Silicon-based OLED assembly and manufacturing method thereof

Abstract

The invention relates to a silicon-based OLED assembly and a manufacturing method thereof. The manufacturing method of the silicon-based OLED assembly comprises the following steps: providing a substrate; forming a plurality of metal anode units spaced by a preset distance on the substrate and pixel isolation layers located between the adjacent metal anode units; evaporating a blue phosphorescent layer on the substrate; wherein the blue phosphorescent layer covers the metal anode unit and the pixel isolation layer; sputtering a transparent cathode layer on the blue phosphor layer; depositing a first inorganic film packaging layer on the transparent cathode layer; forming a quantum dot color conversion layer on the first inorganic film encapsulation layer, wherein the quantum dot color conversion layer does not comprise a blue color conversion layer; compared with a white light OLED, the blue phosphorescent layer is used for emitting light, so that the OLED is simpler in structure, thinner in film layer and higher in light emitting efficiency; in addition, a traditional blue color green light film is removed from the quantum dot color conversion layer, and blue light brightness attenuation and luminous efficiency loss caused by the fact that a light source penetrates through a color filter film are avoided.

Description

Technical Field

[0001] The present invention relates to the technical field of LED chips, and in particular to a silicon-based OLED component and a manufacturing method thereof. Background Art

[0002] At present, in the field of micro-display, full-color display is usually achieved by adding OLED white light to a color filter (CF); however, the color filter (CF) has a low light transmittance, and the OLED white light passing through the color filter (CF) will cause light loss, resulting in brightness attenuation and reduced luminous efficiency. In addition, in OLED white light emitting devices, the white light emitting layer is formed by superposition of blue fluorescent, green phosphorescent, and red phosphorescent material film layers, and interference is prone to occur between the film layers. The thicker the film layers, the weaker the luminous efficiency and the more complex the structure. The blue fluorescent material has low luminous efficiency and short life. The method of superimposing blue, green, and red light material film layers to form white light, and then having white light penetrate the color filter to form a red, green, and blue combination, seriously affects the luminous intensity and luminous efficiency of the OLED micro-display. Summary of the invention

[0003] In view of the above-mentioned deficiencies in the prior art, the purpose of the present application is to provide a silicon-based OLED component and a method for manufacturing the same, aiming to solve the problem of low luminous intensity and luminous efficiency of a microdisplay.

[0004] In a first aspect, the present application provides a method for manufacturing a silicon-based OLED component, comprising:

[0005] Providing a substrate, the substrate comprising a display driving circuit;

[0006] Forming a plurality of metal anode units spaced a predetermined distance apart and a pixel isolation layer between adjacent metal anode units on the substrate;

[0007] A blue phosphor layer is evaporated on the substrate; wherein the blue phosphor layer covers the metal anode unit and the pixel isolation layer;

[0008] sputtering a transparent cathode layer on the blue phosphor layer;

[0009] depositing a first inorganic film encapsulation layer on the transparent cathode layer;

[0010] A quantum dot color conversion layer is formed on the first inorganic film encapsulation layer, wherein the quantum dot color conversion layer does not include a blue color conversion layer.

[0011] In a possible embodiment, forming a quantum dot color conversion layer on the first inorganic film encapsulation layer includes:

[0012] forming a first planarization layer on the first inorganic film encapsulation layer;

[0013] A quantum dot color conversion layer is formed on the first planar layer.

[0014] In a possible embodiment, the quantum dot color conversion layer includes a light shielding layer, a green color conversion layer, and a red color conversion layer, and the step of forming the quantum dot color conversion layer on the first flat layer includes:

[0015] forming a plurality of light shielding layers, a green color conversion layer and a red color conversion layer spaced at a preset distance on the first flat layer;

[0016] The green color conversion layer and the red color conversion layer are located directly above the metal anode unit, and the light shielding layer is located directly above the pixel isolation layer.

[0017] In a possible embodiment, after forming the quantum dot color conversion layer on the first inorganic film encapsulation layer, the silicon-based OLED component manufacturing further includes:

[0018] A second inorganic encapsulation film layer is deposited on the quantum dot color conversion layer.

[0019] In a possible embodiment, the method for manufacturing a silicon-based OLED component further includes:

[0020] forming a second planarization layer on the second inorganic encapsulation film layer;

[0021] A glass cover is provided, wherein the glass cover is disposed on the second flat layer.

[0022] In a second aspect, the present application further provides a silicon-based OLED component, comprising:

[0023] A substrate, the substrate comprising a display driving circuit, a plurality of metal anode units spaced a predetermined distance apart, and a pixel isolation layer located between adjacent metal anode units;

[0024] A blue phosphor layer, the blue phosphor layer covering the metal anode unit and the pixel isolation layer;

[0025] A transparent cathode layer, wherein the transparent cathode layer is disposed on the blue phosphor layer;

[0026] a first inorganic film encapsulation layer, wherein the first inorganic film encapsulation layer is disposed on the transparent cathode layer;

[0027] A quantum dot color conversion layer is provided on the first inorganic film encapsulation layer, wherein the quantum dot color conversion layer does not include a blue color conversion layer.

[0028] In a possible embodiment, the silicon-based OLED component further includes:

[0029] A first flat layer is provided between the first inorganic film encapsulation layer and the quantum dot color conversion layer.

[0030] In a possible embodiment, the quantum dot color conversion layer includes a plurality of light shielding layers, a green color conversion layer, and a red color conversion layer spaced at a preset distance;

[0031] The green color conversion layer and the red color conversion layer are located directly above the metal anode unit, and the light shielding layer is located directly above the pixel isolation layer.

[0032] In a possible embodiment, the silicon-based OLED component further includes:

[0033] A second inorganic packaging film layer is disposed on the quantum dot color conversion layer.

[0034] In a possible embodiment, the silicon-based OLED component further includes:

[0035] A second flat layer, wherein the second flat layer is disposed on the second inorganic encapsulation film layer;

[0036] A glass cover plate is disposed on the second flat layer.

[0037] Beneficial effects:

[0038] The present application provides a silicon-based OLED component and a method for manufacturing the same. By using a blue phosphor layer to emit light, the structure is simpler than that of a white light OLED, the film layer is thinner, and the luminous efficiency is higher. In addition, the traditional blue-colored green light film is removed from the quantum dot color conversion layer, thereby avoiding the attenuation of blue light brightness and the loss of luminous efficiency caused by the light source passing through the color filter film, thereby improving the light output rate and luminous efficiency of the display device. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 This is a schematic diagram of the structure of a traditional silicon-based OLED;

[0040] Figure 2 This is a schematic diagram of the light-emitting structure of white light OLED in traditional silicon-based OLED;

[0041] Figure 3 A schematic diagram of a process for manufacturing a silicon-based OLED component provided in an embodiment of the present application;

[0042] Figure 4 A schematic diagram of the structure of a silicon-based OLED component provided in an embodiment of the present application;

[0043] Figure 5 for Figure 4Schematic diagram of the blue phosphorescent OLED light-emitting structure in the silicon-based OLED component shown. DETAILED DESCRIPTION

[0044] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0045] The disclosure of the present invention provides many different embodiments or examples to realize different structures of the present invention. In order to simplify the disclosure of the present invention, the components and settings of specific examples are described in the present invention. Of course, they are only examples, and the purpose is not to limit the present invention. In addition, the present invention can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplicity and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the present invention provides various specific examples of processes and materials, but those of ordinary skill in the art can be aware of the application of other processes and / or the use of other materials.

[0046] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art to which the present application belongs. The terms used herein in the specification of the present application are only for the purpose of describing specific embodiments and are not intended to limit the present application. Generally, the terms can be understood at least in part according to the usage of the present invention. For example, the term "one or more" used in the present invention depends at least in part on the present invention and can be used to describe any component, structure or feature in a singular form, or can be used to describe a combination of components, structures or features in a plural form. Similarly, terms such as "one", "an" or "the" can also be understood at least in part to convey singular usage or convey plural usage depending on the present invention. In addition, the term "based on..." can be understood as not necessarily intended to convey a set of exclusive factors, but at least in part depending on the present invention can instead allow the presence of additional factors that do not necessarily have to be explicitly described.

[0047] It should be easily understood that the meanings of “on,” “over,” and “on…” in the present invention should be interpreted in the broadest manner, so that “on…” means not only “directly on something,” but also means “on something” including the presence of intermediate components or layers therebetween, and “on something” or “on something” means not only “on something” or “on something,” but also includes the meaning of “on something” or “on something” without any intermediate components or layers therebetween.

[0048] Additionally, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," etc. may be used herein to describe the relationship of one element or component to another element or component as shown in the drawings. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientations depicted in the drawings. The device may be otherwise oriented, rotated 90 degrees or at other orientations, and the spatially relative descriptors used herein may likewise be interpreted accordingly.

[0049] The term "layer" used in the present invention refers to a material portion including an area with a certain thickness. The layer can extend over the entire lower or upper structure, or can have a degree less than the scope of the lower or upper structure. In addition, the layer can be a region of a homogeneous or inhomogeneous continuous structure, and its thickness is less than the thickness of the continuous structure. For example, the layer can be located between the top surface and the bottom surface of the continuous structure or between any pair of horizontal planes therebetween. The layer can extend horizontally, vertically and / or along a tapered surface. The substrate can be a layer, one or more layers can be included therein, and / or one or more layers can be provided thereon, above and / or below. A layer can include multiple layers. For example, the semiconductor layer can include one or more doped or undoped semiconductor layers, and can have the same or different materials.

[0050] refer to Figure 1-2 , is a schematic diagram of the structure of a traditional OLED structure. As shown in the figure, in this OLED structure, a red light emitting layer (made of red phosphorescent material), a green light emitting layer (made of green phosphorescent material) and a blue light emitting layer (made of blue fluorescent material) are stacked to emit white light. Interference is easy to occur between the film layers, and the luminous efficiency will also decrease as the film layers become thicker and the structure is complex. The way in which the white light emitted penetrates the color filter film (RGB filter film) to form a red, green and blue combination will also seriously affect the luminous intensity and luminous efficiency of the OLED micro display.

[0051] Based on this, the present application hopes to provide a solution that can solve the above-mentioned technical problems, the details of which will be described in the subsequent embodiments.

[0052] refer to Figure 3 , is a schematic flow chart of a method for manufacturing a silicon-based OLED component provided in an embodiment of the present application, the method comprising:

[0053] 101: Provide a substrate.

[0054] In this embodiment, the substrate includes a display driving circuit.

[0055] It is understandable that the substrate is pre-arranged with a display driving circuit, such as an AM driving circuit or a PM driving circuit, which is not specifically limited here.

[0056] 102: Forming a plurality of metal anode units spaced apart by a predetermined distance and a pixel isolation layer between adjacent metal anode units on the substrate.

[0057] It should be understood that the display driving circuit is used to connect the metal anode unit.

[0058] It is understandable that the specific spacing distance between the metal anode units can be set according to actual needs and is not specifically limited here.

[0059] It can be understood that the metal anode units can be distinguished according to pixels and set as red metal anode units (R-Anode), green metal anode units (G-Anode) and blue metal anode units (B-Anode), the red metal anode unit corresponding to the red sub-pixel, the green metal anode unit corresponding to the green sub-pixel, and the blue metal anode unit corresponding to the blue sub-pixel.

[0060] Optionally, in this embodiment, the material of the pixel isolation layer is not specifically limited. For example, in this embodiment, the material of the pixel isolation layer (PDL) is preferably silicon oxide (SiO) material or silicon nitride (SiN) material, the silicon oxide (SiO) material is preferably SiO2, and the silicon nitride (SiN) material is preferably Si3N4.

[0061] Optionally, in this embodiment, in the vertical direction, the length of the upper surface of the pixel isolation layer is greater than the length of the upper surface of the metal anode unit, so that the pixel isolation layer covers the edge of the metal anode unit.

[0062] It can be understood that the pixel isolation layer can be formed by evaporation, and the specific process is not specifically limited in this embodiment.

[0063] 103: Vapor-depositing a blue phosphor layer on the substrate.

[0064] Wherein, the blue phosphor layer covers the metal anode unit and the pixel isolation layer.

[0065] As an implementation method, the blue phosphorescent layer is deposited on the metal anode unit by evaporating a blue phosphorescent OLED material.

[0066] It is understandable that using blue phosphorescent OLED material as a light source can effectively extend the service life of the silicon-based OLED component.

[0067] That is to say, in the present application, blue phosphorescent OLED is used to cleverly replace the white light emitting layer composed of blue fluorescence, green phosphorescence and red phosphorescence in the traditional white light OLED, thereby extending the service life and improving the luminous efficiency.

[0068] 104: Sputtering a transparent cathode layer on the blue phosphor layer.

[0069] It is understandable that the transparent cathode layer can be formed by sputtering or evaporation, which is not specifically limited herein.

[0070] Optionally, in this embodiment, the material of the transparent cathode layer is not specifically limited.

[0071] 105: Depositing a first inorganic film encapsulation layer on the transparent cathode layer.

[0072] As an implementation manner, the first inorganic film encapsulation layer is deposited on the transparent cathode layer by chemical vapor deposition and atomic layer deposition.

[0073] Optionally, the material of the first inorganic film encapsulation layer is a water and oxygen barrier material, for example, the material of the first inorganic film encapsulation layer is a silicon oxide material, a silicon nitride material or an aluminum oxide material. Specifically, the silicon oxide material may be SiO2, the silicon nitride material may be Si3N4, and the aluminum oxide material may be Al2O3.

[0074] It should be understood that the above materials are only examples and not limitations.

[0075] 106: Forming a quantum dot color conversion layer on the first inorganic film encapsulation layer, wherein the quantum dot color conversion layer does not include a blue color conversion layer.

[0076] As an implementation manner, step 106 includes: forming a first planar layer on the first inorganic film encapsulation layer; and forming a quantum dot color conversion layer on the first planar layer.

[0077] Optionally, the material of the first planar layer is a low-refractive-index organic material, which is not specifically limited herein.

[0078] It can be understood that the first planar layer can be formed by coating a low-refractive-index organic material on the first inorganic film encapsulation layer in a coating manner.

[0079] Of course, in actual use, the first flat layer may also be formed by other methods, which are not specifically limited here.

[0080] Optionally, the quantum dot color conversion layer includes a light shielding layer, a green color conversion layer and a red color conversion layer.

[0081] As an embodiment, forming a quantum dot color conversion layer on the first flat layer includes:

[0082] A plurality of light shielding layers, a green color conversion layer and a red color conversion layer spaced at a preset distance are formed on the first flat layer; wherein the green color conversion layer and the red color conversion layer are located directly above the metal anode unit, and the light shielding layer is located directly above the pixel isolation layer.

[0083] The specific setting of the preset distance can be set according to actual needs, such as pixel spacing or sub-pixel size, etc., and is not specifically limited here.

[0084] It should be understood that the light shielding layer, the green color conversion layer and the red color conversion layer are located in the same layer, and a light shielding layer is arranged between the green color conversion layer and the red color conversion layer for light shielding.

[0085] That is, the color conversion layers are sequentially arranged on the first flat layer in the order of RGB or BGR, and the blue sub-pixel is left blank because it has no color conversion layer. The light shielding layers are sequentially arranged between different color conversion layers.

[0086] It is understandable that the green color conversion layer is located directly above the green sub-pixel, and the red color conversion layer is located directly above the red sub-pixel. Since no color conversion layer is disposed directly above the blue sub-pixel, the area directly above the blue sub-pixel is a blank area between two adjacent light shielding layers.

[0087] Optionally, the light shielding layer is a black barrier structure, which is used to shield the light excited by adjacent sub-pixels and reduce light crosstalk.

[0088] Optionally, the light-shielding layer is made of a black light-shielding material, such as black glue.

[0089] It can be understood that in this embodiment, by removing the traditional blue color green film (blue CF) in the quantum dot color conversion layer, the attenuation of blue light brightness and the loss of luminous efficiency caused by the light source passing through the color filter film are avoided, so as to improve the luminous efficiency.

[0090] In a possible embodiment, the silicon-based OLED component manufacturing method further includes: depositing a second inorganic encapsulation film layer on the quantum dot color conversion layer.

[0091] Optionally, the second inorganic encapsulation film layer may also be deposited on the quantum dot color conversion layer by chemical vapor deposition and atomic layer deposition.

[0092] Optionally, the material of the second inorganic film encapsulation layer is a water and oxygen barrier material, for example, the material of the second inorganic film encapsulation layer is a silicon oxide material, a silicon nitride material or an aluminum oxide material. Specifically, the silicon oxide material may be SiO2, the silicon nitride material may be Si3N4, and the aluminum oxide material may be Al2O3.

[0093] It should be understood that the above materials are only examples and not limitations.

[0094] In a possible embodiment, the silicon-based OLED component manufacturing method further includes: forming a second flat layer on the second inorganic packaging film layer; and providing a glass cover plate, wherein the glass cover plate is disposed on the second flat layer.

[0095] Optionally, the second planar layer and the first planar layer may be made of the same material, or may be made of different organic materials with low refractive index, which is not specifically limited here.

[0096] It can be understood that in this embodiment, by combining the blue phosphorescent OLED with a quantum dot color conversion layer (QD), it is possible to avoid brightness attenuation and luminous efficiency loss caused by the light source passing through the color filter film, thereby improving the luminous intensity and luminous efficiency of the OLED microdisplay; in addition, the blue phosphorescent OLED replaces the white light OLED composed of blue fluorescence, green phosphorescence, and red phosphorescence, so that the single-layer blue phosphorescent OLED light source has a simpler structure than the white light OLED, a thinner film layer, and a higher luminous efficiency.

[0097] refer to Figure 4 As shown, based on the same inventive concept, the present application also provides a silicon-based OLED component, including: a substrate 10, a blue phosphor layer 20, a transparent cathode layer 30, a first inorganic film encapsulation layer 40 and a quantum dot color conversion layer.

[0098] The substrate 10 includes a display driving circuit, a plurality of metal anode units 11 spaced apart by a predetermined distance, and a pixel isolation layer 13 located between adjacent metal anode units 11 .

[0099] It is understandable that the substrate 10 is pre-arranged with a display driving circuit, such as an AM driving circuit or a PM driving circuit, which is not specifically limited here.

[0100] It is understandable that the specific spacing distance between the metal anode units 11 can be set according to actual needs and is not specifically limited here.

[0101] It can be understood that the metal anode unit 11 can be differentiated according to pixels and set as a red metal anode unit (R-Anode), a green metal anode unit (G-Anode) and a blue metal anode unit (B-Anode). The red metal anode unit corresponds to the red sub-pixel, the green metal anode unit corresponds to the green sub-pixel, and the blue metal anode unit corresponds to the blue sub-pixel.

[0102] Optionally, in this embodiment, the material of the pixel isolation layer 13 is not specifically limited. For example, in this embodiment, the material of the pixel isolation layer 13 is preferably silicon oxide (SiO) material or silicon nitride (SiN) material, the silicon oxide (SiO) material is preferably SiO2, and the silicon nitride (SiN) material is preferably Si3N4.

[0103] Optionally, in this embodiment, in the vertical direction, the length of the upper surface of the pixel isolation layer 13 is greater than the length of the upper surface of the metal anode unit 11 , so that the pixel isolation layer 13 covers the edge of the metal anode unit 11 .

[0104] It can be understood that the pixel isolation layer 13 can be formed by evaporation, and the specific process is not specifically limited in this embodiment.

[0105] In this embodiment, the blue phosphor layer 20 covers the metal anode unit 11 and the pixel isolation layer 13 .

[0106] It should be noted that the blue phosphor layer 20 can be formed by evaporating a blue phosphorescent OLED material, which is not specifically limited here.

[0107] It is understandable that using blue phosphorescent OLED material as a light source can effectively extend the service life of the silicon-based OLED component.

[0108] That is, in this application, using blue phosphorescent OLED (such as Figure 5 ) to cleverly replace traditional white light OLED (such as Figure 2 The blue fluorescence, green phosphorescence, and red phosphorescence in the white light emitting layer are shown in Figure 1, thereby extending the service life and improving the luminous efficiency. In addition, the single-layer blue phosphorescent OLED light source is simpler in structure than the white light OLED, with a thinner film layer and higher luminous efficiency.

[0109] In this embodiment, the transparent cathode layer 30 is disposed on the blue phosphor layer 20 .

[0110] It should be noted that the transparent cathode layer 30 may be formed by sputtering or evaporation, which is not specifically limited herein.

[0111] Optionally, in this embodiment, the material of the transparent cathode layer 30 is not specifically limited.

[0112] In this embodiment, the first inorganic film encapsulation layer 40 is disposed on the transparent cathode layer 30 .

[0113] It should be noted that the first inorganic film encapsulation layer 40 may be formed on the transparent cathode layer 30 by chemical vapor deposition and atomic layer deposition, which is not specifically limited here.

[0114] Optionally, the material of the first inorganic film encapsulation layer 40 is a water and oxygen barrier material, for example, the material of the first inorganic film encapsulation layer 40 is a silicon oxide material, a silicon nitride material or an aluminum oxide material. Specifically, the silicon oxide material may be SiO2, the silicon nitride material may be Si3N4, and the aluminum oxide material may be Al2O3.

[0115] It should be understood that the above materials are only examples and not limitations.

[0116] In this embodiment, the quantum dot color conversion layer is disposed on the first inorganic film encapsulation layer 40. The quantum dot color conversion layer does not include a blue color conversion layer.

[0117] In a possible embodiment, the silicon-based OLED component further includes: a first planar layer 60 , wherein the first planar layer 60 is disposed between the first inorganic film encapsulation layer 40 and the quantum dot color conversion layer.

[0118] Optionally, the material of the first planar layer 60 is a low-refractive-index organic material, which is not specifically limited herein.

[0119] Optionally, the quantum dot color conversion layer includes a plurality of light shielding layers 51, a green color conversion layer 53 and a red color conversion layer 55 spaced at a preset distance;

[0120] The green color conversion layer 53 and the red color conversion layer 55 are located directly above the metal anode unit 11 , and the light shielding layer 51 is located directly above the pixel isolation layer 13 .

[0121] As an implementation mode, the light shielding layer 51 , the green color conversion layer 53 , and the red color conversion layer 55 are disposed on the first planarization layer 60 .

[0122] It should be understood that the light shielding layer 51 , the green color conversion layer 53 and the red color conversion layer 55 are located in the same layer, and the light shielding layer 51 is arranged between the green color conversion layer 53 and the red color conversion layer 55 for light shielding.

[0123] That is, the color conversion layers are sequentially arranged on the first flat layer in the order of RGB or BGR, and the blue sub-pixel is left blank because it has no color conversion layer. The light shielding layer 51 is sequentially arranged between different color conversion layers.

[0124] It can be understood that the green color conversion layer 53 is located directly above the green metal anode unit (G-Anode), and the red color conversion layer 55 is located directly above the red metal anode unit (R-Anode). Since no color conversion layer is provided directly above the blue metal anode unit (B-Anode), the blank area directly above the blue sub-pixel is between two adjacent light shielding layers 51.

[0125] Optionally, the light shielding layer 51 is a black barrier structure, which is used to shield the light excited by adjacent sub-pixels to reduce light crosstalk.

[0126] Optionally, the light shielding layer 51 is made of black light shielding material, such as black glue.

[0127] It can be understood that in this embodiment, by removing the traditional blue color green film (blue CF) in the quantum dot color conversion layer, the attenuation of blue light brightness and the loss of luminous efficiency caused by the light source passing through the color filter film are avoided, so as to improve the luminous efficiency.

[0128] In a possible embodiment, the silicon-based OLED component further includes: a second inorganic packaging film layer 70, wherein the second inorganic packaging film layer 70 is disposed on the quantum dot color conversion layer.

[0129] Optionally, the second inorganic encapsulation film layer 70 may also be deposited on the quantum dot color conversion layer by chemical vapor deposition and atomic layer deposition.

[0130] Optionally, the second inorganic film encapsulation layer 70 is made of a water and oxygen barrier material, for example, a silicon oxide material, a silicon nitride material or an aluminum oxide material. Specifically, the silicon oxide material may be SiO2, the silicon nitride material may be Si3N4, and the aluminum oxide material may be Al2O3.

[0131] It should be understood that the above materials are only examples and not limitations.

[0132] In a possible embodiment, the silicon-based OLED component further includes: a second planar layer 80 disposed on the second inorganic encapsulation film layer 70 ; and a glass cover plate 90 disposed on the second planar layer 80 .

[0133] Optionally, the second planar layer 80 and the first planar layer 60 may be made of the same material or different organic materials with low refractive index, which is not specifically limited here.

[0134] In summary, the present application provides a silicon-based OLED component and a manufacturing method thereof, which forms a plurality of metal anode units spaced a predetermined distance apart and a pixel isolation layer located between adjacent metal anode units on a substrate with a display driving circuit, then evaporates a blue phosphor layer on the substrate, and then sputters a transparent cathode layer on the blue phosphor layer; deposits a first inorganic film encapsulation layer on the transparent cathode layer; forms a quantum dot color conversion layer on the first inorganic film encapsulation layer, the quantum dot color conversion layer does not include a blue color conversion layer, thereby using a single-layer blue phosphor layer as a light-emitting layer to emit light, and compared with white light OLED, the structure is simpler, the film layer is thinner, and the light-emitting efficiency is higher; in addition, by removing the traditional blue color green light film in the quantum dot color conversion layer, the blue light brightness attenuation and light-emitting efficiency loss caused by the light source passing through the color filter film are avoided, thereby improving the light output rate and light-emitting efficiency of the silicon-based OLED component.

[0135] It should be understood that the application of the present invention is not limited to the above examples. For ordinary technicians in this field, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.

Claims

1. A method for manufacturing a silicon-based OLED component, characterized in that: include: Providing a substrate, the substrate comprising a display driving circuit; Forming a plurality of metal anode units spaced a predetermined distance apart and a pixel isolation layer between adjacent metal anode units on the substrate; A blue phosphor layer is evaporated on the substrate; wherein the blue phosphor layer covers the metal anode unit and the pixel isolation layer; sputtering a transparent cathode layer on the blue phosphor layer; depositing a first inorganic film encapsulation layer on the transparent cathode layer; A quantum dot color conversion layer is formed on the first inorganic film encapsulation layer, wherein the quantum dot color conversion layer does not include a blue color conversion layer.

2. The method for manufacturing a silicon-based OLED component according to claim 1, wherein: The step of forming a quantum dot color conversion layer on the first inorganic film encapsulation layer comprises: forming a first planarization layer on the first inorganic film encapsulation layer; A quantum dot color conversion layer is formed on the first planar layer.

3. The method for manufacturing a silicon-based OLED component according to claim 2, wherein: The quantum dot color conversion layer includes a light shielding layer, a green color conversion layer and a red color conversion layer. The quantum dot color conversion layer is formed on the first flat layer, including: forming a plurality of light shielding layers, a green color conversion layer and a red color conversion layer spaced at a preset distance on the first flat layer; The green color conversion layer and the red color conversion layer are located directly above the metal anode unit, and the light shielding layer is located directly above the pixel isolation layer.

4. The method for manufacturing a silicon-based OLED component according to any one of claims 1 to 3, characterized in that After the quantum dot color conversion layer is formed on the first inorganic film encapsulation layer, the method further includes: A second inorganic encapsulation film layer is deposited on the quantum dot color conversion layer.

5. The method for manufacturing a silicon-based OLED component according to claim 4, characterized in that: The method further comprises: forming a second planarization layer on the second inorganic encapsulation film layer; A glass cover is provided, wherein the glass cover is disposed on the second flat layer.

6. A silicon-based OLED component, characterized in that: include: A substrate, the substrate comprising a display driving circuit, a plurality of metal anode units spaced a predetermined distance apart, and a pixel isolation layer located between adjacent metal anode units; A blue phosphor layer, the blue phosphor layer covering the metal anode unit and the pixel isolation layer; A transparent cathode layer, wherein the transparent cathode layer is disposed on the blue phosphor layer; a first inorganic film encapsulation layer, wherein the first inorganic film encapsulation layer is disposed on the transparent cathode layer; A quantum dot color conversion layer is provided on the first inorganic film encapsulation layer; wherein the quantum dot color conversion layer does not include a blue color conversion layer.

7. The silicon-based OLED component according to claim 6, characterized in that: Also includes: A first flat layer is provided between the first inorganic film encapsulation layer and the quantum dot color conversion layer.

8. The silicon-based OLED component according to claim 7, characterized in that: The quantum dot color conversion layer includes a plurality of light shielding layers, a green color conversion layer and a red color conversion layer spaced at a preset distance; The green color conversion layer and the red color conversion layer are located directly above the metal anode unit, and the light shielding layer is located directly above the pixel isolation layer.

9. The silicon-based OLED component according to any one of claims 6 to 8, characterized in that: Also includes: A second inorganic packaging film layer is disposed on the quantum dot color conversion layer.

10. The silicon-based OLED component according to claim 9, characterized in that: Also includes: A second flat layer, wherein the second flat layer is disposed on the second inorganic encapsulation film layer; A glass cover plate is disposed on the second flat layer.

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