Laser light source

Abstract

The invention provides a laser light source which is difficult to generate position offset between a laser diode chip and a lens. A laser light source includes: a laser diode chip having a light emitting layer, a substrate supporting the light emitting layer, and an emission end surface emitting laser light generated by the light emitting layer; an auxiliary holder having a main plane to which the laser diode chip is fixed, and a pair of lens support parts positioned on both sides of the emission end surface of the laser diode chip; a lens joined to the end surfaces of the pair of lens support parts; and a semiconductor laser package accommodating the light emitting layer and the auxiliary holder, in which the laser diode chip is fixed to the auxiliary holder in a state in which the light emitting layer is closer to the auxiliary holder than the substrate, the emission end surface of the laser diode chip protrudes more than the edge of the main plane, and the emission end surface of the laser diode chip protrudes more than the edge of the main plane. The end surfaces of the pair of lens support parts protrude more than the first end surface of the laser diode chip.

Description

[0001] This application is a divisional application of an application with a filing date of September 8, 2020, application number 202080089075.5, and invention name “Laser Light Source”. Technical Field

[0002] The invention relates to a laser light source. Background Art

[0003] Laser light sources are used for various purposes such as processing, projectors, and lighting fixtures. A typical example of such a laser light source includes a laser diode chip, an auxiliary bracket supporting the laser diode chip, and a collimating lens that reduces the divergence angle of the laser emitted from the laser diode chip (for example, Patent Document 1). In the case where the laser diode chip, the auxiliary bracket, and the collimating lens and other lenses are housed in a semiconductor laser package, the laser can be collimated by a small lens before it diverges significantly. On the other hand, due to a slight positional offset between the laser diode chip and the lens, the direction of the optical axis of the laser emitted from the laser light source to the outside may be greatly offset.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2000-98190

[0005] There is a demand for a laser light source in which positional deviation between a laser diode chip and a lens is unlikely to occur. Summary of the invention

[0006] In one embodiment, the laser light source of the present invention comprises: an end-face emission type laser diode chip, which comprises: a semiconductor stacked structure including a light-emitting layer, a substrate supporting the semiconductor stacked structure, a first end face for emitting laser light generated by the light-emitting layer, and a second end face on the side opposite to the first end face, wherein the resonator length is defined by the distance from the first end face to the second end face; an auxiliary support, which comprises: a main plane to which the laser diode chip is fixed, a pair of lens support parts located on both sides of the first end face of the laser diode chip, and a back surface located on the opposite side of the main plane; a lens bonded to the end faces of the pair of lens support parts; and a semiconductor laser package, which accommodates the laser diode chip, the lens and the auxiliary support, wherein the laser diode chip is fixed to the auxiliary support in a state in which the light-emitting layer is closer to the auxiliary support than the substrate of the laser diode chip, the first end face of the laser diode chip protrudes further in the direction of the resonator length than the edge of the main plane, and the end faces of the pair of lens support parts protrude further in the direction of the resonator length than the first end face of the laser diode chip.

[0007] According to the present invention, it is possible to realize a laser light source in which positional deviation between a laser diode chip and a lens is unlikely to occur. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1A It is a perspective view schematically showing a configuration example of the laser light source 100 according to the first embodiment of the present invention.

[0009] Figure 1B It is a schematic representation Figure 1A FIG. 1 is a diagram of a planar structure of a laser light source 100 .

[0010] Figure 2A It means from Figure 1A The laser light source 100 is a more detailed perspective view of the structure of the semiconductor laser package 40 and the pair of lead terminals 50 omitted.

[0011] Figure 2B It is a schematic representation Figure 2A A top view of the laser light source 100.

[0012] Figure 2C is with Figure 2B A cross-sectional view of the structure along the IIC-IIC line parallel to the YZ plane.

[0013] Figure 3A It is a perspective view schematically showing a configuration example of a laser light source 110 according to Modification 1 of Embodiment 1 of the present invention.

[0014] Figure 3B It is a schematic representation Figure 3A A top view of the laser light source 110.

[0015] Figure 3C is with Figure 3B A cross-sectional view of the structure along line IIIC-IIIC parallel to the YZ plane.

[0016] Figure 4A It is a perspective view schematically showing a configuration example of a laser light source 120 according to a second modification of the first embodiment of the present invention.

[0017] Figure 4B It is a schematic representation Figure 4A A top view of the laser light source 120.

[0018] Figure 4C is with Figure 4B A cross-sectional view of the structure along the IVC-IVC line parallel to the YZ plane.

[0019] Figure 5A It is a perspective view schematically showing a configuration example of a laser light source 130 according to a third modification of the first embodiment of the present invention.

[0020] Figure 5B It is a schematic representation Figure 5AA top view of the laser light source 130.

[0021] Figure 5C is with Figure 5B A cross-sectional view of the structure along the VC-VC line parallel to the YZ plane.

[0022] Fig. 6A It is a perspective view schematically showing a configuration example of a laser light source 140 according to a fourth modification of the first embodiment of the present invention.

[0023] Figure 6B It is a schematic representation Fig. 6A A top view of the laser light source 140.

[0024] Figure 6C is with Figure 6B A cross-sectional view of the structure along the VIC-VIC line parallel to the YZ plane.

[0025] Fig. 7A It is a perspective view schematically showing a configuration example of a laser light source 150 according to a fifth modification of the first embodiment of the present invention.

[0026] Figure 7B It is a schematic representation Fig. 7A A top view of the laser light source 150.

[0027] Figure 7C is with Figure 7B A cross-sectional view of the structure taken along line VIIC-VIIC parallel to the YZ plane.

[0028] Fig.7D is a schematic diagram showing the use of an open clamp 60 to Fig. 7A A stereoscopic view of a situation in which the collimating lens 30 in the laser light source 150 is engaged with the auxiliary bracket 20.

[0029] Fig. 8A It is a perspective view schematically showing a configuration example of a laser light source 200 according to Embodiment 2 of the present invention.

[0030] Figure 8B It is a schematic representation Fig. 8A A top view of the laser light source 200.

[0031] Figure 8C is with Figure 8B A cross-sectional view of the structure along the VIIIC-VIIIC line parallel to the YZ plane.

[0032] Fig.8D It is a schematic representation Fig. 8A A rear view of the laser light source 200.

[0033] Fig.9AIt is a perspective view schematically showing a configuration example of a laser light source 210 according to Modification 1 of Embodiment 2 of the present invention.

[0034] Fig. 9B It is a schematic representation Fig.9A A top view of the laser light source 210.

[0035] Fig. 9C is with Fig. 9B A cross-sectional view of the structure parallel to the IXC-IXC line on the YZ plane.

[0036] Fig.9D It is a schematic representation Fig.9A A rear view of the laser light source 210 is shown.

[0037] Fig. 10A It is a perspective view schematically showing a configuration example of a laser light source 220 according to a second modification of the second embodiment of the present invention.

[0038] Fig. 10B It is a schematic representation Fig. 10A A top view of the laser light source 220.

[0039] Fig. 10C is with Fig. 10B A cross-sectional view of the structure along the XC-XC line parallel to the YZ plane.

[0040] Fig. 10D It is a schematic representation Fig. 10A A stereoscopic view of the fourth auxiliary bracket portion 20p4 and the collimating lens 30. DETAILED DESCRIPTION

[0041] Hereinafter, a laser light source according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The same reference numerals in the drawings represent the same or equivalent parts.

[0042] In addition, the following is an illustration to embody the technical idea of ​​the present invention, and the present invention is not limited to the following. In addition, the description of the size, material, shape, relative configuration, etc. of the structural elements is not intended to limit the scope of the present invention to this, but is intended to be an illustration. For ease of understanding, the size, positional relationship, etc. of the components shown in the drawings are sometimes exaggerated.

[0043] (Implementation Method 1)

[0044] First, refer to Figure 1A as well as Figure 1B as well as Figure 2A to Figure 2C A basic configuration example of a laser light source according to Embodiment 1 of the present invention will be described.

[0045] Figure 1AIt is a perspective view schematically showing a configuration example of the laser light source 100 according to the first embodiment of the present invention. Figure 1B It is a schematic representation Figure 1A FIG. 1 is a diagram of a planar structure of a laser light source 100. The laser light source 100 of the present embodiment comprises: a laser diode chip 10, an auxiliary bracket 20 supporting the laser diode chip 10, a collimating lens 30 supported by the auxiliary bracket 20, and a semiconductor laser package 40 that accommodates the above elements or components. In addition, the laser light source 100 of the present embodiment comprises a pair of lead terminals 50 that penetrate the semiconductor laser package 40 and supply power to the laser diode chip 10. The semiconductor laser package 40 includes a cover body 40L, a base body 40b, and a light-transmitting window 40w. In the laser light source 100 of the present embodiment, the laser light emitted from the laser diode chip 10 and collimated by the collimating lens 30 is taken out to the outside through the light-transmitting window 40w.

[0046] exist Figure 1A In the present invention, for the sake of easy understanding, the cover 40L, the base 40b and the light-transmitting window 40w of the semiconductor laser package 40 are described as being separated, but they are actually joined. Figure 1B In FIG. 4 , description of the lid body 40L of the semiconductor laser package 40 is omitted.

[0047] In the drawings, for reference, mutually orthogonal X-axis, Y-axis and Z-axis are schematically shown. For ease of understanding, in the present invention, the side where the laser diode chip 10, the auxiliary bracket 20 and the collimating lens 30 are located in the base 40b is sometimes represented as "upper". This does not limit the direction of the laser light source 100 when used, and the direction of the laser light source 100 is arbitrary.

[0048] Figure 2A It means from Figure 1A The laser light source 100 is a more detailed perspective view omitting the structure of the semiconductor laser package 40 and the pair of lead terminals 50. Figure 2A The area surrounded by the dotted line in FIG. 1 shows an example of the detailed structure of the laser diode chip 10 arranged on the auxiliary mount 20. Figure 2A Although the auxiliary bracket 20 and the collimating lens 30 are described in a separated state, they are actually joined. Figure 2B It is a schematic representation Figure 2A A top view of the laser light source 100.

[0049] Figure 2C is with Figure 2B In the present invention, the auxiliary bracket 20 is often used as a reference, and the side where the collimating lens 30 is located is represented as the "front".

[0050] like Figure 2A As shown, the laser diode chip 10 is an end-emission type laser diode chip, and includes: a semiconductor stacked structure 10a including a first cladding layer 10C1, a second cladding layer 10C2, and a light-emitting layer 10L; a substrate 10b supporting the semiconductor stacked structure 10a; an emission end face 10e1 for emitting high-output laser light generated by the light-emitting layer 10L; and a rear end face 10e2 on the opposite side of the emission end face 10e1. The light-emitting layer 10L is located between the first cladding layer 10C1 and the second cladding layer 10C2. The laser diode chip 10 may include other layers such as a buffer layer and a contact layer. In the present invention, the "emission end face 10e1" is sometimes referred to as the "first end face 10e1", and the "rear end face 10e2" is sometimes referred to as the "second end face 10e2".

[0051] The laser diode chip 10 is fixed to the auxiliary support 20 in an inverted state in which the light emitting layer 10L is closer to the auxiliary support 20 than the substrate 10b. The total size of the semiconductor stacked structure 10a and the substrate 10b of the laser diode chip 10 in the Y direction is about 80μm. The total size of the substrate 10b and the first cladding layer 10C1 in the Y direction is larger than the size of the second cladding layer 10C2 in the Y direction. In the inverted state, the distance between the light emitting layer 10L and the auxiliary support 20 is about one tenth compared to the upright state in which the light emitting layer 10L is farther away from the auxiliary support 20 than the substrate 10b. Therefore, in the inverted state, even if a high-output laser is emitted from the light emitting layer 10L, the heat generated by the light emitting layer 10L can be efficiently transferred to the auxiliary support 20. The output of the laser in this embodiment is, for example, not less than 3W and not more than 50W.

[0052] The semiconductor stacked structure 10a may have, for example, a double heterostructure of energy levels forming a quantum well. The band gap of the light-emitting layer 10L is smaller than the band gaps of the first cladding layer 10C1 and the second cladding layer 10C2. In the present embodiment, the substrate 10b and the first cladding layer 10C1 on the substrate 10b may be formed of an n-type semiconductor, respectively. The light-emitting layer 10L may be formed of an intrinsic semiconductor, an n-type semiconductor or a p-type semiconductor, and the second cladding layer 10C2 on the light-emitting layer 10L may be formed of a p-type semiconductor. The n-type and p-type may also be opposite. By injecting current from the p-type cladding layer to the n-type cladding layer, an inversion distribution of carriers is generated in the light-emitting layer 10L, and light is stimulated to emit from the light-emitting layer 10L. The refractive index of the light-emitting layer 10L is designed to be higher than the refractive index of the first cladding layer 10C1 and the second cladding layer 10C2, and the light generated by the light-emitting layer 10L is confined in the light-emitting layer 10L by total reflection. The light emitting layer 10L functions as a resonator, and emits laser light from the emission end face 10e1 of the light emitting layer 10L. The resonator length of the light emitting layer 10L is defined by the distance from the emission end face 10e1 to the rear end face 10e2. The direction of the resonator length is parallel to the Z direction. The resonator length is, for example, 500 μm or more and 5000 μm or less. When the resonator length is long, the contact area between the laser diode chip 10 and the auxiliary bracket 20 can be enlarged, so that the heat generated by the light emitting layer 10L can be efficiently transferred to the auxiliary bracket 20.

[0053] The laser light emitted from the emission end surface 10e1 of the laser diode chip 10 rapidly diverges in the YZ plane and slowly diverges in the XZ plane as it propagates. The laser light spot has an elliptical shape in the far field with the Y direction as the major axis and the X direction as the minor axis in the XY plane when it is not collimated.

[0054] The laser diode chip 10 can emit a purple, blue, green or red laser in the visible region, or an infrared or ultraviolet laser. The peak wavelength of purple light emission is preferably in the range of 350 nm to 419 nm, more preferably in the range of 400 nm to 415 nm. The peak wavelength of blue light emission is preferably in the range of 420 nm to 494 nm, more preferably in the range of 440 nm to 475 nm. As a semiconductor laser element emitting purple or blue laser, a semiconductor laser element containing a nitride semiconductor can be cited. As a nitride semiconductor, for example, GaN, InGaN and AlGaN can be used. The peak wavelength of green light emission is preferably in the range of 495 nm to 570 nm, more preferably in the range of 510 nm to 550 nm. As a semiconductor laser element emitting green laser, a semiconductor laser element containing a nitride semiconductor can be cited. As a nitride semiconductor, for example, GaN, InGaN and AlGaN can be used. The peak wavelength of red light is preferably within the range of 605 nm to 750 nm, more preferably within the range of 610 nm to 700 nm. As semiconductor laser elements emitting red laser light, for example, semiconductor laser elements containing semiconductors of the InAlGaP series, GaInP series, GaAs series, and AlGaAs series can be cited. As semiconductor laser elements emitting red light, semiconductor laser elements having two or more waveguide regions can be used. Compared with semiconductor laser elements containing nitride semiconductors, semiconductor laser elements containing the above-mentioned semiconductors are more likely to be reduced in output due to heat. By increasing the waveguide region, heat can be dispersed and the output reduction of the semiconductor laser element can be reduced.

[0055] The auxiliary support 20 has a main plane 20s1 to which the laser diode chip 10 is fixed, a pair of lens support portions 20LS located on both sides of the emission end surface 10e1 of the laser diode chip 10, a back surface 20s2 located on the opposite side of the main plane 20s1, and a front end surface 20fe connecting the main plane 20s1 and the back surface 20s2. The main plane 20s1 and the front end surface 20fe define the edge 20ed of the main plane 20s1. Figure 2A In the example shown, the pair of lens support parts 20LS are a pair of protrusions located on both sides of the laser diode chip 10 and extending in the Z direction. The auxiliary bracket 20 has the following U-shaped shape extending in the Z direction at a position behind the front end face 20fe. The U-shaped shape is mirror-symmetrical with respect to a plane parallel to the YZ plane, and is formed by dividing a square cylinder extending in the Z direction by a plane parallel to the XZ plane. The end face 20se of the pair of lens support parts 20LS protrudes further in the resonator length direction than the emission end face 10e1 of the laser diode chip 10. The normal direction of the main plane 20s1 is parallel to the Y direction.

[0056] The distance in the Z direction between the end face 20se of the pair of lens support parts 20LS and the emission end face 10e1 of the laser diode chip 10 can be designed to be substantially equal to the focal length of the collimating lens 30. The distance in the Z direction between the end face 20se of the pair of lens support parts 20LS and the emission end face 10e1 of the laser diode chip 10 is, for example, greater than 50 μm and less than 100 μm. The dimension in the Y direction of the pair of lens support parts 20LS can be the same as the dimension in the Y direction of the collimating lens 30. The dimension in the Y direction of the pair of lens support parts 20LS can be larger than, equal to, or smaller than the dimension in the Y direction of the collimating lens 30. The dimension in the Y direction of the pair of lens support parts 20LS is, for example, greater than 100 μm and less than 500 μm.

[0057] The dimension of the auxiliary support 20 in the X direction is, for example, not less than 1 mm and not more than 3 mm, the dimension of the portion of the auxiliary support 20 other than the pair of lens support parts 20LS in the Y direction is, for example, not less than 100 μm and not more than 500 μm, and the dimension of the portion other than the pair of lens support parts 20LS in the Z direction is, for example, not less than 1 mm and not more than 6 mm. In the present invention, the upper limit of the dimension can be determined from the viewpoint of miniaturization of the laser light source 100.

[0058] In the auxiliary support 20, the emission end face 10e1 of the laser diode chip 10 protrudes further in the resonator length direction than the edge 20ed of the main plane 20s1. The distance between the emission end face 10e1 of the laser diode chip 10 and the edge 20ed of the main plane 20s1 in the Z direction is, for example, greater than 2 μm and less than 50 μm. With this configuration, even if the laser diode chip 10 and the main plane 20s1 of the auxiliary support 20 are fixed by a bonding material of an inorganic material such as gold tin in an inverted state, it is possible to suppress the bonding material from bulging toward the emission end face 10e1 of the light emitting layer 10L. In the laser light source disclosed in Patent Document 1, when the laser diode chip is configured in an inverted state, the bonding material bonding the laser diode chip to the auxiliary support may bulge toward the emission end face of the light emitting layer of the laser diode chip. As a result, the output of the laser emitted from the laser diode chip may be reduced. In the laser light source 100 of this embodiment, such a reduction in the output of the laser can be suppressed.

[0059] A part or the whole of the auxiliary support 20 can be formed of, for example, a ceramic including at least one selected from the group consisting of AlN, SiC, and alumina, and an alloy such as CuW. The auxiliary support 20 can be made, for example, by sintering ceramic powder. The thermal conductivity of the ceramic is, for example, 10 [W / m·K] or more and 500 [W / m·K] or less. In addition, in order to suppress deformation caused by heat applied when the laser diode chip 10 is fixed, the ceramic can have a low thermal expansion coefficient. The thermal expansion coefficient can be 2×10 -6 [1 / K] or more and 1×10 -5 [1 / K] or less. A metal film such as gold plating having a thickness of, for example, 0.5 μm or more and 10 μm or less may be formed on the main plane 20s1 and the back surface 20s2 of the auxiliary support 20. The metal film formed on the main plane 20s1 enables the laser diode chip 10 to be bonded to the main plane 20s1, for example, using gold tin. The metal film formed on the back surface 20s2 enables the auxiliary support 20 to be bonded to the bottom 40b1, for example, using gold tin.

[0060] The collimating lens 30 is a so-called FAC (Fast Axis Collimator) lens that collimates the components of the laser light emitted from the laser diode chip 10 that diverge greatly in the YZ plane. If necessary, a so-called SAC (Slow Axis Collimator) lens (not shown) that collimates the components of the laser light that diverge slightly in the XZ plane may be configured outside the laser light source 100. In the present invention, "collimation" includes not only making the laser light parallel, but also reducing the divergence angle of the laser light. In addition, other lenses such as a focusing lens may be used instead of the collimating lens 30 depending on the application.

[0061] The collimating lens 30 is a cylindrical lens based on a structure extending in the X direction. It has no curvature in the upper part of the X-axis direction, but has curvature in the Y direction. The direction in which the collimating lens 30 extends is perpendicular to both the normal direction of the main plane 20s1 of the auxiliary bracket 20 and the length direction of the resonator. The Y-direction dimensions of the collimating lens 30 and the pair of lens support parts 20LS are of the same degree, so when observed from the length direction of the resonator, it is easy to set the center of gravity of the collimating lens 30 to be located between the pair of lens support parts 20LS. Through this configuration relationship of the center of gravity of the collimating lens 30, the collimating lens 30 can be stably and accurately set on the auxiliary bracket 20.

[0062] In this embodiment, with the back surface 20s2 of the auxiliary bracket 20 as a reference, the height of the upper surface of the pair of lens support parts 20LS in the Y direction is approximately equal to the height of the upper surface of the collimating lens 30 in the Y direction. The position of the collimating lens 30 relative to the pair of lens support parts 20LS is roughly adjusted so that the above two heights are approximately equal. Then, the position of the collimating lens 30 relative to the pair of lens support parts 20LS is finely adjusted in a manner that the laser is appropriately collimated while emitting laser light from the laser diode chip 10. In addition, the above two heights do not necessarily need to be approximately equal, and they can also be different.

[0063] The collimating lens 30 of this embodiment is the same along the X direction, so there is no need to consider the alignment of the output end face 10e1 of the laser diode chip 10 and the collimating lens 30 in the X direction. It is sufficient that only the opposing portion of the collimating lens 30 that is opposite to the output end face 10e1 of the laser diode chip 10 and its peripheral portion are the same along the X direction. Therefore, the other two side portions do not necessarily need to be the same along the X direction, nor do they need to be transparent. The size of the two side portions of the collimating lens 30 in the Y direction can be larger than the size of the opposing portion and its peripheral portion in the Y direction, can be equal to it, or can be smaller than it. The collimating lens 30 can be formed, for example, of at least one of glass, quartz, synthetic quartz, sapphire, transparent ceramics, and plastic.

[0064] The collimating lens 30 is bonded to the end faces 20se of a pair of lens support parts 20LS in the Z direction. Even if the thickness of the bonding material bonding the collimating lens 30 to the end faces 20se of the pair of lens support parts 20LS has some deviation, the deviation will hardly affect the position of the collimating lens 30 in the Y direction. Different from the structure of the present embodiment, a pedestal having a plane parallel to the main plane 20s1 may be arranged in front of the auxiliary bracket 20, and the collimating lens 30 may be set on the plane of the pedestal. However, in such a structure, if the thickness of the bonding material between the collimating lens 30 and the plane of the pedestal deviates, the position of the laser diode chip 10 and the collimating lens 30 in the Y direction is offset, and the direction of the optical axis of the laser emitted from the laser light source 100 to the outside may be greatly offset. In contrast, in the present embodiment, it is difficult to generate a positional deviation between the laser diode chip 10 and the collimating lens 30 in the Y direction, and the direction of the optical axis of the laser emitted from the laser light source 100 to the outside can be made in the designed direction. Even if there is some variation in the thickness of the bonding material, the position of the collimator lens 30 changes only slightly along the optical axis of the laser light, so the variation hardly affects the direction of the optical axis of the laser light.

[0065] The collimating lens 30 and the end faces 20se of the pair of lens support parts 20LS can be bonded by, for example, a bonding material of an inorganic material such as gold-tin. A metal film may also be formed in advance on the bonding surface of the collimating lens 30 and the end faces 20se of the pair of lens support parts 20LS. The above-mentioned metal film makes it possible to bond, for example, using gold-tin. The bonding temperature of gold-tin is about 280°C. If the thermal conductivity of the ceramic forming the auxiliary bracket 20 is low, the effect of the heat on the laser diode chip 10 when the collimating lens 30 and the end faces 20se of the pair of lens support parts 20LS are bonded can be reduced.

[0066] As another example, the collimator lens 30 can be bonded to the end faces 20se of the pair of lens support parts 20LS by a bonding material including a thermosetting resin. The bonding temperature of the thermosetting resin is about 100°C, which is lower than the bonding temperature of inorganic materials. Therefore, the influence of heat on the laser diode chip 10 when the collimator lens 30 is bonded to the end faces 20se of the pair of lens support parts 20LS can be further reduced. In the bonding of the collimator lens 30 to the end faces 20se of the pair of lens support parts 20LS, the thermosetting resin can be bonded by, for example, laser irradiation. Figure 2A The position of the point P shown is heated thereby. The distance between the position of the point P and the end surface 20se of the pair of lens support parts 20LS in the Z direction is, for example, 50 μm or more and 500 μm or less. In the present embodiment, the optical axis of the laser light emitted from the laser diode chip 10 does not overlap with the bonding material when viewed from above, so even if outgassing is generated from the bonding material containing the thermosetting resin, it is possible to suppress the outgassing from approaching the laser diode chip 10. As a result, it is possible to suppress the generation of dust collection described later on the emission end surface 10e1 of the laser diode chip 10.

[0067] A part of the inorganic bonding material may contain an organic substance as a binder. Even when this bonding material is used for bonding the collimating lens 30 to the end faces 20se of the pair of lens support parts 20LS, outgassing generated by heating can be prevented from approaching the laser diode chip 10 .

[0068] The collimator lens 30 may be bonded to the end surfaces 20se of the pair of lens support parts 20LS by direct bonding without using a bonding material. Examples of direct bonding include diffusion bonding, room temperature bonding, and anodic bonding.

[0069] As can be seen from the description of the embodiment using the bonding material, even in bonding by direct bonding, it is possible to suppress positional deviation of the collimator lens 30 in the Y direction, similarly to bonding using the bonding material.

[0070] In the laser light source 100 of the present embodiment, the auxiliary support 20 supports the laser diode chip 10 and the collimating lens 30. The distance between the emission end face 10e1 of the laser diode chip 10 and the collimating lens 30 is short, so before the laser light emitted from the laser diode chip 10 diverges significantly, the divergence can be reduced by the small collimating lens 30. Therefore, a small laser light source 100 can be realized. In addition, the diameter of the collimated light beam passing through the collimating lens 30 can be reduced.

[0071] The semiconductor laser package 40 can also hermetically seal the laser diode chip 10, the auxiliary bracket 20, and the collimating lens 30. When the laser diode chip 10 emits a short-wavelength laser of, for example, more than 350 nm and less than 570 nm, the organic gas components contained in the ambient air are decomposed by the laser, and the decomposed products often adhere to the output end face 10e1 of the laser diode chip 10. In addition, if the output end face 10e1 of the laser diode chip 10 is in contact with the outside air, the end face may also degrade during operation due to dust collection, etc. Such end face degradation may lead to a reduction in the light output of the laser diode chip 10. In order to improve the reliability of the laser diode chip 10 and extend its life, it is preferred that the semiconductor laser package 40 hermetically seals the laser diode chip 10. The hermetic sealing performed by the semiconductor laser package 40 can also be performed regardless of the length of the wavelength of the laser emitted from the laser diode chip 10.

[0072] The substrate 40b of the semiconductor laser package 40 is in thermal contact with the back surface 20s2 of the auxiliary support 20. The substrate 40b can be formed of a material with high thermal conductivity. The material is, for example, a metal containing at least one selected from the group consisting of Cu, Al, Ag, Fe, Ni, Mo, Cu, W, and CuMo. In order to make the height of the emission end face 10e1 of the laser diode chip 10 consistent with that of the light transmission window 40w, a bottom surface 40bt of the substrate 40b and the auxiliary support 20 may be provided. Figure 1BAs shown, a component 40m with high thermal conductivity is provided. Component 40m can be formed of the same material as the portion including the bottom surface 40bt of substrate 40b. Alternatively, at least a portion of the bottom surface 40bt of substrate 40b can also be raised, and auxiliary bracket 20 is arranged on the raised bottom surface 40bt. The portion including the bottom surface 40bt in substrate 40b can be formed of copper, for example. The portion of substrate 40b surrounding laser diode 10, auxiliary bracket 20 and collimating lens 30 can be formed of kovar, for example. Kovar is an alloy formed by adding nickel and cobalt to iron as the main component. The cover 40L of semiconductor laser package 40 can be formed of the same material as substrate 40b, or it can be formed of a different material. The light-transmitting window 40w of semiconductor laser package 40 is mounted on substrate 40b to allow the laser emitted from laser diode chip 10 to pass through. The light-transmitting window 40 w of the semiconductor laser package 40 is the same as the collimating lens 30 , and may be formed of at least one of glass, quartz, synthetic quartz, sapphire, transparent ceramics, and plastic.

[0073] The pair of lead terminals 50 are electrically connected to the laser diode chip 10 via metal wires as follows. Figure 2A In the example shown, a metal film such as gold plating is formed on the upper surface of the laser diode chip 10. The metal film is electrically connected to one of the pair of lead terminals 50 through a metal wire. Similarly, a metal film such as gold plating is also formed on the main plane 20s1 of the auxiliary bracket 20. The metal film is electrically connected to the other of the pair of lead terminals 50 through a metal wire. Current is injected from the second cladding 10C2 of the laser diode chip 10 to the first cladding 10C1 through the pair of lead terminals 50. The pair of lead terminals 50 are electrically connected to an external circuit (not shown) that adjusts the emission timing and output of the laser emitted from the laser diode chip 10. The pair of lead terminals 50 are formed of a material with good conductivity. Examples of such materials include metals such as Fe-Ni alloys or Cu alloys.

[0074] In the laser light source 100 of the present embodiment, the auxiliary support 20 supports the laser diode chip 10 via the main plane 20s1 between the pair of lens support parts 20LS, and supports the collimating lens 30 via the end faces 20se of the pair of lens support parts 20LS. As a result, as described above, the alignment of the laser diode chip 10 and the collimating lens 30 becomes easy, and a small laser light source 100 can be realized. In addition, in the laser light source 100 of the present embodiment, even if the laser diode chip 10 is arranged in an inverted state on the auxiliary support 20, it is possible to suppress the bonding material from bulging toward the emission end face 10e1 of the laser diode chip 10.

[0075] (Variation of Implementation Example 1)

[0076] Next, Modifications 1 to 5 of the laser light source 100 according to Embodiment 1 of the present invention are described. In the following modifications, descriptions of the semiconductor laser package 40 and the pair of lead terminals 50 are omitted. Explanations overlapping with the above are sometimes omitted.

[0077] Reference Figure 3A to Figure 3C A configuration example of the laser light source 110 according to Modification 1 of Embodiment 1 of the present invention will be described. Figure 3A It is a perspective view schematically showing a configuration example of a laser light source 110 according to Modification 1 of Embodiment 1 of the present invention. Figure 3B It is a schematic representation Figure 3A A top view of the laser light source 110. Figure 3C is with Figure 3B The third embodiment is a cross-sectional view of the structure along the line IIIC-IIIC parallel to the YZ plane. The laser light source 110 of the variant 1 of the embodiment 1 is different from the laser light source 100 of the embodiment 1 in the shape of the auxiliary bracket 20. The front end face 20fe of the auxiliary bracket 20 has a central end face 20fe1 and two side end faces 20fe2 located on both sides of the central end face 20fe1. The central end face 20fe1 is more recessed in the resonator length direction than the two side end faces 20fe2. The edge 20ed of the main plane 20s1 of the variant 1 of the embodiment 1 is defined by the main plane 20s1 and the central end face 20fe1. The dimension of the recess of the central end face 20fe1 in the Z direction is, for example, greater than 5μm and less than 100μm, the dimension in the X direction is, for example, greater than 50μm and less than 200μm, and the dimension from the main plane 20s1 in the Y direction is, for example, greater than 100μm and less than 500μm. The recess does not necessarily need to penetrate along the Y direction.

[0078] The emission end face 10e1 of the laser diode chip 10 protrudes further in the resonator length direction than the edge 20ed of the main plane 20s1 defined by the main plane 20s1 and the central end face 20fe1. The side end faces 20fe2 of the auxiliary bracket 20 are the same as the end faces 20se of the pair of lens support parts 20LS, and protrude further in the resonator length direction than the emission end face 10e1 of the laser diode chip 10. The edge 20ed of the main plane 20s1 defined by the main plane 20s1 and the central end face 20fe1 can suppress the bonding material from bulging toward the emission end face 10e1 of the laser diode chip 10. The auxiliary bracket 20 of the modification 1 of the embodiment 1 only needs to remove a part of the front end face 20fe in the above-mentioned U-shaped shape extending in the Z direction, so that the production can be made easy. In addition, since the collimator lens 30 is bonded to the L-shaped end surface including the end surface 20se of the pair of lens support parts 20LS and the end surfaces 20fe2 on both sides, the contact area between the collimator lens 30 and the auxiliary holder 20 is increased, and bonding can be facilitated.

[0079] Next, refer to Figure 4A to Figure 4C A configuration example of the laser light source 120 according to Modification 2 of Embodiment 1 of the present invention will be described. Figure 4A It is a perspective view schematically showing a configuration example of a laser light source 120 according to a second modification of the first embodiment of the present invention. Figure 4B It is a schematic representation Figure 4A A top view of the laser light source 120. Figure 4C is with Figure 4B The laser light source 120 of the second variant of the first embodiment is different from the laser light source 100 of the first embodiment in the shape of the auxiliary bracket 20. The auxiliary bracket 20 of the second variant of the first embodiment has a groove 20d extending along the length direction of the resonator between each of the pair of lens support parts 20LS and the laser diode chip 10. Figure 4B In the example shown, the groove 20d is adjacent to the pair of lens support parts 20LS, but it is not necessarily necessary to be adjacent. The dimension of the groove 20d in the X direction is, for example, 100 μm or more and 500 μm or less, the dimension in the Y direction is, for example, 50 μm or more and 300 μm or less, and the dimension of the edge 20ed from the main plane 20s1 in the Z direction is, for example, 1 mm or more and 6 mm or less. The groove 20d does not necessarily need to penetrate in the Z direction. The groove 20d can reduce the influence of heat on the laser diode chip 10 when the collimating lens 30 is bonded to the end surface 20se of the pair of lens support parts 20LS.

[0080] Next, refer to Figure 5A to Figure 5C A configuration example of the laser light source 130 according to Modification 3 of Embodiment 1 of the present invention will be described. Figure 5A It is a perspective view schematically showing a configuration example of a laser light source 130 according to a third modification of the first embodiment of the present invention. Figure 5B It is a schematic representation Figure 5A A top view of the laser light source 130. Figure 5C is with Figure 5BVC-VC line cross-sectional view parallel to the YZ plane of the structure. The laser light source 130 of the variant 3 of the embodiment 1 is different from the laser light source 100 of the embodiment 1 in the structure of the auxiliary bracket 20. The auxiliary bracket 20 of the variant 3 of the embodiment 1 includes a first auxiliary bracket part 20p1 and a second auxiliary bracket part 20p2. The first auxiliary bracket part 20p1 has a pair of lens support parts 20LS on the upper surface 20us. The first auxiliary bracket part 20p1 has the above-mentioned U-shaped shape extending along the Z direction. The first auxiliary bracket part 20p1 can be formed of, for example, a ceramic including at least one selected from the group consisting of AlN, SiC and alumina, and an alloy such as CuW. The second auxiliary bracket part 20p2 is fixed to the upper surface 20us of the first auxiliary bracket part 20p1 and is located between the pair of lens support parts 20LS. The second auxiliary bracket part 20p2 has a main plane 20s1 on which the laser diode chip 10 is mounted, and a front end face 20fe opposite to the collimating lens 30. The main plane 20s1 is a surface on the side opposite to the surface fixed to the upper surface 20us in the first auxiliary support portion 20p1. In the present invention, the front end surface 20fe and the back surface 20s2 do not need to be directly connected. In the present invention, one side of the front end surface 20fe is in contact with one side of the main plane 20s1, and the side of the front end surface 20fe in contact with the main plane 20s1 defines the edge 20ed of the main plane 20s1. If the thermal conductivity of the second auxiliary support portion 20p2 is higher than that of the first auxiliary support portion 20p1, the heat generated by the laser diode chip 10 can be efficiently transferred to the outside. The second auxiliary support portion 20p2 can be formed, for example, by at least one selected from the group consisting of Cu, Al, Ag, Fe, Ni, Mo, Cu, W, CuW, CuMo, AlN, SiC and aluminum oxide. The second auxiliary support portion 20p2 has a dimension in the X direction of, for example, 0.5 mm to 1.5 mm, a dimension in the Y direction of, for example, 0.1 mm to 0.5 mm, and a dimension in the Z direction of, for example, 1 mm to 6 mm.

[0081] In the auxiliary support 20, the position of the second auxiliary support part 20p2 can be adjusted on the first auxiliary support part 20p1 by using the first auxiliary support part 20p1 and the second auxiliary support part 20p2 as separate bodies. As in the auxiliary support 20, the part having the main plane 20s1 and the part having the pair of lens support parts 20LS can also be separate bodies. In the auxiliary support 20, there is a gap 20g between each of the pair of lens support parts 20LS and the second auxiliary support part 20p2. The size of the gap 20g in the X direction is, for example, not less than 50μm and not more than 300μm. The sizes of the gap 20g in the Y direction and the Z direction are determined by the sizes of the second auxiliary support part 20p2 in the Y direction and the Z direction, respectively. Through the gap 20g, as in the laser light source 120 of the modified example 2 of the first embodiment, the influence of heat on the laser diode chip 10 when the collimating lens 30 is bonded to the end surface 20se of the pair of lens support parts 20LS can be suppressed.

[0082] Next, refer to Figure 6A to Figure 6C A configuration example of the laser light source 140 according to Modification 4 of Embodiment 1 of the present invention will be described. Fig. 6A FIG. 1 is a perspective view schematically showing a configuration example of a laser light source 140 according to a fourth variation of the first embodiment of the present invention. Fig. 6A In FIG. 1 , the laser diode chip 10 , the submount 20 , and the collimator lens 30 are described in a separated state, but they are actually bonded together. Figure 6B It is a schematic representation Fig. 6A A top view of the laser light source 140. Figure 6C is with Figure 6B The VIC-VIC line cross-sectional view of the structure parallel to the YZ plane. The laser light source 140 of the modification example 4 of the embodiment 1 is different from the laser light source 100 of the embodiment 1 in the structure of the auxiliary bracket 20. The auxiliary bracket 20 of the modification example 4 of the embodiment 1 has a through hole 20h extending from the main plane 20s1 to the back side 20s2, and a metal 20m filling the through hole 20h. The portion other than the through hole 20h of the auxiliary bracket 20 can be formed of ceramic, for example. The metal 20m has a high thermal conductivity, and can include at least one selected from the group consisting of Cu, Al, Ag, Fe, Ni, Mo, Cu, W and CuMo. The maximum dimension of the metal 20m in the X direction is, for example, greater than 0.5 mm and less than 1.5 mm, and the maximum dimension in the Z direction is, for example, greater than 1 mm and less than 6 mm. When viewed from above, the metal 20m can overlap with the laser diode chip 10 in its entirety or in part. By arranging the laser diode chip 10 in contact with the metal 20 m of the submount 20 , it is possible to efficiently transfer the heat generated from the laser diode chip 10 to the semiconductor laser package 40 via the metal 20 m.

[0083] Next, refer to Figure 7A to Figure 7C A configuration example of the laser light source 150 according to the fifth modification of the first embodiment of the present invention will be described. Fig. 7A It is a perspective view schematically showing a configuration example of a laser light source 150 according to a fifth modification of the first embodiment of the present invention. Figure 7B It is a schematic representation Fig. 7A A top view of the laser light source 150. Figure 7C is with Figure 7B The laser light source 150 of the modification 5 of the first embodiment is different from the laser light source 100 of the first embodiment in the shape of the collimating lens 30. The collimating lens 30 of the modification 5 of the first embodiment has a pair of flat portions 30f and a lens curved portion 30c sandwiched by the pair of flat portions 30f. The lens curved portion 30c of the modification 5 of the first embodiment is the same as the collimating lens 30 of the first embodiment and functions as a FAC lens.

[0084] Next, refer to Fig.7D Advantages of the pair of flat portions 30 f of the collimator lens 30 will be described. Fig.7D is a schematic diagram showing the use of an open clamp 60 to Fig. 7A A stereoscopic view of a state where the collimating lens 30 of the laser light source 150 is joined to the auxiliary bracket 20. The open clamp 60 has a fork-shaped portion 60a and a supporting portion 60b connected to the fork-shaped portion 60a. The open clamp 60 has a hollow structure and can adsorb and support the collimating lens 30. Specifically, the front end portion of the fork-shaped portion 60a of the open clamp 60 adsorbs a pair of flat portions 30f of the collimating lens 30. The supporting portion 60b is held by a mounting device, and the collimating lens 30 is supported by the fork-shaped portion 60a and joined to the auxiliary bracket 20, thereby stably applying a load in a direction perpendicular to the end faces 20se of a pair of lens supports 20LS. In a state where the load is applied, the bonding material between the collimating lens 30 and the end faces 20se of the pair of lens supports 20LS is heated.

[0085] A reflector (not shown) may be provided between the fork-shaped parts 60a of the opening clamp 60. While the laser diode chip 10 emits laser light in the Z direction, the collimating lens 30 is joined to the auxiliary bracket 20, and the laser light reflected in the Y direction by the reflector (not shown) is received by the light receiving device, thereby enabling the collimating lens 30 and the emission end face 10e1 of the laser diode chip 10 to be aligned with high precision. The light receiving device may be, for example, a power meter, a parallelism meter, or a beam profiler.

[0086] (Implementation Method 2)

[0087] Next, refer to Figures 8A to 8DA basic configuration example of a laser light source according to a second embodiment of the present invention will be described.

[0088] Fig. 8A A perspective view schematically showing a configuration example of a laser light source 200 according to a second embodiment of the present invention. Figure 8B It is a schematic representation Fig. 8A A top view of the laser light source 200. Figure 8C is with Figure 8B A cross-sectional view of the structure along the VIIIC-VIIIC line parallel to the YZ plane. Fig.8D It is a schematic representation Fig. 8A The rear view of the laser light source 200 of the second embodiment is different from the laser light source 100 of the first embodiment in the structure of the auxiliary bracket 20. The auxiliary bracket 20 of the second embodiment includes a third auxiliary bracket part 20p3 and a fourth auxiliary bracket part 20p4. The third auxiliary bracket part 20p3 has a main plane 20s1, a back side 20s2 and a front end face 20fe. The fourth auxiliary bracket part 20p4 has a pair of lens support parts 20LS fixed to the main plane 20s1 of the third auxiliary bracket part 20p3, and a connecting part 20L connecting the pair of lens support parts 20LS. The connecting part 20L connects the pair of lens support parts 20LS in a manner that does not hinder the propagation of the laser light emitted from the emission end face 10e1 of the laser diode chip 10. In the auxiliary bracket 20, the third auxiliary bracket part 20p3 and the fourth auxiliary bracket part 20p4 are separate. As in the auxiliary support 20, the portion having the principal plane 20s1 and the portion having the pair of lens support portions 20LS may be separate bodies. Fig. 8A , the third auxiliary holder part 20p3, the fourth auxiliary holder part 20p4 and the collimating lens 30 are described as separated, but they are actually joined. The pair of lens support parts 20LS and the connecting part 20L of the fourth auxiliary holder part 20p4 are integrally formed.

[0089] like Figure 8B as well as Figure 8C As shown in FIG. 1 , the connecting portion 20L overlaps with the emission end face 10e1 of the laser diode chip 10 in a plan view. Fig.8DAs shown, the fourth auxiliary support portion 20p4 is arranged on the main plane 20s1 of the third auxiliary support portion 20p3 in a manner that straddles the laser diode chip 10. The dimension of the fourth auxiliary support portion 20p4 in the X direction is larger than the dimension of the third auxiliary support portion 20p3 in the X direction, so the area of ​​the end surface 20se of the pair of lens support portions 20LS can be increased. As a result, it is easy to join the collimating lens 30 to the end surface 20se of the pair of lens support portions 20LS. The dimension of the pair of lens support portions 20LS in the Y direction of the fourth auxiliary support portion 20p4 can be the same as the dimension of the collimating lens 30 in the Y direction. The dimension of the pair of lens support portions 20LS in the Y direction of the fourth auxiliary support portion 20p4 can be larger than, equal to, or smaller than the dimension of the collimating lens 30 in the Y direction. The dimension of the fourth auxiliary support portion 20p4 in the X direction is, for example, greater than 0.5 mm and less than 4 mm, the maximum dimension in the Y direction is, for example, greater than 0.5 mm and less than 2 mm, and the dimension in the Z direction is, for example, greater than 0.5 mm and less than 1 mm.

[0090] In the manufacture of the laser light source 200 of the second embodiment, the process of bonding the laser diode chip 10 to the principal plane 20s1 of the third auxiliary support portion 20p3, the process of bonding the fourth auxiliary support portion 20p4 to the principal plane 20s1 of the third auxiliary support portion 20p3 in a manner straddling the laser diode chip 10, and the process of bonding the collimating lens 30 to the end faces 20se of the pair of lens support portions 20LS of the fourth auxiliary support portion 20p4 may be performed in this order. Alternatively, the fourth auxiliary support portion 20p4 to which the collimating lens 30 is bonded may be bonded to the third auxiliary support portion 20p3 to which the laser diode chip 10 is bonded to the principal plane 20s1.

[0091] In the laser light source 200 of the second embodiment, similarly to the laser light source 100 of the first embodiment, the auxiliary support 20 supports the laser diode chip 10 via the main plane 20s1 between the pair of lens support parts 20LS, and supports the collimating lens 30 via the end faces 20se of the pair of lens support parts 20LS. As a result, the alignment of the laser diode chip 10 and the collimating lens 30 becomes easy, and a compact laser light source 200 can be realized. Furthermore, in the laser light source 200 of the second embodiment, similarly to the laser light source 100 of the first embodiment, even if the laser diode chip 10 is arranged on the auxiliary support 20 in an inverted state, it is possible to suppress the bonding material from bulging toward the emission end face 10e1 of the laser diode chip 10.

[0092] (Variation of Implementation Example 2)

[0093] Next, Modification 1 and Modification 2 of the laser light source 200 according to Embodiment 2 of the present invention will be described. Explanations overlapping with the above are often omitted.

[0094] Reference FIG. 9A to FIG. 9D A configuration example of the laser light source 210 according to Modification 1 of Embodiment 2 of the present invention will be described. Fig.9A It is a perspective view schematically showing a configuration example of a laser light source 210 according to Modification 1 of Embodiment 2 of the present invention. Fig. 9B It is a schematic representation Fig.9A A top view of the laser light source 210. Fig. 9C is with Fig. 9B A cross-sectional view of the structure parallel to the IXC-IXC line on the YZ plane. Fig.9D It is a schematic representation Fig.9A The laser light source 210 of the modification example 1 of the embodiment 2 is different from the laser light source 200 of the embodiment 2 in the shape of the fourth auxiliary support portion 20p4 of the auxiliary support 20. The fourth auxiliary support portion 20p4 of the modification example 1 of the embodiment 2 has a cutout 20co between the pair of lens support portions 20LS in the fourth auxiliary support portion 20p4 of the embodiment 2. Fig. 9B as well as Fig. 9C As shown, the connection portion 20L does not overlap with the emission end face 10e1 of the laser diode chip 10 due to the cutout 20co when viewed from above. The dimension of the cutout 20co in the X direction is, for example, greater than 0.2 mm and less than 3 mm, and the dimension in the Z direction is, for example, greater than 0.5 mm and less than 1 mm. The dimension in the Z direction of the cutout 20co is larger than the dimension in the Z direction of the end face 20se of the pair of lens support portions 20LS and the edge 20ed of the main plane 20s1 of the third auxiliary support portion 20p3. In the manufacture of the laser light source 210 of the first variant of the second embodiment, the alignment of the emission end face 10e1 of the laser diode chip 10 and the fourth auxiliary support portion 20p4, and the alignment of the emission end face 10e1 of the laser diode chip 10 and the collimating lens 30 are facilitated by the cutout 20co.

[0095] Next, refer to FIG. 10A to FIG. 10D A configuration example of the laser light source 220 according to Modification 2 of Embodiment 2 of the present invention will be described. Fig. 10A It is a perspective view schematically showing a configuration example of a laser light source 220 according to a second modification of the second embodiment of the present invention. Fig. 10B It is a schematic representation Fig. 10A A top view of the laser light source 220. Fig. 10C is with Fig. 10B A cross-sectional view of the structure along the XC-XC line parallel to the YZ plane. Fig. 10D It is a schematic representation Fig. 10AThe fourth auxiliary support portion 20p4 and the collimating lens 30 are shown in FIG. The laser light source 220 of the second variation of the second embodiment is different from the laser light source 200 of the second embodiment in terms of the fourth auxiliary support portion 20p4 and the collimating lens 30 of the auxiliary support 20. Fig. 10D As shown, the fourth auxiliary support portion 20p4 and the collimating lens 30 of the modified example 2 of the embodiment 2 are integrally formed. Since the fourth auxiliary support portion 20p4 and the collimating lens 30 do not need to be joined, the dimension of the fourth auxiliary support portion 20p4 in the modified example 2 of the embodiment 2 in the X direction may not be as large as the dimension of the fourth auxiliary support portion 20p4 in the X direction of the embodiment 2. The dimension of the fourth auxiliary support portion 20p4 in the modified example 2 of the embodiment 2 in the X direction is, for example, greater than 0.2 mm and less than 3 mm, the maximum dimension in the Y direction is, for example, greater than 0.3 mm and less than 1 mm, and the dimension in the Z direction is, for example, greater than 0.5 mm and less than 1 mm.

[0096] The fourth auxiliary support portion 20p4 and the collimating lens 30 formed integrally can be formed of at least one of glass, quartz, synthetic quartz, sapphire, transparent ceramics and plastic. When the fourth auxiliary support portion 20p4 and the collimating lens 30 formed integrally are transparent, the alignment of the emission end face 10e1 of the laser diode chip 10 and the collimating lens 30 becomes easy.

[0097] The structural elements of the above-described embodiment and the modified example may be arbitrarily combined.

[0098] (Application example)

[0099] The laser light source of the present invention can be used as a light source of a direct diode laser that couples multiple laser beams to increase output. Beam coupling is performed by correctly coupling laser beams emitted from multiple laser light sources. Based on a high-intensity laser beam with a wavelength of less than 570nm, it is also easy to process metals such as copper. In the laser light source of the present invention, since it is difficult to cause positional deviation between the laser diode chip and the lens, the direction of the optical axis of the laser emitted from the laser light source to the outside will not be greatly offset. The laser beams emitted from multiple laser light sources can be correctly coupled, and the beam quality can be improved.

[0100] Possibility of industrial application

[0101] The laser light source of the present invention can also be used in, for example, projectors and lighting equipment.

[0102] Description of Reference Numerals

[0103] 10…Laser diode chips

[0104] 10a ... semiconductor stacked structure

[0105] 10b…Substrate

[0106] 10C1…First cladding

[0107] 10C2…Second cladding

[0108] 10e1…Output end face

[0109] 10e2…Rear end face

[0110] 10L…luminescent layer

[0111] 20…Auxiliary bracket

[0112] 20co…Incision

[0113] 20d...slot

[0114] 20ed…edge

[0115] 20fe…Front end face

[0116] 20fe1…Central end face

[0117] 20fe2…Both sides

[0118] 20L…Connection

[0119] 20LS...Lens support

[0120] 20p1…First auxiliary bracket part

[0121] 20p2…Second auxiliary bracket part

[0122] 20p3…third auxiliary bracket part

[0123] 20p4…Part 4 of the auxiliary bracket

[0124] 20s1…Main plane

[0125] 20s2…Back

[0126] 20se…end faces of a pair of lens support parts

[0127] 20us…upper surface of the first auxiliary bracket part

[0128] 30…Collimating lens

[0129] 30c…Lens curved part

[0130] 30f…Flat part

[0131] 40…Semiconductor laser packaging

[0132] 40b…base

[0133] 40L…cover

[0134] 40w...light-transmitting window

[0135] 50…Wire terminal

[0136] 60…Open clamp

[0137] 60a…Fork section

[0138] 60b…Supporting part

[0139] 100, 110, 120, 130, 140, 150...Laser light source

[0140] 200, 210, 220…laser light source.

Claims

1. A laser light source, comprising: An end-emission laser diode chip, comprising: a semiconductor stacked structure including a light-emitting layer, a first end face for emitting laser light generated by the light-emitting layer, and a second end face on the opposite side of the first end face, wherein a resonator length is defined by a distance from the first end face to the second end face; An auxiliary support having: a main plane on which the laser diode chip is fixed, and a back surface located on the opposite side of the main plane; a pair of lens support parts, the pair of lens support parts are arranged on the main plane of the auxiliary bracket and are located on both sides of the first end surface of the laser diode chip; a connecting portion connecting the pair of lens supporting portions in a manner that does not hinder the propagation of the laser light emitted from the first end surface of the laser diode chip, wherein the connecting portion overlaps the first end surface of the laser diode chip in a plan view; a lens joined to the end surfaces of the pair of lens support portions; and A semiconductor laser package that houses the laser diode chip, the lens, the pair of lens support parts, the connecting part, and the auxiliary bracket. The first end face of the laser diode chip protrudes further in the direction of the resonator length than the edge of the main plane. The end faces of the pair of lens support portions protrude further in the direction of the cavity length than the first end face of the laser diode chip. The pair of lens support parts and the connecting part are integrally molded.

2. The laser light source according to claim 1, wherein: The semiconductor laser package includes a base body that is in thermal contact with the back surface of the submount and hermetically seals the laser diode chip, the submount, and the lens.

3. The laser light source according to claim 1 or 2, wherein: The auxiliary support has a front end surface connecting the main plane and the back surface. The front end surface comprises a central end surface and two side end surfaces located on both sides of the central end surface. The central end face is more recessed in the direction of the resonator length than the two side end faces. The edge of the main plane is defined by the main plane and the central end surface of the auxiliary support.

4. The laser light source according to claim 1 or 2, wherein: The auxiliary mount has a groove extending in a direction of the length of the resonator between each of the pair of lens support portions and the laser diode chip.

5. The laser light source according to claim 1 or 2, wherein: The lens is bonded to the end surfaces of the pair of lens support parts via an inorganic material.

6. The laser light source according to claim 1 or 2, wherein: A part or the whole of the auxiliary bracket is formed of ceramic.

7. The laser light source according to claim 6, wherein: The auxiliary bracket includes a through hole extending from the main plane to the back surface, and a metal filling the through hole.

8. The laser light source according to claim 1 or 2, wherein: When viewed in the direction of the resonator length, the center of gravity of the lens is located between the pair of lens support parts.

9. The laser light source according to claim 1 or 2, wherein: The wavelength of the laser light is not less than 350 nm and not more than 570 nm.

10. The laser light source according to claim 1 or 2, wherein: The lens has a structure extending in a direction perpendicular to both the normal direction of the principal plane and the direction of the resonator length. The lens reduces a divergence angle of the laser light in a plane including both a normal direction of the principal plane and a direction of the cavity length.

11. The laser light source according to claim 1 or 2, wherein: The lens includes a pair of flat portions and a lens curved portion sandwiched by the pair of flat portions.

12. The laser light source according to claim 1 or 2, wherein: The pair of lens support parts, the connecting part, and the lens are integrally molded.

Images