Dual-band high-efficiency active integrated antenna

Abstract

A dual-band high-efficiency active integrated antenna disclosed by the present invention comprises a first surface structure, a first dielectric substrate, a second surface structure, a second dielectric substrate and a third surface structure, the first surface structure is located on the upper surface of the first dielectric substrate, the second surface structure is located on the upper edge surface of the second dielectric substrate, and the third surface structure is located on the lower surface of the second dielectric substrate. The third surface structure is located on the lower surface of the second dielectric substrate, and the first surface structure comprises a first ring gap and a second ring gap; the second surface structure comprises a double-frequency input matching circuit, a stabilizing circuit, a transistor, a first capacitor and a feed circuit which are connected in sequence, and further comprises a first biasing circuit and a second biasing circuit; the third surface structure comprises a U-shaped groove and a rectangular groove. According to the invention, the power loss of the system is reduced, the overall size is reduced, and the dual-band requirement is met. The method can be widely applied to the field of wireless communication.

Description

Technical Field

[0001] The present invention relates to the field of wireless communications, and in particular to a dual-band high-efficiency active integrated antenna. Background Art

[0002] With the development of wireless communication technology, compact and efficient active transmitting antennas are in great need today. Active antenna technology (AIA) with miniaturized front-end is now used in many wireless systems such as radar, wireless satellite communications, etc. How to reduce system power loss and overall size while improving communication quality has become a research hotspot today.

[0003] The traditional method is to design and connect the high-efficiency power amplifier (PA) and antenna independently, so matching networks and harmonic tuning networks need to be added; these passive networks not only take up additional circuit area, but also increase the insertion loss of the AIA, thus affecting the total output power and efficiency. In addition, in order to meet the needs of high-speed communication between devices, modern mobile communication systems need to have more operating frequency bands to ensure reliable and efficient communication. The power amplifier is an important RF device, so multi-band power amplifiers have important engineering application value. Summary of the invention

[0004] In view of this, in order to solve the technical problem that the existing integrated antenna cannot simultaneously meet the system power loss, overall antenna size and dual-band requirements required by the scene, the present invention proposes a dual-band high-efficiency active integrated antenna, which includes, from top to bottom, a first surface structure, a first dielectric substrate, a second surface structure, a second dielectric substrate and a third surface structure, wherein:

[0005] The first surface structure is a double-circular gap structure;

[0006] The second surface structure includes a dual-frequency input matching circuit, a first bias circuit, a stabilization circuit, a transistor, a second bias circuit, a first capacitor and a feeding circuit connected in sequence;

[0007] The third surface structure includes a U-shaped groove and a rectangular groove;

[0008] The second surface structure, the second dielectric substrate and the third surface structure are also penetrated through the first metal via hole, the second metal via hole and the non-metal hole groove.

[0009] Based on the above structure, the dual-band high-efficiency active integrated antenna is specifically:

[0010] First, the RF input signal passes through the dual-frequency input matching network, and then is transmitted to the transistor through the stabilization circuit. After being amplified by the transistor, it enters the feeding circuit; the U-shaped groove and the rectangular groove in the third surface structure are used to control the second harmonic of the dual-frequency signal respectively; finally, the dual-frequency signal is transmitted to the first surface structure by electromagnetic coupling feeding, and the dual-ring structure is used to amplify the dual-frequency signal and radiate it directionally into space.

[0011] In addition, the first bias circuit and the second bias circuit provide stable DC bias voltage and current for the transistor, and prevent AC signals from flowing into the DC bias circuit, and can also protect the circuit from damaging the transistor due to excessive current or voltage or self-excited oscillation.

[0012] Based on the above scheme, the present invention provides a dual-band high-efficiency active integrated antenna, which realizes the dual-band function by using the dual-band input matching network and the dual-ring slot structure, so that it can be applied to more application scenarios; at the same time, the dual-band fundamental impedance is matched respectively by adjusting the size of the dual-ring slot, and the U-shaped slot and the rectangular slot in the third surface are used to control the second harmonic of the dual-frequency signal respectively, so as to realize the control of the voltage and current waveforms, and the functions of output matching and second harmonic control are integrated in the antenna, while reducing unnecessary insertion loss, the size of the circuit is greatly reduced, making the structure more compact, and having higher efficiency and EIRP at both frequency points; and the structure of the double-layer dielectric substrate and the electromagnetic coupling feeding method are used to realize the directional radiation of the dual-band signal, so that it has a higher output gain in a specific direction. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a structural schematic diagram of a dual-band high-efficiency active integrated antenna provided by the present invention;

[0014] Figure 2 It is a schematic diagram of splitting three surfaces of a dual-band high-efficiency active integrated antenna provided by the present invention;

[0015] Figure 3 It is a schematic diagram of the principle of the second surface structure of a dual-band high-efficiency active integrated antenna provided by the present invention;

[0016] Figure 4 is a radiation pattern of an antenna unit provided by an embodiment of the present invention;

[0017] Figure 5 is an efficiency diagram of an active antenna provided by an embodiment of the present invention;

[0018] Figure 6 It is an EIRP diagram of the active antenna provided by an embodiment of the present invention.

[0019] Figure numerals: 1, first surface structure; 2, second surface structure; 3, third surface structure; M1, first dielectric substrate; M2, second dielectric substrate; 11, first annular gap; 12, second annular gap; C1, first capacitor; C2, second capacitor; C3, third capacitor; C4, fourth capacitor; R1, first resistor; TL1, first microstrip line; TL2, second microstrip line; TL3, third microstrip line; TL4, fourth microstrip line; TL5, fifth microstrip line; TL6, sixth microstrip line; TL7, seventh microstrip line; TL8, eighth microstrip line; TL9, ninth microstrip line; TL10, tenth microstrip line; 21, dual-frequency input matching circuit; 22, first bias circuit; 23, stabilization circuit; 24, transistor; 25, second bias circuit; 26, feeding circuit; 31, U-shaped groove; 32, rectangular groove; 4, first metal via; 5, second metal via; 6, non-metal hole groove. DETAILED DESCRIPTION

[0020] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0021] It should be noted that, for the convenience of description, only the parts related to the relevant invention are shown in the drawings. In the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other.

[0022] It should be understood that the "system", "device", "unit" and / or "module" used in this application is a method for distinguishing different components, elements, parts, portions or assemblies at different levels. However, if other words can achieve the same purpose, the word can be replaced by other expressions.

[0023] As shown in this application and claims, unless the context clearly indicates an exception, the words "a", "an", "a kind" and / or "the" do not refer to the singular, but also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements. The elements defined by the sentence "includes a..." do not exclude the existence of other identical elements in the process, method, commodity or device that includes the elements.

[0024] In the description of the embodiments of the present application, "plurality" means two or more than two. The following terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features.

[0025] In addition, flow charts are used in the present application to illustrate the operations performed by the system according to the embodiments of the present application. It should be understood that the preceding or following operations are not necessarily performed accurately in order. On the contrary, the various steps may be processed in reverse order or simultaneously. At the same time, other operations may also be added to these processes, or a certain step or several steps of operations may be removed from these processes.

[0026] Reference Figure 1 , is a schematic structural diagram of an optional example of a dual-band high-efficiency active integrated antenna proposed by the present invention, comprising a first surface structure, a first dielectric substrate, a second surface structure, a second dielectric substrate and a third surface structure, wherein the first surface structure is located on the upper surface of the first dielectric substrate, the second surface structure is located on the upper side of the second dielectric substrate, and the third surface structure is located on the lower surface of the second dielectric substrate, wherein:

[0027] The material of the two-layer dielectric substrate is RO4003C, the thickness of each layer is 0.813mm, the size of the first layer is 5*5mm2, and the size of the second layer is 5*10mm2; the working frequency of the present invention is 2.45GHz and 5.5GHZ;

[0028] In one implementation method of an embodiment of the present invention, load pulling technology and source pulling technology are used to obtain the input impedance and output impedance that enable the present invention to have high efficiency or high power output. The obtained impedance value can be used as a design basis for the dual-frequency input matching circuit 21, as well as a design basis for the double annular gap structure in the first surface 1.

[0029] In some possible embodiments, such as Figure 2 As shown, the first surface structure 1 includes a first annular gap 11 and a second annular gap 12, the first annular gap 11 and the second annular gap 12 are concentric circles, and the radius of the second annular gap 12 is smaller than the first annular gap 11, and the center of the circle falls on the intersection of the two diagonals of the substrate;

[0030] The first circular gap 11 is mainly used as a 2.45 GHz radiation element. By adjusting its size, the port impedance of the antenna at 2.45 GHz can be close to the optimal load impedance obtained by load pulling. The second circular gap 12 is mainly used as a 5.5 GHz radiation element. By adjusting its size, the port impedance of the antenna at 5.5 GHz can be close to the optimal load impedance obtained by load pulling.

[0031] The third surface structure 3 includes a U-shaped groove 31 and a rectangular groove 32, and is located below the feeding circuit; the U-shaped groove 31 is used to control the second harmonic impedance of 2.45 GHz, and the rectangular groove 32 is used to control the second harmonic impedance of 5.5 GHz; so that the real part of the second harmonic impedance at two frequency points of one port of the feeding unit is 0, and the phase difference of the voltage and current waveforms is maintained at about 180°, ensuring high-efficiency output.

[0032] In some possible embodiments, such as Figure 3 As shown, the second surface structure 2 includes a dual-frequency input matching circuit 21, a first bias circuit 22, a stabilization circuit 23, a transistor 24, a second bias circuit 25, a first capacitor C1 and a feeding circuit 26, wherein:

[0033] The dual-frequency input matching circuit 21 includes a second capacitor C2, a first microstrip line TL1, a second microstrip line TL2, a third microstrip line TL3, a fourth microstrip line TL4, a fifth microstrip line TL5 and a sixth microstrip line TL6. The first port of the second capacitor C2, the first port of the first microstrip line TL1 and the first port of the second microstrip line TL2 are connected; the second port of the second microstrip line TL2, the first port of the third microstrip line TL3 and the first port of the fourth microstrip line TL4 are connected; the second port of the fourth microstrip line TL4, the first port of the fifth microstrip line TL5 and the first port of the sixth microstrip line TL6 are connected; the second port of the sixth microstrip line TL6 is connected to the first port of the first bias circuit 22.

[0034] The sixth microstrip line TL6 is part A, which is used to convert the impedance at two frequencies into a pair of conjugate impedances; the first microstrip line TL1, the second microstrip line TL2, the third microstrip line TL3, the fourth microstrip line TL4 and the fifth microstrip line TL5 are part B, which are used to simultaneously match the conjugate impedance to the port impedance of 50Ω. The first microstrip line TL1, the third microstrip line TL3 and the fifth microstrip line TL5 are open lines; the five microstrip lines in part B are connected in a shape resembling an inverted mountain.

[0035] The first bias circuit 22 includes a seventh microstrip line TL7 and a third capacitor C3. The first port of the seventh microstrip line TL7, the second port of the dual-frequency input matching circuit 21 and the first port of the stabilization circuit 23 are connected; the second port of the seventh microstrip line TL7, the first port of the third capacitor C3 and the first power port V gs The second port of the third capacitor C3 is connected to the first metal via 4.

[0036] The stabilization circuit 23 includes a fourth capacitor C4 and a first resistor R1, the first port of the fourth capacitor C4, the first port of the first resistor R1 and the second port of the dual-frequency input matching circuit 21 are connected; the second port of the fourth capacitor C4, the second port of the first resistor R1 and the gate of the transistor 24 are connected.

[0037] The second bias circuit 25 includes an eighth microstrip line TL8 and a fifth capacitor C5. The first port of the eighth microstrip line TL8, the drain of the transistor 24 and the first port of the first capacitor C1 are connected; the second port of the eighth microstrip line TL8, the first port of the fifth capacitor C5 and the second power supply port V ds The second port of the fifth capacitor C5 is connected to the second metal via 5.

[0038] The feeding circuit 26 includes a ninth microstrip line TL9 and a tenth microstrip line TL10. The first port of the ninth microstrip line TL9 is connected to the second port of the first capacitor C1. The second port of the ninth microstrip line TL9 is connected to the tenth microstrip line TL10. The feeding circuit 26 is used to couple the radio frequency signal to the first surface structure 1.

[0039] The DC bias voltage source is connected through the first power supply port V gs and the second power port V ds Providing a suitable static operating point for transistor 24, whose values ​​are respectively -2.8V and 28V, at which time the drain current is about 171mA, the static operating point of transistor 24 is in a deep AB state.

[0040] The capacitance of the second capacitor C2 and the first capacitor C1 are both 10 pf to ensure that the DC power acts on the transistor and does not flow out of the circuit from the second capacitor C2 to the first capacitor C1.

[0041] The first bias circuit 22 and the second bias circuit 25 use a quarter-wavelength microstrip line with a center frequency of 3.975 GHz. In addition, the parallel bypass capacitors used in the first bias circuit 22 and the second bias circuit 25 have a capacitance of 10 pF to prevent AC signals from flowing into the DC bias circuit and to protect the circuit from damaging the transistor due to excessive circuit size or self-excited oscillation.

[0042] The stabilization circuit 23 adopts an RC parallel structure to ensure that the amplifier maintains stable operation within the RF frequency range and prevents problems such as unstable oscillation, distortion and power loss. The stabilization circuit 23 adopted in the present invention is an RC parallel structure, in which the stabilization resistor R1 is 68Ω and the stabilization capacitor C5 is 7.2pF. The stabilization circuit 23 makes the K value of the amplification unit 2 greater than 1 at 2.45GHz and 5.5GHz respectively, meeting the stability requirements.

[0043] like Figure 4 As shown, the radiation pattern of a dual-band high-efficiency active integrated antenna at 2.45 GHz and 5.5 GHz; it can be seen that the antenna is a directional radiation antenna, and the positive half axis of the Z axis is the main radiation direction; the gain Gt is 5.04 dB at 2.45 GHz, and the gain Gt is 6.71 dB at 5.5 GHz.

[0044] like Figure 5 As shown, an efficiency diagram of a dual-band high-efficiency active integrated antenna; from the figure, it can be seen that the working efficiency at 2.45GHz is 74%, and the working efficiency at 5.5GHz is 59%; it has high working efficiency at both frequency points, achieving the goal of dual-band high efficiency.

[0045] like Figure 6 As shown in the figure, it is an EIRP diagram of a dual-band high-efficiency active integrated antenna. From the figure, it can be seen that the two frequency points obtain good EIRP when the input power is 30dBm. Among them, the highest EIRP is 45.22dBm when working at 2.45GHz, and the highest EIRP is 46.1dBm at 5.5GHz.

[0046] The above is a specific description of the preferred implementation of the present invention, but the invention is not limited to the embodiments. Those skilled in the art may make various equivalent modifications or substitutions without violating the spirit of the present invention. These equivalent modifications or substitutions are all included in the scope defined by the claims of this application.

Claims

1. A dual-band high-efficiency active integrated antenna, characterized in that: The invention comprises a first surface structure, a first dielectric substrate, a second surface structure, a second dielectric substrate and a third surface structure, wherein the first surface structure is located on the upper surface of the first dielectric substrate, the second surface structure is located on the upper side of the second dielectric substrate, and the third surface structure is located on the lower surface of the second dielectric substrate, wherein: The first surface structure includes a first annular gap and a second annular gap; The second surface structure includes a dual-frequency input matching circuit, a stabilization circuit, a transistor, a first capacitor and a feeding circuit connected in sequence; The third surface structure includes a U-shaped groove and a rectangular groove; The second surface structure, the second dielectric substrate and the third surface structure are penetrated through the first metal via, the second metal via and the non-metal slot.

2. A dual-band high-efficiency active integrated antenna according to claim 1, characterized in that: The first circular gap and the second circular gap are concentric circular rings, and the radius of the second circular gap is smaller than that of the first circular gap.

3. A dual-band high-efficiency active integrated antenna according to claim 1, characterized in that: The second surface structure further comprises a first bias circuit and a second bias circuit, wherein: The first port of the dual-frequency input matching circuit is connected to the signal input port; The second port of the dual-frequency input matching circuit, the first port of the first bias circuit and the first port of the stabilization circuit are connected; The second port of the stabilization circuit is connected to the gate of the transistor; The drain of the transistor, the first port of the second bias circuit and the first port of the first capacitor are connected; The second port of the first capacitor is connected to the feeding circuit.

4. A dual-band high-efficiency active integrated antenna according to claim 3, characterized in that: The dual-frequency input matching circuit includes a second capacitor, a first microstrip line, a second microstrip line, a third microstrip line, a fourth microstrip line, a fifth microstrip line and a sixth microstrip line, wherein: The first port of the second capacitor, the first port of the first microstrip line and the first port of the second microstrip line are connected; The second port of the second microstrip line, the first port of the third microstrip line and the first port of the fourth microstrip line are connected; The second port of the fourth microstrip line, the first port of the fifth microstrip line and the first port of the sixth microstrip line are connected; The second port of the sixth microstrip line is connected to the first port of the first bias circuit.

5. The dual-band high-efficiency active integrated antenna according to claim 3, characterized in that: The first bias circuit includes a seventh microstrip line and a third capacitor, wherein: The first port of the seventh microstrip line, the second port of the dual-frequency input matching circuit and the first port of the stabilization circuit are connected; The second port of the seventh microstrip line, the first port of the third capacitor and the DC input are connected; The second port of the third capacitor is connected to the first metal via.

6. A dual-band high-efficiency active integrated antenna according to claim 3, characterized in that: The stabilization circuit comprises a fourth capacitor and a first resistor, wherein: The first port of the fourth capacitor, the first port of the first resistor and the second port of the dual-frequency input matching circuit are connected; The second port of the fourth capacitor, the second port of the first resistor and the gate of the transistor are connected.

7. A dual-band high-efficiency active integrated antenna according to claim 3, characterized in that: The second bias circuit comprises an eighth microstrip line and a fifth capacitor, wherein: The first port of the eighth microstrip line, the drain of the transistor and the first port of the first capacitor are connected; The second port of the eighth microstrip line, the first port of the fifth capacitor and the DC input are connected; The second port of the fifth capacitor is connected to the second metal via.

8. The dual-band high-efficiency active integrated antenna according to claim 3, characterized in that: The feeding circuit includes a ninth microstrip line and a tenth microstrip line, wherein: The first port of the ninth microstrip line is connected to the second port of the first capacitor; The second port of the ninth microstrip line is connected to the tenth microstrip line.

9. The dual-band high-efficiency active integrated antenna according to claim 3, characterized in that: The third surface structure is located below the feeding circuit.

10. The dual-band high-efficiency active integrated antenna according to claim 1, characterized in that: The working process is as follows: The RF input signal passes through the dual-frequency input matching network, the stabilization circuit and the transistor in sequence, and after being amplified by the transistor, enters the feeding circuit; The U-shaped groove and the rectangular groove in the third surface structure are used to control the second harmonic of the dual-frequency signal respectively; The dual-frequency signal is transmitted to the first surface structure by means of electromagnetic coupling feeding, and the dual-frequency signal is amplified and directionally radiated into space through the double-ring structure.

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