Wafer processing device

Abstract

The invention discloses a wafer processing device. The wafer processing device comprises a reaction container, wherein a reaction cavity and an inlet end communicated with the reaction cavity along a first direction are arranged in the reaction container; a plurality of wafer clamps are arranged in the reaction cavity; the inlet end is provided with a medium supply pipe for conveying a reaction medium, the medium supply pipe is arranged on the same side of the plurality of wafer clamps along a second direction, the medium supply pipe comprises a medium channel and a plurality of air outlet holes which are formed in the pipe wall of the medium supply pipe and are communicated with the medium channel, and the first direction intersects with the second direction; wherein the air outlet holes are formed in the side, facing the multiple wafer clamps, of the medium channel in the second direction, and the multiple air outlet holes are formed in the first direction at intervals. According to the embodiment of the invention, the gas concentration distribution of each wafer in the reaction container can be balanced, and the differentiated influence of the gas concentration on the wafers at different positions is improved, so that the uniformity of inter-wafer and in-wafer film layers of the wafers is improved, and the wafer processing quality is improved.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor manufacturing technology, and in particular, relates to a wafer processing device. Background Art

[0002] With the development of semiconductor technology, the requirements for wafer processing accuracy in the semiconductor process are getting higher and higher. Not only must the processing accuracy of each wafer be guaranteed, but also the quality uniformity between wafers must be guaranteed to ensure the performance and yield of semiconductor products.

[0003] At present, the thickness of the surface film of wafers processed by wafer processing equipment on the market is greatly affected by the different placement positions of the wafers, resulting in poor surface uniformity of a single wafer and poor uniformity of the film between wafers. Summary of the invention

[0004] The embodiment of the present application provides a wafer processing device, which can improve the uniformity of wafer film thickness and the uniformity of film thickness between wafers.

[0005] On the one hand, an embodiment of the present application provides a wafer processing device, the device comprising:

[0006] A reaction container, comprising a reaction chamber and an entry end connected to the reaction chamber along a first direction;

[0007] A plurality of wafer clamps are arranged in the reaction chamber;

[0008] A medium supply pipe, used for conveying reaction medium, the medium supply pipe extends into the reaction chamber through the entry end, the medium supply pipe is arranged on the same side of the plurality of wafer clamps along the second direction, the medium supply pipe comprises a medium channel and a plurality of air outlets arranged on the wall of the medium supply pipe and connected to the medium channel, and the first direction intersects with the second direction;

[0009] The air outlet holes are arranged along the second direction on a side of the medium channel facing the plurality of wafer clamps, and the plurality of air outlet holes are arranged at intervals in the first direction.

[0010] In a specific embodiment, the medium supply pipe includes a first pipe section, and the first pipe section is arranged corresponding to the multiple wafer clamps in the second direction. In the direction away from the entry end, the spacing between the multiple air outlet holes located on the first pipe section gradually decreases.

[0011] In a specific embodiment, the medium supply pipe includes a second pipe section located on the side of the first pipe section away from the entry end, and the minimum spacing between adjacent air outlet holes on the second pipe section is greater than the minimum spacing between adjacent air outlet holes on the first pipe section.

[0012] In a specific embodiment, in a direction away from the entry end, the spacing between the plurality of air outlet holes on the second pipe section gradually increases.

[0013] In a specific embodiment, the air outlet is disposed at half of the height of the wafer clamp along the third direction.

[0014] In a specific embodiment, the total length of all the air outlet holes is 1.2 to 2 times the total length of the wafer clamp.

[0015] In a specific embodiment, at least part of the wafer clamps are arranged at intervals in a third direction, and in the third direction, the medium supply pipe is located between a plurality of the wafer clamps, and the first direction, the second direction and the third direction intersect each other.

[0016] In a specific embodiment, there are multiple medium supply tubes, and the multiple medium supply tubes are evenly distributed in the reaction chamber, and the multiple medium supply tubes all extend into the reaction chamber through the entry end.

[0017] In a specific embodiment, the reaction container includes a cover structure located at one side of the reaction chamber along the first direction, and the entry end is arranged on the cover structure and located at one side of the center of the cover structure along the second direction;

[0018] It also includes a fixing member disposed in the reaction chamber and connected to the reaction container, the fixing member is located on one side of the plurality of wafer clamps along the second direction, and a surface of one side of the fixing member facing the plurality of wafer clamps is recessed inward to form a limiting groove;

[0019] Wherein, the medium supply pipe portion is located in the limiting groove.

[0020] In a specific embodiment, the reaction container is provided with a detection interface connected to the reaction chamber; and further comprises a temperature detection device inserted in the detection interface and used to detect the temperature of the reaction medium in the reaction chamber.

[0021] The wafer processing device of the embodiment of the present application adopts a side air intake structure of the reaction container, combined with an arrangement scheme of the air outlet holes on the medium supply pipe, that is, multiple air outlet holes are arranged at intervals in the first direction. The airflow is centrally supplied to the medium channel through the medium supply pipe, and then flows out from each air outlet hole. The reaction medium discharged from all the air outlet holes on the medium supply pipe can cover the wafers in each wafer fixture in the horizontal and vertical directions.

[0022] The wafer processing device in the present application can offset the concentration attenuation caused by lateral diffusion, balance the gas concentration distribution around the wafer in each wafer fixture distributed along the first direction, improve the differentiated effects of gas concentration and temperature on wafers at different positions, so that wafers at different positions inside the reaction vessel are in a gas atmosphere of approximately the same concentration, which can improve the inter-wafer and intra-wafer uniformity of the wafer, make the surface film thickness of wafers at different positions in the reaction chamber more uniform, reduce the process difficulty of adjusting the uniformity between wafers, and thus significantly improve the wafer quality and increase the production yield of the wafer. In addition, the present application can effectively expand the gas distribution area of ​​uniform concentration in the reaction chamber, and then more wafer fixtures can be arranged to improve the production efficiency of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solution of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0024] Figure 1 A schematic diagram of a wafer processing device according to some embodiments of the present application;

[0025] Figure 2 A schematic diagram of a medium supply pipe in a wafer processing device according to some embodiments of the present application;

[0026] Figure 3 A schematic diagram of a medium supply pipe in a wafer processing device according to some embodiments of the present application;

[0027] Figure 4 A front view of a reaction container in a wafer processing device according to some embodiments of the present application;

[0028] Figure 5 This is a side view of a reaction container in a wafer processing apparatus according to some embodiments of the present application.

[0029] 10. Wafer processing equipment;

[0030] 11. Reaction container; 12. Wafer fixture; 13. Medium supply pipe; 14. Fixing piece; 15. Detection interface; 16. Furnace door baffle; 17. Wafer;

[0031] 111, reaction chamber; 112, entrance end; 131, medium channel; 132, air outlet; 141, limit groove;

[0032] 1101, cover structure; 1301, first pipe section; 1302, second pipe section;

[0033] X, first direction; Y, second direction; Z, third direction. DETAILED DESCRIPTION

[0034] The following embodiments of the technical solution of the present application are described in detail in conjunction with the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application, and are therefore only used as examples, and cannot be used to limit the scope of protection of the present application.

[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by technicians in the technical field to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" in the specification and claims of this application and the above-mentioned figure descriptions and any variations thereof are intended to cover non-exclusive inclusions.

[0036] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two, unless otherwise clearly and specifically defined.

[0037] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0038] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of the associated objects, indicating that there may be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0039] In the description of the embodiments of the present application, the term "multiple" refers to more than two (including two). Similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0040] In the description of the embodiments of the present application, the technical terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the embodiments of the present application.

[0041] In the description of the embodiments of the present application, unless otherwise clearly specified and limited, technical terms such as "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0042] In the wafer processing technology, thin film forming is usually carried out in a wafer processing device (such as an oxidation tube, a polysilicon furnace, and other furnace tubes). The wafer processing device is equipped with a heating structure such as a furnace wire. By continuously introducing a reaction medium (usually a gas, but also a fluid, the reaction medium below mainly refers to a gas) into the device, the reaction medium can be heated by the heating structure, and then diffused quickly and efficiently on the wafer to form a wafer thin film.

[0043] Usually, the reaction medium is supplied into the reaction vessel of the wafer processing device by vertical gas supply or horizontal gas supply. After research, it is found that the vertical supply of the reaction medium is affected by the gravity of the reaction medium, so the uniformity of the film thickness of each wafer stacked in the height direction cannot be guaranteed. Therefore, the horizontal gas supply method is generally adopted. The horizontal supply method usually adopts the method of introducing the reaction medium into the tail of one end of the reaction vessel, and the reaction medium fills the entire reaction vessel in the whole reaction vessel by natural diffusion, reacts with the glass powder deposited on the surface of the wafer stacked on the wafer fixture, and the reaction medium is finally discharged from the exhaust end to the outside of the reaction vessel. However, the horizontal gas supply method is affected by the diffusion law of the medium, that is, as the reaction medium diffuses, the concentration gradually decreases, and the heating temperature inside the reaction vessel is also affected. For example, the temperature of the reaction medium just entering the reaction vessel is room temperature (about 20 degrees). After entering the reaction vessel, it is gradually heated to 720 degrees as it flows, so that when the reaction medium introduced reacts with the wafer, the concentration values ​​of the medium at different positions in the reaction vessel are quite different.

[0044] In order to make the performance parameters of each wafer as similar as possible and have a high yield, each wafer should be kept in a medium concentration (including gas, temperature) that is as consistent as possible. Considering that the reaction medium, especially the gas medium, enters the reaction vessel at a high speed, turbulent zone, transition zone and advection zone will be formed along the way as the resistance coefficient changes. In order to prevent the influence of the uneven concentration of the turbulent and transition zone fluids on the wafer, at present, the solution of placing the wafer in the advection zone is usually adopted to try to improve the uniformity of the film. However, compared with the concentration at the entrance, the medium concentration in the advection zone is still severely attenuated, and the uniformity of the medium concentration in the advection zone cannot be guaranteed.

[0045] Based on this, in order to solve the above problems, considering the influence of different flow zones on medium concentration, an embodiment of the present application provides a wafer processing device. The device can effectively prevent the formation of flow zones, improve the differential influence of medium concentration attenuation and concentration unevenness caused by flow zone distribution on the film thickness of wafers at different positions, prevent medium concentration attenuation, and improve the uniformity of medium concentration distribution, thereby ensuring the uniformity of film thickness on each wafer surface, and ensuring wafer performance and yield. The wafer processing device provided in the embodiment of the present application is introduced below.

[0046] Next, the embodiment of the present application will specifically describe the structure of the wafer processing device in conjunction with the accompanying drawings.

[0047] refer to Figure 1 , Figure 1 It is a schematic diagram of a wafer processing device according to an embodiment of the present application.

[0048] An embodiment of the present application provides a wafer processing device 10 , including a reaction container 11 , a plurality of wafer clamps 12 , and a medium supply tube 13 .

[0049] The reaction container 11 is provided with a reaction chamber 111 and an entry end 112 connected to the reaction chamber 111 along a first direction X, a plurality of wafer fixtures 12 are arranged in the reaction chamber 111, a medium supply pipe 11 is used to transport a reaction medium, the medium supply pipe 11 extends into the reaction chamber 111 through the entry end 112, and the medium supply pipe 11 is arranged on the same side of the plurality of wafer fixtures 12 along a second direction Y. The medium supply pipe 11 includes a medium channel and a plurality of air outlets arranged on the wall of the medium supply pipe and connected to the medium channel, and the first direction X intersects with the second direction Y. The air outlets are arranged on the side of the medium channel facing the plurality of wafer fixtures along the second direction Y, and the plurality of air outlets are arranged at intervals in the first direction X.

[0050] The reaction vessel 11 is a device frequently used in semiconductor processing technology. The reaction vessel 11 may include a furnace tube, such as a quartz tube, an alloy tube, a stainless steel tube, or a ceramic tube. The interior of the reaction vessel 11 is a closed cavity, which has the reaction vessel 11 inside. The reaction vessel 11 can provide the reaction space required for depositing a thin film on the wafer 17. The reaction vessel 11 can cooperate with an external gas supply system, a negative pressure system, and a control component to supply, output, and flow control of the reaction medium during the wafer reaction process, as well as temperature control during the reaction process. The reaction vessel 11 can be placed in a variety of ways. Optionally, the reaction vessel 11 can be arranged horizontally, vertically, or obliquely. The horizontal arrangement in this application refers to the following: Figure 1 As shown in the figure, the longitudinal direction of the reaction container 11 is not completely horizontally distributed, but may be arranged at a certain angle to the horizontal line.

[0051] An entry end 112 is provided at one end of the reaction vessel 11. The entry end 112 can be arranged on the left or right side of the reaction vessel 11 that is distributed laterally to ensure that the reaction medium can flow along the length direction of the reaction chamber 111 after entering from the entry end 112. Of course, the entry end 112 can also be arranged at the top, bottom or side of the reaction vessel 11 according to actual needs. The entry end 112 can be, but is not limited to, a sleeve-type interface structure, such as a joint with a clamping structure, or an open structure. One end of the entry end 112 is fixedly mounted on the reaction vessel 11, and can be integrally connected or bonded. The entry end 112 plays the role of accommodating and fixing the medium supply pipe 13. The diameter section of the medium supply pipe 13 can match the shape profile of the medium supply pipe 13, which can ensure that the medium supply pipe 13 is arranged substantially at equal intervals with each wafer clamp 12 after being inserted along the entry end 112, so as to form a more uniform reaction medium concentration environment supplied to the wafer clamp 12.

[0052] The medium supply pipe 13 is connected to the pipe body of the external gas supply system (not shown in the figure) through the inlet end 112. The other end of the reaction container 11 is provided with a furnace door baffle 16. The middle part of the furnace door baffle 16 is provided with an outflow end (not shown in the figure). The inlet end 112 and the outflow end are connected to the reaction container 11. The reaction medium enters the reaction container 11 through the inlet end 112, and then the reaction medium in the reaction chamber 111 is discharged through the outflow end, so that the reaction medium is circulated and continuously passed into the reaction chamber 111. The inlet end 112 and the outflow end of the reaction container 11 can be connected along Figure 1 The first direction X is distributed on two opposite sides of the reaction container 11, so that the reaction medium can completely pass through the reaction chamber 111. In addition, the position of the outflow end can also be set according to actual needs, which is not limited herein.

[0053] A plurality of wafer clamps 12 are arranged in the reaction vessel 11. The wafer clamps 12 are placed on a clamp platform in the middle of the reaction vessel 11. The wafer clamps 12 do not contact the inner walls of the four sides of the reaction vessel 11 to obtain a larger contact area. A plurality of wafer placement slots are arranged inside the wafer clamp 12. Each wafer 17 is independently placed in each wafer placement slot. Each wafer 17 in the same wafer clamp 12 is stacked up and down. The plurality of wafer clamps 12 are arranged side by side along the first direction X. The plurality of wafer clamps 12 can be integrally formed, separately connected, or independently distributed. The wafer clamp 12 provides a placement space for wafers to facilitate semiconductor processing.

[0054] The medium supply pipe 13 extends into the interior of the reaction container 11 through the entrance end 112 of the reaction container 11. The medium supply pipe 13 is used to transport the reaction medium to the reaction chamber 111. The medium supply pipe 13 is connected to the entrance end 112 of the reaction container 11 along the first direction X. The outer end of the medium supply pipe 13 is connected to the gas supply system through a hose. The medium supply pipe 13 and the gas supply system are connected and fixed by clamps such as clamps to achieve an airtight connection between the medium supply pipe 13 and the gas supply system.

[0055] In addition, a variety of matching schemes can be adopted between the medium supply tube 13 and the entry end 112 of the reaction container 11, such as plug-in, snap-on, threaded connection, fastener connection, etc., to facilitate the external connection of the medium supply tube 13, which is not limited in this article.

[0056] Specifically, the medium supply pipe 13 can be a tube structure with an opening at one end for entry and a closed end for outflow, or the medium supply pipe 13 can be a tube structure with openings at both ends. The medium supply pipe 13 has a medium channel 131 inside, and the medium channel 131 can be, but is not limited to, a channel with a uniform cross-section, and can also be a channel with a non-uniform cross-section, such as a variable diameter arc channel. A plurality of air outlet holes 132 are arranged on the tube wall of the medium supply pipe 13, and each air outlet hole 132 can be a circular hole, an elliptical hole, a square hole, etc., and each air outlet hole 132 is connected to the medium channel 131. The shape and size of each air outlet hole 132 can be the same or different, but it should be ensured that the size of each air outlet hole 132 is smaller than the cross-sectional size of the medium channel 131, so that the gas supply system continuously transports the reaction medium to the reaction container 11, and the reaction medium interacts with the wafer 17, thereby reacting with the glass powder on the surface of the wafer 17, thereby forming a film layer on the surface of the wafer 17.

[0057] The medium supply pipe 13 is arranged on the same side of all the wafer clamps 12 along the second direction Y intersecting the first direction X, and the air outlet holes 132 are arranged on the side of the medium channel 131 facing the multiple wafer clamps 12 along the second direction Y, and the multiple air outlet holes 132 are spaced apart in the first direction X so as to supply air to the wafer 17 on the wafer clamp 12 from the same side of the wafer clamp 12.

[0058] It should be noted that the first direction in this application can be Figure 1 The X direction in the second direction can be Figure 1 and Figure 2 In addition, in order to reduce the transmission path of the reaction medium supplied from each outlet hole 132, the layout length of the outlet hole 132 in the first direction X can be equal to or greater than the length of the entire wafer clamp 12 in the first direction X. However, the layout length of the outlet hole 132 should not exceed the length of the wafer clamp 12 too much, so that the supply demand of the reaction medium can be guaranteed to meet the processing of the wafer 17, and the concentration of the reaction medium will not be reduced due to excessive diffusion, thereby saving energy.

[0059] The wafer processing device provided in the present application supplies the reaction medium into the reaction vessel 11 in a centralized manner through the medium supply tube 13, and performs processing on the wafer 17 on the wafer clamp 12 on one side, thereby improving the uniformity of gas concentration and temperature in the reaction vessel 11, thereby reducing the differences within and between wafers 17, improving the yield of wafer 17, improving production efficiency, and facilitating mass production of wafer 17.

[0060] The wafer processing device provided in the present application adopts a method of concentratedly supplying the reaction medium from an air inlet pipe on one side of the reaction container 11, which can reduce the diffusion area and prevent the formation of flow zones. The reaction medium is then blown out from one side of the wafer clamp 12 through various smaller-diameter air outlets, forming a concentrated supply to one side of the wafer clamp 12, thereby keeping the concentration of the reaction medium constant and preventing concentration attenuation.

[0061] It should be noted that in addition to the above-mentioned structure, the wafer processing device 10 also includes other various structures. For example, the wafer processing device 10 also includes a heating element (not shown in the figure). The heating element is arranged inside the reaction container 11 to heat and increase the temperature of the reaction medium in the reaction chamber 111.

[0062] refer to Figure 2 , Figure 2 This is a schematic diagram of a medium supply tube according to some embodiments of the present application.

[0063] In some implementations, the medium supply tube 13 includes a first tube segment 1301, and the first tube segment 1301 is correspondingly arranged with multiple wafer clamps 12 in the second direction Y. In the direction away from the entry end 112, the spacing between the multiple air outlet holes 132 located on the first tube segment 1301 gradually decreases.

[0064] The first pipe section 1301 can be a pipe body with one end open and the other end closed, or a structure with both ends open, or a structure with both ends closed. The first pipe section 1301 is arranged corresponding to the plurality of wafer fixtures 12 in the second direction Y, one end of the first pipe section 1301 is assembled at the insertion end of the reaction vessel 11, and the other structures are arranged in the reaction chamber 111. The first pipe section 1301 in the reaction vessel 11 is provided with air outlets 132 at the position corresponding to the wafer fixture 12, all or part of the air outlets 132 are arranged on the first pipe section 1301, and the air outlets 132 are opened in the layout direction toward the wafer fixture 12 to maximize the shortening of the medium transmission path and ensure the medium concentration. In the direction along the first direction X and away from the entry end 112, the spacing between the air outlets 132 on the first pipe section 1301 gradually decreases.

[0065] It can be seen that in this embodiment, the reaction medium supplied from the outside is centrally supplied into the reaction chamber 111 via the first pipe section 1301, and the air outlet holes 132 of the medium supply pipe 13 adopt a variable spacing design, which can gradually increase the spacing between the air holes along the medium transmission direction to further compensate for the attenuation of the medium concentration and ensure that the flow rates corresponding to the wafers 17 on each wafer clamp 12 are roughly equal, thereby improving the uniformity of the film layer.

[0066] It should be noted that the gradual decrease in the hole spacing in the present application can be linear, or can be gradually reduced as a whole, but the spacing between some adjacent holes can be increased and then decreased, or the spacing between some adjacent holes is equal. In addition, each air outlet 132 can also be set at any position of the medium supply pipe 13 according to actual needs, and the air outlet 132 can be set not only in one row, but also in multiple rows, and can also be distributed in a preset area in a certain regularity, such as in an array distribution, or irregular distribution.

[0067] Please refer to Figure 3 Furthermore, the medium supply pipe 13 includes a second pipe section 1302 located on the side of the first pipe section 1301 away from the inlet end 112 , and the minimum distance between adjacent air outlet holes 132 on the second pipe section 1302 is greater than the minimum distance between adjacent air outlet holes 132 on the first pipe section 1301 .

[0068] In this embodiment, the second pipe section 1302 is arranged on the side of the first pipe section 1301 away from the entry end 112. The second pipe section 1302 can be a structure with one end open and the other end closed, or a structure with both ends open. The gas outlet 132 can be arranged on the side of the second pipe section 1302 facing the wafer fixture 12, or can be arranged at any position of the second pipe section 1302 according to actual needs, so as to ensure that there is enough reaction medium to supply the wafer 17 farthest from the entry end 112. The minimum spacing between adjacent gas outlet holes 132 on the second pipe section 1302, all or at least part of the gas outlet holes 132 on the second pipe section 1302 exceed the end surface of the farthest wafer 17, and the minimum spacing between adjacent gas outlet holes 132 on the second pipe section 1302 is greater than the minimum spacing between adjacent gas outlet holes 132 on the first pipe section 1301.

[0069] The length of the second pipe section 1302 can be less than the length of the first pipe section 1302, and the two can be integrally formed or connected by a connector. By setting the first pipe section 1302, the medium supply to most areas of the wafer fixture 12 can be achieved, and by setting the second pipe section 1302, the medium supply to the wafer 17 far from the entry end 112 can be achieved. In order to improve the processing efficiency, the total length of all the air outlets 132 on the two pipe sections along the first direction X is greater than the total length of the wafer fixture 12 along the first direction X, and the total flow area of ​​the reaction medium flowing out of all the air outlets 132 covers the wafer 17 at least in the first direction X and the second direction Y. Such a setting can ensure that there is a sufficient supply of reaction medium, and can effectively reduce the overall length of the medium supply tube 13 and reduce the risk of deformation.

[0070] In some embodiments, in a direction away from the entrance end 112 , the intervals between the plurality of air outlet holes 132 on the second pipe segment 1302 gradually increase.

[0071] Since a small amount of reaction medium flows out near the outflow end of the furnace door baffle 16, the medium concentration is reduced. In view of this, on the basis of the above embodiment, the spacing between the multiple air outlets 132 on the second pipe section 1302 is set to gradually increase in the direction away from the entrance end 112, thereby ensuring that the medium concentration and medium flow rate of the wafers at each location are roughly equal, thereby ensuring the uniformity of the wafer film layer thickness on each wafer clamp 12.

[0072] On the basis of the above embodiments, the air outlet 132 is disposed at half the height of the wafer clamp 12 along the third direction Z.

[0073] The medium supply pipe 13 is along the third direction (which can be Figure 1The air outlet holes 132 on the medium supply tube 13 are arranged at half the height of the medium supply tube 13, that is, the air outlet holes 132 are arranged at half the height of the wafer clamp 12 along the third direction.

[0074] With such arrangement, the flow direction of the gas at the height of the wafer clamp 12 discharged through each gas outlet 132 is arranged at one-half of the height of the wafer clamp 12, thereby ensuring that the reaction medium discharged through the gas outlet 132 is evenly supplied to the wafers 17 at various positions on the wafer clamp 12, further improving the uniformity of the film thickness.

[0075] In addition, the air outlet holes 132 can also be arranged at different heights of the medium supply pipe 13. Specifically, multiple air outlet holes 132 can be arranged on the medium supply pipe 13. The holes located at one-half the height of the medium supply pipe 13 are arranged in a manner in which the spacing gradually decreases and then gradually increases. An air outlet hole 132 is respectively arranged at the upper and lower parts of the middle air outlet hole 132. Each air outlet hole 132 at the upper part is arranged directly above the middle air outlet hole 132, and each air outlet hole 132 at the lower part is arranged directly below the middle air outlet hole 132, forming an array arrangement structure. Thus, a structure for supplying air to the middle, upper and lower parts of the wafer clamp 12 is formed, which can improve the air supply efficiency and further improve the inter-wafer and intra-wafer uniformity of the wafer 17.

[0076] In some embodiments, there are multiple medium supply pipes 13 , which are evenly spaced in the reaction chamber 111 , and all of the multiple medium supply pipes extend into the reaction chamber 111 through the entry end 112 .

[0077] In order to meet the gas supply demand of the wafer 17 on the wafer holder 12, the gas supply can be adjusted in the third direction (such as Figure 5 A plurality of medium supply pipes 13 are arranged in the Z direction (i.e., the vertical direction) in the reaction vessel 11. The plurality of medium supply pipes 13 can extend into the reaction vessel 11 through their respective entry ends 112, or can be connected in parallel and installed at the entry end 112 through a supply branch pipe and a supply main pipe.

[0078] Exemplarily, there are three medium supply pipes 13, namely the first medium supply pipe 13, the second medium supply pipe 13 and the third medium supply pipe 13. The second medium supply pipe 13 and the third medium supply pipe 13 are respectively arranged above and below the first medium supply pipe 13. The second medium supply pipe 13 and the third medium supply pipe 13 are each provided with at least one exhaust hole 132, and the exhaust holes 132 are distributed toward the wafer clamp 12. The three medium supply pipes 13 are arranged in parallel and connected to the external system through the supply main pipe. The central axis of the second medium supply pipe 13 is arranged above the central axis of the first medium supply pipe 13 in parallel and is located at one quarter of the height of the wafer clamp 12 along the second direction Y. A plurality of second exhaust holes are arranged on the wall of the second medium supply pipe 13. The central axis of the third medium supply pipe 13 is arranged parallel to the lower side of the central axis of the medium supply pipe 13 and is located at one quarter of the height of the wafer fixture 12 along the second direction Y. A plurality of third air outlets are arranged on the tube wall of the third medium supply pipe 13. The second air outlet and the third air outlet can be a discharge air outlet 132 structure arranged at one half of the height of the medium supply pipe 13, or can be multiple rows, the hole spacing gradually decreases in the direction away from the entry end 112, the hole spacing at the farthest end of the medium supply pipe 13 gradually increases, and the minimum hole spacing is greater than the hole spacing at other positions. The total flow area of ​​the reaction medium flowing out of all the air outlets 132 covers the wafer 17 at least in the first direction X and the second direction Y. In this way, a gas supply structure for each wafer fixture 12 can be formed, further improving the uniformity of the medium concentration distribution and improving the processing efficiency of the wafer 17.

[0079] To ensure that the gas blown out through the gas outlet holes 132 covers all wafers 17 in the wafer clamp 12 , the total length of the gas outlet holes 132 on the medium supply tube 13 may be, but is not limited to, 1.2 to 2 times the total length of the wafer clamp 12 .

[0080] It should be noted that the number and position of the medium supply pipes 13, as well as the position, number and distribution length of the air outlet holes 132, can be set according to actual needs and are not limited herein.

[0081] Furthermore, one or more groups of wafer clamps 12 can be arranged in the third direction Z inside the reaction chamber 111, and at least some of the wafer clamps 12 are arranged at intervals in the third direction Z. In the third direction Z, the medium supply pipe 13 is located between the multiple wafer clamps 12, and the first direction X, the second direction Y and the third direction Z intersect with each other.

[0082] In view of this, the medium supply pipe 13 can be arranged in the middle area in the third direction Z to realize the medium supply to all wafers 17 in the first direction X and the third direction Z. Alternatively, a structure in which multiple medium supply pipes 13 are distributed in parallel is adopted to synchronously supply the medium to the wafers 17, so that more wafers 17 can be accommodated and the processing efficiency can be improved.

[0083] refer to Figure 4 and Figure 5 In a specific embodiment, the reaction container 11 includes a cover structure 1101 located at one side of the reaction chamber 111 along the first direction X, and the entry end 112 is arranged on the cover structure 1101 and located at one side of the center of the cover structure 1101 along the second direction Y. It also includes a fixing member 14 arranged in the reaction chamber 111 and connected to the reaction container 11, the fixing member 14 is located at one side of the plurality of wafer clamps 12 along the second direction Y, and the surface of one side of the fixing member 14 facing the plurality of wafer clamps 12 is inwardly recessed to form a limiting groove 141, wherein the medium supply pipe 13 is partially located in the limiting groove 141.

[0084] Specifically, the cover structure 1101 is located at one side of the reaction vessel 11 along the first direction X, and the entry end 112 is located at one side of the center of the cover structure 1101 along the second direction Y. The reaction vessel 11 is disposed inside the cover structure 1101, and a fixing member 14 is disposed on the inner wall of the reaction vessel 11. The fixing member 14 can be integrally formed with the cover structure 1101 or detachably connected to the reaction vessel 11.

[0085] The fixing part 14 is arranged on one side of the multiple wafer clamps 12 along the second direction Y, and the fixing part 14 is recessed inward on one side surface toward the multiple wafer clamps 12 to form a limiting groove 141. The mounting end of the medium supply tube 13 away from the entry end 112 is assembled into the limiting groove 141, thereby forming a mounting structure with both ends fixed, thereby improving the reliability of the installation of the medium supply tube 13.

[0086] In this embodiment, the limiting groove 141 provides a space for the medium supply pipe 13 to rotate around the central axis, and the angle of the medium supply pipe 13 can be adjusted according to the parameters, thereby adjusting the gas injection angle, and it is convenient to replace different medium supply pipes 13. In addition, a clamping limiting structure can be set in the limiting groove 141 and the outer wall of the medium supply pipe 13 to achieve anti-rotation limiting after assembly.

[0087] In addition, the reaction container 11 is also provided with a detection interface 15 connected to the reaction chamber 111 , and also includes a temperature detection device (not shown in the figure) inserted into the detection interface 15 and used to detect the temperature of the reaction medium in the reaction chamber 111 .

[0088] The detection interface 15 is connected to the reaction container 11, the end of the temperature detection device is fixed through the detection interface 15, and the detection part in the middle extends into the reaction container 11, so as to detect the temperature of the reaction medium in the reaction container 11. In addition, the end of the temperature detection device is connected to an external control system, so as to perform temperature adjustment test through the control system, realize temperature control of the reaction process, and thus ensure the processing accuracy of the wafer.

[0089] The following example illustrates the air intake structure in the present application. The present application adopts an additional air intake interface at the tail of the reaction vessel 11 in a direction parallel to the center, as the entry end 112 of the medium supply pipe 13, and the setting height of the air intake interface is limited according to the position and height size of the wafer clamp 12 to ensure that it is generally set at half the height of the wafer clamp 12. The medium supply pipe 13 enters the reaction vessel 11 through the air intake interface, and a plurality of air outlet holes 132 (for example, 20 to 30) are opened on the side of the air intake pipe wall facing the wafer 17 according to the gas flow distribution. The air outlet holes 132 have different spacings but are all distributed horizontally to form a structure with air intake at one end and air outlet at the side to ensure horizontal gas blowing. These air outlet holes 132 at different positions can balance the gas flow at various locations of the wafer 17, compensate for the gas concentration attenuation, and can make the wafers 17 at different positions inside the reaction vessel 11 in approximately the same gas atmosphere, thereby improving the uniformity and yield of the wafer 17 between and within the wafer.

[0090] Therefore, the wafer processing device in the present application adopts a gas supply scheme of taking in air at equal heights laterally toward one side of the wafer 17 from the inside of the reaction container 11 and discharging air from various air outlets 132 with different spacings on the side, combined with an arrangement scheme of the air outlets 132 on the medium supply tube 13, that is, the air outlets 132 are arranged at half the height of the wafer clamp 12 along the gas flow direction, and the spacing between the air outlets 132 along the air flow direction tends to gradually decrease. The air flow is centrally supplied through the medium supply tube 13 and then flows out from each air outlet 132. The reaction medium discharged from all the air outlets 132 on the medium supply tube 13 can cover the wafers 17 in each wafer clamp 12 in the horizontal and vertical directions.

[0091] It should be noted that the wafer processing device 10 provided in the present application can be used to control the uniformity of the thickness of the film layer formed on the surface of the wafer 17 during the processing of the wafer 17.

[0092] The wafer processing device in this application has the following technical advantages:

[0093] 1. By adopting a novel wafer processing device 10, different positions inside the reaction vessel 11 (including the wafer 17 near the entry end 112 and the wafer 17 inside the reaction vessel 11) can obtain reaction medium of approximately the same concentration, the gas diffusion uniformity is good, and the concentration of reaction medium between different wafers 17 is uniform, thereby ensuring uniform film thickness and improving the quality of the wafer 17.

[0094] 2. The use of a new type of wafer processing device can reduce the difference in wafer temperature variation at different positions in the reaction container 11 (including the wafer 17 near the entry end 112 and the wafer 17 inside the reaction container 11).

[0095] 3. The use of a new type of wafer processing device effectively expands the distribution range of the uniform gas concentration in the reaction container 11, thereby increasing the number of wafer fixtures 12 and improving processing efficiency.

[0096] 4. The new air inlet pipe structure is adopted, which can not only adjust the gas injection angle according to the parameters, but also facilitate the replacement of the medium supply pipe 13.

[0097] When the wafer processing device in the present application is used to form a wafer film, the following steps can be performed:

[0098] Step 1: Place each wafer 17 layer by layer in the mounting groove of each wafer fixture 12, place each wafer fixture 12 in the reaction container 11, and arrange each wafer fixture 12 side by side along the first direction X;

[0099] Step 2: introducing the reaction medium into the medium supply pipe 13 distributed laterally in the reaction container 11, the reaction medium flows out from each outlet hole 132 of the medium supply pipe 13, reacts with the glass powder attached to the surface of the wafer 17, and forms a coating layer.

[0100] Each wafer 17 obtained by the wafer processing device in the present application has a uniform film thickness on the surface of the wafer 17, and the surface film thickness of the wafer 17 at different positions in the reaction container 11 is uniform, which is conducive to the mass production of semiconductor devices.

[0101] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application may be combined with each other.

[0102] Finally, it should be noted that those skilled in the art will readily conceive of other embodiments of the present invention after considering the specification and practicing the invention disclosed herein. The present invention is intended to cover any variations, uses or adaptations of the present invention, which follow the general principles of the present invention and include common knowledge or customary technical means in the art not disclosed by the present invention, are not limited to the precise structure described above and shown in the drawings, and may be modified and changed in various ways without departing from the scope thereof. The scope of the present invention is limited only by the appended claims.

Claims

1. A wafer processing device, characterized in that: include: A reaction container, comprising a reaction chamber and an entry end connected to the reaction chamber along a first direction; A plurality of wafer clamps are arranged in the reaction chamber; A medium supply pipe, used for conveying reaction medium, the medium supply pipe extends into the reaction chamber through the entry end, the medium supply pipe is arranged on the same side of the plurality of wafer clamps along the second direction, the medium supply pipe comprises a medium channel and a plurality of air outlets arranged on the wall of the medium supply pipe and connected to the medium channel, and the first direction intersects with the second direction; The air outlet holes are arranged along the second direction on a side of the medium channel facing the plurality of wafer clamps, and the plurality of air outlet holes are arranged at intervals in the first direction.

2. The wafer processing device according to claim 1, characterized in that: The medium supply pipe includes a first pipe section, and the first pipe section is arranged corresponding to the plurality of wafer clamps in the second direction. In the direction away from the entry end, the spacing between the plurality of air outlet holes on the first pipe section gradually decreases.

3. The wafer processing device according to claim 2, characterized in that: The medium supply pipe includes a second pipe section located on the side of the first pipe section away from the inlet end, and the minimum distance between adjacent air outlet holes on the second pipe section is greater than the minimum distance between adjacent air outlet holes on the first pipe section.

4. The wafer processing device according to claim 3, characterized in that: In a direction away from the inlet end, the spacing between the plurality of air outlet holes on the second pipe section gradually increases.

5. The wafer processing device according to any one of claims 1 to 4, characterized in that: The air outlet is arranged at half of the height of the wafer clamp along the third direction.

6. The wafer processing device according to claim 5, characterized in that: The total length of all the air outlet holes is 1.2 to 2 times the total length of the wafer clamp.

7. The wafer processing device according to claim 5, characterized in that: At least some of the wafer clamps are arranged at intervals in the third direction. In the third direction, the medium supply pipe is located between a plurality of the wafer clamps. The first direction, the second direction and the third direction intersect each other.

8. The wafer processing device according to claim 5, characterized in that: There are multiple medium supply pipes, which are evenly distributed in the reaction chamber, and all of the multiple medium supply pipes extend into the reaction chamber through entry ends.

9. The wafer processing device according to claim 8, characterized in that: The reaction container comprises a cover structure located at one side of the reaction chamber along the first direction, and the entry end is arranged on the cover structure and located at one side of the center of the cover structure along the second direction; It also includes a fixing member disposed in the reaction chamber and connected to the reaction container, the fixing member is located on one side of the plurality of wafer clamps along the second direction, and a surface of one side of the fixing member facing the plurality of wafer clamps is recessed inward to form a limiting groove; Wherein, the medium supply pipe portion is located in the limiting groove.

10. The wafer processing device according to claim 9, characterized in that: The reaction container is provided with a detection interface connected to the reaction chamber; and further comprises a temperature detection device inserted in the detection interface and used for detecting the temperature of the reaction medium in the reaction chamber.

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