Cascode cascade type high-voltage large-current gallium nitride power device and manufacturing method thereof

Abstract

The invention relates to a cascode cascade type high-voltage large-current gallium nitride power device and a manufacturing method thereof. The gallium nitride power device comprises a heat conduction substrate, a silicon-based switch tube and a gallium nitride device, the gallium nitride device is connected with the silicon-based switching tube, a through hole is etched in the back surface of the structure of the gallium nitride device, the through hole is connected with a drain electrode on the front surface of the structure of the gallium nitride device, and the through hole is filled with high-thermal-conductivity metal used for reducing the thermal resistance of the gallium nitride device to improve the working current of the gallium nitride device. According to the gallium nitride power device, the through hole is etched in the gallium nitride device, the through hole is filled with the high-thermal-conductivity metal, and the high-thermal-conductivity metal is connected with the drain electrode of the gallium nitride device, so that the thermal resistance of the gallium nitride device is effectively reduced while the normal electrical working condition of the gallium nitride device is ensured; the working current of the gallium nitride device with the voltage withstanding grade of 900V and above can be effectively improved, and the heat dissipation capability of the gallium nitride device is also improved, so that the area of the gallium nitride device is reduced, and the manufacturing yield of the gallium nitride device is improved.

Description

Technical Field

[0001] The present application relates to the technical field of gallium nitride transistors, and in particular to a common-source and common-gate cascade type high-voltage and high-current gallium nitride power device and a manufacturing method thereof. Background Art

[0002] Gallium nitride high electron mobility transistor (GaN HEMT) has the characteristics of high mobility, high breakdown field strength, and wide bandgap. According to the switching state of GaN HEMT power devices at zero voltage, the common types of power devices on the market can be divided into p-type gate GaN HEMT and cascode cascade GaN HEMT. Compared with p-type gate GaN HEMT power devices, cascode cascode GaN HEMT power devices have high threshold voltage and excellent on-resistance performance, and are more suitable for industrial scenarios with high requirements for working stability. Cascode cascade GaN HEMT power devices consist of a low-voltage enhancement-mode silicon-based switch tube Si MOS, such as Figure 3 As shown in 1, a high-voltage depletion-mode GaN HEMT power device is connected in series in the form of a common source and a common gate, as shown in Figure 3 As shown in 2.

[0003] Currently, GaN HEMT power device products on the market are mainly prepared using gallium nitride (GaN) on silicon (Si) substrates due to cost and process popularity. However, silicon (Si) is a narrow bandgap semiconductor, and its leakage current surges with increasing voltage. Therefore, silicon (Si)-based gallium nitride (GaN) is mainly used in the production of GaN HEMT power devices with a withstand voltage of 900V and below. In order to improve the withstand voltage of power devices, the most direct way is to replace the substrate with an insulating material, such as sapphire. However, insulating materials such as sapphire have low thermal conductivity, which is only 16% of silicon (Si) materials, so they can only be used in low current scenarios.

[0004] In order to increase the operating current of high-voltage sapphire-based GaN HEMT power devices, a common method is to thin the substrate. According to the heat transfer path, in order to achieve the same thermal conductivity as silicon-based GaN HEMT power devices, the thickness of the sapphire substrate needs to be reduced to 16% of the silicon Si substrate, which is about 20 to 50 microns according to the actual grain thickness. With such a thin thickness, the power device packaging yield will drop significantly. The common treatment method is to thin the sapphire substrate to 100 to 150 microns, which means that half of the heat dissipation capacity is lost compared to silicon-based devices. If the same operating current is to be achieved, the area of ​​the GaN HEMT power device needs to be expanded accordingly. After the area of ​​the GaN HEMT power device is increased, the cost and process yield of the power device cannot be guaranteed, which has led to the fact that sapphire-based GaN HEMT power devices have not been widely used in high-voltage and high-current scenarios. Summary of the invention

[0005] The present application provides a common-source and common-gate cascade type high-voltage and high-current gallium nitride power device and a manufacturing method thereof, which are used to solve the technical problem that the structure of the existing GaN HEMT power device cannot be applied to high-voltage and high-current scenarios.

[0006] In order to achieve the above objectives, this application provides the following technical solutions:

[0007] On the one hand, a common source and common gate cascade type high voltage and high current gallium nitride power device is provided, comprising:

[0008] A thermally conductive substrate for support;

[0009] A silicon-based switch tube is arranged on the heat-conducting substrate;

[0010] A gallium nitride device is arranged on the thermally conductive substrate, the gallium nitride device is connected to the silicon-based switch tube, a through hole is etched on the back side of the structure of the gallium nitride device, the through hole is connected to the drain on the front side of the structure of the gallium nitride device, and the through hole is filled with a high thermal conductivity metal for reducing the thermal resistance of the gallium nitride device to increase the working current of the gallium nitride device.

[0011] Preferably, the high thermal conductivity metal is copper.

[0012] Preferably, the gallium nitride device comprises a substrate, an adhesive layer, a device active area and a perforated area, a first source, a first gate and a first drain are arranged on the device active area, the device active area is arranged above the substrate, the adhesive layer is arranged below the substrate, the adhesive layer is connected to the thermal conductive substrate, the perforated area is arranged on the substrate and the device active area, the through hole is arranged on the perforated area, one end of the high thermal conductivity metal is connected to the first drain, and the other end of the high thermal conductivity metal is connected to the adhesive layer; the first drain serves as the drain on the front side of the structure of the gallium nitride device.

[0013] Preferably, the silicon-based switching tube includes a tube body, a second source, a second gate and a second drain, the second source and the second gate are arranged above the tube body, the second drain is arranged below the tube body, and the second drain is arranged on the thermal conductive substrate.

[0014] Preferably, the first drain serves as the drain of the common-source and common-gate cascade type high-voltage and high-current gallium nitride power device, the first source is connected to the second drain, the first gate is connected to the second source, and the second gate serves as the gate-drain of the common-source and common-gate cascade type high-voltage and high-current gallium nitride power device.

[0015] Preferably, the first source is connected to the second drain through a metal wire, and the first gate is connected to the second source through a metal wire.

[0016] Preferably, the substrate is made of sapphire material.

[0017] On the other hand, a method for manufacturing a cascade-type high-voltage and high-current gallium nitride power device is provided, which is applied to the cascade-type high-voltage and high-current gallium nitride power device as described above, and is characterized in that it includes the following steps:

[0018] Obtaining materials for preparing common-source and common-gate cascade-type high-voltage and high-current gallium nitride power devices, the materials comprising a thermally conductive substrate, a silicon-based switch tube, and a gallium nitride device;

[0019] The gallium nitride device is processed to obtain a gallium nitride switch tube with a small area and a high operating current;

[0020] The gallium nitride switch tube and the silicon-based switch tube are arranged on the thermally conductive substrate by using an adhesive, and the gallium nitride switch tube and the silicon-based switch tube are connected by using a metal wire to obtain a common source and common gate cascade type high-voltage and high-current gallium nitride power device.

[0021] Preferably, the gallium nitride device is processed to obtain a gallium nitride switch tube with a small area and high operating current, comprising:

[0022] Thinning the substrate of the gallium nitride device to a set thickness to obtain a first gallium nitride device with a small area;

[0023] Performing through-hole etching from the substrate side of the first gallium nitride device to obtain a second gallium nitride device having a through-hole;

[0024] The through hole of the second gallium nitride device is filled with a high thermal conductivity metal for reducing the thermal resistance of the device and increasing the working current of the device, thereby obtaining a gallium nitride switch tube with a small area and a high working current;

[0025] One end of the high thermal conductivity metal is connected to the drain of the second gallium nitride device, and the other end of the high thermal conductivity metal is connected to the adhesive layer of the second gallium nitride device.

[0026] Preferably, the adhesive is a thermally conductive silver paste; and / or the high thermal conductivity metal is copper; and / or the set thickness is 100 μm to 200 μm.

[0027] The common source and common gate cascade type high voltage and high current gallium nitride power device and its manufacturing method, the common source and common gate cascade type high voltage and high current gallium nitride power device comprises a heat conductive substrate and a silicon-based switch tube and a gallium nitride device arranged on the heat conductive substrate; the gallium nitride device is connected to the silicon-based switch tube, a through hole is etched on the back side of the structure of the gallium nitride device, the through hole is connected to the drain on the front side of the structure of the gallium nitride device, and the through hole is filled with a high thermal conductivity metal for reducing the thermal resistance of the gallium nitride device to increase the working current of the gallium nitride device.

[0028] It can be seen from the above technical solutions that the present application has the following advantages: the common source and common gate cascade type high-voltage and high-current gallium nitride power device etches through holes in the gallium nitride device and fills the through holes with high thermal conductivity metal, and the high thermal conductivity metal is connected to the drain of the gallium nitride device, thereby effectively reducing the thermal resistance of the gallium nitride device while ensuring the normal electrical working conditions of the gallium nitride device, and can effectively improve the working current of gallium nitride devices with a withstand voltage level of 900V and above, and also improve the heat dissipation capacity of the gallium nitride device, thereby reducing the area of ​​the gallium nitride device to improve the manufacturing yield of the gallium nitride device; and solves the technical problem that the structure of the existing GaNHEMT power device cannot be applied to high-voltage and high-current scenarios.

[0029] The cascade-type high-voltage and high-current gallium nitride power device manufactured by the manufacturing method of the cascade-type high-voltage and high-current gallium nitride power device can achieve an operating current with a withstand voltage level of 900V or above, and improve the manufacturing yield of the cascade-type high-voltage and high-current gallium nitride power device. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0031] Figure 1 This is a schematic diagram of the structure of a common-source and common-gate cascade type high-voltage and high-current gallium nitride power device according to an embodiment of the present application;

[0032] Figure 2 A flowchart of the steps of a method for manufacturing a common-source and common-gate cascade type high-voltage and high-current gallium nitride power device according to an embodiment of the present application;

[0033] Figure 3 This is a schematic diagram of the cascade principle of the existing cascode cascade GaN HEMT power device. DETAILED DESCRIPTION

[0034] In order to make the purpose, features, and advantages of the invention of this application more obvious and easy to understand, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the embodiments described below are only part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0035] In the description of the embodiments of the present application, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present application, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0036] In the embodiments of the present application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0037] The embodiments of the present application provide a common-source and common-gate cascade type high-voltage and high-current gallium nitride power device and a manufacturing method thereof, which solve the technical problem that the structure of the existing GaN HEMT power device cannot be applied to high-voltage and high-current scenarios.

[0038] Embodiment 1:

[0039] Figure 1 This is a schematic diagram of the structure of a common-source and common-gate cascade type high-voltage and high-current gallium nitride power device described in an embodiment of the present application.

[0040] like Figure 1 As shown, the embodiment of the present application provides a common source and common gate cascade type high voltage and high current gallium nitride power device, including a thermal conductive substrate 10 and a silicon-based switch tube 20 and a gallium nitride device 30 arranged on the thermal conductive substrate 10. The silicon-based switch tube 20 and the gallium nitride device 30 are connected in common source and common gate cascade.

[0041] In the embodiment of the present application, the thermally conductive substrate 10 is used to provide support for the silicon-based switch tube 20 and the gallium nitride device 30 .

[0042] It should be noted that the thermally conductive substrate 10 may be a high thermally conductive aluminum substrate.

[0043] In the embodiment of the present application, the silicon-based switch tube 20 is disposed on the heat-conducting substrate 10. The silicon-based switch tube 20 includes a tube body 21, a second source electrode 22, a second gate electrode 23, and a second drain electrode 24, wherein the second source electrode 22 and the second gate electrode 23 are disposed above the tube body 21, and the second drain electrode 24 is disposed below the tube body 21, and the second drain electrode 24 is disposed on the heat-conducting substrate 10.

[0044] It should be noted that if Figure 1 As shown, the silicon-based switch tube 20 is arranged on the left side of the heat-conducting substrate 10. The second drain 24 is arranged on the heat-conducting substrate 10 through a heat-conducting silver paste. In this embodiment, the silicon-based switch tube 20 is a switch tube device for cascode connection with the gallium nitride device 30. The silicon-based switch tube 20 can be a MOS tube. In other embodiments, the silicon-based switch tube 20 can also be a triode, an IGBT tube, etc.

[0045] In the embodiment of the present application, the gallium nitride device 30 is disposed on the thermally conductive substrate 10, the gallium nitride device 30 is connected to the silicon-based switch tube 20, a through hole 31 is etched on the back side of the structure of the gallium nitride device 30, the through hole 31 is connected to the drain on the front side of the structure of the gallium nitride device 30, and the through hole 31 is filled with a high thermal conductivity metal for reducing the thermal resistance of the gallium nitride device 30 to increase the working current of the gallium nitride device 30.

[0046] It should be noted that the gallium nitride device 30 may be a switch tube device using a hemt structure of GAN. The hemt structure of GAN is a variant that uses a semiconductor device HEMT (High-Electron-Mobility Transistor) as a component in the generator and the discriminator. HEMT is a special transistor with advantages such as high speed, high gain and low noise. In this embodiment, through-hole etching is performed on the back of the gallium nitride device 30 based on the GaN HEMT structure, and a high thermal conductivity metal is filled. At the same time, the high thermal conductivity metal is connected to the front drain of the gallium nitride device 30, which effectively reduces the thermal resistance of the gallium nitride device 30 while ensuring the normal electrical working conditions of the gallium nitride device 30, and improves the heat dissipation capacity of the gallium nitride device 30, thereby reducing the area of ​​the gallium nitride device 30 to improve the manufacturing yield of the gallium nitride device 30. Among them, the high thermal conductivity metal can be selected as copper. In other embodiments, the high thermal conductivity metal can also be selected as aluminum, silver, gold, tungsten, etc.

[0047] In the embodiment of the present application, the common-source and common-gate cascade type high-voltage and high-current gallium nitride power device etches a through hole in the gallium nitride device 30 and fills a high thermal conductivity metal in the through hole 31. The high thermal conductivity metal is connected to the drain of the gallium nitride device 30, thereby effectively reducing the thermal resistance of the gallium nitride device 30 while ensuring the normal electrical working condition of the gallium nitride device 30. It can effectively improve the working current of the gallium nitride device 30 with a withstand voltage level of 900V or above, and also improve the heat dissipation capacity of the gallium nitride device 30, thereby reducing the area of ​​the gallium nitride device 30 to improve the manufacturing yield of the gallium nitride device 30.

[0048] It should be noted that the main difference between the structure of the common source and common gate cascade type high-voltage and high-current gallium nitride power device and the traditional sapphire-based GaN HEMT structure is that after the thinning process of the gallium nitride device, the substrate is punched with through holes and the through holes are filled with high thermal conductivity metal, so that the heat inside the gallium nitride device is directly discharged through the through holes, effectively reducing the overall thermal resistance of the gallium nitride device, and effectively reducing the area of ​​the gallium nitride device, thereby improving the manufacturing yield of the common source and common gate cascade type high-voltage and high-current gallium nitride power device.

[0049] The present application provides a common source and common gate cascade type high voltage and high current gallium nitride power device, comprising a heat conductive substrate, a silicon-based switch tube and a gallium nitride device arranged on the heat conductive substrate; the gallium nitride device is connected to the silicon-based switch tube, a through hole is etched on the back of the structure of the gallium nitride device, the through hole is connected to the drain on the front of the structure of the gallium nitride device, and the through hole is filled with a high thermal conductivity metal for reducing the thermal resistance of the gallium nitride device to increase the working current of the gallium nitride device. The common source and common gate cascade type high voltage and high current gallium nitride power device effectively reduces the thermal resistance of the gallium nitride device while ensuring the normal electrical working conditions of the gallium nitride device, can effectively increase the working current of the gallium nitride device with a withstand voltage level of 900V and above, and also improves the heat dissipation capacity of the gallium nitride device, thereby reducing the area of ​​the gallium nitride device to improve the manufacturing yield of the gallium nitride device; and solves the technical problem that the structure of the existing GaN HEMT power device cannot be applied to high voltage and high current scenarios.

[0050] like Figure 1 As shown, in one embodiment of the present application, the gallium nitride device 30 includes a substrate 32, an adhesive layer 33, a device active area 34 and a perforated area. A first source 35, a first gate 36 and a first drain 37 are arranged on the device active area 34. The device active area 34 is arranged above the substrate 32, the adhesive layer 33 is arranged below the substrate 32, the adhesive layer 33 is connected to the thermal conductive substrate 10, the perforated area is arranged on the substrate 32 and the device active area 34, the through hole 31 is arranged on the perforated area, one end of the high thermal conductivity metal is connected to the first drain 37, and the other end of the high thermal conductivity metal is connected to the adhesive layer 33; the first drain 37 serves as the drain on the front side of the structure of the gallium nitride device 30. The first drain 37 serves as the drain of the common-source and common-gate cascade type high-voltage and high-current gallium nitride power device, the first source 35 is connected to the second drain 24, the first gate 36 is connected to the second source 22, and the second gate 23 serves as the gate and drain of the common-source and common-gate cascade type high-voltage and high-current gallium nitride power device.

[0051] It should be noted that the first source 35 is connected to the second drain 24 through a metal wire 40, and the first gate 36 is connected to the second source 22 through a metal wire 40. The substrate 32 is a substrate made of sapphire material. In this embodiment, the adhesive layer 33 is connected to the thermally conductive substrate 10 through a thermally conductive silver paste.

[0052] Embodiment 2:

[0053] Figure 2 This is a flowchart of the steps of a method for manufacturing a common-source and common-gate cascade-type high-voltage and high-current gallium nitride power device described in an embodiment of the present application.

[0054] like Figure 2As shown, the embodiment of the present application provides a method for manufacturing a common source and common gate cascade type high voltage and high current gallium nitride power device, which is applied to the above-mentioned common source and common gate cascade type high voltage and high current gallium nitride power device, and includes the following steps:

[0055] S1. Obtain materials for preparing common-source and common-gate cascade high-voltage and high-current gallium nitride power devices, including a thermally conductive substrate, a silicon-based switch tube, and a gallium nitride device;

[0056] S2. Processing the gallium nitride device to obtain a gallium nitride switch tube with a small area and high operating current;

[0057] S3. Using an adhesive to place the GaN switch tube and the silicon-based switch tube on a thermally conductive substrate, and using a metal wire to connect the GaN switch tube to the silicon-based switch tube to obtain a common source and common gate cascade type high-voltage and high-current GaN power device;

[0058] The GaN devices are processed to obtain GaN switch tubes with small area and high working current, including:

[0059] Thinning the substrate of the gallium nitride device to a set thickness to obtain a first gallium nitride device with a small area;

[0060] Performing through-hole etching from the substrate side of the first gallium nitride device to obtain a second gallium nitride device having a through-hole;

[0061] The through hole of the second gallium nitride device is filled with a high thermal conductivity metal for reducing the thermal resistance of the device and increasing the working current of the device, thereby obtaining a gallium nitride switch tube with a small area and a high working current;

[0062] One end of the high thermal conductivity metal is connected to the drain of the second gallium nitride device, and the other end of the high thermal conductivity metal is connected to the adhesive layer of the second gallium nitride device.

[0063] It should be noted that the content of the common source and common gate cascade type high voltage and high current gallium nitride power device has been described in Example 1, and the content of the common source and common gate cascade type high voltage and high current gallium nitride power device will not be repeated in this embodiment. In this embodiment, the substrate of the gallium nitride device is first thinned to 100 microns to 200 microns, and then through-hole etching is performed from the substrate side, and then a high thermal conductivity metal such as copper is deposited in the through-hole, and electrically connected to the drain on the front of the gallium nitride device. Thereafter, the bonding layer of the gallium nitride device and the silicon-based switch tube are bonded to the thermally conductive substrate by thermally conductive silver paste, and then the gallium nitride device and the silicon-based switch tube are cascaded by metal wire bonding.

[0064] In the embodiment of the present application, the common source and common gate cascade type high voltage and high current gallium nitride power device manufactured by the manufacturing method of the common source and common gate cascade type high voltage and high current gallium nitride power device can achieve an operating current of a withstand voltage level of 900V and above, and improve the manufacturing yield of the common source and common gate cascade type high voltage and high current gallium nitride power device. Among them, the adhesive can be selected as a thermal conductive silver paste; and / or, the high thermal conductive metal can be selected as copper; and / or, the set thickness can be selected as 100μm~200μm.

[0065] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0066] In the several embodiments provided in the present application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or units, which can be electrical, mechanical or other forms.

[0067] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0068] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of software functional units.

[0069] As described above, the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A common source and common gate cascade type high voltage and high current gallium nitride power device, characterized in that: include: A thermally conductive substrate for support; A silicon-based switch tube is arranged on the heat-conducting substrate; A gallium nitride device is arranged on the thermally conductive substrate, the gallium nitride device is connected to the silicon-based switch tube, a through hole is etched on the back side of the structure of the gallium nitride device, the through hole is connected to the drain on the front side of the structure of the gallium nitride device, and the through hole is filled with a high thermal conductivity metal for reducing the thermal resistance of the gallium nitride device to increase the working current of the gallium nitride device.

2. The cascade type high voltage and high current gallium nitride power device according to claim 1, characterized in that: The high thermal conductivity metal is copper.

3. The cascade type high voltage and high current gallium nitride power device according to claim 1 or 2, characterized in that: The gallium nitride device comprises a substrate, an adhesive layer, a device active area and a perforated area. A first source, a first gate and a first drain are arranged on the device active area. The device active area is arranged above the substrate, the adhesive layer is arranged below the substrate, the adhesive layer is connected to the thermal conductive substrate, the perforated area is arranged on the substrate and the device active area, the through hole is arranged on the perforated area, one end of the high thermal conductivity metal is connected to the first drain, and the other end of the high thermal conductivity metal is connected to the adhesive layer; the first drain serves as the drain on the structural front side of the gallium nitride device.

4. The cascade-type high-voltage and high-current gallium nitride power device according to claim 3, characterized in that: The silicon-based switching tube includes a tube body, a second source, a second gate and a second drain. The second source and the second gate are arranged above the tube body, the second drain is arranged below the tube body, and the second drain is arranged on the thermal conductive substrate.

5. The common-source common-gate cascade type high-voltage and high-current gallium nitride power device according to claim 4, characterized in that: The first drain serves as the drain of the common-source and common-gate cascade type high-voltage and high-current gallium nitride power device, the first source is connected to the second drain, the first gate is connected to the second source, and the second gate serves as the gate-drain of the common-source and common-gate cascade type high-voltage and high-current gallium nitride power device.

6. The cascade-type high-voltage and high-current gallium nitride power device according to claim 5, characterized in that: The first source is connected to the second drain through a metal wire, and the first gate is connected to the second source through a metal wire.

7. The cascaded high-voltage and high-current gallium nitride power device according to claim 3, characterized in that: The substrate is made of sapphire material.

8. A method for manufacturing a cascade-type high-voltage and high-current gallium nitride power device, applied to the cascade-type high-voltage and high-current gallium nitride power device as claimed in any one of claims 1 to 7, characterized in that: The following steps are involved: Obtaining materials for preparing common-source and common-gate cascade-type high-voltage and high-current gallium nitride power devices, the materials comprising a thermally conductive substrate, a silicon-based switch tube, and a gallium nitride device; The gallium nitride device is processed to obtain a gallium nitride switch tube with a small area and a high operating current; The gallium nitride switch tube and the silicon-based switch tube are arranged on the thermally conductive substrate by using an adhesive, and the gallium nitride switch tube and the silicon-based switch tube are connected by using a metal wire to obtain a common source and common gate cascade type high-voltage and high-current gallium nitride power device.

9. The method for manufacturing a cascade-type high-voltage and high-current gallium nitride power device according to claim 8, characterized in that: Processing the gallium nitride device to obtain a gallium nitride switch tube with a small area and high working current includes: Thinning the substrate of the gallium nitride device to a set thickness to obtain a first gallium nitride device with a small area; Performing through-hole etching from the substrate side of the first gallium nitride device to obtain a second gallium nitride device having a through-hole; The through hole of the second gallium nitride device is filled with a high thermal conductivity metal for reducing the thermal resistance of the device and increasing the working current of the device, thereby obtaining a gallium nitride switch tube with a small area and a high working current; One end of the high thermal conductivity metal is connected to the drain of the second gallium nitride device, and the other end of the high thermal conductivity metal is connected to the adhesive layer of the second gallium nitride device.

10. The method for manufacturing a cascade-type high-voltage and high-current gallium nitride power device according to claim 9, characterized in that: The adhesive is a heat-conducting silver paste; and / or the high thermal conductivity metal is copper; and / or the set thickness is 100 μm~200 μm.

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