Silicon wafer measuring method and system and electronic equipment

Abstract

The invention discloses a silicon wafer measurement method and system and electronic equipment, and the method comprises the steps: calling information in a target measurement list when a to-be-measured silicon wafer is measured, so as to measure at least one measurement target belonging to the same type in the target measurement list according to the information in the target measurement list, by setting the information of the measurement targets of the same type in the measurement list and performing measurement according to the measurement list during measurement, simultaneous measurement of the measurement targets of the same type is realized, the measurement configuration data of the measurement targets of the same type are uniformly set, frequent switching of the measurement configuration data is not needed, and the measurement efficiency is improved.

Description

Technical Field

[0001] The present application relates to the semiconductor field, and in particular to a silicon wafer measurement method, system and electronic equipment. Background Art

[0002] Wafer metrology is the process of performing a series of tests and analyses on silicon wafers to ensure that they meet the quality standards and requirements of the semiconductor manufacturing process.

[0003] Silicon wafer measurement usually defines the measurement target points that need to be measured in the measurement field, and performs the measurement test process for each target point separately. The measurement target points on the same silicon wafer are independent of each other, so there will be different measurement rules. During the measurement process, the measurement parameters need to be switched frequently, which will lead to reduced measurement efficiency. Summary of the invention

[0004] In view of this, the present application provides a silicon wafer measurement method, system and electronic equipment, and the specific scheme thereof is as follows:

[0005] A silicon wafer measurement method, comprising:

[0006] Obtain silicon wafer measurement request;

[0007] In response to the wafer measurement request, retrieve information in a target measurement list, wherein the target measurement list includes position parameters and configuration parameters of at least one measurement target on the wafer to be measured, and at least one measurement target in the target measurement list is of the same type;

[0008] Setting measurement configuration data based on configuration parameters in the target measurement list;

[0009] At least one measurement target included in the target measurement list is measured according to the position parameters based on the set measurement configuration data.

[0010] Further, in response to the wafer measurement request, retrieving information in the target measurement list includes:

[0011] In response to the silicon wafer measurement request, at least one measurement list corresponding to the silicon wafer to be measured specified by the silicon wafer measurement request is sorted according to a specific rule, where different measurement lists include different types of measurement targets;

[0012] The information of the target measurement list in the at least one measurement list is retrieved according to the sorting.

[0013] Furthermore, it also includes:

[0014] After measuring at least one measurement target included in the target measurement list, information of a measurement list located after the target measurement list in the at least one measurement list is retrieved according to the order.

[0015] Furthermore, it also includes:

[0016] constructing the measurement list;

[0017] Wherein, constructing the measurement list includes:

[0018] Construct a blank measurement list;

[0019] Recording location information of a plurality of measurement targets of the first type in the blank measurement list;

[0020] Obtaining configuration parameters corresponding to the measurement target of the first type;

[0021] The configuration parameters corresponding to the plurality of measurement targets of the first type are recorded in the blank measurement list to obtain the measurement list.

[0022] Furthermore, recording the location information of a plurality of measurement targets of the first type in the blank measurement list includes:

[0023] Acquire a first image of the silicon wafer to be measured by using a coarse positioning camera, so as to obtain a first type of measurement target on the first image;

[0024] The position information of the first type of measurement target on the silicon wafer to be measured is determined by using a measurement camera and the first type of measurement target on the first image.

[0025] Further, the measuring at least one measurement target included in the target measurement list according to the position parameter based on the measurement configuration data that has been set includes:

[0026] Configure the measurement camera according to the measurement configuration data;

[0027] The configured measurement camera is used to measure the measurement target on the silicon wafer to be measured that matches the position parameter.

[0028] Furthermore, the configuration parameters included in the target measurement list are used to configure imaging rules of a measurement camera, so that the at least one measurement target is measured by the configured measurement camera.

[0029] A silicon wafer measurement system, comprising:

[0030] An obtaining unit, used for obtaining a silicon wafer measurement request;

[0031] a calling unit, configured to call information in a target measurement list in response to the wafer measurement request, wherein the target measurement list includes position parameters and configuration parameters of at least one measurement target on the wafer to be measured, and at least one measurement target in the target measurement list is of the same type;

[0032] A setting unit, configured to set measurement configuration data based on configuration parameters in the target measurement list;

[0033] A measurement unit is used to measure at least one measurement target included in the target measurement list according to the position parameter based on the measurement configuration data that has been set.

[0034] An electronic device, comprising:

[0035] A processor is used to obtain a silicon wafer measurement request; in response to the silicon wafer measurement request, retrieve information in a target measurement list, wherein the target measurement list includes position parameters and configuration parameters of at least one measurement target on the silicon wafer to be measured, and at least one measurement target in the target measurement list is of the same type; set measurement configuration data based on the configuration parameters in the target measurement list; and measure at least one measurement target included in the target measurement list according to the position parameters based on the measurement configuration data that has been set;

[0036] The memory is used to store the program required by the processor to execute the above processing process.

[0037] A readable storage medium for storing at least one set of instructions;

[0038] The instruction set is used to be called and at least execute any one of the silicon wafer measurement methods described above.

[0039] It can be seen from the above technical scheme that the silicon wafer measurement method, system and electronic device disclosed in the present application obtain a silicon wafer measurement request; in response to the silicon wafer measurement request, retrieve information in a target measurement list, the target measurement list includes position parameters and configuration parameters of at least one measurement target on the silicon wafer to be measured, and at least one measurement target in the target measurement list is of the same type; measurement configuration data is set based on the configuration parameters in the target measurement list; at least one measurement target included in the target measurement list is measured according to the position parameters based on the measurement configuration data that has been set. When measuring the silicon wafer to be measured, the present scheme can retrieve information in the target measurement list so as to measure at least one measurement target of the same type included in the target measurement list according to the information in the target measurement list. By setting information of the same type of measurement targets in the measurement list and measuring according to the measurement list during measurement, the same type of measurement targets can be measured simultaneously, and the measurement configuration data of the same type of measurement targets are uniformly set, without the need to frequently switch the measurement configuration data, thereby improving the measurement efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related technologies, the drawings required for use in the embodiments or the related technical descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0041] Figure 1 A flow chart of a silicon wafer measurement method disclosed in an embodiment of the present application;

[0042] Figure 2 A flow chart of a silicon wafer measurement method disclosed in an embodiment of the present application;

[0043] Figure 3 A flow chart of a silicon wafer measurement method disclosed in an embodiment of the present application;

[0044] Figure 4 A schematic diagram of the structure of a silicon wafer measurement system disclosed in an embodiment of the present application;

[0045] Figure 5 A schematic diagram of the structure of an electronic device disclosed in an embodiment of the present application. DETAILED DESCRIPTION

[0046] The following describes the embodiments of the present application in conjunction with the drawings in the embodiments of the present application. The terms used in the implementation method section of the present application are only used to explain the specific embodiments of the present application, and are not intended to limit the present application.

[0047] The embodiments of the present application are described below in conjunction with the accompanying drawings. Those skilled in the art will appreciate that, with the development of technology and the emergence of new scenarios, the technical solutions provided in the embodiments of the present application are also applicable to similar technical problems.

[0048] The terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and need not be used to describe a specific order or sequential order. It should be understood that the terms used in this way can be interchangeable under appropriate circumstances, which is only to describe the distinction mode adopted by the objects of the same attributes when describing in the embodiments of the present application. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, so that the process, method, system, product or equipment comprising a series of units need not be limited to those units, but may include other units that are not clearly listed or inherent to these processes, methods, products or equipment.

[0049] This application discloses a silicon wafer measurement method, and its flow chart is as follows: Figure 1 As shown, including:

[0050] Step S11, obtaining a silicon wafer measurement request;

[0051] Step S12, in response to the wafer measurement request, retrieve information in a target measurement list, the target measurement list including position parameters and configuration parameters of at least one measurement target on the wafer to be measured, at least one measurement target in the target measurement list being of the same type;

[0052] Step S13, setting measurement configuration data based on the configuration parameters in the target measurement list;

[0053] Step S14: measuring at least one measurement target included in the target measurement list according to the position parameters based on the measurement configuration data that has been set.

[0054] Wafer metrology is the process of performing a series of tests and analyses on silicon wafers to ensure that they meet the quality standards and requirements of the semiconductor manufacturing process.

[0055] Silicon wafer measurement usually defines the measurement target points that need to be measured in the measurement field, and performs the measurement test process for each target point separately. The measurement target points on the same silicon wafer are independent of each other, so there will be different measurement rules. During the measurement process, the measurement parameters need to be switched frequently, which will lead to reduced measurement efficiency.

[0056] For example, in a measurement field corresponding to a silicon wafer, there are 20 measurement targets, including 4 different types of measurement targets, and 5 measurement targets of each type. Then, 20 measurement tests need to be created and set up and trained separately, which is time-consuming and labor-intensive.

[0057] Based on this, a measurement list is created in this solution. The same measurement list records the information of the same type of measurement targets. When it is necessary to measure the silicon wafer to be measured, the same type of measurement targets are retrieved according to the measurement list. There is no need to set up and measure the measurement Tests of multiple measurement targets of the same type multiple times, and there is no need to frequently switch measurement parameters, that is, measurement configuration data, which improves measurement efficiency and simplifies the measurement process.

[0058] Specifically, obtaining a silicon wafer measurement request may be as follows: if it is detected that a silicon wafer is placed at the target position, it is determined that the silicon wafer needs to be measured, and at this time, a silicon wafer measurement request may be automatically generated, wherein the silicon wafer to be measured in the silicon wafer measurement request is the silicon wafer placed at the target position; or, it may be as follows: first obtaining a request input by a user, and then prompting the user to place a silicon wafer at the target position based on the request; after the silicon wafer is placed at the target position, it is determined that the placed silicon wafer is the silicon wafer to be measured, and based on this, a silicon wafer measurement request is generated, so as to respond to the silicon wafer measurement request and automatically execute subsequent processes.

[0059] After obtaining the wafer measurement request, the wafer requested for measurement in the wafer measurement request, ie, the wafer to be measured, is determined, and in response to the wafer measurement request, information in the target measurement list is retrieved.

[0060] The target measurement list is used to record the position information and configuration parameters of at least part of the measurement targets on the silicon wafer to be measured, and at least part of the measurement targets recorded therein are the same type of measurement targets on the silicon wafer to be measured.

[0061] Taking the target measurement list recording the measurement targets of the target type on the silicon wafer to be measured as an example, if the silicon wafer to be measured includes multiple measurement targets, among which the number of measurement targets of the target type is 1, then the target measurement list records the 1 measurement target of the target type on the silicon wafer to be measured; if the number of measurement targets of the target type on the silicon wafer to be measured is n, and n is a positive integer greater than 1, then the target measurement list records the n measurement targets of the target type on the silicon wafer to be measured.

[0062] The silicon wafer to be measured includes multiple measurement targets, and different measurement targets are located at different positions of the silicon wafer to be measured. In order to accurately measure each measurement target on the silicon wafer to be measured, it is necessary to accurately determine the position of each measurement target on the silicon wafer to be measured and record it in the corresponding position in the corresponding measurement list.

[0063] In addition, the same configuration parameters are configured for the measurement targets of the same type on the silicon wafer to be measured, and the configuration parameters are recorded in the measurement list. For example, the position information of all measurement targets of the target type on the silicon wafer to be measured is recorded in the target measurement list, and the same configuration parameters corresponding to all measurement targets of the target type on the silicon wafer to be measured are also recorded in the target measurement list, so that when measuring the measurement targets of the target type, the information in the target measurement list can be directly called.

[0064] Among them, the configuration parameters are data used to configure the measurement tool. The measurement tool can be a measurement camera, etc. When the measurement tool is configured according to the configuration parameters, it can measure the measurement target of the type corresponding to the configuration parameters; if the measurement tool is not configured according to the configuration parameters, it cannot accurately measure the measurement target of the type corresponding to the configuration parameters.

[0065] Therefore, in response to a silicon wafer measurement request, after retrieving the information in the target measurement list, the measurement configuration data of the measurement tool needs to be set according to the configuration parameters in the target measurement list, so as to realize the configuration of the measurement tool according to the target type corresponding to the target measurement list, and after the configuration is completed, the configured measurement tool is used to measure the corresponding measurement target according to the position information in the target measurement list.

[0066] For example, the target measurement list includes the location information and configuration parameters of the first measurement target, the second measurement target, and the third measurement target of the target type, wherein the location information of the first measurement target, the location information of the second measurement target, and the location information of the third measurement target are different, while the configuration parameters of the first measurement target, the configuration parameters of the second measurement target, and the configuration parameters of the third measurement target are the same. In this case, the configuration parameters can be recorded only once in the target measurement list. First, the measurement tool is set according to the configuration parameters to obtain the measurement tool that has been set, and the location information of the first measurement target is obtained by using the measurement tool that has been set, and the first measurement target is measured by using the location information of the first measurement target. After the measurement of the first measurement target is completed, the measurement tool does not need to be reset, and the next measurement can be directly performed, such as measuring the second measurement target. After the measurement of the second measurement target is completed, the measurement tool still does not need to be reset, but the next measurement can be directly performed, such as measuring the third measurement target.

[0067] Among them, the measurement order of multiple measurement targets included in the target measurement list can be executed according to the record order of the target measurement list, or the measurement order of the measurement targets in the target measurement list can be determined according to a pre-set rule, or the measurement order of the measurement targets in the target measurement list can be determined according to user needs.

[0068] The silicon wafer measurement method disclosed in this embodiment obtains a silicon wafer measurement request; in response to the silicon wafer measurement request, retrieves information in a target measurement list, the target measurement list includes position parameters and configuration parameters of at least one measurement target on the silicon wafer to be measured, and at least one measurement target in the target measurement list is of the same type; measurement configuration data is set based on the configuration parameters in the target measurement list; and at least one measurement target included in the target measurement list is measured according to the position parameters based on the measurement configuration data that has been set. When measuring the silicon wafer to be measured, this scheme can retrieve information in the target measurement list so as to measure at least one measurement target of the same type included in the target measurement list according to the information in the target measurement list. By setting information of the same type of measurement targets in the measurement list and measuring according to the measurement list during measurement, measurement targets of the same type are measured together, and the measurement configuration data of the same type of measurement targets are uniformly set, without the need to frequently switch the measurement configuration data, thereby improving the measurement efficiency.

[0069] This embodiment discloses a silicon wafer measurement method, and its flow chart is as follows: Figure 2 As shown, including:

[0070] Step S21, obtaining a silicon wafer measurement request;

[0071] Step S22, in response to the wafer measurement request, sorting at least one measurement list corresponding to the wafer to be measured specified by the wafer measurement request according to a specific rule, wherein different measurement lists include different types of measurement targets;

[0072] Step S23, retrieving information of a target measurement list in at least one measurement list according to the order, wherein the target measurement list includes position parameters and configuration parameters of at least one measurement target on the silicon wafer to be measured, and at least one measurement target in the measurement list is of the same type;

[0073] Step S24, setting measurement configuration data based on the configuration parameters in the target measurement list;

[0074] Step S25: measuring at least one measurement target included in the target measurement list according to the position parameters based on the measurement configuration data that has been set.

[0075] After obtaining a wafer measurement request, it is necessary to determine the wafer to be measured and to determine measurement lists corresponding to the multiple measurement targets included in the wafer to be measured.

[0076] The silicon wafer to be measured includes multiple measurement targets, and the multiple measurement targets belong to the same type or different types. If all the measurement targets included in the silicon wafer to be measured belong to the same type, then only one measurement list needs to be set, and the measurement list records the location information and configuration parameters of each measurement target in the silicon wafer to be measured;

[0077] If all measurement targets included in the silicon wafer to be measured belong to m different types, where m is a positive integer greater than 1, then m measurement lists need to be set up, each measurement list is used to record one type of measurement target, and different measurement lists record different types of measurement targets.

[0078] For example, the first measurement list is used to record the first type of measurement targets, the second measurement list is used to record the second type of measurement targets, and the third measurement list is used to record the third type of measurement targets. The position information of each first type of measurement target in the silicon wafer to be measured is recorded in the first measurement list, and the first measurement list also records the parameters that need to be configured when measuring the first type of measurement targets; the position information of each second type of measurement target in the silicon wafer to be measured is recorded in the second measurement list, and the second measurement list also records the parameters that need to be configured when measuring the second type of measurement targets; the position information of each third type of measurement target in the silicon wafer to be measured is recorded in the third measurement list, and the third measurement list also records the parameters required for measuring the third type of measurement targets.

[0079] If it is determined that all measurement targets included in the silicon wafer to be measured correspond to only one measurement list, that is, all measurement targets are of the same type, the measurement configuration data is directly set according to the configuration parameters recorded in the measurement list, and each measurement target in the measurement list is measured according to the set measurement configuration data, so that the measurement of the silicon wafer to be measured can be completed;

[0080] If it is determined that there are multiple measurement lists corresponding to all the measurement targets included in the silicon wafer to be measured, that is, the measurement targets included in the silicon wafer to be measured correspond to different types, at this time, the multiple measurement lists can be first sorted according to specific rules, and the different types of measurement targets can be measured respectively according to the sorting.

[0081] Among them, the specific rules can be: sorting according to the number of different types of measurement targets, such as: the number of measurement targets belonging to the first type is greater than the number of measurement targets belonging to the second type, then when sorting, the measurement list corresponding to the first type is placed before the measurement list corresponding to the second type; the specific rules can also be: sorting according to the user's selection, such as: first selecting the measurement target belonging to the first type, and then selecting the measurement target belonging to the second type, then the measurement list corresponding to the first type can be placed before the measurement list corresponding to the second type; of course, the sorting can also be determined according to the distance from a specific point, such as: pre-setting a specific point, determining the type corresponding to the measurement target closest to the specific point as the first in the sorting, and then arranging in order according to the distance. The specific rules can also be other rules, which are not specifically limited here.

[0082] Different types of measurement targets are measured according to the sorting, which can be specifically as follows: the first measurement list in the sorting is selected according to the sorting, and each measurement target included in the first measurement list is measured according to the specified order; when all measurement targets in the first measurement list are measured, the second measurement list in the sorting is selected according to the sorting, and each measurement target included in the second measurement list is measured according to the specified order; when all measurement targets in the second measurement list are measured, the third measurement list in the sorting is selected according to the sorting, and each measurement target included in the third measurement list is sorted according to the specified order, and so on, until the measurement targets included in all measurement lists are measured, the measurement of the silicon wafer to be measured is realized.

[0083] That is, after measuring at least one measurement target included in the target measurement list, information of the measurement list located after the target measurement list in the at least one measurement list is retrieved in order. The target measurement list involved in this embodiment can be any one of the multiple measurement lists.

[0084] For example, the silicon wafer to be measured corresponds to 4 measurement lists, namely, measurement list 1, measurement list 2, measurement list 3 and measurement list 4, which are sorted according to specific rules as follows: measurement list 3 → measurement list 1 → measurement list 4 → measurement list 2. Then, the information in measurement list 3 is first retrieved, and each measurement target in measurement list 3 is measured according to the measurement order in measurement list 3; when all measurement targets in measurement list 3 are measured, the information in measurement list 1 is retrieved, and each measurement target in measurement list 1 is measured according to the measurement order in measurement list 1; when all measurement targets in measurement list 1 are measured, the information in measurement list 4 is retrieved, and each measurement target in measurement list 4 is measured according to the measurement order in measurement list 4; when all measurement targets in measurement list 4 are measured, the information in measurement list 2 is retrieved, and each measurement target in measurement list 2 is measured according to the measurement order in measurement list 2.

[0085] The silicon wafer measurement method disclosed in this embodiment obtains a silicon wafer measurement request; in response to the silicon wafer measurement request, at least one measurement list corresponding to the silicon wafer to be measured specified by the silicon wafer measurement request is sorted according to a specific rule, and different measurement lists include different types of measurement targets; information of a target measurement list in at least one measurement list is retrieved according to the sorting, and the target measurement list includes position parameters and configuration parameters of at least one measurement target on the silicon wafer to be measured, and at least one measurement target in the measurement list is of the same type; measurement configuration data is set based on the configuration parameters in the target measurement list; and at least one measurement target included in the target measurement list is measured according to the position parameters based on the measurement configuration data that has been set. This solution sets different measurement lists for different types of measurement targets on the silicon wafer to be measured, and sets the position parameters and configuration parameters of measurement targets of the same type in the same measurement list to ensure that when measuring the silicon wafer to be measured, it is executed according to the measurement list, that is, measurement targets of the same type are put together for measurement, and there is no need to frequently switch measurement configuration data, thereby improving measurement efficiency.

[0086] This embodiment discloses a silicon wafer measurement method, and its flow chart is as follows: Figure 3 As shown, including:

[0087] Step S31, constructing a measurement list;

[0088] Step S32, obtaining a silicon wafer measurement request;

[0089] Step S33, in response to the wafer measurement request, retrieve information in a target measurement list, the target measurement list including position parameters and configuration parameters of at least one measurement target on the wafer to be measured, and at least one measurement target in the target measurement list is of the same type;

[0090] Step S34, setting measurement configuration data based on the configuration parameters in the target measurement list;

[0091] Step S35: measuring at least one measurement target included in the target measurement list according to the position parameters based on the measurement configuration data that has been set.

[0092] When a silicon wafer measurement request is obtained, information in a target measurement list of the silicon wafer to be measured corresponding to the silicon wafer measurement request needs to be retrieved in response to the silicon wafer measurement request, wherein the target measurement list is one of the measurement lists in the silicon wafer to be measured, and the measurement list is a pre-constructed list corresponding to multiple measurement targets of the silicon wafer to be measured, information of different types of measurement targets in the same silicon wafer to be measured is set in different measurement lists, and information of the same type of measurement targets in the same silicon wafer to be measured is set in the same measurement list.

[0093] Therefore, before obtaining a wafer measurement request, a measurement list must be constructed for multiple measurement targets included in the wafer; or, after obtaining a wafer measurement request, a wafer to be measured must be determined, and a measurement list must be constructed for multiple measurement targets included in the wafer to be measured.

[0094] Among them, constructing a measurement list can be specifically as follows: constructing a blank measurement list; recording the location information of multiple measurement targets of the first type in the blank measurement list; obtaining configuration parameters corresponding to the measurement targets of the first type; and recording the configuration parameters corresponding to the multiple measurement targets of the first type in the blank measurement list to obtain a measurement list.

[0095] When constructing a measurement list for a silicon wafer to be measured, a blank measurement list may be constructed first, and information of multiple measurement targets of a certain type may be recorded in the blank measurement list to complete filling of the blank measurement list and construct a measurement list corresponding to a certain type.

[0096] If the first type of measurement list is constructed first, after the blank measurement list is constructed, the first type of measurement targets included in the silicon wafer to be measured must be determined first, and the location information of each first type of measurement target must be determined. The location information of each first type of measurement target must first be added to the blank measurement list. In addition, the configuration parameters that need to be set to achieve the measurement of the first type of measurement target must be obtained, and the configuration parameters must be added to the blank measurement list as the configuration parameters required for measuring the first type of measurement target. When the location information and configuration parameters of the first type of measurement target are added to the blank measurement list, the measurement list corresponding to the first type of measurement target is constructed.

[0097] The construction of other types of measurement lists is the same as the construction of the first type of measurement list, and its construction method is not repeated here. In addition, the construction of different types of measurement lists for the same silicon wafer to be measured can be performed sequentially or simultaneously to save the time of building the list and improve the measurement efficiency.

[0098] Among them, the configuration parameters corresponding to the first type of measurement target can be obtained by: directly input by the user; or by: obtaining based on historical records, such as: determining the configuration parameters used when measuring the first type of measurement target in other silicon wafers in the historical records, or determining the configuration parameters corresponding to the first type of measurement target in other silicon wafers stored in the historical records.

[0099] In addition, recording the position information of multiple measurement targets of the first type in the blank measurement list can be as follows: using a coarse positioning camera to obtain a first image of the silicon wafer to be measured so as to obtain the measurement targets of the first type on the first image; and using the measurement camera and the measurement targets of the first type on the first image to determine the position information of the measurement targets of the first type on the silicon wafer to be measured.

[0100] That is, firstly, a coarse positioning camera is used for coarse positioning, and then the measurement camera is used to accurately determine the position information of the coarsely positioned measurement target.

[0101] A first image of the silicon wafer to be measured is acquired by using a coarse positioning camera. The first image is an overall plane image of the silicon wafer to be measured, and may also be a plane image of the silicon wafer to be measured included in the measurement field.

[0102] Obtaining the first type of measurement target on the first image may be: a user selects a measurement target on the first image, determines that the measurement target is of the first type, and records information of the first type of measurement target in a blank measurement list based on the user's selection; or, it may be: a system corresponding to the silicon wafer measurement method disclosed in this embodiment automatically selects a measurement target from the first image, determines that the measurement target is of the first type, and records information of the first type of measurement target in a blank measurement list based on the automatic selection of the system.

[0103] Obtaining the first type of measurement target on the first image, each time obtaining a first type of measurement target, obtaining its position parameter, and adding the position parameter to the blank measurement list; or first obtaining all the first type of measurement targets in the silicon wafer to be measured, then obtaining the position parameter of each first type of measurement target in turn, and adding them to the blank measurement list;

[0104] Alternatively, it may be as follows: multiple blank measurement lists are pre-constructed, and each time a measurement target is obtained on the first image, its type and position parameters are determined, and its position parameters are recorded in the blank measurement list corresponding to the corresponding type, until the position parameters of all measurement targets on the first image are recorded in the corresponding measurement lists.

[0105] After obtaining the first type of measurement target on the first image, the measurement camera can be switched, and the position information of the first type of measurement target on the first image can be determined by using the measurement camera. The system can have a built-in algorithm to automatically calculate the precise position of the measurement target in the coordinate system to obtain its precise coordinate position.

[0106] For example, for silicon wafers, the R3 positioning vector, i.e., the vector in three-dimensional space, can be obtained by calculating the precise position of the measurement target on the wafer coordinate system. The wafer coordinate system is a coordinate system constructed with the center of the wafer as the origin.

[0107] After constructing the measurement lists corresponding to all types, in response to the silicon wafer measurement request, the information in a certain type of measurement list can be retrieved in the corresponding order, and the measurement configuration data of the measurement camera can be set according to the configuration parameters recorded in the measurement list of that type to obtain a measurement camera with complete settings. Thereafter, the measurement camera is used to measure the measurement targets corresponding to the corresponding position parameters in turn according to the measurement order of each measurement target in the measurement list to complete the measurement of all measurement targets in a certain type of measurement list, and continue to retrieve information in other types of measurement lists until the measurement targets corresponding to all measurement lists corresponding to the silicon wafer to be measured are measured, thereby achieving measurement of the silicon wafer to be measured.

[0108] It should be noted that the configuration parameters included in the measurement list are used to configure the imaging rules of the measurement camera, and the imaging rules may include optical parameters, hardware performance, etc. Taking optical parameters as an example, the following optical parameters of the measurement camera can be configured: exposure time, attenuation plate, Na aperture position, etc.

[0109] By recording the information of the same type of measurement targets in the same silicon wafer to be measured in the same measurement list, the measurement camera only needs to be configured once during measurement to complete the measurement of all measurement targets of this type, which greatly improves the imaging stability and measurement efficiency of the measurement.

[0110] In addition, the position parameters and configuration parameters of the same type of measurement targets in the same silicon wafer to be measured are recorded in the same measurement list. When the measurement method or measurement rule of a certain type of measurement target is modified, it is only necessary to modify the records in the measurement list of that type to achieve synchronization of all measurement targets of that type. There is no need to modify and maintain each measurement target of that type in turn, which improves the efficiency of measurement maintenance.

[0111] The silicon wafer measurement method disclosed in this embodiment comprises the following steps: constructing a measurement list; obtaining a silicon wafer measurement request; in response to the silicon wafer measurement request, retrieving information in a target measurement list, wherein the target measurement list includes position parameters and configuration parameters of at least one measurement target on the silicon wafer to be measured, and at least one measurement target in the target measurement list is of the same type; setting measurement configuration data based on the configuration parameters in the target measurement list; and measuring at least one measurement target included in the target measurement list according to the position parameters based on the measurement configuration data that has been set. This scheme constructs a measurement list in advance, and when obtaining a silicon wafer measurement request, retrieves a target measurement list in the constructed measurement list, so as to complete the measurement of the measurement targets included in the target measurement list according to the information in the target measurement list, that is, putting measurement targets of the same type together for measurement, without the need to frequently switch measurement configuration data, thereby improving measurement efficiency.

[0112] This embodiment discloses a silicon wafer measurement system, and its structural schematic diagram is shown in FIG. Figure 4 As shown, including:

[0113] An obtaining unit 41 , a calling unit 42 , a setting unit 43 and a measuring unit 44 .

[0114] Wherein, the obtaining unit 41 is used to obtain a silicon wafer measurement request;

[0115] The retrieving unit 42 is used to retrieve information in a target measurement list in response to a wafer measurement request, wherein the target measurement list includes position parameters and configuration parameters of at least one measurement target on the wafer to be measured, and at least one measurement target in the target measurement list is of the same type;

[0116] The setting unit 43 is used to set the measurement configuration data based on the configuration parameters in the target measurement list;

[0117] The measurement unit 44 is used to measure at least one measurement target included in the target measurement list according to the position parameter based on the set measurement configuration data.

[0118] Furthermore, the calling unit is used to:

[0119] In response to a wafer measurement request, at least one measurement list corresponding to the wafer to be measured specified in the wafer measurement request is sorted according to specific rules, and different measurement lists include different types of measurement targets; information of a target measurement list in at least one measurement list is retrieved according to the sorting.

[0120] Furthermore, the calling unit is used to:

[0121] After measuring at least one measurement target included in the target measurement list, information of a measurement list located after the target measurement list in the at least one measurement list is retrieved in order.

[0122] Furthermore, the silicon wafer measurement system disclosed in this embodiment may also include:

[0123] Construction unit, used to construct measurement lists;

[0124] Among them, the building blocks are used for:

[0125] Construct a blank measurement list; record the location information of multiple measurement targets of the first type in the blank measurement list; obtain configuration parameters corresponding to the measurement targets of the first type; record the configuration parameters corresponding to the multiple measurement targets of the first type in the blank measurement list to obtain a measurement list.

[0126] Furthermore, the building blocks are used to:

[0127] A first image of the silicon wafer to be measured is acquired by using a coarse positioning camera to obtain a first type of measurement target on the first image; and position information of the first type of measurement target on the silicon wafer to be measured is determined by using the measurement camera and the first type of measurement target on the first image.

[0128] Furthermore, the measuring unit is used to:

[0129] The measurement camera is configured according to the measurement configuration data; and the measurement target on the silicon wafer to be measured that matches the position parameters is measured using the configured measurement camera.

[0130] Furthermore, the configuration parameters included in the target measurement list are used to configure the imaging rules of the measurement camera, so as to measure at least one measurement target through the configured measurement camera.

[0131] The silicon wafer measurement system disclosed in this embodiment is implemented based on the silicon wafer measurement method disclosed in the above embodiments, which will not be described in detail here.

[0132] The silicon wafer measurement system disclosed in this embodiment obtains a silicon wafer measurement request; in response to the silicon wafer measurement request, retrieves information in a target measurement list, the target measurement list includes position parameters and configuration parameters of at least one measurement target on the silicon wafer to be measured, and at least one measurement target in the target measurement list is of the same type; sets measurement configuration data based on the configuration parameters in the target measurement list; and measures at least one measurement target included in the target measurement list according to the position parameters based on the measurement configuration data that has been set. When measuring the silicon wafer to be measured, this scheme can retrieve information in the target measurement list so as to measure at least one measurement target of the same type included in the target measurement list according to the information in the target measurement list. By setting information of the same type of measurement targets in the measurement list and measuring according to the measurement list during measurement, simultaneous measurement of the same type of measurement targets is achieved, and the measurement configuration data of the same type of measurement targets are uniformly set, without the need to frequently switch the measurement configuration data, thereby improving the measurement efficiency.

[0133] This embodiment discloses an electronic device, and its structural diagram is as follows: Figure 5 As shown, including:

[0134] Processor 51 and memory 52.

[0135] The processor 51 is used to obtain a wafer measurement request; in response to the wafer measurement request, retrieve information in a target measurement list, where the target measurement list includes position parameters and configuration parameters of at least one measurement target on the wafer to be measured, and at least one measurement target in the target measurement list is of the same type; set measurement configuration data based on the configuration parameters in the target measurement list; and measure at least one measurement target included in the target measurement list according to the position parameters based on the measurement configuration data that has been set;

[0136] The memory 52 is used to store the programs required by the processor to execute the above processing procedures.

[0137] The electronic device disclosed in this embodiment is implemented based on the silicon wafer measurement method disclosed in the above embodiment, which will not be described in detail here.

[0138] The electronic device disclosed in this embodiment obtains a silicon wafer measurement request; in response to the silicon wafer measurement request, retrieves information in a target measurement list, the target measurement list includes position parameters and configuration parameters of at least one measurement target on the silicon wafer to be measured, and at least one measurement target in the target measurement list is of the same type; sets measurement configuration data based on the configuration parameters in the target measurement list; and measures at least one measurement target included in the target measurement list according to the position parameters based on the measurement configuration data that has been set. When measuring the silicon wafer to be measured, this scheme can retrieve information in the target measurement list so as to measure at least one measurement target of the same type included in the target measurement list according to the information in the target measurement list. By setting information of the same type of measurement targets in the measurement list and measuring according to the measurement list during measurement, simultaneous measurement of the same type of measurement targets is achieved, and the measurement configuration data of the same type of measurement targets are uniformly set, without the need to frequently switch the measurement configuration data, thereby improving the measurement efficiency.

[0139] The embodiment of the present application also provides a readable storage medium on which a computer program is stored. The computer program is loaded and executed by a processor to implement the steps of the above-mentioned silicon wafer measurement method. The specific implementation process can refer to the description of the corresponding part of the above-mentioned embodiment, which will not be repeated in this embodiment.

[0140] The present application also proposes a computer program product or a computer program, which includes a computer instruction stored in a computer-readable storage medium. The processor of the electronic device reads the computer instruction from the computer-readable storage medium, and the processor executes the computer instruction, so that the electronic device executes the method provided in various optional implementations of the above-mentioned silicon wafer measurement method or silicon wafer measurement system. The specific implementation process can refer to the description of the above-mentioned corresponding embodiment, and will not be repeated.

[0141] It should also be noted that the device embodiments described above are merely schematic, wherein the units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place, or they may be distributed over multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the scheme of this embodiment. In addition, in the drawings of the device embodiments provided by the present application, the connection relationship between the modules indicates that there is a communication connection between them, which may be specifically implemented as one or more communication buses or signal lines.

[0142] Through the description of the above implementation mode, the technicians in the field can clearly understand that the present application can be implemented by means of software plus necessary general hardware, and of course, it can also be implemented by special hardware including special integrated circuits, special CPUs, special memories, special components, etc. In general, all functions completed by computer programs can be easily implemented by corresponding hardware, and the specific hardware structure used to implement the same function can also be various, such as analog circuits, digital circuits or special circuits. However, for the present application, software program implementation is a better implementation mode in more cases. Based on such an understanding, the technical solution of the present application is essentially or the part that contributes to the prior art can be embodied in the form of a software product, which is stored in a readable storage medium, such as a computer floppy disk, a U disk, a mobile hard disk, a ROM, a RAM, a disk or an optical disk, etc., including a number of instructions to enable a computer device (which can be a personal computer, a training device, or a network device, etc.) to execute the methods described in each embodiment of the present application.

[0143] In the above embodiments, all or part of the embodiments may be implemented by software, hardware, firmware or any combination thereof. When implemented by software, all or part of the embodiments may be implemented in the form of a computer program product.

[0144] The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, the process or function described in the embodiment of the present application is generated in whole or in part. The computer may be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. The computer instructions may be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer instructions may be transmitted from a website site, a computer, a training device, or a data center by wired (e.g., coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) mode to another website site, computer, training device, or data center. The computer-readable storage medium may be any available medium that a computer can store or a data storage device such as a training device, a data center, etc. that includes one or more available media integrations. The available medium may be a magnetic medium, (e.g., a floppy disk, a hard disk, a tape), an optical medium (e.g., a DVD), or a semiconductor medium (e.g., a solid-state drive (SSD)), etc.

Claims

1. A silicon wafer measurement method, characterized in that: include: Obtain silicon wafer measurement request; In response to the wafer measurement request, retrieve information in a target measurement list, wherein the target measurement list includes position parameters and configuration parameters of at least one measurement target on the wafer to be measured, and at least one measurement target in the target measurement list is of the same type; Setting measurement configuration data based on configuration parameters in the target measurement list; At least one measurement target included in the target measurement list is measured according to the position parameters based on the set measurement configuration data.

2. The method according to claim 1, characterized in that The step of retrieving information in a target measurement list in response to the wafer measurement request includes: In response to the silicon wafer measurement request, at least one measurement list corresponding to the silicon wafer to be measured specified by the silicon wafer measurement request is sorted according to a specific rule, where different measurement lists include different types of measurement targets; The information of the target measurement list in the at least one measurement list is retrieved according to the sorting.

3. The method according to claim 2, characterized in that Also includes: After measuring at least one measurement target included in the target measurement list, information of a measurement list located after the target measurement list in the at least one measurement list is retrieved according to the order.

4. The method according to claim 1, characterized in that: Also includes: constructing the measurement list; Wherein, constructing the measurement list includes: Construct a blank measurement list; Recording location information of a plurality of measurement targets of the first type in the blank measurement list; Obtaining configuration parameters corresponding to the measurement target of the first type; The configuration parameters corresponding to the plurality of measurement targets of the first type are recorded in the blank measurement list to obtain the measurement list.

5. The method according to claim 4, characterized in that The recording of the location information of a plurality of measurement targets of the first type in the blank measurement list includes: Acquire a first image of the silicon wafer to be measured by using a coarse positioning camera, so as to obtain a first type of measurement target on the first image; The position information of the first type of measurement target on the silicon wafer to be measured is determined by using a measurement camera and the first type of measurement target on the first image.

6. The method according to claim 1, characterized in that The measuring at least one measurement target included in the target measurement list based on the set measurement configuration data according to the position parameter comprises: Configure the measurement camera according to the measurement configuration data; The configured measurement camera is used to measure the measurement target on the silicon wafer to be measured that matches the position parameter.

7. The method according to claim 1, characterized in that The configuration parameters included in the target measurement list are used to configure the imaging rules of the measurement camera, so as to measure the at least one measurement target through the configured measurement camera.

8. A silicon wafer measurement system, characterized in that: include: An obtaining unit, used for obtaining a silicon wafer measurement request; a calling unit, configured to call information in a target measurement list in response to the wafer measurement request, wherein the target measurement list includes position parameters and configuration parameters of at least one measurement target on the wafer to be measured, and at least one measurement target in the target measurement list is of the same type; A setting unit, configured to set measurement configuration data based on configuration parameters in the target measurement list; A measurement unit is used to measure at least one measurement target included in the target measurement list according to the position parameter based on the measurement configuration data that has been set.

9. An electronic device, characterized in that: include: A processor, configured to obtain a silicon wafer measurement request; In response to the wafer measurement request, retrieve information in a target measurement list, wherein the target measurement list includes position parameters and configuration parameters of at least one measurement target on the wafer to be measured, and at least one measurement target in the target measurement list is of the same type; set measurement configuration data based on the configuration parameters in the target measurement list; and measure at least one measurement target included in the target measurement list according to the position parameters based on the measurement configuration data that has been set; The memory is used to store the program required by the processor to execute the above processing process.

10. A readable storage medium, characterized in that: for storing at least one set of instruction sets; The instruction set is used to be called and at least execute the silicon wafer measurement method according to any one of claims 1 to 7.

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