Semiconductor device

Abstract

The purpose of the present invention is to provide a technique whereby it is possible to improve the ease of manufacture of a semiconductor device and to suppress the overflow of a silica gel filled in a container. This semiconductor device is provided with: a container body (1) having a metal base plate (11) and a case (12); an insulating substrate (2) disposed on the metal base plate (11) in the container body (1); a semiconductor element (3) mounted on the insulating substrate (2); and a silica gel (7) which is filled in the container body (1) and seals the insulating substrate (2) and the semiconductor element (3). A groove (8) is provided in a portion of the inner peripheral surface of the case (12) above the upper surface of the silica gel (7), and the groove (8) has a predetermined size capable of generating a capillary phenomenon.

Description

Technical Field

[0001] The present invention relates to semiconductor devices. Background Art

[0002] In the packaging process of the semiconductor device manufacturing process, a portion of the silicone gel rises inside the container due to volume expansion caused by degassing and heating of the silicone gel filled in the container. In addition, when the container is capped, the silicone gel that rises up is sometimes squeezed out to the upper part of the container, which is a silicone gel overflow defect.

[0003] For example, Patent Document 1 describes a technology that forms a bent portion by bending an external lead-out terminal protruding from the upper surface of a resin encapsulant (equivalent to silicone gel), intentionally inducing the resin encapsulant to rise by surface tension, and then depositing on the bent portion of the external lead-out terminal, thereby suppressing overflow of the resin encapsulant.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2019-110217

[0005] However, in the technology described in Patent Document 1, the effect of preventing the overflow of silicone gel depends greatly on the position and shape of the external lead-out terminal, so it is difficult to adopt this technology depending on the type of semiconductor device. Even if it can be adopted, it is necessary to consider the interference with other components such as wires, so it lacks the ease of manufacturing. Summary of the invention

[0006] Therefore, an object of the present invention is to provide a technology that can improve the ease of manufacturing a semiconductor device and suppress overflow of silicone gel filled in a container.

[0007] The semiconductor device according to the present invention comprises: a container body having a bottom and a side wall portion; an insulating substrate arranged on the bottom in the container body; a semiconductor element mounted on the insulating substrate; and a silicone gel filled in the container body to encapsulate the insulating substrate and the semiconductor element, wherein a groove is provided at a portion of the inner peripheral surface of the side wall portion that is located above the upper surface of the silicone gel, and the groove has a predetermined size that can produce a capillary phenomenon.

[0008] Effects of the Invention

[0009] According to the present invention, the silicone gel rising in the container body enters the groove by capillary action, so that the overflow of the silicone gel filled in the container body can be suppressed. In addition, when adopting this structure, there is no need to consider the interference with other components in the container body, so the manufacturing ease of the semiconductor device can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 This is a cross-sectional view of the semiconductor device according to the first embodiment.

[0011] Figure 2 It is a top view of the semiconductor device according to the first embodiment.

[0012] Figure 3 This is a cross-sectional view of a semiconductor device according to the second embodiment.

[0013] Figure 4 This is a cross-sectional view of a semiconductor device according to a third embodiment.

[0014] Figure 5 This is a cross-sectional view of a semiconductor device according to a fourth embodiment. DETAILED DESCRIPTION

[0015] <Implementation Method 1>

[0016] Next, Embodiment 1 will be described with reference to the drawings. Figure 1 This is a cross-sectional view of the semiconductor device according to the first embodiment. Figure 2 It is a top view of the semiconductor device according to the first embodiment.

[0017] like Figure 1 As shown, the semiconductor device includes a container body 1 , an insulating substrate 2 , a semiconductor element 3 , a wire 5 , a terminal 6 , and a silicone gel 7 .

[0018] The container body 1 has a metal base plate 11 as a bottom and a shell 12 as a side wall. The shell 12 is formed into a rectangular frame shape in a plan view and is attached to the peripheral edge of the metal base plate 11. A protrusion 12a protruding toward the inner peripheral side is provided all around the lower end of the inner peripheral portion of the shell 12, and the lower surface of the protrusion 12a is attached to the upper surface of the peripheral portion of the metal base plate 11. In addition, an opening 13 in a rectangular shape in a plan view and opening upward is formed on the inner peripheral side of the shell 12.

[0019] The insulating substrate 2 has an insulating layer 22, a metal pattern 21 provided on the lower surface of the insulating layer 22, and a metal pattern 23 provided on the upper surface of the insulating layer 22. The insulating substrate 2 is bonded to the metal base plate 11 in the container body 1 by a bonding material 4. The bonding material 4 is solder or the like.

[0020] The semiconductor element 3 is mounted on the insulating substrate 2 via the bonding material 4. The semiconductor element 3 is, for example, an IGBT (Insulated Gate Bipolar Transistor), an RC-IGBT (Reverse Conducting-IGBT), a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or a FWD (Free Wheeling Diode). The material of the semiconductor element 3 can be ordinary silicon (Si), or a wide bandgap semiconductor such as silicon carbide (SiC), gallium nitride (GaN) or diamond. When the material of the semiconductor element 3 is a wide bandgap semiconductor, stable operation at high temperature and high voltage and high speed of switching can be achieved. In addition, the number of semiconductor elements 3 can be one or more.

[0021] One end of the terminal 6 is mounted on the housing 12, and the other end of the terminal 6 is bonded to the metal pattern 23 of the insulating substrate 2. The wire 5 connects the terminal 6 and the metal pattern 23 of the insulating substrate 2, and connects the semiconductor elements 3 to each other. In addition, the wire 5 connects the semiconductor element 3 and the terminal 6.

[0022] The silicone gel 7 is filled in the shell 12 of the container body 1 to seal the insulating substrate 2 and the semiconductor element 3 .

[0023] Next, the features of the first embodiment are described. Figure 1 As shown, a groove 8 is provided at a portion located above the upper surface of the silicone gel 7 in the inner peripheral surface of the shell 12, and the groove 8 has a predetermined size that can generate a capillary phenomenon. Due to the volume expansion of the silicone gel 7 generated when the silicone gel 7 filled in the shell 12 is degassed and heated, a part of the silicone gel 7 rises in the shell 12. However, as described above, by providing the groove 8 at a portion located above the upper surface of the silicone gel 7, it is not necessary to consider interference with other components in the container body 1, and the silicone gel 7 rising in the shell 12 can enter the groove 8 by the capillary phenomenon.

[0024] Here, according to experience, the height of the silicone gel 7 rising in the shell 12 is greater than or equal to 1 mm and less than or equal to 2 mm, so the groove 8 only needs to be located in the inner peripheral surface of the shell 12 at a portion several mm above the upper surface of the silicone gel 7.

[0025] In order to make the groove 8 produce a capillary phenomenon, it is necessary to have a height length of greater than or equal to 0.8 mm and less than or equal to 1.2 mm. Figure 2As shown, it is preferred to provide four grooves 8, each of which is provided at the four corners of the housing 12. The reason is that the surface tension between the four corners of the housing 12 and the silicone gel 7 is the largest, and there is a high possibility of affecting the climbing of the silicone gel 7. In addition, in order to make the grooves 8 more effectively generate the capillary phenomenon, it is preferred that the size of the grooves 8 has a height length greater than or equal to 0.8 mm and less than or equal to 1.2 mm, a lateral length greater than or equal to 0.8 mm and less than or equal to 1.2 mm, and a depth greater than or equal to 1.6 mm and less than or equal to 2.4 mm.

[0026] As described above, the semiconductor device according to the first embodiment includes: a container body 1 including a metal base plate 11 and a housing 12; an insulating substrate 2 disposed on the metal base plate 11 in the container body 1; a semiconductor element 3 mounted on the insulating substrate 2; and a silicone gel 7 filled in the container body 1 to encapsulate the insulating substrate 2 and the semiconductor element 3. A groove 8 is provided at a portion of the inner peripheral surface of the housing 12 that is located above the upper surface of the silicone gel 7, and the groove 8 has a predetermined size that enables a capillary phenomenon to occur. Specifically, the groove 8 has a length in the height direction that is greater than or equal to 0.8 mm and less than or equal to 1.2 mm.

[0027] Therefore, the silicone gel 7 rising in the shell 12 of the container body 1 enters the groove 8 by the capillary phenomenon, so it is possible to suppress the overflow of the silicone gel 7 filled in the container body 1. In addition, when adopting this structure, there is no need to consider the interference with other components in the container body 1, so the manufacturing ease of the semiconductor device can be improved.

[0028] In addition, the semiconductor device has four grooves 8, and the shell 12 is formed into a rectangular frame shape when viewed from above. The four grooves 8 are respectively arranged at the four corners of the shell 12, and have a height length greater than or equal to 0.8 mm and less than or equal to 1.2 mm, a lateral length greater than or equal to 0.8 mm and less than or equal to 1.2 mm, and a depth greater than or equal to 1.6 mm and less than or equal to 2.4 mm.

[0029] Therefore, the capillary phenomenon can be more effectively generated in the grooves 8 , and thus the overflow suppression effect of the silicone gel 7 filled in the container body 1 is improved.

[0030] <Implementation Method 2>

[0031] Next, a semiconductor device according to Embodiment 2 will be described. Figure 3 It is a cross-sectional view of a semiconductor device according to Embodiment 2. In Embodiment 2, the same components as those described in Embodiment 1 are denoted by the same reference numerals, and the description thereof is omitted.

[0032] like Figure 3As shown, in the second embodiment, the semiconductor device has a cover 9 provided with a groove 9c instead of the groove 8 of the first embodiment. The cover 9 is installed with a gap to the mounting portion 12b protruding from the inner circumferential surface of the housing 12 to the inner circumferential side so as to cover the opening 13. The gap between the cover 9 and the mounting portion 12b is large enough to allow the silicone gel 7 to pass. The mounting portion 12b may be continuously provided over the entire circumference of the inner circumferential surface of the housing 12, or a plurality of mounting portions 12b may be intermittently provided over the entire circumference of the inner circumferential surface of the housing 12.

[0033] The cover 9 is formed into a rectangular shape when viewed from above, and has an inner cover 9a and an outer cover 9b. The inner cover 9a constitutes the lower part of the cover 9, and is opposite to the silicone gel 7. The outer cover 9b constitutes the upper part of the cover 9, and is located above the inner cover 9a. The inner cover 9a is formed to be smaller than the outer cover 9b, and the top view contour of the inner cover 9a is located on the inner peripheral side compared with the top view contour of the outer cover 9b. Specifically, the top view contour of the inner cover 9a is located at a position greater than or equal to 0.8 mm and less than or equal to 1.2 mm on the inner peripheral side compared with the top view contour of the outer cover 9b. As a result, a gap is formed between the inner peripheral surface of the shell 12 and the inner cover 9a, through which the silicone gel 7 can pass.

[0034] In addition, a groove 9c is provided between the peripheral edge of the outer cover 9b and the peripheral edge of the inner cover 9a, and the gap between the inner peripheral surface of the housing 12 and the inner cover 9a is connected to the groove 9c. The groove 9c is provided over the entire circumference between the peripheral edge of the outer cover 9b and the peripheral edge of the inner cover 9a, and has a depth of greater than or equal to 0.8 mm and less than or equal to 1.2 mm and a length in the height direction corresponding to greater than or equal to 24% and less than or equal to 36% of the thickness of the cover 9.

[0035] Due to the volume expansion of the silicone gel 7 generated when the silicone gel 7 filled in the shell 12 is degassed and heated, a part of the silicone gel 7 rises in the shell 12. The silicone gel 7 that rises in the shell 12 is compressed when the container body 1 is capped, and occasionally causes overflow defects of the silicone gel 7. However, as described above, by providing the groove 9c between the peripheral portion of the outer cover 9b and the peripheral portion of the inner cover 9a, it is not necessary to consider interference with other components in the container body 1, and the silicone gel 7 that is compressed when the cap is capped enters the groove 9c through the gap between the cover 9 and the mounting portion 12b and the gap between the inner peripheral surface of the shell 12 and the inner cover 9a, thereby allowing the silicone gel 7 to remain in the groove 9c.

[0036] As described above, the semiconductor device according to the second embodiment includes: a container body 1 including a metal base plate 11, a housing 12, and an opening 13 opening upward; an insulating substrate 2 disposed on the metal base plate 11 in the container body 1; a semiconductor element 3 mounted on the insulating substrate 2; a silicone gel 7 filled in the container body 1 to seal the insulating substrate 2 and the semiconductor element 3; and a cover 9 covering the opening 13 of the container body 1. The cover 9 includes an inner cover 9a facing the silicone gel 7 and an outer cover 9b located above the inner cover 9a, the top view outline of the inner cover 9a being located on the inner peripheral side compared to the top view outline of the outer cover 9b, and a groove 9c recessed toward the inner peripheral side being provided between the peripheral edge of the outer cover 9b and the peripheral edge of the inner cover 9a.

[0037] Specifically, the top view contour of the inner cover 9a is located at a position greater than or equal to 0.8 mm and less than or equal to 1.2 mm on the inner side compared to the top view contour of the outer cover 9b, and the groove 9c is arranged throughout the entire circumference between the peripheral edge portion of the outer cover 9b and the peripheral edge portion of the inner cover 9a, and has a vertical depth greater than or equal to 0.8 mm and less than or equal to 1.2 mm and a length in the height direction corresponding to greater than or equal to 24% and less than or equal to 36% of the thickness of the cover 9.

[0038] Therefore, the silicone gel 7 rising in the container body 1 is pressed into the groove 9c when the container body 1 is sealed, so that the silicone gel 7 filled in the container body 1 can be suppressed from overflowing. In addition, when this structure is adopted, there is no need to consider the interference with other components in the container body 1, so the manufacturing ease of the semiconductor device can be improved.

[0039] <Implementation Method 3>

[0040] Next, a semiconductor device according to Embodiment 3 will be described. Figure 4 It is a cross-sectional view of a semiconductor device according to Embodiment 3. In Embodiment 3, the same components as those described in Embodiments 1 and 2 are denoted by the same reference numerals, and description thereof is omitted.

[0041] like Figure 4 As shown, in the third embodiment, the semiconductor device has a cover 19 instead of the cover 9 of the second embodiment. The cover 19 is installed with a gap to the mounting portion 12b protruding from the inner circumferential surface of the housing 12 so as to cover the opening 13. The gap between the cover 19 and the mounting portion 12b is large enough to allow the silicone gel 7 to pass through.

[0042] The cover 19 is formed into a rectangular shape when viewed from above, and four bulges 19a are provided on the lower surface of the four corners of the cover 19, each of which protrudes downward. Specifically, the four bulges 19a are provided within a range corresponding to 3% or more and 5% or less of the length of each side of the cover 19, measured from the end of each side of the cover 19. The end of the central part of the cover 19 at the bulge 19a has a shape that is gently inclined toward the central part of the lower surface of the cover 19, thereby ensuring a discharge place for the silicone gel 7 that is compressed when the cover is closed, and as shown in FIG. Figure 4 As shown by the arrows, the silicone gel 7 compressed when the cover is closed is guided to the central part of the lower surface of the cover 19. In addition, the bulged portion 19a has the same thickness as the thickness of the cover 19. In other words, the four corners of the cover 19 where the bulged portion 19a is provided have twice the thickness of the portion other than the four corners of the cover 19.

[0043] Due to the volume expansion of the silicone gel 7 generated when the silicone gel 7 filled in the shell 12 is degassed and heated, a part of the silicone gel 7 rises in the shell 12. The silicone gel 7 that rises in the shell 12 is compressed when the container body 1 is capped, and occasionally causes overflow defects of the silicone gel 7. However, as described above, by providing the bulging parts 19a on the lower surface of the four corners of the cover 19, it is not necessary to consider interference with other components in the container body 1, and it is possible to ensure a discharge location for the silicone gel 7 that is compressed when the cap is capped, and at the same time, the silicone gel 7 is guided to the central part of the lower surface of the cover 19.

[0044] As described above, the semiconductor device according to the third embodiment includes: a container body 1 including a metal base plate 11, a housing 12, and an opening 13 opening upward; an insulating substrate 2 disposed on the metal base plate 11 in the container body 1; a semiconductor element 3 mounted on the insulating substrate 2; a silicone gel 7 filled in the container body 1 to seal the insulating substrate 2 and the semiconductor element 3; and a cover 19 covering the opening 13 of the container body 1. The cover 19 is formed in a rectangular shape in a plan view, and four bulging portions 19a each bulging downward are provided on the lower surface of the four corners of the cover 19.

[0045] Specifically, the four bulging portions 19 a are provided within a range corresponding to 3% or more and 5% or less of the length of each side of the cover 19 from the end of each side of the cover 19 , and have the same thickness as the thickness of the cover 19 .

[0046] Therefore, the silicone gel 7 that rises in the container body 1 is pressed when the container body 1 is capped and moves along the four bulging portions 19a toward the central portion of the lower surface of the cover 19, thereby suppressing the overflow of the silicone gel 7. In addition, when this structure is adopted, there is no need to consider interference with other components in the container body 1, so the manufacturing ease of the semiconductor device can be improved.

[0047] <Implementation Method 4>

[0048] Next, a semiconductor device according to a fourth embodiment will be described. Figure 5 It is a cross-sectional view of a semiconductor device according to Embodiment 4. In Embodiment 4, the same components as those described in Embodiments 1 to 3 are denoted by the same reference numerals, and description thereof is omitted.

[0049] like Figure 5 As shown, in the fourth embodiment, a cover 29 is provided instead of the cover 9 of the second embodiment. The cover 29 is attached to the mounting portion 12b protruding from the inner circumferential surface of the housing 12 with a gap therebetween so as to cover the opening 13. The gap between the cover 29 and the mounting portion 12b is large enough to allow the silicone gel 7 to pass through.

[0050] The cover 29 is formed in a rectangular shape when viewed from above, and four frame portions 29a protruding upward are provided on the upper surface of the peripheral portion of the cover 29 (more specifically, the upper surfaces of the four corners of the cover 29). Four grooves 29b recessed inward are provided on the outer edge portions of the four frame portions 29a. The four frame portions 29a are provided on the upper surfaces of the four corners of the cover 29, and therefore the four grooves 29b are also provided at the portions corresponding to the four corners of the cover 29. The four grooves 29b are each provided within a range corresponding to 3% or more and 5% or less of the length of each side of the cover 29, measured from the end of each side of the cover 29. The length and depth of the four grooves 29b in the height direction are 1% or more and 2% or less of the length of each side of the cover 29.

[0051] Due to the volume expansion of the silicone gel 7 generated when the silicone gel 7 filled in the shell 12 is degassed and heated, a part of the silicone gel 7 rises in the shell 12. The silicone gel 7 that rises in the shell 12 is compressed when the container body 1 is capped, and occasionally causes overflow defects of the silicone gel 7. However, as described above, by providing the four frame portions 29a on the upper surface of the peripheral portion of the cover 29 and providing the grooves 29b on the outer edges of the four frame portions 29a, it is not necessary to consider interference with other components in the container body 1, and the silicone gel 7 that is compressed when the cap is capped enters the grooves 29b through the gap between the cover 29 and the mounting portion 12b and the gap between the inner peripheral surface of the shell 12 and the cover 29, thereby allowing the silicone gel 7 to remain in the grooves 29b.

[0052] As described above, the semiconductor device according to the fourth embodiment includes: a container body 1 including a metal base plate 11, a housing 12, and an opening 13 opening upward; an insulating substrate 2 disposed on the metal base plate 11 in the container body 1; a semiconductor element 3 mounted on the insulating substrate 2; a silicone gel 7 filled in the container body 1 to seal the insulating substrate 2 and the semiconductor element 3; and a cover 29 covering the opening 13 of the container body 1. A frame 29a protruding upward is provided on the upper surface of the peripheral portion of the cover 29, and a groove 29b recessed inward is provided on the outer edge of the frame 29a. Specifically, four frame portions 29a having grooves 29b are provided, and the cover 29 is formed into a rectangle when viewed from above. The four grooves 29b are each provided in a range corresponding to greater than or equal to 3% and less than or equal to 5% of the length of each side of the cover 29 measured from the end of each side of the cover 29, and the length and depth of the four grooves 29b in the height direction are greater than or equal to 1% and less than or equal to 2% of the length of each side of the cover 29.

[0053] Therefore, the silicone gel 7 rising in the container body 1 is pressed into the groove 29b when the container body 1 is sealed, so that the silicone gel 7 filled in the container body 1 can be suppressed from overflowing. In addition, when this structure is adopted, there is no need to consider the interference with other components in the container body 1, so the manufacturing ease of the semiconductor device can be improved.

[0054] Furthermore, the various embodiments may be freely combined, and the various embodiments may be appropriately modified or omitted.

[0055] The aspects of the present invention are summarized below as supplementary notes.

[0056] (Note 1)

[0057] A semiconductor device comprising:

[0058] a container body having a bottom portion and a side wall portion;

[0059] An insulating substrate, which is disposed on the bottom of the container;

[0060] a semiconductor element mounted on the insulating substrate; and

[0061] Silicone gel is filled in the container to encapsulate the insulating substrate and the semiconductor element.

[0062] A groove having a predetermined size capable of causing a capillary phenomenon is provided at a portion of the inner peripheral surface of the side wall portion that is located above the upper surface of the silicone gel.

[0063] (Note 2)

[0064] The semiconductor device according to Supplementary Note 1, wherein:

[0065] The groove has a height direction length greater than or equal to 0.8 mm and less than or equal to 1.2 mm.

[0066] (Note 3)

[0067] The semiconductor device according to Supplement 1 or 2, wherein:

[0068] having 4 said slots,

[0069] The side wall portion is formed into a rectangular frame shape when viewed from above.

[0070] The four grooves are respectively arranged at the four corners of the side wall portion, and have a height length greater than or equal to 0.8 mm and less than or equal to 1.2 mm, a lateral length greater than or equal to 0.8 mm and less than or equal to 1.2 mm, and a depth greater than or equal to 1.6 mm and less than or equal to 2.4 mm.

[0071] (Note 4)

[0072] A semiconductor device comprising:

[0073] A container body having a bottom, a side wall, and an opening opening upward;

[0074] An insulating substrate, which is disposed on the bottom of the container;

[0075] A semiconductor element mounted on the insulating substrate;

[0076] Silicone gel is filled in the container to encapsulate the insulating substrate and the semiconductor element; and

[0077] a cover covering the opening of the container body,

[0078] The cover comprises an inner cover opposite to the silicone gel and an outer cover located above the inner cover.

[0079] The top view outline of the inner cover is located on the inner peripheral side compared with the top view outline of the outer cover.

[0080] A groove recessed toward the inner peripheral side is provided between the peripheral edge portion of the outer cover and the peripheral edge portion of the inner cover.

[0081] (Note 5)

[0082] The semiconductor device according to Supplementary Note 4, wherein:

[0083] The top view outline of the inner cover is located at a position greater than or equal to 0.8 mm and less than or equal to 1.2 mm on the inner circumference side of the top view outline of the outer cover,

[0084] The groove is arranged throughout the entire circumference between the peripheral edge of the outer cover and the peripheral edge of the inner cover, and has a depth greater than or equal to 0.8 mm and less than or equal to 1.2 mm and a length in the height direction corresponding to greater than or equal to 24% and less than or equal to 36% of the thickness of the cover.

[0085] (Note 6)

[0086] A semiconductor device comprising:

[0087] A container body having a bottom, a side wall, and an opening opening upward;

[0088] An insulating substrate, which is disposed on the bottom of the container;

[0089] A semiconductor element mounted on the insulating substrate;

[0090] Silicone gel is filled in the container to encapsulate the insulating substrate and the semiconductor element; and

[0091] a cover covering the opening of the container body,

[0092] The cover is formed into a rectangular shape when viewed from above.

[0093] Four bulging parts bulging downward are respectively provided on the lower surface of the four corners of the cover.

[0094] (Note 7)

[0095] The semiconductor device according to Supplementary Note 6, wherein:

[0096] The four bulging portions are provided within a range corresponding to 3% or more and 5% or less of the length of each side of the cover from the end of each side of the cover, and have the same thickness as the thickness of the cover.

[0097] (Note 8)

[0098] A semiconductor device comprising:

[0099] A container body having a bottom, a side wall, and an opening opening upward;

[0100] An insulating substrate, which is disposed on the bottom of the container;

[0101] A semiconductor element mounted on the insulating substrate;

[0102] Silicone gel is filled in the container to encapsulate the insulating substrate and the semiconductor element; and

[0103] a cover covering the opening of the container body,

[0104] A frame portion protruding upward is provided on the upper surface of the peripheral edge portion of the cover.

[0105] A groove recessed inward is provided on the outer edge of the frame.

[0106] (Note 9)

[0107] The semiconductor device according to Supplementary Note 8, wherein:

[0108] The frame parts having four grooves are provided.

[0109] The cover is formed into a rectangular shape when viewed from above.

[0110] The four grooves are each provided within a range corresponding to 3% or more and 5% or less of the length of each side of the cover, measured from the end of each side of the cover.

[0111] The lengths and depths of the four grooves in the height direction are greater than or equal to 1% and less than or equal to 2% of the lengths of the respective sides of the cover.

[0112] Description of the label

[0113] 1 container body, 2 insulating substrate, 3 semiconductor element, 7 silicone gel, 8 groove, 9 cover, 9a inner cover, 9b outer cover, 9c groove, 11 metal base plate, 12 shell, 13 opening, 19 cover, 19a bulging part, 29 cover, 29a frame part, 29b groove.

Claims

1. A semiconductor device comprising: a container body having a bottom portion and a side wall portion; An insulating substrate, which is disposed on the bottom of the container; A semiconductor element mounted on the insulating substrate; as well as Silicone gel is filled in the container to encapsulate the insulating substrate and the semiconductor element. A groove having a predetermined size capable of causing a capillary phenomenon is provided at a portion of the inner peripheral surface of the side wall portion that is located above the upper surface of the silicone gel.

2. The semiconductor device according to claim 1, wherein The groove has a height direction length greater than or equal to 0.8 mm and less than or equal to 1.2 mm.

3. The semiconductor device according to claim 1 or 2, wherein: having 4 said slots, The side wall portion is formed into a rectangular frame shape when viewed from above. The four grooves are respectively arranged at the four corners of the side wall portion, and have a height length greater than or equal to 0.8 mm and less than or equal to 1.2 mm, a lateral length greater than or equal to 0.8 mm and less than or equal to 1.2 mm, and a depth greater than or equal to 1.6 mm and less than or equal to 2.4 mm.

4. A semiconductor device comprising: A container body having a bottom, a side wall, and an opening opening upward; An insulating substrate, which is disposed on the bottom of the container; A semiconductor element mounted on the insulating substrate; Silicone gel is filled in the container to encapsulate the insulating substrate and the semiconductor element; as well as a cover covering the opening of the container body, The cover comprises an inner cover opposite to the silicone gel and an outer cover located above the inner cover. The top view outline of the inner cover is located on the inner peripheral side compared with the top view outline of the outer cover. A groove recessed toward the inner peripheral side is provided between the peripheral edge portion of the outer cover and the peripheral edge portion of the inner cover.

5. The semiconductor device according to claim 4, wherein: The top view outline of the inner cover is located at a position greater than or equal to 0.8 mm and less than or equal to 1.2 mm on the inner circumference side of the top view outline of the outer cover, The groove is arranged throughout the entire circumference between the peripheral edge of the outer cover and the peripheral edge of the inner cover, and has a depth greater than or equal to 0.8 mm and less than or equal to 1.2 mm and a length in the height direction corresponding to greater than or equal to 24% and less than or equal to 36% of the thickness of the cover.

6. A semiconductor device comprising: A container body having a bottom, a side wall, and an opening opening upward; An insulating substrate, which is disposed on the bottom of the container; A semiconductor element mounted on the insulating substrate; Silicone gel is filled in the container to encapsulate the insulating substrate and the semiconductor element; as well as a cover covering the opening of the container body, The cover is formed into a rectangular shape when viewed from above. Four bulging parts bulging downward are respectively provided on the lower surface of the four corners of the cover.

7. The semiconductor device according to claim 6, wherein: The four bulging portions are provided within a range corresponding to 3% or more and 5% or less of the length of each side of the cover from the end of each side of the cover, and have the same thickness as the thickness of the cover.

8. A semiconductor device comprising: A container body having a bottom, a side wall, and an opening opening upward; An insulating substrate, which is disposed on the bottom of the container; A semiconductor element mounted on the insulating substrate; Silicone gel is filled in the container to encapsulate the insulating substrate and the semiconductor element; as well as a cover covering the opening of the container body, A frame portion protruding upward is provided on the upper surface of the peripheral edge portion of the cover. A groove recessed inward is provided on the outer edge of the frame.

9. The semiconductor device according to claim 8, wherein: The frame parts having four grooves are provided. The cover is formed into a rectangular shape when viewed from above. The four grooves are each provided within a range corresponding to 3% or more and 5% or less of the length of each side of the cover, measured from the end of each side of the cover. The lengths and depths of the four grooves in the height direction are greater than or equal to 1% and less than or equal to 2% of the lengths of the respective sides of the cover.

Images