Wafer electron beam scanning method and related product

Abstract

The invention relates to the technical field of wafer detection, in particular to a wafer electron beam scanning method, a computer readable storage medium, a computer program product and computer equipment. The wafer electron beam scanning method comprises the following steps: controlling a wafer supporting device to drive a wafer to rotate around the center of the wafer, and controlling an electron beam scanning device to scan the surface of the wafer; after the wafer rotates for at least one circle, the wafer supporting device is controlled to drive the wafer to move by a set step pitch in the set direction of the wafer, so that a scanning gun of the electron beam scanning device moves by the set step pitch towards the center of the wafer or away from the center of the wafer relative to the wafer; and the wafer supporting device is controlled again to drive the wafer to rotate around the center of the wafer, and the electron beam scanning device is controlled to scan the surface of the wafer. The problem that an existing wafer electron beam scanning method is low in scanning efficiency is solved.

Description

Technical Field

[0001] The present invention relates to the field of wafer detection technology, and in particular to a wafer electron beam scanning method, a computer-readable storage medium, a computer program product and a computer device. Background Art

[0002] At present, wafer electron beam scanning is an important detection technology in the semiconductor industry. It mainly uses electron beams to scan the surface of wafers, uses high-energy electrons to interact with the materials on the surface of wafers, and stimulates secondary electrons and other information. Then, through the collection and analysis of this information, an image of the wafer surface is formed, thereby realizing the detection of wafer defects, critical dimensions, etc. Wafer electron beam scanning technology has the advantages of high resolution, high sensitivity and non-destructiveness.

[0003] However, the existing wafer electron beam scanning adopts a Z-shaped scanning method. The Z-shaped scanning method includes: starting from the upper right corner of the wafer, scanning parallel to the right, moving down one unit when reaching the right boundary, and scanning parallel to the left, moving down one unit when reaching the left boundary, and repeating the above process until the entire wafer surface is scanned. In the above scanning process, the scanning method has a large stroke, and the moving distance along the X-axis and Y-axis directions are equal to the diameter of the wafer. Since the stroke is an important parameter in the electron beam detection system, it directly affects the detection range and efficiency. Therefore, the above scanning method has a large stroke, which leads to the problems of long scanning time and low efficiency. Summary of the invention

[0004] In view of the above problems, the present invention is proposed to provide a wafer electron beam scanning method, a computer-readable storage medium, a computer program product and a computer device that overcome the above problems or at least partially solve the above problems.

[0005] An object of the present invention is to improve the scanning efficiency of an electron beam on a wafer.

[0006] A further object of the present invention is to achieve differentiated scanning of different types of regions on the wafer surface.

[0007] A further object of the present invention is to reduce the operating time of the electron beam to save scanning costs.

[0008] Specifically, the present invention provides a wafer electron beam scanning method, comprising:

[0009] Controlling the wafer support device to drive the wafer to rotate around the center of the wafer, and controlling the electron beam scanning device to scan the surface of the wafer;

[0010] After the wafer rotates at least one circle, the wafer support device is controlled to drive the wafer to translate along a set direction by a set step distance, and the set direction is the direction of a line connecting a scanning point of the scanning gun of the electron beam scanning device on the wafer and the center of the wafer.

[0011] Optionally, before the step of controlling the wafer supporting device to drive the wafer to rotate around the center of the wafer and controlling the electron beam scanning device to scan the surface of the wafer, the method further includes:

[0012] Acquire the area type of the area to be scanned on the surface of the wafer; wherein there are multiple area types, and the scanning levels of each area type are different;

[0013] Adjusting scanning parameters of the electron beam scanning device according to the area type, and / or adjusting the number of revolutions that the wafer supporting device drives the wafer to rotate around the center of the wafer;

[0014] Scanning is performed according to the adjusted scanning parameters and / or the number of turns.

[0015] Optionally, before the step of obtaining the area type of the area to be scanned on the surface of the wafer, the method further includes:

[0016] Dividing the surface of the wafer into a plurality of annular areas to be scanned according to the set step size;

[0017] The area type of each of the areas to be scanned is determined.

[0018] Optionally, the scanning parameter includes a scanning line speed, and the scanning line speed corresponding to the area type with a high scanning level is greater than the scanning line speed corresponding to the area type with a low scanning level;

[0019] The number of circles corresponding to the area type with a high scanning level is greater than the number of circles corresponding to the area type with a low scanning level.

[0020] Optionally, the step of determining the area type of each area to be scanned includes:

[0021] Obtain wafer historical inspection data and / or wafer product requirements;

[0022] The area type of each area to be scanned on the wafer is determined according to the historical inspection data of the wafer and / or the product requirements of the wafer.

[0023] Optionally, before the step of controlling the wafer supporting device to drive the wafer to rotate around the center of the wafer and controlling the electron beam scanning device to scan the surface of the wafer, the method further includes:

[0024] Obtain the radius of the wafer and the scanning width of the electron beam;

[0025] The set step length is determined according to the radius and the scanning width; the set step length is less than or equal to the scanning width.

[0026] Optionally, before the step of controlling the wafer supporting device to drive the wafer to rotate around the center of the wafer and controlling the electron beam scanning device to scan the surface of the wafer, the method further includes:

[0027] Acquiring an initial scanning position on the surface of the wafer, wherein the initial scanning position is located at an edge or a center of the wafer;

[0028] The wafer supporting device is controlled to drive the wafer to move to a position where a scanning point of the scanning gun on the wafer coincides with the initial scanning position.

[0029] Optionally, the step of controlling the wafer supporting device to drive the wafer to move to a position where a scanning point of the scanning gun on the wafer coincides with the initial scanning position comprises:

[0030] Using a distance measuring device, measuring the distance from the projection point of the scanning gun on the plane where the wafer surface is located to the initial scanning position;

[0031] According to the distance, the wafer supporting device is controlled to drive the wafer to move to a position where a scanning point of the scanning gun on the wafer coincides with the initial scanning position.

[0032] According to another aspect of the present invention, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the steps of any one of the above-mentioned wafer electron beam scanning methods are implemented.

[0033] According to another aspect of the present invention, a computer program product is provided, comprising a computer program, which implements the steps of any one of the above-mentioned wafer electron beam scanning methods when executed by a processor.

[0034] According to yet another aspect of the present invention, a computer device is provided, which includes a memory, a processor, and a computer program stored in the memory, and the processor executes the computer program to implement any step of the wafer electron beam scanning method.

[0035] In the wafer electron beam scanning method of the present invention, an electron beam scanning device and a wafer supporting device are used to realize the concentric ring scanning of the wafer surface by the electron beam scanning device through the rotation of the wafer around the center of the wafer and the movement of the wafer along the radial direction of the wafer. During the scanning process, the total moving distance along the radial direction of the wafer is not greater than the radius of the wafer. Compared with the zigzag scanning method of the prior art, the present application greatly reduces the moving distance along the radial direction of the wafer, thereby reducing the scanning stroke and improving the scanning efficiency of the wafer.

[0036] Based on the following detailed description of specific embodiments of the present invention in conjunction with the accompanying drawings, those skilled in the art will become more aware of the above and other objects, advantages and features of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Hereinafter, some specific embodiments of the present invention will be described in detail in an exemplary and non-limiting manner with reference to the accompanying drawings. The same reference numerals in the accompanying drawings indicate the same or similar components or parts. It should be understood by those skilled in the art that these drawings are not necessarily drawn to scale. In the accompanying drawings:

[0038] Figure 1 is a schematic flow chart of a wafer electron beam scanning method according to an embodiment of the present invention;

[0039] Figure 2 is a schematic flow chart of a wafer electron beam scanning method according to an embodiment of the present invention;

[0040] Figure 3 is a schematic flow chart of a wafer electron beam scanning method according to an embodiment of the present invention;

[0041] Figure 4 is a schematic flow chart of determining a set step length of a wafer electron beam scanning method according to an embodiment of the present invention;

[0042] Figure 5 is a schematic diagram of a scanning width and a set step distance on a wafer according to an embodiment of the present invention;

[0043] Figure 6 is a schematic diagram of a scanning width and a set step distance on a wafer according to an embodiment of the present invention;

[0044] Figure 7 is a schematic flow chart of a wafer electron beam scanning method according to an embodiment of the present invention;

[0045] Figure 8 is a schematic flow chart of a wafer electron beam scanning method according to an embodiment of the present invention;

[0046] Fig. 9is a schematic flow chart of determining the area type of each area to be scanned in a wafer electron beam scanning method according to an embodiment of the present invention;

[0047] Fig.10 is a schematic flow chart of a wafer electron beam scanning method according to an embodiment of the present invention;

[0048] Fig.11 is a schematic diagram of a computer-readable storage medium according to an embodiment of the present invention;

[0049] Fig.12 is a schematic diagram of a computer program product according to an embodiment of the present invention; and

[0050] Fig.13 is a schematic diagram of a computer device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0051] Figure 1 FIG. 1 is a schematic flow chart of a wafer electron beam scanning method according to an embodiment of the present invention. Figure 1 As shown, an embodiment of the present invention provides a wafer electron beam scanning method, which is implemented based on an electron beam scanning device and a wafer supporting device. The method may include the following steps:

[0052] S100, controlling the wafer support device to drive the wafer to rotate around the center of the wafer, and controlling the electron beam scanning device to scan the surface of the wafer;

[0053] S200, after the wafer rotates at least one circle, control the wafer support device to drive the wafer to translate along a set direction by a set step distance, the set direction being the direction of a line connecting a scanning point of a scanning gun of an electron beam scanning device on the wafer and the center of a circle of the wafer; that is, control the wafer support device to drive the wafer to move along a radial direction of the wafer by a set step distance, so that the scanning gun of the electron beam scanning device moves relative to the wafer toward the center of the wafer or away from the center of the wafer by the set step distance;

[0054] After S200 is finished, S100 is executed again until the entire scanning of the wafer surface is completed.

[0055] Specifically, the wafer electron beam scanning method of this embodiment is implemented based on an electron beam scanning device and a wafer support device. Specifically, the electron beam scanning device includes an electron gun, which is a device for generating, accelerating and converging a high-energy density electron beam flow, and can emit an electron beam with a certain energy, a certain beam flow, a speed and an angle. The wafer support device can drive the wafer to move linearly along the radial direction of the wafer, and can also drive the wafer to rotate around the center of the wafer.

[0056] This embodiment utilizes an electron beam scanning device and a wafer support device, and scans the wafer surface based on a concentric ring scanning method. During the scanning process of this embodiment, the electron beam scanning device scans the wafer surface by rotating the wafer around the center of the wafer and moving the wafer in the radial direction of the wafer. During the scanning process of this embodiment, the total moving distance along the radial direction of the wafer is not greater than the radius of the wafer. Compared with the zigzag scanning method of the prior art, the present application greatly reduces the moving distance along the radial direction of the wafer, thereby reducing the moving stroke and improving the scanning efficiency of the wafer.

[0057] like Figure 2 As shown, in some embodiments of the wafer electron beam scanning method of the present invention, before the step of controlling the wafer support device to drive the wafer to rotate around the center of the wafer and controlling the electron beam scanning device to scan the wafer surface, the wafer electron beam scanning method may further include the following steps:

[0058] S300, obtaining an initial scanning position on the wafer surface, the initial scanning position being located at the edge or center of the wafer; controlling the wafer support device to drive the wafer to move to a position where a scanning point of the scanning gun on the wafer coincides with the initial scanning position.

[0059] Specifically, before executing S100, this embodiment first executes S300. That is, before starting electron beam scanning of the wafer, this embodiment first controls the wafer support device to drive the wafer to move to the initial position, which makes the scanning point of the scanning gun on the wafer coincide with the initial scanning position on the wafer, and then turns on the electron beam scanning device to emit the electron beam, starting with the edge or center of the wafer as the starting point, and starts electron beam scanning of the wafer surface. Since the cost of using an electron beam is relatively high, the electron beam scanning method of this embodiment can reduce the working time of the electron beam, thereby saving scanning costs.

[0060] In some embodiments of the wafer electron beam scanning method of the present invention, the initial scanning position is located at the center of the wafer. In S200, the direction is set to be the direction from the center of the wafer to the edge of the wafer.

[0061] In some embodiments of the wafer electron beam scanning method of the present invention, the initial scanning position is located at the edge of the wafer. In S200, the direction is set to the direction from the edge of the wafer to the center of the wafer.

[0062] Compared with the inside-to-outside scanning method of the previous embodiment, the outside-to-inside scanning method adopted in this embodiment can reduce the time required for the wafer to move to the initial position, thereby reducing the total time required for single wafer detection and improving the detection efficiency of a single wafer.

[0063] like Figure 3As shown, in some embodiments of the wafer electron beam scanning method of the present invention, the control of the wafer support device to drive the wafer to move to a position where the scanning point of the scanning gun on the wafer coincides with the initial scanning position includes:

[0064] S310, using a distance measuring device, measuring the distance from the projection point of the scanning gun on the plane where the wafer surface is located to the initial scanning position;

[0065] S320, according to the distance, controlling the wafer support device to drive the wafer to move to a position where the scanning point of the scanning gun on the wafer coincides with the initial scanning position.

[0066] In this embodiment, under normal circumstances, according to the positional relationship between the scanning gun and the wafer support device, the projection point of the scanning gun on the plane where the wafer surface is located coincides with the line connecting the center of the wafer and the set direction. In the case where the initial scanning position is located at the edge of the wafer, the initial scanning position is arranged to coincide with the line connecting the center of the wafer and the set direction. According to the distance measured by the measuring device, the wafer support device is controlled to drive the wafer to move along the set direction to a position where the scanning point of the scanning gun on the wafer coincides with the initial scanning position. In the case where the initial scanning position is located at the center of the wafer, according to the distance measured by the measuring device, the wafer support device can be controlled to drive the wafer to move along the set direction to a position where the scanning point of the scanning gun on the wafer coincides with the initial scanning position. The distance measuring device can be a laser interferometer or a laser rangefinder. The laser rangefinder mainly uses the reflection time or phase difference of the laser to measure the distance. The laser interferometer is based on the principle of interference and measures the displacement or distance by analyzing the change of the interference fringes of the laser wave. Preferably, the distance measuring device is a laser interferometer, which has the advantages of high precision, small error and high sensitivity. This embodiment utilizes the distance measuring device to enable the wafer to be quickly and accurately moved to the initial position, thereby improving the overall scanning efficiency of the wafer.

[0067] like Figures 4 to 6 As shown, in some embodiments of the wafer electron beam scanning method of the present invention, before the step of controlling the wafer support device to drive the wafer to rotate around the center of the wafer and controlling the electron beam scanning device to scan the wafer surface, the following steps may also be included:

[0068] S410, obtaining the radius of the wafer 50 and the scanning width of the electron beam;

[0069] S420, determining a set step length according to the radius of the wafer 50 and the scanning width of the electron beam; the set step length is less than or equal to the scanning width.

[0070] In this embodiment, before scanning the wafer surface, the step length is first determined according to the radius of the wafer and the scanning width of the electron beam, which is more conducive to balancing the scanning accuracy and scanning efficiency. Further, in this embodiment, the step length is set to be less than or equal to the scanning width, which is more conducive to achieving a complete scan of the wafer surface.

[0071] like Figure 5 As shown, in some optional embodiments of the present invention, the step distance L is set 1 Equal to the scan width L 0 .

[0072] like Figure 6 As shown, in some optional embodiments of the present invention, the step distance L is set 1 Smaller than the scan width L 0 That is, the scanning width is greater than the width of the area to be scanned.

[0073] Furthermore, the difference between the scanning width and the scanning step distance may be 5-15 nm.

[0074] In the above two embodiments, the scanning width of the electron beam can be 80-120 nm (for example, 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, 110 nm, 115 nm or 120 nm). Preferably, the scanning width of the electron beam 120 is 100 nm. Compared with the embodiment in which the step length is set equal to the scanning width, the method of setting the step length smaller than the scanning width is more conducive to improving the scanning quality of the boundary area of ​​the to-be-scanned area.

[0075] like Figure 7 As shown, in some optional embodiments of the present invention, before the step of controlling the wafer supporting device to drive the wafer to rotate around the center of the wafer and controlling the electron beam scanning device to scan the surface of the wafer, the following steps may also be included:

[0076] S610, obtaining the area type of the area to be scanned on the surface of the wafer; wherein there are multiple area types, and the scanning levels of the area types are different;

[0077] S620, adjusting scanning parameters of the electron beam scanning device according to the area type, and / or adjusting the number of revolutions that the wafer supporting device drives the wafer to rotate around the center of the wafer;

[0078] S630, scanning according to the adjusted scanning parameters and / or the number of turns.

[0079] For example, there are two area types, namely the first type and the second type; wherein the scanning level of the first type is greater than the scanning level of the second type. A table of area types of each area to be scanned on the surface of the wafer may be preset inside the scanning device, wherein each area to be scanned in the table is a concentric ring, and the width of the area to be scanned is equal to the set step size. Before scanning each area to be scanned, the area type corresponding to the area to be scanned may be obtained from the above table, and then the scanning parameters of the electron beam scanning device may be adjusted according to the area type, and / or the number of circles that the wafer support device drives the wafer to rotate around the center of the wafer may be adjusted; then the area to be scanned may be scanned according to the adjusted scanning parameters and number of circles.

[0080] Since the design requirements, functional requirements, or manufacturing process requirements of different areas on the wafer surface may be different, and the defect rates of different areas in the historical inspection data of the wafer may be different. Therefore, the scanning requirements of various areas on the wafer surface may be different. For example, areas with high defect rates in the historical inspection data should be scanned intensively; areas that are prone to defects due to design or process, as well as areas with important functions, should be scanned intensively. Using the method of this embodiment, corresponding scanning parameters and / or the number of rotations are executed according to the scanning level of each area to be scanned, so as to meet the scanning accuracy requirements of different areas, and help balance scanning accuracy and scanning efficiency.

[0081] like Figure 8 As shown, in some optional embodiments of the present invention, before the step of obtaining the area type of the area to be scanned on the wafer surface, the following steps may also be included:

[0082] S510, dividing the surface of the wafer into a plurality of annular areas to be scanned according to a set step distance;

[0083] S520: Determine the area type of each area to be scanned.

[0084] Before scanning the wafer, the present embodiment divides the wafer surface into a plurality of annular areas to be scanned, and then determines the area type of each area to be scanned. The width of the area to be scanned is equal to the set step size. Compared with presetting the types of each scanning area inside the scanning device, the present embodiment determines the area type of each area to be scanned before scanning begins, which is more conducive to meeting the latest scanning requirements of the wafer.

[0085] In some optional embodiments of the present invention, the scanning parameters include a scanning line speed, and the scanning line speed corresponding to the area type with a high scanning level is greater than the scanning line speed corresponding to the area type with a low scanning level; the number of circles corresponding to the area type with a high scanning level is greater than the number of circles corresponding to the area type with a low scanning level.

[0086] Since the lower the scanning line speed, the higher the scanning accuracy; and the more the number of rotations, the more scanning times, the higher the scanning accuracy. Therefore, by adjusting the scanning line speed and / or the number of rotations, the specific requirements of the scanning level of different types of scanning areas can be achieved. And the above adjustment method has the advantage of being simple and easy to operate.

[0087] In some optional embodiments of the present invention, the scanning parameter corresponding to the first type is the first scanning line speed, and the number of rotations is the first number of rotations; the scanning parameter corresponding to the second type is the second scanning line speed, and the number of rotations is the second number of rotations. The first scanning line speed is less than the second scanning line speed, and the first number of rotations is equal to the second number of rotations.

[0088] In some optional embodiments of the present invention, the first rotation number is higher than the second rotation number, and the first scanning line speed is equal to the second scanning line speed. For example, when the second rotation number is 1, the first rotation number may be 2 to 10; when the second rotation number is 2, the first rotation number may be 3 to 10.

[0089] In some optional embodiments of the present invention, the first scanning line speed is less than the second scanning line speed, and the first rotation number is greater than the second rotation number. For example, when the second rotation number is 1, the first rotation number may be 2 to 10; when the second rotation number is 2, the first rotation number may be 3 to 10.

[0090] In the above three embodiments, when the first number of rotations is greater than the second number of rotations, the average of multiple scan data can be taken as the scan data of the first type of area to be scanned. In addition, in the above three embodiments, compared with the first two embodiments, the third embodiment adopts adjustments in scanning speed and scanning times, which is more conducive to improving the scanning accuracy corresponding to the first type of area to be scanned.

[0091] In some alternative embodiments of the present invention, the scanning parameters of the electron beam scanning device may further include a scanning angular velocity, which is the rotation speed of the wafer.

[0092] like Fig. 9 As shown, in some embodiments of the present invention, the step of determining the area type of each area to be scanned may include the following steps:

[0093] S521, obtaining wafer historical inspection data and / or wafer product requirements;

[0094] S522, determining the area type of each area to be scanned on the wafer according to the historical inspection data of the wafer and / or the product requirements of the wafer.

[0095] Specifically, the specific method of "determining the area type of each area to be scanned" may include the following three cases:

[0096] The first case: Obtain the historical inspection data of the wafer; determine the area type of each area to be scanned on the wafer surface according to the historical inspection data of the wafer. The historical inspection data can be the inspection data of the previous month, the previous two months, or the previous day. Specifically, the type of the area with many defects in the historical inspection data is set as the first type, and key inspection is performed; the type of other areas is set as the second type, and non-key inspection is performed, so as to balance the inspection efficiency and inspection accuracy.

[0097] The second situation: obtaining wafer product requirements; determining the area type of each area to be scanned on the wafer surface according to the wafer product requirements. Among them, the wafer product requirements refer to the design requirements, manufacturing process requirements or performance requirements of the wafer product. Specifically, the scanning level of each area to be scanned on the wafer surface is divided according to the wafer product requirements, so as to balance the detection efficiency and detection accuracy.

[0098] The third case: Obtain the historical wafer inspection data and wafer product requirements; determine the area type of each area to be scanned on the wafer surface based on the historical wafer inspection data and wafer product requirements. Compared with the above two methods, this method can more accurately determine the area type of each area to be scanned, which is conducive to reducing scanning errors and improving scanning accuracy.

[0099] In some optional embodiments of the present invention, the wafer supporting device includes a base, a stage and a driving mechanism, wherein the driving mechanism is mounted on the base and the stage is mounted on the driving mechanism.

[0100] Specifically, the driving mechanism may include a first linear driving mechanism, a second linear driving mechanism and a rotary driving mechanism. The first linear driving mechanism is installed above the stage, the second linear driving mechanism is installed above the first linear driving mechanism, the rotary driving mechanism is installed above the second linear driving mechanism, and the stage is installed above the rotary driving mechanism. The rotary driving mechanism can drive the stage to rotate around the Z axis, the second linear driving mechanism can drive the rotary driving mechanism and the stage to move along the Y axis, and the first linear driving mechanism can drive the second linear driving mechanism, the rotary driving mechanism and the stage to move along the X axis. During the scanning process, the wafer support device can drive the wafer to move along the X axis or the Y axis.

[0101] like Fig.10 As shown, in some optional embodiments of the present invention, the wafer electron beam scanning method may include the following steps:

[0102] S1, obtain the radius of the wafer and the scanning width of the electron beam;

[0103] S2, determining a set step length according to the radius of the wafer and the scanning width of the electron beam; the set step length is less than or equal to the scanning width;

[0104] S3, dividing the surface of the wafer into a plurality of annular areas to be scanned according to the set step length, wherein the width of the area to be scanned is equal to the set step length;

[0105] S4, obtaining wafer historical inspection data and wafer product requirements;

[0106] S5, determining the area type of each area to be scanned on the wafer according to the historical inspection data of the wafer and the wafer product requirements;

[0107] S6, obtaining an initial scanning position on the wafer surface;

[0108] S7, controlling the wafer support device to drive the wafer to move to a position where the scanning point of the scanning gun on the wafer coincides with the initial scanning position;

[0109] S8, turning on the electron beam scanning device to emit an electron beam;

[0110] S9, obtaining the area type of the area to be scanned on the surface of the wafer, adjusting the scanning parameters of the electron beam scanning device according to the area type, and adjusting the number of revolutions that the wafer support device drives the wafer to rotate around the center of the wafer; according to the adjusted scanning parameters and number of revolutions, controlling the wafer support device to drive the wafer to rotate around the center of the wafer, and controlling the electron beam scanning device to scan the area to be scanned;

[0111] S10, determining whether the entire scanning of the wafer surface is completed; if so, executing S12; if not, executing S11;

[0112] S11, controlling the wafer support device to drive the wafer to translate along the set direction of the wafer to set the step distance; after S11 is completed, continuing to execute S9 to complete the scanning of the next area to be scanned; wherein the setting method is to set the direction from the edge of the wafer to the center of the wafer;

[0113] S12, turn off the electron beam scanning device and end the scanning.

[0114] The scanning method of this embodiment has the advantages of fast scanning speed and high scanning accuracy. This embodiment can also realize differential scanning of different areas to meet the special scanning requirements of different areas.

[0115] The flow chart provided by the present embodiment is not intended to indicate that the operation of the method will be performed in any particular order, or that all operations of the method are included in all every case. In addition, the method may include additional operations. Within the scope of the technical thinking provided by the present embodiment method, additional changes may be made to the above method.

[0116] This embodiment also provides a computer program product 10 , a computer readable storage medium 20 , and a computer device 30 . Fig.11 is a schematic diagram of a computer program product 10 according to an embodiment of the present invention, Fig.12 is a schematic diagram of a computer-readable storage medium 20 according to an embodiment of the present invention, Fig.13 is a schematic diagram of a computer device 30 according to an embodiment of the present invention. The computer program product 10 includes a computer program 11, which implements the steps of any of the above-mentioned wafer electron beam scanning methods when executed by a processor 32. The computer readable storage medium 20 stores the above-mentioned computer program 11, which implements the steps of any of the above-mentioned wafer electron beam scanning methods when executed by the processor 32. The computer device 30 may include a memory 31, a processor 32, and the computer program 11 stored in the memory 31 and running on the processor 32.

[0117] The computer program 11 for performing the operation of the present invention may be an assembly instruction, an instruction set architecture (ISA) instruction, a machine instruction, a machine-related instruction, a microcode, a firmware instruction, a state setting data, a configuration data of an integrated circuit, or a source code or an object code written in any combination of one or more programming languages ​​and process programming languages. The computer program 11 may be executed entirely on the user's computer, partially on the user's computer, as an independent software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the latter case, the remote computer may be connected to the user's computer via any type of network (including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer. In some embodiments, in order to perform various aspects of the present invention, an electronic circuit including, for example, a programmable logic circuit, a field programmable gate array (FPGA) or a programmable logic array (PLA) may execute computer-readable program instructions by utilizing the state information of the computer-readable program instructions to personalize the electronic circuit.

[0118] In the description of this embodiment, the computer program product 10 is a related product including the computer program 11 .

[0119] For the purposes of the description of this embodiment, the computer-readable storage medium 20 is a tangible device capable of retaining and storing the computer program 11, which may be any device that can contain, store, communicate, propagate or transmit the program 11 for use with or in conjunction with an instruction execution system, device or apparatus. More specific examples (a non-exhaustive list) of the computer-readable storage medium 20 include the following: a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), a static random access memory (SRAM), a portable compact disk read-only memory (CD-ROM), a digital versatile disk (DVD), a memory stick, a floppy disk, a mechanical encoding device, and any suitable combination of the foregoing.

[0120] The computer device 30 may be, for example, a server, a desktop computer, a notebook computer, a tablet computer, or a smart phone. In some examples, the computer device 30 may be a cloud computing node. The computer device 30 may be described in the general context of computer system executable instructions (such as program modules) executed by a computer system. Typically, a program module may include routines, programs, target programs, components, logic, data structures, etc. that perform specific tasks or implement specific abstract data types. The computer device 30 may be implemented in a distributed cloud computing environment where remote processing devices linked via a communication network perform tasks. In a distributed cloud computing environment, program modules may be located on a local or remote computing system storage medium including a storage device.

[0121] The computer device 30 may include a processor 32 adapted to execute stored instructions, and a memory 31 providing temporary storage space for the operation of the instructions during operation. The processor 32 may be a single-core processor, a multi-core processor, a computing cluster, or any number of other configurations. The memory 31 may include a random access memory (RAM), a read-only memory, a flash memory, or any other suitable storage system.

[0122] The computer device 30 may also include a network adapter / interface and an input / output (I / O) interface. The I / O interface allows data to be input and output with external devices that may be connected to the computer device. The network adapter / interface may provide communication between the computer device and a network, which is typically shown as a communication network.

[0123] At this point, those skilled in the art should recognize that, although multiple exemplary embodiments of the present invention have been shown and described in detail herein, many other variations or modifications that conform to the principles of the present invention can still be directly determined or derived based on the content disclosed in the present invention without departing from the spirit and scope of the present invention. Therefore, the scope of the present invention should be understood and recognized as covering all these other variations or modifications.

Claims

1. A wafer electron beam scanning method, characterized in that: include: Controlling the wafer support device to drive the wafer to rotate around the center of the wafer, and controlling the electron beam scanning device to scan the surface of the wafer; After the wafer rotates at least one circle, the wafer support device is controlled to drive the wafer to translate along a set direction by a set step distance, and the set direction is the direction of a line connecting a scanning point of the scanning gun of the electron beam scanning device on the wafer and the center of the wafer.

2. The wafer electron beam scanning method according to claim 1, characterized in that: Before the step of controlling the wafer supporting device to drive the wafer to rotate around the center of the wafer and controlling the electron beam scanning device to scan the surface of the wafer, the method further includes: Acquire the area type of the area to be scanned on the surface of the wafer; wherein there are multiple area types, and the scanning levels of each area type are different; Adjusting scanning parameters of the electron beam scanning device according to the area type, and / or adjusting the number of revolutions that the wafer supporting device drives the wafer to rotate around the center of the wafer; Scanning is performed according to the adjusted scanning parameters and / or the number of turns.

3. The wafer electron beam scanning method according to claim 2, characterized in that: Before the step of obtaining the area type of the area to be scanned on the surface of the wafer, the method further includes: Dividing the surface of the wafer into a plurality of annular areas to be scanned according to the set step size; The area type of each of the areas to be scanned is determined.

4. The wafer electron beam scanning method according to claim 2, characterized in that: The scanning parameters include a scanning line speed, and the scanning line speed corresponding to the area type with a high scanning level is greater than the scanning line speed corresponding to the area type with a low scanning level; The number of circles corresponding to the area type with a high scanning level is greater than the number of circles corresponding to the area type with a low scanning level.

5. The wafer electron beam scanning method according to claim 3, characterized in that: The step of determining the area type of each area to be scanned comprises: Obtain wafer historical inspection data and / or wafer product requirements; The area type of each area to be scanned on the wafer is determined according to the historical inspection data of the wafer and / or the product requirements of the wafer.

6. The wafer electron beam scanning method according to claim 1, characterized in that: Before the step of controlling the wafer supporting device to drive the wafer to rotate around the center of the wafer and controlling the electron beam scanning device to scan the surface of the wafer, the method further includes: Obtain the radius of the wafer and the scanning width of the electron beam; The set step length is determined according to the radius and the scanning width; the set step length is less than or equal to the scanning width.

7. The wafer electron beam scanning method according to claim 1, characterized in that: Before the step of controlling the wafer support device to drive the wafer to rotate around the center of the wafer and controlling the electron beam scanning device to scan the surface of the wafer, the method further includes: Acquiring an initial scanning position on the surface of the wafer, wherein the initial scanning position is located at an edge or a center of the wafer; The wafer supporting device is controlled to drive the wafer to move to a position where a scanning point of the scanning gun on the wafer coincides with the initial scanning position.

8. The wafer electron beam scanning method according to claim 7, characterized in that: The step of controlling the wafer supporting device to drive the wafer to move to a position where the scanning point of the scanning gun on the wafer coincides with the initial scanning position comprises: Using a distance measuring device, measuring the distance from the projection point of the scanning gun on the plane where the wafer surface is located to the initial scanning position; According to the distance, the wafer supporting device is controlled to drive the wafer to move to a position where a scanning point of the scanning gun on the wafer coincides with the initial scanning position.

9. A computer-readable storage medium, characterized in that: A computer program is stored thereon, and when the computer program is executed by a processor, the steps of the wafer electron beam scanning method as claimed in any one of claims 1 to 8 are implemented.

10. A computer program product, comprising a computer program, characterized in that When the computer program is executed by a processor, the steps of the wafer electron beam scanning method according to any one of claims 1 to 8 are implemented.

11. A computer device, characterized in that: The method comprises a memory, a processor and a computer program stored in the memory, wherein the processor executes the computer program to implement the steps of the wafer electron beam scanning method according to any one of claims 1 to 8.

Images