Through hole resistor de-embedding structure and through hole resistor detection method

Abstract

The invention provides a through-hole resistor de-embedding structure and a through-hole resistor detection method, and the through-hole resistor de-embedding structure comprises a through-hole detection structure which comprises a first lower metal surface layer, a through-hole metal layer and a first upper metal surface layer which are sequentially stacked; the lower metal surface test structure comprises a second lower metal surface layer and is connected with a second lower metal surface test bonding pad through a second lower metal surface test arm; the upper metal surface testing structure comprises a second upper metal surface layer and is connected with a second upper metal surface testing bonding pad through a second upper metal surface testing arm; and the test arm test structure comprises a third metal surface test arm and a third metal surface test bonding pad which are connected with each other. According to the invention, the resistance of the test arm and the test pad can be calculated and removed, so that the detection precision of the through hole resistance is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of integrated circuit manufacturing, and in particular relates to a through-hole resistance de-embedding structure and a through-hole resistance detection method. Background Art

[0002] In integrated circuits, by forming wiring and contact holes in one step, tighter wiring spacing can be achieved, which helps to improve the integration and performance of the chip. Integrated circuits usually contain millions to more than 100 million through-holes. The failure of any through-hole may cause the function of the integrated circuit to fail to meet expectations. Therefore, it is necessary to test the through-hole resistance to determine whether it is qualified.

[0003] At present, there are two main methods for through-hole resistance detection: The first method is to prepare a through-hole chain including through-holes and interconnects; test the surface resistance of the interconnects and the resistance of the through-hole chain, then calculate the resistance of the interconnects, and then calculate the resistance of the through-holes. When this method tests the surface resistance of semiconductor materials, the contact resistance of the test pad is relatively small compared to the resistance of semiconductor materials, so the impact of the contact resistance on the results is not considered when calculating the surface resistance. However, in the back-end process of the logic circuit, the width of the copper interconnect is tens of nm, so it is necessary to lead out the test arm and test pad to test and calculate the surface resistance and through-hole resistance. Due to the low resistance of the copper wire, the test pad resistance has a serious impact on the surface resistance and through-hole resistance test results.

[0004] The second method is to prepare multiple through-hole chain structures with different through-hole numbers and interconnects; test the resistance of each through-hole chain structure. Then draw a curve between the resistance and the inverse of the number of through-holes. Fitting slope R 0 is the resistance of the through-hole chain structure with a through-hole number of 1, and the through-hole resistance is further calculated. The through-hole chain structure with different through-hole numbers obtained by this scheme has a large fitting data error when the through-hole resistance is low and the interconnection line resistance is large, and the test pad contact resistance is not removed when calculating the interconnection line resistance. Summary of the invention

[0005] The technical problem to be solved by the present invention is to provide a through-hole resistance de-embedding structure and a through-hole resistance detection method, which can improve the detection accuracy of the through-hole resistance.

[0006] The technical solution adopted by the present invention to solve the above technical problems is: In a first aspect, the present invention provides a through-hole resistor de-embedding structure, comprising: A through-hole detection structure comprises a first lower metal surface layer, a through-hole metal layer and a first upper metal surface layer stacked in sequence; wherein the first lower metal surface layer is connected to a first lower metal surface test pad via a first lower metal surface test arm, and the first upper metal surface layer is connected to a first upper metal surface test pad via a first upper metal surface test arm; A lower metal surface test structure, comprising a second lower metal surface layer, the second lower metal surface layer being connected to a second lower metal surface test pad via a second lower metal surface test arm; An upper metal surface test structure includes a second upper metal surface layer, and the second upper metal surface layer is connected to a second upper metal surface test pad through a second upper metal surface test arm; A test arm test structure, comprising a third metal surface test arm and a third metal surface test pad connected to each other; Among them, the structure and size of the first and second lower metal surface layers are the same, the structure and size of the first and second upper metal surface layers are the same, the structure and size of the first upper, first lower, second lower, second upper and third metal surface test arms are the same, and the structure and size of the first upper, first lower, second lower, second upper and third metal surface test pads are the same.

[0007] According to the above scheme, the formation process of the first upper, first lower, second lower, second upper, and third metal surface test arms is the same; the formation process of the first upper, first lower, second lower, second upper, and third metal surface test pads is the same.

[0008] According to the above solution, the first lower metal surface layer and the second lower metal surface layer are formed on the same substrate by the same process; the first upper metal surface layer and the second upper metal surface layer are formed on the same layer by the same process.

[0009] According to the above solution, the substrate is an insulating silicon substrate or a stacked structure with an insulating layer on the upper surface.

[0010] According to the above scheme, the through-hole metal layer includes an insulating dielectric layer and a plurality of through-hole metals of equal size in the insulating dielectric layer; the first lower metal surface layer and the first upper metal surface layer are connected through the through-hole metals.

[0011] According to the above scheme, the number of the second lower metal surface test arms, the second upper metal surface test arms and the third metal surface test arms is the same, which is 4; the number of the first lower metal surface test arms is 2, and the number of the first upper metal surface test arms is 2.

[0012] As a second aspect of the present invention, the present invention also provides a through-hole resistance detection method using the through-hole resistance de-embedding structure. Adopting a through hole detection structure, detecting the total resistance value of the first upper metal surface layer, the through hole metal layer, the first lower metal surface, the first upper metal surface test arm, the first upper metal surface test pad, the first lower metal surface test arm and the first lower metal surface test pad; A lower metal surface test structure is used to detect the total resistance value of the second lower metal surface layer, the second lower metal surface test arm and the second lower metal surface test pad; An upper metal surface test structure is used to detect the total resistance value of the second upper metal surface layer, the second upper metal surface test arm and the second upper metal surface test pad; Using a test arm test structure to detect the total resistance value of the third metal surface test arm and the third metal surface test pad; Based on the fact that the resistance values ​​of the first and second upper metal surface layers are the same, the resistance values ​​of the first and second lower metal surface layers are the same, the resistance values ​​of the first upper, first lower, second lower, second upper and third metal surface test arms are the same, and the resistance values ​​of the first upper, first lower, second lower, second upper and third metal surface test pads are the same, the resistance value of the through-hole metal layer is calculated using the above-detected resistance values.

[0013] According to the above method, the calculation formula of the resistance value R of the through-hole metal layer is: R=R1-R2-R3+R4; Among them, R1 is the total resistance value of the first upper metal surface layer, the through-hole metal layer, the first lower metal surface, two first upper metal surface test arms, two first upper metal surface test pads, two first lower metal surface test arms and two first lower metal surface test pads, R2 is the total resistance value of the second lower metal surface layer, four second lower metal surface test arms and four second lower metal surface test pads, R3 is the total resistance value of the second upper metal surface layer, four second upper metal surface test arms and four second upper metal surface test pads, and R4 is the total resistance value of four third metal surface test arms and four third metal surface test pads.

[0014] According to the above method, after the resistance value of the through-hole metal layer is obtained, the average resistance value of each through-hole metal is obtained according to the number of through-hole metals in the through-hole metal layer.

[0015] According to the above method, the resistance value is detected by the Van der Pauw method; each total resistance value is tested at least twice to calculate the average value.

[0016] The beneficial effects of the present invention are: 1. Design a set of through-hole resistance de-embedding structures, and use the resistance relationship between different structures to add and subtract, so as to obtain the through-hole resistance value. The unexpected effect is that the resistance of the test arm and the test pad can be calculated and removed, thereby improving the detection accuracy of the through-hole resistance, and the calculation method is simple.

[0017] 2. The parts corresponding to the same resistance value in the through-hole detection structure, the lower metal surface test structure, the upper metal surface test structure and the test arm test structure are formed in the same process, eliminating the resistance error caused by the process batch and further improving the calculation accuracy of the through-hole resistance. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a structural schematic diagram of a through-hole detection structure according to an embodiment of the present invention.

[0019] Figure 2 yes Figure 1 Partial cross-sectional view.

[0020] Figure 3 It is a structural schematic diagram of a metal surface test structure according to an embodiment of the present invention.

[0021] Figure 4 It is a structural schematic diagram of a metal surface test structure according to an embodiment of the present invention.

[0022] Figure 5 It is a structural schematic diagram of a test arm test structure according to an embodiment of the present invention.

[0023] Figure 6 It is a method flow chart of an embodiment of the present invention.

[0024] In the figure: 1010 - first upper metal surface layer, 1011 - first upper metal surface test pad, 1012 - first upper metal surface test arm; 1020 - through-hole metal layer, 1021 - insulating dielectric layer; 1030 - first lower metal surface layer, 1031 - first lower metal surface test pad, 1032 - first lower metal surface test arm; 1040-Substrate; 2010-second upper metal surface layer, 2011-second upper metal surface test pad, 2012-second upper metal surface test arm; 3010 - second lower metal surface layer, 3011 - second lower metal surface test pad, 3012 - second lower metal surface test arm; 4011 - third metal surface test pad, 4012 - third metal surface test arm. DETAILED DESCRIPTION

[0025] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0026] It should be noted that the illustrations provided in the embodiments of the present invention are only used to illustrate the basic concept of the present invention in a schematic manner. Therefore, the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout type may also be more complicated.

[0027] In the present invention, it is also necessary to explain that, if the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. In addition, if the terms "first" and "second" appear, they are only used for description and distinction purposes, and cannot be understood as indicating or implying relative importance.

[0028] Glossary: Van De Pauw method: Van De PauW, a technique for measuring resistivity and Hall coefficient.

[0029] As a first aspect of the present invention, the present invention provides a through-hole resistance de-embedding structure, including a through-hole detection structure for detecting the resistance value of an upper metal surface layer, a through-hole metal layer, a lower metal surface, a test arm, and a test pad; a lower metal surface test structure for detecting the resistance value of a lower metal surface layer, a test arm, and a test pad; an upper metal surface test structure for detecting the resistance value of an upper metal surface layer, a test arm, and a test pad; and a test arm test structure for detecting the resistance value of a test arm and a test pad. The present invention uses the Van De PauW method to test the resistance value of a through-hole resistance detection structure, a lower metal surface layer test structure, an upper metal surface test structure, and a test arm test structure, and is only used to detect the total resistance value of each test structure and calculate the through-hole resistance value, without solving equations and calculating the surface resistance value of a conductive film.

[0030] Specifically, the through-hole detection structure includes a first lower metal surface layer, a through-hole metal layer and a first upper metal surface layer stacked in sequence; wherein the first lower metal surface layer is connected to the first lower metal surface test pad through a first lower metal surface test arm, and the first upper metal surface layer is connected to the first upper metal surface test pad through a first upper metal surface test arm. The lower metal surface test structure includes a second lower metal surface layer, and the second lower metal surface layer is connected to the second lower metal surface test pad through a second lower metal surface test arm. The upper metal surface test structure includes a second upper metal surface layer, and the second upper metal surface layer is connected to the second upper metal surface test pad through a second upper metal surface test arm.

[0031] The test arm test structure includes a third metal surface test arm and a third metal surface test pad connected to each other.

[0032] Among them, the structure and size of the first and second lower metal surface layers are the same, the structure and size of the first and second upper metal surface layers are the same, the structure and size of the first upper, first lower, second lower, second upper and third metal surface test arms are the same, and the structure and size of the first upper, first lower, second lower, second upper and third metal surface test pads are the same.

[0033] As a second aspect of the present invention, the present invention also provides a through-hole resistance detection method using the through-hole resistance de-embedding structure, such as Figure 6 As shown, the specific steps include: S1, using a through-hole detection structure to detect the total resistance value R1 of the first upper metal surface layer, the through-hole metal layer, the first lower metal surface, the first upper metal surface test arm, the first upper metal surface test pad, the first lower metal surface test arm and the first lower metal surface test pad; S2, using the lower metal surface test structure to detect the total resistance value R2 of the second lower metal surface layer, the second lower metal surface test arm and the second lower metal surface test pad; S3, using the upper metal surface test structure to detect the total resistance value R3 of the second upper metal surface layer, the second upper metal surface test arm, and the second upper metal surface test pad; S4, using a test arm test structure to detect a total resistance value R4 of the third metal surface test arm and the third metal surface test pad; S5. Based on the fact that the resistance values ​​of the first and second upper metal surface layers are the same, the resistance values ​​of the first and second lower metal surface layers are the same, the resistance values ​​of the first upper, first lower, second lower, second upper and third metal surface test arms are the same, and the resistance values ​​of the first upper, first lower, second lower, second upper and third metal surface test pads are the same, the resistance values ​​of the through-hole metal layer are calculated using the above-detected resistance values, and then based on the number of through-hole metals, the average resistance value Rv of each through-hole metal is obtained, that is: Rv=(R1-R2-R3+R4) / N, where N is the number of through holes.

[0034] The order of S1-S4 can be interchanged arbitrarily.

[0035] The present invention uses a de-embedding method to calculate average values ​​of multiple through-hole resistances, thereby solving the problem of large through-hole resistance test errors.

[0036] The present invention is described below with reference to a specific embodiment.

[0037] The through hole detection structure is as follows Figure 1 and Figure 2As shown, it includes a first lower metal surface layer 1030, a through-hole metal layer 1020 and a first upper metal surface layer 1010 sequentially stacked on a substrate 1040. The first lower metal surface layer 1030 leads to a first lower metal surface test arm 1032 and a first lower metal surface test pad 1031, and the first upper metal surface layer 1010 leads to a first upper metal surface test arm 1012 and a first upper metal surface test pad 1011.

[0038] The number and setting positions of the test arms and test pads are set according to the test method. The Vanderbilt method is adopted in this embodiment, so two test arms and test pads are respectively led out from the first lower metal surface layer 1030 and the first upper metal surface layer 1010, for a total of four test arms and test pads.

[0039] The through-hole metal layer 1020 includes a plurality of through-hole metals of approximately equal size, and the first lower metal surface layer 1030 and the first upper metal surface layer 1010 are connected through the through-hole metal. In this embodiment, the material of the through-hole metal is Cu, Au or Ti / Au alloy, and the metal thickness is 120-180nm. In this embodiment, the through-hole metal is arranged in a 6·6 matrix, and other quantities and arrangements, such as 4·4, can also be selected according to actual conditions such as test requirements and sensitivity. In the through-hole metal layer 1020, other places except the through-hole metal are filled with an insulating dielectric layer 1021, and the insulating dielectric layer 1021 is Si3N4 or SiO2.

[0040] The through-hole detection structure in this embodiment is obtained by adopting a conventional Logic IC BEOL process, which will not be repeated here.

[0041] The lower metal surface test structure is as follows Figure 4 As shown, it includes a second lower metal surface layer 3010, a second lower metal surface test arm 3012, and a second lower metal surface test pad 3011, which have the same structural dimensions and formation process as the first lower metal surface layer, the first lower metal surface test arm, and the first lower metal surface test pad. In order to simplify the process and time, and reduce the error caused by the process, the lower metal surface test structure and the first lower metal surface layer 1030 of the through-hole detection structure can be formed simultaneously on the same substrate under the same process.

[0042] The upper metal surface test structure is as follows Figure 3 As shown, it includes a second upper metal surface layer 2010, a second upper metal surface test arm 2012, and a second upper metal surface test pad 2011, which have the same structural dimensions and formation process as the first upper metal surface layer, the first upper metal surface test arm, and the first upper metal surface test pad. Similarly, the upper metal surface test structure and the first upper metal surface layer 1010 of the through-hole detection structure can be formed simultaneously in the same layer under the same process.

[0043] The test arm test structure is as follows Figure 5 As shown, it includes the third metal surface test arm 4012 and the third metal surface test pad 4011 that are interconnected. Similarly, the test arm test structure and the first lower metal surface layer 1030 of the through hole detection structure can be formed on the same substrate at the same time under the same process, or can be formed on the same layer at the same time under the same process with the first upper metal surface layer 1010 of the through hole detection structure. Because the resistance of the test arm and the test pad itself is very small, the test arm test structure in the present embodiment connects 4 test arms together for detection, which can improve the detection accuracy. Of course, it is also possible to divide the test arm test structure into 2 or more than 2 according to actual conditions, respectively detect the resistance value of a test arm and a test pad, and then add up to obtain the total resistance value of the test arm test structure. It is also possible to form multiple test arms and test pads, and convert after detecting the total resistance value of multiple test arms and test pads to obtain the total resistance value of 4 test arms and 4 test pads.

[0044] For the convenience of calculation, the structure, shape, size, thickness and process of the test arms and test pads in the through-hole detection structure, the lower metal surface test structure, the upper metal surface test structure and the test arm test structure are the same. That is, the structure, shape, size, thickness and process of the first upper metal surface test pad 1011, the first lower metal surface test pad 1031, the second upper metal surface test pad 2011, the second lower metal surface test pad 3011 and the third metal surface test pad 4011 are the same; the structure, shape, size, thickness and process of the first upper metal surface test arm 1012, the first lower metal surface test arm 1032, the second upper metal surface test pad 2012, the second lower metal surface test arm 3012 and the third metal surface test arm 4012 are the same.

[0045] Since the above test structure needs to be formed on an insulating substrate, a substrate is required, and the substrate is an insulating silicon substrate or a stacked structure with an insulating layer on the upper surface. However, the substrate itself does not participate in the test and calculation of the resistance, so there is no limitation on it.

[0046] To facilitate the preparation of the structure, in this embodiment, the first upper metal surface layer 1010, the first lower metal surface layer 1030, the second upper metal surface layer 2010 and the second lower metal surface layer 3010 are made of metal layers with completely the same material, shape, size and thickness.

[0047] Furthermore, in order to further ensure accuracy and reduce errors, all upper metal surface layers are completed in the same batch process, and all lower metal surface layers are completed in the same batch process. That is, when forming the first lower metal surface layer 1030, the first lower metal surface test pad 1031 and the first lower metal surface test arm 1032, the second lower metal surface layer 3010, the second lower metal surface test pad 3011, the second lower metal surface test arm 3012, the third metal surface test pad 4011 and the third metal surface test arm 4012 are simultaneously formed on the substrate 1040. When forming the first upper metal surface layer 1010, the first upper metal surface test pad 1011 and the first upper metal surface test arm 1012, the second upper metal surface layer 2010, the second upper metal surface test pad 2011 and the second upper metal surface test arm 2012 are synchronously formed. Of course, the third metal surface test pad 4011 and the third metal surface test arm 4012 may also be formed simultaneously when the first upper metal surface layer 1010 , the first upper metal surface test pad 1011 and the first upper metal surface test arm 1012 are formed.

[0048] The following takes the through-hole detection structure as an example to illustrate the specific steps of resistance detection.

[0049] Using the Van der Pauw method, the two first upper metal surface test pads 1011 and the two first lower metal surface test pads 1031 correspond to a total of four test modules SMU1-SMU4. A variable current of -10mA to 10mA is applied to the two first lower metal surface test pads 1031, and the voltage value is detected at the two first upper metal surface test pads 1011, and then the first detection resistance value of the through-hole detection structure is calculated. A variable current of -10mA to 10mA is applied to the two first upper metal surface test pads 1011, and the voltage value is detected at the two first lower metal surface test pads 1031, and then the second detection resistance value of the through-hole detection structure is calculated. Then, a variable current of -10 mA to 10 mA is applied to one first lower metal surface test pad 1031 and one first upper metal surface test pad 1011, and a voltage value is detected at another first lower metal surface test pad 1031 and another first upper metal surface test pad 1011, and then the third detection resistance value of the through-hole detection structure is calculated. Then, the detection is exchanged to obtain the fourth detection resistance value of the through-hole detection structure. Finally, the total resistance value R1 of the through-hole detection structure (including the upper and lower metal surface layers, through-hole metal, and four test arms and pads) is obtained, which is the average value of the four detection resistance values.

[0050] Using the same idea as above, we can obtain the total resistance value R2 of the lower metal surface layer, the test arm and the test pad, the total resistance value R3 of the upper metal surface layer, the test arm and the test pad, and the total resistance value R4 of the test arm and the test pad. Finally, according to the number N of through-hole metals, we can obtain the average resistance value Rv of each through-hole metal.

[0051] In this embodiment, the total resistance value R2 of the lower metal surface layer, the test arm and the test pad is: the total resistance value of the second lower metal surface layer, the second lower metal surface test arm and the second lower metal surface test pad. The total resistance value R3 of the upper metal surface layer, the test arm and the test pad is: the total resistance value of the second upper metal surface layer, the second upper metal surface test arm and the second upper metal surface test pad. The total resistance value R4 of the test arm and the test pad is: the total resistance value of the third upper metal surface test arm, the third upper metal surface test pad, the third lower metal surface test arm and the third lower metal surface test pad.

[0052] Since the structural dimensions and the process batches formed by the first and second upper metal surface layers are the same, it can be considered that the resistance values ​​of the first and second upper metal surface layers are the same. Similarly, the resistance values ​​of the first and second lower metal surface layers are the same. The resistance values ​​of the first upper, first lower, second lower, second upper and third metal surface test arms are the same, and the resistance values ​​of the first upper, first lower, second lower, second upper and third metal surface test pads are the same. Then, the calculation formula for the resistance value R of the through-hole metal layer can be obtained by simple mathematical addition and subtraction. The specific expression is as follows: R1= R 11 +R 13 +4R b +4R p +NR v ; R2=R 21 +4R b +4R p ; R3=R 31 +4R b +4R p ; R4=4R b +4R p ; R 11 = R 21 , R 13 = R 31 ; Then the through-hole resistance R=R1-R2-R3+R4 is obtained.

[0053] In the formula, R 11 is the resistance value of the first lower metal surface layer, R 13 is the resistance value of the first upper metal layer, R 21 is the resistance value of the second lower metal surface layer, R 31 is the resistance value of the second upper metal layer, R b is the resistance value of one test arm, R pis the resistance value of a test pad. According to the number of through-hole metals in the through-hole metal layer, N, the average resistance value of each through-hole metal is obtained as Rv=(R1-R2-R3+R4) / N. In this embodiment, N=6*6=36.

[0054] In summary, the present invention adopts a group of through-hole resistance de-embedding structures including a through-hole detection structure, a lower metal surface test structure, an upper metal surface test structure and a test arm test structure, and uses a de-embedding method to calculate the average value of multiple through-hole resistances. It has an unexpected effect that the resistance of the test arm and the test pad is calculated and removed, thereby improving the detection accuracy of the through-hole resistance and solving the error problem of the through-hole resistance test.

[0055] It should be pointed out that, according to the needs of implementation, the various steps / components described in this application can be split into more steps / components, and two or more steps / components or partial operations of steps / components can be combined into new steps / components to achieve the purpose of the present invention.

[0056] The order of execution of each step in the above embodiment does not mean the order of execution. The order of execution of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the present application.

[0057] It should be understood that those skilled in the art can make improvements or changes based on the above description, and all these improvements and changes should fall within the scope of protection of the appended claims of the present invention.

Claims

1. A through-hole resistor de-embedding structure, characterized in that: include: A through-hole detection structure comprises a first lower metal surface layer, a through-hole metal layer and a first upper metal surface layer stacked in sequence; wherein the first lower metal surface layer is connected to a first lower metal surface test pad via a first lower metal surface test arm, and the first upper metal surface layer is connected to a first upper metal surface test pad via a first upper metal surface test arm; A lower metal surface test structure, comprising a second lower metal surface layer, the second lower metal surface layer being connected to a second lower metal surface test pad via a second lower metal surface test arm; An upper metal surface test structure includes a second upper metal surface layer, and the second upper metal surface layer is connected to a second upper metal surface test pad through a second upper metal surface test arm; A test arm test structure, comprising a third metal surface test arm and a third metal surface test pad connected to each other; Among them, the structure and size of the first and second lower metal surface layers are the same, the structure and size of the first and second upper metal surface layers are the same, the structure and size of the first upper, first lower, second lower, second upper and third metal surface test arms are the same, and the structure and size of the first upper, first lower, second lower, second upper and third metal surface test pads are the same.

2. The through-hole resistor de-embedding structure according to claim 1, characterized in that: The first upper, first lower, second lower, second upper, and third metal surface test arms are formed by the same process; the first upper, first lower, second lower, second upper, and third metal surface test pads are formed by the same process.

3. The through-hole resistor de-embedding structure according to claim 1, characterized in that: The first lower metal surface layer and the second lower metal surface layer are formed on the same substrate by the same process; the first upper metal surface layer and the second upper metal surface layer are formed on the same layer by the same process.

4. The through-hole resistor de-embedding structure according to claim 3, characterized in that: The substrate is an insulating silicon substrate or a stacked structure with an insulating layer on the upper surface.

5. The through-hole resistor de-embedding structure according to claim 1, characterized in that: The through-hole metal layer includes an insulating dielectric layer and a plurality of through-hole metals of equal size in the insulating dielectric layer; the first lower metal surface layer and the first upper metal surface layer are connected through the through-hole metals.

6. The through-hole resistor de-embedding structure according to claim 1, characterized in that: The number of the second lower metal surface test arms, the second upper metal surface test arms and the third metal surface test arms is the same, which is 4; the number of the first lower metal surface test arms is 2, and the number of the first upper metal surface test arms is 2.

7. A method for detecting via resistance using the via resistance de-embedding structure according to any one of claims 1 to 6, characterized in that: Adopting a through hole detection structure, detecting the total resistance value of the first upper metal surface layer, the through hole metal layer, the first lower metal surface, the first upper metal surface test arm, the first upper metal surface test pad, the first lower metal surface test arm and the first lower metal surface test pad; A lower metal surface test structure is used to detect the total resistance value of the second lower metal surface layer, the second lower metal surface test arm and the second lower metal surface test pad; An upper metal surface test structure is used to detect the total resistance value of the second upper metal surface layer, the second upper metal surface test arm and the second upper metal surface test pad; Using a test arm test structure to detect the total resistance value of the third metal surface test arm and the third metal surface test pad; Based on the fact that the resistance values ​​of the first and second upper metal surface layers are the same, the resistance values ​​of the first and second lower metal surface layers are the same, the resistance values ​​of the first upper, first lower, second lower, second upper and third metal surface test arms are the same, and the resistance values ​​of the first upper, first lower, second lower, second upper and third metal surface test pads are the same, the resistance value of the through-hole metal layer is calculated using the above-detected resistance values.

8. The through-hole resistance detection method according to claim 7, characterized in that: The calculation formula of the resistance value R of the through-hole metal layer is: R=R1-R2-R3+R4; Among them, R1 is the total resistance value of the first upper metal surface layer, the through-hole metal layer, the first lower metal surface, two first upper metal surface test arms, two first upper metal surface test pads, two first lower metal surface test arms and two first lower metal surface test pads, R2 is the total resistance value of the second lower metal surface layer, four second lower metal surface test arms and four second lower metal surface test pads, R3 is the total resistance value of the second upper metal surface layer, four second upper metal surface test arms and four second upper metal surface test pads, and R4 is the total resistance value of four third metal surface test arms and four third metal surface test pads.

9. The through-hole resistance detection method according to claim 7, characterized in that: After the resistance value of the through-hole metal layer is obtained, the average resistance value of each through-hole metal is obtained according to the number of through-hole metals in the through-hole metal layer.

10. The through-hole resistance detection method according to claim 7, characterized in that: The resistance values ​​were tested using the Van der Pauw method; each total resistance value was tested at least twice and the average value was calculated.

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