Detection system and method for wafer and related product

Abstract

The invention discloses a wafer detection system and method and a related product. The defect detection system comprises a light source module, a preprocessing module, a camera module and a detection module, wherein the light source module is used for providing first light, and the wave band range of the first light is larger than a preset wave band range; the preprocessing module is used for preprocessing the light to obtain second light; the camera module is used for shooting a wafer based on the second light to obtain a wafer image; and the detection module is used for detecting the wafer image to obtain a defect detection result of the wafer. Through the scheme of the invention, the wafer can be detected in different wave band ranges, and the wafer detection efficiency can be improved.

Description

Technical Field

[0001] The present application generally relates to the field of semiconductor technology. More specifically, the present application relates to a detection system, method and related products for wafers. Background Art

[0002] With the continuous innovation and development of the electronics industry, people's quality requirements for semiconductors are getting higher and higher. At present, many production lines still use manual visual inspection. Operators work on continuous production lines during working hours. There are generally shortcomings such as low inspection efficiency and inconsistent standards caused by human errors. Therefore, defect detection of semiconductor chips has become a very important part of the current industry.

[0003] At present, the most common light source on the market is LED, which is basically visible light (about 450-650nm). By using visible light detection, some common surface defects can be detected. However, the detection requirements of some defects (such as tiny cracks, internal defects, etc.) are higher, and they can only be detected by using bands other than visible light, such as ultraviolet light (such as near-long-wave ultraviolet 320-400nm), infrared light (short-wave infrared 900-1700nm), etc. At this time, when using visible light, ultraviolet light or infrared light detection alone, different defects of the wafer cannot be detected. When using light sources of different wavelengths to detect semiconductor chips, the efficiency is low. At this time, the detection effect of LED light sources is limited.

[0004] In view of this, there is an urgent need to provide a wafer inspection system, method and related products so as to improve the efficiency of wafer inspection. Summary of the invention

[0005] In order to at least solve one or more of the technical problems mentioned above, the present application proposes a defect detection system, method and related product solutions for wafers in multiple aspects.

[0006] In a first aspect, the present application provides a defect detection system for a wafer, the defect detection system comprising a light source module, a preprocessing module, a camera module and a detection module; wherein the light source module is used to provide a first light, wherein the wavelength range of the first light is greater than a preset wavelength range; the preprocessing module is used to preprocess the light to obtain a second light; the camera module is used to photograph the wafer based on the second light to obtain a wafer image; the detection module is used to detect the wafer image to obtain a defect detection result of the wafer.

[0007] In some embodiments, the preprocessing module includes a first adjustment module and a second adjustment module; wherein the first adjustment module is used to couple the first light to obtain a first coupled light; and the second adjustment module is used to adjust the first coupled light to obtain a second light.

[0008] In some embodiments, the defect detection system further includes a cooling module, wherein the cooling module is connected to the light source module and is used to cool the light source module.

[0009] In some embodiments, the defect detection system further includes a trigger module; wherein the trigger module is electrically connected to the camera module and the light source module, and is used to enable the camera module and the light source module to operate synchronously.

[0010] In some embodiments, the light source module includes a xenon lamp.

[0011] In some embodiments, the defect detection system also includes a driving module and a capacitor module; wherein the driving module is electrically connected to the light source module to make the xenon lamp strobe; and the capacitor module is electrically connected to the light source module to control the output intensity of the xenon lamp.

[0012] In some embodiments, the second adjustment module includes a first color wheel and a second color wheel; wherein the first color wheel includes a band filter color wheel for filtering the first coupled light in a band; and the second color wheel includes an intensity filter color wheel for filtering the first coupled light in intensity.

[0013] In a second aspect, the present application provides a method for a defect detection system for a wafer, the defect detection system comprising a light source module, a preprocessing module, a camera module and a detection module, the method comprising: using the light source module to provide a first light, wherein a wavelength range of the first light is greater than a preset wavelength range; using the preprocessing module to preprocess the first light to obtain a second light; based on the second light, using the camera module to photograph the light source to obtain a wafer image; using the detection module to detect the wafer image to obtain a defect detection result of the wafer.

[0014] In a third aspect, the present application provides an electronic device, comprising: a processor; and a memory storing program instructions for a defect detection system for a wafer, wherein when the program instructions are executed by the processor, the electronic device executes the method described in the second aspect.

[0015] In a fourth aspect, the present application provides a computer-readable storage medium storing program instructions for a wafer defect detection system, wherein when the program instructions are executed by a processor, the method according to the second aspect is implemented.

[0016] Through the defect detection system, method and related products for wafers provided above, the solution of the present application can detect wafers within different waveband ranges, thereby improving the efficiency of wafer detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] By reading the detailed description below with reference to the accompanying drawings, the above and other purposes, features and advantages of the exemplary embodiments of the present application will become easy to understand. In the accompanying drawings, several embodiments of the present application are shown in an exemplary and non-limiting manner, and the same or corresponding reference numerals represent the same or corresponding parts, wherein: Figure 1 An exemplary block diagram of a defect detection system according to some embodiments of the present application is shown; Figure 2 An exemplary light path simulation diagram of preprocessing the first light in some embodiments of the present application is shown; Figure 3 An exemplary block diagram showing a defect detection system according to some other embodiments of the present application; Figure 4 An exemplary block diagram showing a defect detection system according to some other embodiments of the present application; Figure 5 An exemplary flow chart of a method 500 for a wafer defect detection system according to some embodiments of the present application is shown; Figure 6 An exemplary block diagram of an electronic device 600 for a method of a wafer defect detection system according to some embodiments of the present application is shown. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0019] It should be understood that the terms "include" and "comprising" used in the specification and claims of the present application indicate the presence of described features, wholes, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or collections thereof.

[0020] It should also be understood that the terms used in this application specification are only for the purpose of describing specific embodiments and are not intended to limit the present application. As used in this application specification and claims, unless the context clearly indicates otherwise, the singular forms of "a", "an" and "the" are intended to include plural forms. It should also be further understood that the term "and / or" used in this application specification and claims refers to any combination of one or more of the associated listed items and all possible combinations, and includes these combinations.

[0021] As used in this specification and claims, the term "if" can be interpreted as "when" or "upon" or "in response to determining" or "in response to detecting," depending on the context. Similarly, the phrases "if it is determined" or "if [described condition or event] is detected" can be interpreted as meaning "upon determination" or "in response to determining" or "upon detection of [described condition or event]" or "in response to detecting [described condition or event]," depending on the context.

[0022] The specific implementation of the present application is described in detail below with reference to the accompanying drawings.

[0023] Figure 1 An exemplary block diagram of a detection system according to some embodiments of the present application is shown. Figure 1 As shown, in some embodiments, the defect detection system includes a light source module, a preprocessing module, a camera module and a detection module; wherein the light source module is used to provide a first light, wherein the wavelength range of the first light is greater than a preset wavelength range; the preprocessing module is used to preprocess the light to obtain a second light; the camera module is used to photograph the light source based on the second light to obtain a wafer image; the detection module is used to detect the wafer image to obtain a defect detection result of the wafer.

[0024] In some embodiments, the aforementioned light source may include an object or device capable of emitting light, and the aforementioned light source may be used to provide light. In some embodiments, the aforementioned wavelength range may be a range of light wavelengths, and the interval length of the aforementioned preset wavelength range may be greater than 2000nm (e.g., 2150nm, 2300nm, or 2310nm, etc.). It is understandable that the aforementioned light source may include a halogen tungsten light source, a deuterium halogen two-in-one light source, a full-band light source, a wide-band light source, and / or a xenon light source, etc. Further, when the aforementioned light source is a halogen tungsten light source, its interval length may be 2150nm, when the aforementioned light source is a deuterium halogen two-in-one light source, its interval length may be 2310nm, when the light source is a full-band light source, its interval length may be 29650nm, and when the light source is a wide-band light source, its interval length may be 2300nm.

[0025] In some embodiments, the wavelength range of the aforementioned tungsten halogen light source can cover visible light and near-infrared light sources, and its wavelength range can be 350-2500nm, its color temperature is relatively stable, the spectrum range is wide, and the spectrum is continuous and smooth in the full spectrum range. The aforementioned deuterium-halogen two-in-one light source can combine a deuterium lamp and a halogen lamp, wherein the deuterium lamp can emit deep ultraviolet to ultraviolet light (e.g., 190nm-400nm), and the halogen lamp can cover the visible light to near-infrared spectrum range (e.g., 300nm-2500nm). The combination of the two can achieve continuous emission of a wide spectrum from deep ultraviolet to near infrared, so that the deuterium-halogen two-in-one light source can provide a comprehensive and uniform spectral output in spectral analysis. The aforementioned full-band light source can be formed by combining a halogen lamp and a deuterium lamp, which can cover the far-infrared spectrum range from 350nm to 30um. The aforementioned wide-band light source can be formed by combining a deuterium lamp and a quartz halogen lamp, and its wavelength range can be 200nm to 2500nm.

[0026] Preferably, the light source module may include a xenon lamp, which may emit light by discharging high-pressure or ultra-high-pressure xenon gas. Specifically, a high-voltage electric field may be applied to the xenon gas to ionize the xenon gas molecules and release free electrons and positive ions, thereby forming a plasma. This plasma may emit ultraviolet radiation with high energy, thereby exciting the xenon atoms to emit visible light and infrared radiation. The xenon lamp may be a continuous spectrum and have a large spectral range.

[0027] It should be understood that when the wavelength of the light source module is small (e.g., less than 200nm), it can be used to detect tiny defects (e.g., defects less than 30nm). When the wavelength of the light source module is within the visible light range (e.g., 400nm-700nm), it can be used to detect larger defects on the wafer surface, such as scratches, cracks, and particles. When the wavelength of the light source module is within the infrared wavelength range, it can penetrate the wafer surface, thereby detecting defects inside the wafer.

[0028] In some embodiments, the preprocessing module may preprocess the first light, so as to adjust the uniformity, brightness, wavelength and intensity of the first light.

[0029] In some embodiments, the aforementioned pre-processing module may include a lens module, and the uniformity of the optical fiber may be adjusted by using a lens module such as a Fresnel lens or a microlens array. Specifically, the aforementioned Fresnel lens can achieve efficient light coupling and uniform distribution at a thinner thickness through a special structural design. By adjusting the distance between the Fresnel lens and the point light source, the uniformity of the light output can be effectively adjusted. The aforementioned microlens array can evenly distribute the light to the target area through the collaborative work of multiple tiny lenses. Furthermore, the pre-processing module may include optical design software (such as Zemax, TracePro, etc.), and the curvature, thickness and material of the lens can be optimized through the aforementioned software, so as to adjust the uniformity and brightness of the light.

[0030] In other embodiments, the pre-processing module may further include a filter module, wherein the filter module may include a bandpass filter, a longpass filter and / or a shortpass filter. Specifically, the bandpass filter may allow light of a specific wavelength or a narrow band to pass through, and light outside the passband is cut off, thereby screening the wavelength of the first light.

[0031] In some other embodiments, the pre-processing module may include a neutral density filter or an absorption filter. Specifically, the neutral density filter may uniformly reduce the transmittance in a certain part of the spectrum, thereby reducing the intensity of the light. The absorption filter may utilize a specific material to have a strong absorption effect on light of a specific wavelength, thereby reducing the intensity of the light. For example, a red glass filter can only transmit red light and absorb light of other colors.

[0032] In some embodiments, the camera module may include an industrial camera, a high-resolution global shutter camera, or an industrial area scan camera, etc. The industrial camera may capture images of target objects using image sensors, and may evaluate product quality, size, appearance, and other characteristics through image processing and analysis techniques.

[0033] In some embodiments, the aforementioned camera module can be used to photograph the wafer based on the second light, so that a wafer image can be obtained. Specifically, after the aforementioned second light is irradiated onto the aforementioned wafer, the aforementioned wafer can reflect and / or scatter the aforementioned second light, and after the aforementioned second light is reflected and / or scattered by the wafer, a second reflected light and / or a second scattered light can be obtained. Furthermore, by setting up a camera module, the aforementioned second reflected light and / or the second scattered light can be captured and converted into an electrical signal, thereby generating one or more wafer images.

[0034] In some embodiments, the wafer can be inspected using bright field detection. Specifically, the second light can be irradiated perpendicular to the surface of the wafer. When there are particles, scratches or other defects on the wafer, part of the light can be scattered, thereby changing the intensity of the second reflected light. The scattered light and reflected light can be captured and imaged by the camera module, so that one or more dark spots appear on the wafer image. It is understandable that the one or more dark spots can be defects on the wafer at this time.

[0035] In some embodiments, the wafer can also be inspected using a dark field detection method. Specifically, the second light can be irradiated at an angle to the surface of the wafer, and when the light encounters a defect, scattered light will be generated. These scattered lights can be captured by the camera module, and the reflected light can be excluded by the camera module. At this time, a dark background can be formed in the wafer image, and a bright spot can be formed on the dark background, which can enhance the contrast between the defects and the normal parts of the wafer. It can be understood that the bright spot in the wafer image at this time can be a defect of the wafer.

[0036] In some embodiments, the aforementioned detection module can detect the aforementioned wafer image, so as to obtain the defect detection result of the wafer. The aforementioned detection module can identify defects through image processing algorithms or deep learning models. Specifically, detection can be performed through traditional visual algorithms (such as edge detection or threshold segmentation algorithms), deep learning algorithms (such as convolutional neural networks, which can automatically learn features in images, identify and classify defects) or image difference algorithms.

[0037] By setting the aforementioned light source module, the wavelength range of the light waves emitted by the light source module can be made larger, the wafer can be inspected within different wavelength ranges, and a variety of different defects can be detected, thereby improving the efficiency of wafer inspection. Furthermore, by setting the first adjustment module and the second adjustment module, improving the uniformity of the light can make the imaging have better contrast and clarity, and improving the brightness of the light can improve the signal-to-noise ratio, making the defect signal more obvious, thereby improving the precision and accuracy of the inspection.

[0038] Figure 2 An exemplary light path simulation diagram of preprocessing the first light in some embodiments of the present application is shown. Figure 2 As shown, the preprocessing module includes a first adjustment module and a second adjustment module; wherein the first adjustment module is used to couple the first light to obtain a first coupled light; and the second adjustment module is used to adjust the first coupled light to obtain a second light.

[0039] In some embodiments, the first adjustment module can be used to couple the first light, so as to adjust the uniformity and brightness of the first light.

[0040] Specifically, the first adjustment module may include a lens module, wherein the uniformity of the optical fiber can be adjusted by using a lens module such as a Fresnel lens or a microlens array. Specifically, the aforementioned Fresnel lens can achieve efficient light coupling and uniform distribution at a relatively thin thickness through a special structural design. By adjusting the distance between the Fresnel lens and the point light source, the uniformity of the light output can be effectively adjusted. The aforementioned microlens array can distribute light evenly to the target area through the coordinated work of multiple tiny lenses. The microlens array can be designed into different shapes and arrangements to meet different uniformity requirements. When it is necessary to adjust the uniformity of the light, the microlens array can be placed between the light source and the target area, and the uniformity of the light can be optimized by adjusting the position and angle of the microlens array.

[0041] Furthermore, the preprocessing module may include optical design software (such as Zemax, TracePro, etc.), and the curvature, thickness and material of the lens may be optimized through the aforementioned software, so that the uniformity and brightness of the light may be adjusted. In some embodiments, the second adjustment module may adjust the first light, so that the first light may be screened, and the first light whose wavelength is within the preset wavelength range and the first light whose intensity is within the preset intensity range may be retained, and the light whose wavelength is not within the preset wavelength range or whose intensity is not within the preset intensity range may be filtered out.

[0042] Specifically, when the first light is screened in a wavelength band, a filter module can be used, wherein the aforementioned filter module can include a bandpass filter, a longpass filter and / or a shortpass filter. Specifically, the bandpass filter can allow light of a specific wavelength or a narrow band to pass through, and light outside the passband is cut off. For example, the central wavelength of the BP808-10 filter is 808nm, and the half bandwidth is 10nm, which can allow light from 803nm to 813nm to pass through. Further, the longpass filter can allow light longer than the selected wavelength to pass through, while light shorter than the wavelength is cut off. For example, the LP-700 filter allows light above 700nm to pass through. Furthermore, the shortpass filter can allow light with a wavelength less than the selected wavelength to pass through, while light with a wavelength greater than the wavelength is cut off.

[0043] In some embodiments, when screening the first light in terms of intensity, the pre-processing module may include a neutral density filter or an absorption filter. Specifically, the neutral density filter may uniformly reduce the transmittance in a certain part of the spectrum, thereby reducing the intensity of the light. The absorption filter may utilize a specific material to have a strong absorption effect on light of a specific wavelength, thereby reducing the intensity of the light. For example, a red glass filter can only transmit red light and absorb light of other colors.

[0044] It is understandable that after the first light is adjusted by the first adjustment module, its uniformity and brightness are greatly improved. Further, after the first light passes through the second adjustment module, the light waves in the first light whose intensity and wavelength meet the requirements can be retained after screening.

[0045] By preprocessing the first light through the preprocessing module, a suitable wavelength band can be selected, thereby reducing background noise and improving the signal-to-noise ratio of the defect signal, thereby reducing false detection and missed detection. Furthermore, the increased light source intensity can ensure that the defect signal is strong enough, thereby improving the sensitivity of detection. Furthermore, the uniform light source can ensure consistent lighting conditions across the entire wafer surface, thereby improving the consistency and reliability of the detection results.

[0046] Figure 3 An exemplary block diagram of a detection system according to some other embodiments of the present application is shown; Figure 3 As shown, the defect detection system further includes a cooling module, which is connected to the light source module and is used to cool the light source module.

[0047] It is understandable that the aforementioned light source module can generate a large amount of heat during operation, which may cause the performance of the light source to decline and affect the accuracy of the detection results. In some embodiments, the cooling module may include a semiconductor refrigerator (e.g., a Peltier cooler), an air cooling component, a liquid cooling component, and / or a heat pipe cooling component. Specifically, by using a semiconductor refrigerator, cooling can be achieved through the thermoelectric effect, and the temperature of the light source can be accurately controlled. Further, by using an air cooling component, hot air can be discharged by a fan to reduce the temperature of the light source. Further, by using a liquid cooling component, the heat generated by the light source can be absorbed and taken away by circulating a coolant (e.g., deionized water, ethylene glycol solution, etc.), thereby achieving cooling. Further, a heat pipe cooling component can also be used, and heat can be transferred from the hot end to the cold end through the phase change heat transfer principle, thereby achieving cooling of the light source.

[0048] By setting the cooling module, the light source module can be cooled, thereby ensuring that the light source operates at an optimal operating temperature, thereby improving the accuracy of the detection result and preventing the light source module from being damaged due to excessive temperature.

[0049] In some embodiments, the defect detection system further includes a trigger module; wherein the trigger module is electrically connected to the camera module and the light source module, and is used to enable the camera module and the light source module to operate synchronously.

[0050] In some embodiments, the camera module may include an industrial camera, a high-resolution global shutter camera, or an industrial area scan camera, etc. The industrial camera may capture images of target objects using image sensors, and may evaluate product quality, size, appearance, and other characteristics through image processing and analysis techniques.

[0051] In some embodiments, the aforementioned trigger module may include a hardware module, a PLC trigger module, an external synchronization trigger module, a strobe controller, and an external signal trigger module.

[0052] In some embodiments, the hardware trigger module may include a strobe controller and an external trigger signal generator. Specifically, the strobe controller may trigger the xenon lamp and the camera simultaneously through an external signal to ensure that the two work synchronously. The external trigger signal generator may provide an accurate trigger signal to ensure synchronization between the xenon lamp and the camera.

[0053] In some embodiments, the aforementioned PLC trigger module can accurately control the trigger signals of the strobe drive and the camera to ensure that the two are triggered synchronously. In other embodiments, the external synchronization trigger module may include using an external synchronization signal to trigger the camera and the xenon lamp to ensure that the two are synchronized. Specifically, the aforementioned external synchronization signal may include a frame synchronization signal (FrameSynchronization, FSYNC) or a frame synchronization input signal (Frame Synchronization Input, FSIN), which may be a pulse that can be driven to a high level when starting to capture each frame.

[0054] In some embodiments, the aforementioned brightening strobe controller can provide a camera synchronization signal output, which can be used to synchronize the camera shooting with the light source, wherein the rising edge can trigger the camera. In some embodiments, the external signal trigger module can include using an external FSYNC signal to trigger the camera sensor, which can achieve high-precision synchronization.

[0055] The trigger module can effectively achieve synchronization between the xenon lamp strobe and the camera photo trigger, ensuring high-quality image data when detecting wafer defects.

[0056] In some embodiments, the first adjustment module includes a fiber coupler, a grating coupler and / or a lens module.

[0057] In some embodiments, the optical fiber coupler can achieve accurate distribution of optical signals based on the coupling effect of optical waveguides by precisely controlling the spacing, length, and refractive index of the waveguides, thereby adjusting the uniformity of the light. Furthermore, by adjusting the coupling ratio, the intensity of the optical signal at each output port can be controlled, thereby adjusting the intensity of the light.

[0058] In some embodiments, the grating structure of the grating coupler can optimize the uniformity of the light by adjusting parameters such as the grating period, duty cycle, and etching depth. For example, by designing a special structure, such as a tapered waveguide, the uniformity of the light can be improved. Furthermore, a free-form surface lens coupler can also be designed to evenly distribute the light on the end face of the fiber bundle, thereby improving the illumination uniformity of the target surface. It should be understood that the grating coupler can also adjust the intensity of the light. Specifically, the coupling efficiency of the grating coupler can affect the distribution ratio of the input optical signal between the output ports. The coupling efficiency can be controlled by adjusting parameters such as the etching depth and period of the grating, thereby adjusting the intensity of the light.

[0059] In some embodiments, the aforementioned lens module may include a Fresnel lens, a microlens array lens module, etc. Specifically, the aforementioned Fresnel lens can achieve efficient light coupling and uniform distribution at a relatively thin thickness through a special structural design. By adjusting the distance between the Fresnel lens and the point light source, the uniformity of the light output can be effectively adjusted. The aforementioned microlens array lens module can distribute the light evenly to the target area through the collaborative work of multiple tiny lenses. The microlens array lens module can be designed into different shapes and arrangements to meet different uniformity requirements. When it is necessary to adjust the uniformity of the light, the microlens array can be placed between the light source and the target area, and the uniformity of the light can be optimized by adjusting the position and angle of the microlens array.

[0060] Figure 4 FIG. 2 shows an exemplary block diagram of a defect detection system according to some other embodiments of the present application. Figure 4 As shown, the defect detection system further includes a driving module, which is electrically connected to the light source module and is used to make the xenon lamp strobe and light up.

[0061] In some embodiments, the aforementioned driving module may include a high-voltage trigger circuit, a pulse generating circuit, a signal generator, a trigger base, a power supply module and a relay module.

[0062] Specifically, the aforementioned high-voltage trigger circuit may include a boost energy storage circuit and a high-voltage discharge circuit. In some embodiments, when the high-voltage trigger circuit is a boost energy storage circuit, it can boost the input voltage (e.g., 15V) to a high voltage (e.g., 300V) through a transformer to charge the capacitor for energy storage. Its front-stage circuit can use a feedback control circuit composed of a voltage stabilizer (e.g., TL431) and an optocoupler to achieve high-voltage regulated output. In other embodiments, when the high-voltage trigger circuit is a high-voltage discharge circuit, the high-voltage discharge circuit may include a switch tube, an energy storage capacitor, and a transformer. When the high-voltage drive module receives a trigger signal, the switch tube is turned on, and the energy storage capacitor is discharged through the transformer at high voltage to generate a high-voltage pulse, thereby ionizing the xenon molecules and generating light.

[0063] In some embodiments, the aforementioned pulse generating circuit may include a pre-combustion stage and a follow-up discharge stage. Specifically, in the pre-combustion stage, the switch tube can be turned on, and the input high voltage is directly applied to both ends of the pulse xenon lamp to completely ionize the xenon gas in the lamp tube and maintain the xenon gas molecules in a pre-ionized state. In the follow-up discharge stage, after the switch tube is turned off, the diode provides a follow-up circuit for the parasitic inductance on the line to prevent the parasitic inductance on the line from generating high voltage to break down the power device. In the follow-up discharge stage, the two staggered parallel circuits in the pulse generating circuit output constant current pulses to maintain the lighting state of the xenon lamp.

[0064] In some embodiments, the aforementioned signal generator may include an internal signal generator and an external signal generator. When the external signal generator is selected, an external signal generator is required to provide a trigger signal for the flash xenon lamp, and the light emission frequency of the flash xenon lamp is controlled by adjusting the frequency of the signal generator. When the internal signal generator is selected, it can be adjusted by rotating the knob of the internal signal generator.

[0065] In some embodiments, the trigger base can be used to mount and fix the trigger, thereby ensuring a stable electrical connection between the trigger and the xenon lamp. It should be understood that the trigger base can include necessary electrical interfaces and mechanical fixing devices. In some embodiments, the power module can include a DC switching power module, which can be used to supply power.

[0066] In some embodiments, the relay module can be used for triggering time control. The closing of the relay can control the triggering time of the trigger. After the boost circuit works, the voltage can rise rapidly. When the voltage value of the xenon lamp is reached, the relay closes, giving a trigger signal to drive the trigger to work, instantly generating a high voltage of nearly 10,000 volts, breaking through the xenon gas, and thus completing the ignition of the xenon lamp.

[0067] In some embodiments, the defect detection system may further include a capacitor module, which is electrically connected to the light source module and is used to control the output intensity of the xenon lamp.

[0068] In some embodiments, the aforementioned capacitor module can be arranged in a discharge circuit, and the capacitor module can include a capacitor, which can release energy during the discharge process and provide it to the xenon lamp, so that it emits a high-intensity flash. In the discharge circuit, when the discharge voltage remains unchanged, increasing the discharge capacitance, the single pulse energy increases, the light output increases, and the output pulse width (i.e., the luminous time) increases, but its stability is worse. When the main discharge voltage remains unchanged, reducing the discharge capacitance, the single pulse energy decreases, the light output decreases, and the output pulse width (luminous time) decreases, but the stability is better.

[0069] It is understandable that the output intensity of the xenon lamp can be controlled by the aforementioned capacitor module. When inspecting the wafer, by adjusting the light source intensity, the contrast between the defects on the wafer surface and the normal area can be enhanced, making the defects easier to identify. In addition, by properly adjusting the light source intensity and avoiding long-term use of excessively high current, the loss of the light source can be reduced and the service life of the light source can be extended.

[0070] In some embodiments, the second adjustment module includes a first color wheel and a second color wheel; wherein the first color wheel includes a band filter color wheel for filtering the first coupled light in a band; and the second color wheel includes an intensity filter color wheel for filtering the first coupled light in intensity.

[0071] In some embodiments, the aforementioned band filter color wheel may include a total reflection filter, a cold reflection filter, and a transmission filter. Specifically, the total reflection filter has a full spectrum output characteristic, and its output spectrum range may be 260nm~2500nm. This filter can reflect the light of the entire band of the emitted light of the xenon lamp bulb according to the total reflection principle, and finally send it to the light outlet. In some embodiments, the spectral output range of the reflection filter may be 260 nm ~ 780nm. This filter will send part of the infrared light to the heat sink of the light source steering head in a transmission manner, and finally release it in the form of thermal radiation; and reflect the remaining ultraviolet and visible light according to the total reflection principle, and finally send it to the light outlet. In some embodiments, the aforementioned transmission filter can filter out ultraviolet light or visible light in the spectrum of the xenon lamp light source.

[0072] In some embodiments, the aforementioned intensity filter color wheel may include a neutral density filter, an attenuation plate, a multi-band filter, etc. Specifically, a neutral density filter can uniformly reduce the transmittance in a certain part of the spectrum, thereby reducing the intensity of light. An attenuation plate can be used to reduce the intensity of light. By selecting filters with different attenuation coefficients, the output intensity of the light source can be precisely controlled. A multi-band filter can allow light of multiple different wavelength regions to pass through.

[0073] By setting the aforementioned band filter color wheel and intensity filter color wheel, light of a specific wavelength can be selected to improve the sensitivity and accuracy of detection. In addition, the intensity of the light source can be flexibly adjusted according to actual detection needs to improve the flexibility and adaptability of detection. Furthermore, it can also prevent strong light sources from damaging the camera's sensor or optical elements, ensuring imaging quality.

[0074] In some embodiments, the defect detection system includes an optical fiber module, and the optical fiber module is used to export the first coupled light to the lens of the camera module.

[0075] Specifically, the aforementioned optical fiber module may include an optical fiber coupling component and an optical fiber component. The optical fiber coupling component can efficiently couple the light emitted by the xenon lamp light source into the optical fiber, thereby ensuring the transmission efficiency of light energy. The optical fiber component can transmit the coupled optical signal to the target area. Optical fiber has the characteristics of high transmission efficiency and low loss, and can transmit the optical signal from the light source to the front of the lens. When the light reaches the target area, the optical signal is focused onto the surface of the wafer through the lens. The function of the lens is to focus the optical signal transmitted by the optical fiber to a specific area, ensuring the uniform distribution and high brightness output of the optical signal.

[0076] In some embodiments, the aforementioned defect detection system further includes a display module, and the display module is used to display the status of the light source module.

[0077] In some embodiments, the aforementioned display module may include a liquid crystal display screen, and the aforementioned display module may display the image captured by the detection equipment to facilitate observation and analysis by the operator. Furthermore, the aforementioned display module may also mark and highlight the detected defects. It helps the operator to quickly identify and locate defects and improve the detection efficiency. Furthermore, the aforementioned display module can provide feedback to help the operator adjust the detection parameters and equipment settings. For example, if the number of defects detected is abnormal, the operator can adjust the light source intensity, camera parameters, etc. in time to optimize the detection effect.

[0078] In some embodiments, the aforementioned display module can be integrated with data analysis software to display statistical information and analysis results of defects, for example, the number, type, distribution and other information of defects.

[0079] By setting up the display module, the efficiency and accuracy of wafer defect detection can be effectively improved, ensuring the reliability and stability of the detection results.

[0080] Figure 5 An exemplary flow chart of a method 500 for a wafer defect detection system according to some embodiments of the present application is shown. Figure 5As shown, the defect detection system includes a light source module, a preprocessing module, a camera module and a detection module, and the method 500 includes: S501 using the light source module to provide a first light, wherein the wavelength range of the first light is greater than a preset wavelength range; S502 using the preprocessing module to preprocess the first light to obtain a second light; S503 based on the second light, using the camera module to shoot the light source to obtain a wafer image; S504 using the detection module to detect the wafer image to obtain a defect detection result of the wafer.

[0081] In some embodiments, the aforementioned light source may include an object or device capable of emitting light, and the aforementioned light source module may be used to provide light. In some embodiments, the aforementioned wavelength range may be a range of light wavelengths, and the interval length of the aforementioned preset wavelength range may be 1000nm. It is understood that the aforementioned light source may include a tungsten halogen light source, a deuterium halogen two-in-one light source, a full-band light source, a wide-band light source, and / or a xenon light source, etc.

[0082] In some embodiments, the aforementioned preprocessing module may include a first adjustment module and a second adjustment module. The aforementioned first adjustment module may include a fiber coupler, a photoelectric coupler, a grating coupler and / or a lens module, etc. Using the first adjustment module to couple the light may include adjusting the emission port of the light source module so that the light emitted by the light source module can pass through the center position of the first adjustment module, which can ensure that the uniformity and brightness of the light can be evenly adjusted, thereby obtaining the first light. In other embodiments, a diffusion material may be added between the lens and the target area, and the uniformity of the light may be optimized by adjusting the thickness and position of the diffusion material.

[0083] Furthermore, coupling the first light may also include adding a diffusion material between the lens and the target area, and adjusting the thickness and position of the diffusion material to optimize the uniformity of the light. Furthermore, the curvature, thickness and material of the lens may be optimized by optical design software (such as Zemax, TracePro, etc.), so as to adjust the uniformity of the light.

[0084] In some embodiments, coupling the first light may also include using an anti-reflection coating or adjusting the position of a lens. Specifically, a lens with an anti-reflection coating may be selected, or an anti-reflection coating may be plated on the surface of an existing lens, thereby reducing reflection on the lens surface, increasing the transmittance of light, and thus increasing the brightness of the lens. Furthermore, by adjusting the position of the lens, the light may be more concentratedly irradiated to the target area, thereby increasing the brightness.

[0085] In some embodiments, the second adjustment module may include a filter module, wherein the filter module may include a bandpass filter, a longpass filter and / or a shortpass filter. Using the second adjustment module to adjust the first coupling light may include adjusting the position of the emission port of the light source module and the first module, so that the first coupling light can pass through the center position of the second adjustment module, thereby adjusting the first coupling light to obtain the second light.

[0086] By setting the aforementioned light source module, a variety of different defects can be detected in a single test, thereby improving the efficiency of wafer testing. By setting the first adjustment module and the second adjustment module, improving the uniformity of light can make the imaging have better contrast and clarity, thereby improving the precision and accuracy of the test.

[0087] Figure 6 FIG. 6 is an exemplary block diagram of an electronic device 600 for a wafer defect detection system according to some embodiments of the present application. Figure 6 As shown, the electronic device 600 may include a processor 610 and a memory 620, wherein the processor 610 and the memory 620 communicate with each other via a bus. The memory 620 stores computer instructions for simulating a defect detection system for a wafer. When the aforementioned computer instructions are executed by the processor 610, the electronic device 600 implements the method steps described in the above text in combination with the accompanying drawings: using a light source module to provide a first light, wherein the wavelength range of the first light is greater than a preset wavelength range; using a preprocessing module to preprocess the first light to obtain a second light; based on the second light, using the camera module to shoot the light source to obtain a wafer image; using a detection module to detect the wafer image to obtain a defect detection result of the wafer.

[0088] According to the above description in combination with the accompanying drawings, those skilled in the art can also understand that the embodiments of the present application can also be implemented by software programs. Therefore, the present application also provides a computer-readable storage medium. The computer-readable storage medium stores computer-readable instructions for a wafer defect detection system, and when the computer-readable instructions are executed by one or more processors, the present application is implemented in combination with Figure 5 A simulation method for a defect inspection system for wafers is described.

[0089] The computer-readable storage medium may be any suitable magnetic storage medium or magneto-optical storage medium, such as Resistive Random Access Memory (RRAM), Dynamic Random Access Memory (DRAM), Static Random Access Memory (SRAM), Enhanced Dynamic Random Access Memory (EDRAM), High-Bandwidth Memory (HBM), Hybrid Memory Cube (HMC), etc., or any other medium that can be used to store the required information and can be accessed by the application, module, or both. Any such computer storage medium may be part of the device or accessible or connectable to the device. Any application or module described in the present invention may be implemented using computer-readable / executable instructions that may be stored or otherwise maintained by such a computer-readable medium.

[0090] It should also be understood that any module, unit, component, server, computer, terminal or device that executes instructions of the present invention examples may include or otherwise access computer-readable media, such as storage media, computer storage media or data storage devices (removable and / or non-removable) such as disks, optical disks or tapes. Computer storage media may include volatile and non-volatile, removable and non-removable media implemented in any method or technology for storing information, such as computer-readable instructions, data structures, program modules or other data.

[0091] In summary, through the solution of the present application, the wavelength range of the light wave emitted by the light source module can be made larger, and a variety of different defects can be detected in a single detection, thereby improving the efficiency of wafer detection. Furthermore, through the setting of the first adjustment module and the second adjustment module, improving the uniformity of the light can make the imaging have better contrast and clarity, and improving the brightness of the light can improve the signal-to-noise ratio, making the defect signal more obvious, thereby improving the precision and accuracy of the detection.

[0092] Although multiple embodiments of the present application have been shown and described herein, it is obvious to those skilled in the art that such embodiments are provided only by way of example. Those skilled in the art can think of many changes, modifications and alternatives without departing from the thought and spirit of the present application. It should be understood that in the process of practicing the present application, various alternatives to the embodiments of the present application described herein can be adopted. The attached claims are intended to limit the scope of protection of the present application, and therefore cover equivalents or alternatives within the scope of these claims.

Claims

1. A defect detection system for a wafer, characterized in that: The defect detection system includes a light source module, a preprocessing module, a camera module and a detection module; wherein, The light source module is used to provide a first light, wherein the wavelength range of the first light is greater than the preset wavelength range; The preprocessing module is used to preprocess the light to obtain a second light; The camera module is used to photograph the wafer based on the second light to obtain a wafer image; The detection module is used to detect the wafer image to obtain a defect detection result of the wafer.

2. The defect detection system according to claim 1, characterized in that: The pre-processing module includes a first adjustment module and a second adjustment module; wherein, The first adjustment module is used to couple the first light to obtain a first coupled light; The second adjustment module is used to adjust the first coupling light to obtain a second light.

3. The defect detection system according to claim 1, characterized in that: The defect detection system further includes a cooling module, which is connected to the light source module and is used to cool the light source module.

4. The defect detection system according to claim 1, wherein: The defect detection system further includes a trigger module; wherein, The trigger module is electrically connected to the camera module and the light source module, and is used to enable the camera module and the light source module to work synchronously.

5. The defect detection system according to any one of claims 1 to 4, characterized in that: The light source module includes a xenon lamp.

6. The defect detection system according to claim 5, characterized in that: The defect detection system further includes a driving module and a capacitance module; wherein The driving module is electrically connected to the light source module, and is used to make the xenon lamp strobe and light up; The capacitor module is electrically connected to the light source module and is used to control the output intensity of the xenon lamp.

7. The defect detection system according to claim 2, characterized in that: The second adjustment module includes a first color wheel and a second color wheel; wherein, The first color wheel comprises a band filter color wheel for filtering the first coupling light in a wavelength band; The second color wheel includes an intensity filter color wheel for filtering the first coupled light in terms of intensity.

8. A method for a defect detection system for a wafer, characterized in that, The defect detection system includes a light source module, a preprocessing module, a camera module, and a detection module. The method includes: Using a light source module to provide a first light, wherein the wavelength range of the first light is greater than a preset wavelength range; Preprocessing the first light using a preprocessing module to obtain a second light; Based on the second light, using the camera module to shoot the light source to obtain a wafer image; The wafer image is inspected using an inspection module to obtain a defect inspection result of the wafer.

9. An electronic device, characterized in that: include: processor; as well as A memory storing program instructions for a wafer defect detection system, wherein when the program instructions are executed by the processor, the electronic device executes the method according to claim 8.

10. A computer-readable storage medium, characterized in that The system stores program instructions for a wafer defect detection system, and when the program instructions are executed by a processor, the method according to claim 8 is implemented.

Images