, which specifically includes the STABLE-STRIKE-CLEAN (stable-ignition-cleaning) steps, wherein stabilization and ignition are pre-treatment steps of the cleaning step, the functional gas used is oxygen, and the setting parameters include step time, pressure, TV mode, high frequency power, low frequency power and gas flow, etc. After the cleaning step, vacuum is drawn to achieve impurity removal.

[0086] Table 1

[0087]

[0088] Different from the above-mentioned existing cleaning process, the chamber cleaning step of this embodiment is divided into two steps of cleaning, namely the first sub-process and the second sub-process, and an idle interval step is also set between the two cleaning sub-processes, in which the valve opening is set to 0 and the vacuum valve is closed. In this way, the necessary cleaning steps are used as the implementation process of the chamber sealing detection to avoid affecting the product process and reduce the complexity of the light intensity information and temperature information detection. At the same time, one-step cleaning is set as two-step cleaning to ensure the cleaning effect and cleaning efficiency. The idle interval step is used as the possible gas leakage time, and then the light intensity information of the previous and next cleaning processes is detected to achieve the acquisition of light intensity change information, so as to identify whether there is a leakage condition.

[0089] Compared with the example in Table 1, the operating procedure of the WLC process in this embodiment refers to Table 2. The first sub-process and the second sub-process both include STABLE-STRIKE-CLEAN, and the two have the same setting parameters, and the vacuum swing valve opening of the VAT Close step is 0.

[0090] Table 2

[0091]

[0092] Accordingly, an idle interval step (VAT Close Step) is added to the WLC process. By monitoring the light intensity of the relevant elements of the target gas (Coating gas) in the previous and next Clean steps, the light intensity change information can be obtained by comparing the light intensity, so as to determine whether the chamber is sealed.

[0093] Accordingly, obtaining the light intensity change information of the target gas in the reaction chamber in the preset process of semiconductor processing in S201 may include S301-S303:

[0094] S301: Acquire first light intensity information corresponding to a first sub-process and second light intensity information corresponding to a second sub-process;

[0095] S303: Generate light intensity change information based on the difference between the first light intensity information and the second light intensity information.

[0096] Specifically, the first light intensity information is generated based on the light intensity signal of the gas element collected by the light intensity detection device in the first sub-process, and may include multiple light intensity signals based on time series, and a first light intensity curve in the first sub-process may be generated based on the first light intensity information. The second light intensity information is generated based on the light intensity signal of the gas element collected by the light intensity detection device in the second sub-process, and may include multiple light intensity signals based on time series, and a second light intensity curve in the second sub-process may be generated based on the second light intensity information.

[0097] Specifically, the light intensity change information is used to indicate the light intensity difference between the first sub-process and the second sub-process, and is obtained by calculating the difference between the first light intensity information and the second light intensity information. As mentioned above, if there is no chamber leakage condition, the light intensity change information is only related to the normal gas consumption in the preset process; if there is a chamber leakage condition, in addition to the normal consumption, there is also gas leakage loss, then the light intensity change must be higher than the normal condition, so by comparing the currently detected light intensity change information with the reference light intensity change information of the normal chamber condition, it can be determined whether there is a chamber leak, and the airtightness detection in the normal process can be realized without stopping the line, effectively improving the timeliness and efficiency of leakage risk investigation and reducing the detection cost.

[0098] Accordingly, if the difference between the light intensity difference corresponding to the light intensity change information and the reference light intensity difference exceeds the first preset difference, it is determined that the quantitative change of the target gas in the preset process meets the leakage quantitative change condition, and the reference light intensity difference represents the difference between the first light intensity information collected under normal working conditions of the chamber without leakage and the second light intensity information. It can be understood that the light intensity difference represents the difference between the first light intensity information of the current first sub-process and the second light intensity information of the second sub-process, and the reference light intensity difference represents the difference between the first light intensity information collected under normal working conditions of the chamber without leakage and the second light intensity information. If the current light intensity difference obviously exceeds the reference light intensity difference, it indicates that the target gas has abnormal consumption, and there may be a vacuum valve leakage in the idle interval step, then it is determined that the quantitative change of the target gas meets the leakage quantitative change condition, that is, it indicates that the chamber is leaking, otherwise, it indicates that there is no leakage. Specifically, the preset difference is used to offset the error of light intensity information collection and the error of normal consumption of target gas to improve the accuracy of leakage detection based on light intensity. The preset difference can be calibrated based on specific semiconductor manufacturing equipment.

[0099] In one embodiment, the light intensity difference corresponding to the light intensity change information is the difference between the first light intensity mean and the second light intensity mean. The first light intensity mean is obtained by average calculation based on the first light intensity information, and the second light intensity mean is obtained by average calculation based on the second light intensity information. As mentioned above, the first light intensity information includes multiple light intensity signal intensities collected in the first sub-process, and the first light intensity mean is obtained by average calculation. The second light intensity information includes multiple light intensity signal intensities collected in the second sub-process, and the second light intensity mean is obtained by average calculation. The difference between the first light intensity information and the second light intensity mean is determined as the light intensity difference corresponding to the light intensity change information. If it is greater than the first preset difference, it is determined that there is a leak. The light intensity difference between the previous and next processes is characterized by average calculation, the calculation error caused by detection noise is reduced, and the accuracy of leak detection is improved.

[0100] Take the WLC preset process in Table 2 above as an example. Figure 3The judgment process of light intensity change information and leakage quantity change conditions includes: executing the WLC process after each wafer process is completed, including the first sub-process, the idle interval step and the second sub-process, and using the EPD device to monitor the light intensity signal of the target gas (coating gas) related elements along the process to obtain the first light intensity information and the second light intensity information; calculating the decrease value of the light intensity signal intensity of the Clean step before and after the idle interval step according to the first light intensity information and the second light intensity information to obtain the light intensity difference; comparing the light intensity difference with the reference light intensity difference to determine whether the difference between the light intensity difference and the reference light intensity difference exceeds the first preset difference to confirm whether there is a gas loss caused by vacuum valve leakage in the intermediate idle interval step, and then the machine feeds back the self-test result based on the judgment result, if it exceeds, it is determined to be leaked, otherwise it is determined to be not leaked.

[0101] For example, reference Figure 4 and Figure 5 , Figure 4 shows generating a light intensity curve based on the first light intensity information and the second light intensity information, Figure 5 The figure shows the light intensity signal intensity of the Coating Gas collected in the two Clean steps of WLC when the leak rate test is stable (under normal working conditions), and the monitoring element in the figure is F. The currently collected light intensity difference Y = Mean (A) - Mean (B), the reference light intensity difference BSL1 = Mean (A') - Mean (B'), the difference between the light intensity difference and the reference light intensity difference X = Mean (A) - Mean (B) - BSL1, where Mean (A) and Mean (B) are the light intensity mean values ​​of the first sub-process and the second sub-process obtained in the WLC process during the sealing test, respectively, as shown in FIG. Figure 4 The light intensity mean of the two light intensity curves in , Mean(A')-Mean(B') is the light intensity mean of the first sub-process and the light intensity mean of the second sub-process obtained in the WLC process under normal leakage rate conditions, such as Figure 5 In this example, the first preset difference is 40, based on Figure 5 The calculated BSL1 = 6853.1-6828.8 = 24.3, based on Figure 4 The calculated Y=6743.4-6666.8=76.6, and correspondingly, X=76.6-24.3=52.3, which is greater than 40, indicating that the leakage quantitative change condition is met, and an alarm message is generated to prompt the subsequent inspection operation, and the leakage is likely to be caused by the damage of the vacuum valve component. In the above example, the comparison result of the difference X is directly used to determine whether the leakage quantitative change condition is met. In actual applications, the difference X can also be processed by exponential amplification to improve the detection sensitivity.

[0102] Based on some or all of the above embodiments, in a possible embodiment, the first temperature information is obtained when the temperature of the reaction chamber is higher than the ambient temperature. For example, after an etching process or a chamber cleaning process or other processes that require heating, the connection between the vacuum air circuit and the reaction chamber can be disconnected, and then the temperature detection of the target detection position is performed. If the first temperature information indicates that the temperature drop rate of the target detection position does not meet the natural cooling state, it is determined that the leakage temperature condition is met. If the first temperature information indicates that the temperature drop rate of the target detection position meets the natural cooling state, it is determined that the leakage temperature condition is not met. Among them, the natural cooling state refers to the state in which the vacuum air circuit is not connected to the reaction chamber and the vacuum valve assembly is not leaking, that is, when there is no thermal convection in the air circuit, the target detection position is naturally cooled at the ambient temperature. It can be understood that if there is a leakage in the vacuum valve assembly, there is thermal convection between the reaction chamber and the target detection position, resulting in the target detection position being unable to cool down naturally, indicating that there is a leakage. In this way, the air tightness detection of the chamber can be realized through automatic temperature monitoring in the processing process, reducing the impact of manual leak rate detection on the chamber environment, and setting the temperature detection point on the vacuum air path can directly locate the leakage problem caused by the damage of the vacuum valve assembly.

[0103] In a possible implementation manner, the method for determining whether the natural cooling state is satisfied specifically includes S401-S407:

[0104] S401: Determine a temperature average of a target detection position within a preset time based on first temperature information;

[0105] S403: determining a temperature difference between the temperature average and a reference temperature average, wherein the reference temperature average is determined based on reference temperature information of a target detection position naturally cooling down within a preset time when the reaction chamber is not leaking;

[0106] S405: If the temperature difference exceeds the second preset difference, it is determined that the temperature drop rate of the target detection position does not meet the natural temperature drop state;

[0107] S407: If the temperature difference does not exceed the second preset difference, it is determined that the temperature drop rate of the target detection position satisfies the natural temperature drop state.

[0108] Specifically, after the process of heating the environment in the reaction chamber, the semiconductor manufacturing equipment is switched to an idle state, and multiple temperature values ​​of the target detection position within a preset time are collected to obtain the first temperature information, and the above multiple temperature values ​​are averaged to obtain the temperature average. In addition, under normal working conditions where the reaction chamber is not leaking, the reference temperature information of the target detection position within a preset time is collected under the same temperature detection conditions, and the temperature average within the preset time is calculated as the reference temperature average. It can be understood that the reference temperature average is obtained and stored before the sealing test. The temperature difference between the calculated temperature average and the reference temperature average, if lower than the second preset difference, indicates that the temperature drop rate is fast, there is no thermal convection effect, and the natural cooling state is met, and an alarm message is generated; otherwise, it indicates that the temperature drop rate is slow, there is thermal convection effect, and the natural cooling state is not met. In this way, the reference temperature average when the leakage rate is normal is used as a reference baseline to determine whether the current temperature average is too low, reduce the calculation noise of leakage detection based on the first temperature information, and improve the detection accuracy.

[0109] In a possible implementation manner, the reaction chamber and the vacuum air path can be connected and disconnected through a vacuum valve assembly, and the vacuum valve assembly is located between the reaction chamber and the target detection position. In order to improve the accuracy of the leakage judgment based on the first temperature information, reference Fig. 9 A first detection position 11 located in the reaction chamber and a second detection position 21 located in the vacuum valve assembly are also provided to monitor the second temperature information of the reaction chamber and the third temperature information of the vacuum valve assembly, so that the second temperature information and the third temperature information are used as reference information for determining the temperature drop rate.

[0110] Accordingly, obtaining the light intensity change information of the target gas in the reaction chamber in the preset process of semiconductor processing in S201, and at least one of the first temperature information corresponding to the vacuum air path in the closed state of the reaction chamber can be specifically: obtaining the light intensity change information, and / or, when the reaction chamber and the vacuum valve are both in a constant temperature setting state, obtaining the first temperature information of the target detection position in the closed state of the reaction chamber, the second temperature information of the reaction chamber and the third temperature information of the vacuum valve assembly.

[0111] Before generating the alarm information indicating the leakage of the reaction chamber in S203, the method further includes: if the second temperature information and the third temperature information both satisfy the constant temperature state and the first temperature information satisfies the leakage temperature condition, executing the step of generating the alarm information indicating the leakage of the reaction chamber.

[0112] Specifically, the first temperature information, the second temperature information and the third temperature information are all obtained when the vacuum valve assembly is closed and the reaction chamber and the vacuum valve assembly are set to a constant temperature state. It can be understood that even when the chamber is sealed, there is still heat radiation and heat conduction between the target detection position, the reaction chamber and the vacuum valve assembly. By setting the reaction chamber and the vacuum valve assembly to a constant temperature, the variables and data noise in the judgment of the leakage temperature condition can be reduced, thereby improving the detection accuracy.

[0113] In some embodiments, the chamber temperature detection device and temperature control device integrated in the semiconductor manufacturing equipment itself are used to collect the second temperature information and control the constant temperature state of the reaction chamber. A heating component is provided on the vacuum valve assembly to adjust the temperature of the vacuum valve assembly to keep it at a constant temperature. It can be understood that the constant temperature setting temperature of the reaction chamber may be different based on different processes. Exemplarily, the constant temperature setting temperature of the first detection position may be 270°C, and the constant temperature setting temperature of the second detection position may be 120°C.

[0114] Specifically, in addition to determining whether the first temperature information meets the leakage temperature condition, it is also necessary to determine whether the second temperature information and the third temperature information meet the constant temperature state. If the first temperature information indicates that the fluctuation of the reaction chamber temperature is within the preset error within the preset time, and the second temperature information indicates that the fluctuation of the vacuum valve component temperature is within the preset error, then it is determined that the second temperature information and the third temperature information meet the constant temperature state, and it can be accurately detected based on the first temperature information whether the natural cooling state is met. On the contrary, if it is determined that the constant temperature state is not met, there may be other leakage or temperature control component problems, etc., and other risk investigations need to be carried out.

[0115] In a specific embodiment, reference Figure 6The judgment process of the leakage temperature condition specifically includes: collecting the temperature information of the first detection position, the second detection position and the target detection position within a certain time after the process of heating the reaction chamber starts the idle state, or after other working conditions that meet the temperature detection; calculating the temperature average of the target detection position within the preset time; calculating the temperature average of the target detection position within the preset time; and, collecting the temperature information of the three detection positions within the preset time after the idle state starts when the cavity leakage rate is normal, and calculating the reference temperature average as BSL2; if the second temperature information and the third temperature information are normal, and the temperature average of the target detection position is higher than a certain value of BSL2, it is determined that the leakage temperature condition is met; the machine feeds back the self-test result. Among them, the reference chamber temperature average and the reference valve temperature average can be calculated based on the second temperature information and the third temperature information obtained when the cavity leakage rate is normal, and the chamber temperature average and the valve temperature average can be calculated based on the second temperature information and the third temperature information obtained during the sealing test. If the difference between the chamber temperature average and the reference chamber temperature average is less than the preset error, and the difference between the valve temperature average and the reference valve temperature average is less than the preset error, it is determined that the second temperature information and the third temperature information are normal.

[0116] For example, taking the dry etching and degumming equipment as an example, the set temperature of the reaction chamber is 275°C, and the set temperature of the vacuum valve is 120°C, which can prevent the accumulation of byproducts in the valve and corrosion. After the chamber process is completed, the equipment state is switched to the idle state, and the temperature information of the three detection positions is monitored at the same time, and the following is obtained: Figure 7 The first detection position temperature curve corresponding to the second temperature information, the second detection position temperature curve corresponding to the third temperature information, and the target detection position temperature curve corresponding to the first temperature information are shown, and based on Figure 7 The target detection position temperature curve corresponding to the first temperature information in the figure below calculates the temperature mean value Mean(detection) of the target detection position, and based on Figure 7 The reference temperature curve corresponding to the reference temperature information in the figure below calculates the reference temperature mean Mean (reference). In this embodiment, the first detection position temperature curve and the second detection position temperature curve both indicate a constant temperature state, and Mean (detection) - Mean (reference) > the second preset difference, determining that the vacuum valve assembly is leaking, executing the machine shutdown and corresponding inspection and maintenance operations.

[0117] Based on some or all of the above embodiments, in some embodiments, the first temperature information is obtained after determining that the light intensity change information indicates that the quantitative change of the target gas in the preset process meets the leakage quantitative change condition. That is, after obtaining the light intensity change information, first determine whether it meets the leakage quantitative change condition. If it does, perform the step of determining whether the first temperature information meets the leakage temperature condition. If it does, determine that the chamber is leaking and locate it as a vacuum valve leak. Accordingly, S203 includes: when the leakage quantitative change condition is met and the first temperature information indicates that the leakage temperature condition is met, generate alarm information indicating that the reaction chamber is leaking.

[0118] In a specific embodiment, referring to Figure 8 The sealing detection method may specifically include: performing a chamber cleaning process after each wafer process is completed; EPD monitors the light intensity signal of the relevant elements of the target gas to obtain the light intensity average of the first sub-process and the light intensity average of the second sub-process; determining the light intensity difference between the light intensity average of the first sub-process and the light intensity average of the second sub-process, and comparing it with the reference light intensity difference; the machine feeds back the self-test result; judging whether the difference between the light intensity difference and the reference light intensity difference exceeds the preset light intensity difference, if not, determining that there is no leakage in the vacuum valve assembly; if so, when the reaction chamber is in the idle state after the preset process, or other vacuum valves are closed. When the chamber is in a sealed state, the first temperature information, the second temperature information and the third temperature information are detected, and the temperature information of each detection position within the preset time in the Idle state is obtained when the sealing state of the chamber is normal; then, the temperature average of each detection position temperature within the preset time when the vacuum valve assembly is closed is calculated, and compared with the corresponding reference average; if the second temperature information and the third temperature information indicate that the temperature is constant, it is determined whether the temperature difference between the temperature average corresponding to the first temperature information and the reference temperature average exceeds the second preset difference, if so, it is determined that the vacuum valve assembly has a leak; if not, it is determined that the vacuum valve assembly does not have a leak. In this way, light intensity detection is first performed in the process to preliminarily determine whether there is a vacuum valve leak, and the system switches to the idle state when an abnormality is determined, and the sealing condition of the vacuum valve is further verified based on temperature detection to reduce the false detection rate.

[0119] In other embodiments, the first temperature information of the reaction chamber in a sealed state is obtained during an idle interval step. As mentioned above, the preset process includes a first sub-process, an idle interval step, and a second sub-process. In the idle interval step, the device is in an idle state and the vacuum valve assembly of the vacuum air circuit is closed. In the first sub-process, the reaction chamber needs to be heated. Accordingly, the temperature detection step is embedded in the idle interval step, and the light intensity change information and the first temperature information can be obtained in coordination after the preset process is completed, which ensures the detection accuracy and significantly reduces the complexity of the detection process.

[0120] In summary, compared with the existing leak rate detection method, the technical solution of this application implants the chamber sealing detection process into the normal product manufacturing process, which does not affect the service life of the machine and realizes automatic monitoring of sealing, timely discovers problems, reduces product risks, and avoids the impact of manual leak detection on the chamber environment. In addition, this application can directly indicate whether there is a vacuum valve leakage problem, and timely check the defects of the vacuum pump group to avoid a large number of product defects and losses.

[0121] The present application also provides a sealing detection device for semiconductor manufacturing equipment. Figure 5 A schematic diagram of a sealing detection device for semiconductor manufacturing equipment provided in an embodiment of the present application is shown. Specifically, the semiconductor manufacturing equipment includes a reaction chamber and a vacuum air path that can be connected and disconnected to the reaction chamber. The device may include:

[0122] An acquisition module: used to acquire at least one of light intensity change information of a target gas in a reaction chamber in a preset process of semiconductor processing and first temperature information corresponding to a vacuum air path in a closed state of the reaction chamber, wherein the target gas is a functional gas used in the preset process, the light intensity change information is related to the content of the target gas, and the first temperature information is used to indicate the temperature of a target detection position in the vacuum air path, wherein the target detection position is located outside the reaction chamber and in a thermal convection region of the reaction chamber;

[0123] Alarm module: used for generating alarm information indicating leakage of the reaction chamber if it is determined that the light intensity change information indicates that the quantitative change of the target gas in the preset process satisfies at least one of the leakage quantitative change condition and the first temperature information satisfies the leakage temperature condition.

[0124] In a possible implementation manner, the preset process includes a first sub-process, an idle interval step, and a second sub-process arranged in sequence, the process conditions of the first sub-process and the second sub-process are consistent, the semiconductor device is in a non-working state and the reaction chamber is sealed in the idle interval step; the acquisition module is specifically used for:

[0125] Acquire first light intensity information of the first sub-process and second light intensity information of the second sub-process;

[0126] Light intensity variation information is generated based on the difference between the first light intensity information and the second light intensity information, and the light intensity variation information is used to indicate the light intensity difference between the first sub-process and the second sub-process.

[0127] In a possible implementation manner, the device further includes a condition judgment module, which is used to:

[0128] If the difference between the light intensity difference corresponding to the light intensity change information and the reference light intensity difference exceeds the first preset difference, it is determined that the quantitative change of the target gas in the preset process meets the leakage quantitative change condition, and the reference light intensity difference represents the difference between the first light intensity information and the second light intensity information collected under normal operating conditions of the chamber when there is no leakage in the chamber.

[0129] In a possible implementation, the light intensity difference corresponding to the light intensity change information is the difference between the first light intensity mean and the second light intensity mean, the first light intensity mean is obtained by mean calculation based on the first light intensity information, and the second light intensity mean is obtained by mean calculation based on the second light intensity information.

[0130] In a possible implementation manner, the preset process is a chamber cleaning process, the first sub-process and the second sub-process are respectively used for cleaning the reaction chamber, and the target gas is a functional gas for cleaning the reaction chamber.

[0131] In a possible implementation, the first temperature information is obtained when the temperature of the reaction chamber is higher than the ambient temperature; the condition judgment module is used to: if the first temperature information indicates that the temperature drop rate of the target detection position does not meet the natural cooling state, determine that the leakage temperature condition is met.

[0132] In a possible implementation manner, the device further includes a temperature drop information acquisition module, which is used to:

[0133] Before generating alarm information indicating leakage of the reaction chamber, determining a temperature average of a target detection position within a preset time based on the first temperature information;

[0134] Determine a temperature difference between the temperature average and a reference temperature average, wherein the reference temperature average is determined based on reference temperature information of a target detection position naturally cooling down within a preset time when the reaction chamber is not leaking;

[0135] If the temperature difference exceeds the second preset difference, it is determined that the temperature drop rate of the target detection position does not satisfy the natural temperature drop state.

[0136] In a possible implementation manner, the reaction chamber and the vacuum air path can be connected and disconnected through a vacuum valve assembly, and the vacuum valve assembly is located between the reaction chamber and the target detection position, and the acquisition module is specifically used for:

[0137] Acquire light intensity change information, and / or, when the reaction chamber and the vacuum valve are both in a constant temperature setting state, acquire first temperature information of the target detection position in the closed state of the reaction chamber, second temperature information of the reaction chamber, and third temperature information of the vacuum valve assembly;

[0138] The alarm module is specifically used for: before generating the alarm information indicating the leakage of the reaction chamber, if the second temperature information and the third temperature information both meet the constant temperature state and the first temperature information meets the leakage temperature condition, executing the step of generating the alarm information indicating the leakage of the reaction chamber.

[0139] In a possible implementation manner, the first temperature information is obtained after determining that the light intensity change information indicates that the quantitative change of the target gas in the preset process meets the leakage quantitative change condition;

[0140] The alarm module is specifically used to generate alarm information indicating leakage of the reaction chamber when the leakage quantity change condition is met and the first temperature information indicates that the leakage temperature condition is met.

[0141] In a possible implementation manner, the first temperature information of the reaction chamber in a sealed state is obtained during an idle interval step.

[0142] It should be noted that the above device embodiment and method embodiment are based on the same implementation method.

[0143] An embodiment of the present application provides a sealing detection device for semiconductor manufacturing equipment. The device can be a terminal or a server, including a processor and a memory, in which at least one instruction or at least one program is stored. The at least one instruction or the at least one program is loaded and executed by the processor to implement the sealing detection method for semiconductor manufacturing equipment provided in the above method embodiment.

[0144] The memory can be used to store software programs and modules. The processor executes various functional applications and seal detection for semiconductor manufacturing equipment by running the software programs and modules stored in the memory. The memory can mainly include a program storage area and a data storage area, wherein the program storage area can store an operating system, application programs required for functions, etc.; the data storage area can store data created according to the use of the equipment, etc. In addition, the memory can include a high-speed random access memory and can also include a non-volatile memory, such as at least one disk storage device, a flash memory device, or other volatile solid-state storage devices. Accordingly, the memory can also include a memory controller to provide the processor with access to the memory.

[0145] The method embodiments provided in the embodiments of the present application can be executed in electronic devices such as mobile terminals, computer terminals, servers or similar computing devices. Fig.11 1 is a hardware structure block diagram of an electronic device for a sealing detection method for semiconductor manufacturing equipment provided in an embodiment of the present application. Fig.11As shown, the electronic device 900 may have relatively large differences due to different configurations or performances, and may include one or more central processing units (CPU) 910 (the processor 910 may include but is not limited to a processing device such as a microprocessor MCU or a programmable logic device FPGA), a memory 930 for storing data, and one or more storage media 920 (such as one or more mass storage devices) for storing application programs 923 or data 922. Among them, the memory 930 and the storage medium 920 can be short-term storage or permanent storage. The program stored in the storage medium 920 may include one or more modules, each of which may include a series of instruction operations in the electronic device. Furthermore, the central processing unit 910 can be configured to communicate with the storage medium 920 and execute a series of instruction operations in the storage medium 920 on the electronic device 900. The electronic device 900 may also include one or more power supplies 960, one or more wired or wireless network interfaces 950, one or more input and output interfaces 940, and / or, one or more operating systems 921, such as Windows Server TM , Mac OS X TM , Unix TM , LinuxTM, FreeBSDTM, etc.

[0146] The input / output interface 940 may be used to receive or send data via a network. The specific example of the network may include a wireless network provided by a communication provider of the electronic device 900. In one example, the input / output interface 940 includes a network adapter (Network Interface Controller, NIC), which may be connected to other network devices via a base station so as to communicate with the Internet. In one example, the input / output interface 940 may be a radio frequency (RF) module, which is used to communicate with the Internet wirelessly.

[0147] It can be understood by those skilled in the art that Fig.11 The structure shown is only for illustration and does not limit the structure of the above electronic device. Fig.11 More or fewer components as shown, or with Fig.11 Different configurations shown.

[0148] An embodiment of the present application also provides a computer-readable storage medium, which can be set in an electronic device to store at least one instruction or at least one program related to implementing a sealing detection method for semiconductor manufacturing equipment in a method embodiment. The at least one instruction or the at least one program is loaded and executed by the processor to implement the sealing detection method for semiconductor manufacturing equipment provided in the above method embodiment.

[0149] Optionally, in this embodiment, the storage medium may be located in at least one of the multiple network servers of the computer network. Optionally, in this embodiment, the storage medium may include, but is not limited to, various media that can store program codes, such as a USB flash drive, a read-only memory (ROM), a random access memory (RAM), a mobile hard disk, a magnetic disk, or an optical disk.

[0150] According to one aspect of the present application, a computer program product or a computer program is provided, the computer program product or the computer program comprising computer instructions, the computer instructions being stored in a computer-readable storage medium. A processor of a computer device reads the computer instructions from the computer-readable storage medium, and the processor executes the computer instructions, so that the computer device executes the methods provided in the above-mentioned various optional implementations.

[0151] It should be noted that the above-mentioned sequence of the embodiments of the present application is for description only and does not represent the advantages and disadvantages of the embodiments. The above-mentioned specific embodiments of the present application are described. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the embodiments and still achieve the desired results. In addition, the processes depicted in the drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0152] Each embodiment in this application is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the device, equipment and storage medium embodiments, since they are basically similar to the method embodiments, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0153] A person skilled in the art will understand that all or part of the steps to implement the above embodiments may be accomplished by hardware, or may be accomplished by instructing the relevant hardware through a program, and the program may be stored in a computer-readable storage medium, and the above-mentioned storage medium may be a read-only memory, a disk or an optical disk, etc.

[0154] The above are only preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A method for detecting the sealing performance of semiconductor manufacturing equipment, wherein the semiconductor manufacturing equipment comprises a reaction chamber and a vacuum air path which is connectable and disconnectable to the reaction chamber, characterized in that: The method comprises: Obtaining at least one of light intensity change information of a target gas in the reaction chamber in a preset process of semiconductor processing and first temperature information corresponding to the vacuum air path in a closed state of the reaction chamber, wherein the target gas is a functional gas used in the preset process, the light intensity change information is related to the content of the target gas, and the first temperature information is used to indicate the temperature of a target detection position on the vacuum air path, wherein the target detection position is located outside the reaction chamber and in a thermal convection region of the reaction chamber; If it is determined that the light intensity change information indicates that the quantity change of the target gas in the preset process satisfies at least one of a leakage quantity change condition and the first temperature information satisfies a leakage temperature condition, alarm information indicating leakage of the reaction chamber is generated.

2. The method according to claim 1, characterized in that The preset process includes a first sub-process, an idle interval step, and a second sub-process arranged in sequence, the process conditions of the first sub-process and the second sub-process are consistent, the semiconductor device is in a non-working state and the reaction chamber is sealed in the idle interval step; the light intensity change information of the target gas in the reaction chamber in the preset process of semiconductor processing is obtained, including: Acquire first light intensity information corresponding to the first sub-process and second light intensity information corresponding to the second sub-process; The light intensity variation information is generated based on the difference between the first light intensity information and the second light intensity information, and the light intensity variation information is used to indicate the light intensity difference between the first sub-process and the second sub-process.

3. The method according to claim 2, characterized in that The method further comprises: If the difference between the light intensity difference corresponding to the light intensity change information and the reference light intensity difference exceeds a first preset difference, it is determined that the quantitative change of the target gas in the preset process meets the leakage quantitative change condition, and the reference light intensity difference represents the difference between the first light intensity information and the second light intensity information collected under normal operating conditions of the chamber when there is no leakage in the chamber.

4. The method according to claim 2, characterized in that: The light intensity difference corresponding to the light intensity change information is the difference between the first light intensity mean and the second light intensity mean, the first light intensity mean is obtained by mean calculation based on the first light intensity information, and the second light intensity mean is obtained by mean calculation based on the second light intensity information.

5. The method according to claim 2, characterized in that: The preset process is a chamber cleaning process, the first sub-process and the second sub-process are respectively used for cleaning the reaction chamber, and the target gas is a functional gas used for cleaning the reaction chamber.

6. The method according to claim 1, characterized in that The first temperature information is obtained when the temperature of the reaction chamber is higher than the ambient temperature; if the first temperature information indicates that the temperature drop rate of the target detection position does not satisfy the natural cooling state, it is determined that the leakage temperature condition is satisfied, and the natural cooling state refers to the state in which the target detection position is naturally cooled at the ambient temperature when the vacuum air circuit is not connected to the reaction chamber and the vacuum valve assembly does not leak.

7. The method according to claim 6, characterized in that The method comprises: Determine a temperature average of the target detection position within the preset time based on the first temperature information; Determine a temperature difference between the temperature average and a reference temperature average, wherein the reference temperature average is determined based on reference temperature information of the target detection position being naturally cooled within a preset time when the reaction chamber is in a non-leaking state; If the temperature difference exceeds a second preset difference, it is determined that the temperature drop rate of the target detection position does not satisfy the natural temperature drop state.

8. The method according to any one of claims 1 to 7, wherein the reaction chamber and the vacuum air path can be connected and disconnected via a vacuum valve assembly, and the vacuum valve assembly is located between the reaction chamber and the target detection position, characterized in that: The obtaining of at least one of the light intensity change information of the target gas in the reaction chamber in the preset process of semiconductor processing and the first temperature information corresponding to the vacuum air path in the closed state of the reaction chamber includes: Acquire the light intensity change information, and / or, when the reaction chamber and the vacuum valve are both in a constant temperature setting state, acquire first temperature information of the target detection position in a closed state of the reaction chamber, second temperature information of the reaction chamber, and third temperature information of the vacuum valve assembly; Before generating the alarm information indicating the leakage of the reaction chamber, the method further includes: If the second temperature information and the third temperature information both satisfy a constant temperature state, and the first temperature information satisfies a leakage temperature condition, the step of generating alarm information indicating leakage of the reaction chamber is performed.

9. The method according to any one of claims 1 to 7, characterized in that: The first temperature information is obtained after determining that the light intensity change information indicates that the quantitative change of the target gas in the preset process meets the leakage quantitative change condition; When the leakage quantity change condition is met and the first temperature information indicates that the leakage temperature condition is met, alarm information indicating leakage of the reaction chamber is generated.

10. The method according to any one of claims 2 to 7, characterized in that: The first temperature information of the reaction chamber in a sealed state is obtained during the idle interval step.

11. A sealing detection device for semiconductor manufacturing equipment, the semiconductor manufacturing equipment comprising a reaction chamber and a vacuum exhaust air circuit that can be connected and disconnected to the reaction chamber, characterized in that: The device comprises: An acquisition module: used to acquire at least one of light intensity change information of a target gas in the reaction chamber in a preset process of semiconductor processing, and first temperature information corresponding to the vacuum air path in a closed state of the reaction chamber, wherein the target gas is a functional gas used in the preset process, the light intensity change information is related to the content of the target gas, and the first temperature information is used to indicate the temperature of a target detection position on the vacuum air path, wherein the target detection position is located outside the reaction chamber and in a thermal convection region of the reaction chamber; Alarm module: for generating alarm information indicating leakage of the reaction chamber if it is determined that the light intensity change information indicates that the quantitative change of the target gas in the preset process satisfies at least one of a leakage quantitative change condition and the first temperature information satisfies a leakage temperature condition.

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