Assembly and process for managing plasma processing by-product material

Abstract

Disclosed herein are assemblies and processes for managing non-volatile and / or low volatile by-product materials generated within a plasma processing region of a plasma processing chamber during various plasma-based processes performed on a substrate. These assemblies include a top window structure, a liner structure, an edge ring structure, a focus ring structure, a ground ring structure, a substrate access port shield, an insertion liner for a port opening in a chamber wall, and a discharge baffle assembly for positioning within a discharge channel connected to the chamber. One or more exposed treated surfaces of the various components are subjected to a surface roughening / texturing treatment to impart a surface roughness and / or engineered topography to the exposed treated surfaces for promoting adhesion and retention of plasma treatment byproduct materials. Various components having roughened / textured surfaces exposed to treatment are configured for lead zirconate titanate (PZT) film etch and / or platinum (Pt) film etch treatments.

Description

This application is a divisional application of the application with application number 201980007726.9, application date January 7, 2019, and invention name “Components and processes for managing plasma processing by-product materials”. Technical Field

[0001] The present invention relates to the manufacture of semiconductor devices. Background Art

[0002] In various semiconductor manufacturing processes, a treatment gas is converted into a plasma in a processing chamber in which a substrate is placed. The substrate is exposed to the plasma to produce a desired effect on the substrate, such as etching / removing material from the substrate, and / or depositing material on the substrate, and / or changing the properties of the material on the substrate. In some semiconductor manufacturing processes, non-volatile and / or low-volatile plasma processing byproduct materials can be produced in the processing chamber. As these byproduct materials are deposited and accumulated on various components in the processing chamber, various problems may occur. For example, byproduct materials may peel off and / or peel off from components and fall on surfaces that should be kept free of contamination in the processing chamber, such as substrate support structures and the substrate itself. In addition, byproduct materials can diffuse into small openings and mechanically active structures in the processing chamber, thereby causing operational problems and / or increasing the time and cost required to clean the processing chamber. Moreover, the accumulation and removal of byproduct materials in the processing chamber increases the frequency at which the processing chamber must be stopped for cleaning, which adversely affects the substrate manufacturing output of the processing chamber. Against this background, the present invention is produced. Summary of the invention

[0003] In an exemplary embodiment, a surface textured plasma processing chamber component is disclosed as a ceramic component configured to be placed in a plasma processing chamber, wherein the ceramic component includes at least one rough surface, the at least one rough surface being positioned to be exposed to plasma processing byproduct materials when the ceramic component is placed in the plasma processing chamber during operation in the plasma processing chamber. The at least one rough surface is configured to promote adhesion of the plasma processing byproduct materials and the ceramic component.

[0004] In an exemplary embodiment, a plasma processing chamber is disclosed. The plasma processing chamber includes: a substrate support structure configured to keep a substrate exposed to plasma during operation of the plasma processing chamber. The plasma processing chamber also includes: a top window structure located above the substrate support structure to establish a plasma processing region between the substrate support structure and the top window structure. The top window structure is formed of a ceramic material. The top window structure has a bottom surface facing the plasma processing region. The bottom surface has a surface roughness that promotes adhesion of plasma processing byproduct materials to the bottom surface.

[0005] In an exemplary embodiment, a method for plasma treatment of a substrate is disclosed. The method includes: providing a plasma treatment chamber, the plasma treatment chamber including a substrate support structure and a top window structure. The substrate support structure is configured to keep the substrate exposed to plasma. The top window structure is located above the substrate support structure to establish a plasma treatment region between the substrate support structure and the top window structure. The top window structure is formed of a ceramic material. The top window structure has a bottom surface facing the plasma treatment region. The bottom surface has a surface roughness that promotes adhesion of plasma treatment byproduct materials to the bottom surface. The method also includes generating plasma in the plasma treatment region. Components of the plasma interact with materials on the substrate to generate plasma treatment byproduct materials, wherein some of the plasma treatment byproduct materials adhere to the bottom surface of the top window structure.

[0006] In an exemplary embodiment, a method for manufacturing a component for use in a plasma processing chamber is disclosed. The method includes: forming a ceramic component for installation in a plasma processing chamber. The ceramic component has at least one surface exposed to processing. The method also includes roughening the at least one surface exposed to processing to have a surface roughness average value in a range extending from about 150 micro-inches to about 500 micro-inches.

[0007] In an exemplary embodiment, a method for converting a coated component for use in a plasma processing chamber to a surface roughened component for use in the plasma processing chamber is disclosed. The method includes: stripping a coating from a ceramic component to a bare ceramic material forming the ceramic component. The ceramic component is configured to be installed in a plasma processing chamber. The ceramic component has at least one surface exposed to processing. The method also includes roughening the at least one surface exposed to processing to have a surface roughness average value in a range extending from about 150 micro-inches to about 500 micro-inches.

[0008] In an exemplary embodiment, a focus ring for a plasma processing chamber is disclosed. The focus ring includes: a ring structure formed of a ceramic material. The ring structure is configured to circumscribe a substrate support structure within a plasma processing chamber. The ring structure has an inner surface oriented to be exposed to plasma processing byproduct materials when the ring structure is placed within the plasma processing chamber during operation of the plasma processing chamber. The inner surface is formed to have a controlled surface topography variation that promotes adhesion of plasma processing byproduct materials to the inner surface.

[0009] In an exemplary embodiment, a plasma processing chamber is disclosed. The plasma processing chamber includes: a substrate support structure configured to maintain a substrate exposed to plasma during operation of the plasma processing chamber. The plasma processing chamber includes: a focusing ring, which includes a ring structure formed of a ceramic material. The ring structure is configured to circumscribe the substrate support structure within the plasma processing chamber. The ring structure has an inner surface that is oriented to be exposed to plasma processing byproduct materials during operation of the plasma processing chamber. The inner surface is formed to have a controlled surface topography change that promotes adhesion of plasma processing byproduct materials to the inner surface.

[0010] In an exemplary embodiment, a method for plasma processing of a substrate is disclosed. The method includes: providing a plasma processing chamber including a substrate support structure and a focus ring, the focus ring including a ring structure formed of a ceramic material. The ring structure is configured to circumscribe the substrate support structure within the plasma processing chamber. The ring structure has an inner surface positioned to be exposed to plasma processing byproduct materials during operation of the plasma processing chamber. The inner surface is formed to have a controlled surface morphology change to promote adhesion of the plasma processing byproduct materials to the inner surface. The method also includes: generating a plasma in a plasma processing region above the substrate support structure. Components of the plasma interact with materials on the substrate to generate plasma processing byproduct materials, wherein some of the plasma processing byproduct materials adhere to the inner surface of the ring structure.

[0011] In an exemplary embodiment, a method of manufacturing a focusing ring for a plasma processing chamber is disclosed. The method includes: forming a ring structure from a ceramic material. The ring structure is configured to circumscribe a substrate support structure within a plasma processing chamber. The ring structure has an inner surface, and the inner surface is positioned to be exposed to the plasma processing byproduct material when the ring structure is placed within the plasma processing chamber during operation of the plasma processing chamber. The method also includes: forming a controlled surface topography change on the inner surface of the ring structure. The controlled surface topography change promotes adhesion of the plasma processing byproduct material to the inner surface.

[0012] In an exemplary embodiment, a substrate access port shield for a plasma processing chamber is disclosed. The substrate access port shield includes a shield segment, a first support segment, and a second support segment. The first support segment extends from a first end of the shield segment. The first support segment is configured to engage with a vertically movable component in a plasma processing chamber. The second support segment extends from a second end of the shield segment. The second support segment is configured to engage with the vertically movable component in the plasma processing chamber. The shield segment and the first and second support segments form an integral shield structure extending along an arc. Vertical movement of the vertically movable component causes corresponding vertical movement of the integral shield structure. The shield segment is configured to at least partially cover the substrate access port opening of the plasma processing chamber when the first support segment and the second support segment engage the vertically movable component and the vertically movable component is in a lowered vertical position. The shield segment is configured to expose the substrate access port opening of the plasma processing chamber when the first support segment and the second support segment engage the vertically movable component and the vertically movable component is in an elevated vertical position.

[0013] In an exemplary embodiment, a plasma processing chamber is disclosed. The plasma processing chamber includes: a substrate support structure configured to keep a substrate exposed to plasma during operation of the plasma processing chamber. The plasma processing chamber includes: a focusing ring structure configured to circumscribe the substrate support structure within the plasma processing chamber. The focusing ring structure includes a ring portion formed as a perfect circular hollow cylinder and three radially extending structures configured to extend radially outward from the outer surface of the ring portion. The three radially extending structures are spaced apart along the outer circumference of the ring portion. The plasma processing chamber also includes: an integrated shield structure, which includes a shield segment, a first support segment, and a second support segment. The first support segment extends from a first end of the shield segment. The first support segment is configured to engage with a first of the three radially extending structures of the focusing ring structure. The second support segment extends from a second end of the shield segment. The second support segment is configured to engage with a second of the three radially extending structures of the focusing ring structure. The integrated shield structure is formed to extend along an arc. The shield segment is configured to at least partially cover the substrate access port opening of the plasma processing chamber when the focus ring structure is in a lowered vertical position. The shield segment is configured to uncover the substrate access port opening of the plasma processing chamber when the focus ring structure is in a raised vertical position.

[0014] In an exemplary embodiment, a method for plasma processing a substrate is disclosed. The method includes: providing a plasma processing chamber, the plasma processing chamber including a substrate support structure, a focus ring structure and an integrated shield structure. The focus ring structure is configured to circumscribe the substrate support structure. The focus ring structure includes a ring portion formed as a perfect circular hollow cylinder and three radially extending structures configured to extend radially outward from the outer surface of the ring portion. The three radially extending structures are spaced apart along the outer circumference of the ring portion. The integrated shield structure includes a shield segment, a first support segment and a second support segment. The first support segment extends from a first end of the shield segment. The first support segment is configured to engage with a first of the three radially extending structures of the focus ring structure. The second support segment extends from a second end of the shield segment. The second support segment is configured to engage with a second of the three radially extending structures of the focus ring structure. The integrated shield structure is formed to extend along an arc. The shield segment is configured to at least partially cover the substrate inlet and outlet port opening of the plasma processing chamber when the focus ring structure is in a lowered vertical position. The shield segment is configured to expose the substrate access port opening of the plasma processing chamber when the focus ring structure is in a raised vertical position. The method also includes: positioning the focus ring structure in the lowered vertical position. The method also includes: generating plasma in a plasma processing region above the substrate support structure.

[0015] In an exemplary embodiment, a method for manufacturing a substrate access port shield for a plasma processing chamber is disclosed. The method includes: forming an integral shield structure to include a shield segment, a first support segment extending from a first end of the shield segment, and a second support segment extending from a second end of the shield segment. The first support segment is configured to engage with a vertical movable component within a plasma processing chamber. The second support segment is configured to engage with the vertical movable component within the plasma processing chamber. The integral shield structure is formed to extend along an arc, and the shield segment is configured to at least partially cover the substrate access port opening of the plasma processing chamber when the first support segment and the second support segment engage the vertical movable component and the vertical movable component is in a lowered vertical position. The shield segment is configured to expose the substrate access port opening of the plasma processing chamber when the first support segment and the second support segment engage the vertical movable component and the vertical movable component is in an elevated vertical position.

[0016] In an exemplary embodiment, an insert bushing for a port of a plasma processing chamber is disclosed. The insert bushing is configured to cover an inner surface of a port formed through a wall of a plasma processing chamber. The insert bushing is configured to have a mechanical flexibility sufficient to compress an outer surface profile of the insert bushing so that the insert bushing can be inserted into the port. The insert bushing is configured to apply a spring force to the inner surface of the port when the compressive force of the outer surface profile of the insert bushing is released.

[0017] In an exemplary embodiment, a plasma processing system is disclosed. The plasma processing system includes: a plasma processing chamber, which includes a plasma processing region, and plasma is generated in the plasma processing region during operation of the plasma processing chamber. The plasma processing chamber includes a wall forming a portion of an enclosure surrounding the plasma processing region. The wall includes a port formed through the wall. The plasma processing chamber includes: an insert bushing positioned in the port. The insert bushing is configured to cover an inner surface of the port. The insert bushing is configured to apply a spring force to the inner surface of the port to maintain the insert bushing in a proper position in the port.

[0018] In an exemplary embodiment, a method for plasma processing a substrate is disclosed. The method includes: providing a plasma processing chamber, which includes a plasma processing region, and generating plasma in the plasma processing region during operation of the plasma processing chamber. The plasma processing chamber includes a wall forming a portion of an enclosure surrounding the plasma processing region. The wall includes a port formed through the wall. The method also includes: positioning an insert bushing in the port. The insert bushing is configured to cover an inner surface of the port. The insert bushing is configured to apply a spring force to the inner surface of the port to maintain the insert bushing in an appropriate position in the port. The method also includes: generating a plasma exposed to a substrate in the plasma processing region. Components of the plasma interact with materials on the substrate to generate plasma processing byproduct materials. The insert bushing prevents the plasma processing byproduct materials from contacting the inner surface of the port.

[0019] In an exemplary embodiment, a method of manufacturing an insert bushing for a port of a plasma processing chamber is disclosed. The method includes: forming an insert bushing for covering an inner surface of a port formed through a wall of a plasma processing chamber. The insert bushing is configured to have a mechanical flexibility sufficient to compress an outer surface profile of the insert bushing so that the insert bushing can be inserted into the port. The insert bushing is configured to apply a spring force to the inner surface of the port when the compressive force of the outer surface profile of the insert bushing is released.

[0020] In an exemplary embodiment, an exhaust baffle assembly for a plasma processing chamber is disclosed. The exhaust baffle assembly includes: at least one baffle member configured to fit within an exhaust passage of the plasma processing chamber. The at least one baffle member is shaped to deflect a process exhaust gas flow when positioned within the exhaust passage. An outer surface of the at least one baffle member is adjusted to promote adhesion of plasma processing byproduct materials present in the process exhaust gas flow to the at least one baffle member.

[0021] In an exemplary embodiment, a plasma processing system is disclosed. It includes: a plasma processing chamber. The plasma processing system includes a plasma processing region, in which plasma is generated during operation of the plasma processing chamber. The plasma processing system also includes: an exhaust channel for the plasma processing chamber. The exhaust channel is fluidly connected to the plasma processing region. The exhaust channel is configured to guide a flow of treated exhaust gas from the plasma processing region. The plasma processing system also includes: a pump connected to the exhaust channel. The pump is configured to apply a negative pressure to the interior of the exhaust channel. The plasma processing system also includes: an exhaust baffle assembly, which is positioned within the exhaust channel. The exhaust baffle assembly includes at least one baffle member, and the at least one baffle member is formed to deflect the flow of treated exhaust gas within the exhaust channel. The outer surface of the at least one baffle member is adjusted to promote adhesion of plasma processing byproduct materials present in the treated exhaust gas flow to the at least one baffle member.

[0022] In an exemplary embodiment, a method for plasma treatment of a substrate is disclosed. The method includes: providing a plasma treatment system, the plasma treatment system including a plasma treatment chamber and an exhaust passage for the plasma treatment chamber. The plasma treatment chamber includes a plasma treatment region, and plasma is generated in the plasma treatment region during operation of the plasma treatment chamber. The exhaust passage is fluidly connected to the plasma treatment region. The exhaust passage is configured to guide a process exhaust gas flow from the plasma treatment region. The plasma treatment system also includes a pump connected to the exhaust passage. The pump is configured to apply a negative pressure to the interior of the exhaust passage. The plasma treatment system includes an exhaust baffle assembly, which is positioned within the exhaust passage. The exhaust baffle assembly includes at least one baffle member, the at least one baffle member being shaped to deflect the process exhaust gas flow within the exhaust passage. Adjusting the outer surface of the at least one baffle member to promote adhesion of plasma treatment byproduct materials present in the process exhaust gas flow to the at least one baffle member. The method also includes: generating a plasma exposed to the substrate in the plasma treatment region. The method further includes operating the pump to apply the negative pressure to the interior of the exhaust passage to draw the process exhaust gas flow from the plasma processing region into the exhaust passage and through the exhaust baffle assembly within the exhaust passage.

[0023] In an exemplary embodiment, a method of manufacturing an exhaust baffle assembly for a plasma processing system is disclosed. The method also includes: forming at least one baffle member for fitting within an exhaust passage of a plasma processing chamber. The at least one baffle member is shaped to deflect a process exhaust gas flow when positioned within the exhaust passage. The method also includes: adjusting an outer surface of the at least one baffle member to promote adhesion of plasma processing byproduct materials present in the process exhaust gas flow to the at least one baffle member.

[0024] Other aspects and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, which illustrate the invention by way of example. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1A An exemplary system for performing plasma processing on a substrate is shown in accordance with some embodiments.

[0026] Figure 1B According to some embodiments, Figure 1A A vertical cross-sectional view of a portion of a system.

[0027] Figure 1CAn isometric view of a substrate support structure having an edge ring structure and a ground ring structure positioned around the substrate support structure is shown in accordance with some exemplary embodiments.

[0028] Figure 1D An isometric view of a substrate support structure is shown, wherein an edge ring structure and a ground ring structure are positioned around the substrate support structure, and a focus ring structure is located above and around an upper surface of the substrate support structure, according to some exemplary embodiments.

[0029] Figure 1E According to some exemplary embodiments, Figure 1D A configuration in which the focus ring structure is in an elevated position relative to the substrate support structure.

[0030] Figure 1F An isometric view of an example of a bushing structure on a grounding ring structure is shown, according to some exemplary embodiments.

[0031] Figure 2 An isometric view of the bottom surface of a top window structure according to some embodiments is shown.

[0032] Figure 3 An isometric view of a bushing structure according to some embodiments is shown.

[0033] Figure 4 An isometric view of an edge ring structure is shown in accordance with some embodiments.

[0034] Figure 5 An isometric view of a focus ring structure is shown according to some embodiments.

[0035] Figure 6 An isometric view of a ground ring structure is shown in accordance with some embodiments.

[0036] Figure 7 A flow chart of a method for plasma processing of a substrate is shown according to some embodiments.

[0037] Figure 8 A flow chart of a method for making a surface textured plasma processing chamber component is shown, according to some embodiments.

[0038] Fig. 9 A flow chart of a method for converting a coated plasma processing chamber component into a surface textured plasma processing chamber component is shown, according to some embodiments.

[0039] Fig. 10A An isometric view of a focus ring structure having controlled surface topography variations on the inner surface of its ring portion is shown according to some embodiments.

[0040] Fig. 10B According to some embodiments, Fig. 10A A perspective view of the focusing ring structure.

[0041] Fig. 10C According to some embodiments, Fig. 10A A top view of the focusing ring structure.

[0042] Fig. 10D According to some embodiments, Fig. 10C The detailed view referenced in .

[0043] Fig.10E A cross-sectional view through two adjacent protrusion structures is shown according to some embodiments.

[0044] Fig.10F A vertical cross section through the center of a focus ring structure is shown, according to some embodiments.

[0045] Figure 10G A diagram is shown for forming raised structures in a rectangular array on the inner surface of a ring portion of a focusing ring structure according to some embodiments.

[0046] Fig. 10H A diagram is shown for forming raised structures in a square array on the inner surface of a ring portion of a focusing ring structure according to some embodiments.

[0047] Fig.10I A diagram is shown for forming raised structures in a hexagonal lattice on the inner surface of the ring portion of a focusing ring structure according to some embodiments.

[0048] Fig.10J A diagram is shown for forming raised structures in a parallelogram lattice on the inner surface of a ring portion of a focusing ring structure according to some embodiments.

[0049] Figure 10K A diagram is shown for forming raised structures in a diamond lattice on the inner surface of a ring portion of a focusing ring structure according to some embodiments.

[0050] Fig.11 A flow chart of a method for plasma processing of a substrate is shown according to some embodiments.

[0051] Fig.12 A flow chart is shown of a method for fabricating a focus ring structure for use in a plasma processing chamber, according to some embodiments.

[0052] Fig.13A According to some embodiments, Figure 1AA system having an access control device positioned to cover an opening.

[0053] Fig. 13B A schematic diagram of a chamber interfaced with a substrate handling module via an access control device is shown according to some embodiments.

[0054] Fig.14 A substrate access port shield for use in a chamber is shown according to some embodiments.

[0055] Fig.15 An isometric view of a substrate access port shield showing a cutout area is shown according to some embodiments.

[0056] Fig.16 A variation of a substrate access port shield according to some embodiments of the present invention is shown in which the vertical distance of the shield segments is reduced so that the chamber opening is fully exposed when the focus ring structure is in its fully raised vertical position.

[0057] Fig.17A A side view of an exemplary substrate access port shield positioned on a focus ring structure is shown, wherein the focus ring structure is in a fully lowered position, according to some embodiments.

[0058] Fig. 17B A side view of an exemplary substrate access port shield positioned on a focus ring structure in a fully raised position is shown in accordance with some embodiments.

[0059] Fig.18 A flow chart of a method for plasma processing of a substrate is shown according to some embodiments.

[0060] Fig.19 A flow chart of a method for manufacturing a substrate access port shield for use in a plasma processing chamber is shown, according to some embodiments.

[0061] Fig. 20 A chamber with an opening for transferring a substrate into and out of the chamber is shown according to some embodiments.

[0062] Fig.21 An insertion bushing configured for insertion into an opening for transferring substrates into and out of a chamber and an insertion bushing configured for insertion into an opening of a viewport are shown in accordance with some embodiments.

[0063] Fig. 22 An isometric view of an insert sleeve configured to be inserted into an opening for transferring a substrate into and out of a chamber is shown according to some embodiments.

[0064] Fig.23An isometric view of an insertion bushing configured to be inserted into an opening of a viewport is shown according to some embodiments.

[0065] Fig.24 According to some embodiments, Fig. 22 A variation of the insert bushing in which the bushing is cut through on a vertical side of the bushing to form a gap.

[0066] Fig.25 According to some embodiments, Fig. 22 A front view of a variation of an insert bushing including a convex region formed above an upper surface of the insert bushing.

[0067] Fig.26 An insertion sleeve configured to be inserted into an opening for a viewport and comprising a vertical surface blocking the opening at an inner surface of a chamber wall is shown according to some embodiments.

[0068] Fig. 27 An insert bushing configured to be inserted into an opening for a viewport and including a vertical surface that substantially covers a surface of a window exposed through the opening is shown according to some embodiments.

[0069] Fig.28 An insert sleeve according to some embodiments is shown, which is configured to be inserted into an opening for a viewport and includes a first vertical surface that substantially covers a surface of a window exposed through the opening and includes a second vertical surface that blocks the opening at an inner surface of a chamber wall.

[0070] Fig.29 An insertion plug configured to fit snugly within an opening for a viewport and provide a continuation of the contour of the interior surface of the chamber wall is shown according to some embodiments.

[0071] Fig.30 A flow chart of a method for plasma processing of a substrate is shown according to some embodiments.

[0072] Fig.31 A flow chart of a method for manufacturing an insert liner for a plasma processing chamber is shown, according to some embodiments.

[0073] Fig.32 An example drain baffle assembly is shown positioned within a drain passage of a drain assembly according to some exemplary embodiments.

[0074] Fig.33 An exhaust baffle assembly is shown positioned within an exhaust passage proximate to a chamber, according to some embodiments.

[0075] Fig.34A vertical cross-sectional view through a chamber, a drain assembly, and a drain baffle assembly is shown, wherein the drain baffle assembly is positioned at the drain outlet of the chamber, according to some embodiments.

[0076] Fig.35 An isometric view of an exemplary exhaust baffle assembly is shown, according to some embodiments.

[0077] Fig.36 A front view of a discharge baffle assembly is shown according to some embodiments.

[0078] Fig.37 A side view of a discharge baffle assembly is shown according to some embodiments.

[0079] Fig.38 A flow chart of a method for plasma processing of a substrate is shown according to some embodiments.

[0080] Fig.39 A flow chart of a method for manufacturing an exhaust baffle assembly for use in a plasma processing system is shown, according to some embodiments. DETAILED DESCRIPTION

[0081] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it is apparent to those skilled in the art that the present invention may be practiced without some or all of these specific details. In other cases, well-known processing operations are not described in detail to avoid unnecessarily obscuring the present invention.

[0082] Figure 1A An exemplary system 100 for performing plasma processing on a substrate 101 is shown in accordance with some embodiments. Figure 1B A vertical cross-sectional view of a portion of a system 100 according to some embodiments is shown. In some exemplary embodiments, the substrate 101 referred to herein is a semiconductor wafer. However, it should be understood that in other embodiments, the substrate 101 referred to herein may be a substrate formed of sapphire, GaN, GaAs or SiC or other substrate materials, and may include a glass panel / substrate, a metal foil, a metal sheet, a polymer material, etc. Moreover, in various embodiments, the substrate 101 referred to herein may vary in form, shape and / or size. For example, in some embodiments, the substrate 101 may correspond to a 200 mm (millimeter) semiconductor wafer, a 300 mm semiconductor wafer, or a 450 mm semiconductor wafer. In addition, in some embodiments, the substrate 101 may correspond to a non-circular substrate, particularly a rectangular substrate such as for a flat panel display.

[0083] The system 100 includes a plasma processing chamber 102 for performing a plasma-based process on a substrate 101. A plasma-based process can be essentially any process in which a component of a plasma is used to modify a property of the substrate 101 in a prescribed and controlled manner. In various embodiments, the plasma-based process is an etching process that removes material from the substrate 101, or a deposition process that adds material to the substrate 101, or a combination of an etching process and a deposition process.

[0084] The chamber 102 includes a wall 105 surrounding the interior of the chamber 102. In some embodiments, the wall 105 is formed of a conductive material and has an electrical connection to a reference ground potential. The wall 105 may include a plurality of openings / ports configured for various purposes. For example, the wall 105 of the exemplary chamber 102 includes an opening 106A for transferring the substrate 101 into and out of the chamber 102. In some embodiments, the opening 106A is docked with a slit valve, which provides a passage for a robot substrate handling device to enter the chamber 102 through the opening 106A, and seals the opening 106A when the chamber 102 is running. In addition, the wall 105 of the exemplary chamber 102 includes an opening 106B, which provides a viewport for observing the plasma processing region 109 in the chamber 102 manually or through various devices such as optical monitoring devices or optical endpoint detection devices. The opening 106B can be covered in a sealed manner by a window 108, which is formed of an optically transparent material such as glass or plastic or other similar materials.

[0085] The substrate support structure 103 is present inside the chamber 102 and is configured to hold the substrate 101 during plasma processing in the chamber 102. In some embodiments, the substrate support structure 103 is an electrostatic chuck configured to generate an electrostatic field to hold the substrate 101. In various embodiments, the substrate support structure 103 can include various components and systems. For example, the substrate support structure 103 can be configured to include one or more electrodes for transmitting radio frequency power and / or for generating a bias voltage. Moreover, the substrate support structure 103 can include one or more temperature control devices, such as heaters and / or cooling channels. Moreover, the substrate support structure 103 can include a plurality of lift pins and associated mechanical devices to facilitate the movement of the substrate 101 between the robot handling device and the substrate support structure 103. In addition, the substrate support structure 103 can include a plurality of sensors and / or probes for measuring temperature and for measuring electrical parameters, such as voltage and / or current.

[0086] The top window structure 107 is located above the substrate support structure 103 and separated from the substrate support structure 103, so that there is a plasma processing region 109 between the substrate support structure 103 and the top window structure 107. In some embodiments, the wall 105 includes an upper flange structure 111, which is configured to receive and support the top window structure 107. The top window structure 107 is formed by a material (especially, for example, quartz or ceramic) that can transmit radio frequency (RF) signals. In addition, in some embodiments, the top window structure 107 is configured to be used as a gas distribution plate. For example, the top window structure 107 may include a plurality of gas input ports, an arrangement of internal fluid channels fluidly connected to the gas input ports, and a plurality of gas output ports fluidly connected to the internal fluid channels. The processing gas supplied to the gas input port of the top window structure 107 flows through the internal fluid channel to the gas output port of the top window structure 107, where the processing gas is distributed into the plasma processing region 109. The gas output ports and internal fluid channels of the top window structure 107 may be configured to distribute the process gas into the plasma processing region 109 in a spatially controlled manner.

[0087] The coil assembly 113 is located above the top window structure 107. The coil assembly 113 is connected to a radio frequency (RF) generator 115 through an impedance matching circuit 117. The coil assembly 113 is configured to transmit RF power through the top window structure 107 to the plasma processing region 109 when the RF power is transmitted from the RF generator 115 to the coil assembly 113 through the impedance matching circuit 117. The impedance matching circuit 117 includes an arrangement of capacitors and inductors that are configured to ensure that the impedance encountered by the RF generator 115 at the input of the impedance matching circuit 117 is sufficiently close to the output impedance (typically 50 ohms) for which the RF generator 115 is designed to operate, so that the RF power generated and transmitted by the RF generator 115 will be transmitted into the plasma processing region 109 in an efficient manner (e.g., without unacceptable or undesirable reflections).

[0088] In various embodiments, the RF generator 115 may include one or more RF signal generators operating at one or more frequencies. Multiple RF signal frequencies may be provided to the coil assembly 113 simultaneously. In some embodiments, the signal frequency output by the RF generator 115 is set within a range from 1kHz (kilohertz) to 100MHz (megahertz). In some embodiments, the signal frequency output by the RF generator 115 is set within a range extending from 400kHz to 60MHz. In some embodiments, the RF generator 115 is configured to generate RF signals with frequencies of 2MHz, 27MHz, 13.56MHz and 60MHz. In some embodiments, the RF generator 115 is configured to generate one or more high-frequency RF signals within a frequency range from about 2MHz to about 60MHz, and to generate one or more low-frequency RF signals within a frequency range from about 100kHz to about 2MHz. It should be understood that the above-mentioned RF signal frequency range is provided as an example. In practice, the RF generator 115 can be configured to generate substantially any RF signal having substantially any frequency required to generate plasma in the plasma processing region 109. Additionally, the RF generator 115 may include frequency-based filtering, ie, high pass filtering and / or low pass filtering, to ensure that a designated RF signal frequency is transmitted to the coil assembly 113 .

[0089] The chamber 102 is connected to a process gas supply system 120 so that one or more process gases can be supplied to the plasma processing region 109 in a controlled manner. It should be understood that the process gas supply system 120 includes one or more process gas sources and an arrangement of valves and mass flow controllers to enable one or more process gases to be provided to the plasma processing region 109 at a controlled flow rate and a controlled flow time. During operation, the process gas supply system 120 operates to deliver one or more process gases to the plasma processing region 109, and RF power is delivered from the RF generator 115 to the coil assembly 113 so that the RF power generates an electromagnetic field within the plasma processing region 109 to convert the one or more process gases within the plasma processing region 109 into a plasma. The reactive components of the plasma (e.g., ions and / or radicals) can then interact with portions of the substrate 101.

[0090] The exhaust assembly 119 is connected to the plasma processing chamber 102. The exhaust assembly 119 includes an exhaust passage 121 having an internal flow region that is fluidly connected to the plasma processing region 109. The exhaust assembly 119 also includes a pump 123 fluidly connected to the internal flow region of the exhaust passage 121. In some embodiments, the exhaust assembly 119 includes a conduit / tube 122 to fluidly connect the exhaust passage 121 to the pump 123. During operation, the pump 123 operates to draw exhaust gases and process byproduct materials from the plasma processing region 109, through the internal flow region of the exhaust passage 121, through the conduit / tube 122, to the pump 123.

[0091] In some embodiments, the substrate support structure 103 is configured to receive bias RF power from a bias RF generator 125 through an impedance matching circuit 127 to provide a bias voltage for generation on the substrate support structure 103 (and on the substrate 101 itself) so as to attract ions from the plasma in the plasma processing region 109 toward the substrate 101 held on the substrate support structure 103. The impedance matching circuit 127 includes an arrangement of capacitors and inductors configured to ensure that the impedance encountered by the RF generator 125 at the input of the impedance matching circuit 127 is sufficiently close to the output impedance (typically 50 ohms) for which the RF generator 125 is designed to operate, so that the RF power generated and transmitted by the RF generator 125 will be transmitted to the substrate support structure 103 in an efficient manner (e.g., without unacceptable or undesirable reflections).

[0092] In various embodiments, the bias RF generator 125 may include one or more RF signal generators operating at one or more frequencies. Multiple RF signal frequencies may be provided to the substrate support structure 103 simultaneously. In some embodiments, the signal frequency output by the bias RF generator 125 is set within a range from 1kHz to 100MHz. In some embodiments, the signal frequency output by the bias RF generator 125 is set within a range extending from 400kHz to 60MHz. In some embodiments, the bias RF generator 125 is configured to generate RF signals with frequencies of 2MHz, 27MHz, 13.56MHz and 60MHz. In some embodiments, the bias RF generator 125 is configured to generate one or more high-frequency RF signals within a frequency range from about 2MHz to about 60MHz, and one or more low-frequency RF signals within a frequency range from about 100kHz to about 2MHz. It should be understood that the above-mentioned RF signal frequency range is provided as an example. In practice, the bias RF generator 125 can be configured to generate substantially any RF signal having substantially any frequency required to generate a prescribed bias voltage at the substrate 101. Additionally, the bias RF generator 125 may include frequency-based filtering, ie, high pass filtering and / or low pass filtering, to ensure that a designated RF signal frequency is transmitted to the substrate support structure 103 .

[0093] The system 100 may also include a control module 129. In some embodiments, the control module 129 is implemented as a combination of computer hardware and software. The control module 129 may be connected to and configured to control: the process gas supply system 120, the RF generator 115 and the associated impedance matching circuit 117, the RF generator 125 and the associated impedance matching circuit 127, the pump 123, and substantially any other controllable components of the system 100 (e.g., the temperature control device and substrate lifting pins and other components within the substrate support structure 103). In addition, the control module 129 may be connected to and configured to receive signals from various components, sensors, and monitoring devices within the system 100. For example, the control module 129 may be connected to the substrate support structure 103 and configured to receive voltage and / or current measurement signals from the substrate support structure 103. Also, the control module 129 may be connected to the plasma processing region 109 and configured to receive temperature and pressure measurement signals from within the plasma processing region 109. It should be understood that the control module 129 can be connected to and configured to control substantially any active device, i.e., controllable device, within the system 100. Also, it should be understood that the control module 129 can be connected to substantially any location within the system 100 and configured to monitor substantially any physical and / or electrical state, condition, and / or parameter at such location. The control module 129 can also be configured to direct the operation of various components within the system 100 in a synchronized manner to perform prescribed plasma processing operations on the substrate 101. For example, the control module 129 can be configured to control the system 100 by executing process inputs and control instructions / programs. The process inputs and control instructions / programs can include a process recipe required to obtain a desired process result on the substrate 101, the process recipe having time-dependent directions for parameters such as power levels, timing parameters, process gases, mechanical movement of the substrate 101, and the like.

[0094] Figure 1C An isometric view of a substrate support structure 103 having an edge ring structure 131 and a grounding ring structure 133 positioned around the substrate support structure 103 is shown according to some exemplary embodiments. Figure 1B1 and 13. A vertical cross-sectional view of the edge ring structure 131 and the grounding ring structure 133 is also shown in FIG. In some embodiments, the edge ring structure 131 is configured to surround the substrate support structure 103 at a position proximate to the substrate support structure 103. The edge ring structure 131 provides a uniform RF field to support uniformity of plasma generation within the plasma processing region 109. In some embodiments, the edge ring structure 131 is formed of a ceramic material. In some embodiments, the edge ring structure 131 is formed of aluminum oxide. In some embodiments, the edge ring structure 131 is formed of silicon carbide. It should be understood that in various embodiments, the edge ring structure 131 can be formed of substantially any material having a sufficiently high electrical resistance to maintain electrical separation between the substrate support structure 103 and the grounding ring structure 133, and being chemically compatible with materials that will be present in the plasma processing region 109 during operation of the chamber 102, and being mechanically and thermally stable in the presence of the temperatures and pressures that will be present in the plasma processing region 109 during operation of the chamber 102.

[0095] The ground ring structure 133 is formed of a conductive material and is electrically connected to the chamber wall 105 and, thus, to a reference ground potential. In some embodiments, the ground ring structure 133 is formed of a metallic material, such as aluminum or stainless steel, or alloys thereof. It should be understood that in various embodiments, the ground ring structure 133 can be formed of substantially any material having a sufficiently high electrical conductivity to provide a surface at a reference ground potential around the substrate support structure 103, and being chemically compatible with the materials that will be present in the plasma processing region 109 during operation of the chamber 102, and being mechanically and thermally stable in the presence of the temperatures and pressures that will be present in the plasma processing region 109 during operation of the chamber 102.

[0096] Figure 1D An isometric view of a substrate support structure 103 is shown, wherein an edge ring structure 131 and a ground ring structure 133 are positioned around the substrate support structure 103, and a focus ring structure 135 is positioned above and around an upper surface of the substrate support structure 103, according to some exemplary embodiments. Figure 1B, a vertical cross-sectional view of a focus ring structure 135 according to some exemplary embodiments is shown. In some embodiments, the focus ring structure 135 is positioned within the plasma processing chamber 102 to surround the plasma processing region 109. The focus ring structure 135 includes a ring portion 135A, which is configured as a perfect circular hollow cylinder having a height H1, an inner diameter ID1, and a wall thickness WT1. The focus ring structure 135 may also include three radially extending structures 135B1, 135B2, 135B3, which are configured to extend radially outward from the outer surface of the ring portion 135A. The three radially extending structures 135B1, 135B2, 135B3 are spaced apart along the outer circumference of the ring portion 135A in a manner that enables stable vertical movement of the ring portion 135A to be provided by the three radially extending structures 135B1, 135B2, 135B3. The three radially extending structures 135B1, 135B2, 135B3 are configured to engage with three corresponding lifting components 137A, 137B, 137C to enable the focus ring structure 135 to be raised and lowered relative to the substrate support structure 103 when the focus ring structure 135 is placed in the plasma processing chamber 102. For example, the focus ring structure 135 can be raised relative to the substrate support structure 103 to place the substrate 101 on the substrate support structure 103 and to enable the substrate 101 to be removed from the substrate support structure 103. Figure 1E According to some exemplary embodiments, Figure 1D The focus ring structure 135 may be lowered relative to the substrate support structure 103 during processing of the substrate 101 to position the focus ring structure 135 close to the top surface of the substrate 101, such as Figure 1D shown.

[0097] In some embodiments, the focus ring structure 135 is configured to assist in focusing ions generated within the plasma within the plasma processing region 109 onto the surface of the substrate 101 held on the substrate support structure 103. The focusing of the ions provided by the focus ring structure 135 can increase the processing uniformity across the substrate 101 as well as at the edge of the substrate 101. In some embodiments, the focus ring structure 135 is formed of a ceramic material. In some embodiments, the focus ring structure 135 is formed of aluminum oxide. In some embodiments, the focus ring structure 135 is formed of silicon carbide. It should be understood that in various embodiments, the focus ring structure 135 can be formed of substantially any material having appropriate electrical properties to enable ions to be focused from the plasma within the plasma processing region 109 toward the substrate 101 during operation of the chamber 102, and chemically compatible with the materials that will be present in the plasma processing region 109 during operation of the chamber 102, and having mechanical and thermal stability in the presence of the temperatures and pressures that will be present in the plasma processing region 109 during operation of the chamber 102.

[0098] In some embodiments, liner structure 139 is located within plasma processing chamber 102 . Figure 1F An isometric view of an example of a bushing structure 139 located on a ground ring structure 133 according to some exemplary embodiments is shown. In some embodiments, the bushing structure 139 is configured to be in physical contact with the ground ring structure 133. The bushing structure 139 is configured to extend around at least a portion of a plasma processing region 109 within the plasma processing chamber 102. The bushing structure 139 has an inner surface 139A facing the plasma processing region 109. In some embodiments, the bushing structure 139 is formed of a ceramic material. In some embodiments, the bushing structure 139 is formed of aluminum oxide. In some embodiments, the bushing structure 139 is formed of silicon carbide. It should be understood that in various embodiments, the liner structure 139 can be formed essentially of any material having appropriate electrical properties compatible with the generation of a plasma within the plasma processing region 109 during operation of the chamber 102, chemically compatible with the materials that will be present in the plasma processing region 109 during operation of the chamber 102, and mechanically and thermally stable in the presence of the temperatures and pressures that will be present in the plasma processing region 109 during operation of the chamber 102.

[0099] In some embodiments, the liner structure 139 is configured to substantially cover and / or shield the inner surface of the wall 105 of the chamber 102 from materials that will be present in the plasma processing region 109 during operation of the chamber 102. More specifically, the liner structure 139 can be formed as a perfect round hollow cylinder and can include a plurality of cut-away portions, i.e., openings, where components can extend through the liner structure 139 and / or where a view will be provided through the liner structure 139. For example, the liner structure 139 includes an opening 140A to expose the plasma processing region 109 to the exhaust passage 121. In addition, the liner structure 139 includes openings 140B, 140C, and 140D to provide unobstructed vertical movement of the three radially extending structures 135B1, 135B2, 135B3 of the focus ring structure 135. In addition, the liner structure 139 includes an opening 140E at the location of the opening 106A in the wall 105 of the chamber 102 for inserting and removing the substrate 101 from the chamber 102. In addition, the liner structure 139 includes an opening 140F at the location of the opening 106B in the wall 105 of the chamber 102 to provide an unobstructed view of the interior of the chamber 102.

[0100] During the processing of substrate 101 in chamber 102, non-volatile by-product materials and / or low-volatile by-product materials may be generated in plasma processing region 109. In certain processes, a large amount of these non-volatile and / or low-volatile by-product materials may be generated. For example, in some processes, a lead zirconate titanate (PZT) film present on substrate 101 (e.g., a silicon substrate) is etched, and a large amount of non-volatile and / or low-volatile by-product materials are generated accordingly. And, in another example, in some processes, a platinum-based film present on substrate 101 is etched, and a large amount of non-volatile and / or low-volatile by-product materials are generated accordingly. In addition, it should be understood that other plasma-based processes performed on substrate 101 may cause a corresponding large amount of non-volatile and / or low-volatile by-product materials to be generated. The non-volatile and / or low-volatile by-product materials may adhere to the surfaces of various components in chamber 102. However, the non-volatile and / or low-volatile by-product materials may have poor adhesion or poor retention to the surfaces of various components within the chamber 102, resulting in the non-volatile and / or low-volatile by-product materials flaking and / or peeling off from the surfaces of various components within the chamber 102. Non-volatile and / or low-volatile by-product materials that flake off or peel off from the surfaces within the chamber 102 may cause serious problems, such as an increase in the number of particles on the substrate 101, which in turn may lead to device failure, which results in higher yield loss. The flaked or peeled non-volatile and / or low-volatile by-product materials may also cause problems when they are deposited on the top surface of the substrate support structure 103 or on a window used for optical observation of the plasma processing region 109 (e.g., for optical endpoint detection). The flaked or peeled non-volatile and / or low-volatile by-product materials may also cause problems when they are sucked into the exhaust pump and the associated exhaust mechanical system.

[0101] In addition, with the generation of non-volatile and / or low-volatile byproducts that tend to peel or strip off the surface of the components in the chamber 102, it may be necessary to frequently stop the use of the chamber 102 to clean these byproduct materials before the non-volatile and / or low-volatile byproduct materials accumulate to a level where peeling and / or stripping may occur. It should be understood that the need to frequently stop the use of the chamber 102 for cleaning will reduce the processing yield of the substrate 101. In addition, the non-volatile and / or low-volatile byproduct materials will withstand waferless automatic cleaning processing, which means that the chamber 102 needs to be opened and cleaned manually, which is both time-consuming and expensive. Moreover, the components in the chamber 102 may be formed of aluminum-based materials with external coatings, which may not be able to withstand frequent cleaning processes. For example, some components in the chamber 102 may be formed of anodized aluminum and / or have a coating, such as a yttrium oxide coating. The aggressive cleaning required to remove non-volatile and / or low-volatile byproduct materials from these components will strip off the anodized oxide / coating, thereby requiring these components to be re-anodized / re-coated after cleaning, which leads to increased costs. Likewise, each time a part must be re-anodized / re-coated, the base material of the part is consumed, which reduces the useful life of the part, i.e., each part can undergo a limited number of re-anodization / re-coating cycles. And, each time a part must be aggressively cleaned and / or re-anodized / re-coated, there is a risk that the part will be damaged and become unusable, which results in further expense.

[0102] Disclosed herein are components and processes for managing non-volatile and / or low-volatile byproduct materials generated within a plasma processing region 109 during various plasma-based processes on a substrate 101. In some embodiments, various components within the chamber 102 are formed of a ceramic material and are formed to have a roughened / textured outer surface. For example, in various embodiments, the top window structure 107 and / or the liner structure 139 and / or the edge ring structure 131 can be formed of a ceramic material and can be formed to have a roughened / textured outer surface exposed to the plasma processing region 109. The roughened / textured outer surface promotes the adhesion and retention of non-volatile and / or low-volatile byproduct materials. It should be understood that, with the non-volatile and / or low-volatile byproduct materials adhering to and retaining the surfaces of the components within the chamber 102, the chamber 102 can be operated for longer periods of time between cleanings. For example, the use of ceramic components with roughened / textured outer surfaces within the chamber 102 can improve the mean time to clean (MTBC) of the chamber 102 by up to 400% or more by preventing non-volatile and / or low-volatile byproduct materials from flaking or peeling off onto the substrate 101 and substrate support structure 103. Thus, the use of ceramic components with roughened / textured outer surfaces in the chamber 102 can reduce defect density on the substrate 101, enhance productivity, i.e., extend the availability of the chamber 102 and increase the processing throughput of the substrate 101 through the chamber 102, and extend component life by reducing the frequency of component cleaning and component repair cycles.

[0103] In addition, the use of uncoated ceramic materials for various components within the chamber 102 (e.g., the top window structure 107 and / or the liner structure 139 and / or the edge ring structure 131) can provide better control over surface roughness than the use of anodized / coated materials. More specifically, because the components must be anodized / coated after the surface roughening process of the components is completed, it is difficult to predict and control how the application of anodization / coating will affect the surface roughness previously applied to the components. For example, applying a coating to the surface of an already roughened / textured component may adversely smooth the surface. Moreover, applying a coating to the surface of a component after the surface has been roughened / textured can cause damage to the component by introducing stresses on the surface of the component that can cause the component to crack. In addition, after many refurbishment / cleaning cycles, ceramic components are more resilient than non-ceramic components because less ceramic component material is consumed in the refurbishment / cleaning process and subsequent re-roughening / re-texturing process. The resiliency of ceramic parts to aggressive refurbishment / cleaning processes can provide reduced costs because the bulk ceramic of the part can withstand many refurbishment / cleaning / re-roughening / re-texturing cycles.

[0104] In some embodiments, various components or portions thereof within the chamber 102 (e.g., the lower surface of the top window structure 107 exposed to the plasma processing region 109, and / or the liner structure 139, and / or the edge ring structure 131) are subjected to surface roughening / texturing, for example, to have a surface roughness average value (Ra) in the range from about 150 micro-inches to about 500 micro-inches. In some embodiments, various components or portions thereof within the chamber 102 (e.g., the lower surface of the top window structure 107 exposed to the plasma processing region 109, and / or the liner structure 139, and / or the edge ring structure 131) are subjected to surface roughening / texturing, for example, to have a surface roughness average value (Ra) in the range of about 500 micro-inches. The surface roughness average value (Ra) is the arithmetic mean of the absolute values ​​of the surface profile height deviations recorded along the surface average line within the evaluation length of the surface, as shown in Formula 1:

[0105] Formula 1.

[0106] Where L = evaluation length and Z(x) = profile height function.

[0107] In various embodiments, a surface textured plasma processing chamber component is disclosed. For example, the surface textured plasma processing chamber component includes a ceramic component that is configured to be placed in a plasma processing chamber, such as chamber 102. In some embodiments, the ceramic component of the surface textured plasma processing chamber component is formed of aluminum oxide. In some embodiments, the ceramic component of the surface textured plasma processing chamber component is formed of silicon carbide. However, it should be understood that in various embodiments, the ceramic component of the surface textured plasma processing chamber component can be formed of ceramic materials other than aluminum oxide or silicon carbide.

[0108] The ceramic component includes at least one rough surface, which is positioned to be exposed to plasma treatment byproduct materials when the ceramic component is placed in the plasma treatment chamber during operation of the plasma treatment chamber. The at least one rough surface is configured to promote adhesion of plasma treatment byproduct materials and ceramic components. The surface roughness average value (Ra) of the at least one rough surface is configured to promote adhesion of non-volatile and / or low-volatile plasma treatment byproduct materials and the at least one rough surface. In some embodiments, at least one rough surface has a surface roughness average value (Ra) extending from about 150 micro-inches to about 500 micro-inches. In some embodiments, at least one rough surface has a surface roughness average value (Ra) of about 500 micro-inches. Similarly, in some embodiments, the exposed ceramic material forming the ceramic component is exposed above at least one rough surface of the ceramic component.

[0109] In some embodiments, the improved adhesion of non-volatile and / or low-volatile byproduct materials to at least one rough surface is affected at the molecular level by increasing van der Waals forces. In contrast to at least one rough surface, a surface with low surface roughness (i.e., a smooth component surface) produces high surface tension energy, which is used to reject the adhesion of plasma treatment byproduct ions and / or molecules. In some embodiments, at least one rough surface configured to promote the adhesion of plasma treatment byproduct materials and ceramic components can have a high contact angle and a lower surface tension to promote the adhesion of plasma treatment byproduct ions and / or molecules. In addition, at least one rough surface of the ceramic component reduces the flaking and / or peeling of non-volatile and / or low-volatile byproduct materials from the ceramic component.

[0110] In some embodiments, at least one rough surface of a ceramic component is roughened by media blasting. In other words, the ceramic component is subjected to media blasting to form at least one rough surface on the ceramic component. In various embodiments, media blasting can be defined and performed to increase surface roughness, produce a high contact angle on the surface, and increase the total surface area of ​​the surface of the component subjected to media blasting. In various embodiments, media blasting can be defined and performed to impact a ceramic component, wherein the at least one rough surface is impacted with a medium, and the medium particularly includes one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramics, glass, walnut shells, pumice, steel sand, steel shot, aluminum shot, zinc shot, copper shot, shredded wire, garnet, silica sand, and staurolite. It should be understood that media blasting provides a prescribed roughness / texture applied substantially uniformly on the target surface area of ​​the component. Similarly, in some embodiments, media blasting can be performed in conjunction with a patterned mask to produce a prescribed surface topography on the target surface area of ​​the component. For example, a patterned mask can include a distribution of open areas through which a media jet material can pass to reach the surface of the component when the patterned mask is positioned over the component. The media jet material will remove some of the component material within the open areas of the patterned mask without removing component material protected by the patterned mask, thereby producing a prescribed surface topography on the target surface area of ​​the component.

[0111] It should be appreciated that the use of components formed from uncoated ceramics having roughened / textured exterior surfaces enhances the ability to refurbish such components. For example, to refurbish such components, media blasting may be performed (or re-performed) on the components to clean the components and re-roughen / re-texturize the exterior surfaces of the components. The ability to refurbish components by media blasting without re-coating the components avoids the expense of having to apply a coating to the components and avoids the creation of coating-induced stresses in the components that may result in mechanical failure of the components. Additionally, components may be refurbished multiple times, such as twenty times or more, by media blasting without compromising the mechanical integrity of the components by removing excessive component material. Additionally, in addition to or as an alternative to media blasting, at least one rough surface may also be formed, at least in part, by knurling the ceramic component prior to firing the ceramic component.

[0112] In some embodiments, the surface textured plasma processing chamber component is a top window structure 107 of chamber 102 . Figure 2 An isometric view of a bottom surface 107A of a top window structure 107 according to some embodiments of the present invention is shown. The top window structure 107 is a ceramic component mounted within the chamber 102, with the bottom surface 107A oriented to face the plasma processing region 109. As with the ceramic components described above, in various embodiments, the top window structure 107 can be formed of aluminum oxide, silicon carbide, or substantially any other ceramic material that is chemically, mechanically, thermally, and electrically compatible to function as the top window structure 107 during operation of the chamber 102. Furthermore, in some embodiments, the top window structure 107 is configured to function as a gas distribution plate to enable supply of process gases to the plasma processing region 109. In these embodiments, the top window structure 107 may include an internal arrangement of gas supply channels configured to direct process gas flow from one or more input ports located on the exterior of the top window structure 107, such as on a top surface or edge surface of the top window structure 107, to one or more output ports 107B, wherein the one or more input ports are located on the bottom surface 107A of the top window structure 107. In this manner, process gas may flow through the top window structure 107 and into the plasma processing region 109, wherein the top window structure 107 is used to spatially distribute the process gas into the plasma processing region 109 based on the spatial location and flow state (open or closed) of the one or more output ports 107B.

[0113] The bottom surface 107A of the top window structure 107 includes at least one rough surface 107C, which is positioned to be exposed to plasma processing byproduct materials when the top window structure 107 is placed in the chamber 102 during operation of the chamber 102. In some embodiments, the bottom surface 107A of the top window structure 107 includes a peripheral annular region 107D, which is configured to engage with a sealing component when the top window structure 107 is installed in the chamber 102. In some embodiments, the peripheral annular region 107D is smoothed to have a surface roughness average (Ra) of about 20 micro inches. In some embodiments, the area of ​​the bottom surface 107A inside the peripheral annular region 107D is at least one rough surface 107C, which is roughened / textured to have a surface roughness average (Ra) in a range extending from about 150 micro inches to about 500 micro inches. In some embodiments, at least one rough surface 107C is roughened / textured to have a surface roughness average (Ra) of about 500 micro inches. In some embodiments, after forming at least one rough surface 107C on bottom surface 107A and during use of top window structure 107 in chamber 102, top window structure 107 remains in the form of an uncoated bare ceramic component.

[0114] In some embodiments, the surface textured plasma processing chamber component is a liner structure 139 . Figure 3 An isometric view of a liner structure 139 according to some embodiments is shown. The liner structure 139 is configured to extend around at least a portion of the plasma processing region 109 within the chamber 102. In some embodiments, the liner structure 139 has an inner surface 139A that is at least one roughened surface positioned to be exposed to plasma processing byproduct materials when the liner structure 139 is placed within the chamber 102 during operation of the chamber 102. In some embodiments, the entire liner structure 139, including the inner surface 139A and the outer surface 139B, is roughened / textured to promote adhesion of the plasma processing byproduct materials and the liner structure 139.

[0115] In some embodiments, the liner structure 139 is a ceramic component installed in the chamber 102 to cover and protect the inner wall of the chamber 102. As with the ceramic components described above, in various embodiments, the liner structure 139 can be formed of aluminum oxide, silicon carbide, or substantially any other ceramic material that is chemically, mechanically, thermally, and electrically compatible to serve as the liner structure 139 during operation of the chamber 102. In some embodiments, after at least one rough surface is formed on the liner structure 139 and during use of the liner structure 139 in the chamber 102, the liner structure 139 remains in the form of an uncoated, bare ceramic component. In some embodiments, the liner structure 139 is roughened / textured to have a surface roughness average (Ra) in a range extending from about 150 micro-inches to about 500 micro-inches. In some embodiments, the liner structure 139 is roughened / textured to have a surface roughness average (Ra) of about 500 micro-inches.

[0116] In some embodiments, the surface textured plasma processing chamber component described above is a ring structure for mounting within the chamber 102, wherein the ring structure is configured to circumscribe the substrate support structure 103 within the chamber 102. In various embodiments, for example, the ring structure can be one or both of the focus ring structure 135 and the edge ring structure 131. The ring structure is characterized by having at least one process-exposed surface, which is one or both of an inner surface of the ring structure and an upper surface of the ring structure. The at least one process-exposed surface is at least one roughened surface positioned to be exposed to plasma processing byproduct materials when the ring structure is placed within the chamber 102 during operation of the chamber 102.

[0117] Figure 4 An isometric view of an edge ring structure 131 according to some embodiments is shown. The edge ring structure 131 is shown having a surface 131A ( Figure 413A), the process exposed surface 131A is at least one roughened surface that is positioned to be exposed to plasma processing byproduct material when the edge ring structure 131 is placed in the chamber 102 during operation of the chamber 102. In some embodiments, only the process exposed surface 131A of the edge ring structure 131 is roughened / textured. However, in some embodiments, portions of the edge ring structure 131 beyond the process exposed surface 131A may also be roughened / textured for ease of manufacturing. In some embodiments, the edge ring structure 131 is a ceramic component. As with the ceramic components described above, in various embodiments, the edge ring structure 131 may be formed of aluminum oxide, silicon carbide, or substantially any other ceramic material that is chemically, mechanically, thermally, and electrically compatible to function as the edge ring structure 131 during operation of the chamber 102. In some embodiments, after at least one roughened surface is formed on the edge ring structure 131 and during use of the edge ring structure 131 within the chamber 102, the edge ring structure 131 remains in the form of an uncoated, bare ceramic component. In some embodiments, the surface 131A of the edge ring structure 131 exposed to the treatment is roughened / textured to have a surface roughness average (Ra) in a range extending from about 150 micro-inches to about 500 micro-inches. In some embodiments, the surface 131A of the edge ring structure 131 exposed to the treatment is roughened / textured to have a surface roughness average (Ra) of about 500 micro-inches.

[0118] Figure 5An isometric view of a focus ring structure 135 according to some embodiments is shown. In some embodiments, an inner surface 135A1 of a ring portion 135A of the focus ring structure 135 is at least one roughened surface positioned to be exposed to plasma processing byproduct material when the focus ring structure 135 is placed within the chamber 102 during operation of the chamber 102. In some embodiments, in addition to the inner surface 135A1 of the ring portion 135A, top surfaces of radially extending structures 135B1, 135B2, 135B3 are also some of the at least one roughened surface positioned to be exposed to plasma processing byproduct material when the focus ring structure 135 is placed within the chamber 102 during operation of the chamber 102. Also, in some embodiments, the entire ring portion 135A of the focus ring structure 135 (including both the inner surface 135A1 and the outer surface 135A2 of the ring portion 135A) and the top surfaces of the radially extending structures 135B1, 135B2, 135B3 are at least one roughened surface positioned to be exposed to plasma processing byproduct materials when the focus ring structure 135 is placed within the chamber 102 during operation of the chamber 102. Also, in some embodiments, the entire outer surface of the focus ring structure 135 (including the ring structure 135A and the radially extending structures 135B1, 135B2, 135B3) constitutes at least one roughened surface positioned to be exposed to plasma processing byproduct materials when the focus ring structure 135 is placed within the chamber 102 during operation of the chamber 102.

[0119] In some embodiments, the focus ring structure 135 is a ceramic component. As with the ceramic components described above, in various embodiments, the focus ring structure 135 can be formed of aluminum oxide, silicon carbide, or substantially any other ceramic material that is chemically, mechanically, thermally, and electrically compatible for use as the focus ring structure 135 during operation of the chamber 102. In some embodiments, after forming at least one roughened surface on the focus ring structure 135 and during use of the focus ring structure 135 within the chamber 102, the focus ring structure 135 remains in the form of an uncoated, bare ceramic component. In some embodiments, one or more surfaces of the focus ring structure 135 exposed to processing are roughened / textured to have a surface roughness average (Ra) in a range extending from about 150 micro-inches to about 500 micro-inches. In some embodiments, one or more surfaces of the focus ring structure 135 exposed to processing are roughened / textured to have a surface roughness average (Ra) of about 500 micro-inches.

[0120] In some embodiments, the surface textured plasma processing chamber component described above may be a non-ceramic component, such as the ground ring structure 133 . Figure 6An isometric view of a ground ring structure 133 according to some embodiments of the present invention is shown. The ground ring structure 133 includes several process-exposed surfaces 133A, 133B, 133C that are exposed to plasma processing byproduct materials during operation of the chamber 102. The process-exposed surfaces 133A, 133B, 133C can be roughened / textured in the same manner as described above for the ceramic components to enhance adhesion of the byproduct materials to the ground ring structure 133. In some embodiments, the ground ring structure 133 is formed of aluminum, stainless steel, or another conductive material that is chemically, mechanically, thermally, and electrically compatible with the plasma processing operations performed with the chamber 102. In some embodiments, the above-described media blasting process can be used to roughen / texturize the process-exposed surfaces 133A, 133B, 133C of the ground ring structure. However, the type of media used for the ground ring structure 133 can be different from the type of media used for the ceramic components. For example, a media having a higher hardness can be used in the media blasting process to roughen / texture the surfaces 133A, 133B, 133C of the grounding ring structure 133 that are exposed to the process. In some embodiments, the surfaces 133A, 133B, 133C of the grounding ring structure 133 that are exposed to the process are roughened / textured to have a surface roughness average value (Ra) in a range extending from about 150 micro-inches to about 500 micro-inches. In some embodiments, the surfaces 133A, 133B, 133C of the grounding ring structure 133 that are exposed to the process are roughened / textured to have a surface roughness average value (Ra) of about 500 micro-inches. In some embodiments, the surfaces 133A, 133B, 133C of the grounding ring structure 133 that are exposed to the process remain uncoated after undergoing the roughening / texturing process and during use of the grounding ring structure 133 in the chamber 102. However, in some embodiments, the process exposed surfaces 133A, 133B, 133C of the ground ring structure 133 are coated after undergoing the roughening / texturing process, and the coated ground ring structure 133 is then used within the chamber 102. Additionally, in embodiments where the process exposed surfaces 133A, 133B, 133C of the ground ring structure 133 are to be coated, the roughening / texturing of the process exposed surfaces 133A, 133B, 133C prior to coating can be defined to ensure that a specified surface roughness average (Ra) is retained on the process exposed surfaces 133A, 133B, 133C after coating. In some embodiments, the coating applied to the roughened / textured process exposed surfaces 133A, 133B, 133C of the ground ring structure 133 is a yttria coating, or an anodic oxidation coating, or another type of coating that is chemically, mechanically, thermally, and electrically compatible with the plasma processing performed within the chamber 102.

[0121] It is to be understood that embodiments disclosed herein include embodiments of plasma processing chambers (e.g., chamber 102) that include one or more components having at least one process-exposed surface configured to have a surface roughness / texture that promotes adhesion of plasma processing byproduct materials to the process-exposed surface. Additionally, it is to be understood that embodiments disclosed herein include operations of plasma processing chambers that include one or more components having a roughened / textured process-exposed surface during plasma processing operations that produce non-volatile and / or low-volatile byproduct materials. For example, Figure 7 A flow chart of a method for plasma treatment of a substrate according to some embodiments is shown. The method includes an operation 701 for equipping a plasma processing chamber (i.e., chamber 102) comprising a substrate support structure 103 and a top window structure 107. The substrate support structure 103 is configured to keep the substrate 101 exposed to the plasma to be generated in the plasma processing region 109. The top window structure 107 is located above the substrate support structure 103 to establish the plasma processing region 109 between the substrate support structure 103 and the top window structure 107. The top window structure 107 is formed of a ceramic material and has a bottom surface 107A facing the plasma processing region 109. In various embodiments, the top window structure 107 is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of the chamber 102. The bottom surface 107A of the top window structure 107 has a surface roughness / texture that promotes adhesion of plasma processing byproduct materials to the bottom surface 107A. In some embodiments, the bottom surface 107A of the top window structure 107 has a surface roughness average (Ra) in a range extending from about 150 micro-inches to about 500 micro-inches. In some embodiments, the bottom surface 107A of the top window structure 107 has a surface roughness average (Ra) of about 500 micro-inches. In some embodiments, the bottom surface 107A of the top window structure 107 has a surface roughness average (Ra) greater than 500 micro-inches. In some embodiments, the bare ceramic material forming the top window structure 107 is exposed at the bottom surface 107A of the top window structure 107.

[0122] The method also includes an operation 703 for generating a plasma in the plasma processing region 109, such that components of the plasma interact with materials on the substrate 101 to generate plasma processing byproduct materials, and some of the plasma processing byproduct materials adhere to the bottom surface 107A of the top window structure 107. In some embodiments, the material on the substrate 101 is a lead zirconate titanate (PZT) film. In some embodiments, the material on the substrate 101 is a platinum (Pt) film. In some embodiments, the material on the substrate 101 is a film that causes a large amount of byproduct deposition within the chamber 102 when exposed to the plasma generated in operation 703.

[0123] In some embodiments, generating plasma in operation 703 may include applying RF power to the processing gas in the plasma processing region 109. In some embodiments, the applied RF power may be in the range of extending from about 400 watts (W) to about 1250W. However, it should be understood that in various embodiments, the applied RF power may be less than 400W or greater than 1250W. In some embodiments, the RF power is applied by a RF signal having a frequency of about 13.56MHz. However, it should be understood that in various embodiments, the RF power may be applied by a RF signal having a frequency other than 13.56MHz. Moreover, in some embodiments, the method may include an operation for generating a bias voltage at the substrate support structure 103. In some embodiments, the bias voltage is generated in the range of from about 100 volts (V) to about 600V. It should be understood that in various embodiments, the bias voltage may be less than 100V or greater than 600V. Moreover, in some embodiments, the bias voltage may be generated by a RF signal having a frequency of about 13.56MHz. However, it should be understood that in various embodiments, the bias voltage may be generated by a radio frequency signal having a frequency other than 13.56 MHz. Also, in various embodiments, the bias voltage may be generated by a DC power supply.

[0124] Additionally, in some embodiments, the method may include an operation for maintaining a temperature of the substrate support structure 103 within a range from about 40 degrees Celsius (° C.) to about 100° C. However, it should be understood that in various embodiments, the temperature of the substrate support structure 103 can be maintained at less than 40° C. or greater than 100° C. Also, in some embodiments, the method may include an operation for maintaining a pressure within the plasma processing region 109 within a range from about 5 mTorr to about 50 mTorr. However, it should be understood that in various embodiments, the pressure within the plasma processing region 109 can be maintained at less than 5 mTorr or greater than 50 mTorr.

[0125] In some embodiments, generating the plasma in operation 703 includes supplying a process gas to the plasma processing region 109, wherein the process gas is one or more of chlorine (Cl2), boron trichloride (BCl3), argon (Ar), carbon tetrafluoride (CF4), oxygen (O2), trifluoromethane (CHF3), and sulfur hexafluoride (SF6). In some embodiments, generating the plasma in operation 703 includes supplying chlorine (Cl2) to the plasma processing region 109 at a flow rate in a range extending from about 20 standard cubic centimeters per minute (sccm) to about 300 sccm. In some embodiments, generating the plasma in operation 703 includes supplying boron trichloride (BCl3) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 300 sccm. In some embodiments, generating the plasma in operation 703 includes supplying argon (Ar) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 300 sccm. In some embodiments, generating the plasma in operation 703 includes supplying carbon tetrafluoride (CF4) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 200 sccm. In some embodiments, generating the plasma in operation 703 includes supplying oxygen (O2) to the plasma processing region 109 at a flow rate in a range extending from about 20 sccm to about 300 sccm. In some embodiments, generating the plasma in operation 703 includes supplying trifluoromethane (CHF3) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 300 sccm. In some embodiments, generating the plasma in operation 703 includes supplying sulfur hexafluoride (SF6) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 300 sccm.

[0126] like Figure 7The illustrated method for plasma processing of a substrate may also include using a liner structure 139 within the chamber 102, wherein the liner structure 139 is configured to extend around at least a portion of the plasma processing region 109 within the chamber 102. In this method, the liner structure 139 has an inner surface 139A positioned to be exposed to plasma processing byproduct materials. The inner surface 139A of the liner structure 139 has a surface roughness that promotes adhesion of the plasma processing byproduct materials to the inner surface 139A of the liner structure 139. In various embodiments, the liner structure 139 is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of the chamber 102. In some embodiments, the surface roughness average (Ra) of the inner surface 139A of the liner structure 139 is in a range extending from about 150 micro-inches to about 500 micro-inches. In some embodiments, the inner surface 139A of the liner structure 139 has a surface roughness average (Ra) of about 500 micro-inches. In some embodiments, the inner surface 139A of the bushing structure 139 has a surface roughness average (Ra) greater than 500 micro-inches. In some embodiments, bare ceramic material forming the bushing structure 139 is exposed at the inner surface 139A of the bushing structure 139 .

[0127] It should be appreciated that the use of an uncoated ceramic liner structure 139 having an engineered surface roughness / texture that enables and promotes adhesion of plasma processing byproduct materials eliminates the difficulty and expense of having to refurbish a coated liner structure (e.g., a hard anodized aluminum liner structure having a yttria coating). Furthermore, the use of an uncoated ceramic liner structure 139 having an engineered surface roughness / texture that enables and promotes adhesion of plasma processing byproduct materials extends the life of the liner structure 139 by eliminating the risk of increased mechanical failure that may result from stresses induced within the liner structure 139 during refurbishment and re-coating processes (e.g., in refurbishment and re-coating processes used in conjunction with a hard anodized aluminum chamber liner structure having a yttria coating).

[0128] like Figure 7The illustrated method for plasma processing of a substrate may also include using a ring structure within the chamber 102, wherein the ring structure is configured to be circumscribed to a substrate support structure 103 within the chamber 102. The ring structure has at least one surface exposed to processing, which is one or both of an inner surface and an upper surface of the ring structure. The surface exposed to processing is positioned to be exposed to plasma processing byproduct materials. Moreover, the surface exposed to processing of the ring structure has a surface roughness that enables and promotes adhesion of plasma processing byproduct materials to the surface exposed to processing of the ring structure. In some embodiments, the ring structure is a focus ring structure 135. In some embodiments, the ring structure is an edge ring structure 131. In some embodiments, the ring structure is a grounding ring structure 133. In some embodiments, the ring structure is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of the chamber 102. In some embodiments in which the ring structure is formed of a ceramic material, the exposed ceramic material forming the ring structure is exposed to the roughened / textured surface exposed to processing of the ring structure. In some embodiments, the ring structure is formed of a conductive material, such as aluminum or stainless steel or another metallic material that is chemically, mechanically, thermally, and electrically compatible with the operation of chamber 102. In some embodiments in which the ring structure is formed of a conductive material, the roughened / textured surface of the ring structure exposed to the treatment can remain uncoated when the ring structure is used in chamber 102. Alternatively, in some embodiments in which the ring structure is formed of a conductive material, the roughened / textured surface of the ring structure exposed to the treatment can be coated when the ring structure is used in chamber 102. In some embodiments, the coating applied to the conductive ring structure is a yttrium oxide coating, or an anodic oxide, or another type of coating that is chemically, mechanically, thermally, and electrically compatible with the operation of chamber 102. In some embodiments, the surface of the ring structure exposed to the treatment has a surface roughness average (Ra) in a range extending from about 150 micro-inches to about 500 micro-inches. In some embodiments, the surface of the ring structure exposed to the treatment has a surface roughness average (Ra) of about 500 micro-inches. In some embodiments, the surface of the ring structure exposed to the treatment has a surface roughness average (Ra) greater than 500 microinches.

[0129] The use of components with engineered surface roughness / texture within the chamber 102 to promote adhesion of non-volatile and / or low volatility plasma processing byproduct materials to the components has been shown to provide a number of process improvements. For example, in PZT and Pt etch processes where large amounts of non-volatile and / or low volatility plasma processing byproduct materials are generated, the use of components with engineered surface roughness / texture in the chamber 102 showed the following improvements: Improves the etching uniformity of the entire substrate 101, Better etch control to reduce unnecessary removal of the landing layer (Pt) during the main etch step or over-etch step, Better etching repeatability between substrates and batches, Better etching results due to minimizing flaking and / or stripping of non-volatile and / or low-volatile byproduct materials onto the substrate support structure 103, which helps avoid clamping issues with the substrate 101, Reduce the photoresist network structure, Better etch profile control due to more consistent photoresist erosion, Minimize the etching defects caused by the micro mask on the substrate 101, Preventing the substrate 101 clamping problem caused by insufficient clamping force, Better heat dissipation and cooling of the back side of substrate 101, preventing hot spots on the etched substrate 101, better retaining non-volatile and / or low-volatile etch byproduct materials on the top window structure 107, the bushing structure 139, the grounding ring structure 133, and the edge ring structure 131, which helps prevent the non-volatile and / or low-volatile etch byproduct materials from flaking and / or peeling off onto the substrate support structure 101 and / or the substrate 101, and Costs are reduced by eliminating external coatings on the top window structure 107 and the liner structure 139 .

[0130] Figure 8 A flow chart of a method for making a surface textured plasma processing chamber component according to some embodiments is shown. The method includes an operation 801 for forming a ceramic component for installation in a plasma processing chamber, such as in chamber 102, wherein the ceramic component has at least one surface exposed to processing. In some embodiments, the ceramic component is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of chamber 102. In various embodiments, the ceramic component is a top window structure 107, a liner structure 139, a focus ring structure 135, or an edge ring structure 131.

[0131] The method also includes an operation 803, which is used to roughen at least one surface exposed to treatment to have a surface roughness that promotes the adhesion of plasma treatment byproduct materials to at least one surface exposed to treatment. In some embodiments, operation 803 is performed to give a surface roughness average value (Ra) ranging from about 150 micro-inches to about 500 micro-inches to at least one surface exposed to treatment of the ceramic component. In some embodiments, operation 803 is performed to give a surface roughness average value (Ra) greater than 500 micro-inches to at least one surface exposed to treatment of the ceramic component. In some embodiments, the operation 803 for roughening at least one surface exposed to treatment is completed by media sandblasting. In some embodiments, the media sandblasting is performed by impacting the at least one surface exposed to treatment with a medium, and the medium includes one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramics, glass, walnut shells, pumice, steel sand, steel shot, aluminum shot, zinc shot, copper shot, wire cut, garnet, silica sand and staurolite. In some embodiments, operation 801 for forming a ceramic component includes performing a knurling process on the ceramic component before firing the ceramic component, wherein the knurling process is defined as imparting a texture to at least one surface of the ceramic component exposed to the process. In some embodiments, in operation 803, bare ceramic material forming the ceramic component is exposed to at least one surface exposed to the process after the at least one surface exposed to the process is roughened.

[0132] Fig. 9 A flow chart of a method for converting a coated plasma processing chamber component into a surface textured plasma processing chamber component according to some embodiments is shown. The method includes an operation 901 for stripping a coating from a ceramic component to a bare ceramic material forming the ceramic component. The ceramic component is configured for installation in a plasma processing chamber, such as in chamber 102. In addition, the ceramic component has at least one surface exposed to processing. In some embodiments, the ceramic component is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of chamber 102. In various embodiments, the ceramic component is a top window structure 107, a bushing structure 139, a focus ring structure 135, or an edge ring structure 131.

[0133] The method also includes an operation 903 for roughening at least one surface of the ceramic component exposed to the treatment to have a surface roughness that promotes adhesion of plasma treatment byproduct materials to the at least one surface exposed to the treatment. In some embodiments, operation 903 is performed to impart a surface roughness average value (Ra) extending from about 150 micro-inches to about 500 micro-inches to at least one surface of the ceramic component exposed to the treatment. In some embodiments, operation 903 is performed to impart a surface roughness average value (Ra) greater than 500 micro-inches to at least one surface of the ceramic component exposed to the treatment.

[0134] In some embodiments, operation 903 for roughening at least one surface exposed to treatment is completed by media sandblasting. In some embodiments, the media sandblasting uses a medium to impact the at least one surface exposed to treatment, and the medium includes one or more of aluminum oxide, silicon carbide, broken glass grit, glass beads, ceramics, glass, walnut shells, pumice, steel sand, steel shot, aluminum shot, zinc shot, copper shot, shredded wire, garnet, silica sand and staurolite. In some embodiments, in operation 903, the exposed ceramic material forming the ceramic part is exposed to the at least one surface exposed to treatment after the roughening of the surface exposed to treatment. In addition, in some embodiments, operation 901 for stripping the coating from the ceramic part is completed using media sandblasting. And, in some embodiments, both operations 901 and 903 are performed simultaneously using the same media sandblasting.

[0135] Prior to the surface roughening / texturing embodiments disclosed herein, the focus ring structure 135 is typically formed to have relatively smooth, featureless surfaces on both the inner and outer surfaces of the ring portion 135A and the radially extending structures 135B1, 135B2, 135B3. Non-volatile and / or low-volatile plasma processing byproduct materials have difficulty adhering to smooth, featureless surfaces. For example, in plasma-based etching of a PZT film or a Pt film on the substrate 101, a large amount of non-volatile and / or low-volatile etching byproduct materials are generated and have poor adhesion to the focus ring structure 135 that is conventionally formed to have a smooth, featureless surface. When the plasma processing byproduct materials accumulate on the focus ring structure 135, they may flake and / or peel off and land on the substrate 101 and / or the substrate support structure 103 due to the close proximity of the focus ring structure 135 to both the substrate 101 and the substrate support structure 103. Allowing plasma processing byproduct materials to land on the substrate 101 may damage the substrate 101 or cause defects to form in structures formed on the substrate 101. In addition, allowing plasma processing byproduct materials to be deposited on the substrate support structure 103, especially when the substrate 101 is not present on the substrate support structure 103, may interfere with proper clamping of the substrate 101 on the substrate support structure 103, and may cause undesirably high helium gas flow on the back side of the substrate 101, i.e., in the region between the substrate 101 and the substrate support structure 103, either of which may cause defects to form on the substrate 101.

[0136] As previously discussed, in various embodiments, roughening / texturing the surface of the focus ring structure 135 may promote and substantially improve adhesion of plasma processing byproduct material to the focus ring structure 135, thereby accommodating a greater accumulation of plasma processing byproduct material on the focus ring structure 135 before flaking and / or peeling of the plasma processing byproduct material from the focus ring structure 135 occurs. Thus, the roughening / texturing of the surface of the focus ring structure 135 serves to delay the onset of flaking and / or peeling of the plasma processing byproduct material from the focus ring structure 135. However, continuing to further increase the roughness / texture of the focus ring structure 135 may have a diminishing effect on increasing the average time until flaking and / or peeling of the plasma processing byproduct material from the focus ring structure 135 occurs.

[0137] Because the focus ring structure 135 is located near and above the substrate 101 and the substrate support structure 103, special attention is paid to preventing plasma processing byproducts from flaking and / or peeling off from the focus ring structure 135. In this regard, Fig. 10AAn isometric view of a focus ring structure 135-1 having a controlled surface topography variation on an inner surface 135-1A1 of a ring portion 135-1A of the focus ring structure 135-1 is shown according to some embodiments to promote adhesion of plasma processing byproduct materials to the focus ring structure 135-1. Figure 1D , 1E 5, the focus ring structure 135-1 includes a ring portion 135-1A and three radially extending structures 135B1, 135B2, 135B3. The ring portion 135-1A is configured as a perfect circular hollow cylinder to inscribe the substrate support structure 103 inside and outside the chamber 102. The radially extending structures 135B1, 135B2, 135B3 are configured to extend radially outward from the outer surface 135-1A2 of the ring portion 135-1A. The radially extending structures 135B1, 135B2, 135B3 are configured to engage with three corresponding lifting components 137A, 137B, 137C to enable the focus ring structure 135-1 to be raised and lowered relative to the substrate support structure 103. The focus ring structure 135-1 is formed of a ceramic material. In various embodiments, the focus ring structure 135 can be formed of aluminum oxide, silicon carbide, or substantially other ceramic materials that are chemically, mechanically, thermally, and electrically compatible for use as the focus ring structure 135 during operation of the chamber 102 .

[0138] When the focus ring structure 135-1 is placed within the chamber 102 during operation of the chamber 102, the inner surface 135-1A1 of the ring portion 135-1A is positioned to be exposed to plasma processing byproduct material within the plasma processing region 109. The inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 is formed to have controlled surface topography variations that promote adhesion of plasma processing byproduct material to the inner surface 135-1A1. In some embodiments, the controlled surface topography variations formed on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 include a lattice of protruding structures 1001 that extend inwardly to the area defined by the ring portion 135-1A, i.e., inwardly toward the plasma processing region 109. Fig. 10A In FIG. 1 , the protruding structures 1001 are shown as light-colored structures arranged in a dot pattern. A typical protruding structure 1001 is shown in FIG. Fig. 10A The reference number 1001 is used in the figure. Fig. 10B According to some embodiments, Fig. 10A A perspective view of the focus ring structure 135-1. Fig. 10B It is shown how the dot pattern of protrusion structures 1001 extends around the entire circumference of the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1. Fig. 10C According to some embodiments, Fig. 10A A top view of the focusing ring structure 135-1. Fig. 10D According to some embodiments, Fig. 10C The detailed view 1003 referenced in . Fig. 10D As shown, in some embodiments, the protrusion structure 1001 is formed to have a dome shape. However, it should be understood that in various embodiments, the protrusion structure 1001 can be formed to have substantially any geometric shape that is conducive to promoting and enhancing the adhesion and retention of plasma processing byproduct materials on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1.

[0139] Fig.10E A cross-sectional view through two adjacent protrusion structures 1001 is shown according to some embodiments. In some embodiments, each protrusion structure 1001 extends inwardly toward the area defined by the ring portion 135-1A of the focus ring structure 135-1 by a distance (d1), and the distance (d1) is in the range of extending from about 0.5 millimeters (mm) to about 2 mm, or in the range of extending from about 1 mm to about 2 mm, or is about 1 mm. In some embodiments, the distance (d2) between adjacent protrusion structures 1001 is in the range of extending from about 0.5 mm to about 2 mm. In some embodiments, the distance (d2) between adjacent protrusion structures 1001 is about 1 mm. In some embodiments, the base width (d3) of each protrusion structure 1001 is in the range of about 1 mm extending to about 3 mm, or about 2 mm extending to about 3 mm, or about 2.5 mm, where the base width (d3) is measured radially across the protrusion structure 1001 at the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1. In some embodiments, the tolerance of the size and spacing of the protrusion structures 1001 is about 10% of the specified size.

[0140] Fig.10F A vertical cross section through the center of the focus ring structure 135-1 is shown according to some embodiments. Fig.10F In the example of FIG. 1 , the protruding structures 1001 are arranged in a rectangular lattice including five rows. In other embodiments, the protruding structures 1001 may be arranged in a rectangular lattice including less than five rows or more than five rows. Figure 10GA diagram is shown for forming protrusion structures 1001 in a rectangular lattice on an inner surface 135-1A1 of a ring portion 135-1A of a focus ring structure 135-1 according to some embodiments. The rectangular lattice is characterized in that, in the horizontal direction (x) and in the vertical direction (y) of the inner surface 135-1A1 of the ring portion 135-1A surrounding the focus ring structure 135-1, as shown by rectangle 1005, there are protrusion structures 1001 positioned in a repeating rectangular pattern. In the rectangular lattice, the protrusion structures 1001 are spaced apart by a distance 1007 in the horizontal direction (x) and by a distance 1009 in the vertical direction (y), wherein distance 1007 is greater than distance 1009. In some embodiments, distances 1007 and 1009 are in a range extending from about 0.5 mm to about 2 mm. In some embodiments, distance 1009 is approximately 1 mm. Figure 10G In the example of FIG. 1 , the rectangular lattice of the protruding structure 1001 has five rows (R1 to R5). However, it should be understood that in various embodiments, the rectangular lattice of the protruding structure 1001 may have two or more rows.

[0141] In addition to Figure 10G In addition to the rectangular lattice shown, in some embodiments, the protrusion structures 1001 can be arranged on the inner surface 135-1A1 of the ring portion 135-1A of the focusing ring structure 135-1 in a square lattice, a hexagonal lattice, a parallelogram lattice, or a diamond lattice. Fig. 10H A diagram is shown for forming protrusion structures 1001 in a square lattice on an inner surface 135-1A1 of a ring portion 135-1A of a focus ring structure 135-1 according to some embodiments. The square lattice is characterized in that, in the horizontal direction (x) and in the vertical direction (y) around the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1, as shown by square 1011, there are protrusion structures 1001 configured in a repeating square pattern. In the square lattice, the protrusion structures 1001 are spaced apart by a distance 1013 in the horizontal direction (x) and by a distance 1015 in the vertical direction (y), wherein the distance 1013 is substantially equal to the distance 1015. In some embodiments, the distances 1013 and 1015 are in a range extending from about 0.5 mm to about 2 mm. In some embodiments, the distances 1013 and 1015 are about 1 mm. Fig. 10H In the example of FIG. 1 , the square lattice of the protruding structure 1001 has five rows (R1 to R5). However, it should be understood that in various embodiments, the square lattice of the protruding structure 1001 may have two or more rows.

[0142] Fig.10IA diagram is shown for forming protrusion structures 1001 in a hexagonal lattice on an inner surface 135-1A1 of a ring portion 135-1A of a focus ring structure 135-1 according to some embodiments. The hexagonal lattice is characterized in that in the horizontal direction (x) and in the vertical direction (y) around the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1, there are protrusion structures 1001 arranged in a repeating equilateral triangle pattern, wherein adjacent equilateral triangles of the pattern are reversed in the vertical direction (y), as shown by equilateral triangle 1017. In the hexagonal lattice, adjacent protrusion structures 1001 are spaced apart from each other by a distance 1019. In some embodiments, the distance 1019 is in a range extending from about 0.5 mm to about 2 mm. In some embodiments, the distance 1019 is about 1 mm. Fig.10I In the example of FIG. 1 , the hexagonal lattice of the protrusion structure 1001 has five rows (R1 to R5). However, it should be understood that in various embodiments, the hexagonal lattice of the protrusion structure 1001 may have two or more rows.

[0143] Fig.10J A diagram for forming protrusion structures 1001 in a parallelogram lattice on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 is shown according to some embodiments. The parallelogram lattice is characterized by having protrusion structures 1001 arranged in a repeating parallelogram pattern in the horizontal direction (x) and in the vertical direction (y) around the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1, wherein adjacent parallelograms of the pattern have the same vertices, as represented by parallelograms 1021. The parallelograms 1021 defining the parallelogram lattice have two horizontal parallel sides of equal length 1023, which are positioned to extend substantially in the horizontal direction (x), and have two inclined parallel sides of equal length 1025, which are positioned to extend at an angle 1027 between the two horizontal parallel sides. In the parallelogram lattice, adjacent protrusion structures 1001 are spaced apart from each other by three distances 1029, 1031, 1033. In some embodiments, the distances 1029, 1031, 1033 are in a range extending from about 0.5 mm to about 2 mm. In some embodiments, the minimum distance among the distances 1029, 1031, 1033 is about 1 mm. Fig.10J In the example of FIG. 1 , the parallelogram lattice of the protruding structure 1001 has five rows (R1 to R5). However, it should be understood that in various embodiments, the parallelogram lattice of the protruding structure 1001 may have two or more rows.

[0144] Figure 10KA diagram for forming protrusion structures 1001 in a diamond lattice on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 according to some embodiments is shown. The diamond lattice is characterized in that there are protrusion structures 1001 arranged in a repeated diamond pattern in the horizontal direction (x) and in the vertical direction (y) around the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1, wherein adjacent diamonds of the pattern have the same vertices, as represented by diamonds 1035. The diamonds 1035 defining the diamond lattice are parallelograms having opposite and equal acute angles 1037 and opposite and equal obtuse angles 1039, and four sides having equal lengths 1041. In the diamond lattice, adjacent protrusion structures 1001 are separated from each other by two distances 1043 and 1045. In some embodiments, distances 1043 and 1045 are within a range extending from about 0.5 mm to about 2 mm. In some embodiments, the minimum distance between distances 1043 and 1045 is about 1 mm. Figure 10K In the example of , the diamond lattice of the protrusion structure 1001 has nine rows (R1 to R9). In some embodiments, the diamonds 1035 are configured so that the protrusion structures 1001 in vertically adjacent rows (e.g., R1 to R9) do not overlap each other in the vertical direction (y). However, in some embodiments, the diamonds 1035 are configured so that the protrusion structures 1001 in vertically adjacent rows (e.g., R1 to R9) do have a certain amount of overlap with each other in the vertical direction (y). It should be understood that in various embodiments, the diamond lattice of the protrusion structure 1001 can have three or more rows.

[0145] In some embodiments, the controlled surface topography variation on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 is formed by media blasting. In some embodiments, a protective mask is applied to the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 to cover the location where the protrusion structure 1001 is to be formed. Then, the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 is media blasted to remove (i.e., erode) the ceramic material layer forming the focus ring structure 135-1 from the inner surface 135-1A1, thereby forming the protrusion structure 1001 on the inner surface 135-1A1. Then, the protective mask is removed. In some embodiments, the media blasting used to form the protruding structures 1001 simultaneously roughens / textures portions of the inner surface 135-1A1 between and around the protruding structures 1001 to promote adhesion of plasma processing byproduct materials to the inner surface 135-1A1. In various embodiments, the media used in the media blasting to form the protruding structures 1001 may include one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramics, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, shredded wire, garnet, silica sand, and staurolite, among others. Moreover, in some embodiments, the surface of the focus ring structure 135-1 beyond the inner surface 135-1A1 may be subjected to media blasting to have a specified surface roughness average (Ra). For example, in some embodiments, the entirety of ring portion 135-1A and the top surfaces of radially extending structures 135B1, 135B2, 135B3 may be media blasted to have a specified surface roughness average (Ra) within a range extending from about 150 microinches to about 500 microinches.

[0146] In some embodiments, the protruding structures 1001 can be formed by performing a knurling process on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 when the ceramic material forming the focus ring structure 135-1 is in a soft, unfired state before the ceramic is fired. Knurling is a manufacturing process in which a pattern of a certain depth is formed in the material in a soft, ductile state. After knurling and firing of the ceramic material of the focus ring structure 135-1, the protruding structures 1001 will exist on the inner surface 135-1A1 of the ring portion 135-1A. The focus ring structure 135-1 can then be subjected to the above-mentioned media blasting process to impart a specified surface roughness average value (Ra) to the ring portion 135-1A and the radially extending structures 135B1, 135B2, 135B3 of the focus ring structure 135-1. The protrusion structure 1001 and the surface roughness average (Ra) of the bare ceramic material imparted to the focus ring structure 135-1 enable the focus ring structure 135-1 to be used in a bare, uncoated form within the chamber 102, which eliminates the costs and risks associated with coating and re-coating of the focus ring structure 135-1.

[0147] It should be appreciated that forming the protrusions 1001 on the inner surface 135-1A1 of the ring portion 135-1A significantly increases the surface area of ​​the focus ring structure 135-1 to which plasma processing byproduct materials can adhere. For example, in some embodiments, the arrangement of the protrusions 1001 can be defined in a manner that increases the surface area of ​​the inner surface 135-1A1 of the ring portion 135-1A by 400% or more, which provides an intentional and contrasting surface topography on which a large number of plasma processing byproducts can deposit and adhere. Likewise, the surface roughness average (Ra) imparted to the focus ring structure 135-1 by media blasting provides a robust, textured surface to better adhere non-volatile and / or low-volatile plasma processing byproduct materials to the focus ring structure 135-1. It should be appreciated and understood that the enhanced adhesion and retention of plasma processing byproduct materials to the focus ring structure 135-1 results in an increased mean time between cleanings (MTBC) of the chamber 102, which improves manufacturing yields for the substrates 101. Furthermore, the ability to use the focus ring structure 135-1 as a bare, uncoated ceramic component within the chamber 102 extends the useful life of the focus ring structure 135-1 by eliminating the need to remove coating material from the focus ring structure 135-1 during refurbishment of the focus ring structure 135-1.

[0148] Fig.11A flow chart of a method for plasma treatment of a substrate according to some embodiments is shown. The method includes an operation 1101 for equipping a plasma processing chamber (i.e., chamber 102) that includes a substrate support structure 103 and a focus ring structure 135-1. The focus ring structure 135-1 includes a ring portion 135-1A formed of a ceramic material. In various embodiments, the focus ring structure 135-1 is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with operation with the chamber 102. The ring portion 135-1A is configured to externally connect the substrate support structure 103 within the chamber 102. The ring portion 135-1A has an inner surface 135-1A1 positioned to be exposed to a plasma processing region 109, where plasma processing byproduct material 102 is generated during operation of the chamber 102. The inner surface 135-1A1 is formed to have a controlled surface topography variation that promotes adhesion of plasma processing byproduct materials to the inner surface 135-1A1. In some embodiments, the focus ring structure 135-1 has a surface roughness average (Ra) in a range extending from about 150 micro-inches to about 500 micro-inches. In some embodiments, the focus ring structure 135-1 has a surface roughness average (Ra) of about 500 micro-inches. In some embodiments, the exposed ceramic material forming the focus ring structure 135-1 is exposed at an outer surface of the focus ring structure 135-1, and particularly at an inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1.

[0149] The method also includes an operation 1103 for generating plasma in the plasma processing region 109, so that components of the plasma interact with materials on the substrate 101 to generate plasma processing byproduct materials, and some of the plasma processing byproduct materials adhere to the focus ring structure 135-1. In some embodiments, the material on the substrate 101 is a lead zirconate titanate (PZT) film. In some embodiments, the material on the substrate 101 is a platinum (Pt) film. In some embodiments, the material on the substrate 101 is a film that causes a large amount of byproduct deposition within the chamber 102 when exposed to the plasma generated in operation 1103.

[0150] In some embodiments, generating plasma in operation 1103 may include applying RF power to the processing gas in the plasma processing region 109. In some embodiments, the applied RF power may be in the range of from about 400W to about 1250W. However, it should be understood that in various embodiments, the applied RF power may be less than 400W or greater than 1250W. In some embodiments, the RF power is applied by a RF signal having a frequency of about 13.56MHz. However, it should be understood that in various embodiments, the RF power may be applied by a RF signal having a frequency other than 13.56MHz. In addition, in some embodiments, the method may include an operation for generating a bias voltage at the substrate support structure 103. In some embodiments, the bias voltage is generated in the range of from about 100V to about 600V. However, it should be understood that in various embodiments, the bias voltage may be less than 100V or greater than 600V. In addition, in some embodiments, the bias voltage may be generated by a RF signal having a frequency of about 13.56MHz. However, it should be understood that in various embodiments, the bias voltage may be generated by a radio frequency signal having a frequency other than 13.56 MHz. Also, in various embodiments, the bias voltage may be generated by a DC power supply.

[0151] Additionally, in some embodiments, the method may include operations for maintaining a temperature of the substrate support structure 103 within a range extending from about 40° C. to about 100° C. However, it should be understood that in various embodiments the temperature of the substrate support structure 103 may be maintained at less than 40° C. or greater than 100° C. Also, in some embodiments, the method may include operations for maintaining a pressure within the plasma processing region 109 within a range extending from about 5 mTorr to about 50 mTorr. However, it should be understood that in various embodiments the pressure within the plasma processing region 109 may be maintained at less than 5 mTorr or greater than 50 mTorr.

[0152] In some embodiments, generating the plasma in operation 1103 includes supplying a process gas to the plasma processing region 109, wherein the process gas is one or more of chlorine (Cl2), boron trichloride (BCl3), argon (Ar), carbon tetrafluoride (CF4), oxygen (O2), trifluoromethane (CHF3), and sulfur hexafluoride (SF6). In some embodiments, generating the plasma in operation 1103 includes supplying chlorine (Cl2) to the plasma processing region 109 at a flow rate in a range extending from about 20 sccm to about 300 sccm. In some embodiments, generating the plasma in operation 1103 includes supplying boron trichloride (BCl3) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 300 sccm. In some embodiments, generating the plasma in operation 1103 includes supplying argon (Ar) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 300 sccm. In some embodiments, generating the plasma in operation 1103 includes supplying carbon tetrafluoride (CF4) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 200 sccm. In some embodiments, generating the plasma in operation 1103 includes supplying oxygen (O2) to the plasma processing region 109 at a flow rate in a range extending from about 20 sccm to about 300 sccm. In some embodiments, generating the plasma in operation 1103 includes supplying trifluoromethane (CHF3) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 300 sccm. In some embodiments, generating the plasma in operation 1103 includes supplying sulfur hexafluoride (SF6) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 300 sccm.

[0153] Fig.12A flow chart of a method for manufacturing a focus ring structure for use in a plasma processing chamber is shown according to some embodiments. The method includes an operation 1201 for forming a ring structure, such as a ring portion 135-1A of a focus ring structure 135-1, from a ceramic material, wherein the ring structure is configured to circumscribe a substrate support structure, such as substrate support structure 103, located within a plasma processing chamber (e.g., within chamber 102). The ring structure has an inner surface, such as inner surface 135-1A1, which is positioned to be exposed to a plasma processing region when the ring structure is placed in the plasma processing chamber during operation of the plasma processing chamber, in which plasma processing byproduct materials are generated. In some embodiments, the ring structure is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of the plasma chamber. In some embodiments, forming the ring structure in operation 1201 includes forming three structures to extend radially outward from an outer surface of the ring structure, for example, radially extending structures 135B1, 135B2, 135B3, wherein the three structures are configured to engage with corresponding three lifting components to enable the ring structure to be raised and lowered relative to the substrate support structure when the ring structure is placed in a plasma processing chamber. In some embodiments, top surfaces of the three structures extending radially outward from the outer surface of the ring structure are roughened to have a surface roughness average value (Ra) in a range from about 150 micro-inches to about 500 micro-inches.

[0154] The method also includes an operation 1203 for forming a controlled surface morphology change on the inner surface of the ring structure. The controlled surface morphology change promotes the adhesion of plasma treatment byproduct materials and the inner surface of the ring structure. In some embodiments, operation 1203 includes performing media blasting by setting a mask above the inner surface of the ring structure. The mask is configured to expose a portion of the inner surface of the ring structure for removal / corrosion to form a controlled surface morphology change on the inner surface of the ring structure. In some embodiments, the media blasting uses a medium to impact the inner surface of the ring structure, and the medium particularly includes one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramics, glass, walnut shells, pumice, steel sand, steel shot, aluminum shot, zinc shot, copper shot, shredded wire, garnet, silica sand and staurolite. In some embodiments, operation 1203 includes performing knurling on the inner surface of the ring structure before firing the ceramic material forming the ring structure. In some embodiments, the method can include roughening the inner surface of the ring structure to have a surface roughness average (Ra) in a range extending from about 150 micro-inches to about 500 micro-inches. In some embodiments, the inner surface of the ring structure is roughened by media blasting, which can be the same or different than the media blasting used in operation 1203, to form a controlled surface topography variation on the inner surface of the ring structure. In some embodiments, bare ceramic material forming the ring structure is exposed at the inner surface of the ring structure.

[0155] As previously described, the wall 105 of the chamber 102 includes an opening 106A for transferring the substrate 101 into and out of the chamber 102. In some embodiments, the opening 106A is covered by an access control device, such as a slit valve or a gate valve or the like, which provides access for a robotic substrate handling device to enter the chamber 102 through the opening 106A and provides a seal to the opening 106A when the chamber 102 is in operation. Fig.13A According to some embodiments, Figure 1A The system 100 has an access control device 1301 positioned to cover the opening 106A. Fig. 13B A diagram of a chamber 102 interfaced with a substrate handling module 1303 via an access control device 1301 is shown, according to some embodiments. The substrate handling module 1303 may include a robotic substrate handling device 1305 configured to transfer substrates 101 in and out of the chamber 102.

[0156] During plasma processing of the substrate 101 within the chamber 102, plasma processing byproduct materials are free to move within the chamber 102 depending on the process gas flow pattern and / or the existing pressure gradient. During plasma processing operations that produce non-volatile and / or low-volatile byproduct materials, such as, in particular, a PZT etching process or a Pt etching process, the plasma processing byproduct materials may travel into the opening 106A and reach the access control device 1301. These plasma processing byproduct materials may be deposited on the chamber wall 105 within the opening 106A and on the inner surface of the access control device 1301. Then, during subsequent operation of the access control device 1301, some of the deposited plasma processing byproduct materials may move into the access control device 1301 and may even move into the substrate processing module 1303. It should be understood that the movement of plasma processing byproduct materials into and / or through the access control device 1301 spreads contaminants, which is undesirable. Moreover, it should be appreciated that cleaning / removal of plasma processing byproduct materials that have been deposited in opening 106A and moved into access control device 1301 is difficult, time consuming, and expensive because it is often necessary to disassemble chamber 102 and / or access control device 1301 to perform cleaning / removal of plasma processing byproduct materials. Additionally, the proximity of opening 106A of chamber 102 to substrate processing module 1303 increases the potential for cross contamination if any deposited byproducts flake off onto robot substrate handling device 1305 and are transferred and carried to different parts of the manufacturing facility.

[0157] Fig.14 A substrate access port shield 1401 for use in a chamber 102 is shown according to some embodiments. The substrate access port shield 1401 includes a shield segment 1403 configured to be positioned over a portion of an opening 106A in the chamber 102. The substrate access port shield 1401 also includes a first support segment 1405 extending from a first end of the shield segment 1403. The substrate access port shield 1401 also includes a second support segment 1407 extending from a second end of the shield segment 1403. The shield segment 1403 forms an integral shield structure extending along an arc with the first support segment 1405 and the second support segment 1407. In some embodiments, the arc of the substrate access port shield 1401 is conformal to the arc of the bushing structure 139.

[0158] The first support segment 1405 is configured to engage with a vertically movable member within the chamber 102, and the second support segment 1407 is configured to engage with a vertically movable member within the chamber 102, such that the vertically movable member 102 of the vertically movable member causes a corresponding vertical movement of the substrate access port shield 1401. In some embodiments, for example Fig.14As shown, the vertically movable component within the chamber 102 is the focus ring structure 135 / 135-1. In some embodiments, the substrate access port shield 1401 includes a plurality of cutout regions 1409A, 1409B, 1409C corresponding to the radially extending structures 135B1, 135B2, 135B3 of the focus ring structure 135 / 135-1. Fig.15 An isometric view of a substrate access port shield 1401 is shown showing cutout regions 1409A, 1409B, 1409C according to some embodiments. The cutout regions 1409A, 1409B, 1409C are formed so that the substrate access port shield 1401 can be vertically positioned on the radially extending structures 135B1, 135B2, 135B3 of the focus ring structure 135 / 135-1, so that the radially extending structures 135B1, 135B2, 135B3 are inserted into the cutout regions 1409A, 1409B, 1409C, respectively. In some embodiments, the cutout regions 1409A, 1409B, 1409C are also formed so that the substrate access port shield 1401 can be securely held on the focus ring structure 135 / 135-1 by gravity alone (i.e., without other fastening means). However, in other embodiments, one or more fastening devices may be used to secure the substrate access port shield 1401 to the focus ring structure 135 / 135-1. Additionally, in some embodiments, the substrate access port shield 1401 may include one or more additional cutout regions to accommodate viewing of the plasma processing region 109 when the focus ring structure 135 / 135-1 is in the plasma processing position, such as for optical endpoint spectroscopy (OES) purposes or other purposes.

[0159] In embodiments where the substrate access port shield 1401 is positioned on the focus ring structure 135 / 135-1, vertical movement of the focus ring structure 135 / 135-1 through the lifting components 137A, 137B, 137C results in corresponding vertical movement of the substrate access port shield 1401. Additionally, it should be understood that in certain embodiments, the substrate access port shield 1401 may be used within the chamber 102 when the focus ring structure 135 / 135-1 is not present in the chamber 102. In these embodiments, the substrate access port shield 1401 is configured to interface with one or more vertically movable components within the chamber 102 other than the focus ring structure 135 / 135-1. For example, in some embodiments, when the focus ring structure 135 / 135-1 is not present within the chamber 102, the substrate access port shield 1401 is configured to be directly connected to the lifting components 137A, 137B, 137C. In this manner, vertical movement of the lift members 137A, 137B, 137C causes corresponding vertical movement of the substrate access port shield 1401 .

[0160] The shield segment 1403 is configured to at least partially cover the opening 106A of the chamber 102 when the first support segment 1405 and the second support segment 1407 are engaged with the vertical movable member (e.g., with the focus ring structure 135 / 135-1) and when the vertical movable member is in a lowered vertical position. In addition, the shield segment 1403 is configured to not cover the opening 106A of the chamber 102 when the first support segment 1405 and the second support segment 1407 are engaged with the vertical movable member (e.g., with the focus ring structure 135 / 135-1) and when the vertical movable member is in a raised vertical position. In some embodiments, the configuration of the focus ring structure 135 / 135-1 and the vertical travel distance of the focus ring structure 135 / 135-1 may require that the shield segment 1403 of the substrate access port shield 1401 be shortened in the vertical direction so that the opening 106A of the chamber 102 is fully exposed when the focus ring structure 135 / 135-1 is in its fully raised vertical position. For example, Fig.16 A variation of a substrate access port shield 1401A is shown in accordance with some embodiments, wherein shield segment 1403A has a reduced vertical distance 1411 to fully expose the opening 106A of the chamber 102 when the focus ring structure 135 / 135-1 is in its fully raised vertical position.

[0161] Fig.17A A side view of an exemplary substrate access port shield 1401A positioned on a focus ring structure 135 / 135-1 is shown, wherein the focus ring structure 135 / 135-1 is in a fully lowered position, according to some embodiments. Fig.17A In the example of FIG. 1 , when the focus ring structure 135 / 135-1 is in the fully lowered position, the vertical distance 1411 of the shield segment 1403A of the substrate access port shield 1401A covers about 75% of the vertical extent of the opening 106A. In various embodiments, with the substrate access port shield 1401A positioned on the focus ring structure 135 / 135-1 and the focus ring structure 135 / 135-1 in the fully lowered position, the substrate access port shield 1401A is configured to cover at least about 50% of the vertical extent of the opening 106A. In some embodiments, with the substrate access port shield 1401A positioned on the focus ring structure 135 / 135-1 and the focus ring structure 135 / 135-1 in the fully lowered position, the substrate access port shield 1401A is configured to cover at least about two-thirds of the vertical extent of the opening 106A. In some embodiments, with the substrate access port shield 1401A positioned on the focus ring structure 135 / 135-1 and the focus ring structure 135 / 135-1 in a fully lowered position, the substrate access port shield 1401A is configured to cover the entire vertical extent of the opening 106A.

[0162] Fig. 17B A side view of an exemplary substrate access port shield 1401A is shown positioned on a focus ring structure 135 / 135-1, wherein the focus ring structure 135 / 135-1 is in a fully raised position, according to some embodiments. Fig. 17B In the example of FIG. 1 , the vertical distance 1411 of the shield segment 1403A of the substrate access port shield 1401A is defined such that the shield segment 1403A is vertically located above the opening 106A. In some embodiments, the vertical distance 1411 of the shield segment 1403A of the substrate access port shield 1401A can be defined such that the shield segment 1403A still covers a portion of the vertical extent of the opening 106A, as long as the unobstructed vertical extent of the opening 106A is large enough to provide interference-free movement of the substrate 101 and the robot substrate handling device 1305 through the opening 106A.

[0163] In various embodiments, the substrate inlet and outlet port shield 1401 / 1401A is configured as a portion of a perfect circular hollow cylinder. In some embodiments, the radial thickness of the substrate inlet and outlet port shield 1401 / 1401A is substantially uniform. In various embodiments, the radial thickness of the substrate inlet and outlet port shield 1401 / 1401A is in a range extending from about 0.125 inches to about 0.5 inches, or in a range extending from about 0.375 inches to about 0.5 inches, or about 0.217 inches, or about 0.375 inches. In some embodiments, the radial thickness of the substrate inlet and outlet port shield 1401 / 1401A is non-uniform. For example, in some embodiments, the first support segment 1405 and the second support segment 1407 may have a different radial thickness from the shield segment 1403 / 1403A. In addition, since some plasma processing operations are performed at low pressure, the diffusion of plasma processing byproduct materials in the chamber 102 may be significant. Therefore, in some embodiments, it is of interest to position the substrate access port shield 1401 / 1401A as radially close to the liner structure 139 as possible without contacting the liner structure 139, thereby reducing the flow-through area through which byproduct materials can diffuse between the substrate access port shield 1401 / 1401A and the liner structure 139. In some embodiments, by way of example, the radial spacing 1701 between the substrate access port shield 1401 / 1401A and the liner structure 139 is about 0.1 inches.

[0164] In some embodiments, for example Fig.15 and Fig.16As shown, the shield segment 1403 / 1403A of the substrate inlet and outlet port shield 1401 / 1401A is the first part of the perfect circular hollow cylinder, while the first support segment 1405 is the second part of the perfect circular hollow cylinder, and the second support segment 1407 is the third part of the perfect circular hollow cylinder. Moreover, in some embodiments, the shield segment 1403 / 1403A has a first vertical height measured in the axial direction of the perfect circular hollow cylinder, that is, a vertical distance 1411, and the first support segment 1405 has a second vertical height measured in the axial direction of the perfect circular hollow cylinder, and the second support segment 1407 has a third vertical height measured in the axial direction of the perfect circular hollow cylinder. In some embodiments, the first vertical height of the shield segment 1403 / 1403A, the second vertical height of the first support segment 1405, and the third vertical height of the second support segment 1407 are substantially equal. In some embodiments, the first vertical height of the shroud segment 1403 / 1403A is different from each of the second vertical height of the first support segment 1405 and the third vertical height of the second support segment 1407. In some embodiments, the second vertical height of the first support segment 1405 and the third vertical height of the second support segment 1407 are substantially equal. In some embodiments, the first vertical height of the shroud segment 1403 / 1403A is less than each of the second vertical height of the first support segment 1405 and the third vertical height of the second support segment 1407.

[0165] In some embodiments, the substrate access port shield 1401 / 1401A is formed as a monolithic ceramic component. In various embodiments, the substrate access port shield 1401 / 1401A can be formed of aluminum oxide, silicon carbide, or substantially any other ceramic material that is chemically, mechanically, thermally, and electrically compatible for use within the chamber 102. Additionally, in some embodiments, the substrate access port shield 1401 / 1401A can be formed of a non-ceramic material, so long as the material forming the substrate access port shield 1401 / 1401A is chemically, mechanically, thermally, and electrically compatible with the plasma processing operations to be performed with the chamber 102.

[0166] In some embodiments, the surface of the substrate access port shield 1401 / 1401A can be roughened / textured to have a specified surface roughness average (Ra) that promotes adhesion and retention of plasma processing byproduct materials on the substrate access port shield 1401 / 1401A. In some embodiments, at least the inner radial surface of the substrate access port shield 1401 / 1401A has a surface roughness average (Ra) in a range extending from about 150 micro-inches to about 500 micro-inches, wherein the inner radial surface faces the plasma processing region 109. In some embodiments, the entire outer surface of the substrate access port shield 1401 / 1401A has a surface roughness average (Ra) in a range extending from about 150 micro-inches to about 500 micro-inches.

[0167] In some embodiments, the surface of the substrate access port shield 1401 / 1401A is roughened by media blasting. In various embodiments, media blasting can be defined and performed to increase surface roughness, produce a high contact angle on the surface, and increase the total surface area of ​​the surface of the substrate access port shield 1401 / 1401A. In various embodiments, media blasting can be defined and performed to impact the surface of the substrate access port shield 1401 / 1401A with a media, wherein the media particularly includes one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramics, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, shredded wire, garnet, silica sand, and staurolite. It should be understood that in some embodiments, media blasting can provide a specified roughness / texture that is substantially uniformly applied on the surface of the substrate access port shield 1401 / 1401A. Moreover, in some embodiments, media blasting can be performed in conjunction with a patterned mask to produce a specified surface topography on the surface of the substrate access port shield 1401 / 1401A. For example, the patterned mask can include a distribution of opening areas through which the media blasting material can reach the surface of the substrate access port shield 1401 / 1401A. The media blasting material will remove some of the ceramic material in the opening areas of the patterned mask without removing the ceramic material protected by the patterned mask, thereby producing a specified surface topography on the surface of the substrate access port shield 1401 / 1401A. In addition, in addition to or as an alternative to media blasting, the substrate access port shield 1401 / 1401A surface roughness / texture can be imparted by performing a knurling process on the ceramic of the substrate access port shield 1401 / 1401A before firing the ceramic.

[0168] In some embodiments, the ceramic material forming the substrate access port shield 1401 / 1401A is exposed at the inner radial surface of the substrate access port shield 1401 / 1401A. More specifically, in some embodiments, the substrate access port shield 1401 / 1401A formed of a ceramic material is left in an uncoated state for use in the chamber 102. In addition, in some embodiments where the substrate access port shield 1401 / 1401A is formed of a non-ceramic material (e.g., aluminum), the substrate access port shield 1401 / 1401A may be coated with a suitable coating material, such as, in particular, a yttrium oxide coating or an anodized coating.

[0169] The substrate access port shield 1401 / 1401A is a passive component that at least partially blocks / covers the opening 106A of the chamber 102 connected to the access control device 1301. Although the substrate access port shield 1401 / 1401A is a passive component, the substrate access port shield 1401 / 1401A interfaces with active components and thus behaves as if it were an active component. For example, since the substrate access port shield 1401 / 1401A rests on the focus ring structure 135 / 135-1, the substrate access port shield 1401 / 1401A can be vertically moved by means of controlled vertical movement of the focus ring structure 135 / 135-1. It should be understood that the use of the substrate access port shield 1401 / 1401A in the chamber 102 does not require modification of any other components in the chamber 102, nor does it require the installation of additional actuation / movement components in the chamber 102.

[0170] The substrate access port shield 1401 / 1401A can be configured to prevent most non-volatile and / or low volatility plasma processing byproduct materials from entering the opening 106A and being deposited in or near the access control device 1301. The substrate access port shield 1401 / 1401A also provides additional surface area around the inner periphery of the chamber 102 to help capture and retain non-volatile and / or low volatility plasma processing byproduct materials, especially during plasma processing operations that produce large amounts of such byproduct materials (e.g., PZT etch processes and Pt etch processes). The substrate access port shield 1401 / 1401A provides a target surface on which the etching byproducts can be deposited rather than entering the opening 106A and potentially entering the access control device 1301, where cleaning is tedious and the potential for particulate contamination is great. It should be appreciated that the substrate port shield 1401 / 1401A functions to reduce the mean time to clean (MTTC) of the chamber 102 by reducing and / or preventing deposition of etch byproducts within the opening 106A.

[0171] In some embodiments, the substrate access port shield 1401 / 1401A is a consumable item that can be discarded and replaced during regularly scheduled openings of the chamber 102. The substrate access port shield 1401 / 1401A is used to reduce particle generation within the chamber 102 and within the opening 106A during the transfer of substrates 101 into and out of the chamber 102 by capturing non-volatile and / or low-volatile plasma processing byproduct materials. In addition, the substrate access port shield 1401 / 1401A is used to prevent premature damage to the access control device 1301 by reducing and / or preventing non-volatile and / or low-volatile plasma processing byproduct materials from entering the access control device 1301, which may result when the byproduct materials are trapped within the access control device 1301 or within the seals (i.e., O-rings) of the access control device 1301. Thus, the substrate access port shield 1401 / 1401A serves to extend the life of the access control device 1301. Moreover, the substrate access port shield 1401 / 1401A helps prevent leaks in the area of ​​the access control device 1301 that may be caused by deposition and / or entrapment of non-volatile and / or low-volatile plasma processing byproduct materials, thereby providing the chamber 102 with better vacuum integrity. In addition, the substrate access port shield 1401 / 1401A serves to reduce malfunctions of the access control device 1301 during opening and closing operations by helping to keep byproduct materials out of the access control device 1301, and serves to reduce the frequency, duration, and difficulty of physical cleaning of the access control device 1301. In some cases, use of the substrate access port shield 1401 / 1401A can reduce the cleaning time of the access control device 1301 by 50% or more. Because the substrate access port shield 1401 / 1401A is used to reduce access control device 1301 problems caused by plasma processing byproduct material intrusion into the access control device 1301, the substrate access port shield 1401 / 1401A is used to reduce chamber 102 downtime caused by access control device 1301 problems.

[0172] Fig.18A flow chart of a method for plasma processing of a substrate according to some embodiments is shown. The method includes operation 1801, which is used to equip a plasma processing chamber (i.e., chamber 102) that includes a substrate support structure 103, a focus ring structure 135 / 135-1, and a substrate inlet and outlet port shield 1401 / 1401A. The focus ring structure 135 / 135-1 is configured to circumscribe the substrate support structure 103. The focus ring structure 135 / 135-1 includes a ring portion 135A formed as a perfect circular hollow cylinder and three radially extending structures 135B1, 135B2, 135B3 configured to extend radially outward from the outer surface 135A2 of the ring portion 135A. The substrate inlet and outlet port shield 1401 / 1401A includes a shield segment 1403, a first support segment 1405, and a second support segment 1407. The first support segment 1405 extends from the first end of the shield segment 1403. The first support segment 1405 is configured to engage with a first one of the radially extending structures 135B1, 135B2, 135B3 of the focus ring structure 135 / 135-1. The second support segment 1407 extends from the second end of the shield segment 1403. The second support segment 1407 is configured to engage with a second one of the radially extending structures 135B1, 135B2, 135B3 of the focus ring structure 135 / 135-1.

[0173] In some embodiments, the method includes connecting the substrate access port shield 1401 / 1401A to the focus ring structure 135 / 135-1 in a fastener-less manner. In some embodiments, the substrate access port shield 1401 / 1401A is fixed to the focus ring structure 135 / 135-1 by gravity. In some embodiments, connecting the access port shield 1401 / 1401A to the focus ring structure 135 / 135-1 in a fastener-less manner includes: inserting the first radial extension structure 135B1 of the focus ring structure 135 / 135-1 into the cutout 1409A formed in the first support section 1405 of the substrate access port shield 1401 / 1401A. Additionally, fastener-free connection of the access port shield 1401 / 1401A to the focus ring structure 135 / 135-1 includes inserting the second radially extending structure 135B2 of the focus ring structure 135 / 135-1 into a cutout 1409B formed in the second support segment 1407 of the substrate access port shield 1401 / 1401A. Also, fastener-free connection of the access port shield 1401 / 1401A to the focus ring structure 135 / 135-1 includes inserting the third radially extending structure 135B3 of the focus ring structure 135 / 135-1 into a cutout 1409C formed in the second support segment 1407 of the substrate access port shield 1401 / 1401A.

[0174] The method also includes an operation 1803 for positioning the focus ring structure 135 / 135-1 in a lowered vertical position. In some embodiments, positioning the focus ring structure 135 / 135-1 in a lowered vertical position includes operating three lifting members 137A, 137B, 137C that respectively engage three radially extending structures 135B1, 135B2, 135B3 of the focus ring structure 135 / 135-1. The method also includes an operation 1805 for generating a plasma in the plasma processing region 109 above the substrate support structure 103. In some embodiments, the plasma is generated in operation 1805 such that components of the plasma interact with materials on the substrate 101 to generate plasma processing byproduct materials, wherein some of the plasma processing byproduct materials are blocked from entering the opening 106A by the access port shield 1401 / 1401A. In some embodiments, the material on the substrate 101 is a lead zirconate titanate (PZT) film. In some embodiments, the material on the substrate 101 is a platinum (Pt) film. In some embodiments, the material on the substrate 101 is a film that causes a large amount of byproduct deposition within the chamber 102 when exposed to the plasma generated in operation 1805. The method can also include stopping the generation of plasma in the plasma processing region 109 above the substrate support structure 103 and positioning the focus ring structure 135 / 135-1 in an elevated vertical position to vertically lift the substrate access port shield 1401 / 1401A to allow the substrate 101 and the robot substrate handling device 1305 to be transferred through the through opening 106A without obstruction.

[0175] In some embodiments, generating plasma in operation 1805 may include applying RF power to the processing gas in the plasma processing region 109. In some embodiments, the applied RF power may be in a range extending from about 400W to about 1250W. However, it should be understood that in various embodiments, the applied RF power may be less than 400W or greater than 1250W. In some embodiments, the RF power is applied by a RF signal having a frequency of about 13.56MHz. However, it should be understood that in various embodiments, the RF power may be applied by a RF signal having a frequency other than 13.56MHz. Moreover, in some embodiments, the method may include an operation for generating a bias voltage at the substrate support structure 103. In some embodiments, the bias voltage is generated in a range from about 100V to about 600V. It should be understood that in various embodiments, the bias voltage may be less than 100V or greater than 600V. Moreover, in some embodiments, the bias voltage may be generated by a RF signal having a frequency of about 13.56MHz. However, it should be understood that in various embodiments, the bias voltage may be generated by a radio frequency signal having a frequency other than 13.56 MHz. Also, in various embodiments, the bias voltage may be generated by a DC power supply.

[0176] Additionally, in some embodiments, the method may include an operation for maintaining a temperature of the substrate support structure 103 within a range from about 40° C. to about 100° C. However, it should be understood that in various embodiments, the temperature of the substrate support structure 103 may be maintained at less than 40° C. or greater than 100° C. Also, in some embodiments, the method may include an operation for maintaining a pressure within the plasma processing region 109 within a range from about 5 mTorr to about 50 mTorr. However, it should be understood that in various embodiments, the pressure within the plasma processing region 109 may be maintained at less than 5 mTorr or greater than 50 mTorr.

[0177] In some embodiments, generating the plasma in operation 1805 includes supplying a process gas to the plasma processing region 109, wherein the process gas is one or more of chlorine (Cl2), boron trichloride (BCl3), argon (Ar), carbon tetrafluoride (CF4), oxygen (O2), trifluoromethane (CHF3), and sulfur hexafluoride (SF6). In some embodiments, generating the plasma in operation 1805 includes supplying chlorine (Cl2) to the plasma processing region 109 at a flow rate in a range extending from about 20 sccm to about 300 sccm. In some embodiments, generating the plasma in operation 1805 includes supplying boron trichloride (BCl3) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 300 sccm. In some embodiments, generating the plasma in operation 1805 includes supplying argon (Ar) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 300 sccm. In some embodiments, generating the plasma in operation 1805 includes supplying carbon tetrafluoride (CF4) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 200 sccm. In some embodiments, generating the plasma in operation 1805 includes supplying oxygen (O2) to the plasma processing region 109 at a flow rate in a range extending from about 20 sccm to about 300 sccm. In some embodiments, generating the plasma in operation 1805 includes supplying trifluoromethane (CHF3) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 300 sccm. In some embodiments, generating the plasma in operation 1805 includes supplying sulfur hexafluoride (SF6) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 300 sccm.

[0178] Fig.19A flow chart of a method for manufacturing a substrate access port shield 1401 / 1401A for use in a plasma processing chamber according to some embodiments is shown. The method includes an operation 1901 for forming a substrate access port shield 1401 / 1401A to include a shield segment 1403, a first support segment 1405 extending from a first end of the shield segment 1403, and a second support segment 1407 extending from a second end segment of the shield segment 1403. The first support segment 1405 is configured to engage with a vertically movable component (e.g., with a focus ring structure 135 / 135-1) within a plasma processing chamber (e.g., within chamber 102). The second support segment 1407 is configured to engage with a vertically movable component within chamber 102. When the first support segment 1405 and the second support segment 1407 are engaged with the vertical movable member and when the vertical movable member is in a lowered vertical position, the substrate inlet and outlet port shield 1401 / 1401A is formed to extend along an arc and at least partially cover an opening 106A serving as a substrate inlet and outlet port in the wall 105 of the chamber 102. The substrate inlet and outlet port shield 1401 / 1401A is configured to expose the opening 106A when the first support segment 1405 and the second support segment 1407 are engaged with the vertical movable member and when the vertical movable member is in a raised vertical position.

[0179] In some embodiments, forming the substrate access port shield 1401 / 1401A includes: forming a cutout 1409A in the first support segment 1405 to accommodate a first portion of the vertically movable member, for example, to accommodate the radially extending structure 135B1. In addition, forming the substrate access port shield 1401 / 1401A may include: forming a cutout 1409B in the second support segment 1407 to accommodate a second portion of the vertically movable member, for example, to accommodate the radially extending structure 135B2. Moreover, forming the substrate access port shield 1401 / 1401A may include: forming a cutout 1409C in the second support segment 1407 to accommodate a third portion of the vertically movable member, for example, to accommodate the radially extending structure 135B3.

[0180] In some embodiments, operation 1901 includes forming the substrate access port shield 1401 / 1401A from aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of the plasma chamber. In some embodiments, operation 1901 includes roughening the outer surface of the substrate access port shield 1401 / 1401A to have a surface roughness average (Ra) in a range extending from about 150 micro-inches to about 500 micro-inches. In some embodiments, the outer surface of the substrate access port shield 1401 / 1401A is roughened by media blasting, which strikes the outer surface of the substrate access port shield 1401 / 1401A with a media, wherein the media includes one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramics, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, shredded wire, garnet, silica sand, and staurolite. In some embodiments, operation 1901 includes performing a knurling process on the outer surface of the substrate access port shield 1401 / 1401A before firing the ceramic material forming the substrate access port shield 1401 / 1401A. In some embodiments, the bare ceramic material formed with the substrate access port shield 1401 / 1401A is exposed at the outer surface of the substrate access port shield 1401 / 1401A.

[0181] As about Figure 1A and 1B As discussed, the wall 105 of the chamber 102 may include openings for various purposes. For example, Fig. 20 A chamber 102 is shown having an opening 106A for transferring a substrate 101 into and out of the chamber 102, according to some embodiments. Fig. 20 A chamber 102 is shown with an opening 106B according to some embodiments, which provides a viewport for observing a plasma processing region 109 within the chamber 102 manually or through various devices. It should be understood that openings 106A and 106B are provided as examples. In various embodiments, the chamber 102 may include only opening 106A, or the chamber 102 may include more openings than openings 106A and 106B. Each opening, such as 106A, 106B, through the wall 105 of the chamber 102 forms a three-dimensional cavity or channel having a geometric configuration (depth and cross-sectional shape) defined by the geometry of the wall 105 at the location of the opening.

[0182] During plasma processing of the substrate 101 within the chamber 102, plasma processing byproduct materials are free to move within the chamber 102 depending on the process gas flow pattern and / or the existing pressure gradient. During plasma processing operations that generate non-volatile and / or low-volatile byproduct materials, such as, for example, a PZT etch process or a Pt etch process, the plasma processing byproduct materials may travel into openings formed through the walls 105 of the chamber 102, such as the openings 106A and 106B, and deposit on the surfaces of the walls 105 within the openings. In low vacuum pressure plasma processes that form non-volatile and / or low-volatile plasma processing byproduct materials, such as, for example, in PZT etch processes and Pt etch processes, a large amount of byproduct deposition may accumulate within the openings (e.g., the openings 106A, 106B) formed through the walls 105 of the chamber 102. Cleaning / removal of the plasma processing byproduct materials deposited in the openings may be difficult, time-consuming, and expensive, at least in part due to the tight configuration of the openings. Furthermore, physical / mechanical techniques are often required to clean / remove the plasma processing byproduct materials deposited in the openings, which increases the difficulty, time, and expense of the cleaning process. The time required to clean the plasma processing byproduct materials from within the openings of the wall 105 is added to the overall chamber cleaning time, thereby increasing the mean time to clean (MTTC) of the chamber 102 and reducing the availability of the chamber 102 for semiconductor manufacturing operations.

[0183] Various embodiments are disclosed herein for insert bushings that can be inserted into openings formed through the wall 105 of the chamber 102, such as the openings 106A, 106B, to provide protection for the wall 105 surfaces within the openings and to provide sacrificial surfaces on which plasma processing byproduct materials can be deposited instead of on the wall 105 surfaces within the openings. For example, Fig.21 An insertion bushing 2101 configured for insertion into opening 106A and an insertion bushing 2103 configured for insertion into opening 106B are shown according to some embodiments. Fig. 22 An isometric view of an insertion sleeve 2101 is shown according to some embodiments. Fig.23 An isometric view of an insertion sleeve 2103 is shown according to some embodiments.

[0184] In some embodiments, the insert bushings 2101, 2103 can be made of sheet metal, such as hard anodized aluminum sheet metal, such as 5056 sheet metal aluminum. The sheet metal can be cut and bent into a conformal configuration with the openings 106A, 106B through the wall 105 of the chamber 102, in which the insert bushings are to be placed. In some embodiments, the insert bushings 2101, 2103 are formed of sheet metal having a thickness ranging from about 0.030 inches to about 0.090 inches. In some embodiments, the insert bushings 2101, 2103 can be formed of sheet metal (e.g., hard anodized aluminum sheet) that is cut and welded into a conformal configuration with the openings 106A, 106B through the wall 105 of the chamber 102, in which the insert bushings are to be placed. It should be understood that the insert bushings 2101, 2103 are formed to substantially cover the surface of the wall 105 within the openings 106A, 106B.

[0185] In some embodiments, for example Fig. 22 and 23 As shown, the insert bushings 2101, 2103 may be formed to have a continuous structure, i.e., a closed shape, which circumscribes the vertical cross-section of the openings 106A, 106B when inserted into the openings 106A, 106B. However, in some embodiments, the insert bushings 2101, 2103 may be formed to have a discontinuous structure. For example, Fig.24 An insert bushing 2101A is shown as a variation of the insert bushing 2101 according to some embodiments, wherein the insert bushing 2101A is cut through on a vertical side of the insert bushing 2101A to form a gap 2401. The gap 2401 separates a first edge of the insert bushing 2101A from a second edge of the insert bushing 2101A, such that the gap 2401 forms a discontinuity in the outer surface profile of the insert bushing 2101A. The gap 2401 provides mechanical flexibility to the insert bushing 2101A to compress the outer surface profile of the insert bushing 2101A to enable the insert bushing 2101A to be inserted into the opening 106A.

[0186] In some embodiments, the insert bushing 2101A has a spring property that enables the insert bushing 2101A to be pushed outward against the surface of the wall 105 when the insert bushing 2101A is inserted into the opening 106A. For example, when the insert bushing 2101A is made of a metal plate, the metal plate can bend so that when the insert bushing 2101A is inserted into the opening 106A, the insert bushing 2101A will apply a spring force to the surface of the wall 105. In these embodiments, the gap 2401 enables the insert bushing 2101A to be compressed to facilitate the insertion and removal of the insert bushing 2101A from the opening 106A. In some embodiments, the insert bushing 2101A with the gap 2401 can be compressed by hand. Furthermore, in some embodiments, one or more outer surfaces of the insert bushing 2101A may have a convex shape that enhances the elastic force exerted on the surface of the wall 105 when the insert bushing 2101A is inserted into the opening 106A. Fig.25 A front view of an insert bushing 2101B is shown according to some embodiments, which is a variation of the insert bushing 2101A, and includes a convex area 2501 formed above the upper surface of the insert bushing 2101B. The exemplary insert bushing 2101B also includes a gap 2401. It should be understood that in some embodiments, the insert bushing 2103 can be configured to include a gap like the gap 2401 and / or include a convex area like the convex area 2501. In some embodiments, the insert bushings 2101, 2101A, 2101B, 2103 are configured to have a mechanical flexibility sufficient to compress the outer surface profile of the insert bushing so that the insert bushing can be inserted into the openings 106A, 106B.

[0187] Insert bushings such as 2101, 2101A, 2101B, 2103 are configured so that when installed in openings 106A, 106B, a desired gap is maintained through openings 106A, 106B. It should be understood that insert bushings such as 2101, 2101A, 2101B, 2103 can be installed in openings 106A, 106B without the use of hardware fasteners, adhesives or other locking / fastening devices because the insert bushing is a non-moving part and the spring force exerted by the insert bushing on the wall 105 of the chamber 102 is sufficient to retain the insert bushing in the openings 106A, 106B during operation of the chamber 102.

[0188] Furthermore, in some plasma processing operations, an existing opening, such as 106B, formed through the wall 105 of the chamber 102 may not be needed. For such situations, the insert bushing may be configured to completely block the opening when the insert bushing is inserted into the opening. For example, Fig.26An insert bushing 2601 is shown according to some embodiments, which is configured to be inserted into the opening 106B and includes a vertical surface 2603 that blocks the opening 106B at the inner surface of the wall 105 of the chamber 102. In some embodiments, the insert bushing 2601 is formed of a metal sheet, as previously discussed with respect to the insert bushings 2101, 2103. Moreover, in some embodiments, the insert bushing 2601 can be formed to include a gap 2605 cut through the vertical side, similar to the gap 2401, to enable compression of the insert bushing 2601 to facilitate insertion of the insert bushing 2601 into the opening 106B and removal of the insert bushing 2601 from the opening 106B. Moreover, in some embodiments, the insert bushing 2601 can be formed to include one or more convex areas, such as the convex area 2501, to provide / enhance the elastic force applied by the insert bushing 2601 on the surface of the wall 105 within the opening 106B.

[0189] also, Fig. 27 An insert bushing 2701 including a vertical surface 2703 is shown according to some embodiments, which substantially covers the surface of the window 108 exposed by the opening 106B. The insert bushing 2701 can be used when the opening 106B is not required. In some embodiments, the insert bushing 2701 is formed of a metal sheet, as previously discussed with respect to the insert bushings 2101, 2103. Moreover, in some embodiments, the insert bushing 2701 can be formed to include a gap 2705 cut through the vertical side, similar to the gap 2401, so that the insert bushing 2701 can be compressed to facilitate the insertion of the insert bushing 2701 into the opening 106B and the removal of the insert bushing 2701 from the opening 106B. Moreover, in some embodiments, the insert bushing 2701 can be formed to include one or more convex areas, such as convex areas 2501, to provide / enhance the elastic force applied by the insert bushing 2701 on the surface of the wall 105 within the opening 106B.

[0190] in addition, Fig.28An insert bushing 2801 according to some embodiments is shown, the insert bushing 2801 including a first vertical surface 2803 that substantially covers the surface of the window 108, the surface of the window 108 being exposed through the opening 106B; and the insert bushing 2801 including a second vertical surface 2805 that blocks the opening 106B at the inner surface of the chamber 102 wall 105. The insert bushing 2801 can be used when the opening 106B is not required. In some embodiments, the insert bushing 2801 is formed of a metal sheet, as previously discussed with respect to the insert bushings 2101, 2103. Moreover, in some embodiments, the insert bushing 2801 can be formed to include a gap 2807 cut through the vertical side, similar to the gap 2801, to enable compression of the insert bushing 2801 to facilitate insertion of the insert bushing 2801 into the opening 106B and removal of the insert bushing 2801 from the opening 106B. Moreover, in some embodiments, the insert bushing 2801 can be formed to include one or more convex regions, such as the convex region 2501, to provide / enhance the spring force exerted by the insert bushing 2801 on the surface of the wall 105 within the opening 106B.

[0191] In some embodiments, the insert for opening 106A may be configured as a solid plug. Fig.29 Plug 2901 is shown configured to fit snugly within opening 106B and provide a continuation of the contour of the inner surface of wall 105 of chamber 102, according to some embodiments. Plug 2901 can be used when opening 106B is not required. In some embodiments, plug 2901 is machined from a block of aluminum or from a block of other suitable material that is chemically, mechanically, thermally, and electrically compatible for use within chamber 102.

[0192] In some embodiments, the insert bushing 2101, 2101A, 2101B, 2103, 2601, 2701, 2801 and / or the insert plug 2901 can be configured as a disposable component that can be removed and discarded during cleaning of the chamber 102. For example, when the insert bushing 2101, 2101A, 2101B, 2103, 2601, 2701, 2801 is made of a low-cost material (e.g., hard anodized aluminum plate), the insert bushing 2101, 2101A, 2101B, 2103, 2601, 2701, 2801 can be considered a consumable item. However, in some embodiments, the insert bushing 2101, 2101A, 2101B, 2103, 2601, 2701, 2801 and / or the plug 2901 can be cleaned and refurbished for reuse within the chamber 102.

[0193] Each of the insert bushings 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and the plug 2901 has a process exposed surface that is exposed to the interior area of ​​the chamber 102 when the insert bushing is inserted into the opening 106A, 106B. The process exposed surface can be adjusted to promote adhesion of plasma treatment byproduct materials to the process exposed surface. In some embodiments, the insert bushings 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or the plug 2901 can be formed to have a specified surface roughness average (Ra) that promotes adhesion and retention of plasma treatment byproduct materials. In some embodiments, the surface of the insert bushing 2101, 2101A, 2101B, 2103, 2601, 2701, 2801 and / or the plug 2901 has a surface roughness average (Ra) in a range extending from about 150 micro-inches to about 500 micro-inches. Moreover, in some embodiments, the insert bushing 2101, 2101A, 2101B, 2103, 2601, 2701, 2801 and / or the plug 2901 can be formed with a surface coating, such as, for example, an yttria coating or an anodized coating.

[0194] It should be appreciated that the use of insert bushings 2101, 2101A, 2101B, 2103, 2601, 2701, 2801 and / or plug 2901 in a plasma etching chamber is particularly beneficial because a large amount of non-volatile and / or low-volatile byproduct materials are generated during etching processes, especially during PZT etching and Pt etching processes. The insert bushings 2101, 2101A, 2101B, 2103, 2601, 2701, 2801 and plug 2901 provide a low-cost and easy-to-maintain solution for managing the deposition of plasma processing byproduct materials in openings (e.g., 106A, 106B) formed through the wall 105 of the chamber 102. It should be appreciated that by using the insert bushings 2101, 2101A, 2101B, 2103, 2601, 2701, 2801 and / or the plug 2901, a technician no longer needs to spend a significant amount of time cleaning the hard-to-reach surfaces of the wall 105 within the openings 106A, 106B during cleaning of the chamber 102. Instead, a technician only needs to remove and replace the insert bushings 2101, 2101A, 2101B, 2103, 2601, 2701, 2801 and / or the plug 2901. Thus, the insert bushings 2101, 2101A, 2101B, 2103, 2601, 2701, 2801 and / or the plug 2901 reduce operating costs and increase manufacturing yields of the substrate 101 by reducing the mean time to clean (MTTC) of the chamber 102. In some embodiments, the time required to clean the surface of the wall 105 within the openings 106A, 106B is reduced by 50% or more. Moreover, the use of the insert bushings 2101, 2101A, 2101B, 2103, 2601, 2701, 2801 and / or the plug 2901 helps reduce particle generation within the chamber 102 because particles are not retained and captured within the openings 106A, 106B to avoid possible displacement during subsequent operation of the chamber 102. In addition, the use of the insert bushings 2101, 2101A, 2101B helps prevent leakage through the access control device 1301 and maintains vacuum integrity within the chamber 102 by helping to capture byproduct materials deposited within the openings 106A.

[0195] Fig.30A flow chart of a method for plasma treatment of a substrate according to some embodiments is shown. The method includes operation 3001, which is used to equip a plasma processing chamber (i.e., chamber 102) including a plasma processing region 109, in which plasma is generated during operation of the chamber 102. The chamber 102 includes a wall 105, which forms a portion of a housing surrounding the plasma processing region 109. The wall 105 includes a port formed through the wall 105, such as openings 106A, 106B. In some embodiments, the port is a substrate access port, through which the substrate 101 is inserted into and removed from the chamber 102. In some embodiments, the port is a viewport, which is configured to provide an observation of the plasma processing region 109.

[0196] The method includes an operation 3003 for placing an insert bushing (e.g., insert bushing 2101, 2101A, 2101B, 2103, 2601, 2701, 2801) within a port. The insert bushing is configured to cover an inner surface of the port. When the insert bushing is located within the port, the insert bushing is formed to substantially cover the inner surface of the port. In some embodiments, the insert bushing includes a surface exposed to treatment, and when the insert bushing is located in the port, the surface exposed to treatment is fluidly exposed to the plasma processing region 109, wherein the surface exposed to treatment is adjusted to promote adhesion of plasma treatment byproduct material to the surface exposed to treatment. In some embodiments, the insert bushing is configured to wrap around an open volume within the port and provide a field of view through the open volume within the port when the insert bushing is located within the port. In some embodiments, the insertion sleeve is configured to wrap around the open volume within the port and, when the insertion sleeve is positioned within the port, cover an outer boundary of the open volume within the port that is proximate to an outer surface of the wall 105 of the chamber 102. In some embodiments, the insertion sleeve is configured to wrap around the open volume within the port and, when the insertion sleeve is positioned within the port, cover an inner boundary of the open volume within the port that is proximate to an inner surface of the wall 105 of the chamber 102. In some embodiments, the insertion sleeve is configured to cover a portion of the inner surface of the wall 105 of the chamber 102 that is around the port when the insertion sleeve is positioned within the port. In some embodiments, operation 3003 includes positioning a plug (e.g., plug 2901) within the port.

[0197] The insert bushing is configured to apply an elastic force to the inner surface of the port to keep the insert bushing in the proper position in the port. In some embodiments, the elastic force applied by the insert bushing on the inner surface of the port is sufficient to physically fix the insert bushing in the port without the use of an additional fixing mechanism. In some embodiments, operation 3003 includes applying a compressive force to the outer surface profile of the insert bushing so that the insert bushing can be inserted into the port, and includes releasing the compressive force of the outer surface profile of the insert bushing so that the insert bushing can impart the elastic force acting on the inner surface of the port. In some embodiments, the insert bushing includes a first edge, which is separated from the second edge by a gap, and the gap forms a discontinuity in the outer surface profile of the insert bushing. In these embodiments, operation 3003 can include applying a compressive force to the outer surface profile of the insert bushing to close the gap so that the insert bushing can be inserted into the port.

[0198] The method also includes an operation 3005 for generating a plasma in the plasma processing region 109 when exposed to the substrate 1001 so that components of the plasma interact with materials on the substrate 101 to produce plasma processing byproduct materials. In some embodiments, the material on the substrate 101 is a lead zirconate titanate (PZT) film. In some embodiments, the material on the substrate 101 is a platinum (Pt) film. In some embodiments, the material on the substrate 101 is a film that causes a large amount of byproduct deposition in the chamber 102 when exposed to the plasma generated in operation 3005. The insert bushing prevents the plasma processing byproduct materials from contacting the inner surface of the port. In addition, in some embodiments, some of the plasma processing byproduct materials adhere to the insert bushing.

[0199] In some embodiments, generating plasma in operation 3005 may include applying RF power to the processing gas in the plasma processing region 109. In some embodiments, the applied RF power may be in a range extending from about 400W to about 1250W. However, it should be understood that in various embodiments, the applied RF power may be less than 400W or greater than 1250W. In some embodiments, the RF power is applied by a RF signal having a frequency of about 13.56MHz. However, it should be understood that in various embodiments, the RF power may be applied by a RF signal having a frequency other than 13.56MHz. Moreover, in some embodiments, the method may include an operation for generating a bias voltage at the substrate support structure 103. In some embodiments, the bias voltage is generated in a range from about 100V to about 600V. It should be understood that in various embodiments, the bias voltage may be less than 100V or greater than 600V. Moreover, in some embodiments, the bias voltage may be generated by a RF signal having a frequency of about 13.56MHz. However, it should be understood that in various embodiments, the bias voltage may be generated by a radio frequency signal having a frequency other than 13.56 MHz. Also, in various embodiments, the bias voltage may be generated by a DC power supply.

[0200] Additionally, in some embodiments, the method may include an operation for maintaining a temperature of the substrate support structure 103 within a range from about 40° C. to about 100° C. However, it should be understood that in various embodiments, the temperature of the substrate support structure 103 may be maintained at less than 40° C. or greater than 100° C. Also, in some embodiments, the method may include an operation for maintaining a pressure within the plasma processing region 109 within a range from about 5 mTorr to about 50 mTorr. However, it should be understood that in various embodiments, the pressure within the plasma processing region 109 may be maintained at less than 5 mTorr or greater than 50 mTorr.

[0201] In some embodiments, generating the plasma in operation 3005 includes supplying a process gas to the plasma processing region 109, wherein the process gas is one or more of chlorine (Cl2), boron trichloride (BCl3), argon (Ar), carbon tetrafluoride (CF4), oxygen (O2), trifluoromethane (CHF3), and sulfur hexafluoride (SF6). In some embodiments, generating the plasma in operation 3005 includes supplying chlorine (Cl2) to the plasma processing region 109 at a flow rate in a range extending from about 20 sccm to about 300 sccm. In some embodiments, generating the plasma in operation 3005 includes supplying boron trichloride (BCl3) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 300 sccm. In some embodiments, generating the plasma in operation 3005 includes supplying argon (Ar) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 300 sccm. In some embodiments, generating a plasma in operation 3005 includes supplying carbon tetrafluoride (CF4) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 200 sccm. In some embodiments, generating a plasma in operation 3005 includes supplying oxygen (O2) to the plasma processing region 109 at a flow rate in a range extending from about 20 sccm to about 300 sccm. In some embodiments, generating a plasma in operation 3005 includes supplying trifluoromethane (CHF3) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 300 sccm. In some embodiments, generating a plasma in operation 3005 includes supplying sulfur hexafluoride (SF6) to the plasma processing region 109 at a flow rate in a range extending from about 50 sccm to about 300 sccm.

[0202] Fig.31 A flow chart of a method of manufacturing an insert bushing for a plasma processing chamber (e.g., chamber 102) according to some embodiments is shown, for example, insert bushings 2101, 2101A, 2101B, 2103, 2601, 2701, 2801. The method includes an operation 3101 for forming an insert bushing to cover an inner surface of a port (e.g., openings 106A, 106B) formed through a wall 105 of the chamber 102. The insert bushing is configured to have a mechanical flexibility sufficient to compress an outer surface profile of the insert bushing to enable the insert bushing to be inserted into the port. The insert bushing is configured to apply a spring force to an inner surface of the port when the compressive force of the outer surface profile of the insert bushing is released.

[0203] Reference again Figure 1BDuring operation of the chamber 102, the pump 123 draws process gas from the plasma processing region 109 through the exhaust passage 121 and the conduit / pipe 122 to the pump 123. Non-volatile and / or low-volatility plasma processing byproducts may be entrained in the process gas flow flowing through the exhaust passage 121 and the conduit / pipe 122 to the pump 123. As the system 100 operates, plasma processing byproduct materials may be deposited in the exhaust passage 121 and the conduit / pipe 122 and the pump 123. In some embodiments, the pump 123 is a turbomolecular pump and does not include a rotor with turbine blades. Over time, the plasma processing byproduct materials may clog the turbine blades of the pump 123, which may result in increased operating temperature of the pump 123, increased power consumption, friction, wear, premature failure, and failure of the entire pump 123 due to motion-stuck rotors. Therefore, it is of interest to reduce the amount of non-volatile and / or low volatility plasma process byproducts that reach the pump 123, especially in plasma processes that produce large amounts of such byproduct materials, such as in PZT etch processes and Pt etch processes.

[0204] Fig.32 An exemplary exhaust baffle assembly 3200 is shown positioned within the exhaust passage 121 of the exhaust assembly 119 according to some exemplary embodiments. Fig.32 , the exhaust assembly 119 is shown in transparent form to enable the exhaust baffle assembly 3200 to be displayed. Fig.33 An exhaust baffle assembly 3200 is shown located within exhaust passage 121 near chamber 102 according to some embodiments. Fig.33 A cross-sectional view of the exhaust assembly 119 is shown in FIG. 1 to enable the exhaust baffle assembly 3200 to be displayed. Fig.34 A vertical cross-sectional view through chamber 102, exhaust assembly 119, and exhaust baffle assembly 3200 is shown, wherein exhaust baffle assembly 3200 is positioned at the exhaust outlet of chamber 102, according to some embodiments.

[0205] Generally speaking, the exhaust baffle assembly 3200 is used to extend the useful life of the pump 123 by mitigating the risks associated with downstream deposition of non-volatile and / or low-volatile plasma processing byproduct materials. It should be appreciated that by installing the exhaust baffle assembly 3200 within the exhaust passage 121 between the chamber 102 and the pump 123, a cumbersome exhaust flow path is created, wherein the exhaust baffle assembly 3200 is used to contact and capture non-volatile and / or low-volatile plasma processing byproduct materials entrained in the exhaust gas flow. In addition, the surface texture and geometry of the exhaust baffle assembly 3200 can be configured to promote the adhesion and retention of non-volatile and / or low-volatile plasma processing byproduct materials to the exhaust baffle assembly 3200 until a cleaning process of the chamber 102 is performed. Also, during cleaning of the chamber 102, the exhaust baffle assembly 3200 can be removed for cleaning, and a new / cleaned exhaust baffle assembly 3200 can be installed.

[0206] Fig.35 An isometric view of an exemplary exhaust baffle assembly 3200 is shown, according to some embodiments. The exhaust baffle assembly 3200 includes a top rod 3501, a bottom rod 3503, a first vertical support segment 3505A, a second vertical support segment 3505B, and five baffle members 3507A-3507E. Fig.36 A front view of a discharge baffle assembly 3200 is shown, according to some embodiments. Fig.37 A side view of an exhaust baffle assembly 3200 is shown according to some embodiments. In some embodiments, the exhaust baffle assembly 3200 is configured such that the baffle members 3507A-3507E are inserted into slots / cutouts formed in the first vertical support segment 3505A and the second vertical support segment 3505B, each of which is secured to the top rod 3501 and the bottom rod 3503. In various embodiments, each of the first vertical support segment 3505A and the second vertical support segment 3505B can be secured to both the top rod 3501 and the bottom rod 3503 by welding or by fasteners (e.g., machine screws), or a combination of both. Fig.36 and 37 It should be understood that substantially all exhaust gas flow from the plasma processing region 109 will be redirected by the combination of baffle members 3507A-3507E. Thus, in some embodiments, the combination of baffle members 3507A-3507E is configured to extend across substantially all flow paths that pass through the exhaust channel 121 transverse to the main exhaust gas flow direction 3701.

[0207] It should be understood that in various embodiments, the exhaust baffle assembly 3200 can be configured to include one or more baffle members, such as 3507A-3507E. In various embodiments, the exhaust baffle assembly 3200 can have less than five or more than five baffle members, such as 3507A-3507E. The baffle members 3507A-3507E are configured to redirect the exhaust gas flow so that plasma processing byproduct materials within the exhaust gas flow will impact the baffle members 3507A-3507E. In some embodiments, the baffle members 3507A-3507E are positioned at an angle of about 45 degrees relative to the main exhaust gas flow direction 3701, such as Fig.37 As shown. However, it should be understood that in various embodiments, the baffle members 3507A-3507E can be positioned at an angle other than 45 degrees relative to the main exhaust flow direction 3701. In some embodiments, the baffle members 3507A-3507E can be positioned at an angle from about 25 degrees to about 75 degrees relative to the main exhaust flow direction 3701. In addition, in some embodiments, each baffle member 3507A-3507E is positioned at substantially the same angle relative to the main exhaust flow direction 3701. However, in some embodiments, different baffle members 3507A-3507E can be positioned at different angles relative to the main exhaust flow direction 3701. Moreover, in some embodiments, the angles of the baffle members 3507A-3507E are adjustable.

[0208] In addition, if Fig.37 As shown, in some embodiments, adjacent ones of the baffle members 3507A-3507E can be positioned according to substantially equal vertical spacing distances 3703. However, in some embodiments, the vertical spacing distances 3703 can be different between different adjacent ones of the baffle members 3507A-3507E. Fig.35 As shown, in some embodiments, each baffle member 3507A-3507E has substantially the same shape and size. However, in some embodiments, the shapes and / or sizes of different baffle members 3507A-3507E may be different. It should be understood that the shapes, sizes, and relative positions of the baffle members 3507A-3507E may be defined to optimize the interception of the exhaust gas flow and the byproduct materials entrained therein by the exhaust baffle assembly 3200 while ensuring that a sufficient exhaust gas flow rate is maintained and the pump 123 is not overburdened by the restriction of the exhaust gas flow area caused by the exhaust baffle assembly 3200. In some embodiments, the exhaust baffle assembly 3200 is configured to reduce the amount of normal, open cross-sectional flow area within the exhaust passage 121 in a range extending from about 20% to about 30%.

[0209] In some embodiments, the exhaust baffle assembly 3200 is formed of aluminum or hard anodized aluminum. However, it should be understood that in various embodiments, the exhaust baffle assembly 3200 can be formed of substantially any material that is chemically, mechanically, thermally, and electrically suitable for exposure to the exhaust gas flow within the exhaust passage 121. In addition, in some embodiments, the surface of the exhaust baffle assembly 3200 can be adjusted to promote adhesion of plasma treatment byproduct materials to the exhaust baffle assembly 3200 surface. In some embodiments, the exhaust baffle assembly 3200 can be formed to have a specified surface roughness average (Ra) that promotes adhesion and retention of plasma treatment byproduct materials. In some embodiments, the surface of the exhaust baffle assembly 3200 has a surface roughness average (Ra) in a range extending from about 150 micro-inches to about 500 micro-inches. Moreover, in some embodiments, the exhaust baffle assembly 3200 can be formed to have a surface coating, such as an yttria coating or an anodized coating, etc.

[0210] In some embodiments, the surface of the discharge baffle assembly 3200 is roughened by media blasting. In various embodiments, media blasting can be defined and performed to increase surface roughness, produce a high contact angle on the surface, and increase the total surface area of ​​the discharge baffle assembly 3200. In various embodiments, media blasting can be defined and performed to impact the surface of the discharge baffle assembly 3200 with a media, wherein the media includes one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramic, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, shredded shreds, garnet, silica sand, and staurolite, among others. It should be understood that in some embodiments, media blasting can provide a specified roughness / texture that is substantially uniformly applied on the surface of the discharge baffle assembly 3200.

[0211] In various embodiments, the exhaust baffle assembly 3200 can be configured to be installed in the exhaust passage 121 with or without the use of fastening devices. In some embodiments, the exhaust baffle assembly 3200 is configured to cooperate with one or more corresponding structures in the exhaust passage 121 so that the exhaust baffle assembly 3200 is held in place by one or more corresponding structures in the exhaust passage 121 without the use of fastening devices. For example, in some embodiments, the bottom rod 3503 may include a plurality of protrusions that key into corresponding holes in the bottom of the exhaust passage 121 just downstream of the chamber 102, and / or the top rod 3501 may include a plurality of protrusions that key into corresponding holes in the top of the exhaust passage 121 just downstream of the chamber 102.

[0212] The exhaust baffle assembly 3200 provides physical capture and retention of non-volatile and / or low-volatile plasma processing byproduct materials entrained in the exhaust gas flow from the plasma processing region 109 to the exhaust pump 123. Because the exhaust baffle assembly 3200 reduces the amount of non-volatile and / or low-volatile plasma processing byproducts that travel through the exhaust passage 121 and the conduit / duct 122, the exhaust baffle assembly 3200 serves to reduce the MTTC of the system 100 and thereby reduce the downtime of the chamber 102 and correspondingly increase the manufacturing yield of the substrate 101. In addition, in some embodiments, during cleaning of the chamber 102, the exhaust baffle assembly 3200 can be quickly removed and replaced with a clean exhaust baffle assembly 3200, which helps achieve a lower MTTC for the chamber 102. In some embodiments, the exhaust baffle assembly 3200 can be cleaned and refurbished for reuse, which reduces the operating cost of the system 100.

[0213] Furthermore, because the exhaust baffle assembly 3200 reduces the amount of non-volatile and / or low-volatile plasma processing byproducts that enter the pump 123, the exhaust baffle assembly 3200 serves to extend the useful life of the pump 123 and reduces the likelihood of premature failure of the pump 123 due to intrusion and accumulation of byproduct materials in the pump 123, particularly reducing the likelihood of premature failure of the pump 123 due to accumulation of byproduct materials on blades within the pump 123 and intrusion of byproduct materials into bearing areas within the pump 123. Additionally, it should be appreciated that with less byproduct material accumulating on the blades of the pump 123 due to the exhaust baffle assembly 3200 being used to capture some of the byproducts, a high rotational speed of the pump 123 may be maintained for a longer period of operation, which helps maintain a target exhaust gas flow rate from the plasma processing region 109, thereby reducing process impact / drift due to insufficient and / or changes in the exhaust gas flow rate from the plasma processing region 109. Additionally, the exhaust baffle assembly 3200 serves to extend the mean time to clean (MTBC) of the chamber 102. Because operational problems with pump 123 are often the reason for taking chamber 102 out of service, using discharge baffle assembly 3200 to help protect pump 123 from damage by byproduct materials can significantly increase chamber availability, for example by more than 90%, and reduce the replacement rate of pump 123, thereby reducing the operating cost of system 100.

[0214] In some embodiments, the exhaust baffle assembly, such as 3200, includes at least one baffle member, such as 3507A-3507E, which is configured to be assembled in an exhaust channel (e.g., 121) of a plasma processing chamber (e.g., 102). The shape of the at least one baffle member is set to deflect the processing exhaust gas flow when it is positioned in the exhaust channel. The outer surface of the at least one baffle member is adjusted to promote the adhesion of plasma treatment byproduct materials present in the processing exhaust gas flow to the at least one baffle member. In some embodiments, the at least one baffle member has a substantially flat surface, and when the at least one baffle member is positioned in the exhaust channel, the substantially flat surface is positioned at an angle transverse to the flow direction through the exhaust channel. In some embodiments, the angle of at least one baffle member is about 45 degrees relative to the flow direction. In some embodiments, the angle of the baffle member is adjustable. In some embodiments, at least one baffle member is formed of anodized aluminum. In some embodiments, the surface roughness average value of at least one baffle member is in the range of extending from about 150 micro-inches to about 500 micro-inches.

[0215] In some embodiments, the discharge baffle assembly, such as 3200, includes a frame configured to hold at least one baffle member. In some embodiments, the frame includes a bottom rod, such as 3503, a top rod, such as 3501, a first end rod, such as 3505A, and a second end rod, such as 3505B. The first end rod extends between the top rod and the bottom rod. And, the second end rod extends between the top rod and the bottom rod. At least one baffle member extends from the first end rod to the second end rod. In some embodiments, the frame is formed of anodized aluminum. In some embodiments, the surface roughness average (Ra) of the frame is in the range of extending from about 150 micro-inches to about 500 micro-inches.

[0216] In some embodiments, a plasma processing system, such as system 100, includes a plasma processing chamber, such as chamber 102, which includes a plasma processing region, such as 109, in which plasma is generated during operation of the plasma processing chamber. In addition, the plasma processing system includes an exhaust channel for the plasma processing chamber, such as exhaust channel 121. The exhaust channel is fluidically connected to the plasma processing region. The exhaust channel is configured to guide the flow of the treatment exhaust gas from the plasma processing region. The plasma processing system also includes a pump connected to the exhaust channel, such as pump 123. The pump is configured to apply a negative pressure to the interior of the exhaust channel. The plasma processing system also includes an exhaust baffle assembly, such as exhaust baffle assembly 3200, located in the exhaust channel. The exhaust baffle assembly includes at least one baffle member, such as 3507A-3507E, which is shaped to deflect the treatment exhaust gas flow in the exhaust channel. The outer surface of at least one baffle member is adjusted to promote the adhesion of plasma treatment byproduct materials present in the treatment exhaust gas flow to at least one baffle member. In some embodiments, the exhaust baffle assembly is configured to extend across substantially the entire cross-sectional flow area within the exhaust passage such that a process exhaust gas flow from the plasma processing region is required to flow through the exhaust baffle assembly.

[0217] Fig.38 A flow chart of a method for plasma treatment of a substrate according to some embodiments is shown. The method includes operation 3801, which is used to equip a plasma treatment system (e.g., system 100) including a plasma treatment chamber (e.g., chamber 102) and an exhaust channel (e.g., exhaust channel 121) for the plasma treatment chamber. The plasma treatment chamber includes a plasma treatment region, such as 109, in which plasma is generated during operation of the plasma treatment chamber. The exhaust channel is fluidically connected to the plasma treatment region. The exhaust channel is configured to guide the flow of treatment exhaust gas from the plasma treatment region. The plasma treatment system includes a pump connected to the exhaust channel, such as pump 123. The pump is configured to apply a negative pressure to the interior of the exhaust channel. The plasma treatment system includes an exhaust baffle assembly positioned in the exhaust channel, such as exhaust baffle assembly 3200. The exhaust baffle assembly includes at least one baffle member, the at least one baffle member being shaped to deflect the treatment exhaust gas flow in the exhaust channel. The outer surface of at least one baffle member is adjusted to promote adhesion of plasma treatment byproduct materials present in the treatment exhaust gas flow to at least one baffle member.

[0218] In some embodiments, the exhaust baffle assembly is configured to extend substantially over the entire cross-sectional flow area within the exhaust channel so that the treated exhaust gas flow from the plasma processing area needs to flow through the exhaust baffle assembly. In some embodiments, at least one baffle member has a substantially flat surface that is positioned at an angle transverse to the main exhaust flow direction through the exhaust channel. In some embodiments, the angle of at least one baffle member is about 45 degrees relative to the main exhaust flow direction. In some embodiments, the angle of at least one baffle member is adjustable. In some embodiments, at least one baffle member is formed of anodized aluminum. In some embodiments, the surface roughness average value of at least one baffle member is in the range of extending from about 150 micro-inches to about 500 micro-inches.

[0219] The method also includes an operation 3803 for generating a plasma in the plasma processing region when exposed to the substrate. The method also includes an operation 3805 for operating a pump to apply a negative pressure to the interior of the exhaust channel, thereby drawing a process exhaust gas flow from the plasma processing region into the exhaust channel and through the exhaust baffle assembly within the exhaust channel. Components of the plasma interact with the material on the substrate to generate plasma processing byproduct materials, some of which adhere to at least one baffle member of the exhaust baffle assembly. In some embodiments, the material on the substrate is one or both of a lead zirconate titanate (PZT) film and a platinum (Pt) film.

[0220] Fig.39A flow chart of a method of manufacturing an exhaust baffle assembly (e.g., exhaust baffle assembly 3200) for use in a plasma processing system (e.g., system 100) according to some embodiments is shown. The method includes operation 3901, which is used to form at least one baffle member (e.g., 3507A-3507E) to be assembled in an exhaust channel (e.g., 121) of a plasma processing chamber (e.g., 102). The at least one baffle member is formed to deflect the flow of processed exhaust gas when located in the exhaust channel. The method also includes operation 3903, which is used to adjust the outer surface of the at least one baffle member to promote the adhesion of plasma processing byproduct materials present in the process exhaust gas flow to the at least one baffle member. In some embodiments, the at least one baffle member is formed to have a substantially flat surface, and when the at least one baffle member is located in the exhaust channel, the substantially flat surface is positioned at an angle transverse to the main exhaust flow direction through the exhaust channel. In some embodiments, the at least one baffle member has a substantially flat surface, and the substantially flat surface is positioned at an angle transverse to the main exhaust flow direction through the exhaust channel. In some embodiments, the angle of at least one baffle member is about 45 degrees relative to the main exhaust flow direction. In some embodiments, the angle of at least one baffle member is adjustable. In some embodiments, at least one baffle member is formed of anodized aluminum. In some embodiments, the surface roughness average of at least one baffle member is in a range extending from about 150 micro-inches to about 500 micro-inches.

[0221] In some embodiments, the method includes forming a frame to hold at least one baffle member. The frame includes a bottom rod, such as 3503, a top rod, such as 3501, a first end rod, such as 3505A, and a second end rod, such as 3505B. The first end rod extends between the top rod and the bottom rod. The second end rod extends between the top rod and the bottom rod. At least one baffle member extends from the first end rod to the second end rod. In some embodiments, the frame is formed of anodized aluminum. In some embodiments, the surface roughness average of the frame is in a range from about 150 micro-inches to about 500 micro-inches.

[0222] Although the above invention has been described in detail for the purpose of clear understanding, it is obvious that certain changes and modifications may be made within the scope of the appended claims. Therefore, the embodiments provided should be considered illustrative rather than restrictive, and the present invention is not limited to the details given herein, but can be modified within the scope and equivalents of the described embodiments.

Claims

1. A substrate access port shield for a plasma processing chamber, comprising: Shield segment; a first support segment extending from a first end of the shield segment, the first support segment being configured to engage a vertically movable member within a plasma processing chamber; and A second support segment extends from the second end of the shield segment, the second support segment being configured to engage with the vertically movable component within the plasma processing chamber, the shield segment and the first and second support segments forming an integrated shield structure extending along an arc, wherein vertical movement of the vertically movable component causes corresponding vertical movement of the integrated shield structure, the shield segment being configured to at least partially cover a substrate inlet and outlet port opening of the plasma processing chamber when the first and second support segments engage the vertically movable component and the vertically movable component is in a lowered vertical position, and the shield segment being configured to expose the substrate inlet and outlet port opening of the plasma processing chamber when the first and second support segments engage the vertically movable component and the vertically movable component is in a raised vertical position.

2. The substrate access port shield for use in a plasma processing chamber according to claim 1, wherein: The shield segment is configured as a part of a perfect circular hollow cylinder.

3. The substrate access port shield for use in a plasma processing chamber according to claim 2, wherein: The shield segment has a vertical height measured in the axial direction of the perfect circular hollow cylinder, and the vertical height of the shield segment enables the shield segment to cover at least half of the vertical range of the substrate inlet and outlet port opening of the plasma processing chamber when the first support segment and the second support segment engage the vertical movable component and the vertical movable component is in the lowered vertical position.

4. The substrate access port shield for use in a plasma processing chamber according to claim 2, wherein: The shield segment has a vertical height measured in the axial direction of the perfect circular hollow cylinder, and the vertical height of the shield segment enables the shield segment to cover at least two-thirds of the vertical range of the substrate inlet and outlet port opening of the plasma processing chamber when the first support segment and the second support segment engage the vertical movable component and the vertical movable component is in the lowered vertical position.

5. The substrate access port shield for use in a plasma processing chamber according to claim 2, wherein: The shield segment has a vertical height measured in the axial direction of the perfect circular hollow cylinder, and the vertical height of the shield segment enables the shield segment to completely cover the vertical range of the substrate inlet and outlet port opening of the plasma processing chamber when the first support segment and the second support segment engage the vertical movable component and the vertical movable component is in the lowered vertical position.

6. The substrate access port shield for use in a plasma processing chamber according to claim 1, wherein: The shroud segment is configured as the first part of a perfect circular hollow cylinder, the first support segment is configured as the second part of the perfect circular hollow cylinder, and the second support segment is configured as the third part of the perfect circular hollow cylinder, the shroud segment has a first vertical height measured along the axial direction of the perfect circular hollow cylinder, the first support segment has a second vertical height measured along the axial direction of the perfect circular hollow cylinder, and the second support segment has a third vertical height measured along the axial direction of the perfect circular hollow cylinder.

7. The substrate access port shield for use in a plasma processing chamber according to claim 6, wherein: The first vertical height, the second vertical height, and the third vertical height are substantially equal.

8. The substrate access port shield for use in a plasma processing chamber according to claim 6, wherein: The first vertical height is different from each of the second vertical height and the third vertical height.

9. The substrate access port shield for use in a plasma processing chamber according to claim 8, wherein: The second vertical height and the third vertical height are substantially equal.

10. The substrate access port shield for use in a plasma processing chamber according to claim 6, wherein: The first vertical height is less than each of the second vertical height and the third vertical height.

11. The substrate access port shield for use in a plasma processing chamber according to claim 1, wherein: The integral shield structure is formed of a ceramic material.

12. The substrate access port shield for use in a plasma processing chamber according to claim 11, wherein: The ceramic material is alumina.

13. The substrate access port shield for use in a plasma processing chamber according to claim 11, wherein: At least the inner surface of the integral shroud structure has a surface roughness average value within a range extending from about 150 micro-inches to about 500 micro-inches.

14. The substrate access port shield for use in a plasma processing chamber according to claim 13, wherein: The ceramic material forming the unitary shroud structure is exposed at the inner surface of the unitary shroud structure.

15. The substrate access port shield for use in a plasma processing chamber according to claim 1, wherein: The vertically movable component is a focus ring structure.

16. The substrate access port shield for use in a plasma processing chamber according to claim 15, wherein: The focusing ring structure is configured to be connected to a substrate support structure in the plasma processing chamber, and the focusing ring structure includes a ring portion formed as a perfect circular hollow cylinder and three radially extending structures configured to extend radially outward from the outer surface of the ring portion, the three radially extending structures are spaced apart along the outer periphery of the ring portion, the first support segment is configured to engage with a first one of the three radially extending structures, and the second support segment is configured to engage with a second one of the three radially extending structures.

17. The substrate access port shield for use in a plasma processing chamber according to claim 16, wherein: The three radially extending structures are configured to engage with corresponding three lifting components to enable raising and lowering of the combination of the focus ring structure and the integrated shield structure relative to the substrate support structure.

18. The substrate access port shield for use in a plasma processing chamber according to claim 16, wherein: The first support segment is configured to engage a third of the three radially extending structures.

19. An insert bushing for a port of a plasma processing chamber, comprising: An insert sleeve configured to cover the inner surface of a port formed through a wall of a plasma processing chamber, the insert sleeve configured to have mechanical flexibility sufficient to compress the outer surface profile of the insert sleeve to enable the insert sleeve to be inserted into the port, and the insert sleeve configured to apply a spring force to the inner surface of the port when the compressive force of the outer surface profile of the insert sleeve is released.

20. The insert bushing for a port of a plasma processing chamber of claim 19, wherein: The insert bushing includes a first edge separated from a second edge by a gap that forms a discontinuity in an outer surface profile of the insert bushing.

21. The insert bushing for a port of a plasma processing chamber of claim 19, wherein: The gap provides mechanical flexibility of the insert bushing for compressing the outer surface profile of the insert bushing to enable insertion of the insert bushing into the port.

22. The insert bushing for a port of a plasma processing chamber of claim 19, wherein: The insert bushing is formed from sheet metal.

23. The insert bushing for a port of a plasma processing chamber of claim 19, wherein: The insert bushing is formed from anodized aluminum sheet metal.

24. The insert bushing for a port of a plasma processing chamber of claim 19, wherein: The insert bushing is shaped to substantially cover the inner surface of the port.

25. The insert bushing for a port of a plasma processing chamber of claim 19, wherein: The insert sleeve is configured to wrap around an open volume within the port and provide a view through the open volume within the port.

26. The insert bushing for a port of a plasma processing chamber of claim 19, wherein: The insert bushing is configured to wrap around an open volume within the port and cover an outer side boundary of the open volume within the port proximate an outer surface of the wall of the plasma processing chamber.

27. The insert bushing for a port of a plasma processing chamber of claim 19, wherein: The insert bushing is configured to wrap around an open volume within the port and cover an inner boundary of the open volume within the port proximate an inner surface of the wall of the plasma processing chamber.

28. The insert bushing for a port of a plasma processing chamber of claim 27, wherein: The insert bushing is configured to cover a portion of the inner surface of the wall of the plasma processing chamber around the port.

29. The insert bushing for a port of a plasma processing chamber of claim 19, wherein: The port is a viewport configured to enable observation of an interior region of the plasma processing chamber.

30. The insert bushing for a port of a plasma processing chamber of claim 19, wherein: The spring force exerted by the insert bushing on the inner surface of the port is sufficient to physically secure the insert bushing within the port.

31. The insert bushing for a port of a plasma processing chamber of claim 19, wherein: The insert bushing includes a process exposed surface that is fluidly exposed to an interior region of the plasma processing chamber when the insert bushing is inserted into the port, the process exposed surface being conditioned to promote adhesion of plasma processing byproduct material to the process exposed surface.

32. The insert bushing for a port of a plasma processing chamber of claim 31, wherein: The surface exposed to the treatment has a surface roughness average within a range extending from about 150 microinches to about 500 microinches.

33. An exhaust baffle assembly for a plasma processing chamber, comprising: At least one baffle member is configured to fit within an exhaust passage of a plasma processing chamber, the at least one baffle member being shaped to deflect a process exhaust gas flow when positioned within the exhaust passage, wherein an outer surface of the at least one baffle member is tuned to promote adhesion of plasma processing byproduct material present in the process exhaust gas flow to the at least one baffle member.

34. The discharge baffle assembly of claim 33, wherein: The at least one baffle member has a substantially planar surface that is positioned at an angle transverse to a primary exhaust flow direction through the exhaust passage when the at least one baffle member is positioned within the exhaust passage.

35. The discharge baffle assembly of claim 34, wherein: The angle is about 45 degrees relative to the main exhaust flow direction.

36. The discharge baffle assembly of claim 34, wherein: The angle is adjustable.

37. The discharge baffle assembly of claim 33, wherein: The at least one baffle member is formed from anodized aluminum.

38. The discharge baffle assembly of claim 33, wherein: The at least one baffle member has a surface roughness average within a range extending from about 150 microinches to about 500 microinches.

39. The exhaust baffle assembly of claim 33, further comprising: A frame configured to hold at least one baffle member, the frame comprising a bottom rod, a top rod, a first end rod and a second end rod, the first end rod extending between the top rod and the bottom rod, the second end rod extending between the top rod and the bottom rod, the at least one baffle member extending from the first end rod to the second end rod.

40. The discharge baffle assembly of claim 39, wherein: The frame is made of anodized aluminum.

41. The exhaust baffle assembly of claim 39, wherein: The frame has a surface roughness average within a range extending from about 150 microinches to about 500 microinches.

42. The discharge baffle assembly of claim 39, wherein: The at least one baffle member includes five baffle members, each of the five baffle members extending from the first end rod to the second end rod, each of the five baffle members being configured to deflect the process exhaust gas flow when the exhaust baffle assembly is positioned within the exhaust passage, wherein outer surfaces of the five baffle members are adjusted to promote adhesion of plasma processing byproduct materials present in the process exhaust gas flow to the five baffle members.

43. The discharge baffle assembly of claim 42, wherein: Each of the five baffle members has a substantially flat surface that is oriented approximately 45 degrees relative to a predominant exhaust flow direction through the exhaust passage when the exhaust baffle assembly is positioned within the exhaust channel.

44. The discharge baffle assembly of claim 42, wherein: Each of the five baffle members has a substantially planar surface that is positioned transverse to a primary exhaust flow direction through the exhaust passage when the exhaust baffle assembly is positioned within the exhaust passage.

45. The discharge baffle assembly of claim 44, wherein: The orientation of the substantially planar surface of each of the five baffle members relative to the primary exhaust flow direction through the exhaust passage is adjustable.

46. ​​The discharge baffle assembly of claim 42, wherein: Each of the five baffle members is formed of anodized aluminum.

47. The discharge baffle assembly of claim 42, wherein: Each of the five baffle members has a surface roughness average within a range extending from about 150 microinches to about 500 microinches.

48. A plasma processing chamber comprising: a substrate support structure configured to maintain a substrate exposed to plasma during operation of the plasma processing chamber; and A top window structure is located above the substrate support structure to establish a plasma processing region between the substrate support structure and the top window structure, wherein the top window structure is formed of a ceramic material, and the top window structure has a bottom surface facing the plasma processing region, and the bottom surface has a surface roughness that promotes adhesion of plasma processing byproduct materials to the bottom surface.

49. The plasma processing chamber of claim 48, wherein: The top window structure is formed of alumina.

50. The plasma processing chamber of claim 48, wherein: The bottom surface of the top window structure has a surface roughness average value within a range extending from about 150 microinches to about 500 microinches.

51. The plasma processing chamber of claim 48, wherein: The bare ceramic material formed with the top window structure is exposed at the bottom surface of the top window structure.

52. The plasma processing chamber of claim 48, further comprising: A coil assembly is positioned above the top window structure, the coil assembly being configured to transmit radio frequency power through the top window structure to the plasma processing region.

Images